JP3621820B2 - Substrate processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus for performing a process such as an etching process on a substrate (hereinafter referred to as “substrate”) such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display, a substrate for an optical disk, etc. About.
[0002]
[Prior art]
In a substrate cleaning apparatus which is an example of a substrate processing apparatus, there is one that performs chemical processing using various chemical solutions in addition to cleaning processing using pure water. An etching process using an etchant as a process liquid is one of the chemical liquid processes.
[0003]
In this etching process, it is necessary to manage the thickness of the substrate. Conventionally, the film thickness is managed by controlling the etching time by utilizing the fact that the etching amount per unit time, that is, the etching rate is kept almost constant under a certain condition. And after taking out a board | substrate from an etching processing apparatus, it carries in to the measuring apparatus provided separately, the film thickness after an etching process is measured, and etching amount, the uniformity of etching, etc. are desired based on this measurement result It was confirmed whether it became the result of. Note that this film thickness measurement is performed about once every several to several hundred etching processes, and is not performed for all etching processes.
[0004]
If the desired result is not obtained, the processing conditions such as the chemical concentration, temperature, and etching time are adjusted according to the result, and are reflected in the subsequent etching processing.
[0005]
[Problems to be solved by the invention]
However, in the conventional film thickness management, since the film thickness is measured after the etching process is completed, more appropriate processing conditions are only reflected in the subsequent etching processes. Therefore, when the etching process is inappropriate, the substrate itself that has been the object of the previous etching process may become a defective product. Even when the product does not become defective, additional processing may be required. Therefore, in these cases, there is a problem that a large amount of defect costs, time loss due to additional processing, and an increase in manufacturing costs occur.
[0006]
In addition, with the recent miniaturization of devices, the demand for film thickness has become stricter, and more accurate film thickness management is required.
[0007]
Accordingly, in view of the above problems, the present invention has an object to provide a substrate processing apparatus capable of obtaining a favorable processing result with respect to a desired target value in substrate processing accompanied by film thickness change such as etching processing. To do.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, a substrate processing apparatus according to claim 1 is a substrate processing apparatus that performs a predetermined process on a substrate having a film formed on a surface thereof, and is a translucent member constituted by a translucent member. Having a conductive side wall and immersing the substrateetchingFor processingetchingTreatment liquidTheStorageDoA treatment tank;A pipe for supplying a processing liquid for supplying an etching processing liquid and pure water to the processing tank;A film thickness measuring means for measuring the thickness of a film formed on the surface of the substrate immersed in the processing liquid of the processing tank, having a plurality of measuring ends provided on the outer side of the translucent side wall; , Measured by the film thickness measuring meanspluralBased on film thickness measurement resultsWhen it is determined that the etching process should be continued, the etching process is continued, and when it is determined that the etching process should be terminated, pure water is supplied from the processing liquid supply pipe.And a control means.
[0009]
The substrate processing apparatus according to claim 2 is a substrate processing apparatus for performing a predetermined process on a substrate having a film formed on a surface thereof, and has a translucent side wall portion made of a translucent member. For immersing the substrate and performing a process with a change in film thicknessetchingTreatment liquidTheStorageDoThickness measurement for measuring the thickness of the film formed on the surface of the substrate immersed in the treatment liquid in the treatment tank, having a measurement end disposed outside the treatment tank and the translucent side wall Measured by means, a driving means for moving the measuring end along the outer surface of the translucent side wall, and the film thickness measuring meanspluralBased on film thickness measurement resultsWhen it is determined that the etching process should be continued, the etching process is continued, and when it is determined that the etching process should be terminated, pure water is supplied from the processing liquid supply pipe.And a control means.
[0010]
AlsoThe substrate processing apparatus according to claim 3 is the substrate processing apparatus according to claim 2, wherein the driving unit moves the measurement end in the vertical direction along the outer surface of the translucent side wall. And a second driving means for moving the measurement end in the horizontal direction along the outer side surface of the translucent side wall portion.
A substrate processing apparatus according to a fourth aspect is the substrate processing apparatus according to any one of the first to third aspects, wherein the control means determines when to shift from the etching process to the pure water process. Is characterized by using an average value at a plurality of measurement points.
