WO2021004518A1 - 一种复合托盘 - Google Patents

一种复合托盘 Download PDF

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Publication number
WO2021004518A1
WO2021004518A1 PCT/CN2020/101236 CN2020101236W WO2021004518A1 WO 2021004518 A1 WO2021004518 A1 WO 2021004518A1 CN 2020101236 W CN2020101236 W CN 2020101236W WO 2021004518 A1 WO2021004518 A1 WO 2021004518A1
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WO
WIPO (PCT)
Prior art keywords
composite
substrate
supporting
supporting unit
unit
Prior art date
Application number
PCT/CN2020/101236
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English (en)
French (fr)
Inventor
孙健
周剑
陈晨
Original Assignee
苏州迈正科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 苏州迈正科技有限公司 filed Critical 苏州迈正科技有限公司
Priority to EP20836223.6A priority Critical patent/EP3985143A4/en
Priority to KR1020227001749A priority patent/KR20220024678A/ko
Publication of WO2021004518A1 publication Critical patent/WO2021004518A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H01L21/67343—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates characterized by a material, a roughness, a coating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Definitions

  • the invention relates to the technical field of battery sheet manufacturing, in particular to a composite tray.
  • the composite tray in the silicon wafer coating equipment is an important process equipment for carrying silicon wafers in PECVD.
  • the composite tray in the prior art is generally made of one material.
  • the composite tray uses C/C composite material
  • the C/C composite material is one material.
  • a new type of high-performance structural and functional composite material which has excellent characteristics such as high strength, high modulus, high fracture toughness, high thermal conductivity, excellent heat insulation and low density; however, due to the high price of composite tray materials of C/C composite materials, Therefore, the number of composite trays with more C/C composite materials will inevitably increase investment, increase costs and maintenance costs, and the burrs generated on the composite trays will scratch the silicon wafers.
  • the composite trays of C/C composite materials also absorb water and gas.
  • the composite tray uses aluminum alloy material, but the single aluminum alloy material deforms greatly and conducts heat too quickly. Or the composite tray uses graphite material. Although a single graphite material has no burrs and less water absorption, it is not strong enough.
  • the purpose of the present invention is to provide an improved composite tray in view of the problems in the prior art.
  • a composite tray includes a support unit and a substrate for placing the support unit, each support unit is provided with a silicon wafer placement area for placing silicon wafers, the substrate and the support unit are made of different materials production.
  • the substrate is made of C/C composite material
  • the support unit is made of graphite material
  • a groove for placing the supporting unit is provided on the substrate, and the groove penetrates one end surface of the substrate.
  • an opening for placing the supporting unit is provided on the substrate, and the opening penetrates through opposite ends of the substrate.
  • the supporting unit is detachably connected to the substrate.
  • the composite tray further includes a connecting member for connecting the base plate and the supporting unit, and the connecting member is a bolt, a hook, a buckle or a sheet metal bead.
  • the base plate and the supporting unit are connected by a transition fit.
  • each of the supporting units is arranged independently of each other.
  • two adjacent support units have overlapping areas that overlap each other, and two adjacent support units are connected by a set of connecting pieces, and the connecting pieces are arranged at the position of the overlapping area. .
  • each supporting unit is integrally provided with at least one adjacent supporting unit to form a contiguous structure.
  • two adjacent pieces of the supporting units have overlapping areas that overlap each other, and two adjacent pieces of the supporting units are connected by a set of connecting pieces, and the connecting pieces are arranged at the position of the overlapping area. .
  • the multiple supporting units are arranged in a matrix on the substrate.
  • the supporting unit has multiple specifications, and the supporting units of various specifications are replaceably arranged on the substrate.
  • the four corners of the silicon wafer placement area of the supporting unit are provided with chamfers or rounded corners.
  • the sizes of the silicon wafer placement areas of the supporting units of various specifications are different.
  • the present invention has the following advantages compared with the prior art: the composite tray of the present invention is made of two different materials, which can overcome the defects that the composite tray is made of a single material. It satisfies the performance of strength, heat insulation, heat conduction, etc., and the cost is relatively low, which is conducive to batch use.
