WO2021036011A1 - 基于平面波导芯片的光接收引擎 - Google Patents

基于平面波导芯片的光接收引擎 Download PDF

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WO2021036011A1
WO2021036011A1 PCT/CN2019/119106 CN2019119106W WO2021036011A1 WO 2021036011 A1 WO2021036011 A1 WO 2021036011A1 CN 2019119106 W CN2019119106 W CN 2019119106W WO 2021036011 A1 WO2021036011 A1 WO 2021036011A1
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Prior art keywords
detector
waveguide chip
photosensitive area
receiving engine
mode field
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PCT/CN2019/119106
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English (en)
French (fr)
Inventor
陈亦凡
郑睿
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苏州易锐光电科技有限公司
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Priority to US17/632,655 priority Critical patent/US20220276454A1/en
Publication of WO2021036011A1 publication Critical patent/WO2021036011A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4286—Optical modules with optical power monitoring
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4215—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4287—Optical modules with tapping or launching means through the surface of the waveguide
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/60—Receivers
    • H04B10/66—Non-coherent receivers, e.g. using direct detection
    • H04B10/67—Optical arrangements in the receiver
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12019—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the optical interconnection to or from the AWG devices, e.g. integration or coupling with lasers or photodiodes

Definitions

  • the application relates to a light receiving engine based on a planar waveguide chip, which belongs to the technical field of optical communication.
  • optical transceiver is an important part of the overall optical communication link, and functions to realize the conversion of photoelectric signals.
  • the wavelength division multiplexing device can be used to couple multiple optical signals of different wavelengths to a single optical fiber.
  • an arrayed waveguide chip is usually used to realize the light splitting processing of the light in the optical fiber.
  • the arrayed waveguide chip needs to have wavelength insensitivity, that is, a flat-topped transmission spectrum.
  • the flat-top transmission spectrum is realized by fabricating the output waveguide of the arrayed waveguide chip into a multi-mode waveguide structure. At this time, when the wavelength changes, the mode field distribution of the output waveguide of the arrayed waveguide chip changes correspondingly.
  • an arrayed waveguide chip with a multimode waveguide structure cannot maintain a single mode field characteristic at the exit end, which makes the coupling between the arrayed waveguide chip and the detector difficult and the coupling efficiency is low.
  • the present application provides a light receiving engine based on a planar waveguide chip, which can solve the problem of low coupling efficiency between the existing arrayed waveguide chip and the detector.
  • This application provides the following technical solutions:
  • Optical receiving engine based on planar waveguide chip including:
  • An arrayed waveguide chip for receiving optical signals emitted by optical fibers.
  • the output waveguide of the arrayed waveguide chip has a multi-mode waveguide structure. Light enters the arrayed waveguide chip and then passes through the output waveguide. Lights with different wavelengths correspond to the The mode field distribution of the output waveguide is different;
  • a detector coupled to the array waveguide chip, the photosensitive area of the detector is determined based on the mode field distribution range of the output waveguide;
  • An amplifier connected to the detector.
  • the normal direction of the light exit surface of the arrayed waveguide chip points to the photosensitive area of the detector.
  • the array waveguide chip is formed with a total reflection surface, and the total reflection surface is used to totally reflect the light transmitted in the array waveguide chip to the upper surface of the array waveguide chip to exit;
  • the center of the photosensitive area coincides with the center of the output light field on the upper surface.
  • the arrayed waveguide chip is supported by a support, so that the detector is separated from the area on the upper surface of the arrayed waveguide chip for emitting light by a predetermined distance.
  • the photosensitive area of the detector includes a mode field distribution range of the output waveguide, and the size of the photosensitive area is less than or equal to a size threshold.
  • the shape of the mode field distribution range is a rectangle.
  • the photosensitive area of the detector is a rectangle, and the ratio of the width to the height of the rectangle of the photosensitive area is equal to the rectangle of the mode field distribution range. The ratio of the width to the height.
  • the shape of the mode field distribution range is an ellipse
  • the photosensitive area of the detector is an ellipse
  • the ratio of the long axis to the short axis of the ellipse of the photosensitive area is equal to the mode The ratio of the major axis to the minor axis of the ellipse of the field distribution range.
  • the detector is connected to the amplifier by gold wire bonding.
