WO2020248868A1 - 半导体加工装置及磁控溅射装置 - Google Patents

半导体加工装置及磁控溅射装置 Download PDF

Info

Publication number
WO2020248868A1
WO2020248868A1 PCT/CN2020/093859 CN2020093859W WO2020248868A1 WO 2020248868 A1 WO2020248868 A1 WO 2020248868A1 CN 2020093859 W CN2020093859 W CN 2020093859W WO 2020248868 A1 WO2020248868 A1 WO 2020248868A1
Authority
WO
WIPO (PCT)
Prior art keywords
pillars
pillar
work piece
tray
detection circuit
Prior art date
Application number
PCT/CN2020/093859
Other languages
English (en)
French (fr)
Inventor
武学伟
Original Assignee
北京北方华创微电子装备有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to KR1020217024604A priority Critical patent/KR102636473B1/ko
Publication of WO2020248868A1 publication Critical patent/WO2020248868A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering

Definitions

  • the present disclosure relates to a device, in detail, a semiconductor processing device and a magnetron sputtering device.
  • the tray is not a disposable consumable. After multiple use, it is easy to be damaged or even broken.
  • the current plasma system does not have the device and function to detect the tray status in real time, and the failure to know the tray status in time may indirectly lead to The wafers placed on the tray or other parts in the plasma system are damaged.
  • the present disclosure provides a semiconductor processing device and a related magnetron sputtering device to solve the problems in the background art, such as the problem caused by the inability to detect the status of a work piece (such as a tray) in real time.
  • a semiconductor processing device includes a chamber, a plurality of pillars placed in the chamber, and a base for supporting the plurality of pillars.
  • the root pillar is used to carry the work piece.
  • the semiconductor processing device includes a detection device coupled to at least two of the plurality of pillars, and configured to select any two of the at least two pillars coupled to the detection device.
  • the root pillar is detected to determine the state of the work piece.
  • a semiconductor processing device includes a chamber and a plurality of pillars placed in the chamber, and the plurality of pillars are used to carry a work piece.
  • the semiconductor processing device further includes a detection device, and the detection device includes a detection circuit and a processing circuit.
  • the detection circuit is connected to at least two pillars of the plurality of pillars, and the detection circuit is used to detect a gap between any two pillars of the at least two pillars connected to the detection circuit Electrical characteristics; the processing circuit is coupled to the detection circuit, and the processing circuit is used to notify the user of the semiconductor processing device of the electrical characteristics detected by the detection circuit.
  • a magnetron sputtering device includes a chamber, a base placed in the chamber, a plurality of pillars placed in the chamber, and a target. Materials, magnetrons and detection devices.
  • the multiple pillars are used to support the work piece; the base is used to support multiple pillars; the base drives the multiple pillars to move up and down; the target and the magnetron are placed in the chamber and used to The work piece performs thin film deposition;
  • the detection device is coupled to at least two of the plurality of pillars, and is configured to select any two of the at least two pillars coupled to the detection device The pillars are detected to determine the state of the work piece.
  • FIG. 1 is a cross-sectional view of a semiconductor processing apparatus according to an embodiment of the present disclosure.
  • Fig. 2 is a top view of a pillar standing on a base according to an embodiment of the present disclosure.
  • Fig. 3 is a schematic diagram of a detection device provided according to an embodiment of the present disclosure.
  • FIGS. 4A to 4D are schematic diagrams of detecting a tray by the detecting device according to an embodiment of the present disclosure.
  • 5A and 5B are schematic diagrams showing the operation of a processing circuit according to an embodiment of the present disclosure.
  • 6A to 6C are schematic diagrams of the pillars connected to the detection circuit through wires according to an embodiment of the present disclosure.
  • FIG. 7A and 7B are schematic diagrams of a wiring connection method provided according to an embodiment of the present disclosure.
  • 8A to 8F are schematic diagrams of wiring and pillar connection methods according to an embodiment of the present disclosure.
  • FIG. 9 is a cross-sectional view of a semiconductor processing apparatus according to another embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of a detection device provided according to another embodiment of the present disclosure.
  • 11A to 11B are schematic diagrams of detecting a tray by a detecting device according to another embodiment of the present disclosure.
  • 11C to 11D are schematic diagrams of detecting a tray according to another embodiment of the present disclosure.
  • Fig. 12 is a side view of a pillar standing on a base according to another embodiment of the present disclosure.
  • first and second features are in direct contact with each other; and may also include
  • additional components are formed between the above-mentioned first and second features, so that the first and second features may not be in direct contact.
  • present disclosure may reuse component symbols and/or labels in multiple embodiments. Such repeated use is based on the purpose of brevity and clarity, and does not in itself represent the relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms here such as “below”, “below”, “below”, “above”, “above” and similar, may be used to facilitate the description of the drawing
  • the relationship between one component or feature relative to another component or feature is shown.
