WO2021022576A1 - Détecteur photoélectrique au germanium de type guide d'ondes utilisant un cristal photonique, et procédé de préparation - Google Patents

Détecteur photoélectrique au germanium de type guide d'ondes utilisant un cristal photonique, et procédé de préparation Download PDF

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Publication number
WO2021022576A1
WO2021022576A1 PCT/CN2019/100559 CN2019100559W WO2021022576A1 WO 2021022576 A1 WO2021022576 A1 WO 2021022576A1 CN 2019100559 W CN2019100559 W CN 2019100559W WO 2021022576 A1 WO2021022576 A1 WO 2021022576A1
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germanium
photonic crystal
silicon
region
waveguide
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PCT/CN2019/100559
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English (en)
Chinese (zh)
Inventor
汪巍
方青
涂芝娟
曾友宏
蔡艳
余明斌
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上海新微技术研发中心有限公司
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Priority claimed from CN201910717527.9A external-priority patent/CN112331725A/zh
Priority claimed from CN201921254955.4U external-priority patent/CN210040212U/zh
Application filed by 上海新微技术研发中心有限公司 filed Critical 上海新微技术研发中心有限公司
Publication of WO2021022576A1 publication Critical patent/WO2021022576A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of semiconductor manufacturing and optical communication, and particularly relates to a waveguide type germanium photodetector based on a photonic crystal and a preparation method thereof.
  • Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for optical communication, ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, and infrared remote sensing.
  • Germanium (Ge) photodetectors because of their easy integration with silicon (Si), have a wide range of applications in the fields of optical communications, optical interconnection, and optical sensing.
  • germanium (Ge) materials and silicon (Si) materials, and it is extremely challenging to epitaxially grow high-quality germanium (Ge) materials.
  • Recent research shows that in the narrow channel epitaxial growth of germanium (Ge) material, linear dislocations will be annihilated on the sidewall of the channel, thereby ensuring the epitaxial growth of high-quality germanium (Ge) material.
  • the detector Limited by the relatively low absorption coefficient of germanium (Ge) materials in the C and L communication bands, in order to achieve high responsivity, the detector must be long enough, which makes it difficult to further optimize the high-speed characteristics and dark current of the detector.
  • the purpose of the present invention is to provide a photonic crystal-based waveguide type germanium photodetector and a preparation method for solving the problem of the capacitance and dark current of the germanium photodetector in the prior art. Optimization.
  • the present invention provides a waveguide type germanium photodetector based on a photonic crystal.
  • the germanium photodetector includes: a silicon waveguide structure; a germanium photodetector connected to the silicon waveguide structure, The germanium absorption area of the germanium photodetector and the peripheral silicon material area on the periphery of the germanium absorption area have dielectric materials arranged periodically to form a photonic crystal structure with a slow light effect.
  • the silicon waveguide structure is connected to a peripheral silicon material region of the photonic crystal structure, and the germanium absorption region is directly opposite to the silicon waveguide structure.
  • the light in the peripheral silicon material region enters the germanium absorption region through direct coupling or evanescent wave coupling.
  • the germanium photodetector includes: a germanium absorption region with a peripheral silicon material region on the periphery of the germanium absorption region, the germanium absorption region having opposite first and second ends, and opposite first sides And the second side, the first end of the germanium absorption region is opposite to the silicon waveguide structure; the first contact layer and the second contact layer are respectively formed on the first side and the second side of the germanium absorption region In the peripheral silicon material area; a first electrode and a second electrode are formed on the first contact layer and the second contact layer, respectively.
  • the material of the germanium absorption region includes one of SiGe, Ge, GeSn, and GePb.
  • the dielectric material is cylindrical and vertically penetrates the germanium absorption zone and the peripheral silicon material zone.
  • the dielectric material, the germanium absorption region and the peripheral silicon material region form a resonant cavity with a periodic structure.
  • the dielectric material includes silicon dioxide.
  • the present invention also provides a method for preparing a waveguide type germanium photodetector based on photonic crystals.