  • Figure 1 is a perspective view of the composite tray of the present invention
  • Figure 2 is a front view of the composite tray of the present invention.
  • Figure 3 is a partial enlarged view of A in Figure 2;
  • Figure 4 is a cross-sectional view along line A-A in Figure 3;
  • Figure 5 is a partial enlarged view of A in Figure 4.
  • Figure 6 is a schematic diagram of the structure of the supporting unit of the present invention (placement of right-angle silicon wafers);
  • Figure 7 is a partial enlarged view of A in Figure 6;
  • Figure 8 is a schematic diagram of the structure of the supporting unit of the present invention (place chamfered silicon wafers);
  • Fig. 9 is a partial enlarged view of A in Fig. 8.
  • Figure 10 is a schematic diagram of the connection structure between the substrate and the supporting unit of the present invention.
  • Fig. 11 is a partial enlarged view of A in Fig. 10.
  • FIGS. 1 to 5 which includes a base plate 1 and a supporting unit 2 arranged on the base plate 1.
  • the base plate 1 and the support unit 2 are made of different materials.
  • the base plate 1 is made of C/C composite material
  • the support unit 2 is made of graphite material.
  • the composite tray set in this way has both C/C composite
  • the material has excellent properties such as high strength, high modulus, high fracture toughness, high thermal conductivity, excellent heat insulation and low density. It also has the characteristics of low cost, low water absorption and no burrs of graphite material, which makes the production cost of composite pallets low.
  • the performance of the composite tray has the least impact on the silicon wafer coating process.
  • the substrate 1 is provided with a plurality of placement parts, preferably the plurality of placement parts are arranged in a matrix form, and each placement part is provided with a supporting unit 2.
  • the placement portion may be a groove provided on the substrate 1, and the groove here only penetrates one end surface of the substrate 1.
  • the placement portion may also be an opening provided on the substrate 1, and the opening penetrates the opposite end surfaces of the substrate 1.
  • the supporting unit 2 is also provided with a silicon chip placement area where the silicon chip 100 is placed. When the silicon wafer 100 is coated, the supporting unit 2 is installed in the placement portion on the substrate 1, and the silicon wafer 100 is placed in the silicon wafer placement area on the supporting unit 2.
  • the base plate 1 and the support unit 2 are detachably connected so that the support unit 2 can be replaced.
  • the support unit 2 has a variety of specifications.
  • the structure of the part where the support unit 2 of various specifications is connected to the base plate 1 remains the same.
  • the structure and size of the silicon wafer placement area of the supporting unit 2 are determined according to the size or structure of the silicon wafer 100, so that the silicon wafer placement area matches the silicon wafer 100 to be placed. For example, when the silicon wafer 100 is at a right angle, the four corners of the silicon wafer placement area of the support unit 2 are provided with notches 21 to avoid scratching the right angle of the silicon wafer 100, as shown in FIGS.
  • the four corners of the silicon wafer placement area of the support unit 2 are provided with chamfers 22 or round corners 22, as shown in FIGS. 8 and 9; or silicon wafers of various specifications of the support unit 2
  • the size of the placement area is different.
  • the composite tray also includes a connecting piece 3 for connecting the base plate 1 and the supporting unit 2.
  • the connecting piece 3 can be a bolt, a hook, a buckle or a sheet metal bead, as shown in Figs. 10 and 11.
  • the base plate 1 and the supporting unit 2 can also be connected by a transition fit, so that the connecting piece 3 is not required.
  • Each supporting unit 2 can be arranged independently of each other, that is, the supporting unit 2 is a single-piece structure. It is also possible that each supporting unit 2 is integrally provided with at least one adjacent supporting unit 2 to form a contiguous structure.
