WO2021033786A1 - High-dielectric film and manufacturing method therefor - Google Patents

Abstract

Provided is a high-dielectric film. The high-dielectric film may comprise: a dielectric film containing a polymer; a first foil structure, which is disposed on the top surface of the dielectric film and in which a first resin layer containing first metal compound particles and second metal compound particles is coated on a first metal foil; and a second foil structure, which is disposed on the bottom surface of the dielectric film and in which a second resin layer containing the first metal compound particles and the second metal compound particles is coated on a second metal foil.

Description

High dielectric film and its manufacturing method

The present invention relates to a high dielectric film and a method of manufacturing the same, and more specifically, to a high dielectric film and a method of manufacturing the dielectric film, in which a dielectric film is disposed between two foil structures.

A capacitor is an element of an electric circuit made for the purpose of accumulating electric charges. The basic structure is composed of a dielectric and an electrode sandwiched therebetween, and an electrode withdrawal terminal is attached thereto and the whole is placed in a suitable frame Filling or resin molding. The value indicating how well electric charges can be accumulated is called the capacitance of the capacitor.

The electrostatic capacity of the capacitor is proportional to the width of the electrode and the relative dielectric constant of the dielectric inserted between the electrodes, and is inversely proportional to the distance between the electrodes. Therefore, in order to increase the electrostatic capacity per unit volume, methods such as selecting a material with a high dielectric constant, using a thinner dielectric, and increasing the electrode area through structural studies (laminated structure, irregularity of the electrode surface, etc.) are used. have

When a DC voltage is applied to the capacitor, charge is almost instantaneously accumulated and supplied as a current from the power source according to the polarity of the voltage applied to each electrode and in proportion to the voltage and the electrostatic capacity. Therefore, transient current flows in the circuit, but normal current does not flow. On the other hand, when an AC voltage is applied to the capacitor, the instantaneous charging phenomenon that occurs when DC is applied changes according to the polarity change of the electrode, so that a current constantly flows through the electrode of the capacitor. Thus, the amount of charge entering and leaving the electrode in a unit time increases proportionally as the electrostatic capacity increases and the polarity conversion speed, that is, the frequency increases.

Various dielectric materials are used for capacitors that are being developed and put into practical use as parts for electric and electronic devices, but they are generally manufactured in a structure that takes advantage of the characteristics of the materials used. In terms of structure, a strip-shaped dielectric and electrode foil are stacked on top of each other like a paper capacitor. There are four types: plate-type capacitors, stacked capacitors in which dielectrics and electrodes are stacked alternately like mica capacitors, and electrolytic capacitors in which the capacity per unit volume is increased by chemically generating a dielectric film. In addition, there is a variable capacitor with a variable capacitance structure, which allows the static capacitance to be artificially changed continuously over a certain range.

However, as problems and limitations in such existing technologies are continuously discovered, various capacitor technologies for solving these problems are being researched and developed.

One technical problem to be solved by the present invention is to provide a high dielectric film having improved electrical properties and a method of manufacturing the same.

Another technical problem to be solved by the present invention is to provide a high dielectric film having improved physical properties and a method of manufacturing the same.

Another technical problem to be solved by the present invention is to provide a high dielectric film with a simplified process process and a method for manufacturing the same.

The technical problem to be solved by the present invention is not limited to the above.

In order to solve the above technical problems, the present invention provides a method of manufacturing a high dielectric film.

According to an embodiment, in the method of manufacturing the high dielectric film, a resin source material including a first metal compound particle and a second metal compound particle different from the first metal compound particle is applied onto a first metal foil. Forming a first foil structure coated with a first resin layer including the first and second metal compound particles on the first metal foil, and applying the resin source material to the second metal foil Providing a step of forming a second foil structure coated with a second resin layer including the first and second metal compound particles on the second metal foil, the first resin layer, and the second resin layer Disposing the first foil structure and the second foil structure to face each other, and disposing a dielectric film containing a polymer between the first foil structure and the second foil structure spaced apart from each other, and It may include compressing the first foil structure, the second foil structure, and the dielectric film.

According to an embodiment, the step of forming the first foil structure and the step of forming the second foil structure each include preparing the resin source material, wherein the preparing of the resin source material includes the first metal compound particles , Preparing a preliminary source by mixing the second metal compound particles, a solvent, and a surfactant, and mixing the preliminary source, a binder, and an antifoaming agent.

