WO2021042289A1 - Multiplicateur d'électrons gazeux, tube photomultiplicateur à gaz et intensificateur d'image à rayons x à gaz - Google Patents

Multiplicateur d'électrons gazeux, tube photomultiplicateur à gaz et intensificateur d'image à rayons x à gaz Download PDF

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Publication number
WO2021042289A1
WO2021042289A1 PCT/CN2019/104376 CN2019104376W WO2021042289A1 WO 2021042289 A1 WO2021042289 A1 WO 2021042289A1 CN 2019104376 W CN2019104376 W CN 2019104376W WO 2021042289 A1 WO2021042289 A1 WO 2021042289A1
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WO
WIPO (PCT)
Prior art keywords
gas
electron multiplier
micro
anode plate
mesh
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PCT/CN2019/104376
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English (en)
Chinese (zh)
Inventor
张志永
刘建北
邵明
周意
Original Assignee
中国科学技术大学
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Application filed by 中国科学技术大学 filed Critical 中国科学技术大学
Priority to PCT/CN2019/104376 priority Critical patent/WO2021042289A1/fr
Priority to JP2022514969A priority patent/JP7466631B2/ja
Publication of WO2021042289A1 publication Critical patent/WO2021042289A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/50—Image-conversion or image-amplification tubes, i.e. having optical, X-ray, or analogous input, and optical output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
    • H01J43/04—Electron multipliers
    • H01J43/06—Electrode arrangements
    • H01J43/18—Electrode arrangements using essentially more than one dynode
    • H01J43/22—Dynodes consisting of electron-permeable material, e.g. foil, grid, tube, venetian blind

Definitions

  • the present disclosure proposes a gas electron multiplier, including: a readout anode plate 1; a micro-mesh electrode structure 2, which is formed by cascading n-layer micro-mesh electrodes 21 through a support structure 3, and the support structure 3 is fixed on the readout anode On the board 1; wherein, the micropores of the microgrid electrode 21 of the upper layer are misaligned with the micropores of the microgrid electrode 21 of the next layer, and the gas avalanche amplification area is formed between the microgrid electrodes 21, and n is an integer greater than or equal to 3.
  • the distance between the micro mesh electrodes 21 is 50-500 microns.
  • Fig. 1 schematically shows a structural diagram of a gas electron multiplier provided by an embodiment of the present disclosure.
  • the thickness of the micro-mesh electrode 21 can be, for example, between 10-40 microns, and the optical transmittance (or windowing rate) can be, for example, between 30% and 70%.
  • the electrode a uses a thinner mesh with a high windowing rate.
  • the gas avalanche pre-amplification zone (gap P) In order to facilitate the electrons to pass through the mesh into the first layer, the gas avalanche pre-amplification zone (gap P), to improve the collection efficiency of electrons.
  • the electrodes b and c adopt a denser mesh type, that is, the micro-mesh electrode 21 with low window opening rate and thicker to suppress IBFR.
  • three gaps are formed between the three-layer micro-mesh electrode 21 and the readout anode plate 1.
  • a strong electric field will be formed in the gap for the electron avalanche, and part of the electrons generated by the avalanche can be removed from the P
  • the (S) gap is transferred to the S(M) gap, thereby realizing gas cascade multiplication. Therefore, the selection of the gap and the distribution of the electrode voltage (gap electric field) have a direct impact on IBFR suppression and electron multiplication.
  • the photocathode 4 can be, for example, cesium iodide CsI (ultraviolet), basic or new semiconductor materials such as gallium arsenide (visible light).
  • the working gas G may be, for example, a mixed gas of an inert gas (argon, neon, xenon, etc.) and a negative gas (such as carbon tetrafluoride, methane, etc.).
  • the crystal material may be crystals such as quartz glass or magnesium fluoride, for example.
  • the reading anode plate 1 may be a ceramic reading plate, for example. The specific disclosure is not limited.
  • Fig. 4 schematically shows a structural diagram of a reflective gas photomultiplier tube according to an embodiment of the present disclosure.
  • the gas photomultiplier tube includes the gas electron multiplier and the photocathode 4 mentioned in the above embodiment.
  • the photocathode 4 can be, for example, cesium iodide CsI (ultraviolet), basic or new semiconductor materials such as gallium arsenide (visible light), and the working gas G can be, for example, inert gas (argon, neon, xenon, etc.) and negatively charged gas (for example, a mixed gas such as carbon tetrafluoride, methane, etc., the crystal material may be crystals such as quartz glass or magnesium fluoride, and the reading anode plate 1 may be, for example, a ceramic reading plate, which is not limited in this disclosure.
  • CsI ultraviolet
  • basic or new semiconductor materials such as gallium arsenide (visible light)
  • the working gas G can be, for example, inert gas (argon, neon, xenon, etc.) and negatively charged gas (
  • a mixed gas such as carbon tetrafluoride, methane, etc.
  • the crystal material may be crystals such as quartz glass or magnesium fluoride

