WO2021027320A1 - 具有空腔支撑结构的体声波谐振器、滤波器和电子设备 - Google Patents

具有空腔支撑结构的体声波谐振器、滤波器和电子设备 Download PDF

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WO2021027320A1
WO2021027320A1 PCT/CN2020/086565 CN2020086565W WO2021027320A1 WO 2021027320 A1 WO2021027320 A1 WO 2021027320A1 CN 2020086565 W CN2020086565 W CN 2020086565W WO 2021027320 A1 WO2021027320 A1 WO 2021027320A1
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Prior art keywords
area
supporting
effective area
resonator
resonator according
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PCT/CN2020/086565
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English (en)
French (fr)
Inventor
张孟伦
庞慰
杨清瑞
张全德
徐利军
Original Assignee
天津大学
诺思(天津)微系统有限责任公司
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Publication of WO2021027320A1 publication Critical patent/WO2021027320A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/56—Monolithic crystal filters
    • H03H9/564—Monolithic crystal filters implemented with thin-film techniques
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H03H9/58—Multiple crystal filters
    • H03H9/582—Multiple crystal filters implemented with thin-film techniques
    • H03H9/586—Means for mounting to a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/588—Membranes

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, and more particularly to a bulk acoustic wave resonator, a filter, and an electronic device having one of the above-mentioned components.
  • FBAR Film Bulk Acoustic Resonator
  • BAW Bulk Acoustic Wave Resonator
  • FBAR filters have small size ( ⁇ m level), High resonant frequency (GHz), high quality factor (1000), large power capacity, good roll-off effect and other excellent characteristics, are gradually replacing traditional surface acoustic wave (SAW) filters and ceramic filters, playing in the field of wireless communication radio frequency Great role, and its high sensitivity advantage can also be applied to the sensing fields of biology, physics and medicine.
  • SAW surface acoustic wave
  • the main structure of the film bulk acoustic wave resonator is a "sandwich" structure consisting of electrode-piezoelectric film-electrode, that is, a layer of piezoelectric film material is sandwiched between two metal electrode layers.
  • FBAR uses the inverse piezoelectric effect to convert the input electrical signal into mechanical resonance, and then uses the piezoelectric effect to convert the mechanical resonance into electrical signal output.
  • the film bulk acoustic resonator mainly uses the longitudinal piezoelectric coefficient (d33) of the piezoelectric film to generate the piezoelectric effect, so its main operating mode is the thickness extensional mode (TE mode for short).
  • FIG. 7A is a top view of a bulk acoustic wave resonator in the prior art
  • FIG. 7B is a cross-sectional view along the broken line A1OA2 in FIG. 7A.
  • Figures 7A-7B by removing the piezoelectric layer 50 above the fold line B1O'B2, a part of the bottom electrode 40, the bottom electrode pins 35 and the substrate 10 can be exposed in a plan view. The details of each part are as follows:
  • Substrate usually the material can be monocrystalline silicon, gallium arsenide, sapphire, quartz, etc.
  • Acoustic mirror In the above example, it is an air cavity. Bragg reflection layer or other equivalent acoustic reflection structure can also be used.
  • bottom electrode (pin)/top electrode (pin) can use molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or more metals The compound or its alloy.
  • Piezoelectric layer film optional materials such as aluminum nitride, zinc oxide, PZT and containing rare earth element doped materials with a certain atomic ratio of the above materials.
  • FIG. 7C shows a schematic diagram of the temperature gradient distribution of the effective area AR of the resonator corresponding to FIG. 7A (where the dark place represents low temperature, and the bright place represents high temperature), and the highest temperature point is located at ⁇ in the figure.
  • the present invention proposes a power enhancement structure placed at or near the center of the top view of the effective acoustic area of the bulk wave resonator, which can make the vibration frequency at the highest temperature point in the resonator and its vicinity deviate from the resonance point, thereby reducing the resonator temperature the goal of.
  • a bulk acoustic wave resonator including:
  • the area where the acoustic mirror cavity, bottom electrode, piezoelectric layer, and top electrode overlap in the thickness direction of the substrate is the effective area of the resonator;
  • a support structure is arranged in the acoustic mirror cavity, the lower end of the support structure is arranged at the bottom of the acoustic mirror cavity, and the upper end of the support structure is connected to the lower side of the effective area in the high temperature area of the effective area Or contact,
  • the high-temperature area refers to an area with the centroid of the effective area as the center and r as the radius, where the radius r is 50% of the radius of the equivalent circle of the effective area where the high-temperature area is located
  • the equivalent circle is: A circle with the center of mass of the effective area as the center and the area of the circle equal to the area of the effective area.
  • the radius r is 20% of the radius of the equivalent circle of the effective area where the high temperature area is located.
  • the upper end of the support structure is connected or in contact with the lower side of the effective area only in the high temperature area of the effective area.
  • the supporting structure is a frustum-shaped structure
  • the cross-sectional area of the upper end is smaller than the cross-sectional area of the lower end
  • the top of the frustum-shaped structure forms a supporting surface
  • the supporting surface is connected to the bottom side of the bottom electrode.
  • the frustum-shaped structure is a quadrangular prism structure, a triangular prism structure, or a truncated frustum structure.
  • the upper end of the support structure has a support surface, and the support surface is connected to the bottom side of the bottom electrode; the lower end of the support structure has a fixing surface that is connected to the bottom of the acoustic mirror cavity; the support The structure further includes an elastic connecting portion connected between the supporting surface and the fixing surface, and the elastic connecting portion provides an elastic force that causes the supporting surface to abut against the bottom electrode.
  • the elastic connecting portion is a wing-shaped portion.
  • a first oblique angle is formed between the wing-shaped portion and the fixing surface, and the first oblique angle is in a range of 10-80 degrees.
  • the wing-shaped portion is a trapezoid, the upper bottom of the trapezoid is connected to the supporting surface, and the lower bottom of the trapezoid is connected to the fixing surface.
  • the wing-shaped portion is serpentine. Further, the end of the serpentine shape that contacts the supporting surface is smaller than the end of the serpentine shape that contacts the fixed surface.
