WO2021085160A1 - Substrate processing method - Google Patents

Substrate processing method Download PDF

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Publication number
WO2021085160A1
WO2021085160A1 PCT/JP2020/038918 JP2020038918W WO2021085160A1 WO 2021085160 A1 WO2021085160 A1 WO 2021085160A1 JP 2020038918 W JP2020038918 W JP 2020038918W WO 2021085160 A1 WO2021085160 A1 WO 2021085160A1
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Prior art keywords
substrate
processing method
substrate processing
thickness
film
Prior art date
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PCT/JP2020/038918
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French (fr)
Japanese (ja)
Inventor
大輝 日野出
喬 太田
隆夫 板原
恭平 中西
達矢 島野
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication date
Application filed by 株式会社Ｓｃｒｅｅｎホールディングス filed Critical 株式会社Ｓｃｒｅｅｎホールディングス
Priority to US17/770,653 priority Critical patent/US20220367218A1/en
Priority to CN202080074806.9A priority patent/CN114616649A/en
Publication of WO2021085160A1 publication Critical patent/WO2021085160A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0691—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of objects while moving

Definitions

  • the present invention relates to a substrate processing method, and more particularly to a substrate processing method using a processing liquid.
  • substrate In the manufacturing process of a semiconductor substrate (hereinafter, simply referred to as "substrate”), various processing is performed on the substrate by using a substrate processing apparatus. For example, an etching process is performed in which the film formed on the upper surface of the substrate is removed using a treatment liquid.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2003-97919
  • the film thickness of the thin film is detected in real time in the process of supplying the etching solution to the surface of the wafer and etching the thin film on the surface halfway. Etching. Then, when the film thickness detection value reaches the target film thickness, the etching is stopped. As a result, it is intended to leave a thin film whose target film thickness is controlled with high accuracy on the wafer surface.
  • the thickness of the film to be treated in the substrate treatment is not the same at every position on the substrate. Since the substrate treatment described in the above publication does not take this point into consideration, the performance of the device manufactured by the manufacturing method including the substrate treatment may be insufficient. From another point of view, the manufacturing yield of a semiconductor device having sufficient performance may be low.
  • the present invention has been made in view of the problems described above, and an object of the present invention is to provide a substrate processing method suitable for manufacturing a semiconductor device having sufficient performance.
  • the substrate processing method is a substrate that has a radial direction, has a plurality of chip regions provided with a structure serving as a power device, and processes at least one substrate provided with a film to be processed. It ’s a processing method, (A) A step of measuring the thickness profile of the film to be processed in the radial direction by scanning the sensor in the radial direction while rotating the substrate. (B) A step of calculating the average thickness of the thickness profile and (C) A step of extracting at least one radial position in which the thickness profile has the average thickness as at least one candidate position.
  • (D) A step of determining at least one of the at least one candidate position as at least one measurement position
  • (E) A step of supplying a processing liquid from a nozzle onto the film to be processed on the substrate while rotating the substrate.
  • (F) A step of monitoring the temporal change in the thickness of the film to be processed by the sensor at at least one measurement position while rotating the substrate.
  • a substrate processing method has at least one chip region having a radial direction, a structure for becoming a semiconductor device which is a non-power device, and a film to be processed. It is a substrate processing method for processing a substrate.
  • (D) A step of determining at least one of the at least one candidate position as at least one measurement position
  • (E) A step of supplying a processing liquid from a nozzle onto the film to be processed on the substrate while rotating the substrate.
  • (F) A step of monitoring the temporal change in the thickness of the film to be processed by the sensor at at least one measurement position while rotating the substrate.
  • the average thickness of the film to be processed can be controlled with high accuracy.
  • the thickness of the film to be treated can be made to be just right. Therefore, in a power device having a current path along the thickness direction of the film to be treated, it is possible to avoid excessive electrical resistance due to excessive thickness and insufficient withstand voltage due to excessive thickness. Can be avoided.
  • the minimum thickness of the film to be processed can be controlled with high accuracy. This prevents the substrate processing from proceeding excessively. Therefore, it is possible to avoid adverse effects on the characteristics of the semiconductor device due to unintentional erosion of the portion covered with the film to be treated.
  • FIG. 5 is a schematic partial cross-sectional view taken along the line VI-VI of FIG. It is a sequence diagram which shows the example of the substrate processing method in Embodiment 1.
  • FIG. 7 is a flowchart corresponding to FIG. 7.
  • FIG. It is a schematic diagram explaining the example of the measurement of the thickness profile in Embodiment 1.
  • FIG. It is a figure which shows the example of the setting screen for setting the determination condition of the measurement position in Embodiment 1.
  • FIG. It is a graph diagram explaining the example of the method of determining the timing of stopping the supply of a treatment liquid in Embodiment 1. It is a graph which explains the modification of the measurement of the thickness profile in Embodiment 1.
  • FIG. It is a flowchart which shows the example of the substrate processing method in Embodiment 2.
  • It is a schematic diagram explaining the example of the measurement of the thickness profile in Embodiment 2.
  • the upper surface of " or “the lower surface of " in addition to the upper surface of the target component itself, another upper surface of the target component may be used. It shall also include the state in which the components are formed. That is, for example, when the description "B provided on the upper surface of the instep” is described, it does not prevent another component " ⁇ " from intervening between the instep and the second. Further, in the description described below, an expression indicating a shape, for example, “circular shape”, is used to indicate that the shape is strictly the same, and a tolerance or a similar function is provided, unless otherwise specified. It shall include the case where unevenness or chamfering is formed in the obtained range.
  • FIG. 1 is a diagram schematically showing an example of a configuration of a substrate processing apparatus according to the present embodiment. From the viewpoint of making the configuration easier to understand, some components may be omitted or simplified in the drawings.
  • the substrate processing device 1 is a single-wafer processing device that processes disk-shaped substrate WFs such as semiconductor wafers one by one.
  • the substrate processing apparatus 1 performs various processing such as etching processing on the substrate WF.
  • the substrate processing device 1 includes an indexer section 2 and a processing section 3 in this order in the positive direction of the X-axis. Further, the processing section 3 includes a transport module 3A and a processing module 3B in this order in the positive direction of the X-axis.
  • the indexer section 2 receives and processes the substrate container 21 capable of accommodating a plurality of substrate WFs in a laminated state, the stage 22 supporting the substrate container 21, and the unprocessed substrate WF from the substrate container 21. It includes an indexer robot 23 that passes the substrate WF processed in section 3 to the substrate container 21.
  • the number of stages 22 is set to one in the example of FIG. 1 for the sake of simplicity, but a larger number may be arranged in the Y-axis direction.
  • the substrate container 21 may be a front opening unified pod (FOUP) for accommodating the substrate WF in a sealed state, a standard mechanical interface (SMIF) pod, an open cassette (OC), or the like. ..
  • FOUP front opening unified pod
  • SMIF standard mechanical interface
  • OC open cassette
  • the indexer robot 23 includes, for example, a base portion 23A, an articulated arm 23B, and two hands 23C and hands 23D provided at intervals in the vertical direction from each other.
  • the base portion 23A is fixed to, for example, a frame that defines the outer shape of the indexer section 2 of the substrate processing apparatus 1.
  • the articulated arm 23B is configured by rotatably connecting a plurality of arm portions that can rotate along a horizontal plane, and the angle between the arm portions is set at the joint portion that is the connecting portion of the arm portions. By changing the arm portion, the arm portion can be bent and stretched. Further, the base end portion of the articulated arm 23B is rotatably coupled to the base portion 23A around a vertical axis.
  • the articulated arm 23B is movably coupled to the base portion 23A.
  • the hand 23C and the hand 23D are configured to be able to hold one substrate WF, respectively.
  • the indexer robot 23 carries out one unprocessed substrate WF from the substrate container 21 held on the stage 22 by using, for example, the hand 23C. Then, the indexer robot 23 passes the substrate WF from the negative direction of the X-axis to the transfer mechanism 31 (described later) in the transfer module 3A. Further, the indexer robot 23 receives one processed substrate WF from the transport mechanism 31 by using, for example, the hand 23D. Then, the indexer robot 23 accommodates the substrate WF in the substrate container 21 held in the stage 22.
  • the transport module 3A in the processing section 3 includes a transport mechanism 31 capable of transporting one or a plurality of substrate WFs while holding them in a horizontal posture.
  • the transport mechanism 31 may move, for example, in a tubular transport path surrounded by partition walls (not shown here) formed along the XZ plane and the XY plane. Further, the transport mechanism 31 may be guided by a rail extending in the X-axis direction to reciprocate.
  • the transfer mechanism 31 conveys the substrate WF between a position in the negative X-axis direction near the indexer section 2 and a position in the positive X-axis near the transfer robot 33 (described later).
  • the processing module 3B in the processing section 3 includes a transfer robot 33 that transfers the substrate WF, and a plurality of liquid processing units 34A, a liquid treatment unit 34B, and a liquid treatment that perform substrate processing on the unprocessed substrate WF supplied from the transfer mechanism 31. It includes a unit 34C.
  • the transfer robot 33 includes a horizontal drive unit 33A, a vertical drive unit 33B, a hand 33C, a hand 33D, and a support column 33E to which these configurations are attached via a connector 33F and which extends in the vertical direction.
  • the horizontal drive unit 33A moves the hand 33C and the hand 33D in the horizontal direction.
  • the horizontal drive unit 33A includes a stage 133A, a horizontal slider 133B that reciprocates the upper surface of the stage 133A in the horizontal direction, and a horizontal motor 133C that moves the horizontal slider 133B.
  • a rail (not shown here) extending linearly is provided on the upper surface of the stage 133A, and the moving direction of the horizontal slider 133B is regulated by the rail.
  • the movement of the horizontal slider 133B is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.
  • a hand 33C and a hand 33D are provided at the tip of the horizontal slider 133B.
  • the horizontal drive unit 33A moves the hand 33C and the hand 33D in the direction of horizontally separating and approaching from the support column 33E.
  • the horizontal drive unit 33A includes a rotation motor 133D that rotates the stage 133A around the rotation axis Z1 along the vertical direction.
  • the rotation motor 133D allows the hand 33C and the hand 33D to rotate around the rotation axis Z1 within a range that does not interfere with the support column 33E.
  • the vertical drive unit 33B includes a vertical slider 133G and a vertical motor 133H.
  • the vertical slider 133G is engaged with a rail (not shown here) extending in the vertical direction provided on the support column 33E.
  • the vertical motor 133H reciprocates the vertical slider 133G in the vertical direction along the rail.
  • the movement of the vertical slider 133G is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.
  • the connector 33F connects the vertical slider 133G and the stage 133A, and supports the stage 133A from below.
  • the vertical motor 133H moves the vertical slider 133G, so that the stage 133A moves in the vertical direction.
  • the hand 33C and the hand 33D can move up and down in the vertical direction.
  • the horizontal drive unit 33A moves the hand 33C and the hand 33D in parallel with the horizontal direction, and the hand 33C and the hand 33D may be moved in the horizontal and vertical combined directions. That is, "moving in the horizontal direction” means moving in a direction having a horizontal component.
  • the vertical drive unit 33B it is not essential for the vertical drive unit 33B to move the hand 33C and the hand 33D in parallel with the vertical direction, and the hand 33C and the hand 33D may be moved in the vertical and horizontal combined directions. That is, "moving in the vertical direction” means moving in the direction having a component in the vertical direction.
  • the transfer robot 33 carries out one unprocessed substrate WF held by the transfer mechanism 31 by using, for example, the hand 33C. Then, the transfer robot 33 arranges the substrate WF on the upper surface of the spin base 51A (described later) in the liquid processing unit 34A from the negative direction of the X-axis, for example.
  • the transfer robot 33 receives one processed substrate WF from the inside of the liquid treatment unit 34A, the liquid treatment unit 34B, or the liquid treatment unit 34C by using, for example, the hand 33D. Then, the transfer robot 33 passes the substrate WF to the transfer mechanism 31.
  • the liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34C are stacked in this order in the positive direction of the Z axis to form the treatment tower TW.
  • the number of liquid treatment units is set to 3 for the sake of simplicity, but the number may be larger than that.
  • the liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34C are shown to be located in the positive direction of the X axis of the transfer robot 33, but the liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34B are shown.
  • the position where the liquid processing unit 34C is arranged is not limited to this case, and may be arranged in any of the X-axis positive direction, the Y-axis positive direction, and the Y-axis negative direction of the transfer robot 33, for example. ..
  • FIG. 2 is a diagram schematically showing an example of the configuration of the liquid processing unit 34A in the substrate processing apparatus according to the present embodiment.
  • the configurations of the liquid treatment unit 34B and the liquid treatment unit 34C are also the same as in the case where an example is shown in FIG.
  • the liquid treatment unit 34A has a box-shaped processing chamber 50 having an internal space, and a substrate around a vertical rotation axis Z2 passing through the central portion of the substrate WF while holding one substrate WF in a horizontal posture in the processing chamber 50.
  • a spin chuck 51 for rotating the WF and a tubular processing liquid recovery guard 511 surrounding the spin chuck 51 around the rotation axis Z2 of the substrate WF are provided.
  • the processing chamber 50 is surrounded by a box-shaped partition wall 50A.
  • the partition wall 50A is formed with an opening 50B for loading and unloading the substrate WF into the processing chamber 50.
  • the opening 50B is opened and closed by the shutter 50C.
  • the shutter 50C has a closed position (indicated by a two-dot chain line in FIG. 2) that covers the opening 50B and an open position that opens the opening 50B (solid line in FIG. 2) by a shutter elevating mechanism (not shown here). Can be moved up and down with (indicated by).
  • the transfer robot 33 accesses the hands 33C and 33D into the processing chamber 50 through the opening 50B.
  • the untreated substrate WF can be arranged on the upper surface of the spin chuck 51, or the processed substrate WF can be removed from the spin chuck 51.
  • the spin chuck 51 spins by rotating a disk-shaped spin base 51A that evacuates the lower surface of the substrate WF in a horizontal posture, a rotating shaft 51C extending downward from the central portion of the spin base 51A, and a rotating shaft 51C.
  • a spin motor 51D for rotating the substrate WF adsorbed on the base 51A is provided.
  • the spin chuck 51 is not limited to the vacuum suction type chuck shown in FIG. 2, and includes, for example, a plurality of chuck pins protruding upward from the outer peripheral portion of the upper surface of the spin base. It may be a sandwiching type chuck that sandwiches the peripheral edge portion of the substrate WF.
  • the liquid treatment unit 34A includes a treatment liquid nozzle 52 that discharges the treatment liquid toward the upper surface of the substrate WF held by the spin chuck 51, a treatment liquid arm 152 to which the treatment liquid nozzle 52 is attached to the tip, and a treatment liquid arm 152.
  • the treatment liquid tank 53 for storing the treatment liquid supplied to the liquid nozzle 52, the treatment liquid pipe 54 for guiding the treatment liquid in the treatment liquid tank 53 to the treatment liquid nozzle 52, and the treatment liquid in the treatment liquid tank 53 are treated liquids.
  • a liquid feeding device 55 for example, a pump) for sending to the pipe 54 and a processing liquid valve 56 for opening and closing the inside of the processing liquid pipe 54 are provided.
  • the processing liquid arm 152 includes a rotation drive source 152A, a shaft body 152B, and an arm portion 152C having one end fixed to the upper end of the shaft body 152B and a processing liquid nozzle 52 attached to the other end.
  • the shaft body 152B is rotated by the rotation drive source 152A, so that the processing liquid nozzle 52 attached to the tip of the arm portion 152C is held along the upper surface of the substrate WF held by the spin chuck 51. It becomes movable. That is, the processing liquid nozzle 52 attached to the tip of the arm portion 152C can move in the horizontal direction.
  • the drive of the rotary drive source 152A is controlled by a control unit described later.
  • the liquid treatment unit 34A has a circulation pipe 57 connecting the treatment liquid pipe 54 and the treatment liquid tank 53 on the upstream side (that is, the treatment liquid tank 53 side) of the treatment liquid valve 56, and the inside of the circulation pipe 57. It includes a circulation valve 58 that opens and closes, and a temperature control device 59 that adjusts the temperature of the processing liquid flowing through the circulation pipe 57. The opening and closing of the processing liquid valve 56 and the circulation valve 58 is controlled by a control unit described later. When the treatment liquid in the treatment liquid tank 53 is supplied to the treatment liquid nozzle 52, the treatment liquid valve 56 is opened and the circulation valve 58 is closed.
  • the processing liquid sent from the processing liquid tank 53 to the processing liquid pipe 54 by the liquid feeding device 55 is supplied to the processing liquid nozzle 52.
  • the treatment liquid valve 56 is closed and the circulation valve 58 is opened.
  • the processing liquid sent from the processing liquid tank 53 to the processing liquid pipe 54 by the liquid feeding device 55 returns to the inside of the processing liquid tank 53 through the circulation pipe 57. Therefore, while the supply of the treatment liquid to the treatment liquid nozzle 52 is stopped, the treatment liquid continues to circulate in the circulation path composed of the treatment liquid tank 53, the treatment liquid pipe 54, and the circulation pipe 57.