  • these spatially relative terms also cover a variety of different orientations in which the device is in use or operation.
  • the device may be placed in other orientations (for example, rotated by 90 degrees or in other orientations), and these spatially-relative description words should be explained accordingly.
  • the wafer When performing a thin film deposition process on a wafer, the wafer is placed on a tray and transferred to the reaction chamber together. Taking a plasma processing device as an example, it completes thin film deposition by plasma bombarding the wafer.
  • the tray is not a disposable consumable. After repeated baking in a high-temperature environment, movement of the carrier wafer, and plasma bombardment, the tray is prone to breakage and the possibility of disc shattering.
  • there is no detection device to detect the status of the tray, so as to notify the system to stop operation in time when the tray is damaged or broken. This may cause other parts in the system to be sputtered and coated, or the robot arm collides with the broken one when removing the wafer. Pallets, etc., causing irreversible damage.
  • the present disclosure provides a semiconductor processing device, which can detect in real time whether a work piece (such as a tray) is damaged.
  • the semiconductor processing device provided by the present disclosure can also detect whether a work piece (such as a tray) is placed on a plurality of pillars, and whether it is correctly placed, so as to avoid placing a work piece (such as a tray) or a work piece (such as When the pallet is tilted, the system starts to execute the process.
  • FIG. 1 is a cross-sectional view of a semiconductor processing device 1 according to an embodiment of the present disclosure.
  • the semiconductor processing device 1 may be a device for performing semiconductor processes such as thin film deposition and etching on a processed part (such as a wafer).
  • the semiconductor processing device 1 is a magnetic Taking a controlled sputtering apparatus as an example, the structure of the semiconductor processing apparatus 1 will be described in detail.
  • the semiconductor processing apparatus 1 includes a chamber 10, a base 11 placed in the chamber 10, a plurality of pillars (for example, the three pillars 13, 14 and 15 shown in FIG. 1), a magnetron 16, and a target. 17. Insulation ring 18, cover ring 19 and detection device 20. Among them, three pillars 13, 14 and 15 are arranged on the base 11 at intervals along the circumferential direction of the base 11 to jointly support the work piece 12.
  • the work piece 12 is a tray for carrying processing pieces (such as wafers).
  • the base 11 may have a heating device (not shown in the figure) for heating the work piece 12.
  • the three pillars 13, 14 and 15 and the base 11 are made of conductive materials
  • the three pillars 13, 14 and 15 can be connected to the base 11 through three connectors 13', 14' and 15', respectively.
  • the connecting members 13 ′, 14 ′ and 15 ′ are used to fix the three pillars 13, 14 and 15 on the base 11, and electrically insulate the three pillars from the base 11.
  • the materials used for the three connecting members 13', 14' and 15' include at least an insulating material.
  • the target material 17 is arranged on the top of the chamber 10 and above the base 11; the magnetron 16 is arranged above the target material 17, and the target material 17 and the magnetron 16 are used to realize the processing of the workpiece 12 (Such as a wafer) for thin film deposition.
  • the semiconductor processing device 1 uses physical vapor deposition to perform thin film deposition on a processed part (such as a wafer).
  • the chamber 10 is filled with process gas , And use the excitation power supply of the semiconductor processing device 1 to apply a negative voltage to the target 17 to excite the process gas to form a plasma, and start bombarding the target 17 to process the work piece on the work piece (such as a tray) 12.
  • the base 11 can be raised and lowered, and can be raised to a processing position for processing, or lowered to a loading and unloading position for picking and placing operations of the work piece 12.
  • the cover ring 19 is carried by the insulation ring 18 when the base 11 is lowered from the process position. When the base 11 rises to the process position, the base 11 lifts the cover ring 19 to separate it from the heat insulation ring 18, and at this time the cover ring 19 uses its own gravity to press the edge area of the work piece 12.
  • the detection device 20 can be coupled to at least two of the three pillars 13, 14, 15 and detect the tray 12 by selecting any two pillars from the three pillars 13, 14, 15 coupled to it. status.
  • the term “coupled” means that two objects are indirectly in physical contact
  • the term “connected” means that two objects are in direct physical contact.
  • the term “electrical connection” means that there is an electrical path between two objects so that power can be transferred between the two objects.
  • the detection device 20 is coupled to the pillars 13 and 15 through the wires in the two pillars 13 and 15 as an example. The arrangement of the wiring in the pillars 13 and 15 and the connection to the detection device 20 will be described in subsequent paragraphs.
  • the semiconductor processing apparatus 1 also includes other necessary components for processing workpieces (such as wafers). However, for the sake of simplicity, FIG. 1 only depicts components related to the spirit of the present disclosure. .
  • the robot arm transfers the workpiece (such as a tray) 12 into the chamber 10 through the wafer transfer port on the chamber 10, and places the workpiece (such as a tray) 12 on the pillar 13, 14 and 15, when the work piece (such as a tray) 12 and the pillars 13, 14 and 15 are in contact with each other; then, the base 11 together with the pillars 13, 14 and 15 and the work piece (such as the tray) 12 rise at the same time, That is, move toward the direction close to the magnetron 16 and the target 17.
