WO2021065459A1 - High-frequency shield structure - Google Patents

High-frequency shield structure Download PDF

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Publication number
WO2021065459A1
WO2021065459A1 PCT/JP2020/034847 JP2020034847W WO2021065459A1 WO 2021065459 A1 WO2021065459 A1 WO 2021065459A1 JP 2020034847 W JP2020034847 W JP 2020034847W WO 2021065459 A1 WO2021065459 A1 WO 2021065459A1
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WO
WIPO (PCT)
Prior art keywords
shield structure
connector
frequency shield
folded
high frequency
Prior art date
Application number
PCT/JP2020/034847
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French (fr)
Japanese (ja)
Inventor
森本　康夫
健 茂木
翔 熊谷
稔貴 佐山
祐輔 佐藤
加賀谷　修
Original Assignee
Ａｇｃ株式会社
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Filing date
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Application filed by Ａｇｃ株式会社 filed Critical Ａｇｃ株式会社
Publication of WO2021065459A1 publication Critical patent/WO2021065459A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00—Screening of apparatus or components against electric or magnetic fields

Definitions

  • the present invention relates to a high frequency shield structure that shields the connector terminal of a coaxial connector connected to a substrate at a high frequency.
  • Patent Document 1 discloses a shield structure of a connector terminal which is a signal line conductor of a connector connected to a substrate.
  • the connector terminals exposed from the substrate are covered with FPC (Flexible Printed Circuits) which is a shielding material, and the contact portion of the FPC with the substrate is soldered. This eliminates the need for screw holes, screws, washers, and nuts to attach the FPC to the board, which saves space and is easy to install.
  • FPC Flexible Printed Circuits
  • Patent Document 1 since an additional component such as FPC is required to shield the connector terminal, there is room for improvement in providing a shield structure while further simplifying the structure. There is.
  • the present disclosure provides a high-frequency shield structure capable of realizing a shield of a connector terminal with a simple configuration.
  • the present disclosure includes a flexible substrate and a coaxial connector connected to the flexible substrate.
  • the flexible substrate is provided with a connector terminal which is a signal line conductor of the coaxial connector as well as being connected to the coaxial connector.
  • the connector connection part which is the board area
  • a folded portion which is a board area in which the end portion of the flexible substrate is folded back toward the connector connecting portion side so as to cover the connector terminal, and a ground conductor provided at the connector connecting portion and the folded portion and covering the connector terminal.
  • a high-frequency shield structure including a ground conductor provided on the connector connecting portion side and a ground conductor for electrically connecting the grounding conductor covering the folded-back portion side.
  • FIG. 3 is a plan view of the high frequency shield structure of FIG. 3 in the XZ plane. It is sectional drawing of the high frequency shield structure which concerns on embodiment of this invention.
  • FIG. 5 is a plan view of the high frequency shield structure shown in FIG. 5 in an XZ plane.
  • FIG. 7 is a view of the high frequency shield structure shown in FIG. 7 in a plan view on an XZ plane. It is sectional drawing of the 4th modification of the high frequency shield structure which concerns on embodiment of this invention.
  • 9 is a view of the high frequency shield structure shown in FIG. 9 in a plan view on an XZ plane. It is sectional drawing of the 5th modification of the high frequency shield structure which concerns on embodiment of this invention. It is a figure which looked at the 6th modification of the high frequency shield structure which concerns on embodiment of this invention in the XZ plane. It is a perspective view of the flexible substrate which concerns on 6th modification.
  • FIG. 15A It is a figure which shows an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 15A. It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of FIG. 15A. It is a figure which shows an example of the simulation result of the antenna gain when the high frequency shield structure of FIG. 15A is used. It is a perspective view of the model for demonstrating the 2nd effect by the high frequency shield structure which concerns on embodiment of this invention. It is a figure which shows an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 16A. It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of FIG. 16A.
  • FIG. 17A is a plan view of the high frequency shield structure of FIG. 17A in the XY plane. It is a figure which shows an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 17A. It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of FIG. 17A. It is a figure which shows an example of the simulation result of the antenna gain when the high frequency shield structure of FIG. 17A is used.
  • FIG. 18A is a plan view of the high frequency shield structure of FIG. 18A in the XY plane. It is a figure which shows an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 18A. It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of FIG. 18A. It is a figure which shows an example of the simulation result of the antenna gain when the high frequency shield structure of FIG. 18A is used.
  • the X-axis direction, the Y-axis direction, and the Z-axis direction represent a direction parallel to the X-axis, a direction parallel to the Y-axis, and a direction parallel to the Z-axis, respectively.
  • the X-axis direction, the Y-axis direction, and the Z-axis direction are orthogonal to each other.
  • the XY plane, YZ plane, and ZX plane are a virtual plane parallel to the X-axis direction and the Y-axis direction, a virtual plane parallel to the Y-axis direction and the Z-axis direction, and a virtual plane parallel to the Z-axis direction and the X-axis direction, respectively.
  • the direction indicated by the arrow is the plus X-axis direction
  • the direction opposite to the direction is the minus X-axis direction
  • the direction indicated by the arrow is the plus Y-axis direction
  • the direction opposite to the direction is the minus Y-axis direction.
  • the direction indicated by the arrow is the plus Z-axis direction
  • the direction opposite to the direction is the minus Z-axis direction.
  • the same or similar parts are designated by the same or similar reference numerals.
  • the drawings are schematic, and the relationship between the thickness and the plane dimension, the ratio of the thickness of each layer, etc. are different from the actual ones. Therefore, there are parts in which the relations and ratios of the dimensions of the drawings are different from each other.
  • the embodiments shown below exemplify a structure for embodying the technical idea of the present invention, and the technical idea of the present invention includes the material, shape, structure, arrangement, etc. of the component parts. Is not specified as the following.
  • the technical idea of the present invention may be modified in various ways within the technical scope specified by the claims stated in the claims.
  • FIG. 1 is a cross-sectional view of a high frequency shield structure according to an embodiment of the present invention.
  • FIG. 2A is a plan view of the high frequency shield structure of FIG. 1 in the XZ plane.
  • FIG. 2B is a diagram for explaining the state of the flexible substrate before and after the bent portion is formed.
  • FIG. 2C is a perspective view of the flexible substrate after the bent portion shown in FIG. 2B is formed.
  • the high frequency shield structure 100 includes a flexible substrate 1 and a coaxial connector 7 connected to the flexible substrate 1.
  • the flexible substrate 1 includes a connector connecting portion 11, a folded-back portion 12, a ground conductor 2, and a ground conductor 9 for conduction.
  • the flexible substrate 1 is a substrate that has flexibility that allows it to be bent, can be repeatedly deformed with a weak force, and has the property of maintaining its electrical characteristics even when deformed.
  • the flexible substrate 1 is thinner than a general rigid substrate (total thickness 300 ⁇ m to 1,600 ⁇ m) and has excellent workability, so that it is possible to process a complicated shape.
  • the flexible substrate 1 has a structure in which, for example, a ground conductor 2 (for example, a conductor foil) having a thickness of 12 ⁇ m to 300 ⁇ m is bonded to a thin-film dielectric 1a having a thickness of 12 ⁇ m to 300 ⁇ m.
  • the dielectric 1a a material called solder resist (resist / photoresist) or coverlay (Coverlay), polyimide, polyester, or the like is used.
  • As the material of the conductor foil for example, gold, silver, copper, aluminum, platinum, chromium and the like are used.
  • the dielectric 1a preferably has a dielectric loss tangent (so-called tan ⁇ ) of 0.01 or less, particularly 0.01 or less, at, for example, 28 GHz.
  • the dielectric loss tangent at 28 GHz is an example of an index at a frequency in the GHz band.
  • the signal line conductor 4 is a conductive signal line connected to an antenna element (not shown), and is provided, for example, on the end face of the connector connecting portion 11 of the flexible substrate 1 in the plus Y-axis direction. As shown in FIG. 2A, a through hole 4a1 communicating with the through hole 11d of FIG. 1 is provided at the end portion 4a of the signal line conductor 4 in the minus Z-axis direction.
  • the through hole 11d is a hole formed in the connector connecting portion 11 and penetrating the connector connecting portion 11 in the Y-axis direction.
  • the antenna element is provided, for example, on the plus Z axis direction side of the signal line conductor 4 in FIG. 2A.
  • the antenna element is suitable for transmitting and receiving radio waves in a high frequency band (for example, over 1 GHz to 300 GHz) such as microwaves and millimeter waves.
  • the antenna element can be applied to, for example, a V2X communication system, a 5th generation mobile communication system (so-called 5G), an in-vehicle radar system, and the like, but the applicable system is not limited to these.
  • ITS Intelligent Transport Systems
  • 5 G 28 GHz band, 3.6 to 6 GHz band, 39 GHz band
  • Wi-Fi 2.4 GHz, It may be for 5 GHz).
  • the connector connection portion 11 is a board area to which the coaxial connector 7 is connected in the entire flexible board 1.
  • the main body 7c of the coaxial connector 7 is provided on the end surface side of the connector connection portion 11 in the minus Y-axis direction.
  • the connector terminal 7a extends from the main body 7c of the coaxial connector 7 in the plus Y-axis direction.
  • the connector terminal 7a is a signal line conductor for transmitting a high frequency signal.
  • the connector terminal 7a is inserted into the through hole 11d formed in the connector connection portion 11, and further inserted into the through hole 4a1 formed in the end portion 4a of the signal line conductor 4.
  • the folded-back portion 12 is formed by folding back the region 13 side of the end portion 13 (the region shown by the broken line) of the flexible substrate 1 developed in a plate shape in the direction of the arrow A. That is, the folded-back portion 12 is formed by folding back the region on the end portion 13 side of the flexible substrate 1 toward the connector connecting portion 11 side so as to cover the connector terminal 7a.
  • the end face 12a of the folded-back portion 12 in the minus Y-axis direction faces the end face 11a of the connector connecting portion 11 in the plus Y-axis direction in the Y-axis direction. Then, the tip portion of the folded-back portion 12 in the minus X-axis direction (corresponding to the end portion 13 of the flexible substrate 1) comes into contact with the connector connecting portion 11, so that a package is formed. A space 8 is formed inside the package formed by the connector connecting portion 11 and the folded portion 12.
  • the ground conductor 2 is a ground conductor provided at the connector connecting portion 11 and the folded portion 12 and covering the connector terminal 7a.
  • the ground conductor 2 is provided so as to cover the outside of the envelope when the connector connecting portion 11 and the folded portion 12 are viewed in a plan view on an XY plane.
  • the grounding conductor 2 may be a conductor pattern formed on the flexible substrate 1, or may be a conductor sheet, a conductor substrate, or the like which is manufactured in advance separately from the flexible substrate 1 and then arranged on the flexible substrate 1.
  • the thickness of the ground conductor 2 is preferably 0.09 ⁇ m or more, more preferably 0.35 ⁇ m or more.
  • the thickness of the ground conductor 2 is preferably 110 ⁇ m or less.
  • the ground conductor 9 is a conductor for ground, and is provided at the connector connecting portion 11 and the folded portion 12 which are in contact with each other.
  • the ground conductor 9 is preferably a solid or hollow columnar conductor that electrically connects the ground conductor 2 on the connector connecting portion 11 side and the ground conductor 2 on the folded portion 12 side.
  • a closed-loop ground is formed by the ground conductor 9 extending from the ground conductor 2 on the connector connection portion 11 side toward the ground conductor 2 on the folded-back portion 12 side, and the ground conductor 2.
  • the length L shown in FIG. 1 corresponds to the maximum dimension inside the ground conductor 2 covering the envelope.
  • the length L is set to a value of 1/2 wavelength or less of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed.
  • the tip of the connector terminal 7a protrudes into the space 8 through the through hole 4a1 of the signal line conductor 4.
  • the connector terminal 7a is electrically connected to the signal line conductor 4.
  • the connector terminal 7a is arranged in a region where the end surface 12a of the folded-back portion 12 and the end surface 11a of the connector connecting portion 11 face each other.
  • the folded-back portion 12 extends from the virtual line VL extending the connector terminal 7a in the Y-axis direction to the plus X-axis direction. It covers up to a certain distance (for example, several mm to several tens of mm) in the minus X-axis direction, and also a certain distance (for example, several mm to several tens) in the plus Z-axis direction and minus Z-axis direction from the virtual line VL. mm) Arranged so as to cover up to a distant position.
  • a certain distance for example, several mm to several tens of mm
  • a certain distance for example, several mm to several tens
  • the shortest distance from the end surface 12a of the folded-back portion 12 to the end surface 11a of the connector connecting portion 11 is, for example, preferably 1 mm or less, more preferably 500 um or less.
  • the direction of the open portion of the connector terminal 7a is the direction of the radiation pattern of the antenna connected to the tip of the open portion of the connector terminal 7a, that is, the direction in which the connector terminal 7a extends is the direction of the main lobe of the antenna. In the same case, it is unlikely to affect the important radiation pattern of this antenna.
  • the radiation pattern is the range used in communication and radar.
  • the connector terminal 7a is electrically connected to an RF module (not shown) via a cable 7b provided in the main body 7c.
  • An RF module is a component on which a device with various functions is mounted. Generally, an amplifier, a phase controller, a mixer, a signal source, a filter, a switch, a circulator, and an AD / DA (Analog to Digital / Digital to Analog) converter. , Etc. are mounted, and the input / output interface is provided with an RF connector and a power / control connector.
  • a shield structure covering the connector terminal 7a can be configured by bending one flexible substrate 1.
  • a component for example, a rectangular shield member
  • the structure is simplified and a highly reliable high frequency shield structure 100 can be obtained.
  • a quadrangular shielding member it is necessary to fix the four sides of the shielding member, whereas in the present invention, one side of the flexible substrate 1, that is, the end portion of the flexible substrate 1.
  • the high frequency shield structure 100 can be obtained only by fixing the 13 to the connector connection portion 11, the amount of work involved in fixing is reduced, the man-hours for assembling the high frequency shield structure 100 are reduced, and the high frequency shield structure 100 is manufactured at low cost. it can.
  • the shield structure covering the connector terminal 7a reduces unnecessary radiation, and the influence of noise on the equipment provided around the high frequency shield structure 100 can be reduced. Further, even when the device existing around the high-frequency shield structure 100 exists near the high-frequency shield structure 100, the connector terminal 7a is covered with the folded-back portion 12, so that it becomes difficult for the connector terminal 7a and the device to be capacitively coupled. , The influence on the antenna characteristics can be reduced.
  • FIG. 3 is a cross-sectional view of a first modification of the high frequency shield structure according to the embodiment of the present invention.
  • FIG. 4 is a plan view of the high frequency shield structure of FIG. 3 in the XZ plane.
  • the description of the same configuration and effect as the high frequency shield structure 100 will be omitted or simplified by referring to the above description.
  • the high-frequency shield structure 100A of the first modification includes a coaxial connector 7A instead of the coaxial connector 7.
  • the coaxial connector 7A is arranged in the space 8 inside the package formed by the connector connecting portion 11 and the folded portion 12.
  • the coaxial connector 7A is installed, for example, on the end surface 11a side of the connector connection portion 11 in the plus Y-axis direction, and is electrically connected to the ground conductor 10.
  • the ground conductor 10 is a conductor for grounding the coaxial connector 7A.
  • the ground conductor 10 includes a planar terminal 10b and a plurality of columnar terminals 10a provided in the connector connecting portion 11.
  • the planar terminal 10b is provided on the end surface 11a of the connector connection portion 11 in the plus Y-axis direction so as to cover the periphery of the end portion of the connector terminal 7a.
