WO2021104202A1 - 一种移相器和相控阵天线 - Google Patents
一种移相器和相控阵天线 Download PDFInfo
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- WO2021104202A1 WO2021104202A1 PCT/CN2020/130871 CN2020130871W WO2021104202A1 WO 2021104202 A1 WO2021104202 A1 WO 2021104202A1 CN 2020130871 W CN2020130871 W CN 2020130871W WO 2021104202 A1 WO2021104202 A1 WO 2021104202A1
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- phase shifter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/185—Phase-shifters using a diode or a gas filled discharge tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
- H01Q3/34—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means
- H01Q3/36—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array by electrical means with variable phase-shifters
Definitions
- the present disclosure relates to the field of communication technology, and in particular to a phase shifter and a phased array antenna.
- Phase shifters can change the phase of electromagnetic wave signals and are widely used in radar, satellite communications, mobile communications and other fields.
- the phase shifter is used to control the phase of each signal in the antenna array, which can make the radiation beam perform electrical scanning. It is an important component of the phased array antenna.
- the ideal phase shifter should have less loss, and should have almost the same loss in different phase states.
- an ideal phase shifter should also meet the requirements of fast phase shifting speed and low control power required.
- a phase shifter including: a substrate, a signal transmission structure provided on the substrate, and a phase adjustment structure provided on the substrate; wherein the phase adjustment structure includes a conductive structure and at least one semiconductor Structure, a first insulating layer, and at least one first bias line; the at least one semiconductor structure is disposed between the signal transmission structure and the conductive structure; the signal transmission structure, the conductive structure, and the at least one The orthographic projection of a semiconductor structure on the substrate overlaps; the first insulating layer is disposed between the conductive structure and the at least one semiconductor structure; the orthographic projection of the first insulating layer on the substrate The projection is located at least in the overlapping area of the conductive structure and the orthographic projection of the at least one semiconductor structure on the substrate; the at least one first bias line is electrically connected to the conductive structure.
- the signal transmission structure includes a first ground electrode and a first signal line, and the first ground electrode and the first signal line are respectively disposed on opposite sides of the substrate along its thickness direction; Each semiconductor structure is electrically connected to the first signal line; each semiconductor structure overlaps the orthographic projection of the first signal line on the substrate.
- the phase shifter further includes a second bias line, and the second bias line is electrically connected to the first signal line.
- the conductive structure includes at least one first sub-conductive structure, and each first sub-conductive structure overlaps an orthographic projection of the first signal line on the substrate; the at least one The first sub-conductive structure and the at least one semiconductor structure are configured in a one-to-one correspondence.
- the first signal line includes a main structure and at least one branch structure; the at least one branch structure is electrically connected to the main structure, and the extension direction of the orthographic projection of each branch structure on the substrate Intersect with the extension direction of the orthographic projection of the main structure on the substrate; the at least one branch structure and the at least one first conductive substructure are configured in a one-to-one correspondence, and each branch structure corresponds to the first The orthographic projection of a sub-conductive structure on the substrate overlaps.
- the conductive structure further includes at least one second sub-conductive structure; the at least one second sub-conductive structure has no overlap with the orthographic projection of the first signal line on the substrate; each The second conductive substructure is electrically connected to at least one first conductive substructure.
- the at least one first sub-conductive structure includes a plurality of first sub-conductive structures; the at least one second sub-conductive structure includes a plurality of second sub-conductive structures, and each second sub-conductive structure is connected to At least one first sub-conductive structure of the plurality of first sub-conductive structures is electrically connected, and different second sub-conductive structures are electrically connected to different first sub-conductive structures.
- the number of first conductive substructures electrically connected to different second conductive substructures is not completely the same.
- the at least one first bias line and the at least one second sub-conductive structure are configured in a one-to-one correspondence, and each first bias line is electrically connected to the corresponding second sub-conductive structure .
- the first signal line includes a plurality of signal line segment structures arranged at intervals, the orthographic projections of the plurality of signal line segments on the substrate do not overlap, and the plurality of signal lines The orthographic projections of the segments on the plane perpendicular to the extension direction of the first signal line all overlap; the end of each signal line segment structure opposite to the adjacent signal line segment structure is configured to be electrically conductive with one first sub Structure correspondence.
- the conductive structure further includes at least one third sub-conductive structure; there is no overlap between the at least one third sub-conductive structure and the orthographic projection of the plurality of signal line segment structures on the substrate ; Each third sub-conductive structure is electrically connected to two adjacent first sub-conductive structures.
- the phase shifter further includes a plurality of third bias lines; the plurality of third bias lines and the plurality of signal line segment structures are configured in a one-to-one correspondence, and each of the third bias lines
- the three-bias voltage line is electrically connected to a corresponding signal line segment structure; the at least one first bias line and the at least one third sub-conductive structure are configured in a one-to-one correspondence, and each first bias line is The corresponding third sub-conductive structure is electrically connected.
