WO2021085913A1 - Bague de mise au point de type à accouplement - Google Patents

Bague de mise au point de type à accouplement Download PDF

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Publication number
WO2021085913A1
WO2021085913A1 PCT/KR2020/014291 KR2020014291W WO2021085913A1 WO 2021085913 A1 WO2021085913 A1 WO 2021085913A1 KR 2020014291 W KR2020014291 W KR 2020014291W WO 2021085913 A1 WO2021085913 A1 WO 2021085913A1
Authority
WO
WIPO (PCT)
Prior art keywords
ring
coupling
heat conduction
plasma exposure
conduction support
Prior art date
Application number
PCT/KR2020/014291
Other languages
English (en)
Korean (ko)
Inventor
박진경
Original Assignee
주식회사 티이엠
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 티이엠 filed Critical 주식회사 티이엠
Priority to CN202080075253.9A priority Critical patent/CN114600220A/zh
Publication of WO2021085913A1 publication Critical patent/WO2021085913A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/21—Means for adjusting the focus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Definitions

  • the present invention relates to a combined focus ring, and more particularly, to a combined focus ring capable of replacing only a portion that is exposed to plasma and consumes etching by separating and assembling a plurality of focus rings.
  • an etching technique used to manufacture a semiconductor is a technique of processing a film formed on a semiconductor substrate into a desired pattern, and an etching apparatus is used for such processing.
  • an etching apparatus for forming a pattern using plasma is called a plasma etching apparatus or a dry etching apparatus, and such a dry etching apparatus is mainly used in technologies requiring a design rule of 0.15 ⁇ m or less.
  • FIG. 1 shows a general dry etching apparatus.
  • An electrostatic chuck 11 is provided in the process chamber 10 to allow the wafer W to be mounted, and a lower electrode 12 is provided on the bottom of the electrostatic chuck 11. Is provided, and the upper electrode 13 is provided at a predetermined height from the electrostatic chuck 11.
  • a reaction gas is supplied from the top or one side of the process chamber 10 in which the upper electrode 13 is provided.
  • the wafer W is mounted on the electrostatic chuck 11 of the process chamber 10 and a reactive gas is supplied to the inside while applying an RF bias to the lower electrode 12 and the upper electrode 13, the wafer ( As plasma is generated on the upper portion of W), the plasma collides with the film quality of the wafer W, so that etching is performed.
  • the wafer (W) in the electrostatic chuck (11) is usually covered outside by the edge ring (14), and the plasma is uniform to the wafer (W) edge ring (14). It is distributed in a way.
  • the focus ring consists of an outer ring and an inner ring. It is divided and formed, but the outer ring and the inner ring are separated from each other in a vertical shape, and the wafer is in contact only with the upper end of the inner ring.
  • the outer ring is positioned on the outer side of the wafer and is in contact with the inner cover ring, and the inner ring is coupled to the inner side of the outer ring.
  • a plasma potential difference is generated due to the generation of a gap between the outer ring and the inner ring, which causes a problem in the wafer edge yield due to a change in the plasma sheath.
  • the present invention has been devised to solve the above problems, and the object is to separate and assemble a plurality of focus rings in the vertical and horizontal directions, so that only the upper plasma exposed part can be replaced, and each focus ring is made of the same material.
  • the coupling type focus ring for achieving the above object includes an upper plasma exposure ring disposed on an upper and outer side of an electrostatic chuck, a lower thermally conductive support ring closely assembled to a lower portion of the upper plasma exposure ring, and the A coupling ring assembled to the outside of the lower heat conduction support ring, a first coupling part coupling the upper plasma exposure ring and the lower heat conduction support ring, and a second coupling part coupling the upper plasma exposure ring and the coupling ring. have.
  • the first coupling portion includes a first assembly tab formed outside an inner surface of the upper plasma exposure ring, and a first assembly tab formed on an upper outer surface of the lower heat conduction support ring and is combined with the first assembly tab to form an upper plasma exposure ring and a lower heat conduction support ring. It may include a second assembly tab that combines.
  • the first assembly tab is formed on a lower outer surface of the upper plasma exposure ring, and the second assembly tab is formed on an upper inner surface of the lower heat conduction support ring to be assembled with the first assembly tab.
  • the second coupling portion includes a first fastening tab formed outside the outer surface of the upper plasma exposure ring, and a first fastening tab formed on the upper inner side of the coupling ring and coupled to the first fastening cap to couple the upper plasma exposed ring and the coupling ring. It can include 2 fastening tabs.
  • It may further include a step portion formed on the lower heat conductive support ring and the coupling ring to increase adhesion efficiency when the lower heat conductive support ring and the coupling ring are assembled.
  • the stepped portion may include an upper stepped portion formed on an upper and outer side of the lower heat conduction support ring, and a lower stepped portion formed on an inner upper side of the coupling ring and in close contact with the upper stepped portion.
  • a thermally conductive sheet may be further included to increase thermal conductivity by being provided between the upper plasma exposure ring and the lower thermally conductive support ring.
  • the thermally conductive sheet may be made of silicon, but may contain an additive having high thermal conductivity such as alumina or silicon carbide (SiC).
