WO2021033786A1 - Film hautement diélectrique et son procédé de fabrication - Google Patents

Film hautement diélectrique et son procédé de fabrication Download PDF

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Publication number
WO2021033786A1
WO2021033786A1 PCT/KR2019/010452 KR2019010452W WO2021033786A1 WO 2021033786 A1 WO2021033786 A1 WO 2021033786A1 KR 2019010452 W KR2019010452 W KR 2019010452W WO 2021033786 A1 WO2021033786 A1 WO 2021033786A1
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WO
WIPO (PCT)
Prior art keywords
foil
dielectric film
metal compound
metal
foil structure
Prior art date
Application number
PCT/KR2019/010452
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English (en)
Korean (ko)
Inventor
민의홍
조상호
구자민
Original Assignee
주식회사 솔루에타
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 솔루에타 filed Critical 주식회사 솔루에타
Priority to PCT/KR2019/010452 priority Critical patent/WO2021033786A1/fr
Publication of WO2021033786A1 publication Critical patent/WO2021033786A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/20—Dielectrics using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06

Definitions

  • the present invention relates to a high dielectric film and a method of manufacturing the same, and more specifically, to a high dielectric film and a method of manufacturing the dielectric film, in which a dielectric film is disposed between two foil structures.
  • a capacitor is an element of an electric circuit made for the purpose of accumulating electric charges.
  • the basic structure is composed of a dielectric and an electrode sandwiched therebetween, and an electrode withdrawal terminal is attached thereto and the whole is placed in a suitable frame Filling or resin molding.
  • the value indicating how well electric charges can be accumulated is called the capacitance of the capacitor.
  • the electrostatic capacity of the capacitor is proportional to the width of the electrode and the relative dielectric constant of the dielectric inserted between the electrodes, and is inversely proportional to the distance between the electrodes. Therefore, in order to increase the electrostatic capacity per unit volume, methods such as selecting a material with a high dielectric constant, using a thinner dielectric, and increasing the electrode area through structural studies (laminated structure, irregularity of the electrode surface, etc.) are used. have
  • dielectric materials are used for capacitors that are being developed and put into practical use as parts for electric and electronic devices, but they are generally manufactured in a structure that takes advantage of the characteristics of the materials used.
  • a strip-shaped dielectric and electrode foil are stacked on top of each other like a paper capacitor.
  • a variable capacitor with a variable capacitance structure which allows the static capacitance to be artificially changed continuously over a certain range.
  • One technical problem to be solved by the present invention is to provide a high dielectric film having improved electrical properties and a method of manufacturing the same.
  • Another technical problem to be solved by the present invention is to provide a high dielectric film having improved physical properties and a method of manufacturing the same.
  • Another technical problem to be solved by the present invention is to provide a high dielectric film with a simplified process process and a method for manufacturing the same.
  • the technical problem to be solved by the present invention is not limited to the above.
  • the present invention provides a method of manufacturing a high dielectric film.
  • a resin source material including a first metal compound particle and a second metal compound particle different from the first metal compound particle is applied onto a first metal foil.
  • Forming a first foil structure coated with a first resin layer including the first and second metal compound particles on the first metal foil, and applying the resin source material to the second metal foil Providing a step of forming a second foil structure coated with a second resin layer including the first and second metal compound particles on the second metal foil, the first resin layer, and the second resin layer Disposing the first foil structure and the second foil structure to face each other, and disposing a dielectric film containing a polymer between the first foil structure and the second foil structure spaced apart from each other, and It may include compressing the first foil structure, the second foil structure, and the dielectric film.
  • the step of forming the first foil structure and the step of forming the second foil structure each include preparing the resin source material, wherein the preparing of the resin source material includes the first metal compound particles , Preparing a preliminary source by mixing the second metal compound particles, a solvent, and a surfactant, and mixing the preliminary source, a binder, and an antifoaming agent.
  • the first metal compound particle may include BaTiO 3
  • the second metal compound particle may include BaZrO 3.