- the signal transmission structure includes a second signal line, and a second ground electrode and a third ground electrode disposed on opposite sides of the second signal line along its width direction; the second signal line Wire, the second ground electrode, and the third ground electrode are located on the same side of the substrate; each semiconductor structure is electrically connected to the second signal line; the semiconductor structure is connected to the second signal line.
- the conductive structure includes at least one fourth sub-conductive structure, and each fourth sub-conductive structure overlaps an orthographic projection of the second signal line on the substrate; wherein, the The at least one fourth sub-conductive structure and the at least one semiconductor structure are configured in a one-to-one correspondence.
- the phase shifter further includes a fourth bias line, and the fourth bias line is electrically connected to the second signal line.
- the at least one first bias line and the at least one fourth sub-conductive structure are configured in a one-to-one correspondence, and each first bias line is electrically connected to the corresponding fourth sub-conductive structure .
- each fourth sub-conductive structure is electrically connected to the second ground electrode and the third ground electrode; the first bias line is configured to be connected to the second ground electrode or the third ground electrode.
- the third ground electrode is electrically connected.
- the second ground electrode and the third ground electrode are disposed on a surface of the first insulating layer away from the second signal line; the second signal line is disposed on the Between the first insulating layer and the substrate.
- the semiconductor unit is a PIN junction or a PN junction.
- phased array antenna which includes the phase shifter described in any of the above embodiments.
- FIG. 1A is a plan structure diagram of a phase shifter according to some embodiments of the present disclosure.
- FIG. 1B is a plan structure diagram of another phase shifter according to some embodiments of the present disclosure.
- Figure 2A shows a partial cross-sectional structural view taken along the line AA' in Figure 1A;
- FIG. 2B shows another partial cross-sectional structural view taken along the line AA' in FIG. 1A;
- FIG. 3 is a plan structure diagram of yet another phase shifter according to some embodiments of the present disclosure.
- Figure 4 shows a partial cross-sectional structure view taken along the line BB' in Figure 3;
- Fig. 5 is a plan structure diagram of yet another phase shifter according to some embodiments of the present disclosure.
- Figure 6 shows a partial cross-sectional structure view taken along the line CC' in Figure 5;
- Fig. 7 is a plan structure diagram of yet another phase shifter according to some embodiments of the present disclosure.
- FIG. 8 shows a partial cross-sectional structure diagram taken along the line DD' in FIG. 7.
- first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, “plurality” means two or more.
- connection may be used when describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other.
- the term “connected” may also mean that two or more components are not in direct contact with each other, but still cooperate or interact with each other.
- the embodiments disclosed herein are not necessarily limited to the content of this document.
- Figures 1A, 1B, and Figures 2A, 2B show the structure of a phase shifter according to some embodiments of the present disclosure, wherein Figure 1A is a schematic diagram of a plane structure of a phase shifter, and Figure 1B is another type of shifter. 2A is a partial cross-sectional view of AA' of the phase shifter in FIG. 1A, and FIG. 2B is another partial cross-sectional view of AA' of the phase shifter in FIG. 1A.
- the phase shifter includes a substrate 101, a signal transmission structure 102 disposed on the substrate 101, and a phase adjustment structure.
- the phase adjustment structure includes a conductive structure 103, at least one semiconductor structure 104, a first insulating layer 105 and at least one first bias line 106.
- At least one semiconductor structure 104 is disposed between the signal transmission structure 102 and the conductive structure 103, and the orthographic projections of the signal transmission structure 102, the conductive structure 103, and the at least one semiconductor structure 104 on the substrate 101 overlap.
- the first insulating layer 105 is disposed between the conductive structure 103 and the at least one semiconductor structure 104, and the orthographic projection of the first insulating layer 105 on the substrate 101 is at least the orthographic projection of the conductive structure 103 and the at least one semiconductor structure 104 on the substrate 101 In the overlapping area.
- At least one first bias line 106 is electrically connected to the conductive structure 103, and the at least one first bias line 106 is configured to provide a required voltage signal to the conductive structure 103.
- Each semiconductor structure 104 is configured to adjust the phase of a signal (for example, a microwave signal) transmitted by the signal transmission structure 102 according to the voltage applied by the signal transmission structure 102 and the conductive structure 103.
- the semiconductor structure 104 and the signal transmission structure 102 are directly electrically connected. That is, the semiconductor structure 104 is provided on the surface of the signal transmission structure 102. In other embodiments, the semiconductor structure 104 is electrically connected to the signal transmission structure 102 through via holes.
- the at least one semiconductor structure 104 includes a plurality of semiconductor structures 104, and the orthographic projections of the plurality of semiconductor structures 104 on the substrate 101 do not overlap each other.
- the signal transmission structure 102, the conductive structure 103, and the orthographic projection of each semiconductor structure 104 on the substrate 10 have overlapping regions.
- the first insulating layer 105 includes a plurality of parts, and each part is disposed between the conductive structure and a semiconductor structure 104.
- each semiconductor structure 104 the signal transmission structure 102, the semiconductor structure 104, the conductive structure 103, and the portion of the first insulating layer 105 located between the conductive structure 103 and the semiconductor structure 104 form one based on the semiconductor structure 104 Equivalent capacitor.
