WO2021015028A1 - 接合装置、および接合方法 - Google Patents
接合装置、および接合方法 Download PDFInfo
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- WO2021015028A1 WO2021015028A1 PCT/JP2020/027185 JP2020027185W WO2021015028A1 WO 2021015028 A1 WO2021015028 A1 WO 2021015028A1 JP 2020027185 W JP2020027185 W JP 2020027185W WO 2021015028 A1 WO2021015028 A1 WO 2021015028A1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
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- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Definitions
- the present disclosure relates to a joining device and a joining method.
- Patent Document 1 discloses a joining device for joining substrates to each other.
- the present disclosure provides a technique for improving the bonding accuracy of substrates.
- the joining device includes a holding portion, a deforming portion, and a control portion.
- the holding portion holds the substrate to be joined.
- the deformed portion projects the central portion of the substrate held by the holding portion with respect to the outer peripheral portion of the substrate.
- the control unit adjusts the amount of protrusion of the substrate by the deformed portion for each substrate based on at least one of the thickness of the substrate, the temperature of the substrate, and the warp of the substrate when not held by the holding portion.
- the bonding accuracy of the substrate can be improved.
- FIG. 1 is a schematic diagram (No. 1) showing the configuration of the joining system according to the embodiment.
- FIG. 2 is a schematic diagram (No. 2) showing the configuration of the joining system according to the embodiment.
- FIG. 3 is a schematic diagram showing the configuration of the transition according to the embodiment.
- FIG. 4 is a schematic view showing a partial configuration of the joining device according to the embodiment.
- FIG. 5 is a schematic view showing the configurations of the first chuck portion and the second chuck portion according to the embodiment.
- FIG. 6 is a schematic view showing a state in which the second substrate according to the embodiment is curved.
- FIG. 7 is a flowchart illustrating the joining process according to the embodiment.
- FIG. 8 is a diagram showing a state in which the first substrate and the second substrate are curved in the joining process according to the embodiment.
- FIG. 1 is a schematic diagram (No. 1) showing the configuration of the joining system 1 according to the embodiment.
- FIG. 2 is a schematic diagram (No. 2) showing the configuration of the joining system 1 according to the embodiment.
- the bonding system 1 forms a polymerization substrate T by bonding the first substrate W1 and the second substrate W2.
- the first substrate W1 and the second substrate W2 are substrates in which a plurality of electronic circuits are formed on a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer.
- the first substrate W1 and the second substrate W2 are circular and have substantially the same diameter.
- One of the first substrate W1 and the second substrate W2 may be, for example, a substrate on which no electronic circuit is formed.
- the plate surface on the side to be joined to the second substrate W2 is referred to as a "joining surface", and the plate surface on the side opposite to the joining surface is referred to as a "non-bonding surface”. .. Further, among the plate surfaces of the second substrate W2, the plate surface on the side to be joined to the first substrate W1 is referred to as a "joining surface”, and the plate surface on the side opposite to the joining surface is referred to as a "non-bonding surface”.
- the joining system 1 includes a loading / unloading station 2 and a processing station 3.
- the carry-in / out station 2 is arranged on the negative side of the X-axis of the processing station 3 and is integrally connected to the processing station 3.
- the loading / unloading station 2 includes a mounting table 10 and a transport area 20.
- the mounting table 10 includes a plurality of mounting plates 11.
- Cassettes C1 to C4 for horizontally accommodating a plurality of (for example, 25) substrates are mounted on each mounting plate 11.
- the cassette C1 can accommodate a plurality of first substrates W1
- the cassette C2 can accommodate a plurality of second substrates W2
- the cassette C3 can accommodate a plurality of polymerization substrates T.
- the cassette C4 is, for example, a cassette for collecting a defective substrate.
- the number of cassettes C1 to C4 mounted on the mounting plate 11 is not limited to the one shown in the drawing.
- the transport area 20 is arranged adjacent to the X-axis positive direction side of the mounting table 10.
- the transport region 20 is provided with a transport path 21 extending in the Y-axis direction and a transport device 22 that can move along the transport path 21.
- the transport device 22 can move not only in the Y-axis direction but also in the X-axis direction, and can rotate around the Z-axis.
- the transport device 22 is formed between the cassettes C1 to C4 mounted on the mounting plate 11 and the third processing block G3 of the processing station 3, which will be described later, of the first substrate W1, the second substrate W2, and the polymerization substrate T. Carry out.
- the processing station 3 is provided with, for example, three processing blocks G1, G2, and G3.
- the first processing block G1 is arranged on the front side (Y-axis negative direction side in FIG. 1) of the processing station 3.
- the second processing block G2 is arranged on the back side of the processing station 3 (the positive direction side of the Y axis in FIG. 1)
- the third processing block G3 is on the loading / unloading station 2 side of the processing station 3 (X in FIG. 1). It is arranged on the negative axis side).
- a surface modifier 30 for modifying the joint surface of the first substrate W1 and the second substrate W2 is arranged.
- the surface modifying device 30 breaks the bond of SiO2 on the bonding surface of the first substrate W1 and the second substrate W2 to form a single-bonded SiO, thereby modifying the bonding surface so as to facilitate hydrophilicity thereafter. ..
- oxygen gas or nitrogen gas which is a processing gas
- nitrogen gas which is a processing gas
- the joint surfaces of the first substrate W1 and the second substrate W2 are plasma-treated and modified.
- a surface hydrophilic device 40 and a joining device 41 are arranged in the second processing block G2.
- the surface hydrophilization device 40 hydrophilizes the joint surfaces of the first substrate W1 and the second substrate W2 with, for example, pure water, and cleans the joint surfaces.
- the surface hydrophilization device 40 supplies pure water onto the first substrate W1 or the second substrate W2 while rotating the first substrate W1 or the second substrate W2 held by the spin chuck, for example.
- the pure water supplied on the first substrate W1 or the second substrate W2 diffuses on the joint surface of the first substrate W1 or the second substrate W2, and the joint surface becomes hydrophilic.
- the configuration of the joining device 41 will be described later.
- the third processing block G3 is provided with a transition device 50 for the first substrate W1 and the second substrate W2, and a transition device 51 for the polymerization substrate T in this order from the bottom.
- a transport region 60 is formed in a region surrounded by the first processing block G1, the second processing block G2, and the third processing block G3.
- a transport device 61 is arranged in the transport region 60.
- the transport device 61 has, for example, a transport arm that is movable in the vertical direction, the horizontal direction, and around the vertical axis.
- the transfer device 61 moves in the transfer area 60, and the first substrate W1 and the second substrate are connected to predetermined devices in the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transport area 60. W2 and the polymerization substrate T are conveyed.
- the joining system 1 includes a control device 70.
- the control device 70 controls the operation of the joining system 1.
- the control device 70 is, for example, a computer, and includes a control unit 70a and a storage unit 70b.
- the control unit 70a includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input / output port, and various circuits.
- the CPU of such a microcomputer realizes the control described later by reading and executing the program stored in the ROM.
