WO2021074737A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- WO2021074737A1 WO2021074737A1 PCT/IB2020/059313 IB2020059313W WO2021074737A1 WO 2021074737 A1 WO2021074737 A1 WO 2021074737A1 IB 2020059313 W IB2020059313 W IB 2020059313W WO 2021074737 A1 WO2021074737 A1 WO 2021074737A1
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- transistor
- insulator
- conductor
- oxide
- layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 354
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 54
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 18
- 230000008878 coupling Effects 0.000 claims abstract description 16
- 238000010168 coupling process Methods 0.000 claims abstract description 16
- 238000005859 coupling reaction Methods 0.000 claims abstract description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 103
- 239000001301 oxygen Substances 0.000 claims description 102
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 99
- 230000005540 biological transmission Effects 0.000 claims description 67
- 229910052782 aluminium Inorganic materials 0.000 claims description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 30
- 229910052735 hafnium Inorganic materials 0.000 claims description 18
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052715 tantalum Inorganic materials 0.000 claims description 12
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 12
- 239000004020 conductor Substances 0.000 description 378
- 239000012212 insulator Substances 0.000 description 364
- 239000010410 layer Substances 0.000 description 261
- 230000006870 function Effects 0.000 description 136
- 239000010408 film Substances 0.000 description 115
- 239000000758 substrate Substances 0.000 description 96
- 239000001257 hydrogen Substances 0.000 description 94
- 229910052739 hydrogen Inorganic materials 0.000 description 94
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 84
- 238000003860 storage Methods 0.000 description 82
- 239000000463 material Substances 0.000 description 61
- 239000013078 crystal Substances 0.000 description 59
- 238000000034 method Methods 0.000 description 57
- 230000004888 barrier function Effects 0.000 description 48
- 238000010586 diagram Methods 0.000 description 47
- 239000012535 impurity Substances 0.000 description 38
- 238000009792 diffusion process Methods 0.000 description 36
- 229910052814 silicon oxide Inorganic materials 0.000 description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 30
- 238000012545 processing Methods 0.000 description 30
- -1 oxygen ions Chemical class 0.000 description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 28
- 239000011701 zinc Substances 0.000 description 28
- 238000004891 communication Methods 0.000 description 27
- 230000002829 reductive effect Effects 0.000 description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 25
- 229910001868 water Inorganic materials 0.000 description 25
- 125000004429 atom Chemical group 0.000 description 24
- 230000008569 process Effects 0.000 description 24
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- 229910052721 tungsten Inorganic materials 0.000 description 23
- 239000010937 tungsten Substances 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 20
- 229910052751 metal Inorganic materials 0.000 description 19
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 17
- 239000000203 mixture Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000010949 copper Substances 0.000 description 15
- 230000005855 radiation Effects 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 229910052738 indium Inorganic materials 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 13
- 239000010936 titanium Chemical group 0.000 description 13
- 238000002441 X-ray diffraction Methods 0.000 description 12
- 150000002431 hydrogen Chemical class 0.000 description 12
- 230000007547 defect Effects 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 229910000449 hafnium oxide Inorganic materials 0.000 description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 10
- 239000002356 single layer Substances 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 239000012528 membrane Substances 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 206010021143 Hypoxia Diseases 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000012466 permeate Substances 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 5
- 238000002003 electron diffraction Methods 0.000 description 5
- 229910001195 gallium oxide Inorganic materials 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000002159 nanocrystal Substances 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical group [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 5
- 229910052726 zirconium Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910052779 Neodymium Inorganic materials 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 4
- 150000001342 alkaline earth metals Chemical class 0.000 description 4
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 229910052712 strontium Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 235000014676 Phragmites communis Nutrition 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 241001125929 Trisopterus luscus Species 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000013473 artificial intelligence Methods 0.000 description 3
- 229910002090 carbon oxide Inorganic materials 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910001930 tungsten oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 241000156302 Porcine hemagglutinating encephalomyelitis virus Species 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 239000004760 aramid Substances 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 230000002500 effect on skin Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012916 structural analysis Methods 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical group [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 210000002925 A-like Anatomy 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 244000273256 Phragmites communis Species 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013523 data management Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000502 dialysis Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000002657 fibrous material Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/383—Impedance-matching networks comprising distributed impedance elements together with lumped impedance elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/8258—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213, H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0078—Constructional details comprising spiral inductor on a substrate
Definitions
- One aspect of the present invention relates to a semiconductor device.
- one aspect of the present invention is not limited to the above technical fields.
- the technical field of the invention disclosed in the present specification and the like relates to a product, a method, or a manufacturing method.
- one aspect of the invention relates to a process, machine, manufacture, or composition of matter.
- the semiconductor device refers to all devices that can function by utilizing the semiconductor characteristics. Therefore, semiconductor elements such as transistors and diodes, and circuits including semiconductor elements are semiconductor devices.
- semiconductor elements such as transistors and diodes, and circuits including semiconductor elements are semiconductor devices.
- display devices, light emitting devices, lighting devices, electro-optical devices, communication devices, electronic devices, and the like may include semiconductor elements and semiconductor circuits. Therefore, display devices, light emitting devices, lighting devices, electro-optic devices, image pickup devices, communication devices, electronic devices, and the like may also be referred to as semiconductor devices.
- Information terminals that are easy to carry, such as smartphones, tablet terminals, or goggle-type displays (head-mounted displays), are becoming widespread. With the spread of information terminals, various communication standards have been established. For example, the LTE-Advanced standard called the 4th generation mobile communication system (4G) has been put into operation.
- 4G 4th generation mobile communication system
- IoT Internet of Things
- electronic devices other than information terminals for example, in-vehicle electronic devices, household electric appliances, houses, buildings, or wearable devices
- IoT Internet of Things
- electronic devices such as information terminals are required to improve communication speed.
- Patent Document 1 discloses a semiconductor device formed by stacking transistors containing different semiconductor materials.
- Semiconductor devices compatible with 5G are manufactured using semiconductors that use one type of element such as Si as the main component and compound semiconductors that use multiple types of elements such as Ga and As as the main components. Furthermore, oxide semiconductors, which are a type of metal oxide, are attracting attention.
- Non-Patent Document 1 In oxide semiconductors, CAAC (c-axis aligned crystalline) structures and nc (nanocrystalline) structures that are neither single crystal nor amorphous have been found (see Non-Patent Document 1 and Non-Patent Document 2).
- Non-Patent Document 1 and Non-Patent Document 2 disclose a technique for manufacturing a transistor using an oxide semiconductor having a CAAC structure.
- a semiconductor device for transmitting signals at high speed needs to be provided with an impedance matching circuit for adjusting the characteristic impedance of input and output.
- the impedance matching circuit is composed of a transmission line and a plurality of passive elements, and there is a problem that the transmission line and the passive element require a large area. Further, the impedance matching circuit has a problem of emitting radiation noise.
- One aspect of the present invention is to provide a semiconductor device having a new configuration or the like. Alternatively, one of the issues is to provide a small semiconductor device or the like. Alternatively, one of the issues is to provide a semiconductor device having good productivity.
- One aspect of the present invention is a semiconductor device having a second layer on the first layer via a metal oxide.
- the first layer has a first transistor having a first semiconductor layer containing silicon.
- the second layer has an impedance matching circuit, and the impedance matching circuit has a second transistor having a second semiconductor layer containing gallium.
- the first transistor forms a first coupling capacitance with the metal oxide and the impedance matching circuit forms a second coupling capacitance with the metal oxide.
- the impedance matching circuit is electrically connected to the metal oxide via a second coupling capacitance.
- the metal oxide suppresses the first radiation noise emitted from the impedance matching circuit from affecting the operation of the first transistor.
- the first coupling capacitance and the second coupling capacitance form a combined capacitance, and the combined capacitance can attenuate the second radiation noise emitted by the operation of the first transistor.
- the metal oxide preferably contains at least one of hafnium, aluminum, or tantalum and oxygen.
- the impedance matching circuit has a transmission line and the transmission line has a coplanar waveguide.
- an inductor is formed above the second layer and an antenna is formed above the inductor.
- the second transistor of the amplifier is arranged at a position where it does not overlap with the first transistor.
- One aspect of the present invention is a semiconductor device having a first layer, a second layer, and a third layer.
- the first transistor included in the first layer has a first semiconductor layer containing silicon (Si).
- the second transistor included in the second layer has a second semiconductor layer containing gallium (Ga).
- the third transistor included in the third layer has a third semiconductor layer containing at least one of indium (In) and zinc (Zn).
- the first to third transistors are formed on a substrate containing silicon (Si).
- the first semiconductor layer of the first transistor is formed on the substrate.
- the second semiconductor layer of the second transistor is formed into crystals crystal-grown on the substrate.
- the third semiconductor layer of the third transistor is formed above the first semiconductor layer and the second semiconductor layer.
- the third transistor is arranged at a position having a region overlapping with the first transistor.
- the third transistor is arranged at a position having a region overlapping with the second transistor.
- the semiconductor device further has a fourth layer.
- the fourth transistor included in the fourth layer contains at least one of In and Zn in the fourth semiconductor layer.
- the fourth transistor is preferably arranged at a position having a region overlapping with the third transistor.
- the sensor module is arranged on the opposite side of the metal oxide c to the first layer.
- an impedance matching circuit of a power amplifier in a wiring layer of a silicon transistor, it is possible to provide a semiconductor device that suppresses an increase in the area required for a transmission line and a plurality of passive elements. Can be done. Alternatively, it is possible to provide a semiconductor device that suppresses the influence of radiation noise emitted by the impedance matching circuit. Alternatively, it is possible to provide a semiconductor device having a new configuration or the like. Further, it is possible to provide a small semiconductor device or the like. Alternatively, it is possible to provide a semiconductor device or the like having good productivity.
- FIG. 1 is a diagram illustrating a semiconductor device.
- FIG. 2 is a diagram illustrating a semiconductor device.
- FIG. 3 is a diagram illustrating a semiconductor device.
- FIG. 4 is a diagram illustrating a semiconductor device.
- FIG. 5 is a diagram illustrating a semiconductor device.
- FIG. 6A is a diagram illustrating an electronic device.
- FIG. 6B is a diagram illustrating a semiconductor device.
- FIG. 7 is a diagram illustrating a configuration example of a wireless transmitter / receiver. 8A and 8B are diagrams for explaining a configuration example of the wireless transmitter / receiver.
- FIG. 9 is a diagram illustrating a semiconductor device.
- FIG. 10 is a diagram illustrating a semiconductor device.
- 11A and 11B are circuit diagrams illustrating a power amplifier.
- FIG. 11C and 11D are layout diagrams illustrating a coplanar waveguide.
- FIG. 12 is a diagram illustrating a configuration example of the semiconductor device.
- FIG. 13 is a graph illustrating the electrical characteristics of the transistor.
- FIG. 14 is a circuit diagram illustrating a semiconductor device.
- FIG. 15 is a diagram showing a configuration example of a semiconductor device.
- FIG. 16 is a diagram showing a configuration example of a semiconductor device.
- 17A to 17C are diagrams showing a configuration example of a transistor.
- 18A to 18C are diagrams showing a configuration example of a transistor.
- 19A to 19C are diagrams showing a configuration example of a transistor.
- FIG. 20 is a diagram showing a configuration example of a semiconductor device.
- FIG. 20 is a diagram showing a configuration example of a semiconductor device.
- FIG. 21A is a diagram illustrating classification of the crystal structure of IGZO.
- FIG. 21B is a diagram illustrating an XRD spectrum of a CAAC-IGZO film.
- FIG. 21C is a diagram illustrating a microelectron diffraction pattern of the CAAC-IGZO film.
- FIG. 22A is a top view of the semiconductor wafer.
- FIG. 22B is an enlarged view of the chip.
- FIG. 23A is a flowchart illustrating an example of a manufacturing process of electronic components.
- FIG. 23B is a schematic perspective view of the electronic component.
- FIG. 24 is a diagram showing an example of an electronic device.
- 25A to 25F are diagrams showing an example of an electronic device.
- FIG. 26 is a diagram showing the hierarchical structure of the IoT network and the tendency of the required specifications.
- FIG. 27 is an image diagram of factory automation.
- 28A to 28C are diagrams showing the structure of the OS-FET used in the calculation of the cutoff frequency.
- FIG. 29 is a diagram showing a calculation result of the cutoff frequency of the OS-FET.
- the position, size, range, etc. of each configuration shown in the drawings, etc. may not represent the actual position, size, range, etc. in order to facilitate understanding of the invention. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings and the like.
- the resist mask or the like may be unintentionally reduced due to a process such as etching, but it may not be reflected in the drawing for easy understanding.
- top view also referred to as “plan view”
- perspective view the description of some components may be omitted in order to make the drawing easier to understand.
- electrode and “wiring” do not functionally limit these components.
- an “electrode” may be used as part of a “wiring” and vice versa.
- the terms “electrode” and “wiring” include the case where a plurality of “electrodes” and “wiring” are integrally formed.
- the resistance value of "resistance” may be determined by the length of the wiring.
- the resistance value may be determined by connecting to a conductive layer having a resistivity different from that of the conductive layer used in wiring.
- the resistance value may be determined by doping the semiconductor layer with impurities.
- the "terminal" in the electric circuit means a part where current input or output, voltage input or output, or signal reception or transmission is performed. Therefore, a part of the wiring or the electrode may function as a terminal.
- the term “upper”, “upper”, “lower”, or “lower” does not limit the positional relationship of the components to be directly above or directly below and to be in direct contact with each other. Absent.
- the electrode B on the insulating layer A it is not necessary that the electrode B is formed in direct contact with the insulating layer A, and another configuration is formed between the insulating layer A and the electrode B. Do not exclude those that contain elements.
- the conductive layer D above the conductive layer C it is not necessary that the conductive layer D is formed in direct contact with the conductive layer C, and between the conductive layer C and the conductive layer D. Do not exclude those that contain other components.
- the terms “upper” or “lower” do not exclude cases where the components are arranged diagonally.
- source and drain functions are interchanged depending on operating conditions, such as when transistors with different polarities are used or when the direction of current changes during circuit operation, so which one is the source or drain is limited. Is difficult. Therefore, in the present specification, the terms source and drain can be used interchangeably.
- electrically connected includes a case where it is directly connected and a case where it is connected via "something having some electrical action".
- the "thing having some kind of electrical action” is not particularly limited as long as it enables the exchange of electric signals between the connection targets. Therefore, even when it is expressed as “electrically connected", in an actual circuit, there is a case where there is no physical connection part and only the wiring is extended.
- the "direct connection” includes a case where wirings formed by different conductive layers are connected via contacts and function as one wiring. Therefore, there are cases where different conductive layers contain one or more same elements and cases where different conductive layers contain different elements.
- parallel means, for example, a state in which two straight lines are arranged at an angle of -10 ° or more and 10 ° or less. Therefore, the case of ⁇ 5 ° or more and 5 ° or less is also included.
- vertical and orthogonal mean, for example, a state in which two straight lines are arranged at an angle of 80 ° or more and 100 ° or less. Therefore, the case of 85 ° or more and 95 ° or less is also included.
- the voltage often indicates the potential difference between a certain potential and a reference potential (for example, ground potential or source potential). Therefore, it is often possible to paraphrase voltage and potential. In the present specification and the like, voltage and potential can be paraphrased unless otherwise specified.
- semiconductor Even when the term "semiconductor” is used, for example, if the conductivity is sufficiently low, it has the characteristics of an "insulator". Therefore, it is possible to replace “semiconductor” with “insulator". In this case, the boundary between “semiconductor” and “insulator” is ambiguous, and it is difficult to make a strict distinction between the two. Therefore, the "semiconductor” and “insulator” described herein may be interchangeable.
- ordinal numbers such as “first" and “second” in the present specification and the like are added to avoid confusion of the components, and do not indicate any order or order such as process order or stacking order. ..
- terms that do not have ordinal numbers in the present specification and the like may have ordinal numbers within the scope of claims in order to avoid confusion of components.
- different ordinal numbers may be added within the scope of claims.
- the ordinal numbers may be omitted in the scope of claims.
- the "on state” of the transistor means a state in which the source and drain of the transistor can be regarded as being electrically short-circuited (also referred to as “conduction state”).
- the “off state” of the transistor means a state in which the source and drain of the transistor can be regarded as being electrically cut off (also referred to as “non-conducting state”).
- the "on current” may mean a current flowing between the source and the drain when the transistor is in the on state.
- the “off current” may mean a current flowing between the source and the drain when the transistor is in the off state.
- the high power supply voltage VDD (hereinafter, also simply referred to as “VDD”, “H voltage”, or “H”) refers to the low power supply voltage VSS (hereinafter, simply “VSS”, “L voltage”). , Or also referred to as “L”).
- VSS indicates a power supply voltage having a voltage lower than VDD.
- the ground voltage (hereinafter, also simply referred to as “GND” or “GND voltage”) can be used as VDD or VSS.
- VDD is a ground voltage
- VSS is a voltage lower than the ground voltage
- VDD is a voltage higher than the ground voltage.
- the gate means a part or all of the gate electrode and the gate wiring.
- the gate wiring refers to wiring for electrically connecting the gate electrode of at least one transistor to another electrode or another wiring.
- the source means a part or all of a source area, a source electrode, and a source wiring.
- the source region refers to a region of the semiconductor layer having a resistivity of a certain value or less.
- the source electrode refers to a conductive layer in a portion connected to the source region.
- the source wiring is a wiring for electrically connecting the source electrode of at least one transistor to another electrode or another wiring.
- the drain means a part or all of the drain region, the drain electrode, and the drain wiring.
- the drain region refers to a region of the semiconductor layer having a resistivity of a certain value or less.
- the drain electrode refers to a conductive layer at a portion connected to the drain region.
- the drain wiring refers to wiring for electrically connecting the drain electrode of at least one transistor to another electrode or another wiring.
- H indicating the H voltage
- L indicating the L voltage
- “H” or “L” may be added adjacent to the wiring and the electrodes.
- “H” or “L” may be added with enclosing characters to wirings and electrodes where voltage changes have occurred.
- an “x” symbol may be added over the transistor.
- FIG. 1 is a block diagram showing a configuration of a semiconductor device 10 included in an electronic device.
- the configuration of the semiconductor device illustrated in this specification and the like is an example, and it is not necessary to include all the components.
- the semiconductor device may have necessary components among the components shown in the present specification and the like. Further, it may have a component other than the components shown in the present specification and the like.
- the semiconductor device 10 includes an antenna array 11, a transmission / reception control device 12, a signal processing device 13, a processor 14, a GPU (Graphics Processing Unit) 15, a power supply control device 16, a PLD (Programmable Logic Device) 17, a storage device 18, and the like. And a display device 19.
- the transmission / reception control device 12 will be described in detail with reference to FIG.
- FIG. 2 is a diagram illustrating the semiconductor device 10.
- the semiconductor device 10 has a layer L1, a layer L2, a layer L3, and a layer L4.
- the first transistor included in the layer L1 has a first semiconductor layer containing Si.
- the second transistor included in the layer L2 has a second semiconductor layer containing Ga.
- the third transistor included in the layer L3 has a third semiconductor layer containing at least one of In and Zn.
- the first to third transistors are formed on or above the substrate containing Si.
- the layer L4 is a layer having no semiconductor layer.
- the second transistor included in the layer L2 can further contain at least one of In and Zn.
- the first semiconductor layer of the first transistor is formed on the substrate. Further, the second semiconductor layer of the second transistor is formed into crystals crystal-grown on the substrate. Further, the third semiconductor layer of the third transistor is formed above the first semiconductor layer and the second semiconductor layer. The second semiconductor layer of the second transistor may be formed of the same semiconductor layer as the third semiconductor layer.
