WO2021083045A1 - 用于激光干涉光刻系统的相位测量装置及其使用方法 - Google Patents

用于激光干涉光刻系统的相位测量装置及其使用方法 Download PDF

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Publication number
WO2021083045A1
WO2021083045A1 PCT/CN2020/123228 CN2020123228W WO2021083045A1 WO 2021083045 A1 WO2021083045 A1 WO 2021083045A1 CN 2020123228 W CN2020123228 W CN 2020123228W WO 2021083045 A1 WO2021083045 A1 WO 2021083045A1
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Prior art keywords
polarization beam
splitting prism
beam splitting
wave plate
prism
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Ceased
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PCT/CN2020/123228
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English (en)
French (fr)
Inventor
朱煜
王磊杰
张鸣
徐继涛
成荣
郝建坤
李鑫
杨开明
范玉娇
高思齐
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Tsinghua University
Beijing U Precision Tech Co Ltd
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Tsinghua University
Beijing U Precision Tech Co Ltd
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Priority to US17/767,420 priority Critical patent/US20240319619A1/en
Publication of WO2021083045A1 publication Critical patent/WO2021083045A1/zh
Anticipated expiration legal-status Critical
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
    • G02B27/285—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining comprising arrays of elements, e.g. microprisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams

Definitions

  • This application belongs to the technical field of optical instrumentation, and in particular relates to a phase measurement device used in a laser interference lithography system and a method of use thereof.
  • Grating devices are key components in major engineering systems such as large-scale astronomical telescopes, inertial confinement nuclear fusion laser ignition systems, lithography systems, etc. In recent years, the requirements for size, grid line density, and accuracy have been continuously improved. At the same time, the application types of gratings are also not available. Limited to one-dimensional gratings, it also includes two-dimensional gratings, curved gratings, and variable period gratings. Grating manufacturing is moving to the order of meter-level size, nano-level precision, and sub-10,000-level grid line density. The manufacturing of large-scale gratings with diversified high-precision dense grid lines has become a hot issue in the field of grating manufacturing.
  • grating manufacturing technologies such as mechanical scribing, laser direct writing, and mechanical splicing all have different technical defects.
  • the main disadvantages of mechanical scribing include low precision in large-area manufacturing, long processing cycles, and ghost lines in the manufactured gratings.
  • Laser direct writing is mainly Disadvantages include low precision of large-area manufacturing and long processing cycle.
  • Mechanical splicing has disadvantages such as poor splicing accuracy, complicated splicing process, and high cost. Therefore, the manufacture of the above-mentioned magnitude gratings is difficult to achieve through conventional techniques.
  • Laser interference lithography is an important technology that uses periodic patterns generated by the interference of two or more laser beams to expose photosensitive substrates to manufacture micro-nano array devices.
  • the laser interference lithography technology can realize the large-area grating manufacturing with high precision and short processing cycle.
  • the laser interference lithography technology has gradually become the mainstream of the large-area high-precision grating manufacturing technology.
  • the main difficulty in the application of interference lithography technology in the manufacture of large-area high-precision gratings is the research and development of interference lithography systems.
  • the interferometric pattern phase locking system determines the accuracy of the pattern locking in the interferometric lithography system
  • the key module is the phase measuring device.
  • the phase measuring device For the research and development of high-precision interferometric lithography systems, multiple grating manufacturing system companies and research institutions have carried out a series of researches. The research mainly focuses on high-precision interferometric lithography systems. The research results of phase measurement devices are included in many patents. Expose.
  • the system uses the light from the two exposure beams to coincide and enter the CCD (Charge-coupled Device) to form interference fringes.
  • the CCD monitors the movement of the spatial interference fringe image to obtain the interference pattern drift at the substrate, and inputs the drift as feedback to the
  • the controller controls the piezoelectric ceramic drive mirror holder to adjust the phase of the interference pattern, so as to achieve the locking of the interference pattern, and finally obtain a better exposure quality.
  • the sensor adopts CCD to receive light signal and perform photoelectric conversion. Due to the limitation of CCD resolution and frame rate, it is difficult to achieve high-speed and high-precision phase modulation, and it cannot meet the requirements of high-precision grating pattern production.
  • the exposure light source forms an interference pattern on the substrate through the light splitting reflection light path.
  • the system uses the beam splitter near the base to extract the left and right exposure beams to form two interference signals with a phase difference of 180°.
  • the interference signals are subjected to photoelectric conversion and differential amplification to obtain voltage signals.
  • the interference pattern is affected by external interference and causes the voltage signal to change due to the phase shift.
  • the voltage signal is used as feedback to control the electro-optic modulator EOM (Electro-optic Modulator) to adjust the phase of the interference pattern to keep the voltage stable, thereby realizing the locking of the interference pattern.
  • EOM Electro-optic Modulator
  • the locking system uses a photodetector as the photoelectric conversion.
  • the measurement signal of the dual-channel homodyne phase measurement interferometer is a DC signal. Its anti-interference ability is poor and it is not easy to achieve high-precision measurement. It is also difficult to solve the phase, subdivide and determine the direction. , Not the best choice.
  • the Massachusetts Institute of Technology discloses a scanning laser interference lithography system in US patent US6,882,477B1.
  • the lithography system uses two collimated small-size beams to interfere to form an interference pattern to expose a substrate for step and scan motion.
  • the small-size beam interference after collimation effectively eliminates the phase nonlinear error of the interference pattern; at the same time, in order to prevent the system interference pattern from the moving substrate platform from the phase drift caused by the error, the lithography system
  • a pattern locking device based on the principle of heterodyne measurement is listed.