- the storage unit 70b is realized by, for example, a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.
- the program may be recorded on a recording medium that can be read by a computer, and may be installed from the recording medium in the storage unit 70b of the control device 70.
- Recording media that can be read by a computer include, for example, a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
- the joining device 41 will be described. As shown in FIG. 1, the joining device 41 is divided into a transport region T1 and a processing region T2.
- the transport region T1 is provided with a transition 80 on which the first substrate W1, the second substrate W2, and the polymerization substrate T are temporarily placed.
- the first substrate W1, the second substrate W2, and the polymerization substrate T are transported in the transport region T1 or between the transport region T1 and the processing region T2 by a transport device (not shown).
- a position adjusting mechanism (not shown) for adjusting the horizontal orientation of the first substrate W1 and the second substrate W2 and an inversion mechanism (not shown) for inverting the front and back surfaces of the first substrate W1. ) Is provided.
- the transition 80 includes a mounting portion 81, displacement sensors 82a and 82b, and a load cell 83.
- FIG. 3 is a schematic view showing the configuration of the transition 80 according to the embodiment.
- the transition 80 may be provided in a plurality of stages in the vertical direction, for example.
- the mounting portion 81 supports the first substrate W1, the second substrate W2, and the polymerization substrate T from below by, for example, a plurality of support pins 81a.
- the plurality of support pins 81a abut on a non-joining surface such as the first substrate W1 to support each substrate.
- the plurality of support pins 81a are moved up and down by an actuator (not shown) arranged on the mounting portion 81.
- each substrate is delivered by the plurality of support pins 81a and the transfer device 61 (see FIG. 2). Further, in the mounting portion 81, each substrate is delivered by a plurality of support pins 81a and a transport device (not shown) provided in the transport region T1.
- a pair of displacement sensors 82a and 82b are arranged side by side in the vertical direction. Specifically, of the pair of displacement sensors 82a and 82b, one of the displacement sensors 82a is arranged above the first substrate W1 and the second substrate W2 supported by the plurality of support pins 81a. Further, the other displacement sensor 82b is arranged below the first substrate W1 and the second substrate W2 supported by the plurality of support pins 81a.
- the displacement sensors 82a and 82b measure the amount of warpage of the first substrate W1 and the second substrate W2.
- the displacement sensors 82a and 82b are, for example, laser displacement meters.
- the displacement sensors 82a and 82b irradiate the first substrate W1 and the second substrate W2 with laser light, and receive the reflected light.
- the displacement sensors 82a and 82b measure the height of the joint surface of the first substrate W1 and the height of the non-joint surface of the first substrate W1 and measure the amount of warpage of the first substrate W1.
- the displacement sensor 82a is attached to the drive arm 82c.
- the displacement sensor 82b is attached to the drive arm 82d.
- the displacement sensors 82a and 82b move in the horizontal direction together with the drive arms 82c and 82d by an actuator (not shown).
- the displacement sensors 82a and 82b measure the amount of warpage of the first substrate W1 and the second substrate W2 while moving in the horizontal direction.
- the amount of warpage is the amount of protrusion of the central portion of the substrate with respect to the outer peripheral portion of the substrate.
- the central portion is a predetermined region including the center of the substrate, and is a preset region.
- the outer peripheral portion is a region outside the central portion of the substrate in the radial direction of the substrate.
- the warp amount is measured as a positive value. ..
- the warp amount is measured as a negative value. ..
- the load cell 83 measures the coefficient of friction on the non-bonded surface of the first substrate W1 and the non-bonded surface of the second substrate W2.
- the load cell 83 is attached to the drive arm 83a.
- the load cell 83 moves horizontally and vertically together with the drive arm 83a by an actuator (not shown).
- the contact terminal 83c is connected to the load cell 83 via the arm 83b.
- the contact terminal 83c is provided at the tip of the arm 83b.
- a plurality of load cells 83 may be provided.
- a load cell for measuring the friction coefficient of the first substrate W1 and a load cell for measuring the friction coefficient of the second substrate W2 may be provided.
- the contact terminal 83c is made of the same material as the pin 120 and the holding portion 211, which will be described later.
- the load cell 83 measures the coefficient of friction of the first substrate W1 on the non-junction surface when the contact terminal 83c is pressed against the non-junction surface of the first substrate W1 and moves in the horizontal direction. Specifically, the load cell 83 measures, for example, the frictional force when the contact terminal 83c moves in contact with the non-joining surface of the first substrate W1, and presses the contact terminal 83c against the first substrate W1. The friction coefficient is measured based on the measured frictional force.
- the transition 80 temporarily causes the first substrate W1, the second substrate W2, and the polymerization substrate T to stand by, the amount of warpage of the first substrate W1 and the second substrate W2, and the first substrate W1. And the coefficient of friction of the second substrate W2 are measured.
- the joining device 41 includes a first holding mechanism 100 and a second holding mechanism 200.
- FIG. 4 is a schematic view showing a partial configuration of the joining device 41 according to the embodiment.
- the first holding mechanism 100 and the second holding mechanism 200 are provided in the processing area T2 (see FIG. 1).
- the first holding mechanism 100 includes a rotating mechanism 101, a first height measuring unit 102, and a first chuck unit 103.
- the first holding mechanism 100 attracts and holds the first substrate W1 by the first chuck portion 103. Details of the first chuck portion 103 will be described later.
- the rotating mechanism 101 is attached to the ceiling portion 41a of the processing container of the joining device 41.
- the rotation mechanism 101 rotatably supports the first chuck portion 103.
- the rotation mechanism 101 rotates the first chuck portion 103 about an axis along the Z-axis direction.
- the first height measuring unit 102 is attached to the ceiling portion 41a of the processing container.
- the first height measuring unit 102 may be attached to the rotating mechanism 101 or the first chuck unit 103.
- the first height measuring unit 102 measures the height of the joint surface of the second substrate W2. Further, the first height measuring unit 102 measures the thickness of the second substrate W2.
- the first height measuring unit 102 is, for example, an alignment camera using a CCD camera.
- the first height measuring unit 102 takes an image of the alignment pattern provided on the second substrate W2, recognizes the alignment pattern, and measures the focused height as the height of the joint surface of the second substrate W2.
- the first height measuring unit 102 sets the difference between the height of the joint surface of the second substrate W2 and the height of the surface of the second chuck portion 203 of the second holding mechanism 200 set in advance as the thickness of the second substrate W2. Measure as.
- the first height measuring unit 102 may be a displacement sensor.
- the displacement sensor is, for example, a laser displacement meter.
- the displacement sensor irradiates the second chuck portion 203 and the second substrate W2 with laser light and receives the reflected light to obtain the height of the joint surface of the second substrate W2 and the thickness of the second substrate W2. Measure the displacement.
- the first holding mechanism 100 may include an alignment camera and a displacement sensor as the first height measuring unit 102.
- the second holding mechanism 200 includes a moving mechanism 201, a second height measuring unit 202, and a second chuck unit 203.