  • the preparation method includes the steps: step 1), providing an SOI substrate, and etching on the top silicon layer of the SOI substrate A silicon waveguide structure; step 2), etching a germanium-based material selective epitaxial region on the top silicon layer of the SOI substrate, and a part of the top silicon layer bottom layer is left at the bottom of the germanium-based material selective epitaxial region; Step 3), selectively epitaxially grow a germanium absorption region in the germanium-based material selective epitaxial region, and use ion implantation and annealing methods to form a first contact layer and a second contact in the peripheral silicon material region on the periphery of the germanium absorption region Layer; step 4), forming periodically arranged grooves in the germanium absorption area and the surrounding silicon material area by photolithography and etching processes, and filling the grooves with a dielectric material to form a slow light
  • the height of the germanium absorption region is greater than the depth of the germanium-based material selective epitaxial region.
  • the waveguide type germanium photodetector based on photonic crystal and the preparation method of the present invention have the following beneficial effects:
  • the invention introduces the photonic crystal structure into the waveguide type germanium photodetector. Since the resonant cavity formed by the periodic structure has the effect of slow light, the absorption efficiency of the detector can be improved, the size of the detector can be reduced, and low dark current and low Capacitive and highly responsive photodetectors are prepared. At the same time, the periodic germanium/dielectric layer (such as silicon dioxide, etc.) structure can effectively reduce the stress of the germanium material and help improve the quality of the germanium material.
  • the periodic germanium/dielectric layer such as silicon dioxide, etc.
  • the invention can realize more efficient light absorption efficiency, and realizes the preparation of low dark current, low capacitance and high responsivity photodetectors by reducing the size of the device.
  • Figures 1 to 3 show schematic structural diagrams of waveguide type germanium photodetectors based on photonic crystals according to embodiments of the present invention.
  • Figure 2 shows a schematic cross-sectional structure at AA' of Figure 1 and
  • Figure 3 shows Figure 1 is a schematic cross-sectional structure at B-B'.
  • FIG. 4 is a schematic diagram showing the structure of each step of the preparation method of the waveguide type germanium photodetector based on the photonic crystal according to the embodiment of the present invention.
  • spatial relation words such as “below”, “below”, “below”, “below”, “above”, “up”, etc. may be used herein to describe an element or The relationship between a feature and other elements or features. It will be understood that these spatial relationship terms are intended to encompass directions other than the directions depicted in the drawings of the device in use or operation.
  • a layer when referred to as being “between” two layers, it may be the only layer between the two layers, or one or more intervening layers may also be present.
  • the described structure where the first feature is "above" the second feature may include an embodiment in which the first and second features are formed in direct contact, or may include other features formed on the first and second features.
  • the embodiment between the second feature, so that the first and second features may not be in direct contact.
  • Fig. 2 is a schematic cross-sectional structure diagram of Fig. 1 at A-A'
  • Fig. 3 is a schematic cross-sectional structure diagram of Fig. 1 at B-B'.
  • This embodiment provides a waveguide type germanium photodetector based on a photonic crystal.
  • the waveguide type germanium photodetector includes a silicon waveguide structure 10 and a germanium photodetector 20.
  • the silicon waveguide structure 10 and the germanium photodetector 20 are prepared based on an SOI substrate.
  • the top silicon layer 212 of the SOI substrate is partially removed to form a germanium-based material selective epitaxial region.
  • a partial thickness of the top silicon layer and bottom layer remains at the bottom of the epitaxial region, and the germanium-based material selective epitaxial region is used for the epitaxial preparation of the germanium absorption region 202.
  • the germanium photodetector 20 is connected to the silicon waveguide structure 10, and the germanium absorption region 202 of the germanium photodetector 20 and the peripheral silicon material region 203 surrounding the germanium absorption region 202 have dielectric materials arranged periodically 201 to form a photonic crystal structure with slow light effect.
  • the germanium photodetector 20 includes a germanium absorption region 202, a first contact layer 204 and a second contact layer 205, and a first electrode 206 and a second electrode 207.
