WO2021067918A1 - Dispositif électrochromique ultramince à couche isolante multicouche pour modulation optique élevée - Google Patents

Dispositif électrochromique ultramince à couche isolante multicouche pour modulation optique élevée Download PDF

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WO2021067918A1
WO2021067918A1 PCT/US2020/054223 US2020054223W WO2021067918A1 WO 2021067918 A1 WO2021067918 A1 WO 2021067918A1 US 2020054223 W US2020054223 W US 2020054223W WO 2021067918 A1 WO2021067918 A1 WO 2021067918A1
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electrochromic
layer
stratum
insulating
electrical communication
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PCT/US2020/054223
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English (en)
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Liping Ma
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Nitto Denko Corporation
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
    • G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
    • G02F1/1524—Transition metal compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
    • G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
    • G02F1/1525—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material characterised by a particular ion transporting layer, e.g. electrolyte
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F2001/1502—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect complementary cell

Definitions

  • the embodiments herein relate to electrochromic elements and devices, such as electrochromic elements and devices having one or more optical properties that may be changed upon application of an electric potential.
  • Electrochromic coatings or materials may be used for a number of different purposes.
  • One such purpose includes controllingthe amount of light and heat passingthrough a window based on a user-controlled electrical potential that is applied to an electrochromic coating.
  • An electrochromic coating or material can reduce the amount of energy necessary to heat or cool a room, and may provide privacy. For example, a clear state of the electrochromic coating or material having an optical transmission of about 60-80% can be switched to a darkened state having an optical transmission of between 0.1-10% where the energy flow into the room is limited and additional privacy is provided. Due to large amounts of glass found in various types of windows, such as skylights, aircraft windows, residential and commercial building windows, and automobile windows, there may be energy savings provided by the use of an electrochromic coating or material on glass.
  • the present disclosure relates to electrochromic elements and devices.
  • the electrochromic elements and devices described herein exhibit insulative properties that help to retain changes to the one or more optical properties of the electrochromic material containing layers following application of the electric potential.
  • Some embodiments include an electrochromic element or device comprising a first electrode layer, a first electrochromic layer, an insulating layer, a second electrochromic layer and a second electrode layer.
  • the first and second electrode layers may comprise a transparent conductive material.
  • the first electrochromic layer can comprise a p-type electrochromic material in electrical communication with the first electrode layer.
  • the second electrochromic layer can comprise a p-type electrochromic material in electrical communication with the second electrode layer.
  • Some embodiments include an insulating layer, wherein the insulating layer can comprise a plurality of strata. In some embodiments, at least one of the strata can comprise a material with a band gap of at least 5 eV.
  • the strata can comprise a high dielectric constant material with a relative dielectric constant of at least 8.
  • the insulating layer comprises 3 strata.
  • the first and the third stratum can comprise two opposing outer strata.
  • the first and the third stratum can comprise materials with a band gap of at least 5 eV.
  • the second stratum is between the two opposing outer strata, or the first stratum and the third stratum.
  • the second stratum may comprise a high dielectric constant material with a relative dielectric constant of at least 8.
  • the first stratum of the insulating layer can be in electrical communication with the p-type electrochromic material of the first electrochromic layer.
  • the third stratum of the insulating layer is in electrical communication with the p-type electrochromic material of the second electrochromic layer.
  • the second stratum of the insulating layer can further comprise a material with a dielectric constant at least 2 times larger than the dielectric constant of the material comprising the first and third strata.
  • the electrically insulating material of the outer two strata can comprise aluminum oxide.
  • the electrically insulating material of the second stratum comprises titanium oxide.
  • the p-type electrochromic material can comprise nickel oxide.
  • the n-type electrochromic material can comprise a tungsten oxide.
  • Some embodiments include an electrochromic device, wherein the electrochromic device comprises an electrochromic element described above in electrical communication with a power source.
  • the electrochromic device comprises an electrochromic element described above in electrical communication with a power source.
  • at least one optical property of the electrochromic material of the electrochromic device may be changed from a first state to a second state upon application of an electric potential.
  • Some embodiments include a method for making an electrochromic element or device. BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a schematic illustration of one embodiment of an electrochromic element.
  • FIG. 2 is a schematic illustration of one embodiment of an electrochromic element.
  • FIG. 3 is an illustration showing an embodiment of an electrochromic element described herein.
  • FIG. 4 is an illustration showing an embodiment of an electrochromic element describe herein.
  • FIG. 5 is a graphic illustration showing the total transmission (%T) as a function of wavelength (nm) of the device of Comparative Example CE-1 in an ON state and OFF state.
  • FIG. 6 is a graphic illustration showing the total transmission (%T) as a function of wavelength (nm) of the device of Comparative Example CE-2 in an ON state and OFF state.
  • FIG. 7 is a graphic illustration showing the total transmission (%T) as a function of wavelength (nm) of the device of Example EC-1 in an ON state and OFF state.
  • FIG. 8 is a graphic illustration showing the On-state transmission (%T) as a function of wavelength (nm) for examples CE-1, CE-2, and EC-1.
  • the term "transparent” includes a property in which the corresponding material transmits or allows light to pass through the material.
  • the transmittance of light through the transparent material may be about 50-100%, such as at least about 50%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, at least about 95%, at least about 99%, about 50-60%, about 60-70%, about 70-80%, about 80-90%, about 90-95%, or about 95%-100%.
  • the term "light” as used herein includes light in a wavelength region targeted by the electrochromic element or device.
  • the electrochromic material or device when used as a filter of an image pickup apparatus for a visible light region, light in the visible light region is targeted, and when the electrochromic material is used as a filter of an image pickup apparatus for an infrared region, light in the infrared region is targeted.
  • darkness efficiency includes the efficiency of the electrochromic element's/device's optical modulation ratio per unit of the electrochromic layer thickness represented by the following formula:
  • EC-layer thickness (nm) wherein T% is the transmittance percentage in the off-state (clear state) and the on-state (dark state) and the EC layer thickness is the thickness of the electrochromic stack in nm.
  • band gap energy gap
  • eV electron volts
  • stratum or the plural “strata” as used herein includes a thin layer within a structure.