  • the temperature control device 59 adjusts the temperature of the processing liquid flowing in the circulation pipe 57. Therefore, the treatment liquid in the treatment liquid tank 53 is heated in the circulation path while the supply is stopped, and is maintained at a temperature higher than room temperature.
  • the liquid treatment unit 34A includes a rinse liquid nozzle 60 that discharges the rinse liquid toward the upper surface of the substrate WF held by the spin chuck 51, and a rinse liquid arm 160 to which the rinse liquid nozzle 60 is attached to the tip.
  • the rinse liquid pipe 61 that supplies the rinse liquid from the rinse liquid supply source (not shown here) to the rinse liquid nozzle 60, and the supply and stop of the supply and supply of the rinse liquid from the rinse liquid pipe 61 to the rinse liquid nozzle 60.
  • a rinse liquid valve 62 for switching is provided.
  • DIW deionized water
  • the rinse liquid arm 160 includes a rotation drive source 160A, a shaft body 160B, and an arm portion 160C having one end fixed to the upper end of the shaft body 160B and a rinse liquid nozzle 60 attached to the other end.
  • the shaft body 160B is rotated by the rotation drive source 160A, so that the rinse liquid nozzle 60 attached to the tip of the arm portion 160C is along the upper surface of the substrate WF held by the spin chuck 51. It becomes movable. That is, the rinse liquid nozzle 60 attached to the tip of the arm portion 160C can move in the horizontal direction.
  • the drive of the rotary drive source 160A is controlled by a control unit described later. After the treatment liquid is supplied to the substrate WF by the treatment liquid nozzle 52, the rinse liquid is supplied to the substrate WF from the rinse liquid nozzle 60, so that the treatment liquid adhering to the substrate WF can be washed away.
  • the processing liquid recovery guard 511 is provided so as to surround the spin chuck 51.
  • the treatment liquid recovery guard 511 is preferably configured to move up and down in the vertical direction by a motor (not shown). In that case, the upper portion of the processing liquid recovery guard 511 moves up and down between an upper position whose upper end is above the substrate WF held by the spin base 51A and a lower position whose upper end is below the substrate WF. ..
  • the treatment liquid scattered from the upper surface of the substrate WF to the outside is received by the inner side surface of the treatment liquid recovery guard 511. Then, the treatment liquid received by the treatment liquid recovery guard 511 is appropriately discharged to the outside of the treatment chamber 50 through the drainage port 513 provided at the bottom of the treatment chamber 50. It is preferable that at least a part of the treatment liquid discharged from the drain port 513 is reused. In other words, it is preferable that at least a part of the discharged treatment liquid is reused by returning it to the treatment liquid tank 53.
  • the liquid treatment unit 34A includes a sensor 81 for measuring the film thickness of the film provided on the substrate WF, and a measuring arm 181 to which the sensor 81 is attached to the tip.
  • the senor 81 for example, an optical displacement sensor or the like is used.
  • the measurement irradiation wavelength of the light emitted from the sensor 81 to the substrate WF or the like facing the substrate during the measurement is matched with the film to be measured (specifically, the film to be processed 501 which will be described later with reference to FIG. 6).
  • the film thickness of various films for example, silicon film
  • the measurement arm 181 includes a rotation drive source 181A, a shaft body 181B, and an arm portion 181C having one end fixed to the upper end of the shaft body 181B and a sensor 81 attached to the other end.
  • the sensor 81 attached to the tip of the arm portion 181C can move along the upper surface of the substrate WF held by the spin chuck 51. That is, the sensor 81 attached to the tip of the arm portion 181C can move in the horizontal direction.
  • the drive of the rotary drive source 181A is controlled by a control unit described later.
  • the measuring arm 181 is located at least farther from the upper surface of the substrate WF than the processing liquid arm 152 or the rinsing liquid arm 160. That is, the vertical height H1 of the measuring arm 181 (the length from the upper surface of the spin base 51A to the arm portion 181C or the sensor 81) is the vertical height H2 of the processing liquid arm 152 (from the upper surface of the spin base 51A). It is higher than the height H3 in the vertical direction of the arm portion 152C or the treatment liquid nozzle 52) or the rinse liquid arm 160 (the length from the upper surface of the spin base 51A to the arm portion 160C or the rinse liquid nozzle 60).
  • the measuring arm 181 Since the measuring arm 181 is located away from the upper surface of the substrate WF in this way, when the processing liquid or the like is discharged to the upper surface of the substrate WF, the rebounded liquid or the like adheres to the sensor 81. It can be suppressed. As shown in the example of FIG. 2, the measuring arm 181 may be located farther from the upper surface of the spin base 51A than both the processing liquid arm 152 and the rinsing liquid arm 160.
  • FIG. 3 is a plan view showing an example of the position of each arm in the liquid treatment unit 34A.
  • the processing liquid arm 152, the rinsing liquid arm 160, and the measuring arm 181 are each movable in the radial direction of the spin base 51A (at least, the direction having the radial component), and the upper surface of the substrate WF rotating in the spin chuck 51. Can be scanned.
  • FIG. 4 is a functional block diagram showing an example of the connection relationship between the control unit 7 and each of the other elements in the substrate processing device 1 (FIG. 1).
  • the control unit 7 is a driving unit (for example, a processing liquid valve 56, a circulation valve 58, a rinse liquid valve 62, a shutter 50C, a spin motor 51D, etc.) and a driving unit for driving the transfer mechanism 31 of each liquid processing unit (for example, A motor for reciprocating movement of the transfer mechanism 31), an operating part of the indexer robot 23 (for example, a motor for driving the articulated arm 23B), an operating part of the transfer robot 33 (for example, a horizontal motor 133C, rotation). It is connected to a motor 133D or a vertical motor 133H, etc.) and controls their operation.
  • a driving unit for example, a processing liquid valve 56, a circulation valve 58, a rinse liquid valve 62, a shutter 50C, a spin motor 51D, etc.
  • the hardware configuration of the control unit 7 is the same as that of a general computer. That is, the control unit 7 has a central processing unit (CPU) 71 that performs various arithmetic processes and a read-only memory (read only memory, that is, ROM) that is a read-only memory that stores a basic program. ) 72, a random access memory (RAM) 73 which is a readable and writable memory for storing various information, and a non-transient storage unit 74 for storing a control application (program) or data. And.
  • the CPU 71, ROM 72, RAM 73, and storage unit 74 are connected to each other by bus wiring 75 or the like.
  • the control application or data may be provided to the control unit 7 in a state of being recorded on a non-transient recording medium (for example, a semiconductor memory, an optical medium, a magnetic medium, or the like).
  • a reading device for reading the control application or data from the recording medium is connected to the bus wiring 75.
  • the control application or data may be provided to the control unit 7 from a server or the like via a network.
  • the communication unit that performs network communication with the external device is connected to the bus wiring 75.
  • the input unit 76 and the display unit 77 are connected to the bus wiring 75.
  • the input unit 76 includes various input devices such as a keyboard and a mouse.
  • the operator inputs various information to the control unit 7 via the input unit 76.
  • the display unit 77 is composed of a display device such as a liquid crystal monitor, and displays various information.
  • FIG. 5 is a plan view schematically showing an example of the configuration of the substrate WF to be processed by the substrate processing method.
  • the substrate processing method of the present embodiment processes at least one substrate WF, and preferably, a plurality of substrate WFs are sequentially processed by each liquid processing unit such as the liquid processing unit 34A described above.
  • Each of the substrate WFs has a circular shape having a radius R in the radial direction. Further, each of the substrate WFs has a plurality of chip regions RS.
  • This substrate processing method is performed by the substrate processing apparatus 1 (FIG. 1). Specifically, in this substrate processing method, the substrate WF housed in the substrate container 21 (FIG. 1) is carried into one of the liquid processing units via the indexer robot 23, the transfer mechanism 31, and the transfer robot 33. Further, it is performed in a state of being held by the spin chuck 51 (FIG. 2).
  • FIG. 7 and 8 are sequence diagrams and flowcharts showing an example of the substrate processing method according to the first embodiment.
  • the thickness profile of the film 501 to be processed in the radial direction is measured (FIG. 8: step ST21). Specifically, the thickness profile is measured by scanning the sensor 81 in the radial direction while rotating the substrate WF. The scan of the sensor 81 is performed by rotating the arm unit 181C of the measurement arm 181 under the control of the control unit 7.
  • FIG. 9 is a schematic diagram illustrating an example of step ST21.
  • the scan SC of the sensor 81 provides a profile of thickness d for the radial position r. If the speed of the scan SC is sufficiently slower than the rotation speed of the substrate WF, a thickness profile that depends on the radial direction can be uniquely obtained.
  • the number of measurement positions is any one or more.
  • the thickness of each measurement position is monitored by appropriately moving the sensor 81 in the monitoring of the temporal change of the thickness, which will be described later.
  • the representative thickness calculated based on the thicknesses at the plurality of measurement positions may be regarded as the thickness at the measurement positions.
  • the representative thickness is, for example, the average of the thicknesses at a plurality of measurement positions.
  • the position of the sensor 81 may be fixed at the measurement position in the monitor of the temporal change of the thickness, which will be described later, or the measurement is performed between the intermittent monitors at the measurement position. It may be out of position.

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Abstract

A substrate (WF) has a plurality of chip regions (RS) provided with a structure that becomes a power device, and is provided with a membrane to be processed (501). By scanning a sensor (81) in the radial direction while rotating the substrate (WF), the thickness profile of the membrane to be processed (501) is measured in the radial direction. The average thickness (davg) of the thickness profile is calculated. At least one radial direction position in which the thickness profile has average thickness (davg) is extracted as at least one candidate position. At least one of the at least one candidate positions is determined as at least one measurement position. A processing liquid is supplied from a nozzle (52) onto the membrane to be processed (501) of the substrate (WF) while rotating the substrate (WF). The change over time of the thickness of the membrane to be processed (501) is monitored at least at one measurement position by the sensor (81) while rotating the substrate (WF).

Description

基板処理方法Board processing method
　本発明は、基板処理方法に関し、特に、処理液を用いた基板処理方法に関するものである。 The present invention relates to a substrate processing method, and more particularly to a substrate processing method using a processing liquid.
　従来より、半導体基板（以下、単に「基板」と称する）の製造工程では、基板処理装置を用いて基板に対して様々な処理が行わる。例えば、基板の上面に形成された膜を処理液を用いて除去するエッチング処理が行われる。特開２００３－９７９１９号公報（特許文献１）によれば、エッチング液をウエハの表面に供給してその表面の薄膜を膜厚途中までエッチングする過程で、当該薄膜の膜厚がリアルタイムで検出される。そして、当該膜厚検出値が目標膜厚に達した時点で、エッチングが停止される。これによって、目標膜厚に高精度に制御された薄膜をウエハ表面に残すことが意図されている。 Conventionally, in the manufacturing process of a semiconductor substrate (hereinafter, simply referred to as "substrate"), various processing is performed on the substrate by using a substrate processing apparatus. For example, an etching process is performed in which the film formed on the upper surface of the substrate is removed using a treatment liquid. According to Japanese Patent Application Laid-Open No. 2003-97919 (Patent Document 1), the film thickness of the thin film is detected in real time in the process of supplying the etching solution to the surface of the wafer and etching the thin film on the surface halfway. Etching. Then, when the film thickness detection value reaches the target film thickness, the etching is stopped. As a result, it is intended to leave a thin film whose target film thickness is controlled with high accuracy on the wafer surface.
特開２００３－９７９１９号公報Japanese Unexamined Patent Publication No. 2003-97919
　プロセスばらつき等に起因して、基板処理における被処理膜の厚みは、基板上のどの位置においても同じというわけではない。上記公報に記載の基板処理はこの点を考慮していないので、当該基板処理を含む製造方法によって製造されたデバイスの性能が不十分となることがある。別な観点で言えば、十分な性能を有する半導体デバイスの製造歩留まりが低くなることがある。 Due to process variation, etc., the thickness of the film to be treated in the substrate treatment is not the same at every position on the substrate. Since the substrate treatment described in the above publication does not take this point into consideration, the performance of the device manufactured by the manufacturing method including the substrate treatment may be insufficient. From another point of view, the manufacturing yield of a semiconductor device having sufficient performance may be low.
　本発明は、以上に記載されたような問題を鑑みてなされたものであり、十分な性能を有する半導体デバイスの製造に適した基板処理方法を提供することを目的とするものである。 The present invention has been made in view of the problems described above, and an object of the present invention is to provide a substrate processing method suitable for manufacturing a semiconductor device having sufficient performance.
　本発明の一の態様に従う基板処理方法は、径方向を有し、パワーデバイスとなる構造が設けられた複数のチップ領域を有し、被処理膜が設けられた少なくとも１つの基板を処理する基板処理方法であって、
　（ａ）　前記基板を回転させながら、前記径方向においてセンサをスキャンさせることによって、前記径方向における前記被処理膜の厚みプロファイルを測定する工程と、
　（ｂ）　前記厚みプロファイルの平均厚みを算出する工程と、
　（ｃ）　前記厚みプロファイルが前記平均厚みを有する少なくとも１つの径方向位置を、少なくとも１つの候補位置として抽出する工程と、
　（ｄ）　前記少なくとも１つの候補位置の少なくともいずれかを、少なくとも１つの測定位置に決定する工程と、
　（ｅ）　前記基板を回転させながら、前記基板の前記被処理膜上へノズルから処理液を供給する工程と、
　（ｆ）　前記基板を回転させながら、前記センサによって前記少なくとも１つの測定位置で前記被処理膜の厚みの時間的変化をモニタする工程と、
を備える。 The substrate processing method according to one aspect of the present invention is a substrate that has a radial direction, has a plurality of chip regions provided with a structure serving as a power device, and processes at least one substrate provided with a film to be processed. It ’s a processing method,
(A) A step of measuring the thickness profile of the film to be processed in the radial direction by scanning the sensor in the radial direction while rotating the substrate.
(B) A step of calculating the average thickness of the thickness profile and
(C) A step of extracting at least one radial position in which the thickness profile has the average thickness as at least one candidate position.
(D) A step of determining at least one of the at least one candidate position as at least one measurement position, and
(E) A step of supplying a processing liquid from a nozzle onto the film to be processed on the substrate while rotating the substrate.
(F) A step of monitoring the temporal change in the thickness of the film to be processed by the sensor at at least one measurement position while rotating the substrate.
To be equipped.
　本発明の他の態様に従う基板処理方法は、径方向を有し、非パワーデバイスである半導体デバイスとなる構造が設けられた複数のチップ領域を有し、被処理膜が設けられた少なくとも１つの基板を処理する基板処理方法であって、
　（ａ）　前記基板を回転させながら、前記径方向においてセンサをスキャンさせることによって、前記径方向における前記被処理膜の厚みプロファイルを測定する工程と、
　（ｂ）　前記厚みプロファイルの最小厚みを算出する工程と、
　（ｃ）　前記厚みプロファイルが前記最小厚みを有する少なくとも１つの径方向位置を、少なくとも１つの候補位置として抽出する工程と、
　（ｄ）　前記少なくとも１つの候補位置の少なくともいずれかを、少なくとも１つの測定位置に決定する工程と、
　（ｅ）　前記基板を回転させながら、前記基板の前記被処理膜上へノズルから処理液を供給する工程と、
　（ｆ）　前記基板を回転させながら、前記センサによって前記少なくとも１つの測定位置で前記被処理膜の厚みの時間的変化をモニタする工程と、
を備える。 A substrate processing method according to another aspect of the present invention has at least one chip region having a radial direction, a structure for becoming a semiconductor device which is a non-power device, and a film to be processed. It is a substrate processing method for processing a substrate.
(A) A step of measuring the thickness profile of the film to be processed in the radial direction by scanning the sensor in the radial direction while rotating the substrate.
(B) A step of calculating the minimum thickness of the thickness profile and
(C) A step of extracting at least one radial position in which the thickness profile has the minimum thickness as at least one candidate position.
(D) A step of determining at least one of the at least one candidate position as at least one measurement position, and
(E) A step of supplying a processing liquid from a nozzle onto the film to be processed on the substrate while rotating the substrate.
(F) A step of monitoring the temporal change in the thickness of the film to be processed by the sensor at at least one measurement position while rotating the substrate.
To be equipped.
　一の態様の基板処理方法によれば、被処理膜の平均厚みを精度よく制御することができる。これにより被処理膜の厚みを過不足のないものとすることができる。よって、被処理膜の厚み方向に沿った電流経路を有するパワーデバイスにおいて、過大な厚みに起因して電気抵抗が過大となることを避け、かつ、過小な厚みに起因して耐電圧が不足することが避けることができる。 According to the substrate processing method of one aspect, the average thickness of the film to be processed can be controlled with high accuracy. As a result, the thickness of the film to be treated can be made to be just right. Therefore, in a power device having a current path along the thickness direction of the film to be treated, it is possible to avoid excessive electrical resistance due to excessive thickness and insufficient withstand voltage due to excessive thickness. Can be avoided.
