WO2021036009A1 - 一种无热阵列波导光栅 - Google Patents

一种无热阵列波导光栅 Download PDF

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WO2021036009A1
WO2021036009A1 PCT/CN2019/119100 CN2019119100W WO2021036009A1 WO 2021036009 A1 WO2021036009 A1 WO 2021036009A1 CN 2019119100 W CN2019119100 W CN 2019119100W WO 2021036009 A1 WO2021036009 A1 WO 2021036009A1
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waveguide
athermal
arrayed waveguide
refractive index
core layer
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PCT/CN2019/119100
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English (en)
French (fr)
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陈亦凡
郑睿
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苏州易锐光电科技有限公司
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Priority to US17/632,629 priority Critical patent/US11796736B2/en
Publication of WO2021036009A1 publication Critical patent/WO2021036009A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence
    • G02B6/12028—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence based on a combination of materials having a different refractive index temperature dependence, i.e. the materials are used for transmitting light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12026—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by means for reducing the temperature dependence
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the arrayed waveguides, e.g. comprising a filled groove in the array section
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12016—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the input or output waveguides, e.g. tapered waveguide ends, coupled together pairs of output waveguides
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1223—Basic optical elements, e.g. light-guiding paths high refractive index type, i.e. high-contrast waveguides

Definitions

  • the invention relates to a planar optical waveguide device, which belongs to an athermal array waveguide grating.
  • Arrayed waveguide grating is a kind of angular dispersion type passive device. It is based on planar optical waveguide technology. It was first proposed by Smit in the late 1980s. Later, it attracted the attention of many research institutions such as Bell Research Institute and NTT. With the development of optical waveguide technology, corresponding products are gradually commercialized. Compared with other wavelength division multiplexing devices, arrayed waveguide gratings have the advantages of flexible design, low insertion loss, good filtering, long-term stability, and easy fiber coupling. In addition, arrayed waveguide gratings are relatively easy to combine with active devices such as optical amplifiers and semiconductor lasers to achieve monolithic integration, which is a research hotspot today.
  • n eff is the effective refractive index of the waveguide
  • ⁇ L is the geometric length difference between adjacent waveguides
  • m is the diffraction order, which determines the dispersion capability of the grating.
  • n eff and ⁇ L can be described by temperature-dependent functions.
  • the change of the center wavelength of the device with temperature can be obtained by deriving the temperature from the above formula, and the final expression is as follows:
  • ⁇ sub is the linear expansion coefficient of the substrate material of the arrayed waveguide grating.
  • the traditional technology is to attach a temperature control device, such as a heater or an electrocooler, to stabilize the working temperature of the AWG.
  • a temperature control device such as a heater or an electrocooler
  • This requires additional power input, and the use of active temperature control is limited in a working environment with a large temperature difference.
  • Conventional athermal technology needs to introduce additional mechanical structure to the grating to realize the wavelength-temperature drift compensation function. This technology itself requires more complicated structure design and process methods.
  • the purpose of the present invention is to provide an athermal arrayed waveguide grating with a waveguide structure with negative temperature characteristics, which utilizes specially designed negative temperature change characteristics to realize the athermal working mode of the device
  • the present invention provides the following technical solutions:
  • An athermal arrayed waveguide grating comprising a silicon-based substrate; and the one arranged on the silicon-based substrate:
  • At least one input waveguide for inputting optical signals
  • the first free transmission area formed by the first slab waveguide is coupled with the output end of the input waveguide;
  • the athermal array waveguide is coupled with the output end of the first free transmission zone
  • the second free transmission area formed by the second slab waveguide is coupled with the output end of the waveguide array
  • At least one output waveguide for outputting optical signals, coupled to the output end of the second free transmission zone;
  • the athermal array waveguide includes a cladding layer and a waveguide core layer, the core layer is arranged in the cladding layer, and the refractive index of the core layer is higher than that of the cladding layer;
  • the waveguide core layer includes a multilayer structure periodically arranged, and the multilayer structure includes: a double-layer silicon dioxide material and a negative temperature coefficient material arranged between the double-layer silicon dioxide material; the negative temperature coefficient material is used to influence the silicon After the base substrate is heated, the dimensional deformation is compensated to reduce the temperature drift coefficient of the athermal arrayed waveguide grating.