  • the wing-shaped portion includes a plurality of wing-shaped portions spaced at equal angles in a plan view of the resonator, and the multiple wing-shaped portions have the same first oblique angle; and the fixing surface is an annular fixing surface or the The fixing surface includes a plurality of fixing surfaces equally angularly spaced apart in a plan view of the resonator, and the plurality of fixing surfaces respectively correspond to the plurality of wing-shaped portions.
  • the supporting surface has only one supporting surface, and the multiple wing-shaped portions are all connected to the one supporting surface; or the supporting surface has multiple supporting surfaces, and the multiple wing-shaped portions are connected to the The multiple supporting surfaces are connected.
  • the wing-shaped portion includes two wing-shaped portions arranged mirror-symmetrically in a top view of the resonator, the supporting surface has only one supporting surface, and the two wing-shaped portions are both connected to the one supporting surface.
  • the wing-shaped portion includes a plurality of wing-shaped portions arranged rotationally symmetrically in a top view of the resonator, the supporting surface has only one supporting surface, and the multiple wing-shaped portions are all connected to the one supporting surface.
  • the supporting structure is a columnar structure with the same cross-section, the top surface of the columnar structure forms a supporting surface, and the supporting surface is connected to the bottom side of the bottom electrode.
  • the supporting structure is a thermally conductive structure, which is suitable for conducting heat from the high-temperature area of the effective area from the supporting structure to the substrate.
  • the support structure forms a surface connection with the bottom electrode, and the support structure forms a surface connection with the bottom of the acoustic mirror cavity.
  • the contact area between the support structure and the lower side of the effective area is not greater than 1% of the area of the effective area; or the longest side of the contact surface between the support structure and the lower side of the effective area
  • the length of the side does not exceed 1/10 of the length of the longest side of the effective area; or the length of the longest side or the diameter of the contact surface of the support structure and the lower side of the effective area is in the range of 0.1-20 ⁇ m.
  • the contact area between the support structure and the lower side of the effective area is not more than 0.1% of the area of the effective area; or the side of the longest side of the contact surface of the support structure and the lower side of the effective area The length does not exceed 1/30 of the longest side of the effective area.
  • the supporting structure is a first supporting structure; and the resonator further includes a plurality of auxiliary supporting structures, the plurality of auxiliary supporting structures are arranged around the first supporting structure, and the lower end of the auxiliary supporting structure It is arranged at the bottom of the acoustic mirror cavity, and the upper end of the auxiliary support structure is connected or in contact with the lower side of the effective area.
  • the plurality of auxiliary support structures are distributed on at least one circle with the center of mass of the effective area as the center, and are equally angularly spaced on the circle.
  • the height of the supporting structure ranges from H ⁇ 1 ⁇ m, where H is the depth of the cavity of the corresponding acoustic mirror.
  • a filter including the above-mentioned resonator.
  • an electronic device which includes the above-mentioned resonator or the above-mentioned filter.
  • Fig. 1A is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 1B is a schematic diagram of a supporting structure provided in the cavity of the acoustic mirror in FIG. 1A according to an exemplary embodiment of the present invention
  • FIG. 1C is a schematic diagram of the supporting structure in FIG. 1A according to an exemplary embodiment of the present invention.
  • FIG. 1D is a schematic diagram of the supporting structure in FIG. 1A according to an exemplary embodiment of the present invention.
  • FIG. 2A is a schematic diagram of a supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • Figure 2B is a side view of the support structure in Figure 2A;
  • FIG. 3 is a schematic diagram of a supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 4A is a schematic diagram of a supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 4B is a schematic top view of the supporting structure in FIG. 4A;
  • 5A is a schematic diagram of a supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 5B is a schematic top view of the supporting structure in FIG. 5A;
  • FIG. 6A is a schematic diagram of a first supporting structure and an auxiliary supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • Fig. 6B is a schematic diagram of the distribution of an auxiliary support structure according to an exemplary embodiment of the present invention.
  • 6C is a schematic diagram of the distribution of an auxiliary support structure according to an exemplary embodiment of the present invention.
  • Fig. 7A is a top view of a bulk acoustic wave resonator in the prior art
  • Figure 7B is a cross-sectional view along the broken line A1OA2 in Figure 7A;
  • FIG. 7C is a schematic diagram of the temperature gradient distribution of the effective area AR of the resonator corresponding to FIG. 7A, in which the dark place represents low temperature, and the bright place represents high temperature, and the highest temperature point is located at ⁇ in the figure.
  • Fig. 1A is a schematic cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • Substrate usually the material can be monocrystalline silicon, gallium arsenide, sapphire, quartz, etc.
  • bottom electrode (pin)/top electrode (pin) can use molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or more metals The compound or its alloy.
  • Piezoelectric layer film optional materials such as aluminum nitride, zinc oxide, PZT and containing rare earth element doped materials with a certain atomic ratio of the above materials.
  • the support structure 30 is disposed in the acoustic mirror cavity 20, the lower end of the support structure 30 is disposed at the bottom of the acoustic mirror cavity 20, and the upper end of the support structure is in the high temperature area of the effective area. Connected to the bottom side of the bottom electrode 40, the height between the lower end and the upper end of the support structure 30 is the depth of the acoustic mirror cavity.
  • the "high temperature area” refers to the area with the centroid of the effective area as the center and r as the radius.
  • the radius r is 50% of the radius of the equivalent circle of the effective area.
  • the above equivalent circle is: a circle with the center of mass of the effective area as the center and the area of the circle equal to the area of the effective area.
  • only a part of the upper end of the support structure may be located in the high temperature area, or all of it may be located in the high temperature area, which is within the protection scope of the present invention.
  • the spatial distribution of the thermal power density of the resonator is directly related to the spatial distribution of the substance in the effective area of the resonator, and the effective area is convex geometry.
  • the position with the highest thermal power density is near the center of the material distribution (center of mass).
  • the effective area of the resonator is composed of different materials such as the metal electrode layer and the piezoelectric layer in the thickness direction, since the thickness of each material layer is generally uniform (or nearly uniform), the effective area is equal in the top plane.
  • the effective surface density can be considered uniform.
  • the position of the plane centroid of the effective area is the plane geometric center of the area.