  • the present disclosure generally relates to electrochromic (EC) elements and devices, which include an electrochromic material having one or more optical properties, such as transparency, absorption, or transmittance, that may be changed upon application of an electric potential. More particularly, but not exclusively, the present disclosure relates to an EC element and device utilizing ultrathin layers, exhibiting improved on- and off-state transmittance differentiation properties following application of the electric potential.
  • an electrochromic element or device comprises a first electrode and a second electrode.
  • One or more insulating layers and one or more electrochromic layers may be disposed between the first electrode and the second electrode.
  • a conductive nanostructured metal layer may be disposed on an electrochromic layer.
  • the insulating layer comprises or consists of multiple strata. Additional layers, such as a protection layer, may also be present in some embodiments of the electrochromic elements and devices disclosed herein.
  • An electrochromic element such as electrochromic element 10 in FIG. 1, comprises (e.g., in the order depicted from bottom to top), a first electrode layer 12, which is a conductive layer; a first electrochromic layer 14, comprising an electrochromic material; an insulating layer 16, which may also be termed a blocking layer, a barrier layer, or a tunneling layer, and which comprises an electrically insulating material or materials; a second electrochromic layer 18, comprising an electrochromic material; and a second electrode layer 20, which is a conductive material.
  • the layers of the electrochromic element are in electrical and optical communication with one another.
  • the electrochromic layers of the electrochromic element may change from a first state (clear or transparent) to a second state (colored or darkened).
  • the recited layers of the element are disposed in the recited order from bottom to top. In some embodiments, the recited layers of the electrochromic element are contacting one another in that order from bottom to top. Alternative arrangements of the layers of the electrochromic element are also contemplated.
  • an electrochromic device comprises the electrochromic element described above, or elsewhere herein, and a power source in electrical communication with the first electrode and the second electrode, to provide an electric potential to the electrochromic device.
  • an electrochromic element or device such as electrochromic element or device 110 comprises (e.g., in the order depicted) a first electrode layer 112, which is a conductive layer; a first electrochromic layer 114; comprising an electrochromic material; an insulating layer 116, which may also be termed a blocking layer, a barrier layer, or a tunneling layer, and which comprises one or more electrically conductive materials, wherein the insulating layer may comprise a plurality of strata; a second electrochromic layer 118, comprising an electrochromic material; a second electrode layer 120, which is a conductive material; and, in the case of an electrochromic device, a power source, such as power source 134, which is in electrical communication with the first electrode and the second electrode.
  • a power source such as power source 134
  • the insulating layer may comprise three strata, a first stratum 113, a second stratum 115, and a third stratum 117.
  • the first stratum 113 of insulating layer 116 may be disposed on the first electrochromic layer 114.
  • the first stratum is in electrical communication with the first electrochromic layer.
  • the second stratum is disposed on the first stratum and is in electrical communication with the first stratum.
  • the third stratum is disposed on the second stratum and is in electrical communication with both the second stratum and with the second electrochromic layer.
  • the layers of the electrochromic device are in electrical and optical communication with one another.
  • the electrochromic layers of the electrochromic device may change from a first state (clear or transparent) to a second state (colored or darkened).
  • the layers of the electrochromic element or device are disposed in the recited order from bottom to top. In some embodiments, the layers of the electrochromic device are contacting one another in that order from bottom to top. In some embodiments, the layers of the device are contacting one another in that order from top to bottom. Alternative arrangements of the layers of the electrochromic device are also contemplated. Electrodes
  • the electrochromic elements and devices described herein comprise an electrode on, or adjacent to, the top and the bottom of the various electrochromic element or device layers.
  • the electrodes (“electrodes,” “the electrodes,” or a similar phrase is used as shorthand herein for "first electrode and/or second electrode”) may be formed on a bonding layer and/or a substrate.
  • the electrodes may comprise a transparent material, e.g., glass or plastic, which may also be conductive. When one or more of the electrodes are transparent, light and energy can be efficiently transmitted to the inner layers of the element or device and may interact with the electrochromic materials and other layers within the element or device.
  • the electrochromic elements or devices comprise a first electrode layer and a second electrode layer.
  • the first electrode and the second electrode may be defined in their entirety by the electrode(s) found in these layers, or it is possible that the electrodes of these layers only partially define these layers.
  • the electrodes of these layers may be formed on a bonding layer and/or substrate.
  • the remainder of the electrode layers, wherein the electrodes only partially define these layers may be formed of a transparent material. In some examples, when one or more of the electrodes and layers are transparent, light can be efficiently taken in from the outside of layers to interact with the electrochromic material of the electrochromic element and enables optical modulation of the electrochromic material on emitted light.
  • the term "light” as used herein includes light in a wavelength region targeted by the electrochromic material.
  • the electrochromic material is used as a filter of an image pickup apparatus for a visible light region, light in the visible light region is targeted, and when the electrochromic material is used as a filter of an image pickup apparatus for an infrared region, light in the infrared region is targeted
  • the electrodes may comprise a transparent conductive oxide, dispersed carbon nanotubes on a transparent substrate, partly arranging metal wires on a transparent substrate, or combinations thereof.
  • the electrodes may be formed from a transparent conductive oxide material having good transmissivity and conductivity, such as tin-doped indium oxide (also called indium tin oxide, or ITO), zinc oxide, gallium-doped zinc oxide (GZO), indium zinc oxide (IZO), aluminum-doped zinc oxide (AZO), tin oxide, antimony-doped tin oxide (ATO), fluorine-doped tin oxide (FTO), niobium-doped titanium oxide (TNO), or a material containing Ag or Ag nanoparticles.
  • ITO indium tin oxide
  • GZO gallium-doped zinc oxide
  • IZO indium zinc oxide
  • AZO aluminum-doped zinc oxide
  • tin oxide antimony-doped tin oxide
  • FTO
  • the electrodes may be formed from a conductive polymer material, carbon nanotubes or graphene.
  • FTO may be selected for heat resistance, reduction resistance, and conductivity and ITO may be selected for conductivity and transparency.
  • the transparent conductive oxide if used, may have high heat resistance.
  • One or more of the electrodes may contain one of these materials, or one or more of the electrodes may have a multi-layer structure containing a plurality of these materials.