  • the arrayed waveguide chip includes a core layer and a cladding layer wrapped around the core layer, and the ratio of the width to the height of the core layer ranges from [3, 5]; the refractive index of the core layer The range of the difference between the refractive index of the cladding layer is [0.75%, 2.5%].
  • the amplifier is a transimpedance amplifier.
  • the beneficial effects of the present application are: by setting the arrayed waveguide chip for receiving the optical signal from the optical fiber, the output waveguide of the arrayed waveguide chip has a multimode waveguide structure, and the light enters the arrayed waveguide chip and then is output through the output waveguide; light with different wavelengths The corresponding output waveguides have different mode field distributions; for the detector coupled with the arrayed waveguide chip, the photosensitive area of the detector is determined based on the mode field distribution range of the output waveguide; and the amplifier connected to the detector; it can solve the existing arrayed waveguide chip The problem of low coupling efficiency with the detector; by optimizing the photosensitive area of the detector, the photosensitive area can be matched with the light spot mode field of the waveguide chip to improve the coupling efficiency.
  • FIG. 1 and 2 are schematic diagrams of the structure of a light receiving engine based on a planar waveguide chip provided by an embodiment of the present application;
  • FIG. 3 is a schematic cross-sectional view of an arrayed waveguide chip provided by an embodiment of the present application.
  • FIG. 4 is a schematic diagram of the photosensitive area of the detector provided by an embodiment of the present application.
  • Fig. 5 is a schematic diagram of a photosensitive area of a detector provided by another embodiment of the present application.
  • Figures 1 and 2 are schematic diagrams of the structure of an optical receiving engine based on a planar waveguide chip provided by an embodiment of the present application. As shown in the figure, the optical receiving engine at least includes:
  • the arrayed waveguide chip 1 is used to receive the optical signal from the optical fiber.
  • the output waveguide of the arrayed waveguide chip 1 has a multi-mode waveguide structure. The light enters the arrayed waveguide chip 1 and then is output through the output waveguide; the light with different wavelengths corresponds to the mode field of the output waveguide Different distribution
  • the detector 2 coupled to the arrayed waveguide chip 1, and the photosensitive area of the detector 2 is determined based on the mode field distribution range of the output waveguide;
  • Amplifier 3 connected to the detector 2.
  • the photosensitive area of the detector 2 is determined based on the variation range of the peak position in the mode field distribution of the output waveguide.
  • the arrayed waveguide chip 1 includes a core layer 11 and a cladding layer 12 wrapped around the core layer 11.
  • the core layer 11 is rectangular, and the ratio of the width to the height of the rectangle ranges from [3, 5]; the refractive index of the core layer 11 and the cladding layer
  • the range of the difference in refractive index of 12 is [0.75%, 2.5%].
  • the coupling modes of the arrayed waveguide chip 1 and the detector 2 include but are not limited to the following:
  • the first type (refer to FIG. 1): the normal direction of the light-emitting surface of the arrayed waveguide chip 1 points to the photosensitive area of the detector 2.
  • the detector 2 is directly fixed on the light-emitting surface of the arrayed waveguide chip 1; or, there is air space between the detector 2 and the light-emitting surface of the arrayed waveguide chip 1.
  • the second type (refer to FIG. 2): the arrayed waveguide chip 1 is formed with a total reflection surface 13, and the total reflection surface 13 is used to totally reflect the light transmitted in the array waveguide chip 1 to the upper surface 14 of the array waveguide chip 1 to exit; a detector; The center of the photosensitive area of 2 coincides with the center of the output light field of the upper surface 14.
  • the optical signal (indicated by the dashed arrow) inside the arrayed waveguide chip 1 exits from the upper surface 14 after passing through the total reflection surface 13 of the arrayed waveguide chip 1, and is directed toward the detector after being refracted at the interface between the arrayed waveguide chip 1 and the air layer. 2The center of the photosensitive area.
  • the arrayed waveguide chip 1 passes through the support 4 It is supported so that the detector 2 and the area of the upper surface 14 of the arrayed waveguide chip for emitting light are separated by a predetermined distance.
  • the total reflection surface 13 may be formed by polishing the end surface of the arrayed waveguide chip 1; or, it may be formed by a reflector provided on the end surface of the array waveguide chip 1. This embodiment does not limit the arrangement of the total reflection surface 13 .