According to an embodiment, the first metal compound particle may _{include BaTiO 3} , and the second metal compound particle may include _{BaZrO 3.}

According to an embodiment, both the first metal foil and the second metal foil may contain copper (Cu).

According to an embodiment, the polymer may include polyimide.

In order to solve the above technical problems, the present invention provides a high dielectric film.

According to an embodiment, the high-k film is a dielectric film containing a polymer, disposed on an upper surface of the dielectric film, and comprising a first metal compound particle and a second metal compound particle on the first metal foil. 1 A first foil structure coated with a resin layer, and a second resin layer disposed on the lower surface of the dielectric film and including the first metal compound particles and the second metal compound particles are coated on the second metal foil The second foil structure may include, wherein the first resin layer is in contact with an upper surface of the dielectric film, and the second resin layer is in contact with a lower surface of the dielectric film.

According to an embodiment, the first metal foil and the second metal foil may contain the same metal, and the first metal compound particles and the second metal compound particles may contain different metal compounds.

In the method of manufacturing a high dielectric film according to an embodiment of the present invention, a resin source material including a first metal compound particle and a second metal compound particle different from the first metal compound particle is applied onto a first metal foil. Forming a first foil structure coated with a first resin layer including the first and second metal compound particles on the first metal foil, and applying the resin source material to the second metal foil Providing a step of forming a second foil structure coated with a second resin layer including the first and second metal compound particles on the second metal foil, the first resin layer, and the second resin layer Disposing the first foil structure and the second foil structure to face each other, disposing a dielectric film containing a polymer between the first foil structure and the second foil structure spaced apart from each other, And compressing the first foil structure, the second foil structure, and the dielectric film. Accordingly, a high dielectric film having improved electrical properties and physical properties may be provided. In addition, a method of manufacturing a high dielectric film with a simplified manufacturing process may be provided.

1 is a flowchart illustrating a method of manufacturing a high dielectric film according to an embodiment of the present invention.

2 is a flow chart specifically illustrating a step of forming a first foil structure in a method of manufacturing a high dielectric film according to an exemplary embodiment of the present invention.

3 is a flowchart specifically illustrating a step of forming a second foil structure in a method of manufacturing a high dielectric film according to an exemplary embodiment of the present invention.

4 to 6 are diagrams illustrating a manufacturing process of a high dielectric film according to an embodiment of the present invention.

7 is a diagram illustrating a specific application example of a high dielectric film according to an embodiment of the present invention.

8 and 9 are photographs comparing the surfaces of a foil structure prepared according to the amount of surfactant.

10 is a graph comparing the surface properties of a foil structure manufactured according to the concentration of a surfactant and an antifoaming agent.

11 is a photograph comparing resin source materials prepared according to the type of solvent.

12 to 16 are photographs comparing the surfaces of foil structures manufactured according to the order of providing the antifoaming agent.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content may be thorough and complete, and the spirit of the present invention may be sufficiently conveyed to those skilled in the art.

In the present specification, when a component is referred to as being on another component, it means that it may be formed directly on the other component or that a third component may be interposed between them. In addition, in the drawings, thicknesses of films and regions are exaggerated for effective description of technical content.

In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various components, but these components should not be limited by these terms. Accordingly, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment.

Each embodiment described and illustrated herein also includes its complementary embodiment. In addition, in the present specification,'and/or' is used to mean including at least one of the elements listed before and after.

In the specification, expressions in the singular include plural expressions unless the context clearly indicates otherwise. In addition, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, elements, or a combination of the features described in the specification, and one or more other features, numbers, steps, and configurations It is not to be understood as excluding the possibility of the presence or addition of elements or combinations thereof.

Further, in the following description of the present invention, when it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted.

1 is a flow chart illustrating a method of manufacturing a high dielectric film according to an embodiment of the present invention, and FIG. 2 is a detailed description of a step of forming a first foil structure in a method of manufacturing a high dielectric film according to an embodiment of the present invention. 3 is a flowchart specifically illustrating a step of forming a second foil structure in a method of manufacturing a high dielectric film according to an embodiment of the present invention, and FIGS. 4 to 6 are a high dielectric film according to an embodiment of the present invention. Is a diagram illustrating a manufacturing process of, and FIG. 7 is a diagram illustrating a specific application example of a high dielectric film according to an embodiment of the present invention.

