WO2021048746A1

WO2021048746A1 - Smart mask and exposure device thereof, exposure method, and exposure pattern forming method

Info

Publication number: WO2021048746A1
Application number: PCT/IB2020/058354
Authority: WO
Inventors: 杨朝舜; 黄靖文
Original assignee: 默司科技股份有限公司
Priority date: 2019-09-10
Filing date: 2020-09-09
Publication date: 2021-03-18
Also published as: CN114631060A; TW202111425A

Abstract

A smart mask (120) and an exposure device (100) thereof, an exposure method, and an exposure pattern forming method. The smart mask (120) comprises a bottom plate (121), a plurality of first micro light-emitting diode assemblies (122) and a protective layer. The plurality of first micro light-emitting diode assemblies (122) are arranged in an array on a base plate (121) of the same size as a traditional mask, so as to determine the light emission state on the basis of control signals received from lines on the base plate (121), thereby defining an exposure pattern. The protective layer covers at least one or more of the plurality of micro light-emitting diode assemblies (122). The size and spacing of the plurality of first micro light-emitting diode assemblies (122) are designed to comply with the line width requirements of the exposure process, and thus the size of the smart mask (120) can comply with the requirements of a mask holding part (130) of the exposure device (100).

Description

Smart photomask and its exposure equipment, exposure method and exposure pattern forming method

The invention belongs to semiconductor manufacturing equipment and methods, in particular to an intelligent photomask with adjustable patterns, and exposure equipment and exposure methods using it.

In the manufacturing process of semiconductor integrated circuits, lithography technology can precisely define specific patterns on the photoresist layer, and then transfer the pattern of the photoresist layer to the semiconductor substrate through an etching process. The required line structure. In a common photolithographic imaging process, it can be divided into the following steps in sequence: photoresist coating, baking, mask defining exposure range, exposure, developing pattern, baking, etc., among which the photoresist layer can be light-sensitive It is formed from a polymer material, so that the difference in the ability to be developed before and after exposure is used to define the pattern of the microstructure.

Different process substrate sizes use different size photomasks. Generally speaking, the photomask size is slightly larger than that of the substrate to be processed. A metal pattern is defined on it as a light source shield to protect the photoresist from exposure to the exposure source.

Generally, the substrate of the photomask itself is film, glass or quartz. The mask manufacturer coats a layer of opaque metal film on the mask substrate and covers it with the photoresist, then uses a high-resolution laser to scan for partial exposure to define the pattern, and then develops the defined photoresist After patterning, metal etching is performed to remove the masked part, so that a photomask can be completed. The general business model is to entrust the mask manufacturer to produce the mask for use after the process executive designs the mask pattern.

Nano-level or micro-level process flow requires multiple different layer stacks to achieve the purpose of structure or multi-layer circuit, so a product often requires multiple masks with different patterns to meet different pattern definition requirements.

The pattern provided by each mask is fixed and cannot be changed. Assuming that there is a product whose manufacturing process requires ten different patterns and structures to be stacked, ten different photomasks may be required to meet the demand, that is, the manufacturing cost of ten photomasks is required.

In addition, due to the long production time and high time cost of the mask, it usually takes several days from the process executor’s design and contract to the production of the mask. After the mask is obtained, the process executor can start the manufacturing process, thus making the production The efficiency of manufacturing is limited.

This summary describes many embodiments of the "invention". However, the term "present invention" is only used to describe certain embodiments disclosed in this specification (regardless of whether they are in the claims), rather than a complete description of all possible embodiments. Certain embodiments described below as various features or aspects of the "invention" may be combined in different ways to form.

The present invention provides a new pattern-adjustable smart mask, and exposure equipment and exposure method using the same, which can reduce the manufacturing cost of the mask in the semiconductor manufacturing process and improve the efficiency of manufacturing, so as to solve the above-mentioned problems.

The pattern-adjustable smart photomask provided by the embodiment of the present invention includes a bottom plate, a plurality of first micro light emitting diode components, and a protective layer. The plurality of first miniature light-emitting diode components are arranged on the bottom plate in an array. The protective layer covers at least one or more of the plurality of micro light emitting diode components. The size of at least one of the plurality of first micro light emitting diode components is between 0.1 micrometer and 100 micrometers, and at least two of the plurality of first micro light emitting diode components are between two adjacent first micro light emitting diode components The distance between the two is between 0.01 microns and 20 microns. The plurality of first micro light emitting diode components determine the light emitting state based on the control signal received from the circuit on the bottom plate, thereby defining the exposure pattern.

The embodiment of the present invention provides an exposure equipment using the smart mask with adjustable patterns, which includes a bearing platform, the smart mask with adjustable patterns, a controller, and a mask clamping part. The bearing platform has a bearing area suitable for setting the object to be exposed. The pattern-adjustable smart photomask includes a plurality of first micro-LED components, wherein each of the first micro-LED components receives a control signal, and determines a light-emitting state based on the received control signal , In order to define the exposure pattern. The controller is electrically connected to the plurality of first miniature light-emitting diode components, and is used for generating the control signal to respectively control the light-emitting state of the plurality of first miniature light-emitting diode components. The photomask clamping portion is configured relative to the carrying platform to fix the smart photomask with adjustable patterns, wherein when the exposure device performs an alignment operation, the photomask clamping portion drives the adjustable The smart mask of the pattern is adjusted to be aligned with the object to be exposed arranged on the carrying area.

An embodiment of the present invention provides an exposure method, which includes aligning a plurality of first micro-LED components (micro-LEDs) formed in an array with a substrate, and aligning the light-emitting surfaces of the plurality of first micro-LED components toward all the first micro-LED components. The substrate; sending a first control signal to the plurality of first micro light emitting diode components, so that the plurality of first micro light emitting diode components light up in response to the control signal and display a first light emitting pattern; and The first light-emitting pattern illuminates the object to be exposed, thereby defining a first exposure pattern on the object to be exposed.

The embodiment of the present invention provides a pattern-adjustable smart photomask suitable for use with exposure equipment. The smart photomask includes a bottom plate, a plurality of first micro light emitting diode components, and a protective layer. The bottom plate is suitable for being arranged on the reticle clamping part of the exposure equipment, and is fixed by the illuminating clamping part. The plurality of first micro light-emitting diode components are arranged in an array on the bottom plate to be lit to display a light-emitting pattern defining an exposure pattern. The protective layer covers at least one or more of the plurality of micro light emitting diode components. The size of at least one of the plurality of first micro light emitting diode components is between 0.1 micron and 20 micrometers, and the number of the plurality of first micro light emitting diode components is set such that the array has a size of between 625 square meters. The luminous area between millimeters and 52,900 square millimeters.