Further, the substrate processing apparatus according to claim 5 is the substrate processing apparatus according to any one of claims 1 to 3, wherein the control means determines the time of transition from the etching process to the pure water process. Is characterized in that any one of the measurement results at a plurality of measurement points reaches a predetermined etching amount.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0012]
<A. First Embodiment>
<Overview of the entire substrate processing apparatus>
FIG. 1 is a perspective view showing the configuration of the substrate processing apparatus of the present embodiment. As shown in the figure, this apparatus has a cassette carrying-in section 2 into which a cassette C storing unprocessed substrates is loaded, and a cassette C from the cassette carrying-in section 2 is placed, and a plurality of substrates are simultaneously taken out from the inside. A substrate take-out unit 3, a substrate processing unit 5 in which unprocessed substrates taken out from the cassette C are sequentially cleaned, and a substrate storage unit 7 in which a plurality of processed substrates after cleaning are simultaneously stored in the cassette And a cassette carry-out section 8 from which a cassette C storing processed substrates is dispensed. Further, on the front side of the apparatus, a substrate transport mechanism 9 is arranged from the substrate take-out unit 3 to the substrate storage unit 7, and this substrate transport mechanism 9 is arranged before the cleaning process, during the cleaning process, and after the cleaning process. The substrate is transferred from one place to another.
[0013]
The cassette carry-in unit 2 includes a cassette transfer robot CR1 that can move horizontally, move up and down, and rotate around a vertical axis. A pair of cassettes C placed at predetermined positions on the cassette stage 2a is placed on the substrate takeout unit 3. Transfer.
[0014]
The substrate extraction unit 3 includes a pair of holders 3a and 3b that move up and down. Guide grooves are formed on the upper surfaces of the holders 3a and 3b, and support the unprocessed substrates in the cassette C vertically and parallel to each other. Therefore, when the holders 3a and 3b are raised, the substrate is taken out from the cassette C. The substrate taken out from the cassette C is transferred to the transfer robot TR provided in the substrate transfer mechanism 9, and is loaded into the substrate processing unit 5 after the horizontal movement.
[0015]
The substrate processing unit 5 performs a chemical solution processing unit 52 including a chemical solution tank CB for storing a chemical solution, a water washing processing unit 54 including a water washing tank WB for storing pure water, and various chemical processing and water washing processes in a single tank. And a multi-function processing unit 56 including a multi-function processing tank 562 to perform.
[0016]
In the substrate processing unit 5, a first substrate immersion mechanism 55 is disposed on the rear side of the chemical processing unit 52 and the water washing processing unit 54, and the transfer robot TR is moved by a lifter head LH 1 that can be moved up and down and traversed. The board | substrate received from I was immersed in the chemical | medical solution tank CB of the chemical | medical solution process part 52, or was immersed in the water washing tank WB of the water washing process part 54. FIG. In addition, a second substrate immersion mechanism 57 is disposed on the rear side of the multi-function processing unit 56, and a substrate received from the transport robot TR is received by a lifter head 563a that can be moved up and down provided in the second substrate immersion mechanism 57. It supports in the multifunctional processing tank 562 of the multifunctional processing part 56. FIG.
[0017]
The substrate storage unit 7 has the same structure as the substrate take-out unit 3 and receives a processed substrate gripped by the transport robot TR and stores it in the cassette C by a pair of liftable holders 7a and 7b.
[0018]
The cassette carry-out unit 8 has a structure similar to that of the cassette carry-in unit 2 and includes a movable cassette transfer robot CR2. A pair of cassettes placed on the substrate storage unit 7 is placed on the cassette stage 8a. Transfer to a predetermined position.
[0019]
The substrate transport mechanism 9 includes a transport robot TR that can move horizontally and move up and down. The substrate supported by the holders 3a and 3b of the substrate take-out unit 3 is transferred to the first substrate immersion mechanism of the substrate processing unit 5 while the pair of rotatable hands 91 and 92 provided in the transfer robot TR holds the substrate. 55 is transferred to the side of the lifter head LH1, provided on the second substrate immersion mechanism 57 is transferred from the side of the lifter head LH1 to the side of the lifter head 563a, and the holder 7a of the substrate storage unit 7 is transferred from the side of the lifter head 563a. , 7b.
[0020]
In the substrate processing apparatus having the schematic configuration as described above, various processes can be performed. Hereinafter, the case where the multi-function processing unit 56 performs the etching process will be described. Note that the etching process is exemplarily shown as one of the processes involving a change in the thickness of the film formed on the surface of the substrate. The present invention can be applied.
