CN114631060A

CN114631060A - Smart mask, exposure apparatus, exposure method and exposure pattern forming method

Info

Publication number: CN114631060A
Application number: CN202080063730.XA
Authority: CN
Inventors: 杨朝舜; 黄靖文
Original assignee: Mosi Technology Co ltd
Current assignee: Mosi Technology Co ltd
Priority date: 2019-09-10
Filing date: 2020-09-09
Publication date: 2022-06-14
Also published as: TW202111425A; WO2021048746A1

Abstract

A smart mask (120) and an exposure apparatus (l00), an exposure method and an exposure pattern forming method thereof. The smart mask (120) includes a base plate (l21), a plurality of first micro LED devices (122) and a protection layer. A plurality of first micro light emitting diode devices (122) are arranged in an array on a substrate (121) conforming to the size of a conventional mask to determine a light emitting state based on control signals received from wiring on the substrate (l21), thereby defining an exposure pattern. The protective layer covers at least one or more of the plurality of micro light emitting diode components (l 22). The size and device spacing of the first micro light emitting diode devices l22 are designed to meet the line width requirements of the exposure process, so that the size of the smart mask 120 can meet the mask holding member l30 requirements of the exposure apparatus 100.

Description

Smart mask, exposure apparatus, exposure method and exposure pattern forming method

The present invention relates to semiconductor manufacturing equipment and methods, and more particularly to an intelligent mask with adjustable patterns and an exposure apparatus and an exposure method using the same.

In the fabrication of semiconductor integrated circuits, photolithography (photolithography) techniques are used to precisely define a specific pattern on a photoresist layer, and then the photoresist layer is patterned by etching to form a desired circuit structure on a semiconductor substrate. In a conventional photolithography process, the following steps are sequentially performed: coating photoresist, baking, defining exposure range by mask, exposing, developing pattern, baking, etc., wherein the photoresist layer can be formed by photosensitive polymer material, so as to define the pattern of microstructure by utilizing the difference of developed capability before and after exposure.

Different sizes of masks are used for different sizes of substrates to be processed, generally, the size of the mask is slightly larger than that of the substrate to be processed, and a metal pattern is defined thereon as a light source shield for protecting the photoresist from being irradiated by an exposure source.

The substrate of the conventional photomask is usually film, glass or quartz. The mask manufacturer plates a layer of opaque metal film on the mask substrate and covers it with photoresist, then uses high-resolution laser to define the pattern by scanning, and then carries out metal etching to remove the shielded part after developing the defined photoresist pattern, thus completing a mask. In a typical business model, after designing a mask pattern for a process executive, a mask manufacturer is entrusted with producing a mask for its use.

The nano-scale or micro-scale process flow requires a plurality of different layer stacks to achieve the purpose of structure or multi-layer circuit, so that one product often needs a plurality of masks with different patterns to achieve different pattern definition requirements.

The pattern provided by each mask is fixed and cannot be changed. If there is a product whose manufacturing flow requires ten different patterns and structures to be stacked, ten different masks may be required to meet the requirement, i.e., the manufacturing cost of ten masks is required.

In addition, because the mask manufacturing time is long and the time cost is high, several days are generally required from the design package of the process performer to the mask production, and after the mask is obtained, the process performer can start the production process, so the production efficiency is limited.

This abstract describes many embodiments of the invention. The term "present invention" is used herein to describe only some embodiments disclosed in the specification (whether or not in the claims), and not a complete description of all possible embodiments. Certain embodiments of various features or aspects described below as "the invention" may be combined in different ways to form.

The present invention provides a novel pattern-adjustable intelligent mask, and an exposure apparatus and an exposure method using the same, which can reduce the mask manufacturing cost in the semiconductor manufacturing process and increase the production efficiency, so as to solve the above problems.

The pattern-adjustable intelligent photomask provided by the embodiment of the invention comprises a bottom plate, a plurality of first micro light-emitting diode assemblies and a protective layer. The plurality of first micro light emitting diode components are arranged on the bottom plate in an array mode. The protective layer covers at least one or more of the plurality of micro light emitting diode components. At least one of the first micro light emitting diode assemblies has a size of 0.1 to 100 micrometers, and a distance between two adjacent first micro light emitting diode assemblies is 0.01 to 20 micrometers. The plurality of first micro light emitting diode assemblies determine a light emitting state based on a control signal received from the circuit on the base plate, thereby defining an exposure pattern.

The embodiment of the invention provides exposure equipment applying the intelligent photomask with the adjustable pattern, which comprises a bearing platform, the intelligent photomask with the adjustable pattern, a controller and a photomask clamping part. The bearing platform is provided with a bearing area suitable for setting an object to be exposed. The pattern-adjustable smart mask includes a plurality of first micro light emitting diode (micro-LED) elements, wherein each of the first micro LED elements receives a control signal and determines a light emitting state based on the received control signal, thereby defining an exposure pattern. The controller is electrically connected to the first micro light emitting diode assemblies and is used for generating the control signal to respectively control the light emitting states of the first micro light emitting diode assemblies. The photomask clamping part is configured relative to the bearing platform and used for fixing the intelligent photomask with the adjustable pattern, wherein when the exposure equipment executes the alignment operation, the photomask clamping part drives the intelligent photomask with the adjustable pattern to align with an object to be exposed arranged on the bearing area.

The embodiment of the invention provides an exposure method, which comprises the steps of aligning a plurality of first micro light-emitting diode assemblies (micro-LEDs) composed of arrays with a substrate, and enabling light emitting surfaces of the plurality of first micro light-emitting diode assemblies to face the substrate; sending a first control signal to the plurality of first micro light emitting diode assemblies to enable the plurality of first micro light emitting diode assemblies to light up and display a first light emitting pattern in response to the control signal; and irradiating the object to be exposed with the first light-emitting pattern, thereby defining a first exposure pattern on the object to be exposed.

The embodiment of the invention provides an intelligent light shield with an adjustable pattern, which is suitable for being matched with exposure equipment. The bottom plate is suitable for being arranged on a light shield clamping part of the exposure equipment and is fixed by the illumination clamping part. The first micro light-emitting diode assemblies are arranged on the bottom plate in an array mode and used for displaying light-emitting patterns used for defining exposure patterns after being lightened. The protective layer covers at least one or more of the plurality of micro light emitting diode components. At least one of the first micro light emitting diode components has a size between 0.1 and 20 micrometers, and the number of the first micro light emitting diode components is set to make the array have a light emitting area between 625 and 52900 square millimeters.

The embodiment of the invention provides an exposure pattern forming method of an intelligent photomask, wherein a minimum analysis unit of a micro light-emitting diode component array is defined so as to divide the micro light-emitting diode component array into a plurality of exposure unit areas, wherein each exposure unit area comprises at least one micro light-emitting diode component; the intelligent light shield comprises a plurality of micro light-emitting diode components which are arranged in an array, and the exposure pattern forming method comprises the following steps: defining a minimum analysis unit of the micro light-emitting diode component array so as to divide the micro light-emitting diode component array picture into a plurality of exposure unit areas, wherein each exposure unit area comprises at least one micro light-emitting diode component; generating a visual graphic interface based on the defined minimum analysis unit, wherein the visual graphic interface comprises a plurality of selection units, and the selection units respectively correspond to the exposure unit areas; and receiving parameter setting information through the plurality of selection units, and sending out a control signal according to the parameter setting information to adjust the exposure parameters of the micro light-emitting diode assemblies in the corresponding unit areas so as to define an exposure pattern.

