WO2021040309A1 - Photomasque, son procédé de fabrication, et procédé de fabrication d'un dispositif d'affichage l'utilisant - Google Patents

Photomasque, son procédé de fabrication, et procédé de fabrication d'un dispositif d'affichage l'utilisant Download PDF

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Publication number
WO2021040309A1
WO2021040309A1 PCT/KR2020/011003 KR2020011003W WO2021040309A1 WO 2021040309 A1 WO2021040309 A1 WO 2021040309A1 KR 2020011003 W KR2020011003 W KR 2020011003W WO 2021040309 A1 WO2021040309 A1 WO 2021040309A1
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WIPO (PCT)
Prior art keywords
layer
photomask
pattern
substrate
pattern layer
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PCT/KR2020/011003
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English (en)
Korean (ko)
Inventor
심우영
백상윤
장기석
정순신
문정민
Original Assignee
엘지디스플레이 주식회사
연세대학교 산학협력단
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Publication of WO2021040309A1 publication Critical patent/WO2021040309A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present specification relates to a photomask, and more particularly, to provide a photomask capable of forming a pattern layer having a narrow line width even with light having a long wavelength, a method of manufacturing the same, and a method of manufacturing a display device using the same.
  • Such a display device includes at least one substrate, and a plurality of fine patterns are disposed on the substrate. In order to form such a fine pattern, a patterning process using photolithography may be performed.
  • One or more photomasks may be used in the photolithography process.
  • problems such as suppression of resolution due to diffraction are known.
  • a light source with a short wavelength capable of suppressing diffraction may be used, but in order to use a light source with a short wavelength, it is necessary to replace the existing production facility with a production facility capable of using a light source with a short wavelength.
  • replacement of production equipment can incur enormous costs. Accordingly, the inventors of the present specification invented a photomask capable of forming a fine pattern without changing production equipment, a method for manufacturing the same, and a method for manufacturing a display device using the same.
  • a photomask according to an exemplary embodiment of the present specification includes a flexible substrate layer and a pattern layer.
  • the above-described base layer may be a flexible base layer in which a concave portion is located on one surface.
  • the above-described pattern layer may fill the above-described concave portion, and one surface may be exposed.
  • the maximum depth of the above-described concave portion and the maximum thickness of the above-described pattern layer may correspond to each other.
  • the above-described photomask may include a contact surface divided into a pattern region in which one surface of the above-described pattern layer is exposed and a substrate region in which the above-described flexible substrate layer is exposed.
  • the above-described pattern layer may fill the above-described concave portion to planarize the above-described contact surface.
  • Each of the above-described pattern region and the above-described substrate region may have a planar shape.
  • the above-described contact surface may have a planar shape.
  • the above-described pattern region and the above-described substrate region may be located on the same plane.
  • the above-described flexible substrate layer may have a transmittance of 80% to 99% for light having a wavelength of 10 nm to 600 nm.
  • the above-described pattern layer may have a transmittance of 0% to 10% for light having a wavelength of 10 nm to 600 nm.
  • the above-described flexible substrate layer may include polydimethylsiloxane.
  • the pattern layer described above may include chromium.
  • a photomask manufacturing method includes forming a pattern layer protruding on a substrate, forming a flexible substrate layer positioned on the above-described substrate and covering the above-described pattern layer, and the above It may include the step of peeling one flexible substrate layer from the above-described substrate.
  • Forming the protruding pattern layer on the above-described substrate includes forming a photoresist layer on the above-described substrate, patterning the above-described photoresist layer, and patterning the above-described patterned photoresist layer. It may include depositing a layer and stripping the photoresist layer described above.
  • the step of peeling the above-described flexible substrate layer may be a step of peeling the protruding pattern layer and the above-described flexible substrate layer formed on the above-described substrate.
  • a method of manufacturing a display device may include exposing the above-described photoresist layer in a state in which the pattern layer of the above-described photomask is in contact with a photoresist layer positioned on a substrate. .