- the capacitance value of the equivalent capacitor By changing the capacitance value of the equivalent capacitor, the phase velocity of the microwave signal transmitted to the signal transmission structure 102 can be changed. Since the capacitance value of the equivalent capacitor is related to the length of the depletion region inside the semiconductor structure 104, and the length of the depletion region is related to the charge distribution inside the semiconductor structure 104, the equivalent capacitor can be adjusted by adjusting the charge distribution inside the semiconductor structure 104. The capacitance value of the capacitor.
- the length of the depletion region in the semiconductor structure 104 can be changed according to the voltage applied by the signal transmission structure 102 and the conductive structure 103.
- the capacitance value of the above-mentioned equivalent capacitor changes, so that the phase velocity of the microwave signal transmitted by the signal transmission structure 102 can be changed, and thus the phase of the microwave signal can be changed.
- the voltage applied by the signal transmission structure 102 and the conductive structure 103 is changed, only the length of the depletion region changed by the redistribution of the charge inside the semiconductor structure 104 is involved, and the response speed can reach the order of microseconds.
- the phase shifter of the present disclosure has a fast response speed and a large degree of phase shift.
- the capacitor of the equivalent capacitor can be It can be adjusted, and the present disclosure does not limit the specific structure type of the semiconductor structure 104.
- the semiconductor structure 104 may include a PIN junction.
- the semiconductor structure 104 includes a P-type semiconductor layer, an N-type semiconductor layer, and an intrinsic semiconductor layer located between the P-type semiconductor layer and the N-type semiconductor layer stacked along the thickness direction of the substrate 101.
- the semiconductor structure 104 may include a PN junction.
- the semiconductor structure 104 includes a P-type semiconductor layer and an N-type semiconductor layer stacked along the thickness direction of the substrate 101.
- the semiconductor structure 104 including a PIN junction or a PN junction
- the bias signal loaded by the P-type semiconductor layer is lower than the bias signal loaded by the N-type semiconductor layer
- change the difference between the two bias signals Then the capacitance value adjustment of the above-mentioned equivalent capacitor can be realized.
- the adjustment speed of the capacitance value of the equivalent capacitor is faster, and the phase adjustment speed of the microwave signal transmitted by the signal transmission unit structure 102 is improved. Therefore, the response speed of the phase shifter of the embodiment of the present disclosure is fast.
- the material of the first insulating layer 105 may be any suitable insulating material.
- the material of the first insulating layer 105 includes at least one of silicon oxide, silicon nitride, or silicon oxynitride.
- the material of the first bias line 106 includes a conductive material.
- the material of the first bias line 106 includes metal materials such as copper, silver, aluminum, gold, and iron.
- the material of the first bias line 106 includes conductive compound materials such as ITO (Indium tin oxide) and IZO (Indium zinc oxide).
- the signal transmission structure 102 includes a first ground electrode 1022 and a first signal line 1021.
- the first ground electrode 1022 and the first signal line 1021 are respectively disposed along the substrate 101. The opposite sides of the thickness direction.
- the first ground electrode 1022 is disposed on the lower surface of the substrate 101
- the first signal line 1021 is disposed on the side of the substrate 101 away from the first ground electrode 1022.
- Each semiconductor structure 104 is electrically connected to the first signal line 1021 (for example, each semiconductor structure 104 is directly electrically connected to the first signal line 1021), and the orthographic projection of each semiconductor structure 104 on the substrate 101 and the first signal line 1021 The orthographic projections of a signal line 1021 on the substrate 101 all overlap. Based on this, the first signal line 1021, each semiconductor structure 104, the conductive structure 103, and the portion of the first insulating layer 105 located between the semiconductor structure 104 and the conductive structure 103 form the aforementioned equivalent capacitor.
- the first ground electrode 1022 and the first signal line 1021 may be formed on different sides of the substrate 101 through processes such as sputtering and etching.
- the materials of the first ground electrode 1022 and the first signal line 1021 may include metal materials such as copper, silver, aluminum, gold, and iron.
- the materials of the first ground electrode 1022 and the first signal line 1021 may be the same or different.
- the conductive structure 103 includes at least one first sub-conductive structure 1031, and the orthographic projection of each first sub-conductive structure 1031 on the substrate 101 and the first The orthographic projections of the signal lines 1021 on the substrate 101 all overlap.
- the at least one first conductive substructure 1031 and the at least one semiconductor structure 104 are configured in a one-to-one correspondence.
- the at least one first conductive substructure 1031 includes a plurality of first conductive substructures 1031, and the orthographic projections of the plurality of first conductive substructures 1031 on the substrate 101 do not overlap each other.
- each first conductive substructure 1031 and its corresponding semiconductor structure 104, the portion of the first insulating layer 105 between the first conductive substructure 1031 and the corresponding semiconductor structure 104, and the first signal line 1021 constitute An equivalent capacitor, that is, the number of equivalent capacitors included in the phase shifter is the same as the number of semiconductor structures 104.
- the shape of the first conductive sub-structure 1031 can be set according to actual needs, which is not limited in the embodiment of the present disclosure.