  • a bolt fastening groove is formed in the lower part of the upper plasma exposure ring, and an insertion groove is formed in the lower heat conduction support ring so as to penetrate up and down to communicate with the bolt fastening groove, so that the fastening bolt can be fastened to the insertion groove and the bolt fastening groove.
  • the focus ring is divided into a plurality of upper plasma exposure rings and lower heat conduction support rings in the vertical and horizontal directions, and is assembled in a screw manner as a first coupling part, and the upper plasma exposure ring and The inner and outer sides of the lower heat conduction support ring are uniformly adhered and the coupling ring is closely attached to the lower part of the lower heat conduction support ring, and the upper plasma exposure ring and the lower heat conduction support ring are assembled in a screw manner. It adheres as closely as possible without occurrence, so that there is no difference in the temperature transfer rate, thus maximizing productability.
  • the upper plasma exposure ring and the lower heat conduction support ring have different lifetimes, so that the replacement cycle can be changed, thereby reducing cost.
  • FIG. 1 is a side cross-sectional view showing a general etching apparatus.
  • FIG. 2 is an exploded perspective view showing a combined focus ring according to the present invention.
  • FIG. 3 is a combined perspective view showing a combined focus ring according to the present invention.
  • FIG. 4 is a cross-sectional view showing a combined focus ring according to the present invention.
  • FIG. 5 is a cross-sectional view showing a state before the coupling type focus ring according to FIG. 4 is coupled.
  • FIG. 6 is a sectional view showing another assembly state of the combined focus ring according to the present invention.
  • FIG. 7 is a sectional view showing another assembly state of the combined focus ring according to the present invention.
  • FIG. 8 is an exploded perspective view showing another example of a combined focus ring according to the present invention.
  • FIG. 9 is a combined cross-sectional view showing the combined focus ring according to FIG. 8.
  • bolt fastening groove 120 lower heat conduction support ring
  • first coupling portion 141 first assembly tab
  • first fastening tab 152 second fastening tab
  • stepped portion 161 upper stepped
  • the expression'and/or' is used as a meaning including at least one of the elements listed before and after.
  • the expression'connected/combined' is used as a meaning including direct connection with other components or indirect connection through other components.
  • the singular form also includes the plural form unless otherwise specified in the phrase.
  • elements, steps, operations and elements referred to as'comprising' or'including' as used in the specification mean the presence or addition of one or more other elements, steps, operations and elements.
  • each layer (film), region, pattern, or structure is “on” or “under” of the substrate, each side (film), region, pad, or patterns.
  • the description that "is formed in” includes all that are formed directly or through another layer.
  • the standards for the top/top or bottom/bottom of each layer will be described based on the drawings.
  • FIG. 2 is an exploded perspective view showing a combined focus ring according to the present invention
  • FIG. 3 is a combined perspective view showing a combined focus ring according to the present invention
  • FIG. 4 is a combined perspective view showing a combined focus ring according to the present invention. It is a sectional view
  • FIG. 5 is a sectional view showing a state before the engagement of the combined focus ring according to FIG. 4
  • FIG. 6 is a sectional view showing another assembly state of the combined focus ring according to the present invention
  • FIG. 7 Is a sectional view showing another assembly state of the combined focus ring according to the present invention
  • FIG. 8 is an exploded perspective view showing another example of the combined focus ring according to the present invention
  • FIG. 9 is It is a combined cross-sectional view showing the combined focus ring.
  • the coupling type focus ring 100 includes an upper plasma exposure ring 110, a lower heat conduction support ring 120, a coupling ring 130, and a first The coupling part 140 and the second coupling part 150 are included.
  • the upper plasma exposure ring 110 is placed outside the top of an electrostatic chuck (not shown) of a semiconductor etching apparatus.
  • the upper plasma exposure ring 110 may be made of at least one of silicon, silicon carbide (SiC), boron carbide (B4C), silica (SiO2), and alumina.
  • the lower heat conduction support ring 120 is processed separately from the upper plasma exposure ring 110 and is in close contact with the lower portion of the upper plasma exposure ring 110.
  • the lower thermal conductive support ring 120 may be made of at least one of silicon, silicon carbide (SiC), boron carbide (B4C), silica (SiO2), aluminum oxide (AL2O3), and alumina.
  • the coupling ring 130 is in close contact with the outer side of the lower heat conduction support ring 120 to be coupled to the upper plasma exposure ring 110.
  • the coupling ring 130 may be made of at least one of silicon, silicon carbide (SiC), boron carbide (B4C), silica (SiO2), aluminum oxide (AL2O3), and alumina.
  • the first coupling part 140 is provided on the upper plasma exposure ring 110 and the lower heat conduction support ring 120 to separate the upper plasma exposure ring 110 and the lower heat conduction support ring 120.
  • first coupling part 140 couples the lower heat conduction support ring 120 to the lower portion of the upper plasma exposure ring 110, but the inner and outer sides of the upper plasma exposure ring 110 and the lower heat conduction support ring 120 Can be uniformly adhered.
  • the first coupling part 140 includes a first assembly tab 141 and a second assembly tab 142.
