WO2021049845A3 - 오버레이 측정장치 - Google Patents

오버레이 측정장치 Download PDF

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Publication number
WO2021049845A3
WO2021049845A3 PCT/KR2020/012096 KR2020012096W WO2021049845A3 WO 2021049845 A3 WO2021049845 A3 WO 2021049845A3 KR 2020012096 W KR2020012096 W KR 2020012096W WO 2021049845 A3 WO2021049845 A3 WO 2021049845A3
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WIPO (PCT)
Prior art keywords
wafer
overlay
measurement device
light source
objective lens
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PCT/KR2020/012096
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English (en)
French (fr)
Other versions
WO2021049845A2 (ko
Inventor
박규남
신현기
이성수
Original Assignee
(주)오로스 테크놀로지
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Priority to CN202080063499.4A priority Critical patent/CN114424019A/zh
Priority to US17/641,602 priority patent/US20220326008A1/en
Priority to JP2022515113A priority patent/JP7280434B2/ja
Publication of WO2021049845A2 publication Critical patent/WO2021049845A2/ko
Publication of WO2021049845A3 publication Critical patent/WO2021049845A3/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0608—Height gauges
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Multimedia (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

본 발명은 오버레이 측정장치에 관한 것이다. 더욱 상세하게는 서로 다른 파장의 광원을 사용하는 자동 초점(Auto focus) 시스템을 구비한 오버레이 측정장치에 관한 것이다. 본 발명은 웨이퍼에 형성된 서로 다른 층들에 각각 형성된 제1 오버레이 마크와 제2 오버레이 마크 사이의 오차를 측정하는 장치로서, 제1 빔을 조사하는 제1 광원과; 상기 제1 광원으로부터 나와서 상기 웨이퍼의 측정위치에서 반사된 상기 제1 빔에 의한 신호를 획득하는 제1 검출기와; 상기 제1 빔과 파장이 다른 제2 빔을 조사하는 제2 광원과; 상기 제2 광원으로부터 나와서 상기 웨이퍼의 상기 측정위치에서 반사된 상기 제2 빔에 의한 신호를 획득하는 제2 검출기와; 상기 제1 빔과 상기 제2 빔을 상기 웨이퍼의 상기 측정위치에 집광시키고, 상기 측정위치에서 반사된 빔을 수집하는 대물렌즈와; 상기 웨이퍼에 대한 상기 대물렌즈의 광축 방향의 상대 위치를 조절하는 액추에이터와; 상기 액추에이터를 제어하는 제어수단과; 상기 웨이퍼에 대한 상기 대물렌즈의 상기 광축 방향의 상대 위치의 변화에 따른 상기 제1 검출기의 신호의 변화를 기초로 상기 제1 오버레이 마크의 높이를 검출하고, 상기 웨이퍼에 대한 상기 대물렌즈의 상기 광축 방향의 상대 위치의 변화에 따른 상기 제2 검출기의 신호의 변화를 기초로 상기 제2 오버레이 마크의 높이를 검출하는 높이 검출수단을 포함하는 오버레이 측정장치를 제공한다.
PCT/KR2020/012096 2019-09-10 2020-09-08 오버레이 측정장치 WO2021049845A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202080063499.4A CN114424019A (zh) 2019-09-10 2020-09-08 套刻测量装置
US17/641,602 US20220326008A1 (en) 2019-09-10 2020-09-08 Overlay measurment device
JP2022515113A JP7280434B2 (ja) 2019-09-10 2020-09-08 オーバーレイ測定装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190111950A KR102273278B1 (ko) 2019-09-10 2019-09-10 오버레이 측정장치
KR10-2019-0111950 2019-09-10

Publications (2)

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WO2021049845A2 WO2021049845A2 (ko) 2021-03-18
WO2021049845A3 true WO2021049845A3 (ko) 2021-06-10

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Country Status (5)

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US (1) US20220326008A1 (ko)
JP (1) JP7280434B2 (ko)
KR (1) KR102273278B1 (ko)
CN (1) CN114424019A (ko)
WO (1) WO2021049845A2 (ko)

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CN113985711B (zh) * 2021-10-28 2024-02-02 无锡卓海科技股份有限公司 一种套刻测量装置
KR102524462B1 (ko) * 2022-03-28 2023-04-21 (주)오로스 테크놀로지 오버레이 측정장치
KR102526522B1 (ko) 2022-11-02 2023-04-27 (주)오로스테크놀로지 포커스를 제어하는 오버레이 계측 장치 및 방법과 이를 위한 프로그램
KR102576639B1 (ko) * 2022-11-09 2023-09-08 (주)오로스테크놀로지 초점 이동을 제어하는 오버레이 계측 장치 및 방법과 이를 위한 프로그램 저장 매체
KR102550408B1 (ko) * 2023-02-14 2023-07-03 (주)오로스 테크놀로지 오버레이 측정장치 및 방법
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JPH08306602A (ja) * 1995-04-27 1996-11-22 Nikon Corp アライメント装置
JPH10122820A (ja) * 1996-10-16 1998-05-15 Nikon Corp パターン間寸法測定装置及び方法
JP2002196223A (ja) * 2000-12-26 2002-07-12 Nikon Corp 光学的位置ずれ検出装置
JP2012094915A (ja) * 2002-09-20 2012-05-17 Asml Netherlands Bv リソグラフィ装置の位置決めシステムおよび方法
KR20130101458A (ko) * 2012-03-05 2013-09-13 캐논 가부시끼가이샤 검출 장치, 노광 장치, 및 디바이스 제조 방법

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Publication number Publication date
US20220326008A1 (en) 2022-10-13
JP7280434B2 (ja) 2023-05-23
KR20210031015A (ko) 2021-03-19
KR102273278B1 (ko) 2021-07-07
CN114424019A (zh) 2022-04-29
JP2023500556A (ja) 2023-01-10
WO2021049845A2 (ko) 2021-03-18

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