  • both the first metal foil and the second metal foil may contain copper (Cu).
  • the polymer may include polyimide.
  • the present invention provides a high dielectric film.
  • the high-k film is a dielectric film containing a polymer, disposed on an upper surface of the dielectric film, and comprising a first metal compound particle and a second metal compound particle on the first metal foil.
  • a first foil structure coated with a resin layer, and a second resin layer disposed on the lower surface of the dielectric film and including the first metal compound particles and the second metal compound particles are coated on the second metal foil.
  • the second foil structure may include, wherein the first resin layer is in contact with an upper surface of the dielectric film, and the second resin layer is in contact with a lower surface of the dielectric film.
  • the first metal foil and the second metal foil may contain the same metal, and the first metal compound particles and the second metal compound particles may contain different metal compounds.
  • a resin source material including a first metal compound particle and a second metal compound particle different from the first metal compound particle is applied onto a first metal foil.
  • Forming a first foil structure coated with a first resin layer including the first and second metal compound particles on the first metal foil, and applying the resin source material to the second metal foil Providing a step of forming a second foil structure coated with a second resin layer including the first and second metal compound particles on the second metal foil, the first resin layer, and the second resin layer Disposing the first foil structure and the second foil structure to face each other, disposing a dielectric film containing a polymer between the first foil structure and the second foil structure spaced apart from each other, And compressing the first foil structure, the second foil structure, and the dielectric film. Accordingly, a high dielectric film having improved electrical properties and physical properties may be provided.
  • a method of manufacturing a high dielectric film with a simplified manufacturing process may be provided.
  • FIG. 1 is a flowchart illustrating a method of manufacturing a high dielectric film according to an embodiment of the present invention.
  • FIG. 2 is a flow chart specifically illustrating a step of forming a first foil structure in a method of manufacturing a high dielectric film according to an exemplary embodiment of the present invention.
  • FIG. 3 is a flowchart specifically illustrating a step of forming a second foil structure in a method of manufacturing a high dielectric film according to an exemplary embodiment of the present invention.
  • 4 to 6 are diagrams illustrating a manufacturing process of a high dielectric film according to an embodiment of the present invention.
  • FIG. 7 is a diagram illustrating a specific application example of a high dielectric film according to an embodiment of the present invention.
  • FIG. 10 is a graph comparing the surface properties of a foil structure manufactured according to the concentration of a surfactant and an antifoaming agent.
  • 11 is a photograph comparing resin source materials prepared according to the type of solvent.
  • first, second, and third are used to describe various components, but these components should not be limited by these terms. Accordingly, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment.
  • FIG. 1 is a flow chart illustrating a method of manufacturing a high dielectric film according to an embodiment of the present invention
  • FIG. 2 is a detailed description of a step of forming a first foil structure in a method of manufacturing a high dielectric film according to an embodiment of the present invention
  • 3 is a flowchart specifically illustrating a step of forming a second foil structure in a method of manufacturing a high dielectric film according to an embodiment of the present invention
  • FIGS. 4 to 6 are a high dielectric film according to an embodiment of the present invention.
  • FIG. 7 is a diagram illustrating a specific application example of a high dielectric film according to an embodiment of the present invention.
  • the first resin layer 120 may be coated on the first metal foil 110. Accordingly, the first foil structure 100 may be formed (S100). According to an embodiment, the forming of the first foil structure 100 may include preparing a preliminary source (S110), preparing a resin source material (S120), and replacing the resin source material with the first metal foil. It may include a step (S130) provided on (110). Hereinafter, each step will be described in detail.
  • the first metal compound particles, the second metal compound particles, a surfactant, and a solvent may be mixed. Accordingly, the preliminary source can be prepared. According to an embodiment, the first metal compound particle and the second metal compound particle may be different from each other.
  • the first metal compound particles may be BaTiO 3.
  • the second metal compound particle may be BaZrO 3.
  • BaTiO 3 is a high dielectric material and is generally used in high dielectric films.
  • problems such as a narrow operating temperature range, high high temperature dependence, and low reliability may occur.
