WO2021047375A1 - 等离子体系统以及过滤装置 - Google Patents

等离子体系统以及过滤装置 Download PDF

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Publication number
WO2021047375A1
WO2021047375A1 PCT/CN2020/110414 CN2020110414W WO2021047375A1 WO 2021047375 A1 WO2021047375 A1 WO 2021047375A1 CN 2020110414 W CN2020110414 W CN 2020110414W WO 2021047375 A1 WO2021047375 A1 WO 2021047375A1
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WO
WIPO (PCT)
Prior art keywords
filter
chamber
plasma system
adapter
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/110414
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English (en)
French (fr)
Inventor
陈鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
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Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to KR1020227007492A priority Critical patent/KR102459959B1/ko
Priority to US17/641,415 priority patent/US11705307B2/en
Publication of WO2021047375A1 publication Critical patent/WO2021047375A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/32119—Windows
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching

Definitions

  • the embodiments of the present invention relate to the field of semiconductor manufacturing technology, and in particular, to a plasma system and a filter device applied to the plasma system.
  • the work piece before performing processes such as deposition on the work piece (such as a wafer), the work piece is pre-cleaned to remove impurities on the work piece.
  • the specific process of the pre-cleaning treatment is: ionizing process gases such as argon, helium, hydrogen, etc. to form a plasma, the free radicals in the plasma will undergo a reduction reaction with the oxide impurities on the work piece to achieve impurities Removal.
  • the ions in the above-mentioned plasma may have a negative impact on the materials on the work piece.
  • the ions in the above-mentioned plasma may have a negative impact on the materials on the work piece.
  • the ions in the above-mentioned plasma may have a negative impact on the materials on the work piece.
  • hydrogen ions if hydrogen ions are contained in the plasma, they will enter the low-k material. Materials with electrical coefficients, leading to deterioration of materials with low dielectric coefficients, resulting in process results that are not as expected.
  • the embodiment of the present invention aims to solve at least one of the technical problems existing in the prior art, and discloses a plasma system and a filtering device, which can prevent the ions in the plasma from negatively affecting the material on the work piece, thereby Improve product performance.
  • a plasma system includes a dielectric window, a first adapter, a lower electrode platform, and a filter device.
  • the area surrounded by the dielectric window is set as a first chamber, and the first chamber is used for accommodating plasma.
  • the first adapter is arranged below the dielectric window, and the area surrounded by the first adapter is arranged as a second cavity.
  • the lower electrode platform is placed in the second chamber, and the lower electrode platform is used to carry a work piece.
  • the filter device includes a filter part, a first extension part and a second extension part, wherein the filter part is placed at the junction of the first chamber and the second chamber, and the filter part has a plurality of Through holes for filtering ions in the plasma when the plasma in the first chamber enters the second chamber through each through hole;
  • An extension portion extends from the filter portion in a first direction and is placed on the first adapter; the second extension portion is located at a position adjacent to the first extension portion from the filter portion.
  • the two directions extend to the inner side of the first adapter to support the filter part; the second direction is perpendicular to the first direction.
  • the plasma in the first chamber enters the second chamber through the through holes in the filter part, which can effectively treat the passing
  • the ions in the plasma are filtered out to prevent the ions from entering the low-k material, thereby causing deterioration of the low-k material.
  • the first extension part of the above-mentioned filter device on the first adapter, the installation and positioning of the filter device can be realized, and the second extension part can be used to extend to the inside of the first adapter, which can support the filter.
  • the filter device is integrally formed by the filter part, the first extension part and the second extension part, there is no assembly gap between the three Under such a structure, the integrally formed filter device can avoid plasma bombardment of the gap in the assembly of the element, which can greatly reduce the frequency of replacement of the filter device, thereby reducing the cost.
  • a filtering device applied to a plasma system includes a dielectric window and an adapter set below the dielectric window, the area surrounded by the dielectric window is set as a first chamber, and the first chamber is used for accommodating Plasma, the area surrounded by the adapter is set as a second chamber, and the plasma system further includes a lower electrode platform placed in the second chamber, and the lower electrode platform is used to carry
  • the work piece is characterized in that the filter device includes a filter part, a first extension part and a second extension part, wherein the filter part is placed at the junction of the first chamber and the second chamber, And the filter part has a plurality of through holes, which are used to treat the ions in the plasma when the plasma in the first chamber enters the second chamber through each through hole.
  • the first extension portion extends from the filter portion in a first direction and is placed on the first adapter; the second extension portion extends from the filter portion adjacent to the first
  • An extension part is located in the second direction and extends to the inner side of the first adapter for supporting the filter part; the second direction is perpendicular to the first direction.
  • the plasma system can effectively filter out the ions in the passing plasma through the filter device disclosed in this embodiment, and prevent the ions from entering the low-k material, thereby causing deterioration of the low-k material.
  • the first extension part of the above-mentioned filter device on the first adapter, the installation and positioning of the filter device can be realized, and the second extension part can be used to extend to the inside of the first adapter, which can support the filter.
  • the filter device is integrally formed by the filter part, the first extension part and the second extension part, there is no assembly gap between the three Under such a structure, the integrally formed filter device can avoid plasma bombardment of the gap in the assembly of the element, which can greatly reduce the frequency of replacement of the filter device, thereby reducing the cost.
  • FIG. 1 is a schematic diagram of a plasma system according to an embodiment of the present invention.
  • Fig. 2 is a schematic diagram of a filtering device according to an embodiment of the present invention.
  • 3A to 3B are detailed structural diagrams of the first extension part of the filter device according to an embodiment of the present invention.
  • FIGS 4A to 4B are top views of the first extension part of the filter device according to an embodiment of the present invention.
  • 5A to 5B are side views of the second extension part of the filter device according to an embodiment of the present invention.
  • 6A to 6C are schematic diagrams of the thickness of the filter part and the first extension part of the filter device according to an embodiment of the present invention.
  • FIG. 7A to 7F are diagrams of simulation results according to an embodiment of the present invention.
  • Fig. 8 is a side view of a filter part according to an embodiment of the present invention.
  • 9A to 9C are diagrams of simulation results according to an embodiment of the present invention.
  • Fig. 10 is a side view of a plasma system according to another embodiment of the present invention.
  • Fig. 11 is a side view of a plasma system according to yet another embodiment of the present invention.
  • Fig. 12 is a side view of an adapter and a shield according to an embodiment of the present invention.
  • first and second features are in direct contact with each other; and may also include
  • additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact.
  • present disclosure may reuse component symbols and/or labels in multiple embodiments. Such repeated use is based on the purpose of brevity and clarity, and does not in itself represent the relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms here such as “below”, “below”, “below”, “above”, “above” and similar, may be used to facilitate the description of the drawing in the figure
  • the relationship between one component or feature relative to another component or feature is shown.
  • the original meaning of these spatially-relative vocabulary covers a variety of different orientations of the device in use or operation, in addition to the orientation shown in the figure.
  • the device may be placed in other orientations (for example, rotated 90 degrees or in other orientations), and these spatially-relative description vocabulary should be explained accordingly.
  • a pre-cleaning chamber When processing work pieces (such as wafers), especially when performing silicon vias and packaging on work pieces, a pre-cleaning chamber is required.
  • the pre-cleaning chamber is used to clean the surface of the work piece to be processed. Impurities are removed to facilitate the effective progress of the subsequent physical vapor deposition process.
  • the general pre-cleaning chamber is to excite gas, such as argon, helium, hydrogen, etc. into plasma, and use the plasma to physically bombard impurities and chemically react with them to achieve the treatment of removing impurities from the work piece.
  • gas such as argon, helium, hydrogen, etc.
  • the present embodiment discloses a plasma system and a filter device applied to the plasma system, which can effectively reduce the reaction of ions (such as hydrogen ions) with low dielectric coefficient materials to avoid the occurrence of the above-mentioned situation.
  • Fig. 1 is a schematic diagram of a plasma system 1 according to an embodiment of the present invention.
  • the plasma system 1 may be a pre-cleaning device for reacting and removing impurities such as oxides in trenches or holes on a work piece (such as a wafer).
  • the plasma system 1 includes a dielectric window 11, a first adapter 12, a lower electrode platform 13, a radio frequency source 14, a matching circuit 15, an induction coil 16, a metal barrel 17 and a filter device 18.
  • the area surrounded by the dielectric window 11 is set as the first chamber CH1.
  • the dielectric window 11 has a hemispherical shape. However, this is not a limitation of the embodiment of the present invention.
  • the dielectric window 11 may have different shapes, and other changes regarding the dielectric window 11 It will be explained in subsequent paragraphs.