[0021]
<Configuration of multi-function processing unit>
2 and 3 are a cross-sectional view and a vertical cross-sectional view of the multi-function processing unit 56, respectively. First, the mechanical configuration will be described with reference to these drawings.
[0022]
The multi-function processing unit 56 mainly includes a casing 560, a shutter 561, a multi-function processing tank 562, a lifter 563, and a lifter driving unit 564.
[0023]
The casing 560 includes a substrate carry-in / out port TO on the upper surface, and a seal member 560a is fixed to the periphery thereof. Further, an exhaust pipe 560b is provided on the bottom surface.
[0024]
The shutter 561 includes a shielding plate 561a and a guide 561b provided at the upper end of the side surface of the casing 560 so as to sandwich the shielding plate 561a. The shielding plate 561a slightly moves up and down along the guide rail of the guide 561b and slides in the horizontal direction. It opens and closes. In addition, airtightness in the casing 560 is maintained in the closed state by the seal member 560a provided on the upper surface of the casing 560.
[0025]
The multi-function treatment tank 562 can be sequentially filled with hydrofluoric acid (HF) and pure water (DIW) (hereinafter, collectively referred to as “treatment liquid”), and the substrate W is immersed in each of them to perform etching treatment. And a cleaning process is performed.
[0026]
Further, a return pipe 562c for processing liquid, a pipe 562d for waste liquid, and a pipe 562e for supplying processing liquid are connected to the bottom surface of the multi-function processing tank 562. Furthermore, a processing liquid recovery groove 562a is provided at the upper end of the outer surface of each of the four sides of the multifunction processing tank 562, and a processing liquid recovery pipe 562b is connected to the processing liquid recovery groove 562a.
[0027]
The lifter 563 includes three substrate guides 563c between the lifter head 563a and the holding plate 563b. Each substrate guide 563c has a large number of holding grooves for holding the substrate W, and holds a plurality of substrates in the holding grooves. As will be described later, a process such as etching is simultaneously performed on a plurality of substrates arranged and held by the substrate guide 563c.
[0028]
The lifter driving unit 564 includes a servo motor 564a and a timing belt (not shown), and drives a shaft 564b connected to the timing belt in a vertical direction that is a longitudinal direction thereof. Furthermore, since the upper end of the shaft 564b is connected to the lifter 563, the lifter 563 can be moved up and down in the vertical direction by driving the servo motor 564a. Therefore, the substrate W is held by the lifter 563, and the lifter 563 is moved up and down by the drive of the lifter driving unit 564, whereby the substrate W is moved up and down, as shown in FIG. The substrate W is moved to the immersion position DP in the processing liquid L.
[0029]
In addition, a plurality of measurement ends ME are arranged on the side wall surface of the multifunction processing tank 562. As shown in FIG. 3, these measurement ends ME are provided on the side wall surface of the multifunction processing tank 562 so as to face different positions of the substrate W. The side wall member of the multi-function processing tank 562 is made of a translucent member such as quartz so as not to affect the measurement of the film thickness. Furthermore, each measurement end ME is connected to the corresponding film thickness measuring instrument TM via the optical fiber OPL and the through joint TC. Each film thickness measuring instrument TM measures the film thickness at each measurement point by using the interference of light projected and received via each measurement end ME. With such a measurement system, the film thickness at each measurement point on the substrate corresponding to each measurement end ME can be measured. The through joint TC plays a role of sealing the chemical atmosphere in the casing 560.
[0030]
By providing the measuring end ME of the film thickness measuring instrument TM in the multi-function processing tank 562, the film thickness during the etching process is measured in real time (IN-SITU) in real time as will be described in detail below. Is possible. This is one of the features of the present invention. This feature makes it possible to control the film thickness with high accuracy with respect to a desired target value without being affected by various fluctuation factors.
[0031]
<Control of multi-function processor>
With reference to FIGS. 4 and 5, the etching process in the multi-function processing unit 56 will be described. 4 is a conceptual diagram showing a schematic configuration of a control system of the multi-function processing unit 56, and FIG. 5 is a schematic diagram showing a peripheral structure of the multi-function processing unit 56. As shown in FIG.
[0032]
As shown in FIG. 4, the control unit CTS of the multi-function processing unit 56 controls the valve system VS, the transport system TS, the measurement system MS, and the like.