- the transmission / reception control device 12 includes a transmission / reception control device 12A and a transmission / reception control device 12B.
- the power supply control device 16 includes a power supply control device 16A and a power supply control device 16B.
- the transmission / reception control device 12 may have a configuration in which the transmission / reception control device 12A is formed on the layer L1 and the transmission / reception control device 12B is formed on the layer L2.
- the power supply control device 16 may have a configuration in which the power supply control device 16A is formed on the layer L1 and the power supply control device 16B is formed on the layer L2.
- the transmission / reception control device 12 and the power supply control device 16 may be required to have transistors having high withstand voltage, high output, low off-current, or high conductance.
- a transistor having characteristics different from those of the first transistor of layer L1 is used for layer L2
- a transistor having electrical characteristics such as high withstand voltage, high output, low off-current, or high conductance may be used for layer L2. it can.
- a transistor having electrical characteristics such as high withstand voltage, high output, or low off-current will be described in detail in the third embodiment.
- the transmission / reception control device 12A, the signal processing device 13, the processor 14, the GPU 15, the power supply control device 16A, the PLD 17, and the like are formed on the layer L1.
- a transmission / reception control device 12B and a power supply control device 16B are formed on the layer L2.
- a storage device 18 and a display device 19 are formed on the layer L3.
- FIG. 2 shows an example in which the antenna array 11 for wireless communication is formed on the layer L4.
- the storage device 18 formed on the layer L3 can be formed by a third transistor having a third semiconductor layer.
- the display device 19 can be formed of a third transistor having a third semiconductor layer different from that of the storage device 18.
- the storage device 18 and the display device 19 may each be formed by stacking a plurality of third transistors.
- the number of stacked third transistors is not limited. For example, two or more third transistors can be laminated and formed.
- FIG. 3 is a diagram for explaining the semiconductor device 10 in detail.
- a transmission / reception control device 12A, a signal processing device 13, a processor 14, a GPU 15, a power supply control device 16A, and a PLD 17 are formed on the layer L1.
- a transmission / reception control device 12B and a power supply control device 16B are formed on the layer L2.
- a storage device 18 is formed on the layer L3A.
- the storage device 18 has storage devices 18A to 18F.
- a display device 19 is formed on the layer L3B.
- the display device 19 has a gate driver 19A and a display area 19B.
- An antenna array 11 for wireless communication is formed on the layer L4.
- the antenna array 11 has a plurality of antennas 11A.
- the transmission / reception control device 12A formed on the layer L1 has a function of processing signals transmitted / received via the antenna 11A. Further, the transmission / reception control device 12B formed on the layer L2 has either a transistor or a diode having an ability to sufficiently supply the electric power used instantaneously by the transmission / reception control device 12A.
- the signal processing device 13 can give a control signal to the gate driver 19A via the layer L3A, and further give image data to the display area 19B. Therefore, the signal processing device 13 can have a function as an image processing device.
- the signal processing device 13 can perform extended conversion of image data by using the GPU 15.
- the processor 14 controls the semiconductor device 10. Further, the GPU 15 can process a part of the calculation at high speed when learning or inferring artificial intelligence (AI: Artificial Intelligence) processed by the signal processing device 13 or the like. As an example, in inference of artificial intelligence, many matrix operations using neural networks are performed. The matrix operation can be processed efficiently and at high speed by using the GPU 15.
- AI Artificial Intelligence
- the power supply control device 16A formed on the layer L1 can control the supply of power to the transmission / reception control device 12, the signal processing device 13, the processor 14, the GPU 15, the PLD 17, the storage device 18, or the display device 19.
- the power supply control device 16B formed on the layer L2 has either a transistor or a diode capable of sufficiently supplying the electric power used by the semiconductor device 10.
- the PLD 17 can provide different functions by updating the logical configuration.
- the PLD 17 can function as a storage device.
- the signal processing device temporarily stores the display data displayed on the display device 19 described later, and can easily detect the difference between the display data and the display data received by the transmission / reception control device 12.
- the PLD 17 can extend some of the computing functions of the signal processing device 13 or the GPU 15. For example, the number of parallel operations can be expanded when performing parallel operations.
- the layer L2 is a layer formed by crystal growth on the layer L1. Therefore, the first transistor included in the layer L1 does not overlap with the second transistor included in the layer L2. Further, the second semiconductor layer of the second transistor preferably has Ga. Further, the second semiconductor layer of the second transistor preferably has nitrogen or oxygen.
- Layer L2 has a transmission / reception control device 12B and a power supply control device 16B.
- the transmission / reception control device 12B can supply a large amount of electric power instantaneously used by the transmission / reception control device 12A.
- the power supply control device 16B supplies power to the transmission / reception control device 12A, the signal processing device 13, the processor 14, the GPU 15, the power supply control device 16A, and the PLD 17 arranged in the layer L1. Further, the power supply control device 16B can supply electric power to the storage device 18 formed on the layer L3A and the display device 19 formed on the layer L3B.
- layer L3 will be described.
- the layer L3 is formed by laminating the layer L3B on the layer L3A.
- the layer L3A formed on the layer L1 will be described.
- the storage device 18A is arranged on the transmission / reception control device 12A. Further, it is preferable that the storage device 18B is arranged on the signal processing device 13. Further, it is preferable that the storage device 18C is arranged on the processor 14. Further, it is preferable that the storage device 18F is arranged on the GPU 15. Further, it is preferable that the storage device 18D is arranged on the power supply control device 16A. Further, it is preferable that the storage device 18E is arranged on the PLD17.
- any one of the storage devices 18A to 18F can function as a data save register. Further, as a different example, any one of the storage devices 18A to 18F can function as a data management memory. Further, as a different example, any one of the storage devices 18A to 18F can function as a FIFO memory (First in First out memory) that absorbs different processing speeds between the respective devices.
- the FIFO memory temporarily stores the data received by the transmission / reception control device 12, and the signal processing device 13 can read the data from the FIFO memory using the processor 14.
- the transmission / reception control device 12 can operate at an operating frequency different from that of the signal processing device 13 or the processor 14.
- the storage device 18E stores a plurality of logical information configured in the PLD 17.
- the storage device 18 has a third transistor.
- the third semiconductor layer of the third transistor preferably contains oxygen and one or more of In, Ga, Sn, or Zn. Therefore, it can be said that the third semiconductor layer of the third transistor has an oxide semiconductor.
- a transistor containing an oxide semiconductor (OS: Oxide Semiconductor), which is a kind of metal oxide, in the semiconductor layer on which the channel of the transistor is formed is referred to as an "OS transistor” or an "OS-FET". It is known that the OS transistor has a small fluctuation in electrical characteristics due to a temperature change. Further, since the OS transistor has a large energy gap in the semiconductor layer, it can exhibit an extremely low off-current characteristic of several yA / ⁇ m (current value per 1 ⁇ m of channel width). Therefore, the OS transistor is preferably applied to a storage device. The OS transistor will be described in detail in the third embodiment.
- the storage device can be called an "OS memory".
- the OS memory can suppress the deterioration of the data held in the OS memory even if the power supply is stopped. Further, since the OS memory can reduce the capacity for holding data, it is possible to provide a storage device suitable for high density. Further, the OS memory can hold the information written in the period of 1 year or more, further 10 years or more by utilizing the extremely low off-current characteristic of the OS transistor. Therefore, the OS memory can be regarded as a non-volatile memory.
- the OS memory is a method of writing an electric charge to a node via an OS transistor, a high voltage required for a conventional flash memory is not required, and a high-speed writing operation can be realized. Also, since no charge is injected or withdrawn into the floating gate or charge capture layer, the OS memory can write and read data virtually unlimited times. The OS memory has less deterioration than the conventional flash memory, and high reliability can be obtained.
- OS memory does not undergo structural changes at the atomic level. Therefore, the OS memory is superior in rewrite resistance to the magnetic memory and the resistance change type memory.
- the off-current of the OS transistor hardly increases even in a high temperature environment. Specifically, the off-current hardly increases even at an environmental temperature of room temperature or higher and 200 ° C. or lower. In addition, the on-current does not easily decrease even in a high temperature environment. Further, the OS transistor has a high dielectric strength between the source and the drain. By using an OS transistor as a transistor constituting a semiconductor device, operation is stable even in a high temperature environment, and a semiconductor device with good reliability can be realized.
- the OS transistor can be formed by using a sputtering method during the BEOL (Back end of line) process of forming the wiring of the semiconductor device. Therefore, one semiconductor device 10 can be formed by using transistors having different transistor characteristics. In other words, by using an OS transistor, a SoC (System on a chip) can be easily formed.
- BEOL Back end of line
- the OS transistor can have a back gate.
- the back gate is arranged so as to sandwich the channel forming region of the third semiconductor layer between the gate and the back gate.
- Backgates can function like gates. Further, the threshold voltage of the transistor can be changed by changing the voltage of the back gate.
- the voltage of the back gate may be the same voltage as that of the gate, and may be GND or an arbitrary voltage.
- the gate and the back gate are generally formed of a conductive layer, they have a function of preventing an electric field generated outside the transistor from acting on the semiconductor layer on which a channel is formed (particularly, an electrostatic shielding function against static electricity). .. That is, it is possible to prevent fluctuations in the electrical characteristics of the transistor due to the influence of an external electric field such as static electricity.
- the display device 19 is formed by using the third transistor included in the layer L3B.
- the display area 19B has a plurality of pixels, and each pixel has a light emitting element.
- the light emitting element it is preferable to use an organic light emitting element (OLED: Organic Light Emitting Device) or an LED (Light Emitting Device).
- the antenna array 11 has a plurality of antennas 11A, and the antenna 11A is preferably formed of a conductive layer having translucency.
- the translucent conductive layer indium oxide, ITO, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like can be used.
- FIG. 4 is a diagram illustrating a semiconductor device 10A having a configuration different from that of the semiconductor device 10 shown in FIG.
- the same reference numerals are commonly used between different drawings for the same parts or parts having similar functions, and the repeated description thereof will be omitted.
- the semiconductor device 10A is different from the semiconductor device 10 in that the layer L3B has a display device 19, a storage device 18G, and a storage device 18H.
- the display device 19, the storage device 18G, and the third transistor included in the storage device 18H are formed in the same process.
- FIG. 5 is a diagram for explaining the semiconductor device 10A in detail.
- the semiconductor device 10A is different from the semiconductor device 10 shown in FIG. 3 in that the layer L3B has a portion overlapping the layer L2.
- the storage device 18G is arranged on the transmission / reception control device 12B.
- the storage device 18G stores the setting information of the transmission / reception control device 12B.
- the storage device 18H is arranged on the power supply control device 16B.
- the storage device 18H stores the setting information of the power supply control device 16B. It is preferable that the storage device 18G and the storage device 18H use an OS memory.
- FIG. 6A is a block diagram showing a configuration of a semiconductor device 10B different from the semiconductor device 10 shown in FIG.
- the semiconductor device 10B shown in FIG. 6A has a sensor module 20.
- FIG. 6B is a diagram illustrating a semiconductor device 10B having a configuration different from that of the semiconductor device 10 shown in FIG.
- the semiconductor device 10B has a layer L5 on the side opposite to the side on which the first transistor of the layer L1 is formed, and the sensor module 20 is arranged on the layer L5.
- the sensor module 20 can be electrically connected to the layer L1 using a through electrode (TSV: Through Silicon Via).
- TSV Through Silicon Via
- the sensor module 20 can use an image sensor, an infrared sensor, an ultrasonic sensor, a touch sensor, or the like.
- the semiconductor device 10B can display the information captured by the sensor module as an image by the display device 19.
- the semiconductor device 10B can be configured as a SoC for wireless communication, a signal processing that performs extended conversion of image data, a display device, and a sensor module, the number of parts can be reduced. Therefore, the semiconductor device 10B is suitable for use in a mobile terminal including a goggle type display for which a small and lightweight semiconductor device is required.
- FIG. 7 is a diagram illustrating a configuration example of the wireless transmitter / receiver 900 as an example of the transmission / reception control device 12.
- the wireless transmitter / receiver 900 includes a low noise amplifier (LNA: Low Noise Amplifier) 901, a bandpass filter (BPF: BandPass Filter) 902, a mixer (MIX: Mixer) 903, a bandpass filter 904, and a demodulator (DEM: Demodulator).
- LNA Low Noise Amplifier
- BPF BandPass Filter
- MIX Mixer
- DEM demodulator
- PA Power Amplifier
- FM Modulator
- duplexer Duplexer
- LO Local oscillator
- the signal 941 transmitted from another semiconductor device, base station, or the like is input to the low noise amplifier 901 as a received signal via the antenna 931 and the duplexer 921.
- the duplexer 921 has a function of realizing transmission and reception of wireless signals with one antenna.
- the low noise amplifier 901 has a function of amplifying a weak reception signal into a signal having a strength that can be processed by the wireless transmitter / receiver 900.
- the signal 941 amplified by the low noise amplifier 901 is supplied to the mixer 903 via the bandpass filter 902.
- the bandpass filter 902 has a function of attenuating a frequency component outside the required frequency band from the frequency components included in the signal 941 and passing the required frequency band.
- the mixer 903 has a function of mixing the signal 941 that has passed through the bandpass filter 902 and the signal 943 generated by the local oscillator 922 in a superheterodyne manner.
- the mixer 903 mixes the signal 941 and the signal 943, and supplies a signal having a frequency component of the difference between the two and a frequency component of the sum to the bandpass filter 904.
- the bandpass filter 904 has a function of passing one of the two frequency components. For example, pass the frequency component of the difference.
- the bandpass filter 904 also has a function of removing noise components generated in the mixer 903.
- the signal that has passed through the bandpass filter 904 is supplied to the demodulator 905.
- the demodulator 905 has a function of converting the supplied signal into a control signal, a data signal, or the like and outputting the demodulator 905.
- the signal output from the demodulator 905 is supplied to various processing devices (arithmetic device, storage device, etc.).
- the modulator 915 has a function of generating a basic signal for transmitting a control signal, a data signal, or the like from the wireless transmitter / receiver 900 to another semiconductor device, a base station, or the like.
- the basic signal is supplied to the mixer 913 via the bandpass filter 914.
- the bandpass filter 914 has a function of removing a noise component generated when a fundamental signal is generated by the modulator 915.
- the mixer 913 has a function of mixing the basic signal that has passed through the bandpass filter 914 and the signal 944 generated by the local oscillator 922 in a superheterodyne manner.
- the mixer 913 mixes the basic signal and the signal 944, and supplies a signal having a frequency component of the difference between the two and a frequency component of the sum to the bandpass filter 912.
- the bandpass filter 912 has a function of passing one of the two frequency components. For example, let the sum frequency component pass.
- the bandpass filter 912 also has a function of removing noise components generated in the mixer 913.
- the signal that has passed through the bandpass filter 912 is supplied to the power amplifier 911.
- the power amplifier 911 has a function of amplifying the supplied signal and generating a signal 942.
- the signal 942 is radiated to the outside from the antenna 931 via the duplexer 921.
- the wireless transmitter / receiver 900A which is a modification of the wireless transmitter / receiver 900 described above, will be described with reference to FIGS. 8A and 8B. In order to reduce the repetition of the description, the differences from the wireless transmitter / receiver 900 will be mainly described.
- the wireless transmitter / receiver 900A has a plurality of antennas 931 in order to support the 5G communication standard. It also has a plurality of duplexers 921, a plurality of low noise amplifiers 901, and a plurality of power amplifiers 911. Further, the wireless transmitter / receiver 900A has a decoder circuit 906 (DEC) and a decoder circuit 916.
- DEC decoder circuit 906
- FIG. 8A shows a case where five antennas 931, a common device 921, a low noise amplifier 901, and a power amplifier 911 are provided.
- the first antenna 931 is referred to as an antenna 931 [1]
- the fifth antenna 931 is referred to as an antenna 931 [5].
- the common device 921, the low noise amplifier 901, and the power amplifier 911 are also described in the same manner as the antenna 931.
- the number of antennas 931, the duplexer 921, the low noise amplifier 901, and the power amplifier 911 is not limited to five, respectively.
- the antenna 931 [1] is electrically connected to the common device 921 [1].
- the duplexer 921 [1] is electrically connected to the low noise amplifier 901 [1] and the power amplifier 911 [1].
- the antenna 931 [5] is electrically connected to the duplexer 921 [5].
- the duplexer 921 [5] is electrically connected to the low noise amplifier 901 [5] and the power amplifier 911 [5].
- the 2nd to 4th antennas 931 are also electrically connected to the 2nd to 4th commoner 921.
- the second to fourth duplexers 921 are also electrically connected to the second to fourth low noise amplifiers 901 and the second to fourth power amplifiers 911.
- the decoder circuit 906 is electrically connected to a plurality of low noise amplifiers 901. In FIG. 8A, five low noise amplifiers 901 are connected to the decoder circuit 906. Further, the decoder circuit 916 is electrically connected to a plurality of power amplifiers 911. In FIG. 8A, five power amplifiers 911 are connected to the decoder circuit 916.
- the decoder circuit 906 has a function of selecting one or a plurality of low noise amplifiers 901 [1] to low noise amplifiers 901 [5]. Further, the decoder circuit 906 has a function of sequentially selecting the low noise amplifier 901 [1] to the low noise amplifier 901 [5]. Similarly, the decoder circuit 916 has a function of selecting one or more of the power amplifiers 911 [1] and the power amplifiers 911 [5]. Further, the decoder circuit 916 has a function of sequentially selecting the power amplifier 911 [1] to the power amplifier 911 [5].
- FIG. 8B shows a connection example of the decoder circuit 906 and the low noise amplifier 901 [1] and the low noise amplifier 901 [2].
- the decoder circuit 906 is electrically connected via a storage element 111 (referred to as a storage element 111 [1]) included in the low noise amplifier 901 [1] and a terminal 124 to which the storage element 111 [1] is electrically connected. Connected to. Further, the decoder circuit 906 is provided via a storage element 111 (referred to as a storage element 111 [2]) included in the low noise amplifier 901 [2] and a terminal 124 to which the storage element 111 [2] is electrically connected. It is electrically connected.
- a storage element 111 referred to as a storage element 111 [2]
- the storage element 111 has a transistor 112 and a capacity 113.
- the gate of the transistor 112 is electrically connected to the terminal 124.
- One of the source and drain of the transistor 112 is electrically connected to the terminal 123.
- the other of the source or drain of the transistor 112 is electrically connected to one of the electrodes of capacitance 113 and to the gate of the transistor 115.
- the node 114 is formed on the wiring where the gate of the transistor 115 is electrically connected to the source or drain of the transistor 112 and the electrode of the capacitance 113.
- the terminal 124 is electrically connected to one of the source and the drain of the transistor 116 of the decoder circuit 906.
- the transistor 112 is preferably an OS transistor. Further, the storage element 111 using the OS transistor can be rephrased as an OS memory.
- the terminal 123 to which the storage element 111 [1] is electrically connected and the terminal 123 to which the storage element 111 [2] is electrically connected are electrically connected to the wiring 126.
- the voltage (charge) written to the node 114 is supplied via the wiring 126.
- the decoder circuit 906 has a function of supplying a signal for turning on the transistor 112 or a signal for turning it off to a terminal 124 which is electrically connected to an arbitrary storage element 111.
- a different voltage can be written to the node 114 for each storage element 111. That is, a voltage suitable for each of the plurality of low noise amplifiers 901 can be written to the node 114.
- the decoder circuit 916 also functions in the same manner as the decoder circuit 906 for a plurality of power amplifiers 911.