An embodiment of the present invention provides a method for forming an exposure pattern of a smart photomask, in which a minimum analysis unit of the micro light emitting diode assembly array is defined so that the micro light emitting diode assembly array is divided into a plurality of exposure unit regions, each of which is The exposure unit area includes at least one micro light emitting diode assembly; the smart mask includes a plurality of micro light emitting diode assemblies arranged in an array, and the exposure pattern forming method includes: defining a minimum analysis unit of the micro light emitting diode assembly array , So that the micro light emitting diode assembly array is divided into a plurality of exposure unit areas, wherein each of the exposure unit areas includes at least one micro light emitting diode assembly; a visual graphic interface is generated based on the defined minimum analysis unit, wherein The visual graphic interface includes a plurality of selection units, and the plurality of selection units respectively correspond to the areas of the plurality of exposure units; and the parameter setting information is received through the plurality of selection units, and the parameter setting information is based on the parameter setting information. A control signal is sent to adjust the exposure parameters of the micro light-emitting diode components in the corresponding unit area, thereby defining an exposure pattern.

Is a schematic diagram of an exposure system according to some embodiments of the present invention;

with Is a schematic diagram of a smart mask with adjustable pattern according to some embodiments of the present invention;

Is a schematic diagram of the exposure pattern of the pattern-adjustable smart mask according to some embodiments of the present invention;

, with Is a schematic diagram of a partial pattern of a smart mask according to some embodiments of the present invention;

It is a schematic diagram of dark spot compensation of the smart mask of some embodiments of the present invention;

Are schematic diagrams of smart masks with adjustable patterns according to other embodiments of the present invention;

Is a schematic diagram of alignment marks according to some embodiments of FIG. 6;

Is a schematic diagram of a control interface of a pattern-adjustable smart mask according to some embodiments of the present invention; and

Is a flowchart of the steps of the exposure method of some embodiments of the present invention; and

It is a flowchart of the steps of the exposure method according to some embodiments of the present invention.

The present invention proposes a new smart mask with adjustable pattern, and exposure equipment and exposure method using the smart mask to solve the problems mentioned in the background art and the above problems. In order to make the above objectives, features and advantages of the present invention more obvious and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following descriptions of the embodiments of the present invention are for illustrative purposes only, and are not meant to be all the embodiments of the present invention or limit the present invention to specific embodiments. In addition, the same component numbers can be used to represent the same, corresponding or similar components, and are not limited to represent the same components.

In order to more clearly express the inventive concept that this disclosure intends to commend, the size, proportion, and quantity of the components depicted in the drawings of this disclosure may be adjusted, and do not represent the actual implementation state, and are described here first.

In this disclosure, any reference to "first", "second" and other descriptions are only used to describe different components, regions, levels or steps, and are not used to limit the order of the components, regions, levels or steps. (If there are clear requirements for the scope of patent application, this is not the limit).

The terms "approximately" or "substantially" mentioned in this disclosure are used to recognize the numerical error range in the manufacturing process that does not significantly change the operation of a specific component or does not significantly affect the function or purpose of the component. Those who have general knowledge in the field are clear. For example, if the range of "approximately 0.1 to 1" is described, it can essentially include the range of 0%-5% deviation (provided that the operation/purpose/function of the component is not significantly affected).

The terms “connected” or “coupled” mentioned in the present disclosure do not limit that there cannot be any spaced components between the components. That is, the mutual connection or coupling between two components may mean that the two components are directly connected/coupled to each other, or connected/coupled to each other through other components.

The spatial relationship mentioned in this disclosure, such as "above", "below", "upward", "downward", "on the left side", "on the right side", etc. It is an exemplary description based on the relative position presented by the diagram, and is not used to limit the configuration state of the actual product.

Fig. 1 is a schematic diagram of exposure equipment according to some embodiments of the present invention. Please refer to FIG. 1, the exposure apparatus 100 (also referred to as the self-luminous exposure system 100) includes a supporting platform 110, a pattern-adjustable smart mask 120, a controller 130, and a mask clamping part 140.

The carrying platform 110 has a carrying area 112 suitable for setting an object 50 to be exposed, wherein the object 50 to be exposed may be, for example, a wafer or a semiconductor substrate. In some embodiments, the carrying platform 110 can fix the object 50 to be exposed on the carrying area 112 by vacuum suction or mechanical clamping, but the present invention is not limited to this.

The smart light cover 120 includes a plurality of micro light emitting diode components 122 (hereinafter referred to as "micro LED"), wherein each micro LED 122 receives a control signal, and based on the received control signal, determines the light-emitting state (for example, whether to light up, to turn on or not). Bright time, brightness, etc.) to define the exposure pattern. In some embodiments, the smart light cover 120 can also be called a Micro LED array light, which can be, for example, an array composed of a plurality of micro LEDs 122 and directly or indirectly disposed on the bottom plate 121, wherein each micro LED 122 can be The corresponding light-emitting state is independently or regionally selected to control, and a single micro-light-emitting diode component 122 or a single micro-light-emitting diode component 122 array block can form a minimum analysis unit of an exposure process (for example, a yellow light process). A plurality of minimum analysis units will form a corresponding exposure pattern to illuminate the object 50 to be exposed, so that the object 50 to be exposed exhibits a photoresist pattern corresponding to the exposure pattern. It should be noted here that the types of micro light emitting diodes are not limited in the present invention. The configuration embodiment of the smart mask 120 will be further described in detail later.

The controller 130 is electrically connected to the micro LED 122 and used to generate control signals to control the light-emitting state of each micro LED 122 respectively. In some embodiments, the controller 130 may be a matrix circuit provided in the bottom plate of the micro LED 122 to control the brightness and darkness of each micro LED 122.

The reticle clamping portion 140 is configured relative to the carrier platform 110 to fix the smart reticle 120. When the exposure equipment 100 is performing an alignment operation, the reticle clamping portion 140 will drive the smart reticle 120 to be installed on the carrier. The objects 50 to be exposed in the area 112 are aligned. In some embodiments, the photomask clamping portion 140 can be used to fix the smart photomask 120 in a vacuum suction or mechanical clamping manner, but the present invention is not limited to this.

In some embodiments, the exposure apparatus 100 further includes a detector 150. The detector 150 is used to detect whether each micro LED 122 is lit in response to the control signal, and the detector 150 can be, for example, a microscope group or an image sensor that can observe micro patterns in real time. In some embodiments, the detector 150 can also be used to identify the alignment mark between the smart mask 120 and the object 50 to be exposed, so as to obtain the relative position information between the smart mask 120 and the object 50 to be exposed according to the alignment mark. . Subsequent embodiments will further explain.

In some embodiments, the exposure apparatus 100 executes control software through an external computer system 10 to control the operation of the smart mask 120, for example. For example, the computer system 10 may receive the luminescence data of each micro LED detected by the detector 150, and correct the exposure parameters of the micro LED 122 of each/each unit area based on the luminescence data. In some applications, the computer system 10 can be used to default the light intensity of one or a unit area of the micro LED 122 before leaving the factory or before exposure, and perform pre-compensation to achieve exposure uniformity. In addition, the control software of the exposure equipment 100 can provide a simple visual graphic interface (such as 12), allowing the user to select the pattern to be exposed and the minimum analysis unit of each yellow light process in real time, adjust the exposure parameters in real time for exposure, and Any exposure graphic design and exposure parameters can be edited, read, saved, and saved as well. They can include, but are not limited to: the brightness or darkness of the micro LED, the luminous intensity, the cumulative time of continuous or flashing luminescence, etc. In some embodiments, the computer system 10 may further include control functions such as the luminous intensity compensation function, luminous time control, luminous mode control, exposure pattern and parameter storage and editing functions of each single micro LED 122.