FIG. 1 is a schematic view of an exposure system of some embodiments of the present invention;

FIGS. 2A and 2B are schematic diagrams of a smart mask with adjustable patterning according to some embodiments of the present invention;

FIG. 3 is a schematic diagram of an exposure pattern of a smart mask with adjustable pattern according to some embodiments of the present invention;

FIGS. 4A, 4B, and 4C are schematic partial patterns of a smart mask according to some embodiments of the present invention;

FIG. 5 is a schematic diagram of dark spot compensation for a smart mask according to some embodiments of the present invention;

FIG. 6 is a schematic diagram of a smart mask with adjustable patterns according to another embodiment of the present invention;

FIG. 7 is a schematic diagram of a registration mark in accordance with some embodiments of FIG. 6;

FIG. 8 is a schematic diagram of a control interface of a smart mask with adjustable patterns according to some embodiments of the present invention; and

FIG. 9 is a flow chart of steps of an exposure method of some embodiments of the present invention; and

FIG. 10 is a flow chart of steps of an exposure method of some embodiments of the present invention.

The present invention provides a new pattern-adjustable intelligent mask (smart mask with adjustable pattern), and an exposure apparatus and an exposure method using the same, so as to solve the problems mentioned in the background art and the above problems. In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. The following description of the various embodiments of the present invention is provided for illustration only and is not intended to represent all embodiments of the present invention or to limit the present invention to particular embodiments. In addition, the same component numbers may be used to represent the same, corresponding or similar components, and are not limited to representing the same components.

In order to clearly illustrate the inventive concepts of the present disclosure, the sizes, proportions and quantities of elements shown in the drawings may be modified, without necessarily being limited to the exact dimensions shown and described, in accordance with the principles of the present disclosure.

In the present disclosure, any reference to "first", "second", etc. is only used for describing different components, regions, layers or steps, and is not used for limiting the sequence of the components, regions, layers or steps (which is explicitly claimed in the claims, and is not limited thereto).

The terms "about" or "substantially" are used herein to indicate a range of numerical errors in the fabrication process in a manner that does not significantly alter the operation of the particular element or significantly affect the function or purpose of the element, as would be apparent to one of ordinary skill in the art. For example, if a range of "about 0.1 to 1" is described, it can include a range of 0% -5% deviation (provided that it does not significantly affect component operation/purpose/function).

The term "connected" or "coupled" as used herein does not limit the existence of any intervening elements between the elements. That is, two components connected or coupled to each other may mean that two components are directly connected/coupled to each other or connected/coupled to each other through other components.

The spatial relationships, such as "above …", "below …", "upward", "downward", "left side …", "right side …", etc., are exemplary based on the relative positions shown in the drawings, and are not intended to limit the configuration of the actual product.

FIG. 1 is a schematic view of an exposure apparatus of some embodiments of the invention. Referring to fig. 1, an exposure apparatus 100 (also referred to as a self-luminescence exposure system 100) includes a stage 110, a pattern-adjustable intelligent mask 120, a controller 130, and a mask clamping portion 140.

The carrier platform 110 has a carrier region 112 adapted to set an object to be exposed 50, wherein the object to be exposed 50 may be, for example, a wafer or a semiconductor substrate. In some embodiments, the supporting platform 110 can fix the object 50 to be exposed on the supporting area 112 by vacuum suction or mechanical clamping, but the invention is not limited thereto.

The smart mask 120 includes a plurality of micro Light Emitting Diode (LED) elements 122 (hereinafter, referred to as "micro LEDs"), wherein each micro LED 122 receives a control signal and determines a light emitting state (e.g., whether to light up, a lighting time, a brightness, etc.) based on the received control signal, thereby defining an exposure pattern. In some embodiments, the smart mask 120 may also be referred to as a Micro LED array lamp, which may be, for example, an array of Micro LEDs 122 and is directly or indirectly disposed on the base plate 121, wherein each Micro LED 122 may be independently or regionally selected to control the corresponding light emitting state, and a single Micro LED device 122 or a single Micro LED device 122 array block may form a minimum resolution unit of an exposure process (e.g., a yellow light process). The minimum resolution units form corresponding exposure patterns to irradiate the object 50 to be exposed, so that the object 50 to be exposed presents a photoresist pattern corresponding to the exposure patterns. It should be noted that the present invention is not limited to the kind of micro light emitting diode. Embodiments of the configuration of the smart mask 120 are described in further detail below.

The controller 130 is electrically connected to the micro LEDs 122 and configured to generate control signals to control the light emitting states of the micro LEDs 122 respectively. In some embodiments, the controller 130 may be a matrix circuit disposed in the bottom plate of the micro LEDs 122 for controlling the brightness and darkness of each micro LED 122.

The mask clamping portion 140 is disposed opposite to the supporting platform 110 for fixing the smart mask 120, wherein when the exposure apparatus 100 performs the alignment operation, the mask clamping portion 140 drives the smart mask 120 to align with the object 50 to be exposed disposed in the supporting area 112. In some embodiments, the mask holder 140 can be used to hold the smart mask 120 by vacuum suction or mechanical clamping, for example, but the invention is not limited thereto.

In some embodiments, the exposure apparatus 100 further comprises a detector 150. The detector 150 is used to detect whether each micro LED 122 is illuminated in response to the control signal, wherein the detector 150 can be, for example, a microscope set or an image sensor capable of observing the micro pattern in real time. In some embodiments, the detector 150 may also be used to identify the alignment marks of the smart mask 120 and the object 50 to be exposed, so as to obtain the relative position information between the smart mask 120 and the object 50 to be exposed according to the alignment marks. The following examples will be further illustrated.

In some embodiments, the exposure apparatus 100 executes control software to control the operation of the smart mask 120, for example, via the external computer system 10. For example, the computer system 10 may receive the light emission data of each micro light emitting diode detected by the detector 150 and correct the exposure parameters of the micro LEDs 122 of each/each unit area based on the light emission data. In some applications, the computer system 10 can be used to default the light intensity of the micro LED 122 in one or one unit area before factory shipment or before exposure, and compensate in advance to achieve the exposure uniformity. In addition, the control software of the exposure apparatus 100 may provide a simplified visual graphical interface (e.g., 12) to allow the user to select the pattern to be exposed and the minimum resolution unit of each lithography process in real time, adjust the exposure parameters in real time for exposure, and edit, read, store, and save any exposure pattern design and exposure parameters including, but not limited to: the brightness or darkness of the micro-leds, the intensity of the emitted light, the cumulative time of the continuous or flashing emission, etc. In some embodiments, the computer system 10 may further include control functions including a light intensity compensation function, a light emitting time control function, a light emitting mode control function, an exposure pattern and parameter storage and editing function, etc. for each single micro LED 122.