  • one or more of the electrodes may be formed from a reflective material such as a Group 10 or 11 metal, non-limiting examples of which include Au, Ag, and/or Pt. Forms in which the reflective material is a Group 13 metal, such as aluminum (Al) are also contemplated.
  • the first electrode is indium tin oxide.
  • the thickness of the first electrode is about 10 nm to about 300 nm, about 10-12 nm, about 12-14 nm, about 14-16 nm, about 16-18 nm, about 18-20 nm, about 20-22 nm, about 22-24 nm, about 24-26 nm, about 26-28 nm, about 28-30 nm, about 30-35 nm, about 35-40 nm, about 40-50 nm, about 50-60 nm, about 60-70 nm, about 70-80 nm, about 80-90 nm, about 90-100 nm, about 100-110 nm, about 110-120 nm, about 120-130 nm, about 130-140 nm, about 140-150 nm, about 150-160 nm, about 160-170 nm, about 170-180 nm, about 180-190 nm, about
  • the second electrode is indium tin oxide.
  • the thickness of the second electrode is about 10 nm to about 150 nm, about 10-12 nm, about 12-14 nm, about 14-16 nm, about 16-18 nm, about 18-20 nm, about 20-22 nm, about 22-24 nm, about 24-26 nm, about 26-28 nm, about 28-30 nm, about 30-35 nm, about 35-40 nm, about 40-50 nm, about 50-60 nm, about 60-70 nm, about 70-80 nm, about 80-90 nm, about 90-100 nm, about 100-110 nm, about 110-120 nm, about 120- 130 nm, about 130-140 nm, about 140-150 nm, about 15-25 nm, about 1-50 nm, about 50- 100 nm, about 100-150 nm, about 80 n
  • electrochromic elements or electrochromic devices comprising one or more electrochromic layers.
  • the electrochromic layers of the elements and devices described herein can comprise electrochromic materials containing charge sensitive materials.
  • the electrochromic layers of the electrochromic element or device comprise one or more optical properties that may change from a first state (clear or transparent) to a second state (colored or darkened) upon the application of an electric potential.
  • the electrochromic material of the first electrochromic layer can include p-type electrochromic materials.
  • the term "p-type electrochromic material” refers to a material in which its Fermi energy level (E /) is closer to the valence band energy level (E v ) than its conductance band energy level (E c ).
  • the electrochromic material of the second electrochromic layer can include n-type electrochromic materials.
  • the term “n-type electrochromic material” means the refers to a material in which its Fermi energy level (E/) is closer to the conductance band energy level (E c ) than its valence band energy level (E v ).
  • Table 1 illustrates some electrochromic materials' E c, E v, and E/. This table is only for illustrative purposes and in no way is intended to limit which electrochromic materials that can be used in the current element.
  • the first electrochromic layer may comprise p-type electrochromic materials, which may allow holes to be injected from the transparent conductive material of the first electrode layer (anode) into the p-type electrochromic material.
  • the injection of holes into the p-type electrochromic material significantly enhances the oxidation of the p-type electrochromic material causing a transformation from a first state (transparent) to a second state (darkened).
  • the p-type electrochromic materials can comprise anodic electrochromic materials.
  • anodic electrochromic material as used herein means a material that undergoes changes in optical properties by an oxidation reaction thereof in which electrons are removed from the material.
  • the first electrochromic layer can undergo a crystallization of the p-type electrochromic material under annealing conditions of at least 200 °C for at least 3 minutes.
  • the p-type electrochromic material crystalizes it forms a nanostructure or rough surface morphology.
  • the first electrochromic layer can perform a dual function and operate as both the electrochromic layer and as a buffer layer. When the first electrochromic layer operates in this dual capacity, the nanostructured or rough surface morphology can be transferred through the ultrathin layers of the element and imparted onto the surface of the second electrode layer.
  • Non-limiting examples of anodic electrochromic materials include nickel oxide (NiO), iridium(IV) oxide (IrC ⁇ ), chromium oxide (C ⁇ Os), manganese dioxide (MnCh), iron oxide (FeCh), and cobalt(ll) peroxide (C0O2).
  • the first electrochromic layer comprises nickel oxide.
  • the first electrochromic layer may have any suitable thickness, such as about 40-500 nm, about 40-50 nm, about 50-60 nm, about 60-70 nm, about 70-80 nm, about 80-90 nm, about 90-100 nm, about 100-110 nm, about 110-120 nm, about 120-130 nm, about 130-140 nm, about 140-150 nm, about 150-160 nm, about 160-170 nm, about 170-180 nm, about 180- 190 nm, about 190-200 nm, about 200-210 nm, about 210-220 nm, about 220-230 nm, about 230-240 nm, about 240-250 nm, about 250-260 nm, about 260-270 nm, about 270-280 nm, about 280-290 nm, about 290-
  • the ultrathin layers of the elements and devices described herein are sufficiently thin to allow the transfer of the nanostructured or rough surface morphology therethrough to affect the resultant surface morphology upon the second electrode layer, imparting a template of the nanostructured or rough surface morphology thereon.
  • the first electrochromic layer comprising the electrochromic material may be deposited or fixed to the first electrode layer.
  • the first electrochromic layer can be fixed to the insulating layer.
  • the first electrochromic layer including the electrochromic material may be disposed upon the first stratum of the insulating layer.
  • the electrochromic element comprises a second electrochromic layer.
  • the second electrochromic material can include n-type electrochromic materials as discussed above. N-type electrochromic materials allow electrons to be injected from the transparent conductive material of the second electrode layer (cathode). The injection of electrons into the n-type electrochromic material enhances the reduction of the n-type electrochromic material resulting in transformation of the material from a first optical state (transparent) to a second optical state (dark).
  • the n-type electrochromic materials can comprise cathodic materials.
  • cathodic electrochromic material means a material that undergoes changes in optical properties by a reduction reaction thereof in which electrons are given to the material.
  • cathodic electrochromic materials include tungsten oxide (WOB), titanium dioxide ( " PO2), niobium oxide (Nb 2 0s), molybdenum (VI) oxide (M0O3), tantalum(V) oxide (Ta 2 0s), and vanadium pentoxide (V2O5).