[0033]
The valve system VS includes a three-way valve V1 and valves V2 to V5 as shown in FIG. The control unit CTS is electrically connected to each of the valves V1 to V5, and can switch the flow path of the three-way valve V1 to open and close the valves V2 to V5.
[0034]
The transport system TS is a system including a lifting operation of the lifter 563 by the lifter driving unit 564 and a delivery operation of the substrate W with the transport robot TR. These operations are controlled by the control unit CTS in accordance with the progress of processing.
[0035]
The measurement system MS is a film thickness measurement system connected to the film thickness measuring instrument TM from the measurement end ME via the optical fiber OPL. The control unit CTS can appropriately change the processing of the valve system VS according to the result measured by the film thickness measuring instrument TM.
[0036]
<Etching process>
As described above, the multi-function processing unit 56 is controlled by the control unit CTS, and the etching process is performed as follows.
[0037]
First, the valve V <b> 3 is opened, and hydrofluoric acid is supplied from the hydrofluoric acid supply source 565 to the multi-function treatment tank 562. When the liquid level reaches a predetermined height, the supply of hydrofluoric acid is stopped.
[0038]
Thereafter, the substrate W held by the lifter 563 and positioned at the position TP in FIG. 2 is lowered by the lifter driving unit 564 and immersed in an aqueous solution of hydrofluoric acid in the multi-function treatment tank 562. The hydrofluoric acid functions as an etching treatment liquid L, and an etching process is performed on a film to be etched (hereinafter referred to as “etching layer”) such as SiO 2 on the surface of the substrate W. As the etching process proceeds, the film thickness of the etching layer decreases.
[0039]
The purpose of this process is to perform etching so that the thickness of the etching layer matches a predetermined target value. This is to perform etching so that the difference in film thickness before and after the etching process, that is, the etching amount matches the target value.
[0040]
In order to achieve such an object, the substrate processing apparatus of the present embodiment measures the film thickness of the etching layer formed on the surface of the substrate even during the etching process. On the other hand, conventionally, the measurement of the film thickness of the etching layer of the substrate is performed only before and after the etching process, and not during the etching process. In this respect, the substrate processing apparatus of the present embodiment is greatly different from the conventional method.
[0041]
In the substrate processing apparatus of this embodiment, the film thickness of the substrate during the etching process is measured at a predetermined measurement point by using a plurality of measurement ends ME provided in the above-described multifunctional processing tank 562. The substrate to be measured is the substrate closest to the measurement end ME among the plurality of substrates held by the lifter 563. These measurements are performed in real time during the etching process, and the measurement results are used as follows.
[0042]
In order to control the etching amount of the substrate, the control unit CTS determines whether the etching process should be continued or ended based on the measurement result at each measurement point. If it is determined that the etching process should be continued, the process is continued. If it is determined that the etching process should be terminated, the process proceeds from the etching process to the next cleaning process using pure water. Start. In the cleaning process using pure water, the etching process stops when the etching process liquid adhering to the substrate W is removed.
[0043]
In determining whether or not to start the above processing transition, it is possible to use whether or not the etching amount has reached a predetermined target value. In order to more accurately manage the film thickness, it is preferable to consider the amount of etching that proceeds until the etching solution is removed. This is because the etching process may proceed until the etching process liquid is completely removed in the next cleaning process. In order to cope with this, it is possible to determine that the transition from the etching process to the cleaning process should be started when the etching amount reaches a reference value obtained by subtracting a predetermined amount from the target value. is there. Alternatively, it is also possible to predict and determine the time point at which the process transition should be started based on the time required until the etching process liquid removal after the process transition starts and the actual etching rate calculated from the measurement result. .
[0044]
As described above, the substrate processing apparatus of this embodiment performs film thickness measurement in real time and on the spot (IN-SITU). Further, the etching amount of the substrate itself being processed is directly controlled based on the measurement result. Therefore, the etching amount can be controlled with very high accuracy.