In some embodiments, the stage 110, the Mask holder 140 and the detector 150 in the exposure apparatus 100 can be implemented based on a general exposure apparatus mechanism, such as a common alignment exposure apparatus (Mask Aligner) or Stepper exposure apparatus (Stepper) mechanism. Therefore, the exposure apparatus 100 may further include, but is not limited to, a mechanism for adjusting the horizontal relative position of the substrate to be processed and the mask, and a mechanism for adjusting the relative angle of the substrate to be processed and the mask in the horizontal plane. In other words, the smart mask 120 is compatible with conventional exposure tool mechanisms. For example, using a contraposition exposure machine, the photolithography process for 4-inch (100 mm) wafer generally uses a 5-inch mask (127 mm x 127 mm); while an 8-inch (200 mm) wafer uses a 9-inch mask (228 mm x 228 mm), the smart mask 120 in this embodiment is fabricated by using micro LEDs 122, so that the above mask size can be realized on the premise of ensuring the line width requirement, and thus, the method is compatible with the conventional exposure equipment.

Specifically, the exposure apparatus 100 of the present embodiment may use the intelligent mask 120 to replace or cooperate with a conventional mask to perform an exposure process, so as to achieve the requirement of exposing or not exposing the photosensitive material in a specific area by the brightness and darkness of the light emitting diode. When exposure is performed by the exposure apparatus 100, the smart mask 120 may be first disposed on the mask holding portion 140 (i.e., on the original mask position of the conventional alignment type exposure machine), for example, the smart mask 120 may be fixed by a vacuum slot mechanism. The object 50 to be exposed is held by the fixed substrate of the conventional exposure machine, and is fixed by the carrying area 112 of the carrying platform 110 for fixing the mask and its fixing mechanism (such as vacuum suction tank). The light emitting surface of the smart mask 120 faces a side of the object 50 to be exposed (e.g., a process substrate) on which the photosensitive material 51 is disposed, wherein the photosensitive material 51 is disposed on the substrate 52 of the object 50 to be exposed, and the photosensitive material 51 may be, for example, a photoresist or a photosensitive polymer material, but the invention is not limited thereto. Generally, the photosensitive material 51 of the object 50 to be exposed faces upward, i.e., the light-emitting surface of the smart mask 120 faces downward. The exposure method can use the optical microscope or image sensor and mechanism of the common alignment type exposure machine to adjust the relative position of the object 50 to be exposed and the XY plane of the intelligent mask 120 to complete the alignment procedure, and use the exposure machine or similar mechanism to adjust the Z-direction distance between the process substrate plane and the intelligent mask 120 plane to the optimal exposure position to complete the pre-exposure action. Then, the lighting and illumination time of each micro LED 122 is controlled through the computer system 10 and the visual graphic interface 12 provided by the control software to achieve the desired exposure effect and exposure pattern. The lighting place of the micro LED 122 of a single/unit area is the exposed area 511 of the photosensitive material 51; the unexposed areas 512 of the photosensitive material 51 are formed where the micro LEDs 122 are not lit (dark) per unit area. The exposure pattern composed of the light and the dark of all the micro LEDs 122 and the dimension of the pattern to be actually subjected to the exposure process (e.g., photolithography) may be, for example, 1 to 1.

Compared with the conventional mask which only provides one pattern and is expensive, the innovative exposure apparatus 100 and the exposure method implemented by the exposure apparatus provided by the present disclosure can form the required exposure pattern from the micro LED 122 array in the intelligent mask 120 by only resetting the visual graphic interface 12 of the computer system 10 according to various different exposure pattern requirements, so that the exposure apparatus can be repeatedly used for multiple times, thereby greatly reducing the manufacturing cost. In addition, since the exposure apparatus 100 utilizes the computer system 10 and the control software thereof to control the single or multiple micro LEDs 122 to form the specific exposure pattern in real time, there is no need to wait for the time of manufacturing the mask, and the time cost of development is greatly reduced.

It should be noted that the smart mask described in the embodiments of the present disclosure is not similar to a conventional mask, but is only used for shielding light, and can be regarded as replacing the original functions of the exposure source and the mask (or as an integration of the exposure source and the conventional mask), and can be used with a conventional alignment exposure machine, so as to use the mechanism of the exposure machine to perform alignment and partial exposure parameter adjustment. In addition, the exposure apparatus 100 and the smart mask 120 thereof according to the present disclosure can provide a process performer to select to use the smart mask 120 or the conventional mask according to the critical dimension of different processes in the same manufacturing flow, and can be used in a single exposure mode or in an alternating mode. Because the traditional photomask can realize the design of thinner line width, the matching of the two can improve the flexibility of the process selection, thereby optimizing the process, and having the combined value and benefit.

An example of the application of the intelligent mask 120 is further described below with reference to the embodiment of fig. 2A to 2D. FIGS. 2A and 2B are schematic diagrams of a pattern-adjustable smart mask according to some embodiments of the present invention; fig. 2C and 2D are schematic diagrams of micro LEDs according to some embodiments of the present invention.

Referring to fig. 2A and fig. 2B, fig. 2A is a side view of an embodiment of the smart mask 220, and fig. 2B is a top view of the embodiment of the smart mask 220. In some embodiments, the micro LED array 222a formed by a plurality of micro LEDs 222 arranged in an array is regarded as a main component of the smart mask 220, and the smart mask 220 further includes a bottom plate 221 and a protection layer 223. The micro led array 222a is directly or indirectly mounted on the bottom plate 221. The protection layer 223 covers at least one or more of the micro LEDs 222, and the outermost light-emitting surface of the smart mask 220 is covered by the protection layer 223 as an example in the drawings, but the invention is not limited thereto. In addition, in some embodiments, the smart mask 220 may further include an optical adjustment layer, or the protection layer 223 itself may have an optical adjustment function.

In some embodiments, the micro LEDs 222 can be formed by micron-sized uv LED dies to form the micro LED array 222a, wherein the planar size of the micro LEDs 222 can be, for example, 0.1 to 100 microns, and particularly, can be, for example, between 5 to 20 microns. In some implementations, the planar size of the micro LED 222 can be, for example, between 0.1 micron and 20 microns. Furthermore, the micro LED 222 may emit light in a wavelength range of, for example, 200 nm to 450 nm, and in some applications, the micro LED 222 may emit light in a wavelength range of, for example, 200 nm to 400 nm.

In some embodiments, the micro LED 222 can be implemented by using Flip-chip type (Flip-chip type) and vertical type (vertical type) micro LED dies, which have different manufacturing processes and different structural configurations. For example, the micro LED 222 of the flip chip type includes a light emitting portion and two electrodes, wherein the two electrodes are disposed on the same side of the light emitting portion. The vertical micro LED 222 also includes a light emitting portion and two electrodes, which is different from the flip chip type in that the two electrodes are distributed on the upper and lower sides of the light emitting portion. Generally, the vertical type micro LED 222 can achieve higher resolution requirements.