  • the first adapter 12 is disposed under the dielectric window 11 and grounded, and the area surrounded by the first adapter 12 is set as the second chamber CH2.
  • the plasma system 1 fills the first chamber CH1 with reactant gases (such as helium, argon, hydrogen, etc.) through a lateral air inlet method, for example, the first adapter 12 is provided There is a first gas passage for conveying the reaction gas into the first chamber CH1.
  • reactant gases such as helium, argon, hydrogen, etc.
  • the lower electrode platform 13 is placed in the second chamber CH2 and is used to carry the work piece.
  • the lower electrode platform 13 may be an electrostatic chuck, and the temperature of different positions of the work piece can be independently adjusted by means of multi-zone heating to improve the temperature uniformity of the work piece.
  • the radio frequency source 14 applies radio frequency power to the induction coil 16 through the matching circuit 15.
  • the matching circuit 15 is used to adjust and match the impedance behind the radio frequency source 14 so that the loaded radio frequency power achieves the maximum coupling efficiency.
  • the induction coil 16 has a barrel shape and surrounds the dielectric window 11, for example, a cylindrical three-dimensional spiral coil.
  • the induction coil 16 is a cylindrical three-dimensional spiral coil, and has a coil with more than 2 turns, and each turn of the coil consists of a horizontal section of 3/4 of the circle.
  • the induction coil 16 is used to couple radio frequency power into the first chamber CH1, and ionize and couple the reaction gas in the first chamber CH1 into plasma.
  • the metal barrel 17 is disposed on the first adapter 12 and surrounds the induction coil 16, and the metal barrel 17 is grounded by contacting with the first adapter 12, thereby performing electromagnetic shielding.
  • the filter device 18 is an integral structure, and the filter device 18 includes a conductive material, that is, the filter device 18 is made of a conductive material. In some embodiments, the filter device 18 may be made of aluminum.
  • the filter device 18 realized by an integrally formed structure can avoid plasma bombardment of the gap in the component assembly, greatly reduce the frequency of replacement of the filter device 18, and thereby reduce the cost. 1 and 2 at the same time, the filter device 18 includes a filter portion 181, a first extension portion 182, and a second extension portion 183. Wherein, the filter part 181 is placed at the junction of the first chamber CH1 and the second chamber CH2 to isolate the first chamber CH1 from the second chamber CH2, and the filter part 181 has a plurality of through holes.
  • the two ends of the are respectively connected to the first chamber CH1 and the second chamber CH2, so that the plasma in the first chamber CH1 can enter the second chamber CH2 through each through hole; at the same time, the filter 181 is used to The ions in the plasma passing through each through hole are filtered out.
  • the multiple through holes of the filter 181 filter the ions in the plasma (such as argon ions, helium ions, hydrogen ions, etc.) to prevent ions from entering the second After the chamber CH2 reacts with the work piece on the lower electrode platform 13, the work piece is deteriorated, and the result of the subsequent processing is not as expected.
  • the arrangement density of the plurality of through holes on the filter portion 181 is in the range of 0.7 through holes/square centimeter to 3 through holes/square centimeter.
  • the arrangement density of the through holes can be changed according to the speed of the process efficiency. In detail, when the process rate is required to be high, the arrangement density of the through holes can be appropriately increased, and vice versa.
  • FIGS. 3A to 3B are detailed structural diagrams of the first extension portion 182 according to an embodiment of the present invention.
  • the first extension portion 182 extends in the first direction from the filter portion 181 and is placed on the first adapter 12 so as to be able to form a good ground by contacting the first adapter 12.
  • the first extension portion 182 extends from the circumferential side of the filter portion 181 in the first direction as shown in FIGS. 3A and 3B, and the protruding portion is superimposed on the upper end surface of the first adapter 12 to achieve Conductive contact is possible.
  • a first gas passage is provided in the first adapter 12, and the first gas passage is connected to an external reactive gas source (not shown in the figure), and the gas outlet of the first gas passage The end is located on the upper surface of the first adapter 12 and is located between the first extension 182 and the dielectric window 11 so as to be able to communicate with the inside of the first chamber CH1.
  • the reaction gas (such as helium, argon, hydrogen, etc.) can directly enter the first chamber CH1 through the gas passage.
  • the reaction gas entering the first chamber CH1 is ionized to form plasma, and the plasma in the first chamber CH1 can enter the second chamber CH2 through each through hole; at the same time, the filter 181 treats the plasma passing through each through hole.
  • the ions in the ions are filtered out to prevent the ions from reacting with the work piece after entering the second chamber CH2, which will cause the work piece to deteriorate, and then the process result of the subsequent processing will not be as expected.
  • the aforementioned air intake method is not a limitation of this embodiment.
  • the structure of the first extension portion 182 shown in FIG. 3A is different. Except for this, the other structures are the same, and will not be repeated here.
  • a part of the first extension 182 is attached to the upper surface of the first adapter 12, and the remaining part is arranged above the first adapter 12 at intervals.
  • the first extension 182 has a stepped structure, for example, includes a first lower surface 1821 and a second lower surface 1822.
  • the first lower surface 1821 is disposed on the first adapter 12 and is connected to the first
  • the upper surface of the adapter 12 is attached to form a good grounding.
  • the second lower surface 1822 is located on the side of the first lower surface 1821 away from the filter portion 181, and the second lower surface 1822 is located in the axial direction of the filter portion 181.
  • the upper position is higher than the position of the first lower surface 1821 in the axial direction of the filter portion 181, so that the second lower surface 1822 and the upper surface of the first adapter 12 form a second gas through which the reaction gas can pass. path. Specifically, as shown in FIG.
  • the aforementioned first gas passage is provided in the first adapter 12, and the first gas passage is connected to an external reaction gas source (not shown), and the first gas passage is The outlet end is located on the upper surface of the first adapter 12 and is opposite to the second lower surface 1822; the second lower surface 1822 and the first adapter 12 form a second gas passage, specifically, the second lower surface 1822 and the first The interval between the upper surface of an adapter 12 is the second gas passage, and the second gas passage is connected with the gas outlet end of the first gas passage.
  • the reactant gas enters the first chamber after passing through the first gas passage and the second gas passage.
  • the first extension 182 can form a good shield for the gas outlet end of the first gas passage, thereby reducing even Prevent plasma from entering the first gas passage.
  • the upper surface 1823 of the first extension portion 182 is coplanar with the upper surface of the filter portion 181. This helps to improve the uniformity of gas distribution.
  • FIG. 4A is a top view of the first extension 182 according to an embodiment of the present invention.
  • the first extension portion 182 extends from the edge of the filter portion 181 in the first direction to present a ring structure, and the ring structure surrounds the filter portion 181 in the circumferential direction.
  • the upper surface 1823 of the first extension portion 182 forms a ring structure at a top view angle
  • the extension direction of the first extension portion 182 of the ring structure is the respective first directions as shown in FIG. 4A. , That is, along the radial direction of the filter portion 181 and away from the central axis of the filter portion 181.
  • FIG. 4B is a top view of the first extension 182 according to another embodiment of the present invention.
  • the first extension portion 182 includes a plurality of, and is arranged at intervals along the circumferential direction of the filter portion 181, and each first extension portion 182 extends from the edge of the filter portion 181 in the above-mentioned first direction to form a convex structure.
  • the upper surface 1823 of each first extension 182 forms a convex structure, such as a bump shape or a claw shape, at a top view angle.
  • the extending direction of the convex structure is each of the first directions as shown in FIG. 4B, that is, the direction along the radial direction of the filter portion 181 and away from the central axis of the filter portion 181.
  • the first extension 182 can also adopt any other structure, as long as the filter device 18 can be stably installed on the first adapter 12 On top and form a good grounding.
  • the second extension portion 183 extends from a position of the filter portion 181 adjacent to the first extension portion 182 in the second direction to the inner side of the first adapter 12 to support the filter portion 181 ;
  • the second extension 183 can also be used as a lining to protect the first adapter 12 from being bombarded by plasma, thereby prolonging the service life of the first adapter 12 and avoiding plasma bombardment of the first adapter 12 The particles contaminate the work piece on the lower electrode platform 13.
  • the above-mentioned second direction is perpendicular to the first direction.
  • the second extension portion 183 extends downward along the axial direction of the filter portion 181, and as shown in FIG. 5B, the second extension portion 183 may It presents a barrel-shaped structure and surrounds the first adapter 12 in the circumferential direction.
  • FIG. 6A is a detailed structure diagram of a filter device 18 according to an embodiment of the present invention.
