WO2021103579A1 - 一种具有gs分层式电极的薄膜材料声表面波器件及其制备方法与应用 - Google Patents

一种具有gs分层式电极的薄膜材料声表面波器件及其制备方法与应用 Download PDF

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WO2021103579A1
WO2021103579A1 PCT/CN2020/102273 CN2020102273W WO2021103579A1 WO 2021103579 A1 WO2021103579 A1 WO 2021103579A1 CN 2020102273 W CN2020102273 W CN 2020102273W WO 2021103579 A1 WO2021103579 A1 WO 2021103579A1
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layer
interdigital transducer
acoustic wave
surface acoustic
wave device
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PCT/CN2020/102273
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English (en)
French (fr)
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潘峰
沈君尧
曾飞
傅肃磊
苏荣宣
王为标
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清华大学
无锡市好达电子有限公司
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Publication of WO2021103579A1 publication Critical patent/WO2021103579A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves

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  • the invention relates to the field of electronic information materials, in particular to a surface acoustic wave device and a preparation method and application thereof, and in particular to a thin-film material surface acoustic wave device with GS layered electrodes, and a preparation method and application thereof.
  • Surface acoustic waves are mechanical waves generated and propagated on the surface of piezoelectric materials. Due to its high sensitivity, small size, and low cost, surface acoustic waves have been widely used in electronic devices such as resonators, filters, sensors, and convolutions. Especially in the field of mobile communications, surface acoustic wave filters play a vital role.
  • the performance of the RF filter is very important.
  • Surface acoustic wave filters and bulk acoustic wave filters are currently the two most mainstream radio frequency filters.
  • Surface acoustic wave filters are simple to prepare, but they are difficult to apply to high frequency bands; while bulk acoustic wave filters are often used in high frequency bands, but their preparation process is complicated.
  • the 5G era is approaching, and people have put forward higher requirements for RF filters. People's increasing demand for communication frequency bands has made spectrum resources increasingly tight, and higher frequency bands have to be used. Since the surface acoustic wave filter has the advantage of low cost, the preparation of a high-performance high-frequency surface acoustic wave filter will greatly promote the development of the 5G era.
  • the object of the present invention is to provide a thin-film material surface acoustic wave device with GS layered electrodes.
  • the device has higher frequency, higher temperature stability, and at the same time has stronger integration performance.
  • the invention provides a surface acoustic wave device, which includes a substrate, a first-layer interdigital transducer, a silicon dioxide film, a piezoelectric film, and a second-layer interdigital transducer in sequence from bottom to top.
  • the substrate can be made of a material known in the art, which is not strictly limited; specifically, the substrate is selected from at least one of Si substrate, SiC substrate and sapphire substrate; The main function of the film is to support. At the same time, due to the difference in performance, different substrates will have a certain impact on the performance of the device; in specific embodiments, it can be a high-resistance (100) Si substrate with a thickness of 500 ⁇ m or a 6H with a thickness of 500 ⁇ m. -SiC substrate.
  • the internal structure of the first-layer interdigital transducer and the second-layer interdigital transducer are the same, and both include a metal bottom layer and a metal main body layer; the metal bottom layer is arranged at The lower part of the metal body layer.
  • the metal forming the metal underlayer includes at least one of Ti, Ni, Zr, and Cr;
  • the metal forming the metal body layer includes at least one of Al, Cu, Pt, and Mo;
  • the thickness of the metal primer layer is 1-50nm; specifically, it can be 5nm, 10nm, 5nm-10nm, 5nm-30nm or 2nm-30nm;
  • the thickness of the metal body layer is 20 to 200 nm; specifically, it can be 30 nm, 55 nm, 80 nm, 160 nm, 55 nm to 100 nm, 50 to 150 nm, 30 to 80 nm or 50 to 160 nm.