Specifically, the size of the smart mask 220 may be similar to the size of a glass or quartz mask generally suitable for use in a conventional aligner, and the material of the bottom plate 221 may be glass, quartz, plastic, silicon carbide, and the thickness of the body thereof may be, for example, between 500 μm and 1 cm. The maximum illuminable area of the smart mask 220 (i.e., the area of the micro led array 222 a) may be, for example, between 100 square millimeters (mm) and 52900 mm, which may be, in some practical applications, between 625 mm and 52900 mm, which is roughly equivalent to a square with sides of 1 inch to 9 inches. The overall size of the smart mask 220 may be designed to be slightly larger than the size of the object to be exposed (e.g., 50), and the actual maximum illuminable area may be designed to be approximately equal to or smaller than the size of the object to be exposed.

In other words, the smart mask 220 can be designed to have a size and thickness similar to those of a conventional mask, so that it can be directly installed in a mask fixing position of a conventional aligner, and directly replace the original exposure light source and mask functions. The micro LEDs 222 assigned to the micro LED array 222a are used for self-luminescence to form an exposure pattern, thereby achieving the purpose of direct exposure.

The following describes the process of forming an exposure pattern by controlling the smart mask 220 more specifically with reference to fig. 3 to 5, wherein fig. 3 is a schematic view of the exposure pattern of the smart mask with adjustable pattern according to some embodiments of the present invention; fig. 4A-5B are schematic partial patterns of a smart mask according to some embodiments of the invention.

Referring to fig. 3, before performing the exposure process, a user may define a minimum resolution unit of the smart mask by using a computer system to draw the micro LED array into a plurality of exposure unit regions 310, wherein each exposure unit region may include a plurality of micro LEDs arranged in an x y array, and x and y are natural numbers that can be defined by the user. The dot squares are areas EA expected to be exposed, and the blank squares are areas NEA expected not to be exposed. Dimension P is the minimum line width required for this embodiment. Subsequently, fig. 4A to 4C illustrate a Micro LED exposure pattern corresponding to a region 300p consisting of 3 × 3 exposure unit regions 310 (i.e., minimum line width units).

In some embodiments, if the single micro LED size is slightly smaller than the minimum line width required by the embodiment, the single micro LED 322 with size L1 will be responsible for the exposure behavior of one exposure unit area 410 (i.e., the area requiring the minimum line width unit P1xP 1), as shown in fig. 4A. There is a slight spacing D1 between each two micro LEDs 422. In some embodiments, the distance D1 may be, for example, between 0.01 micron and 20 microns, and more particularly, may be, for example, between 1 micron and 4 microns, to meet the line width requirements of the exposure process. In some practical applications, the minimum line width unit P1 can be designed to be greater than or equal to 1 micrometer, and the spacing D1 between two adjacent micro LEDs 422 is less than or equal to 1 micrometer.

Referring to FIG. 4B, if the exposure pattern of the local area 300p of the embodiment of FIG. 3 is to be achieved, the micro LED 422 in the exposure unit area 410 expected to be exposed is driven to light (labeled ON); the micro LED 422 in the exposure unit area 410 that is not exposed will remain as a dark spot (labeled OFF). All of the lit micro LEDs 422 will form the desired exposure pattern. For all micro LEDs to be turned on, the turn-on sequence is not limited to a single sequential turn-on, multiple batches of turns-on, or a whole turn-on at a time.

In some embodiments, if the size of a single micro LED is much smaller than the minimum line width required by the embodiment, it means that a required exposure unit area 410 contains multiple micro LEDs, as shown in fig. 4C. To achieve the exposure pattern of the region 300P of the embodiment of FIG. 3, the exposure behavior of one exposure unit region 510 (i.e., the minimum required line width unit P2xP 2) will be dominated by the plurality of micro LEDs 522 of size L2, with a fine spacing D2 between each two micro LEDs. In some embodiments, the distance D2 may be, for example, between 0.01 micron and 20 microns, and more particularly, may be, for example, between 1 micron and 4 microns, to meet the line width requirements of the exposure process. In some implementations, the minimum line width unit P2 is less than or equal to 1 micron, and the spacing D2 between two adjacent micro LEDs 522 is less than or equal to 1 micron. For example, each exposure unit area 510 includes 4 × 4 micro LEDs, the micro LED array 522a in the exposure unit area 510 is expected to be driven to light up (labeled ON); the micro LED array 522a in the exposure unit area 410 that is not exposed will remain as a dark spot (labeled OFF). All of the lit micro LEDs 522 will form the desired exposure pattern. For all micro LEDs to be turned on, the turn-on sequence is not limited to a single sequential turn-on, multiple batches of turns-on, or a whole turn-on at a time.

In the embodiment of FIG. 4C, such an ultra-high resolution micro LED array may have micro LEDs that are somewhat permanent dark spots due to inherent local defects. In order to compensate the influence of the dark spots on the exposure process, the present disclosure further provides a control method of dark spot compensation to solve the above problem. Also taking the exposure pattern of the area 300p of the embodiment of fig. 3 as an example, fig. 5 is a schematic view showing the exposure pattern in the case of dark spots.

Referring to fig. 5, following the example of the disposition of the exposure unit areas 510 of the embodiment of fig. 4C, that is, each exposure unit area 510 includes 4 × 4 micro LEDs, the micro LED array 522a in the area EA expected to be exposed will be driven to light up (marked as ON); the micro LED array 522a in the area NEA expected not to be exposed is maintained as a dark spot (labeled OFF), wherein no matter the area EA expected to be exposed or the area NEA expected not to be exposed, there may be micro LEDs that are not working properly, such as a permanent dark spot (e.g., 522 b) caused by damaged micro LEDs, or a phenomenon of luminous intensity decay caused by long-term working aging of the micro LEDs. Although the damaged permanent dark spot (labeled as permanent OFF) is used as an example, it can be understood by those skilled in the art after referring to the following description that the compensation control described in the present embodiment can be applied to compensate for various types of micro LEDs that cannot work normally, and is not limited to the damaged permanent dark spot.

In some embodiments, when the dark spot is detected, the smart mask can compensate for the micro LEDs 522a around the permanent dark spot by adjusting the light emitting state, such as adjusting the light emitting brightness (e.g. adjusting the light emitting intensity of each micro LED or the total light emitting amount of all the micro LEDs in the exposure unit area) or directly increasing the expected light emitting time in the corresponding exposure unit area, so that each exposure unit area can maintain a uniform and equivalent exposure effect and maintain the stability of the manufacturing process.

In other words, when z micro LEDs in the exposure unit region are in the abnormal operation state, the light emitting state of at least one of the remaining normal operation micro LEDs in the exposure unit region is adjusted to compensate the z abnormal operation micro LEDs, wherein z is a natural number and z < x y.