  • the thickness of the filter portion 181 in the axial direction at different positions is equal to the thickness W1a
  • the thickness of the first extension portion 182 in the axial direction of the filter portion 181 ie, the upper surface 1823 and the first lower surface
  • the distance between 1821 is equal to the thickness W2a, where the thickness W1a is greater than the thickness W2a.
  • this is not a limitation of the embodiment of the present invention.
  • the thickness of the filter portion 181 in the axial direction may be less than or equal to the thickness of the first extension portion 182 in the axial direction of the filter portion 181.
  • the thickness of the filter portion 181 in the axial direction at different positions is equal to the thickness W1b
  • the thickness of the first extension portion 182 in the axial direction of the filter portion 181 ie, the upper surface 1823 and the first lower surface The distance between 1821
  • the thickness W2b is equivalent to the thickness W2b.
  • the thickness of the filter portion 181 in the axial direction at different positions is equal to the thickness W1c
  • the thickness of the first extension portion 182 in the axial direction of the filter portion 181 (that is, the upper surface 1823 and the first The distance between the lower surfaces 1821) is equal to the thickness W2c, where the thickness W1c is smaller than the thickness W2c.
  • the embodiment of the present invention does not limit the relative thickness of the filter portion 181 and the first extension portion 182 in the axial direction of the filter portion 181.
  • the first extension 182 can be placed on the first adapter 12 and form a good ground to achieve the shielding function, it should belong to the scope of the present invention.
  • the thickness of the filter part 181 is the same in the axial direction at different positions.
  • the ratio of the depth and the pore diameter of the filter part 181 is between 2 and 20. Within range.
  • the depth of the through hole on the filter part 181 is 10 mm and the hole diameter is 1 mm.
  • the ratio of the depth of the through hole to the hole diameter is 10.
  • the depth of the through hole on the filter part 181 is 7 mm and the hole diameter is 0.5 mm.
  • the ratio of the depth of the through hole to the hole diameter is 14.
  • the depth of the through hole on the filter part 181 is 7 mm and the hole diameter is 1 mm.
  • the ratio of the depth of the through hole to the hole diameter is 7.
  • the above-mentioned pore sizes are all smaller than the plasma sheath, so that after the plasma in the first chamber CH1 passes through the through holes of the filter 181, it is difficult for a large number of ions in the plasma to pass. Therefore, the filter device 18 disclosed in the embodiment of the present invention can effectively filter out ions, so that free radicals, atoms, and molecules can process the work piece in the second chamber CH2, and prevent the ions from reacting with the work piece. The result of the process is not as expected.
  • FIG. 7A shows the simulation of the electric field distribution of the plasma system 1 with or without the filter device 18, where the solid line in FIG. 7A represents the electric field distribution when the plasma system 1 is not installed with the filter device 18, and the dashed line It represents the distribution of the electric field when the filter device 18 is installed in the plasma system 1. It can be clearly observed from FIG. 7A that the plasma system 1 equipped with the filter device 18 can effectively shield the angular electric field. In detail, when the filter device 18 is installed, a certain distance from the lower electrode platform 13 to above the lower electrode platform 13 can effectively completely shield the angular electric field.
  • FIG. 7B shows the simulation of ion concentration distribution in the plasma system 1 with or without the filter device 18, where the solid line in FIG. 7B represents the plasma system 1 when the filter device 18 is not installed, and the lower electrode platform 13 For the upper ion concentration distribution, the dotted line represents the ion concentration distribution above the lower electrode platform 13 when the filter device 18 is installed in the plasma system 1. It can be clearly observed from FIG. 7B that the plasma system 1 equipped with the filtering device 18 can effectively filter the ions compared to the case where the filtering device 18 is not installed.
  • FIG. 7C shows the simulation of the ion concentration distribution under the conditions of the same depth but different pore diameters of the through holes of the filter part 181.
  • the measurement is performed at a certain fixed position above the lower electrode platform 13 (such as the position of the work piece).
  • the depth of the through hole of the filter portion 181 is fixed to 10 mm, and the through hole diameters are respectively 0.5 mm, 1 mm, and 2 mm. It can be clearly observed from FIG. 7C that the smaller the aperture of the through hole, the lower the concentration of ions at the fixed position. In other words, the smaller the aperture of the through hole is, the more it can filter the ions and prevent the ions from reacting with the work piece.
  • Fig. 7D shows the simulation of the free radical concentration distribution under the conditions of the same depth but different pore diameters of the through holes of the filter part 181.
  • the measurement is performed at a certain fixed position above the lower electrode platform 13 (such as the position of the work piece).
  • the depth of the through hole of the filter part is fixed to 10 mm, and the through hole diameters are respectively 0.5 mm, 1 mm, and 2 mm. It can be clearly observed from FIG. 7D that the smaller the aperture of the through hole, the more uniform the concentration of radicals in the radial direction of the lower electrode platform 13. In other words, the smaller the aperture of the through hole, the better the uniformity of the radical concentration.
  • FIG. 7E shows a simulation of the ion concentration distribution of the through holes of the filter part 181 under the same pore size but different depth conditions.
  • the measurement is performed at a certain fixed position above the lower electrode platform 13 (such as the position of the work piece).
  • the through hole diameter is fixed at 0.5 mm, and the through hole depths are respectively 1 mm, 2 mm, 7 mm, and 10 mm. It can be clearly observed from FIG. 7E that the deeper the through hole is, the lower the concentration of ions at the fixed position. In other words, the deeper the through hole is, the more it can filter the ions and prevent the ions from reacting with the work piece.
  • FIG. 7F shows the simulation of the electric field distribution when the filter device 18 is implemented with different materials.
  • the simulation is performed for the case where the filter device 18 is realized by ceramics and aluminum, and the filter device 18 is not installed. It can be clearly observed from FIG. 7F that when the filter device 18 is implemented by ceramic material, similar to the case where the filter device 18 is not installed, the effect of shielding the angular electric field is less significant. In contrast, when the filter device 18 is implemented with aluminum material, the angular electric field can be effectively completely shielded within a certain distance from the lower electrode platform 13 to the upper side of the lower electrode platform 13.
  • the thickness of the filter portion 181 at the edge is thicker than the thickness at the center.
  • FIG. 8 is a side view of the filter portion 181 according to an embodiment of the present invention.
  • the thickness of the filter part 181 at the edge is W1d
  • the thickness of the filter part 181 at the center is W1e, wherein the thickness W1d is greater than the thickness W1e.
  • the aperture of the through hole on the filter portion 181 is 0.5 mm
  • the depth of the through hole gradually changes from 15 mm at the edge to 6 mm at the center.
  • the ratio of the depth of the through hole on the filter part 181 to the pore size is in the range of 12-30.
  • the aperture of the through hole on the filter part 181 is 1 mm, and the depth of the through hole gradually changes from 18 mm at the edge to 8.5 mm at the center.
  • the ratio of the depth of the through hole on the filter part 181 to the pore diameter is in the range of 8.5-18.
  • FIGS. 9A to 9C The axial position shown in FIGS. 9A to 9C is the position upward from the lower electrode platform 13, and the radial position is the position from the central axis of the lower electrode platform 13 outward to the edge.
  • FIG. 9A shows the simulation of the electric field distribution under the condition that the aperture of the filter part 181 is 0.5 mm and 1 mm, and the thickness is gradually changed.
  • the measurement is performed at a certain fixed position above the lower electrode platform 13 (such as the position of the work piece). It can be clearly observed from FIG. 9A that through the improved design of gradual thickness, the aperture of the filter 181 of 0.5 mm or 1 mm can effectively shield the angular electric field.
  • FIG. 9B shows the simulation of ion concentration distribution under the condition that the through hole diameter of the filter part 181 is 0.5 mm and 1 mm, and the thickness is fixed or the thickness is gradually changed.
  • the measurement is performed at a certain fixed position above the lower electrode platform 13 (such as the position of the work piece).
  • FIG. 9C shows a simulation diagram of the concentration distribution of free radicals under the condition that the through hole diameter of the filter portion 181 is 0.5 mm and 1 mm, and the thickness is fixed or the thickness is gradually changed.
  • the measurement is performed at a certain fixed position above the lower electrode platform 13 (such as the position of the work piece). It can be clearly observed from FIG.
  • the improved design of gradual thickness can more effectively improve the uniformity of the concentration of free radicals in the radial direction of the lower electrode platform 13; similarly, When the aperture of the filter part 181 is 1 mm, the thickness uniformity of the concentration of free radicals in the radial direction of the lower electrode platform 13 can be more effectively improved through the improved design of gradual thickness.