  • BaTiO 3 and BaZrO 3 may be used together. That is, when BaTiO 3 and BaZrO 3 are used together in a high-k film, not only the above-described problems can be solved, but also high dielectric properties can be exhibited.
  • the surfactant may improve dispersibility of the first metal compound particles and the second metal compound particles. That is, the surfactant may be used as a dispersant.
  • the surfactant may be an ammonium polycarboxylic acid salt.
  • the content of the surfactant may be controlled.
  • the surfactant there is an advantage of improving the dispersibility of the first metal compound particles and the second metal compound particles, but when an excessive amount is used, a non-drying problem and a discoloration problem occurring during curing may occur. I can.
  • the solvent may be Terpineol.
  • the surfactant By the surfactant, the first metal compound particles and the second metal compound particles may be uniformly mixed in the solvent. Unlike the above, when MEK, Toluene, etc. are used as the solvent, a sedimentation phenomenon occurs compared to the case where Terpineol is used, so that the first metal compound particles and the second metal compound particles are not uniformly mixed. There may be a problem that cannot be done.
  • the surfactant may be mixed.
  • a material in which the first metal compound particles and the second metal compound particles are mixed may have a concentration of 60 to 80 wt% compared to the resin source material.
  • the surfactant may have a concentration of 0.5 to 1.5 wt% relative to the resin source material.
  • the first metal compound particles, the second metal compound particles, the surfactant, and the solvent may be mixed through a ball mill process.
  • the ball mill process may be performed for 2 hours at a rotation speed of 200 to 300 RPM through a Zr Bead having a size of 0.3 mm.
  • the preliminary source, the binder, and the antifoaming agent may be mixed.
  • the resin source material may be prepared.
  • the binder may be thermosetting epoxy.
  • the antifoaming agent may be a polyether having a concentration of 0.5 to 1.5 wt% relative to the resin source material. Air bubbles generated in the process of mixing the preliminary source and the binder may be removed by the antifoaming agent.
  • the antifoaming agent and the surfactant may be used in the same concentration.
  • the antifoaming agent and the surfactant may be used in a concentration of 6 wt%.
  • the concentration of the surfactant and the antifoaming agent is increased, taking into account that the non-drying problem and decoloring problems occur during curing, the concentration of the antifoaming agent and the surfactant can be controlled to 6 wt%. And, accordingly, the resin source material of excellent quality can be manufactured.
  • the antifoaming agent may be mixed. That is, in the manufacturing process of the resin source material, the defoaming agent may be finally mixed. In this case, air bubbles generated by the surfactant and the binder can be easily removed by the antifoaming agent. In contrast, when a foil structure is manufactured through a resin source material prepared by changing the mixing order of the antifoaming agent, a problem of deteriorating the surface characteristics of the foil structure may occur.
  • the resin source material may be provided on the first metal foil 110.
  • the first metal foil 110 may include copper (Cu).
  • the first metal foil 110 may include aluminum (Al). That is, the first metal foil 110 may be a copper (Cu) foil or an aluminum (Al) foil.
  • the first metal foil 110 may have a thickness of 30 ⁇ m to 40 ⁇ m.
  • the resin source material may be coated on the first metal foil 110. Thereafter, the resin source material may be cured. Accordingly, the first resin layer 120 may be formed on the first metal foil 110. As a result, the first resin layer 120 may include the first metal compound particles and the second metal compound particles.
  • the resin source material may be coated to a thickness of 10 ⁇ m on the first metal foil 110 using a Comma coater.
  • the line speed of the Comma coater can be maintained at 11 m/min.
  • the resin source material coated on the first metal foil 110 may be first dried at a temperature of 60° C. for 5 minutes and then secondary dried at a temperature of 120° C. for 10 minutes.
  • the first metal foil 110 may be heat treated before the resin source material is coated. Specifically, the first metal foil 110 may be heat-treated at a temperature of 700° C. and in a hydrogen atmosphere. Alternatively, the first metal foil 110 may be heat-treated in a nitrogen or argon (Ar) atmosphere.