  • the line width of the interdigital transducer of the first layer and the interdigital transducer of the second layer are both 100nm ⁇ 5 ⁇ m, and specifically may be 0.5 ⁇ m, 0.25 ⁇ m, 0.25 ⁇ m ⁇ 0.5 ⁇ m , 0.20 ⁇ m ⁇ 1 ⁇ m or 0.20 ⁇ m ⁇ 3 ⁇ m, denoted as d; the distance between adjacent fingers of the interdigital transducer in each layer is 100nm ⁇ 15 ⁇ m, specifically 0.5 ⁇ m, 0.25 ⁇ m, 270nm, 350nm, 270nm ⁇ 350nm , 0.25 ⁇ m ⁇ 1 ⁇ m, 0.20 ⁇ m ⁇ 3 ⁇ m, 270nm ⁇ 10 ⁇ m or 3 ⁇ m ⁇ 15 ⁇ m, denoted as g2.
  • the first-layer interdigital transducer is embedded in the bottom of the silicon dioxide film
  • the interdigital transducers of the first-layer interdigital transducer and the second-layer interdigital transducer are arranged in a staggered distribution. Specifically, the distance between the interdigital transducer of the first layer of interdigital transducer and the adjacent two interdigital transducers of the second layer of interdigital transducer is equal, and this distance is denoted as g1.
  • the specific embodiment may be 10nm, 50nm or 10nm ⁇ 50nm.
  • the function of the silicon dioxide film is to fill the gap of the interdigital transducer of the first layer, reduce holes and regain a flat upper surface, at the same time realize temperature compensation, and improve the temperature stability of the device.
  • the thickness of the silicon dioxide film may be 20nm-40 ⁇ m, specifically may be 1 ⁇ m, 150nm, 180nm, 150nm-180nm or 100nm-20 ⁇ m, which can be specifically determined according to actual needs.
  • one of the first-layer interdigital transducer and the second-layer interdigital transducer is grounded, and the other is connected to a signal.
  • the material of the piezoelectric film is selected from at least one of zinc oxide, aluminum nitride, doped zinc oxide, and doped aluminum nitride.
  • the thickness of the piezoelectric film may be 20nm-40 ⁇ m, specifically 120nm, 156nm, 1 ⁇ m, 120nm-156nm or 100nm-20 ⁇ m, which can be specifically determined according to actual needs.
  • the doping element in the doped zinc oxide is at least one of V, Cr and Fe;
  • the doping amount of the doping element in the doped zinc oxide may be 0.3-5%, and specifically may be 1.96%.
  • the doping element in the doped aluminum nitride is Sc;
  • the doping amount of the doping element in the doped aluminum nitride can be 0.1-70%, specifically 43%.
  • the doping amount is an atomic percentage of the doped element atom content to the total metal element atom content of the doping material.
  • the present invention also provides a method for preparing the above-mentioned surface acoustic wave device, including the following steps: 1) preparing the first-layer interdigital transducer on the surface of the substrate by using photolithography technology and an electron beam evaporation method;
  • step 1) Use the method in step 1) to prepare a second layer of interdigital transducer on the piezoelectric film, and align it with the first layer of interdigital transducer according to the settings, and use the photolithography
  • the technique exposes the electrode PAD area of the interdigital transducer of the first layer to obtain the surface acoustic wave device.
  • step 1) a step of cleaning the surface of the substrate is further included.
  • the magnetron sputtering method, electron beam evaporation method, photolithography technology, chemical mechanical polishing, photolithography technology and alignment method are all commonly used methods in the field, and their conditions are also Conventional feasibility conditions.
  • the surface acoustic wave device of the present invention is applied to the preparation of a high-frequency device with temperature compensation performance and/or a surface acoustic wave device that is convenient for the integration of a radio frequency front end.
  • single-ended surface acoustic wave resonators can be prepared or used in the preparation of 5G surface acoustic wave devices that are convenient for radio frequency front-end integration.
  • Fig. 1 is a schematic cross-sectional view of the device of the present invention (the actual device has a large number of interdigital transducers, and only part of the interdigital transducer is cut out in the figure).
  • Figure 2 is a schematic cross-sectional view of the interdigital transducer in the device of the present invention.
  • the figure includes a metal primer layer and a metal main body layer.
  • FIG. 3 is a schematic cross-sectional view of a smaller area of the device of the present invention, and several key dimensions are marked to facilitate the description of the content of the invention and the embodiments.
  • FIG. 4 is a simulated vibration mode diagram of the surface acoustic wave resonator in Embodiment 1 of the present invention, and not all the substrates are shown in the figure.
  • Fig. 5 is a simulated admittance curve of the surface acoustic wave resonator in Example 1 of the present invention.