  • the germanium absorption region 202 is formed in the germanium-based material selective epitaxial region, and the germanium absorption region 202 has a peripheral silicon material region 203 on the periphery.
  • the germanium absorption region 202 has opposite first and second ends, and opposite first and second sides, and the first end of the germanium absorption region 202 is disposed opposite to the silicon waveguide structure 10, specifically As shown in FIG. 1, the silicon waveguide structure 10 is connected to the peripheral silicon material region 203 of the photonic crystal structure, and the germanium absorption region 202 is facing the silicon waveguide structure 10.
  • the material of the germanium absorption region 202 may be one of SiGe, Ge, GeSn, and GePb.
  • the material of the germanium absorption region 202 can be selected as SiGe to reduce the lattice mismatch between the germanium absorption region 202 and the top silicon layer 212 and improve the material quality of the germanium absorption region 202 .
  • the first contact layer 204 and the second contact layer 205 are respectively formed in the peripheral silicon material region 203 on the first side and the second side of the germanium absorption region 202.
  • the first contact layer 204 can be heavily doped with P-type silicon by performing P-type ion implantation on the peripheral silicon material region 203 on the first side of the germanium absorption region 202 to serve as the first contact layer 204;
  • the second contact layer 205 can form heavily doped N-type silicon by performing N-type ion implantation on the peripheral silicon material region 203 on the second side of the germanium absorption region 202 to serve as the second contact layer 205.
  • Both a contact layer 204 and the second contact layer 205 are in direct contact with the germanium absorption region 202.
  • the first electrode 206 and the second electrode 207 are formed on the first contact layer 204 and the second contact layer 205 respectively.
  • the first electrode 206 and the second electrode 207 can be formed by metal deposition, photolithography and etching processes; for another example, the first electrode 206 and the second electrode 207 can be formed by a metal lift-off process without Limited to the examples listed here.
  • the light in the peripheral silicon material region 203 enters the germanium absorption region 202 through direct coupling or evanescent wave coupling to reduce light loss.
  • the dielectric material 201 is cylindrical and vertically penetrates the germanium absorption region 202 and the peripheral silicon material region 203.
  • the dielectric material 201, the germanium absorption region 202 and the peripheral silicon material region 203 form a resonant cavity with a periodic structure.
  • the dielectric material 201 may be silicon dioxide.
  • the dielectric material 201 can also be selected as air, vacuum or silicon oxynitride and other refractive index materials, and is not limited to the examples listed here.
  • the dielectric material 201 penetrates the germanium absorption region 202, which can effectively reduce the stress of the germanium absorption region 202.
  • the spacing between the dielectric materials 201 in the germanium absorption region 202 is greater than the spacing between the dielectric materials 201 in the peripheral silicon material region 203, so that The absorption effect of the germanium absorption region 202 is ensured.
  • a reflective structure 30 having a photonic crystal structure is connected to the second end of the germanium photodetector, which can achieve a reflection effect and further increase the absorption efficiency of the germanium photodetector 20.
  • the present invention introduces a photonic crystal structure in the waveguide type germanium photodetector 20. Since the resonant cavity formed by the periodic structure has a slow light effect, in the photonic crystal, the guided mode is dispersed by the periodic structure of the photonic crystal, and the group velocity will be greatly increased. Reduce to achieve the slow light effect of photonic crystals.
  • the photonic crystal of the present invention has the advantages of flexible structure design, small size, easy integration with existing optical communication devices, and easy control. It can realize optical buffering, thereby improving the absorption efficiency of the detector, reducing the size of the detector, and making it easier to achieve low darkness. Preparation of current, low capacitance and high responsivity photodetectors.
  • the periodic germanium/dielectric layer such as silicon dioxide, etc.
  • the periodic germanium/dielectric layer can effectively reduce the stress of the germanium material and help improve the quality of the germanium material.