　他の態様の基板処理方法によれば、被処理膜の最小厚みを精度よく制御することができる。これにより基板処理が過度に進行することが防止される。よって、被処理膜に覆われていた箇所が意図せず侵食されてしまうことに起因しての、半導体デバイスの特性への悪影響を避けることができる。 According to the substrate processing method of another aspect, the minimum thickness of the film to be processed can be controlled with high accuracy. This prevents the substrate processing from proceeding excessively. Therefore, it is possible to avoid adverse effects on the characteristics of the semiconductor device due to unintentional erosion of the portion covered with the film to be treated.
　本願明細書に開示される技術に関連する目的と、特徴と、局面と、利点とは、以下に示される詳細な説明と添付図面とによって、さらに明白となる。 The objectives, features, aspects, and advantages associated with the technology disclosed herein will be further clarified by the detailed description and accompanying drawings presented below.
実施の形態１における基板処理装置の構成の例を概略的に示す図である。It is a figure which shows typically the example of the structure of the substrate processing apparatus in Embodiment 1. FIG. 図１の液処理ユニットの構成の例を概略的に示す図である。It is a figure which shows schematic example of the structure of the liquid processing unit of FIG. 図２の液処理ユニットの主要部の平面図である。It is a top view of the main part of the liquid processing unit of FIG. 図１の基板処理装置の各要素と制御部との接続関係の例を示す機能ブロック図である。It is a functional block diagram which shows an example of the connection relationship between each element of the substrate processing apparatus of FIG. 1 and a control part. 基板処理方法によって処理されることになる基板の構成の例を概略的に示す平面図である。It is a top view which shows typically the example of the structure of the substrate to be processed by the substrate processing method. 図５の線ＶＩ－ＶＩに沿う概略的な部分断面図である。FIG. 5 is a schematic partial cross-sectional view taken along the line VI-VI of FIG. 実施の形態１における基板処理方法の例を示すシーケンス図である。It is a sequence diagram which shows the example of the substrate processing method in Embodiment 1. FIG. 図７に対応するフローチャートである。It is a flowchart corresponding to FIG. 7. 実施の形態１における厚みプロファイルの測定の例を説明する模式図である。It is a schematic diagram explaining the example of the measurement of the thickness profile in Embodiment 1. FIG. 実施の形態１における測定位置の決定条件を設定するための設定画面の例を示す図である。It is a figure which shows the example of the setting screen for setting the determination condition of the measurement position in Embodiment 1. FIG. 実施の形態１における処理液の供給の停止のタイミングを決定する方法の例について説明するグラフ図である。It is a graph diagram explaining the example of the method of determining the timing of stopping the supply of a treatment liquid in Embodiment 1. 実施の形態１における厚みプロファイルの測定の変形例を説明するグラフ図である。It is a graph which explains the modification of the measurement of the thickness profile in Embodiment 1. FIG. 実施の形態２における基板処理方法の例を示すフローチャートである。It is a flowchart which shows the example of the substrate processing method in Embodiment 2. 実施の形態２における厚みプロファイルの測定の例を説明する模式図である。It is a schematic diagram explaining the example of the measurement of the thickness profile in Embodiment 2. 図７の変形例を示すシーケンス図である。It is a sequence diagram which shows the modification of FIG.
　以下、添付される図面を参照しながら実施の形態について説明する。以下の実施の形態では、技術の説明のために詳細な特徴なども示されるが、それらは例示であり、実施の形態が実施可能となるためにそれらすべてが必ずしも必須の特徴ではない。なお、図面は概略的に示されるものであり、説明の便宜のため、適宜、構成の省略、または、構成の簡略化が図面においてなされるものである。また、シーケンス図における時間幅は、実際の時間幅を厳密に示すものではない。また、異なる図面にそれぞれ示される構成などの大きさおよび位置の相互関係は、必ずしも正確に記載されるものではなく、適宜変更され得るものである。また、以下に示される説明では、同様の構成要素には同じ符号を付して図示し、それらの名称と機能とについても同様のものとする。したがって、それらについての詳細な説明を、重複を避けるために省略する場合がある。また、以下に記載される説明において、ある構成要素を「備える」、「含む」または「有する」などと記載される場合、特に断らない限りは、他の構成要素の存在を除外する排他的な表現ではない。また、以下に記載される説明における、相対的または絶対的な位置関係を示す表現、例えば、「一方向に」、「一方向に沿って」、「平行」、「直交」、「中心」、「同心」または「同軸」などは、特に断らない限りは、その位置関係を厳密に示す場合、および、公差または同程度の機能が得られる範囲において角度または距離が変位している場合を含むものとする。また、以下に記載される説明において、等しい状態であることを示す表現、例えば、「同一」、「等しい」、「均一」または「均質」などは、特に断らない限りは、厳密に等しい状態であることを示す場合、および、公差または同程度の機能が得られる範囲において差が生じている場合を含むものとする。また、以下に記載される説明における、「対象物を特定の方向に移動させる」などの表現は、特に断らない限りは、対象物を当該特定の方向と平行に移動させる場合、および、対象物を当該特定の方向の成分を有する方向に移動させる場合を含むものとする。また、以下に記載される説明において、「…の上面」または「…の下面」などと記載される場合、対象となる構成要素の上面自体に加えて、対象となる構成要素の上面に他の構成要素が形成された状態も含むものとする。すなわち、例えば、「甲の上面に設けられる乙」と記載される場合、甲と乙との間に別の構成要素「丙」が介在することを妨げるものではない。また、以下に記載される説明において、形状を示す表現、例えば、「円形形状」などは、特に断らない限りは、厳密にその形状であることを示す場合、および、公差または同程度の機能が得られる範囲において凹凸または面取りなどが形成されている場合を含むものとする。 Hereinafter, embodiments will be described with reference to the attached drawings. In the following embodiments, detailed features and the like are also shown for the purpose of explaining the technique, but they are examples, and not all of them are necessarily essential features in order for the embodiments to be feasible. It should be noted that the drawings are shown schematically, and for convenience of explanation, the configurations are omitted or the configurations are simplified in the drawings as appropriate. Further, the time width in the sequence diagram does not strictly indicate the actual time width. Further, the interrelationship between the sizes and positions of the configurations and the like shown in different drawings is not always accurately described and can be changed as appropriate. Further, in the description shown below, similar components are illustrated with the same reference numerals, and their names and functions are also the same. Therefore, detailed description of them may be omitted to avoid duplication. Further, in the description described below, when it is described that a certain component is "equipped", "included", or "has", the existence of another component is excluded unless otherwise specified. Not an expression. Also, in the description described below, expressions indicating relative or absolute positional relationships, for example, "in one direction", "along one direction", "parallel", "orthogonal", "center", Unless otherwise specified, "concentric" or "coaxial" shall include cases where the positional relationship is strictly indicated, and cases where the angle or distance is displaced within the range where tolerance or similar function can be obtained. .. Further, in the description described below, expressions indicating equality, for example, "same", "equal", "uniform" or "homogeneous", are strictly equal unless otherwise specified. It shall include the case where it indicates that there is, and the case where there is a difference within the range where tolerance or similar function can be obtained. In addition, in the description described below, expressions such as "moving an object in a specific direction" are used when the object is moved in parallel with the specific direction and the object is not specified unless otherwise specified. Shall include the case of moving in the direction having the component in the specific direction. Further, in the description described below, when "the upper surface of ..." or "the lower surface of ..." is described, in addition to the upper surface of the target component itself, another upper surface of the target component may be used. It shall also include the state in which the components are formed. That is, for example, when the description "B provided on the upper surface of the instep" is described, it does not prevent another component "丙" from intervening between the instep and the second. Further, in the description described below, an expression indicating a shape, for example, "circular shape", is used to indicate that the shape is strictly the same, and a tolerance or a similar function is provided, unless otherwise specified. It shall include the case where unevenness or chamfering is formed in the obtained range.
　＜実施の形態１＞
　図１は、本実施の形態に関する基板処理装置の構成の例を概略的に示す図である。なお、構成を理解しやすくする観点から、当該図面においては、一部の構成要素が省略、または、簡略化されて示される場合がある。 <Embodiment 1>
FIG. 1 is a diagram schematically showing an example of a configuration of a substrate processing apparatus according to the present embodiment. From the viewpoint of making the configuration easier to understand, some components may be omitted or simplified in the drawings.
　基板処理装置１は、半導体ウエハなどの円板状の基板ＷＦを１枚ずつ処理する枚葉式の処理装置である。基板処理装置１は、基板ＷＦに対してエッチング処理などの各種処理を行う。基板処理装置１は、Ｘ軸正方向に向かって順に、インデクサセクション２と、処理セクション３とを備える。また、処理セクション３は、Ｘ軸正方向に向かって順に、搬送モジュール３Ａと、処理モジュール３Ｂとを備える。 The substrate processing device 1 is a single-wafer processing device that processes disk-shaped substrate WFs such as semiconductor wafers one by one. The substrate processing apparatus 1 performs various processing such as etching processing on the substrate WF. The substrate processing device 1 includes an indexer section 2 and a processing section 3 in this order in the positive direction of the X-axis. Further, the processing section 3 includes a transport module 3A and a processing module 3B in this order in the positive direction of the X-axis.
　インデクサセクション２は、複数枚の基板ＷＦを積層状態で収容可能な基板収容器２１と、基板収容器２１を支持するステージ２２と、基板収容器２１から未処理の基板ＷＦを受け取り、また、処理セクション３において処理が完了した基板ＷＦを基板収容器２１へ渡すインデクサロボット２３とを備える。なお、ステージ２２の数は、図１の例では簡単のため１つとされたが、それ以上の数がＹ軸方向に並べられていてもよい。基板収容器２１は、基板ＷＦを密閉状態で収納するｆｒｏｎｔ　ｏｐｅｎｉｎｇ　ｕｎｉｆｉｅｄ　ｐｏｄ（ＦＯＵＰ）であってもよいし、ｓｔａｎｄａｒｄ　ｍｅｃｈａｎｉｃａｌ　ｉｎｔｅｒ　ｆａｃｅ（ＳＭＩＦ）ポッド、または、ｏｐｅｎ　ｃａｓｓｅｔｔｅ（ＯＣ）などであってもよい。インデクサロボット２３は、例えば、基台部２３Ａと、多関節アーム２３Ｂと、互いに鉛直方向に間隔をあけて設けられる２つのハンド２３Ｃおよびハンド２３Ｄとを備える。基台部２３Ａは、例えば、基板処理装置１のインデクサセクション２の外形を規定するフレームに固定されている。多関節アーム２３Ｂは、水平面に沿って回動可能な複数本のアーム部が互いに回動可能に結合されて構成されており、当該アーム部の結合箇所である関節部でアーム部間の角度を変更することによって、当該アーム部が屈伸可能に構成されている。また、多関節アーム２３Ｂの基端部は、基台部２３Ａに対して、鉛直軸回りに回動可能に結合されている。さらに、多関節アーム２３Ｂは、基台部２３Ａに対して昇降可能に結合されている。ハンド２３Ｃおよびハンド２３Ｄは、１枚の基板ＷＦをそれぞれ保持可能に構成されている。インデクサロボット２３は、ステージ２２に保持された基板収容器２１から１枚の未処理の基板ＷＦを、例えばハンド２３Ｃを用いて搬出する。そして、インデクサロボット２３は、Ｘ軸負方向から搬送モジュール３Ａにおける搬送機構３１（後述）に当該基板ＷＦを渡す。さらに、インデクサロボット２３は、搬送機構３１から１枚の処理済みの基板ＷＦを、例えばハンド２３Ｄを用いて受け取る。そして、インデクサロボット２３は、ステージ２２に保持された基板収容器２１に当該基板ＷＦを収容する。 The indexer section 2 receives and processes the substrate container 21 capable of accommodating a plurality of substrate WFs in a laminated state, the stage 22 supporting the substrate container 21, and the unprocessed substrate WF from the substrate container 21. It includes an indexer robot 23 that passes the substrate WF processed in section 3 to the substrate container 21. The number of stages 22 is set to one in the example of FIG. 1 for the sake of simplicity, but a larger number may be arranged in the Y-axis direction. The substrate container 21 may be a front opening unified pod (FOUP) for accommodating the substrate WF in a sealed state, a standard mechanical interface (SMIF) pod, an open cassette (OC), or the like. .. The indexer robot 23 includes, for example, a base portion 23A, an articulated arm 23B, and two hands 23C and hands 23D provided at intervals in the vertical direction from each other. The base portion 23A is fixed to, for example, a frame that defines the outer shape of the indexer section 2 of the substrate processing apparatus 1. The articulated arm 23B is configured by rotatably connecting a plurality of arm portions that can rotate along a horizontal plane, and the angle between the arm portions is set at the joint portion that is the connecting portion of the arm portions. By changing the arm portion, the arm portion can be bent and stretched. Further, the base end portion of the articulated arm 23B is rotatably coupled to the base portion 23A around a vertical axis. Further, the articulated arm 23B is movably coupled to the base portion 23A. The hand 23C and the hand 23D are configured to be able to hold one substrate WF, respectively. The indexer robot 23 carries out one unprocessed substrate WF from the substrate container 21 held on the stage 22 by using, for example, the hand 23C. Then, the indexer robot 23 passes the substrate WF from the negative direction of the X-axis to the transfer mechanism 31 (described later) in the transfer module 3A. Further, the indexer robot 23 receives one processed substrate WF from the transport mechanism 31 by using, for example, the hand 23D. Then, the indexer robot 23 accommodates the substrate WF in the substrate container 21 held in the stage 22.
　処理セクション３における搬送モジュール３Ａは、１または複数枚の基板ＷＦを水平姿勢に保持しつつ搬送可能な搬送機構３１を備える。搬送機構３１は、例えば、ＸＺ平面およびＸＹ平面に沿って形成される隔壁（ここでは、図示しない）によって囲まれた筒状の搬送路を移動するものであってもよい。また、搬送機構３１は、Ｘ軸方向に延びるレールに案内されて往復移動するものであってもよい。搬送機構３１によって、基板ＷＦは、インデクサセクション２に近いＸ軸負方向の位置と、搬送ロボット３３（後述）に近いＸ軸正方向の位置との間で搬送される。 The transport module 3A in the processing section 3 includes a transport mechanism 31 capable of transporting one or a plurality of substrate WFs while holding them in a horizontal posture. The transport mechanism 31 may move, for example, in a tubular transport path surrounded by partition walls (not shown here) formed along the XZ plane and the XY plane. Further, the transport mechanism 31 may be guided by a rail extending in the X-axis direction to reciprocate. The transfer mechanism 31 conveys the substrate WF between a position in the negative X-axis direction near the indexer section 2 and a position in the positive X-axis near the transfer robot 33 (described later).
　処理セクション３における処理モジュール３Ｂは、基板ＷＦを搬送する搬送ロボット３３と、搬送機構３１から供給される未処理の基板ＷＦに基板処理を行う複数の液処理ユニット３４Ａ、液処理ユニット３４Ｂおよび液処理ユニット３４Ｃとを備える。搬送ロボット３３は、水平駆動部３３Ａと、鉛直駆動部３３Ｂと、ハンド３３Ｃと、ハンド３３Ｄと、これらの構成が連結具３３Ｆを介して取り付けられ、かつ、鉛直方向に延びる支柱３３Ｅとを備える。 The processing module 3B in the processing section 3 includes a transfer robot 33 that transfers the substrate WF, and a plurality of liquid processing units 34A, a liquid treatment unit 34B, and a liquid treatment that perform substrate processing on the unprocessed substrate WF supplied from the transfer mechanism 31. It includes a unit 34C. The transfer robot 33 includes a horizontal drive unit 33A, a vertical drive unit 33B, a hand 33C, a hand 33D, and a support column 33E to which these configurations are attached via a connector 33F and which extends in the vertical direction.
　水平駆動部３３Ａは、ハンド３３Ｃおよびハンド３３Ｄを水平方向に移動させる。水平駆動部３３Ａは、ステージ１３３Ａと、ステージ１３３Ａの上面を水平方向に往復移動する水平スライダ１３３Ｂと、水平スライダ１３３Ｂを移動させる水平モータ１３３Ｃとを備える。ステージ１３３Ａの上面には直線状に延びるレール（ここでは、図示せず）が設けられており、水平スライダ１３３Ｂの移動方向が当該レールによって規制される。水平スライダ１３３Ｂの移動は、例えば、リニアモータ機構またはボールネジ機構などの周知の機構によって実現される。水平スライダ１３３Ｂの先端には、ハンド３３Ｃおよびハンド３３Ｄが設けられている。水平モータ１３３Ｃによって水平スライダ１３３Ｂがレールに沿って移動すると、ハンド３３Ｃおよびハンド３３Ｄは水平方向に進退移動可能となる。換言すると、水平駆動部３３Ａは、ハンド３３Ｃおよびハンド３３Ｄを支柱３３Ｅから水平方向に離間および接近する方向に移動させる。水平駆動部３３Ａは、ステージ１３３Ａを鉛直方向に沿う回動軸線Ｚ１まわりに回動させる回動モータ１３３Ｄを備える。回動モータ１３３Ｄによって、ハンド３３Ｃおよびハンド３３Ｄは、回動軸線Ｚ１まわりに、支柱３３Ｅに干渉しない範囲で回動することができる。 The horizontal drive unit 33A moves the hand 33C and the hand 33D in the horizontal direction. The horizontal drive unit 33A includes a stage 133A, a horizontal slider 133B that reciprocates the upper surface of the stage 133A in the horizontal direction, and a horizontal motor 133C that moves the horizontal slider 133B. A rail (not shown here) extending linearly is provided on the upper surface of the stage 133A, and the moving direction of the horizontal slider 133B is regulated by the rail. The movement of the horizontal slider 133B is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism. A hand 33C and a hand 33D are provided at the tip of the horizontal slider 133B. When the horizontal slider 133B is moved along the rail by the horizontal motor 133C, the hand 33C and the hand 33D can move forward and backward in the horizontal direction. In other words, the horizontal drive unit 33A moves the hand 33C and the hand 33D in the direction of horizontally separating and approaching from the support column 33E. The horizontal drive unit 33A includes a rotation motor 133D that rotates the stage 133A around the rotation axis Z1 along the vertical direction. The rotation motor 133D allows the hand 33C and the hand 33D to rotate around the rotation axis Z1 within a range that does not interfere with the support column 33E.