  • a coaxial connector 7A is installed on the surface of the planar terminal 10b in the positive Y-axis direction.
  • the surface of the planar terminal 10b in the minus Y-axis direction is connected to one end of the columnar terminal 10a.
  • the columnar terminal 10a extends from the planar terminal 10b toward the ground conductor 2 in the minus Y-axis direction of the connector connecting portion 11, and the other end of the columnar terminal 10a is connected to the ground conductor 2.
  • the coaxial connector 7A is electrically connected to the ground conductor 2.
  • the cable 7b of the coaxial connector 7A is drawn out of the space 8 from, for example, an opening formed in the minus Z-axis direction of the space 8.
  • the coaxial connector 7A exists on the minus Y-axis direction side of the connector connecting portion 11.
  • the overall size of the high-frequency shield structure 100A can be reduced by the amount that does not occur. Therefore, the degree of freedom in installing the high-frequency shield structure 100A is increased, and the antenna provided with the high-frequency shield structure 100A can be miniaturized.
  • FIG. 5 is a cross-sectional view of a second modification of the high frequency shield structure according to the embodiment of the present invention.
  • FIG. 6 is a plan view of the high frequency shield structure shown in FIG. 5 in the XZ plane.
  • the description of the same configuration and effect as the high frequency shield structure 100 will be omitted or simplified by referring to the above description.
  • the high frequency shield structure 100B of the second modification includes the coaxial connector 7B instead of the coaxial connector 7A.
  • the coaxial connector 7B is arranged in the recess 11b formed at the end portion 11c of the connector connection portion 11 in the minus Z-axis direction.
  • the recess 11b is a portion in which a part of the end portion 11c of the connector connecting portion 11 in the minus Z-axis direction is recessed in a protruding shape in the plus Z-axis direction.
  • the connector terminal 7a of the coaxial connector 7B is connected to the signal line conductor 4 on the connector connection portion 11 in a state where the main body portion 7c of the coaxial connector 7B is in contact with the bottom portion 11b1 of the recess 11b.
  • the connector terminal 7a of the coaxial connector 7B connected to the signal line conductor 4 is arranged in a region where the end surface 12a of the folded-back portion 12 and the end surface 11a of the connector connecting portion 11 face each other.
  • the folded-back portion 12 When the grounding conductor 2 provided on the folded-back portion 12 is viewed in a plan view on the XZ plane, the folded-back portion 12 extends from the virtual line VL extending the connector terminal 7a in the Y-axis direction in the plus X-axis direction and the minus X-axis direction. They are arranged so as to cover up to a position separated by a certain distance from each other and to cover a certain distance from the virtual line VL in the plus Z-axis direction and the minus Z-axis direction, respectively.
  • the length of the main body 7c of the coaxial connector 7B in the Z-axis direction is preferably shorter than the depth of the recess 11b in the Z-axis direction. As a result, the entire main body 7c of the coaxial connector 7B can enter the recess 11b, and the amount of the main body 7c of the coaxial connector 7B protruding from the end 11c of the connector connection 11 in the minus Z-axis direction can be reduced.
  • the high-frequency shield structure 100B by providing the coaxial connector 7B in the recess 11b formed in the connector connection portion 11, the amount of the coaxial connector 7B protruding toward the minus Y-axis direction of the connector connection portion 11 is reduced, and the high-frequency shield The overall dimensions of the structure 100B can be reduced.
  • the space 8 formed inside the package formed by the connector connecting portion 11 and the folded-back portion 12 is narrowed, and the space 8 is formed as in the first modification. Even if the entire coaxial connector 7B cannot be installed, the coaxial connector 7B can be installed by effectively utilizing a part of the space 8. Therefore, the degree of freedom in designing the package formed by the connector connecting portion 11 and the folded portion 12 is increased, and the antenna having the high frequency shield structure 100B can be miniaturized.
  • FIG. 7 is a cross-sectional view of the high frequency shield structure according to the embodiment of the present invention.
  • FIG. 8 is a plan view of the high frequency shield structure shown in FIG. 7 in the XZ plane.
  • the description of the same configuration and effect as the high frequency shield structure 100 will be omitted or simplified by referring to the above description.
  • the high frequency shield structure 100C of the third modification includes a SIW200 and a coaxial-SIW (Substrate Integrated Waveguide) converter 6.
  • the SIW200 is a substrate-integrated waveguide that is formed in the connector connection portion 11 and has a shield structure that shields electromagnetic waves and transmits signals in a waveguide mode.
  • SIW200 may be referred to as a substrate built-in waveguide or a post-wall waveguide.
  • the SIW 200 is provided on the dielectric 1a, the conductor layer 21 provided on the positive Y-axis direction surface of the dielectric 1a, the conductor layer 22 provided on the negative Y-axis direction surface of the dielectric 1a, and the dielectric 1a. It is composed of a plurality of conductor columns 20.
  • the connector terminal 7a of the coaxial connector 7 is connected to the SIW200 via the coaxial-SIW converter 6.
  • the conductor column 20 is a solid or hollow columnar conductor that extends from the conductor layer 21 toward the conductor layer 22 and electrically connects the conductor layer 21 and the conductor layer 22.
  • a plurality of conductor columns 20 are arranged at intervals so that high-frequency signals propagating in SIW 200 do not leak to the outside.
  • each of the conductor layer 21 and the conductor layer 22 is preferably 0.09 ⁇ m or more, more preferably 0.35 ⁇ m or more.
  • the thickness of each of the conductor layer 21 and the conductor layer 22 is preferably 110 ⁇ m or less.
  • a plurality of conductor columns 23 and a conductor layer 24 are formed at the end portion 13 of the folded portion 12.
  • the conductor layer 24 is provided on the surface of the folded-back portion 12 opposite to the ground conductor 2 side.
  • the conductor layer 24 is provided at a position facing the conductor layer 21 of the connector connecting portion 11, and is in contact with the conductor layer 21.
  • the conductor column 23 is a solid or hollow columnar conductor that extends from the ground conductor 2 toward the conductor layer 24 and electrically connects the ground conductor 2 and the conductor layer 24.
  • a closed loop ground is formed by the grounding conductor 2, the conductor column 23, the conductor layer 24, the conductor layer 21, the conductor column 20, and the conductor layer 22 of the connector connecting portion 11.
  • a fastening member 27 is used to maintain the contact state between the conductor layer 24 and the conductor layer 21 forming the ground of the closed loop.
  • the fastening member 27 may be, for example, a combination of a screw penetrating from the folded-back portion 12 toward the connector connecting portion 11 and a nut into which the screw is tightened. By using the fastening member 27, the conductor layer 24 of the folded-back portion 12 comes into close contact with the conductor layer 21 of the connector connecting portion 11.
  • SIW200 can be used to provide a closed loop gland on the envelope formed by the connector connecting portion 11 and the folded portion 12. Since the conventional flexible board on which the coaxial-SIW converter 6 is formed does not have the folded-back portion 12, the frequency used for the signal transmitted to the coaxial-SIW converter 6 or the like is around the flexible board. In addition, in the conventional flexible substrate, there is a risk of affecting the devices existing in the surroundings due to unnecessary radiated power at the operating frequency. In addition, there is concern about the influence of surrounding devices. On the other hand, since the high frequency shield structure 100C is provided with the folded-back portion 12, such a problem can be solved.
  • the high-frequency shield structure 100C by connecting the conductor layer 24 of the folded-back portion 12 to the conductor layer 21 of the SIW200, a closed loop ground can be formed, so that the antenna connected to the tip of the open portion of the connector terminal 7a It is difficult to affect the radiation pattern of.
  • the configuration of the high frequency shield structure 100C can also be combined with the high frequency shield structure 100A and the high frequency shield structure 100B.
  • FIG. 9 is a cross-sectional view of a fourth modification of the high frequency shield structure according to the embodiment of the present invention.
  • FIG. 10 is a plan view of the high frequency shield structure shown in FIG. 9 in the XZ plane. The description of the same configuration and effect as the high frequency shield structure 100C will be omitted or simplified by referring to the above description.
  • solder 26 is used instead of the fastening member 27 in the high frequency shield structure 100D of the fourth modification.
  • a plurality of holes 25 are formed in the region near the end of the folded-back portion 12. Each of the plurality of holes 25 penetrates from the ground conductor 2 on the folded-back portion 12 side toward the conductor layer 24. By providing the solder 26 in the hole 25, the ground conductor 2 on the folded-back portion 12 side is electrically connected to the conductor layer 24. A closed loop ground is formed by the grounding conductor 2, the solder 26, the conductor layer 24, the conductor layer 21, and the conductor column 20.
  • the same effect as that of the high frequency shield structure 100C can be obtained, and since the fastening member 27 is unnecessary, the configuration is simplified and the reliability of the high frequency shield structure 100D is improved. Further, since the fastening member 27 is not used, for example, retightening of the fastening member 27 becomes unnecessary, and an increase in maintenance cost can be suppressed.
  • FIG. 11 is a cross-sectional view of a fifth modification of the high frequency shield structure according to the embodiment of the present invention.
  • the description of the same configuration and effect as the high frequency shield structure 100C will be omitted or simplified by referring to the above description.
  • the folded-back portion 30 is formed in the region of the folded-back portion 12 near the end portion 13.
  • the folded-back portion 30 is formed by folding back the region of the folded-back portion 12 near the end portion 13 in the direction of the arrow B. That is, the end portion 13 of the folded-back portion 12 is folded back so that the grounding conductor 2 provided on the outside of the folded-back portion 12 is in contact with the conductor layer 21 provided on the connector connecting portion 11. As a result, a part of the grounding conductor 2 provided in the folded-back portion 12 comes into contact with the conductor layer 21, and a closed loop ground is formed.
  • a closed-loop ground can be provided without providing the conductor column 23 or the like shown in FIG. 7, and the structure is simplified and reliability is improved.
  • FIG. 12A is a plan view of a sixth modification of the high frequency shield structure according to the embodiment of the present invention in the XZ plane.
  • FIG. 12B is a perspective view of the flexible substrate according to the sixth modification.
  • the description of the same configuration and effect as the high frequency shield structure 100C will be omitted or simplified by referring to the above description.
  • the high-frequency shield structure 100F of the sixth modification includes two closing members 51 in addition to the configuration of the high-frequency shield structure 100C.
  • the closing member 51 is a member for closing the opening 50 in the Z-axis direction of the space 8 inside the package formed by the connector connecting portion 11 and the folded portion 12.
  • the closing member 51 includes a grounding conductor similar to the grounding conductor 2 included in the flexible substrate 1.
  • the closing member 51 can utilize, for example, a part of the flexible substrate 1, and extends from the folded-back portion 12 in the Z-axis direction, for example.
  • FIG. 12B shows a state before the closing member 51 formed integrally with the folded-back portion 12 is bent.
  • the high frequency shield structure 100F shown in FIG. 12A is formed by bending the closing member 51 in the direction of the arrow C so that the opening 50 is closed.
  • the bent closing member 51 is fixed to the housing of the device to which the high-frequency shield structure 100F is attached by, for example, the fastening member 40.
  • the closing member 51 may be configured to close a part of the opening 50, or may be configured to close the entire opening 50.
  • the dimension of the gap between the opening 50 and the closing member 51 is preferably set to a value equal to or less than the length L described above. Further, as the closing member 51, a member separate from the flexible substrate 1 may be prepared and this member may be used.
  • the high-frequency shield structure 100F According to the high-frequency shield structure 100F, at least a part of the opening 50 formed in the Z-axis direction of the package formed by the connector connecting portion 11 and the folded portion 12 is closed, so that unnecessary radiation is further suppressed. Will be done.
  • a member separate from the flexible substrate 1 is used as the closing member 51, it is necessary to fix the four sides of the member to the flexible substrate 1.
  • the high-frequency shield structure 100F by using the closing member 51 integrally formed with the folded-back portion 12, for example, only three sides of the closing member 51 are fixed to the flexible substrate 1 to obtain a high frequency. A shield structure 100F can be obtained. Therefore, the amount of work required for fixing is reduced, the number of man-hours for assembling the high-frequency shield structure 100F is reduced, and the high-frequency shield structure 100F can be manufactured at low cost.
  • the closed structure of the high frequency shield structure 100F can be combined with the high frequency shield structure 100 to the high frequency shield structure 100D.
  • FIG. 13 is a cross-sectional view of a seventh modification of the high frequency shield structure according to the embodiment of the present invention.
  • the description of the same configuration and effect as the high frequency shield structure 100D will be omitted or simplified by referring to the above description.
  • the high-frequency shield structure 100G of the seventh modification includes a radio wave absorber 52 in addition to the configuration of the high-frequency shield structure 100D.
  • the radio wave absorber 52 is fixed to, for example, the end surface 12a of the folded-back portion 12 on the virtual line VL extending the connector terminal 7a in the Y-axis direction.
  • the radio wave absorber for example, Ecosorb (registered trademark) can be exemplified.
  • FIG. 14A is a perspective view of a housing model of a comparative example for explaining the effect of the high frequency shield structure according to the embodiment of the present invention.
  • the housing model 100'(comparative example) is, for example, a high-frequency shield structure in which the folded-back portion 12 is omitted from the high-frequency shield structure 100C of FIG.
  • the set values of the model of FIG. 14A are shown in FIG. Length of connector connection 11 in the Z-axis direction L 1 : 22 mm Relative permittivity of dielectric 1a: 2.0 Thickness of conductor layer 21: 43 ⁇ m Thickness of conductor layer 22: 43 ⁇ m Thickness of ground conductor 2: 43 ⁇ m The thickness of the signal line conductor 4 was set to 43 ⁇ m.
  • FIG. 14B is a diagram showing an example of the simulation result of the S parameter by the model of FIG. 14A.
  • the vertical axis is the S parameter, and the horizontal axis is the frequency.
  • the S parameter represents the ratio of the power reflected from the coaxial connector to the coaxial connector to the power flowing out from the microstrip line to the SIW.
  • the solid line S11 represents the power reflected from the coaxial connector to the coaxial connector, and the broken line S21 represents the power passing from the coaxial connector to the SIW. From FIG. 14B, it can be seen that the reflected power is small and the passing power passes at about 0 dB in the vicinity of the frequency of 28 GHz.
  • FIG. 14C is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of the model of FIG. 14A.
  • the vertical axis is the total power radiated from the high frequency shield structure, and the horizontal axis is the frequency.
  • the folded-back portion 12 since the folded-back portion 12 is not provided, it does not function as a coaxial-SIW converter and does not radiate in the region of 20 GHz or less, but it radiates in the high region of 20 GHz or more.
  • FIG. 14D is a diagram showing an example of the simulation result of the antenna gain when the high frequency shield structure of the model of FIG. 14A is used.
  • the vertical axis represents the antenna gain at a specific angle at 28 GHz
  • the horizontal axis represents the angle of the spherical coordinate system.
  • the solid line is a plot of the antenna gain at the angle of the YZ plane from the minus Y axis direction to the plus Y axis direction.
  • the broken line is a plot of the antenna gain at the angle of the XY plane from the minus X axis direction to the plus X axis direction.
  • FIG. 15A is a perspective view of a model for explaining the first effect of the high frequency shield structure according to the embodiment of the present invention.
  • FIG. 15A schematically shows the high frequency shield structure 100C of FIG.
  • the high-frequency shield structure of FIG. 15A is obtained by adding a folded portion 12 to the model of FIG. 14A.
  • the length L is longer than 1/2 wavelength of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed.