  • the photomask since the photomask includes a flexible substrate layer having a concave portion on one surface and a pattern layer filling the above-described concave portion, it is possible to contact along the surface of the photoresist layer, so that a short wavelength light source is not used. There is an effect of realizing a fine pattern by contact printing.
  • the method of manufacturing a photomask has an effect of manufacturing a photomask capable of implementing a fine pattern by contact printing since it can contact along the surface of the photoresist layer.
  • the method of manufacturing a display device has an effect of manufacturing a display device having a fine pattern by exposing the photoresist layer in a state in which the above-described photomask is in contact with the photoresist layer. have.
  • FIG. 1 is a schematic cross-sectional view of a photomask according to an embodiment.
  • FIG. 2 is a schematic plan view of a photomask according to an exemplary embodiment.
  • 3 to 8 are schematic diagrams for explaining a method of manufacturing a photomask according to an exemplary embodiment.
  • FIG. 9 is a schematic diagram illustrating a method of manufacturing a display device according to an exemplary embodiment.
  • FIG. 10 is a schematic diagram illustrating a method of manufacturing a display device according to a comparative example.
  • FIG. 11 is data for explaining a method of manufacturing a display device according to a comparative example.
  • 15 is data showing formation of a fine pattern using a photomask according to an embodiment on a rough surface of a substrate and a surface having defects.
  • 16 and 17 are data for a reflective display manufactured using a photomask according to an embodiment.
  • FIG. 1 is a schematic cross-sectional view of a photomask according to an embodiment of the present specification.
  • a photomask 100 fills a flexible substrate layer 110 and a concave portion 111 in which a concave portion 111 is positioned on one surface, and a pattern layer having one surface exposed ( 120).
  • the flexible substrate layer 110 may include a flexible material. Since the photomask 100 includes the flexible substrate layer 110, the photomask 100 can contact the photoresist layer without a gap, thereby preventing a reduction in resolution due to diffraction in the exposure process of the photoresist layer. .
  • the flexible substrate layer 110 may have excellent light transmittance.
  • the flexible substrate layer 110 may have a transmittance of 80% to 99% for light having a wavelength of 10 nm to 600 nm, for example.
  • a light source having a small output may be used.
  • the flexible substrate layer 110 is a flexible material, and may include, for example, polydimethylsiloxane (PDMS).
  • PDMS polydimethylsiloxane
  • the flexible substrate layer 110 has a concave portion 111 positioned on one surface thereof. Since the concave portion 111 is positioned on one surface of the flexible substrate layer 110, the pattern layer 120 may be embedded in the flexible substrate layer 110.
  • the pattern layer 120 fills the concave portion 111, and one surface is exposed. Referring to FIG. 1, while the pattern layer 120 is inserted into the flexible substrate layer 110, one surface of the pattern layer 120 may be exposed on the one surface of the photomask.
  • the pattern layer 120 has light blocking properties and may block a part of the light irradiated to the photomask 100.
  • the pattern layer 120 may have a transmittance of 0% to 10% for light having a wavelength of 10 nm to 600 nm.
  • the pattern layer 120 may include metal.
  • the pattern layer 120 may include chromium.
  • chromium is used as the material for the pattern layer 120, the processability is excellent, and the light-shielding pattern layer can be easily formed.
  • the photomask 100 may include a contact surface 130 in contact with the photoresist.
  • the maximum depth d of the concave portion 111 and the maximum thickness t of the pattern layer 120 correspond to each other. That the maximum depth d of the concave portion 111 and the maximum thickness t of the pattern layer 120 correspond to each other means that the maximum depth d of the concave portion 111 and the maximum thickness of the pattern layer 120 ( It can mean that t) is substantially the same.
  • the maximum depth d of the concave portion 111 may mean a degree in which the concave portion 111 is maximally depressed in the thickness direction of the photomask 100.