  • 36 placement parts are provided on the substrate 1, that is, the composite tray includes 36 support units. The 36 support units 2 and the 36 placement parts are all arranged in a 6 ⁇ 6 matrix. 2 Can form 1 ⁇ 2, 1 ⁇ 3, 1 ⁇ 4, 1 ⁇ 5..., 2 ⁇ 3, 2 ⁇ 4, 2 ⁇ 5..., 3 ⁇ 3, 3 ⁇ 4, 3 ⁇ 5, 3 ⁇ 6..., 4 ⁇ 4, 4 ⁇ 5, 4 ⁇ 6, etc. contiguous structure.
  • the connection structure between the supporting unit 2 and the base plate 1 can be reduced, thereby facilitating the installation and disassembly of the supporting unit 2.
  • the exposed area of the substrate 1 of the C/C composite material in the coating process can be reduced, thereby facilitating the coating process.
  • Two adjacent single-piece supporting units 2 or two adjacent continuous-piece supporting units 2 have overlapping areas between each other, which prevents the C/C composite substrate 1 from being exposed during the coating process. This is beneficial to the coating process.
  • two adjacent single-piece supporting units 2 or two adjacent continuous-piece supporting units 2 are connected by a set of connecting pieces 3.
  • the connecting pieces 3 are arranged at the position of the overlapping area, which can also reduce the support.
  • the number of connectors 3 between the unit 2 and the base plate 1 facilitates the installation and disassembly of the supporting unit 2.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

本发明公开了一种复合托盘，包括支撑单元以及用于搁置所述支撑单元的基板，每个所述支撑单元上均设置有用于放置硅片的硅片放置区，所述基板和所述支撑单元由不同材料制成。本发明的复合托盘采用两种不同的材料制成，可克服复合托盘使用单一材料制成所存在的缺陷，其既能满足强度、隔热、导热等方面的性能，而且成本相对较低，利于批量使用。

Description

一种复合托盘 技术领域
本发明涉及电池片制造技术领域，具体涉及一种复合托盘。
背景技术
硅片镀膜设备中的复合托盘是PECVD中承载硅片的重要工艺装备，现有技术中复合托盘一般使用一种材质制成，如复合托盘使用C/C复合材料，C/C复合材料是一种新型高性能结构、功能复合材料，其具有高强度、高模量、高断裂韧性、高导热、隔热优异和低密度等优异特性；但是由于C/C复合材料的复合托盘材料价格高，故多配C/C复合材料的复合托盘数量势必会增加投入，提高成本及维护费，且复合托盘上产生的毛刺会划伤硅片，另外，C/C复合材料的复合托盘还吸水气，从而对镀膜工艺造成影响。若复合托盘使用铝合金材料，但是单一铝合金材质变形大，导热过快。又或者复合托盘使用石墨材料，单一石墨材料虽然没有毛刺，吸水小一些，但是强度不够。