- the second holding mechanism 200 attracts and holds the second substrate W2 by the second chuck portion 203. Details of the second chuck portion 203 will be described later.
- the moving mechanism 201 moves the second height measuring unit 202 and the second chuck unit 203 in the horizontal direction and the vertical direction.
- the moving mechanism 201 includes a first moving mechanism 201a, a second moving mechanism 201b, and a third moving mechanism 201c.
- the first moving mechanism 201a moves the second height measuring portion 202 and the second chuck portion 203 along a rail provided on the floor portion 41b of the processing container of the joining device 41 and extending in the X-axis direction.
- the second moving mechanism 201b is attached to the upper part of the first moving mechanism 201a.
- the second moving mechanism 201b moves the second height measuring portion 202 and the second chuck portion 203 along a rail provided on the upper surface of the first moving mechanism 201a and extending in the Y-axis direction.
- the third moving mechanism 201c is attached to the second moving mechanism 201b and moves the second height measuring unit 202 and the second chuck unit 203 in the vertical direction.
- the second height measuring unit 202 is attached to the second chuck unit 203.
- the second height measuring unit 202 measures the height of the joint surface of the first substrate W1. Further, the second height measuring unit 202 measures the thickness of the first substrate W1.
- the second height measuring unit 202 is an alignment camera and a displacement sensor, like the first height measuring unit 102.
- FIG. 5 is a schematic view showing the configurations of the first chuck portion 103 and the second chuck portion 203 according to the embodiment.
- the first chuck portion 103 includes a support portion 110, a holding portion 111, a first suction portion 112, a second suction portion 113, and a deformed portion 114.
- the support portion 110 is rotatably attached to the rotation mechanism 101 (see FIG. 4).
- the support portion 110 is formed in a circular shape.
- a storage chamber 110a for accommodating the deformed portion 114 is formed in the support portion 110.
- the accommodation chamber 110a is formed in the center of the support portion 110.
- the holding portion 111 is attached to the lower surface of the supporting portion 110 and fixed to the supporting portion 110.
- the holding portion 111 is formed in a circular shape.
- a plurality of pins 120 are provided on the lower surface of the holding portion 111. The plurality of pins 120 come into contact with the upper surface of the first substrate W1, that is, the non-bonded surface of the first substrate W1 to hold the first substrate W1.
- the holding portion 111 holds the first substrate W1 by adsorbing the non-bonded surface of the first substrate W1 (an example of the substrate).
- the first substrate W1 is attracted and held by the holding unit 111 by performing vacuuming by the first suction unit 112 and the second suction unit 113. That is, the holding portion 111 (an example of the first holding portion) holds the first substrate W1 (an example of the substrate) to be joined.
- An outer rib 121 and an inner rib 122 are provided on the lower surface of the holding portion 111.
- the outer rib 121 contacts the upper surface of the first substrate W1, that is, the outer peripheral portion of the non-bonded surface of the first substrate W1.
- the outer rib 121 has the same height as the pin 120.
- the outer rib 121 is provided outside the pin 120 in the radial direction of the first substrate W1.
- the outer rib 121 is formed in an annular shape along the peripheral edge of the first substrate W1.
- the inner rib 122 contacts the upper surface of the first substrate W1.
- the inner rib 122 is provided inside the outer rib 121 in the radial direction of the first substrate W1.
- the inner rib 122 has the same height as the outer rib 121, that is, the pin 120.
- the inner rib 122 is formed in an annular shape and is formed concentrically with the outer rib 121.
- the area inside the outer rib 121 is divided into a first suction area 123a and a second suction area 123b.
- the first suction region 123a is a region inside the inner rib 122 in the radial direction of the first substrate W1.
- the second suction region 123b is a region outside the inner rib 122 in the radial direction of the first substrate W1.
- a first suction hole 124a, a second suction hole 124b, and an insertion hole 124c are formed in the holding portion 111.
- the first suction hole 124a communicates with the first suction region 123a.
- a plurality of first suction holes 124a are formed.
- the second suction hole 124b communicates with the second suction region 123b.
- a plurality of second suction holes 124b are formed.
- the insertion hole 124c is formed in the center of the holding portion 111, and the tip of the actuator 114a of the deforming portion 114 described later is inserted.
- a temperature sensor 126 for measuring the temperature of the first substrate W1 is provided on the lower surface of the holding portion 111.
- the temperature sensor 126 abuts on the upper surface of the first substrate W1, that is, the non-bonded surface of the first substrate W1.
- a plurality of temperature sensors 126 are provided.
- the temperature of the first substrate W1 is an average value of the temperatures measured by the plurality of temperature sensors 126.
- One temperature sensor 126 may be provided.
- the temperature sensor 126 may be provided at a position where it does not come into contact with the non-joining surface of the first substrate W1.
- the temperature sensor 126 may measure the temperature of a portion correlating with the temperature of the first substrate W1, for example, the temperature of the holding portion 111 or the pin 120, and estimate the temperature of the first substrate W1 based on the measured temperature.
- the first suction unit 112 is connected to the first suction hole 124a.
- the first suction unit 112 is, for example, a vacuum pump.
- the first suction region 123a is depressurized by being evacuated using the first suction portion 112.
- the second suction unit 113 is connected to the second suction hole 124b.
- the second suction unit 113 is, for example, a vacuum pump.
- the second suction region 123b is depressurized by being evacuated using the second suction portion 113.
- the first suction region 123a is decompressed by the first suction unit 112, and the second suction region 123b is depressurized by the second suction unit 113, so that the first substrate W1 is sucked and held by the holding portion 111.
- the first chuck portion 103 can be evacuated for each of the first suction portion 112 and the second suction portion 113. That is, the suction force with respect to the first substrate W1 can be adjusted for each of the first suction region 123a and the second suction region 123b.
- the deformed portion 114 is provided in the accommodation chamber 110a formed in the support portion 110. A part of the deformed portion 114 may be provided in the rotating mechanism 101 (see FIG. 4).
- the deforming portion 114 includes an actuator 114a and a cylinder 114b.
- the actuator 114a generates a constant pressure in a constant direction by air supplied from an electropneumatic regulator (not shown).
- the actuator 114a can generate a constant pressure regardless of the position of the pressure acting point.
- the tip of the actuator 114a abuts on the central portion of the upper surface of the first substrate W1 and can control the pressing load applied to the central portion of the first substrate W1.
- the cylinder 114b supports the actuator 114a.
- the cylinder 114b moves the actuator 114a in the vertical direction by, for example, a drive unit having a built-in motor.
- the deforming portion 114 controls the pressing load on the first substrate W1 by the actuator 114a, and controls the movement of the actuator 114a by the cylinder 114b.
- the deformed portion 114 downwardly presses the central portion of the first substrate W1 that is attracted and held by the holding portion 111, and bends the first substrate W1 downward. That is, in the deformed portion 114 (an example of the first deformed portion), the central portion of the first substrate W1 (an example of the substrate) held by the holding portion 111 (an example of the first holding portion) is set as the outer peripheral portion of the first substrate. Protrude against it.