  • the way of connecting the detector 2 and the amplifier 3 may be a gold wire bonding connection.
  • the amplifier 3 may be a trans-impedance amplifier (TIA), of course, it may also be another type of amplifier, which is not limited in this embodiment.
  • TIA trans-impedance amplifier
  • the method for determining the photosensitive area of the detector 2 based on the mode field distribution range of the output waveguide includes: the photosensitive area of the detector 2 includes the mode field distribution range, and the size of the photosensitive area is less than or equal to the size threshold.
  • the photosensitive area of the detector 2 is greater than or equal to the mode field distribution range of the output waveguide.
  • the size threshold is determined according to the maximum detection bandwidth of the detector 2. Since the maximum detection bandwidth of the detector 2 is fixed, and the larger the photosensitive area of the detector 2, the smaller the corresponding bandwidth. Therefore, in this embodiment, in order to ensure the maximum detection bandwidth requirement of the detector 2, the photosensitive area of the detector 2 is smaller than Or equal to the size threshold.
  • the shape of the mode field distribution range of the output waveguide is a rectangle.
  • the photosensitive area of the detector is rectangular, and the ratio of the width to the height of the rectangle of the photosensitive area is equal to the rectangular shape of the mode field distribution range.
  • the ratio of width to height For example, if the ratio of the width to the height of the rectangle of the mode field distribution range is 2:1, then the ratio of the width to the height of the rectangle of the photosensitive area is 2:1.
  • the photosensitive area of the detector 2 can detect the mode field distribution of the output waveguide corresponding to each wavelength.
  • the shape of the mode field distribution range is an ellipse.
  • the photosensitive area of the detector is an ellipse, and the ratio of the long axis to the short axis of the ellipse of the photosensitive area is equal to the ellipse of the mode field distribution range
  • the ratio of the major axis to the minor axis For example, if the ratio of the major axis to the minor axis of the ellipse of the mode field distribution range is 2:1, the ratio of the major axis to the minor axis of the ellipse of the photosensitive area is also 2:1.
  • the photosensitive area of the detector 2 can detect the mode field distribution of the output waveguide corresponding to each wavelength.
  • the size of the photosensitive area of the detector 2 is determined based on the size of the mode field distribution range of the output waveguide.
  • the size of the photosensitive area of the detector 2 does not need to be fixed to the size threshold, which can ensure the detection accuracy. In some scenes
  • the area of the photosensitive area of the detector 2 can also be reduced, and the maximum detection bandwidth of the detector 2 can be increased.
  • the light receiving engine based on the planar waveguide chip provided in this embodiment may also have other components, such as a substrate with electrical functions and mechanical support functions, which are not listed here in this embodiment.
  • the light receiving engine based on the planar waveguide chip provided in this embodiment is provided with an arrayed waveguide chip for receiving optical signals from an optical fiber.
  • the output waveguide of the arrayed waveguide chip has a multimode waveguide structure, and light is incident on the array.
  • the waveguide chip is output through the output waveguide; the light with different wavelengths corresponds to the different mode field distribution of the output waveguide; the detector coupled with the arrayed waveguide chip, the photosensitive area of the detector is determined based on the mode field distribution range of the output waveguide; and
  • the connected amplifier can solve the problem of low coupling efficiency between the existing arrayed waveguide chip and the detector; by optimizing the photosensitive area of the detector, the photosensitive area can be matched with the light spot mode field of the waveguide chip and the coupling efficiency can be improved.
  • the photosensitive area of the detector in this embodiment includes the mode field distribution range of the output waveguide, and the size of the photosensitive area is less than or equal to the size threshold, which can reduce the junction capacitance of the detector and enhance the mode field of the array waveguide chip.