  • the filter device 18 disclosed in the present invention has a good shielding effect on the radio frequency electric field, so that the vacuum chamber is divided into a plasma generation area and a plasma diffusion area.
  • the filter device 18 made of aluminum material can almost completely shield the diagonal electric field to prevent the igniting phenomenon under the filter device 18 (that is, the second chamber CH2); in addition, by changing the communication on the filter part 181
  • the ratio of the hole depth to the through hole diameter and the improved design of changing the thickness of the filter 181 from thicker edges to thinner centers can reduce the concentration of ions above the lower electrode platform 13 and improve the free radicals on the lower electrode platform 13 Uniformity in the radial direction.
  • the plasma system 1 disclosed in the embodiment of the present invention does not have a lower radio frequency source and a matching circuit, because the filter device 18 disclosed in the present invention can effectively reduce ions in the lower electrode.
  • the filter device 18 disclosed in the present invention can effectively reduce ions in the lower electrode.
  • free radicals can reach the work piece on the lower electrode platform 13 through diffusion. In this way, compared with the traditional plasma system, the plasma system 1 can reduce power consumption more effectively.
  • FIG. 10 is a side view of the plasma system 2 according to an embodiment of the present invention.
  • the plasma system 2 uses plasma to process the work piece.
  • the plasma system 2 can be a pre-cleaning device for oxidizing the oxide impurities in the grooves or holes of the work piece. Its removal.
  • the plasma system 2 includes a dielectric window 21, a first adapter 22, a lower electrode platform 23, a radio frequency source 24, a matching circuit 25, an induction coil 26, a metal barrel 27, a filter device 28 and a top cover 29.
  • the plasma system 2 is roughly similar to the plasma system 1 except for the dielectric window 21 and the top cover 29 of the plasma system 2.
  • the dielectric window 21 has a barrel-shaped structure and is disposed on the first adapter 22.
  • the dielectric window 21 may include an insulating material.
  • the dielectric window 21 may be composed of materials such as quartz or ceramics.
  • the top cover 29 is disposed above the dielectric window 21.
  • the top cover 29 includes a conductive material.
  • the top cover 29 may be composed of aluminum.
  • FIG. 11 is a side view of the plasma system 3 according to an embodiment of the present invention.
  • the plasma system 3 uses plasma to process the work piece.
  • the plasma system 3 may be a pre-cleaning device for reducing the oxide impurities in the grooves or holes on the work piece. To remove it.
  • the plasma system 3 includes a dielectric window 31, a first adapter 32, a lower electrode platform 33, a radio frequency source 34, a matching circuit 35, an induction coil 36, a metal barrel 37, a filter device 38, a top cover 39, and a second adapter Pieces 40 and shielding piece 41.
  • the plasma system 3 is roughly similar to the plasma system 2 except that the plasma system 3 additionally includes a second adapter 40 and a shield 41. The structure, shape and function of the second adapter 40 and the shield 41 are described in detail as follows.
  • FIG. 12 is a side view of the second adapter 40 and the shield 41 according to an embodiment of the present invention.
  • the second adapter 40 has a ring-shaped bottom 401 and a ring-shaped top 402.
  • the ring-shaped bottom 401 has a ring-shaped structure at a top view angle.
  • the ring-shaped bottom 401 is disposed on the dielectric window 31 and is opposite to the inner peripheral wall of the ring-shaped top 402. Bulge.
  • the upper surface of the ring-shaped top 402 is attached to the lower surface of the top cover 39. In other words, the top cover 39 is disposed on the second adapter 40.