  • the vibration frequency at or near the highest temperature point of the resonator can deviate from the resonance point. This helps to reduce the temperature of the highest temperature point of the resonator or the temperature in its vicinity, thereby increasing the power capacity of the entire resonator.
  • the support structure 30 itself also has a heat transfer function, it helps to conduct the heat in the bottom electrode to the substrate, and provides another heat dissipation channel for the effective area of the resonator except the edge of the resonator. Further reduce the temperature of the resonator, thereby increasing the power capacity of the resonator.
  • the support structure is a heat-conducting structure, which is suitable for conducting heat from the high-temperature area of the effective area from the support structure to the substrate. Furthermore, the support structure forms a surface connection with the bottom electrode, and the support structure forms a surface connection with the bottom of the acoustic mirror cavity.
  • FIG. 1A only schematically shows that the support structure 30 is disposed between the bottom electrode and the bottom of the acoustic mirror cavity.
  • the structure of the support structure 30 will be described in detail below.
  • FIG. 1B is a schematic diagram of the supporting structure provided in the cavity of the acoustic mirror in FIG. 1A according to an exemplary embodiment of the present invention
  • FIG. 1C is a schematic diagram of the supporting structure in FIG. 1A according to an exemplary embodiment of the present invention.
  • the supporting structure is a quadrangular pyramid structure with a small top and a large bottom, and the top surface of the quadrangular pyramid structure is the supporting surface.
  • the contact surface of the top of the tapered quadrangular prism with the lower electrode is a rectangle.
  • the length a0 of one side of the rectangle ranges from 0.1-20 ⁇ m, preferably 0.1-10 ⁇ m, and the length b0 of the other side ranges from 0.1-20 ⁇ m, preferably 0.1-10 ⁇ m .
  • the first included angle ⁇ 0 between the side of the prism and the vertical direction ranges from 10-80 degrees, and the second included angle ⁇ 0 ranges from 10-80 degrees;
  • the range of the prism height h01 is H ⁇ 1 ⁇ m, where H is the cavity of the corresponding resonator acoustic mirror The depth of the cavity.
  • the supporting structure shown in FIG. 1B is in the shape of a quadrangular pyramid, but the present invention is not limited to this.
  • the support structure is in the shape of a truncated cone.
  • the top and bottom surfaces of the tapered cylinder are both circular.
  • the top surface radius r0 ranges from 0.05-10 ⁇ m, preferably 0.05-5 ⁇ m
  • the bottom surface radius R0 ranges from 1-50 ⁇ m
  • the range of h02 is H ⁇ 1 ⁇ m, where H is the depth of the cavity of the corresponding resonator acoustic mirror.
  • the support structure may also be in the shape of, for example, a triangular pyramid; or, the support structure may be a columnar structure with the same cross section, such as a cylinder, a square column, etc.
  • the support structure may also take other forms, especially the support structure has elasticity in the thickness direction of the resonator. In this way, the rigidity of the support structure in the thickness direction of the resonator can be reduced, thereby reducing the impact of the support structure on the resonator and reducing energy loss.
  • FIG. 2A is a schematic diagram of a supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 2B is a side view of the supporting structure in FIG. 2A.
  • the support structure has a rectangular base part, the first side length a3 of the base part is in the range of 10-50 ⁇ m, the second side length b3 is in the range of 10-50 ⁇ m; the top contact part is rectangular, the contact part
  • the first side length a1 ranges from 0.1-20 ⁇ m, preferably the range 0.1-10 ⁇ m, and the second side length b1 ranges from 0.1-20 ⁇ m, preferably the range 0.1-10 ⁇ m; in addition, there is an inclined connecting part between the base part and the contact part.
  • the bottom of the trapezoid is a trapezoid
  • the length b2 of the bottom of the trapezoid is in the range of 2-40 ⁇ m
  • the upper bottom of the trapezoid is coincident with the second side of the contact part.
  • Figure 2B shows a side view of the structure in Figure 4A, in which the angle between the connecting part of the structure and the horizontal direction ⁇ 1 ranges from 10-80 degrees; the overall height h03 ranges from H ⁇ 1 ⁇ m, where H is the cavity of the corresponding resonator acoustic mirror depth.
  • the thickness T1 of the support structure ranges from 0.01 to 0.5 ⁇ m.
  • the upper end of the supporting structure has a supporting surface connected to the bottom side of the bottom electrode; the lower end of the supporting structure has a fixing surface connected to the bottom of the acoustic mirror cavity
  • the supporting structure further includes an elastic connecting portion connected between the supporting surface and the fixed surface, the elastic connecting portion provides an elastic force that makes the supporting surface upward to abut the bottom electrode.
  • the elastic connecting portion may be a wing-shaped portion.
  • a first oblique angle ⁇ 1 is formed between the wing-shaped portion and the fixing surface, and the first oblique angle is in the range of 10-80 degrees.
  • the wing-shaped portion is a trapezoid, the upper bottom of the trapezoid is connected to the supporting surface, and the lower bottom of the trapezoid is connected to the fixing surface.
  • Fig. 3 is a schematic diagram of a supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention.
  • the elastic connecting portion or wing-shaped portion is serpentine to further reduce its rigidity and increase its degree of freedom.
  • the end of the serpentine that is in contact with the supporting surface is smaller than the end of the serpentine that is in contact with the fixed surface.
  • the lower end of the serpentine wing is larger, and The upper end is smaller, which is conducive to deformation of the wing.
  • FIG. 4A is a schematic diagram of a supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 4B is a schematic top view of the supporting structure in FIG. 4A.
  • Figures 4A and 4B show a mirror-symmetric support structure.
  • the structure of FIG. 2A can be mirror-extended to form the symmetrical power enhancement structure in FIG. 4A.
  • the supporting structure is symmetrical about the straight lines L1L2 and L3L4.
  • the wing-shaped portion includes two wing-shaped portions arranged mirror-symmetrically in the top view of the resonator, the supporting surface has only one supporting surface, and the two wing-shaped portions are both Connected to the one supporting surface.
  • FIG. 5A is a schematic diagram of a supporting structure of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 5B is a schematic top view of the supporting structure in FIG. 5A.