  • FIG. 6 is a simulated vibration mode diagram of the surface acoustic wave resonator in Embodiment 2 of the present invention, and not all the substrates are shown in the figure.
  • Fig. 7 is a simulated admittance curve of a surface acoustic wave resonator in Example 2 of the present invention.
  • the structure shown in Figure 1 was prepared, and a high-resistance (100) Si substrate with a thickness of 500 ⁇ m was used, followed by ultrasonic cleaning with acetone, alcohol, deionized water, and alcohol, and then dried with a nitrogen gun.
  • the first-layer interdigital transducer is prepared by photolithography and electron beam evaporation method. As shown in Fig. 3, the dimension line width d is 250nm, and the size g1 (is the interdigital and first-layer interdigital transducer of the first layer) The distance between adjacent fingers of the two-layer interdigital transducer, and all the distances are equal) is taken as 50nm, and g2 (the distance between adjacent interdigitals of the interdigital transducer in each layer) is taken as 350nm.
  • the material of the interdigital transducer is 5nm Ti metal base layer and 55nm Al metal main layer.
  • the specific preparation process is as follows: firstly, the photolithography process is carried out.
  • the specific steps of photolithography include surface cleaning and drying, primer coating, spin coating of photoresist, soft baking, exposure, post baking, developing, and hard baking.
  • the interdigital transducer pattern on the sample has been formed.
  • the sample into the electron beam evaporator for coating.
  • the specific experimental conditions of the electron beam evaporation method are as follows: the background vacuum is better than 9 ⁇ 10 -9 torr, and the Ti coating rate is Al coating rate is After the evaporation is completed, the sample is taken out from the evaporation machine and placed in acetone for peeling, thereby completing the preparation of the first-layer interdigital transducer.
  • background vacuum is better than 7 ⁇ 10 -5 Pa
  • silicon target reactive sputtering DC power supply
  • power supply 1000W Ar flow rate 18sccm
  • O 2 Flow rate 12sccm
  • room temperature coating coating pressure 0.5Pa
  • coating time 12min coating time 12min.
  • the surface of the silicon dioxide film is treated by chemical mechanical polishing technology.
  • the magnetron sputtering method is used to grow 120nm zinc oxide on the surface of the flat silicon dioxide film.
  • the specific experimental conditions are as follows: background vacuum is better than 8 ⁇ 10 -5 Pa, Zn target reactive sputtering, radio frequency power supply, power supply 140W, Ar flow rate 18sccm, O 2 flow rate 10sccm, coating temperature 350°C, coating pressure 0.8 Pa, coating time 15min.
  • the second-layer interdigital transducer is prepared by photolithography technology and electron beam evaporation method.
  • the size and specific preparation process of the interdigital transducer have been described in the preparation of the first-layer interdigital transducer.
  • the zinc oxide and silicon dioxide film above the electrode PAD area of the first interdigital transducer is etched by photolithography technology, so that it is exposed on the surface to facilitate the application of electrical signals.
  • the device described in this example has been prepared.
  • FIGs. 4 and 5 the simulation results are shown in Figs. 4 and 5. It can be seen from Figures 4 and 5 that the surface acoustic wave resonator can stably propagate high-order Rayleigh wave signals, and the signal is excellent.
  • the resonant frequency of the resonator is 8.4091 GHz
  • the anti-resonant frequency is 8.4166 GHz
  • the electromechanical coupling coefficient is 0.22%.
  • the structure shown in Figure 1 was prepared, and a 6H-SiC substrate with a thickness of 500 ⁇ m was used, which was ultrasonically cleaned with acetone, alcohol, deionized water, and alcohol in sequence, and then dried with a nitrogen gun.
  • the first-layer interdigital transducer is fabricated by photolithography and electron beam evaporation method, as shown in Fig. 3, the size d is 250 nm, the size g1 is 10 nm, and the size g2 is 270 nm.
  • the material of the interdigital transducer is 5nm Ti metal bottom layer and 55nm Al metal main layer.
  • the specific preparation process is as follows: firstly, the photolithography process is carried out.
  • the specific steps of photolithography include surface cleaning and drying, primer coating, spin coating of photoresist, soft baking, exposure, post baking, developing, and hard baking. After the photolithography is completed, the interdigital transducer pattern on the sample has been formed. Then put the sample into the electron beam evaporator for coating.