Manufacturing of the first foil structure

1 to 6, the first resin layer 120 may be coated on the first metal foil 110. Accordingly, the first foil structure 100 may be formed (S100). According to an embodiment, the forming of the first foil structure 100 may include preparing a preliminary source (S110), preparing a resin source material (S120), and replacing the resin source material with the first metal foil. It may include a step (S130) provided on (110). Hereinafter, each step will be described in detail.

In the step S110, the first metal compound particles, the second metal compound particles, a surfactant, and a solvent may be mixed. Accordingly, the preliminary source can be prepared. According to an embodiment, the first metal compound particle and the second metal compound particle may be different from each other. For example, the first metal compound particles may be _{BaTiO 3.} On the other hand, the second metal compound particle may be _{BaZrO 3.}

BaTiO ₃ is a high dielectric material and is generally used in high dielectric films. However, in spite of the high dielectric properties, in the case of a high dielectric _{film in which BaTiO 3} is used, problems such as a narrow operating temperature range, high high temperature dependence, and low reliability may occur. Accordingly, in order to solve the above-described problems, BaTiO ₃ and BaZrO ₃ may be used together. That is, when BaTiO ₃ and BaZrO ₃ are used together in a high-k film, not only the above-described problems can be solved, but also high dielectric properties can be exhibited.

The surfactant may improve dispersibility of the first metal compound particles and the second metal compound particles. That is, the surfactant may be used as a dispersant. For example, the surfactant may be an ammonium polycarboxylic acid salt.

According to an embodiment, the content of the surfactant may be controlled. In the case of the surfactant, there is an advantage of improving the dispersibility of the first metal compound particles and the second metal compound particles, but when an excessive amount is used, a non-drying problem and a discoloration problem occurring during curing may occur. I can.

For example, the solvent may be Terpineol. By the surfactant, the first metal compound particles and the second metal compound particles may be uniformly mixed in the solvent. Unlike the above, when MEK, Toluene, etc. are used as the solvent, a sedimentation phenomenon occurs compared to the case where Terpineol is used, so that the first metal compound particles and the second metal compound particles are not uniformly mixed. There may be a problem that cannot be done.

After the first metal compound particles and the second metal compound particles are mixed, the surfactant may be mixed. For example, a material in which the first metal compound particles and the second metal compound particles are mixed may have a concentration of 60 to 80 wt% compared to the resin source material. In addition, the surfactant may have a concentration of 0.5 to 1.5 wt% relative to the resin source material.

According to an embodiment, the first metal compound particles, the second metal compound particles, the surfactant, and the solvent may be mixed through a ball mill process. In this case, the ball mill process may be performed for 2 hours at a rotation speed of 200 to 300 RPM through a Zr Bead having a size of 0.3 mm.

In the step S120, the preliminary source, the binder, and the antifoaming agent may be mixed. Accordingly, the resin source material may be prepared. For a specific example, the binder may be thermosetting epoxy. The antifoaming agent may be a polyether having a concentration of 0.5 to 1.5 wt% relative to the resin source material. Air bubbles generated in the process of mixing the preliminary source and the binder may be removed by the antifoaming agent.

According to an embodiment, the antifoaming agent and the surfactant may be used in the same concentration. For example, the antifoaming agent and the surfactant may be used in a concentration of 6 wt%. In contrast, even if the antifoaming agent and the surfactant exceed 6 wt%, there may be substantially no improvement in the effect of the antifoaming agent and the surfactant. That is, when the concentration of the surfactant and the antifoaming agent is increased, taking into account that the non-drying problem and decoloring problems occur during curing, the concentration of the antifoaming agent and the surfactant can be controlled to 6 wt%. And, accordingly, the resin source material of excellent quality can be manufactured.

According to an embodiment, after the preliminary source and the binder are mixed, the antifoaming agent may be mixed. That is, in the manufacturing process of the resin source material, the defoaming agent may be finally mixed. In this case, air bubbles generated by the surfactant and the binder can be easily removed by the antifoaming agent. In contrast, when a foil structure is manufactured through a resin source material prepared by changing the mixing order of the antifoaming agent, a problem of deteriorating the surface characteristics of the foil structure may occur.