  • the set value of the high frequency shield structure of FIG. 15A is Length of connector connection 11 in the Z-axis direction L 1 : 22 mm Length of folded portion 12 in the X-axis direction L 2 : 8.5 mm Height of folded portion 12 in the Y-axis direction L 3 : 2 mm Relative permittivity of dielectric 1a: 2.0 Thickness of conductor layer 21: 43 ⁇ m Thickness of conductor layer 22: 43 ⁇ m Thickness of ground conductor 2: 43 ⁇ m The thickness of the signal line conductor 4 was set to 43 ⁇ m.
  • FIG. 15B is a diagram showing an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 15A.
  • FIG. 15B shows S-parameters, similar to FIG. 14B. From FIG. 15B, since the same simulation result as in FIG. 14B can be obtained, it can be seen that there is no influence due to the provision of the folded portion 12.
  • FIG. 15C is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of FIG. 15A.
  • FIG. 15C shows the total radiated power value as in FIG. 14C.
  • radio waves are radiated from the openings formed by the connector connecting portion 11 and the folded-back portion 12, so that the total radiated power value is the same simulation result as in FIG. 14C.
  • FIG. 15D is a diagram showing an example of an antenna gain simulation result when the high frequency shield structure of FIG. 15A is used.
  • FIG. 15D shows the total radiated power value as in FIG. 14D.
  • FIG. 16A is a perspective view of a model for explaining the second effect of the high frequency shield structure according to the embodiment of the present invention.
  • FIG. 16A schematically shows the high frequency shield structure 100F of FIG. 12A.
  • the high-frequency shield structure of FIG. 16A is obtained by adding the closing member 51 to the model of FIG. 15A.
  • the length L is longer than 1/2 wavelength of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed, as in the model of FIG. 15A.
  • the set value of the high frequency shield structure of FIG. 16A is Length of connector connection 11 in the Z-axis direction L 1 : 22 mm Length of folded portion 12 in the X-axis direction L 2 : 8.5 mm Height of folded portion 12 in the Y-axis direction L 3 : 2 mm Relative permittivity of dielectric 1a: 2.0 Thickness of conductor layer 21: 43 ⁇ m Thickness of conductor layer 22: 43 ⁇ m Thickness of ground conductor 2: 43 ⁇ m The thickness of the signal line conductor 4 was set to 43 ⁇ m.
  • FIG. 16B is a diagram showing an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 16A. From FIG. 16B, the same simulation result as in FIG. 15B can be obtained.
  • FIG. 16C is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of FIG. 16A.
  • the closing member 51 since the closing member 51 is added, the radiated radio wave from the opening is suppressed, so that the total radiated power value is significantly suppressed.
  • FIG. 16D is a diagram showing an example of an antenna gain simulation result when the high frequency shield structure of FIG. 16A is used.
  • the closing member 51 since the closing member 51 is added, unnecessary radio waves radiated in the extending direction of the virtual line VL extending the connector terminal 7a in the Y-axis direction, that is, in the 0 ° direction are suppressed, and further. Since unnecessary radio waves radiated in directions other than that direction are also suppressed, the antenna gain in all directions is significantly reduced.
  • FIG. 17A is a perspective view of a first model for explaining a third effect of the high frequency shield structure according to the embodiment of the present invention.
  • FIG. 17B is a plan view of the high frequency shield structure of FIG. 17A in the XY plane. 17A and 17B show a high frequency shield structure for explaining the effect of the length L described above.
  • the high-frequency shield structure of FIG. 17A is obtained by moving the position of the coaxial connector in the counterclockwise direction by 90 ° to deform the shape of the folded-back portion 12.
  • the length L is longer than 1/2 wavelength of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed. Further, the high frequency shield structure is not provided with the closing member 51.
  • the set value of the high frequency shield structure is Length of connector connection 11 in the Z-axis direction L 1 : 22 mm Length of folded portion 12 in the X-axis direction L 2 : 4 mm Height of the folded-back portion 12 in the Y-axis direction L 3 : 8.5 mm
  • Relative permittivity of dielectric 1a 2.0 Thickness of conductor layer 21: 43 ⁇ m
  • Thickness of conductor layer 22 43 ⁇ m
  • Thickness of ground conductor 2 43 ⁇ m
  • the thickness of the signal line conductor 4 was set to 43 ⁇ m.
  • FIG. 17C is a diagram showing an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 17A.
  • FIG. 17D is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of FIG. 17A.
  • FIG. 17E is a diagram showing an example of an antenna gain simulation result when the high frequency shield structure of FIG. 17A is used. From FIGS. 17C, 17D and 17E, simulation results similar to those of FIGS. 15B, 15C and 15D can be obtained.
  • FIG. 18A is a perspective view of a second model for explaining the third effect of the high frequency shield structure according to the embodiment of the present invention.
  • FIG. 18B is a plan view of the high frequency shield structure of FIG. 18A in the XY plane.
  • 18A and 18B show a high-frequency shield structure in which L 3 in FIG. 17B is shortened so that the length L is less than 1/2 of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed. Is done.
  • the set value of the high frequency shield structure is Length of connector connection 11 in the Z-axis direction L 1 : 22 mm Length of folded portion 12 in the X-axis direction L 2 : 4 mm Height of folded-back portion 12 in the Y-axis direction L 3 : 4.5 mm
  • Relative permittivity of dielectric 1a 2.0 Thickness of conductor layer 21: 43 ⁇ m
  • Thickness of conductor layer 22 43 ⁇ m
  • Thickness of ground conductor 2 43 ⁇ m
  • the thickness of the signal line conductor 4 was set to 43 ⁇ m.
  • FIG. 18C is a diagram showing an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 18A.
  • FIG. 18D is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of FIG. 18A.
  • FIG. 18E is a diagram showing an example of a simulation result of the antenna gain when the high frequency shield structure of FIG. 18A is used.
  • the simulation result of FIG. 18C is the same as that of FIG. 17C, but it can be seen from FIGS. 18D and 18E that the total power value and the antenna gain are significantly reduced by shortening the length L.
  • the configuration shown in the above-described embodiment shows an example of the content of the present invention, can be combined with another known technique, and is one of the configurations without departing from the gist of the present invention. It is also possible to omit or change the part.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

A high-frequency shield structure according to the present invention is provided with: a flexible substrate; and a coaxial connector connected to the flexible substrate. The flexible substrate is provided with: a connector-connecting section to which the coaxial connector is connected and that is a substrate region in which a connector terminal serving as a signal line conductor of the coaxial connector is provided; a foldback section serving as a substrate region in which an end section of the flexible substrate is folded back towards the connector-connecting section so as to cover the connector terminal; grounding conductors that are provided in the connector-connecting section and the foldback section and that cover the connector terminal; and a ground conductor that electrically connects the grounding conductor provided on the connector-connecting section side and the grounding conductor covering the foldback section side.

Description

高周波シールド構造High frequency shield structure
　本発明は、基板に接続された同軸コネクタのコネクタ端子を高周波的にシールドする高周波シールド構造に関する。 The present invention relates to a high frequency shield structure that shields the connector terminal of a coaxial connector connected to a substrate at a high frequency.
　特許文献１には、基板に接続されたコネクタの信号線導体であるコネクタ端子のシールド構造が開示される。特許文献１のシールド構造では、基板から露出するコネクタ端子をシールド材であるＦＰＣ（Flexible Printed Circuits）で覆い、ＦＰＣの基板への接触部分にはんだ付けが行われる。これにより、基板へのＦＰＣの取り付けのために、ＦＰＣや基板にねじ穴を施して、ねじ、ワッシャ、及びナットを取り付けるなどの措置が不要になり、省スペースでありながら、取り付けが容易なシールド構造が得られる。 Patent Document 1 discloses a shield structure of a connector terminal which is a signal line conductor of a connector connected to a substrate. In the shield structure of Patent Document 1, the connector terminals exposed from the substrate are covered with FPC (Flexible Printed Circuits) which is a shielding material, and the contact portion of the FPC with the substrate is soldered. This eliminates the need for screw holes, screws, washers, and nuts to attach the FPC to the board, which saves space and is easy to install. The structure is obtained.
特開平５－１３６５９３号公報Japanese Unexamined Patent Publication No. 5-136593
　しかしながら、特許文献１に示される従来技術では、コネクタ端子をシールドするために、追加の部品であるＦＰＣなどが必要なため、構造をより一層簡素化しながらシールド構造を提供する上での改善の余地がある。 However, in the prior art shown in Patent Document 1, since an additional component such as FPC is required to shield the connector terminal, there is room for improvement in providing a shield structure while further simplifying the structure. There is.
　そこで、本開示は、コネクタ端子のシールドを簡易な構成で実現できる高周波シールド構造を提供する。 Therefore, the present disclosure provides a high-frequency shield structure capable of realizing a shield of a connector terminal with a simple configuration.
　本開示は、フレキシブル基板と、前記フレキシブル基板に接続された同軸コネクタと、を備え、前記フレキシブル基板は、前記同軸コネクタが接続されると共に、前記同軸コネクタの信号線導体であるコネクタ端子が設けられる基板領域であるコネクタ接続部と、
　前記コネクタ端子を覆うように、前記フレキシブル基板の端部が前記コネクタ接続部側に折り返される基板領域である折り返し部と、前記コネクタ接続部及び前記折り返し部に設けられ、前記コネクタ端子を覆う接地導体と、前記コネクタ接続部側に設けられる前記接地導体と、前記折り返し部側を覆う前記接地導体とを、電気的に接続するグランド導体と、を備える高周波シールド構造を提供する。 The present disclosure includes a flexible substrate and a coaxial connector connected to the flexible substrate. The flexible substrate is provided with a connector terminal which is a signal line conductor of the coaxial connector as well as being connected to the coaxial connector. The connector connection part, which is the board area,
A folded portion, which is a board area in which the end portion of the flexible substrate is folded back toward the connector connecting portion side so as to cover the connector terminal, and a ground conductor provided at the connector connecting portion and the folded portion and covering the connector terminal. Provided is a high-frequency shield structure including a ground conductor provided on the connector connecting portion side and a ground conductor for electrically connecting the grounding conductor covering the folded-back portion side.
　本開示の技術によれば、コネクタ端子のシールドを簡易な構成で実現できる高周波シールド構造を提供できる。 According to the technology of the present disclosure, it is possible to provide a high frequency shield structure capable of realizing a shield of a connector terminal with a simple configuration.
本発明の実施の形態に係る高周波シールド構造の断面図である。It is sectional drawing of the high frequency shield structure which concerns on embodiment of this invention. 図１の高周波シールド構造をＸＺ平面で平面視した図である。It is a figure which looked at the high frequency shield structure of FIG. 1 in the XZ plane. 折り曲げ部が形成される前後のフレキシブル基板の状態を説明するための図である。It is a figure for demonstrating the state of the flexible substrate before and after the bent portion is formed. 図２Ｂに示す折り曲げ部が形成された後のフレキシブル基板の斜視図である。It is a perspective view of the flexible substrate after the bent portion shown in FIG. 2B is formed. 本発明の実施の形態に係る高周波シールド構造の断面図である。It is sectional drawing of the high frequency shield structure which concerns on embodiment of this invention. 図３の高周波シールド構造をＸＺ平面で平面視した図である。FIG. 3 is a plan view of the high frequency shield structure of FIG. 3 in the XZ plane. 本発明の実施の形態に係る高周波シールド構造の断面図である。It is sectional drawing of the high frequency shield structure which concerns on embodiment of this invention. 図５に示す高周波シールド構造をＸＺ平面で平面視した図である。FIG. 5 is a plan view of the high frequency shield structure shown in FIG. 5 in an XZ plane. 本発明の実施の形態に係る高周波シールド構造の第３変形例の断面図である。It is sectional drawing of the 3rd modification of the high frequency shield structure which concerns on embodiment of this invention. 図７に示す高周波シールド構造をＸＺ平面で平面視した図である。FIG. 7 is a view of the high frequency shield structure shown in FIG. 7 in a plan view on an XZ plane. 本発明の実施の形態に係る高周波シールド構造の第４変形例の断面図である。It is sectional drawing of the 4th modification of the high frequency shield structure which concerns on embodiment of this invention. 図９に示す高周波シールド構造をＸＺ平面で平面視した図である。9 is a view of the high frequency shield structure shown in FIG. 9 in a plan view on an XZ plane. 本発明の実施の形態に係る高周波シールド構造の第５変形例の断面図である。It is sectional drawing of the 5th modification of the high frequency shield structure which concerns on embodiment of this invention. 本発明の実施の形態に係る高周波シールド構造の第６変形例をＸＺ平面で平面視した図である。It is a figure which looked at the 6th modification of the high frequency shield structure which concerns on embodiment of this invention in the XZ plane. 第６変形例に係るフレキシブル基板の斜視図である。It is a perspective view of the flexible substrate which concerns on 6th modification. 本発明の実施の形態に係る高周波シールド構造の第７変形例の断面図である。It is sectional drawing of the 7th modification of the high frequency shield structure which concerns on embodiment of this invention. 本発明の実施の形態に係る高周波シールド構造による効果を説明するための比較例の筐体モデルの斜視図である。It is a perspective view of the housing model of the comparative example for demonstrating the effect by the high frequency shield structure which concerns on embodiment of this invention. 図１４ＡのモデルによるＳパラメータのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the S parameter by the model of FIG. 14A. 図１４Ａのモデルの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of the model of FIG. 14A. 図１４Ａのモデルの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the antenna gain when the high frequency shield structure of the model of FIG. 14A is used. 本発明の実施の形態に係る高周波シールド構造による第１の効果を説明するためのモデルの斜視図である。It is a perspective view of the model for demonstrating the first effect by the high frequency shield structure which concerns on embodiment of this invention. 図１５Ａの高周波シールド構造によるＳパラメータのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 15A. 図１５Ａの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of FIG. 15A. 図１５Ａの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the antenna gain when the high frequency shield structure of FIG. 15A is used. 本発明の実施の形態に係る高周波シールド構造による第２の効果を説明するためのモデルの斜視図である。It is a perspective view of the model for demonstrating the 2nd effect by the high frequency shield structure which concerns on embodiment of this invention. 図１６Ａの高周波シールド構造によるＳパラメータのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 16A. 図１６Ａの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of FIG. 16A. 図１６Ａの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the antenna gain when the high frequency shield structure of FIG. 16A is used. 本発明の実施の形態に係る高周波シールド構造による第３の効果を説明するための第１モデルの斜視図である。It is a perspective view of the 1st model for demonstrating the 3rd effect by the high frequency shield structure which concerns on embodiment of this invention. 図１７Ａの高周波シールド構造をＸＹ平面で平面視した図である。FIG. 17A is a plan view of the high frequency shield structure of FIG. 17A in the XY plane. 図１７Ａの高周波シールド構造によるＳパラメータのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 17A. 図１７Ａの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of FIG. 17A. 図１７Ａの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the antenna gain when the high frequency shield structure of FIG. 17A is used. 本発明の実施の形態に係る高周波シールド構造による第３の効果を説明するための第２モデルの斜視図である。It is a perspective view of the 2nd model for demonstrating the 3rd effect by the high frequency shield structure which concerns on embodiment of this invention. 図１８Ａの高周波シールド構造をＸＹ平面で平面視した図である。FIG. 18A is a plan view of the high frequency shield structure of FIG. 18A in the XY plane. 図１８Ａの高周波シールド構造によるＳパラメータのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 18A. 図１８Ａの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the electric power radiated from the high frequency shield structure of FIG. 18A. 図１８Ａの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。It is a figure which shows an example of the simulation result of the antenna gain when the high frequency shield structure of FIG. 18A is used.