  • the first assembly tab 141 is formed outside the inner surface of the upper plasma exposure ring 110.
  • first assembly tab 141 is formed with a screw thread so that the upper plasma exposure ring 110 and the lower heat conduction support ring 120 can be screwed together, but preferably may be formed of a female thread.
  • the second assembly tab 142 is formed on the upper outer surface of the lower heat conduction support ring 120.
  • the second assembly tab 142 is coupled with the first assembly tab 141 to form a thread so that the upper plasma exposure ring 110 and the lower heat conduction support ring 120 can be coupled, but preferably a male thread. It can be formed as
  • first assembly tab 141 and the second assembly tab 142 may be formed of a female thread and a male thread to each other, and may be fastened by a screw method.
  • the first assembly tab 141 is formed on the lower outer surface of the upper plasma exposure ring 110, and the second assembly tab 142 is formed on the lower heat conduction support ring 120. It is formed on the upper inner surface and may be connected to the first assembly tab 141.
  • the first assembly tab 141 is formed of a male thread and the second assembly tab 142 is formed of a female thread, so that the upper plasma exposure ring 110 and the lower heat conduction support ring 120 are screwed. Can be combined.
  • the second coupling part 150 couples the upper plasma exposure ring 110 and the coupling ring 130.
  • the second coupling part 150 includes a first fastening tab 151 and a second fastening tab 152.
  • first fastening tab 151 may be screw-assembled with the upper plasma exposed ring 110 and the coupling ring 130 in a state in which the upper plasma exposure ring 110 and the lower heat conduction support ring 120 are assembled.
  • the thread is formed so that it may be preferably formed of a male thread.
  • the second fastening tab 152 is formed on the upper inner side of the coupling ring 130.
  • the second fastening tab 152 is coupled with the first fastening tab 151 to form a screw thread so that the upper plasma exposure ring 110 and the coupling ring 130 can be coupled, but preferably formed of a female thread. Can be.
  • first fastening tab 151 and the second fastening tab 152 may be formed of a female thread and a male thread to each other, and may be fastened by a screw method.
  • the coupling ring 130 is coupled to the upper plasma exposure ring 110
  • the stepped portion 160 may be formed to increase the adhesion efficiency.
  • the stepped portion 160 includes an upper step 161 formed on an upper and outer side of the lower heat conduction support ring 120, and a lower step 161 formed on the inner upper side of the coupling ring 130 and in close contact with the upper step 161 ( 162).
  • the lower heat conduction support ring 120 in a state in which the lower heat conduction support ring 120 is separated in a horizontal direction under the upper plasma exposure ring 110 and is assembled by the screw method of the first coupling part 140, the lower heat conduction support ring 120
  • the coupling ring 130 is coupled to the upper plasma exposure ring 110 and the second coupling portion 150 on the outer surface, the upper plasma exposure ring 110 and the lower heat conduction support ring 120 are formed by the stepped portion 160. ) Can be firmly adhered to without gaps.
  • the upper plasma exposure ring 110 and the lower heat conduction support ring 120 may be fastened with a fastening bolt (B).
  • a bolt fastening groove 111 may be formed under the upper plasma exposure ring 110 so that a fastening bolt B can be fastened.
  • the lower heat conduction support ring 120 has an insertion groove 121 through the top and bottom so as to communicate with the bolt fastening groove 111, and a fastening bolt (B) is inserted through the insertion groove 121 It can be fastened to the bolt fastening groove 111.
  • a heat conductive sheet 200 may be inserted between the upper plasma exposure ring 110 and the lower heat conduction support ring 120 to increase thermal conductivity.
  • the thermally conductive sheet 200 is made of silicon, but may contain an additive having high thermal conductivity of alumina or silicon carbide (SiC).
  • the combined focus ring 100 is divided into a plurality of the upper plasma exposure ring 110 and the lower heat conduction support ring 120 without being processed using a single workpiece, and processed separately.
  • the lower heat conduction support ring 120 is separated in a horizontal direction under the upper plasma exposure ring 110, and the first assembly tab 141 and the second assembly tab 142 are coupled in a screw manner.
  • the upper plasma exposure ring 110 and the lower heat conduction support ring 120 are assembled.
  • the upper plasma exposure ring 110 and the lower heat conduction support ring 120 are separated so that the upper and lower heat conduction support rings 120 are horizontally arranged, and are coupled to the first coupling part 140 using a screw thread.
  • the lower heat conduction support ring 120 are as firmly and uniformly close as possible so that a gap does not occur inside or outside the upper plasma exposure ring 110 and the lower heat conduction support ring 120.
  • the replacement cycle may be changed, thereby reducing the replacement cost.
  • the upper plasma exposure ring 110 and the lower heat conduction support ring 120 are assembled through the first coupling part 140, and the coupling ring 130 is connected to the upper plasma exposure ring 110 and the second coupling part ( 150), the contact portion between the upper plasma exposure ring 110 and the lower heat conduction support ring 120 is firmly adhered to each other so that a gap does not occur, so that the plasma heat transferred to the plasma exposed surface is uniform in the lower heat conduction support ring.
  • One temperature can be maintained so that no process change occurs.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