  • the shield 41 includes a ring-shaped body 412 and a ring-shaped extension portion 411, wherein the ring-shaped body 412 surrounds the inside of the dielectric window 31 along the circumferential direction of the dielectric window 31; the ring-shaped extension portion 411 presents a ring structure at a top view angle, and the ring-shaped extension portion 411 Extends from the annular main body 412 and is placed on the annular bottom 401.
  • the annular extension 411 extends from the outer peripheral wall of the annular main body 412 in the radial direction thereof, and the protruding part is superimposed on the annular bottom 401 from the annular top 402 Above the protruding part of the inner peripheral wall, so as to realize the fixation of the shield 41.
  • the inner surface of the shield 41 can be subjected to surface roughening treatments such as sandblasting, thermal spraying, etc., and has a function similar to an inner lining to reduce the falling of particles.
  • the barrel surface of the barrel structure formed by the shield 41 is provided with multiple slits, the slit length is greater than 70% of the barrel structure height, and the slit width is greater than 0.5 mm to avoid plasma in the first chamber CH1 Eddy current loss occurs on the barrel structure.
  • the filter device disclosed in the embodiments of the present invention can have a good shielding effect on the radio frequency electric field, so that the vacuum chamber is divided into a plasma generation zone and a plasma diffusion zone, and is made of aluminum
  • the fabricated filter device can almost completely shield the diagonal electric field, which can prevent the shining phenomenon under the filter device; in addition, by changing the ratio of the depth of the through hole on the filter part to the hole diameter and the thickness of the filter part from the edge
  • the improved design with a thicker gradient to a thinner center can reduce the concentration of ions above the lower electrode platform and improve the uniformity of free radicals in the radial direction of the lower electrode platform.

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Abstract

本实施例提供一种等离子体系统以及过滤装置，该系统中，介电窗所环绕的区域被设置为第一腔室，用于容置等离子体；第一适配件设置于介电窗的下方，第一适配件所环绕的区域被设置为第二腔室；下部电极平台置于第二腔室之中，用于承载工作件；过滤装置的过滤部置于第一腔室与第二腔室的交界处，且具有复数个通孔，用以在第一腔室内的等离子体经各个通孔进入第二腔室的过程中，对经过的等离子体中的离子进行滤除；第一延伸部自过滤部于第一方向延伸，且放置于第一适配件之上；第二延伸部自过滤部的邻近第一延伸部的位置处于第二方向延伸至第一适配件的内侧，用以支撑过滤部。本实施例提供的等离子体系统以及过滤装置，可以避免离子对工作件上的材料产生负面影响。

Description

等离子体系统以及过滤装置 技术领域
本发明实施例涉及半导体制造技术领域，详细来说，尤其涉及一种等离子体系统以及应用于该等离子体系统的过滤装置。
背景技术
传统上在对工作件(如晶圆)进行诸如沉积等的工艺之前，会先对工作件进行预清洗处理，以去除工作件上的杂质。该预清洗处理的具体过程为：将由诸如氩气、氦气、氢气等的工艺气体电离形成等离子体，该等离子体中的自由基会与工作件上的氧化物杂质发生还原反应，以实现杂质的去除。
但是，在进行上述预清洗的过程中，上述等离子体中的离子可能会对工作件上的材料产生负面影响，例如对于低介电系数材料，等离子体中若含有氢离子，其会进入低介电系数材料，导致低介电系数材料劣化，从而造成工艺结果不如预期。
发明内容
本发明实施例旨在至少解决现有技术中存在的技术问题之一，公开了一种等离子体系统以及过滤装置，其可以避免等离子体中的离子对工作件上的材料产生负面影响，从而可以提高产品性能。
依据本发明一实施例，公开一种等离子体系统，所述等离子体系统包括:介电窗、第一适配件、下部电极平台以及过滤装置。所述介电窗所环绕的区域被设置为第一腔室，所述第一腔室用于容置等离子体。所述第一适配件设置于所述介电窗的下方，所述第一适配件所环绕的区域被设置为第二腔室。所述下部电极平台置于所述第二腔室之中，所述下部电极平台用于承载工作 件。所述过滤装置包括过滤部、第一延伸部和第二延伸部，其中，所述过滤部置于所述第一腔室与所述第二腔室的交界处，且所述过滤部具有复数个通孔，用以在所述第一腔室内的所述等离子体经各个所述通孔进入所述第二腔室的过程中，对所述等离子体中的离子进行滤除；所述第一延伸部自所述过滤部于第一方向延伸，且放置于所述第一适配件之上；所述第二延伸部自所述过滤部的邻近所述第一延伸部的位置处于第二方向延伸至所述第一适配件的内侧，用以支撑所述过滤部；所述第二方向垂直于所述第一方向。
通过本实施例所公开的等离子体系统，其借助过滤装置的过滤部，在第一腔室内的等离子体经该过滤部中各个通孔进入第二腔室的过程中，可以有效地对经过的等离子体中的离子进行滤除，避免离子进入低介电系数材料，进而造成低介电系数材料的劣化。另外，借助上述过滤装置的第一延伸部放置于第一适配件上，即可实现过滤装置的安装和定位，以及借助第二延伸部延伸至第一适配件的内侧，既可以支撑过滤部，又可以保护第一适配件不被等离子体轰击；同时，由于上述过滤装置是由过滤部、第一延伸部和第二延伸部一体成型而成，三者之间并无组装的缝隙，如此结构下，一体成型的过滤装置可避免等离子体轰击元件组装处的缝隙，从而可以大幅降低过滤装置的更换频率，进而降低成本。
依据本发明一实施例，公开一种应用于等离子体系统的过滤装置。所述等离子体系统包括介电窗以及设置于所述介电窗下方的适配件，所述介电窗所环绕的区域被设置为第一腔室，所述第一腔室用于容置等离子体，所述适配件所环绕的区域被设置为第二腔室，所述等离子体系统还包括置于所述第二腔室之中的下部电极平台，所述下部电极平台用于承载工作件，其特征在于，所述过滤装置包括过滤部、第一延伸部和第二延伸部，其中，所述过滤部置于所述第一腔室与所述第二腔室的交界处，且所述过滤部具有复数个通孔，用以在所述第一腔室内的所述等离子体经各个所述通孔进入所述第二腔 室的过程中，对所述等离子体中的离子进行滤除；所述第一延伸部自所述过滤部于第一方向延伸，且放置于所述第一适配件之上；所述第二延伸部自所述过滤部的邻近所述第一延伸部的位置处于所述第二方向延伸至所述第一适配件的内侧，用以支撑所述过滤部；所述第二方向垂直于所述第一方向。
等离子体系统通过本实施例所公开的过滤装置，可以有效地对经过的等离子体中的离子进行滤除，避免离子进入低介电系数材料，进而造成低介电系数材料的劣化。另外，借助上述过滤装置的第一延伸部放置于第一适配件上，即可实现过滤装置的安装和定位，以及借助第二延伸部延伸至第一适配件的内侧，既可以支撑过滤部，又可以保护第一适配件不被等离子体轰击；同时，由于上述过滤装置是由过滤部、第一延伸部和第二延伸部一体成型而成，三者之间并无组装的缝隙，如此结构下，一体成型的过滤装置可避免等离子体轰击元件组装处的缝隙，从而可以大幅降低过滤装置的更换频率，进而降低成本。