  • this embodiment also provides a method for preparing a waveguide type germanium photodetector based on a photonic crystal, and the preparation method includes the steps:
  • step 1) S11 is performed, an SOI substrate is provided, and the silicon waveguide structure 10 is etched on the top silicon layer 212 of the SOI substrate.
  • the SOI substrate specifically includes a bottom silicon layer 210, an insulating layer 211, and a top silicon layer 212.
  • the silicon waveguide structure 10 is formed in the top silicon layer 212 through photolithography and etching processes.
  • step 2) S12 is then performed.
  • a germanium-based material selective epitaxial region is etched on the top silicon layer 212 of the SOI substrate, and a part of the thickness of the germanium-based material selective epitaxial region remains at the bottom The top silicon layer and the bottom layer.
  • a dielectric layer may be first deposited on the top silicon layer 212 of the SOI substrate as a hard mask, and then a transfer window may be formed in the dielectric layer through a photolithography and etching process, and then the top may be further etched.
  • the silicon layer 212 is used to etch a germanium-based material selective epitaxial region in the top silicon layer 212. A part of the thickness of the bottom layer of the top silicon layer remains at the bottom of the germanium-based material selective epitaxial region to facilitate the subsequent epitaxial growth of the germanium absorption region 202.
  • the germanium absorption region 202 is selectively epitaxially grown on the germanium-based material selective epitaxial region, and ion implantation and annealing methods are used to form a silicon material on the periphery of the germanium absorption region 202 A first contact layer 204 and a second contact layer 205 are formed in the region 203.
  • the material of the germanium absorption region 202 may be one of SiGe, Ge, GeSn, and GePb.
  • the material of the germanium absorption region 202 can be selected as SiGe to reduce the lattice mismatch between the germanium absorption region 202 and the top silicon layer 212 and improve the material quality of the germanium absorption region 202 .
  • the height of the germanium absorption region 202 is greater than the depth of the germanium-based material selective epitaxial region, so as to further improve the absorption efficiency of the germanium absorption region 202 without increasing the length of the germanium absorption region.
  • the first contact layer 204 can be heavily doped with P-type silicon by performing P-type ion implantation on the peripheral silicon material region 203 on the first side of the germanium absorption region 202 to serve as the first contact layer 204;
  • the second contact layer 205 can form heavily doped N-type silicon by performing N-type ion implantation on the peripheral silicon material region 203 on the second side of the germanium absorption region 202 to serve as the second contact layer 205.
  • Both a contact layer 204 and the second contact layer 205 are in direct contact with the germanium absorption region 202.
  • step 4) S14 is then performed.
  • Periodically arranged grooves are formed in the germanium absorption region 202 and the surrounding silicon material region 203 through photolithography and etching processes, and dielectric is filled in the grooves Material 201 to form a photonic crystal structure with slow light effect.
  • the groove and the dielectric material 201 are cylindrical and vertically penetrate the germanium absorption region 202 and the peripheral silicon material region 203.
  • the dielectric material 201, the germanium absorption region 202 and the peripheral silicon material region 203 form a resonant cavity with a periodic structure.
  • the dielectric material 201 may be silicon dioxide.
  • the dielectric material 201 can also be selected as other refractive index materials such as silicon oxynitride, and is not limited to the examples listed here.
  • the dielectric material 201 penetrates the germanium absorption region 202, and during the process of forming the periodically arranged grooves, the stress of the germanium absorption region can be released, thereby effectively reducing the stress of the germanium absorption region 202.
  • step 5 S15 is finally performed to define a first electrode 206 area and a second electrode 207 area in the first contact layer 204 and the second contact layer 205 by photolithography and etching methods, And the first electrode 206 and the second electrode 207 are formed.
  • first electrode 206 and the second electrode 207 can be formed by metal deposition, photolithography and etching processes; for another example, the first electrode 206 and the second electrode 207 can be formed by a metal lift-off process without Limited to the examples listed here.
  • the first electrode 206 and the second electrode 207 may respectively form an ohmic contact with the first contact layer 204 and the second contact layer 205 through thermal annealing or the like, so as to reduce the resistance and the parasitic capacitance.