  • the maximum depth d of the concave portion 111 may be, for example, a difference between a minimum value and a maximum value of a thickness between one surface of the flexible substrate layer 110 on which the concave portion 111 is formed and the opposite surface. .
  • the maximum depth d of the concave portion 111 is, for example, the maximum depth of the concave portion 111 measured in a direction perpendicular to the contact surface 130 from the contact surface 130 when the contact surface 130 has a planar shape It can mean (d).
  • the maximum thickness t of the pattern layer 120 may mean a maximum value of the thickness measured in the thickness direction of the photomask 100 of the pattern layer 120 filling the concave portion 111.
  • the maximum thickness t of the pattern layer 120 is, for example, the maximum thickness of the pattern layer 120 measured in a direction perpendicular to the contact surface 130 from the contact surface 130 when the contact surface 130 has a flat shape. It can mean (t).
  • the maximum depth (d) of the concave portion 111 and the maximum thickness (t) of the pattern layer 120 are measured at each concave portion. It may mean the depth of the concave portion 111 and the thickness of the pattern layer 120.
  • the maximum depth (d) of the concave portion 111 and the maximum thickness (t) of the pattern layer 120 correspond to each other, so that the pattern layer 120 can fill the concave portion 111 to the contact surface 130 of the photomask. I can. Accordingly, when the contact surface 130 of the photomask 100 contacts the photoresist, the gap between the edge portion of the pattern layer 120 and the photoresist can be minimized. When the gap between the edge portion of the pattern layer 120 and the photoresist is minimized, light diffracts while passing through the edge portion of the pattern layer 120 to reduce resolution.
  • the pattern layer 120 may fill the concave portion 111 to planarize the contact surface 130. That is, the pattern layer 120 may fill the concave portion 111 so that there is no step difference between the pattern layer 120 and the flexible substrate layer 110 on the contact surface 130.
  • the contact surface 130 may be divided into a pattern region 131 in which one surface of the pattern layer 120 is exposed and a substrate region 132 in which the flexible substrate layer 110 is exposed. Accordingly, when the contact surface 130 contacts the photoresist, the pattern region 131 and the substrate region 132 constituting the contact surface 130 contact the photoresist, and one surface of the pattern layer 120 is in contact with the photoresist. I can contact you.
  • the photomask 100 has the above-described structure, since the gap between the pattern layer 120 and the photoresist can be minimized, a reduction in resolution due to diffraction can be effectively suppressed.
  • the pattern region 131 and the substrate region 132 may each have a planar shape. That is, one exposed surface of the pattern layer 120 may have a planar shape, and the flexible substrate exposed because the pattern layer 120 is not located on one surface where the concave portion 111 of the flexible substrate layer 110 is located. A portion of the layer 110 may also have a planar shape.
  • the contact surface 130 may also have a planar shape. Since the contact surface 130 of the photomask 100 is in a planar shape, the gap between the pattern layer 120 and the photoresist is minimized when the contact surface 130 contacts the photoresist, thereby suppressing deterioration of resolution due to diffraction. have.
  • the pattern region 131 and the substrate region 132 may be located on the same plane. That is, there may be no step difference between the pattern layer 120 and the flexible substrate layer 110 on the contact surface 130.
  • the load of the photomask is minimized while minimizing the gap between the photoresist and the pattern layer 120 when the photomask 100 contacts the photoresist. Since it may be dispersed in the flexible substrate layer 110, damage to the pattern layer 120 due to contact between the photoresist and the pattern layer 120 may be prevented.
  • 3 to 8 are diagrams illustrating a method of manufacturing a photomask according to an exemplary embodiment.
  • a photomask manufacturing method includes the steps of forming the pattern layer 120 protruding on the substrate 140, and the protruding pattern layer 120 positioned on the substrate 140 and described above. ) Forming the flexible substrate layer 110 covering the ), and peeling the above-described flexible substrate layer 110 from the above-described substrate 140.