In the step S130, the resin source material may be provided on the first metal foil 110. For example, the first metal foil 110 may include copper (Cu). For another example, the first metal foil 110 may include aluminum (Al). That is, the first metal foil 110 may be a copper (Cu) foil or an aluminum (Al) foil. For example, the first metal foil 110 may have a thickness of 30 μm to 40 μm.

According to an embodiment, the resin source material may be coated on the first metal foil 110. Thereafter, the resin source material may be cured. Accordingly, the first resin layer 120 may be formed on the first metal foil 110. As a result, the first resin layer 120 may include the first metal compound particles and the second metal compound particles.

According to an embodiment, the resin source material may be coated to a thickness of 10 μm on the first metal foil 110 using a Comma coater. In this case, the line speed of the Comma coater can be maintained at 11 m/min. In addition, the resin source material coated on the first metal foil 110 may be first dried at a temperature of 60° C. for 5 minutes and then secondary dried at a temperature of 120° C. for 10 minutes.

According to an embodiment, before the resin source material is coated, the first metal foil 110 may be heat treated. Specifically, the first metal foil 110 may be heat-treated at a temperature of 700° C. and in a hydrogen atmosphere. Alternatively, the first metal foil 110 may be heat-treated in a nitrogen or argon (Ar) atmosphere.

When the resin source material is coated after the first metal foil 110 is heat-treated, surface properties of the first foil structure 100 may be improved. That is, the coating efficiency of the resin source material may be improved. Specifically, when heat treatment is performed before the first metal foil 110 is coated, carbon (C) existing on the surface of the first metal foil 110 may be removed. Accordingly, the coating efficiency of the resin source material may be improved. In addition, when the first metal foil 110 is heat-treated and then the resin source material is coated, CH ₄ may be generated.

Second foil structure manufacturing

1 to 6, a second resin layer 220 may be coated on the second metal foil 210. Accordingly, the second foil structure 200 may be formed (S200). According to an embodiment, the forming of the second foil structure 200 includes preparing a preliminary source (S210), preparing a resin source material (S220), and adding the resin source material to the second metal foil. It may include a step (S230) provided on the (210). Hereinafter, each step will be described in detail.

In the steps S210 and S220, the preliminary source and the resin source material described in the step of manufacturing the first foil structure (S100) may be prepared.

In the step S230, the resin source material may be provided on the second metal foil 210. For example, the second metal foil 210 may include copper (Cu). That is, the second metal foil 210 may be a copper (Cu) foil or an aluminum (Al) foil. For example, the second metal foil 210 may have a thickness of 30 μm to 40 μm.

According to an embodiment, the resin source material may be coated on the second metal foil 210. Thereafter, the resin source material may be cured. Accordingly, the second resin layer 220 may be formed on the second metal foil 210. As a result, the second resin layer 220 may include the first metal compound particles and the second metal compound particles.

According to an embodiment, the resin source material may be coated with a thickness of 10 μm on the second metal foil 210 using a Comma coater. In this case, the line speed of the Comma coater can be maintained at 11 m/min. In addition, the resin source material coated on the second metal foil 210 may be first dried at a temperature of 60° C. for 5 minutes and then secondary dried at a temperature of 120° C. for 10 minutes.

In addition, the features described in the manufacturing method of the first foil structure 100 may also be applied to the manufacturing method of the second foil structure 200.

High dielectric film manufacturing

1 to 6, the first foil structure 100 and the second foil structure 200 may be disposed to be spaced apart from each other. According to an embodiment, the first foil structure 100 and the second foil structure 200 may be disposed so that the first resin layer 120 and the second resin layer 220 face each other ( S300).

A dielectric film 300 may be disposed between the first foil structure 100 and the second foil structure 200 spaced apart from each other (S400). According to an embodiment, the dielectric film 300 may include a polymer. For example, the polymer may include polyimide. For example, the dielectric film 300 may have a thickness of 6 μm to 8 μm. For another example, the polymer may include PA, PET, PE, PEN, and the like.

As described above, when the first resin layer 120 and the second resin layer 220 face each other, the dielectric film 300 is formed of the first resin layer 120 and the second resin layer 220. ) Can be placed between.