  • the device generates the frequency difference of heterodyne phase measurement by arranging three acousto-optic modulators in the interference optical path, and uses a beam sampler to sample the interference beam to the heterodyne phase meter.
  • Pattern phase detection the detected phase is fed back to the controller to control the modulation phase of the acousto-optic modulator to achieve pattern locking;
  • heterodyne measurement has the advantages of high-speed, high-precision pattern phase locking, but when using this structure to manufacture variable period gratings, exposure The deviation of the beam will separate the measuring beam spot, and it is impossible to realize real-time fringe control for the interference exposure system made by the variable period grating.
  • phase measurement equipment in the prior art has the following problems: CCD resolution and frame rate are limited, it is difficult to achieve high-speed and high-precision phase modulation; homodyne phase measurement interferometer has poor anti-interference ability; Heterodyne measurement interferometers cannot achieve fringe control for the interferometric exposure system manufactured by the variable period grating; that is, the phase measurement in the prior art has certain limitations, and it cannot achieve the phase measurement of the variable period interference exposure system and complete the change in production. Fringe control during periodic grating.
  • the present application provides a phase measurement device for laser interference lithography system, including a first wave plate, a first polarization beam splitter prism, a fourth wave plate, a retroreflector, a third wave plate, Mirror, second wave plate, polarizer, second polarization beam splitting prism, third polarization beam splitting prism, first photodetector, second photodetector and base; said first polarization beam splitting prism, second polarization beam splitting prism
  • the prism and the third polarization splitting prism are fixed on the base, and the exit surface of the first polarization splitting prism is adjacent to an incident surface of the third polarization splitting prism, and the exit surface of the second polarization splitting prism is adjacent to the third polarization splitting prism.
  • the other incident surface is adjacent; the first photodetector and the second photodetector are located on the base in the direction of the exit surface of the third polarization beam splitting prism;
  • the fast axis direction of the first wave plate and the edge of the first polarization beam splitter prism are arranged at an angle of 45° on an incident surface of the first polarization beam splitter prism, and the edge of the first wave plate is opposite to the right angle side of the incident surface of the first polarization beam splitter prism.
  • the direction of the side line of the retroreflector and the bottom side line of the first polarization beam splitting prism are perpendicular to the other incident surface of the first polarization beam splitting prism; the fast axis direction of the fourth wave plate and the edge of the first polarization beam splitting prism It is arranged at an angle of 45° between the first polarization beam splitting prism and the retroreflector; the fast axis direction of the third wave plate and the edge of the first polarization beam splitting prism are arranged at an exit of the first polarization beam splitting prism at an angle of 45°
  • the third wave plate is coaxial with the first wave plate; the reflecting mirror and the third wave plate are coaxially arranged outside the third wave plate away from the first polarization beam splitting prism; the second wave plate is arranged on the Between a polarization beam splitting prism and a third polarization beam splitting prism, and located on the beam path reflected by the reflecting mirror, transmitted by the third wave plate and reflected by the first polarization beam splitting prism
  • the first wave plate, the third wave plate, and the fourth wave plate are all quarter wave plates, and the second wave plate is a half wave plate,
  • the reference light enters the first wave plate in the s polarization state and is transmitted to the incident surface of the first polarization beam splitter prism, and the reflected light after passing through the first polarization beam splitter prism sequentially passes through the fourth wave plate in the s polarization state and is reflected by the retroreflector.
  • the fourth wave plate becomes the p-polarization state, and then passes through the first polarization beam splitter prism, the third polarization beam splitter prism and the polarizer to form the first reference light;
  • the transmitted light after the first polarization beam splitter prism sequentially passes through the third wave After the film transmission, mirror reflection, and third wave plate transmission, it becomes s-polarized state, and then it is reflected by the first polarization beam splitter prism to the second wave plate transmission and then becomes p-polarized state, and then passes through the third polarization beam splitter prism and polarizer Transmit to form the second reference light;
  • the first measurement light enters the incident surface of the second polarization beam splitting prism in the s polarization state, and is sequentially reflected by the second polarization beam splitting prism and the third polarization beam splitting prism to the polarizer for transmission, and interferes with the first reference light to form the first measurement signal
  • the output of the first photodetector is incident; the additional frequency of the second measurement light enters the incident surface of the second polarization beam splitting prism in the s polarization state, and is sequentially reflected by the second polarization beam splitting prism and the third polarization beam splitting prism to the polarizer for transmission, and
  • the second path of reference light interferes to form a second path of measurement signal and enters the second photodetector to output.
  • it further comprises a housing which covers the first polarization beam splitter prism, the second polarization beam splitter prism and the third polarization beam splitter prism and is fixed on the base.
  • the upper surface of the base is provided with mounting grooves for the first polarization beam splitting prism, the second polarization beam splitting prism and the third polarization beam splitting prism, the first polarization beam splitting prism, the second polarization beam splitting prism and the third polarization beam splitting prism Fixed on the groove of the base. Further, the mounting grooves of the first polarization beam splitting prism, the second polarization beam splitting prism and the third polarization beam splitting prism on the base are processed and positioned by a six-point positioning method.
  • the first polarization beam splitting prism, the second polarization beam splitting prism and the third polarization beam splitting prism are respectively bonded to the base by quick-drying glue.
  • the first wave plate, the fourth wave plate, the third wave plate and the second wave plate are respectively bonded to the first polarization beam splitting prism by van der Waals force, and the polarizer and the third polarization beam splitting prism are bonded by van der Waals force. .
  • the retroreflector and the fourth wave plate are bonded by ultraviolet curing glue; the reflector and the third wave plate are bonded by ultraviolet curing glue.