- the transmission / reception control device has a power amplifier for transmitting a high-frequency signal, and the transmitted signal is generated by a signal processing device, or a signal generated from the signal processing device and a signal generated by an oscillator are mixed using a mixer. Is generated.
- a power amplifier operating in a high frequency band is required to reduce signal loss in a transmission line. Further, it is required that the radiation noise radiated from the power amplifier does not affect other circuits (hereinafter, the circuit includes transistors or wirings constituting the circuit) or the like. Further, the power amplifier is required to prevent the power amplifier from being affected by the radiation noise radiated by other circuits.
- the power amplifier corresponds to the power amplifier 911 of FIG.
- FIG. 9 is a diagram illustrating the semiconductor device 10B.
- the semiconductor device 10A is used, and the same reference numerals are commonly used between different drawings for the same parts or parts having the same functions, and the repeated description thereof will be omitted.
- the power amplifier included in the transmission / reception control device 12B is configured by using the OS transistor included in the layer L3A, and the inductor 12C is formed by the layer L3B.
- the inductor 12C can be formed in the same process as the wiring layer formed by the display device 19.
- the inductor 12C may be formed of layer L3A.
- the inductor 12C can be formed by utilizing the wiring layer of the layer L3A on which the power amplifier is formed.
- the power amplifier has a transmission line for connecting to the OS transistor.
- the characteristic impedance when the power amplifier receives the signal and the characteristic impedance when the power amplifier sends out the signal can be shared and matched even in a wide frequency band.
- the state in which shared matching can be obtained even in a frequency band having a wide characteristic impedance is preferably an error in which the characteristic impedance when the signal is sent out with respect to the characteristic impedance on the side receiving the signal is within 10%. More preferably, the error is within 5%. More preferably, the error is within 3%.
- the transmission line of the power amplifier has an impedance matching circuit for adjusting the characteristic impedance.
- the impedance matching circuit is composed of a transmission line and a plurality of passive elements.
- the impedance matching circuit may include a transistor.
- the transmission line contains components such as resistors, inductors, and capacitances. Therefore, in order to adjust the characteristic impedance of the transmission line, it is preferable to use a plurality of passive elements.
- the passive element has a problem that a large area is required for the transistor.
- Transmission lines that transmit high-frequency signals with less loss include coplanar waveguides, coplanar lines with grounds, microstrip lines, slit lines, and SIW (silicon in waveguide). Although the coplanar waveguide will be described in this embodiment, it can be similarly applied to a microstrip line.
- the coplanar waveguide is a transmission line that has a structure in which a linear transmission line is formed on the surface of a conductor formed on a dielectric substrate and transmits electromagnetic waves.
- the electromagnetic wave signal can be rephrased as a high frequency signal. Hereinafter, it will be described as a high frequency signal.
- the coplanar waveguide also functions as part of an impedance matching circuit when dealing with high frequency signals.
- the coplanar waveguide is suitable for a wide range of adjustment because the characteristic impedance can be adjusted by using the film thickness of the conductor, the film quality, the distance between the conductors, and the like.
- the coplanar waveguide will be described in detail with reference to FIGS. 11C and 11D.
- the impedance matching circuit uses a coplanar waveguide as a transmission line.
- the coplanar waveguide formed on a plane radiates radiation noise in the vertical direction.
- the radiation noise radiated by the power amplifier may affect the operation of the circuit and cause a malfunction.
- the radiation noise radiated by the circuit may affect the impedance matching circuit, change the characteristic impedance of the impedance matching circuit, and increase the transmission loss.
- Impedance matching circuits can adjust the characteristic impedance using passive elements such as capacitances, resistors, and inductors. Therefore, the impedance matching circuit has a larger area than the circuit using the transistor. For example, when the transmission / reception control device 12B is formed as a semiconductor device integrated with the signal processing device 13, the influence of radiation noise must be taken into consideration. Further, in the transmission / reception control device 12B, the size of the device may increase depending on the size of the passive element included in the impedance matching circuit.
- FIG. 10 is a diagram for explaining the semiconductor device 10B in detail.
- the main difference from FIG. 5 is that the transmission / reception control device 12B is provided on the layer L3A. It is preferable that the circuit included in the layer L1 is not arranged at a position overlapping the power amplifier included in the transmission / reception control device 12B.
- 11A and 11B are circuit diagrams illustrating the power amplifier 911.
- the power amplifier 911 has an input terminal Sin, an output terminal Pout, a transistor Tr1, an impedance matching circuit Z1, and an impedance matching circuit Z2.
- the impedance matching circuit Z1 has a capacitance C1, an inductor In1, and a coplanar waveguide CPW3a.
- the impedance matching circuit Z2 has a capacitance C2, an inductor In2, a coplanar waveguide CPW2, and a coplanar waveguide CPW3b.
- the coplanar waveguide CPW2 When the two-terminal coplanar waveguide is described, it may be described as the coplanar waveguide CPW2, and when the three-terminal coplanar waveguide is described, it may be described as the coplanar waveguide CPW3. Further, the coplanar waveguide CPW3 has terminals 1 to 3, and the coplanar waveguide CPW2 has terminals 1 and 2.
- the input terminal Sin is electrically connected to one of the electrodes of the capacitance C1.
- the other electrode of capacitance C1 is electrically connected to terminal 1 of the coplanar waveguide CPW3a.
- the terminal 2 of the coplanar waveguide CPW3a is electrically connected to the gate of the transistor Tr1.
- the terminal 3 of the coplanar waveguide CPW3a is electrically connected to one of the electrodes of the inductor In1.
- the other electrode of the inductor In1 is electrically connected to the wiring V1.
- One of the source and drain of the transistor Tr1 is electrically connected to the wiring VG.
- the other side of the source or drain of the transistor Tr1 is electrically connected to the terminal 1 of the coplanar waveguide CPW3b.
- the terminal 2 of the coplanar waveguide CPW3b is electrically connected to one of the electrodes of the inductor In2.
- the terminal 3 of the coplanar waveguide CPW3b is electrically connected to one of the electrodes of the capacitance C2.
- the other electrode of the inductor In2 is electrically connected to the wiring V2.
- the other electrode of the capacitance C2 is electrically connected to the terminal 1 of the coplanar waveguide CPW2.
- the terminal 2 of the coplanar waveguide CPW2 is electrically connected to the output terminal Pout.
- the transistor Tr1 is preferably an OS transistor.
- the transistor Tr1 shown in FIG. 11B shows an example having a back gate. By electrically connecting the back gate of the transistor Tr1 to the source of the transistor Tr1, the threshold value on the back gate side of the transistor Tr1 can be fixed.
- the back gate of the transistor Tr1 may be electrically connected to other wiring to give a fixed potential.
- the impedance matching circuit Z1 is preferably adjusted to have the same impedance as the impedance matching circuit Z2.
- the impedance characteristics of the impedance matching circuit Z1 and the impedance matching circuit Z2 are preferably adjusted to 50 ohms using a capacitance, an inductor, a coplanar waveguide, and the like.
- FIG. 11C is a layout diagram illustrating the coplanar waveguide CPW2 as an example.
- the coplanar waveguide CPW2 has a structure in which a linear transmission line is formed on the surface of a conductor formed on a dielectric substrate.
- the coplanar waveguide CPW2 has an inner conductor 201a arranged so as to be sandwiched between the outer conductor 202a and the outer conductor 202b.
- the distance between the outer conductor 202a and the inner conductor 201a is preferably equal to the distance between the outer conductor 202b and the inner conductor 201a.
- a capacitive component is formed between the inner conductor 201a and the outer conductor 202a or the outer conductor 202b.
- the inner conductor 201a is a conductor formed in the same process as the outer conductor 202a and the outer conductor 202b.
- the inner conductor 201a corresponds to a transmission line and has a terminal 1 and a terminal 2.
- the inner conductor 201a corresponding to the transmission line corresponds to the resistance component and the inductor component.
- the inner conductor 201a has a skin effect.
- the skin effect is a phenomenon in which when a high-frequency signal is passed through the inner conductor 201a, the current density of the inner conductor 201a is high on the surface of the inner conductor 201a and decreases as the distance from the surface of the inner conductor 201a decreases.
- the higher the frequency the more the current concentrates on the surface, so the AC resistance of the conductor increases. Therefore, the characteristic impedance of the coplanar waveguide CPW2 has a peak with respect to the frequency. Therefore, it is preferable to select the type of the element contained in the conductor, the film thickness of the conductor, the distance between the inner conductor and the outer conductor, and the like according to the characteristic impedance required for the coplanar waveguide
- the outer conductor 202a of the coplanar waveguide CPW2 preferably has either one or both of the terminals 203a and 203b, and the outer conductor 202b may have either one or both of the terminals 203c and 203d. preferable. Further, it is preferable that the outer conductor 202a and the outer conductor 202b are given a fixed potential via the terminals 203a to 203d. For example, 0 V (reference potential) is applied to the outer conductor 202a and the outer conductor 202b.
- FIG. 11D is a layout diagram illustrating the coplanar waveguide CPW3 as an example.
- the coplanar waveguide CPW3 is a transmission line having a curved portion (branch).
- the coplanar waveguide CPW3 has an outer conductor 202a, an outer conductor 202b, and an inner conductor 201b arranged so as to be sandwiched between the outer conductor 202a and the outer conductor 202c.
- the distance between the outer conductor 202a and the inner conductor 201b is preferably equal to the distance between the outer conductor 202b and the inner conductor 201b, and preferably equal to the distance between the outer conductor 202c and the inner conductor 201b.
- a capacitive component is formed between the inner conductor 201a and the outer conductor 202a, the outer conductor 202b, or the outer conductor 202c.
- the inner conductor 201b is a conductor formed in the same process as the outer conductor 202a, the outer conductor 202b, and the outer conductor 202c.
- the inner conductor 201b corresponds to a transmission line and has a terminal 1, a terminal 2, and a terminal 3.
- the inner conductor 201b corresponding to the transmission line corresponds to the resistance component and the inductor component.
- the coplanar waveguide CPW3 having a bent portion may be provided with an offset region in which one of the capacitance components of the bent portion is large and the other is small. By changing the capacitance component, the magnitude of the electromagnetic field generated by the high-frequency signal traveling on the transmission line changes, and it is possible to absorb changes such as bends.
- FIG. 12 is a schematic cross-sectional view of the semiconductor device 10B.
- the semiconductor device 10B has a layer L1, a layer L3A, a layer L3B, and a layer L4.
- Layer L1 has Si-Layer and BEOL-Layer.
- the Si-Layer has a substrate 311.
- the channel formation region of the transistor 550 formed on the Si-Layer preferably contains silicon.
- the transistor 550 will be described in detail in the third embodiment.
- the BEAL-Layer includes a plurality of wiring layers.
- FIG. 12 shows an example in which BEAL-Layer has a wiring Mn.
- the layer L3A, the layer L3B, and the layer L4 may be paraphrased as the wiring layer of the transistor included in the layer L1.
- Layer L3A has an OS-Layer.
- Layer L3A has a transistor Tr.
- the transistor Tr is preferably an OS transistor.
- the OS transistor will be described in detail in the third embodiment.
- the layer L3A is formed on the layer L1 via the insulator 514.
- Insulator 514 is a metal oxide containing at least one of hafnium, aluminum, or tantalum and oxygen.
- hafnium oxide or aluminum oxide has a higher relative permittivity than silicon oxide or silicon nitride. When the relative permittivity of the insulator is large, most of the electromagnetic waves are absorbed by the insulator or reflected by the insulator.
- the outer conductor 202a and the outer conductor 202b when a high frequency signal is given to the inner conductor 201a, the outer conductor 202a and the outer conductor 202b generate a system in which they are coupled via the coupling capacitance CC1 and the coupling capacitance CC2. Therefore, the outer conductor 202a and the outer conductor 202b can consider the space formed between the outer conductor 202a and the outer conductor 514 as a waveguide.
- the insulator 514 can reduce the influence of radiation noise on the transistor 550 formed on the layer L1. Further, the influence of the radiation noise emitted by the transistor 550 can be reduced by the insulator 514.
- the inner conductor 201 is formed with a combined capacitance by connecting a plurality of coupling capacitances in series with the transistor 550.
- the smaller the capacity value of the combined capacity the more preferable. For example, as the capacitance value of the combined capacitance becomes smaller, the radiation noise is attenuated and the influence of the radiation noise becomes smaller.
- the insulator 514 has a barrier property against oxygen and hydrogen contained in the layer L1.
- the barrier property will be described in detail with reference to the third embodiment.
- Layer L3B has CPW-Layer and INDUCTOR-Layer.
- an inductor 12C which is a passive element and a coplanar waveguide CPW are formed as components of an impedance matching circuit.
- the inductor 12C may be formed by using a plurality of conductive layers.
- the inductor 12C may be formed in the same process as the coplanar waveguide CPW.
- the inductor 12C can be easily connected to the coplanar waveguide CPW3 via the inductor 12C1.
- Layer L4 has ANTENA-Layer.
- the ANTENA-Layer preferably has an antenna array 11 for transmitting a high frequency signal.
- the antenna array 11 has a plurality of antennas 11A and is electrically connected to the coplanar waveguide CPW2.
- FIG. 13 is a graph illustrating the electrical characteristics of the transistor. Transistors that handle high frequency signals preferably have high conductance.
- the horizontal axis of the graph shown in FIG. 13 shows the VDS voltage between the source and drain of the transistor, and the vertical axis shows the VGS voltage between the source and gate of the transistor.
- the graph is displayed using a contour graph, and the unit of data is microsiemens [ ⁇ S].
- Region S1 is in the range of 10 ⁇ S or more and 11 ⁇ S or less.
- the region S2 is a range of 9 ⁇ S or more and smaller than 10 ⁇ S.
- the region S3 is a range of 8 ⁇ S or more and smaller than 9 ⁇ S.
- the region S4 is a range of 7 ⁇ S or more and smaller than 8 ⁇ S.
- the region S5 is a range of 6 ⁇ S or more and smaller than 7 ⁇ S.
- the region S6 is a range of 5 ⁇ S or more and smaller than 6 ⁇ S.
- the region S7 is a range of 4 ⁇ S or more and smaller than 5 ⁇ S.
- the region S8 is a range of 3 ⁇ S or more and smaller than 4 ⁇ S.
- the region S9 is a range of 2 ⁇ S or more and smaller than 3 ⁇ S.
- the region S10 is a range of 1 ⁇ S or more and smaller than 2 ⁇ S.
- the transistor has a region where the conductance value is high with respect to the voltage VDS. Therefore, it is preferable to use the region S1 or region S2 in which the voltage VGS is high and the voltage VDS is high. As an example, from the electrical characteristics of the transistor shown in FIG. 13, it is preferable to apply 2.3V to the wiring V1 of the power amplifier 911 of FIG. 11A and 2.5V to the wiring V2.
- FIG. 14 is a circuit diagram illustrating a power amplifier.
- the power amplifier 911 is used, and the same reference numerals are commonly used between different drawings for the same part or the part having the same function, and the repeated description thereof is omitted. There is.
- the power amplifier 911A is different from the power amplifier 911 in that it has a transistor Tr2, an impedance matching circuit Z2a, and an impedance matching circuit Z3.
- the impedance matching circuit Z2a has a capacitance C2, an inductor In2, an inductor In3, a coplanar waveguide CPW3b, and a coplanar waveguide CPW3c.
- the impedance matching circuit Z3 has a capacitance C3, an inductor In4, a coplanar waveguide CPW3d, and a coplanar waveguide CPW2.
- the input terminal Sin is electrically connected to one of the electrodes of the capacitance C1.
- the other electrode of capacitance C1 is electrically connected to terminal 1 of the coplanar waveguide CPW3a.
- the terminal 2 of the coplanar waveguide CPW3a is electrically connected to the gate of the transistor Tr1.
- the terminal 3 of the coplanar waveguide CPW3a is electrically connected to one of the electrodes of the inductor In1.
- the other electrode of the inductor In1 is electrically connected to the wiring V1.
- One of the source and drain of the transistor Tr1 is electrically connected to the wiring VG.
- the other side of the source or drain of the transistor Tr1 is electrically connected to the terminal 1 of the coplanar waveguide CPW3b.
- the terminal 2 of the coplanar waveguide CPW3b is electrically connected to one of the electrodes of the inductor In2.
- the terminal 3 of the coplanar waveguide CPW3b is electrically connected to one of the electrodes of the capacitance C2.
- the other electrode of the inductor In2 is electrically connected to the wiring V2.
- the other electrode of the capacitance C2 is electrically connected to the terminal 1 of the coplanar waveguide CPW3c.
- the terminal 2 of the coplanar waveguide CPW3c is electrically connected to the gate of the transistor Tr2.
- the terminal 3 of the coplanar waveguide CPW3c is electrically connected to one of the electrodes of the inductor In3.
- the other electrode of the inductor In3 is electrically connected to the wiring V3.
- One of the source and drain of the transistor Tr2 is electrically connected to the wiring VG.
- the other side of the source or drain of the transistor Tr2 is electrically connected to the terminal 1 of the coplanar waveguide CPW3d.
- the terminal 2 of the coplanar waveguide CPW3d is electrically connected to one of the electrodes of the inductor In4.
- the terminal 3 of the coplanar waveguide CPW3d is electrically connected to one of the electrodes of the capacitance C3.
- the other electrode of the inductor In4 is electrically connected to the wiring V4.
- the other electrode of capacitance C3 is electrically connected to terminal 1 of the coplanar waveguide CPW2.
- the terminal 2 of the coplanar waveguide CPW2 is electrically connected to the output terminal Pout.
- the transistor Tr1 and the transistor Tr2 are preferably OS transistors.
- the transistor Tr1 and the transistor Tr2 can have a back gate.
- the back gate of the transistor Tr1 is electrically connected to the source of the transistor Tr2, so that the threshold value on the back gate side of the transistor Tr2 can be fixed.
- the back gates of the transistor Tr1 and the transistor Tr2 may be electrically connected to other wirings to give a fixed potential.
- the impedance matching circuit Z1 is preferably adjusted so as to have the same impedance as the impedance matching circuit Z2a and the impedance matching circuit Z3.
- the impedance characteristics of the impedance matching circuit Z1, the impedance matching circuit Z2a, and the impedance matching circuit Z3 are preferably adjusted to 50 ohms using a capacitance, an inductor, a coplanar waveguide, and the like.
- FIG. 15 shows a part of the cross-sectional structure of the semiconductor device.
- the semiconductor device shown in FIG. 15 includes a transistor 550, a transistor 500, a transistor 650, and a capacity of 600.
- 17A is a cross-sectional view of the transistor 500 in the channel length direction
- FIG. 17B is a cross-sectional view of the transistor 500 in the channel width direction
- FIG. 17C is a cross-sectional view of the transistor 550 in the channel width direction.
- the transistor 500 corresponds to the transistor 112 shown in the above embodiment
- the transistor 550 corresponds to the transistor 116
- the transistor 650 corresponds to the transistor 115.
- the capacity 600 corresponds to the capacity 113.
- the wiring 2001 to 2006 can be electrically connected to other transistors or the like.
- the wiring 2005 is electrically connected to the wiring 2006.
- the range of a transistor is a range including a channel forming region of the transistor and a region that functions as a source or drain of the transistor.
- the transistor 500 when the transistor 500 is arranged at a position overlapping the transistor 550, a part of one region of the source or drain of the transistor 500 and one region of the source or drain of the transistor 550 as shown in FIG. Can be said to be placed at overlapping positions. As a different example, it can be said that a part of one region of the source or drain of the transistor 500 is arranged so as to overlap one of the source or drain of the transistor 650.
- FIG. 15 shows an example in which the transistor 500 is arranged at a position where it overlaps with each of the transistor 550 and the transistor 650 for the sake of explanation.