[0045]
In the conventional apparatus, after the substrate is taken out from the substrate processing apparatus after the etching process is completed, the thickness of the etching layer is measured to check whether the etching amount matches a predetermined target value. However, this is used for the etching process after the next time, and the measurement is not used for the etching process. Further, the above measurement was performed at intervals of about once every several to several hundreds of all etching processes. Therefore, in order to specify at which point in time from the previous measurement to the current measurement the processing failure has occurred, it is necessary to measure those processed substrates again. Based on the result obtained by the measurement including such re-measurement, the judgment about the etching failure can be obtained. If the final measurement result reveals that the etching amount is excessive, the substrate to be processed in the processing after the occurrence of the defect may become a defective product. In addition, when the etching amount is insufficient, an additional etching process is required, which may result in a time loss for resetting the etching process conditions.
[0046]
On the other hand, the substrate processing apparatus of this embodiment can accurately control the film thickness of the substrate itself during the etching process as described above. Therefore, the possibility of defective products is reduced, and negative factors such as cost increase and time loss due to defective products are eliminated. Therefore, the yield is improved, and highly efficient production can be performed.
[0047]
In the conventional apparatus, the etching amount is indirectly controlled by managing the etching time and the like. This utilizes the fact that the etching rate becomes constant by controlling the chemical solution concentration, temperature, and the like to be a predetermined constant value.
[0048]
Therefore, in order to manage the film thickness with high accuracy, it is necessary to control indirect control amounts such as the concentration and temperature of the etching processing solution with high accuracy. If these indirect control amounts deviate from the target value, the magnitude of the etching rate deviates from the target value. Even if this deviation in etching rate is slight, it will appear as a large deviation in etching amount as time passes. Therefore, it is necessary to make the etching rate accurately follow the target value by accurately controlling the indirect control amount. However, it is a very difficult problem to accurately control the indirect control amount. For example, when it is necessary to control the flow rate to adjust the concentration, etc., not only the opening and closing of the valve, but also other fluctuation factors such as the time-dependent conductance of the device and piping system are required for the flow rate control. It is also necessary to consider fluctuations.
[0049]
Furthermore, even if these indirect control amounts can be accurately controlled, the etching rate may deviate from the target value. This is because even if the above-mentioned indirect control amount is the same, the etching rate varies depending on the slight difference in the film quality of the etching layer. For example, in the case of an oxide film such as SiO2, the film quality depends on the manufacturing method of the oxide film. That is, it depends on which oxide film is formed by thermal CVD, plasma CVD, water vapor oxidation, dry oxidation, or the like. The etching rate varies depending on the difference in film quality. Furthermore, even in the same manufacturing method, the etching rate during etching may vary depending on the conditions during film formation.
[0050]
Therefore, it is very difficult to appropriately control the etching rate by appropriately dealing with the various factors described above.
[0051]
On the other hand, in the present embodiment, the film thickness that is the object most desired to be controlled is directly controlled. Therefore, the management of the etching rate, which was very important for controlling the indirect control amount, becomes less important. Because, as described above, in the substrate being processed, the etching amount of the etching layer of the substrate can be directly measured in real time, and the time point at which the etching process should be terminated can be determined based on the measurement result. It is. For this reason, the substrate processing apparatus of this embodiment can control the etching amount with high accuracy even though it is not necessary to control the concentration and temperature of the etching processing solution so closely. .
[0052]
As described above, in the apparatus of this embodiment, the etching amount can be accurately controlled based on the measurement of the film thickness. Hereinafter, the process after the film thickness reaches a predetermined value and the transition from the etching process to the cleaning process is started will be further described. The next cleaning process can be performed in the same processing tank as that used for the etching process. In the following description, a case where cleaning processing is also performed in such a multi-function processing tank 562 will be described.
[0053]
In order to perform a cleaning process using pure water, the valve V4 is opened and pure water is supplied from the pure water supply source 566 to the multi-function processing tank 562. At this time, instead of discharging only the etching treatment liquid (hydrofluoric acid) stored in the multi-function treatment tank 562, the etching treatment liquid is gradually replaced with pure water by additionally supplying pure water. Go. This is to prevent the substrate W from being exposed to the atmosphere when switching from the etching process to the cleaning process. By this additional supply, the mixed solution of pure water and hydrofluoric acid overflows from the upper surface of the multifunctional processing tank 562 to the processing liquid recovery groove 562a.