In some embodiments, the carrier platform 110, the mask holder 140, and the detector 150 in the exposure equipment 100 may be implemented based on a general exposure equipment mechanism, such as a common mask aligner or Stepper mechanism. Therefore, the exposure equipment 100 may also include (but is not limited to) a mechanism that can adjust the horizontal relative position of the substrate to be processed and the photomask, and a mechanism that can adjust the relative angle of the substrate to be processed and the photomask on a horizontal plane. In other words, the smart mask 120 is compatible with traditional exposure equipment mechanisms. Taking the alignment exposure machine as an example, the yellow light lithography process of 4-inch (100 mm) wafers generally uses a 5-inch mask (127 mm x 127 mm); 8-inch (200 mm) wafers use a 9-inch mask ( 228 mm x 228 mm), and because the smart mask 120 in this embodiment is made of micro LED 122, the above-mentioned mask size can be achieved under the premise of ensuring the line width requirements of the manufacturing process, so it is compatible with traditional exposure equipment.

Specifically, the exposure equipment 100 described in this embodiment can be replaced with a smart mask 120 or used in conjunction with a traditional mask to perform the exposure process, and the light-emitting diodes are bright and dark to meet the requirements of whether the photosensitive material in a specific area is exposed or not. . When the exposure equipment 100 is used for exposure, the smart photomask 120 can be set on the photomask clamping portion 140 (that is, the original photomask position of the common alignment exposure machine), for example, by a vacuum suction groove mechanism To fix the smart mask 120. The object to be exposed 50 maintains the original fixed substrate method of a common exposure machine, and is fixed by the carrying area 112 for fixing the photomask of the carrying platform 110 and its fixing mechanism (for example, a vacuum suction groove). The light-emitting surface of the smart mask 120 faces the side where the photosensitive material 51 is arranged in the object 50 (for example, a process substrate) to be exposed, wherein the photosensitive material 51 is arranged on the substrate 52 of the object 50 to be exposed, and the photosensitive material 51 can be, for example, It is a photoresist or photosensitive polymer material, etc., but the present invention is not limited to this. Generally speaking, the photosensitive material 51 of the object 50 to be exposed faces upward, that is, the light-emitting surface of the smart mask 120 faces downward. This exposure method can use the optical microscope or image sensor and mechanism of a common alignment exposure machine to adjust the relative position of the object to be exposed 50 and the XY plane of the smart mask 120 to complete the alignment process, and use an exposure machine or similar mechanism to adjust The Z-direction distance between the process substrate plane and the smart mask 120 plane is to the optimal exposure position to complete the pre-exposure action. After that, the lighting and lighting time of each micro LED 122 are controlled through the visual graphic interface 12 provided by the computer system 10 and the control software to achieve the desired exposure effect and exposure pattern. The lighted area of the single/unit area of the micro LED 122 is the exposed area 511 of the photosensitive material 51; the lighted area (dark area) of the single/unit area of the micro LED 122 is the unexposed area 512 of the photosensitive material 51. The size of the light and dark exposure patterns of all the micro LEDs 122 and the pattern size of the actual exposure process to be performed (for example, the yellow light lithography process) can be, for example, 1:1.

Compared with a traditional mask that only provides one pattern and is expensive, the innovative exposure device 100 proposed in this disclosure and the exposure method implemented by it can meet the needs of various exposure patterns by resetting the computer system. The visual graphic interface 12 of 10 can make the array of micro LED 122 in the smart mask 120 form the required exposure pattern, so it can be reused multiple times, greatly reducing the process cost. In addition, since the exposure equipment 100 uses the computer system 10 and its control software to control single or multiple micro LEDs 122 to form specific exposure patterns in real time, there is no need to wait for the commissioning of mask production, which greatly reduces the time cost of research and development.

It is also mentioned here that the smart mask described in the embodiment of the present disclosure is not similar to a traditional mask, but only used as a light source for shielding, but can be regarded as a replacement for the original exposure source and mask. Function (or can be regarded as the integration of exposure source and traditional mask), and can be used with traditional alignment exposure machine, so as to use the mechanism of the exposure machine to adjust the position and part of the exposure parameters. In addition, the exposure equipment 100 and the smart mask 120 proposed in the present disclosure can provide the process executors to choose between the smart mask 120 or the traditional mask according to the key dimensions of different processes in the same manufacturing process. Continuous use of a single exposure method can also be used interlaced. Since the traditional mask can achieve a thinner line width design, the combination of the two can increase the flexibility of process selection, thereby optimizing the process, so it has the combined value and benefit.

The embodiments of FIGS. 2A to 2D are used to further illustrate the application examples of the smart mask 120 below. 2A and FIG. 2B are schematic diagrams of smart masks with adjustable patterns according to some embodiments of the present invention; FIG. 2C and FIG. 2D are schematic diagrams of micro LEDs according to some embodiments of the present invention.

Please refer to FIGS. 2A and 2B at the same time. FIG. 2A is a side view embodiment of the smart photomask 220, and FIG. 2B is a top view embodiment of the smart photomask 220. In some embodiments, the micro LED array 222 a composed of a plurality of micro LEDs 222 arranged in an array can be regarded as the main component of the smart photomask 220, and the smart photomask 220 further includes a bottom plate 221 and a protective layer 223. The micro LED array 222a is directly or indirectly mounted on the bottom plate 221. The protective layer 223 covers at least one or more of the plurality of micro LEDs 222. In the figure, the outermost layer of the light-emitting surface of the smart photomask 220 is completely covered by the protective layer 223 as an example for illustration , But the present invention is not limited to this. In addition, in some embodiments, the smart photomask 220 may further include an optical adjustment layer, or the protective layer 223 itself has an optical adjustment function.

In some embodiments, the micro LED 222 may use micron-sized ultraviolet LED dies to form the micro-light-emitting diode array 222a, where the planar size of the micro LED 222 can be between 0.1 micron and 100 microns, in particular, can be, for example, between Between 5 microns and 20 microns. In some practical applications, the planar size of the micro LED 222 may be between 0.1 μm and 20 μm, for example. In addition, the light-emitting wavelength range of the micro LED 222 may be, for example, between 200 nanometers and 450 nanometers. In some applications, the light-emitting wavelength range of the micro LED 222 may be, for example, between 200 nanometers and 400 nanometers.

In some embodiments, the micro LED 222 can be implemented with flip-chip type and vertical type micro LED chips, and the manufacturing process and structure configuration of the two are different. For example, the flip chip micro LED 222 includes a light emitting part and two electrodes, wherein the two electrodes are arranged on the same side of the opposite light emitting part. The vertical micro LED 222 also includes a light-emitting part and two electrodes. The difference from the flip-chip type is that the two vertical electrodes are distributed on the upper and lower sides of the light-emitting part. Generally speaking, the vertical micro LED 222 can meet higher resolution requirements.