  • the waveguide type germanium photodetector based on photonic crystal and the preparation method of the present invention have the following beneficial effects:
  • the invention introduces the photonic crystal structure into the waveguide type germanium photodetector. Since the resonant cavity formed by the periodic structure has the effect of slow light, the absorption efficiency of the detector can be improved, the size of the detector can be reduced, and low dark current and low Capacitive and highly responsive photodetectors are prepared. At the same time, the periodic germanium/dielectric layer (such as silicon dioxide, etc.) structure can effectively reduce the stress of the germanium material and help improve the quality of the germanium material.
  • the periodic germanium/dielectric layer such as silicon dioxide, etc.
  • the present invention can realize more efficient light absorption efficiency, and can realize the preparation of low dark current, low capacitance and high response photodetector by reducing the size of the device.
  • the present invention effectively overcomes various shortcomings in the prior art and has high industrial value.

Abstract

La présente invention concerne un détecteur photoélectrique au germanium de type guide d'ondes utilisant un cristal photonique, comprenant : une structure de guide d'ondes en silicium (10) ; et un détecteur photoélectrique au germanium (20) relié à la structure de guide d'ondes en silicium (10), des matériaux diélectriques (201) étant périodiquement disposés dans une région d'absorption de germanium (202) du détecteur photoélectrique au germanium (20) et dans une région de matériau de silicium périphérique (203) à la périphérie de la région d'absorption de germanium (202), de manière à former une structure de cristal photonique ayant un effet de lumière lente. Par rapport aux détecteurs photoélectriques au germanium de type guide d'ondes classiques, le détecteur photoélectrique au germanium de type guide d'ondes employant un cristal photonique fournit une efficacité d'absorption de lumière améliorée, et facilite la réduction de la taille du dispositif de façon à obtenir un détecteur photoélectrique ayant de faibles courants d'obscurité, une faible capacité et une sensibilité élevée.
PCT/CN2019/100559 2019-08-05 2019-08-14 Détecteur photoélectrique au germanium de type guide d'ondes utilisant un cristal photonique, et procédé de préparation WO2021022576A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201921254955.4 2019-08-05
CN201910717527.9A CN112331725A (zh) 2019-08-05 2019-08-05 基于光子晶体的波导型锗光电探测器及制备方法
CN201921254955.4U CN210040212U (zh) 2019-08-05 2019-08-05 基于光子晶体的波导型锗光电探测器
CN201910717527.9 2019-08-05

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Cited By (2)

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CN111739972A (zh) * 2020-07-01 2020-10-02 中国科学院上海技术物理研究所 一种双面环形Ge基长波红外和太赫兹探测器和制备方法
CN115308834A (zh) * 2022-08-10 2022-11-08 松山湖材料实验室 集成光收发芯片、光电子器件和光收发系统

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CN105070779A (zh) * 2015-07-07 2015-11-18 中国科学院半导体研究所 具有亚波长光栅结构的面入射硅基锗光电探测器及其制备方法
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US20100330727A1 (en) * 2007-10-30 2010-12-30 Hill Craig M Method for Fabricating Butt-Coupled Electro-Absorptive Modulators
CN201885758U (zh) * 2010-11-19 2011-06-29 深圳信息职业技术学院 一种雪崩光电探测器及光能检测装置
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111739972A (zh) * 2020-07-01 2020-10-02 中国科学院上海技术物理研究所 一种双面环形Ge基长波红外和太赫兹探测器和制备方法
CN111739972B (zh) * 2020-07-01 2023-11-10 中国科学院上海技术物理研究所 一种双面环形Ge基长波红外和太赫兹探测器和制备方法
CN115308834A (zh) * 2022-08-10 2022-11-08 松山湖材料实验室 集成光收发芯片、光电子器件和光收发系统
CN115308834B (zh) * 2022-08-10 2024-02-09 松山湖材料实验室 集成光收发芯片、光电子器件和光收发系统

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