- the transistor 550 is a transistor included in the layer L1
- the transistor 650 is a transistor included in the layer L2
- the transistor 500 is a transistor included in the layer L3.
- Transistor 500 is an OS transistor.
- the transistor 500 has an extremely small off current. Therefore, it is possible to hold the data voltage or electric charge written to the storage node via the transistor 500 for a long period of time. That is, since the refresh operation frequency of the storage node is reduced or the refresh operation is not required, the power consumption of the semiconductor device can be reduced.
- the transistor 500 is provided above the transistor 550, and the capacitance 600 is provided above the transistor 550 and the transistor 500.
- the transistor 550 is provided on the substrate 311 and has a semiconductor region 313 composed of a conductor 316, an insulator 315, and a part of the substrate 311, a low resistance region 314a functioning as a source region or a drain region, and a low resistance region 314b. ..
- the transistor 550 As shown in FIG. 17C, in the transistor 550, the upper surface of the semiconductor region 313 and the side surface in the channel width direction are covered with the conductor 316 via the insulator 315.
- the transistor 550 By making the transistor 550 a Fin type in this way, the on-characteristics of the transistor 550 can be improved by increasing the effective channel width. Further, since the contribution of the electric field of the gate electrode can be increased, the off characteristic of the transistor 550 can be improved.
- the transistor 550 may be either a p-channel transistor or an n-channel transistor.
- a semiconductor such as a silicon-based semiconductor in a region in which a channel of the semiconductor region 313 is formed, a region in the vicinity thereof, a low resistance region 314a serving as a source region or a drain region, a low resistance region 314b, and the like.
- It preferably contains crystalline silicon.
- it may be formed of a material having Ge (germanium), SiGe (silicon germanium), GaAs (gallium arsenide), GaAlAs (gallium aluminum arsenide), or the like.
- a configuration using silicon in which the effective mass is controlled by applying stress to the crystal lattice and changing the lattice spacing may be used.
- the transistor 550 may be a HEMT (High Electron Mobility Transistor) by using GaAs, GaAlAs, or the like.
- an element that imparts n-type conductivity such as arsenic and phosphorus, or a p-type conductivity such as boron is imparted.
- the conductor 316 that functions as a gate electrode is a semiconductor material such as silicon, a metal material, or an alloy that contains an element that imparts n-type conductivity such as arsenic or phosphorus, or an element that imparts p-type conductivity such as boron.
- a material or a conductive material such as a metal oxide material can be used.
- the threshold voltage of the transistor can be adjusted by selecting the material of the conductor. Specifically, it is preferable to use a material such as titanium nitride or tantalum nitride for the conductor. Further, in order to achieve both conductivity and embedding property, it is preferable to use a metal material such as tungsten or aluminum as a laminate for the conductor, and it is particularly preferable to use tungsten in terms of heat resistance.
- the transistor 550 may be formed by using an SOI (Silicon on Insulator) substrate or the like.
- the SOI substrate is formed by injecting oxygen ions into a mirror-polished wafer and then heating it at a high temperature to form an oxide layer at a certain depth from the surface and to eliminate defects generated in the surface layer.
- SIMOX Separatation by Implanted Oxygen
- a transistor formed by using a single crystal substrate has a single crystal semiconductor in a channel forming region.
- FIG. 16 is a diagram illustrating a transistor 550A as a third transistor included in the layer L3A and a transistor 500 as a third transistor included in the layer L3B. Note that FIG. 16 shows an example in which the transistor 550A is electrically connected to the transistor 500. However, the transistor 500 included in the transmission / reception control device 12, the storage device 18, or the display device 19 does not necessarily have to be connected to the transistor 550.
- the transistor 500, the transistor 550, the transistor 650, and the transistor 500A or the transistor 550 shown in FIG. 16 are examples, and the transistor is not limited to the configuration, and an appropriate transistor may be used according to the circuit configuration and the driving method. Just do it.
- the semiconductor device is a unipolar circuit containing only OS transistors (meaning a circuit composed of only transistors having the same polarity such as only n-channel transistors)
- the configuration of the transistor 550A is as shown in FIG.
- the configuration may be the same as that of the transistor 500.
- the details of the transistor 500 will be described later.
- the transistor 650 will be described.
- the transistor 650 is formed on the same substrate as the transistor 550.
- the transistor 650 is formed by using a semiconductor layer formed on a single crystal silicon substrate, a sapphire substrate, or an SOI substrate.
- the semiconductor layer preferably has a crystal structure containing gallium. Examples of the semiconductor layer containing gallium include gallium nitride (hereinafter referred to as GaN) or gallium oxide (GaOx).
- GaN can be formed by providing a low temperature buffer layer 652 on the substrate 311 and epitaxially growing a single crystal GaN on the low temperature buffer layer 652.
- the single crystal GaN formed by epitaxial growth corresponds to the semiconductor layer 654.
- FIG. 15 shows an example in which a single crystal silicon substrate is used for the substrate 311.
- the semiconductor layer 656 is epitaxially grown on the semiconductor layer 654.
- the semiconductor layer 654 is preferably GaN, and the semiconductor layer 656 is preferably AlGaN.
- AlN aluminum nitride
- AlN and AlGaN which is a mixed crystal of AlN and GaN, are preferable as a high-power, high-frequency device material.
- a HEMT (High Electron Mobility Transistor) having AlGaN as a channel forming region can perform even higher withstand voltage operation than a HEMT having GaN as a channel forming region.
- Two-dimensional electron gas (2DEG) is generated at the interface between GaN and AlGaN due to the polarization effect of GaN and AlGaN. That is, in a transistor having a HEMT structure, 2DEG becomes a channel forming region.
- a conductor 330 is provided on the semiconductor layer 656.
- the conductor 330 corresponds to the source or drain of the transistor 650.
- the insulator 324 is provided so as to be sandwiched between the conductor 658 and the semiconductor layer 656.
- the conductor 658 may be paraphrased as a gate electrode, and the insulator 324 may be paraphrased as a gate insulator of the transistor 650.
- the insulator 324 silicon oxide, aluminum oxide, hafnium oxide or the like can be used.
- the insulator 324 contains any one of silicon oxide, aluminum oxide, hafnium oxide, and the like to reduce the off-current of the transistor 650.
- the gate insulator will be described in detail.
- the gate insulator is preferably a SiO 2 film, an Al 2 O 3 film, or an HfO 2 film.
- the transistor 650 preferably has a recess gate structure.
- FIG. 15 shows an example in which the transistor 650 has a recess gate structure. Since the transistor 650 has a recess gate structure, the off-current of the transistor 650 is reduced.
- the recess gate structure is formed by etching the semiconductor layer 656 at a position overlapping the gate electrode forming the channel forming region and thinning the semiconductor layer 656.
- the region of the semiconductor layer 656 that is thinned by etching is called a recess region.
- the recess region becomes a high threshold voltage due to the depletion enhancement of 2DEG.
- a large current can flow in the non-recess region due to the increase in the concentration of 2DEG.
- the insulator 320, the insulator 322, the insulator 324, and the insulator 326 are laminated in this order so as to cover the transistor 550.
- the insulator 320, the insulator 322, the insulator 324, and the insulator 326 for example, silicon oxide, silicon oxide nitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxide nitride, aluminum nitride, aluminum nitride and the like can be used. Just do it.
- silicon oxide refers to a material having a higher oxygen content than nitrogen as its composition
- silicon nitride as its composition means a material having a higher nitrogen content than oxygen as its composition. Is shown.
- aluminum nitride refers to a material whose composition has a higher oxygen content than nitrogen
- aluminum nitride refers to a material whose composition has a higher nitrogen content than oxygen. Is shown.
- the insulator 322 may have a function as a flattening film for flattening a step generated by a transistor 550 or the like provided below the insulator 322.
- the upper surface of the insulator 322 may be flattened by a flattening treatment using a chemical mechanical polishing (CMP) method or the like in order to improve the flatness.
- CMP chemical mechanical polishing
- the insulator 324 it is preferable to use a film having a barrier property so that hydrogen and impurities do not diffuse in the region where the transistor 500 is provided from the substrate 311 or the transistor 550.
- a film having a barrier property against hydrogen for example, silicon nitride formed by the CVD method can be used.
- hydrogen may diffuse into a semiconductor element having an oxide semiconductor such as a transistor 500, so that the characteristics of the semiconductor element may deteriorate. Therefore, it is preferable to use a film that suppresses the diffusion of hydrogen between the transistor 500 and the transistor 550.
- the membrane that suppresses the diffusion of hydrogen is a membrane that desorbs a small amount of hydrogen.
- the amount of hydrogen desorbed can be analyzed using, for example, a heated desorption gas analysis method (TDS).
- TDS heated desorption gas analysis method
- the amount of hydrogen desorbed from the insulator 324 is such that the amount desorbed in terms of hydrogen atoms is converted per area of the insulator 324 when the surface temperature of the film is in the range of 50 ° C. to 500 ° C. It may be 10 ⁇ 10 15 atoms / cm 2 or less, preferably 5 ⁇ 10 15 atoms / cm 2 or less.
- the insulator 326 preferably has a lower dielectric constant than the insulator 324.
- the relative permittivity of the insulator 326 is preferably less than 4, more preferably less than 3.
- the relative permittivity of the insulator 326 is preferably 0.7 times or less, more preferably 0.6 times or less, the relative permittivity of the insulator 324.
- the insulator 320, the insulator 322, the insulator 324, and the insulator 326 are embedded with a capacity of 600, a conductor 328 connected to the transistor 500, a conductor 330, and the like.
- the conductor 330 has a function as a source or drain electrode of the transistor 650.
- the conductor 328 and the conductor 330 have a function as a plug or a wiring.
- the conductor having a function as a plug or a wiring may collectively give a plurality of configurations and give the same reference numeral.
- the wiring and the plug connected to the wiring may be integrated. That is, a part of the conductor may function as a wiring, and a part of the conductor may function as a plug.
- each plug and wiring As the material of each plug and wiring (conductor 328, conductor 330, etc.), a conductive material such as a metal material, an alloy material, a metal nitride material, or a metal oxide material is used as a single layer or laminated. be able to. It is preferable to use a refractory material such as tungsten or molybdenum that has both heat resistance and conductivity, and it is preferable to use tungsten. Alternatively, it is preferably formed of a low resistance conductive material such as aluminum or copper. Wiring resistance can be reduced by using a low resistance conductive material.
- a wiring layer may be provided on the insulator 326 and the conductor 330.
- the insulator 350, the insulator 352, and the insulator 354 are laminated in this order.
- a conductor 356 is formed on the insulator 350, the insulator 352, and the insulator 354.
- the conductor 356 has a function as a plug for connecting to the transistor 550, a plug for connecting to the transistor 650, or a wiring.
- the conductor 356 can be provided by using the same materials as the conductor 328 and the conductor 330.
- the insulator 350 it is preferable to use an insulator having a barrier property against hydrogen, similarly to the insulator 324.
- the conductor 356 preferably contains a conductor having a barrier property against hydrogen.
- a conductor having a barrier property against hydrogen is formed in the opening of the insulator 350 having a barrier property against hydrogen.
- the conductor having a barrier property against hydrogen for example, tantalum nitride or the like may be used. Further, by laminating tantalum nitride and tungsten having high conductivity, it is possible to suppress the diffusion of hydrogen from the transistor 550 while maintaining the conductivity as wiring. In this case, it is preferable that the tantalum nitride layer having a barrier property against hydrogen is in contact with the insulator 350 having a barrier property against hydrogen.
- a wiring layer may be provided on the insulator 354 and the conductor 356.
- the insulator 360, the insulator 362, and the insulator 364 are laminated in this order.
- a conductor 366 is formed on the insulator 360, the insulator 362, and the insulator 364.
- the conductor 366 has a function as a plug or wiring.
- the conductor 366 can be provided by using the same materials as the conductor 328 and the conductor 330.
- the insulator 360 it is preferable to use an insulator having a barrier property against hydrogen, similarly to the insulator 324.
- the conductor 366 preferably contains a conductor having a barrier property against hydrogen.
- a conductor having a barrier property against hydrogen is formed in the opening of the insulator 360 having a barrier property against hydrogen.
- a wiring layer may be provided on the insulator 364 and the conductor 366.
- the insulator 370, the insulator 372, and the insulator 374 are laminated in this order.
- a conductor 376 is formed on the insulator 370, the insulator 372, and the insulator 374.
- the conductor 376 has a function as a plug or wiring.
- the conductor 376 can be provided by using the same material as the conductor 328 and the conductor 330.
- the insulator 370 it is preferable to use an insulator having a barrier property against hydrogen, similarly to the insulator 324.
- the conductor 376 preferably contains a conductor having a barrier property against hydrogen.
- a conductor having a barrier property against hydrogen is formed in the opening of the insulator 370 having a barrier property against hydrogen.
- a wiring layer may be provided on the insulator 374 and the conductor 376.
- the insulator 380, the insulator 382, and the insulator 384 are laminated in this order.
- a conductor 386 is formed on the insulator 380, the insulator 382, and the insulator 384.
- the conductor 386 has a function as a plug or wiring.
- the conductor 386 can be provided by using the same materials as the conductor 328 and the conductor 330.
- the insulator 380 it is preferable to use an insulator having a barrier property against hydrogen, similarly to the insulator 324.
- the conductor 386 preferably contains a conductor having a barrier property against hydrogen.
- a conductor having a barrier property against hydrogen is formed in the opening of the insulator 380 having a barrier property against hydrogen.
- FIG. 20 shows an example in which the transistor 550 is connected to the transistor 650 via the conductor 366.
- the wiring in which the transistor 550 is connected to the transistor 650 is not limited to the conductor 366.
- the wiring layer including the conductor 356, the wiring layer including the conductor 366, the wiring layer including the conductor 376, and the wiring layer including the conductor 386 have been described, but the semiconductor device according to the present embodiment has been described. It is not limited to this.
- the number of wiring layers similar to the wiring layer containing the conductor 356 may be three or less, or the number of wiring layers similar to the wiring layer including the conductor 356 may be five or more.
- Insulator 510, insulator 512, insulator 514, and insulator 516 are laminated in this order on the insulator 384.
- any of the insulator 510, the insulator 512, the insulator 514, and the insulator 516 it is preferable to use a substance having a barrier property against oxygen and hydrogen.
- the insulator 510 and the insulator 514 have a barrier property that prevents hydrogen and impurities from diffusing from, for example, the area where the substrate 311 and the transistor 550 are provided, or the area where the transistor 650 is provided to the area where the transistor 500 is provided. It is preferable to use a film having. Therefore, the same material as the insulator 324 can be used for the insulator 510 and the insulator 514.
- Silicon nitride formed by the CVD method can be used as an example of a film having a barrier property against hydrogen.
- hydrogen may diffuse into a semiconductor element having an oxide semiconductor such as a transistor 500, so that the characteristics of the semiconductor element may deteriorate. Therefore, it is preferable to use a film that suppresses the diffusion of hydrogen between the transistor 500 and the transistor 550 or the transistor 650.
- the membrane that suppresses the diffusion of hydrogen is a membrane that desorbs a small amount of hydrogen.
- metal oxides such as aluminum oxide, hafnium oxide, and tantalum oxide for the insulator 510 and the insulator 514.
- aluminum oxide has a high blocking effect that does not allow the membrane to permeate both oxygen and impurities such as hydrogen and water, which are factors that change the electrical characteristics of transistors. Therefore, aluminum oxide can prevent impurities such as hydrogen and moisture from being mixed into the transistor 500 during and after the manufacturing process of the transistor. In addition, it is possible to suppress the release of oxygen from the oxides constituting the transistor 500. Therefore, it is suitable for use as a protective film for the transistor 500.
- the same material as the insulator 320 can be used for the insulator 512 and the insulator 516. Further, by applying a material having a relatively low dielectric constant to these insulators, it is possible to reduce the parasitic capacitance generated between the wirings.
- a silicon oxide film, a silicon nitride film, or the like can be used as the insulator 512 and the insulator 516.
- the insulator 510, the insulator 512, the insulator 514, and the insulator 516 are embedded with a conductor 518, a conductor (for example, a conductor 503) constituting the transistor 500, and the like.
- the conductor 518 has a capacity of 600, a transistor 550, or a function as a plug or wiring for connecting to the transistor 650.
- the conductor 518 can be provided by using the same material as the conductor 328 and the conductor 330.
- the insulator 510 and the conductor 518 in the region in contact with the insulator 514 are preferably conductors having a barrier property against oxygen, hydrogen, and water.
- the transistor 550 or the transistor 650 can be separated from the transistor 500 by a layer having a barrier property against oxygen, hydrogen, and water, and the diffusion of hydrogen from the transistor 550 or the transistor 650 to the transistor 500 is suppressed. can do.
- a transistor 500 is provided above the insulator 516.
- the transistor 500 includes a conductor 503 arranged so as to be embedded in the insulator 514 and the insulator 516, and an insulator 520 arranged on the insulator 516 and the insulator 503.
- the insulator 524 placed on the insulator 522, the oxide 530a placed on the insulator 524, and the oxide 530a.
- the arranged oxide 530b, the conductors 542a and 542b arranged apart from each other on the oxide 530b, and the conductors 542a and 542b are arranged between the conductors 542a and 542b.
- It has an insulator 580 on which an opening is formed by superimposing, an insulator 545 arranged on the bottom surface and side surfaces of the opening, and a conductor 560 arranged on the forming surface of the insulator 545.
- the insulator 544 is arranged between the oxide 530a, the oxide 530b, the conductor 542a, and the conductor 542b, and the insulator 580.
- the conductor 560 includes a conductor 560a provided inside the insulator 545 and a conductor 560b provided so as to be embedded inside the conductor 560a. It is preferable to have.
- the insulator 574 is arranged on the insulator 580, the conductor 560, and the insulator 545.
- the oxide 530a and the oxide 530b may be collectively referred to as the oxide 530.
- the conductor 542a and the conductor 542b may be collectively referred to as a conductor 542.
- the transistor 500 shows a configuration in which two layers of oxide 530a and oxide 530b are laminated in a region where a channel is formed and in the vicinity thereof, but one aspect of the present invention is limited to this. is not it.
- a single layer of the oxide 530b or a laminated structure of three or more layers may be provided.
- the conductor 560 is shown as a two-layer laminated structure, but one aspect of the present invention is not limited to this.
- the conductor 560 may have a single-layer structure or a laminated structure of three or more layers.
- the transistor 500 shown in FIGS. 15, 16, 17A, and 20 is an example, and the transistor 500 is not limited to the configuration, and an appropriate transistor may be used depending on the circuit configuration, driving method, and the like.
- the conductor 560 functions as a gate electrode of the transistor, and the conductor 542a and the conductor 542b function as a source electrode or a drain electrode, respectively.
- the conductor 560 is formed so as to be embedded in the opening of the insulator 580 and the region sandwiched between the conductor 542a and the conductor 542b.
- the arrangement of the conductor 560, the conductor 542a and the conductor 542b is self-aligned with respect to the opening of the insulator 580. That is, in the transistor 500, the gate electrode can be arranged in a self-aligned manner between the source electrode and the drain electrode. Therefore, since the conductor 560 can be formed without providing the alignment margin, the occupied area of the transistor 500 can be reduced. As a result, the semiconductor device can be miniaturized and highly integrated.
- the conductor 560 is formed in a region between the conductor 542a and the conductor 542b in a self-aligned manner, the conductor 560 does not have a region that overlaps with the conductor 542a or the conductor 542b. Thereby, the parasitic capacitance formed between the conductor 560 and the conductors 542a and 542b can be reduced. Therefore, the switching speed of the transistor 500 can be improved and a high frequency characteristic can be provided.