La présente invention concerne une bague de mise au point de type à accouplement, la bague de mise au point étant séparée en une pluralité de parties et assemblée de manière à permettre le remplacement d'une partie seulement qui a été utilisée suite à une gravure en étant exposée au plasma, la bague de mise au point de type à accouplement comprenant : une bague d'exposition au plasma supérieure placée sur le côté extérieur de la partie supérieure d'un mandrin électrostatique ; une bague de support de conduction thermique inférieure assemblée sur la partie inférieure de la bague d'exposition au plasma supérieure de façon à adhérer étroitement à celle-ci ; une bague d'accouplement assemblée sur le côté extérieur de la bague de support de conduction thermique inférieure ; une première partie de accouplement pour coupler la bague d'exposition au plasma supérieure avec la bague de support de conduction thermique inférieure ; et une seconde partie de accouplement pour coupler la bague d'exposition au plasma supérieure avec la bague d'accouplement .
PCT/KR2020/014291 2019-10-31 2020-10-20 Bague de mise au point de type à accouplement WO2021085913A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202080075253.9A CN114600220A (zh) 2019-10-31 2020-10-20 结合型聚焦环

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190137964A KR102102131B1 (ko) 2019-10-31 2019-10-31 결합형 포커스 링
KR10-2019-0137964 2019-10-31