- the deformed portion 114 can adjust the protruding amount of the central portion of the first substrate W1 by controlling the moving amount of the actuator 114a.
- the second chuck portion 203 includes a base portion 210, a holding portion 211, a suction portion 212, and a deforming portion 213.
- the base portion 210 is attached to the third moving mechanism 201c (see FIG. 4).
- the base portion 210 is circular.
- a storage chamber 210a for accommodating the measurement unit 240 is formed in the base portion 210.
- the accommodation chamber 210a is formed in the center of the base portion 210.
- An insertion hole 210b is formed in the base portion 210.
- the insertion hole 210b communicates with the storage chamber 210a.
- the insertion hole 210b is formed in the center of the base portion 210.
- the base portion 210 is provided with a suction pipe 210c and an intake / exhaust pipe 210d.
- a plurality of suction tubes 210c are provided.
- one suction tube 210c may be provided.
- a sealing material, for example, a V-ring is provided around the suction tube 210c.
- the suction pipe 210c is provided up to the holding portion 211.
- a sealing material, for example, a V-ring is provided around the intake / exhaust pipe 210d.
- the holding portion 211 is provided above the base portion 210.
- the holding portion 211 is circular.
- a fixing ring 242 is provided around the holding portion 211.
- the holding portion 211 is fixed to the base portion 210 by the fixing ring 242.
- the holding portion 211 is formed of, for example, a ceramic material such as alumina ceramic or silicon carbide.
- the holding portion 211 can be expanded and contracted in the vertical direction and the horizontal direction.
- the holding portion 211 can realize a highly accurate flat surface and high resilience.
- the upper surface of the holding portion 211 is circular.
- the diameter of the upper surface of the holding portion 211 is larger than the diameter of the second substrate W2.
- the thickness of the central portion of the holding portion 211 is larger than the thickness of the outer peripheral portion.
- Ribs 211a are provided on the lower surface of the holding portion 211. The rib 211a comes into contact with the base portion 210 when the upper surface of the holding portion 211 is horizontal.
- a pressure variable space 243 is formed between the lower surface of the holding portion 211 and the upper surface of the base portion 210.
- the holding portion 211 is provided with a suction pipe 210c.
- a sealing material for example, a V-ring is provided around the suction tube 210c.
- the second substrate W2 is sucked and held by the holding portion 211 by performing evacuation by the suction portion 212 via the suction pipe 210c.
- the holding portion 211 holds the second substrate W2 by adsorbing the non-bonded surface of the second substrate W2 (an example of the substrate). That is, the holding portion 211 (an example of the second holding portion) holds the second substrate W2 (an example of the substrate) bonded to the first substrate W1.
- the holding unit 211 is provided with a temperature sensor 244 that measures the temperature of the second substrate W2.
- the temperature sensor 244 comes into contact with the lower surface of the second substrate W2, that is, the non-bonded surface of the second substrate W2.
- a plurality of temperature sensors 244 are provided.
- the temperature of the second substrate W2 is an average value of the temperatures measured by the plurality of temperature sensors 244.
- one temperature sensor 244 may be provided.
- the temperature sensor 244 may be provided at a position where it does not come into contact with the non-joining surface of the second substrate W2.
- the temperature sensor 244 may measure the temperature at a location correlating with the temperature of the second substrate W2, for example, the temperature of the lower surface of the holding portion 211, and estimate the temperature of the second substrate W2 based on the measured temperature.
- the suction unit 212 is connected to the suction pipe 210c.
- the suction unit 212 is, for example, a vacuum pump.
- air is sucked from the lower surface of the second substrate W2, that is, between the non-bonded surface and the holding portion 211.
- the second substrate W2 is sucked and held by the holding portion 211 by sucking the air between the lower surface of the second substrate W2 and the holding portion 211 by the suction portion 212.
- the deformed portion 213 includes a vacuum pump 220 and an electropneumatic regulator 221.
- the vacuum pump 220 is connected to the intake / exhaust pipe 210d via the switching valve 222.
- the pressure variable space 243 is depressurized by performing evacuation by the vacuum pump 220.
- the pressure variable space 243 is depressurized, the rib 211a of the holding portion 211 comes into contact with the base portion 210. In this case, the upper surface of the holding portion 211 is horizontal.
- the electropneumatic regulator 221 is connected to the intake / exhaust pipe 210d via the switching valve 222.
- the electropneumatic regulator 221 supplies air to the variable pressure space 243 and pressurizes the variable pressure space 243.
- the holding portion 211 is pressed from below.
- the outer peripheral portion of the holding portion 211 is fixed to the base portion 210 by the fixing ring 242. Therefore, when pressed from below, the central portion of the holding portion 211 protrudes upward from the outer peripheral portion.
- the switching valve 222 switches the connection state between the intake / exhaust pipe 210d, the vacuum pump 220, and the electropneumatic regulator 221.
- the deforming portion 213 pressurizes the pressure variable space 243 to project the central portion of the holding portion 211 upward.
- the central portion of the second substrate W2 that is attracted and held by the holding portion 211 protrudes upward, and the second substrate W2 is curved. That is, the deformed portion 213 projects the central portion of the second substrate W2 (an example of the substrate) held by the holding portion 211 with respect to the outer peripheral portion of the second substrate W2.
- the deforming portion 213 can adjust the amount of protrusion of the central portion of the second substrate W2 by adjusting the pressure in the pressure variable space 243.
- the measuring unit 240 measures the amount of protrusion of the holding unit 211, that is, the amount of protrusion of the central portion of the second substrate W2.
- the measuring unit 240 is, for example, a capacitance sensor.
- the capacitance sensor measures the change in capacitance formed by the sensor surface and the measurement target 240a as the distance between the sensor surface and the measurement target 240a.
- the measurement target 240a is attached to the center of the lower surface of the holding portion 211 and moves in the vertical direction together with the holding portion 211.
- the measurement target 240a is inserted into the insertion hole 210b of the base portion 210.
- a sealing material (not shown), for example, a V-ring is provided around the measurement target 240a.
- the joining device 41 bends the first substrate W1 by the first chuck portion 103 so that the central portion of the first substrate W1 projects downward, and the second chuck so that the central portion of the second substrate W2 projects upward.
- the second substrate W2 is curved by the portion 203.
- the joining device 41 joins the first substrate W1 and the second substrate W2 to form the polymerization substrate T.
- the first substrate W1 and the second substrate W2 may extend in the radial direction to cause a scaling error.
- the scaling error is the amount of elongation of the substrate in the horizontal direction, and is the magnification in the radial direction with the center of the substrate as the base point.
- the second substrate W2 will be described as an example.
- the diameter of the second substrate W2 in the non-curved state is defined as "Dw”
- the thickness of the second substrate W2 is defined as "t”.
- the radius of the upper surface of the holding portion 211 in the horizontal state is defined as "Rc”
- the radius of curvature of the upper surface of the holding portion 211 in the curved state is defined as "R”.
- FIG. 6 is a schematic view showing a state in which the second substrate W2 according to the embodiment is curved.