  • the matching degree improves the coupling efficiency; the coupling tolerance is increased, which can realize the installation without precise alignment and reduce the installation difficulty.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

一种基于平面波导芯片的光接收引擎，属于光通信技术领域，基于平面波导芯片的光接收引擎包括：用于接收光纤发出的光信号的阵列波导芯片（1），阵列波导芯片（1）的输出波导具有多模波导结构，光线入射至阵列波导芯片（1）后经过输出波导输出；波长不同的光线对应输出波导的模场分布不同；与阵列波导芯片（1）相耦合的探测器（2），探测器（2）的感光区域基于输出波导的模场分布范围确定；以及与探测器（2）相连的放大器；可以解决现有的阵列波导芯片（1）和探测器（2）之间的耦合效率较低的问题；由于通过优化探测器（2）的感光区域，可以使得感光区域匹配波导芯片的光斑模场，提高耦合效率。

Description

基于平面波导芯片的光接收引擎
本申请要求了申请日为2019年8月29日，申请号为201910805981.X的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及一种基于平面波导芯片的光接收引擎，属于光通信技术领域。
背景技术
随着5G时代的来临，数据传输的需求呈现爆发式增长，光纤通信技术以其高带宽的特性一直以来都都到关注。光收发器件是光通信整体链路中重要的一环，功能上要实现光电信号的转换。
由于波分复用结构可以有效地利用光纤高带宽的特性，因此，可以使用波分复用器件将多路不同波长的光信号耦合至单根光纤。为了实现对具有波分复用结构的光纤中光线的耦合和解耦功能，通常使用阵列波导芯片实现对光纤中的光进行分光处理。
在光接收端，阵列波导芯片需要具有波长不敏感特性，即平顶透射谱。在典型的方式中，通过将阵列波导芯片的输出波导制作成多模波导结构来实现平顶透射谱。此时，当波长变化时，阵列波导芯片输出波导的模场分布对应变化。
而具有多模波导结构的阵列波导芯片无法保持出射端单一的模场特性，这就使得阵列波导芯片和探测器之间的耦合变得困难，耦合效率较低。
发明内容
本申请提供了一种基于平面波导芯片的光接收引擎，可以解决现有的阵列波导芯片和探测器之间的耦合效率较低的问题。本申请提供如下技术方案：
基于平面波导芯片的光接收引擎，包括：
用于接收光纤发出的光信号的阵列波导芯片，所述阵列波导芯片的输出波导具有多模波导结构，光线入射至所述阵列波导芯片后经过所述输出波导输出；波长不同的光线对应所述输出波导的模场分布不同；
与所述阵列波导芯片相耦合的探测器，所述探测器的感光区域基于所述输出波导的模场分布范围确定；以及，
与所述探测器相连的放大器。
可选地，所述阵列波导芯片的出光面的法线方向指向所述探测器的感光区域。
可选地，所述阵列波导芯片形成有全反射面，所述全反射面用于将所述阵列波导芯片中传输的光全反射至所述阵列波导芯片的上表面出射；所述探测器的感光区域的中心与所述上表面输出光场中心重合。
可选地，所述阵列波导芯片通过支撑件支撑，以使所述探测器与所述阵列波导芯片的上表面用于出射光线的区域之间相隔预设距离。
可选地，所述探测器的感光区域包括所述输出波导的模场分布范围，且所述感光区域的尺寸小于或等于尺寸阈值。
可选地，所述模场分布范围的形状为矩形，相应地，所述探测器的感光区域为矩形，且所述感光区域的矩形的宽度与高度之比等于所述模场分布范围的矩形的宽度与高度之比。
可选地，所述模场分布范围的形状为椭圆形，相应地，所述探测器的感光区域为椭圆形，且所述感光区域的椭圆形的长轴与短轴之比等于所述模场分布范围的椭圆形的长轴与短轴之比。
可选地，所述探测器通过金线键合连接至所述放大器。
可选地，所述阵列波导芯片包括芯层和包裹在所述芯层周围的包层，所述芯层的宽度与高度之比的范围为[3，5]；所述芯层的折射率与所述包层的折射率之差的范围为[0.75％，2.5％]。