- the conductor 560 may function as a first gate (also referred to as a top gate) electrode. Further, the conductor 503 may function as a second gate (also referred to as a bottom gate) electrode.
- the threshold voltage of the transistor 500 can be controlled by changing the voltage applied to the conductor 503 independently of the voltage applied to the conductor 560 without interlocking with the voltage applied to the conductor 560. In particular, by applying a negative voltage to the conductor 503, the threshold voltage of the transistor 500 can be made larger than 0 V, and the off-current can be reduced. Therefore, when a negative voltage is applied to the conductor 503, the drain current when the voltage applied to the conductor 560 is 0 V can be made smaller than when the negative voltage is not applied.
- the conductor 503 is arranged so as to overlap the oxide 530 and the conductor 560. As a result, when a voltage is applied to the conductor 560 and the conductor 503, the electric field generated from the conductor 560 and the electric field generated from the conductor 503 are connected to cover the channel forming region formed in the oxide 530. Can be done.
- the configuration of the transistor that electrically surrounds the channel formation region by the electric field of the pair of gate electrodes is referred to as a surroundd channel (S-channel) configuration.
- S-channel surroundd channel
- the side surface and the periphery of the oxide 530 in contact with the conductor 542a and the conductor 542b functioning as the source electrode and the drain electrode are said to be type I as in the channel formation region. It has characteristics.
- the side surface and the periphery of the oxide 530 in contact with the conductor 542a and the conductor 542b are in contact with the insulator 544, it can be type I as in the channel forming region.
- type I can be treated as the same as high-purity authenticity described later.
- the S-channel configuration disclosed in the present specification and the like is different from the Fin type configuration and the planar type configuration. By adopting the S-channel configuration, it is possible to increase the resistance to the short-channel effect, in other words, to make a transistor in which the short-channel effect is unlikely to occur.
- the conductor 503 has the same structure as the conductor 518, and the conductor 503a is formed in contact with the inner wall of the opening of the insulator 514 and the insulator 516, and the conductor 503b is further formed inside.
- the transistor 500 shows a configuration in which the conductor 503a and the conductor 503b are laminated, one aspect of the present invention is not limited to this.
- the conductor 503 may be provided as a single layer or a laminated structure having three or more layers.
- a conductive material for the conductor 503a which has a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms (the above impurities are difficult to permeate).
- a conductive material having a function of suppressing the diffusion of oxygen for example, at least one oxygen atom, oxygen molecule, etc.
- the function of suppressing the diffusion of impurities or oxygen is a function of suppressing the diffusion of any one or all of the above impurities or the above oxygen.
- the conductor 503a since the conductor 503a has a function of suppressing the diffusion of oxygen, it is possible to prevent the conductor 503b from being oxidized and the conductivity from being lowered.
- the conductor 503 When the conductor 503 also functions as a wiring, it is preferable to use a highly conductive conductive material containing tungsten, copper, or aluminum as a main component for the conductor 503b.
- the conductor 503 is shown by laminating the conductor 503a and the conductor 503b, but the conductor 503 may have a single-layer structure.
- the insulator 520, the insulator 522, and the insulator 524 have a function as a second gate insulating film.
- the insulator 524 in contact with the oxide 530 it is preferable to use an insulator containing more oxygen than oxygen satisfying the stoichiometric composition.
- the oxygen is easily released from the membrane by heating.
- oxygen released by heating may be referred to as "excess oxygen”. That is, it is preferable that the insulator 524 is formed with a region containing excess oxygen (also referred to as “excess oxygen region”).
- the defective Functions as a donor, sometimes electrons serving as carriers are generated.
- a part of hydrogen may be combined with oxygen that is bonded to a metal atom to generate an electron as a carrier. Therefore, a transistor using an oxide semiconductor containing a large amount of hydrogen tends to have a normally-on characteristic. Further, since hydrogen in the oxide semiconductor easily moves due to stress such as heat and electric field, if the oxide semiconductor contains a large amount of hydrogen, the reliability of the transistor may deteriorate.
- the V O H to obtain a sufficiently reduced oxide semiconductor (referred to as “dewatering” or “dehydrogenation process” also.) Water in the oxide semiconductor, to remove impurities such as hydrogen It is important to supply oxygen to the oxide semiconductor to compensate for the oxygen deficiency (also referred to as “dehydrogenation treatment”).
- the V O H oxide semiconductor impurity is sufficiently reduced such by using a channel formation region of the transistor, it is possible to have stable electrical characteristics.
- an oxide material in which a part of oxygen is desorbed by heating is an oxide having an oxygen desorption amount of 1.0 ⁇ 10 18 atoms / cm 3 or more, preferably 1
- the surface temperature of the film during the TDS analysis is preferably in the range of 100 ° C. or higher and 700 ° C. or lower, or 100 ° C. or higher and 400 ° C. or lower.
- the insulator having the excess oxygen region and the oxide 530 may be brought into contact with each other to perform one or more of heat treatment, microwave treatment, or RF treatment.
- heat treatment microwave treatment, or RF treatment.
- water or hydrogen in the oxide 530 can be removed.
- reactions occur which bonds VoH is disconnected, when other words happening reaction of "V O H ⁇ Vo + H", it can be dehydrogenated.
- the hydrogen generated as oxygen combines with H 2 O, it may be removed from the oxide 530 or oxide 530 near the insulator.
- a part of hydrogen may be gettered on the conductor 542.
- the microwave processing for example, it is preferable to use an apparatus having a power source for generating high-density plasma or an apparatus having a power source for applying RF to the substrate side.
- an apparatus having a power source for generating high-density plasma for example, by using a gas containing oxygen and using a high-density plasma, high-density oxygen radicals can be generated, and by applying RF to the substrate side, the oxygen radicals generated by the high-density plasma can be generated.
- the pressure may be 133 Pa or more, preferably 200 Pa or more, and more preferably 400 Pa or more.
- oxygen and argon are used as the gas to be introduced into the apparatus for performing microwave treatment, and the oxygen flow rate ratio (O 2 / (O 2 + Ar)) is 50% or less, preferably 10% or more and 30. It is better to do it at% or less.
- the heat treatment may be performed, for example, at 100 ° C. or higher and 450 ° C. or lower, more preferably 350 ° C. or higher and 400 ° C. or lower.
- the heat treatment is carried out in an atmosphere of nitrogen gas or an inert gas, or an atmosphere containing 10 ppm or more, 1% or more, or 10% or more of an oxidizing gas.
- the heat treatment is preferably performed in an oxygen atmosphere.
- oxygen can be supplied to the oxide 530 to reduce oxygen deficiency (VO ).
- the heat treatment may be performed in a reduced pressure state.
- the heat treatment may be carried out in an atmosphere containing 10 ppm or more, 1% or more, or 10% or more of an oxidizing gas in order to supplement the desorbed oxygen after the heat treatment in an atmosphere of nitrogen gas or an inert gas.
- the heat treatment may be performed in an atmosphere containing 10 ppm or more, 1% or more, or 10% or more of the oxidizing gas, and then the heat treatment may be continuously performed in an atmosphere of nitrogen gas or an inert gas.
- the oxygen deficiency in the oxide 530 can be repaired by the supplied oxygen, in other words, the reaction "Vo + O ⁇ null" can be promoted. Further, since the oxygen supplied to the hydrogen remaining in the oxide 530 is reacted to remove the hydrogen as H 2 O (to dehydration) can. Thus, the hydrogen remained in the oxide 530 can be prevented from recombine V O H is formed by oxygen vacancies.
- the insulator 524 has an excess oxygen region, it is preferable that the insulator 522 has a function of suppressing the diffusion of oxygen (for example, oxygen atom, oxygen molecule, etc.) (the oxygen is difficult to permeate).
- oxygen for example, oxygen atom, oxygen molecule, etc.
- the insulator 522 has a function of suppressing the diffusion of oxygen and impurities, the oxygen contained in the oxide 530 does not diffuse to the insulator 520 side, which is preferable. Further, it is possible to suppress the conductor 503 from reacting with the oxygen contained in the insulator 524 and the oxide 530.
- the insulator 522 may be, for example, aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate), tantalum oxide, zirconate oxide, lead zirconate titanate (PZT), strontium titanate (SrTIO 3 ), or It is preferable to use an insulator containing a so-called high-k material such as (Ba, Sr) TiO 3 (BST) in a single layer or in a laminated manner. As transistors become finer and more integrated, problems such as leakage current may occur due to the thinning of the gate insulating film. By using a high-k material for the insulator that functions as a gate insulating film, it is possible to reduce the gate voltage during transistor operation while maintaining the physical film thickness.
- a so-called high-k material such as (Ba, Sr) TiO 3 (BST)
- an insulator containing oxides of one or both of aluminum and hafnium which are insulating materials having a function of suppressing diffusion of impurities and oxygen (the above oxygen is difficult to permeate).
- the insulator containing one or both oxides of aluminum and hafnium it is preferable to use aluminum oxide, hafnium oxide, an oxide containing aluminum and hafnium (hafnium aluminate) and the like.
- the insulator 522 is formed using such a material, the insulator 522 suppresses the release of oxygen from the oxide 530 and the mixing of impurities such as hydrogen from the peripheral portion of the transistor 500 into the oxide 530. Functions as a layer.
- aluminum oxide, bismuth oxide, germanium oxide, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, and zirconium oxide may be added to these insulators.
- these insulators may be nitrided. Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated on the above insulator.
- the insulator 520 is thermally stable.
- silicon oxide and silicon oxynitride are suitable because they are thermally stable.
- the insulator 520, the insulator 522, and the insulator 524 are shown as the second gate insulating film having a three-layer laminated structure, but the second gate.
- the insulating film may have a single layer, two layers, or a laminated structure of four or more layers. In that case, the laminated structure is not limited to the same material, and may be a laminated structure made of different materials.
- the transistor 500 uses a metal oxide that functions as an oxide semiconductor for the oxide 530 including the channel forming region.
- the oxide semiconductor preferably contains at least one of In and Zn.
- In-M-Zn oxide element M is aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, titanium, iron, nickel, germanium, zirconium, molybdenum, lantern, cerium, neodymium).
- Hafnium, tantalum, tungsten, gallium, etc. (one or more) and the like may be used.
- the metal oxide that functions as an oxide semiconductor may be formed by a sputtering method or an ALD (Atomic Layer Deposition) method.
- ALD Atomic Layer Deposition
- the metal oxide that functions as a channel forming region in the oxide 530 it is preferable to use a metal oxide having a band gap of 2 eV or more, preferably 2.5 eV or more. As described above, by using a metal oxide having a large bandgap, the off-current of the transistor can be reduced.
- the oxide 530 can suppress the diffusion of impurities into the oxide 530b from the composition formed below the oxide 530a.
- the oxide 530 has a configuration of a plurality of oxide layers in which the atomic number ratio of each metal atom is different.
- the atomic number ratio of the element M in the constituent elements is larger than the atomic number ratio of the element M in the constituent elements in the metal oxide used in the oxide 530b.
- the atomic number ratio of the element M to In is preferably larger than the atomic number ratio of the element M to In in the metal oxide used for the oxide 530b.
- the atomic number ratio of In to the element M is preferably larger than the atomic number ratio of In to the element M in the metal oxide used for the oxide 530a.
- the energy at the lower end of the conduction band of the oxide 530a is higher than the energy at the lower end of the conduction band of the oxide 530b.
- the electron affinity of the oxide 530a is smaller than the electron affinity of the oxide 530b.
- the energy level at the lower end of the conduction band changes gently.
- the energy level at the lower end of the conduction band at the junction of the oxide 530a and the oxide 530b is continuously changed or continuously bonded. In order to do so, it is preferable to reduce the defect level density of the mixed layer formed at the interface between the oxide 530a and the oxide 530b.
- the oxide 530a and the oxide 530b have a common element (main component) other than oxygen, a mixed layer having a low defect level density can be formed.
- the oxide 530b is an In-Ga-Zn oxide
- the main path of the carrier is oxide 530b.
- the defect level density at the interface between the oxide 530a and the oxide 530b can be lowered. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and the transistor 500 can obtain a high on-current.
- a conductor 542a and a conductor 542b that function as a source electrode and a drain electrode are provided on the oxide 530b.
- the conductors 542a and 542b include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium, zirconium, beryllium, indium, and ruthenium.
- Iridium, strontium, lanthanum, or an alloy containing the above-mentioned metal element as a component, or an alloy in which the above-mentioned metal element is combined is preferably used.
- tantalum nitride, titanium nitride, tungsten, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, oxides containing lanthanum and nickel, etc. are used. Is preferable.
- tantalum nitride, titanium nitride, nitrides containing titanium and aluminum, nitrides containing tantalum and aluminum, ruthenium oxide, ruthenium nitride, oxides containing strontium and ruthenium, and oxides containing lanthanum and nickel are difficult to oxidize.
- a metal nitride film such as tantalum nitride is preferable because it has a barrier property against hydrogen or oxygen.
- the conductor 542a and the conductor 542b are shown as a single-layer structure, but a laminated structure of two or more layers may be used.
- a tantalum nitride film and a tungsten film may be laminated.
- the titanium film and the aluminum film may be laminated.
- a two-layer structure in which an aluminum film is laminated on a tungsten film a two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film, a two-layer structure in which a copper film is laminated on a titanium film, and a two-layer structure in which a copper film is laminated on a titanium film. It may have a two-layer structure in which copper films are laminated.
- a transparent conductive material containing indium oxide, tin oxide or zinc oxide may be used.
- a region 543a and a region 543b may be formed as low resistance regions at the interface of the oxide 530 with the conductor 542a (conductor 542b) and its vicinity.
- the region 543a functions as one of the source region or the drain region
- the region 543b functions as the other of the source region or the drain region.
- a channel forming region is formed in a region sandwiched between the region 543a and the region 543b.
- the oxygen concentration in the region 543a (region 543b) may be reduced. Further, in the region 543a (region 543b), a metal compound layer containing the metal contained in the conductor 542a (conductor 542b) and the component of the oxide 530 may be formed. In such a case, the carrier density of the region 543a (region 543b) increases, and the region 543a (region 543b) becomes a low resistance region.
- the insulator 544 is provided so as to cover the conductor 542a and the conductor 542b, and suppresses the oxidation of the conductor 542a and the conductor 542b. At this time, the insulator 544 may be provided so as to cover the side surface of the oxide 530 and come into contact with the insulator 524.
- insulator 544 a metal oxide containing one or more selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, neodymium, lantern, magnesium, etc. Can be used. Further, as the insulator 544, silicon nitride oxide, silicon nitride or the like can also be used.
- the insulator 544 it is preferable to use aluminum or an oxide containing one or both oxides of hafnium, such as aluminum oxide, hafnium oxide, aluminum, and an oxide containing hafnium (hafnium aluminate). ..
- hafnium aluminate has higher heat resistance than the hafnium oxide film. Therefore, it is preferable because it is difficult to crystallize in the heat treatment in the subsequent step.
- the conductors 542a and 542b are materials having oxidation resistance or materials whose conductivity does not significantly decrease even if oxygen is absorbed, the insulator 544 is not an essential configuration. It may be appropriately designed according to the desired transistor characteristics.
- the insulator 544 By having the insulator 544, it is possible to prevent impurities such as water and hydrogen contained in the insulator 580 from diffusing into the oxide 530b. Further, it is possible to suppress the oxidation of the conductor 542 due to the excess oxygen contained in the insulator 580.
- the insulator 545 functions as a first gate insulating film.
- the insulator 545 is preferably formed by using an insulator that contains excess oxygen and releases oxygen by heating, similarly to the above-mentioned insulator 524.
- silicon oxide with excess oxygen silicon oxide, silicon nitride, silicon nitride, silicon oxide with fluorine added, silicon oxide with carbon added, carbon, and silicon oxide with nitrogen added, vacancies Silicon oxide having can be used.
- silicon oxide and silicon nitride nitride are preferable because they are stable against heat.
- the film thickness of the insulator 545 is preferably 1 nm or more and 20 nm or less.
- a metal oxide may be provided between the insulator 545 and the conductor 560.
- the metal oxide preferably suppresses oxygen diffusion from the insulator 545 to the conductor 560.
- the diffusion of excess oxygen from the insulator 545 to the conductor 560 is suppressed. That is, it is possible to suppress a decrease in the amount of excess oxygen supplied to the oxide 530.
- oxidation of the conductor 560 due to excess oxygen can be suppressed.
- a material that can be used for the insulator 544 may be used.
- the insulator 545 may have a laminated structure as in the case of the second gate insulating film.
- an insulator that functions as a gate insulating film is made of a high-k material and heat.
- the conductor 560 functioning as the first gate electrode is shown as a two-layer structure in FIGS. 17A and 17B, it may have a single-layer structure or a laminated structure of three or more layers.
- Conductor 560a is a hydrogen atom, a hydrogen molecule, a water molecule, a nitrogen atom, a nitrogen molecule, nitric oxide molecule (N 2 O, NO, etc. NO 2), conductive having a function of suppressing the diffusion of impurities such as copper atoms It is preferable to use a material. Alternatively, it is preferable to use a conductive material having a function of suppressing the diffusion of oxygen (for example, at least one oxygen atom, oxygen molecule, etc.). Since the conductor 560a has a function of suppressing the diffusion of oxygen, it is possible to prevent the conductor 560b from being oxidized by the oxygen contained in the insulator 545 to reduce the conductivity.
- the conductive material having a function of suppressing the diffusion of oxygen for example, tantalum, tantalum nitride, ruthenium, ruthenium oxide and the like are preferably used.
- an oxide semiconductor applicable to the oxide 530 can be used as the conductor 560a. In that case, by forming the conductor 560b into a film by a sputtering method, the electric resistance value of the conductor 560a can be lowered to form a conductor. This can be called an OC (Oxide Conductor) electrode.
- the conductor 560b it is preferable to use a conductive material containing tungsten, copper, or aluminum as a main component. Further, since the conductor 560b also functions as wiring, it is preferable to use a conductor having high conductivity. For example, a conductive material containing tungsten, copper, or aluminum as a main component can be used. Further, the conductor 560b may have a laminated structure, for example, a laminated structure of titanium or titanium nitride and the conductive material.
- the insulator 580 is provided on the conductor 542a and the conductor 542b via the insulator 544.
- the insulator 580 preferably has an excess oxygen region.
- silicon, resin, or the like silicon oxide and silicon oxide nitride are preferable because they are thermally stable.
- silicon oxide and silicon oxide having pores are preferable because an excess oxygen region can be easily formed in a later step.
- the insulator 580 preferably has an excess oxygen region. By providing the insulator 580 in which oxygen is released by heating, the oxygen in the insulator 580 can be efficiently supplied to the oxide 530. It is preferable that the concentration of impurities such as water and hydrogen in the insulator 580 is reduced.
- the opening of the insulator 580 is formed so as to overlap the region between the conductor 542a and the conductor 542b.
- the conductor 560 is formed so as to be embedded in the opening of the insulator 580 and the region sandwiched between the conductor 542a and the conductor 542b.
- the conductor 560 When miniaturizing a semiconductor device, it is required to shorten the gate length, but it is necessary to prevent the conductivity of the conductor 560 from decreasing. Therefore, if the film thickness of the conductor 560 is increased, the conductor 560 may have a shape having a high aspect ratio. In the present embodiment, since the conductor 560 is provided so as to be embedded in the opening of the insulator 580, even if the conductor 560 has a shape having a high aspect ratio, the conductor 560 is formed without collapsing during the process. Can be done.
- the insulator 574 is preferably provided in contact with the upper surface of the insulator 580, the upper surface of the conductor 560, and the upper surface of the insulator 545.