　鉛直駆動部３３Ｂは、鉛直スライダ１３３Ｇと、鉛直モータ１３３Ｈとを備える。鉛直スライダ１３３Ｇは、支柱３３Ｅに設けられた鉛直方向に延びるレール（ここでは、図示せず）に係合している。鉛直モータ１３３Ｈは、鉛直スライダ１３３Ｇを当該レールに沿って鉛直方向に往復移動させる。鉛直スライダ１３３Ｇの移動は、例えば、リニアモータ機構またはボールネジ機構などの周知の機構で実現される。 The vertical drive unit 33B includes a vertical slider 133G and a vertical motor 133H. The vertical slider 133G is engaged with a rail (not shown here) extending in the vertical direction provided on the support column 33E. The vertical motor 133H reciprocates the vertical slider 133G in the vertical direction along the rail. The movement of the vertical slider 133G is realized by a well-known mechanism such as a linear motor mechanism or a ball screw mechanism.
　連結具３３Ｆは、鉛直スライダ１３３Ｇおよびステージ１３３Ａを連結し、かつ、ステージ１３３Ａを下方から支持している。鉛直モータ１３３Ｈが鉛直スライダ１３３Ｇを移動させることによって、ステージ１３３Ａが鉛直方向に移動する。これによって、ハンド３３Ｃおよびハンド３３Ｄが鉛直方向に昇降移動することができる。 The connector 33F connects the vertical slider 133G and the stage 133A, and supports the stage 133A from below. The vertical motor 133H moves the vertical slider 133G, so that the stage 133A moves in the vertical direction. As a result, the hand 33C and the hand 33D can move up and down in the vertical direction.
　なお、水平駆動部３３Ａがハンド３３Ｃおよびハンド３３Ｄを水平方向と平行に移動させることは必須ではなく、ハンド３３Ｃおよびハンド３３Ｄを、水平方向および鉛直方向の合成方向に移動させてもよい。すなわち、「水平方向に移動させる」とは、水平方向の成分を持つ方向に移動させることをいう。同様に、鉛直駆動部３３Ｂがハンド３３Ｃおよびハンド３３Ｄを鉛直方向と平行に移動させることは必須ではなく、ハンド３３Ｃおよびハンド３３Ｄを、鉛直方向および水平方向の合成方向に移動させてもよい。すなわち、「鉛直方向に移動させる」とは、鉛直方向の成分を持つ方向に移動させることをいう。 It is not essential that the horizontal drive unit 33A moves the hand 33C and the hand 33D in parallel with the horizontal direction, and the hand 33C and the hand 33D may be moved in the horizontal and vertical combined directions. That is, "moving in the horizontal direction" means moving in a direction having a horizontal component. Similarly, it is not essential for the vertical drive unit 33B to move the hand 33C and the hand 33D in parallel with the vertical direction, and the hand 33C and the hand 33D may be moved in the vertical and horizontal combined directions. That is, "moving in the vertical direction" means moving in the direction having a component in the vertical direction.
　搬送ロボット３３は、搬送機構３１に保持された１枚の未処理の基板ＷＦを、例えばハンド３３Ｃを用いて搬出する。そして、搬送ロボット３３は、例えば、Ｘ軸負方向から液処理ユニット３４Ａにおけるスピンベース５１Ａ（後述）の上面に当該基板ＷＦを配置する。 The transfer robot 33 carries out one unprocessed substrate WF held by the transfer mechanism 31 by using, for example, the hand 33C. Then, the transfer robot 33 arranges the substrate WF on the upper surface of the spin base 51A (described later) in the liquid processing unit 34A from the negative direction of the X-axis, for example.
　また、搬送ロボット３３は、液処理ユニット３４Ａ内、液処理ユニット３４Ｂ内または液処理ユニット３４Ｃ内から１枚の処理済みの基板ＷＦを、例えばハンド３３Ｄを用いて受け取る。そして、搬送ロボット３３は、搬送機構３１に当該基板ＷＦを渡す。 Further, the transfer robot 33 receives one processed substrate WF from the inside of the liquid treatment unit 34A, the liquid treatment unit 34B, or the liquid treatment unit 34C by using, for example, the hand 33D. Then, the transfer robot 33 passes the substrate WF to the transfer mechanism 31.
　液処理ユニット３４Ａ、液処理ユニット３４Ｂおよび液処理ユニット３４Ｃは、Ｚ軸正方向に順に重ねられており、処理タワーＴＷを構成する。なお、液処理ユニットの数は、図１の例では簡単のため３つとされたが、それ以上の数であってもよい。また、図１においては、液処理ユニット３４Ａ、液処理ユニット３４Ｂおよび液処理ユニット３４Ｃは搬送ロボット３３のＸ軸正方向に位置するように示されているが、液処理ユニット３４Ａ、液処理ユニット３４Ｂおよび液処理ユニット３４Ｃが配置される位置はこの場合に限られるものではなく、例えば、搬送ロボット３３のＸ軸正方向、Ｙ軸正方向またはＹ軸負方向のいずれかに配置されていてもよい。 The liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34C are stacked in this order in the positive direction of the Z axis to form the treatment tower TW. In the example of FIG. 1, the number of liquid treatment units is set to 3 for the sake of simplicity, but the number may be larger than that. Further, in FIG. 1, the liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34C are shown to be located in the positive direction of the X axis of the transfer robot 33, but the liquid treatment unit 34A, the liquid treatment unit 34B, and the liquid treatment unit 34B are shown. The position where the liquid processing unit 34C is arranged is not limited to this case, and may be arranged in any of the X-axis positive direction, the Y-axis positive direction, and the Y-axis negative direction of the transfer robot 33, for example. ..
　図２は、本実施の形態に関する基板処理装置における、液処理ユニット３４Ａの構成の例を概略的に示す図である。なお、液処理ユニット３４Ｂおよび液処理ユニット３４Ｃの構成も、図２に例が示される場合と同様である。液処理ユニット３４Ａは、内部空間を有する箱形の処理室５０と、処理室５０内で１枚の基板ＷＦを水平姿勢で保持しつつ基板ＷＦの中央部を通る鉛直な回転軸線Ｚ２まわりに基板ＷＦを回転させるスピンチャック５１と、基板ＷＦの回転軸線Ｚ２まわりにスピンチャック５１を取り囲む筒状の処理液回収ガード５１１とを備える。 FIG. 2 is a diagram schematically showing an example of the configuration of the liquid processing unit 34A in the substrate processing apparatus according to the present embodiment. The configurations of the liquid treatment unit 34B and the liquid treatment unit 34C are also the same as in the case where an example is shown in FIG. The liquid treatment unit 34A has a box-shaped processing chamber 50 having an internal space, and a substrate around a vertical rotation axis Z2 passing through the central portion of the substrate WF while holding one substrate WF in a horizontal posture in the processing chamber 50. A spin chuck 51 for rotating the WF and a tubular processing liquid recovery guard 511 surrounding the spin chuck 51 around the rotation axis Z2 of the substrate WF are provided.
　処理室５０は、箱状の隔壁５０Ａによって囲まれている。隔壁５０Ａには、処理室５０内に基板ＷＦを搬出入するための開口部５０Ｂが形成されている。開口部５０Ｂは、シャッタ５０Ｃによって開閉される。シャッタ５０Ｃは、シャッタ昇降機構（ここでは、図示せず）によって、開口部５０Ｂを覆う閉位置（図２において二点鎖線で示される）と、開口部５０Ｂを開放する開位置（図２において実線で示される）との間で昇降させられる。基板ＷＦの搬出入の際には、搬送ロボット３３が、開口部５０Ｂを通して処理室５０内にハンド３３Ｃおよび３３Ｄをアクセスさせる。これによって、スピンチャック５１の上面に未処理の基板ＷＦを配置させたり、または、スピンチャック５１から処理済の基板ＷＦを取り除いたりすることができる。 The processing chamber 50 is surrounded by a box-shaped partition wall 50A. The partition wall 50A is formed with an opening 50B for loading and unloading the substrate WF into the processing chamber 50. The opening 50B is opened and closed by the shutter 50C. The shutter 50C has a closed position (indicated by a two-dot chain line in FIG. 2) that covers the opening 50B and an open position that opens the opening 50B (solid line in FIG. 2) by a shutter elevating mechanism (not shown here). Can be moved up and down with (indicated by). When the substrate WF is carried in and out, the transfer robot 33 accesses the hands 33C and 33D into the processing chamber 50 through the opening 50B. Thereby, the untreated substrate WF can be arranged on the upper surface of the spin chuck 51, or the processed substrate WF can be removed from the spin chuck 51.
　スピンチャック５１は、水平姿勢の基板ＷＦの下面を真空吸着する円板状のスピンベース５１Ａと、スピンベース５１Ａの中央部から下方に延びる回転軸５１Ｃと、回転軸５１Ｃを回転させることにより、スピンベース５１Ａに吸着されている基板ＷＦを回転させるスピンモータ５１Ｄとを備える。なお、スピンチャック５１は、図２に例が示された真空吸着式のチャックである場合に限られず、例えば、スピンベースの上面外周部から上方に突出する複数のチャックピンを備え、当該チャックピンによって基板ＷＦの周縁部を挟持する挟持式のチャックであってもよい。 The spin chuck 51 spins by rotating a disk-shaped spin base 51A that evacuates the lower surface of the substrate WF in a horizontal posture, a rotating shaft 51C extending downward from the central portion of the spin base 51A, and a rotating shaft 51C. A spin motor 51D for rotating the substrate WF adsorbed on the base 51A is provided. The spin chuck 51 is not limited to the vacuum suction type chuck shown in FIG. 2, and includes, for example, a plurality of chuck pins protruding upward from the outer peripheral portion of the upper surface of the spin base. It may be a sandwiching type chuck that sandwiches the peripheral edge portion of the substrate WF.
　液処理ユニット３４Ａは、スピンチャック５１に保持されている基板ＷＦの上面に向けて処理液を吐出する処理液ノズル５２と、処理液ノズル５２が先端に取り付けられている処理液アーム１５２と、処理液ノズル５２に供給される処理液を貯留する処理液タンク５３と、処理液タンク５３内の処理液を処理液ノズル５２に導く処理液配管５４と、処理液タンク５３内の処理液を処理液配管５４に送る送液装置５５（例えば、ポンプ）と、処理液配管５４の内部を開閉する処理液バルブ５６とを備える。 The liquid treatment unit 34A includes a treatment liquid nozzle 52 that discharges the treatment liquid toward the upper surface of the substrate WF held by the spin chuck 51, a treatment liquid arm 152 to which the treatment liquid nozzle 52 is attached to the tip, and a treatment liquid arm 152. The treatment liquid tank 53 for storing the treatment liquid supplied to the liquid nozzle 52, the treatment liquid pipe 54 for guiding the treatment liquid in the treatment liquid tank 53 to the treatment liquid nozzle 52, and the treatment liquid in the treatment liquid tank 53 are treated liquids. A liquid feeding device 55 (for example, a pump) for sending to the pipe 54 and a processing liquid valve 56 for opening and closing the inside of the processing liquid pipe 54 are provided.
　処理液アーム１５２は、回転駆動源１５２Ａと、軸体１５２Ｂと、一端が軸体１５２Ｂの上端に固定され、かつ、他端に処理液ノズル５２が取り付けられたアーム部１５２Ｃとを備える。処理液アーム１５２は、回転駆動源１５２Ａによって軸体１５２Ｂが回転することで、アーム部１５２Ｃの先端に取り付けられた処理液ノズル５２が、スピンチャック５１に保持されている基板ＷＦの上面に沿って移動可能となる。すなわち、アーム部１５２Ｃの先端に取り付けられた処理液ノズル５２が、水平方向に移動可能となる。ここで、回転駆動源１５２Ａの駆動は、後述の制御部によって制御される。 The processing liquid arm 152 includes a rotation drive source 152A, a shaft body 152B, and an arm portion 152C having one end fixed to the upper end of the shaft body 152B and a processing liquid nozzle 52 attached to the other end. In the processing liquid arm 152, the shaft body 152B is rotated by the rotation drive source 152A, so that the processing liquid nozzle 52 attached to the tip of the arm portion 152C is held along the upper surface of the substrate WF held by the spin chuck 51. It becomes movable. That is, the processing liquid nozzle 52 attached to the tip of the arm portion 152C can move in the horizontal direction. Here, the drive of the rotary drive source 152A is controlled by a control unit described later.
　さらに、液処理ユニット３４Ａは、処理液バルブ５６よりも上流側（すなわち、処理液タンク５３側）で処理液配管５４と処理液タンク５３とを接続する循環配管５７と、循環配管５７の内部を開閉する循環バルブ５８と、循環配管５７を流れる処理液の温度を調節する温度調節装置５９とを備える。処理液バルブ５６および循環バルブ５８の開閉は、後述の制御部によって制御される。処理液タンク５３内の処理液が処理液ノズル５２に供給される場合には、処理液バルブ５６が開かれ、循環バルブ５８が閉じられる。この状態では、送液装置５５によって処理液タンク５３から処理液配管５４に送られた処理液が、処理液ノズル５２に供給される。一方、処理液ノズル５２への処理液の供給が停止される場合には、処理液バルブ５６が閉じられ、循環バルブ５８が開かれる。この状態では、送液装置５５によって処理液タンク５３から処理液配管５４に送られた処理液が、循環配管５７を通じて処理液タンク５３内に戻る。そのため、処理液ノズル５２への処理液の供給が停止されている供給停止中は、処理液が、処理液タンク５３、処理液配管５４および循環配管５７によって構成された循環経路を循環し続ける。温度調節装置５９は、循環配管５７内を流れる処理液の温度を調節する。したがって、処理液タンク５３内の処理液は、供給停止中に循環経路で加熱され、室温よりも高い温度に維持される。 Further, the liquid treatment unit 34A has a circulation pipe 57 connecting the treatment liquid pipe 54 and the treatment liquid tank 53 on the upstream side (that is, the treatment liquid tank 53 side) of the treatment liquid valve 56, and the inside of the circulation pipe 57. It includes a circulation valve 58 that opens and closes, and a temperature control device 59 that adjusts the temperature of the processing liquid flowing through the circulation pipe 57. The opening and closing of the processing liquid valve 56 and the circulation valve 58 is controlled by a control unit described later. When the treatment liquid in the treatment liquid tank 53 is supplied to the treatment liquid nozzle 52, the treatment liquid valve 56 is opened and the circulation valve 58 is closed. In this state, the processing liquid sent from the processing liquid tank 53 to the processing liquid pipe 54 by the liquid feeding device 55 is supplied to the processing liquid nozzle 52. On the other hand, when the supply of the treatment liquid to the treatment liquid nozzle 52 is stopped, the treatment liquid valve 56 is closed and the circulation valve 58 is opened. In this state, the processing liquid sent from the processing liquid tank 53 to the processing liquid pipe 54 by the liquid feeding device 55 returns to the inside of the processing liquid tank 53 through the circulation pipe 57. Therefore, while the supply of the treatment liquid to the treatment liquid nozzle 52 is stopped, the treatment liquid continues to circulate in the circulation path composed of the treatment liquid tank 53, the treatment liquid pipe 54, and the circulation pipe 57. The temperature control device 59 adjusts the temperature of the processing liquid flowing in the circulation pipe 57. Therefore, the treatment liquid in the treatment liquid tank 53 is heated in the circulation path while the supply is stopped, and is maintained at a temperature higher than room temperature.