[0054]
The overflowing mixed liquid is discharged to the waste liquid line via the pipe 562b, the three-way valve V1, the pipe 562bc, and the valve V2. By additionally supplying the same amount or more of pure water as the mixed liquid discharged in this way, hydrofluoric acid in the multifunctional treatment tank 562 is gradually replaced with pure water. By switching the three-way valve V1 when the concentration of hydrofluoric acid in the mixed solution becomes a predetermined concentration or less and does not interfere with the cleaning process, the pump P, the filter F, and the pipe 562c A part of the overflowed processing solution is returned to the multi-function processing tank 562. Thereby, the washing process with pure water is further performed. In such a cleaning process, as described above, the etching process is completely stopped by completely removing the etching process liquid adhering to the substrate.
[0055]
In the present embodiment, the film thickness is measured at a plurality of measurement points. Therefore, regarding the determination of the above processing transition time point, it is possible to use an average value of measurement results at a plurality of measurement points. Alternatively, it is possible to determine that the processing shift should be started when any value of the measurement results at the plurality of measurement points reaches a predetermined etching amount.
[0056]
Further, it is possible to perform the etching process while confirming the uniformity of etching based on the measurement values at a plurality of measurement points.
[0057]
When the uniformity of etching is insufficient, it is possible to modify the various conditions related to the etching process and perform the etching process. Even when the processing state is discontinuous and the etching rate changes, the etching amount is directly measured, so that the etching amount can be accurately controlled.
[0058]
If it is determined that the uniformity of etching is insufficient and recovery is impossible, the etching can be terminated immediately. This is because it is determined that the substrate being processed is defective at an early stage and no further useless processing is performed. After that, a retreat process for the defective substrate is performed, and after various conditions are appropriately reset, the next new etching process can be started. Therefore, it is possible to avoid wasting chemicals and time, and to minimize production losses.
[0059]
<B. Second Embodiment>
A substrate processing apparatus according to the second embodiment will be described with reference to FIGS.
[0060]
6 and 7 are diagrams showing the multi-function processing unit 56 of the substrate processing apparatus according to the second embodiment, and correspond to FIGS. 2 and 3 showing the multi-function processing unit 56 of the first embodiment. The multi-function processing unit 56 according to the second embodiment includes a movable unit 567 having a degree of freedom in the XZ plane, and the movable unit 567 includes the measurement end ME of the film thickness measuring device TM. This is very different from the embodiment. About another structure, it is the same as that of the multi-function part 56 of 1st Embodiment. In the following, a configuration different from the first embodiment will be mainly described.
[0061]
The movable portion 567 is provided at the distal end portion of the slide mechanism SD2. The slide mechanism SD2 performs translational movement in the Z direction as shown in the figure. This translational motion is obtained by converting the rotational motion of the motor M2 through the ball screw SC1 or the like. The slide mechanism SD2 is guided by a linear guide (not shown). Further, the entire drive mechanism in the Z direction is driven in the X direction by the slide mechanism SD1. This movement is achieved by converting the rotational movement of the motor M1 into the translational movement in the X direction of the slide mechanism SD1 via the ball screw SC2. The slide mechanism SD1 is guided by a linear guide LG. By such a drive mechanism, the movable portion 567 is driven in the X direction and the Z direction. The movable portion 567 operates in the XZ plane in a state of being close to the vicinity of the side wall surface of the multifunction processing tank 562. Further, the entire drive unit is cut off from the chemical atmosphere in the casing 560 using a bellows 569 made of a chemically stable material such as Teflon.
[0062]
In addition, the movable portion 567 has a measurement end ME and a CCD camera 568 at its distal end. The CCD camera 568 is electrically connected to the position recognition unit PR shown in FIG. 8 via a cable (not shown). The position recognition unit PR can recognize the position of the movable unit 567 by pattern recognition or the like using image information from the CCD camera 568 or the like. Further, based on the information, the measurement end driving unit ED (see FIG. 8) can change the position of the movable unit 567. Further, the measurement end ME is connected to the film thickness measuring device TM through the optical fiber OPL. Therefore, the measurement end ME of the movable portion 567 can measure the film thickness of the etching layer at the corresponding position on the substrate W.
[0063]
Since the positioning is performed based on the position recognition of the measurement target as described above, it is possible to specify the measurement target more accurately than in the case where the positioning is performed based only on the command position information. For example, assuming that a device such as a capacitor is formed on the substrate, the position of a specific oxide film constituting a part of the device can be recognized by image recognition. Therefore, the thickness of the oxide film at the specific position can be measured based on this recognition. Thus, since the film thickness of the oxide film that is actually part of the device formed on the substrate can be measured, more advanced film thickness management is possible.