- the lower surface (non-joining surface) side of the second substrate W2 shrinks, and the upper surface (joining surface) side of the second substrate W2 expands.
- the amount of elongation of the upper surface of the second substrate W2 is defined as " ⁇ S (ppm)".
- a ⁇ ⁇ S in the equation (4) is the product of “ ⁇ S” on the order of 10-6 and “a”, which is sufficiently smaller than the other terms. Therefore, if the term “a ⁇ ⁇ S” in the equation (4) is omitted and modified, the equation (5) is obtained.
- the elongation amount " ⁇ S" of the joint surface of the second substrate W2 is proportional to the thickness "t" of the second substrate W2.
- the elongation of the joint surface of the second substrate W2 is affected by the thickness of the second substrate W2. That is, the scaling error of the substrate is affected by the thickness of the substrate.
- the reference substrate is a substrate in which the scaling error in the polymerization substrate T is equal to or less than a preset reference value.
- a second substrate W2 will be used as an example of the substrate.
- the elongation amount " ⁇ S0" of the joint surface of the reference substrate is based on the equation (5). ).
- Equation (8) is established based on equations (6) and (7).
- R1 A x R0 ... (9)
- the radius of curvature "R1" of the second substrate W2 is the curvature obtained by multiplying the radius of curvature "R0" of the reference substrate by the ratio "A" of the thickness "t0" of the reference substrate and the thickness "t1" of the second substrate W2. Make it a radius. Thereby, the elongation amount of the joint surface of the second substrate W2 can be made equal to the elongation amount " ⁇ S0" of the joint surface of the reference substrate.
- the amount of protrusion which is the amount of deformation of the upper surface of the holding portion 211, is defined as “h”.
- the radius "Rc” on the upper surface of the holding portion 211 in the horizontal state and the radius of curvature "R” on the upper surface of the curved holding portion 211.
- the relationship of equation (10) holds.
- R 2 Rc 2 + (Rh) 2 ... (10)
- the amount of elongation of the joint surface of the second substrate W2 is determined by joining the reference substrate.
- the amount of protrusion of the upper surface of the holding portion 211 that is equal to the amount of elongation of the surface " ⁇ S0" can be calculated.
- the radius "Rc" of the upper surface of the holding portion 211 in the horizontal state is constant regardless of the second substrate W2 and is a known value. Further, the radius of curvature "R0" of the reference substrate and the thickness "t0" of the reference substrate are known values by calculating or setting based on the reference substrate. Therefore, the amount of protrusion of the central portion of the second substrate W2 can be calculated by measuring the thickness "t1" of the second substrate W2.
- the height of the central portion of the holding portion 211 is set to the calculated protrusion amount “h”, the elongation of the joint surface of the second substrate W2 is increased with respect to the reference substrate regardless of the thickness of the second substrate W2. Can be equal. That is, it is possible to suppress the occurrence of scaling error with respect to the reference substrate.
- the scaling error of the substrate may be caused by the expansion or contraction of the substrate depending on the temperature of the substrate.
- a method of suppressing the scaling error due to the temperature of the substrate will be described.
- the occurrence of scaling error with respect to the reference substrate is suppressed.
- a second substrate W2 will be used as an example of the substrate.
- B is the coefficient of thermal expansion of the base material of the second substrate W2.
- C is a value for correcting the coefficient of thermal expansion of the base material of the second substrate W2 due to the influence of the film formed on the second substrate W2.
- B and c are preset by experiments and the like.
- the radius of curvature of the second substrate W2 for extending the joint surface of the second substrate W2 having the same thickness as the reference substrate “t0” by “ ⁇ Sc1” which is the adjustment amount is set to “R1”.
- the adjustment amount “ ⁇ Sc1” is represented by the equation (16) based on the equation (6).
- the radius of curvature "R1" of the second substrate W2 is set to the radius of curvature obtained by multiplying the radius of curvature "R0" of the reference substrate by a predetermined value "1 / (1-B)".
- the elongation amount of the joint surface of the second substrate W2 can be made equal to the elongation amount " ⁇ S0" of the joint surface of the reference substrate regardless of the temperature of the second substrate W2.
- B can be calculated by the following method. First, the temperature of the second substrate W2 is measured, and the temperature change “ ⁇ T” with respect to the temperature of the reference substrate is calculated. Then, based on the calculated temperature change “ ⁇ T”, the elongation amount “ ⁇ St” of the joint surface of the second substrate W2 is calculated from the equation (13). Further, “B” is calculated from the formula (14) based on the calculated elongation amount " ⁇ St” of the joint surface of the second substrate W2 and the elongation amount " ⁇ S0" of the joint surface of the reference substrate. The elongation amount “ ⁇ S0” of the joint surface of the reference substrate is known by being calculated in advance or measured in advance.
- the elongation of the joint surface of the second substrate W2 is equal to that of the reference substrate regardless of the temperature of the second substrate W2. can do. That is, it is possible to suppress the occurrence of a scaling error due to the temperature of the second substrate W2 with respect to the reference substrate.
- the joint surface of the outer peripheral portion may be sucked and held by the holding portion 211 in a state of being shrunk from the second substrate W2 protruding from the joint surface of the central portion. That is, the scaling error of the substrate may be caused by the warp of the substrate.
- a second substrate W2 will be used as an example of the substrate.
- the amount of warpage of the reference substrate is “W0", and the friction coefficient of the reference substrate is “ ⁇ 0". Further, the amount of warpage of the second substrate W2, which is different from the reference substrate, is set to "W1", and the friction coefficient of the second substrate W2 is set to " ⁇ 1".
- elongation amount the influence of the elongation amount of the joint surface due to the warp of the second substrate W2 (hereinafter, referred to as “elongation amount”) “ ⁇ Sw” is represented by the equation (19).
- the joint surface of the second substrate W2 is represented by the formula (20).
- the radius of curvature of the second substrate W2 for extending the joint surface of the second substrate W2 having the same thickness as the reference substrate “t0” by “ ⁇ Sc1” which is the adjustment amount is set to “R1”.
- the adjustment amount “ ⁇ Sc1” is represented by the equation (23) based on the equation (6).
- R1 (1 / (1-C)) x R0 ... (25)
- the radius of curvature "R1" of the second substrate W2 is set to the radius of curvature obtained by multiplying the radius of curvature "R0" of the reference substrate by a predetermined value "1 / (1-C)".
- C can be calculated by the following method. First, the warp amount “W1” of the second substrate W2 and the friction coefficient “ ⁇ 1” of the second substrate W2 are measured, and the elongation amount “ ⁇ Sw” of the joint surface of the second substrate W2 is calculated based on the equation (19). To do. The warpage amount “W0” of the reference substrate and the friction coefficient “ ⁇ 0” of the reference substrate are known values.
- the reference substrate a substrate that is not warped is used, and the ratio of the amount of protrusion of the second substrate W2 in which the central portion of the joint surface protrudes from the outer peripheral portion of the joint surface with respect to the reference substrate is calculated and the second substrate is used.