发明内容
本发明的目的是针对现有技术中的问题，提供一种改进的复合托盘。
为达到上述目的，本发明采用的技术方案是：
一种复合托盘，包括支撑单元以及用于搁置所述支撑单元的基板，每个所述支撑单元上均设置有用于放置硅片的硅片放置区，所述基板和所述支撑单元由不同材料制成。
优选地，所述基板由C/C复合材料制成，所述支撑单元由石墨材料制成。
优选地，所述基板上设置有用于放置所述支撑单元的凹槽，所述凹槽贯穿所述基板的一端面。
优选地，所述基板上设置有用于放置所述支撑单元的开孔，所述开孔贯穿所述基板的相对两端面。
优选地，所述支撑单元与所述基板相可拆卸地连接。
进一步地，所述复合托盘还包括用于连接所述基板与所述支撑单元的连接 件，所述连接件为螺栓、弯钩、卡扣或钣金压条。
进一步地，所述基板与所述支撑单元之间采用过渡配合连接。
优选地，所述支撑单元有多个，各个所述支撑单元之间相互独立设置。
进一步地，相邻两个所述支撑单元之间具有相互重叠的重叠区，相邻两个所述支撑单元之间通过一组连接件进行连接，所述连接件设置在所述重叠区位置处。
优选地，所述支撑单元有多个，每个所述支撑单元至少与和其相邻的一个所述支撑单元一体设置形成连片结构。
进一步地，相邻两片所述支撑单元之间具有相互重叠的重叠区，相邻两片所述支撑单元之间通过一组连接件进行连接，所述连接件设置在所述重叠区位置处。
优选地，所述支撑单元有多个，多个所述支撑单元在所述基板上呈矩阵形式排布。
优选地，所述支撑单元有多种规格，各种规格的所述支撑单元可更换地设置在所述基板上。
进一步地，所述支撑单元的硅片放置区的四个角上设置有切槽。
进一步地，所述支撑单元的硅片放置区的四个角上设置有倒角或圆角。
进一步地，各种规格的所述支撑单元的硅片放置区的尺寸大小不同。
由于上述技术方案的运用，本发明与现有技术相比具有下列优点：本发明的复合托盘采用两种不同的材料制成，可克服复合托盘使用单一材料制成所存在的缺陷，其既能满足强度、隔热、导热等方面的性能，而且成本相对较低，利于批量使用。
附图说明
附图1为本发明的复合托盘的立体图；
附图2为本发明的复合托盘的主视图；
附图3为附图2中A处局部放大图；
附图4为附图3中沿A-A线的剖视图；
附图5为附图4中A处局部放大图；
附图6为本发明的支撑单元的结构示意图(放置直角硅片)；
附图7为附图6中A处局部放大图；
附图8为本发明的支撑单元的结构示意图(放置倒角硅片)；
附图9为附图8中A处局部放大图；
附图10为本发明的基板与支撑单元之间的连接结构的示意图；
附图11为附图10中A处局部放大图。
具体实施方式
下面结合附图来对本发明的技术方案作进一步的阐述。
参见图1～图5所示的复合托盘，包括基板1和设置在基板1上的支撑单元2。
基板1和支撑单元2由不同的材料制成，本实施例中，基板1由C/C复合材料制成，支撑单元2由石墨材料制成，这样设置的复合托盘，既具有C/C复合材料高强度、高模量、高断裂韧性、高导热、隔热优异和低密度等优异特性，又具有石墨材料低成本、低吸水性及无毛刺的特点，从而使得复合托盘生产成本低，在硅片镀膜工艺中，复合托盘性能对硅片镀膜工艺的影响最小。
基板1上设置有多个放置部，优选多个放置部呈矩阵形式排布，每个放置部中均设置有一个支撑单元2。本实施例中，放置部可以为设置在基板1上的凹槽，此处的凹槽仅贯通基板1的一个端面。放置部也可以为设置在基板1上的开孔，该开孔贯通基板1的相对两端面。支撑单元2上还设置有放置硅片100的硅片放置区。当对硅片100进行镀膜时，支撑单元2安装在基板1上的放置部中，硅片100放置在支撑单元2上的硅片放置区中。
基板1和支撑单元2相可拆卸地连接，以使得可以更换支撑单元2，支撑单元2具有多种规格，各种规格的支撑单元2与基板1相连接的部位的结构保持一致，各种规格的支撑单元2的硅片放置区的结构及尺寸根据硅片100的尺寸不同或者结构形式不同来确定，使硅片放置区与需要放置的硅片100相匹配即可。如硅片100为直角时，支撑单元2的硅片放置区的四个角上均设置有切槽21，以免碰伤硅片100的直角处，如图6和图7所示；或者当硅片100为R角时，支撑单元2的硅片放置区的四个角上设置有倒角22或圆角22，如图8和图9所示；或者各种规格的支撑单元2的硅片放置区的尺寸大小不同。