Specifically, the size of the smart photomask 220 can be similar to that of glass or quartz photomasks generally suitable for use in traditional alignment exposure machines. The material of the bottom plate 221 may be glass, quartz, plastic, silicon, silicon carbide, and its body. The thickness can be, for example, between 500 microns and 1 cm. The maximum light-emitting area of the smart mask 220 (ie, the area of the micro LED array 222a) can be, for example, between 100 square millimeters (mm²) to 52,900 square millimeters, and in some practical applications, it can be between 625 square millimeters Between 52,900 square millimeters, roughly equivalent to a square with a side length of 1 inch to 9 inches. The overall size of the smart mask 220 can be designed to be slightly larger than the size of the object to be exposed (such as 50), and the actual maximum light-emitting area can be designed to be approximately equal to or smaller than the size of the object to be exposed.

In other words, the smart photomask 220 can be designed to be similar in size and thickness to the traditional photomask, so it can be directly set at the fixed position of the photomask of the traditional alignment exposure machine and directly replace the original exposure light source and photomask functions. A plurality of designated micro LEDs 222 of the micro light emitting diode array 222a are self-luminous to form an exposure pattern to achieve the purpose of direct exposure.

3 to 5 are used to describe in more detail the process of forming an exposure pattern by the smart mask 220 under control. FIG. 3 is a schematic diagram of the exposure pattern of the smart mask with adjustable patterns according to some embodiments of the present invention; FIGS. 4A to 4A to 5B is a schematic diagram of a partial pattern of a smart mask according to some embodiments of the present invention.

Please refer to Figure 3, before performing the exposure process, the user can use the computer system to define the minimum resolution unit of the smart mask, so that the micro LED array is divided into a plurality of exposure unit areas 310, where each exposure unit area It may include a plurality of the micro LEDs arranged in an x*y array, where x and y are natural numbers that can be defined by the user. The dotted square is the area EA that is expected to be exposed, and the blank square is the area NEA that is not expected to be exposed. The size P is the minimum line width required by this embodiment. The following FIGS. 4A to 4C will illustrate the Micro LED exposure mode corresponding to this area with a region 300p composed of 3×3 exposure unit regions 310 (that is, the minimum line width unit).

In some embodiments, if the size of a single micro LED is slightly smaller than the minimum line width required by the embodiment, a single micro LED 322 with a size of L1 will be responsible for one exposure unit area 410 (ie, the area where the minimum line width unit P1xP1 is required) The exposure behavior is shown in Figure 4A. There is a small distance D1 between the two micro LEDs 422. In some embodiments, the distance D1 may be, for example, between 0.01 μm and 20 μm, in particular, between 1 μm and 4 μm, so as to meet the line width requirement of the exposure process. In some practical applications, the minimum line width unit P1 can be designed to be greater than or equal to 1 micrometer, and the distance D1 between two adjacent micro LEDs 422 is less than or equal to 1 micrometer.

Please refer to FIG. 4B. To achieve the exposure pattern of the partial area 300p in the embodiment of FIG. 3, it is expected that the micro LED 422 in the exposure unit area 410 to be exposed will be driven to light up (marked as ON); The micro LED 422 in the exposure unit area 410 will remain as a dark spot (marked as OFF). All lighted micro LEDs 422 will form the expected exposure pattern. Regarding all micro LEDs that need to be lit, the lighting sequence is not limited to a single light in sequence, multiple lights in batches, or all at once.

In some embodiments, if the size of a single micro LED is much smaller than the minimum line width required by the embodiment, it means that a required exposure unit area 410 contains multiple micro LEDs, as shown in FIG. 4C. To achieve the exposure pattern of the area 300p in the embodiment of FIG. 3, the exposure behavior of an exposure unit area 510 (that is, the minimum line width unit P2xP2 required) will be taken care of by multiple micro LEDs 522 of size L2, and there are two micro LEDs. A fine pitch D2. In some embodiments, the distance D2 may be, for example, between 0.01 μm and 20 μm, in particular, between 1 μm and 4 μm, so as to meet the line width requirement of the exposure process. In some practical applications, the minimum line width unit P2 is less than or equal to 1 micrometer, and the distance D2 between two adjacent micro LEDs 522 is less than or equal to 1 micrometer. In this embodiment, each exposure unit area 510 includes 4x4 micro LEDs as an example. It is expected that the micro LED array 522a in the exposure unit area 510 to be exposed will be driven to light up (marked as ON); the exposure will not be exposed The micro LED array 522a in the unit area 410 will remain as a dark dot (marked as OFF). All lighted micro LEDs 522 will form the expected exposure pattern. Regarding all micro LEDs that need to be lit, the lighting sequence is not limited to a single light in sequence, multiple lights in batches, or all at once.

In the embodiment of FIG. 4C, such ultra-high resolution micro LED arrays may have some permanent dark spots due to congenital local defects. In order to compensate for the possible influence of the dark spots on the exposure process, the present disclosure additionally proposes a dark spot compensation control method to solve the above-mentioned problems. Similarly, taking the exposure pattern of the region 300p in the embodiment of FIG. 3 as an example, FIG. 5 illustrates a schematic diagram of the exposure pattern in the case where dark spots occur.

Please refer to FIG. 5, following the example of setting the exposure unit area 510 of the embodiment in FIG. 4C, that is, each exposure unit area 510 includes 4x4 micro LEDs, and the micro LED array 522a in the area EA to be exposed is expected to be driven to light up ( Marked as ON); the micro LED array 522a in the area NEA that is not expected to be exposed will remain dark (marked as OFF), and there may be failures in the area EA that is expected to be exposed or the area NEA that is not expected to be exposed Normally working micro LEDs, such as permanent dark spots (such as 522b) caused by damaged micro LEDs, or the phenomenon of luminous intensity attenuation caused by the aging of micro LEDs for a long time. The following description takes the damaged permanent dark spot (marked as permanent OFF) as an example, but those with ordinary knowledge in the field can understand after referring to the following description that the compensation control described in this embodiment can be applied to compensate various types of abnormalities. The working micro LED is not limited to damaged permanent dark spots.

In some embodiments, when a dark spot is detected, the smart mask can compensate for the way the micro LED 522a around the permanent dark spot adjusts the light-emitting state, such as adjusting the light-emitting brightness (for example, adjusting the individual micro LED's Luminous intensity or the total luminescence of all micro LEDs in the exposure unit area) or directly increase the expected light-emitting time in the corresponding exposure unit area, so that each exposure unit area can maintain a uniform and equivalent exposure effect and maintain the stability of the process The invention does not limit the calculation method of compensation.

In other words, when z micro LEDs in the exposure unit area are not working properly, the light-emitting state of at least one of the remaining micro LEDs in the normal working state in the exposure unit area will be adjusted to compensate for the z micro LEDs. Micro LED working normally, where z is a natural number, and z<x*y.

The following describes the compensation method for adjusting the brightness of the light. Firstly, the exposure unit area 520 with a dead pixel as the permanent dark dot 503 is taken as an example for description. The permanent dark dot 503 occupies 1/16 of the area of the exposure unit area 520. When the dark spot 503 is detected by the smart photomask (detected by a detector), the smart photomask can select one or more micro LEDs around the dark spot 503 and increase its luminous brightness, so that the exposure unit area 520 The overall brightness can be maintained when there is no dark spot. Taking the exposure unit area 530 as an example again, there are four dead pixels in the exposure unit area 530 as permanent dark dots 504-507, accounting for 4/16 of the total minimum line width unit. When the smart photomask detects dark spots 504-507, the smart photomask can select one or more micro LEDs around the dark spots 504-507 and increase their brightness, so that the overall brightness of the exposure unit area 530 can be maintained at The light emission brightness when there is no dark spot, and substantially maintains the same/similar brightness as the exposure unit area 520.