　また、液処理ユニット３４Ａは、スピンチャック５１に保持されている基板ＷＦの上面に向けてリンス液を吐出するリンス液ノズル６０と、リンス液ノズル６０が先端に取り付けられているリンス液アーム１６０と、リンス液供給源（ここでは、図示せず）からのリンス液をリンス液ノズル６０に供給するリンス液配管６１と、リンス液配管６１からリンス液ノズル６０へのリンス液の供給および供給停止を切り換えるリンス液バルブ６２とを備える。リンス液としては、ＤＩＷ（脱イオン水）などが用いられる。リンス液アーム１６０は、回転駆動源１６０Ａと、軸体１６０Ｂと、一端が軸体１６０Ｂの上端に固定され、かつ、他端にリンス液ノズル６０が取り付けられたアーム部１６０Ｃとを備える。リンス液アーム１６０は、回転駆動源１６０Ａによって軸体１６０Ｂが回転することで、アーム部１６０Ｃの先端に取り付けられたリンス液ノズル６０が、スピンチャック５１に保持されている基板ＷＦの上面に沿って移動可能となる。すなわち、アーム部１６０Ｃの先端に取り付けられたリンス液ノズル６０が、水平方向に移動可能となる。ここで、回転駆動源１６０Ａの駆動は、後述の制御部によって制御される。処理液ノズル５２によって基板ＷＦに処理液が供給された後に、リンス液ノズル６０からリンス液が基板ＷＦに供給されることによって、基板ＷＦに付着している処理液を洗い流すことができる。 Further, the liquid treatment unit 34A includes a rinse liquid nozzle 60 that discharges the rinse liquid toward the upper surface of the substrate WF held by the spin chuck 51, and a rinse liquid arm 160 to which the rinse liquid nozzle 60 is attached to the tip. , The rinse liquid pipe 61 that supplies the rinse liquid from the rinse liquid supply source (not shown here) to the rinse liquid nozzle 60, and the supply and stop of the supply and supply of the rinse liquid from the rinse liquid pipe 61 to the rinse liquid nozzle 60. A rinse liquid valve 62 for switching is provided. As the rinsing solution, DIW (deionized water) or the like is used. The rinse liquid arm 160 includes a rotation drive source 160A, a shaft body 160B, and an arm portion 160C having one end fixed to the upper end of the shaft body 160B and a rinse liquid nozzle 60 attached to the other end. In the rinse liquid arm 160, the shaft body 160B is rotated by the rotation drive source 160A, so that the rinse liquid nozzle 60 attached to the tip of the arm portion 160C is along the upper surface of the substrate WF held by the spin chuck 51. It becomes movable. That is, the rinse liquid nozzle 60 attached to the tip of the arm portion 160C can move in the horizontal direction. Here, the drive of the rotary drive source 160A is controlled by a control unit described later. After the treatment liquid is supplied to the substrate WF by the treatment liquid nozzle 52, the rinse liquid is supplied to the substrate WF from the rinse liquid nozzle 60, so that the treatment liquid adhering to the substrate WF can be washed away.
　処理液回収ガード５１１は、スピンチャック５１の周囲を取り囲むように設けられている。処理液回収ガード５１１は、図示しないモータによって、鉛直方向に昇降するように構成されていることが好ましい。その場合、処理液回収ガード５１１の上部は、その上端がスピンベース５１Ａに保持された基板ＷＦよりも上側となる上位置と、当該基板ＷＦよりも下側になる下位置との間で昇降する。基板ＷＦの上面から外側に飛散した処理液は、処理液回収ガード５１１の内側面に受け止められる。そして、処理液回収ガード５１１に受け止められた処理液は、処理室５０の底部に設けられた排液口５１３を通じて、処理室５０の外部に適宜排出される。排液口５１３から排出された処理液の少なくとも一部は再利用されることが好ましい。言い換えれば、排出された処理液の少なくとも一部は、処理液タンク５３へ戻されることによって再利用されることが好ましい。 The processing liquid recovery guard 511 is provided so as to surround the spin chuck 51. The treatment liquid recovery guard 511 is preferably configured to move up and down in the vertical direction by a motor (not shown). In that case, the upper portion of the processing liquid recovery guard 511 moves up and down between an upper position whose upper end is above the substrate WF held by the spin base 51A and a lower position whose upper end is below the substrate WF. .. The treatment liquid scattered from the upper surface of the substrate WF to the outside is received by the inner side surface of the treatment liquid recovery guard 511. Then, the treatment liquid received by the treatment liquid recovery guard 511 is appropriately discharged to the outside of the treatment chamber 50 through the drainage port 513 provided at the bottom of the treatment chamber 50. It is preferable that at least a part of the treatment liquid discharged from the drain port 513 is reused. In other words, it is preferable that at least a part of the discharged treatment liquid is reused by returning it to the treatment liquid tank 53.
　また、液処理ユニット３４Ａは、基板ＷＦ上に設けられた膜の膜厚を測定するためのセンサ８１と、センサ８１が先端に取り付けられている測定アーム１８１とを備える。 Further, the liquid treatment unit 34A includes a sensor 81 for measuring the film thickness of the film provided on the substrate WF, and a measuring arm 181 to which the sensor 81 is attached to the tip.
　センサ８１としては、例えば、光学式の変位センサなどが用いられる。測定の際にセンサ８１から対向する基板ＷＦなどに照射される光の測定照射波長を、測定対象となる膜（具体的には、図６を参照して後述する被処理膜５０１）に合わせて調整することによって、様々な膜（例えば、シリコン膜）の膜厚を測定することができる。 As the sensor 81, for example, an optical displacement sensor or the like is used. The measurement irradiation wavelength of the light emitted from the sensor 81 to the substrate WF or the like facing the substrate during the measurement is matched with the film to be measured (specifically, the film to be processed 501 which will be described later with reference to FIG. 6). By adjusting, the film thickness of various films (for example, silicon film) can be measured.
　測定アーム１８１は、回転駆動源１８１Ａと、軸体１８１Ｂと、一端が軸体１８１Ｂの上端に固定され、かつ、他端にセンサ８１が取り付けられたアーム部１８１Ｃと、を備える。回転駆動源１８１Ａによって軸体１８１Ｂが回転することで、アーム部１８１Ｃの先端に取り付けられたセンサ８１が、スピンチャック５１に保持されている基板ＷＦの上面に沿って移動可能となる。すなわち、アーム部１８１Ｃの先端に取り付けられたセンサ８１が、水平方向に移動可能となる。ここで、回転駆動源１８１Ａの駆動は、後述の制御部によって制御される。 The measurement arm 181 includes a rotation drive source 181A, a shaft body 181B, and an arm portion 181C having one end fixed to the upper end of the shaft body 181B and a sensor 81 attached to the other end. When the shaft body 181B is rotated by the rotation drive source 181A, the sensor 81 attached to the tip of the arm portion 181C can move along the upper surface of the substrate WF held by the spin chuck 51. That is, the sensor 81 attached to the tip of the arm portion 181C can move in the horizontal direction. Here, the drive of the rotary drive source 181A is controlled by a control unit described later.
　測定アーム１８１は、少なくとも処理液アーム１５２またはリンス液アーム１６０よりも基板ＷＦの上面から離間して位置している。すなわち、測定アーム１８１の鉛直方向の高さＨ１（スピンベース５１Ａの上面からアーム部１８１Ｃまたはセンサ８１までの長さ）は、処理液アーム１５２の鉛直方向の高さＨ２（スピンベース５１Ａの上面からアーム部１５２Ｃまたは処理液ノズル５２までの長さ）またはリンス液アーム１６０の鉛直方向の高さＨ３（スピンベース５１Ａの上面からアーム部１６０Ｃまたはリンス液ノズル６０までの長さ）よりも高い。このように、測定アーム１８１が基板ＷＦの上面から離間して位置していることによって、基板ＷＦの上面に処理液などが吐出された際に、跳ね返った液などがセンサ８１に付着することを抑制することができる。なお、図２の例に示されるように、測定アーム１８１は、処理液アーム１５２およびリンス液アーム１６０の双方よりも、スピンベース５１Ａの上面から離間して位置していてもよい。 The measuring arm 181 is located at least farther from the upper surface of the substrate WF than the processing liquid arm 152 or the rinsing liquid arm 160. That is, the vertical height H1 of the measuring arm 181 (the length from the upper surface of the spin base 51A to the arm portion 181C or the sensor 81) is the vertical height H2 of the processing liquid arm 152 (from the upper surface of the spin base 51A). It is higher than the height H3 in the vertical direction of the arm portion 152C or the treatment liquid nozzle 52) or the rinse liquid arm 160 (the length from the upper surface of the spin base 51A to the arm portion 160C or the rinse liquid nozzle 60). Since the measuring arm 181 is located away from the upper surface of the substrate WF in this way, when the processing liquid or the like is discharged to the upper surface of the substrate WF, the rebounded liquid or the like adheres to the sensor 81. It can be suppressed. As shown in the example of FIG. 2, the measuring arm 181 may be located farther from the upper surface of the spin base 51A than both the processing liquid arm 152 and the rinsing liquid arm 160.
　図３は、液処理ユニット３４Ａにおけるそれぞれのアームの位置の例を示す平面図である。処理液アーム１５２、リンス液アーム１６０および測定アーム１８１は、それぞれがスピンベース５１Ａの径方向（少なくとも、径方向の成分を有する方向）に移動可能であり、スピンチャック５１において回転する基板ＷＦの上面をスキャン可能である。 FIG. 3 is a plan view showing an example of the position of each arm in the liquid treatment unit 34A. The processing liquid arm 152, the rinsing liquid arm 160, and the measuring arm 181 are each movable in the radial direction of the spin base 51A (at least, the direction having the radial component), and the upper surface of the substrate WF rotating in the spin chuck 51. Can be scanned.
　図４は、基板処理装置１（図１）における、制御部７と他の各要素との接続関係の例を示す機能ブロック図である。制御部７は、それぞれの液処理ユニットの作動部（例えば、処理液バルブ５６、循環バルブ５８、リンス液バルブ６２、シャッタ５０Ｃまたはスピンモータ５１Ｄなど）、搬送機構３１を駆動させる駆動部（例えば、搬送機構３１の往復移動のためのモータなど）、インデクサロボット２３の作動部（例えば、多関節アーム２３Ｂを駆動させるためのモータなど）、搬送ロボット３３の作動部（例えば、水平モータ１３３Ｃ、回動モータ１３３Ｄまたは鉛直モータ１３３Ｈなど）に接続されており、それらの動作を制御する。 FIG. 4 is a functional block diagram showing an example of the connection relationship between the control unit 7 and each of the other elements in the substrate processing device 1 (FIG. 1). The control unit 7 is a driving unit (for example, a processing liquid valve 56, a circulation valve 58, a rinse liquid valve 62, a shutter 50C, a spin motor 51D, etc.) and a driving unit for driving the transfer mechanism 31 of each liquid processing unit (for example, A motor for reciprocating movement of the transfer mechanism 31), an operating part of the indexer robot 23 (for example, a motor for driving the articulated arm 23B), an operating part of the transfer robot 33 (for example, a horizontal motor 133C, rotation). It is connected to a motor 133D or a vertical motor 133H, etc.) and controls their operation.
　制御部７のハードウェア構成は、一般的なコンピュータと同様である。すなわち、制御部７は、各種演算処理を行う中央演算処理装置（ｃｅｎｔｒａｌ　ｐｒｏｃｅｓｓｉｎｇ　ｕｎｉｔ、すなわち、ＣＰＵ）７１と、基本プログラムを記憶する読み出し専用のメモリであるリードオンリーメモリー（ｒｅａｄ　ｏｎｌｙ　ｍｅｍｏｒｙ、すなわち、ＲＯＭ）７２と、各種情報を記憶する読み書き自在のメモリであるランダムアクセスメモリー（ｒａｎｄｏｍ　ａｃｃｅｓｓ　ｍｅｍｏｒｙ、すなわち、ＲＡＭ）７３と、制御用アプリケーション（プログラム）またはデータなどを記憶する非一過性の記憶部７４とを備える。ＣＰＵ７１、ＲＯＭ７２、ＲＡＭ７３および記憶部７４は、バス配線７５などによって互いに接続されている。制御アプリケーションまたはデータは、非一過性の記録媒体（例えば、半導体メモリ、光学メディアまたは磁気メディアなど）に記録された状態で、制御部７に提供されてもよい。この場合、当該記録媒体から制御アプリケーションまたはデータを読み取る読み取り装置がバス配線７５に接続されているとよい。また、制御アプリケーションまたはデータは、ネットワークを介してサーバーなどから制御部７に提供されてもよい。この場合、外部装置とネットワーク通信を行う通信部がバス配線７５に接続されているとよい。 The hardware configuration of the control unit 7 is the same as that of a general computer. That is, the control unit 7 has a central processing unit (CPU) 71 that performs various arithmetic processes and a read-only memory (read only memory, that is, ROM) that is a read-only memory that stores a basic program. ) 72, a random access memory (RAM) 73 which is a readable and writable memory for storing various information, and a non-transient storage unit 74 for storing a control application (program) or data. And. The CPU 71, ROM 72, RAM 73, and storage unit 74 are connected to each other by bus wiring 75 or the like. The control application or data may be provided to the control unit 7 in a state of being recorded on a non-transient recording medium (for example, a semiconductor memory, an optical medium, a magnetic medium, or the like). In this case, it is preferable that a reading device for reading the control application or data from the recording medium is connected to the bus wiring 75. Further, the control application or data may be provided to the control unit 7 from a server or the like via a network. In this case, it is preferable that the communication unit that performs network communication with the external device is connected to the bus wiring 75.
　バス配線７５には、入力部７６および表示部７７が接続されている。入力部７６はキーボードおよびマウスなどの各種入力デバイスを含む。作業者は、入力部７６を介して制御部７に各種情報を入力する。表示部７７は、液晶モニタなどの表示デバイスで構成されており、各種情報を表示する。 The input unit 76 and the display unit 77 are connected to the bus wiring 75. The input unit 76 includes various input devices such as a keyboard and a mouse. The operator inputs various information to the control unit 7 via the input unit 76. The display unit 77 is composed of a display device such as a liquid crystal monitor, and displays various information.
　図５は、基板処理方法によって処理されることになる基板ＷＦの構成の例を概略的に示す平面図である。本実施の形態の基板処理方法は、少なくとも１つの基板ＷＦを処理するものであり、好ましくは、前述した液処理ユニット３４Ａ等の各液処理ユニットによって複数の基板ＷＦを順次処理するものである。基板ＷＦの各々は、径方向において半径Ｒを有する円形形状を有している。また基板ＷＦの各々は複数のチップ領域ＲＳを有する。 FIG. 5 is a plan view schematically showing an example of the configuration of the substrate WF to be processed by the substrate processing method. The substrate processing method of the present embodiment processes at least one substrate WF, and preferably, a plurality of substrate WFs are sequentially processed by each liquid processing unit such as the liquid processing unit 34A described above. Each of the substrate WFs has a circular shape having a radius R in the radial direction. Further, each of the substrate WFs has a plurality of chip regions RS.
　図６は、図５の線ＶＩ－ＶＩに沿う概略的な部分断面図である。基板ＷＦは、被処理膜５０１と、デバイス構造層５０２とを有する。被処理膜５０１は、面５０１ａと、厚み方向（図中、縦方向）においてその反対の面５０１ｂとを有している。デバイス構造層５０２は、面５０１ｂに面する面５０２ａと、その反対の面５０２ｂとを有している。デバイス構造層５０２は半導体層を含む。被処理膜５０１は、典型的には半導体基板であり、例えばシリコン基板である。チップ領域ＲＳの各々には、半導体デバイスとなる構造が設けられている。なお半導体デバイスは、本実施の形態における基板処理方法の後、さらにいくつかの追加工程を経て、最終的な製品として得られる。これら追加工程は、基板ＷＦをダイシングすることによって各チップ領域ＲＳを切り出す工程を含む。 FIG. 6 is a schematic partial cross-sectional view taken along the line VI-VI of FIG. The substrate WF has a film 501 to be processed and a device structure layer 502. The film 501 to be treated has a surface 501a and a surface 501b opposite to the surface 501a in the thickness direction (longitudinal direction in the drawing). The device structure layer 502 has a surface 502a facing the surface 501b and a surface 502b opposite to the surface 501b. The device structure layer 502 includes a semiconductor layer. The film 501 to be processed is typically a semiconductor substrate, for example, a silicon substrate. Each of the chip region RS is provided with a structure that serves as a semiconductor device. The semiconductor device is obtained as a final product through some additional steps after the substrate processing method in the present embodiment. These additional steps include a step of cutting out each chip region RS by dicing the substrate WF.
　被処理膜５０１は、厚みｄｗｆ（例えば１ｍｍ程度）を有する基板をグラインドすることによって、厚みｄｇｒ（例えば５０μｍ程度）を有する膜とすることによって形成されてよい。グラインドは、典型的には基板の縁部には施されず、その場合、図６に示されているように、基板ＷＦは、幅数ｍｍ程度の縁部において局所的に厚い部分を有する。以下、この厚い部分については無視して説明を行う。 The film 501 to be treated may be formed by grinding a substrate having a thickness d wf (for example, about 1 mm) to form a film having a thickness d gr (for example, about 50 μm). Grinding is typically not applied to the edges of the substrate, in which case the substrate WF has a locally thick portion at the edges of about a few millimeters in width, as shown in FIG. Hereinafter, this thick portion will be ignored for explanation.