  • the second electrochromic layer comprises tungsten oxide.
  • the second electrochromic layer may have any suitable thickness, such as about 100-800 nm, about 100-110 nm, about 110-120 nm, about 120-130 nm, about 130-140 nm, about 140- 150 nm, about 150-160 nm, about 160-170 nm, about 170-180 nm, about 180-190 nm, about 190-200 nm, about 200-210 nm, about 210-220 nm, about 220-230 nm, about 230-240 nm, about 240-250 nm, about 250-260 nm, about 260-270 nm, about 270-280 nm, about 280-290 nm, about 290-300 nm, about 300-310 nm, about 310-320 nm, about 320-330 nm, about 330- 340 nm, about 340-350 nm
  • the second electrochromic layer comprising the electrochromic material may be fixed to the second electrode layer.
  • the second electrochromic layer can be deposited upon or fixed to the insulating layer.
  • the second electrochromic layer including the electrochromic material may be disposed upon the third stratum of the insulating layer.
  • Non-limiting methods of fixing the second electrochromic layer involve, for example, bonding the electrochromic material to the insulating layer through a functional group in a molecule of the electrochromic material, causing the insulating material to retain the electrochromic material in a comprehensive manner (e.g., in a film state) through the utilization of a force, such as an electrostatic interaction, or causing the electrochromic material to physically adsorb to the insulative material of the insulating layer.
  • a method involving chemically bonding a low-molecular weight organic compound serving as the electrochromic material to a porous insulative material through a functional group thereof, or a method involving forming a high-molecular weight compound serving as the electrochromic material on the insulative material may be used when a quick reaction of the electrochromic material is desired.
  • the former method may include fixing the low-molecular weight organic compound serving as the electrochromic material onto a fine particle oxide electrode, such as aluminum oxide, titanium oxide, zinc oxide, or tin oxide, through a functional group, such as an acid group (e.g., a phosphoric acid group or a carboxylic acid group).
  • the latter method is, for example, a method involving polymerizing and forming a viologen polymer on an insulative and/or tunneling dielectric material and may include electrolytic polymerization. Similar methods are contemplated for fixing the first electrochromic layer to the first electrode and/or to the insulating layer.
  • the electrochromic element can comprise an insulating layer.
  • the insulating layer can comprise a plurality of strata.
  • at least one of the strata can comprise a material with a band gap of at least 5 eV.
  • at least one of the layers can comprise a high dielectric constant material with a relative dielectric constant of at least 8.
  • the insulating layer can comprise 3 strata. Referring now to FIG. 2, the first stratum 113 and the third stratum 117 may comprise two opposing outer layers of insulating layer 116.
  • the first stratum can be in electrical communication with the p-type electrochromic material of the first electrochromic layer.
  • the second stratum 115 is sandwiched between the first and the third strata.
  • the third stratum can be in electrical communication with the n-type electrochromic material of the second electrochromic layer.
  • the first and the third stratum can comprise the same material.
  • the material of the first and the third stratum can comprise an oxide, a nitride, or a fluoride.
  • the material of the first and the third stratum can be a metal oxide compound, which may comprise aluminum oxide (AI2O3), a silicon dioxide (S1O2) hafnium oxide (HfC ⁇ ), zirconium oxide (ZrCh), and/or yttrium oxide (Y2O3).
  • the material of the first and the third stratum can comprise of a material with a band gap of at least 5 eV, e.g., 8.7 (AI2O3), 8.9 (S1O2), 5.6 (Y2O3), 25.8 (FlfC ) and/or 5.8 (ZrCh).
  • the material can comprise a material with a conductance band edge (E c ) minimum that is at least 2 eV higher than material's Fermi level (E/), e.g., 8.7 (AI2O3), 2.8 (Y2O3), and/or 2.5 (HfC ⁇ ), and/or 2.36 (ZrCh).
  • the first stratum comprises AI2O3.
  • the third stratum comprises AI2O3.
  • both the first stratum and third stratum comprise AI2O3.
  • the insulating layer comprises 3 strata, wherein: the first stratum and the third stratum comprise the same material with an E c of at least 2 eV, confining the electrons within the n-type electrochromic layer and the holes within the p-type electrochromic layer; and the second stratum with the large relative dielectric constant (high permittivity) operates as a check to confine any electrons or holes that leak out within the second stratum, resulting in the low T% (darker on state).
  • the first and the third strata may comprise AI 2 O 3.
  • the first and the third strata may comprise different materials.
  • FIG. 4 is an illustrative representation of an embodiment wherein the insulating layer comprises 3 strata, wherein the first stratum and the third stratum comprise different materials.
  • the material of the first stratum comprises an electrically insulating material with an E c that is at least 2 eV higher than the E/.
  • the material of the third stratum comprises an electrically insulating material with a with an E v of at least 2 eV below relative to the E/.
  • the material of the second stratum comprises a material with a large relative dielectric constant (high permittivity).
  • the insulating layer's first stratum can further comprise an electrically insulating material with a conductance band edge (E c ) that is at least 2 eV higher than the Fermi level (E /).
  • the first stratum may comprise a n-type electrochromic material.
  • the insulating layers third stratum can further comprise a material with a valence band edge (E v ) that is at least 2 eV lower than the Fermi level (E/).
  • the third stratum may comprise a p- type electrochromic material.
  • the second stratum can comprise a high dielectric constant material with a relative dielectric constant of at least 8, e.g., 9 (AI2O3), 15 (Y2O3), 25 (HfC ), 25 (ZrCh), and/or 80 titanium oxide (T1O2).
  • the second stratum may comprise T1O2 .
  • the insulating layer can reduce or prevent charge leakage between the first and second electrochromic layers. In some embodiments, the insulating layer can increase coloration efficiency. Further, the first electrode layer can also be electrically isolated or separated from the second electrochromic material by the insulating layer(s) which include electrically insulative material.
  • electrically insulative refers to the reduced transmissivity of the layerto electrons and/or holes. In one form, the electrical isolation or separation between these layers may result from increased resistivity within the insulating layer(s).