- an excess oxygen region can be provided in the insulator 545 and the insulator 580. Thereby, oxygen can be supplied into the oxide 530 from the excess oxygen region.
- the insulator 574 use one or more metal oxides selected from hafnium, aluminum, gallium, yttrium, zirconium, tungsten, titanium, tantalum, nickel, germanium, magnesium and the like. Can be done.
- aluminum oxide has a high barrier property and can suppress the diffusion of hydrogen and nitrogen even in a thin film of 0.5 nm or more and 3.0 nm or less. Therefore, the aluminum oxide film formed by the sputtering method can have a function as a barrier film for impurities such as hydrogen as well as an oxygen supply source.
- the insulator 581 that functions as an interlayer film on the insulator 574.
- the insulator 581 preferably has a reduced concentration of impurities such as water and hydrogen in the film.
- the conductor 540a and the conductor 540b are arranged in the openings formed in the insulator 581, the insulator 574, the insulator 580, and the insulator 544.
- the conductor 540a and the conductor 540b are provided so as to face each other with the conductor 560 interposed therebetween.
- the conductor 540a and the conductor 540b have the same configuration as the conductor 546 and the conductor 548 described later.
- An insulator 582 is provided on the insulator 581.
- the insulator 582 it is preferable to use a substance having a barrier property against oxygen and hydrogen. Therefore, the same material as the insulator 514 can be used for the insulator 582.
- a metal oxide such as aluminum oxide, hafnium oxide, and tantalum oxide for the insulator 582.
- aluminum oxide has a high blocking effect that does not allow the membrane to permeate both oxygen and impurities such as hydrogen and water, which are factors that change the electrical characteristics of transistors. Therefore, aluminum oxide can prevent impurities such as hydrogen and moisture from being mixed into the transistor 500 during and after the manufacturing process of the transistor. In addition, it is possible to suppress the release of oxygen from the oxides constituting the transistor 500. Therefore, it is suitable for use as a protective film for the transistor 500.
- an insulator 586 is provided on the insulator 582.
- the same material as the insulator 320 can be used. Further, by applying a material having a relatively low dielectric constant to these insulators, it is possible to reduce the parasitic capacitance generated between the wirings.
- a silicon oxide film, a silicon nitride film, or the like can be used as the insulator 586.
- the insulator 520, the insulator 522, the insulator 524, the insulator 544, the insulator 580, the insulator 574, the insulator 581, the insulator 582, and the insulator 586 include the conductor 546 and the conductor 548, etc. Is embedded.
- the conductor 546 and the conductor 548 have a capacity of 600, a transistor 500, or a function as a plug or wiring for connecting to the transistor 550.
- the conductor 546 and the conductor 548 can be provided by using the same materials as the conductor 328 and the conductor 330.
- an opening may be formed so as to surround the transistor 500, and an insulator having a high barrier property against hydrogen or water may be formed so as to cover the opening.
- an insulator having a high barrier property against hydrogen or water By wrapping the transistor 500 with the above-mentioned insulator having a high barrier property, it is possible to prevent moisture and hydrogen from entering from the outside.
- a plurality of transistors 500 may be put together and wrapped with an insulator having a high barrier property against hydrogen or water.
- the insulator having a high barrier property to hydrogen or water for example, the same material as the insulator 522 or the insulator 514 may be used.
- the capacity 600 has a conductor 610, a conductor 620, and an insulator 630.
- the conductor 612 may be provided on the conductor 546 and the conductor 548.
- the conductor 612 has a function as a plug or wiring for connecting to the transistor 500.
- the conductor 610 has a function as an electrode having a capacity of 600.
- the conductor 612 and the conductor 610 can be formed in the same process.
- the conductor 612 and the conductor 610 include a metal film containing an element selected from molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium, or a metal nitride film containing the above-mentioned elements as components.
- a metal nitride film containing an element selected from molybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium, neodymium, and scandium or a metal nitride film containing the above-mentioned elements as components.
- titanium nitride film, molybdenum nitride film, tungsten nitride film and the like can be used.
- indium tin oxide, indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, and silicon oxide are added.
- the conductor 612 and the conductor 610 are shown in a single-layer configuration, but the configuration is not limited to this, and a laminated configuration of two or more layers may be used.
- a conductor having a barrier property and a conductor having a high adhesion to a conductor having a high conductivity may be formed between a conductor having a barrier property and a conductor having a high conductivity.
- the conductor 620 is provided so as to overlap with the conductor 610 via the insulator 630.
- a conductive material such as a metal material, an alloy material, or a metal oxide material can be used. It is preferable to use a refractory material such as tungsten or molybdenum that has both heat resistance and conductivity, and it is particularly preferable to use tungsten. Further, when forming in the same process as other configurations such as a conductor, Cu (copper), Al (aluminum) or the like, which are low resistance metal materials, may be used.
- An insulator 640 is provided on the conductor 620 and the insulator 630.
- the insulator 640 can be provided by using the same material as the insulator 320. Further, the insulator 640 may function as a flattening film that covers the uneven shape below the insulator 640.
- Examples of the substrate that can be used in the semiconductor device of one aspect of the present invention include a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, and a metal substrate (for example, a stainless steel substrate, a substrate having a stainless still foil, and a tungsten substrate). , Substrates having tungsten foil, etc.), semiconductor substrates (for example, single crystal semiconductor substrates, polycrystalline semiconductor substrates, compound semiconductor substrates, etc.) SOI (Silicon on Insulator) substrates, and the like can be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of the present embodiment may be used. Examples of glass substrates include barium borosilicate glass, aluminosilicate glass, aluminosilicate glass, and soda lime glass. In addition, crystallized glass or the like can be used.
- a flexible substrate a laminated film, paper containing a fibrous material, a base film, or the like
- the flexible substrate, the laminated film, the base film and the like are as follows.
- plastics typified by polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone (PES), and polytetrafluoroethylene (PTFE).
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- PES polyether sulfone
- PTFE polytetrafluoroethylene
- a synthetic resin such as acrylic.
- examples include polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride.
- polyamide, polyimide, aramid resin, epoxy resin, inorganic vapor-deposited film, papers and the like are polyamide, polyimide, aramid resin, epoxy resin, inorganic vapor-deposited film, papers and the like.
- a transistor using a semiconductor substrate, a single crystal substrate, an SOI substrate, or the like, it is possible to manufacture a transistor having a high current capacity and a small size with little variation in characteristics, size, or shape. ..
- the circuit is composed of such transistors, the power consumption of the circuit can be reduced or the circuit can be highly integrated.
- a flexible substrate may be used as the substrate, and a transistor, a resistor, and / or a capacitance may be formed directly on the flexible substrate.
- a release layer may be provided between the substrate and the transistor, resistor, and / or capacitance. The release layer can be used for separating the semiconductor device from the substrate and reprinting it on another substrate after the semiconductor device is partially or completely completed on the release layer. At that time, the transistor, the resistor, and / or the capacitance can be reprinted on a substrate having poor heat resistance or a flexible substrate.
- the above-mentioned release layer may include, for example, a structure in which an inorganic film of a tungsten film and a silicon oxide film is laminated, a structure in which an organic resin film such as polyimide is formed on a substrate, a silicon film containing hydrogen, or the like. Can be used.
- the semiconductor device may be formed on one substrate, and then the semiconductor device may be transposed on another substrate.
- a substrate on which a semiconductor device is transferred in addition to the substrate capable of forming the above-mentioned transistor, a paper substrate, a cellophane substrate, an aramid film substrate, a polyimide film substrate, a stone substrate, a wood substrate, and a cloth substrate (natural).
- fibers including silk, cotton, linen
- synthetic fibers nylon, polyurethane, polyester
- recycled fibers including acetate, cupra, rayon, recycled polyester
- leather substrates or rubber substrates.
- the transistor 500A shown in FIGS. 18A to 18C is a modification of the transistor 500 shown in FIGS. 17A and 17B.
- 18A is a top view of the transistor 500A
- FIG. 18B is a cross-sectional view of the transistor 500A in the channel length direction
- FIG. 18C is a cross-sectional view of the transistor 500A in the channel width direction.
- the configuration shown in FIGS. 18A to 18C can also be applied to other transistors included in the semiconductor device of one aspect of the present invention, such as the transistor 550.
- the transistor 500A shown in FIGS. 18A to 18C is different from the transistor 500 shown in FIGS. 17A and 17B in that it has an insulator 552, an insulator 513, and an insulator 404. Further, the insulator 552 is provided in contact with the side surface of the conductor 540a, and the insulator 552 is provided in contact with the side surface of the conductor 540b, which is different from the transistor 500. Further, it differs from the transistor 500 in that it does not have an insulator 520.
- an insulator 513 is provided on the insulator 512. Further, the insulator 404 is provided on the insulator 574 and the insulator 513.
- the insulator 514, the insulator 516, the insulator 522, the insulator 524, the insulator 544, the insulator 580, and the insulator 574 are patterned, and the insulator 404 is these. It is configured to cover. That is, the insulator 404 includes an upper surface of the insulator 574, a side surface of the insulator 574, a side surface of the insulator 580, a side surface of the insulator 544, a side surface of the insulator 524, a side surface of the insulator 522, a side surface of the insulator 516, and an insulator. It is in contact with the side surface of the body 514 and the upper surface of the insulator 513, respectively. As a result, the oxide 530 and the like are isolated from the outside by the insulator 404 and the insulator 513.
- the insulator 513 and the insulator 404 have a high function of suppressing the diffusion of hydrogen (for example, at least one hydrogen atom, hydrogen molecule, etc.) or water molecule.
- hydrogen for example, at least one hydrogen atom, hydrogen molecule, etc.
- the insulator 513 and the insulator 404 it is preferable to use silicon nitride or silicon nitride oxide, which is a material having a high hydrogen barrier property. As a result, it is possible to suppress the diffusion of hydrogen or the like into the oxide 530, so that the deterioration of the characteristics of the transistor 500A can be suppressed. Therefore, the reliability of the semiconductor device according to one aspect of the present invention can be improved.
- the insulator 552 is provided in contact with the insulator 581, the insulator 404, the insulator 574, the insulator 580, and the insulator 544.
- the insulator 552 preferably has a function of suppressing the diffusion of hydrogen or water molecules.
- an insulator such as silicon nitride, aluminum oxide, or silicon nitride oxide, which is a material having a high hydrogen barrier property.
- silicon nitride is a material having a high hydrogen barrier property, it is suitable to be used as an insulator 552.
- the insulator 552 By using a material having a high hydrogen barrier property as the insulator 552, it is possible to suppress the diffusion of impurities such as water or hydrogen from the insulator 580 or the like to the oxide 530 through the conductor 540a and the conductor 540b. Further, it is possible to suppress the oxygen contained in the insulator 580 from being absorbed by the conductor 540a and the conductor 540b. As described above, the reliability of the semiconductor device according to one aspect of the present invention can be enhanced.
- FIG. 19A is a top view of the transistor 500B.
- FIG. 19B is a cross-sectional view of the L1-L2 portion shown by the alternate long and short dash line in FIG. 19A.
- FIG. 19C is a cross-sectional view of the W1-W2 portion shown by the alternate long and short dash line in FIG. 19A.
- the description of some elements is omitted for the purpose of clarifying the figure.
- the transistor 500B is a modification of the transistor 500, and is a transistor that can be replaced with the transistor 500. Therefore, in order to prevent the description from being repeated, the points different from the transistor 500 will be mainly described.
- the conductor 560 that functions as the first gate electrode has a conductor 560a and a conductor 560b on the conductor 560a.
- the conductor 560a it is preferable to use a conductive material having a function of suppressing the diffusion of impurities such as hydrogen atoms, hydrogen molecules, water molecules, and copper atoms.
- a conductive material having a function of suppressing the diffusion of oxygen for example, at least one oxygen atom, oxygen molecule, etc.).
- the conductor 560a has a function of suppressing the diffusion of oxygen, the material selectivity of the conductor 560b can be improved. That is, by having the conductor 560a, it is possible to suppress the oxidation of the conductor 560b and prevent the conductivity from being lowered.
- the insulator 544 it is preferable to provide the insulator 544 so as to cover the upper surface and the side surface of the conductor 560 and the side surface of the insulator 545.
- the insulator 544 it is preferable to use an insulating material having a function of suppressing the diffusion of impurities such as water and hydrogen and oxygen.
- impurities such as water and hydrogen and oxygen.
- metal oxides such as magnesium oxide, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide or tantalum oxide, silicon nitride or silicon nitride can be used.
- the insulator 544 By providing the insulator 544, the oxidation of the conductor 560 can be suppressed. Further, by having the insulator 544, it is possible to suppress the diffusion of impurities such as water and hydrogen contained in the insulator 580 to the transistor 500B.
- the conductor 560 overlaps a part of the conductor 542a and a part of the conductor 542b in the transistor 500B, the parasitic capacitance tends to be larger than that of the transistor 500. Therefore, the operating frequency tends to be lower than that of the transistor 500. However, since it is not necessary to provide an opening in the insulator 580 or the like to embed the conductor 560 or the insulator 545, the productivity is higher than that of the transistor 500.
- the metal oxide preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc. In addition to them, it is preferable that aluminum, gallium, yttrium, tin and the like are contained. It may also contain one or more selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt and the like. ..
- FIG. 21A is a diagram illustrating classification of crystal structures of oxide semiconductors, typically IGZO (metal oxides containing In, Ga, and Zn).
- IGZO metal oxides containing In, Ga, and Zn
- oxide semiconductors are roughly classified into “Amorphous”, “Crystalline”, and “Crystal”.
- Amorphous includes complete amorphous.
- Crystalline includes CAAC (c-axis-aligned crystalline), nc (nanocrystalline), and CAC (cloud-aligned composite).
- single crystal, poly crystal, and single crystal amorphous are excluded from the classification of "Crystalline”.
- “Crystal” includes single crystal and poly crystal.
- the structure in the thick frame shown in FIG. 21A is an intermediate state between "Amorphous” and “Crystal", and belongs to a new boundary region (New crystal line phase). .. That is, the structure can be rephrased as a structure completely different from the energetically unstable "Amorphous” and "Crystal".
- the crystal structure of the film or substrate can be evaluated using an X-ray diffraction (XRD) spectrum.
- XRD X-ray diffraction
- the GIXD spectrum obtained by GIXD (Glazing-Incidence XRD) measurement of a CAAC-IGZO film classified as "Crystalline" is shown in FIG. 21B.
- the GIXD method is also referred to as a thin film method or a Seemann-Bohlin method.
- the XRD spectrum obtained by the GIXD measurement shown in FIG. 21B will be simply referred to as an XRD spectrum.
- the thickness of the CAAC-IGZO film shown in FIG. 21B is 500 nm.
- a peak showing clear crystallinity is detected in the XRD spectrum of the CAAC-IGZO film.
- the crystal structure of the film or substrate can be evaluated by a diffraction pattern (also referred to as a microelectron diffraction pattern) observed by a micro electron diffraction method (NBED: Nano Beam Electron Diffraction).
- the diffraction pattern of the CAAC-IGZO film is shown in FIG. 21C.
- FIG. 21C is a diffraction pattern observed by the NBED in which the electron beam is incident parallel to the substrate.
- electron beam diffraction is performed with the probe diameter set to 1 nm.
- oxide semiconductors may be classified differently from FIG. 21A.
- oxide semiconductors are divided into single crystal oxide semiconductors and other non-single crystal oxide semiconductors.
- the non-single crystal oxide semiconductor include the above-mentioned CAAC-OS and nc-OS.
- the non-single crystal oxide semiconductor includes a polycrystalline oxide semiconductor, a pseudo-amorphous oxide semiconductor (a-like OS: amorphous-like oxide semiconductor), an amorphous oxide semiconductor, and the like.
- CAAC-OS CAAC-OS
- nc-OS nc-OS
- a-like OS the details of the above-mentioned CAAC-OS, nc-OS, and a-like OS will be described.
- CAAC-OS is an oxide semiconductor having a plurality of crystal regions, and the plurality of crystal regions are oriented in a specific direction on the c-axis.
- the specific direction is the thickness direction of the CAAC-OS film, the normal direction of the surface to be formed of the CAAC-OS film, or the normal direction of the surface of the CAAC-OS film.
- the crystal region is a region having periodicity in the atomic arrangement. When the atomic arrangement is regarded as a lattice arrangement, the crystal region is also a region in which the lattice arrangement is aligned. Further, the CAAC-OS has a region in which a plurality of crystal regions are connected in the ab plane direction, and the region may have distortion.
- the strain refers to a region in which a plurality of crystal regions are connected in which the orientation of the lattice arrangement changes between a region in which the lattice arrangement is aligned and a region in which another grid arrangement is aligned. That is, CAAC-OS is an oxide semiconductor that is c-axis oriented and not clearly oriented in the ab plane direction.
- Each of the plurality of crystal regions is composed of one or a plurality of minute crystals (crystals having a maximum diameter of less than 10 nm).
- the maximum diameter of the crystal region is less than 10 nm.
- the size of the crystal region may be about several tens of nm.
- CAAC-OS has indium (In) and oxygen. It tends to have a layered crystal structure (also referred to as a layered structure) in which a layer (hereinafter, In layer) and a layer having elements M, zinc (Zn), and oxygen (hereinafter, (M, Zn) layer) are laminated. There is. Indium and element M can be replaced with each other. Therefore, the (M, Zn) layer may contain indium. In addition, the In layer may contain the element M. The In layer may contain Zn.
- the layered structure is observed as a lattice image in, for example, a high-resolution TEM image.
- the position of the peak indicating the c-axis orientation may vary depending on the type and composition of the metal elements constituting CAAC-OS.
- a plurality of bright spots are observed in the electron diffraction pattern of the CAAC-OS film.
- a certain spot and another spot are observed at point-symmetrical positions with the spot of the incident electron beam passing through the sample (also referred to as a direct spot) as the center of symmetry.
- the lattice arrangement in the crystal region is based on a hexagonal lattice, but the unit lattice is not limited to a regular hexagon and may be a non-regular hexagon. Further, in the above strain, it may have a lattice arrangement such as a pentagon or a heptagon.
- a clear grain boundary cannot be confirmed even in the vicinity of strain. That is, it can be seen that the formation of grain boundaries is suppressed by the distortion of the lattice arrangement. This is because CAAC-OS can tolerate distortion because the arrangement of oxygen atoms is not dense in the ab plane direction and the bond distance between atoms changes due to the replacement of metal atoms. It is thought that this is the reason.
- CAAC-OS for which no clear crystal grain boundary is confirmed, is one of the crystalline oxides having a crystal structure suitable for the semiconductor layer of the transistor.
- a configuration having Zn is preferable.
- In-Zn oxide and In-Ga-Zn oxide are more suitable than In oxide because they can suppress the generation of grain boundaries.
- CAAC-OS is an oxide semiconductor that has high crystallinity and no clear grain boundary is confirmed. Therefore, it can be said that CAAC-OS is unlikely to cause a decrease in electron mobility due to grain boundaries. Further, since the crystallinity of the oxide semiconductor may be lowered due to the mixing of impurities or the generation of defects, CAAC-OS can be said to be an oxide semiconductor having few impurities and defects (oxygen deficiency, etc.). Therefore, the oxide semiconductor having CAAC-OS has stable physical properties. Therefore, the oxide semiconductor having CAAC-OS is resistant to heat and has high reliability. CAAC-OS is also stable against high temperatures (so-called thermal budgets) in the manufacturing process. Therefore, when CAAC-OS is used for the OS transistor, the degree of freedom in the manufacturing process can be expanded.
- nc-OS has periodicity in the atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less).