The first foil structure 100, the second foil structure 200, and the dielectric film 300 may be compressed (S500). Accordingly, the high dielectric film 10 may be manufactured. According to an embodiment, the first foil structure 100, the second foil structure 200, and the dielectric film 300 may be compressed through a hot press process. In this case, the hot pressing process may be performed for 30 minutes at a temperature of 140 to 160 °C and ^{a pressure of 150 to 200 kgf/cm 2.}

As a result, the high dielectric film 10 is disposed on an upper surface of the dielectric film 300 and the dielectric film 300 including the polymer, and the first metal foil 110 It is disposed on the first foil structure 100 coated with the first resin layer 120 including the metal compound particles and the second metal compound particles, and the lower surface of the dielectric film 300, and the second Including the second foil structure 200 coated with the second resin layer 220 including the first metal compound particles and the second metal compound particles on a metal foil 210, the first number The stratum 110 may be in contact with the upper surface of the dielectric film 300, and the second resin layer 210 may include in contact with the lower surface of the dielectric film 300. Accordingly, the high dielectric film 10 with improved electrical properties and physical properties may be provided.

The high dielectric film 10 according to the above-described embodiment may be used by being embedded in a substrate. For example, as shown in FIG. 7, the high dielectric film 10 may be embedded in a printed circuit board (PBC) 20 on which the IC chip 30 is disposed. In this case, the high dielectric film 10 may operate as a capacitor. As described above, as the high-k film 10 has improved electrical characteristics, the printed circuit board in which the high-k film 10 is embedded may improve circuit performance.

In the above, a high dielectric film and a method of manufacturing the same according to an embodiment of the present invention have been described. Hereinafter, specific experimental examples and characteristic evaluation results of a high dielectric film and a method of manufacturing the same according to an embodiment of the present invention are described.

Preparation of resin source material according to the embodiment

BaTiO ₃ powder, BaZrO ₃ powder, polycarboxylic acid ammonium salt (surfactant), and Terpineol (solvent) were sequentially mixed to prepare a preliminary source material. Specifically, BaTiO ₃ powder and BaZrO ₃ powder were mixed at a dispersion ratio of 60 to 80 wt%, and the polycarboxylic acid ammonium salt was 0.5 to 1.5 wt% of Sannov 5468, and the mixing method was Ball mill (Bead Zr 0.3 mm) was mixed for 2 hours at 200-300 RPM.

Thereafter, the prepared preliminary source material, thermosetting epoxy (binder), and a defoaming agent (0.5 to 1.5 wt% Sannov 551) were sequentially mixed to prepare a resin source material according to the above embodiment.

Fabrication of the foil structure according to the embodiment

The resin source material according to the above-described embodiment, and rolled copper having a thickness of 35±5 μm are prepared. Thereafter, a resin source material was coated on the rolled copper at a speed of 11m/min through a Comma coater, and the primary drying was performed at a temperature of 60℃ for 5 minutes, followed by secondary drying at a temperature of 120℃ for 10 minutes. Was carried out to prepare a first foil structure.

Thereafter, a second foil structure was manufactured using the same material and method as the method of manufacturing the first foil structure.

Preparation of high dielectric film according to the embodiment

The above-described first foil structure, second foil structure, and a PI film having a thickness of 7±1 μm were prepared. After arranging the resin coating layer of each foil structure to face each other with the PI film interposed, it ^{was compressed for 30 minutes at a temperature of 140 to 160°C and a force of 150 to 200 kgf/cm 2} through hot press, and according to the above example A high dielectric film according to was prepared.

Preparation of resin source material and foil structure according to Comparative Example 1

Resin source material according to the prepared in the method of manufacturing a resin source material according to the embodiment described above, BaTiO ₃ powder, BaZrO ₃ powder, Terpineol, a defoaming agent, a polycarboxylic acid ammonium salt, and Comparative Example 1 were mixed in the order of a thermosetting Epoxy Was prepared. Thereafter, the resin source material according to Comparative Example 1 was coated on the rolled copper to prepare a foil structure according to Comparative Example 1.

Preparation of resin source material and foil structure according to Comparative Example 2

The resin source material according to Comparative Example 2 was prepared by the method of manufacturing a resin source material according to the above-described embodiment, but _{simultaneously mixing BaTiO 3} powder, BaZrO ₃ powder, polycarboxylic acid ammonium salt, Terpineol, thermosetting epoxy, and antifoaming agent. Was prepared. Thereafter, the resin source material according to Comparative Example 2 was coated on the rolled copper to prepare a foil structure according to Comparative Example 1.