  • first electrode layer can be in electrical communication with first electrochromic layer which can be in electrical communication with the insulating layer(s) which can be in electrical communication with the second electrochromic layer which can be in electrical communication with second electrode layer.
  • insulating layer(s) may include one or more strata comprising electrically insulative materials, including inorganic and/or organic materials, which exhibit electrically insulative properties.
  • the electrically insulative properties of the insulating strata comes from the combination of materials with large "band gap” or “electrical gap” (the energy difference in electron volts (eV) between the top of the valence band edge and the bottom of the conductive band edge) and high dielectric constant which causes a synergistic effect of the materials yielding a high band gap with effective dielectric constant (e eff) compared to a single layer insulating layer.
  • band gap or "electrical gap”
  • eV electron volts
  • this blockage leads to an accumulation of electrons within the second electrochromic layer resulting higher darkness efficiency due to the increase in the reduction of the n-type electrochromic materials caused by the excess electrons. It is believed that by using a layered insulating layer with a large band gap combined with materials with high dielectric constants, electrons from the cathode are blocked from passing through the insulating layer, thus trapping the electrons within the second electrochromic layer where they localize and aid in the reduction of the n-type electrochromic material causing a change in the materials optics properties from one state (transparent) to a second state (dark).
  • the use of the insulative materials with a large band gap and high dielectric constant block the holes from entering the insulative material, resulting in an accumulation within the p-type electrochromic material aiding in the oxidation of the p-type first electrochromic layer causing a change in the materials optics properties from one state (transparent) to a second state (dark). It is further believed that the utilization of materials with high dielectric constant result in higher charge storage within the p-type and n-type electrochromic material. The increase in the stored charge leads to enhanced reduction of the n-type electrochromic material resulting in a darker second state and enhanced oxidation of the p-type electrochromic materials, also resulting in a darker state.
  • the higher charge storage results in a lower light transmittance. It is the cumulative effect of blocking both the holes and the electrons from passing into and through the insulating layer, thereby increasing the stored charge within the electrochromic materials, that allows for the use of ultrathin electrochromic insulating layers within the electrochromic element of the present disclosure. It is believed that by interposing the material of the second stratum (comprising a dielectric constant at least two (2) times larger than that of both of the first and the third strata, e.g. 15 (Y2O3), 25 (HfCh), 25 (ZrCh) and/or 80 (T1O2)), the effective dielectric constant ( eff) of the insulating layer is increased.
  • an insulating layer with a high e ff, a high conductance band edge (E c ) and a low valence band edge (E v ) improves the element's percentage of transmittance (%T) modulation (or the darkness of the element in the on/dark state) by the confinement of the electrons/holes within their respective electrochromic materials.
  • %T percentage of transmittance
  • ei the dielectric constant of the second stratum's material
  • 82 equals the dielectric constant of the first and third strata's
  • di is the thickness of the second stratum
  • d is equal to the total thickness.
  • the insulating layer can have any suitable total thickness, such as about 40 nm to about 300 nm, about 40-50 nm, about 50-60 nm, about 60-70 nm, about 70-80 nm, about 80- 90 nm, about 90-100 nm, about 100-110 nm, about 110-120 nm, about 120-130 nm, about 130-140 nm, about 140-150 nm, about 150-160 nm, about 160-170 nm, about 170-180 nm, about 180-190 nm, about 190-200 nm, about 200-210 nm, about 210-220 nm, about 220-230 nm, about 230-240 nm, about 240-250 nm, about 250-260 nm, about 260-270 nm, about 270- 280 nm, about 280-290 nm, about 290-300 nm, about 70-90 nm, about 90-110
  • the insulating layer may have a thickness which is less than, equal to, and/or greater than the thickness of the first electrochromic layer or the second electrochromic layer.
  • the insulating layer comprises materials and/or structures that are effective in confining, on a selective basis, electrons and/or holes within the adjacent electrochromic layers.
  • the insulating layer(s) may be effective for maintaining (in whole or in part) charges injected in the electrochromic materials of electrochromic layer(s) to be stored under a no bias condition; i.e., without continued application of an electric potential.
  • the individual strata e.g. the first insulating stratum, the second insulating stratum, and/or the third insulating stratum may have a thickness in the range of about 10 nm to about 150 nm, about 10-20 nm, about 20-30 nm, about 30-40 nm, about 40-50 nm, about 50-60 nm, about 60-70 nm, about 70-80 nm, about 80-90 nm, about 90-100 nm, about 100-110 nm, about 110-120 nm, about 120-130 nm, about 130-140 nm, about 140-150 nm, about 15-25 nm, about 25-35 nm, about 35-45 nm, about 45-55 nm, about 55-65 nm, about 65-75 nm, about 75-85 nm, about 10-25 nm, about 25-40 nm, about 40-
  • the total thickness of the insulating strata e.g. the total thickness of the first insulating stratum, the second insulating stratum, and the third insulating stratum together, is close to the first electrochromic layer.
  • the ratio of the insulating layer to the first electrochromic layer may be about 0.5-2, about 0.5-1, about 1-1.5, about 1.5-2, about 0.8- 1.2, about 1.2-1.3, about 1.3-1.5, or about 1.25.
  • the total thickness of the insulating strata e.g. the total thickness of the first insulating stratum, the second insulating stratum, and the third insulating stratum together, is less than that of the second electrochromic layer.
  • the ratio of the insulating layer to the first electrochromic layer may be about 0.1-0.8, about 0.1-0.3, about 0.3-0.5, about 0.5-0.8, about 0.4-0.6, about 0.45-0.55, or about 0.5.
  • the element can comprise a protection layer(s).
  • the protection layer(s) can comprise a polymer or other material to protect the device from moisture, oxidation, physical disfigurement, etc. Suitable protective layer(s) and or materials are described in the art and one skilled in the art would know what protective layer to utilize.
  • Some embodiments include a device for controlling light.
  • the device comprises an electrochromic element, as described above herein, wherein at least one optical property of the electrochromic materials of the element may be changed from a first state to a second state upon application of an electrical potential.
  • the device further comprises a power source.
  • a power source 134 is illustrated in FIG. 2, and the first electrode layer 112 and the second electrode layer 120 may be electrically coupled to or in electrical communication with the power source.