附图说明
图1是依据本发明一实施例的等离子体系统的示意图。
图2是依据本发明一实施例的过滤装置的示意图。
图3A至3B是依据本发明一实施例的过滤装置的第一延伸部的细部结构图。
图4A至4B是依据本发明一实施例的过滤装置的第一延伸部的顶视图。
图5A至5B是依据本发明一实施例的过滤装置的第二延伸部的侧视图。
图6A至6C是依据本发明一实施例的过滤装置的过滤部与第一延伸部的厚度示意图。
图7A至7F是依据本发明一实施例的仿真结果图。
图8是依据本发明一实施例的过滤部的侧视图。
图9A至9C是依据本发明一实施例的仿真结果图。
图10是依据本发明另一实施例的等离子体系统的侧视图。
图11是依据本发明又另一实施例的等离子体系统的侧视图。
图12是依据本发明一实施例的适配件及屏蔽件的侧视图。
具体实施方式
以下揭示内容提供了多种实施方式或例示，其能用以实现本揭示内容的不同特征。下文所述之组件与配置的具体例子系用以简化本揭示内容。当可想见，这些叙述仅为例示，其本意并非用于限制本揭示内容。举例来说，在下文的描述中，将一第一特征形成于一第二特征上或之上，可能包括某些实施例其中所述的第一与第二特征彼此直接接触；且也可能包括某些实施例其中还有额外的组件形成于上述第一与第二特征之间，而使得第一与第二特征可能没有直接接触。此外，本揭示内容可能会在多个实施例中重复使用组件符号和/或标号。此种重复使用乃是基于简洁与清楚的目的，且其本身不代表所讨论的不同实施例和/或组态之间的关系。
再者，在此处使用空间上相对的词汇，譬如「之下」、「下方」、「低于」、「之上」、「上方」及与其相似者，可能是为了方便说明图中所绘示的一组件或特征相对于另一或多个组件或特征之间的关系。这些空间上相对的词汇其本意除了图中所绘示的方位之外，还涵盖了装置在使用或操作中所处的多种不同方位。可能将所述设备放置于其他方位(如，旋转90度或处于其他方位)，而这些空间上相对的描述词汇就应该做相应的解释。
虽然用以界定本申请较广范围的数值范围与参数皆是约略的数值，此处已尽可能精确地呈现具体实施例中的相关数值。然而，任何数值本质上不可避免地含有因个别测试方法所致的标准偏差。在此处，「约」通常系指实际数值在一特定数值或范围的正负10％、5％、1％或0.5％之内。或者是，「约」 一词代表实际数值落在平均值的可接受标准误差之内，视本申请所属技术领域中具有通常知识者的考虑而定。当可理解，除了实验例之外，或除非另有明确的说明，此处所用的所有范围、数量、数值与百分比(例如用以描述材料用量、时间长短、温度、操作条件、数量比例及其他相似者)均经过「约」的修饰。因此，除非另有相反的说明，本说明书与附随申请专利范围所揭示的数值参数皆为约略的数值，且可视需求而更动。至少应将这些数值参数理解为所指出的有效位数与套用一般进位法所得到的数值。在此处，将数值范围表示成由一端点至另一端点或介于二端点之间；除非另有说明，此处所述的数值范围皆包括端点。
在对工作件(如晶圆)进行加工时，特别是对工作件进行硅穿孔、封装等工艺时，需要一种预清洗腔室，该预清洗腔室的作用是将待处理工作件表面的杂质去除，以利于后续的物理气相沉积工艺的有效进行。一般的预清洗腔室，是将气体，如氩气、氦气、氢气等，激发为等离子体，利用等离子体对杂质进行物理轰击以及与其发生化学反应，来实现对工作件去杂质的处理。对于一些氧化物杂质，需要利用等离子体与工作件上的沟槽或孔洞内的氧化物杂质进行还原反应以将其去除，以免影响下一步金属沉积工艺的性能。但因为某些离子(如氢离子)容易进入低介电系数材料中，并使低介电系数材料劣化，造成工艺结果不如预期，因此需避免诸如氢离子等参与反应。本实施例公开一种等离子系统以及应用于所述等离子体系统的过滤装置，可以有效的减少离子(如氢离子)与低介电系数材料反应，来避免上述情况发生。
图1是依据本发明一实施例所示的等离子体系统1的示意图。该等离子体系统1可以是一种预清洗装置，用于对工作件(如晶圆)上的沟槽或孔洞内的诸如氧化物等杂质反应并将其去除。等离子体系统1包括介电窗11、第一适配件12、下部电极平台13、射频源14、匹配电路15、感应线圈16、金属桶17以及过滤装置18。介电窗11所环绕的区域被设置为第一腔室CH1。 在本实施例中，介电窗11呈现半球状，然而，此并非本发明实施例的一限制，在其他实施例中，介电窗11可以呈现不同的形状，关于介电窗11的其他变化将于后续的段落中说明。第一适配件12设置于介电窗11的下方并接地，其中第一适配件12所环绕的区域被设置为第二腔室CH2。在本实施例中，等离子体系统1通过侧向进气方式将反应气体(如氦气、氩气、氢气等)充入第一腔室CH1中，例如，在第一适配件12中设置有第一气体通路，用以将反应气体输送至第一腔室CH1中。
下部电极平台13置于第二腔室CH2中，用于承载工作件。在某些实施例中，下部电极平台13可以为静电卡盘，并可采用多区加热的方式对工作件的不同位置的温度进行独立调节，以提升工作件的温度均匀性。
射频源14通过匹配电路15向感应线圈16加载射频功率。匹配电路15用于调节匹配射频源14后方的阻抗，使得所加载的射频功率实现最大的耦合效率。感应线圈16呈现桶状，且环绕在介电窗11的周围，例如为柱状立体式螺旋线圈。在某些实施例中，为了实现更好的电磁场分布均匀性和对称性，感应线圈16为柱状立体式螺旋线圈，且具有2匝以上的线圈，并且每匝线圈由3/4圆周的水平段和1/4圆周的螺旋升高段组成，其中，螺旋升高段的较高的一端串接至相邻且更高的一匝线圈的水平段的一端。感应线圈16用于将射频功率耦合至第一腔室CH1内，并将该第一腔室CH1内的反应气体电离耦合成等离子体。金属桶17设置于第一适配件12之上，且包围感应线圈16，并且金属桶17通过与第一适配件12相接触来实现接地，并借以进行电磁屏蔽。
过滤装置18为一体成型结构，过滤装置18包括导电材料，也即过滤装置18由导电材料制成。在某些实施例中，过滤装置18可由铝制成。以一体成型结构实现的过滤装置18，可以避免等离子体轰击元件组装处的缝隙，大幅降低过滤装置18的更换频率，进而降低成本。同时参考图1与图2，过滤 装置18包括过滤部181、第一延伸部182以及第二延伸部183。其中，过滤部181置于第一腔室CH1与第二腔室CH2的交界处，以将第一腔室CH1与第二腔室CH2隔离，并且过滤部181具有复数个通孔，该通孔的两端分别与第一腔室CH1和第二腔室CH2相连通，以使第一腔室CH1中的等离子体能够经由各个通孔进入第二腔室CH2；同时，过滤部181用于对经过各个通孔的等离子体中的离子进行滤除，详细来说，过滤部181的复数个通孔过滤等离子体中的离子(如氩离子、氦离子、氢离子等)，避免离子进入第二腔室CH2后与下部电极平台13上的工作件反应，使得工作件劣化，进而造成后续加工的工艺结果不如预期。
在某些实施例中，过滤部181上的复数个通孔的排布密度在0.7个通孔/平方厘米至3个通孔/平方厘米的范围内。通孔的排布密度可按照工艺效率的快慢进行改变。详细来说，在工艺速率要求较高时，可以适当增加通孔的排布密度，反之则减少。
图3A至图3B是依据本发明一实施例之第一延伸部182的细部结构图。如图3A所示，第一延伸部182自过滤部181于第一方向延伸，且放置于第一适配件12之上，以能够通过与第一适配件12相接触来形成良好接地。例如，第一延伸部182自过滤部181的周向侧面沿如图3A和图3B示出的第一方向延伸，且伸出的部分叠置在第一适配件12的上端面，以实现可导电接触。
此外，正如图3A所示，第一适配件12中设置有第一气体通路，该第一气体通路与外部的反应气体源(图中未示出)连接，并且该第一气体通路的出气端位于第一适配件12的上表面，且位于第一延伸部182与介电窗11之间的位置处，以能够与第一腔室CH1的内部相连通。反应气体(如氦气、氩气、氢气等)经过该气体通路可直接进入第一腔室CH1中。进入第一腔室CH1中的反应气体经电离形成等离子体，第一腔室CH1中的等离子体能够经由各个通孔进入第二腔室CH2；同时，过滤部181对经过各个通孔的等离 子体中的离子进行滤除，避免离子进入第二腔室CH2后与工作件反应，使得工作件劣化，进而造成后续加工的工艺结果不如预期。然而，上述进气方式并非本实施例的一限制。
参考图3B，其示出的第一延伸部182与图3A中的第一延伸部的结构不同，除此之外，其他结构相同，在此不再赘述。图3B中，第一延伸部182的一部分贴合第一适配件12的上表面，其余部分间隔地设置在第一适配件12的上方。详细来说，第一延伸部182具有阶梯状结构，例如包括第一下表面1821和第二下表面1822，其中，第一下表面1821设置在第一适配件12之上，且与第一适配件12的上表面相贴合，以形成良好接地，第二下表面1822位于第一下表面1821的远离过滤部181的一侧，并且该第二下表面1822于过滤部181的轴向上的位置高于第一下表面1821于过滤部181的轴向上的位置，使得第二下表面1822与第一适配件12的上表面之间间隔形成可供反应气体通过的第二气体通路。具体地，如图3B所示，第一适配件12中设置有前述中第一气体通路，该第一气体通路与外部的反应气体源(图未示)连接，并且该第一气体通路的出气端位于第一适配件12的上表面，且与第二下表面1822相对；第二下表面1822与第一适配件12形成第二气体通路，具体地，第二下表面1822与第一适配件12的上表面之间的间隔即为该第二气体通路，且第二气体通路与第一气体通路的出气端相连通。如此设置下，反应气体经过第一气体通路及第二气体通路后进入所述第一腔室，同时，第一延伸部182可以对第一气体通路的出气端形成良好的遮挡，从而可以减少甚至避免等离子体进入该第一气体通路中。
在一些实施例中，第一延伸部182的上表面1823与过滤部181的上表面共平面。这样有利于提高气体分布均匀性。