  • the specific experimental conditions of the electron beam evaporation method are as follows: the background vacuum is better than 9 ⁇ 10 -9 torr, and the Ti coating rate is Al coating rate is After the evaporation is completed, the sample is taken out from the evaporation machine and placed in acetone for peeling, thereby completing the preparation of the first-layer interdigital transducer.
  • background vacuum is better than 7 ⁇ 10 -5 Pa
  • silicon target reactive sputtering DC power supply
  • power supply 1000W Ar flow rate 18sccm
  • O 2 Flow 12sccm
  • room temperature coating coating pressure 0.5Pa
  • coating time 10min Using magnetron sputtering method to grow 150nm silicon dioxide, the specific experimental conditions are as follows: background vacuum is better than 7 ⁇ 10 -5 Pa, silicon target reactive sputtering, DC power supply, power supply 1000W, Ar flow rate 18sccm, O 2 Flow 12sccm, room temperature coating, coating pressure 0.5Pa, coating time 10min.
  • the surface of the silicon dioxide film is treated by chemical mechanical polishing technology.
  • the magnetron sputtering method is used to grow 156nm zinc oxide on the surface of the flat silicon dioxide film.
  • the specific experimental conditions are as follows: background vacuum is better than 8 ⁇ 10 -5 Pa, Zn target reactive sputtering, radio frequency power supply, power supply 140W, Ar flow rate 18sccm, O 2 flow rate 10sccm, coating temperature 350°C, coating pressure 0.8 Pa, the coating time is 19.5min.
  • the second-layer interdigital transducer is prepared by photolithography technology and electron beam evaporation method.
  • the size and specific preparation process of the interdigital transducer have been described in the preparation of the first-layer interdigital transducer.
  • the zinc oxide and silicon dioxide film above the electrode PAD area of the first interdigital transducer is etched by photolithography technology, so that it is exposed on the surface to facilitate the application of electrical signals.
  • the device described in this example has been prepared.