  • This application also provides a method of using the above-mentioned phase measuring device for laser interference lithography system.
  • the reference light has an additional frequency of 120MHz, and is incident on the first wave plate in the s polarization state and transmitted to the incident surface of the first polarization beam splitting prism.
  • the reflected light after the polarization beam splitting prism passes through the fourth wave plate, the retroreflective mirror, and the fourth wave plate in the s polarization state, and then becomes the p polarization state, and then passes through the first polarization beam splitting prism, the third polarization beam splitting prism and the polarization state.
  • the first path of reference light is formed through the first polarization beam splitting prism; the transmitted light after passing through the third wave plate transmission, mirror reflection and third wave plate transmission in turn becomes s-polarized state, and then passes through the first polarization beam splitting prism After being reflected to the second wave plate, it becomes the p-polarization state, and then passes through the third polarization beam splitting prism and the polarizing plate to form the second path of reference light;
  • the first measurement light has an additional frequency of 100MHz, enters the incident surface of the second polarization beam splitting prism in the s polarization state, and is sequentially reflected by the second polarization beam splitting prism and the third polarization beam splitting prism to the polarizer for transmission, and interferes with the first reference light beam
  • the formation of the first measurement signal enters the first photodetector output;
  • the second measurement light has an additional frequency of 100MHz, enters the incident surface of the second polarization beam splitter in the s polarization state, and passes through the second polarization beam splitter prism and the third polarization beam splitter prism in turn Reflected to the polarizer for transmission, interfere with the second path of reference light to form a second path of measurement signal and enter the second photodetector output; resolve the output of the first measurement signal and the second path of measurement signal to obtain the first path of measurement light and the second path Road measures the phase of light.
  • the frequency of the first measurement signal and the second measurement signal obtained are the same, both of which are interference signals with a frequency difference of 20MHz; when the laser interference lithography exposure period
  • the distance between the first measurement light and the second measurement light is changed, and at the same time it is shifted to the center or edge of the polarization beam splitter, and the reference light is shifted by the same distance to the center or edge of the polarization beam splitter to ensure that the output measurement signals are always kept in line.
  • the signal intensity will not change accordingly, thus completing the real-time fringe control of the variable-period exposure of laser interference lithography.
  • the optical path adopts a heterodyne measurement method.
  • the heterodyne measurement beam (reference light) and the two measurement beams respectively form two same frequency difference interference signals, including the phase information of the two beams of measurement light and the phase information of the heterodyne beam, which are resolved by displacement Calculate to eliminate the heterodyne phase and obtain two beams of measured light phase data.
  • the phase measurement device of the present application can be used in a variable-period interference exposure system.
  • the phase measurement device uses a fringe control scheme based on the heterodyne measurement principle to realize the fringe control of the variable-period interference exposure system.
  • the phase measurement device has the advantages of high-speed and high-precision measurement, simple optical path structure, and high laser utilization rate. It is an indispensable key instrument and equipment in the lithography system for manufacturing variable period gratings.
  • the device has the advantages of high-speed and high-precision measurement, adopts a highly integrated structure, simple optical path structure, and high laser utilization rate.
  • FIG. 1 is a three-dimensional schematic diagram of a phase measuring device used in a laser interference lithography system of this application;
  • Fig. 2 is a schematic diagram of the structure of the embodiment of Fig. 1 after the housing is opened.
  • the device is in the shape of a square box, in which the optical path system components are in the box formed by the housing 1 and the base 2.
  • the first The photodetector 312 and the second photodetector 313 extend out of the box body, and the housing 1 is fixedly connected with the base 2 by screws.
  • the first photodetector 312 and the second photodetector 313 can receive the polarized light of the third polarization beam splitting prism 310.
  • the interferometric measurement signal transmitted by the sheet that is, the first photodetector 312 receives the first measurement signal, and the second photodetector 313 receives the second measurement signal, which is sent to the solution system.
  • the phase measuring device shown in FIG. 2 is removed from the housing 1 in the embodiment shown in FIG. 1, and includes a first wave plate 302, a first polarization beam splitting prism 301, a fourth wave plate 303, a retroreflector 304, and a third wave plate 302.
  • the first polarization splitting prism 301, the second polarization splitting prism 308, and the third polarization splitting prism 310 are fixed on the base 2, and the exit surface of the first polarization splitting prism 301 and an incident surface of the third polarization splitting prism 310 Adjacent, the exit surface of the second polarization beam splitting prism 308 is adjacent to the other incident surface of the third polarization beam splitting prism 310; the first photodetector 312 and the second photodetector 313 are located on the exit surface of the third polarization beam splitting prism 310 The direction is fixed on the base 2;
  • the fast axis direction of the first wave plate 302 and the edge of the first polarization beam splitting prism 301 are arranged on an incident surface of the first polarization beam splitting prism 301 at an angle of 45°, and the edge of the first wave plate 302 and the first polarization beam splitting prism 301 are arranged at an angle of 45°.
  • the right-angle side of the incident surface is tangent; the side line direction of the retroreflector 304 is perpendicular to the bottom side line of the first polarization beam splitting prism 301 and is arranged on the other incident surface of the first polarization beam splitting prism 301; the fourth wave plate 303 is fast
  • the axis direction and the edge of the first polarization beam splitting prism 301 are arranged at an angle of 45° between the first polarization beam splitting prism 301 and the retroreflector 304; the fast axis direction of the third wave plate 305 and the edge of the first polarization beam splitting prism 301 It is arranged at an exit surface of the first polarization beam splitting prism 301 at an angle of 45°, and the third wave plate 305 is coaxial with the first wave plate 302; the reflecting mirror 306 and the third wave plate 305 are coaxially arranged away from the first wave plate 302.