In other words, in an exposure unit area where all micro LEDs are in a normal working state, and each micro LED in the micro LED array has the first brightness, if one or more dark spots are generated in the exposure unit area , The smart mask adjusts the light-emitting brightness of at least one of the remaining micro LEDs in the normal working state in the exposure unit area to a second brightness that is greater than the first brightness. The control of adjusting the light-emitting brightness may be, for example, increasing the current value of the remaining normally working micro LEDs to a set compensation current value based on the number of dark spots, or determining the remaining normally working micro LEDs by detecting the brightness of the exposure unit area 520 The compensation current value is not limited to this in the present invention.

The following describes the compensation method for adjusting the light-emitting time. Firstly, the exposure unit area 520 with a dead pixel as the permanent dark dot 503 is taken as an example for description. The permanent dark dot 503 occupies 1/16 of the area of the exposure unit area 520. When the smart photomask detects the dark spot 503, the smart photomask can select one or more micro LEDs around the dark spot 503 and extend its light-emitting period, so that the exposure of the exposure unit area 520 (luminous exposure, that is, a certain period of time) The luminous flux per unit area inside, lx*s) can be maintained the same as when there is no dark spot. For example, the smart mask can adjust the lighting time of the remaining 15 micro LEDs in the exposure unit area 520 that are working normally to 16/15 times the original, so that the exposure amount of the exposure unit area 520 can remain the same. Taking the exposure unit area 530 as an example again, there are four dead pixels in the exposure unit area 530 as permanent dark dots 504-507, accounting for 4/16 of the total minimum line width unit. When the smart mask detects dark spots 504-507, the smart mask can select one or more micro LEDs around the dark spots 504-507 and extend the light-emitting period, so that the exposure of the exposure unit area 530 can maintain the same It is the same when there is no dark spot. For example, the smart mask can adjust the lighting time of the remaining 15 micro LEDs in the exposure unit area 530 that are normally working to 16/12 times the original, so that the exposure amount of the exposure unit area 530 can remain the same, and substantially It maintains the same/similar brightness as the exposure unit area 520.

In other words, in this compensation mode, when z micro LEDs in the exposure unit area are not working properly, the lighting time of at least one of the remaining micro LEDs in normal working state will be adjusted to be longer than the original setting The second period of the period (or the first period). In some embodiments, the first period and the second period may conform to the following functional relationship:

, Where T1 is the first period, T2 is the second period, and n is a constant setting value used to compensate for environmental impact or process deviation.

After the above compensation, the micro LED array in each exposure unit area (regardless of whether there is a dark spot) can also form the expected exposure pattern. Regarding all micro LEDs that need to be lit, the lighting sequence is not limited to a single light in sequence, multiple lights in batches, or all at once. In addition, in some embodiments, as shown in FIGS. 4C and 5, since the size L2 and the distance D2 are both smaller than the minimum line width P2 of the exposure process capability, permanent dark spots (such as 503-507) and pairwise micro LEDs The distance will not affect the continuity of the overall exposure pattern.

2A and 2B again, the smart mask 220 may further include a plurality of alignment marks 224, and the alignment marks 224 are used to assist the exposure mechanism in the alignment operation during the manufacturing process. In some embodiments, the alignment mark 224 may be implemented using a metal film that is opaque to visible light. In other embodiments, the alignment mark 224 can also be used with a micro LED to generate a new alignment mark on the object to be exposed.

In the embodiment in which the alignment mark 224 of the micro LED is used together, the micro LED 222 (hereinafter referred to as the exposure micro LED 222) used for the exposure process can be, for example, set in the central area CTA of the bottom plate 221 and used as The micro LED for the purpose of generating the alignment mark (hereinafter referred to as the alignment micro LED) can be, for example, arranged in the peripheral area of the base plate 221 (that is, the area on the base plate 221 except for the central area CTA). The inside/periphery of the area of the mark 224 is taken as an example, but the present invention is not limited to this. In some embodiments, the alignment micro LED can also be arranged in the array of the exposure micro LED 222, or a part of the exposure micro LED 222 can be controlled as the alignment micro LED during the positioning period. In other words, the alignment micro LEDs can be located outside the exposure Micro LED array 222a or inside the array 222a, as long as the alignment micro LEDs can be irradiated into the exposure area of the object 50 to be exposed.

6 and FIG. 7 are used to further illustrate the positioning embodiment of the micro LED, where FIG. 6 is a schematic diagram of a smart mask with adjustable patterns according to other embodiments of the present invention; FIG. 7 is some embodiments according to FIG. 6 Schematic diagram of the alignment mark.

6 and 7 at the same time, this embodiment is roughly the same as the previous embodiment in FIG. 2, the difference is that in addition to the alignment mark 224 in the alignment mark 624 area of the smart mask 620, It also includes an alignment micro LED that assists in the formation of substrate alignment marks. In this embodiment, the alignment mark 624 includes several alignment patterns as examples, such as a square, a cross, etc., but the present invention does not limit the shape of the alignment mark. Those with ordinary knowledge in the art can base on the conventional yellow light microscopy. The shadow process knowledge design includes the

alignment patterns

6241 and 6242 composed of metal thin films and the

alignment patterns

6243 and 6244 composed of the micro LED 622' in the alignment mark 624 area. The blank area 6245 in the area of the alignment mark 624 refers to, for example, an area where no visible light or infrared light-proof signs or structures are provided. The blank area 6245 may, for example, only have a bottom plate (such as 221), a protective layer (such as 223), and visible light. Wires with transparent conductive film materials that can penetrate infrared light, such as Indium Tin Oxide (ITO), Aluminum-doped Zinc Oxide (AZO), etc. Through the mixed design of alignment patterns 6241 to 6244, the smart mask 620 can mix and match traditional masks to complete multiple layers of stacked microstructure components when it is used with traditional common alignment exposure machines to perform the exposure process. . In the following example, if the smart photomask 620 is used for exposure in the first yellow light lithography process based on the evaluation of use requirements, the alignment micro LED 622' that composes the alignment pattern 6243 can be lit (for example, 9 alignment micro LEDs 622' that make up the cross pattern LED 622') to generate the first set of alignment marks for use in subsequent processes. In other words, after the first exposure process, the object 50 to be exposed will have an alignment mark corresponding to the alignment pattern 6243, and the exposure equipment will perform alignment operations based on the alignment mark in the subsequent process. If the object to be exposed 50 has undergone at least one yellow light lithography process, and the object to be exposed 50 already has the alignment mark (for example, the alignment mark corresponding to the alignment pattern 6242) required by the subsequent process, then a new exposure process is performed The time exposure equipment can perform an alignment operation based on the opaque metal film alignment pattern 6242 on the smart mask 620 and the alignment mark on the object 50 to be exposed.