  • 5A and 5B show that the supporting structure is a rotationally symmetric structure.
  • the supporting structure is made into the structure shown in FIG. 5A, which has an annular base part, a circular contact part and three fan-shaped connecting parts.
  • the overall thickness of the support structure is T2, the range of T2 is 0.01-0.5 ⁇ m, and the overall height h04 is in the range of H ⁇ 1 ⁇ m, where H is the depth of the cavity of the corresponding resonator acoustic mirror.
  • FIG. 5B is a top view of the structure in Fig. 5A, which shows the key dimensions of the support structure.
  • the inner inner diameter R1 of the base ring is in the range of 1-50 ⁇ m
  • the outer radius R2 is in the range of 5-100 ⁇ m
  • -10 ⁇ m preferably in the range of 0.05-5 ⁇ m
  • the angle ⁇ 2 of the top-view projection of the fan-shaped connecting portion ranges from 10 to 40 degrees.
  • This structure reduces structural rigidity and has higher stability. In other words, in the embodiment of FIGS.
  • the wing-shaped portion includes a plurality of wing-shaped portions arranged rotationally symmetrically in a top view of the resonator, the supporting surface has only one supporting surface, and the plurality of wing-shaped portions are all Connected to the one supporting surface.
  • the present invention can also be provided with another auxiliary supporting structure in addition to the above-mentioned supporting structure, as shown in Figs. 6A-6C.
  • auxiliary supporting structures 31 are also added around it.
  • the advantages of the multi-support structure are: increasing the number of contact surfaces can further enhance the thermal conductivity; increase the structural stability; the multi-support structure adopts a certain distribution method and can also suppress the parasitic mode vibration in the resonator.
  • the contact surface between the support structure and the effective acoustic area of the resonator can be distributed on several centers with the geometric center of the central contact surface as the center.
  • the radius of the concentric circle from the inside to the outside is Rm1, Rm2, Rm3 and so on.
  • the radius of the innermost circle is in the range of 1-50 ⁇ m, and the radius of each circle from the inside to the outside and the radius of the adjacent inner circle differs in the range of 1-50 ⁇ m.
  • a number of contact surfaces are also distributed along multiple radial directions, and the radial direction equally divides the circumference. For example, the circumference is divided into 4 equal parts in the radial direction in FIG. 6B, while the circle is divided into 5 equal parts in FIG. 6C. Other integers such as 3, 6, 8, 9... and so on.
  • the contact area between the support structure and the effective area is too small, and the heat dissipation effect is not obvious. However, if the area is too large, the Q value of the resonator will decrease, and at the same time, it can also cause negative effects such as enhancement of parasitic modes. Therefore, it should also be pointed out that in the present invention, the contact area between the support structure and the lower side of the effective area or with the bottom electrode in the effective area can be limited.