  • the coating efficiency of the resin source material may be improved.
  • carbon (C) existing on the surface of the first metal foil 110 may be removed. Accordingly, the coating efficiency of the resin source material may be improved.
  • CH 4 may be generated.
  • a second resin layer 220 may be coated on the second metal foil 210. Accordingly, the second foil structure 200 may be formed (S200). According to an embodiment, the forming of the second foil structure 200 includes preparing a preliminary source (S210), preparing a resin source material (S220), and adding the resin source material to the second metal foil. It may include a step (S230) provided on the (210). Hereinafter, each step will be described in detail.
  • the preliminary source and the resin source material described in the step of manufacturing the first foil structure (S100) may be prepared.
  • the resin source material may be provided on the second metal foil 210.
  • the second metal foil 210 may include copper (Cu). That is, the second metal foil 210 may be a copper (Cu) foil or an aluminum (Al) foil.
  • the second metal foil 210 may have a thickness of 30 ⁇ m to 40 ⁇ m.
  • the resin source material may be coated on the second metal foil 210. Thereafter, the resin source material may be cured. Accordingly, the second resin layer 220 may be formed on the second metal foil 210. As a result, the second resin layer 220 may include the first metal compound particles and the second metal compound particles.
  • the resin source material may be coated with a thickness of 10 ⁇ m on the second metal foil 210 using a Comma coater.
  • the line speed of the Comma coater can be maintained at 11 m/min.
  • the resin source material coated on the second metal foil 210 may be first dried at a temperature of 60° C. for 5 minutes and then secondary dried at a temperature of 120° C. for 10 minutes.
  • the features described in the manufacturing method of the first foil structure 100 may also be applied to the manufacturing method of the second foil structure 200.
  • the first foil structure 100 and the second foil structure 200 may be disposed to be spaced apart from each other. According to an embodiment, the first foil structure 100 and the second foil structure 200 may be disposed so that the first resin layer 120 and the second resin layer 220 face each other ( S300).
  • a dielectric film 300 may be disposed between the first foil structure 100 and the second foil structure 200 spaced apart from each other (S400).
  • the dielectric film 300 may include a polymer.
  • the polymer may include polyimide.
  • the dielectric film 300 may have a thickness of 6 ⁇ m to 8 ⁇ m.
  • the polymer may include PA, PET, PE, PEN, and the like.
  • the dielectric film 300 is formed of the first resin layer 120 and the second resin layer 220. ) Can be placed between.
  • the first foil structure 100, the second foil structure 200, and the dielectric film 300 may be compressed (S500). Accordingly, the high dielectric film 10 may be manufactured. According to an embodiment, the first foil structure 100, the second foil structure 200, and the dielectric film 300 may be compressed through a hot press process. In this case, the hot pressing process may be performed for 30 minutes at a temperature of 140 to 160 °C and a pressure of 150 to 200 kgf/cm 2.
  • the high dielectric film 10 is disposed on an upper surface of the dielectric film 300 and the dielectric film 300 including the polymer, and the first metal foil 110 It is disposed on the first foil structure 100 coated with the first resin layer 120 including the metal compound particles and the second metal compound particles, and the lower surface of the dielectric film 300, and the second Including the second foil structure 200 coated with the second resin layer 220 including the first metal compound particles and the second metal compound particles on a metal foil 210, the first number
  • the stratum 110 may be in contact with the upper surface of the dielectric film 300, and the second resin layer 210 may include in contact with the lower surface of the dielectric film 300. Accordingly, the high dielectric film 10 with improved electrical properties and physical properties may be provided.
  • the high dielectric film 10 may be used by being embedded in a substrate.
  • the high dielectric film 10 may be embedded in a printed circuit board (PBC) 20 on which the IC chip 30 is disposed.
  • the high dielectric film 10 may operate as a capacitor.
  • the printed circuit board in which the high-k film 10 is embedded may improve circuit performance.