Preparation of resin source material and foil structure according to Comparative Example 3

_{The resin source material according to Comparative Example 3} was prepared by the method of manufacturing a resin source material according to the above-described embodiment, but mixed in the order of BaTiO 3 powder, BaZrO ₃ powder, polycarboxylic acid ammonium salt, Terpineol, antifoaming agent, and thermosetting epoxy. Was prepared. Thereafter, the resin source material according to Comparative Example 3 was coated on rolled copper to prepare a foil structure according to Comparative Example 3.

Preparation of resin source material and foil structure according to Comparative Example 4

Prepared by the method of preparing a resin source material according to the above-described embodiment, but _{after sequentially mixing BaTiO 3} powder, BaZrO ₃ powder, polycarboxylic acid ammonium salt, and Terpineol, thermosetting epoxy and antifoaming agent were simultaneously mixed to obtain Comparative Example 4 The resin source material was prepared according to. Thereafter, a resin source material according to Comparative Example 4 was coated on rolled copper to prepare a foil structure according to Comparative Example 4.

Preparation of resin source material and foil structure according to Comparative Example 5

A resin source material according to Comparative Example 5 was prepared by manufacturing the resin source material according to the above-described embodiment, but without using an ammonium polycarboxylic acid salt, and mixing the remaining materials. Thereafter, the resin source material according to Comparative Example 5 was coated on rolled copper to prepare a foil structure according to Comparative Example 5.

The manufacturing sequence of the resin source material according to Examples and Comparative Examples 1 to 4 is summarized in Table 1 below.

division	order
Example	First metal, second metal, surfactant, solvent mixing / binder mixing / antifoaming agent mixing
Comparative Example 1	First metal, second metal, solvent mixed antifoaming agent mixed / surfactant mixed / binder mixed
Comparative Example 2	Simultaneous mixing of first metal, second metal, surfactant, solvent, binder, and antifoaming agent
Comparative Example 3	First metal, second metal, surfactant, solvent mixing / antifoaming agent mixing / binder mixing
Comparative Example 4	1st metal, 2nd metal, surfactant, solvent mixing / binder, antifoaming agent simultaneous mixing

8 and 9 are photographs comparing the surfaces of a foil structure manufactured according to the concentration of a surfactant.

8, the surface of the foil structure according to Comparative Example 5 was photographed and shown. Figure 8 (a) and (b) shows a state photographed at different magnifications.

Referring to FIG. 9, the surface of the foil structure according to the embodiment is photographed and shown. However, during the manufacturing process of the foil structure according to the above embodiment, the concentration of the surfactant and the antifoaming agent was controlled to 6 wt%. (A) and (b) of FIG. 9 show states photographed at different magnifications.

As can be seen in Figures 8 and 9, compared to the foil structure manufactured without using a surfactant, the foil structure manufactured using a surfactant of 6 wt% concentration, it can be confirmed that the surface roughness characteristics are remarkably high. there was. That is, it was confirmed that the dispersion of the first metal compound particles and the second metal compound particles was improved by the surfactant, so that the resin source material was easily coated.

10 is a graph comparing the surface properties of a foil structure manufactured according to the concentration of a surfactant and an antifoaming agent.

Referring to FIG. 10, a plurality of resin source materials according to the above embodiments are prepared, but the concentrations of the surfactant and the antifoam are different from each other, and a foil structure is manufactured through each of the prepared resin source materials. Surface properties were measured. The measured results are summarized in <Table 2> below.

Surfactant and antifoam concentration (wt%)	Ra (nm)	Rz (nm)
All 0	149	516
All 1	135	486
All 2	124	475
All 4	86	399
All 6	51	293
All 8	49	288
All 9	48	276
All 10	47	267

As can be seen from FIG. 10 and <Table 1>, when the concentration of the surfactant and the antifoaming agent exceeded 6 wt%, it was confirmed that the Ra (nm) and Rz (nm) values were significantly reduced. That is, it was found that the surfactant and the antifoam were saturated at a concentration of 6 wt%. As a result, it can be seen that by controlling the concentration of the surfactant and the defoaming agent to 6 wt%, a resin source material of excellent quality can be prepared.

11 is a photograph comparing resin source materials prepared according to the type of solvent.