  • the contact area between the support structure and the lower side of the effective area is not greater than 1% of the area of the effective area, and further, not greater than 0.1%; or the support structure and the lower side of the effective area are The side length of the longest side of the contact surface does not exceed 1/10 of the longest side length of the effective area, and further, it does not exceed 1/30; or the longest side of the contact surface between the support structure and the lower side of the effective area
  • the length of the long side or diameter ranges from 0.1-20 ⁇ m.
  • the value of the numerical range in addition to the end value (when the end value is included) or the adjacent end value in the range (when the end value is not included), it may also be, for example, the middle of the range. Value etc.
  • a bulk acoustic wave resonator including:
  • the area where the acoustic mirror, bottom electrode, piezoelectric layer, and top electrode overlap in the thickness direction of the substrate is the effective area of the resonator;
  • a support structure is arranged in the acoustic mirror cavity, the lower end of the support structure is arranged at the bottom of the acoustic mirror cavity, and the upper end of the support structure is connected to the lower side of the effective area in the high temperature area of the effective area Or contact,
  • the high-temperature area refers to an area with the centroid of the effective area as the center and r as the radius, where the radius r is 50% of the radius of the equivalent circle of the effective area where the high-temperature area is located
  • the equivalent circle is: A circle with the center of mass of the effective area as the center and the area of the circle equal to the area of the effective area.
  • a filter comprising the above-mentioned resonator.
  • An electronic device comprising the above-mentioned resonator or the above-mentioned filter.
  • the electronic equipment here includes, but is not limited to, intermediate products such as radio frequency front-ends, filter amplification modules, and terminal products such as mobile phones, WIFI, and drones.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

本发明涉及体声波谐振器，包括：基底；声学镜空腔；底电极；顶电极；压电层，其中：声学镜空腔、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；且所述声学镜空腔内设置有支撑结构，所述支撑结构的下端设置于声学镜空腔的底部，所述支撑结构的上端在所述有效区域的高温区域与所述有效区域的下侧连接或接触，所述高温区域是指以有效区域的质心为圆心、r为半径的区域，所述半径r为高温区域所在有效区域的等效圆的半径的50％，所述等效圆为：以该有效区域的质心为圆心且圆的面积等于有效区域的面积的圆。本发明还涉及滤波器与电子设备。

Description

具有空腔支撑结构的体声波谐振器、滤波器和电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器，一种滤波器，一种具有上述部件中的一种的电子设备。
背景技术
薄膜体声波谐振器(Film Bulk Acoustic Resonator，简称FBAR，又称为体声波谐振器，也称BAW)作为一种MEMS芯片在通信领域发挥着重要作用，FBAR滤波器具有尺寸小(μm级)、谐振频率高(GHz)、品质因数高(1000)、功率容量大、滚降效应好等优良特性，正在逐步取代传统的声表面波(SAW)滤波器和陶瓷滤波器，在无线通信射频领域发挥巨大作用，其高灵敏度的优势也能应用到生物、物理、医学等传感领域。
薄膜体声波谐振器的结构主体为由电极-压电薄膜-电极组成的“三明治”结构，即两层金属电极层之间夹一层压电薄膜材料。通过在两电极间输入正弦信号，FBAR利用逆压电效应将输入电信号转换为机械谐振，并且再利用压电效应将机械谐振转换为电信号输出。薄膜体声波谐振器主要利用压电薄膜的纵向压电系数(d33)产生压电效应，所以其主要工作模式为厚度方向上的纵波模式(Thickness Extensional Mode，简称TE模式)。
图7A为现有技术中的体声波谐振器的俯视图，图7B为图7A中沿折线A1OA2的剖视图。如图7A-7B所示，通过去除折线B1O’B2上方的压电层50，可在俯视图中暴露出部分底电极40，和底电极引脚35以及基底10，各部分细节说明如下：
10：基底，通常材料可选单晶硅，砷化镓，蓝宝石，石英等。
20：声学镜，上述实例中为空气腔，也可采用布拉格反射层或其它等效声学反射结构。