  • the type of the substrate 140 is not particularly limited, for example, a silicon layer (Si), a silicon oxide layer (SiO 2 ), and a nickel (Ni) layer sequentially stacked as a sacrificial layer may be used.
  • Forming the pattern layer 120 protruding on the substrate 140 includes, for example, forming a photoresist layer 150 on the substrate 140 and patterning the photoresist layer 150.
  • the steps may include depositing the pattern layer 120 on the patterned photoresist layer 150 and stripping the photoresist layer 150.
  • FIG. 4 is a view showing that a photoresist layer 150 is formed on the substrate 140.
  • the type of the photoresist layer 150 is not particularly limited, but, for example, polymethylmethacrylate (PMMA) may be used.
  • a method of forming the photoresist layer 150 on the substrate 140 may be, for example, a method of coating a photoresist composition on the substrate 140.
  • FIG. 5 is a diagram illustrating a patterned photoresist layer 150 formed on the substrate 140.
  • a method of patterning the photoresist layer 150 may be, for example, e-beam lithography.
  • the deposition method of the pattern layer 120 may be, for example, a chemical vapor deposition method such as a thermal evaporation method, a plasma vapor deposition method, an atmospheric vapor deposition method, a low pressure vapor deposition method, or a physical vapor deposition method such as a thermal evaporation method, an electron beam evaporation method, or sputtering.
  • a chemical vapor deposition method such as a thermal evaporation method, a plasma vapor deposition method, an atmospheric vapor deposition method, a low pressure vapor deposition method, or a physical vapor deposition method such as a thermal evaporation method, an electron beam evaporation method, or sputtering.
  • the step of stripping the photoresist layer 150 may be performed in a step in which the pattern layer 120 is deposited on the patterned photoresist layer 150 shown in FIG. 6.
  • the pattern layer 120 disposed on the photoresist layer 150 is also removed, and The protruding pattern layer 120 may be formed.
  • the flexible substrate layer 110 may be formed, for example, by a method of photocuring or thermosetting after coating the composition.
  • the aforementioned concave portion may be formed on one surface of the substrate layer 110.
  • FIG. 8 is a diagram illustrating peeling of the flexible substrate layer 110 from the substrate 140.
  • the step of peeling the flexible substrate layer 110 may be a step of peeling the protruding pattern layer 120 formed on the substrate 140 together with the flexible substrate layer 110.
  • the substrate layer 110 is peeled after applying and curing a polydimethylsiloxane (PDMS) composition on the substrate 140 and the pattern layer 120, the pattern layer 120 is peeled off from the substrate 140 Can be.
  • PDMS polydimethylsiloxane
  • FIG. 9 is a diagram for describing a method of manufacturing a display device according to an exemplary embodiment of the present specification.
  • a photoresist layer 151 disposed on a substrate 141 is in contact with the pattern layer 120 of the photomask described above. And exposing the photoresist layer 151 to light.
  • the substrate 141 is a substrate on which a pattern is to be formed by a photolithography process, and its type is not particularly limited as long as it is used in the field of a display device.
  • the photoresist layer 151 is a photosensitive layer used to form a pattern by a photolithography process, and its type is not particularly limited as long as it is used in the field of a display device.
  • the pattern layer 120 directly contacts the photoresist layer 151.
  • the flexible substrate layer 110 may also directly contact the photoresist layer 151.
  • FIG. 10 is a diagram illustrating a method of manufacturing a display device according to a comparative example.
  • the photoresist layer 151 is spaced apart from the photoresist layer 151 on the substrate 141 with a specific gap S. ) Can be performed.
  • the photomask 200 when the photomask 200 is a flat and stiff material, for example, a fine metal mask, the photomask 200 is brought into contact with the photomask 200 and the photoresist layer 151. In order to prevent damage to ), the photomask 200 may be disposed with a specific gap S.