- the shapes of the plurality of first conductive substructures 1031 are the same, that is, the shapes of any two of the first conductive substructures 1031 are the same.
- the shapes of the plurality of first conductive substructures 1031 are different. For example, among the plurality of first conductive substructures 1031, any two first conductive substructures 1031 have different shapes.
- the plurality of first conductive substructures 1031 includes at least three first conductive substructures 1031, wherein at least two of the first conductive substructures 1031 have the same shape, and the at least two first conductive substructures 1031 and The shapes of the remaining first conductive substructures 1031 are different.
- the distance between two adjacent first sub-conductive structures 1031 can be set according to actual needs, which is not limited in the embodiment of the present disclosure. In some examples, the distance between any two adjacent first sub-conductive structures 1031 among the plurality of first sub-conductive structures 1031 is the same. In other examples, the distance between any two adjacent first sub-conductive structures 1031 among the plurality of first sub-conductive structures 1031 is different.
- the length of the gap refers to the distance between two adjacent first sub-conductive structures 1031.
- the material of the first sub-conductive structure 1031 may include metal materials such as copper, silver, aluminum, gold, iron, and the like.
- the capacitance value of the equivalent capacitor can be expressed as:
- C 1 is the capacitance value of the equivalent capacitor
- d is the equivalent distance of the equivalent capacitor
- ⁇ r is the relative dielectric constant
- ⁇ 0 is the vacuum dielectric constant
- S is the equivalent area of the equivalent capacitor.
- the equivalent distance is related to the thickness of the semiconductor structure 104 and the thickness of the first insulating layer 105.
- the charge distribution in the semiconductor structure 104 is not uniform, so the equivalent distance may be slightly smaller than the sum of the thickness of the semiconductor structure 104 and the first insulating layer 105.
- the equivalent area is the area of the overlapping area of the orthographic projection of the first conductive sub-structure 1031 on the substrate 101 and the orthographic projection of the first signal line 1021 on the substrate 101. It can be seen from the above formula that the capacitance value of the equivalent capacitor is directly proportional to the relative dielectric constant and inversely proportional to the equivalent distance.
- the relative dielectric constant of the equivalent capacitor formed is generally 2.58 to 3.6, and the thickness of the liquid crystal cell (ie, the equivalent distance of the equivalent capacitor) is greater than 5 microns .
- the relative dielectric constant of the equivalent capacitor may be 10-20, and the equivalent distance of the equivalent capacitor About 0.1 to 2 microns. Therefore, without applying a bias voltage, the equivalent capacitance value of the equivalent capacitor in the phase shifter according to some embodiments of the present disclosure is at least 10 times the equivalent capacitance value of the liquid crystal phase shifter.
- the phase shifter provided according to some embodiments of the present disclosure can obtain a wider adjustment range of the equivalent capacitance.
- the phase shifter according to the embodiment of the present disclosure adjusts the capacitance value of the equivalent capacitor by adjusting the distribution of the charge in the semiconductor structure 104, the response speed of the phase shifter according to the embodiment of the present disclosure is faster than that of the liquid crystal phase shifter. The response speed of the device is fast.
- the first signal line 1021 includes a main structure 10211 and at least one branch structure 10212.
- the at least one branch structure 10212 is electrically connected to the main structure 10211, and the extension direction of the orthographic projection of each branch structure 10212 on the substrate 101 intersects the extension direction of the orthographic projection of the main structure 10211 on the substrate 101.
- at least one branch structure 10212 and at least one first sub-conductive structure 1031 are configured in a one-to-one correspondence, and the orthographic projection of each branch structure 10212 on the substrate 101 corresponds to the first sub-conductive structure 1031 on the substrate 101. The orthographic projections on there overlap.
- the at least one branch structure 10212 includes a plurality of branch structures 10212, and the orthographic projections of the plurality of branch structures 10212 on the substrate 101 do not overlap each other.
- each first conductive substructure 1031 and its corresponding semiconductor structure 104, the branch structure 10212 corresponding to the first conductive substructure 1031, and the first insulating layer 105 are located in the first conductive substructure 1031 and its corresponding semiconductor structure 104 The part in between constitutes an equivalent capacitance.
- the shape of the branch structure 10212 can be set according to actual needs, which is not limited in the embodiment of the present disclosure.
- the shapes of the multiple branch structures 10212 are the same, that is, the shapes of any two branch structures 10212 are the same.
- the shapes of the plurality of branch structures 10212 are different.
- the plurality of branch structures 10212 includes at least three branch structures 10212, wherein the shapes of at least two branch structures 10212 are the same, and the shapes of the at least two branch structures 10212 and the remaining branch structures 10212 are different.
- the distance between two adjacent branch structures 10212 can be set according to actual needs, which is not limited in the embodiment of the present disclosure. In some examples, the distance between any two adjacent branch structures 10212 in the plurality of branch structures 10212 is the same. In other examples, the distance between any two adjacent branch structures 10212 in the plurality of branch structures 10212 is different.
- the length of the gap refers to the distance between two adjacent branch structures 10212.