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  • Measurement Of Radiation (AREA)

Abstract

L'invention concerne un multiplicateur d'électrons gazeux, comprenant : une plaque d'anode de lecture (1) ; une structure d'électrode à micro-maillage (2), formée par le montage en cascade de n couches d'électrodes à micro-maillage (21) au moyen d'une structure de support (3), la structure de support (3) étant fixée sur la plaque d'anode de lecture (1) ; les micropores de l'électrode à micro-maillage (21) de la couche précédente sont décalées par rapport aux micropores de l'électrode à micro-maillage (21) de la couche suivante, une région d'amplification d'avalanche de gaz est formée entre les électrodes à micro-maillage (21), et n est un nombre entier supérieur ou égal à 3. Le multiplicateur d'électrons gazeux peut augmenter le gain total de la multiplication d'électrons tout en réduisant le taux de retour d'ions. La production d'un photodétecteur sur la base du multiplicateur d'électrons gazeux évite les problèmes de coût accru et de taux de comptage réduit provoqués par des électrodes résistives et augmente la stabilité de gain, et résout également le problème d'un matériau de photocathode sensible à la lumière visible qui est facilement endommagé par réaction ionique.
PCT/CN2019/104376 2019-09-04 2019-09-04 Multiplicateur d'électrons gazeux, tube photomultiplicateur à gaz et intensificateur d'image à rayons x à gaz WO2021042289A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2019/104376 WO2021042289A1 (fr) 2019-09-04 2019-09-04 Multiplicateur d'électrons gazeux, tube photomultiplicateur à gaz et intensificateur d'image à rayons x à gaz
JP2022514969A JP7466631B2 (ja) 2019-09-04 2019-09-04 ガス電子増倍器、ガス光電増倍管及びガスｘ線像増強器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/104376 WO2021042289A1 (fr) 2019-09-04 2019-09-04 Multiplicateur d'électrons gazeux, tube photomultiplicateur à gaz et intensificateur d'image à rayons x à gaz

Publications (1)

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WO2021042289A1 true WO2021042289A1 (fr) 2021-03-11

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PCT/CN2019/104376 WO2021042289A1 (fr) 2019-09-04 2019-09-04 Multiplicateur d'électrons gazeux, tube photomultiplicateur à gaz et intensificateur d'image à rayons x à gaz

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JP (1) JP7466631B2 (fr)
WO (1) WO2021042289A1 (fr)

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CN115950920A (zh) * 2023-03-16 2023-04-11 中国科学技术大学 一种基于微流控技术的微结构气体探测器及其制备方法

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CN113777134A (zh) * 2021-08-26 2021-12-10 中国原子能科学研究院 一种定位方法、读出电极及微结构气体探测器
CN115950920A (zh) * 2023-03-16 2023-04-11 中国科学技术大学 一种基于微流控技术的微结构气体探测器及其制备方法

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JP7466631B2 (ja) 2024-04-12

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