  • BaTiO 3 powder, BaZrO 3 powder, polycarboxylic acid ammonium salt (surfactant), and Terpineol (solvent) were sequentially mixed to prepare a preliminary source material.
  • BaTiO 3 powder and BaZrO 3 powder were mixed at a dispersion ratio of 60 to 80 wt%, and the polycarboxylic acid ammonium salt was 0.5 to 1.5 wt% of Sannov 5468, and the mixing method was Ball mill (Bead Zr 0.3 mm) was mixed for 2 hours at 200-300 RPM.
  • thermosetting epoxy binder
  • defoaming agent 0.5 to 1.5 wt% Sannov 551
  • the resin source material according to the above-described embodiment, and rolled copper having a thickness of 35 ⁇ 5 ⁇ m are prepared. Thereafter, a resin source material was coated on the rolled copper at a speed of 11m/min through a Comma coater, and the primary drying was performed at a temperature of 60°C for 5 minutes, followed by secondary drying at a temperature of 120°C for 10 minutes. Was carried out to prepare a first foil structure.
  • the above-described first foil structure, second foil structure, and a PI film having a thickness of 7 ⁇ 1 ⁇ m were prepared. After arranging the resin coating layer of each foil structure to face each other with the PI film interposed, it was compressed for 30 minutes at a temperature of 140 to 160°C and a force of 150 to 200 kgf/cm 2 through hot press, and according to the above example A high dielectric film according to was prepared.
  • Resin source material according to the prepared in the method of manufacturing a resin source material according to the embodiment described above, BaTiO 3 powder, BaZrO 3 powder, Terpineol, a defoaming agent, a polycarboxylic acid ammonium salt, and Comparative Example 1 were mixed in the order of a thermosetting Epoxy Was prepared. Thereafter, the resin source material according to Comparative Example 1 was coated on the rolled copper to prepare a foil structure according to Comparative Example 1.
  • the resin source material according to Comparative Example 2 was prepared by the method of manufacturing a resin source material according to the above-described embodiment, but simultaneously mixing BaTiO 3 powder, BaZrO 3 powder, polycarboxylic acid ammonium salt, Terpineol, thermosetting epoxy, and antifoaming agent. Was prepared. Thereafter, the resin source material according to Comparative Example 2 was coated on the rolled copper to prepare a foil structure according to Comparative Example 1.
  • the resin source material according to Comparative Example 3 was prepared by the method of manufacturing a resin source material according to the above-described embodiment, but mixed in the order of BaTiO 3 powder, BaZrO 3 powder, polycarboxylic acid ammonium salt, Terpineol, antifoaming agent, and thermosetting epoxy. Was prepared. Thereafter, the resin source material according to Comparative Example 3 was coated on rolled copper to prepare a foil structure according to Comparative Example 3.
  • Comparative Example 4 Prepared by the method of preparing a resin source material according to the above-described embodiment, but after sequentially mixing BaTiO 3 powder, BaZrO 3 powder, polycarboxylic acid ammonium salt, and Terpineol, thermosetting epoxy and antifoaming agent were simultaneously mixed to obtain Comparative Example 4
  • the resin source material was prepared according to. Thereafter, a resin source material according to Comparative Example 4 was coated on rolled copper to prepare a foil structure according to Comparative Example 4.
  • a resin source material according to Comparative Example 5 was prepared by manufacturing the resin source material according to the above-described embodiment, but without using an ammonium polycarboxylic acid salt, and mixing the remaining materials. Thereafter, the resin source material according to Comparative Example 5 was coated on rolled copper to prepare a foil structure according to Comparative Example 5.
  • the surface of the foil structure according to the embodiment is photographed and shown.
  • the concentration of the surfactant and the antifoaming agent was controlled to 6 wt%.
  • (A) and (b) of FIG. 9 show states photographed at different magnifications.
  • FIG. 10 is a graph comparing the surface properties of a foil structure manufactured according to the concentration of a surfactant and an antifoaming agent.