- the conductive structure 103 further includes at least one second sub-conductive structure 1032.
- Each second conductive substructure 1032 is electrically connected to at least one first conductive substructure 1031.
- the orthographic projection of the at least one second conductive substructure 1032 on the substrate 101 and the orthographic projection of the first signal line 1021 on the substrate 101 do not overlap.
- the conductive structure 103 includes a plurality of first sub-conductive structures 1031 and a second sub-conductive structure 1032, and the plurality of first sub-conductive structures 1031 are all connected to the second sub-conductive structure. 1032 electrical connection.
- the conductive structure 103 includes a plurality of first sub-conductive structures 1031 and a plurality of second sub-conductive structures 1032, each of the second sub-conductive structures 1032 and the plurality of first sub-structures At least one first sub-conductive structure 1031 in the conductive structure 1031 is electrically connected, and the first sub-conductive structure 1031 connected to the different second sub-conductive structure 1032 is different.
- the number of first conductive substructures 1031 electrically connected to different second conductive substructures 1032 is not completely the same. For example, along the extension direction of the main structure 10211, the number of the first conductive substructures 1031 connected to each second conductive substructure 1032 gradually increases or decreases. In other examples, the number of first conductive substructures 1031 connected to each second conductive substructure 1032 is equal.
- the material of the second sub-conductive structure 1032 may include metal materials such as copper, silver, aluminum, gold, iron, etc., which are not limited in the embodiment of the present disclosure.
- the materials of the first conductive substructure 1031 and the second conductive substructure 1032 are the same to simplify the manufacturing process.
- At least one first bias line 106 and at least one second sub-conductive structure 1032 are configured in a one-to-one correspondence, and each first bias line 106 is configured to correspond to a corresponding second sub-conductive structure 1032. Electric connection.
- the phase shifter further includes a second bias line 107.
- the second bias line 107 is configured to be electrically connected with the first signal line 1021.
- the material of the second bias line 107 may include metal materials such as copper, silver, aluminum, gold, and iron, or conductive compound materials such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), etc. This is not the case in the embodiments of the present disclosure. Make a limit.
- the potential difference between the two sides of the semiconductor structure 104 can be controlled, thereby changing the semiconductor structure 104
- the charge distribution changes the capacitance value of the equivalent capacitor.
- each second sub-conductive structure 1032 adjusts a phase shift correspondingly.
- N the number of second conductive substructures 1032
- 2N phase shifts can be obtained, so the bias signal loaded by the corresponding second conductive substructure 1032 can be controlled according to the magnitude of the phase shift to be adjusted, without The bias signal is applied to all the second conductive substructures 1032, so that the phase shifter in this embodiment is convenient to control and has low power consumption.
- the phase shifter further includes a second insulating layer 108 disposed on the side of the conductive structure 103 away from the substrate 101.
- the first bias line 106 may be electrically connected to the second sub-conductive structure 1032 through a via hole penetrating the second insulating layer 108.
- the second bias line 107 may be electrically connected to the first signal line 1021 through a via hole penetrating the first insulating layer 105 and the second insulating layer 108.
- the second insulating layer 108 can prevent the oxidation of the first conductive substructure 1031 and the second conductive substructure 1032, and avoid the phase shifter from being caused by metal materials. Loss caused by oxidation.
- the material of the second insulating layer 108 may be any suitable electrical insulating material.
- the material of the second insulating layer 108 may include at least one of silicon oxide, silicon nitride, or silicon oxynitride.
- Figures 3 and 4 show the structure of a phase shifter according to some embodiments of the present disclosure, in which Figure 3 is a schematic diagram of a plan structure of the phase shifter, and Figure 4 is a diagram of the phase shifter along the line in Figure 3 A partial cross-sectional view of BB'.
- the first signal line 1021 includes a plurality of signal line segment structures 10213 arranged at intervals, and the orthographic projection of the plurality of signal line segment structures 10213 on the substrate 101 does not exist. Overlap, and the orthographic projections of the plurality of signal line segment structures 10213 on a plane perpendicular to the extension direction of the first signal line 1021 all overlap. The end of each signal line segment structure 10213 opposite to the adjacent signal line segment structure 10213 is configured to correspond to one first sub-conductive structure 1031.
- the conductive structure 103 may further include at least one third sub-conductive structure 1033, and the orthographic projection of the at least one third sub-conductive structure 1033 on the substrate 101 and the The orthographic projections of the multiple signal line segment structures 10213 on the substrate 101 do not overlap.
- Each third conductive substructure 1033 is configured to be electrically connected to two adjacent first conductive substructures 1031.
- each third conductive substructure 1033 is electrically connected to two adjacent first conductive substructures 1031 into one body.
- each first conductive substructure 1031 and the corresponding semiconductor structure 104, one end of the signal line segment structure 10213 corresponding to the first conductive substructure 1031, and the first insulating layer 105 are located in the first conductive substructure 1031 and the corresponding semiconductor structure 104.
- the portion between the corresponding semiconductor structures 104 constitutes an equivalent capacitance.