　本実施の形態１においては、上記半導体デバイスは縦型パワーデバイスである。縦型パワーデバイスは、典型的には、１対の主電極（例えば、ソース電極／ドレイン電極の対、エミッタ電極／コレクタ電極の対、または、アノード電極／カソード電極の対）を有する。面５０２ｂ上には１対の主電極の一方が既に設けられており、１対の主電極の他方は、本実施の形態における基板処理方法によって被処理膜５０１の厚みが厚みｄｇｒから厚みｄｔｇｔへ低減された後、面５０１ａ上に形成されることになる。厚みｄｔｇｔが過大でないことによって、縦型パワーデバイスの電気抵抗が過大となることを避けることができる。また厚みｄｔｇｔが過小でないことによって、縦型パワーデバイスの耐電圧が不足することを避けることができる。デバイス構造層５０２が含む半導体層は、被処理膜５０１上に形成されたエピタキシャル層であってよい。この半導体層と、エピタキシャル層とは、屈折率の相違等に起因して光学的に区別可能である。 In the first embodiment, the semiconductor device is a vertical power device. Vertical power devices typically have a pair of main electrodes (eg, a pair of source / drain electrodes, a pair of emitter / collector electrodes, or a pair of anode / cathode electrodes). One of the pair of main electrodes is already provided on the surface 502b, and the thickness of the film 501 to be treated is from the thickness d gr to the thickness d of the other of the pair of main electrodes according to the substrate treatment method in the present embodiment. After being reduced to tgt , it will be formed on the surface 501a. Since the thickness dtgt is not excessive, it is possible to prevent the electrical resistance of the vertical power device from becoming excessive. Further, since the thickness dtgt is not too small, it is possible to avoid insufficient withstand voltage of the vertical power device. The semiconductor layer included in the device structure layer 502 may be an epitaxial layer formed on the film 501 to be treated. The semiconductor layer and the epitaxial layer can be optically distinguished due to the difference in refractive index and the like.
　次に、図７から図９を参照しつつ、本実施の形態における基板処理方法について、以下に説明する。なおこの基板処理方法は、基板処理装置１（図１）によって行われるものである。具体的にはこの基板処理方法は、基板収容器２１（図１）に収容されている基板ＷＦが、インデクサロボット２３、搬送機構３１および搬送ロボット３３を介していずれかの液処理ユニットに搬入され、さらにスピンチャック５１（図２）に保持された状態で行われるものである。 Next, the substrate processing method in the present embodiment will be described below with reference to FIGS. 7 to 9. This substrate processing method is performed by the substrate processing apparatus 1 (FIG. 1). Specifically, in this substrate processing method, the substrate WF housed in the substrate container 21 (FIG. 1) is carried into one of the liquid processing units via the indexer robot 23, the transfer mechanism 31, and the transfer robot 33. Further, it is performed in a state of being held by the spin chuck 51 (FIG. 2).
　図７および図８のそれぞれは、本実施の形態１における基板処理方法の例を示すシーケンス図およびフローチャートである。 7 and 8 are sequence diagrams and flowcharts showing an example of the substrate processing method according to the first embodiment.
　まず、リンス処理が行われる（図８：ステップＳＴ１１）。リンス処理では、制御部７（図４）の制御でリンス液ノズル６０（図３）からリンス液が吐出される。これにより、基板ＷＦの面５０１ａ（図６）における付着物などが洗い流される。リンス液としては、例えば、ＤＩＷ（脱イオン水）が用いられる。 First, the rinsing process is performed (Fig. 8: Step ST11). In the rinsing process, the rinsing liquid is discharged from the rinsing liquid nozzle 60 (FIG. 3) under the control of the control unit 7 (FIG. 4). As a result, deposits and the like on the surface 501a (FIG. 6) of the substrate WF are washed away. As the rinsing solution, for example, DIW (deionized water) is used.
　次に、乾燥処理が行われる（図８：ステップＳＴ１２）。乾燥処理では、制御部７の制御で、基板ＷＦに対してＩＰＡ（イソプロピルアルコール）などを供給した後、スピンベース５１Ａを回転させることによって基板ＷＦが乾燥される。 Next, a drying process is performed (Fig. 8: Step ST12). In the drying process, the substrate WF is dried by rotating the spin base 51A after supplying IPA (isopropyl alcohol) or the like to the substrate WF under the control of the control unit 7.
　次に、径方向における被処理膜５０１の厚みプロファイルの測定が行われる（図８：ステップＳＴ２１）。具体的には、基板ＷＦを回転させながら、径方向においてセンサ８１をスキャンさせることによって、厚みプロファイルが測定される。センサ８１のスキャンは、制御部７の制御で測定アーム１８１のアーム部１８１Ｃを回動させることによって行われる。図９は、上記ステップＳＴ２１の例を説明する模式図である。センサ８１のスキャンＳＣによって、径方向の位置ｒについての厚みｄのプロファイルが得られる。スキャンＳＣの速度が基板ＷＦの回転速度に比して十分に遅ければ、径方向に依存しての厚みプロファイルが一義的に得られる。例えば、径方向におけるセンサ８１の位置ｒがｒ１、ｒ２およびｒ３のそれぞれのときに、円周Ｃ１、Ｃ２およびＣ３における被処理膜５０１の厚みの平均値が、厚みｄとして検出される。 Next, the thickness profile of the film 501 to be processed in the radial direction is measured (FIG. 8: step ST21). Specifically, the thickness profile is measured by scanning the sensor 81 in the radial direction while rotating the substrate WF. The scan of the sensor 81 is performed by rotating the arm unit 181C of the measurement arm 181 under the control of the control unit 7. FIG. 9 is a schematic diagram illustrating an example of step ST21. The scan SC of the sensor 81 provides a profile of thickness d for the radial position r. If the speed of the scan SC is sufficiently slower than the rotation speed of the substrate WF, a thickness profile that depends on the radial direction can be uniquely obtained. For example, when the position r of the sensor 81 in the radial direction is r 1 , r 2 and r 3 , respectively, the average value of the thicknesses of the film 501 to be processed at the circumferences C 1 , C 2 and C 3 is defined as the thickness d. Detected.
　次に制御部７による算術処理が行われる。まず、厚みプロファイル（図９）から平均厚みｄａｖｇが算出される（図８：ステップＳＴ２２Ａ）。次に、後述する厚み測定において特に着目されることになる少なくとも１つの候補位置が抽出される（図８：ステップＳＴ２３Ａ）。具体的には、厚みプロファイルが平均厚みｄａｖｇを有する少なくとも１つの径方向位置ｒが、少なくとも１つの候補位置として抽出される。図９に示された例においては、３つの位置ｒａｖｇ１、ｒａｖｇ２、ｒａｖｇ３が抽出される。 Next, arithmetic processing is performed by the control unit 7. First, the average thickness d avg is calculated from the thickness profile (Fig. 9) (FIG. 8: step ST22a). Next, at least one candidate position that will be of particular interest in the thickness measurement described later is extracted (FIG. 8: step ST23A). Specifically, at least one radial position r whose thickness profile has an average thickness davg is extracted as at least one candidate position. In the example shown in FIG. 9, three positions r- avg1 , r- avg2 , and r- avg3 are extracted.
　次に、測定位置の決定（図８：ステップＳＴ２４）が行われる。具体的には、少なくとも１つ（上記例においては３つ）の候補位置の少なくともいずれかが、少なくとも１つの測定位置に決定される。以下、その方法の例について詳述する。 Next, the measurement position is determined (FIG. 8: step ST24). Specifically, at least one of at least one (three in the above example) candidate position is determined to be at least one measurement position. Hereinafter, an example of the method will be described in detail.
　図１０は、測定位置の決定条件を設定するために表示部７７（図４）が作業者へ表示する画面ＳＷの例を示す図である。画面ＳＷは、厚みプロファイルウィンドウＤＡ１と、選択ウィンドウＤＡ２とを有している。厚みプロファイルウィンドウＤＡ１は、厚みプロファイルに加えて、上述した候補位置を表示することが好ましい。図示された例においては、位置ｒａｖｇ１、ｒａｖｇ２およびｒａｖｇ３のそれぞれの座標１６ｍｍ、５５ｍｍおよび１２５ｍｍが表示されている。また厚みプロファイルウィンドウＤＡ１は、推奨下限値ｒＬおよび推奨上限値ｒＵを表示することが好ましい。推奨下限値ｒＬおよび推奨上限値ｒＵは、予め定められた正の値であり、基板ＷＦの半径Ｒに関して、０＜ｒＬ＜ｒＵ＜Ｒを満たすものである。好ましくは、Ｒ／３≦ｒＬ＜２Ｒ／３かつＲ／３＜ｒＵ≦２Ｒ／３であり、図１０においてはｒＬ＝Ｒ／３かつｒＵ＝２Ｒ／３である。なお図１０の例は、Ｒ＝１５０ｍｍ程度の場合に対応している。 FIG. 10 is a diagram showing an example of a screen SW displayed by the display unit 77 (FIG. 4) to the operator in order to set the determination condition of the measurement position. The screen SW has a thickness profile window DA1 and a selection window DA2. The thickness profile window DA1 preferably displays the above-mentioned candidate positions in addition to the thickness profile. In the illustrated example, the coordinates 16 mm, 55 mm and 125 mm of the positions ravg1 , ravg2 and ravg3 are displayed, respectively. Further, the thickness profile window DA1 preferably displays a recommended lower limit value r L and a recommended upper limit value r U. The recommended lower limit value r L and the recommended upper limit value r U are predetermined positive values and satisfy 0 <r L <r U <R with respect to the radius R of the substrate WF. Preferably, R / 3 ≦ r L <2R / 3 and R / 3 <r U ≦ 2R / 3, and in FIG. 10, r L = R / 3 and r U = 2R / 3. The example of FIG. 10 corresponds to the case where R = about 150 mm.
　位置ｒに関して、０≦ｒ＜Ｒ／３の範囲は、処理液ノズル５２が基板ＷＦの中心近傍に位置するときに、処理液が厚くなり、かつその液面が不安定になりやすい範囲であり、高精度の厚み測定には適していない。一方、２Ｒ／３＜ｒの範囲は、基板ＷＦの回転の影響に起因して厚み測定が乱されやすく、回転の偏心が大きい場合には測定が特に乱される。また、測定される円周の長さが大きいので、測定値がばらつきやすい。 With respect to the position r, the range of 0 ≦ r <R / 3 is a range in which the treatment liquid becomes thick and the liquid level tends to become unstable when the treatment liquid nozzle 52 is located near the center of the substrate WF. , Not suitable for high-precision thickness measurement. On the other hand, in the range of 2R / 3 <r, the thickness measurement is easily disturbed due to the influence of the rotation of the substrate WF, and the measurement is particularly disturbed when the eccentricity of rotation is large. Moreover, since the length of the circumference to be measured is large, the measured value is likely to vary.
　入力部７６（図４）は、少なくとも１つの候補位置（図１０においては３つの候補位置ｒａｖｇ１、ｒａｖｇ２、ｒａｖｇ３）のうちいずれを少なくとも１つの測定位置に決定するかの指示を受け付けてよい。具体的には、選択ウィンドウＤＡ２のボタンＢＴ１～ＢＴ５のいずれが作業者によって選択されるかを受け付けてよい。作業者がボタンＢＴ１を選択した場合は位置ｒａｖｇ１が測定位置に含まれ、ボタンＢＴ２を選択した場合は位置ｒａｖｇ２が測定位置に含まれ、ボタンＢＴ３を選択した場合は位置ｒａｖｇ３が測定位置に含まれる。作業者がボタンＢＴ４を選択した場合は、測定位置として、複数の候補位置のうち、推奨位置ｒｃに最も近いものが、測定位置として選択される。推奨位置ｒｃは、好ましくは推奨下限値ｒＬ以上推奨上限値ｒＵ以下であり、例えば推奨下限値ｒＬおよび推奨上限値ｒＵの平均値である。図１０の例においては、ボタンＢＴ４が選択されると、結果的に、位置ｒａｖｇ２が測定位置に決定される。作業者がボタンＢＴ５を選択した場合、測定位置はｒＬ以上ｒＵ以下に制限される。図１０の例においては、ボタンＢＴ５が選択されると、結果的に、位置ｒａｖｇ２が測定位置に決定される。 Input unit 76 (FIG. 4) receives an indication of determining at least one measurement position to one of the at least one candidate position (three candidate positions r avg1 in FIG 10, r avg2, r avg3) Good. Specifically, it may be accepted which of the buttons BT1 to BT5 of the selection window DA2 is selected by the operator. If the operator selects a button BT1 included in the measurement position position r avg1, if you select the button BT2 included in the measurement position position r AVG2, if you select the button BT3 measurement position position r Avg3 include. If the operator selects the button BT4, a measurement position, among the plurality of candidate positions, those closest to the recommended position r c, is selected as the measurement position. Recommended position r c is preferably not more than the recommended lower limit r L or more recommended limits r U, for example, the average value of the recommended lower limit r L and recommended limits r U. In the example of FIG. 10, when the button BT4 is selected, as a result, the position ravg2 is determined as the measurement position. When the operator selects the button BT5, the measurement position is limited to r L or more and r U or less. In the example of FIG. 10, when the button BT5 is selected, as a result, the position ravg2 is determined as the measurement position.
　なお上記においては、測定位置の決定に際して作業者の指示が与えられる場合について説明したが、作業者の指示なしに制御部７による決定がなされてもよい。また測定位置の数は１つ以上の任意の数である。測定位置の数が複数の場合、後述する厚みの時間的変化のモニタにおいて、センサ８１が適宜移動されることによって、各測定位置の厚みがモニタされる。これら複数の測定位置での厚みに基づいて算出された代表厚みが、測定位置での厚みとみなされてもよい。代表厚みは、例えば、複数の測定位置での厚みの平均である。測定位置の数が１つの場合、後述する、厚みの時間的変化のモニタにおいて、センサ８１の位置は、測定位置で固定されていてよく、あるいは、測定位置での間欠的なモニタの合間に測定位置から外れてもよい。 In the above, the case where the operator's instruction is given when determining the measurement position has been described, but the determination may be made by the control unit 7 without the operator's instruction. The number of measurement positions is any one or more. When the number of measurement positions is plurality, the thickness of each measurement position is monitored by appropriately moving the sensor 81 in the monitoring of the temporal change of the thickness, which will be described later. The representative thickness calculated based on the thicknesses at the plurality of measurement positions may be regarded as the thickness at the measurement positions. The representative thickness is, for example, the average of the thicknesses at a plurality of measurement positions. When the number of measurement positions is one, the position of the sensor 81 may be fixed at the measurement position in the monitor of the temporal change of the thickness, which will be described later, or the measurement is performed between the intermittent monitors at the measurement position. It may be out of position.
　次に、処理液の供給が開始される（図８：ステップＳＴ２５）。これにより、基板ＷＦを回転させながら、基板ＷＦの被処理膜５０１上へ処理液ノズル５２から処理液が供給される。これにより、基板ＷＦの被処理膜５０１へのエッチング処理などが行われる。例えば、フッ化水素酸（ＨＦ）と硝酸（ＨＮＯ３）との混合液であるフッ硝酸を用いて、被処理膜５０１としてのシリコン膜のエッチング処理が行われる。 Next, the supply of the treatment liquid is started (FIG. 8: step ST25). As a result, the processing liquid is supplied from the processing liquid nozzle 52 onto the film 501 to be processed of the substrate WF while rotating the substrate WF. As a result, the substrate WF is etched into the film 501 to be processed. For example, the etching treatment of the silicon film as the film 501 to be treated is performed using hydrofluoric acid (HF) and nitric acid (HNO 3), which is a mixed solution of nitric acid.
　次に、上記のように処理液が供給されている際、厚みの時間的変化のモニタが行われる（図８：ステップＳＴ２６）。具体的には、基板ＷＦを回転させながら、センサ８１によって、上述した少なくとも１つの測定位置（例えば、図９における位置ｒａｖｇ２）で、被処理膜５０１の厚みの時間的変化がモニタされる。 Next, when the treatment liquid is being supplied as described above, the temporal change in thickness is monitored (FIG. 8: step ST26). Specifically, while rotating the substrate WF, the sensor 81 monitors the temporal change in the thickness of the film 501 to be processed at at least one measurement position (for example, position ravg2 in FIG. 9) described above.