  • the power source provides an electrical potential to the system.
  • the power source may be used to selectively provide an electric potential such as a voltage pulse to the first electrode and/or the second electrode to effect desired passage of electrons and/or holes to or from the electrochromic material of electrochromic layers.
  • an electric potential such as a voltage pulse
  • the electrochromic elements and devices described herein could be used for a number of different purposes and applications.
  • the electrochromic elements and devices herein could be used in a window member that includes a pair of transparent substrates with the electrochromic elements and devices described herein positioned between said transparent substrates. Owing to the presence of the electrochromic element or device of the present disclosure, the window member can adjust the quantity of light transmitted through the window member bearing the transparent substrates.
  • the window member can include a frame which supports the electrochromic element or device of the present disclosure, and the window member can be used, for example, in an aircraft, an automobile, a house, or the like, just to provide a few possibilities.
  • the window member comprising the electrochromic element or device can affect a difference in the transmission of light therethrough of at least 10%, at least 20%, at least 30%, at least 40%, at least 45%, at least 50%, at least 55%, at least 60%, at least 65%, at least 70%, at least 75%, at least 80%, at least
  • activation of or turning on the electrochromic materials of the first electrochromic layer and the second electrochromic layer involves injecting holes into the first electrochromic layer while electrons are injected into the second electrochromic layer as the second electrode is held at a ground potential and a positive voltage is applied to the first electrode.
  • the positive voltage (Vpp) may be from about 1 to about 5 volts, at least 12 volts when the positive read or operating voltage, Vdd, is about 5 volts, and from about 20 volts to about 25 volts, although other variations are contemplated.
  • the second electrode can be held at a ground potential, and a negative voltage is applied to the first electrode.
  • the first electrode can be held at a ground potential and a positive voltage is applied to the second electrode.
  • the negative voltage (Vpp) may be, for example at least -1 volt, -2 volts, -4 volts, -5 volts, up to -12 volts (e.g., when the negative read or operating voltage (Vdd) is about -2 volts), or from about -20 volts to about -25 volts.
  • a ground potential generally refers to a virtual ground potential or a voltage level of about 0 volts.
  • a voltage pulse may be applied by the power source to the first electrode and the second electrode. Since the device is insulated under normal operation, the applied voltage pulse is only needed for switching states of the first electrochromic material of the first electrochromic layer and second electrochromic material of the second electrochromic layer. Further, as indicated above, electron and/or hole conduction may only occur upon application of a critical voltage pulse necessary to push electrons and/or holes into orout of the electrochromic material of the electrochromic layers. Moreover, given that the device is insulated under normal operation and the electrochromic material of the electrochromic layers is insulated from the electrodes and/or holes, the leakage of charges into or out of the electrochromic material is reduced, minimized, or eliminated.
  • the insulative effect of the insulating layer(s) of the present disclosure may provide a wide band gap insulating effect that can reduce, minimize and/or eliminate the issue of leakage suffered in other conventional forms of electrochromic devices.
  • the insulative properties of the devices described herein allow the voltage applied from the power supply to the electrochromic material of the electrochromic layers to be uniformly applied without potential drop to the electrode since the resistance of the device is much larger than the resistance of the electrode.
  • Conventional electrochromic devices may generally be highly conductive and in applications for a larger area such as a window, the conventional device has a much lower resistance and their electrode layer's resistance can be comparable to or less than their device's resistance.
  • the devices described herein may be effective for minimizing, reducing or eliminating the occurrence of this issue.
  • the electrochromic material of the electrochromic layer can trap both electrons and holes.
  • the large band gap of the insulating layer may cause electron injection from the cathode electrode into the electrochromic material of second electrochromic layer, and hole injection from the anode into the first electrochromic layer.
  • the charges will be stored in the respective electrochromic layers due to the insulative effect of the insulating layer(s).
  • the stored charges in the electrochromic material of electrochromic layers may cause a color change or a change in transmission/absorption. For example, it may cause a change from a first state that is clear to a second high absorption-state that is darkened.
  • Deactivation of or turning off the electrochromic material of first and the second electrochromic layers involves the inverse of the activation/turning on procedure. For example, if the electrochromic material of the second electrochromic layer is activated/turned on by supplying a positive voltage to the first electrode, the deactivation/turning off operation involves supplying a negative voltage of about the same magnitude to the second electrode while the source electrode is held at a ground potential. Alternatively, if the electrochromic material of electrochromic layer is activated by supplying a negative voltage to the second electrode, the deactivation/turning off operation involves supplying a positive voltage of about the same magnitude to the first electrode while the source electrode is held at a ground potential.
  • Some embodiments include a method for preparing an electrochromic element or electrochromic device.
  • the method can comprise providing: a first electrode layer comprising a transparent conductive material; a first electrochromic layer wherein the first electrochromic layer may comprise a p-type electrochromic material deposited upon and in electrical communication with the first electrode layer; an insulating layer, wherein the insulating layer comprises 3 strata, the first stratum being disposed upon and in electrical communication with the first electrochromic layer, the second stratum being disposed upon and in electrical communication with the first stratum, and the third stratum being disposed upon and in electrical communication with the second stratum; a second electrochromic layer comprising an n-type electrochromic material deposited upon and in electrical communication with the third stratum of the insulating layer; and a second electrode layer comprising a transparent conductive material, which may comprise a nanostructured surface morphology, disposed upon and in electrical communication with the second electrochromic layer.
  • the method may also include a p-type electrochromic material of the first electrochromic layer further comprising a nanostructured surface morphology.
  • the method for preparing an electrochromic device may further comprise electrically connecting the transparent conductive material of the first electrode layer and the transparent conductive material of the second electrode layer to a power source, wherein the first electrode layer and the second electrode layer are in electrical communication.
  • Some embodiments of the preparation method further comprise encapsulating the device with an optically transparent encapsulation material.
  • the optically transparent encapsulating material can be oxygen limiting or preventing, not allowing or greatly reducing the exposure to atmospheric oxygen.
  • the choice of encapsulating material is not limiting, and one skilled in the art of electrochromic devices could choose which encapsulating material to use.