The following describes a compensation method for adjusting the luminance. First, an exposed unit region 520 with a dead pixel as a permanent dark spot 503 is taken as an example, and the permanent dark spot 503 occupies 1/16 of the area of the exposed unit region 520. When the smart mask detects the dark spot 503 (which can be detected by the detector), the smart mask can select one or more micro LEDs around the dark spot 503 and increase the brightness of the light, so that the overall brightness of the exposure unit region 520 can be maintained at the brightness without the dark spot. Taking the exposure unit region 530 as an example, four bad dots in the exposure unit region 530 are the permanent dark dots 504-507, which account for 4/16 of the total minimum line width unit. When the smart mask detects the dark points 504-507, the smart mask can select one or more micro LEDs around the dark points 504-507 and increase the brightness thereof, so that the overall brightness of the exposure unit region 530 can be maintained at the brightness without the dark points and is substantially maintained at the same/similar brightness as the exposure unit region 520.

In other words, in an exposure unit area where all the micro LEDs are in the normal operation state, if one or more dark spots are generated in the exposure unit area under the condition that each micro LED in the micro LED array has the first brightness, the smart mask adjusts the light emitting brightness of at least one of the rest micro LEDs in the normal operation state in the exposure unit area to the second brightness larger than the first brightness. The control for adjusting the light emitting brightness may be, for example, to increase the current value of the remaining normally operating micro LEDs to the set compensation current value based on the number of dark spots, or to determine the compensation current value of the remaining normally operating micro LEDs by detecting the brightness of the exposure unit region 520, which is not limited in the present invention.

The following describes a compensation method for adjusting the light emission time. First, an exposed unit region 520 with a dead pixel as a permanent dark spot 503 is taken as an example, and the permanent dark spot 503 occupies 1/16 of the area of the exposed unit region 520. When the smart mask detects the dark spot 503, the smart mask selects one or more micro LEDs around the dark spot 503 and extends the light emitting period thereof, so that the exposure amount (i.e., the luminous flux per unit area in a certain period, lx ×) of the exposure unit region 520 can be maintained the same as that in the absence of the dark spot. For example, the smart mask can adjust the turn-on time of the remaining normally operating 15 micro LEDs in the exposure unit region 520 to 16/15 times, so that the exposure amount of the exposure unit region 520 can be maintained the same. Taking the exposure unit region 530 as an example, four bad dots in the exposure unit region 530 are the permanent dark dots 504-507, which account for 4/16 of the total minimum line width unit. When the smart mask detects the dark points 504-507, the smart mask can select one or more micro LEDs around the dark points 504-507 and extend the light-emitting period thereof, so that the exposure amount of the exposure unit region 530 can be maintained the same as that without the dark points. For example, the smart mask can adjust the turn-on time of the remaining normally operating 15 micro LEDs in the exposure unit region 530 to 16/12 times, so that the exposure amount of the exposure unit region 530 can be maintained the same and the brightness of the exposure unit region 520 can be maintained substantially the same/similar.

In other words, in the compensation mode, when z micro LEDs in the exposure unit region are in the abnormal operation state, the lighting time of at least one of the remaining micro LEDs in the normal operation state is adjusted to be longer than the second period of the original set period (or the first period). In some embodiments, the first period and the second period may conform to the following functional relationship:

wherein T1 is the first period, T2 is the second period, and n is a constant setting value for compensating environmental impact or process drift.

After the compensation, the micro LED array (whether having dark spots or not) in each exposure unit region can also form the expected exposure pattern. For all micro LEDs to be turned on, the turn-on sequence is not limited to a single sequential turn-on, multiple batches of turns-on, or a whole turn-on at a time. In addition, in some embodiments, as shown in FIG. 4C and FIG. 5, since the dimension L2 and the distance D2 are both smaller than the minimum line width P2 of the exposure process capability, the distance between two micro LEDs and the permanent dark spots (503 and 507) will not affect the continuity of the overall exposure pattern.

Referring to fig. 2A and 2B, the smart mask 220 may further include a plurality of alignment marks 224, wherein the alignment marks 224 are used to assist the exposure mechanism in alignment during the process. In some embodiments, the alignment mark 224 can be implemented by a visible light-opaque metal film. In other embodiments, the alignment mark 224 may also be matched with a micro LED to generate a new alignment mark on the object to be exposed.

In the embodiment of matching the alignment mark 224 using micro LED, the micro LED 222 for exposure process (hereinafter referred to as exposure micro LED 222) may be disposed in the central area CTA of the bottom plate 221, and the micro LED for generating alignment mark (hereinafter referred to as alignment micro LED) may be disposed in the peripheral area of the bottom plate 221 (i.e. the area of the bottom plate 221 except the central area CTA), which is illustrated as being disposed in/around the area of the alignment mark 224, but the invention is not limited thereto. In some embodiments, the alignment micro LEDs can also be disposed in the array of exposure micro LEDs 222, or portions of the exposure micro LEDs 222 can be controlled as alignment micro LEDs during positioning. In other words, the alignment Micro LEDs may be located outside the exposure Micro LED array 222a or inside the array 222a, as long as the alignment Micro LEDs can irradiate the exposure area of the object 50 to be exposed.

An embodiment of positioning micro LEDs is further described below with reference to fig. 6 and 7, wherein fig. 6 is a schematic diagram of an intelligent mask with adjustable patterns according to another embodiment of the present invention; FIG. 7 is a schematic diagram of alignment marks in accordance with some embodiments of FIG. 6.

Referring to fig. 6 and fig. 7, the embodiment is substantially the same as the embodiment of fig. 2, and the difference is that the alignment mark 624 region 224 of the smart mask 620 includes an alignment micro LED for assisting in forming the substrate alignment mark, in addition to the alignment mark. In the present embodiment, several alignment patterns, such as squares, crosses, etc., are included in the alignment mark 624 as an example, but the present invention is not limited to the shape of the alignment mark, and it is known in the art that the

alignment patterns

6241 and 6242 composed of metal thin films and the

alignment patterns

6243 and 6244 composed of micro LEDs 622' can be designed in the region of the alignment mark 624 based on the knowledge of the conventional photolithography process. The blank area 6245 in the alignment mark 624 region refers to an area where no visible or infrared light-opaque mark or structure is disposed, and the blank area 6245 may only include a bottom plate (e.g., 221), a protection layer (e.g., 223), and a visible and infrared light-transparent conductive thin film material wire, such as Indium Tin Oxide (ITO), Aluminum-doped Zinc Oxide (AZO), etc. Through the mixed design of the alignment patterns 6241-6244, the intelligent mask 620 can be mixed with the conventional mask to complete multiple stacked micro-structural components when performing the exposure process with the conventional common alignment type exposure machine. For example, if the first photolithography process is evaluated according to the usage requirement and the smart mask 620 is used for exposure, the alignment micro LEDs 622 '(e.g., 9 alignment micro LEDs 622' constituting the cross pattern) constituting the alignment pattern 6243 can be illuminated to generate a first set of alignment marks for subsequent processes. In other words, after the first exposure process, the object 50 to be exposed has an alignment mark corresponding to the alignment pattern 6243, and the exposure apparatus performs an alignment operation based on the alignment mark in the subsequent process. If the object 50 to be exposed has undergone at least one photolithography process and the object 50 to be exposed has alignment marks (e.g., alignment marks corresponding to the alignment patterns 6242) required by the subsequent processes, the exposure apparatus can perform alignment operation based on the opaque metal film alignment patterns 6242 on the smart mask 620 and the alignment marks on the object 50 to be exposed when performing the new exposure process.