- the elongation amount " ⁇ Sw" of the joint surface of W2 may be calculated.
- the elongation of the joint surface of the second substrate W2 is equal to that of the reference substrate regardless of the warp of the second substrate W2. can do. That is, it is possible to suppress the occurrence of scaling error due to the warp of the second substrate W2 with respect to the reference substrate.
- a second substrate W2 will be used as an example of the substrate.
- the adjustment amount that makes the second substrate W2 of the thickness "t1", the elongation amount “ ⁇ St” due to the temperature, and the elongation amount “ ⁇ Sw” due to the warp equal to the elongation amount " ⁇ S0" of the reference substrate is "Sc1". Then, the equation (26) holds.
- the adjustment amount "Sc1” is an adjustment amount caused by the thickness "t1" of the second substrate W2.
- R1 A x (1-BC) x R0 ... (30)
- the radius of curvature "R1" of the second substrate W2 is set to the radius of curvature obtained by multiplying the radius of curvature "R0" of the reference substrate by a predetermined value "Ax (1-BC)". .. Thereby, the elongation amount of the joint surface of the second substrate W2 can be made equal to the elongation amount “ ⁇ S0” of the joint surface of the reference substrate regardless of the thickness, temperature, and warpage of the second substrate W2.
- the protrusion amount "h" on the upper surface of the holding portion 211 is calculated. be able to. That is, it is possible to calculate the amount of protrusion of the central portion of the second substrate W2 that makes the amount of elongation of the joint surface of the second substrate W2 equal to the amount of elongation " ⁇ S0" of the joint surface of the reference substrate.
- the elongation of the joint surface of the second substrate W2 is used as a reference regardless of the thickness, temperature, and warpage of the second substrate W2. Can be equal to the substrate.
- Adjustment of the height of the upper surface of the holding portion 211 that is, adjustment of the protrusion amount of the central portion of the second substrate W2 is executed for each second substrate W2.
- the second substrate W2 is a substrate in which the outer peripheral portion of the joint surface protrudes from the central portion of the joint surface
- the elongation amount “ ⁇ Sw” due to the warp is not used, and the upper surface of the holding portion 211 is used.
- the amount of deformation "h” may be calculated. That is, when the outer peripheral portion of the joint surface is the second substrate W2 that protrudes from the central portion of the joint surface, the central portion of the second substrate W2 protrudes without using the elongation amount “ ⁇ Sw” due to the warp. The amount may be adjusted.
- the second substrate W2 (an example of the substrate) is warped so that the joint surface of the outer peripheral portion protrudes from the joint surface of the central portion in the state of not being held by the holding portion 211
- the second substrate The amount of protrusion is adjusted for each second substrate W2 based on at least one of the thickness of W2 and the temperature of the second substrate W2.
- the joining device 41 determines the amount of protrusion of the second substrate W2 by the deformed portion 213 based on at least one of the thickness of the second substrate W2, the temperature of the second substrate W2, and the warp of the second substrate W2. It may be adjusted for each W2. For example, the joining device 41 may adjust the protrusion amount of the second substrate W2 for each second substrate W2 based on the temperature of the second substrate W2.
- the second substrate W2 has been described as an example, but the same applies to the first substrate W1, and the adjustment of the protrusion amount of the central portion of the first substrate W1 is executed for each first substrate W1.
- the amount of movement of the actuator 114a by the cylinder 114b of the deformed portion 114 corresponds to the amount of protrusion of the upper surface of the holding portion 211 described above.
- the radius of the inner rib 122 corresponds to the radius of the upper surface of the holding portion 211 in the above-mentioned horizontal state.
- FIG. 7 is a flowchart illustrating the joining process according to the embodiment.
- the various processes shown in FIG. 7 are executed based on the control by the control device 70, specifically, the control unit 70a.
- the thickness, temperature, warpage amount, and friction coefficient of the reference substrate in the first substrate W1 are stored in advance in the storage unit 70b. Further, the thickness, temperature, warpage amount, and friction coefficient of the reference substrate in the second substrate W2 are stored in advance in the storage unit 70b.
- the control device 70 performs the first measurement process (S100). Specifically, the control device 70 conveys the first substrate W1 that has been surface-modified by the surface modification device 30 and has been hydrophilized by the surface hydrophilization device 40 to the transition 80. Then, the control device 70 measures the amount of warpage of the first substrate W1 conveyed to the transition 80 by the displacement sensors 82a and 82b. Further, the control device 70 measures the friction coefficient of the first substrate W1 by the load cell 83. The first substrate W1 subjected to the first measurement process is adjusted in the horizontal direction by the position adjusting mechanism, inverted by the inversion mechanism, and then sucked and held by the first chuck portion 103.
- the control device 70 performs the second measurement process (S101). Specifically, the control device 70 conveys the second substrate W2, which has been surface-modified by the surface modification device 30 and has been hydrophilized by the surface hydrophilic device 40, to the transition 80. Then, the control device 70 measures the amount of warpage of the second substrate W2 conveyed to the transition 80 by the displacement sensors 82a and 82b. Further, the control device 70 measures the friction coefficient of the second substrate W2 by the load cell 83. The second substrate W2 subjected to the second measurement process is attracted and held by the second chuck portion 203 after the horizontal orientation is adjusted by the position adjusting mechanism.
- the order of the first measurement process and the second measurement process may be reversed, and some processes may be executed at the same time.
- the control device 70 performs the third measurement process (S102). Specifically, the control device 70 measures the thickness of the first substrate W1 and the thickness of the second substrate W2. The control device 70 measures the thickness of the second substrate W2 by the first height measuring unit 102. Further, the control device 70 measures the thickness of the first substrate W1 by the second height measuring unit 202.
- the control device 70 performs the fourth measurement process (S103). Specifically, the control device 70 measures the temperature of the first substrate W1 by the temperature sensor 126. Further, the control device 70 measures the temperature of the second substrate W2 by the temperature sensor 244.
- the order of the third measurement process and the fourth measurement process may be reversed or may be simultaneous.
- the control device 70 sets the amount of protrusion of the first substrate W1 (S104). Specifically, the control device 70 sets the movement amount of the actuator 114a based on the thickness of the first substrate W1, the temperature of the first substrate W1, and the warp of the first substrate W1, and sets the movement amount of the actuator 114a of the first substrate W1. Set the amount of protrusion in the center.
- the control device 70 sets the amount of protrusion of the second substrate W2 (S105). Specifically, the control device 70 sets the amount of protrusion of the holding portion 211 based on the thickness of the second substrate W2, the temperature of the second substrate W2, and the warp of the second substrate W2, and sets the protrusion amount of the holding portion 211. Set the amount of protrusion in the center of.
- the order of setting the protrusion amount of the first substrate W1 and setting the protrusion amount of the second substrate W2 may be reversed or may be the same.
- the control device 70 performs a joining process (S106). Specifically, the control device 70 adjusts the horizontal positions of the first substrate W1 and the second substrate W2, and then adjusts the vertical positions of the first substrate W1 and the second substrate W2.