可选地，所述放大器为跨阻放大器。
本申请的有益效果在于：通过设置用于接收光纤发出的光信号的阵列波导芯片，阵列波导芯片的输出波导具有多模波导结构，光线入射至阵列波导芯片后经过输出波导输出；波长不同的光线对应输出波导的模场分布不同；与阵列波导芯片相耦合的探测器，探测器的感光区域基于输出波导的模场分布范围确 定；以及与探测器相连的放大器；可以解决现有的阵列波导芯片和探测器之间的耦合效率较低的问题；由于通过优化探测器的感光区域，可以使得感光区域匹配波导芯片的光斑模场，提高耦合效率。
上述说明仅是本申请技术方案的概述，为了能够更清楚了解本申请的技术手段，并可依照说明书的内容予以实施，以下以本申请的较佳实施例并配合附图详细说明如后。
附图说明
图1和图2是本申请一个实施例提供的基于平面波导芯片的光接收引擎的结构示意图；
图3是本申请一个实施例提供的阵列波导芯片的截面示意图；
图4是本申请一个实施例提供的探测器的感光区域的示意图；
图5是本申请另一个实施例提供的探测器的感光区域的示意图。
具体实施方式
下面结合附图和实施例，对本申请的具体实施方式作进一步详细描述。以下实施例用于说明本申请，但不用来限制本申请的范围。
图1和图2是本申请一个实施例提供的基于平面波导芯片的光接收引擎的结构示意图，如图所示，该光接收引擎至少包括：
用于接收光纤发出的光信号的阵列波导芯片1，阵列波导芯片1的输出波导具有多模波导结构，光线入射至阵列波导芯片1后经过输出波导输出；波长不同的光线对应输出波导的模场分布不同；
与阵列波导芯片1相耦合的探测器2，探测器2的感光区域基于输出波导的模场分布范围确定；以及，
与探测器2相连的放大器3。
可选地，探测器2的感光区域基于输出波导的模场分布中的峰值位置的变化范围确定。
参考图3所示的阵列波导芯片1的截面图，阵列波导芯片1包括芯层11和包裹在芯层11周围的包层12。可选地，为了保证阵列波导芯片1的光传输质量和传输效率，芯层11为矩形，且矩形的宽度与高度之比的范围为[3，5]；芯层11的折射率与包层12的折射率之差的范围为[0.75％，2.5％]。
可选地，阵列波导芯片1与探测器2耦合的方式包括但不限于以下几种：
第一种(参考图1)：阵列波导芯片1的出光面的法线方向指向探测器2的感光区域。可选地，探测器2直接固定在阵列波导芯片1的出光面上；或者，探测器2与阵列波导芯片1的出光面之间间隔有空气。
第二种(参考图2)：阵列波导芯片1形成有全反射面13，全反射面13用于将阵列波导芯片1中传输的光全反射至阵列波导芯片1的上表面14出射；探测器2的感光区域的中心与上表面14的输出光场中心重合。参考图2，阵列波导芯片1内部的光信号(虚线箭头表示)在经过阵列波导芯片1的全反射面13，从上表面14出射，在阵列波导芯片1和空气层界面折射后，指向探测器2感光区域的中心。
可选地，由于全反射面13具有棱角，为了防止探测器2直接安装至上表面14上时可能与全反射面13产生接触造成损伤的问题，本实施例中，阵列波导芯片1通过支撑件4支撑，以使探测器2与阵列波导芯片的上表面14用于出射光线的区域之间相隔预设距离。
其中，全反射面13可以是对阵列波导芯片1的端面进行抛光形成的；或者，是通过设置在阵列波导芯片1的端面上的反光镜，本实施例不对全反射面13的设置方式作限定。
可选地，探测器2与放大器3相连的方式可以为通过金线键合连接。
可选地，放大器3可以为跨阻放大器(trans-impedance amplifier，TIA)，当然，也可以是其它类型的放大器，本实施例对此不作限定。
在本实施例中，探测器2的感光区域基于输出波导的模场分布范围确定的方式包括：探测器2的感光区域包括模场分布范围，且感光区域的尺寸小于或等于尺寸阈值。
可选地，探测器2的感光区域大于或等于输出波导的模场分布范围。
其中，尺寸阈值是根据探测器2的最大探测带宽确定的。由于探测器2的最大探测带宽固定，而探测器2的感光区域越大，对应的带宽越小，因此，本实施例中为了保证探测器2的最大探测带宽需求，探测器2的感光区域小于或等于尺寸阈值。
可选地，参考图4，输出波导的模场分布范围的形状为矩形，相应地，探测器的感光区域为矩形，且感光区域的矩形的宽度与高度之比等于模场分布范围的矩形的宽度与高度之比。比如：模场分布范围的矩形的宽度与高度之比为2:1，则感光区域的矩形的宽度与高度之比为2:1。此时，探测器2的感光区域可以探测到各个波长对应的输出波导的模场分布。