Since the alignment marks on the object 50 may be blurred in each process after a plurality of processes, which may result in a reduction in alignment accuracy or a generation of alignment error/failure, in some embodiments, the smart mask 620 may generate new alignment marks on the object 50 to be exposed by the alignment micro LED 622' for use in subsequent processes, thereby solving the above-mentioned problems of reduction in alignment accuracy or alignment failure. Also taking fig. 7 as an example, when the object 50 to be exposed has alignment marks corresponding to the alignment patterns 6241, the exposure apparatus will perform alignment operation based on the alignment patterns 6241 in the alignment marks 624 and the alignment marks on the object 50 to be exposed when performing exposure with the smart mask 620. After the alignment is completed, the smart mask 620 is exposed and the alignment micro LEDs 622 '(e.g., 9 alignment micro LEDs 622' constituting the cross-shaped alignment pattern 6243) constituting the alignment pattern are turned on to generate a new alignment pattern on the object 50 to be exposed. The new alignment pattern can be used as a new alignment mark for the object 50 to be exposed for alignment in the subsequent process.

Although the above description is made by taking the formation of the new alignment pattern 6243 at a different position from the old alignment pattern 6241 as an example of generating a new alignment mark (i.e., the new alignment pattern 6243 is used as a new alignment mark of the object 50 to be exposed), the invention is not limited thereto. In some embodiments, the smart mask 620 may also define a new alignment pattern within/near the range of the old alignment mark of the object 50 to be exposed, so that the old alignment pattern and the new alignment pattern of the object 50 to be exposed are combined to form a new alignment mark. For example, in the case where the object 50 to be exposed has alignment marks corresponding to the alignment patterns 6242, when the smart mask 620 is used for exposure, the exposure apparatus will perform alignment operation based on the alignment patterns 6242 in the alignment marks 624 and the alignment marks on the object 50 to be exposed. After the alignment is completed, the smart mask 620 is exposed and the alignment micro LEDs 622 '(e.g., 16 micro LEDs 622' forming 4 rectangular alignment patterns 6244) constituting the alignment pattern are turned on to generate a new alignment pattern on the object 50 to be exposed. At this time, the old rectangular outline pattern (corresponding to 6242) on the object 50 to be exposed and the newly defined 4 smaller rectangular patterns 6244 can be combined to form a new white-reversed cross-shaped alignment pattern as a new alignment mark for alignment in the subsequent process. By the above method of forming a new alignment mark by combining the old alignment pattern and the newly added alignment pattern, the alignment accuracy requirement of the subsequent process can be maintained, the consumed area of the alignment mark can be effectively limited, and the wafer utilization rate can be further improved.

FIG. 8 is a schematic diagram of a control interface of a smart mask with adjustable patterns according to some embodiments of the present invention. Referring to fig. 8, in the present embodiment, the visual graphical interface provided by the control software may be configured with (but is not limited to) the following functions: (1) the brightness setting of each single micro LED in the left exposure area can be directly selected (and the local exposure area can be enlarged and reduced through a mouse wheel or a keyboard dark key); (2) setting full screen as bright (marked as 'All clear') or full screen as dark (marked as 'All dark') by one key, negative mode (marked as 'reverse color'), that is, the bright-dark and dark of one-key conversion pattern become bright, and when selecting positive photoresist and negative photoresist, it can directly switch in the same pattern; (3) main parameter setting functions including light Intensity (denoted as "Intensity"), exposure Time (denoted as "Time"), exposure frequency, and the like; (4) the stored/read pattern corresponds to all Exposure parameter settings (stored pattern/parameter is labeled "Save", "Save as", read pattern is labeled "Load pattern", read parameter is labeled "Load recipe"), perform Exposure (labeled "Go Exposure"), and so on.

In addition, in some embodiments, the control software also includes a light-emitting compensation function for each single micro LED, that is, the software can set the compensation degree of each single micro LED according to some direct or indirect result of detecting the light-emitting intensity of each micro LED, so as to achieve the overall light-emitting uniformity. For example, the smart mask of the embodiment of the disclosure can directly or indirectly scan the light emission intensity of all micro LEDs in the exposure range before the factory shipment, so as to know the light emission uniformity in the entire exposure range. During compensation, the controller assigns a higher current or voltage to the micro LEDs with lower light intensity in advance so as to adjust the light intensity of the micro LEDs to an overall expected average value; the micro LED with the brighter light intensity is preset to be assigned with a lower current or voltage so as to adjust the light intensity to the overall expected average value. In addition, the compensation setting mentioned here also includes increasing the local luminous intensity of the surrounding micro LED of the permanent dark spot to the average value of the overall expected luminous intensity. And then, generating a corresponding compensation setting code according to the compensation plan, so that the client can directly input the compensation setting code when a software program is executed for the first time, and the initial compensation setting for the Micro LED array lamp is completed. This procedure is used to meet the calibration requirements before shipment, after maintenance or before exposure.

In some embodiments, the computer system and the control software can pre-set the light intensity of the Micro LEDs in one or more exposure unit areas before factory shipment or before exposure through initial measurement to perform pre-compensation for exposure uniformity. The control software also provides a concise interface to let the user select the pattern to be exposed and the minimum resolution unit of each lithography process in real time, adjust the exposure parameters in real time for exposure, and can edit, read, store, and store any exposure pattern design and exposure important parameters including: light or darkness of the Micro LED, luminous intensity, time of accumulation of continuous or flashing light emission, and the like.

FIG. 9 is a flow chart of steps of an exposure method of some embodiments of the present invention. Referring to fig. 9, the exposure method of the present embodiment can be implemented by matching the hardware, operations, and interfaces described in the embodiments of fig. 1 to 8. The exposure method comprises the following steps: first, an exposure apparatus (e.g., 100) performs an alignment operation to align a plurality of first micro led devices (e.g., 122/222/422/522/622) arranged in an array on a smart mask (e.g., 120/220/620) with an object to be exposed (e.g., 50), and to make light emitting surfaces of the plurality of first micro led devices (e.g., a side of a base plate 121/221 on which the first micro led devices are arranged) face the object to be exposed (step S910). For example, the exposure apparatus may use an image sensor or a Charge Coupled Device (CCD) to identify/identify alignment marks on the smart mask and the object to be exposed, so as to obtain position information of the smart mask and the object to be exposed, and then adjust the relative positions of the smart mask and the object to be exposed based on the position information, for example, the alignment marks on the smart mask and the object to be exposed may be adjusted to overlap each other in the same axial direction, so as to achieve the alignment/alignment operation. Then, the smart mask may utilize the controller (e.g., 130) to send a first control signal to the plurality of first micro led devices, so that the plurality of first micro led devices illuminate and display a first light pattern, which may be, for example, the light pattern shown in fig. 3, in response to the control signal (step S920); and irradiating the object to be exposed with the first light emitting pattern to define a first exposure pattern on the object to be exposed (step S930). The exposure pattern may be, for example, a pattern for forming a circuit on the conductive layer or a pattern for forming a via hole on the insulating layer, which is not limited in the present invention. After the exposure process is completed, the exposed object may be subjected to other processes, such as development, hard baking, etching and/or photoresist removal, etc., but the invention is not limited thereto.