  • a plurality of resin source materials according to the above embodiments are prepared, but the concentrations of the surfactant and the antifoam are different from each other, and a foil structure is manufactured through each of the prepared resin source materials. Surface properties were measured. The measured results are summarized in ⁇ Table 2> below.
  • 11 is a photograph comparing resin source materials prepared according to the type of solvent.
  • the prepared resin source material was photographed and shown for the case of using MEK (methyl ethyl ketone) as the solvent and the case of using Terpineol.
  • Figure 11 (a) shows a case where MEK is used
  • Figure 11 (b) shows a case where Terpineol is used.
  • FIG. 12(a) shows a low magnification photograph
  • FIG. 12(b) shows a high magnification photograph.
  • FIG. 15A shows a low magnification photograph
  • FIG. 12B shows a high magnification photograph.
  • FIG. 16A shows a low magnification photograph
  • FIG. 12B shows a high magnification photograph.
  • the high-k film and its manufacturing method according to an embodiment of the present invention may be used in various industrial fields such as a thin film capacitor inserted into a PCB substrate.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention concerne un film hautement diélectrique. Le film hautement diélectrique peut comprendre : un film diélectrique contenant un polymère ; une première structure de feuille, qui est disposée sur la surface supérieure du film diélectrique et dans laquelle une première couche de résine contenant des premières particules de composé métallique et des secondes particules de composé métallique est appliquée sur une première feuille métallique ; et une seconde structure de feuille, qui est disposée sur la surface inférieure du film diélectrique et dans laquelle une seconde couche de résine contenant les premières particules de composé métallique et les secondes particules de composé métallique est appliquée sur une seconde feuille métallique.
PCT/KR2019/010452 2019-08-16 2019-08-16 Film hautement diélectrique et son procédé de fabrication WO2021033786A1 (fr)

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PCT/KR2019/010452 WO2021033786A1 (fr) 2019-08-16 2019-08-16 Film hautement diélectrique et son procédé de fabrication

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Application Number Priority Date Filing Date Title
PCT/KR2019/010452 WO2021033786A1 (fr) 2019-08-16 2019-08-16 Film hautement diélectrique et son procédé de fabrication

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WO2021033786A1 true WO2021033786A1 (fr) 2021-02-25

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030034193A (ko) * 2001-07-30 2003-05-01 미쓰이 긴조꾸 고교 가부시키가이샤 커패시터층 형성용의 양면 동클래드적층판 및 그 제조방법
KR20040053574A (ko) * 2002-12-17 2004-06-24 한국과학기술원 내장형 커패시터용 다층 폴리머/세라믹 복합 유전체 필름
JP4192946B2 (ja) * 2003-03-20 2008-12-10 日立化成工業株式会社 コンデンサを内蔵した多層配線板用材料、多層配線板用基板および多層配線板とこれらの製造方法
KR20090035618A (ko) * 2006-07-27 2009-04-09 다이킨 고교 가부시키가이샤 코팅 조성물
KR20110096596A (ko) * 2008-12-22 2011-08-30 다이킨 고교 가부시키가이샤 필름 콘덴서용 고유전성 필름 형성 조성물

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030034193A (ko) * 2001-07-30 2003-05-01 미쓰이 긴조꾸 고교 가부시키가이샤 커패시터층 형성용의 양면 동클래드적층판 및 그 제조방법
KR20040053574A (ko) * 2002-12-17 2004-06-24 한국과학기술원 내장형 커패시터용 다층 폴리머/세라믹 복합 유전체 필름
JP4192946B2 (ja) * 2003-03-20 2008-12-10 日立化成工業株式会社 コンデンサを内蔵した多層配線板用材料、多層配線板用基板および多層配線板とこれらの製造方法
KR20090035618A (ko) * 2006-07-27 2009-04-09 다이킨 고교 가부시키가이샤 코팅 조성물
KR20110096596A (ko) * 2008-12-22 2011-08-30 다이킨 고교 가부시키가이샤 필름 콘덴서용 고유전성 필름 형성 조성물

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