Referring to FIG. 11, in the manufacturing process of the high dielectric film according to the above embodiment, the prepared resin source material was photographed and shown for the case of using MEK (methyl ethyl ketone) as the solvent and the case of using Terpineol. Figure 11 (a) shows a case where MEK is used, and Figure 11 (b) shows a case where Terpineol is used.

As can be seen from FIG. 11, in the case of the resin source material prepared by using MEK, it was confirmed that the sedimentation phenomenon occurred and the dispersion of the first metal compound particles and the second metal compound particles was not easily achieved. This is believed to be due to the small particle size of MEK and high solide content. Accordingly, it can be seen that using Terpineol as a solvent is an effective method of preparing the resin source material.

12 to 16 are photographs comparing the surfaces of foil structures manufactured according to the order of providing the antifoaming agent.

Referring to FIG. 12, the surface of the foil structure according to the above-described embodiment is photographed and shown. FIG. 12(a) shows a low magnification photograph, and FIG. 12(b) shows a high magnification photograph.

Referring to FIG. 13, the surface of the foil structure according to Comparative Example 1 is photographed and shown.

Referring to FIG. 14, the surface of the foil structure according to Comparative Example 2 was photographed and shown.

Referring to FIG. 15, the surface of the foil structure according to Comparative Example 3 was photographed and shown. FIG. 15A shows a low magnification photograph and FIG. 12B shows a high magnification photograph.

16, the surface of the foil structure according to Comparative Example 4 was photographed and shown. FIG. 16A shows a low magnification photograph and FIG. 12B shows a high magnification photograph.

As can be seen in FIGS. 12 to 16, it was confirmed that the surface characteristics of the foil structure according to the embodiment are better than that of the foil structures according to Comparative Examples 1 to 4.

As a result, it can be seen that preparing the resin source material in the order of the first metal compound particle-second metal compound particle-surfactant-solvent-binder-antifoaming agent is an effective method of improving the coating efficiency of the resin source material. have.

In the above, the present invention has been described in detail using preferred embodiments, but the scope of the present invention is not limited to specific embodiments, and should be interpreted by the appended claims. In addition, those who have acquired ordinary knowledge in this technical field should understand that many modifications and variations can be made without departing from the scope of the present invention.

The high-k film and its manufacturing method according to an embodiment of the present invention may be used in various industrial fields such as a thin film capacitor inserted into a PCB substrate.

Claims (7)

1. A resin source material including a first metal compound particle and a second metal compound particle different from the first metal compound particle is provided on a first metal foil, and the first and Forming a first foil structure coated with a first resin layer including a second metal compound particle;

   Providing the resin source material on a second metal foil to form a second foil structure coated with a second resin layer including the first and second metal compound particles on the second metal foil;

   The first foil structure and the second foil structure are arranged spaced apart from each other so that the first resin layer and the second resin layer face each other, and between the first foil structure and the second foil structure spaced apart from each other, Placing a dielectric film comprising a polymer; And

   A method of manufacturing a high dielectric film comprising compressing the first foil structure, the second foil structure, and the dielectric film.
2. The method of claim 1,

   The first foil structure forming step and the second foil structure forming step each include preparing the resin source material,

   The resin source material preparation step,

   Preparing a preliminary source by mixing the first metal compound particles, the second metal compound particles, a solvent, and a surfactant; And

   A method of manufacturing a high dielectric film comprising the step of mixing the preliminary source, the binder, and the antifoaming agent.
3. The method of claim 2,

   The first metal compound particles include BaTiO ₃ , and the second metal compound particles include BaZrO ₃ .
4. The method of claim 1,

   The first metal foil and the second metal foil both contain copper (Cu).
5. The method of claim 1,

   The polymer is a method of manufacturing a high dielectric film containing polyimide.
6. A dielectric film containing a polymer;

   A first foil structure disposed on an upper surface of the dielectric film and coated with a first resin layer including a first metal compound particle and a second metal compound particle on the first metal foil; And

   A second foil structure disposed on a lower surface of the dielectric film and coated with a second resin layer including the first metal compound particles and the second metal compound particles on a second metal foil,

   Wherein the first resin layer is in contact with an upper surface of the dielectric film, and the second resin layer is in contact with a lower surface of the dielectric film.
7. The method of claim 6,

   The first metal foil and the second metal foil contain the same metal,

   The first metal compound particles and the second metal compound particles are high-k films containing different metal compounds.

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