After the object 50 to be exposed has undergone multiple processes, the alignment marks on it may be affected and blurred in each process, which may result in reduced alignment accuracy or alignment errors/failures. In some cases, In an embodiment, the smart mask 620 can use the micro LED 622' to align the micro LED 622' to generate a new alignment mark on the object 50 to be exposed for use in subsequent manufacturing processes, thereby solving the above-mentioned problem of reduced alignment accuracy or alignment failure. Also taking FIG. 7 as an example, in the case where the object 50 to be exposed has an alignment mark corresponding to the alignment pattern 6241, when the smart mask 620 is used for exposure, the exposure equipment will first based on the alignment mark 624 An alignment operation is performed on the alignment pattern 6241 and the alignment mark on the object 50 to be exposed. After the alignment is completed, the smart mask 620 will be exposed and the alignment micro LEDs 622' that make up the alignment pattern will be lighted up (for example, nine alignment micro LEDs 622' that make up the cross-shaped alignment pattern 6243 will be lighted up) , To produce a new alignment pattern on the object 50 to be exposed. This new alignment pattern can be used as a new alignment mark for the object 50 to be exposed for subsequent process alignment.

Although the above description is based on forming a new alignment pattern 6243 at a position different from the old alignment pattern 6241 as an implementation example of generating a new alignment mark (that is, the new alignment pattern 6243 alone serves as the object 50 to be exposed New alignment mark), but the present invention is not limited to this. In some embodiments, the smart mask 620 may also define a new alignment pattern within/near the old alignment mark of the object 50 to be exposed, so that the existing alignment pattern of the object 50 to be exposed and the newly added Alignment patterns combined to form a new alignment mark. For example, in the case where the object 50 to be exposed has an alignment mark corresponding to the alignment pattern 6242, when the smart mask 620 is used for exposure, the exposure device will first base on the alignment pattern in the alignment mark 624 6242 performs an alignment operation with the alignment mark on the object 50 to be exposed. After the alignment is completed, the smart mask 620 will expose and light up the alignment micro LEDs 622' that make up the alignment pattern (for example, 16 micro LEDs 622' that form 4 rectangular alignment patterns 6244). A new alignment pattern is generated on the object 50 to be exposed. At this time, the old rectangular frame pattern (corresponding to 6242) on the object to be exposed 50 and the newly defined 4 smaller rectangular patterns 6244 can be combined to form a new inverted cross-shaped alignment pattern as a new alignment mark For subsequent process alignment purposes. By combining the old alignment pattern and the newly added alignment pattern to form a new alignment mark, in addition to maintaining the need for alignment accuracy in subsequent manufacturing processes, it can also effectively limit the cost of alignment marks. The area, thereby improving wafer utilization.

Fig. 8 is a schematic diagram of a control interface of a pattern-adjustable smart mask according to some embodiments of the present invention. Please refer to Figure 8. In this embodiment, the visual graphic interface provided by the control software can be configured with (but not limited to) the following functions: (1) You can directly click the brightness setting of each single micro LED in the left exposure area (You can zoom in and out the partial exposure area through the mouse wheel or the dark keys of the keyboard); (2) One-click to set the full screen as bright (labeled as "All clear") or full screen as dark (labeled as "All dark") , Negative film mode (marked as "reverse color", that is, one-key conversion of the pattern of light to dark and dark to light, you can directly switch in the same pattern when you select positive and negative photoresist); (3) Main parameters Setting functions, including light intensity (labeled as “Intensity”), exposure time (labeled as “Time”), exposure frequency, etc.; (4) Save/read patterns and correspond to all exposure parameter settings (store patterns/ The parameters are marked as "Save" and "Save as", the read pattern is marked as "Load pattern", the read parameter is marked as "Load recipe"), exposure is performed (marked as "Go Exposure"), etc.

In addition, in some embodiments, the control software also includes the luminescence compensation function of each single micro LED, which means that the software can be set according to a direct or indirect result of detecting the luminous intensity of each micro LED. Determine the degree to which each single micro LED should be compensated to achieve the overall uniformity of light emission. For example, the smart photomask of the embodiment of the present disclosure can directly or indirectly scan the luminous intensity of all micro LEDs in the exposure range before leaving the factory to understand the luminous uniformity within the overall exposure range. During compensation, the controller will preset a higher current or voltage to the micro LED with lower light intensity to adjust the luminous intensity of the micro LED to the overall expected average value; and the micro LED with brighter light intensity will be A lower current or voltage is preset to adjust the luminous intensity of the light to the overall expected average value. In addition, the compensation setting mentioned here also includes increasing the local luminous intensity of the surrounding micro LEDs of the permanent dark spot to the overall expected luminous intensity average value. Then, for the compensation setting code corresponding to the above compensation planning output, the client can directly input the compensation setting code when the software program is executed for the first time to complete the initial compensation setting for the Micro LED array lamp. This program is used to meet the calibration requirements before leaving the factory, after repair, or before exposure.

In some embodiments, the computer system and the control software can preset the light intensity of one or one exposure unit area of the Micro LED before leaving the factory or before exposure through the initial measurement, and perform pre-compensation to achieve exposure uniformity. The control software also provides a concise interface, allowing users to select the pattern to be exposed and the minimum analysis unit of each yellow light process in real time, adjust the exposure parameters in real time for exposure, and edit, read, save, and save any exposure graphic design Important parameters related to exposure include: the brightness or darkness of the Micro LED, the luminous intensity, the cumulative time of continuous or flashing luminescence, etc.

FIG. 9 is a flowchart of steps of an exposure method according to some embodiments of the present invention. Please refer to FIG. 9, the exposure method described in this embodiment can be implemented in conjunction with the hardware, operations, and interfaces described in the embodiments of FIGS. 1 to 8. The exposure method includes the following steps: First, the exposure equipment (such as 100) will perform an alignment operation to align the smart photomask (such as 120/220/620) on a plurality of first miniature light-emitting diode components (such as arrays). 122/222/422/522/622) is aligned with the object to be exposed (such as 50), and the light-emitting surface of the plurality of first micro-light-emitting diode components (such as the bottom plate 121/221 is provided with the first micro-light-emitting diode component) ) Facing the object to be exposed (step S910). For example, the exposure equipment can use an image sensor or a Charged Coupled Device (CCD) to identify/recognize the alignment marks on the smart mask and the object to be exposed, so as to obtain the position information of the smart mask and the object to be exposed , And then adjust the relative position of the smart mask and the object to be exposed based on the position information. For example, the alignment marks on the smart mask and the object to be exposed can be adjusted to overlap each other in the same axis to achieve alignment/ Counterpoint operation. Then, the smart photomask can use a controller (such as 130) to send a first control signal to the plurality of first micro light emitting diode components, so that the plurality of first micro light emitting diode components light up and respond to the control signal. Display a first light-emitting pattern, which can be, for example, the light-emitting pattern shown in FIG. 3 (step S920); and illuminate the object to be exposed with the first light-emitting pattern, thereby defining a first exposure pattern on the object to be exposed (Step S930). Here, the exposure pattern may be, for example, a pattern used to form a circuit on the conductive layer, or a pattern used to form a through hole on the insulating layer, and the present invention is not limited thereto. After the above-mentioned exposure process is completed, the exposed object can be followed by other processes, such as developing, hard-bake, etching and/or photoresist removal, etc. The present invention is not limited to this.