  • Embodiment 1 An electrochromic element comprising:
  • a first electrochromic layer A first electrochromic layer
  • Embodiment 2 The electrochromic element of embodiment 1 wherein the insulating layer comprises 3 strata.
  • Embodiment 3 The electrochromic element of embodiment 2, wherein the first and the third stratums comprise two opposing outer stratums comprising the material with a band gap of at least 5 eV.
  • Embodiment 4 The electrochromic element of embodiment 2, wherein the second stratum is intermediate of the two opposing outer stratum and comprises a high dielectric constant material with a relative dielectric constant of at least 8.
  • Embodiment 5 The electrochromic element of embodiment 2, wherein the first stratum is in electrical communication with the p-type electrochromic material of the first electrochromic layer.
  • Embodiment 6 The electrochromic element of embodiment 2, wherein the first stratum further comprises an electrically insulating material with a valence band edge of at least 2 eV above, relative to the materials Fermi level.
  • Embodiment 7 The electrochromic element of embodiment 2, wherein the first stratum is further comprising a n-type electrochromic material.
  • Embodiment 8 The electrochromic element of embodiment 2, wherein the third stratum is in electrical communication with the n-type electrochromic material of the second electrochromic layer.
  • Embodiment 9 The electrochromic element of embodiment 2, wherein the third stratum further comprises a material with a conductance-band edge of at least 2 eV below, relative to the materials Fermi level.
  • Embodiment 10 The electrochromic element of embodiment 2, wherein the third stratum is further comprising a p-type electrochromic material.
  • Embodiment 11 The electrochromic element of embodiment 3, wherein the second stratum of the insulating layer is further comprising a material with a dielectric constant as least 2 times larger than the dielectric constant of the first and third insulating layers' material.
  • Embodiment 12 The electrochromic element of embodiment 2, wherein the material of the two outer strata comprises an oxide, a nitride or a fluoride compound.
  • Embodiment 13 The electrochromic element of embodiment 2, wherein the material of the two outer strata is a metal oxide compound.
  • Embodiment 14 The electrochromic element of embodiment 13, wherein the metal oxide compound is aluminum oxide, silicon dioxide, hafnium oxide, zirconium oxide and/or yttrium oxide.
  • Embodiment 15 The electrochromic element of embodiment 14, wherein the metal oxide compound is aluminum oxide.
  • Embodiment 16 The electrochromic element of embodiment 1, wherein the p-type electrochromic material comprises an anodic material.
  • Embodiment 17 The electrochromic element of embodiment 1, wherein the n-type electrochromic materials is a cathodic material.
  • Embodiment 18 The electrochromic element of embodiment 1, wherein the transparent conductive material comprises a metal oxide.
  • Embodiment 19 The electrochromic element of embodiment 18, wherein the metal oxide is indium tin oxide (ITO).
  • Embodiment 20 The electrochromic element of embodiment 1, wherein the element further comprises a power source, wherein the power source is in electrical communication with the first electrode layer and the second electrode layer.
  • Embodiment 21 A system, comprising an electrochromic element of embodiments 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, or 19, wherein at least one optical property of the electrochromic materials may be changed from a first state to a second state upon application of an electric potential.
  • Embodiment 22 The system of embodiment 21, further comprising a power source in electrical communication with the first and the second electrode layers to provide an electric potential to the system.
  • Embodiment 23 A method for preparing an electrochromic device comprising the steps of: a) providing a first electrode layer, wherein the first electrode comprises a transparent conductive material; b). providing a first electrochromic layer, wherein the first electrochromic layer comprises a p-type electrochromic material disposed upon and in electrical communication with the first electrode layer; c).
  • an insulating layer comprising 3-strata, wherein a first stratum is disposed upon and in electrical communication with the p-type electrochromic material of the first electrochromic layer; a second stratum is disposed upon and in electrical communication with the first stratum; a third stratum is disposed upon and in electrical communication with second stratum d).
  • providing a second electrochromic layer wherein the second electrochromic layer comprises a n-type electrochromic material disposed upon and in electrical communication with the third stratum of the insulating layer; and e).
  • providing a second electrode layer wherein the second electrode layer comprises a transparent conductive material comprising a nanostructured surface morphology is disposed upon and in electrical communication with the second electrochromic layer.
  • Embodiment 24 The method of embodiment 23, wherein the p-type electrochromic material of the first electrochromic layer can further comprise a nanostructured surface morphology.
  • Embodiment 25 The method of embodiment 23, further comprising electrically connecting the transparent conductive material of the first electrode layer and the transparent conductive material of the second electrode layer to a power source, wherein the first electrode layer and the second electrode layer are in electrical communication
  • a pre-learned patterned ITO-glass substrate was loaded onto a hybrid sputtering/thermal vacuum deposition chamber (Angstrom Engineering, Inc.) set at 2 x 10 7 torr.
  • a hybrid sputtering/thermal vacuum deposition chamber Angstrom Engineering, Inc.
  • 80 mm of nickel oxide (NiO) was deposited under vacuum of 2X 10 7 torr, from a Ni target under a processing gas of argon (Ar) and oxygen (O 2 ), where the O 2 concentration was set at 30% with a deposition rate of 2 A/s.
  • an aluminum oxide (AI 2 O 3, 100 mm) insulation layer was deposited under vacuum of 2 x 10 7 torr, where the O 2 concentration was set at 15% with a deposition rate of 3 A/s.
  • tungsten oxide (WO 3 , 200 mm) n-type, electrochromic layer was deposited under vacuum of 2X 10 7 torr, from a tungsten target under a working gas of ArC> 2 , where O 2 concentration was set at 35% with a deposition rate of 3 A/s.
  • the second (ITO) electrode layer (cathode) was deposited at a deposition rate of 1.5 A/s. Electrical connections were connected between a power source (Tektronix, Inc., Beaverton, OR, USA, Kethley 2400 source meter) and switched electrical connections with the electrode layers to enable selective application of electrical potentials to the first electrode (on) or the second electrode (off).
  • CE-1 device was made in a manner similar to that described above with respect to the device of Example CE-2, except as indicated in TABLE 2 below.