After the subsequent processes are completed, if the object needs to perform the next exposure process according to the requirement, the smart mask of this embodiment only needs to use the controller to send the second control signal to the plurality of exposure micro LEDs after the alignment operation, so that the plurality of exposure micro LEDs light up and display the second light-emitting pattern in response to the control signal (i.e., the above steps S910 to S930 are repeatedly performed), and the second exposure process can be implemented without replacing a new mask.

In some embodiments, the smart mask can also use the alignment micro LED to form an alignment mark on the object to be exposed for alignment in the subsequent process. For example, the smart mask may send an alignment signal to the alignment micro LED by using the controller, so that the alignment micro LED is lighted in response to the alignment signal and forms an alignment mark on the object to be exposed (step S940). In step S940, if the object to be exposed is an unprocessed wafer (without alignment marks), the smart mask can use the alignment micro LED to form a first alignment mark on the wafer for alignment in the subsequent process; if the object to be exposed is a wafer with alignment marks, the intelligent photomask can be aligned based on the existing alignment marks, and the alignment marks of the wafer are updated by the alignment micro LED during exposure, so as to maintain the alignment accuracy of the subsequent process. For a specific implementation example of step S940, reference may be made to the description of the embodiments in fig. 6 and fig. 7, and details are not repeated herein. It should be noted that, although step S940 is shown as being continued after step S930 in the step flow of fig. 9, in practical applications, the two steps are not necessarily sequential, and may be executed before step S930 or simultaneously with step S940.

In some embodiments, the exposure method may further include a correction compensation step S900 before step S910. The correction compensation step S900 includes: detecting whether any exposure micro LED in any exposure unit area is in a state of being incapable of working normally (step S902); when z exposure micro LEDs in the exposure unit region are in the abnormal working state, adjusting the light emitting state of at least one of the remaining exposure micro LEDs in the normal working state in the corresponding exposure unit region to compensate the z exposure micro LEDs which are not in the normal working state (step S902). For a specific implementation example of step S902, reference may be made to the description of the embodiment in fig. 5, and details are not repeated herein.

Fig. 10 is a flowchart illustrating steps of a method for forming an exposure pattern of a smart mask according to some embodiments of the present invention. Referring to fig. 10, the exposure pattern forming method of the present embodiment can also be implemented by matching the hardware, operations, and interfaces described in the embodiments of fig. 1 to 8. The exposure pattern forming method includes the steps of: defining a minimum resolution unit of the micro led device array (e.g., 222a/522 a) such that the micro led device array is divided into a plurality of exposure unit areas (e.g., 310/510/520/530), wherein each exposure unit area includes at least one micro led device (step S10); generating a visual graphical interface (e.g., the interface in the embodiment of fig. 8) based on the defined minimum resolution unit, wherein the visual graphical interface includes a plurality of pick units (e.g., a grid area on the left side of fig. 8, each grid may represent a pick unit, for example), and the pick units respectively correspond to the exposure unit areas (step S1020); receiving parameter setting information (for example, light or darkness of the Micro LED, light intensity, time accumulated by continuous light emission or blinking light emission, etc.) through the plurality of selecting units (step S1030); and sending out a control signal according to the parameter setting information to adjust the exposure parameters of the micro light emitting diode assemblies in the corresponding unit areas, so as to define an exposure pattern (step S1040).

In addition, it should be noted that the present disclosure is described below in terms of various embodiments in order to clearly illustrate various inventive features of the present disclosure. But not to mean that the various embodiments can only be practiced individually. One skilled in the art can design the various embodiments based on different requirements, or can design components/modules of different embodiments based on different requirements. In other words, the embodiments taught by the present disclosure are not limited to the aspects described in the following embodiments, but include various combinations and permutations of various embodiments/elements/modules as appropriate, as will be described in the foregoing.