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Publication Number Publication Date
WO2021085913A1 true WO2021085913A1 (fr) 2021-05-06

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KR (1) KR102102131B1 (fr)
CN (1) CN114600220A (fr)
WO (1) WO2021085913A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102102131B1 (ko) * 2019-10-31 2020-04-20 주식회사 테크놀로지메이컬스 결합형 포커스 링
KR102464460B1 (ko) * 2020-12-22 2022-11-09 (주)원세미콘 반도체 식각장치의 플라즈마 쉬라우드 링 및 그 체결방법
KR102561485B1 (ko) 2021-08-20 2023-07-28 에스케이엔펄스 주식회사 분할형 에지링 및 이의 세라믹 부품
KR102427214B1 (ko) 2021-11-12 2022-08-01 비씨엔씨 주식회사 결합 및 분해가 가능한 반도체용 포커스 링 조립체
KR102652093B1 (ko) * 2022-04-01 2024-03-28 세메스 주식회사 포커스 링 유닛 및 기판처리장치
KR20230159182A (ko) 2022-05-13 2023-11-21 비씨엔씨 주식회사 반도체 식각공정용 세라믹 링 및 그의 제조방법

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JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
KR101171422B1 (ko) * 2008-06-19 2012-08-06 도쿄엘렉트론가부시키가이샤 포커스 링 및 플라즈마 처리 장치
JP2014222786A (ja) * 2008-08-15 2014-11-27 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 温度制御式ホットエッジリング組立体
JP2016039344A (ja) * 2014-08-11 2016-03-22 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
KR102102131B1 (ko) * 2019-10-31 2020-04-20 주식회사 테크놀로지메이컬스 결합형 포커스 링

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KR20050091854A (ko) 2004-03-11 2005-09-15 삼성전자주식회사 반도체 웨이퍼 제조 장치의 포커스 링

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Publication number Priority date Publication date Assignee Title
KR20050067148A (ko) * 2002-10-02 2005-06-30 엥징게르 쿤츠토프테크놀러지 게베알 화학적 및 기계적 폴리싱장치의 반도체 웨이퍼 유지용고정링
KR101171422B1 (ko) * 2008-06-19 2012-08-06 도쿄엘렉트론가부시키가이샤 포커스 링 및 플라즈마 처리 장치
JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
JP2014222786A (ja) * 2008-08-15 2014-11-27 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 温度制御式ホットエッジリング組立体
JP2016039344A (ja) * 2014-08-11 2016-03-22 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
KR102102131B1 (ko) * 2019-10-31 2020-04-20 주식회사 테크놀로지메이컬스 결합형 포커스 링

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KR102102131B1 (ko) 2020-04-20

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