第一延伸部182的结构可以有多种，例如，图4A是依据本发明一实施例之第一延伸部182的顶视图。如图4A所示，第一延伸部182自过滤部181 的边缘于上述第一方向延伸呈现环状结构，该环状结构沿过滤部181的圆周方向环绕。在这种情况下，第一延伸部182的上表面1823在顶视角度形成环状结构，该环状结构的第一延伸部182的延伸方向即为如图4A中示出的各个第一方向，即，沿过滤部181的径向且远离过滤部181中心轴的方向。
又如，图4B是依据本发明另一实施例之第一延伸部182的顶视图。参考图4B，第一延伸部182包括多个，且沿过滤部181的圆周方向间隔设置，并且每个第一延伸部182自过滤部181的边缘于上述第一方向延伸形成凸状结构，在这种情况下，每个第一延伸部182的上表面1823在顶视角度形成凸状结构，例如凸块状或者爪状等等。该凸状结构的延伸方向即为如图4B中示出的各个第一方向，即，沿过滤部181的径向且远离过滤部181中心轴的方向。
本领域具有通常知识者在阅读完图4A至4B的实施例后应能轻易理解，第一延伸部182还可以采用其他任意结构，只要能够使过滤装置18平稳的设置在第一适配件12之上并形成良好接地即可。
参考图5A，并结合图1所示，第二延伸部183自过滤部181的邻近第一延伸部182的位置处于第二方向延伸至第一适配件12的内侧，用以支撑过滤部181；同时，第二延伸部183还可以作为内衬保护第一适配件12不被等离子体轰击，从而可以延长第一适配件12的使用寿命，避免等离子体轰击第一适配件12产生颗粒污染下部电极平台13上的工作件。具体地，上述第二方向垂直于第一方向，例如，如图5A所示，第二延伸部183沿过滤部181的轴向向下延伸，并且如图5B所示，第二延伸部183可以呈现桶状结构，且沿第一适配件12的圆周方向环绕。
在某些实施例中，过滤部181的不同位置在其轴向上的厚度一致。图6A至图6C以图3B中所示的结构作为范例说明。图6A是依据本发明一实施例之过滤装置18的细部结构图。如图6A所示，过滤部181的不同位置在其轴 向上的厚度均等于厚度W1a，第一延伸部182在过滤部181的轴向上的厚度(即，上表面1823与第一下表面1821之间的间距)等于厚度W2a，其中，厚度W1a大于厚度W2a。然而，此并非本发明实施例的一限制，在某些实施例中，过滤部181在其轴向上的厚度可小于或等于第一延伸部182在过滤部181的轴向上的厚度。如图6B所示，过滤部181的不同位置在其轴向上的厚度均等于厚度W1b，第一延伸部182在过滤部181的轴向上的厚度(即，上表面1823与第一下表面1821之间的间距)等于厚度W2b，其中，厚度W1b等同于厚度W2b。另外，如图6C所示，过滤部181的不同位置在其轴向上的厚度均等于厚度W1c，第一延伸部182在过滤部181的轴向上的厚度(即，上表面1823与第一下表面1821之间的间距)等于厚度W2c，其中厚度W1c小于厚度W2c。
本技术领域具有通常知识者在阅读完图6A至6C的实施例后应能轻易理解，本发明实施例不限制过滤部181与第一延伸部182在过滤部181的轴向上的厚度的相对关系，只要第一延伸部182能放置于第一适配件12之上并形成良好接地来实现屏蔽功能皆应隶属于本发明的范畴。
如上所述，在某些实施例中，过滤部181的不同位置在其轴向上的厚度一致，在这种设计下，过滤部181上的通孔的深度以及孔径的比值位于2到20的范围内。优选地，过滤部181上的通孔的深度为10毫米且孔径为1毫米，换言之，通孔的深度以及孔径的比值为10。优选地，过滤部181上的通孔的深度为7毫米且孔径为0.5毫米，换言之，通孔的深度以及孔径的比值为14。优选地，过滤部181上的通孔的深度为7毫米且孔径为1毫米，换言之，通孔的深度以及孔径的比值为7。上述的孔径尺寸皆小于等离子体鞘层，使得第一腔室CH1的等离子体在通过过滤部181的各个通孔后，等离子体中的大量离子难以通过。因此，通过本发明实施例所公开的过滤装置18可以有效地将离子过滤掉，使得自由基和原子、分子可以在第二腔室CH2中对工作 件进行加工，避免离子与工作件反应，造成工艺结果不如预期。
申请人针对过滤装置18的各种条件进行仿真，藉此得到最能有效过滤离子的装置规格。需注意的是，在图7A至7F中所示的轴向位置为自下部电极平台13向上的位置，径向位置为自下部电极平台13的中心轴向外至边缘的位置。图7A显示等离子体系统1在有无过滤装置18的条件下，针对电场分布所做的仿真，其中图7A中的实线代表等离子体系统1未安装过滤装置18时，电场分布的情况，虚线代表等离子体系统1安装过滤装置18时，电场分布的情况。从图7A可清楚观察，有安装过滤装置18的等离子体系统1可以有效的将角向电场屏蔽。详细来说，有安装过滤装置18时，自下部电极平台13至下部电极平台13上方的一定距离内可以有效地将角向电场完全屏蔽。
图7B显示等离子体系统1在有无过滤装置18的条件下，针对离子浓度分布所做的仿真，其中图7B中的实线代表等离子体系统1未安装过滤装置18时，在下部电极平台13上方的离子浓度分布的情况，虚线代表等离子体系统1安装过滤装置18时，在下部电极平台13上方的离子浓度分布的情况。从图7B可清楚观察，相较于未安装过滤装置18的情况，有安装过滤装置18的等离子体系统1可以有效的将离子过滤。
图7C显示过滤部181的通孔在深度相同但孔径不同的条件下，针对离子浓度分布所做的仿真。详细来说，图7C所示的仿真中，是在下部电极平台13上方的某一固定位置(如工作件所在位置)进行量测。另外，图7C所示的仿真中，将过滤部181的通孔深度固定为10毫米，分别对通孔孔径为0.5毫米、1毫米及2毫米进行仿真。从图7C可清楚观察，通孔孔径越小，离子在该固定位置的浓度越低。换言之，通孔孔径越小，越能将离子过滤，避免离子与工作件反应。
图7D显示过滤部181的通孔在深度相同但孔径不同的条件下，针对自 由基浓度分布所做的仿真。详细来说，图7D所示的仿真中，是在下部电极平台13上方的某一固定位置(如工作件所在位置)进行量测。另外，图7D所示的仿真中，将过滤部的通孔深度固定为10毫米，分别对通孔孔径为0.5毫米、1毫米及2毫米进行仿真。从图7D可清楚观察，通孔孔径越小，自由基在下部电极平台13的径向方向的浓度越趋一致。换言之，通孔孔径越小，自由基浓度的均匀性越好。
图7E显示过滤部181的通孔在孔径相同但深度不同的条件下，针对离子浓度分布所做的仿真。详细来说，图7E所示的仿真中，是在下部电极平台13上方的某一固定位置(如工作件所在位置)进行量测。另外，图7E所示的仿真中，将通孔孔径固定为0.5毫米，分别对通孔深度为1毫米、2毫米、7毫米及10毫米进行仿真。从图7E可清楚观察，通孔深度越深，离子在该固定位置的浓度越低。换言之，通孔深度越深，越能将离子过滤，避免离子与工作件反应。
图7F显示过滤装置18以不同材质实现时，针对电场分布所做的仿真。详细来说，图7F所示的仿真中，分别针对以陶瓷、铝来实现过滤装置18以及未安装过滤装置18的情况下进行仿真。从图7F可清楚观察，以陶瓷材质来实现过滤装置18时，与未安装过滤装置18的情况类似，对于屏蔽角向电场的效果较不显著。相对地，以铝材质来实现过滤装置18时，自下部电极平台13至下部电极平台13的上方一定距离内能有效地将角向电场完全屏蔽。
在某些实施例中，过滤部181在边缘的厚度较在中心的厚度厚。参考图8，图8是依据本发明一实施例之过滤部181的侧视图。过滤部181在边缘的厚度为W1d，过滤部181在中心的厚度为W1e，其中厚度W1d大于厚度W1e。优选地，过滤部181上的通孔的孔径为0.5毫米，通孔的深度由边缘的15毫米渐变至中心的6毫米。换言之，过滤部181上的通孔的深度和孔径的比值位于12至30的范围内。优选地，过滤部181上的通孔的孔径为1毫米，通 孔的深度由边缘的18毫米渐变至中心的8.5毫米。换言之，过滤部181上的通孔的深度和孔径的比值位于8.5至18的范围内。
申请人针对过滤装置18的各种条件进行仿真，藉此得到最能有效过滤离子的装置规格。在图9A至9C中所示的轴向位置为自下部电极平台13向上的位置，径向位置为自下部电极平台13的中心轴向外至边缘的位置。图9A显示在过滤部181的孔径分别为0.5毫米及1毫米且厚度渐变的条件下，针对电场分布所做的仿真。详细来说，图9A所示的仿真中，是在下部电极平台13上方的某一固定位置(如工作件所在位置)进行量测。从图9A可清楚观察，通过厚度渐变的改良设计，过滤部181的孔径为0.5毫米或1毫米皆能有效地将角向电场完全屏蔽。
图9B显示过滤部181的通孔孔径分别为0.5毫米及1毫米且厚度固定或厚度渐变的条件下，针对离子浓度分布所做的仿真。详细来说，图9B所示的仿真中，是在下部电极平台13上方的某一固定位置(如工作件所在位置)进行量测。从图9B可清楚观察，当过滤部181的孔径为0.5毫米时，通过厚度渐变的改良设计，可以更有效地过滤离子，避免离子与工作件反应；同样地，当过滤部181的孔径为1毫米时，通过厚度渐变的改良设计，可以更有效地过滤离子，避免离子与工作件反应。
图9C显示过滤部181的通孔孔径分别为0.5毫米及1毫米且厚度固定或厚度渐变的条件下，针对自由基浓度分布所做的仿真图。详细来说，图9C所示的仿真中，是在下部电极平台13上方的某一固定位置(如工作件所在位置)进行量测。从图9C可清楚观察，当过滤部181的孔径为0.5毫米时，通过厚度渐变的改良设计，可以更有效地改善自由基在下部电极平台13的径向方向上的浓度均匀性；同样地，当过滤部181的孔径为1毫米时，通过厚度渐变的改良设计，可以更有效地改善自由基在下部电极平台13的径向方向上的浓度均匀性。