  • the first wave plate 302, the third wave plate 305, and the fourth wave plate 303 are all quarter wave plates
  • the second wave plate 307 is a half wave plate
  • the second wave plate 307, the third wave plate 305, and the fourth wave plate 303 are respectively bonded to the first polarization beam splitting prism 301 through van der Waals force
  • the polarizing plate 309 and the third polarization beam splitting prism 310 are bonded through van der Waals force to reflect backward.
  • the mirror 304 and the fourth wave plate 303 are bonded by UV curing glue
  • the reflector 306 and the third wave plate 305 are bonded by UV curing glue.
  • Mounting grooves for the first polarization beam splitting prism 301, the second polarization beam splitting prism 308, and the third polarization beam splitting prism 310 can be respectively provided on the upper surface of the base 2.
  • the three grooves are arranged in a right-angled triangle, wherein the third polarization beam splitting prism 310 is located at a right-angle point, and the groove is processed and positioned using a six-point positioning method to improve positioning accuracy and ensure the high accuracy of the relative position of the internal mirror group.
  • the first polarization splitter prism 301, the second polarization splitter prism 308, and the third polarization splitter prism are combined 310 is fixed on the corresponding groove, and is respectively bonded in the groove of the base with the bottom surface through quick-drying glue.
  • the reference light 314 is used to add a frequency of 120MHz, which is transmitted through the first wave plate 302 in an s-polarized state and becomes a circularly polarized state and enters the first polarization beam splitting prism 301.
  • the reflected light of a polarization beam splitting prism 301 is transmitted through the fourth wave plate 303 in the s polarization state, reflected by the retroreflector 304, and transmitted through the fourth wave plate 303, and then becomes p polarization state and passes through the first polarization beam splitting prism 301 and the third polarization state.
  • the beam splitting prism 310 and the polarizing plate 309 transmit to form the first reference light; the transmitted light of the first polarizing beam splitting prism 301 is transmitted through the third wave plate 305, reflected by the mirror 306, and transmitted through the third wave plate 305 to become s-polarized.
  • the first polarization beam splitting prism 301 is reflected to the second wave plate 307 and then becomes p-polarized state, which is transmitted through the third polarization beam splitting prism 310 and the polarizing plate 309 to form the second path of reference light; the first path of measurement light 315, the second path