　以下、図面を参照して、本開示に係る実施形態について説明する。なお、平行、直角、直交、水平、垂直、上下、左右などの方向には、例えばアンテナが設置される筐体が曲面で構成されている場合など、本発明の効果を損なわない程度のずれが許容される。また、Ｘ軸方向、Ｙ軸方向、Ｚ軸方向は、それぞれ、Ｘ軸に平行な方向、Ｙ軸に平行な方向、Ｚ軸に平行な方向を表す。Ｘ軸方向とＹ軸方向とＺ軸方向は、互いに直交する。ＸＹ平面、ＹＺ平面、ＺＸ平面は、それぞれ、Ｘ軸方向及びＹ軸方向に平行な仮想平面、Ｙ軸方向及びＺ軸方向に平行な仮想平面、Ｚ軸方向及びＸ軸方向に平行な仮想平面を表す。以下の図面において、Ｘ軸方向のうち、矢印で示す方向はプラスＸ軸方向とし、当該方向とは逆の方向はマイナスＸ軸方向とする。Ｙ軸方向のうち、矢印で示す方向はプラスＹ軸方向とし、当該方向とは逆の方向はマイナスＹ軸方向とする。Ｚ軸方向のうち、矢印で示す方向はプラスＺ軸方向とし、当該方向とは逆の方向はマイナスＺ軸方向とする。また、以下の図面の記載において、同一又は類似の部分には同一又は類似の符号を付している。ただし、図面は模式的なものであり、厚みと平面寸法との関係、各層の厚みの比率等は現実のものとは異なることに留意すべきである。従って、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれている。また、以下に示す実施の形態は、本発明の技術的思想を具体化するための構造を例示するものであって、本発明の技術的思想は、構成部品の材質、形状、構造、配置等を下記のものに特定するものでない。本発明の技術的思想は、特許請求の範囲に記載された請求項が規定する技術的範囲内において、種々の変更を加えることができる。 Hereinafter, embodiments according to the present disclosure will be described with reference to the drawings. In the directions of parallel, right angle, orthogonal, horizontal, vertical, up and down, left and right, etc., there is a deviation that does not impair the effect of the present invention, for example, when the housing in which the antenna is installed is composed of a curved surface. Permissible. Further, the X-axis direction, the Y-axis direction, and the Z-axis direction represent a direction parallel to the X-axis, a direction parallel to the Y-axis, and a direction parallel to the Z-axis, respectively. The X-axis direction, the Y-axis direction, and the Z-axis direction are orthogonal to each other. The XY plane, YZ plane, and ZX plane are a virtual plane parallel to the X-axis direction and the Y-axis direction, a virtual plane parallel to the Y-axis direction and the Z-axis direction, and a virtual plane parallel to the Z-axis direction and the X-axis direction, respectively. Represents. In the following drawings, of the X-axis directions, the direction indicated by the arrow is the plus X-axis direction, and the direction opposite to the direction is the minus X-axis direction. Of the Y-axis directions, the direction indicated by the arrow is the plus Y-axis direction, and the direction opposite to the direction is the minus Y-axis direction. Of the Z-axis directions, the direction indicated by the arrow is the plus Z-axis direction, and the direction opposite to the direction is the minus Z-axis direction. Further, in the description of the following drawings, the same or similar parts are designated by the same or similar reference numerals. However, it should be noted that the drawings are schematic, and the relationship between the thickness and the plane dimension, the ratio of the thickness of each layer, etc. are different from the actual ones. Therefore, there are parts in which the relations and ratios of the dimensions of the drawings are different from each other. Further, the embodiments shown below exemplify a structure for embodying the technical idea of the present invention, and the technical idea of the present invention includes the material, shape, structure, arrangement, etc. of the component parts. Is not specified as the following. The technical idea of the present invention may be modified in various ways within the technical scope specified by the claims stated in the claims.
　図１は本発明の実施の形態に係る高周波シールド構造の断面図である。図２Ａは図１の高周波シールド構造をＸＺ平面で平面視した図である。図２Ｂは折り曲げ部が形成される前後のフレキシブル基板の状態を説明するための図である。図２Ｃは図２Ｂに示す折り曲げ部が形成された後のフレキシブル基板の斜視図である。 FIG. 1 is a cross-sectional view of a high frequency shield structure according to an embodiment of the present invention. FIG. 2A is a plan view of the high frequency shield structure of FIG. 1 in the XZ plane. FIG. 2B is a diagram for explaining the state of the flexible substrate before and after the bent portion is formed. FIG. 2C is a perspective view of the flexible substrate after the bent portion shown in FIG. 2B is formed.
　高周波シールド構造１００は、フレキシブル基板１と、フレキシブル基板１に接続された同軸コネクタ７と、を備える。 The high frequency shield structure 100 includes a flexible substrate 1 and a coaxial connector 7 connected to the flexible substrate 1.
　フレキシブル基板１は、コネクタ接続部１１と、折り返し部１２と、接地導体２と、導通用のグランド導体９とを備える。 The flexible substrate 1 includes a connector connecting portion 11, a folded-back portion 12, a ground conductor 2, and a ground conductor 9 for conduction.
　フレキシブル基板１は、曲げることが可能な柔軟性を有し、弱い力で繰り返し変形させることが可能であり、変形した場合にもその電気的特性を維持する特性をもつ基板である。フレキシブル基板１は、一般的なリジッド基板（総厚３００μｍ～１，６００μｍ）と比較して薄く、加工性に優れるため、複雑な形状加工が可能である。フレキシブル基板１は、例えば、厚み１２μｍから３００μｍの薄膜状の誘電体１ａに、厚みが１２μｍ～３００μｍの接地導体２（例えば、導体箔など）が張り合わされた構造である。 The flexible substrate 1 is a substrate that has flexibility that allows it to be bent, can be repeatedly deformed with a weak force, and has the property of maintaining its electrical characteristics even when deformed. The flexible substrate 1 is thinner than a general rigid substrate (total thickness 300 μm to 1,600 μm) and has excellent workability, so that it is possible to process a complicated shape. The flexible substrate 1 has a structure in which, for example, a ground conductor 2 (for example, a conductor foil) having a thickness of 12 μm to 300 μm is bonded to a thin-film dielectric 1a having a thickness of 12 μm to 300 μm.
　誘電体１ａには、ソルダーレジスト（レジスト／フォトレジスト）、カバーレイ（Coverlay）と呼ばれる材料で、ポリイミド、ポリエステルなどが使用される。導体箔の材料には、例えば、金、銀、銅、アルミニウム、白金、クロムなどが用いられる。誘電体１ａは、例えば２８ＧＨｚにおける誘電正接（いわゆる、ｔａｎδ）が０．０１以下、特に０．０１以下であることが好ましい。なお、２８ＧＨｚにおける誘電正接は、ＧＨｚ帯の周波数における指標の例である。そのため、２８ＧＨｚにおける誘電正接が０．０１以下であれば、例えば、１ＧＨｚ～１００ＧＨｚにおいても信号線導体４の伝送損失が抑制されるので、２８ＧＨｚ近傍に限らず、１ＧＨｚ～１００ＧＨｚにおけるアンテナ素子のアンテナ利得を向上できる。信号線導体４は、不図示のアンテナ素子に接続される導電性の信号線であり、例えば、フレキシブル基板１のコネクタ接続部１１のプラスＹ軸方向の端面に設けられる。図２Ａに示すように、信号線導体４のマイナスＺ軸方向の端部４ａには、図１の貫通孔１１ｄと連通する貫通孔４ａ１が設けられている。貫通孔１１ｄは、コネクタ接続部１１に形成され、Ｙ軸方向にコネクタ接続部１１を貫通する穴である。 For the dielectric 1a, a material called solder resist (resist / photoresist) or coverlay (Coverlay), polyimide, polyester, or the like is used. As the material of the conductor foil, for example, gold, silver, copper, aluminum, platinum, chromium and the like are used. The dielectric 1a preferably has a dielectric loss tangent (so-called tan δ) of 0.01 or less, particularly 0.01 or less, at, for example, 28 GHz. The dielectric loss tangent at 28 GHz is an example of an index at a frequency in the GHz band. Therefore, if the dielectric loss tangent at 28 GHz is 0.01 or less, the transmission loss of the signal line conductor 4 is suppressed even at 1 GHz to 100 GHz, so that the antenna gain of the antenna element at 1 GHz to 100 GHz is not limited to around 28 GHz. Can be improved. The signal line conductor 4 is a conductive signal line connected to an antenna element (not shown), and is provided, for example, on the end face of the connector connecting portion 11 of the flexible substrate 1 in the plus Y-axis direction. As shown in FIG. 2A, a through hole 4a1 communicating with the through hole 11d of FIG. 1 is provided at the end portion 4a of the signal line conductor 4 in the minus Z-axis direction. The through hole 11d is a hole formed in the connector connecting portion 11 and penetrating the connector connecting portion 11 in the Y-axis direction.
　アンテナ素子は、例えば図２Ａの信号線導体４のプラスＺ軸方向側に設けられている。アンテナ素子は、マイクロ波やミリ波等の高周波帯（例えば、１ＧＨｚ超～３００ＧＨｚ）の電波の送受に好適である。アンテナ素子は、例えば、Ｖ２Ｘ通信システム、第５世代移動通信システム（いわゆる、５Ｇ）、車載レーダーシステムなどに適用可能であるが、適用可能なシステムはこれらに限られない。周波数域としては、例えばＩＴＳ（Intelligent Transport Systems：高度道路交通システム）（５．８９ＧＨｚ）用や、５Ｇ（２８ＧＨｚ帯、３．６から６ＧＨｚ帯、３９ＧＨｚ帯）用、Ｗｉ－Ｆｉ（２．４ＧＨｚ、５ＧＨｚ）用であってよい。 The antenna element is provided, for example, on the plus Z axis direction side of the signal line conductor 4 in FIG. 2A. The antenna element is suitable for transmitting and receiving radio waves in a high frequency band (for example, over 1 GHz to 300 GHz) such as microwaves and millimeter waves. The antenna element can be applied to, for example, a V2X communication system, a 5th generation mobile communication system (so-called 5G), an in-vehicle radar system, and the like, but the applicable system is not limited to these. As the frequency range, for example, for ITS (Intelligent Transport Systems) (5.89 GHz), for 5 G (28 GHz band, 3.6 to 6 GHz band, 39 GHz band), Wi-Fi (2.4 GHz, It may be for 5 GHz).
　コネクタ接続部１１は、フレキシブル基板１全体の内、同軸コネクタ７が接続される基板領域である。コネクタ接続部１１のマイナスＹ軸方向の端面側に、同軸コネクタ７の本体部７ｃが設けられる。同軸コネクタ７の本体部７ｃからプラスＹ軸方向に、コネクタ端子７ａが伸びる。 The connector connection portion 11 is a board area to which the coaxial connector 7 is connected in the entire flexible board 1. The main body 7c of the coaxial connector 7 is provided on the end surface side of the connector connection portion 11 in the minus Y-axis direction. The connector terminal 7a extends from the main body 7c of the coaxial connector 7 in the plus Y-axis direction.
　コネクタ端子７ａは、高周波信号を伝送するための信号線導体である。コネクタ端子７ａは、コネクタ接続部１１に形成される貫通孔１１ｄに挿入され、さらに、信号線導体４の端部４ａに形成される貫通孔４ａ１に挿入される。 The connector terminal 7a is a signal line conductor for transmitting a high frequency signal. The connector terminal 7a is inserted into the through hole 11d formed in the connector connection portion 11, and further inserted into the through hole 4a1 formed in the end portion 4a of the signal line conductor 4.
図２Ｂに示すように、板状に展開したフレキシブル基板１の端部１３側の領域（破線で示される領域）を、矢印Ａの方向に折り返すことにより、折り返し部１２が形成される。すなわち、フレキシブル基板１の端部１３側の領域を、コネクタ端子７ａを覆うように、コネクタ接続部１１側に折り返されることにより、折り返し部１２が形成される。　 As shown in FIG. 2B, the folded-back portion 12 is formed by folding back the region 13 side of the end portion 13 (the region shown by the broken line) of the flexible substrate 1 developed in a plate shape in the direction of the arrow A. That is, the folded-back portion 12 is formed by folding back the region on the end portion 13 side of the flexible substrate 1 toward the connector connecting portion 11 side so as to cover the connector terminal 7a.
折り返し部１２のマイナスＹ軸方向の端面１２ａは、コネクタ接続部１１のプラスＹ軸方向の端面１１ａとＹ軸方向において、対向する。そして、折り返し部１２のマイナスＸ軸方向の先端部（フレキシブル基板１の端部１３に相当）が、コネクタ接続部１１に接することにより、包状体が形成される。コネクタ接続部１１及び折り返し部１２によって形成される包状体の内側には、空間８が形成される。 The end face 12a of the folded-back portion 12 in the minus Y-axis direction faces the end face 11a of the connector connecting portion 11 in the plus Y-axis direction in the Y-axis direction. Then, the tip portion of the folded-back portion 12 in the minus X-axis direction (corresponding to the end portion 13 of the flexible substrate 1) comes into contact with the connector connecting portion 11, so that a package is formed. A space 8 is formed inside the package formed by the connector connecting portion 11 and the folded portion 12.
　接地導体２は、コネクタ接続部１１及び折り返し部１２に設けられ、コネクタ端子７ａを覆うグラウンド用導体である。接地導体２は、コネクタ接続部１１及び折り返し部１２をＸＹ平面で平面視したときに、上記の包状体の外側を覆うように設けられる。 The ground conductor 2 is a ground conductor provided at the connector connecting portion 11 and the folded portion 12 and covering the connector terminal 7a. The ground conductor 2 is provided so as to cover the outside of the envelope when the connector connecting portion 11 and the folded portion 12 are viewed in a plan view on an XY plane.
　接地導体２は、フレキシブル基板１に形成される導体パターンでもよいし、フレキシブル基板１とは別に予め製造された後にフレキシブル基板１に配置される導体シート、導体基板などでもよい。接地導体２の材料には、例えば、金、銀、銅、アルミニウム、白金、クロムなどが用いられる。接地導体２の厚さは、０．０９μｍ以上が好ましく、０．３５μｍ以上がより好ましい。また、接地導体２の厚さは、１１０μｍ以下が好ましい。 The grounding conductor 2 may be a conductor pattern formed on the flexible substrate 1, or may be a conductor sheet, a conductor substrate, or the like which is manufactured in advance separately from the flexible substrate 1 and then arranged on the flexible substrate 1. As the material of the ground conductor 2, for example, gold, silver, copper, aluminum, platinum, chromium and the like are used. The thickness of the ground conductor 2 is preferably 0.09 μm or more, more preferably 0.35 μm or more. The thickness of the ground conductor 2 is preferably 110 μm or less.
　グランド導体９は、グランド用の導体であり、互いに接触するコネクタ接続部１１及び折り返し部１２に設けられる。グランド導体９は、コネクタ接続部１１側の接地導体２と折り返し部１２側の接地導体２とを、電気的に接続する中実又は中空の柱状導電体であることが好ましい。 The ground conductor 9 is a conductor for ground, and is provided at the connector connecting portion 11 and the folded portion 12 which are in contact with each other. The ground conductor 9 is preferably a solid or hollow columnar conductor that electrically connects the ground conductor 2 on the connector connecting portion 11 side and the ground conductor 2 on the folded portion 12 side.
コネクタ接続部１１側の接地導体２から、折り返し部１２側の接地導体２に向かって伸びるグランド導体９と、接地導体２とによって、閉ループのグランドが形成される。 A closed-loop ground is formed by the ground conductor 9 extending from the ground conductor 2 on the connector connection portion 11 side toward the ground conductor 2 on the folded-back portion 12 side, and the ground conductor 2.