After the subsequent process is completed, if the object needs to undergo the next exposure process according to the demand, the smart mask described in this embodiment only needs to use the controller to send a second control signal to the multiple after the alignment operation is performed. In a way of exposing micro LEDs, the multiple exposing micro LEDs are turned on in response to the control signal and display the second light-emitting pattern (ie, repeating the above steps S910 to S930), and then the second exposure process can be realized , No need to replace a new mask.

In some embodiments, the smart photomask can also use the alignment micro LED to form alignment marks on the object to be exposed for subsequent process alignment. For example, the smart mask can use the controller to send an alignment signal to the alignment micro LED, so that the alignment micro LED lights up in response to the alignment signal and forms an alignment mark on the object to be exposed (step S940). In step S940, if the object to be exposed is an unprocessed wafer (without alignment mark), the smart mask can use the alignment micro LED to form the first alignment mark on the wafer for subsequent process alignment Use; if the object to be exposed is a wafer with alignment marks, the smart photomask can first be aligned based on the existing alignment marks, and use the alignment micro LED to align the wafer during exposure The mark is updated to maintain the alignment accuracy of the subsequent manufacturing process. For the specific implementation example of step S940, reference may be made to the description of the embodiments in FIG. 6 and FIG. 7, and the details will not be repeated here. In addition, in the step flow of FIG. 9, although step S940 is shown as continuing after step S930, in actual applications, these two steps are not necessarily sequential. It may be that step S940 is executed before S930. The present invention does not impose restrictions on this, or it is executed simultaneously, and the relevant requirements are subject to the description of the scope of the patent application.

In some embodiments, the exposure method may further include a correction and compensation step S900 before step S910. The correction and compensation step S900 includes: detecting whether there is an exposure micro LED in a non-working state in any exposure unit area (step S902); when z exposure micro LEDs are in a non-working state in the exposure unit area , Adjusting the light emission state of at least one of the remaining exposure micro LEDs in the normal working state in the corresponding exposure unit area to compensate for the z exposure micro LEDs that cannot work normally (step S902). For the specific implementation example of step S902, reference may be made to the description of the embodiment in FIG. 5, which will not be repeated here.

FIG. 10 is a flowchart of steps of a method for forming an exposure pattern of a smart photomask according to some embodiments of the present invention. Please refer to FIG. 10, the exposure pattern forming method described in this embodiment can also be implemented in conjunction with the hardware, operations, and interfaces described in the foregoing embodiments of FIGS. 1 to 8. The exposure pattern forming method includes the following steps: defining the minimum analysis unit of the micro light emitting diode assembly array (such as 222a/522a), so that the micro light emitting diode assembly array is divided into a plurality of exposure unit regions (such as 310/510) /520/530), wherein each of the exposure unit areas includes at least one micro light-emitting diode assembly (step S10); a visual graphical interface (such as the interface in the embodiment of FIG. 8) is generated based on the defined minimum analysis unit, wherein The visual graphical interface includes a plurality of selection units (for example, the grid-shaped area on the left side of FIG. 8, each grid may represent, for example, a selection unit), and the plurality of selection units respectively correspond to the plurality of exposure unit regions ( Step S1020); receiving parameter setting information (such as the brightness or darkness of the Micro LED, the luminous intensity, the cumulative time of continuous or flashing luminescence, etc.) through the multiple selection units (step S1030); and setting according to the parameters The information sends a control signal to adjust the exposure parameters of the micro light emitting diode components in the corresponding unit area, thereby defining the exposure pattern (step S1040).

In addition, it should be noted that, in order to clarify the features of each invention disclosed in the present disclosure, this article uses multiple embodiments to describe each embodiment as follows. However, it does not mean that each embodiment can only be implemented separately. Those skilled in the art can assemble and design feasible implementation examples by themselves according to their needs, or replace the replaceable components/modules in different embodiments according to design requirements. In other words, the implementation mode taught in this case is not limited to the aspects described in the following examples, but also includes the replacement and permutation and combination of the various embodiments/components/modules where feasible, which is described here first. .

Claims

A smart mask with adjustable patterns, including:
Bottom plate
A plurality of first micro-LEDs are arranged in an array on the bottom plate; and a protective layer covering at least one or more of the plurality of micro-LEDs,
Wherein, the size of at least one of the plurality of first miniature light-emitting diode assemblies is between 0.1 micron and 100 microns, and at least two of the plurality of first miniature light-emitting diode assemblies have adjacent first miniature light-emitting diodes The spacing between the components is between 0.01 microns and 20 microns,
Wherein, the plurality of first micro light emitting diode components determine the light emitting state based on the control signal received from the circuit on the bottom plate, thereby defining the exposure pattern.
4. The pattern-adjustable smart photomask of claim 1, wherein the light-emitting array composed of the plurality of first micro light-emitting diode components has an area between 625 square millimeters (mm²) and 52,900 square millimeters.
4. The pattern-adjustable smart mask of claim 1, wherein the light-emitting wavelength range of the plurality of first miniature light-emitting diode components is between 200 nanometers and 400 nanometers.
8. The pattern-adjustable smart photomask of claim 1, wherein the bottom plate has a first area and a second area, and the plurality of first micro light emitting diode components are disposed in the first area.
The smart mask with adjustable patterns as claimed in claim 4, further comprising:
A plurality of second micro-LED components (micro-LEDs) are arranged in the second area of the bottom plate and used to display alignment patterns under control.
8. The pattern-adjustable smart mask of claim 5, wherein the first area includes a central area of the bottom plate, and the second area includes a peripheral area of the bottom plate.
The pattern-adjustable smart photomask of claim 1, wherein the plurality of first micro light-emitting diode components are divided into a plurality of exposure unit areas, and at least one of the plurality of exposure unit areas includes x* A plurality of the first miniature light emitting diode components arranged in an array of y, where x and y are natural numbers.
7. The pattern-adjustable smart photomask of claim 7, wherein when z of the first micro light-emitting diode assembly is in a non-operating state in one of the exposure unit areas, the one of the exposure units is exposed The light-emitting state of at least one of the remaining first micro-light-emitting diode components in the normal working state in the unit area is adjusted to compensate for the z first micro-light-emitting diode components that cannot work normally, where z is a natural number, and z<x*y.
8. The pattern-adjustable smart photomask of claim 8, wherein when the plurality of first micro-light-emitting diode components are in a normal working state, the plurality of first micro-light-emitting diode components are controlled to be in the first period The inside is kept lit.
9. The pattern-adjustable smart photomask of claim 9, wherein when z of the first micro light-emitting diode assemblies are in an unworkable state in one of the exposure unit areas, the others are in normal work The lighting time of at least one of the first micro light emitting diode components in the state is adjusted to be greater than the second period of the first period.
10. The pattern-adjustable smart mask of claim 10, wherein the first period and the second period meet the following relationship:

; Wherein, T1 is the first period, T2 is the second period, and n is a constant.
8. The pattern-adjustable smart photomask of claim 8, wherein when the plurality of first micro light emitting diode components are in a normal working state, the plurality of first micro light emitting diode components are controlled to have the first brightness .
The pattern-adjustable smart photomask of claim 12, wherein when z of the first micro light-emitting diode assemblies in one of the exposure unit areas are in a non-working state, the others are in a normal working state The light-emitting brightness of at least one of the first miniature light-emitting diode assemblies in the state is adjusted to a second brightness that is greater than the first brightness.
8. The pattern-adjustable smart mask of claim 7, wherein each of the plurality of exposure unit areas is less than or equal to the minimum line width in the exposure pattern.
4. The pattern-adjustable smart photomask of claim 1, wherein the size of at least one of the plurality of first micro light emitting diode components is between 0.1 micrometers and 20 micrometers.
The pattern-adjustable smart photomask of claim 1, wherein the distance between at least two adjacent first micro-light-emitting diode components of the plurality of first micro-light-emitting diode components is between 1 micrometer and 4 micrometers. between.
An exposure equipment, including:
The bearing platform has a bearing area suitable for setting the object to be exposed;
The pattern-adjustable smart photomask includes a plurality of first micro-LED components, wherein each of the first micro-LED components receives a control signal, and determines a light-emitting state based on the received control signal, To define the exposure pattern;
The controller is electrically connected to the plurality of first miniature light-emitting diode components for generating the control signals to respectively control the light-emitting states of the plurality of first miniature light-emitting diode components; The carrier platform is configured to fix the smart mask with adjustable patterns, wherein when the exposure device is performing an alignment operation, the mask clamping portion drives the smart mask with adjustable patterns to set The objects to be exposed on the carrying area are aligned.
17. The exposure apparatus of claim 17, wherein the size of at least one of the plurality of first micro light emitting diode components is between 0.1 micrometers and 100 micrometers.
17. The exposure apparatus of claim 17, wherein the size of at least one of the plurality of first micro light emitting diode components is between 0.01 micrometers and 20 micrometers.
17. The exposure equipment of claim 17, wherein the distance between at least two adjacent first micro-light-emitting diode components of the plurality of first micro-light-emitting diode components is between 0.01 micron and 1 micron.
17. The exposure apparatus of claim 17, wherein the distance between at least two adjacent first micro-light-emitting diode components of the plurality of first micro-light-emitting diode components is between 1 micrometer and 4 micrometers.
The exposure equipment according to claim 17, further comprising:
The detector is used for detecting whether the plurality of first micro light emitting diode components are lit in response to the control signal.
An exposure method for semiconductor manufacturing process, including:
Aligning the bottom plate provided with a plurality of first micro-LED components (micro-LEDs) formed in an array with the object to be exposed, and making the light emitting surfaces of the plurality of first micro-LED components face the object to be exposed;
Sending a first control signal to the plurality of first micro light emitting diode components, so that the plurality of first micro light emitting diode components light up in response to the control signal and display a first light emitting pattern; and using the first light emitting diode The pattern illuminates the object to be exposed, thereby defining a first exposure pattern on the object to be exposed.
The exposure method for semiconductor manufacturing process according to claim 23, further comprising:
Sending a second control signal to the plurality of first micro light emitting diode components, so that the plurality of first micro light emitting diode components light up in response to the control signal and display a second light emitting pattern; and use the second light emitting diode The pattern illuminates the object to be exposed, thereby defining a second exposure pattern on the object to be exposed.
23. The exposure method for semiconductor manufacturing process according to claim 23, wherein a plurality of second micro light-emitting diode components are further disposed on the bottom plate, and the exposure method further comprises:
Sending an alignment signal to the plurality of second micro light emitting diode components, so that the plurality of second micro light emitting diode components light up in response to the alignment signal, and display an alignment pattern to illuminate the object to be exposed, An alignment mark corresponding to the alignment pattern is defined on the object to be exposed.
The exposure method of claim 23, wherein a plurality of first micro-LEDs (micro-LEDs) composed of an array are aligned with the object to be exposed, and the plurality of first micro-LEDs are made to emit light The step of facing the light-emitting surface of the diode assembly toward the object to be exposed includes:
Identifying the first alignment mark on the bottom plate and the second alignment mark on the object to be exposed to obtain the position information of the first alignment mark and the second alignment mark; and based on the The position information adjusts the relative position of the bottom plate and the object to be exposed.
The exposure method for semiconductor manufacturing process according to claim 23, wherein the first alignment mark and the second alignment mark correspond to the same first alignment pattern, and a plurality of The second micro light emitting diode assembly, the exposure method further includes:
Sending an alignment signal to the plurality of second micro light emitting diode components, causing the plurality of second micro light emitting diode components to light up in response to the alignment signal, and displaying a second alignment pattern to illuminate the to-be-exposed Object to generate a third alignment mark on the object to be exposed based on the second alignment pattern.
27. The exposure method for semiconductor manufacturing process according to claim 27, wherein the third alignment mark comprises a combination of the first alignment pattern and the second alignment pattern.
The exposure method for semiconductor manufacturing process according to claim 23, further comprising:
It is detected whether the plurality of first micro light-emitting diode components are illuminated in response to the first control signal.
A pattern-adjustable smart mask is suitable for use with exposure equipment. The smart mask includes:
The bottom plate is suitable for being arranged on the reticle clamping part of the exposure equipment and being fixed by the illumination clamping part;
A plurality of first micro-LED devices (micro-LEDs) are arranged in an array on the bottom plate to be lit to display a light-emitting pattern for defining an exposure pattern; and a protective layer covering the plurality of At least one or more of the miniature light-emitting diode components,
Wherein, the size of at least one of the plurality of first micro light-emitting diode components is between 0.1 micrometer and 20 micrometers, and the number of the plurality of first micro light-emitting diode components is set such that the array has a size between 0.1 micrometer and 20 micrometers. The light-emitting area is between 625 square millimeters and 52,900 square millimeters.
The smart mask with adjustable patterns as claimed in claim 30, wherein the exposure equipment suitable for use includes a mask aligner or a stepper.
33. The pattern-adjustable smart photomask of claim 30, wherein the photomask clamping portion includes a vacuum suction groove.
A method for forming an exposure pattern of a smart photomask, wherein the smart photomask includes a plurality of micro light-emitting diode components arranged in an array, and the method for forming an exposure pattern includes:
Defining the minimum analysis unit of the array of micro light emitting diode components, so that the array of micro light emitting diode components is divided into a plurality of exposure unit regions, wherein each of the exposure unit regions includes at least one micro light emitting diode component;
A visual graphic interface is generated based on the defined minimum analysis unit, wherein the visual graphic interface includes a plurality of selection units, and the plurality of selection units respectively correspond to the regions of the plurality of exposure units; and through the multiple Each selection unit receives parameter setting information, and sends a control signal according to the parameter setting information to adjust the corresponding exposure parameters of the micro light emitting diode assembly in the unit area, thereby defining an exposure pattern.
The method for forming an exposure pattern of a smart photomask according to claim 33, wherein the exposure parameters include one or more of the on-off, luminous intensity, continuous luminous time, and cumulative value of flashing luminous time of the micro light-emitting diode assembly By.