  • a pre-learned patterned ITO-glass substrate (first electrode layer/anode) was loaded onto a hybrid sputtering/thermal vacuum deposition chamber (Angstrom Engineering, Inc.) set at 1 x 10 6 torr.
  • a p-type, electrochromic layer comprising nickel oxide (NiO, 80 nm) was deposited under a chamber pressure of 12 mtorr, from a Ni target under a 30% concentration of a processing gas mixture comprising argon (Ar) and oxygen (O2) where the Arflow rate was 10 seem and the 02 flow rate was 2 seem, with a deposition rate of 2 A/s.
  • the first stratum of the insulating layer comprising AI2O3 (30 nm) was deposited under vacuum of 5 mtorr, from the Al target under a 15% concentration of a processing gas mixture comprising Ar and O2 where the Ar flow rate was 15 seem and the O2 flow rate was 3 seem, with a deposition rate was 1.5 A/s.
  • the second stratum of the insulating layer comprising titanium oxide (T1O2, 40 nm) was deposited under vacuum of 8 mtorr, from the Ti target under a 15% concentration of a processing gas mixture comprising argon (Ar) and oxygen (O2) where the Ar flow rate was 10 seem and the O2 flow rate was 8 seem, with a deposition rate of 1.4 A/s.
  • the third stratum of the insulating layer comprising AI2O3 (30 nm) was deposited under vacuum of 5 mtorr, from the Al target under a 15% concentration of a processing gas mixture comprising Ar and O2 where the Ar flow rate was 15 seem and the O2 flow rate was 3 seem, with a deposition rate was 1.5 A/s.
  • the n-type electrochromic layer comprising tungsten oxide (WO3, 200 nm) was deposited under chamber pressure of 13 mtorr, from a W target under a working gas of Ar and O2, where O2 concentration was set at 30% concentration of a processing gas mixture comprising argon (Ar) and oxygen (O2) where the Arflow rate was 15 seem and the Onflow rate was 10 seem, with a deposition rate of 2 A/s.
  • the second electrode layer (cathode) comprising ITO was deposited under a chamber pressure of 3 mtorr, under a processing gas of Ar with a flow rate of 15 seem, and a deposition rate of 1.2 A/s.
  • Electrodes were connected between a power source (Tektronix, Inc., Beaverton, OR, USA, Kethley 2400 source meter) and switched electrical connections with the electrodes to enable selective application of potential to the first electrode (on) or to the bottom or second electrode (off).
  • a power source Tektronix, Inc., Beaverton, OR, USA, Kethley 2400 source meter
  • FIGS. 6-8 show the total light transmittance spectrum of the ON state and OFF state of embodiments tested, e.g., Samples CE-1, CE-2, and EC-1.
  • Example CE-1 device as described herein was positioned onto a Filmetrics F10-RT- YV reflectometer (Filmetrics, San Diego, CA, USA), and the total transmission therethrough (%T) for ON state and OFF state was determined over varying wavelengths of light. The results are shown in Fig. 5. At about 630 nm, total transmission (%T) was about 83.6% at 630 nm in the On-state, and about 75% at 630 nm in the Off-state.
  • the %T ON state and OFF state for devices with CE-1, CE-2, and EC-1, layer are shown in FIGS. 5, 6, and 7 respectively. At 630 nm, they showed a difference between on and off state %T, at 630 nm of 1.1% (FIG. 5, CE-1); of 48.9% (FIG. 6, CE-2); of 57.7 % (FIG. 7, EC-1). As shown, the embodiments of an p-type EC material, insulating layer and n-type EC material alone (FIG.
  • This disclosure may sometimes illustrate different components contained within, or connected with, different other components. Such depicted architectures are merely examples, and many other architectures can be implemented which achieve the same or similar functionality.
  • any disjunctive word and/or phrase presenting two or more alternative terms should be understood to contemplate the possibilities of including one of the terms, either of the terms, or both terms.
  • the phrase “A or B” will be understood to include the possibilities of "A” or “B” or “A and B.”
  • the terms and words used are not limited to the Bibliographical meanings but are merely used to enable a clear and consistent understanding of the disclosure. It is to be understood that the singular forms “a,” “an,” and “the” include plural referents unless the context clearly dictates otherwise. Thus, for example, reference to “a component surface” includes reference to one or more of such surfaces.

Abstract

La présente invention se rapporte à des éléments électrochromiques (110) comprenant une couche isolante multicouche (116) et au moins un matériau électrochromique (114 ; 118) présentant une ou plusieurs propriétés optiques qui peuvent être modifiées lors de l'application d'un potentiel électrique. La fourniture d'un potentiel électrique au-dessus d'un seuil conduit à un changement d'une ou de plusieurs propriétés optiques du matériau électrochromique (114 ; 118). Un potentiel électrique opposé peut être fourni pour inverser le changement apporté à une ou plusieurs desdites propriétés optiques.
PCT/US2020/054223 2019-10-03 2020-10-05 Dispositif électrochromique ultramince à couche isolante multicouche pour modulation optique élevée WO2021067918A1 (fr)

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US5189503A (en) * 1988-03-04 1993-02-23 Kabushiki Kaisha Toshiba High dielectric capacitor having low current leakage
US20110135837A1 (en) * 2005-10-11 2011-06-09 Mark Samuel Burdis Electrochromic devices having improved ion conducting layers
US8169136B2 (en) 2008-02-21 2012-05-01 Nitto Denko Corporation Light emitting device with translucent ceramic plate
US20140205746A1 (en) * 2013-01-21 2014-07-24 Kinestral Technologies, Inc. Process for preparing a multi-layer electrochromic structure

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Publication number Priority date Publication date Assignee Title
US5189503A (en) * 1988-03-04 1993-02-23 Kabushiki Kaisha Toshiba High dielectric capacitor having low current leakage
US20110135837A1 (en) * 2005-10-11 2011-06-09 Mark Samuel Burdis Electrochromic devices having improved ion conducting layers
US8169136B2 (en) 2008-02-21 2012-05-01 Nitto Denko Corporation Light emitting device with translucent ceramic plate
US20140205746A1 (en) * 2013-01-21 2014-07-24 Kinestral Technologies, Inc. Process for preparing a multi-layer electrochromic structure

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