40(35)/60(65)：底电极(引脚)/顶电极(引脚)，可采用钼、 钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
50：压电层薄膜，可选氮化铝，氧化锌，PZT等材料并包含上述材料的一定原子比的稀土元素掺杂材料。
图7C示出了图7A对应的谐振器的有效区域AR的温度梯度分布示意图(其中暗处表示低温，而亮处表示高温)，温度最高点位于图中的Σ。
当上述谐振器工作时，一部分声振动能量和电能会不可避免的转化成热能，随着谐振器功率的提升，发热问题变得日益显著，导致谐振器工作温度过高。高温不仅对谐振器的电学特性造成不利影响，同时高温还会加速器件各组成部分的老化和损毁。发热问题在谐振器的有效区域的中心区域尤其明显。
发明内容
本发明提出一种置于体波谐振器有效声学区域俯视图中心或其附近的功率增强结构，该结构可使谐振器中温度最高点及其附近的振动频率偏离谐振点，从而达到降低谐振器温度的目的。
根据本发明的实施例的一个方面，提出了一种体声波谐振器，包括：
基底；
声学镜空腔；
底电极；
顶电极；
压电层，
其中：
声学镜空腔、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；且
所述声学镜空腔内设置有支撑结构，所述支撑结构的下端设置于声学镜空腔的底部，所述支撑结构的上端在所述有效区域的高温区域与所述有效区域的下侧连接或接触，所述高温区域是指以有效区域的质心为圆心、r为半径的区域，所述半径r为高温区域所在有效区域的等效圆的半径的50％，所述等效圆为：以该有效区域的质心为圆心且圆的面积等于有效区 域的面积的圆。
可选的，所述半径r为高温区域所在有效区域的等效圆的半径的20％。
可选的，所述支撑结构的上端仅在所述有效区域的高温区域与所述有效区域的下侧连接或接触。
可选的，所述支撑结构为锥台形结构，其上端的横截面面积小于下端的横截面面积，所述锥台形结构的顶部形成支撑面，该支撑面与底电极的底侧连接。
可选的，所述锥台形结构为四棱柱结构或三棱柱结构或者圆锥台结构。
可选的，所述支撑结构的上端具有支撑面，该支撑面与底电极的底侧连接；所述支撑结构的下端具有固定面，该固定面与声学镜空腔的底部连接；所述支撑结构还包括连接在支撑面与固定面之间的弹性连接部，所述弹性连接部提供使得支撑面向上以抵接底电极的弹力。
可选的，所述弹性连接部为翼状部。
可选的，所述翼状部与固定面之间形成有第一斜角，所述第一斜角在10-80度的范围内。
可选的，所述翼状部为梯形，该梯形的上底连接到所述支撑面，该梯形的下底连接到所述固定面。
可选的，所述翼状部为蛇形。进一步的，所述蛇形的与所述支撑面接触的一端小于所述蛇形的与固定面接触的一端。
可选的，所述翼状部包括在谐振器的俯视图中等角度间隔开的多个翼状部，所述多个翼状部具有相同的第一斜角；且所述固定面为环形固定面或者所述固定面包括在谐振器的俯视图中等角度间隔开的多个固定面，所述多个固定面与所述多个翼状部分别对应。
可选的，所述支撑面仅具有一个支撑面，且所述多个翼状部均连接到所述一个支撑面；或者所述支撑面具有多个支撑面，且所述多个翼状部分别与所述多个支撑面连接。
可选的，所述翼状部包括在谐振器的俯视图中镜像对称布置的两个翼状部，所述支撑面仅具有一个支撑面，且所述两个翼状部均连接到所述一个支撑面。
可选的，所述翼状部包括在谐振器的俯视图中旋转对称布置的多个翼 状部，所述支撑面仅具有一个支撑面，且所述多个翼状部均连接到所述一个支撑面。
可选的，所述支撑结构为相同截面的柱形结构，所述柱形结构的顶面形成支撑面，该支撑面与底电极的底侧连接。
可选的，所述支撑结构为导热结构，适于将来自有效区域的高温区域的热量自支撑结构传导到基底。
可选的，所述支撑结构与所述底电极形成面连接，且所述支撑结构与所述声学镜空腔的底部形成面连接。
可选的，所述支撑结构与所述有效区域的下侧的接触面积不大于有效区域的面积的1％；或者所述支撑结构与所述有效区域的下侧的接触面的最长边的边长不超过有效区域的最长边长的1/10；或者所述支撑结构与所述有效区域的下侧的接触面的最长边或直径的长度范围为0.1-20μm。进一步的，所述支撑结构与所述有效区域的下侧的接触面积不大于有效区域的面积的0.1％；或者所述支撑结构与所述有效区域的下侧的接触面的最长边的边长不超过有效区域的最长边长的1/30。
可选的，所述支撑结构为第一支撑结构；且所述谐振器还包括多个辅助支撑结构，所述多个辅助支撑结构围绕所述第一支撑结构设置，所述辅助支撑结构的下端设置于声学镜空腔的底部，所述辅助支撑结构的上端与所述有效区域的下侧连接或接触。进一步的，所述多个辅助支撑结构分布在以有效区域的质心为圆心的至少一个圆周上，且在圆周上等角度间隔开。
可选的，所述支撑结构的高度的范围为H±1μm，其中H为对应声学镜空腔的深度。
根据本发明的实施例的再一方面，提出了一种滤波器，包括上述的谐振器。
根据本发明的实施例的还一方面，提出了一种电子设备，包括上述的谐振器，或者上述的滤波器。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其 中：
图1A为根据本发明的一个示例性实施例的体声波谐振器的示意性剖视图；
图1B为根据本发明的一个示例性实施例的图1A中声学镜空腔中设置的支撑结构的示意图；
图1C为根据本发明的一个示例性实施例的图1A中的支撑结构的示意图；
图1D为根据本发明的一个示例性实施例的图1A中的支撑结构的示意图；
图2A为根据本发明的一个示例性实施例的体声波谐振器的支撑结构的示意图；
图2B为图2A中的支撑结构的侧视图；
图3为根据本发明的一个示例性实施例的体声波谐振器的支撑结构的示意图；
图4A为根据本发明的一个示例性实施例的体声波谐振器的支撑结构的示意图；
图4B为图4A中的支撑结构的俯视示意图；
图5A为根据本发明的一个示例性实施例的体声波谐振器的支撑结构的示意图；
图5B为图5A中的支撑结构的俯视示意图；
图6A为根据本发明的一个示例性实施例的体声波谐振器的第一支撑结构和辅助支撑结构的示意图；
图6B为根据本发明的一个示例性实施例的辅助支撑结构的分布示意图；
图6C为根据本发明的一个示例性实施例的辅助支撑结构的分布示意图；
图7A为现有技术中的体声波谐振器的俯视图；
图7B为图7A中沿折线A1OA2的剖视图；
图7C为图7A对应的谐振器的有效区域AR的温度梯度分布示意图，其中暗处表示低温，而亮处表示高温，温度最高点位于图中的Σ。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
图1A为根据本发明的一个示例性实施例的体声波谐振器的示意性剖视图。
各部分细节说明如下：
10：基底，通常材料可选单晶硅，砷化镓，蓝宝石，石英等。
20：声学镜空腔。
30：支撑结构。
40(35)/60(65)：底电极(引脚)/顶电极(引脚)，可采用钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
50：压电层薄膜，可选氮化铝，氧化锌，PZT等材料并包含上述材料的一定原子比的稀土元素掺杂材料。
如图1A和1B所示，支撑结构30设置于述声学镜空腔20内，支撑结构30的下端设置于声学镜空腔20的底部，所述支撑结构的上端在所述有效区域的高温区域与所述底电极40的底侧连接，所述支撑结构30的下端与上端之间的高度为所述声学镜空腔的深度。
需要指出的是，在本发明中，“高温区域”是指以有效区域的质心为圆心、r为半径的区域，该半径r为所在有效区域的等效圆的半径的50％，进一步的20％，上述等效圆为：以该有效区域的质心为圆心且圆的面积等于有效区域的面积的圆。
在本发明中，支撑结构的上端可以仅仅一部分位于高温区域内，也 可以全部位于高温区域内，这均在本发明的保护范围之内。