该复合托盘还包括用于连接基板1和支撑单元2的连接件3，连接件3可以为螺栓、弯钩、卡扣或钣金压条，如图10和图11所示。当然基板1和支撑单元2之间也可采用过渡配合连接，这样，就无需设置连接件3。
各个支撑单元2之间可以相互独立设置，即支撑单元2为单片结构。也可以每个支撑单元2至少与和其相邻的一个支撑单元2一体设置形成连片结构。本实施例中，基板1上设置有36个放置部，即该复合托盘包括36个支撑单元，36个支撑单元2和36个放置部均按6×6的矩阵形式排布，此时支撑单元2可形成1×2、1×3、1×4、1×5...,2×3、2×4、2×5...,3×3、3×4、3×5、3×6...,4×4、4×5、4×6……等连片结构。当支撑单元2采用连片结构时，可减少支撑单元2与基板1之间的连接结构，从而方便支撑单元2的安装及拆卸。而且还可以减少镀膜工艺中C/C复合材料的基板1的暴露面积，从而有利于镀膜工艺。
相邻的两个单片的支撑单元2或者相邻的两个连片的支撑单元2之间具有相互重叠的重叠区，这使得镀膜工艺中C/C复合材料的基板1不会暴露出来，从而有利于镀膜工艺。而且相邻的两个单片的支撑单元2或者相邻的两个连片的支撑单元2之间通过一组连接件3进行连接，连接件3设置在重叠区位置处，这也可减少支撑单元2与基板1之间的连接件3的数量，从而方便支撑单元2的安装及拆卸。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并加以实施，并不能以此限制本发明的保护范围，凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围内。

Claims (16)

  1. 一种复合托盘，其特征在于：包括支撑单元以及用于搁置所述支撑单元的基板，每个所述支撑单元上均设置有用于放置硅片的硅片放置区，所述基板和所述支撑单元由不同材料制成。
  2. 根据权利要求1所述的复合托盘，其特征在于：所述基板由C/C复合材料制成，所述支撑单元由石墨材料制成。
  3. 根据权利要求1所述的复合托盘，其特征在于：所述基板上设置有用于放置所述支撑单元的凹槽，所述凹槽贯穿所述基板的一端面。
  4. 根据权利要求1所述的复合托盘，其特征在于：所述基板上设置有用于放置所述支撑单元的开孔，所述开孔贯穿所述基板的相对两端面。
  5. 根据权利要求1所述的复合托盘，其特征在于：所述支撑单元与所述基板相可拆卸地连接。
  6. 根据权利要求5所述的复合托盘，其特征在于：所述复合托盘还包括用于连接所述基板与所述支撑单元的连接件，所述连接件为螺栓、弯钩、卡扣或钣金压条。
  7. 根据权利要求5所述的复合托盘，其特征在于：所述基板与所述支撑单元之间采用过渡配合连接。
  8. 根据权利要求1所述的复合托盘，其特征在于：所述支撑单元有多个，各个所述支撑单元之间相互独立设置。
  9. 根据权利要求8所述的复合托盘，其特征在于：相邻两个所述支撑单元之间具有相互重叠的重叠区，相邻两个所述支撑单元之间通过一组连接件进行连接，所述连接件设置在所述重叠区位置处。
  10. 根据权利要求1所述的复合托盘，其特征在于：所述支撑单元有多个，每个所述支撑单元至少与和其相邻的一个所述支撑单元一体设置形成连片结构。
  11. 根据权利要求10所述的复合托盘，其特征在于：相邻两片所述支撑单元之间具有相互重叠的重叠区，相邻两片所述支撑单元之间通过一组连接件进行连接，所述连接件设置在所述重叠区位置处。
  12. 根据权利要求1所述的复合托盘，其特征在于：所述支撑单元有多个，多个所述支撑单元在所述基板上呈矩阵形式排布。
  13. 根据权利要求1所述的复合托盘，其特征在于：所述支撑单元有多种规格，各种规格的所述支撑单元可更换地设置在所述基板上。
  14. 根据权利要求13所述的复合托盘，其特征在于：所述支撑单元的硅片放置区的四个角上设置有切槽。
  15. 根据权利要求13所述的复合托盘，其特征在于：所述支撑单元的硅片放置区的四个角上设置有倒角或圆角。
  16. 根据权利要求13所述的复合托盘，其特征在于：各种规格的所述支撑单元的硅片放置区的尺寸大小不同。
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