依据图7A至7F以及图9A至9C的实施例，可以清楚观察本发明所公开的过滤装置18对射频电场具有很好的屏蔽作用，使真空腔室分为等离子体产生区和等离子体扩散区，并且，以铝材质所制造的过滤装置18对角向电场几乎可以完全屏蔽，防止过滤装置18下方(即第二腔室CH2)内的起辉现象；另外，通过改变过滤部181上的通孔深度与通孔孔径的比值以及将过滤部181的厚度由边缘较厚渐变到中心较薄的改良设计，可以降低离子在下部电极平台13上方的浓度，并且改善自由基在下部电极平台13的径向方向上的均匀性。
需注意的是，相较于传统等离子体系统，本发明实施例所公开的等离子体系统1不具有下部射频源及匹配电路，由于本发明所公开的过滤装置18能有效地降低离子在下部电极平台13上方的浓度，在不具备下部射频源及匹配电路的情况下，自由基能通过扩散的方式到达下部电极平台13上的工作件。如此一来，相较于传统等离子体系统，等离子体系统1能更有效地降低功率耗损。
等离子体系统1中的介电窗11为半球状，然而，此并非本发明实施例的一限制。图10是依据本发明一实施例之等离子体系统2的侧视图。等离子体系统2通过等离子体来对工作件进行加工，举例来说，等离子体系统2可以是一种预清洗装置，用于对工作件的沟槽或孔洞内的氧化物的杂质发生氧化反应将其去除。等离子体系统2包括介电窗21、第一适配件22、下部电极平台23、射频源24、匹配电路25、感应线圈26、金属桶27、过滤装置28以及顶盖29。等离子系统2与等离子系统1大致相似，差异仅在于等离子系统2的介电窗21以及顶盖29。详细来说，不同于介电窗11呈现半球状，介电窗21为桶状结构，设置于第一适配件22之上。在本实施例中，介电窗21可以包括绝缘材料。举例来说，介电窗21可以由石英或陶瓷等材料所组成。顶盖29设置于介电窗21上方。在本实施例中，顶盖29包括导电材料。举例 来说，顶盖29可以由铝所组成。本技术领域具有通常知识者在阅读完图1至图9C的实施例后，应能轻易理解等离子系统2中其他组件的功能与目的，详细说明在此省略以省篇幅。
图11是依据本发明一实施例之等离子体系统3的侧视图。等离子体系统3通过等离子体来对工作件进行加工，举例来说，等离子体系统3可以是一种预清洗装置，用于对工作件上的沟槽或孔洞内的氧化物的杂质进行还原反应以将其去除。等离子体系统3包括介电窗31、第一适配件32、下部电极平台33、射频源34、匹配电路35、感应线圈36、金属桶37、过滤装置38、顶盖39、第二适配件40以及屏蔽件41。等离子系统3与等离子系统2大致相似，差异仅在于等离子系统3另外包括第二适配件40以及屏蔽件41，关于第二适配件40以及屏蔽件41的结构形状以及功能的详细说明如下。
参考图12，图12是依据本发明一实施例的第二适配件40及屏蔽件41的侧视图。第二适配件40具有环形底部401及环形顶部402，其中，环形底部401于顶视角度呈现环形结构，该环形底部401设置于介电窗31之上，且相对于环形顶部402的内周壁凸出。环形顶部402的上表面与顶盖39的下表面相贴合，换言之，顶盖39设置于第二适配件40之上。
屏蔽件41包括环形主体412和环形延伸部411，其中，环形主体412沿介质窗31的圆周方向环绕在介质窗31的内侧；环形延伸部411于顶视角度呈现环形结构，该环形延伸部411自环形主体412延伸，并放置于环形底部401之上，具体地，环形延伸部411自环形主体412的外周壁沿其径向延伸，且伸出的部分叠置在环形底部401自环形顶部402的内周壁凸出的部分之上，从而实现屏蔽件41的固定。通过将环形主体412沿介质窗31的圆周方向环绕在介质窗31的内侧，其所呈现的桶状结构可形成良好接地并形成法拉第屏蔽桶，藉此可以减少介电窗31的定期维护更换。另外，屏蔽件41的内表面可以做喷砂、熔射等表面粗糙化处理，具有类似内衬的功能，以减少颗粒的 掉落。另外，屏蔽件41所形成的桶状结构的桶面上开有多条缝，缝隙长度大于所述桶状结构高度的70％，缝隙宽度大于0.5毫米，避免第一腔室CH1内的等离子体在桶状结构上产生涡流损耗。
简单归纳本发明实施例，通过本发明实施例所公开的过滤装置，可以对射频电场具有很好的屏蔽作用，使真空腔室分为等离子体产生区和等离子体扩散区，并且，以铝材质所制造的过滤装置对角向电场几乎可以完全屏蔽，可以防止过滤装置下方的起辉现象；另外，通过改变过滤部上的通孔深度与通孔孔径的比值以及将过滤部的厚度由边缘较厚渐变到中心较薄的改良设计，可以降低离子在下部电极平台上方的浓度，并且改善自由基在下部电极平台的径向方向上的均匀性。

Claims (22)

  1. 一种等离子体系统，其特征在于，包括:
    介电窗，所述介电窗所环绕的区域被设置为第一腔室，所述第一腔室用于容置等离子体；
    第一适配件，设置于所述介电窗的下方，所述第一适配件所环绕的区域被设置为第二腔室；
    下部电极平台，置于所述第二腔室之中，所述下部电极平台用于承载工作件；以及
    过滤装置，包括过滤部、第一延伸部和第二延伸部，其中，所述过滤部置于所述第一腔室与所述第二腔室的交界处，且所述过滤部具有复数个通孔，用以在所述第一腔室内的所述等离子体经各个所述通孔进入所述第二腔室的过程中，对所述等离子体中的离子进行滤除；所述第一延伸部自所述过滤部于第一方向延伸，且放置于所述第一适配件之上；所述第二延伸部自所述过滤部的邻近所述第一延伸部的位置处于第二方向延伸至所述第一适配件的内侧，用以支撑所述过滤部；所述第二方向垂直于所述第一方向。
  2. 如权利要求1所述的等离子体系统，其特征在于，所述第一延伸部自所述过滤部的边缘于所述第一方向延伸呈现环状结构。
  3. 如权利要求1所述的等离子体系统，其特征在于，所述第一延伸部包括多个，且沿所述过滤部的圆周方向间隔设置，并且每个所述第一延伸部自所述过滤部的边缘于所述第一方向延伸形成凸状结构。
  4. 如权利要求1-3中的任意一项所述的等离子体系统，其特征在于，所述第一延伸部包括第一下表面与第二下表面，其中，所述第一下表面设置于所述第一适配件之上，所述第二下表面于所述过滤部的轴向上的位置高于所述第一下表面于所述过滤部的轴向上的位置。
  5. 如权利要求4所述的等离子体系统，其特征在于，所述第二下表面与所述第一适配件形成第二气体通路，且在所述第一适配件中形成有第一气 体通路，所述第一气体通路的出气端与所述第二气体通路相连通，用以使反应气体经过所述第一气体通路及所述第二气体通路后进入所述第一腔室。
  6. 如权利要求1-3任意一项所述的等离子体系统，其特征在于，在所述过滤部的轴向上，所述过滤部的厚度大于所述第一延伸部的厚度。
  7. 如权利要求1-3任意一项所述的等离子体系统，其特征在于，在所述过滤部的轴向上，所述过滤部的厚度小于或等于所述第一延伸部的厚度。
  8. 如权利要求1-3任意一项所述的等离子体系统，其特征在于，所述第一延伸部的上表面与所述过滤部的上表面共平面。
  9. 如权利要求1所述的等离子体系统，其特征在于，所述第二延伸部呈现桶状结构，且沿所述第一适配件的圆周方向环绕。
  10. 如权利要求1所述的等离子体系统，其特征在于，所述第一方向为沿着所述过滤部的径向且远离所述过滤部中心轴方向，所述第二方向为沿着所述过滤部的轴向向下的方向。
  11. 如权利要求1所述的等离子体系统，其特征在于，所述过滤部的不同位置于其轴向方向上不同位置处的厚度一致。
  12. 如权利要求11所述的等离子体系统，其特征在于，所述复数个通孔的深度与孔径的比值位于2到20的范围内。
  13. 如权利要求12所述的等离子体系统，其特征在于，所述复数个通孔的深度与孔径的比值为7或者10或者14。
  14. 如权利要求1所述的等离子体系统，其特征在于，所述过滤部的边缘部分的厚度大于所述过滤部的中心部分的厚度。
  15. 如权利要求14所述的等离子体系统，其特征在于，所述复数个通孔的深度与孔径的比值位于12到30的范围或者8.5到18的范围内。
  16. 如权利要求1所述的等离子体系统，其特征在于，所述复数个通孔的排布密度位于0.7个通孔/平方厘米至3个通孔/平方厘米的范围内。
  17. 如权利要求1所述的等离子体系统，其特征在于，所述介电窗为半 球状。
  18. 如权利要求1所述的等离子体系统，其特征在于，所述介电窗为桶状。
  19. 如权利要求18所述的等离子体系统，其特征在于，还包括:
    第二适配件，所述第二适配件具有环形底部和环形顶部，其中，所述环形底部设置于所述介电窗之上；
    顶盖，设置于所述介电窗的上方，并且所述顶盖包括导电材料；以及
    屏蔽件，所述屏蔽件包括环形主体和环形延伸部，其中，所述环形主体沿所述介质窗的圆周方向环绕在所述介质窗的内侧，且所述环形延伸部自所述环形主体延伸，并放置于所述环形底部之上。
  20. 如权利要求1所述的等离子体系统，其特征在于，所述过滤装置包括导电材料。
  21. 如权利要求20所述的等离子体系统，其特征在于，所述过滤装置包括铝。
  22. 一种应用于等离子体系统的过滤装置，所述等离子体系统包括介电窗以及设置于所述介电窗下方的适配件，所述介电窗所环绕的区域被设置为第一腔室，所述第一腔室用于容置等离子体，所述适配件所环绕的区域被设置为第二腔室，所述等离子体系统还包括置于所述第二腔室之中的下部电极平台，所述下部电极平台用于承载工作件，其特征在于，所述过滤装置包括过滤部、第一延伸部和第二延伸部，其中，所述过滤部置于所述第一腔室与所述第二腔室的交界处，且所述过滤部具有复数个通孔，用以在所述第一腔室内的所述等离子体经各个所述通孔进入所述第二腔室的过程中，对所述等离子体中的离子进行滤除；所述第一延伸部自所述过滤部于第一方向延伸，且放置于所述第一适配件之上；所述第二延伸部自所述过滤部的邻近所述第一延伸部的位置处于所述第二方向延伸至所述第一适配件的内侧，用以支撑所述过滤部；所述第二方向垂直于所述第一方向。
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