  • the additional frequency of the measuring light 316 is 100MHz, and it is incident from the incident surface of the second polarization beam splitting prism 308 in parallel with the s polarization state, and is sequentially reflected by the second polarization beam splitting prism 308, reflected by the third polarization beam splitting prism 310, and transmitted by the polarizing plate 309. Then interfere with the first reference light and the second reference light to form the first measurement signal and the second measurement signal.
  • the two measurement signals are incident on the first photodetector 312 and the second photodetector 313 to become electrical signals.
  • the transport solution can get the beam phase.
  • the two interferometric signals have the same frequency and are interference signals with a frequency difference of 20MHz; when the exposure period of laser interferometric lithography changes, the distance between the first measurement light 315 and the second measurement light 316 changes, and at the same time it moves to the center of the polarization beam splitter or Edge offset, the reference light 314 is offset by the same distance to the center or edge of the polarization beam splitter, which can ensure that the output measurement signal is always combined and the signal intensity will not change accordingly, thus completing the variable-period exposure of laser interference lithography Real-time stripe control.
  • Van der Waals force also known as van der Waals force, refers to intermolecular forces.

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  • Length Measuring Devices By Optical Means (AREA)

Abstract

一种用于激光干涉光刻系统的相位测量装置及使用方法，包括第一波片（302）、第一偏振分光棱镜（301）、第四波片（303）、后向反射镜（304）、第三波片（305）、反射镜（306）、第二波片（307）、偏振片（309）、第二偏振分光棱镜（308）、第三偏振分光棱镜（310）、第一光电探测器（312）、第二光电探测器（313）和基座（2）；第一偏振分光棱镜（301）、第二偏振分光棱镜（308）、第三偏振分光棱镜（310）、第一光电探测器（312）和第二光电探测器（313）固定在基座（2）上，第一波片（302）、第二波片（307）、第三波片（305）及第四波片（303）分别设置在第一偏振分光棱镜（301）四周，偏振片（309）与第三偏振分光棱镜（310）出射面，后向反射镜（304）在第四波片（303）外侧，反射镜（306）在第三波片（305）外侧，组成相位测量的光路系统。干涉测量信号经解算得到测量光相位，用于变周期的干涉曝光的条纹控制。

Description

用于激光干涉光刻系统的相位测量装置及其使用方法
本申请要求于2019年10月31日提交的中国专利申请No.201911050187.5的优先权和权益，其全部内容通过引用结合在本申请中。
技术领域
本申请属于光学仪器仪表技术领域，特别涉及一种用于激光干涉光刻系统的相位测量装置及其使用方法。
背景技术
光栅器件作为大型天文望远镜、惯性约束核聚变激光点火系统、光刻系统等重大工程系统中的关键器件，近年来对尺寸、栅线密度、精度等要求不断提高，同时，光栅的应用类型也不在局限于一维光栅，还包括二维光栅、弯曲光栅、变周期光栅等。光栅制造正在向米级尺寸、纳米级精度、亚万级栅线密度的量级迈进，多样化高精度密栅线的大尺寸光栅的制造成为了光栅制造领域的亟需解决的热点问题。
机械刻划、激光直写、机械拼接等传统光栅制造技术均存在不同的技术缺陷，机械刻划主要缺点包括大面积制造精度低、加工周期长、制造的光栅存在鬼线等，激光直写主要缺点包括大面积制造精度低、加工周期长等，机械拼接则存在拼接精度差、拼接过程复杂、成本昂贵等缺点。因此，上述量级光栅的制造难以通过传统技术来实现。激光干涉光刻技术是一种利用两束或者多束激光干涉产生的周期性图形曝光感光基底制造微纳阵列器件的重要技术，主要应用于制造特征尺寸低于亚波长的柱阵、光栅、孔阵、点阵、微透镜阵列等器件，这些微阵列器件广泛应用于国防、民生、科研等领域。通过激光干涉光刻技术可实现密栅线高精度、且加工周期短的大面积光栅制造，激光干涉光刻技术也逐步成为了大面积高精度光栅制造技术中的主流。干涉光刻技术在大面积高精度光栅制造的应用中的主要难点为干涉光刻系统的研发。决定干涉光刻系统中图形锁定精度的是干涉图形相位锁定系统，其中的 关键模块为相位测量装置。针对高精度干涉光刻系统的研发，多个光栅制造系统公司及研究机构展开了一系列的研究，研究主要集中于高精度干涉光刻系统，对于相位测量装置的研究成果在诸多专利中均有揭露。