　図１に示す長さＬは、包状体を覆う接地導体２の内側の最大寸法に相当する。長さＬは、不要放射を抑圧した周波数帯の中心周波数での波長の１／２波長以下の値に設定される。包状体を覆う接地導体２の内側の最大寸法をこの値に設定することにより、不要放射がより一層小さくなり、高周波シールド構造１００の周囲に設けられる機器へ与えるノイズの影響をより小さくできる。 The length L shown in FIG. 1 corresponds to the maximum dimension inside the ground conductor 2 covering the envelope. The length L is set to a value of 1/2 wavelength or less of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed. By setting the maximum dimension inside the grounding conductor 2 that covers the package to this value, unnecessary radiation can be further reduced, and the influence of noise on the equipment provided around the high-frequency shield structure 100 can be further reduced.
コネクタ端子７ａの先端は、信号線導体４の貫通孔４ａ１を介して、空間８に突き出る。コネクタ端子７ａに、はんだ５が設けられることにより、コネクタ端子７ａが信号線導体４と電気的に接続される。コネクタ端子７ａは、折り返し部１２の端面１２ａとコネクタ接続部１１の端面１１ａとが対向する領域に配置される。　 The tip of the connector terminal 7a protrudes into the space 8 through the through hole 4a1 of the signal line conductor 4. By providing the solder 5 on the connector terminal 7a, the connector terminal 7a is electrically connected to the signal line conductor 4. The connector terminal 7a is arranged in a region where the end surface 12a of the folded-back portion 12 and the end surface 11a of the connector connecting portion 11 face each other.
具体的には、折り返し部１２に設けられた接地導体２を、ＸＺ平面で平面視したとき、折り返し部１２は、コネクタ端子７ａをＹ軸方向に延長した仮想線ＶＬから、プラスＸ軸方向とマイナスＸ軸方向へそれぞれ一定距離（例えば数ｍｍから数十ｍｍ）離れた位置まで覆うと共に、当該仮想線ＶＬから、プラスＺ軸方向とマイナスＺ軸方向へそれぞれ一定距離（例えば数ｍｍから数十ｍｍ）離れた位置まで覆うように、配置される。折り返し部１２が形成されたとき、折り返し部１２の端面１２ａからコネクタ接続部１１の端面１１ａまでの最短距離は、例えば１ｍｍ以下が好ましく、５００ｕｍ以下がより好ましい。なお、コネクタ端子７ａの開放部の方向が、コネクタ端子７ａの開放部の先に接続されるアンテナの放射パターンの方向に向いている場合、すなわちコネクタ端子７ａが伸びる方向がアンテナのメインローブの方向と同じ場合、このアンテナの大事な放射パターンに影響を与え難い。放射パターンは、通信やレーダで使用する範囲である。 Specifically, when the grounding conductor 2 provided in the folded-back portion 12 is viewed in a plan view in the XZ plane, the folded-back portion 12 extends from the virtual line VL extending the connector terminal 7a in the Y-axis direction to the plus X-axis direction. It covers up to a certain distance (for example, several mm to several tens of mm) in the minus X-axis direction, and also a certain distance (for example, several mm to several tens) in the plus Z-axis direction and minus Z-axis direction from the virtual line VL. mm) Arranged so as to cover up to a distant position. When the folded-back portion 12 is formed, the shortest distance from the end surface 12a of the folded-back portion 12 to the end surface 11a of the connector connecting portion 11 is, for example, preferably 1 mm or less, more preferably 500 um or less. When the direction of the open portion of the connector terminal 7a is the direction of the radiation pattern of the antenna connected to the tip of the open portion of the connector terminal 7a, that is, the direction in which the connector terminal 7a extends is the direction of the main lobe of the antenna. In the same case, it is unlikely to affect the important radiation pattern of this antenna. The radiation pattern is the range used in communication and radar.
　コネクタ端子７ａは、本体部７ｃに設けられるケーブル７ｂを介して、不図示のＲＦモジュールと電気的に接続される。ＲＦモジュールは、各種機能を持つデバイスが実装された部品であり、一般的には増幅器、位相器、ミキサ、信号源、フィルタ、スイッチ、サーキュレータ、ＡＤ／ＤＡ（Analog to Digital / Digital to Analog）コンバータ、などのデバイスが実装され、入出力インターフェースにＲＦコネクタ及び電源／制御コネクタが設けられたものである。 The connector terminal 7a is electrically connected to an RF module (not shown) via a cable 7b provided in the main body 7c. An RF module is a component on which a device with various functions is mounted. Generally, an amplifier, a phase controller, a mixer, a signal source, a filter, a switch, a circulator, and an AD / DA (Analog to Digital / Digital to Analog) converter. , Etc. are mounted, and the input / output interface is provided with an RF connector and a power / control connector.
本実施の形態に係る高周波シールド構造１００によれば、１つのフレキシブル基板１を折り曲げることで、コネクタ端子７ａを覆うシールド構造を構成できる。これにより、フレキシブル基板１とは別の部品（例えば四角形状のシールド用部材）を追加する必要がなく、構造が簡素化されて信頼性が高い高周波シールド構造１００を得ることができる。また、四角形状のシールド用部材を利用した場合、シールド用部材の４つの辺を固定する必要があるのに対して、本発明では、フレキシブル基板１の１つの辺、すなわちフレキシブル基板１の端部１３をコネクタ接続部１１に固定するだけで高周波シールド構造１００を得ることができるため、固定に伴う作業量が少なくなり、高周波シールド構造１００の組立工数が減り、高周波シールド構造１００を低コストに製造できる。　 According to the high-frequency shield structure 100 according to the present embodiment, a shield structure covering the connector terminal 7a can be configured by bending one flexible substrate 1. As a result, it is not necessary to add a component (for example, a rectangular shield member) different from the flexible substrate 1, and the structure is simplified and a highly reliable high frequency shield structure 100 can be obtained. Further, when a quadrangular shielding member is used, it is necessary to fix the four sides of the shielding member, whereas in the present invention, one side of the flexible substrate 1, that is, the end portion of the flexible substrate 1. Since the high frequency shield structure 100 can be obtained only by fixing the 13 to the connector connection portion 11, the amount of work involved in fixing is reduced, the man-hours for assembling the high frequency shield structure 100 are reduced, and the high frequency shield structure 100 is manufactured at low cost. it can.
また、コネクタ端子７ａを覆うシールド構造により、不要放射が小さくなり、高周波シールド構造１００の周囲に設けられる機器へ与えるノイズの影響を小さくできる。また、高周波シールド構造１００の周囲に存在する機器が高周波シールド構造１００の近くに存在する場合でも、コネクタ端子７ａが折り返し部１２に覆われるため、コネクタ端子７ａと当該機器とが容量結合し難くなり、アンテナ特性への影響を軽減できる。　 Further, the shield structure covering the connector terminal 7a reduces unnecessary radiation, and the influence of noise on the equipment provided around the high frequency shield structure 100 can be reduced. Further, even when the device existing around the high-frequency shield structure 100 exists near the high-frequency shield structure 100, the connector terminal 7a is covered with the folded-back portion 12, so that it becomes difficult for the connector terminal 7a and the device to be capacitively coupled. , The influence on the antenna characteristics can be reduced.
図３は本発明の実施の形態に係る高周波シールド構造の第１変形例の断面図である。図４は図３の高周波シールド構造をＸＺ平面で平面視した図である。高周波シールド構造１００と同様の構成及び効果についての説明は、上述の説明を援用することで省略又は簡略する。第１変形例の高周波シールド構造１００Ａは、同軸コネクタ７に代えて、同軸コネクタ７Ａを備える。　 FIG. 3 is a cross-sectional view of a first modification of the high frequency shield structure according to the embodiment of the present invention. FIG. 4 is a plan view of the high frequency shield structure of FIG. 3 in the XZ plane. The description of the same configuration and effect as the high frequency shield structure 100 will be omitted or simplified by referring to the above description. The high-frequency shield structure 100A of the first modification includes a coaxial connector 7A instead of the coaxial connector 7.
同軸コネクタ７Ａは、コネクタ接続部１１及び折り返し部１２によって形成される包状体の内側の空間８に配置される。同軸コネクタ７Ａは、例えば、コネクタ接続部１１のプラスＹ軸方向の端面１１ａ側に設置され、グランド導体１０と電気的に接続される。　 The coaxial connector 7A is arranged in the space 8 inside the package formed by the connector connecting portion 11 and the folded portion 12. The coaxial connector 7A is installed, for example, on the end surface 11a side of the connector connection portion 11 in the plus Y-axis direction, and is electrically connected to the ground conductor 10.
グランド導体１０は、同軸コネクタ７Ａのグランド用の導体である。グランド導体１０は、面状端子１０ｂと、コネクタ接続部１１に設けられる複数の柱状端子１０ａとを備える。　 The ground conductor 10 is a conductor for grounding the coaxial connector 7A. The ground conductor 10 includes a planar terminal 10b and a plurality of columnar terminals 10a provided in the connector connecting portion 11.
面状端子１０ｂは、コネクタ端子７ａの端部の周囲を覆うように、コネクタ接続部１１のプラスＹ軸方向の端面１１ａに設けられる。面状端子１０ｂのプラスＹ軸方向の面には、同軸コネクタ７Ａが設置される。面状端子１０ｂのマイナスＹ軸方向の面には、柱状端子１０ａの一端に接続される。　 The planar terminal 10b is provided on the end surface 11a of the connector connection portion 11 in the plus Y-axis direction so as to cover the periphery of the end portion of the connector terminal 7a. A coaxial connector 7A is installed on the surface of the planar terminal 10b in the positive Y-axis direction. The surface of the planar terminal 10b in the minus Y-axis direction is connected to one end of the columnar terminal 10a.
柱状端子１０ａは、面状端子１０ｂから、コネクタ接続部１１のマイナスＹ軸方向の接地導体２に向かって伸び、柱状端子１０ａの他端は、接地導体２に接続される。これにより、同軸コネクタ７Ａは、接地導体２と電気的に接続される。同軸コネクタ７Ａのケーブル７ｂは、例えば、空間８のマイナスＺ軸方向に形成される開口部から、空間８の外部に引き出される。 The columnar terminal 10a extends from the planar terminal 10b toward the ground conductor 2 in the minus Y-axis direction of the connector connecting portion 11, and the other end of the columnar terminal 10a is connected to the ground conductor 2. As a result, the coaxial connector 7A is electrically connected to the ground conductor 2. The cable 7b of the coaxial connector 7A is drawn out of the space 8 from, for example, an opening formed in the minus Z-axis direction of the space 8.
　高周波シールド構造１００Ａによれば、コネクタ接続部１１及び折り返し部１２によって形成される包状体の内側に同軸コネクタ７Ａを設けることによって、コネクタ接続部１１のマイナスＹ軸方向側に同軸コネクタ７Ａが存在しなくなる分、高周波シールド構造１００Ａの全体寸法を小さくできる。従って、高周波シールド構造１００Ａの設置の自由度が増えると共に、高周波シールド構造１００Ａを備えるアンテナなどの小型化が可能である。 According to the high-frequency shield structure 100A, by providing the coaxial connector 7A inside the package formed by the connector connecting portion 11 and the folded-back portion 12, the coaxial connector 7A exists on the minus Y-axis direction side of the connector connecting portion 11. The overall size of the high-frequency shield structure 100A can be reduced by the amount that does not occur. Therefore, the degree of freedom in installing the high-frequency shield structure 100A is increased, and the antenna provided with the high-frequency shield structure 100A can be miniaturized.
　図５は本発明の実施の形態に係る高周波シールド構造の第２変形例の断面図である。図６は図５に示す高周波シールド構造をＸＺ平面で平面視した図である。高周波シールド構造１００と同様の構成及び効果についての説明は、上述の説明を援用することで省略又は簡略する。第２変形例の高周波シールド構造１００Ｂは、同軸コネクタ７Ａに代えて、同軸コネクタ７Ｂを備える。 FIG. 5 is a cross-sectional view of a second modification of the high frequency shield structure according to the embodiment of the present invention. FIG. 6 is a plan view of the high frequency shield structure shown in FIG. 5 in the XZ plane. The description of the same configuration and effect as the high frequency shield structure 100 will be omitted or simplified by referring to the above description. The high frequency shield structure 100B of the second modification includes the coaxial connector 7B instead of the coaxial connector 7A.
同軸コネクタ７Ｂは、コネクタ接続部１１のマイナスＺ軸方向の端部１１ｃに形成される凹部１１ｂに配置される。　 The coaxial connector 7B is arranged in the recess 11b formed at the end portion 11c of the connector connection portion 11 in the minus Z-axis direction.
凹部１１ｂは、コネクタ接続部１１のマイナスＺ軸方向の端部１１ｃの一部が、プラスＺ軸方向に向かって突形状に窪む部分である。凹部１１ｂの底部１１ｂ１に同軸コネクタ７Ｂの本体部７ｃが接した状態で、同軸コネクタ７Ｂのコネクタ端子７ａが、コネクタ接続部１１上の信号線導体４に接続される。 The recess 11b is a portion in which a part of the end portion 11c of the connector connecting portion 11 in the minus Z-axis direction is recessed in a protruding shape in the plus Z-axis direction. The connector terminal 7a of the coaxial connector 7B is connected to the signal line conductor 4 on the connector connection portion 11 in a state where the main body portion 7c of the coaxial connector 7B is in contact with the bottom portion 11b1 of the recess 11b.
　信号線導体４に接続される同軸コネクタ７Ｂのコネクタ端子７ａは、折り返し部１２の端面１２ａとコネクタ接続部１１の端面１１ａとが対向する領域に配置される。 The connector terminal 7a of the coaxial connector 7B connected to the signal line conductor 4 is arranged in a region where the end surface 12a of the folded-back portion 12 and the end surface 11a of the connector connecting portion 11 face each other.
　折り返し部１２に設けられた接地導体２を、ＸＺ平面で平面視したとき、折り返し部１２は、コネクタ端子７ａをＹ軸方向に延長した仮想線ＶＬから、プラスＸ軸方向とマイナスＸ軸方向へそれぞれ一定距離離れた位置まで覆うと共に、当該仮想線ＶＬから、プラスＺ軸方向とマイナスＺ軸方向へそれぞれ一定距離離れた位置まで覆うように、配置される。 When the grounding conductor 2 provided on the folded-back portion 12 is viewed in a plan view on the XZ plane, the folded-back portion 12 extends from the virtual line VL extending the connector terminal 7a in the Y-axis direction in the plus X-axis direction and the minus X-axis direction. They are arranged so as to cover up to a position separated by a certain distance from each other and to cover a certain distance from the virtual line VL in the plus Z-axis direction and the minus Z-axis direction, respectively.
　なお、同軸コネクタ７Ｂの本体部７ｃのＺ軸方向の長さは、凹部１１ｂのＺ軸方向の深さよりも短いことが好ましい。これにより、同軸コネクタ７Ｂの本体部７ｃの全体が、凹部１１ｂに入り込み、コネクタ接続部１１のマイナスＺ軸方向の端部１１ｃから、同軸コネクタ７Ｂの本体部７ｃが突き出る量を小さくできる。 The length of the main body 7c of the coaxial connector 7B in the Z-axis direction is preferably shorter than the depth of the recess 11b in the Z-axis direction. As a result, the entire main body 7c of the coaxial connector 7B can enter the recess 11b, and the amount of the main body 7c of the coaxial connector 7B protruding from the end 11c of the connector connection 11 in the minus Z-axis direction can be reduced.