  • damage to the pattern layer may be applied when the protruding pattern layer contacts the photoresist layer, thus preventing damage to the photomask by contact.
  • a photomask may be disposed with a specific gap.
  • FIG. 11 is a data for explaining that the resolution of the photolithography process decreases due to the diffraction of light when the photoresist layer is exposed with a photomask disposed with a specific gap (S) as shown in FIG. 10 to be.
  • the photolithography process shown in FIG. 10 is intended to be irradiated with light as indicated by a dotted line, but the photomask 200 is spaced apart from the photoresist layer 151 by a specific gap S. It can be seen that the light was irradiated as indicated by a solid line as a result of proceeding the process in the state of being turned on.
  • FIG. 12 is data for explaining fine patterns that can be formed when using a photomask according to an exemplary embodiment of the present specification.
  • FIG. 12 is a view of forming a resolution test pattern (USAF Resolving Power Test Target 1951) using a light source having a wavelength of 400 nm to 500 nm and a photomask according to an embodiment of the present specification.
  • a protruding pattern layer 120 was formed on the substrate 140, and plan photographs thereof are shown in b and e.
  • a photomask including the flexible substrate layer 110 and the pattern layer 120 was manufactured, and plan photographs are shown in c and f. I got it.
  • a patterned photoresist layer 151 was formed on the substrate 141 by using the above-described photomask, and plan photographs thereof are shown in d and g. Referring to FIG.
  • the line width of the patterned layer 120 of the photomask is effectively reflected in the line width of the patterned photoresist layer 151 formed using the photomask, as can be seen through i.
  • 13 is data for explaining fine patterns that can be formed when using a photomask according to embodiments of the present specification.
  • FIG. 13 illustrates a line pattern and a dot pattern formed by using a photomask and a light source having a wavelength of 400 nm to 500 nm according to exemplary embodiments of the present specification.
  • a line having a line width of 60 nm and 160 nm is a light source of 400 nm to 500 nm, not a short wavelength such as Deep UV (DUV) or Extreme UV (EUV). Patterns and dot patterns can be formed.
  • DUV Deep UV
  • EUV Extreme UV
  • FIG. 14 is data showing that a pattern is formed on a curved surface rather than a flat surface using a photomask according to an exemplary embodiment of the present specification.
  • a PET substrate was placed on a structure having a radius of curvature of 250 nm, and a photomask according to an embodiment of the present specification was exposed using a light source having a wavelength of 400 nm to 500 nm. Referring to FIG. 13, it can be seen that even when exposure is performed on a substrate having a curvature, a pattern having a line width of 38 nm is formed.
  • the photomask according to an embodiment of the present specification includes a flexible substrate layer in which a concave portion is located and a pattern layer that fills the concave portion, and the maximum depth of the concave portion and the maximum thickness of the pattern layer correspond to each other.
  • the contact surface of the photomask may be in close contact with a substrate having a curvature, and thus, a reduction in resolution due to diffraction may be prevented, and thus a fine pattern may be formed even on a substrate having a curvature.
  • 15 is a data showing that a pattern is formed on a rough surface of a substrate and a surface having defects by using a photomask according to an exemplary embodiment of the present specification.
  • a rough surface was formed using leaves (a).
  • the surface of the leaf is rougher than the plastic substrate and has defects, so it is difficult to implement a pattern when using a conventional photolithography process.
  • a pattern was formed on a rough surface formed using leaves using a photomask according to an embodiment of the present specification (b, c, d, e, f, g).
  • a photomask according to an embodiment of the present specification (b, c, d, e, f, g).
  • patterns were formed in areas with defects such as curl, step, and kink (k, l, m).
  • the photomask according to the embodiments of the present specification since the photomask can adhere closely along the surface shape of the photoresist layer, a fine pattern can be formed even on a rough surface or a defective area.
  • 16 is data for a reflective display manufactured using a photomask according to an exemplary embodiment of the present specification.