- nc-OS has tiny crystals. Since the size of the minute crystal is, for example, 1 nm or more and 10 nm or less, particularly 1 nm or more and 3 nm or less, the minute crystal is also referred to as a nanocrystal.
- nc-OS does not show regularity in crystal orientation between different nanocrystals. Therefore, no orientation is observed in the entire film.
- the nc-OS may be indistinguishable from the a-like OS and the amorphous oxide semiconductor depending on the analysis method. For example, when a structural analysis is performed on an nc-OS film using an XRD apparatus, a peak indicating crystallinity is not detected in the Out-of-plane XRD measurement using a ⁇ / 2 ⁇ scan. Further, when electron beam diffraction (also referred to as limited field electron diffraction) using an electron beam having a probe diameter larger than that of nanocrystals (for example, 50 nm or more) is performed on the nc-OS film, a diffraction pattern such as a halo pattern is performed. Is observed.
- electron beam diffraction also referred to as limited field electron diffraction
- nanocrystals for example, 50 nm or more
- electron diffraction also referred to as nanobeam electron diffraction
- an electron beam having a probe diameter for example, 1 nm or more and 30 nm or less
- An electron diffraction pattern in which a plurality of spots are observed in a ring-shaped region centered on a direct spot may be acquired.
- the a-like OS is an oxide semiconductor having a structure between nc-OS and an amorphous oxide semiconductor.
- the a-like OS has a void or low density region. That is, the a-like OS has lower crystallinity than the nc-OS and CAAC-OS.
- a-like OS has a higher hydrogen concentration in the membrane than nc-OS and CAAC-OS.
- CAC-OS relates to the material composition.
- CAC-OS is, for example, a composition of a material in which the elements constituting the metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size close thereto.
- the metal oxide one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 3 nm or less, or a size close thereto.
- the mixed state is also called a mosaic shape or a patch shape.
- CAC-OS has a structure in which the material is separated into a first region and a second region to form a mosaic shape, and the first region is distributed in the membrane (hereinafter, also referred to as a cloud shape). It says.). That is, CAC-OS is a composite metal oxide having a structure in which the first region and the second region are mixed.
- the atomic number ratios of In, Ga, and Zn with respect to the metal elements constituting CAC-OS in the In-Ga-Zn oxide are expressed as [In], [Ga], and [Zn], respectively.
- the first region is a region in which [In] is larger than [In] in the composition of the CAC-OS film.
- the second region is a region in which [Ga] is larger than [Ga] in the composition of the CAC-OS film.
- the first region is a region in which [In] is larger than [In] in the second region and [Ga] is smaller than [Ga] in the second region.
- the second region is a region in which [Ga] is larger than [Ga] in the first region and [In] is smaller than [In] in the first region.
- the first region is a region in which indium oxide, indium zinc oxide, or the like is the main component.
- the second region is a region in which gallium oxide, gallium zinc oxide, or the like is the main component. That is, the first region can be rephrased as a region containing In as a main component. Further, the second region can be rephrased as a region containing Ga as a main component.
- a region containing In as a main component (No. 1) by EDX mapping acquired by using energy dispersive X-ray spectroscopy (EDX: Energy Dispersive X-ray spectroscopy). It can be confirmed that the region (1 region) and the region containing Ga as a main component (second region) have a structure in which they are unevenly distributed and mixed.
- EDX Energy Dispersive X-ray spectroscopy
- CAC-OS When CAC-OS is used for a transistor, the conductivity caused by the first region and the insulating property caused by the second region act in a complementary manner to switch the switching function (On / Off function). Can be added to the CAC-OS. That is, the CAC-OS has a conductive function in a part of the material and an insulating function in a part of the material, and has a function as a semiconductor in the whole material. By separating the conductive function and the insulating function, both functions can be maximized. Therefore, by using CAC-OS for the transistor, high on-current ( Ion ), high field effect mobility ( ⁇ ), and good switching operation can be realized.
- Ion on-current
- ⁇ high field effect mobility
- Oxide semiconductors have various structures, and each has different characteristics.
- the oxide semiconductor of one aspect of the present invention has two or more of amorphous oxide semiconductor, polycrystalline oxide semiconductor, a-like OS, CAC-OS, nc-OS, and CAAC-OS. You may.
- the oxide semiconductor as a transistor, a transistor with high field effect mobility can be realized. Moreover, a highly reliable transistor can be realized.
- the carrier concentration of the oxide semiconductor is 1 ⁇ 10 17 cm -3 or less, preferably 1 ⁇ 10 15 cm -3 or less, more preferably 1 ⁇ 10 13 cm -3 or less, more preferably 1 ⁇ 10 11 cm ⁇ . It is 3 or less, more preferably less than 1 ⁇ 10 10 cm -3 , and more than 1 ⁇ 10 -9 cm -3.
- the impurity concentration in the oxide semiconductor film may be lowered to lower the defect level density.
- a low impurity concentration and a low defect level density is referred to as high-purity intrinsic or substantially high-purity intrinsic.
- An oxide semiconductor having a low carrier concentration may be referred to as a high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor.
- the trap level density may also be low.
- the charge captured at the trap level of the oxide semiconductor takes a long time to disappear, and may behave as if it were a fixed charge. Therefore, a transistor in which a channel formation region is formed in an oxide semiconductor having a high trap level density may have unstable electrical characteristics.
- Impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, silicon and the like.
- the concentration of silicon and carbon in the oxide semiconductor and the concentration of silicon and carbon near the interface with the oxide semiconductor are 2 ⁇ 10 18 atoms / cm 3 or less, preferably 2 ⁇ 10 17 atoms / cm 3 or less.
- the oxide semiconductor contains an alkali metal or an alkaline earth metal
- defect levels may be formed and carriers may be generated. Therefore, a transistor using an oxide semiconductor containing an alkali metal or an alkaline earth metal tends to have a normally-on characteristic. Therefore, the concentration of the alkali metal or alkaline earth metal in the oxide semiconductor obtained by SIMS is set to 1 ⁇ 10 18 atoms / cm 3 or less, preferably 2 ⁇ 10 16 atoms / cm 3 or less.
- the nitrogen concentration in the oxide semiconductor obtained by SIMS is less than 5 ⁇ 10 19 atoms / cm 3 , preferably 5 ⁇ 10 18 atoms / cm 3 or less, and more preferably 1 ⁇ 10 18 atoms / cm 3 or less. , More preferably 5 ⁇ 10 17 atoms / cm 3 or less.
- hydrogen contained in an oxide semiconductor reacts with oxygen bonded to a metal atom to become water, which may form an oxygen deficiency.
- oxygen deficiency When hydrogen enters the oxygen deficiency, electrons that are carriers may be generated.
- a part of hydrogen may be combined with oxygen that is bonded to a metal atom to generate an electron as a carrier. Therefore, a transistor using an oxide semiconductor containing hydrogen tends to have a normally-on characteristic. Therefore, it is preferable that hydrogen in the oxide semiconductor is reduced as much as possible.
- the hydrogen concentration obtained by SIMS is less than 1 ⁇ 10 20 atoms / cm 3 , preferably less than 1 ⁇ 10 19 atoms / cm 3 , and more preferably 5 ⁇ 10 18 atoms / cm. Less than 3 , more preferably less than 1 ⁇ 10 18 atoms / cm 3 .
- FIG. 22A shows a top view of the substrate 711 before the dicing process is performed.
- a semiconductor substrate also referred to as a “semiconductor wafer”
- a plurality of circuit regions 712 are provided on the substrate 711.
- a semiconductor device according to one aspect of the present invention, a CPU, an RF tag, an image sensor, or the like can be provided in the circuit area 712.
- Each of the plurality of circuit areas 712 is surrounded by a separation area 713.
- a separation line (also referred to as a “dicing line”) 714 is set at a position overlapping the separation region 713. By cutting the substrate 711 along the separation line 714, the chip 715 including the circuit area 712 can be cut out from the substrate 711.
- FIG. 22B shows an enlarged view of the chip 715.
- a conductor or a semiconductor layer may be provided in the separation region 713.
- ESD that may occur during the dicing process can be alleviated, and a decrease in the yield of the dicing process can be prevented.
- the dicing step is performed while flowing pure water in which carbon dioxide gas or the like is dissolved to reduce the specific resistance for the purpose of cooling the substrate, removing shavings, preventing antistatic, and the like.
- the amount of pure water used can be reduced. Therefore, the production cost of the semiconductor device can be reduced. Moreover, the productivity of the semiconductor device can be increased.
- the semiconductor layer provided in the separation region 713 it is preferable to use a material having a band gap of 2.5 eV or more and 4.2 eV or less, preferably 2.7 eV or more and 3.5 eV or less.
- a material having a band gap of 2.5 eV or more and 4.2 eV or less preferably 2.7 eV or more and 3.5 eV or less.
- the electronic component is also referred to as a semiconductor package or an IC package.
- the electronic component is completed by combining the semiconductor device shown in the above embodiment and a component other than the semiconductor device in the assembly process (post-process).
- a "backside grinding step” is performed to grind the back surface of the element substrate (the surface on which the semiconductor device or the like is not formed) (step S721). ).
- a "backside grinding step” is performed to grind the back surface of the element substrate (the surface on which the semiconductor device or the like is not formed) (step S721). ).
- a "dicing step” for separating the element substrate into a plurality of chips (chip 715) is performed (step S722).
- a "die bonding step” is performed in which the separated chips are individually picked up and bonded onto the lead frame (step S723).
- a method suitable for the product is appropriately selected, such as bonding with a resin or bonding with a tape.
- the chip may be bonded on the interposer substrate instead of the lead frame.
- a "wire bonding step” is performed in which the leads of the lead frame and the electrodes on the chip are electrically connected by a thin metal wire (wire) (step S724).
- a silver wire or a gold wire can be used as the thin metal wire.
- ball bonding or wedge bonding can be used as the wire bonding.
- the wire-bonded chips are subjected to a "sealing step (molding step)" in which they are sealed with an epoxy resin or the like (step S725).
- a sealing step molding step
- the inside of the electronic component is filled with resin, the circuit part built in the chip and the wire connecting the chip and the reed can be protected from mechanical external force, and the characteristics due to moisture and dust. Deterioration (decrease in reliability) can be reduced.
- a "lead plating step” for plating the leads of the lead frame is performed (step S726).
- the plating process prevents reeds from rusting, and soldering can be performed more reliably when mounting on a printed circuit board later.
- a "molding step” of cutting and molding the reed is performed (step S727).
- a "marking step” is performed in which a printing process (marking) is performed on the surface of the package (step S728). Then, the electronic component is completed through an “inspection step” (step S729) for checking whether the appearance shape is good or bad and whether or not there is a malfunction.
- FIG. 23B shows a schematic perspective view of the completed electronic component as an example of an electronic component.
- the electronic component 750 shown in FIG. 23B shows the lead 755 and the semiconductor device 753.
- the semiconductor device 753 the semiconductor device shown in the above embodiment can be used.
- the electronic component 750 shown in FIG. 23B is mounted on, for example, a printed circuit board 752.
- a plurality of such electronic components 750 are combined and electrically connected to each other on the printed circuit board 752 to complete a substrate (mounting substrate 754) on which the electronic components are mounted.
- the completed mounting board 754 is used for electronic devices and the like.
- a display device such as a television or a monitor, a lighting device, a desktop or notebook type personal computer, a word processor, a DVD (Digital Any Disc), or the like.
- Image playback device portable CD player, radio, tape recorder, headphone stereo, stereo, table clock, wall clock, cordless telephone handset, transceiver, mobile phone, car phone, portable type Large game machines such as game machines, tablet terminals, pachinko machines, calculators, portable information terminals (also called “portable information terminals"), electronic notebooks, electronic book terminals, electronic translators, voice input devices, video cameras , Digital still camera, electric shaver, high frequency heating device such as microwave oven, electric rice cooker, electric washing machine, electric vacuum cleaner, water heater, fan, hair dryer, air conditioner, humidifier, dehumidifier, etc.
- high frequency heating device such as microwave oven, electric rice cooker, electric washing machine, electric vacuum cleaner, water heater, fan, hair dryer, air conditioner, humidifier, dehumidifier, etc.
- Dishwashers dish dryers, clothes dryers, duvet dryers, electric refrigerators, electric freezers, electric freezers, DNA storage freezers, flashlights, tools such as chainsaws, smoke detectors, medical equipment such as dialysis machines, etc. Can be mentioned. Further examples include industrial equipment such as guide lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage systems, power leveling and power storage devices for smart grids.
- mobile objects propelled by electric motors using electric power from power storage devices are also included in the category of electronic devices.
- the moving body include an electric vehicle (EV), a hybrid vehicle (HEV) having an internal combustion engine and an electric motor, a plug-in hybrid vehicle (PHEV), a tracked vehicle in which these tire wheels are changed to an infinite track, and an electric assist.
- EV electric vehicle
- HEV hybrid vehicle
- PHEV plug-in hybrid vehicle
- Motorized bicycles including bicycles, motorcycles, electric wheelchairs, golf carts, small or large vessels, submarines, helicopters, aircraft, rockets, artificial satellites, space probes, planetary explorers, spacecraft, etc.
- the semiconductor device or electronic component according to one aspect of the present invention can be used for a communication device or the like built in these electronic devices.
- Electronic devices include sensors (force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, voice, time, hardness, electric field, current, voltage, power, radiation, etc. It may have a function of measuring flow rate, humidity, inclination, vibration, odor or infrared rays).
- Electronic devices can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, a function to execute various software (programs), wireless communication. It can have a function, a function of reading a program or data recorded on a recording medium, and the like.
- the display device 8000 is an example of an electronic device using the semiconductor device 8004 according to one aspect of the present invention.
- the display device 8000 corresponds to a display device for receiving TV broadcasts, and includes a housing 8001, a display unit 8002, a speaker unit 8003, a semiconductor device 8004, a power storage device 8005, and the like.
- the semiconductor device 8004 according to one aspect of the present invention is provided inside the housing 8001.
- the semiconductor device 8004 can hold control information, control programs, and the like.
- the semiconductor device 8004 has a communication function, and the display device 8000 can function as an IoT device.
- the display device 8000 can be supplied with electric power from a commercial power source, or can use the electric power stored in the power storage device 8005.
- the display unit 8002 includes a light emitting display device having a light emitting element such as a liquid crystal display device and an organic EL element in each pixel, an electrophoresis display device, a DMD (Digital Micromirror Device), a PDP (Plasma Display Panel), and a FED (Field Emission).
- a display device such as a Display
- a light emitting element such as a liquid crystal display device and an organic EL element in each pixel
- an electrophoresis display device such as a liquid crystal display device and an organic EL element in each pixel
- DMD Digital Micromirror Device
- PDP Plasma Display Panel
- FED Field Emission
- the display device includes all information display devices such as those for receiving TV broadcasts, those for personal computers, and those for displaying advertisements.
- the stationary lighting device 8100 is an example of an electronic device using the semiconductor device 8103 according to one aspect of the present invention.
- the lighting device 8100 includes a housing 8101, a light source 8102, a semiconductor device 8103, a power storage device 8105, and the like.
- FIG. 24 illustrates a case where the semiconductor device 8103 is provided inside the ceiling 8104 in which the housing 8101 and the light source 8102 are installed, but the semiconductor device 8103 is provided inside the housing 8101. You may.
- the semiconductor device 8103 can hold information such as the emission brightness of the light source 8102, a control program, and the like.
- the semiconductor device 8103 has a communication function, and the lighting device 8100 can function as an IoT device.
- the lighting device 8100 can be supplied with electric power from a commercial power source, or can use the electric power stored in the power storage device.
- FIG. 24 illustrates the stationary lighting device 8100 provided on the ceiling 8104
- the semiconductor device according to one aspect of the present invention is provided on a side wall 8405, a floor 8406, a window 8407, or the like other than the ceiling 8104. It can be used for a stationary lighting device provided, or it can be used for a desktop lighting device or the like.
- the light source 8102 an artificial light source that artificially obtains light by using electric power can be used.
- incandescent light bulbs, discharge lamps such as fluorescent lamps, and light emitting elements such as LEDs and organic EL elements are examples of the artificial light sources.
- the air conditioner having the indoor unit 8200 and the outdoor unit 8204 is an example of an electronic device using the semiconductor device 8203 according to one aspect of the present invention.
- the indoor unit 8200 includes a housing 8201, an air outlet 8202, a semiconductor device 8203, a power storage device 8205, and the like.
- FIG. 24 illustrates the case where the semiconductor device 8203 is provided in the indoor unit 8200, the semiconductor device 8203 may be provided in the outdoor unit 8204. Alternatively, the semiconductor device 8203 may be provided in both the indoor unit 8200 and the outdoor unit 8204.
- the semiconductor device 8203 can hold control information of the air conditioner, a control program, and the like.
- the semiconductor device 8203 has a communication function, and the air conditioner can function as an IoT device. Further, the air conditioner can be supplied with electric power from a commercial power source, or can use the electric power stored in the power storage device 8205.
- FIG. 24 illustrates a separate type air conditioner composed of an indoor unit and an outdoor unit
- the integrated air conditioner having the functions of the indoor unit and the outdoor unit in one housing may be used.
- a semiconductor device according to one aspect of the present invention can also be used.
- the electric refrigerator / freezer 8300 is an example of an electronic device using the semiconductor device 8304 according to one aspect of the present invention.
- the electric refrigerator / freezer 8300 includes a housing 8301, a refrigerator door 8302, a freezer door 8303, a semiconductor device 8304, a power storage device 8305, and the like.
- the power storage device 8305 is provided inside the housing 8301.
- the semiconductor device 8304 can hold control information, a control program, and the like of the electric refrigerator / freezer 8300.
- the semiconductor device 8304 has a communication function, and the electric refrigerator / freezer 8300 can function as an IoT device.
- the electric refrigerator / freezer 8300 can be supplied with electric power from a commercial power source, or can use the electric power stored in the power storage device 8305.
- FIG. 25A shows an example of a wristwatch-type mobile information terminal.
- the mobile information terminal 6100 includes a housing 6101, a display unit 6102, a band 6103, an operation button 6105, and the like. Further, the portable information terminal 6100 includes a secondary battery and a semiconductor device or electronic component according to one aspect of the present invention. By using the semiconductor device or electronic component according to one aspect of the present invention for the mobile information terminal 6100, the mobile information terminal 6100 can function as an IoT device.
- FIG. 25B shows an example of a mobile phone.
- the personal digital assistant 6200 includes an operation button 6203, a speaker 6204, a microphone 6205, and the like, in addition to the display unit 6202 incorporated in the housing 6201.
- the mobile information terminal 6200 includes a fingerprint sensor 6209 in an area overlapping the display unit 6202.
- the fingerprint sensor 6209 may be an organic light sensor. Since the fingerprint differs depending on the individual, the fingerprint sensor 6209 can acquire the fingerprint pattern and perform personal authentication. Light emitted from the display unit 6202 can be used as a light source for acquiring the fingerprint pattern by the fingerprint sensor 6209.
- the portable information terminal 6200 includes a secondary battery and a semiconductor device or an electronic component according to one aspect of the present invention.
- the portable information terminal 6200 can function as an IoT device.
- FIG. 25C shows an example of a cleaning robot.
- the cleaning robot 6300 has a display unit 6302 arranged on the upper surface of the housing 6301, a plurality of cameras 6303 arranged on the side surface, a brush 6304, an operation button 6305, various sensors, and the like. Although not shown, the cleaning robot 6300 is provided with tires, suction ports, and the like. The cleaning robot 6300 is self-propelled, can detect dust 6310, and can suck dust from a suction port provided on the lower surface.