University of Texas at Arlington的学者提出了一种较为常用的干涉图形相位锁定系统。系统利用从两曝光光束引出的光重合入射至CCD(Charge-coupled Device)形成干涉条纹，CCD通过监测空间干涉条纹图像的移动来获取基底处干涉图形的漂移量，并将漂移量作为反馈输入至控制器，控制器控制压电陶瓷驱动反射镜座调节干涉图形相位，从而实现干涉图形的锁定，最终获取较好的曝光质量。传感器采用CCD接受光信号并进行光电转换，由于CCD分辨率与帧率的限制，难以做到高速高精度的相位调制，并不能满足高精度光栅图形的制作要求。
MIT的学者提出了一种基于零差相位测量干涉仪相位锁定系统方案。曝光光源经分光反射光路在基底处形成干涉图形。为防止干涉图形漂移，系统利用基地附近的分光镜分别提取左右曝光光束形成两路具有180°相差的干涉信号，干涉信号通过光电转换后作差放大得到电压信号。干涉图形受外界干扰影响发生相位漂移而引起电压信号变化，以电压信号作为反馈来控制电光调制器EOM(Electro-optic Modulator)调节干涉图形相位来保持电压稳定，从而实现干涉图形的锁定。锁定系统采用光电探测器作为光电转换，所用双通道零差相位测量干涉仪的测量信号为直流信号，其抗干扰能力较差不易实现高精度测量，相位求解、细分及判向也都较为困难，并非最优选择。
麻省理工学院在美国专利US6,882,477B1中公开了一种扫描激光干涉光刻系统，该光刻系统利用两束经准直后的小尺寸光束干涉形成干涉图形曝光作步进扫描运动的基底实现大面积光栅制作，经准直后的小尺寸光束干涉有效的消除了干涉图形的相位非线性误差；同时，为防止系统干涉图形相对于运动的基底平台发生相位漂移引起误差，该光刻系统列举了一种基于外差测量原理的图形锁定装置，该装置通过在干涉光路中布置三个声光调制器产生外差相位测量的频差，利用光束采样器采样干涉光束至外差相位计进行图形相位检测，检测的相位反馈至控制器控制声光调制器调制相位实现图形锁定；外差测量方式具有高速、高精度等图形相位锁定的优点，但利用该结构进行变周期光栅制造时，曝光光束的偏移会使测量光束光斑分离，无法对变周期 光栅制造的干涉曝光系统实现实时的条纹控制。
综上所述，现有技术中的相位测量设备存在以下问题：CCD分辨率与帧率的限制，难以做到高速高精度的相位调制；零差相位测量干涉仪抗干扰能力较差；现有外差测量干涉仪无法对变周期光栅制造的干涉曝光系统实现条纹控制；即现有技术中的相位测量均存在一定的局限性，无法实现对变周期干涉曝光系统的相位测量及完成在制作变周期光栅过程中的条纹控制。
发明内容
为了解决上述问题，本申请提供了一种用于激光干涉光刻系统的相位测量装置，包括第一波片、第一偏振分光棱镜、第四波片、后向反射镜、第三波片、反射镜、第二波片、偏振片、第二偏振分光棱镜、第三偏振分光棱镜、第一光电探测器、第二光电探测器和基座；所述第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜固定在基座上，且第一偏振分光棱镜的出射面与第三偏振分光棱镜的一个入射面相邻，第二偏振分光棱镜的出射面与第三偏振分光棱镜的另一个入射面相邻；第一光电探测器和第二光电探测器位于第三偏振分光棱镜的出射面方向固定在基座上；
所述第一波片的快轴方向与第一偏振分光棱镜边缘呈45°角设置在第一偏振分光棱镜的一个入射面，且第一波片边缘与第一偏振分光棱镜入射面直角边相切；所述后向反射镜的边线方向与第一偏振分光棱镜底部边线垂直设置在第一偏振分光棱镜的另一入射面；所述第四波片的快轴方向与第一偏振分光棱镜边缘呈45°角设置在第一偏振分光棱镜和后向反射镜之间；所述第三波片的快轴方向与第一偏振分光棱镜边缘呈45°角设置在第一偏振分光棱镜的一个出射面，且第三波片与第一波片同轴；所述反射镜与第三波片同轴设置在背离第一偏振分光棱镜的第三波片外侧；所述第二波片设置在第一偏振分光棱镜与第三偏振分光棱镜之间，且位于经反射镜反射、第三波片透射和第一偏振分光棱镜反射后的光束线路上，第二波片的边缘与第一偏振分光棱镜的出射面直角边相切；偏振片的偏振方向与第三偏振分光棱镜呈45°角设置在第三偏振分光棱镜的出射面，
其中，所述第一波片、第三波片和第四波片都是四分之一波片，所述第二波片为二分之一波片，
其中，参考光以s偏振态入射第一波片透射至第一偏振分光棱镜入射面，经第一偏振分光棱镜后的反射光以s偏振态依次经过第四波片、后向反射镜反射、第四波片后变为p偏振态，再经过第一偏振分光棱镜、第三偏振分光棱镜和偏振片透射形成第一路参考光；经第一偏振分光棱镜后的透射光依次经过第三波片透射、反射镜反射和第三波片透射后变为s偏振态，然后经过第一偏振分光棱镜反射至第二波片透射后变为p偏振态，再经过第三偏振分光棱镜和偏振片透射形成第二路参考光；
第一路测量光以s偏振态入第二偏振分光棱镜的入射面，依次经过第二偏振分光棱镜和第三偏振分光棱镜反射到偏振片透射，与第一路参考光干涉形成第一测量信号入射第一光电探测器输出；第二路测量光附加频率为以s偏振态入第二偏振分光棱镜的入射面，依次经过第二偏振分光棱镜和第三偏振分光棱镜反射到偏振片透射，与第二路参考光干涉形成第二路测量信号入射第二光电探测器输出。
优选地，还包括外壳，所述外壳罩着第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜并固定在基座。
优选地，所述基座的上表面设置第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜的安装凹槽，第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜固定在基座的凹槽上。进一步地，所述基座上的第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜的安装凹槽采用六点定位方法加工定位。
优选地，所述第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜分别与基座通过速干胶粘接。
优选地，所述第一波片、第四波片、第三波片及第二波片分别与第一偏振分光棱镜通过范德华力粘接，偏振片与第三偏振分光棱镜通过范德华力粘接。
优选地，所述后向反射镜与第四波片通过紫外固化胶粘接；所述反射镜与第三波片通过紫外固化胶粘接。