- the central portion of the first substrate W1 and the central portion of the second substrate W2 are formed.
- the vertical positions of the first substrate W1 and the second substrate W2 are adjusted so as to abut and be pressed.
- FIG. 8 is a diagram showing a state in which the first substrate W1 and the second substrate W2 are curved in the joining process according to the embodiment.
- the control device 70 stops the suction of the first suction unit 112 of the first chuck unit 103.
- the control device 70 specifically, the control unit 70a, includes the thickness of the first substrate W1 (an example of the substrate), the temperature of the first substrate W1, and the warp of the first substrate W1 when not held by the holding portion 111.
- the amount of protrusion of the first substrate W1 by the deformed portion 114 is adjusted for each first substrate W1 based on at least one of the above.
- control device 70 projects based on at least one of the thickness of the first substrate W1 with respect to the reference substrate, the temperature of the first substrate W1 with respect to the reference substrate, and the warp of the first substrate W1 with respect to the reference substrate. The amount is adjusted for each first substrate W1.
- control device 70 specifically, the control unit 70a, includes the thickness of the second substrate W2 (an example of the substrate), the temperature of the second substrate W2, and the second substrate W2 in a state where it is not held by the holding portion 211.
- the amount of protrusion of the second substrate W2 by the deformed portion 213 is adjusted for each second substrate W2 based on at least one of the warpages of the two.
- control device 70 projects based on at least one of the thickness of the second substrate W2 with respect to the reference substrate, the temperature of the second substrate W2 with respect to the reference substrate, and the warp of the second substrate W2 with respect to the reference substrate. The amount is adjusted for each second substrate W2.
- the first substrate W1 and the second substrate W2 have undergone surface modification treatment. Therefore, a van der Worth force (intermolecular force) is generated, and the bonding surfaces of the substrates are bonded to each other. Further, the first substrate W1 and the second substrate W2 are hydrophilized. Therefore, the hydrophilic groups on the bonding surfaces of the substrates are hydrogen-bonded, and the bonding surfaces of the substrates are firmly bonded to each other.
- the control device 70 stops the suction of the second suction unit 113.
- the first substrate W1 falls on the second substrate W2 from the central portion to the outer peripheral portion, and the first substrate W1 and the second substrate W2 are joined to form the polymerization substrate T.
- control device 70 stops the electropneumatic regulator 221, switches the connection of the intake / exhaust pipe 210d to the vacuum pump 220, makes the upper surface of the holding portion 211 horizontal, and then stops the suction portion 212.
- the joining device 41 first has a holding portion 111 (an example of a first holding portion) for holding the first substrate W1 (an example of a substrate) to be joined and a central portion of the first substrate W1 held by the holding portion 111.
- a deformed portion 114 (an example of a first deformed portion) that projects from the outer peripheral portion of the substrate W1 is provided.
- the joining device 41 is determined by the deformed portion 114 based on at least one of the thickness of the first substrate W1, the temperature of the first substrate W1, and the warp of the first substrate W1 in a state where it is not held by the holding portion 111.
- a control unit 70a for adjusting the amount of protrusion of one substrate W1 for each first substrate W1 is provided.
- the joining device 41 can suppress the occurrence of scaling error on the first substrate W1 and can improve the joining accuracy on the polymerization substrate T.
- the joining device 41 has a holding portion 211 (an example of a second holding portion) for holding the second substrate W2 (an example of a substrate) to be joined, and a central portion of the second substrate W2 held by the holding portion 211. It is provided with a deformed portion 213 (an example of a second deformed portion) that projects from the outer peripheral portion of the second substrate W2.
- the joining device 41 is determined by the deformed portion 213 based on at least one of the thickness of the second substrate W2, the temperature of the second substrate W2, and the warp of the second substrate W2 in a state where it is not held by the holding portion 111.
- a control unit 70a for adjusting the amount of protrusion of the two substrates W2 for each second substrate W2 is provided.
- the joining device 41 can suppress the occurrence of scaling error on the second substrate W2, and can improve the joining accuracy on the polymerization substrate T.
- control unit 70a of the joining device 41 is based on at least one of the thickness of the first substrate W1 with respect to the reference substrate, the temperature of the first substrate W1 with respect to the reference substrate, and the warp of the first substrate W1 with respect to the reference substrate. The amount of protrusion is adjusted for each first substrate W1. Further, the control unit 70a of the joining device 41 is based on at least one of the thickness of the second substrate W2 with respect to the reference substrate, the temperature of the second substrate W2 with respect to the reference substrate, and the warp of the second substrate W2 with respect to the reference substrate. The amount of protrusion is adjusted for each second substrate W2.
- the joining device 41 can suppress the occurrence of scaling error of the first substrate W1 with respect to the reference substrate. Further, the joining device 41 can suppress the occurrence of a scaling error of the second substrate W2 with respect to the reference substrate. Therefore, the joining device 41 can match the joining accuracy of the other polymerization substrate T with the joining accuracy of the reference polymerization substrate T. That is, the joining device 41 can improve the joining accuracy of the polymerization substrate T.
- the holding portion 211 of the joining device 41 holds the second substrate W2 by adsorbing the non-joining surface of the second substrate W2. Further, when the second substrate W2 is warped so that the joint surface of the outer peripheral portion protrudes from the joint surface of the central portion in the state where the control unit 70a of the joining device 41 is not held by the holding portion 211. , The amount of protrusion is adjusted for each second substrate W2 based on at least one of the thickness of the second substrate W2 and the temperature of the second substrate W2.
- the joining device 41 can adjust the amount of protrusion of the second substrate W2 according to the direction of warpage of the second substrate W2, for example. Therefore, the joining device 41 can adjust the protrusion amount of the second substrate W2, for example, depending on whether or not a scaling error due to the warp of the second substrate W2 occurs. Therefore, the bonding device 41 can improve the bonding accuracy of the polymerization substrate T.
- the joining device 41 according to the modified example may apply the same configuration as the second chuck portion 203 to the first chuck portion 103. That is, the joining device 41 according to the modified example may include a holding portion 211 of the second chuck portion 203, a suction portion 212, and a first chuck portion 103 having a configuration of the deformed portion 213.
- the joining device 41 according to the modified example sucks and holds the first substrate W1 on the first chuck portion 103, and lowers the central portion of the first substrate W1 according to the thickness and warpage of the first substrate W1.
- the amount of protrusion of the first substrate W1 may be corrected according to the temperature of the first substrate W1. That is, the joining device 41 according to the modified example sets the protrusion amount to the first substrate W1 based on the temperature of the first substrate W1 in a state where the central portion of the first substrate W1 (an example of the substrate) is projected by the deformed portion 114. It may be adjusted for each. The same applies to the second substrate W2.
- the joining device 41 according to the modified example can suppress the occurrence of scaling error due to the temperature of the first substrate W1, for example. Therefore, the joining device 41 according to the modified example can improve the joining accuracy of the polymerization substrate T.
- the joining device 41 according to the modified example may generate the polymerization substrate T by projecting one of the first substrate W1 or the second substrate W2 and not projecting the other.