  • the negative temperature coefficient material is titanium dioxide.
  • the thickness of the silicon dioxide material is 0.5-1 ⁇ m, and the thickness of the titanium dioxide material is 0.05-0.1 ⁇ m.
  • the effective refractive index of the multilayer structure is 1.5-1.6.
  • the effective refractive index temperature coefficient of the multilayer structure is -2e-6 to -4e-6/k.
  • the thickness of the negative temperature coefficient material is related to the optimal effective refractive index of the waveguide core layer.
  • the thickness of the negative temperature coefficient material is related to the best effective refractive index temperature coefficient of the waveguide core layer.
  • the technical scheme of the present invention overcomes the problem of the complex structure of the athermal arrayed waveguide grating design, does not require additional structural design and assembly processes, simplifies the athermal arrayed waveguide grating structure, and introduces negative temperature coefficient materials into the core layer structure , So that the grating itself has athermal characteristics, and ultimately ensure that the temperature drift coefficient of the grating meets the process requirements, so as to achieve athermal working conditions.
  • FIG. 1 is a schematic diagram of the structure of the core layer of the athermal arrayed waveguide according to the first embodiment, in which the 10-layer structure, the 11-silica material, the 12-negative temperature coefficient material, and the 30-silica cladding layer.
  • FIG. 2 is a schematic diagram of the structure of the athermal arrayed waveguide grating of the second embodiment, where 101-input waveguide, 102-output waveguide, 103-first free transmission area, 104-second free transmission area, 105-athermal arrayed waveguide, 140-silicon-based substrate.
  • an athermal arrayed waveguide including a silicon dioxide cladding layer 30 and a waveguide core layer disposed between the silicon dioxide cladding layer 30, the waveguide core layer includes a multilayer structure 10 periodically arranged, multiple layers
  • the structure 10 includes: a double-layer silicon dioxide material 11 and a negative temperature coefficient material 12 disposed between the double-layer silicon dioxide material 11; the negative temperature coefficient material 12 is used to heat the silicon-based substrate 140 (see FIG. 2) Then the dimensional deformation is compensated to reduce the temperature drift coefficient of the athermal arrayed waveguide grating.
  • the refractive index of the core layer is higher than the refractive index of the cladding layer.
  • the negative temperature coefficient material 12 is titanium dioxide.
  • the thickness of the silicon dioxide material 11 is 0.5-1 ⁇ m, and the thickness of the titanium dioxide material 12 is 0.05-0.1 ⁇ m.
  • the thickness of the negative temperature coefficient material 12 is related to the best effective refractive index and the best refractive index temperature coefficient of the waveguide core layer.
  • the thickness of the silicon dioxide material 11 is 1 ⁇ m
  • the thickness of the titanium dioxide waveguide 12 is 0.1 ⁇ m
  • the thickness of the multilayer structure 10 is 4.2 ⁇ m
  • the effective refractive index of the silicon dioxide material 11 is 1.476, and its effective refractive index temperature
  • the coefficient is 7.6e-6/k
  • the effective refractive index of the titanium dioxide waveguide 12 is 2.614, and its effective refractive index temperature coefficient is -1.2e-4/k
  • the effective refractive index of the multilayer structure 10 is 1.5795, and its effective refractive index
  • the temperature coefficient is -4e-6/k.
  • the effective refractive index of the multilayer structure 10 is 1.5-1.6.
  • the best effective refractive index temperature coefficient of the waveguide core layer is -2e-6 to -4e-6/K.
  • FIG. 1 shows a two-period multilayer structure 10, but the number and thickness of the multilayer structure 10 in the present invention are not limited to this.
  • the present invention also provides an athermal arrayed waveguide grating device, including a silicon-based substrate 140, and a silicon-based substrate 140:
  • the first free transmission area 103 formed by the first slab waveguide is coupled with the output end of the input waveguide 101;
  • the athermal array waveguide 105 prepared in the first embodiment of the present invention is coupled with the output end of the first free transmission area 103;
  • the second free transmission area 104 formed by the second slab waveguide is coupled with the output end of the waveguide array 105;
  • At least one output waveguide 102 for outputting optical signals is coupled to the output end of the second free transmission area 104.
  • the temperature drift coefficient of the center wavelength is calculated to be -0.0014nm/deg, while the silicon-based silicon dioxide structure of the arrayed waveguide grating has a center wavelength drift coefficient of 0.012nm/deg after comprehensive calculation. In comparison, it is reduced by an order of magnitude.
  • the present invention makes the waveguide itself have negative temperature characteristics, thereby offsetting the influence of the thermal expansion coefficient of the silicon-based material in the grating device, greatly reducing the overall temperature drift coefficient of the arrayed waveguide grating device, and improving the performance of the device.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

一种无热阵列波导光栅，包括硅基衬底（140）和设置于硅基衬底（140）上的无热阵列波导（105），无热阵列波导（105）包括包层（30）与波导芯层，波导芯层设于包层（30）中且折射率高于包层（30）的折射率；波导芯层包括周期性设置的多层结构（10），多层结构（10）包括：双层二氧化硅材料（11）以及设置于双层二氧化硅材料（11）之间的负温度系数材料（12）；负温度系数材料（12）用于对硅基衬底（140）受热后尺寸形变进行补偿，以减小该无热阵列波导光栅的温漂系数。从而简化了无热型阵列波导光栅的结构，使波导结构最终的折射率温度系数是负数，最终保证光栅的温漂系数满足需求，实现无热型工作条件。