- the material of the third sub-conductive structure 1033 may include metals such as copper, silver, aluminum, gold, iron, etc., which are not limited in the embodiments of the present disclosure.
- the first sub-conductive structure 1031 and the third sub-conductive structure 1033 are made of the same material, and are fabricated by using the same layer and the same process to reduce the process difficulty.
- the phase shifter may further include a plurality of third bias lines 110.
- the plurality of third bias lines 110 and the plurality of signal line segment structures 10213 are configured in a one-to-one correspondence, and each third bias line 110 is electrically connected to a corresponding signal line segment structure 10213.
- the at least one first bias line 106 and the at least one third sub-conductive structure 1033 are configured in a one-to-one correspondence, and each first bias line 106 and The corresponding third sub-conductive structure 1033 is electrically connected.
- different third conductive substructures 1033 can load different bias signals to the first conductive substructure 1031 electrically connected to them through different first bias lines 106.
- different signal line segment structures 10213 can be loaded with different bias signals through different third bias lines 110, so that different equivalent capacitors can be controlled separately, so that the microwave signal can be shifted after passing through different equivalent capacitors.
- the phasors are different. Therefore, the bias signal loaded by the corresponding equivalent capacitor can be controlled according to the magnitude of the phase shift to be adjusted, that is, it is not necessary to load the bias signal to all the third sub-conductive structures 1033, and it is not necessary to apply the bias signal to all the signal line segment structures.
- the 10213 loads the bias signal, so that the phase shifter in the embodiment of the present disclosure is further convenient to control, and the power consumption is further reduced.
- the material of the third bias line 110 may include metal materials such as copper, silver, aluminum, gold, iron, or conductive compound materials such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), etc. Not limited.
- the phase shifter further includes a flat layer 109 disposed between the substrate 101 and the first signal line 1021.
- the signal line segment structure 10213 is disposed on a side of the planar layer 109 away from the substrate 101.
- the first bias line 106 and the third bias line 110 are disposed between the substrate 101 and the flat layer 109, and the signal line segment structure 10213 is electrically connected to the third bias line 110 through a via hole penetrating the flat layer 109. connection.
- the third sub-conductive structure 1033 is electrically connected to the first bias line 106 through a via hole penetrating the flat layer 109 and the first insulating layer 105.
- the step difference caused by the first bias line 106 and the third bias line 110 can be reduced, the risk of breakage during film formation of other structures caused by the high step difference can be reduced, and the phase shifter can be improved.
- the yield rate By providing the flat layer 109, the step difference caused by the first bias line 106 and the third bias line 110 can be reduced, the risk of breakage during film formation of other structures caused by the high step difference can be reduced, and the phase shifter can be improved.
- the yield rate is the yield rate.
- the material of the flat layer 109 may include inorganic materials such as silicon oxide, silicon nitride, aluminum oxide, or silicon oxynitride, which is not limited in the embodiments of the present disclosure.
- the orthographic projection of the first bias line 106 on the substrate 101 and the orthographic projection of the third bias line 110 on the substrate 101 do not overlap.
- FIG. 5 and 6 show the structure of a phase shifter according to some embodiments of the present disclosure, wherein FIG. 5 is a schematic diagram of a plan structure of the phase shifter, and FIG. 6 is a schematic diagram of the phase shifter along the line in FIG. 5.
- a partial cross-sectional view of CC' in. 7 and 8 show the structure of another phase shifter according to some embodiments of the present disclosure, wherein FIG. 7 is a schematic diagram of a plan structure of the phase shifter, and FIG. 8 is a diagram along the line of the phase shifter.
- the signal transmission structure 102 includes a second signal line 1023, and a second ground electrode 1024 and a third ground electrode 1025 disposed on opposite sides of the second signal line 1023 along its width direction.
- the second signal line 1023, the second ground electrode 1024, and the third ground electrode 1025 are located on the same side of the substrate 101.
- Each semiconductor structure 104 is electrically connected to the second signal line 1023.
- the orthographic projection of each semiconductor structure 104 on the substrate 101 overlaps the orthographic projection of the second signal line 1023 on the substrate 101, and the orthographic projection of each semiconductor structure 104 on the substrate 101 overlaps with the second ground electrode 1024 and the second ground electrode 1024. There is no overlap in the orthographic projections of the third ground electrode 1025 on the substrate 101.
- the second ground electrode 1024 and the third ground electrode 1025 are disposed on the surface of the first insulating layer 105 away from the second signal line 1023, and the second signal line 1023 is disposed on Between the first insulating layer 105 and the substrate 101.
- the semiconductor structure 104 is disposed on the surface of the second signal line 1023 close to the first insulating layer 105.
- the material of the second signal line 1023, the second ground electrode 1024, and the third ground electrode 1025 may include metal materials such as copper, silver, aluminum, gold, and iron.
- the second signal line 1023, the second ground electrode 1024, and the third ground electrode 1025 may use the same metal material.
- the conductive structure 103 includes at least one fourth sub-conductive structure 1034.
- at least one fourth sub-conductive structure 1034 and at least one semiconductor structure 104 are configured in a one-to-one correspondence.