  • the surface acoustic wave resonator can stably propagate high-order Rayleigh wave signals, and the signal is good.
  • the resonant frequency of the resonator is 9.7664 GHz
  • the anti-resonant frequency is 9.7837 GHz
  • the electromechanical coupling coefficient is 0.44%.
  • the said surface acoustic wave device adopts the method of layering the ground terminal and the signal terminal of the interdigital transducer to further reduce the horizontal distance between the two signal terminal interdigits, thereby further reducing the distance on the basis of the prior art.
  • the wavelength increases the frequency of the device.
  • the surface acoustic wave device of the present invention introduces a dense and flat silicon dioxide film on the interdigital transducer, which not only improves the temperature stability of the device, but also ensures the quality of the entire device.
  • the device of the present invention has no special requirements on the substrate, and both the silicon dioxide layer and the piezoelectric layer are prepared by thin film technology, so the device is convenient for the integration of the radio frequency front end.
  • the surface acoustic wave device of the present invention meets the higher requirements for radio frequency filters in the 5G era.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

本发明公开了一种具有GS分层式电极的薄膜材料声表面波器件及其制备方法与应用。它由下至上依次包括基片、第一层叉指换能器、二氧化硅薄膜、压电薄膜和第二层叉指换能器。其制备方法包括如下步骤：1)利用光刻技术和电子束蒸镀方法，在基片表面制备第一层叉指换能器；2)利用磁控溅射方法，在第一层叉指换能器和基片上生长二氧化硅薄膜；3)使二氧化硅薄膜表面平整，然后采用磁控溅射的方法在其表面上生长压电薄膜；4)采用步骤1)中方法在压电薄膜上制备第二层叉指换能器，并将其与第一层叉指换能器按照设置对准，并利用光刻技术露出第一层叉指换能器的电极PAD区，即得。本发明具有更高的频率、较高的温度稳定性，同时具有更强的集成性能。

Description

一种具有GS分层式电极的薄膜材料声表面波器件及其制备方法与应用 技术领域
本发明涉及电子信息材料领域，尤其涉及一种声表面波器件及其制备方法与应用，具体涉及一种具有GS分层式电极的薄膜材料声表面波器件及其制备方法与应用。
背景技术
声表面波是在压电材料表面产生和传播的机械波。由于其灵敏度高、体积小、成本低，声表面波已被广泛应用于谐振器、滤波器、传感器、卷积器等电子器件中。尤其是在移动通信领域，声表面波滤波器发挥着至关重要的作用。
在射频前端模块中，射频滤波器的性能至关重要。声表面波滤波器和体声波滤波器是目前最主流的两种射频滤波器。声表面波滤波器制备简单，但其难以运用于高频段；而体声波滤波器则往往运用于高频段，但其制备工艺复杂。5G时代日益临近，人们对射频滤波器提出了更高的要求。人们对通信频段日益增长的需求使得频谱资源愈发紧张，从而不得不使用更高的频段。由于声表面波滤波器具有成本低廉的优势，制备得到高性能的高频声表面波滤波器将对5G时代的发展产生极大的推动作用。