- the cleaning robot 6300 can analyze the image taken by the camera 6303 and determine the presence or absence of obstacles such as walls, furniture, and steps. Further, when an object that is likely to be entangled with the brush 6304 such as wiring is detected by image analysis, the rotation of the brush 6304 can be stopped.
- the cleaning robot 6300 includes a secondary battery and a semiconductor device or electronic component according to one aspect of the present invention. By using the semiconductor device or electronic component according to one aspect of the present invention for the cleaning robot 6300, the cleaning robot 6300 can function as an IoT device.
- FIG. 25D shows an example of a robot.
- the robot 6400 shown in FIG. 25D includes an arithmetic unit 6409, an illuminance sensor 6401, a microphone 6402, an upper camera 6403, a speaker 6404, a display unit 6405, a lower camera 6406, an obstacle sensor 6407, and a moving mechanism 6408.
- the microphone 6402 has a function of detecting the user's voice, environmental sound, and the like. Further, the speaker 6404 has a function of emitting sound. The robot 6400 can communicate with the user by using the microphone 6402 and the speaker 6404.
- the display unit 6405 has a function of displaying various information.
- the robot 6400 can display the information desired by the user on the display unit 6405.
- the display unit 6405 may be equipped with a touch panel. Further, the display unit 6405 may be a removable information terminal, and by installing the display unit 6405 at a fixed position of the robot 6400, charging and data transfer are possible.
- the upper camera 6403 and the lower camera 6406 have a function of photographing the surroundings of the robot 6400. Further, the obstacle sensor 6407 can detect the presence or absence of an obstacle in the traveling direction when the robot 6400 moves forward by using the moving mechanism 6408. The robot 6400 can recognize the surrounding environment and move safely by using the upper camera 6403, the lower camera 6406, and the obstacle sensor 6407.
- the light emitting device of one aspect of the present invention can be used for the display unit 6405.
- the robot 6400 includes a secondary battery and a semiconductor device or electronic component according to one aspect of the present invention inside the robot 6400.
- the robot 6400 can function as an IoT device.
- FIG. 25E shows an example of an air vehicle.
- the flying object 6500 shown in FIG. 25E has a propeller 6501, a camera 6502, a battery 6503, and the like, and has a function of autonomously flying.
- the image data taken by the camera 6502 is stored in the electronic component 6504.
- the electronic component 6504 can analyze the image data and detect the presence or absence of an obstacle when moving.
- the remaining battery level can be estimated from the change in the storage capacity of the battery 6503 by the electronic component 6504.
- the flying object 6500 includes a semiconductor device or an electronic component according to an aspect of the present invention inside the flying object 6500. By using the semiconductor device or electronic component according to one aspect of the present invention for the flying object 6500, the flying object 6500 can function as an IoT device.
- FIG. 25F shows an example of an automobile.
- the automobile 7160 has an engine, tires, brakes, a steering device, a camera, and the like.
- the automobile 7160 includes a semiconductor device or an electronic component according to an aspect of the present invention inside the automobile 7160.
- the semiconductor device or the electronic component according to one aspect of the present invention in the automobile 7160 can function as an IoT device.
- a normally-off CPU (also referred to as "Noff-CPU") can be realized by using the OS transistor shown in the present specification and the like.
- the Nonf-CPU is an integrated circuit including a normally-off type transistor that is in a non-conducting state (also referred to as an off state) even when the gate voltage is 0V.
- the Noff-CPU can stop the power supply to the circuits that do not need to operate in the Noff-CPU and put the circuits in the standby state. No power is consumed in the circuit where the power supply is stopped and the circuit is in the standby state. Therefore, the Nonf-CPU can minimize the amount of power used. Further, the Nonf-CPU can retain information necessary for operation such as setting conditions for a long period of time even if the power supply is stopped. To return from the standby state, it is only necessary to restart the power supply to the circuit, and it is not necessary to rewrite the setting conditions and the like. That is, high-speed recovery from the standby state is possible. In this way, the Nonf-CPU can reduce the power consumption without significantly reducing the operating speed.
- the Noff-CPU can be suitably used for a small-scale system such as an IoT terminal device (also referred to as an "endpoint microcomputer") 803 in the field of IoT (Internet of Things).
- IoT terminal device also referred to as an "endpoint microcomputer” 803 in the field of IoT (Internet of Things).
- FIG. 26 shows the hierarchical structure of the IoT network and the tendency of the required specifications.
- FIG. 26 shows power consumption 804 and processing performance 805 as required specifications.
- the hierarchical structure of the IoT network is roughly divided into a cloud field 801 which is an upper layer and an embedded field 802 which is a lower layer.
- the cloud field 801 includes, for example, a server.
- the embedded field 802 includes, for example, machines, industrial robots, in-vehicle devices, home appliances, and the like.
- the semiconductor device according to one aspect of the present invention can be suitably used for a communication device of an IoT terminal device that requires low power consumption.
- endpoint indicates the terminal region of the embedded field 802.
- devices used for endpoints include microcomputers used in factories, home appliances, infrastructure, agriculture, and the like.
- FIG. 27 shows an image diagram of factory automation as an application example of an endpoint microcomputer.
- the factory 884 is connected to the cloud 883 via an internet line (Internet).
- the cloud 883 is also connected to the home 881 and the office 882 via an internet line.
- the Internet line may be a wired communication system or a wireless communication system.
- a semiconductor device according to one aspect of the present invention is used as a communication device in accordance with communication standards such as a 4th generation mobile communication system (4G) and a 5th generation mobile communication system (5G). All you have to do is perform wireless communication.
- the factory 884 may be connected to the factory 885 and the factory 886 via an internet line.
- the Factory 884 has a master device (control device) 831.
- the master device 831 has a function of connecting to the cloud 883 and exchanging information. Further, the master device 831 is connected to a plurality of industrial robots 842 included in the IoT terminal device 841 via an M2M (Machine to Machine) interface 832.
- M2M interface 832 for example, industrial Ethernet (“Ethernet” is a registered trademark) which is a kind of wired communication method, local 5G which is a kind of wireless communication method, or the like may be used.
- the factory manager can connect to the factory 884 from the home 881 or the office 882 via the cloud 883 and know the operating status. In addition, it is possible to check for incorrect or missing items, indicate the location, and measure the tact time.
- the cutoff frequency (f T ) of the OS-FET is calculated by the following mathematical formula 1.
- C g is the gate capacitance of the OS-FET
- g m is the transconductance of the OS-FET.
- Transconductance g m in certain drain voltage can be obtained from Equation 2 below.
- Vg is the gate voltage of the OS-FET
- Id is the drain current
- Vd is the drain voltage
- FIG. 28A to 28C show the structure of the OS-FET used in the calculation.
- FIG. 28A is a schematic cross-sectional view in the L-long direction at the center of the channel of the OS-FET.
- FIG. 28B is a schematic cross-sectional view in the W width direction at the central portion of the channel of the OS-FET.
- FIG. 28C is a schematic cross-sectional view in the W width direction in the source region or drain region of the OS-FET.
- the OS-FET has BGE, BGI1, BGI2, OS1, OS2, SD, TGI, and TGE.
- the BGE functions as a back gate electrode
- the TGE functions as a gate electrode (also referred to as a top gate electrode).
- OS1 and OS2 are metal oxides having a laminated structure.
- the SD functions as one of the source electrode and the drain electrode, or the other of the source electrode and the drain electrode, respectively.
- BGI1 and BGI2 function as a gate insulating film having a laminated structure provided between BGE and OS1, and TGI functions as a gate insulating film provided between OS2 and TGE.
- the width of L that is, TGE in FIG. 28A indicates the channel length
- the width of W that is, OS1 and OS2 in FIG. 28B indicates the channel width
- Table 1 shows the calculation conditions.
- FIG. 29 shows the calculation result of the cutoff frequency of the OS-FET obtained under the above conditions.
- the horizontal axis represents the drain voltage of the OS-FET (unit:: V)
- the vertical axis represents the cut-off frequency f T (GHz units).
- the gate voltage and the drain voltage have the same value.
- the channel length of the OS-FET was 30 nm
- the channel width was 30 nm.
- the cutoff frequency of the OS-FET is 38.6 GHz
- the cutoff frequency is 71.5 GHz
- the cutoff frequency is When the drain voltage was 104.4 GHz and the drain voltage was 4 V, the cutoff frequency was 132.8 GHz
- the cutoff frequency was 160.1 GHz. It was confirmed by calculation that a cutoff frequency of 100 GHz or higher can be obtained by setting the drain voltage to 3 V or higher.
- the OS-FET can be suitably used in the semiconductor device which is one aspect of the present invention.
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Abstract
Description
図2は、半導体装置を説明する図である。
図3は、半導体装置を説明する図である。
図4は、半導体装置を説明する図である。
図5は、半導体装置を説明する図である。
図6Aは、電子機器を説明する図である。図6Bは、半導体装置を説明する図である。
図7は、無線送受信機の構成例を説明する図である。
図8Aおよび図8Bは、無線送受信機の構成例を説明する図である。
図9は、半導体装置を説明する図である。
図10は、半導体装置を説明する図である。
図11A、図11Bは、パワーアンプを説明する回路図である。図11C、図11Dは、コプレーナ導波路を説明するレイアウト図である。
図12は、半導体装置の構成例を説明する図である。
図13は、トランジスタの電気特性を説明するグラフである。
図14は、半導体装置を説明する回路図である。
図15は、半導体装置の構成例を示す図である。
図16は、半導体装置の構成例を示す図である。
図17A乃至図17Cは、トランジスタの構成例を示す図である。
図18A乃至図18Cは、トランジスタの構成例を示す図である。
図19A乃至図19Cは、トランジスタの構成例を示す図である。
図20は、半導体装置の構成例を示す図である。
図21AはIGZOの結晶構造の分類を説明する図である。図21BはCAAC−IGZO膜のXRDスペクトルを説明する図である。図21CはCAAC−IGZO膜の極微電子線回折パターンを説明する図である。
図22Aは、半導体ウエハの上面図である。図22Bは、チップの拡大図である。
図23Aは、電子部品の作製工程例を説明するフローチャートである。図23Bは、電子部品の斜視模式図である。
図24は、電子機器の一例を示す図である。
図25A乃至図25Fは、電子機器の一例を示す図である。
図26は、IoTネットワークの階層構造と要求仕様の傾向を示す図である。
図27は、ファクトリーオートメーションのイメージ図である。
図28A乃至図28Cは、遮断周波数の計算に用いたOS−FETの構造を示す図である。
図29は、OS−FETの遮断周波数の計算結果を示す図である。
本発明の一態様に係る半導体装置について、図面を用いて説明する。図1は、電子機器が有する半導体装置10の構成を示すブロック図である。
他の半導体装置または基地局などから送信された信号941は、アンテナ931および共用器921を介して、受信信号として低ノイズアンプ901に入力される。共用器921は、無線信号の送信と受信を1つのアンテナで実現する機能を有する。
変調器915は、制御信号やデータ信号などを無線送受信機900から他の半導体装置または基地局などに送信するための基本信号を生成する機能を有する。基本信号は、バンドパスフィルタ914を介して混合器913に供給される。
本実施の形態では、送受信制御装置の構成について説明する。送受信制御装置は、高周波信号を送信するためのパワーアンプを有し、送信する信号は信号処理装置によって生成、または信号処理装置から生成した信号と発振器によって生成された信号を混合器を用いて混合して生成される。高い周波数帯域で動作するパワーアンプは、伝送路における信号の損失を小さくすることが求められる。また、パワーアンプから放射する放射ノイズが他の回路(以降、回路には、回路を構成するトランジスタまたは配線などを含む)などに対して影響を与えないようにすることが求められる。また、パワーアンプは、他の回路が放射する放射ノイズからパワーアンプが影響を受けないようにすることが求められる。本実施の形態では、パワーアンプが他の回路に対して与える放射ノイズの影響、及び、パワーアンプが他の回路から与えられる放射ノイズの影響、の双方を低減する構成について説明する。なお、パワーアンプは、図8のパワーアンプ911に相当する。
本実施の形態では、上記実施の形態で説明した半導体装置に適用可能なトランジスタの構成について説明する。一例として、異なる電気特性を有するトランジスタを積層して設ける構成について説明する。当該構成とすることで、半導体装置の設計自由度を高めることができる。また、異なる電気特性を有するトランジスタを積層して設けることで、半導体装置の集積度を高めることができる。
図18A乃至図18Cに示すトランジスタ500Aは、図17A、図17Bに示すトランジスタ500の変形例である。図18Aはトランジスタ500Aの上面図であり、図18Bはトランジスタ500Aのチャネル長方向の断面図であり、図18Cはトランジスタ500Aのチャネル幅方向の断面図である。なお、図18A乃至図18Cに示す構成は、トランジスタ550等、本発明の一態様の半導体装置が有する他のトランジスタにも適用することができる。
図19A、図19Bおよび図19Cを用いて、トランジスタ500Bの構成例を説明する。図19Aはトランジスタ500Bの上面図である。図19Bは、図19Aに一点鎖線で示すL1−L2部位の断面図である。図19Cは、図19Aに一点鎖線で示すW1−W2部位の断面図である。なお、図19Aの上面図では、図の明瞭化のために一部の要素の記載を省略している。
本実施の形態では、金属酸化物の一種である酸化物半導体について説明する。
まず、酸化物半導体における、結晶構造の分類について、図21Aを用いて説明を行う。図21Aは、酸化物半導体、代表的にはIGZO(Inと、Gaと、Znと、を含む金属酸化物)の結晶構造の分類を説明する図である。
なお、酸化物半導体は、結晶構造に着目した場合、図21Aとは異なる分類となる場合がある。例えば、酸化物半導体は、単結晶酸化物半導体と、それ以外の非単結晶酸化物半導体と、に分けられる。非単結晶酸化物半導体としては、例えば、上述のCAAC−OS、およびnc−OSがある。また、非単結晶酸化物半導体には、多結晶酸化物半導体、擬似非晶質酸化物半導体(a−like OS:amorphous−like oxide semiconductor)、非晶質酸化物半導体、などが含まれる。
CAAC−OSは、複数の結晶領域を有し、当該複数の結晶領域はc軸が特定の方向に配向している酸化物半導体である。なお、特定の方向とは、CAAC−OS膜の厚さ方向、CAAC−OS膜の被形成面の法線方向、またはCAAC−OS膜の表面の法線方向である。また、結晶領域とは、原子配列に周期性を有する領域である。なお、原子配列を格子配列とみなすと、結晶領域とは、格子配列の揃った領域でもある。さらに、CAAC−OSは、a−b面方向において複数の結晶領域が連結する領域を有し、当該領域は歪みを有する場合がある。なお、歪みとは、複数の結晶領域が連結する領域において、格子配列の揃った領域と、別の格子配列の揃った領域と、の間で格子配列の向きが変化している箇所を指す。つまり、CAAC−OSは、c軸配向し、a−b面方向には明らかな配向をしていない酸化物半導体である。
nc−OSは、微小な領域(例えば、1nm以上10nm以下の領域、特に1nm以上3nm以下の領域)において原子配列に周期性を有する。別言すると、nc−OSは、微小な結晶を有する。なお、当該微小な結晶の大きさは、例えば、1nm以上10nm以下、特に1nm以上3nm以下であることから、当該微小な結晶をナノ結晶ともいう。また、nc−OSは、異なるナノ結晶間で結晶方位に規則性が見られない。そのため、膜全体で配向性が見られない。したがって、nc−OSは、分析方法によっては、a−like OSや非晶質酸化物半導体と区別が付かない場合がある。例えば、nc−OS膜に対し、XRD装置を用いて構造解析を行うと、θ/2θスキャンを用いたOut−of−plane XRD測定では、結晶性を示すピークが検出されない。また、nc−OS膜に対し、ナノ結晶よりも大きいプローブ径(例えば50nm以上)の電子線を用いる電子線回折(制限視野電子線回折ともいう。)を行うと、ハローパターンのような回折パターンが観測される。一方、nc−OS膜に対し、ナノ結晶の大きさと近いかナノ結晶より小さいプローブ径(例えば1nm以上30nm以下)の電子線を用いる電子線回折(ナノビーム電子線回折ともいう。)を行うと、ダイレクトスポットを中心とするリング状の領域内に複数のスポットが観測される電子線回折パターンが取得される場合がある。
a−like OSは、nc−OSと非晶質酸化物半導体との間の構造を有する酸化物半導体である。a−like OSは、鬆又は低密度領域を有する。即ち、a−like OSは、nc−OSおよびCAAC−OSと比べて、結晶性が低い。また、a−like OSは、nc−OSおよびCAAC−OSと比べて、膜中の水素濃度が高い。
次に、上述のCAC−OSの詳細について、説明を行う。なお、CAC−OSは材料構成に関する。
CAC−OSとは、例えば、金属酸化物を構成する元素が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、またはその近傍のサイズで偏在した材料の一構成である。なお、以下では、金属酸化物において、一つまたは複数の金属元素が偏在し、該金属元素を有する領域が、0.5nm以上10nm以下、好ましくは、1nm以上3nm以下、またはその近傍のサイズで混合した状態をモザイク状、またはパッチ状ともいう。
続いて、上記酸化物半導体をトランジスタに用いる場合について説明する。
ここで、酸化物半導体中における各不純物の影響について説明する。
本実施の形態では上述した半導体装置の応用例について説明する。
図22Aは、ダイシング処理が行なわれる前の基板711の上面図を示している。基板711としては、例えば、半導体基板(「半導体ウエハ」ともいう。)を用いることができる。基板711上には、複数の回路領域712が設けられている。回路領域712には、本発明の一態様に係る半導体装置や、CPU、RFタグ、またはイメージセンサなどを設けることができる。
チップ715を電子部品に適用する例について、図23を用いて説明する。なお、電子部品は、半導体パッケージ、またはIC用パッケージともいう。電子部品は、端子取り出し方向や、端子の形状に応じて、複数の規格や名称が存在する。
次に、本発明の一態様に係る半導体装置または上記電子部品を備えた電子機器の例について説明を行う。
本明細書などに示したOSトランジスタを用いて、ノーマリーオフCPU(「Noff−CPU」ともいう。)を実現することができる。なお、Noff−CPUとは、ゲート電圧が0Vであっても非導通状態(オフ状態ともいう)であるノーマリーオフ型のトランジスタを含む集積回路である。
Claims (6)
- 第1の層上に金属酸化物を介して第2の層を有する半導体装置であって、
前記第1の層は、シリコンを含む第1の半導体層を有する第1のトランジスタを有し、
前記第2の層は、インピーダンス整合回路を有し、
前記インピーダンス整合回路は、ガリウムを含む第2の半導体層を有する第2のトランジスタを有し、
前記第1のトランジスタは、前記金属酸化物との間に第1の結合容量を形成し、
前記インピーダンス整合回路は、前記金属酸化物との間に第2の結合容量を形成し、
前記インピーダンス整合回路は、前記第2の結合容量を介して前記金属酸化物と電気的に接続される、半導体装置。 - 請求項1において、
前記金属酸化物は、ハフニウム、アルミニウム、またはタンタルの少なくとも一つと、酸素を含む半導体装置。 - 請求項1において、
前記インピーダンス整合回路は、伝送路を有し、
前記伝送路は、コプレーナ導波路を有する半導体装置。 - 請求項1において、
前記第2のトランジスタの上方には、インダクタが形成され、
前記インダクタのさらに上方には、アンテナが形成される、
半導体装置。 - 請求項1において、
前記第2のトランジスタは、前記第1のトランジスタと重ならない位置に配置される半導体装置。 - 請求項1乃至請求項5のいずれか一において、
前記第1の層に対して前記金属酸化物と反対側にセンサモジュールが配置される半導体装置。
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