由于谐振器的工作过程本质上是压电物质与场的相互作用，所以谐振器的热功率密度的空间分布和谐振器的有效区域物质的空间分布直接相关，并且对于有效区域为凸几何形状的谐振器，热功率密度最高的位置位于物质分布的中心(质心)附近。尽管在厚度方向上谐振器有效区域由金属电极层和压电层等不同物质构成，但由于通常各物质层的厚度都是均匀(或近似均匀)的，因此在俯视平面上，有效区域的等效面密度可以认为是均匀的。在上述情况下，有效区域的平面质心的位置即为该区域的平面几何中心。
由于支撑结构30，可以使得谐振器的温度最高点或其附近的振动频率偏离谐振点。这有助于降低谐振器的温度最高点或者其附近部分的温度，从而提升整个谐振器的功率容量。
在支撑结构30本身还具有传热功能的情况，有助于将底电极中的热量传导到基底，为谐振器的有效区域的散热提供了除谐振器边缘外的另外的散热通道，有助于进一步降低谐振器的温度，从而提高谐振器的功率容量。基于此，在本发明的一个实施例中，所述支撑结构为导热结构，适于将来自有效区域的高温区域的热量自支撑结构传导到基底。更进一步的，所述支撑结构与所述底电极形成面连接，且所述支撑结构与所述声学镜空腔的底部形成面连接。
图1A中仅仅是示意性的示出了支撑结构30设置在底电极与声学镜空腔的底部之间。下面具体描述支撑结构30的结构。
图1B为根据本发明的一个示例性实施例的图1A中声学镜空腔中设置的支撑结构的示意图，图1C为根据本发明的一个示例性实施例的图1A中的支撑结构的示意图。如图1B-1C所示，支撑结构为一个上小下大的四棱锥结构，该四棱锥结构的顶面为支撑面。
参见图1C，锥形四棱柱顶部的与下电极的接触面为矩形，该矩形的一边长度a0范围0.1-20μm，优选范围0.1-10μm，另一边长度b0范围0.1-20μm，优选范围0.1-10μm，棱柱侧面与竖直方向第一夹角α0范围10-80度，第二夹角β0范围10-80度；棱柱高度为h01的范围为H±1μ m，其中H为对应谐振器声学镜空腔的深度。
图1B示出的支撑结构为四棱锥台的形状，但是本发明不限于此。例如，如图1D中所示，支撑结构为圆锥台的形状。如图1D所示，锥形圆柱的顶面和底面均为圆形，顶面圆形半径r0范围0.05-10μm，优选范围0.05-5μm，底面圆形半径R0范围1-50μm，锥形圆柱高度h02的范围为H±1μm，其中H为对应谐振器声学镜空腔的深度。
此外，虽然没有示出，支撑结构也可以为例如三棱锥台的形状；或者，支撑结构为具有相同截面的柱形结构，例如圆柱体、方形柱体等。
除了图1A-1D中示出的支撑结构之外，支撑结构还可以为其他形式，尤其是支撑结构在谐振器的厚度方向上具有弹性。如此，可以减小支撑结构在谐振器的厚度方向上的刚性，从而减少支撑结构对于谐振器的冲击，减少能量损失。
图2A为根据本发明的一个示例性实施例的体声波谐振器的支撑结构的示意图；图2B为图2A中的支撑结构的侧视图。
图2A中示出的是支撑结构30中，支撑结构具有矩形基础部，基础部的第一边长a3范围10-50μm，第二边长b3范围10-50μm；顶部接触部为矩形，接触部的第一边长a1范围0.1-20μm，优选范围0.1-10μm，第二边长b1范围0.1-20μm，优选范围0.1-10μm；此外在基础部和接触部之间由倾斜的连接部，该连接部为梯形，梯形下底长度b2范围2-40μm，梯形上底与接触部的第二边重合。
图2B所示为图4A中结构的侧视图，其中结构的连接部与水平方向夹角α1范围10-80度；整体高度h03的范围为H±1μm，其中H为对应谐振器声学镜空腔的深度。支撑结构的厚度T1范围为0.01-0.5μm。
需要指出的是，支撑结构的高度h03的范围H±1μm不仅适用于本实施例，也可以适用于本发明的其他实施例。
基于以上，在本发明中，所述支撑结构的上端具有支撑面，该支撑面与底电极的底侧连接；所述支撑结构的下端具有固定面，该固定面与声学镜空腔的底部连接；所述支撑结构还包括连接在支撑面与固定面之间的弹性连接部，所述弹性连接部提供使得支撑面向上以抵接底电极的弹力。如 图2A所示，所述弹性连接部可为翼状部。如图2B所示，所述翼状部与固定面之间形成有第一斜角α1，所述第一斜角在10-80度的范围内。
如图2A所示，所述翼状部为梯形，该梯形的上底连接到所述支撑面，该梯形的下底连接到所述固定面。
图3为根据本发明的一个示例性实施例的体声波谐振器的支撑结构的示意图。如图3所示，弹性连接部或翼状部为蛇形，以进一步减小其刚性，并增加其自由度。如图3所示，所述蛇形的与所述支撑面接触的一端小于所述蛇形的与固定面接触的一端，换言之，在图3中，蛇形的翼状部的下端较大，而上端较小，这有利于翼状部变形。
图2A和图3仅仅示出了具有单个翼状部的支撑结构，但是本发明不限于此。
图4A为根据本发明的一个示例性实施例的体声波谐振器的支撑结构的示意图；图4B为图4A中的支撑结构的俯视示意图。图4A和4B示出了镜像对称的支撑结构。为增强支撑结构的稳定性，可将图2A的结构进行镜像延拓，从而形成图4A中的对称性功率增强结构。从所述结构的俯视图图4B中可知，该支撑结构关于直线L1L2和L3L4对称。换言之，在图4A和4B的实施例中，所述翼状部包括在谐振器的俯视图中镜像对称布置的两个翼状部，所述支撑面仅具有一个支撑面，且所述两个翼状部均连接到所述一个支撑面。
图5A为根据本发明的一个示例性实施例的体声波谐振器的支撑结构的示意图；图5B为图5A中的支撑结构的俯视示意图。图5A和图5B示出了支撑结构为旋转对称结构的形式。具体的，将支撑结构制成如图5A所示的结构，该结构具有一环形基础部，一圆形接触部以及3个扇形连接部。支撑结构总体厚度为T2，T2范围0.01-0.5μm，总体高度h04范围H±1μm，其中H为对应谐振器声学镜空腔的深度。图5B为图5A中结构的俯视图，其中示出了所述支撑结构的关键尺寸，基础部圆环内内径R1范围1-50μm，外半径R2范围5-100μm；接触部圆形半径r1范围0.05-10μm，优选范围0.05-5μm；扇形连接部俯视投影的夹角α2范围10-40度。该结构降低了结构刚性，并具有更高的稳定性。换言之，在图5A和5B的实施例 中，所述翼状部包括在谐振器的俯视图中旋转对称布置的多个翼状部，所述支撑面仅具有一个支撑面，且所述多个翼状部均连接到所述一个支撑面。
虽然在以上附图所示的实施例中，仅仅示出了一个支撑面，但是，本发明不限于此，也可以设置多个支撑面，不过，这些支撑面均连接到有效区域的高温区域。
此外，本发明也可以在上述的支撑结构之外设置另外的辅助支撑结构，如图6A-6C所示。
参见图6A，除了在发热中心区域采用支撑结构30之外，还在其周围添加若干辅助支撑结构31。多支撑结构的优点为：通过增加接触面数量可进一步增强热传导能力；增加结构稳定性；多支撑结构采用一定的分布方式还可起到抑制谐振器中寄生模式振动的作用。
如图6B所示，可使支撑结构与谐振器有效声学区域的接触面(图中阴影标注的圆形区域，此外也可使用矩形等)，分布在以中心接触面的几何中心为圆心的若干个同心圆周上，同心圆由内向外半径分别为Rm1,Rm2,Rm3等等。其中最内侧圆的半径范围1-50μm，且由内向外每个圆的半径与其相邻内侧圆半径差异范围为1-50μm。此外若干个接触面还沿多个径向分布，且所述径向等分圆周，例如图6B中径向将圆周4等分，而图6C中为5等分，当然等分数量还可为其它整数如3,6,8，9…等等。
支撑结构与有效区域的接触面积过小，散热效果不明显，但是，面积过大则导致谐振器Q值降低、同时还可造成寄生模式增强等负面效果。因此，还需要指出的是，在本发明中，可以限制支撑结构与有效区域的下侧或者与有效区域中的底电极的接触面积。具体的，所述支撑结构与所述有效区域的下侧的接触面积不大于有效区域的面积的1％，进一步的，不大于0.1％；或者所述支撑结构与所述有效区域的下侧的接触面的最长边的边长不超过有效区域的最长边长的1/10，进一步的，不超过1/30；或者所述支撑结构与所述有效区域的下侧的接触面的最长边或直径的长度范围为0.1-20μm。