目前主要有三种方法来提高声表面波器件的频率，分别为减小声波的周期，提高声速和采用具有更高频谐振的声波模态。由于这几种方式的采用会受到工艺水平和材料体系的限制，也会受到声波质量和制备成本的限制，近几年在如何提高声表面波器件的频率问题上，大家遇到了瓶颈，现需要一个新的方法来提高器件的频率。另外，高的温度稳定性一直是高性能滤波器研究的目标；而高的集成性能也是未来滤波器的一个发展方向。
发明公开
本发明的目的是提供一种具有GS分层式电极的薄膜材料声表面波器件。该器件具有更高的频率、较高的温度稳定性，同时具有更强的集成性能。
本发明提供的一种声表面波器件，它由下至上依次包括基片、第一层叉指换能器、二氧化硅薄膜、压电薄膜和第二层叉指换能器。
本发明中，所述基片采用本领公知的材质即可，没有严格的限定；具 体地，所述基片选自Si基片、SiC基片和蓝宝石基片中的至少一种；所述基片的主要作用为支撑作用，同时，由于性能差异，不同基片会对器件性能产生一定的影响；具体实施例中可为厚度为500μm的高阻(100)Si基片或厚度为500μm的6H-SiC基片。
上述的声表面波器件中，所述第一层叉指换能器与第二层叉指换能器的内部结构相同，均包括金属打底层和金属主体层组成；所述金属打底层设于所述金属主体层的下部。
上述的声表面波器件中，制成所述金属打底层的金属包括Ti、Ni、Zr和Cr中的至少一种；
制成所述金属主体层的金属包括Al、Cu、Pt和Mo中的至少一种；
所述金属打底层的厚度为1～50nm；具体可为5nm、10nm、5nm～10nm、5nm～30nm或2nm～30nm；
所述金属主体层的厚度为20～200nm；具体可为30nm、55nm、80nm、160nm、55nm～100nm、50～150nm、30～80nm或50～160nm。
上述的声表面波器件中，所述第一层叉指换能器与第二层叉指换能器的线宽均为100nm～5μm，具体可为0.5μm、0.25μm、0.25μm～0.5μm、0.20μm～1μm或0.20μm～3μm，记为d；每层中叉指换能器的相邻叉指间距为100nm～15μm，具体可为0.5μm、0.25μm、270nm、350nm、270nm～350nm、0.25μm～1μm、0.20μm～3μm、270nm～10μm或3μm～15μm，记为g2。
上述的声表面波器件中，所述第一层叉指换能器嵌入式设于所述二氧化硅薄膜的底部；
在水平方向的相对位置上，所述第一层叉指换能器与第二层叉指换能器的叉指交错分布设置。具体地，所述第一层叉指换能器的叉指与第二层叉指换能器的邻近的两个叉指间距相等，此间距记为g1，具体实施例可为10nm、50nm或10nm～50nm。
本发明中，两层叉指换能器的线宽相同，相邻叉指间距也相同，具有如下数值关系：g1+d+g1＝g2。通过对这三个尺寸的调控，可以实现对器件频率的调控。
上述器件中，所述二氧化硅薄膜的作用是填补所述第一层叉指换能器 的间隙，减少孔洞并重新得到平整的上表面，同时实现温度补偿，提高器件的温度稳定性。
本发明中，所述二氧化硅薄膜的厚度可为20nm～40μm，具体可为1μm、150nm、180nm、150nm～180nm或100nm～20μm，具体可根据实际需要确定。
上述的声表面波器件中，所述第一层叉指换能器和第二层叉指换能器中一个接地，则另一个接信号。
上述的声表面波器件中，所述压电薄膜的材质选自氧化锌、氮化铝、掺杂氧化锌和掺杂氮化铝中的至少一种。
所述压电薄膜的厚度可为20nm～40μm，具体可为120nm、156nm、1μm、120nm～156nm或100nm～20μm，具体可根据实际需要确定。
上述的声表面波器件中，所述掺杂氧化锌中掺杂元素为V、Cr和Fe中的至少一种；
所述掺杂氧化锌中掺杂元素的掺杂量可为0.3～5％，具体可为1.96％。
所述掺杂氮化铝中掺杂元素为Sc；
所述掺杂氮化铝中掺杂元素的掺杂量可为0.1～70％，具体可为43％。
本发明中，所述掺杂量为掺杂的元素原子含量占所述掺杂物质金属元素原子总含量的原子百分比。
本发明还提供了上述的声表面波器件的制备方法，包括如下步骤：1)利用光刻技术和电子束蒸镀方法，在所述基片表面制备所述第一层叉指换能器；
2)利用磁控溅射方法，在所述第一层叉指换能器和所述基片上生长所述二氧化硅薄膜；
3)采用化学机械抛光和/或所述刻蚀的方法使所述二氧化硅薄膜表面平整，然后采用磁控溅射的方法在其表面上生长所述压电薄膜；
4)采用步骤1)中方法在所述压电薄膜上制备第二层叉指换能器，并将其与所述第一层叉指换能器按照设置对准，并利用所述光刻技术露出第一层叉指换能器的电极PAD区，即得到所述声表面波器件。
上述的制备方法中，步骤1)之前还包括将所述基片表面清洗的步骤。