Description

一种无热阵列波导光栅
本申请要求了申请日为2019年8月30日，申请号为201910812393.9的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及平面光波导器件，属于一种无热阵列波导光栅。
背景技术
阵列波导光栅是一种角色散型无源器件，它基于平面光波导技术，最初由Smit在上世纪80年代末提出，之后便受到Bell研究机构和NTT等多家研究机构的关注，随着平面光波导技术的发展，相应的产品也逐步实现商业化。与其它波分复用器件相比，阵列波导光栅具有设计灵活、插入损耗低、滤波性好、长期稳定、易于光纤耦合等优点。此外阵列波导光栅还比较容易与光放大器、半导体激光器等有源器件结合，实现单片集成，是当今的研究热点。
阵列波导光栅的中心波长和环境温度之间存在关联特性，主要原理说明如下：
Figure PCTCN2019119100-appb-000001
上式是阵列波导光栅的中心波长表达式，其中n eff是波导的有效折射率，ΔL是相邻波导的几何长度差，m是衍射级数，决定光栅色散能力。n eff和ΔL都可以由温度相关函数加以描述。器件的中心波长随温度的变化可以由上式对温度求导来得到，最终表达式如下所示：
Figure PCTCN2019119100-appb-000002
而其中
Figure PCTCN2019119100-appb-000003
α sub是阵列波导光栅衬底材料的线膨胀系数。硅基二氧化硅结构的阵列波导光栅，二氧化硅波导厚度远小于硅基衬底，温度变化导致的尺寸形变主要由衬底材料决定，α sub≈2.6x10 -6,常规二氧化硅波导，
Figure PCTCN2019119100-appb-000004
n eff＝1.456,综合 计算后中心波长温漂系数在0.012nm/deg。
为了让阵列波导光栅中心波长在不同环境温度下保持不变，减小其中心波长的温漂系数，传统技术是附接温度控制装置，如加热器或者电致制冷器来稳定AWG的工作温度，这就需要提供额外的电力输入，并且在具有较大温差的工作环境中，主动温控的使用受到限制。常规的无热技术需要对光栅引入额外机械结构来实现波长-温度漂移补偿功能，这种技术本身要求比较复杂的结构设计和工艺方法。
因此，针对上述问题，有必要提供一种结构简单的无热阵列波导光栅。
发明内容
为了解决上述技术问题，本发明的目的在于提供一种具有负温度特性波导结构的无热阵列波导光栅，利用特殊设计的负温度变化特性，来实现器件的无热工作模式
为达到上述目的，本发明提供如下技术方案：
一种无热阵列波导光栅，包括硅基衬底；和设置于硅基衬底之上的：
至少一个输入光信号的输入波导；
由第一平板波导构成的第一自由传输区，与输入波导的输出端耦合；
无热阵列波导，与第一自由传输区的输出端耦合；
由第二平板波导构成的第二自由传输区，与波导阵列的输出端耦合；
至少一个输出光信号的输出波导，与第二自由传输区的输出端耦合；
无热阵列波导包括包层与波导芯层，该芯层设于包层之中，并且其折射率高于包层的折射率；
波导芯层包括周期性设置的多层结构，多层结构包括：双层二氧化硅材料以及设置于双层二氧化硅材料之间的负温度系数材料；负温度系数材料用于对所述硅基衬底受热后尺寸形变进行补偿，以减小该无热阵列波导光栅的温漂系数。
进一步地，负温度系数材料为二氧化钛。
进一步地，多层结构中，二氧化硅材料的厚度为0.5～1μm，二氧化钛材料的厚度为0.05-0.1μm。
进一步地，多层结构的有效折射率为1.5-1.6。
进一步地，多层结构的有效折射率温度系数为-2e-6～-4e-6/k。
进一步地，负温度系数材料的厚度与波导芯层的最佳有效折射率有关。
进一步地，负温度系数材料的厚度与波导芯层的最佳有效折射率温度系数有关。
本发明的有益效果在于：
本发明的技术方案克服了无热型阵列波导光栅设计结构复杂的问题，不需要附加额外的结构设计和装配工艺，简化了无热型阵列波导光栅结构，在芯层结构中引入负温度系数材料，使光栅本身具有无热特性，最终保证该光栅的温漂系数满足工艺需求，从而实现无热型工作条件。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，并可依照说明书的内容予以实施，以下以本发明的较佳实施例并配合附图详细说明如后。
附图说明
图1为实施例一的无热阵列波导芯层的结构示意图，其中10-多层结构，11-二氧化硅材料，12-负温度系数材料，30-二氧化硅包层。
图2为实施例二的无热阵列波导光栅的结构示意图，其中101-输入波导，102-输出波导，103-第一自由传输区，104-第二自由传输区，105-无热阵列波导，140-硅基衬底。
具体实施方式
下面结合附图和实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
实施例一
请参阅图1，一种无热阵列波导，包括二氧化硅包层30和设置于二氧化硅包层30之间的波导芯层，波导芯层包括周期性设置的多层结构10，多层结构 10包括：双层二氧化硅材料11以及设置于双层二氧化硅材料11之间的负温度系数材料12；负温度系数材料12用于对硅基衬底140(请参阅图2)受热后尺寸形变进行补偿，以减小该无热阵列波导光栅的温漂系数。
在上述实施例中，芯层的折射率高于包层的折射率。
在上述实施例中，负温度系数材料12为二氧化钛。
在上述实施例中，多层结构中，二氧化硅材料11的厚度为0.5～1μm，二氧化钛材料12的厚度为0.05-0.1μm。负温度系数材料12的厚度与波导芯层的最佳有效折射率和最佳折射率温度系数有关。例如，当二氧化硅材料11的厚度为1μm，二氧化钛波导12的厚度为0.1μm，多层结构10的厚度为4.2μm时；二氧化硅材料11的有效折射率为1.476，其有效折射率温度系数为7.6e-6/k；二氧化钛波导12的有效折射率为2.614，其有效折射率温度系数为-1.2e-4/k；得到多层结构10的有效折射率为1.5795，其有效折射率温度系数为-4e-6/k。
在其他实施例中，多层结构10的有效折射率为1.5-1.6。
在其他实施例中，波导芯层的最佳有效折射率温度系数为-2e-6～-4e-6/K。
图1所示的实施例中给出了两个周期的多层结构10，但本发明中的多层结构10的数量和厚度并不以此为限。
实施例二
请参阅图2，本发明还提供了一种无热阵列波导光栅器件，包括硅基衬底140，和设置于硅基衬底140之上的：
一个输入光信号的输入波导101；
由第一平板波导构成的第一自由传输区103，与输入波导101的输出端耦合；
本发明实施例一制备的无热阵列波导105，与第一自由传输区103的输出端耦合；
由第二平板波导构成的第二自由传输区104，与波导阵列105的输出端耦合；
至少一个输出光信号的输出波导102，与第二自由传输区104的输出端耦合。
基于上述波导结构的光栅器件，计算得到其中心波长温漂系数为-0.0014nm/deg，而硅基二氧化硅结构的阵列波导光栅，综合计算后中心波长温 漂系数在0.012nm/deg，相较而言减少了一个数量级。
本发明通过改进波导的结构设计，使波导本身具有负温度特性，从而抵消光栅器件中硅基材料热膨胀系数造成的影响，大幅减小阵列波导光栅器件整体的温漂系数，提高了器件性能。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (7)