或者，参考图5，模场分布范围的形状为椭圆形，相应地，探测器的感光区域为椭圆形，且感光区域的椭圆形的长轴与短轴之比等于模场分布范围的椭圆形的长轴与短轴之比。比如：模场分布范围的椭圆形的长轴与短轴之比为2:1，则感光区域的椭圆形的长轴与短轴之比也为2:1。此时，探测器2的感光区域可以探测到各个波长对应的输出波导的模场分布。
本实施例中，探测器2的感光区域的尺寸基于输出波导的模场分布范围的尺寸确定，探测器2的感光区域的尺寸无需固定设置为尺寸阈值，既可以保证探测精度，在一些场景中还可以减小探测器2的感光区域的面积，增加探测器2的最大探测带宽。
当然，本实施例中提供的基于平面波导芯片的光接收引擎还可以具有其它组件，比如：具有电气功能和机械支撑功能的衬底等，本实施例在此不再一一列举。
综上所述，本实施例提供的基于平面波导芯片的光接收引擎，通过设置用于接收光纤发出的光信号的阵列波导芯片，阵列波导芯片的输出波导具有多模波导结构，光线入射至阵列波导芯片后经过输出波导输出；波长不同的光线对应输出波导的模场分布不同；与阵列波导芯片相耦合的探测器，探测器的感光区域基于输出波导的模场分布范围确定；以及与探测器相连的放大器；可以解 决现有的阵列波导芯片和探测器之间的耦合效率较低的问题；由于通过优化探测器的感光区域，可以使得感光区域匹配波导芯片的光斑模场，提高耦合效率。
另外，本实施例中探测器的感光区域包括输出波导的模场分布范围，且感光区域的尺寸小于或等于尺寸阈值，既可以减小探测器结电容，又可以增强与阵列波导芯片模场的匹配程度，提高耦合效率；增加耦合容差，可以实现无需精确对准安装，降低安装难度。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种基于平面波导芯片的光接收引擎，其特征在于，所述光接收引擎包括：
    用于接收光纤发出的光信号的阵列波导芯片，所述阵列波导芯片的输出波导具有多模波导结构，光线入射至所述阵列波导芯片后经过所述输出波导输出；波长不同的光线对应所述输出波导的模场分布不同；
    与所述阵列波导芯片相耦合的探测器，所述探测器的感光区域基于所述输出波导的模场分布范围确定；以及，
    与所述探测器相连的放大器。
  2. 根据权利要求1所述的光接收引擎，其特征在于，所述阵列波导芯片的出光面的法线方向指向所述探测器的感光区域。
  3. 根据权利要求1所述的光接收引擎，其特征在于，所述阵列波导芯片形成有全反射面，所述全反射面用于将所述阵列波导芯片中传输的光全反射至所述阵列波导芯片的上表面出射；所述探测器的感光区域的中心与所述上表面输出光场中心重合。
  4. 根据权利要求3所述的光接收引擎，其特征在于，所述阵列波导芯片通过支撑件支撑，以使所述探测器与所述阵列波导芯片的上表面用于出射光线的区域之间相隔预设距离。
  5. 根据权利要求1至4任一所述的光接收引擎，其特征在于，所述探测器的感光区域包括所述输出波导的模场分布范围，且所述感光区域的尺寸小于或等于尺寸阈值。
  6. 根据权利要求5所述的光接收引擎，其特征在于，所述模场分布范围的形状为矩形，相应地，所述探测器的感光区域为矩形，且所述感光区域的矩形的宽度与高度之比等于所述模场分布范围的矩形的宽度与高度之比。
  7. 根据权利要求5所述的光接收引擎，其特征在于，所述模场分布范围的形状为椭圆形，相应地，所述探测器的感光区域为椭圆形，且所述感光区域的椭圆形的长轴与短轴之比等于所述模场分布范围的椭圆形的长轴与短轴之比。
  8. 根据权利要求1至4任一所述的光接收引擎，其特征在于，所述探测器通过金线键合连接至所述放大器。
  9. 根据权利要求1至4任一所述的光接收引擎，其特征在于，所述阵列波导芯片包括芯层和包裹在所述芯层周围的包层，所述芯层的宽度与高度之比的范围为[3，5]；所述芯层的折射率与所述包层的折射率之差的范围为[0.75％，2.5％]。
  10. 根据权利要求1至4任一所述的光接收引擎，其特征在于，所述放大器为跨阻放大器。
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