[0064]
The measurement end ME is not fixed and is movable. Therefore, even when the measurement position needs to be changed due to reasons such as changing the substrate, the measurement position can be easily changed.
[0065]
Alternatively, a plurality of measurement points can be sequentially measured in one etching process. Thus, the etching process can be performed while confirming the uniformity of etching. The processing after confirming the uniformity of etching is the same as the processing described in the first embodiment.
[0066]
[Other variations]
In the above embodiment, the substrate whose film thickness is to be measured is a substrate that is actually a product, but measurement may be performed using a dummy substrate added to the outermost part of the array of a plurality of substrates. In a substrate that becomes an actual product, irregularities often exist on the surface due to other processes performed before the etching process. Therefore, it may be difficult to accurately measure the thickness of the etching layer due to the unevenness present at the measurement position. Or in order to avoid the unevenness, high-accuracy positioning is required. On the other hand, the dummy substrate can have an etching layer formed uniformly over the entire surface. In this case, the etching layer formed on the dummy substrate may be the same as the etching layer of the substrate that becomes the actual product. If such a dummy substrate is used, it is not necessary to strictly specify the measurement position on the dummy substrate in order to avoid unevenness on the surface, so that an appropriate etching amount can be measured by roughly determining the measurement position.
[0067]
In addition, an etching layer having a film thickness corresponding to several to several hundred times of normal etching can be formed on the dummy substrate. According to such a dummy substrate, it is possible to measure the etching amount in a plurality of etching processes by repeatedly using the same dummy substrate. This is because the film thickness in the etching process can be measured based on the film thickness at the end of the previous etching or before the start of the etching process. Therefore, it is possible to reduce the number of replacements of the dummy substrate.
[0068]
In the above-described embodiment, the case where the transition from the etching process to the cleaning process is performed by replacing the etching process liquid with pure water in the same multifunctional processing tank 562 has been described. However, the transition from the etching process to the cleaning process can be realized by other methods. For example, it is also possible to perform the etching process and the cleaning process in different processing tanks called a chemical tank CB and a cleaning tank WB, respectively, and transfer between the processing tanks by a predetermined transfer means. In this case, after the etching process is performed in the chemical tank CB, when the process proceeds to the cleaning process in the cleaning tank WB, the lifter head LH1 transports the chemical tank CB to the cleaning tank WB.
[0069]
Moreover, in the said embodiment, although the measurement end ME was provided only in the side wall surface of the one side of a processing tank, it can also be provided in the side wall surface of both sides. In this case, the substrates at both ends are arranged so that the films such as the SiO2 layers face outward. Accordingly, the film thickness of the etching layer being processed can be measured for two substrates at both ends of the substrate arranged in a plurality of substrate guides 563c of the lifter 563. Therefore, it is possible to measure the uniformity of the etching process depending on the position of the substrate in the processing tank. Therefore, it is possible to perform more advanced film thickness management for the substrate being processed.
[0070]
In the above embodiment, since the holding plate 563b blocks between the measurement end ME and the substrate W in the Y direction, there is a portion on the substrate W where the film thickness cannot be measured. If it is necessary to measure the film thickness even in such a portion, the holding plate 563b may be configured not to block the measurement end ME from the portion of the substrate W. The holding plate 563b shown in FIG. 9 is an example in which the shape of the holding plate 563b is devised for that purpose. The holding plate 563b has a semi-annular shape and is shaped so as not to block the substrate W as much as possible.
[0071]
The present invention can be applied not only to etching processing but also to general substrate processing that involves changes in film thickness.
[0072]
【The invention's effect】
As described above, according to the substrate processing apparatus of the first aspect, a plurality of measurement ends of the film thickness measuring means are provided outside the light transmitting side wall portion of the processing tank, and the film formed on the surface of the substrate Since the thickness is measured and the progress of the process with a change in film thickness is controlled based on the determination of whether or not to continue the process with a change in film thickness based on the measurement result, it is the target to be controlled most. The film thickness can be directly controlled at a plurality of measurement points, and the film thickness can be controlled more efficiently than in the case where an indirect control amount such as the concentration or temperature of the processing liquid is controlled.