此外，在本发明中，对于数值范围的取值，除了可以为端点值(包括端点值的情况下)或者范围内邻近端点值(不包括端点值的情况下)， 还可以例如是范围的中值等。
基于以上，本发明提出了如下技术方案：
1、一种体声波谐振器，包括：
基底；
声学镜；
底电极；
顶电极；
压电层，
其中：
声学镜、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；且
所述声学镜空腔内设置有支撑结构，所述支撑结构的下端设置于声学镜空腔的底部，所述支撑结构的上端在所述有效区域的高温区域与所述有效区域的下侧连接或接触，所述高温区域是指以有效区域的质心为圆心、r为半径的区域，所述半径r为高温区域所在有效区域的等效圆的半径的50％，所述等效圆为：以该有效区域的质心为圆心且圆的面积等于有效区域的面积的圆。
2、一种滤波器，包括上述的谐振器。
3、一种电子设备，包括上述的谐振器，或者上述的滤波器。需要指出的是，这里的电子设备，包括但不限于射频前端、滤波放大模块等中间产品，以及手机、WIFI、无人机等终端产品。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (25)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜空腔；
    底电极；
    顶电极；
    压电层，
    其中：
    声学镜空腔、底电极、压电层、顶电极在基底的厚度方向重叠的区域为谐振器的有效区域；且
    所述声学镜空腔内设置有支撑结构，所述支撑结构的下端设置于声学镜空腔的底部，所述支撑结构的上端在所述有效区域的高温区域的至少一部分与所述有效区域的下侧连接或接触，所述高温区域是指以有效区域的质心为圆心、r为半径的区域，所述半径r为高温区域所在有效区域的等效圆的半径的50％，所述等效圆为：以该有效区域的质心为圆心且圆的面积等于有效区域的面积的圆。
  2. 根据权利要求1所述的谐振器，其中：
    所述半径r为高温区域所在有效区域的等效圆的半径的20％。
  3. 根据权利要求1所述的谐振器，其中：
    所述支撑结构的上端仅在所述有效区域的高温区域与所述有效区域的下侧连接或接触。
  4. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述支撑结构为锥台形结构，其上端的横截面面积小于下端的横截面面积，所述锥台形结构的顶部形成支撑面，该支撑面与底电极的底侧连接。
  5. 根据权利要求4所述的谐振器，其中：
    所述锥台形结构为四棱柱结构或三棱柱结构或者圆锥台结构。
  6. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述支撑结构的上端具有支撑面，该支撑面与底电极的底侧连接；所述支撑结构的下端具有固定面，该固定面与声学镜空腔的底部连接；所述支撑结构还包括连接在支撑面与固定面之间的弹性连接部，所述弹性连接 部提供使得支撑面向上以抵接底电极的弹力。
  7. 根据权利要求6所述的谐振器，其中：
    所述弹性连接部为翼状部。
  8. 根据权利要求7所述的谐振器，其中：
    所述翼状部与固定面之间形成有第一斜角，所述第一斜角在10-80度的范围内。
  9. 根据权利要求7或8所述的谐振器，其中：
    所述翼状部为梯形，该梯形的上底连接到所述支撑面，该梯形的下底连接到所述固定面。
  10. 根据权利要求7或8所述的谐振器，其中：
    所述翼状部为蛇形。
  11. 根据权利要求10所述的谐振器，其中：
    所述蛇形的与所述支撑面接触的一端小于所述蛇形的与固定面接触的一端。
  12. 根据权利要求7或8所述的谐振器，其中：
    所述翼状部包括在谐振器的俯视图中等角度间隔开的多个翼状部，所述多个翼状部具有相同的第一斜角；且
    所述固定面为环形固定面或者所述固定面包括在谐振器的俯视图中等角度间隔开的多个固定面，所述多个固定面与所述多个翼状部分别对应。
  13. 根据权利要求12所述的谐振器，其中：
    所述支撑面仅具有一个支撑面，且所述多个翼状部均连接到所述一个支撑面；或者
    所述支撑面具有多个支撑面，且所述多个翼状部分别与所述多个支撑面连接。
  14. 根据权利要求13所述的谐振器，其中：
    所述翼状部包括在谐振器的俯视图中镜像对称布置的两个翼状部，所述支撑面仅具有一个支撑面，且所述两个翼状部均连接到所述一个支撑面。
  15. 根据权利要求13所述的谐振器，其中：
    所述翼状部包括在谐振器的俯视图中旋转对称布置的多个翼状部，所述支撑面仅具有一个支撑面，且所述多个翼状部均连接到所述一个支撑面。
  16. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述支撑结构为相同截面的柱形结构，所述柱形结构的顶面形成支撑面，该支撑面与底电极的底侧连接。
  17. 根据权利要求1-16中任一项所述的谐振器，其中：
    所述支撑结构为导热结构，适于将来自有效区域的高温区域的热量自支撑结构传导到基底。
  18. 根据权利要求17所述的谐振器，其中：
    所述支撑结构与所述底电极形成面连接，且所述支撑结构与所述声学镜空腔的底部形成面连接。
  19. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述支撑结构与所述有效区域的下侧的接触面积不大于有效区域的面积的1％；或者
    所述支撑结构与所述有效区域的下侧的接触面的最长边的边长不超过有效区域的最长边长的1/10；或者
    所述支撑结构与所述有效区域的下侧的接触面的最长边或直径的长度范围为0.1-20μm。
  20. 根据权利要求19所述的谐振器，其中：
    所述支撑结构与所述有效区域的下侧的接触面积不大于有效区域的面积的0.1％；或者
    所述支撑结构与所述有效区域的下侧的接触面的最长边的边长不超过有效区域的最长边长的1/30。
  21. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述支撑结构为第一支撑结构；且
    所述谐振器还包括多个辅助支撑结构，所述多个辅助支撑结构围绕所述第一支撑结构设置，所述辅助支撑结构的下端设置于声学镜空腔的底部，所述辅助支撑结构的上端与所述有效区域的下侧连接或接触。
  22. 根据权利要求21所述的谐振器，其中：
    所述多个辅助支撑结构分布在以有效区域的质心为圆心的至少一个圆周上，且在圆周上等角度间隔开。
  23. 根据权利要求1-22中任一项所述的谐振器，其中：
    所述支撑结构的高度的范围为H±1μm，其中H为对应声学镜空腔的深度。
  24. 一种滤波器，包括：
    根据权利要求1-23中任一项所述的体声波谐振器。
  25. 一种电子设备，包括根据权利要求1-23中任一项所述的体声波谐振器，或者根据权利要求24所述的滤波器。
PCT/CN2020/086565 2019-08-15 2020-04-24 具有空腔支撑结构的体声波谐振器、滤波器和电子设备 WO2021027320A1 (zh)

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