Claims

A smart mask with adjustable patterns, comprising: a base plate; a plurality of first micro-LED assemblies (micro-LEDs) arranged in an array on the base plate; and a protection layer covering at least one of the plurality of micro light emitting diode components, wherein at least one of the plurality of first micro light emitting diode components has a size between 0.1 micrometer and 100 micrometers, and a distance between two adjacent first micro light emitting diode components of the plurality of first micro light emitting diode components is between 0.01 micrometer and 20 micrometers, wherein the plurality of first micro light emitting diode components determine a light emitting state based on a control signal received from a circuit on the base plate, thereby defining an exposure pattern.
The pattern adjustable smart mask of claim 1, wherein a light emitting array area composed of said plurality of first miniature light emitting diode assemblies is between 625 square millimeters (mm) to 52900 square millimeters.
The patternwise-adjustable smart mask of claim 1, wherein the plurality of first micro light-emitting diode elements emit light in a wavelength range between 200 nm and 400 nm.
The pattern adjustable smart mask of claim 1, wherein the base plate has a first area and a second area, the first micro light emitting diode devices being disposed in the first area.
The intelligent mask with adjustable pattern of claim 4, further comprising: a plurality of second micro-LED assemblies (micro-LEDs) disposed on the second region of the substrate and controlled to display an alignment pattern.
The patternable smart mask of claim 5, wherein the first region comprises a central region of the base plate and the second region comprises a peripheral region of the base plate.
The intelligent mask of claim 1, wherein the first micro LED devices are divided into a plurality of exposure unit areas, and at least one of the exposure unit areas comprises a plurality of the first micro LED devices arranged in an x y array, wherein x and y are natural numbers.
The intelligent mask of claim 7, wherein when z of the first micro LED devices in the one of the exposure unit regions are in the abnormal operation state, the light emitting state of at least one of the rest of the first micro LED devices in the normal operation state in the one of the exposure unit regions is adjusted to compensate for the z of the first micro LED devices in the abnormal operation state, wherein z is a natural number and z < x y.
The patternable smart mask of claim 8, wherein the first plurality of micro light emitting diode components are controlled to remain illuminated during a first period when the first plurality of micro light emitting diode components are in a normal operating state.
The patternable smart mask of claim 9, wherein when z of said first micro led devices in said one of said exposure unit regions are in a non-normal operation state, the lighting time of at least one of said remaining first micro led devices in a normal operation state is adjusted to be longer than a second period of said first period.
The patternable smart mask of claim 10, wherein the first period and the second period satisfy the following relationship:
(ii) a Wherein T1 is the first period, T2 is the second period, and n is a constant.
The patternwise-adjustable smart mask of claim 8, wherein the first plurality of micro light-emitting diode components are controlled to have a first brightness when the first plurality of micro light-emitting diode components are in a normal operating state.
The pattern-adjustable smart mask of claim 12, wherein when z of the first micro led devices in the one of the exposure unit areas are in a non-normal operation state, the brightness of at least one of the rest of the first micro led devices in the normal operation state is adjusted to a second brightness larger than the first brightness.
The patternable smart mask of claim 7, wherein each of the plurality of exposure unit areas is less than or equal to a minimum line width in the exposure pattern.
The patternable smart mask of claim 1, wherein at least one of the plurality of first micro light emitting diode elements has a size between 0.1 microns and 20 microns.
The patternable smart mask of claim 1, wherein a pitch between at least two adjacent first micro led devices of the plurality of first micro led devices is between 1 micron and 4 microns.
An exposure apparatus comprising: the bearing platform is provided with a bearing area suitable for setting an object to be exposed; a pattern-adjustable smart mask including a plurality of first micro-light emitting diode (micro-LED) devices, wherein each of the first micro-LED devices receives a control signal and determines a light emitting state based on the received control signal, thereby defining an exposure pattern; the controller is electrically connected with the plurality of first micro light-emitting diode components and used for generating the control signal so as to respectively control the light-emitting states of the plurality of first micro light-emitting diode components; and the photomask clamping part is configured relative to the bearing platform and used for fixing the intelligent photomask with the adjustable pattern, wherein when the exposure equipment executes the alignment operation, the photomask clamping part drives the intelligent photomask with the adjustable pattern to be aligned with an object to be exposed arranged on the bearing area.
The exposure apparatus of claim 17, wherein at least one of the plurality of first micro light emitting diode elements has a size between 0.1 micron and 100 microns.
The exposure apparatus of claim 17, wherein at least one of the first plurality of micro light emitting diode assemblies has a size between 0.01 microns and 20 microns.
The exposure apparatus of claim 17, wherein a pitch between at least two adjacent first micro light emitting diode assemblies of the plurality of first micro light emitting diode assemblies is between 0.01 microns and 1 micron.
The exposure apparatus of claim 17, wherein a pitch between at least two adjacent first micro light emitting diode assemblies of the plurality of first micro light emitting diode assemblies is between 1 micron and 4 microns.
The exposure apparatus of claim 17, further comprising: a detector for detecting whether the first micro light emitting diode assemblies are lighted in response to the control signal.
An exposure method for semiconductor process comprises: aligning a base plate provided with a plurality of first micro light emitting diode assemblies (micro-LEDs) composed in an array with an object to be exposed, and directing light emitting surfaces of the plurality of first micro light emitting diode assemblies toward the object to be exposed; sending a first control signal to the plurality of first micro light emitting diode assemblies, causing the plurality of first micro light emitting diode assemblies to light up and display a first light emitting pattern in response to the control signal; and irradiating the object to be exposed with the first light-emitting pattern, thereby defining a first exposure pattern on the object to be exposed.
The exposure method for semiconductor processing according to claim 23, further comprising: sending a second control signal to the plurality of first micro light emitting diode assemblies to enable the plurality of first micro light emitting diode assemblies to light up and display a second light emitting pattern in response to the control signal; and irradiating the object to be exposed with the second light-emitting pattern, thereby defining a second exposure pattern on the object to be exposed.
The method of claim 23, wherein a plurality of second micro led devices are further disposed on the base plate, the method further comprising: and sending an alignment signal to the plurality of second micro light-emitting diode assemblies to enable the plurality of second micro light-emitting diode assemblies to be lightened in response to the alignment signal, and displaying an alignment pattern to irradiate the object to be exposed so as to define an alignment mark corresponding to the alignment pattern on the object to be exposed.
The exposure method for semiconductor manufacturing processes according to claim 23, wherein the step of aligning a plurality of first micro light emitting diode assemblies (micro-LEDs) in an array with an object to be exposed and directing light emitting surfaces of the plurality of first micro light emitting diode assemblies toward the object to be exposed comprises: identifying a first alignment mark on the bottom plate and a second alignment mark on the object to be exposed so as to obtain position information of the first alignment mark and the second alignment mark; and adjusting the relative position of the base plate and the object to be exposed based on the position information.
The method of claim 23, wherein the first alignment mark and the second alignment mark correspond to a same first alignment pattern, and the bottom plate further comprises a plurality of second micro led devices, the method further comprising: sending an alignment signal to the plurality of second micro light emitting diode assemblies, enabling the plurality of second micro light emitting diode assemblies to be lightened in response to the alignment signal, and displaying a second alignment pattern to irradiate the object to be exposed so as to generate a third alignment mark on the object to be exposed based on the second alignment pattern.
The exposure method for semiconductor processing according to claim 27, wherein the third alignment mark comprises a combination of the first alignment pattern and the second alignment pattern.
The exposure method for semiconductor processing according to claim 23, further comprising: detecting whether the plurality of first micro light emitting diode assemblies are illuminated in response to the first control signal.
A pattern-adjustable intelligent mask suitable for use with an exposure apparatus, the intelligent mask comprising: the bottom plate is suitable for being arranged on a light shield clamping part of the exposure equipment and is fixed by the illumination clamping part; a plurality of first micro-LED assemblies (micro-LEDs) arranged in an array on the base plate for displaying a light emitting pattern defining an exposure pattern by being illuminated; and a protective layer covering at least one of the plurality of micro light emitting diode components, wherein at least one of the plurality of first micro light emitting diode components has a size of 0.1 to 20 micrometers, and the number of the plurality of first micro light emitting diode components is set to make the array have a light emitting area of 625 to 52900 square millimeters.
The smart Mask of claim 30, wherein the exposure tool adapted for use with the smart Mask comprises a Mask Aligner (Mask Aligner) or a Stepper (Stepper).
The patternable smart mask of claim 30, wherein the mask holder comprises a vacuum suction groove.
An exposure pattern forming method of an intelligent light shield, wherein the intelligent light shield comprises a plurality of micro light-emitting diode components which are arranged in an array, the exposure pattern forming method comprises the following steps: defining a minimum analysis unit of the micro light-emitting diode component array so as to divide the micro light-emitting diode component array picture into a plurality of exposure unit areas, wherein each exposure unit area comprises at least one micro light-emitting diode component; generating a visual graphic interface based on the defined minimum analysis unit, wherein the visual graphic interface comprises a plurality of selection units, and the selection units respectively correspond to the exposure unit areas; and receiving parameter setting information through the plurality of selection units, and sending out a control signal according to the parameter setting information to adjust the exposure parameters of the micro light-emitting diode assemblies in the corresponding unit areas so as to define an exposure pattern.
The method according to claim 33, wherein the exposure parameters include one or more of a turn-on/off, a light intensity, a continuous light-emitting time, and a flicker light-emitting time integrated value of the micro light-emitting diode assembly.