[0073]
According to the substrate processing apparatus of the second aspect, the measurement end of the film thickness measuring means is movably disposed along the outside of the translucent side wall portion of the processing tank, and the measurement end is moved by the driving means. Measure the thickness of the film formed on the surface of the substrate, and control the progress of the process with a change in film thickness based on whether or not to continue the process with a change in film thickness based on the measurement result Therefore, it is possible to directly control the film thickness that is the target to be controlled at multiple measurement points, and it is more efficient than controlling indirect control variables such as the concentration and temperature of the processing solution. Can be controlled.
[0074]
Further, according to the substrate processing apparatus of the third aspect, the first driving means moves the measurement end in the vertical direction along the outer side surface of the translucent side wall portion, and the second driving means transmits the measurement end through the translucent side. Since it is moved in the horizontal direction along the outer surface of the conductive side wall, the measurement end can be easily and accurately moved.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a configuration of a substrate processing apparatus according to a first embodiment of the present invention.
2 is a cross-sectional view of the multi-function processing unit 56. FIG.
3 is a longitudinal sectional view of a multi-function processing unit 56. FIG.
4 is a conceptual diagram showing a schematic configuration of a control system of a multi-function processing unit 56. FIG.
5 is a schematic diagram showing a peripheral structure of a multi-function processing unit 56. FIG.
FIG. 6 is a cross-sectional view of a multi-function processing unit 56 of the substrate processing apparatus according to the second embodiment.
7 is a longitudinal sectional view of the multi-function processing unit 56. FIG.
8 is a conceptual diagram showing a schematic configuration of a control system of the multi-function processing unit 56. FIG.
9 is a diagram showing a modification of the lifter 563. FIG.
[Explanation of symbols]
W substrate
3 Substrate extraction part
5 Substrate processing section
7 Board storage
8 Cassette unloading section
9 Board transport mechanism
52 Chemical processing section
54 Flushing section
56 Multi-function processor
560 casing
561 Shutter
562 Multifunctional treatment tank
563 Lifter
563a Lifter head
563b Holding plate
563c Board Guide
564 Lifter Drive Unit
TM film thickness measuring instrument
ME measuring end
TC Through joint
OPL optical fiber

Claims (5)

A substrate processing apparatus for performing a predetermined process on a substrate having a film formed on a surface thereof,
A processing tank having a light transmitting side wall portion made of a light transmitting member and storing an etching treatment liquid for performing an etching treatment by immersing the substrate;
A pipe for supplying a processing liquid for supplying an etching processing liquid and pure water to the processing tank;
A film thickness measuring means for measuring the thickness of a film formed on the surface of the substrate immersed in the processing liquid of the processing tank, having a plurality of measuring ends provided on the outer side of the translucent side wall; ,
And based on the measurement results of the plurality of film thickness measured by the thickness measuring means, the etching process is continued when it is determined that should be continued etching process, when it is determined that should be terminated etching process Control means for supplying pure water from the processing liquid supply pipe ;
A substrate processing apparatus comprising: A substrate processing apparatus for performing a predetermined process on a substrate having a film formed on a surface thereof,
A treatment tank having a light-transmitting side wall composed of a light-transmitting member, and storing an etching treatment liquid for immersing the substrate and performing a treatment accompanied by a film thickness change;
A film thickness measuring means for measuring the thickness of the film formed on the surface of the substrate immersed in the treatment liquid of the treatment tank, having a measurement end disposed outside the translucent sidewall portion;
Driving means for moving the measurement end along the outer side surface of the translucent side wall;
And based on the measurement results of the plurality of film thickness measured by the thickness measuring means, the etching process is continued when it is determined that should be continued etching process, when it is determined that should be terminated etching process Control means for supplying pure water from the processing liquid supply pipe ;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 2,
The driving means includes
First driving means for moving the measurement end in the vertical direction along the outer surface of the translucent side wall;
Second driving means for moving the measurement end in a horizontal direction along an outer surface of the translucent side wall;
A substrate processing apparatus comprising: A substrate processing apparatus according to any one of claims 1 to 3,
The substrate processing apparatus is characterized in that the control means uses an average value at a plurality of measurement points for determination of a transition point from the etching process to the pure water process. A substrate processing apparatus according to any one of claims 1 to 3,
The control means is a substrate processing apparatus characterized in that, regarding the determination of the transition point from the etching process to the pure water process, any one of the measurement results at a plurality of measurement points reaches a predetermined etching amount. .

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