本发明制备方法中，采用的所述磁控溅射方法、电子束蒸镀方法、光刻技术、化学机械抛光、光刻技术和对准方法都是本领域中常用的方法，其条件也为常规的可行性条件。
本发明所述的声表面波器件应用于作为高频且具有温度补偿性能的器件和/或便于射频前端集成的声表面波器件制备中。具体可制备单端声表面波谐振器或应用于5G的便于射频前端集成的声表面波器件制备中。
附图说明
图1是本发明所述器件的截面示意图(真实器件的叉指换能器对数较多，图中仅截取部分叉指换能器示意)。
图2是本发明所述器件中叉指换能器的截面示意图，图中包括金属打底层和金属主体层。
图3是本发明所述器件更小范围的截面示意图，并对几个关键尺寸进行了标记，便于发明内容及实施例中的描述。
图4是本发明实施例1中声表面波谐振器的模拟振型图，图中基片未全部展示。
图5是本发明实施例1中声表面波谐振器的模拟导纳曲线。
图6是本发明实施例2中声表面波谐振器的模拟振型图，图中基片未全部展示。
图7是本发明实施例2中声表面波谐振器的模拟导纳曲线。
图中各个标记如下：
1基片；2第一层叉指换能器；3二氧化硅薄膜；4压电薄膜；5第二层叉指换能器；6叉指换能器中的金属打底层；7叉指换能器中的金属主体层。
实施发明的最佳方式
下述实施例中的实验方法，如无特别说明，均为常规方法
实施例1、
制备如图1所示结构，采用厚度为500μm的高阻(100)Si基片，依次经过丙酮、酒精、去离子水、酒精超声清洗，然后用氮气枪吹干。
利用光刻技术和电子束蒸镀方法制备第一层叉指换能器，如图3所示，尺寸线宽d取250nm，尺寸g1(为第一层叉指换能器的叉指与第二层叉指换能器的邻近叉指的间距，且所有间距相等)取50nm，g2(每层中叉指换能器的相邻叉指间距)取350nm。叉指换能器材料为5nm Ti金属打底层和55nm Al金属主体层。具体制备过程为，首先进行光刻工艺，光刻的具体步骤包括表面清洗烘干、涂底、旋涂光刻胶、软烘、曝光、后烘、显影、硬烘。光刻完成后样品上的叉指换能器图形已经形成。之后将样品放入电子束蒸镀机镀膜。电子束蒸镀方法具体实验条件如下：本底真空优于9×10 -9torr，Ti镀膜速率为
Figure PCTCN2020102273-appb-000001
Al镀膜速率为
Figure PCTCN2020102273-appb-000002
蒸镀完成后，从蒸镀机中取出样品并置于丙酮中剥离，从而完成第一层叉指换能器的制备。
采用磁控溅射方法生长180nm二氧化硅，具体实验条件如下：本底真空度优于7×10 -5Pa，采用硅靶反应溅射，直流电源，电源功率1000W，Ar流量18sccm，O 2流量12sccm，常温镀膜，镀膜气压0.5Pa，镀膜时间12min。
利用化学机械抛光技术对二氧化硅薄膜表面进行处理。
采用磁控溅射方法在平整的二氧化硅薄膜表面生长120nm氧化锌。具体实验条件如下：本底真空度优于8×10 -5Pa，采用Zn靶反应溅射，采用射频电源，电源功率140W，Ar流量18sccm，O 2流量10sccm，镀膜温度350℃，镀膜气压0.8Pa，镀膜时间15min。
利用光刻技术和电子束蒸镀方法制备第二层叉指换能器。叉指换能器的尺寸和具体制备过程在第一层叉指换能器的制备中已经描述。制备第二层叉指换能器时应注意对准以保证图1结构的实现。
利用光刻技术刻除第一层叉指换能器的电极PAD区上方的氧化锌和二氧化硅薄膜，使其暴露在表面便于施加电信号。本实施例所述器件便制备完成。
若采用本实施例制备单端声表面波谐振器，其仿真结果如图4、5所示。由图4、5可知，该声表面波谐振器能够稳定地传播高阶瑞利波信号，且信号极好。该谐振器的谐振频率为8.4091GHz，反谐振频率为8.4166GHz，机电耦合系数为0.22％。
实施例2、
制备如图1所示结构，采用厚度为500μm的6H-SiC基片，依次经过丙酮、酒精、去离子水、酒精超声清洗，然后用氮气枪吹干。
利用光刻技术和电子束蒸镀方法制备第一层叉指换能器，如图3所示，尺寸d取250nm，尺寸g1取10nm，g2取270nm。叉指换能器材料为5nm Ti金属打底层和55nm Al金属主体层。具体制备过程为，首先进行光刻工艺，光刻的具体步骤包括表面清洗烘干、涂底、旋涂光刻胶、软烘、曝光、后烘、显影、硬烘。光刻完成后样品上的叉指换能器图形已经形成。之后将样品放入电子束蒸镀机镀膜。电子束蒸镀方法具体实验条件如下：本底真空优于9×10 -9torr，Ti镀膜速率为
Figure PCTCN2020102273-appb-000003
Al镀膜速率为
Figure PCTCN2020102273-appb-000004
Figure PCTCN2020102273-appb-000005
蒸镀完成后，从蒸镀机中取出样品并置于丙酮中剥离，从而完成第一层叉指换能器的制备。