本申请还提供了上述用于激光干涉光刻系统的相位测量装置的使用方法，参考光附加频率为120MHz、以s偏振态入射第一波片透射至第一偏振分光棱镜入射面，经第一偏振分光棱镜后的反射光以s偏振态依次经过第四波 片、后向反射镜反射、第四波片后变为p偏振态，再经过第一偏振分光棱镜、第三偏振分光棱镜和偏振片透射形成第一路参考光；经第一偏振分光棱镜后的透射光依次经过第三波片透射、反射镜反射和第三波片透射后变为s偏振态，然后经过第一偏振分光棱镜反射至第二波片透射后变为p偏振态，再经过第三偏振分光棱镜和偏振片透射形成第二路参考光；
第一路测量光附加频率为100MHz、以s偏振态入第二偏振分光棱镜的入射面，依次经过第二偏振分光棱镜和第三偏振分光棱镜反射到偏振片透射，与第一路参考光干涉形成第一测量信号入射第一光电探测器输出；第二路测量光附加频率为100MHz、以s偏振态入第二偏振分光棱镜的入射面，依次经过第二偏振分光棱镜和第三偏振分光棱镜反射到偏振片透射，与第二路参考光干涉形成第二路测量信号入射第二光电探测器输出；解算输出的第一测量信号和第二路测量信号得到第一路测量光和第二路测量光的相位。
采用上述用于激光干涉光刻系统的相位测量装置及其使用方法，得到的第一测量信号和第二路测量信号的频率相同，均为20MHz频差的干涉信号；当激光干涉光刻曝光周期改变时，第一路测量光与第二路测量光间距改变，同时向偏振分光镜中心或边缘偏移，参考光向偏振分光镜中心或边缘偏移相同距离，保证输出的测量信号始终保持合束，信号强度并不会随之改变，由此完成对激光干涉光刻变周期曝光的实时条纹控制。
光路为采用一种外差测量方法，外差测量光束(参考光)分别与两束测量光束形成两路同频差干涉信号，包含两束测量光相位信息与外差光束相位信息，通过位移解算消除外差相位并获得两束测量光相位数据。
本申请的相位测量装置可用于变周期的干涉曝光系统，该相位测量装置利用一种基于外差测量原理的条纹控制方案，实现对变周期干涉曝光系统的条纹控制。该相位测量装置具有高速高精度的测量优点，且光路结构简洁、激光利用率高。是制造变周期光栅的光刻系统中不可或缺的关键仪器设备。该装置具有高速高精度的测量优点，采用高度集成化结构，光路结构简洁、激光利用率高。
附图说明
图1为本申请的用于激光干涉光刻系统的相位测量装置的立体示意图；
图2为图1实施例打开外壳后的结构示意图。
图中：1-外壳，2-基座，301-第一偏振分光棱镜，302-第一波片，303-第四波片，304-后向反射镜，305-第三波片，306-反射镜，307-第二波片，308-第二偏振分光棱镜，309-偏振片，310-第三偏振分光棱镜，312-第一光电探测器，313-第二光电探测器，314-参考光，315-第一路测量光，316-第二路测量光。
具体实施方式
为了更进一步阐述本申请为解决技术问题所采取的技术手段及功效，以下结合附图和具体实施例对本申请做进一步详细描述，需要说明的是所提供的附图是示意性的，相互间并没有完全按照尺寸或者比例绘制，因此附图和具体实施例并不作为本申请要求的保护范围限定。
如图1所示的用于激光干涉光刻系统的相位测量装置可选实施例，该装置为方形盒体状，其中的光路系统器件在由外壳1和基座2形成的盒体内，第一光电探测器312和第二光电探测器313伸出盒体外，外壳1以螺丝与基座2固定连接，第一光电探测器312和第二光电探测器313可接收第三偏振分光棱镜310经偏振片透射后的干涉测量信号，即第一光电探测器312接收第一测量信号，第二光电探测器313接收第二测量信号，输送到解算系统。
如图2所示的相位测量装置，由图1所示的实施例去除外壳1，包括第一波片302、第一偏振分光棱镜301、第四波片303、后向反射镜304、第三波片305、反射镜306、第二波片307、偏振片309、第二偏振分光棱镜308、第三偏振分光棱镜310、第一光电探测器312、第二光电探测器313和基座2；所述第一偏振分光棱镜301、第二偏振分光棱镜308和第三偏振分光棱镜310固定在基座2上，且第一偏振分光棱镜301的出射面与第三偏振分光棱镜310的一个入射面相邻，第二偏振分光棱镜308的出射面与第三偏振分光棱镜310的另一个入射面相邻；第一光电探测器312和第二光电探测器313位于第三偏振分光棱镜310的出射面方向固定在基座2上；
所述第一波片302的快轴方向与第一偏振分光棱镜301边缘呈45°角设置在第一偏振分光棱镜301的一个入射面，且第一波片302边缘与第一偏振分光棱镜301入射面直角边相切；所述后向反射镜304的边线方向与第一偏 振分光棱镜301底部边线垂直设置在第一偏振分光棱镜301的另一入射面；所述第四波片303的快轴方向与第一偏振分光棱镜301边缘呈45°角设置在第一偏振分光棱镜301和后向反射镜304之间；所述第三波片305的快轴方向与第一偏振分光棱镜301边缘呈45°角设置在第一偏振分光棱镜301的一个出射面，且第三波片305与第一波片302同轴；所述反射镜306与第三波片305同轴设置在背离第一偏振分光棱镜301的第三波片305外侧；所述第二波片307设置在第一偏振分光棱镜301与第三偏振分光棱镜310之间，且位于经反射镜306反射、第三波片305透射和第一偏振分光棱镜301反射后的光束线路上，第二波片307的边缘与第一偏振分光棱镜301的出射面直角边相切；偏振片309的偏振方向与第三偏振分光棱镜310呈45°角设置在第三偏振分光棱镜310的出射面。本实施例中的第一波片302、第三波片305和第四波片303都是四分之一波片，第二波片307为二分之一波片，第一波片302、第二波片307、第三波片305及第四波片303分别与第一偏振分光棱镜301通过范德华力粘接，偏振片309与第三偏振分光棱镜310通过范德华力粘接，后向反射镜304与第四波片303通过紫外固化胶粘接；所述反射镜306与第三波片305通过紫外固化胶粘接。
可以在基座2的上表面分别设置第一偏振分光棱镜301、第二偏振分光棱镜308和第三偏振分光棱镜310的安装凹槽，三个凹槽呈直角三角形布置，其中第三偏振分光棱镜310位于直角点，凹槽采用六点定位方法加工定位，提高定位精度，保证内部镜组相对位置的高精度，然后把第一偏振分光棱镜301、第二偏振分光棱镜308和第三偏振分光棱镜310固定在对应的凹槽上，通过速干胶分别以底面粘接在基座凹槽中。