　高周波シールド構造１００Ｂによれば、コネクタ接続部１１に形成される凹部１１ｂに同軸コネクタ７Ｂを設けることによって、コネクタ接続部１１のマイナスＹ軸方向側に同軸コネクタ７Ｂが突き出る量が小さくなり、高周波シールド構造１００Ｂの全体寸法を小さくできる。 According to the high-frequency shield structure 100B, by providing the coaxial connector 7B in the recess 11b formed in the connector connection portion 11, the amount of the coaxial connector 7B protruding toward the minus Y-axis direction of the connector connection portion 11 is reduced, and the high-frequency shield The overall dimensions of the structure 100B can be reduced.
　また、高周波シールド構造１００Ｂによれば、例えば、コネクタ接続部１１及び折り返し部１２によって形成される包状体の内側に形成される空間８が狭くなり、第１変形例のように、空間８に同軸コネクタ７Ｂの全体を設置できない場合でも、空間８の一部を有効利用して同軸コネクタ７Ｂを設置できる。従って、コネクタ接続部１１及び折り返し部１２によって形成される包状体の設計の自由度が増えると共に、高周波シールド構造１００Ｂを備えるアンテナなどの小型化が可能である。 Further, according to the high-frequency shield structure 100B, for example, the space 8 formed inside the package formed by the connector connecting portion 11 and the folded-back portion 12 is narrowed, and the space 8 is formed as in the first modification. Even if the entire coaxial connector 7B cannot be installed, the coaxial connector 7B can be installed by effectively utilizing a part of the space 8. Therefore, the degree of freedom in designing the package formed by the connector connecting portion 11 and the folded portion 12 is increased, and the antenna having the high frequency shield structure 100B can be miniaturized.
　図７は本発明の実施の形態に係る高周波シールド構造の断面図である。図８は図７に示す高周波シールド構造をＸＺ平面で平面視した図である。高周波シールド構造１００と同様の構成及び効果についての説明は、上述の説明を援用することで省略又は簡略する。第３変形例の高周波シールド構造１００Ｃは、ＳＩＷ２００と、同軸－ＳＩＷ（Substrate Integrated Waveguide）変換器６とを備える。 FIG. 7 is a cross-sectional view of the high frequency shield structure according to the embodiment of the present invention. FIG. 8 is a plan view of the high frequency shield structure shown in FIG. 7 in the XZ plane. The description of the same configuration and effect as the high frequency shield structure 100 will be omitted or simplified by referring to the above description. The high frequency shield structure 100C of the third modification includes a SIW200 and a coaxial-SIW (Substrate Integrated Waveguide) converter 6.
ＳＩＷ２００は、コネクタ接続部１１に形成され、電磁波を遮蔽するシールド構造を有し、導波管モードで信号を伝達する基板一体型導波路である。ＳＩＷ２００は、基板内蔵導波路、ポスト壁導波路と称する場合もある。　 The SIW200 is a substrate-integrated waveguide that is formed in the connector connection portion 11 and has a shield structure that shields electromagnetic waves and transmits signals in a waveguide mode. SIW200 may be referred to as a substrate built-in waveguide or a post-wall waveguide.
ＳＩＷ２００は、誘電体１ａと、誘電体１ａのプラスＹ軸方向の面に設けられる導体層２１と、誘電体１ａのマイナスＹ軸方向の面に設けられる導体層２２と、誘電体１ａに設けられる複数の導体柱２０とによって構成される。同軸コネクタ７のコネクタ端子７ａは、同軸－ＳＩＷ変換器６を介して、ＳＩＷ２００に接続される。　 The SIW 200 is provided on the dielectric 1a, the conductor layer 21 provided on the positive Y-axis direction surface of the dielectric 1a, the conductor layer 22 provided on the negative Y-axis direction surface of the dielectric 1a, and the dielectric 1a. It is composed of a plurality of conductor columns 20. The connector terminal 7a of the coaxial connector 7 is connected to the SIW200 via the coaxial-SIW converter 6.
導体柱２０は、導体層２１から導体層２２に向かって伸びて、導体層２１及び導体層２２を電気的に接続する中実又は中空の柱状導電体である。導体柱２０は、ＳＩＷ２００中を伝搬する高周波信号が外部に漏洩しない間隔で複数配列されている。　 The conductor column 20 is a solid or hollow columnar conductor that extends from the conductor layer 21 toward the conductor layer 22 and electrically connects the conductor layer 21 and the conductor layer 22. A plurality of conductor columns 20 are arranged at intervals so that high-frequency signals propagating in SIW 200 do not leak to the outside.
導体層２１及び導体層２２の材料には、例えば、金、銀、銅、アルミニウム、白金、クロムなどが用いられる。導体層２１及び導体層２２のそれぞれの厚さは、０．０９μｍ以上が好ましく、０．３５μｍ以上がより好ましい。また、導体層２１及び導体層２２のそれぞれの厚さは、１１０μｍ以下が好ましい。導体層２１及び導体層２２のそれぞれの厚さが上記範囲内であれば、アンテナ素子のアンテナ利得を高めることができる。　 As the material of the conductor layer 21 and the conductor layer 22, for example, gold, silver, copper, aluminum, platinum, chromium and the like are used. The thickness of each of the conductor layer 21 and the conductor layer 22 is preferably 0.09 μm or more, more preferably 0.35 μm or more. The thickness of each of the conductor layer 21 and the conductor layer 22 is preferably 110 μm or less. When the thickness of each of the conductor layer 21 and the conductor layer 22 is within the above range, the antenna gain of the antenna element can be increased.
折り返し部１２の端部１３には、複数の導体柱２３と導体層２４とが形成される。導体層２４は、折り返し部１２の接地導体２側とは反対側の面に設けられる。導体層２４は、コネクタ接続部１１の導体層２１と対向した位置に設けられ、導体層２１に接している。導体層２４の材料は、例えば、金、銀、銅、アルミニウム、白金、クロムなどが用いられる。　 A plurality of conductor columns 23 and a conductor layer 24 are formed at the end portion 13 of the folded portion 12. The conductor layer 24 is provided on the surface of the folded-back portion 12 opposite to the ground conductor 2 side. The conductor layer 24 is provided at a position facing the conductor layer 21 of the connector connecting portion 11, and is in contact with the conductor layer 21. As the material of the conductor layer 24, for example, gold, silver, copper, aluminum, platinum, chromium and the like are used.
導体柱２３は、接地導体２から導体層２４に向かって伸びて、接地導体２及び導体層２４を電気的に接続する中実又は中空の柱状導電体である。　 The conductor column 23 is a solid or hollow columnar conductor that extends from the ground conductor 2 toward the conductor layer 24 and electrically connects the ground conductor 2 and the conductor layer 24.
接地導体２と、導体柱２３と、導体層２４と、導体層２１と、導体柱２０と、コネクタ接続部１１の導体層２２とによって、閉ループのグランドが形成される。この閉ループのグランドを構成する導体層２４及び導体層２１の互いの接触状態を維持するため、締結部材２７が用いられる。　 A closed loop ground is formed by the grounding conductor 2, the conductor column 23, the conductor layer 24, the conductor layer 21, the conductor column 20, and the conductor layer 22 of the connector connecting portion 11. A fastening member 27 is used to maintain the contact state between the conductor layer 24 and the conductor layer 21 forming the ground of the closed loop.
締結部材２７は、例えば、折り返し部１２からコネクタ接続部１１に向かって貫通するねじと、当該ねじが締め込まれるナットとを組み合わせたものなどを例示できる。締結部材２７を用いることにより、折り返し部１２の導体層２４がコネクタ接続部１１の導体層２１に密着する。　 The fastening member 27 may be, for example, a combination of a screw penetrating from the folded-back portion 12 toward the connector connecting portion 11 and a nut into which the screw is tightened. By using the fastening member 27, the conductor layer 24 of the folded-back portion 12 comes into close contact with the conductor layer 21 of the connector connecting portion 11.
高周波シールド構造１００Ｃによれば、ＳＩＷ２００を利用して、コネクタ接続部１１及び折り返し部１２によって形成される包状体に、閉ループのグランドを設けることができる。なお、同軸－ＳＩＷ変換器６が形成された従来のフレキシブル基板では、折り返し部１２が設けられていないため、同軸－ＳＩＷ変換器６などに伝送される信号の使用周波数が、当該フレキシブル基板の周囲に存在する機器に影響を与える虞がある、また、従来のフレキシブル基板では、当該使用周波数における不要な放射電力によって、周囲に存在する機器に影響を与える虞がある。また、周囲に存在する機器による影響も懸念される。これに対して、高周波シールド構造１００Ｃでは折り返し部１２が設けられているため、このような問題を解決できる。また、高周波シールド構造１００Ｃによれば、ＳＩＷ２００の導体層２１に折り返し部１２の導体層２４を接続することで、閉ループのグランドを形成できるため、コネクタ端子７ａの開放部の先に接続されるアンテナの放射パターンに影響を与え難い。　 According to the high frequency shield structure 100C, SIW200 can be used to provide a closed loop gland on the envelope formed by the connector connecting portion 11 and the folded portion 12. Since the conventional flexible board on which the coaxial-SIW converter 6 is formed does not have the folded-back portion 12, the frequency used for the signal transmitted to the coaxial-SIW converter 6 or the like is around the flexible board. In addition, in the conventional flexible substrate, there is a risk of affecting the devices existing in the surroundings due to unnecessary radiated power at the operating frequency. In addition, there is concern about the influence of surrounding devices. On the other hand, since the high frequency shield structure 100C is provided with the folded-back portion 12, such a problem can be solved. Further, according to the high-frequency shield structure 100C, by connecting the conductor layer 24 of the folded-back portion 12 to the conductor layer 21 of the SIW200, a closed loop ground can be formed, so that the antenna connected to the tip of the open portion of the connector terminal 7a It is difficult to affect the radiation pattern of.
なお高周波シールド構造１００Ｃの構成は、高周波シールド構造１００Ａ及び高周波シールド構造１００Ｂに組み合わせることも可能である。 The configuration of the high frequency shield structure 100C can also be combined with the high frequency shield structure 100A and the high frequency shield structure 100B.
　図９は本発明の実施の形態に係る高周波シールド構造の第４変形例の断面図である。図１０は図９に示す高周波シールド構造をＸＺ平面で平面視した図である。高周波シールド構造１００Ｃと同様の構成及び効果についての説明は、上述の説明を援用することで省略又は簡略する。第４変形例の高周波シールド構造１００Ｄは、締結部材２７に代えて、はんだ２６が用いられる。 FIG. 9 is a cross-sectional view of a fourth modification of the high frequency shield structure according to the embodiment of the present invention. FIG. 10 is a plan view of the high frequency shield structure shown in FIG. 9 in the XZ plane. The description of the same configuration and effect as the high frequency shield structure 100C will be omitted or simplified by referring to the above description. In the high frequency shield structure 100D of the fourth modification, solder 26 is used instead of the fastening member 27.
　折り返し部１２の端部寄りの領域には、複数の穴２５が形成される。複数の穴２５のそれぞれは、折り返し部１２側の接地導体２から導体層２４に向かって貫通する。この穴２５に、はんだ２６が設けられることにより、折り返し部１２側の接地導体２が導体層２４と電気的に接続される。接地導体２と、はんだ２６と、導体層２４と、導体層２１と、導体柱２０とによって、閉ループのグランドが形成される。 A plurality of holes 25 are formed in the region near the end of the folded-back portion 12. Each of the plurality of holes 25 penetrates from the ground conductor 2 on the folded-back portion 12 side toward the conductor layer 24. By providing the solder 26 in the hole 25, the ground conductor 2 on the folded-back portion 12 side is electrically connected to the conductor layer 24. A closed loop ground is formed by the grounding conductor 2, the solder 26, the conductor layer 24, the conductor layer 21, and the conductor column 20.
高周波シールド構造１００Ｄによれば、高周波シールド構造１００Ｃと同様の効果を得ることができると共に、締結部材２７が不要なため、構成が簡素化されて高周波シールド構造１００Ｄを信頼性が向上する。また、締結部材２７が利用されないため、例えば締結部材２７の増し締めなどが不要になり、メンテナンスコストの上昇を抑制できる。 According to the high frequency shield structure 100D, the same effect as that of the high frequency shield structure 100C can be obtained, and since the fastening member 27 is unnecessary, the configuration is simplified and the reliability of the high frequency shield structure 100D is improved. Further, since the fastening member 27 is not used, for example, retightening of the fastening member 27 becomes unnecessary, and an increase in maintenance cost can be suppressed.
　図１１は本発明の実施の形態に係る高周波シールド構造の第５変形例の断面図である。高周波シールド構造１００Ｃと同様の構成及び効果についての説明は、上述の説明を援用することで省略又は簡略する。第５変形例の高周波シールド構造１００Ｅでは、折り返し部１２の端部１３寄りの領域に、折り返し部３０が形成されている。 FIG. 11 is a cross-sectional view of a fifth modification of the high frequency shield structure according to the embodiment of the present invention. The description of the same configuration and effect as the high frequency shield structure 100C will be omitted or simplified by referring to the above description. In the high-frequency shield structure 100E of the fifth modification, the folded-back portion 30 is formed in the region of the folded-back portion 12 near the end portion 13.
　折り返し部３０は、折り返し部１２の端部１３寄りの領域を、矢印Ｂの方向に折り返すことにより形成される。すなわち、折り返し部１２の外側に設けられる接地導体２が、コネクタ接続部１１に設けられる導体層２１に接するように、折り返し部１２の端部１３が折り返される。これにより、折り返し部１２に設けられる接地導体２の一部が、導体層２１に接することで、閉ループのグランドが形成される。 The folded-back portion 30 is formed by folding back the region of the folded-back portion 12 near the end portion 13 in the direction of the arrow B. That is, the end portion 13 of the folded-back portion 12 is folded back so that the grounding conductor 2 provided on the outside of the folded-back portion 12 is in contact with the conductor layer 21 provided on the connector connecting portion 11. As a result, a part of the grounding conductor 2 provided in the folded-back portion 12 comes into contact with the conductor layer 21, and a closed loop ground is formed.
高周波シールド構造１００Ｅによれば、図７に示す導体柱２３などを設けなくても閉ループのグランドを設けることができ、構造が簡素化されて信頼性が向上する。　 According to the high-frequency shield structure 100E, a closed-loop ground can be provided without providing the conductor column 23 or the like shown in FIG. 7, and the structure is simplified and reliability is improved.
図１２Ａは本発明の実施の形態に係る高周波シールド構造の第６変形例をＸＺ平面で平面視した図である。図１２Ｂは第６変形例に係るフレキシブル基板の斜視図である。高周波シールド構造１００Ｃと同様の構成及び効果についての説明は、上述の説明を援用することで省略又は簡略する。第６変形例の高周波シールド構造１００Ｆは、高周波シールド構造１００Ｃの構成に加えて、２つの閉塞部材５１を備える。　 FIG. 12A is a plan view of a sixth modification of the high frequency shield structure according to the embodiment of the present invention in the XZ plane. FIG. 12B is a perspective view of the flexible substrate according to the sixth modification. The description of the same configuration and effect as the high frequency shield structure 100C will be omitted or simplified by referring to the above description. The high-frequency shield structure 100F of the sixth modification includes two closing members 51 in addition to the configuration of the high-frequency shield structure 100C.