- at least one fourth conductive substructure 1034 includes a plurality of fourth conductive substructures 1034
- at least one semiconductor structure 104 includes a plurality of semiconductor structures 104.
- each fourth sub-conductive structure 1034 and the correspondingly configured semiconductor structure 104, the portion of the first insulating layer 105 between the fourth sub-conductive structure 1034 and the correspondingly configured semiconductor structure 104, and the second signal line 1023 Form an equivalent capacitor.
- the number of equivalent capacitors included in the phase shifter is the same as the number of semiconductor structures 104.
- the shape of the fourth sub-conductive structure 1034 can be set according to actual needs, which is not limited in the embodiment of the present disclosure.
- the shapes of the plurality of fourth conductive substructures 1034 are the same, that is, any two of the fourth conductive substructures 1034 have the same shape.
- the shapes of the fourth conductive substructures 1034 are different.
- any two fourth conductive substructures 1034 have different shapes.
- the plurality of fourth conductive substructures 1034 includes at least three fourth conductive substructures 1034, wherein at least two of the fourth conductive substructures 1034 have the same shape, and the at least two fourth conductive substructures 1034 and The shapes of the remaining fourth sub-conductive structures 1034 are different.
- the distance between two adjacent fourth sub-conductive structures 1034 can be set according to actual needs, which is not limited in the embodiment of the present disclosure. In some embodiments, the distance between any two adjacent fourth sub-conductive structures 1034 among the plurality of fourth sub-conductive structures 1034 is the same. In other embodiments, the distance between any two adjacent fourth sub-conductive structures 1034 among the plurality of fourth sub-conductive structures 1034 is different.
- the length of the gap refers to the distance between two adjacent fourth conductive substructures 1034.
- the material of the fourth sub-conductive structure 1034 may include metals such as copper, silver, aluminum, gold, iron, etc., which are not limited in the embodiments of the present disclosure.
- the at least one first bias line 106 is configured to correspond to the at least one fourth sub-conductive structure 1034 one-to-one, and each first bias line 106 The line 106 is electrically connected to the corresponding fourth sub-conductive structure 1034.
- at least one first bias line 106 includes a plurality of first bias lines 106
- at least one fourth sub-conductive structure 1034 includes a plurality of fourth sub-conductive structures 1034.
- each fourth conductive substructure 1034 can be loaded with a different bias signal, so that different equivalent capacitors can be controlled separately, so that the microwave signal passes through different levels.
- the amount of phase shift after the effect capacitor is different. Therefore, the bias signal loaded by the corresponding equivalent capacitor can be controlled according to the magnitude of the phase shift to be adjusted, and there is no need to load the bias signal on all the fourth sub-conductive structures 1034, so that the phase shifter in this embodiment is Convenient to control, and low power consumption.
- the phase shifter further includes a third insulating layer 112, the third insulating layer 112 is disposed between the second ground electrode 1024 and the fourth sub-conductive structure 1034, and the third ground electrode 1025 and Between the fourth sub-conductive structures 1034.
- insulation is maintained between each fourth sub-conductive structure 1034 and the second ground electrode 1024, and between each fourth sub-conductive structure 1034 and the third ground electrode 1025.
- first bias line 106 and the fourth sub-conductive structure 1034 are disposed on the same side of the third insulating layer 112.
- each first bias line 106 is electrically connected to the corresponding fourth sub-conductive structure 1034 as a whole.
- each fourth sub-conductive structure 1034 is configured to be electrically connected to the second ground electrode 1024 and the third ground electrode 1025.
- the first bias line 106 is configured to be electrically connected to the fourth sub-conductive structure 1034 in the conductive structure 103 through the second ground electrode 1024 or the third ground electrode 1025.
- the phase shifter further includes a fourth bias line 111, and the fourth bias line 111 is configured to be electrically connected to the second signal line 1023.
- the material of the fourth bias line 111 may include metal materials such as copper, silver, aluminum, gold, iron, or conductive compound materials such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), etc. This is not the case in the embodiments of the present disclosure. Make a limit.
- some embodiments of the present disclosure further provide a phased array antenna, which includes the phase shifter of any of the foregoing embodiments of the present disclosure.
- a phased array antenna which includes the phase shifter of any of the foregoing embodiments of the present disclosure.
- the phase shifter please refer to the corresponding description in the above embodiment, which will not be repeated here. It should be noted that the number of phase shifters included in the phased array antenna is determined according to actual requirements, and the embodiment of the present disclosure does not specifically limit it.