上述的相位测量装置用于激光干涉光刻系统使用时，用参考光314附加频率为120MHz、以s偏振态经过第一波片302透射变为圆偏振态入射至第一偏振分光棱镜301，第一偏振分光棱镜301的反射光以s偏振态经过第四波片303透射、后向反射镜304反射、第四波片303透射后变为p偏振态经过第一偏振分光棱镜301、第三偏振分光棱镜310及偏振片309透射形成第一路参考光；第一偏振分光棱镜301的透射光经过第三波片305透射、反射镜306反射、第三波片305透射后变为s偏振态经过第一偏振分光棱镜301反射至第二波片307透射后变为p偏振态，经过第三偏振分光棱镜310和偏振片309透 射形成第二路参考光；第一路测量光315、第二路测量光316附加频率均为100MHz、以s偏振态平行从第二偏振分光棱镜308的入射面入射，依次经过第二偏振分光棱镜308反射、第三偏振分光棱镜310反射、偏振片309透射后，再分别与第一路参考光和第二路参考光干涉形成第一测量信号和第二测量信号，两束测量信号分别入射第一光电探测器312和第二光电探测器313变为电信号形式输送解算可得到光束相位。两束干涉测量信号频率相同，均为20MHz频差的干涉信号；当激光干涉光刻曝光周期改变时，第一路测量光315与第二路测量光316间距改变，同时向偏振分光镜中心或边缘偏移，参考光314向偏振分光镜中心或边缘偏移相同距离，可保证输出的测量信号始终保持合束，信号强度并不会随之改变，由此完成对激光干涉光刻变周期曝光的实时条纹控制。
上述快轴方向指波片中传播速度快的光矢量方向。范德华力又称范德瓦尔斯力(van der Waals force)，指分子间作用力。
当然，本申请还可有其它多种实施例，在不背离本申请精神及其实质的情况下，本领域技术人员可根据本申请做出各种相应的改变和变形，但这些相应的改变和变形都属于本申请的权利要求的保护范围。

Claims (8)

  1. 一种用于激光干涉光刻系统的相位测量装置，其特征在于，包括第一波片、第一偏振分光棱镜、第四波片、后向反射镜、第三波片、反射镜、第二波片、偏振片、第二偏振分光棱镜、第三偏振分光棱镜、第一光电探测器、第二光电探测器和基座；所述第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜固定在基座上，且第一偏振分光棱镜的出射面与第三偏振分光棱镜的一个入射面相邻，第二偏振分光棱镜的出射面与第三偏振分光棱镜的另一个入射面相邻；第一光电探测器和第二光电探测器位于第三偏振分光棱镜的出射面方向固定在基座上；
    所述第一波片的快轴方向与第一偏振分光棱镜边缘呈45°角设置在第一偏振分光棱镜的一个入射面，且第一波片边缘与第一偏振分光棱镜入射面直角边相切；所述后向反射镜的边线方向与第一偏振分光棱镜底部边线垂直设置在第一偏振分光棱镜的另一入射面；所述第四波片的快轴方向与第一偏振分光棱镜边缘呈45°角设置在第一偏振分光棱镜和后向反射镜之间；所述第三波片的快轴方向与第一偏振分光棱镜边缘呈45°角设置在第一偏振分光棱镜的一个出射面，且第三波片与第一波片同轴；所述反射镜与第三波片同轴设置在背离第一偏振分光棱镜的第三波片外侧；所述第二波片设置在第一偏振分光棱镜与第三偏振分光棱镜之间，且位于经反射镜反射、第三波片透射和第一偏振分光棱镜反射后的光束线路上，第二波片的边缘与第一偏振分光棱镜的出射面直角边相切；偏振片的偏振方向与第三偏振分光棱镜呈45°角设置在第三偏振分光棱镜的出射面，
    其中，所述第一波片、第三波片和第四波片都是四分之一波片，所述第二波片为二分之一波片，
    其中，参考光以s偏振态入射第一波片透射至第一偏振分光棱镜入射面，经第一偏振分光棱镜后的反射光以s偏振态依次经过第四波片、后向反射镜反射、第四波片后变为p偏振态，再经过第一偏振分光棱镜、第三偏振分光棱镜和偏振片透射形成第一路参考光；经第一偏振分光棱镜后的透射光依次经过第三波片透射、反射镜反射和第三波片透射后变为s偏振态，然后经过第一偏振分光棱镜反射至第二波片透射后变为p偏振态，再经过第三偏振分光棱镜和偏振片透射形成第二路参考光；
    第一路测量光以s偏振态入第二偏振分光棱镜的入射面，依次经过第二偏振分光棱镜和第三偏振分光棱镜反射到偏振片透射，与第一路参考光干涉形成第一测量信号入射第一光电探测器输出；第二路测量光附加频率为以s偏振态入第二偏振分光棱镜的入射面，依次经过第二偏振分光棱镜和第三偏振分光棱镜反射到偏振片透射，与第二路参考光干涉形成第二路测量信号入射第二光电探测器输出。
  2. 根据权利要求1所述的用于激光干涉光刻系统的相位测量装置，其特征在于，还包括外壳，所述外壳罩着第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜并固定在基座。
  3. 根据权利要求1所述的用于激光干涉光刻系统的相位测量装置，其特征在于，所述基座的上表面设置第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜的安装凹槽，第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜固定在基座的凹槽上。
  4. 根据权利要求3所述的用于激光干涉光刻系统的相位测量装置，其特征在于，所述基座上的第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜的安装凹槽采用六点定位方法加工定位。
  5. 根据权利要求1所述的用于激光干涉光刻系统的相位测量装置，其特征在于，所述第一偏振分光棱镜、第二偏振分光棱镜和第三偏振分光棱镜分别与基座通过速干胶粘接。
  6. 根据权利要求1所述的用于激光干涉光刻系统的相位测量装置，其特征在于，所述第一波片、第二波片、第三波片及第四波片分别与第一偏振分光棱镜通过范德华力粘接，偏振片与第三偏振分光棱镜通过范德华力粘接。
  7. 根据权利要求1所述的用于激光干涉光刻系统的相位测量装置，其特征在于，所述后向反射镜与第四波片通过紫外固化胶粘接；所述反射镜与第三波片通过紫外固化胶粘接。
  8. 一种用于激光干涉光刻系统的相位测量装置的使用方法，其特征在于，参考光附加频率为120MHz、以s偏振态入射第一波片透射至第一偏振分光棱镜入射面，经第一偏振分光棱镜后的反射光以s偏振态依次经过第四波片、后向反射镜反射、第四波片后变为p偏振态，再经过第一偏振分光棱镜、第三偏振分光棱镜和偏振片透射形成第一路参考光；经第一偏振分光棱镜后的透 射光依次经过第三波片透射、反射镜反射和第三波片透射后变为s偏振态，然后经过第一偏振分光棱镜反射至第二波片透射后变为p偏振态，再经过第三偏振分光棱镜和偏振片透射形成第二路参考光；
    第一路测量光附加频率为100MHz、以s偏振态入第二偏振分光棱镜的入射面，依次经过第二偏振分光棱镜和第三偏振分光棱镜反射到偏振片透射，与第一路参考光干涉形成第一测量信号入射第一光电探测器输出；第二路测量光附加频率为100MHz、以s偏振态入第二偏振分光棱镜的入射面，依次经过第二偏振分光棱镜和第三偏振分光棱镜反射到偏振片透射，与第二路参考光干涉形成第二路测量信号入射第二光电探测器输出；解算输出的第一测量信号和第二路测量信号得到第一路测量光和第二路测量光的相位。
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