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Abstract
Description
実施形態に係る接合システム1について図1および図2を参照して説明する。図1は、実施形態に係る接合システム1の構成を示す模式図(その1)である。図2は、実施形態に係る接合システム1の構成を示す模式図(その2)である。
次に、接合装置41について説明する。接合装置41は、図1に示すように、搬送領域T1と、処理領域T2とに区画される。
トランジション80は、図3に示すように、載置部81と、変位センサ82a、82bと、ロードセル83とを備える。図3は、実施形態に係るトランジション80の構成を示す模式図である。なお、トランジション80は、例えば、上下方向に複数段設けられてもよい。
また、接合装置41は、図4に示すように、第1保持機構100と、第2保持機構200とを備える。図4は、実施形態に係る接合装置41の一部の構成を示す模式図である。第1保持機構100、および第2保持機構200は、処理領域T2(図1参照)に設けられる。
次に、第1チャック部103について図5を参照して説明する。図5は、実施形態に係る第1チャック部103、および第2チャック部203の構成を示す模式図である。
次に、第2チャック部203について説明する。第2チャック部203は、基台部210と、保持部211と、吸引部212と、変形部213とを備える。
ここで、湾曲した基板の接合面の伸びについて説明する。ここでは、第2基板W2を一例として説明する。湾曲していない状態における第2基板W2の直径を「Dw」とし、第2基板W2の厚さを「t」とする。また、水平状態における保持部211の上面の半径を「Rc」とし、湾曲した状態の保持部211の上面の曲率半径を「R」とする。
次に、基板の厚さによるスケーリング誤差の抑制方法について説明する。ここでは、基準となる基板(以下、「基準基板」と称する。)に対するスケーリング誤差の発生を抑制する。基準基板は、重合基板Tにおけるスケーリング誤差が、予め設定された基準値以下となる基板である。なお、基板の一例として第2基板W2を用いて説明する。
基板のスケーリング誤差は、基板の温度に応じて基板が膨張、または収縮することによって生じるおそれがある。次に、基板の温度によるスケーリング誤差の抑制方法について説明する。ここでは、基準基板に対するスケーリング誤差の発生を抑制する。なお、基板の一例として第2基板W2を用いて説明する。
中央部の接合面が外周部の接合面よりも突出する基板が吸着保持される場合には、例えば、第2基板W2は、第2基板W2の外周部が保持部211の上面に接した状態から吸着保持される。このとき、外周部と保持部211の上面との摩擦力が大きい場合には、第2基板W2は、径方向外側への変形が抑制されて保持部211に吸着される。そのため、例えば、外周部の接合面が中央部の接合面よりも突出する第2基板W2よりも縮んだ状態で、保持部211に吸着保持されるおそれがある。すなわち、基板のスケーリング誤差が、基板の反りによって生じるおそれがある。
上記した基板の厚さ、基板の温度、および基板の反りに起因するスケーリング誤差の発生抑制をまとめると、以下のようになる。なお、基板の一例として第2基板W2を用いて説明する。
次に、実施形態に係る接合処理について図7のフローチャートを参照し説明する。図7は、実施形態に係る接合処理を説明するフローチャートである。図7に示す各種処理は、制御装置70、具体的には、制御部70aによる制御に基づいて実行される。
接合装置41は、接合される第1基板W1(基板の一例)を保持する保持部111(第1保持部の一例)と、保持部111に保持された第1基板W1の中央部を第1基板W1の外周部に対して突出させる変形部114(第1変形部の一例)とを備える。接合装置41は、第1基板W1の厚さ、第1基板W1の温度、および保持部111に保持されていない状態における第1基板W1の反りの少なくとも一つに基づいて、変形部114による第1基板W1の突出量を第1基板W1毎に調整する制御部70aを備える。
変形例に係る接合装置41は、第2チャック部203と同様の構成を第1チャック部103に適用してもよい。すなわち、変形例に係る接合装置41は、第2チャック部203の保持部211や、吸引部212や、変形部213の構成を有する第1チャック部103を備えてもよい。
41 接合装置
70 制御装置
70a 制御部
70b 記憶部
80 トランジション
82a 変位センサ
82b 変位センサ
83 ロードセル
100 第1保持機構
102 第1高さ測定部
103 第1チャック部
111 保持部(第1保持部)
112 第1吸引部
113 第2吸引部
114 変形部(第1変形部)
126 温度センサ
200 第2保持機構
202 第2高さ測定部
203 第2チャック部
211 保持部(第2保持部)
212 吸引部
213 変形部(第2変形部)
244 温度センサ
W1 第1基板
W2 第2基板
Claims (6)
- 接合される基板を保持する保持部と、
前記保持部に保持された前記基板の中央部を前記基板の外周部に対して突出させる変形部と、
前記基板の厚さ、前記基板の温度、および前記保持部に保持されていない状態における前記基板の反りの少なくとも一つに基づいて、前記変形部による前記基板の突出量を前記基板毎に調整する制御部と
を備える接合装置。 - 前記制御部は、
基準基板に対する前記基板の厚さ、前記基準基板に対する前記基板の温度、および前記基準基板に対する前記基板の反りの少なくとも一つに基づいて、前記突出量を前記基板毎に調整する
請求項1に記載の接合装置。 - 前記制御部は、
前記変形部によって前記基板の中央部が突出された状態における前記基板の温度に基づいて、前記突出量を前記基板毎に調整する
請求項1または2に記載の接合装置。 - 前記保持部は、
前記基板の非接合面を吸着することによって前記基板を保持し、
前記制御部は、
前記保持部に保持されていない状態において前記外周部の接合面が前記中央部の接合面よりも突出するように、前記基板が反っている場合には、前記基板の厚さ、および前記基板の温度の少なくとも一つに基づいて、前記突出量を前記基板毎に調整する
請求項1~3のいずれか一つに記載の接合装置。 - 前記保持部は、
第1基板を保持する第1保持部と、
前記第1基板に接合される第2基板を保持する第2保持部と
を備え、
前記変形部は、
前記第1保持部に保持された前記第1基板の中央部を前記第1基板の外周部に対して突出させる第1変形部と、
前記第2保持部に保持された前記第2基板の中央部を前記第2基板の外周部に対して突出させる第2変形部と、
を備え、
前記制御部は、
前記第1変形部による前記第1基板の突出量を前記第1基板毎に調整し、かつ前記第2変形部による前記第2基板の突出量を前記第2基板毎に調整する
請求項1~4のいずれか一つに記載の接合装置。 - 接合される基板を保持する工程と、
保持された前記基板の中央部を前記基板の外周部に対して突出させる工程と、
前記基板の厚さ、前記基板の温度、および保持されていない状態における前記基板の反りの少なくとも一つに基づいて、前記基板の突出量を前記基板毎に調整する工程と
を含む接合方法。
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WO2018092861A1 (ja) * | 2016-11-16 | 2018-05-24 | 株式会社ニコン | 接合方法、接合装置、および保持部材 |
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