閉塞部材５１は、コネクタ接続部１１及び折り返し部１２によって形成される包状体の内側の空間８のＺ軸方向の開口部５０を閉塞するための部材である。閉塞部材５１は、フレキシブル基板１が備える接地導体２と同様の接地導体を備えるものとする。閉塞部材５１は、例えば、フレキシブル基板１の一部を利用することができ、例えば、折り返し部１２からＺ軸方向に伸びている。　 The closing member 51 is a member for closing the opening 50 in the Z-axis direction of the space 8 inside the package formed by the connector connecting portion 11 and the folded portion 12. The closing member 51 includes a grounding conductor similar to the grounding conductor 2 included in the flexible substrate 1. The closing member 51 can utilize, for example, a part of the flexible substrate 1, and extends from the folded-back portion 12 in the Z-axis direction, for example.
図１２Ｂには、折り返し部１２と一体に形成される閉塞部材５１が折り曲げられる前の状態が示される。この閉塞部材５１を、開口部５０が閉塞するように、矢印Ｃの方向に折り曲げることにより、図１２Ａに示す高周波シールド構造１００Ｆが形成される。　 FIG. 12B shows a state before the closing member 51 formed integrally with the folded-back portion 12 is bent. The high frequency shield structure 100F shown in FIG. 12A is formed by bending the closing member 51 in the direction of the arrow C so that the opening 50 is closed.
折り曲げられた閉塞部材５１は、例えば締結部材４０によって、高周波シールド構造１００Ｆを取り付ける機器の筐体などに固定される。　 The bent closing member 51 is fixed to the housing of the device to which the high-frequency shield structure 100F is attached by, for example, the fastening member 40.
なお、閉塞部材５１は、開口部５０の一部を閉塞するように構成してもよいし、開口部５０の全体を閉塞するように構成してもよい。開口部５０の一部を閉塞する場合、開口部５０と閉塞部材５１との間の隙間の寸法は、前述した長さＬ以下の値に設定することが好ましい。また、閉塞部材５１は、フレキシブル基板１とは別体の部材を準備しておき、この部材を利用してもよい。　 The closing member 51 may be configured to close a part of the opening 50, or may be configured to close the entire opening 50. When partially closing the opening 50, the dimension of the gap between the opening 50 and the closing member 51 is preferably set to a value equal to or less than the length L described above. Further, as the closing member 51, a member separate from the flexible substrate 1 may be prepared and this member may be used.
高周波シールド構造１００Ｆによれば、コネクタ接続部１１及び折り返し部１２によって形成される包状体のＺ軸方向に形成される開口部５０の少なくとも一部が閉塞されるため、不要放射がより一層抑制される。なお、フレキシブル基板１とは別体の部材を閉塞部材５１として利用する場合、当該部材の４つの辺をフレキシブル基板１に固定する必要がある。これに対して、高周波シールド構造１００Ｆによれば、折り返し部１２と一体に形成される閉塞部材５１を利用することで、例えば閉塞部材５１の３つの辺を、フレキシブル基板１に固定するだけで高周波シールド構造１００Ｆを得ることができる。そのため、固定に伴う作業量が少なくなり、高周波シールド構造１００Ｆの組立工数が減り、高周波シールド構造１００Ｆを低コストに製造できる。　 According to the high-frequency shield structure 100F, at least a part of the opening 50 formed in the Z-axis direction of the package formed by the connector connecting portion 11 and the folded portion 12 is closed, so that unnecessary radiation is further suppressed. Will be done. When a member separate from the flexible substrate 1 is used as the closing member 51, it is necessary to fix the four sides of the member to the flexible substrate 1. On the other hand, according to the high-frequency shield structure 100F, by using the closing member 51 integrally formed with the folded-back portion 12, for example, only three sides of the closing member 51 are fixed to the flexible substrate 1 to obtain a high frequency. A shield structure 100F can be obtained. Therefore, the amount of work required for fixing is reduced, the number of man-hours for assembling the high-frequency shield structure 100F is reduced, and the high-frequency shield structure 100F can be manufactured at low cost.
なお、高周波シールド構造１００Ｆの閉塞構造は、高周波シールド構造１００～高周波シールド構造１００Ｄに組み合わせることも可能である。 The closed structure of the high frequency shield structure 100F can be combined with the high frequency shield structure 100 to the high frequency shield structure 100D.
　図１３は本発明の実施の形態に係る高周波シールド構造の第７変形例の断面図である。高周波シールド構造１００Ｄと同様の構成及び効果についての説明は、上述の説明を援用することで省略又は簡略する。第７変形例の高周波シールド構造１００Ｇは、高周波シールド構造１００Ｄの構成に加え、電波吸収体５２を備える。 FIG. 13 is a cross-sectional view of a seventh modification of the high frequency shield structure according to the embodiment of the present invention. The description of the same configuration and effect as the high frequency shield structure 100D will be omitted or simplified by referring to the above description. The high-frequency shield structure 100G of the seventh modification includes a radio wave absorber 52 in addition to the configuration of the high-frequency shield structure 100D.
　電波吸収体５２は、コネクタ端子７ａをＹ軸方向に延長した仮想線ＶＬ上において、例えば、折り返し部１２の端面１２ａに固定される。電波吸収体は、例えばエコソーブ（登録商標）を例示できる。 The radio wave absorber 52 is fixed to, for example, the end surface 12a of the folded-back portion 12 on the virtual line VL extending the connector terminal 7a in the Y-axis direction. As the radio wave absorber, for example, Ecosorb (registered trademark) can be exemplified.
図１４Ａは本発明の実施の形態に係る高周波シールド構造による効果を説明するための比較例の筐体モデルの斜視図である。筐体モデル１００’（比較例）は、例えば図７の高周波シールド構造１００Ｃから折り返し部１２を省いた高周波シールド構造である。　 FIG. 14A is a perspective view of a housing model of a comparative example for explaining the effect of the high frequency shield structure according to the embodiment of the present invention. The housing model 100'(comparative example) is, for example, a high-frequency shield structure in which the folded-back portion 12 is omitted from the high-frequency shield structure 100C of FIG.
図１４Ａのモデルの設定値は、図７において、
　　コネクタ接続部１１のＺ軸方向の長さＬ１：２２ｍｍ
　　誘電体１ａの比誘電率：２．０
　　導体層２１の厚さ：４３μｍ
　　導体層２２の厚さ：４３μｍ
　　接地導体２の厚さ：４３μｍ
　　信号線導体４の厚さ：４３μｍとした。 The set values of the model of FIG. 14A are shown in FIG.
Length of connector connection 11 in the Z-axis direction L 1 : 22 mm
Relative permittivity of dielectric 1a: 2.0
Thickness of conductor layer 21: 43 μm
Thickness of conductor layer 22: 43 μm
Thickness of ground conductor 2: 43 μm
The thickness of the signal line conductor 4 was set to 43 μm.
図１４Ｂは図１４ＡのモデルによるＳパラメータのシミュレーション結果の一例を示す図である。縦軸はＳパラメータ、横軸は周波数である。Ｓパラメータは、同軸コネクタから見た同軸コネクタへ反射する電力と、マイクロストリップ線路からＳＩＷへ抜ける電力との比率を表す。実線のＳ１１は、同軸コネクタから見た同軸コネクタへ反射する電力、破線のＳ２１は、同軸コネクタからＳＩＷへ通過する電力を表す。図１４Ｂより、周波数２８ＧＨｚ付近において、反射電力が小さく、通過電力が約０ｄＢで通過していることが分かる。　 FIG. 14B is a diagram showing an example of the simulation result of the S parameter by the model of FIG. 14A. The vertical axis is the S parameter, and the horizontal axis is the frequency. The S parameter represents the ratio of the power reflected from the coaxial connector to the coaxial connector to the power flowing out from the microstrip line to the SIW. The solid line S11 represents the power reflected from the coaxial connector to the coaxial connector, and the broken line S21 represents the power passing from the coaxial connector to the SIW. From FIG. 14B, it can be seen that the reflected power is small and the passing power passes at about 0 dB in the vicinity of the frequency of 28 GHz.
図１４Ｃは図１４Ａのモデルの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。縦軸は高周波シールド構造から放射される電力合計値、横軸は周波数である。本比較例では、折り返し部１２が設けられていないため、２０ＧＨｚ以下の領域では、同軸－ＳＩＷ変換器として機能しておらず放射していないが、２０ＧＨｚ以上の高い領域では放射している。　 FIG. 14C is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of the model of FIG. 14A. The vertical axis is the total power radiated from the high frequency shield structure, and the horizontal axis is the frequency. In this comparative example, since the folded-back portion 12 is not provided, it does not function as a coaxial-SIW converter and does not radiate in the region of 20 GHz or less, but it radiates in the high region of 20 GHz or more.
図１４Ｄは図１４Ａのモデルの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。縦軸は２８ＧＨｚにおける特定の角度でのアンテナゲイン、横軸は球面座標系の角度を表す。実線は、マイナスＹ軸方向からプラスＹ軸方向に向かうＹＺ平面の角度におけるアンテナゲインをプロットしたものである。破線は、マイナスＸ軸方向からプラスＸ軸方向に向かうＸＹ平面の角度におけるアンテナゲインをプロットしたものである。　 FIG. 14D is a diagram showing an example of the simulation result of the antenna gain when the high frequency shield structure of the model of FIG. 14A is used. The vertical axis represents the antenna gain at a specific angle at 28 GHz, and the horizontal axis represents the angle of the spherical coordinate system. The solid line is a plot of the antenna gain at the angle of the YZ plane from the minus Y axis direction to the plus Y axis direction. The broken line is a plot of the antenna gain at the angle of the XY plane from the minus X axis direction to the plus X axis direction.
図１５Ａは本発明の実施の形態に係る高周波シールド構造による第１の効果を説明するためのモデルの斜視図である。図１５Ａには、図７の高周波シールド構造１００Ｃが模式的に示される。図１５Ａの高周波シールド構造は、図１４Ａのモデルに折り返し部１２を追加したものである。図１５Ａの高周波シールド構造では、長さＬが、不要放射を抑圧した周波数帯の中心周波数での波長の１／２波長よりも長いものとする。　 FIG. 15A is a perspective view of a model for explaining the first effect of the high frequency shield structure according to the embodiment of the present invention. FIG. 15A schematically shows the high frequency shield structure 100C of FIG. The high-frequency shield structure of FIG. 15A is obtained by adding a folded portion 12 to the model of FIG. 14A. In the high-frequency shield structure of FIG. 15A, the length L is longer than 1/2 wavelength of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed.
図１５Ａの高周波シールド構造の設定値は、
　　コネクタ接続部１１のＺ軸方向の長さＬ１：２２ｍｍ
　　折り返し部１２のＸ軸方向の長さＬ２：８．５ｍｍ
　　折り返し部１２のＹ軸方向の高さＬ３：２ｍｍ
　　誘電体１ａの比誘電率：２．０
　　導体層２１の厚さ：４３μｍ
　　導体層２２の厚さ：４３μｍ
　　接地導体２の厚さ：４３μｍ
　　信号線導体４の厚さ：４３μｍとした。 The set value of the high frequency shield structure of FIG. 15A is
Length of connector connection 11 in the Z-axis direction L 1 : 22 mm
Length of folded portion 12 in the X-axis direction L 2 : 8.5 mm
Height of folded portion 12 in the Y-axis direction L 3 : 2 mm
Relative permittivity of dielectric 1a: 2.0
Thickness of conductor layer 21: 43 μm
Thickness of conductor layer 22: 43 μm
Thickness of ground conductor 2: 43 μm
The thickness of the signal line conductor 4 was set to 43 μm.
図１５Ｂは図１５Ａの高周波シールド構造によるＳパラメータのシミュレーション結果の一例を示す図である。図１５Ｂには、図１４Ｂと同様、Ｓパラメータが示される。図１５Ｂより、図１４Ｂと同様のシミュレーション結果が得られることから、折り返し部１２を設けたことによる影響はないことが分かる。　 FIG. 15B is a diagram showing an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 15A. FIG. 15B shows S-parameters, similar to FIG. 14B. From FIG. 15B, since the same simulation result as in FIG. 14B can be obtained, it can be seen that there is no influence due to the provision of the folded portion 12.
図１５Ｃは図１５Ａの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。図１５Ｃには、図１４Ｃと同様、放射電力合計値が示される。　 FIG. 15C is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of FIG. 15A. FIG. 15C shows the total radiated power value as in FIG. 14C.
図１５Ａの高周波シールド構造では、コネクタ接続部１１及び折り返し部１２により形成される開口部から電波が放射されるため、放射電力合計値は、図１４Ｃと同様のシミュレーション結果が得られる。　 In the high-frequency shield structure of FIG. 15A, radio waves are radiated from the openings formed by the connector connecting portion 11 and the folded-back portion 12, so that the total radiated power value is the same simulation result as in FIG. 14C.
図１５Ｄは図１５Ａの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。図１５Ｄには、図１４Ｄと同様、放射電力合計値が示される。　 FIG. 15D is a diagram showing an example of an antenna gain simulation result when the high frequency shield structure of FIG. 15A is used. FIG. 15D shows the total radiated power value as in FIG. 14D.
図１５Ａの高周波シールド構造では、折り返し部１２が設けられるため、コネクタ端子７ａをＹ軸方向に延長した仮想線ＶＬの延伸方向、すなわち０°方向へ放射される不要電波が抑制される。そのため、当該方向へのアンテナゲインが大幅に低下する。　 In the high-frequency shield structure of FIG. 15A, since the folded-back portion 12 is provided, unnecessary radio waves radiated in the extending direction of the virtual line VL extending the connector terminal 7a in the Y-axis direction, that is, in the 0 ° direction are suppressed. Therefore, the antenna gain in that direction is significantly reduced.
図１６Ａは本発明の実施の形態に係る高周波シールド構造による第２の効果を説明するためのモデルの斜視図である。図１６Ａには、図１２Ａの高周波シールド構造１００Ｆが模式的に示される。　 FIG. 16A is a perspective view of a model for explaining the second effect of the high frequency shield structure according to the embodiment of the present invention. FIG. 16A schematically shows the high frequency shield structure 100F of FIG. 12A.
図１６Ａの高周波シールド構造は、図１５Ａのモデルに閉塞部材５１を追加したものである。図１６Ａの高周波シールド構造では、図１５Ａのモデルと同様に、長さＬが、不要放射を抑圧した周波数帯の中心周波数での波長の１／２波長よりも長いものとする。　 The high-frequency shield structure of FIG. 16A is obtained by adding the closing member 51 to the model of FIG. 15A. In the high-frequency shield structure of FIG. 16A, the length L is longer than 1/2 wavelength of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed, as in the model of FIG. 15A.
図１６Ａの高周波シールド構造の設定値は、
　　コネクタ接続部１１のＺ軸方向の長さＬ１：２２ｍｍ
　　折り返し部１２のＸ軸方向の長さＬ２：８．５ｍｍ
　　折り返し部１２のＹ軸方向の高さＬ３：２ｍｍ
　　誘電体１ａの比誘電率：２．０
　　導体層２１の厚さ：４３μｍ
　　導体層２２の厚さ：４３μｍ
　　接地導体２の厚さ：４３μｍ
　　信号線導体４の厚さ：４３μｍとした。 The set value of the high frequency shield structure of FIG. 16A is
Length of connector connection 11 in the Z-axis direction L 1 : 22 mm
Length of folded portion 12 in the X-axis direction L 2 : 8.5 mm
Height of folded portion 12 in the Y-axis direction L 3 : 2 mm
Relative permittivity of dielectric 1a: 2.0
Thickness of conductor layer 21: 43 μm
Thickness of conductor layer 22: 43 μm
Thickness of ground conductor 2: 43 μm
The thickness of the signal line conductor 4 was set to 43 μm.