  1. 一种无热阵列波导光栅，包括硅基衬底；和设置于所述硅基衬底之上的：
    至少一个输入光信号的输入波导；
    由第一平板波导构成的第一自由传输区，与所述输入波导的输出端耦合；
    无热阵列波导，与所述第一自由传输区的输出端耦合；
    由第二平板波导构成的第二自由传输区，与所述波导阵列的输出端耦合；
    至少一个输出光信号的输出波导，与所述第二自由传输区的输出端耦合；
    所述无热阵列波导包括包层与波导芯层，所述芯层设于所述包层之中，并且其折射率高于所述包层的折射率；
    所述波导芯层包括周期性设置的多层结构，所述多层结构包括：双层二氧化硅材料以及设置于所述双层二氧化硅材料之间的负温度系数材料；所述负温度系数材料用于对所述硅基衬底受热后尺寸形变进行补偿，以减小该无热阵列波导光栅的温漂系数。
  2. 根据权利要求1所述的无热阵列波导光栅，其特征在于，所述负温度系数材料为二氧化钛。
  3. 根据权利要求1所述的无热阵列波导光栅，其特征在于，所述多层结构中，二氧化硅材料的厚度为0.5～1μm，二氧化钛材料的厚度为0.05-0.1μm。
  4. 根据权利要求1所述的无热阵列波导光栅，其特征在于，所述多层结构的有效折射率为1.5-1.6。
  5. 根据权利要求1所述的无热阵列波导光栅，其特征在于，所述多层结构的有效折射率温度系数为-2e-6～-4e-6/k。
  6. 根据权利要求1所述的无热阵列波导光栅，其特征在于，所述负温度系数材料的厚度与所述波导芯层的最佳有效折射率有关。
  7. 根据权利要求1所述的无热阵列波导光栅，其特征在于，所述负温度系数材料的厚度与所述波导芯层的最佳有效折射率温度系数有关。
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