　処理液が供給されている際、処理液ノズル５２には、径方向における周期的変位ＳＣ２（図３）が与えられることが好ましい。加えて、センサ８１にも、径方向における周期的変位ＳＣ１（図３）が与えられることが好ましい。その場合、センサ８１が基板ＷＦの中心に最も近づくタイミングは、処理液ノズル５２が基板ＷＦの中心に最も近づくタイミングと異なっている。好ましくは、センサ８１の変位ＳＣ１の周期と処理液ノズル５２の変位ＳＣ２の周期とは同一周期であり、かつ、センサ８１が基板ＷＦの中心に最も近づくタイミングは、処理液ノズル５２が基板ＷＦの中心から最も遠ざかるタイミングである。これにより、処理液が基板ＷＦ上に衝突する位置と、センサ８１の位置との間の距離が確保されやすい。よって、処理液の液面が不安定な位置と、センサ８１の位置との間の距離が確保されやすい。その結果、センサ８１による測定を安定的に行うことができる。 When the treatment liquid is being supplied, it is preferable that the treatment liquid nozzle 52 is given a periodic displacement SC2 (FIG. 3) in the radial direction. In addition, it is preferable that the sensor 81 is also given a periodic displacement SC1 (FIG. 3) in the radial direction. In that case, the timing at which the sensor 81 is closest to the center of the substrate WF is different from the timing at which the processing liquid nozzle 52 is closest to the center of the substrate WF. Preferably, the period of the displacement SC1 of the sensor 81 and the period of the displacement SC2 of the processing liquid nozzle 52 are the same period, and the timing at which the sensor 81 is closest to the center of the substrate WF is such that the processing liquid nozzle 52 is the substrate WF. It is the timing to move away from the center. As a result, it is easy to secure a distance between the position where the processing liquid collides with the substrate WF and the position of the sensor 81. Therefore, it is easy to secure a distance between the position where the liquid level of the treatment liquid is unstable and the position of the sensor 81. As a result, the measurement by the sensor 81 can be performed stably.
　次に、処理液の供給の停止が行われる（図８：ステップＳＴ２７）。具体的には、少なくとも１つの測定位置（例えば、図９における位置ｒａｖｇ２）での被処理膜５０１の厚みに基づいて、基板ＷＦの表面上への処理液の供給が停止される。この具体的な方法の例については後述する。ステップＳＴ２７は、少なくとも１つの測定位置で被処理膜５０１の厚みが２０μｍ以上に保たれるように行われることが好ましく、３０μｍ以上に保たれるように行われることがより好ましい。 Next, the supply of the treatment liquid is stopped (FIG. 8: step ST27). Specifically, the supply of the treatment liquid onto the surface of the substrate WF is stopped based on the thickness of the film 501 to be treated at at least one measurement position (for example, the position ravg2 in FIG. 9). An example of this specific method will be described later. Step ST27 is preferably performed so that the thickness of the film 501 to be treated is maintained at 20 μm or more, and more preferably 30 μm or more at at least one measurement position.
　次に、リンス処理が行われる（図８：ステップＳＴ３１）。具体的には、制御部７の制御でリンス液ノズル６０からリンス液が吐出される。これにより、基板ＷＦ上の処理液などが洗い流される。リンス液としては、例えば、ＤＩＷ（脱イオン水）が用いられる。次に、乾燥処理（図８：ステップＳＴ３２）が、前述したステップＳＴ１２と同様に行われる。次に、基板処理の結果を確認する意図で、厚みプロファイルの測定が再度行われてよい（図８：ステップＳＴ４１）。 Next, the rinsing process is performed (Fig. 8: Step ST31). Specifically, the rinse liquid is discharged from the rinse liquid nozzle 60 under the control of the control unit 7. As a result, the treatment liquid and the like on the substrate WF are washed away. As the rinsing solution, for example, DIW (deionized water) is used. Next, the drying process (FIG. 8: step ST32) is performed in the same manner as in step ST12 described above. Next, the thickness profile may be measured again with the intention of confirming the result of the substrate treatment (FIG. 8: step ST41).
　以上により、本実施の形態１の基板処理が行われる。 As described above, the substrate processing of the first embodiment is performed.
　図１１は、処理液の供給の停止（ステップＳＴ２７（図８））のタイミングを決定する方法の例について説明するグラフ図である。図中、線Ｇａｃｔは、測定位置での厚みｄの検出値であり、ｄ＝ｄｃｏｒとなった時間ｔ＝ｔａｃｔにおいて、処理液の供給が停止される。ここで、ｄｃｏｒ＝ｄｔｇｔ＋ＭＧが満たされ、厚みｄｔｇｔは目標値であり、補正値ＭＧは、予め定められた補正厚みである。処理液の供給が停止されても、基板ＷＦ上から処理液が完全に除去されるまでには、ある程度の時間を要するので、基板処理の進行はすぐには停止しない。補正値ＭＧは、これを考慮して定められ、例えば１～２μｍ程度である。 FIG. 11 is a graph illustrating an example of a method of determining the timing of stopping the supply of the treatment liquid (step ST27 (FIG. 8)). In the figure, the line G act is a detected value of the thickness d at the measurement position, and the supply of the treatment liquid is stopped at the time t = t act when d = d cor. Here, d cor = d tgt + MG is satisfied, the thickness d tgt is a target value, and the correction value MG is a predetermined correction thickness. Even if the supply of the treatment liquid is stopped, it takes a certain amount of time for the treatment liquid to be completely removed from the substrate WF, so that the progress of the substrate treatment does not stop immediately. The correction value MG is determined in consideration of this, and is, for example, about 1 to 2 μm.
　前述したように、本実施の形態における基板処理方法は、複数の基板ＷＦを順次処理するものであってよい。この場合、図８に示された方法によって第１基板ＷＦが処理された後に、当該方法を再度行うことによって第２基板ＷＦが処理される。ここで、第２基板ＷＦは第１基板ＷＦの直後に処理される基板のことである。この際、処理液ノズル５２から第１基板ＷＦの被処理膜５０１上へ供給された処理液の少なくとも一部が、処理液ノズル５２から第２基板ＷＦの被処理膜５０１上へ供給される処理液として再利用されてよい。これにより処理液の消費量を抑制することができるが、一方で、処理液の特性の経時的変化が無視できなくなる。そこで、本実施の形態のように、基板処理方法の進行をセンサ８１によってモニタし、その結果に応じて処理時間等の処理条件を調整することが、より重要となる。 As described above, the substrate processing method in the present embodiment may sequentially process a plurality of substrate WFs. In this case, after the first substrate WF is processed by the method shown in FIG. 8, the second substrate WF is processed by repeating the method. Here, the second substrate WF is a substrate that is processed immediately after the first substrate WF. At this time, at least a part of the treatment liquid supplied from the treatment liquid nozzle 52 onto the processing film 501 of the first substrate WF is supplied from the treatment liquid nozzle 52 onto the treatment film 501 of the second substrate WF. It may be reused as a liquid. As a result, the consumption of the treatment liquid can be suppressed, but on the other hand, the change in the characteristics of the treatment liquid with time cannot be ignored. Therefore, it is more important to monitor the progress of the substrate processing method by the sensor 81 and adjust the processing conditions such as the processing time according to the result as in the present embodiment.
　上記のように第１基板ＷＦおよび第２基板ＷＦが処理される場合、第１基板ＷＦの時間的変化のモニタ結果（図８：ステップＳＴ２６）に基づいて、第２基板ＷＦの時間的変化の予測範囲が、線Ｇｍｉｎおよび線Ｇｍａｘ（図１１）に示すように算出されてよい。例えば、第１基板ＷＦの線Ｇａｃｔの傾きに対して、予め定められた０より大きく１より小さい係数、および、予め定められた１より大きい係数のそれぞれを乗じることによって、線Ｇｍａｘおよび線Ｇｍｉｎの傾きが決定されてよい。その場合、もしも所定のタイミング（例えば、時間ｔ＝ｔａｃｔ）において第２基板ＷＦの線Ｇａｃｔが線Ｇｍａｘと線Ｇｍｉｎとの間の範囲から逸脱したときは、制御部７は作業者に対して警告を発することが好ましい。これにより、基板処理の進行速度が直前の基板処理に比して顕著に変動していることを作業者に警告することができる。また制御部７は、警告を発するだけでなく、基板ＷＦの連続的な処理を停止してもよい。 When the first substrate WF and the second substrate WF are processed as described above, the temporal change of the second substrate WF is based on the monitoring result of the temporal change of the first substrate WF (FIG. 8: step ST26). The prediction range may be calculated as shown in line Gmin and line Gmax (FIG. 11). For example, with respect to the slope of the line G act of the first substrate WF, predetermined 0 greater than a coefficient smaller than 1, and, by multiplying each coefficient larger than 1, which predetermined lines G max and line The slope of G min may be determined. In that case, if the predetermined timing (e.g., time t = t act) when line Gact the second substrate WF in deviates from the range between the lines G max and line G min, the control unit 7 to the operator It is preferable to issue a warning to it. As a result, it is possible to warn the operator that the progress speed of the substrate processing is significantly fluctuating as compared with the immediately preceding substrate processing. Further, the control unit 7 may not only issue a warning but also stop the continuous processing of the substrate WF.
　図１２は、実施の形態１における厚みプロファイルの測定の変形例を説明するグラフ図である。本変形例は、チップ領域ＲＳに設けられた、縦型パワーデバイスとなる構造が、トレンチゲート構造を有している場合に、特に好ましい。トレンチに対応して、被処理膜５０１の厚みプロファイルは、図示されているように、局所的に小さな値を有する。このような値を、後の算術処理における考慮から除外するため、本変形例においては、推定厚み（図１２の例においては１００μｍ）を基準として、予め定められた許容範囲内にある厚みのみが、厚みプロファイルに用いられる。言い換えれば、厚みプロファイルのうち、予め定められた許容範囲内にある厚みのみが、その後の算術処理（本実施の形態においては、図１３のステップＳＴ２２Ａ）に用いられる。推定厚みの情報は、入力部７６から受け付けられてよい。許容範囲は、例えば、推定厚みを基準として±２％であり、図１２の例においては９８μｍ以上１０２μｍ以下である。 FIG. 12 is a graph illustrating a modified example of the measurement of the thickness profile in the first embodiment. This modification is particularly preferable when the structure of the chip region RS, which is a vertical power device, has a trench gate structure. Corresponding to the trench, the thickness profile of the film 501 to be treated has a locally small value, as shown. In order to exclude such a value from consideration in the subsequent arithmetic processing, in this modified example, only the thickness within a predetermined allowable range is based on the estimated thickness (100 μm in the example of FIG. 12). , Used for thickness profile. In other words, of the thickness profiles, only the thickness within a predetermined allowable range is used for the subsequent arithmetic processing (in this embodiment, step ST22A of FIG. 13). Information on the estimated thickness may be received from the input unit 76. The permissible range is, for example, ± 2% based on the estimated thickness, and in the example of FIG. 12, it is 98 μm or more and 102 μm or less.
　＜実施の形態２＞
　本実施の形態２においても、前述した実施の形態１と同様、チップ領域ＲＳ（図５および図６）の各々には、半導体デバイスとなる構造が設けられている。ただし本実施の形態２においては、実施の形態１と異なり、半導体デバイスは非パワーデバイス（例えば、イメージセンサデバイス、メモリデバイス、およびロジックデバイスのいずれか）である。被処理膜５０１（図６）は、これら非パワーデバイスの製造過程において必要であるものの、最終的な製品としては不要なもの（例えば、最終的に必要となるデバイス構造を一時的に支持するために用いられるベース基板）である。そこで、本実施の形態における基板処理方法によって、被処理膜５０１は、できる限り除去されることが好ましい。被処理膜５０１が除去されることによって、半導体デバイスを小型化することができる。特にイメージセンサデバイスの受光面が面５０２ａ（図６）である場合、被処理膜５０１は光路を遮るので、その除去は感度を確保する上で重要である。一方で、基板処理が過度に進行すると、被処理膜５０１に覆われていたデバイス構造層５０２（図６）が意図せず侵食されてしまうことに起因しての、半導体デバイスの特性への悪影響が懸念される。そこで、被処理膜５０１の最小厚みｄｍｉｎが管理されることによって、上述した侵食を抑制することができる。侵食を十分に防ぐには、通常、最小厚みｄｍｉｎをゼロにまでは低減しないことが好ましい。ただし、デバイス構造層５０２の面５０２ａがエッチングストップ膜（例えば窒化シリコン膜）によって保護されている場合は、最小厚みｄｍｉｎをゼロにまで低減することが比較的容易に可能である。 <Embodiment 2>
Also in the second embodiment, as in the first embodiment described above, each of the chip regions RS (FIGS. 5 and 6) is provided with a structure serving as a semiconductor device. However, in the second embodiment, unlike the first embodiment, the semiconductor device is a non-power device (for example, any of an image sensor device, a memory device, and a logic device). The film 501 to be treated (FIG. 6) is necessary in the manufacturing process of these non-power devices, but is not necessary as a final product (for example, to temporarily support the device structure finally required). Base substrate used for). Therefore, it is preferable that the film 501 to be treated is removed as much as possible by the substrate treatment method in the present embodiment. By removing the film 501 to be processed, the semiconductor device can be miniaturized. In particular, when the light receiving surface of the image sensor device is the surface 502a (FIG. 6), the film 501 to be processed blocks the optical path, and its removal is important for ensuring sensitivity. On the other hand, if the substrate treatment proceeds excessively, the device structure layer 502 (FIG. 6) covered with the film 501 to be treated is unintentionally eroded, which adversely affects the characteristics of the semiconductor device. Is a concern. Therefore, by controlling the minimum thickness d min of the film 501 to be treated, the above-mentioned erosion can be suppressed. In order to adequately prevent erosion, it is usually preferable not to reduce the minimum thickness d min to zero. However, when the surface 502a of the device structure layer 502 is protected by an etching stop film (for example, a silicon nitride film), it is relatively easy to reduce the minimum thickness dmin to zero.
　基板処理方法において、前述した実施の形態１においては平均厚みｄａｖｇ（図９）が管理されるのに対して、本実施の形態２においては、上記理由から被処理膜５０１の最小の厚みｄｍｉｎが管理される。以下、主に実施の形態１における基板処理方法との相違について説明する。 In the substrate processing method, the average thickness davg (FIG. 9) is controlled in the above-described first embodiment, whereas in the second embodiment, the minimum thickness d of the film to be treated 501 is controlled for the above reason. min is managed. Hereinafter, differences from the substrate processing method according to the first embodiment will be mainly described.
　図１３は、本実施の形態２における基板処理方法の例を示すフローチャートである。ステップＳＴ２１までは実施の形態１と同様である。 FIG. 13 is a flowchart showing an example of the substrate processing method according to the second embodiment. The procedure up to step ST21 is the same as that of the first embodiment.
　次に制御部７による算術処理が行われる。具体的には、まず、厚みプロファイル（図１４）から最小厚みｄｍｉｎが算出される（図１３：ステップＳＴ２２Ｂ）。次に、厚み測定において特に着目される少なくとも１つの候補位置が抽出される（図８：ステップＳＴ２３Ｂ）。具体的には、厚みプロファイルが最小厚みｄｍｉｎを有する少なくとも１つの径方向位置ｒが、少なくとも１つの候補位置として抽出される。図１４に示された例においては、１つの位置ｒｍｉｎが抽出される。 Next, arithmetic processing is performed by the control unit 7. Specifically, first, the minimum thickness d min is calculated from the thickness profile (FIG. 14) (FIG. 13: step ST22B). Next, at least one candidate position of particular interest in the thickness measurement is extracted (FIG. 8: step ST23B). Specifically, at least one radial position r whose thickness profile has a minimum thickness d min is extracted as at least one candidate position. In the example shown in FIG. 14, one position r min is extracted.
　次に、測定位置の決定（図８：ステップＳＴ２４）が行われる。具体的には、少なくとも１つの候補位置の少なくともいずれかが、少なくとも１つの測定位置に決定される。図１４の例においては、１つの候補位置ｒｍｉｎしか抽出されていないので、これがそのまま測定位置に決定される。なお、厚みｄの有効数字等によっては、複数の候補位置が抽出される可能性があり、その場合、実施の形態１で説明した方法と同様の方法によって、それらの中から少なくとの１つの測定位置が適宜選択されてよい。次に、実施の形態１と同様に、処理液の供給の開始（図８：ステップＳＴ２５）と、厚みの時間的変化のモニタ（図８：ステップＳＴ２６）とが行われる。 Next, the measurement position is determined (FIG. 8: step ST24). Specifically, at least one of at least one candidate position is determined to be at least one measurement position. In the example of FIG. 14, since only one candidate position r min is extracted, this is determined as it is as the measurement position. In addition, there is a possibility that a plurality of candidate positions may be extracted depending on the significant figures of the thickness d, and in that case, at least one of them may be extracted by the same method as that described in the first embodiment. The measurement position may be appropriately selected. Next, as in the first embodiment, the start of supply of the treatment liquid (FIG. 8: step ST25) and the monitoring of the temporal change in thickness (FIG. 8: step ST26) are performed.
　次に、処理液の供給の停止が行われる（図８：ステップＳＴ２７）。具体的には、少なくとも１つの測定位置（図１４の例においては位置ｒｍｉｎ）での被処理膜５０１の厚みに基づいて、基板ＷＦの表面上への処理液の供給が停止される。ステップＳＴ２７は、少なくとも１つの測定位置で被処理膜５０１の厚みが１０μｍ以下に低減されるように行われることが好ましく、例えば４μｍ程度に低減される。なお、処理液の供給の停止のタイミングは、図１１を参照して実施の形態１において説明した方法と同様の方法によって決定されてよい。 Next, the supply of the treatment liquid is stopped (FIG. 8: step ST27). Specifically, the supply of the treatment liquid onto the surface of the substrate WF is stopped based on the thickness of the film 501 to be treated at at least one measurement position (position r min in the example of FIG. 14). Step ST27 is preferably performed so that the thickness of the film 501 to be processed is reduced to 10 μm or less at at least one measurement position, and is reduced to, for example, about 4 μm. The timing of stopping the supply of the treatment liquid may be determined by the same method as that described in the first embodiment with reference to FIG.