図１６Ｂは図１６Ａの高周波シールド構造によるＳパラメータのシミュレーション結果の一例を示す図である。図１６Ｂより、図１５Ｂと同様のシミュレーション結果が得られる。　 FIG. 16B is a diagram showing an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 16A. From FIG. 16B, the same simulation result as in FIG. 15B can be obtained.
図１６Ｃは図１６Ａの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。図１６Ａの高周波シールド構造では、閉塞部材５１が追加されているため、開口部からの放射電波が抑制されるため、放射電力合計値が大幅に抑制される。　 FIG. 16C is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of FIG. 16A. In the high-frequency shield structure of FIG. 16A, since the closing member 51 is added, the radiated radio wave from the opening is suppressed, so that the total radiated power value is significantly suppressed.
図１６Ｄは図１６Ａの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。図１６Ａの高周波シールド構造では、閉塞部材５１が追加されているため、コネクタ端子７ａをＹ軸方向に延長した仮想線ＶＬの延伸方向、すなわち０°方向へ放射される不要電波が抑制され、さらに当該方向以外の方向へ放射される不要電波も抑制されるため、あらゆる方向へのアンテナゲインが大幅に低下する。　 FIG. 16D is a diagram showing an example of an antenna gain simulation result when the high frequency shield structure of FIG. 16A is used. In the high-frequency shield structure of FIG. 16A, since the closing member 51 is added, unnecessary radio waves radiated in the extending direction of the virtual line VL extending the connector terminal 7a in the Y-axis direction, that is, in the 0 ° direction are suppressed, and further. Since unnecessary radio waves radiated in directions other than that direction are also suppressed, the antenna gain in all directions is significantly reduced.
図１７Ａは本発明の実施の形態に係る高周波シールド構造による第３の効果を説明するための第１モデルの斜視図である。図１７Ｂは図１７Ａの高周波シールド構造をＸＹ平面で平面視した図である。図１７Ａ及び図１７Ｂには、前述した長さＬによる効果を説明するための高周波シールド構造が示される。　 FIG. 17A is a perspective view of a first model for explaining a third effect of the high frequency shield structure according to the embodiment of the present invention. FIG. 17B is a plan view of the high frequency shield structure of FIG. 17A in the XY plane. 17A and 17B show a high frequency shield structure for explaining the effect of the length L described above.
図１７Ａの高周波シールド構造は、同軸コネクタの位置を９０°反時計回り方向に移動させて、折り返し部１２の形状を変形したものである。当該高周波シールド構造では、長さＬが、不要放射を抑圧した周波数帯の中心周波数での波長の１／２波長よりも長いものとする。また、当該高周波シールド構造には、閉塞部材５１が設けられていない。　 The high-frequency shield structure of FIG. 17A is obtained by moving the position of the coaxial connector in the counterclockwise direction by 90 ° to deform the shape of the folded-back portion 12. In the high frequency shield structure, the length L is longer than 1/2 wavelength of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed. Further, the high frequency shield structure is not provided with the closing member 51.
当該高周波シールド構造の設定値は、
　　コネクタ接続部１１のＺ軸方向の長さＬ１：２２ｍｍ
　　折り返し部１２のＸ軸方向の長さＬ２：４ｍｍ
　　折り返し部１２のＹ軸方向の高さＬ３：８．５ｍｍ
　　誘電体１ａの比誘電率：２．０
　　導体層２１の厚さ：４３μｍ
　　導体層２２の厚さ：４３μｍ
　　接地導体２の厚さ：４３μｍ
　　信号線導体４の厚さ：４３μｍとした。 The set value of the high frequency shield structure is
Length of connector connection 11 in the Z-axis direction L 1 : 22 mm
Length of folded portion 12 in the X-axis direction L 2 : 4 mm
Height of the folded-back portion 12 in the Y-axis direction L 3 : 8.5 mm
Relative permittivity of dielectric 1a: 2.0
Thickness of conductor layer 21: 43 μm
Thickness of conductor layer 22: 43 μm
Thickness of ground conductor 2: 43 μm
The thickness of the signal line conductor 4 was set to 43 μm.
図１７Ｃは図１７Ａの高周波シールド構造によるＳパラメータのシミュレーション結果の一例を示す図である。図１７Ｄは図１７Ａの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。図１７Ｅは図１７Ａの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。図１７Ｃ、図１７Ｄ及び図１７Ｅより、図１５Ｂ、図１５Ｃ及び図１５Ｄと同様のシミュレーション結果が得られる。　 FIG. 17C is a diagram showing an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 17A. FIG. 17D is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of FIG. 17A. FIG. 17E is a diagram showing an example of an antenna gain simulation result when the high frequency shield structure of FIG. 17A is used. From FIGS. 17C, 17D and 17E, simulation results similar to those of FIGS. 15B, 15C and 15D can be obtained.
図１８Ａは本発明の実施の形態に係る高周波シールド構造による第３の効果を説明するための第２モデルの斜視図である。図１８Ｂは図１８Ａの高周波シールド構造をＸＹ平面で平面視した図である。　 FIG. 18A is a perspective view of a second model for explaining the third effect of the high frequency shield structure according to the embodiment of the present invention. FIG. 18B is a plan view of the high frequency shield structure of FIG. 18A in the XY plane.
図１８Ａ及び図１８Ｂには、図１７ＢのＬ３を短くすることで、長さＬが、不要放射を抑圧した周波数帯の中心周波数での波長の１／２波長未満とした高周波シールド構造が示される。　 18A and 18B show a high-frequency shield structure in which L 3 in FIG. 17B is shortened so that the length L is less than 1/2 of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed. Is done.
当該高周波シールド構造の設定値は、
　　コネクタ接続部１１のＺ軸方向の長さＬ１：２２ｍｍ
　　折り返し部１２のＸ軸方向の長さＬ２：４ｍｍ
　　折り返し部１２のＹ軸方向の高さＬ３：４．５ｍｍ
　　誘電体１ａの比誘電率：２．０
　　導体層２１の厚さ：４３μｍ
　　導体層２２の厚さ：４３μｍ
　　接地導体２の厚さ：４３μｍ
　　信号線導体４の厚さ：４３μｍとした。 The set value of the high frequency shield structure is
Length of connector connection 11 in the Z-axis direction L 1 : 22 mm
Length of folded portion 12 in the X-axis direction L 2 : 4 mm
Height of folded-back portion 12 in the Y-axis direction L 3 : 4.5 mm
Relative permittivity of dielectric 1a: 2.0
Thickness of conductor layer 21: 43 μm
Thickness of conductor layer 22: 43 μm
Thickness of ground conductor 2: 43 μm
The thickness of the signal line conductor 4 was set to 43 μm.
図１８Ｃは図１８Ａの高周波シールド構造によるＳパラメータのシミュレーション結果の一例を示す図である。図１８Ｄは図１８Ａの高周波シールド構造から放射される電力のシミュレーション結果の一例を示す図である。図１８Ｅは図１８Ａの高周波シールド構造を用いた場合のアンテナゲインのシミュレーション結果の一例を示す図である。図１８Ｃのシミュレーション結果は、図１７Ｃと同等であるが、図１８Ｄ及び図１８Ｅより、長さＬを短くしたことで、電力合計値とアンテナゲインが大幅に低減されることが分かる。 FIG. 18C is a diagram showing an example of the simulation result of the S parameter by the high frequency shield structure of FIG. 18A. FIG. 18D is a diagram showing an example of a simulation result of electric power radiated from the high frequency shield structure of FIG. 18A. FIG. 18E is a diagram showing an example of a simulation result of the antenna gain when the high frequency shield structure of FIG. 18A is used. The simulation result of FIG. 18C is the same as that of FIG. 17C, but it can be seen from FIGS. 18D and 18E that the total power value and the antenna gain are significantly reduced by shortening the length L.
　以上の実施の形態に示した構成は、本発明の内容の一例を示すものであり、別の公知の技術と組み合わせることも可能であるし、本発明の要旨を逸脱しない範囲で、構成の一部を省略、変更することも可能である。 The configuration shown in the above-described embodiment shows an example of the content of the present invention, can be combined with another known technique, and is one of the configurations without departing from the gist of the present invention. It is also possible to omit or change the part.
　本国際出願は、２０１９年９月３０日に出願した日本国特許出願第２０１９－１８０２６１号に基づく優先権を主張するものであり、日本国特許出願第２０１９－１８０２６１号の全内容を本国際出願に援用する。 This international application claims priority based on Japanese Patent Application No. 2019-180261 filed on September 30, 2019, and the entire contents of Japanese Patent Application No. 2019-180261 are included in this international application. Invite to.
１　　　　：フレキシブル基板
１ａ　　　：誘電体
２　　　　：接地導体
４　　　　：信号線導体
４ａ　　　：端部
４ａ１　　：貫通孔
５　　　　：はんだ
６　　　　：同軸－ＳＩＷ変換器
７，７Ａ，７Ｂ　　　：同軸コネクタ
７ａ　　　：コネクタ端子
７ｂ　　　：ケーブル
７ｃ　　　：本体部
８　　　　：空間
９，１０　　　：グランド導体
１０ａ　　：柱状端子
１０ｂ　　：面状端子
１１　　　：コネクタ接続部
１１ａ　　：端面
１１ｂ　　：凹部
１１ｂ１　：底部
１１ｃ　　：端部
１１ｄ　　：貫通孔
１２　　　：折り返し部
１２ａ　　：端面
１３　　　：端部
２０　　　：導体柱
２１，２２　導体層
２３　　　：導体柱
２４　　　：導体層
２５　　　：穴
２６　　　：はんだ
２７　　　：締結部材
３０　　　：折り返し部
４０　　　：締結部材
５０　　　：開口部
５１　　　：閉塞部材
５２　　　：電波吸収体
１００　　：高周波シールド構造
１００’　　筐体モデル
１００Ａ，１００Ｂ，１００Ｃ，１００Ｄ，１００Ｅ，１００Ｆ，１００Ｇ　：高周波シールド構造 1: Flexible substrate 1a: Dielectric 2: Ground conductor 4: Signal line conductor 4a: End 4a 1: Through hole 5: Solder 6: Coaxial- SIW converter 7,7A, 7B: Coaxial connector 7a: Connector terminal 7b: Cable 7c: Main body 8: Spaces 9, 10: Ground conductor 10a: Columnar terminal 10b: Planar terminal 11: Connector connection 11a: End face 11b: Recess 11b 1: Bottom 11c: End 11d: Through hole 12: Folded portion 12a: End face 13: End 20: Conductor column 21 and 22 Conductor layer 23: Conductor column 24: Conductor layer 25: Hole 26: Solder 27: Fastening member 30: Folded portion 40: Fastening member 50: Opening 51: Closing member 52: Radio absorber 100: High frequency shield structure 100'Housing model 100A, 100B, 100C, 100D, 100E, 100F, 100G: High frequency shield structure

Claims (9)

  1. 　フレキシブル基板と、
    　前記フレキシブル基板に接続された同軸コネクタと、
    　を備え、
    　前記フレキシブル基板は、
    　前記同軸コネクタが接続されると共に、前記同軸コネクタの信号線導体であるコネクタ端子が設けられる基板領域であるコネクタ接続部と、
    　前記コネクタ端子を覆うように、前記フレキシブル基板の端部が前記コネクタ接続部側に折り返される基板領域である折り返し部と、
    　前記コネクタ接続部及び前記折り返し部に設けられ、前記コネクタ端子を覆う接地導体と、
    　前記コネクタ接続部側に設けられる前記接地導体と、前記折り返し部側を覆う前記接地導体とを、電気的に接続するグランド導体と、
    　を備える高周波シールド構造。     Flexible board and
    With the coaxial connector connected to the flexible board,
    With
    The flexible substrate is
    A connector connection portion which is a board area where the coaxial connector is connected and a connector terminal which is a signal line conductor of the coaxial connector is provided.
    A folded portion, which is a substrate region in which the end portion of the flexible substrate is folded back toward the connector connecting portion side so as to cover the connector terminal.
    A grounding conductor provided at the connector connecting portion and the folded portion and covering the connector terminal,
    A ground conductor that electrically connects the ground conductor provided on the connector connection side and the ground conductor covering the folded-back side.
    High frequency shield structure with.
  2. 　前記コネクタ接続部及び前記折り返し部によって形成される包状体を覆う前記接地導体２の内側の最大寸法は、不要放射を抑圧した周波数帯の中心周波数での波長の１／２波長以下である請求項１に記載の高周波シールド構造。 Claim that the maximum dimension inside the ground conductor 2 covering the envelope formed by the connector connection portion and the folded portion is ½ wavelength or less of the wavelength at the center frequency of the frequency band in which unnecessary radiation is suppressed. Item 1. The high frequency shield structure according to item 1.
  3. 　前記同軸コネクタは、前記コネクタ接続部及び前記折り返し部によって形成される包状体の内部に設けられる請求項１又は２に記載の高周波シールド構造。 The high-frequency shield structure according to claim 1 or 2, wherein the coaxial connector is provided inside a package formed by the connector connecting portion and the folded portion.
  4. 　前記同軸コネクタは、前記コネクタ接続部の端部に形成される凹部に配置される請求項１又は２に記載の高周波シールド構造。 The high-frequency shield structure according to claim 1 or 2, wherein the coaxial connector is arranged in a recess formed at an end of the connector connection portion.
  5. 　前記コネクタ接続部に形成される基板一体型導波路に前記折り返し部に設けられる前記接地導体が接続されることにより、閉ループのグランドが形成される請求項１～４の何れか一項に記載の高周波シールド構造。 The invention according to any one of claims 1 to 4, wherein a ground of a closed loop is formed by connecting the ground conductor provided at the folded-back portion to the substrate-integrated waveguide formed at the connector connecting portion. High frequency shield structure.
  6. 　前記基板一体型導波路に前記折り返し部に設けられる前記接地導体を接触させる締結部材又ははんだを備える請求項５に記載の高周波シールド構造。 The high-frequency shield structure according to claim 5, wherein the substrate-integrated waveguide is provided with a fastening member or solder that contacts the ground conductor provided at the folded-back portion.
  7. 　前記折り返し部の端部寄りの領域は、前記コネクタ接続部に設けられる導体層に接するように折り返される請求項１～６の何れか一項に記載の高周波シールド構造。 The high-frequency shield structure according to any one of claims 1 to 6, wherein the region near the end of the folded-back portion is folded back so as to be in contact with the conductor layer provided in the connector connecting portion.
  8. 　前記コネクタ接続部及び前記折り返し部によって形成される包状体の内側の空間の開口部を閉塞する閉塞部材を備える請求項１～７の何れか一項に記載の高周波シールド構造。 The high-frequency shield structure according to any one of claims 1 to 7, further comprising a closing member that closes an opening in a space inside the package formed by the connector connecting portion and the folded portion.
  9. 　前記コネクタ端子と対向して前記折り返し部に設けられる電波吸収体を備える請求項１～８の何れか一項に記載の高周波シールド構造。 The high-frequency shield structure according to any one of claims 1 to 8, further comprising a radio wave absorber provided in the folded-back portion facing the connector terminal.
PCT/JP2020/034847 2019-09-30 2020-09-15 High-frequency shield structure WO2021065459A1 (en)

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JP2019180261A JP2022169817A (en) 2019-09-30 2019-09-30 High-frequency shield structure

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Citations (10)

* Cited by examiner, † Cited by third party
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JPS5848499A (en) * 1981-09-17 1983-03-22 住友電気工業株式会社 Electronic circuit
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