  • An image was implemented on the substrate using a plasmonic nano pattern with a size of 0.96 mm in width and 1.2 mm in height (b). Patterning was performed on a silver (Ag) substrate using a photomask according to an embodiment of the present specification, and plasmonic nanopatterns having different sizes were formed in portions requiring different colors (c to k).
  • plasmonic nano-patterns of various sizes can be formed, and thus a reflective display can be implemented by using a resonance phenomenon of light reflected from a nano-sized pattern.
  • 17 is data for a reflective display manufactured using a photomask according to an exemplary embodiment of the present specification.
  • a reflective display having various colors can be manufactured by forming a plasmonic nano pattern. Since the implemented color can be changed according to the type of metal substrate and the thickness of the photoresist, even if the same photomask is used, the type of the metal substrate and the thickness of the photoresist can be changed to manufacture a reflective display in which various colors are implemented. I can.

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  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Toxicology (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

Des modes de réalisation de la présente spécification concernent un photomasque, son procédé de fabrication, et un procédé de fabrication d'un dispositif d'affichage l'utilisant, et, plus spécifiquement, un photomasque comprenant : une couche de base ayant une partie évidée située sur un côté de celle-ci ; et une couche de motif remplissant la partie évidée et ayant une surface exposée, la profondeur maximale de la partie évidée et l'épaisseur maximale de la couche de motif correspondant l'une à l'autre, et le photomasque peut ainsi exposer une résine photosensible tout en étant en contact étroit avec la résine photosensible et former un motif ayant une largeur de ligne fine même lorsqu'une source de lumière ayant une longueur d'onde relativement longue est utilisée.
PCT/KR2020/011003 2019-08-23 2020-08-19 Photomasque, son procédé de fabrication, et procédé de fabrication d'un dispositif d'affichage l'utilisant WO2021040309A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0103926 2019-08-23
KR1020190103926A KR20210023567A (ko) 2019-08-23 2019-08-23 포토마스크, 이의 제조방법 및 이를 이용한 표시장치의 제조방법

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WO2021040309A1 true WO2021040309A1 (fr) 2021-03-04

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060152703A1 (en) * 2003-05-12 2006-07-13 Canon Kabushiki Kaisha Method of detecting relative position of exposure mask and object to be exposed, alignment method, and exposure method using the same
US20090130573A1 (en) * 2005-05-19 2009-05-21 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Multilayer active mask lithography
US20100261098A1 (en) * 2009-04-13 2010-10-14 Battelle Memorial Institute High resolution photomask
KR20170013844A (ko) * 2015-07-28 2017-02-07 주식회사 엘지화학 포토마스크, 상기 포토마스크를 포함하는 적층체, 상기 포토마스크의 제조방법, 상기 포토마스크를 이용하는 패턴형성장치 및 상기 포토마스크를 이용하는 패턴형성방법
US20170090280A1 (en) * 2015-03-26 2017-03-30 Boe Technology Group Co., Ltd. Mask plate, mask exposure device and mask exposure method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060152703A1 (en) * 2003-05-12 2006-07-13 Canon Kabushiki Kaisha Method of detecting relative position of exposure mask and object to be exposed, alignment method, and exposure method using the same
US20090130573A1 (en) * 2005-05-19 2009-05-21 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Multilayer active mask lithography
US20100261098A1 (en) * 2009-04-13 2010-10-14 Battelle Memorial Institute High resolution photomask
US20170090280A1 (en) * 2015-03-26 2017-03-30 Boe Technology Group Co., Ltd. Mask plate, mask exposure device and mask exposure method
KR20170013844A (ko) * 2015-07-28 2017-02-07 주식회사 엘지화학 포토마스크, 상기 포토마스크를 포함하는 적층체, 상기 포토마스크의 제조방법, 상기 포토마스크를 이용하는 패턴형성장치 및 상기 포토마스크를 이용하는 패턴형성방법

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