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Claims (20)
- 一种移相器,包括:基底;设置于所述基底上的信号传输结构;设置于所述基底上的相位调整结构;其中,所述相位调整结构包括:导电结构;至少一个半导体结构,设置于所述信号传输结构与所述导电结构之间;所述信号传输结构、所述导电结构以及所述至少一个半导体结构在所述基底上的正投影存在交叠;第一绝缘层,设置于所述导电结构与所述至少一个半导体结构之间;所述第一绝缘层在所述基底上的正投影至少位于所述导电结构与所述至少一个半导体结构在所述基底上的正投影的交叠区域中;以及至少一条第一偏压线,与所述导电结构电连接。
- 根据权利要求1所述的移相器,其中,所述信号传输结构包括第一地电极和第一信号线,所述第一地电极和所述第一信号线分别设置于所述基底沿其厚度方向的相对两侧;其中,每个半导体结构均与所述第一信号线电连接;每个半导体结构与所述第一信号线在所述基底上的正投影均存在交叠。
- 根据权利要求2所述的移相器,还包括:第二偏压线,所述第二偏压线与所述第一信号线电连接。
- 根据权利要求2所述的移相器,其中,所述导电结构包括至少一个第一子导电结构,每个第一子导电结构与所述第一信号线在所述基底上的正投影均存在交叠;所述至少一个第一子导电结构与所述至少一个半导体结构被配置为一一对应。
- 根据权利要求4所述的移相器,其中,所述第一信号线包括主体结构和至少一个分支结构;所述至少一个分支结构与所述主体结构电连接,每个分支结构在所述基底上的正投影的延伸方向与所述主体结构在所述基底上的正投影的延伸方向相交;所述至少一个分支结构与所述至少一个第一子导电结构被配置为一一对应,且每个分支结构与对应的第一子导电结构在所述基底上的正投影存在交叠。
- 根据权利要求5所述的移相器,其中,所述导电结构还包括至少一个第二子导电结构;所述至少一个第二子导电结构与所述第一信号线在所述基底上的正投影无交叠;每个第二子导电结构与至少一个第一子导电结构电连接。
- 根据权利要求6所述的移相器,其中,所述至少一个第一子导电结构包括多个第一子导电结构;所述至少一个第二子导电结构包括多个第二子导电结构,每个第二子导电结构与所述多个第一子导电结构中的至少一个第一子导电结构电连接,且不同的第二子导电结构电连接的第一子导电结构不同。
- 根据权利要求7所述的移相器,其中,不同的第二子导电结构电连接的第一子导电结构的数量不完全相同。
- 根据权利要求6-8任一项所述的移相器,其中,所述至少一条第一偏压线与所述至少一个第二子导电结构被配置为一一对应,且每条第一偏压线与对应的第二子导电结构电连接。
- 根据权利要求4所述的移相器,其中,所述第一信号线包括间隔设置的多个信号线片段结构,所述多个信号线片段在所述基底上的正投影不存在交叠,且所述多个信号线片段在垂直于所述第一信号线的延伸方向的平面上的正投影均存在交叠;每个信号线片段结构与相邻信号线片段结构相对的一端均被配置为与一个第一子导电结构对应。
- 根据权利要求10所述的移相器,其中,所述导电结构还包括至少一个第三子导电结构;所述至少一个第三子导电结构与所述多个信号线片段结构在所述基底上的正投影不存在交叠;每个第三子导电结构与相邻的两个第一子导电结构电连接。
- 根据权利要求11所述的移相器,还包括:多条第三偏压线;其中,所述多条第三偏压线与所述多个信号线片段结构被配置为一一对应,且每条第三偏压线与对应的一个信号线片段结构电连接;所述至少一条第一偏压线与所述至少一个第三子导电结构被配置为一一对应,且每条第一偏压线与对应的第三子导电结构电连接。
- 根据权利要求1所述的移相器,其中,所述信号传输结构包括 第二信号线,以及设置于所述第二信号线沿其宽度方向的相对两侧的第二地电极和第三地电极;所述第二信号线、所述第二地电极和所述第三地电极位于所述基底的同一侧;每个半导体结构均与所述第二信号线电连接;所述半导体结构与所述第二信号线在所述基底上的正投影存在交叠,且所述半导体结构与所述第二地电极及所述第三地电极在所述基底上的正投影均不存在交叠。
- 根据权利要求13所述的移相器,所述导电结构包括至少一个第四子导电结构,每个第四子导电结构与所述第二信号线在所述基底上的正投影均存在交叠;其中,所述至少一个第四子导电结构与所述至少一个半导体结构被配置为一一对应。
- 根据权利要求14所述的移相器,还包括:第四偏压线,所述第四偏压线与所述第二信号线电连接。
- 根据权利要求14所述的移相器,所述至少一条第一偏压线与所述至少一个第四子导电结构被配置为一一对应,且每条第一偏压线与对应的第四子导电结构电连接。
- 根据权利要求14所述的移相器,其中,每个第四子导电结构均与所述第二地电极和所述第三地电极电连接;所述第一偏压线被配置为与所述第二地电极或所述第三地电极电连接。
- 根据权利要求13所述的移相器,其中,所述第二地电极和所述第三地电极设置于所述第一绝缘层的远离所述第二信号线的一侧表面上;所述第二信号线设置于所述第一绝缘层与所述基底之间。
- 根据权利要求1-18任一项所述的移相器,所述半导体单元为PIN结或PN结。
- 一种相控阵天线,包括权利要求1-19任一项所述的移相器。
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US11870123B2 (en) * | 2021-01-28 | 2024-01-09 | Boe Technology Group Co., Ltd. | Phase shifter and antenna |
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