　以降、実施の形態１と同様にステップＳＴ３１、ステップ３２およびステップＳ４１が行われることによって、本実施の形態の基板処理が行われる。なお、上記において特に記載した特徴以外は、上述した実施の形態１とほぼ同じであるため、その説明を繰り返さない。 After that, the substrate processing of the present embodiment is performed by performing steps ST31, step 32, and step S41 in the same manner as in the first embodiment. It should be noted that the description is not repeated because it is almost the same as the above-described first embodiment except for the features particularly described above.
　なお、実施の形態１および２のいずれも、図７に示されたシーケンスに沿って実施可能であるが、本発明の基板処理方法はこのシーケンスに限定されるものではない。例えば、図１５に示すように、厚みプロファイルの測定がリンス処理中に行われてもよく、それにより処理時間を短縮することができる。 Although both of the first and second embodiments can be carried out according to the sequence shown in FIG. 7, the substrate processing method of the present invention is not limited to this sequence. For example, as shown in FIG. 15, the thickness profile measurement may be performed during the rinsing process, which can reduce the processing time.
　以上に記載された実施の形態では、それぞれの構成要素の材質、材料、寸法、形状、相対的配置関係または実施の条件などについても記載する場合があるが、これらはすべての局面においてひとつの例であって、本願明細書に記載されたものに限られることはないものとする。したがって、例が示されていない無数の変形例、および、均等物が、本願明細書に開示される技術の範囲内において想定される。例えば、少なくとも１つの構成要素を変形する場合、追加する場合または省略する場合が含まれるものとする。 In the embodiments described above, the materials, materials, dimensions, shapes, relative arrangement relationships, implementation conditions, etc. of each component may also be described, but these are one example in all aspects. However, it is not limited to those described in the present specification. Therefore, innumerable variants and equivalents for which examples are not shown are envisioned within the scope of the techniques disclosed herein. For example, it is assumed that at least one component is modified, added or omitted.
　また、以上に記載された実施の形態で記載されたそれぞれの構成要素は、ソフトウェアまたはファームウェアとしても、それと対応するハードウェアとしても想定され、その双方の概念において、それぞれの構成要素は「部」または「処理回路」(ｃｉｒｃｕｉｔｒｙ)などと称される。 In addition, each component described in the above-described embodiment is assumed to be software or firmware and corresponding hardware, and in both concepts, each component is a "part". Alternatively, it is referred to as a "processing circuit" or the like.
　１　　　　　：基板処理装置
　７　　　　　：制御部
　３４Ａ　　　：液処理ユニット
　５２　　　　：処理液ノズル
　７６　　　　：入力部
　７７　　　　：表示部
　８１　　　　：センサ
　５０１　　　：被処理膜
　５０２　　　：デバイス構造層
　５１１　　　：処理液回収ガード
　５１３　　　：排液口
　ＲＳ　　　　：チップ領域
　ＷＦ　　　　：基板 1: Substrate processing device 7: Control unit 34A: Liquid processing unit 52: Processing liquid nozzle 76: Input unit 77: Display unit 81: Sensor 501: Processed film 502: Device structure layer 511: Processing liquid recovery guard 513: Drainage Mouth RS: Chip area WF: Substrate

Claims (19)

  1. 　径方向を有し、パワーデバイスとなる構造が設けられた複数のチップ領域を有し、被処理膜が設けられた少なくとも１つの基板を処理する基板処理方法であって、
    　（ａ）　前記基板を回転させながら、前記径方向においてセンサをスキャンさせることによって、前記径方向における前記被処理膜の厚みプロファイルを測定する工程と、
    　（ｂ）　前記厚みプロファイルの平均厚みを算出する工程と、
    　（ｃ）　前記厚みプロファイルが前記平均厚みを有する少なくとも１つの径方向位置を、少なくとも１つの候補位置として抽出する工程と、
    　（ｄ）　前記少なくとも１つの候補位置の少なくともいずれかを、少なくとも１つの測定位置に決定する工程と、
    　（ｅ）　前記基板を回転させながら、前記基板の前記被処理膜上へノズルから処理液を供給する工程と、
    　（ｆ）　前記基板を回転させながら、前記センサによって前記少なくとも１つの測定位置で前記被処理膜の厚みの時間的変化をモニタする工程と、
    を備える、基板処理方法。     A substrate processing method for processing at least one substrate having a radial direction, having a plurality of chip regions provided with a structure serving as a power device, and provided with a film to be processed.
    (A) A step of measuring the thickness profile of the film to be processed in the radial direction by scanning the sensor in the radial direction while rotating the substrate.
    (B) A step of calculating the average thickness of the thickness profile and
    (C) A step of extracting at least one radial position in which the thickness profile has the average thickness as at least one candidate position.
    (D) A step of determining at least one of the at least one candidate position as at least one measurement position, and
    (E) A step of supplying a processing liquid from a nozzle onto the film to be processed on the substrate while rotating the substrate.
    (F) A step of monitoring the temporal change in the thickness of the film to be processed by the sensor at at least one measurement position while rotating the substrate.
    A substrate processing method.
  2. 　請求項１に記載の基板処理方法であって、
    　（ｇ）　前記少なくとも１つの測定位置での前記被処理膜の厚みに基づいて、前記基板の表面上への処理液の供給を停止する工程
    をさらに備える、基板処理方法。     The substrate processing method according to claim 1.
    (G) A substrate processing method further comprising a step of stopping the supply of a processing liquid onto the surface of the substrate based on the thickness of the film to be processed at at least one measurement position.
  3. 　請求項２に記載の基板処理方法であって、
    　前記工程（ｇ）は、前記少なくとも１つの測定位置で前記被処理膜の厚みが２０μｍ以上に保たれるように行われる、基板処理方法。     The substrate processing method according to claim 2.
    The substrate processing method, wherein the step (g) is performed so that the thickness of the film to be processed is maintained at 20 μm or more at at least one measurement position.
  4. 　請求項１から３のいずれか１項に記載の基板処理方法であって、
    　前記工程（ｅ）において、前記ノズルに前記径方向における周期的変位が与えられ、
    　前記工程（ｆ）において、前記センサに前記径方向における周期的変位が与えられ、前記センサが前記基板の中心に最も近づくタイミングは、前記ノズルが前記基板の中心に最も近づくタイミングと異なっている、基板処理方法。     The substrate processing method according to any one of claims 1 to 3.
    In the step (e), the nozzle is given a periodic displacement in the radial direction.
    In the step (f), the sensor is given a periodic displacement in the radial direction, and the timing at which the sensor is closest to the center of the substrate is different from the timing at which the nozzle is closest to the center of the substrate. Substrate processing method.
  5. 　請求項１から４のいずれか１項に記載の基板処理方法であって、
    　前記少なくとも１つの基板は第１基板および第２基板を含み、前記基板処理方法は、前記工程（ａ）から前記工程（ｆ）を行うことによって前記第１基板を処理した後に、前記工程（ａ）から前記工程（ｆ）を再度行うことによって前記第２基板を処理する基板処理方法であり、
    　前記第１基板のための前記工程（ｅ）における前記処理液の少なくとも一部が、前記第２基板のための前記工程（ｅ）における前記処理液として再利用される、基板処理方法。     The substrate processing method according to any one of claims 1 to 4.
    The at least one substrate includes a first substrate and a second substrate, and the substrate processing method comprises processing the first substrate by performing the steps (a) to (f), and then the step (a). ) To process the second substrate by performing the step (f) again.
    A substrate processing method in which at least a part of the treatment liquid in the step (e) for the first substrate is reused as the treatment liquid in the step (e) for the second substrate.
  6. 　請求項５に記載の基板処理方法であって、
    　前記第２基板は前記第１基板の直後に処理される基板であり、
    　前記第１基板の前記工程（ｆ）の結果に基づいて、前記第２基板の前記工程（ｆ）における前記時間的変化の予測範囲を算出する工程をさらに備える、基板処理方法。     The substrate processing method according to claim 5.
    The second substrate is a substrate to be processed immediately after the first substrate.
    A substrate processing method further comprising a step of calculating a predicted range of the temporal change in the step (f) of the second substrate based on the result of the step (f) of the first substrate.
  7. 　請求項１から６のいずれか１項に記載の基板処理方法であって、
    　前記基板は半径Ｒを有しており、
    　前記工程（ｄ）において、０＜ｒＬ＜ｒＵ＜Ｒを満たす正の値ｒＬおよびｒＵが予め定められており、前記測定位置はｒＬ以上ｒＵ以下に制限される、
    基板処理方法。     The substrate processing method according to any one of claims 1 to 6.
    The substrate has a radius R and has a radius R.
    In the step (d), positive values r L and r U satisfying 0 <r L <r U <R are predetermined, and the measurement position is limited to r L or more and r U or less.
    Substrate processing method.
  8. 　請求項１から７のいずれか１項に記載の基板処理方法であって、
    　前記工程（ｄ）は、
    　（ｄ１）　前記少なくとも１つの候補位置を表示する工程と、
    　（ｄ２）　前記少なくとも１つの候補位置のうちいずれを前記少なくとも１つの測定位置に決定するかの指示を受け付ける工程と、
    を含む、基板処理方法。     The substrate processing method according to any one of claims 1 to 7.
    The step (d) is
    (D1) The step of displaying at least one candidate position and
    (D2) A step of receiving an instruction as to which of the at least one candidate position is determined as the at least one measurement position, and
    Substrate processing methods, including.
  9. 　請求項１から８のいずれか１項に記載の基板処理方法であって、
    　前記工程（ａ）は、
    　（ａ１）　前記被処理膜の推定厚みの情報を受け付ける工程
    を含み、
    　前記工程（ａ）において、前記推定厚みを基準として、予め定められた許容範囲内にある厚みのみが、前記厚みプロファイルに用いられる、基板処理方法。     The substrate processing method according to any one of claims 1 to 8.
    The step (a) is
    (A1) Including a step of receiving information on the estimated thickness of the film to be treated.
    A substrate processing method in which, in the step (a), only a thickness within a predetermined allowable range is used for the thickness profile based on the estimated thickness.
  10. 　請求項９に記載の基板処理方法であって、
    　前記パワーデバイスはトレンチゲート構造を有している、基板処理方法。     The substrate processing method according to claim 9.
    A substrate processing method in which the power device has a trench gate structure.
  11. 　径方向を有し、非パワーデバイスである半導体デバイスとなる構造が設けられた複数のチップ領域を有し、被処理膜が設けられた少なくとも１つの基板を処理する基板処理方法であって、
    　（ａ）　前記基板を回転させながら、前記径方向においてセンサをスキャンさせることによって、前記径方向における前記被処理膜の厚みプロファイルを測定する工程と、
    　（ｂ）　前記厚みプロファイルの最小厚みを算出する工程と、
    　（ｃ）　前記厚みプロファイルが前記最小厚みを有する少なくとも１つの径方向位置を、少なくとも１つの候補位置として抽出する工程と、
    　（ｄ）　前記少なくとも１つの候補位置の少なくともいずれかを、少なくとも１つの測定位置に決定する工程と、
    　（ｅ）　前記基板を回転させながら、前記基板の前記被処理膜上へノズルから処理液を供給する工程と、
    　（ｆ）　前記基板を回転させながら、前記センサによって前記少なくとも１つの測定位置で前記被処理膜の厚みの時間的変化をモニタする工程と、
    を備える、基板処理方法。     A substrate processing method for processing at least one substrate having a plurality of chip regions having a radial direction and having a structure to be a semiconductor device which is a non-power device and provided with a film to be processed.
    (A) A step of measuring the thickness profile of the film to be processed in the radial direction by scanning the sensor in the radial direction while rotating the substrate.
    (B) A step of calculating the minimum thickness of the thickness profile and
    (C) A step of extracting at least one radial position in which the thickness profile has the minimum thickness as at least one candidate position.
    (D) A step of determining at least one of the at least one candidate position as at least one measurement position, and
    (E) A step of supplying a processing liquid from a nozzle onto the film to be processed on the substrate while rotating the substrate.
    (F) A step of monitoring the temporal change in the thickness of the film to be processed by the sensor at at least one measurement position while rotating the substrate.
    A substrate processing method.
  12. 　請求項１１に記載の基板処理方法であって、
    　（ｇ）　前記少なくとも１つの測定位置での前記被処理膜の厚みに基づいて、前記基板の表面上への処理液の供給を停止する工程
    をさらに備える、基板処理方法。     The substrate processing method according to claim 11.
    (G) A substrate processing method further comprising a step of stopping the supply of a processing liquid onto the surface of the substrate based on the thickness of the film to be processed at at least one measurement position.
  13. 　請求項１２に記載の基板処理方法であって、
    　前記工程（ｇ）は、前記少なくとも１つの測定位置で前記被処理膜の厚みが１０μｍ以下に低減されるように行われる、基板処理方法。     The substrate processing method according to claim 12.
    The substrate processing method, wherein the step (g) is performed so that the thickness of the film to be processed is reduced to 10 μm or less at at least one measurement position.
  14. 　請求項１１から１３のいずれか１項に記載の基板処理方法であって、
    　前記工程（ｅ）において、前記ノズルに前記径方向における周期的変位が与えられ、
    　前記工程（ｆ）において、前記センサに前記径方向における周期的変位が与えられ、前記センサが前記基板の中心に最も近づくタイミングは、前記ノズルが前記基板の中心に最も近づくタイミングと異なっている、基板処理方法。     The substrate processing method according to any one of claims 11 to 13.
    In the step (e), the nozzle is given a periodic displacement in the radial direction.
    In the step (f), the sensor is given a periodic displacement in the radial direction, and the timing at which the sensor is closest to the center of the substrate is different from the timing at which the nozzle is closest to the center of the substrate. Substrate processing method.
  15. 　請求項１１から１４のいずれか１項に記載の基板処理方法であって、
    　前記少なくとも１つの基板は第１基板および第２基板を含み、前記基板処理方法は、前記工程（ａ）から前記工程（ｆ）を行うことによって前記第１基板を処理した後に、前記工程（ａ）から前記工程（ｆ）を再度行うことによって前記第２基板を処理する基板処理方法であり、
    　前記第１基板のための前記工程（ｅ）における前記処理液の少なくとも一部が、前記第２基板のための前記工程（ｅ）における前記処理液として再利用される、基板処理方法。     The substrate processing method according to any one of claims 11 to 14.
    The at least one substrate includes a first substrate and a second substrate, and the substrate processing method comprises processing the first substrate by performing the steps (a) to (f), and then the step (a). ) To process the second substrate by performing the step (f) again.
    A substrate processing method in which at least a part of the treatment liquid in the step (e) for the first substrate is reused as the treatment liquid in the step (e) for the second substrate.
  16. 　請求項１５に記載の基板処理方法であって、
    　前記第２基板は前記第１基板の直後に処理される基板であり、
    　前記第１基板の前記工程（ｆ）の結果に基づいて、前記第２基板の前記工程（ｆ）における前記時間的変化の予測範囲を算出する工程をさらに備える、基板処理方法。     The substrate processing method according to claim 15.
    The second substrate is a substrate to be processed immediately after the first substrate.
    A substrate processing method further comprising a step of calculating a predicted range of the temporal change in the step (f) of the second substrate based on the result of the step (f) of the first substrate.
  17. 　請求項１１から１６のいずれか１項に記載の基板処理方法であって、
    　前記基板は半径Ｒを有しており、
    　前記工程（ｄ）において、０＜ｒＬ＜ｒＵ＜Ｒを満たす正の値ｒＬおよびｒＵが予め定められており、前記測定位置はｒＬ以上ｒＵ以下に制限される、
    基板処理方法。     The substrate processing method according to any one of claims 11 to 16.
    The substrate has a radius R and has a radius R.
    In the step (d), positive values r L and r U satisfying 0 <r L <r U <R are predetermined, and the measurement position is limited to r L or more and r U or less.
    Substrate processing method.
  18. 　請求項１１から１７のいずれか１項に記載の基板処理方法であって、
    　前記工程（ｄ）は、
    　（ｄ１）　前記少なくとも１つの候補位置を表示する工程と、
    　（ｄ２）　前記少なくとも１つの候補位置のうちいずれを前記少なくとも１つの測定位置に決定するかの指示を受け付ける工程と、
    を含む、基板処理方法。     The substrate processing method according to any one of claims 11 to 17.
    The step (d) is
    (D1) The step of displaying at least one candidate position and
    (D2) A step of receiving an instruction as to which of the at least one candidate position is determined as the at least one measurement position, and
    Substrate processing methods, including.
  19. 　請求項１１から１８のいずれか１項に記載の基板処理方法であって、
    　前記半導体デバイスは、イメージセンサデバイス、メモリデバイス、およびロジックデバイスのいずれかである、基板処理方法。     The substrate processing method according to any one of claims 11 to 18.
    A substrate processing method in which the semiconductor device is any of an image sensor device, a memory device, and a logic device.
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