采用磁控溅射方法生长150nm二氧化硅，具体实验条件如下：本底真空度优于7×10 -5Pa，采用硅靶反应溅射，直流电源，电源功率1000W，Ar流量18sccm，O 2流量12sccm，常温镀膜，镀膜气压0.5Pa，镀膜时间10min。
利用化学机械抛光技术对二氧化硅薄膜表面进行处理。
采用磁控溅射方法在平整的二氧化硅薄膜表面生长156nm氧化锌。具体实验条件如下：本底真空度优于8×10 -5Pa，采用Zn靶反应溅射，采用射频电源，电源功率140W，Ar流量18sccm，O 2流量10sccm，镀膜温度350℃，镀膜气压0.8Pa，镀膜时间19.5min。
利用光刻技术和电子束蒸镀方法制备第二层叉指换能器。叉指换能器的尺寸和具体制备过程在第一层叉指换能器的制备中已经描述。制备第二层叉指换能器时应注意对准以保证图1结构的实现。
利用光刻技术刻除第一层叉指换能器的电极PAD区上方的氧化锌和二氧化硅薄膜，使其暴露在表面便于施加电信号。本实施例所述器件便制备完成。
若采用本实施例制备单端声表面波谐振器，其仿真结果如图6、7所示。该声表面波谐振器能够稳定地传播高阶瑞利波信号，且信号较好。该谐振器的谐振频率为9.7664GHz，反谐振频率为9.7837GHz，机电耦合系 数为0.44％。
工业应用
1.所述的声表面波器件采用将叉指换能器的接地端和信号端分层的方式，进一步缩小两信号端叉指之间的水平距离，从而在现有技术基础上进一步缩小了波长，提高了器件的频率。
2.本发明声表面波器件在叉指换能器上引入致密平整的二氧化硅薄膜，既提升了器件的温度稳定性，也能够保证整个器件的品质。
3.本发明所述器件对基片没有特别的要求，二氧化硅层与压电层均采用薄膜工艺制备，因此所述器件便于射频前端的集成。
4.本发明所述的声表面波器件符合5G时代对于射频滤波器更高的要求。

Claims (12)

  1. 一种声表面波器件，它由下至上依次包括基片、第一层叉指换能器、二氧化硅薄膜、压电薄膜和第二层叉指换能器。
  2. 根据权利要求1所述的声表面波器件，其特征在于：所述第一层叉指换能器与第二层叉指换能器的内部结构相同，均包括金属打底层和金属主体层组成；所述金属打底层设于所述金属主体层的下部。
  3. 根据权利要求2所述的声表面波器件，其特征在于：制成所述金属打底层的金属包括Ti、Ni、Zr和Cr中的至少一种；
    制成所述金属主体层的金属包括Al、Cu、Pt和Mo中的至少一种；
    所述金属打底层的厚度为1～50nm；
    所述金属主体层的厚度为20～200nm。
  4. 根据权利要求3所述的声表面波器件，其特征在于：所述金属打底层的厚度为2～30nm；
    所述金属主体层的厚度为50～150nm。
  5. 根据权利要求1或2所述的声表面波器件，其特征在于：所述第一层叉指换能器与第二层叉指换能器的线宽均为100nm～5μm，每层中叉指换能器的相邻叉指间距为100nm～15μm。
  6. 根据权利要求5所述的声表面波器件，其特征在于：所述第一层叉指换能器与第二层叉指换能器的线宽均为200nm～3μm，每层中叉指换能器的相邻叉指间距为270nm～10μm。
  7. 根据权利要求1或2所述的声表面波器件，其特征在于：所述第一层叉指换能器嵌入式设于所述二氧化硅薄膜的底部；
    在水平方向的相对位置上，所述第一层叉指换能器与第二层叉指换能器的叉指交错分布设置。
  8. 根据权利要求1或2所述的声表面波器件，其特征在于：所述第一层叉指换能器和第二层叉指换能器中一个接地，则另一个接信号。
  9. 根据权利要求1所述的声表面波器件，其特征在于：所述压电薄膜的材质选自氧化锌、氮化铝、掺杂氧化锌和掺杂氮化铝中的至少一种。
  10. 根据权利要求9所述的声表面波器件，其特征在于：所述掺杂氧化锌中掺杂元素为V、Cr和Fe中的至少一种；
    所述掺杂氧化锌中掺杂元素的掺杂量为0.3～5％。
    所述掺杂氮化铝中掺杂元素为Sc；
    所述掺杂氮化铝中掺杂元素的掺杂量为0.1～70％。
  11. 权利要求1-10中任一项所述的声表面波器件的制备方法，包括如下步骤：1)利用光刻技术和电子束蒸镀方法，在所述基片表面制备所述第一层叉指换能器；
    2)利用磁控溅射方法，在所述第一层叉指换能器和所述基片上生长所述二氧化硅薄膜；
    3)采用化学机械抛光和/或刻蚀的方法使所述二氧化硅薄膜表面平整，然后采用磁控溅射的方法在其表面上生长所述压电薄膜；
    4)采用步骤1)中方法在所述压电薄膜上制备第二层叉指换能器，并将其与所述第一层叉指换能器按照设置对准，并利用光刻技术露出第一层叉指换能器的电极PAD区，即得到所述声表面波器件。
  12. 权利要求1-10中任一项所述的声表面波器件作为高频且具有温度补偿性能的器件和/或在便于射频前端集成的声表面波器件制备中的应用。
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