  • the work piece (such as the tray) 12 lifts the cover ring 19 to separate it from the heat insulation ring 18; when the base 11 rises to the process After the position, the work piece (such as the pallet) 12 can be processed.
  • the detection device 20 is coupled to the pillars 13, 15 through the wires in the pillars 13, 15, and the work piece (such as a pallet) 12 is always kept connected to the three pillars 13, 14 and 15 after being placed on the three pillars 13, 14 and 15 by the robot arm.
  • the pillars 13, 14 and 15 are in contact, so that the detection device 20 is always electrically connected to the work piece (such as a tray) 12 through the pillars 13, 15 so that no matter the work piece (such as a tray) 12 is placed on the pillars 13, 14
  • the inspection device 20 can perform the detection of the workpiece (such as a pallet) 12 Status is checked.
  • FIG. 2 is a top view of the pillars 13, 14 and 15 standing on the base 11 according to an embodiment of the present disclosure.
  • the base 11 and the work piece (such as a tray) 12 are roughly similar in shape, and the three pillars 13, 14 and 15 are symmetrically distributed with respect to the center of the base 11. It is the center of the circle, and the standard position of the work piece (such as a pallet) 12 on the pillar should meet: when the robot arm places the work piece (such as the pallet) 12 on the pillar, the center of the work piece (such as the pallet) 12
  • the center of the base 11 is centered to ensure that the three pillars 13, 14, 15 can stably support a work piece (such as a tray) 12.
  • the number of pillars can be set to four, five or more than six according to specific needs.
  • the shape of the base and the tray, as well as the distribution of the pillars can be freely set. As long as the effect of stably supporting the work piece (such as the tray) 12 can be achieved, it should fall within the scope of the present disclosure.
  • FIG. 3 is a schematic diagram of a detection device 20 provided according to an embodiment of the present disclosure.
  • the detection device 20 includes a detection circuit 21 and a processing circuit 22.
  • the detection circuit 21 is connected between the two pillars 13 and 15 for detecting electrical characteristics between the two pillars 13 and 15.
  • the detection circuit 21 includes a first detection terminal T1 and a second detection terminal T2.
  • the first detection terminal T1 is coupled to the pillar 13 through a connection L1
  • the second detection terminal T2 is coupled through a connection L2.
  • the processing circuit 22 is coupled to the detection circuit 21 for determining the state of the work piece (such as the tray) 12 according to the electrical characteristics detected by the detection circuit 21.
  • FIG. 4A to 4D are schematic diagrams of detecting a work piece (such as a tray) 12 by the detecting device 20 according to an embodiment of the present disclosure.
  • the detection circuit 21 is connected to the two pillars 13, 15.
  • the robot arm places the work piece (such as a tray) 12 on the three pillars 13, 14, and 15, the detection circuit 21 passes through the two pillars.
  • the pillars 13, 15 are electrically connected to the work piece (e.g. tray) 12.
  • the work piece e.g.
  • tray 12 is complete and placed on the three pillars normally, the work piece ( For example, a tray) 12 forms an electrical path 4; as shown in Figures 4A to 4D, when a work piece (such as a tray) 12 is damaged, tilted, or there is no work piece (such as a tray) 12 on the pillar, one of the two pillars 13, 15 The electrical path 4 between them does not exist.
  • the detection circuit 21 to detect the electrical characteristics between the two pillars 13, 15 in real time, it can be determined whether the state of the work piece (such as the tray) 12 is normal, that is, If there is an electrical pathway 4, it can be confirmed that the work piece (such as a pallet) 12 is complete and placed on the three pillars normally; if there is no electrical pathway 4, it can be confirmed that the work piece (such as a tray) 12 may occur If it is damaged, inclined or there is no work piece (such as a pallet) on the pillar) 12.
  • the electrical characteristic may be resistance or current.
  • the detection circuit 21 can detect the resistance value between the two pillars 13 and 15, and the processing circuit 22 determines the state of the work piece (such as the tray) 12 according to the resistance value detected by the detection circuit 21.
  • the material of the work piece (such as the tray) 12 is silicon carbide, and the corresponding relationship between the volume resistivity and the temperature is shown in Table 1.
  • Table 1 the corresponding relationship between the volume resistivity of the work piece (such as the tray) 12 and the temperature.
  • the volume resistivity of silicon carbide at a temperature of 500°C is 103 ⁇ cm, while the temperature of the work piece (such as a tray) 12 under high-temperature baking is close to 500°C.
  • two The resistance between the pillars 13 and 15 is in the order of kiloohms, so that when the resistance value detected by the detection circuit 21 is not in the order of kiloohms, the processing circuit 22 can determine the state of the work piece (such as a tray) 12 Is abnormal.
  • the present disclosure does not limit the material of the work piece (such as a tray) 12.
  • the work piece (such as a tray) 12 may be made of any other material such as a metallic material such as molybdenum or steel.
  • the material of the tray) 12 is different, the volume resistivity is also different, the resistance value between the two pillars 13, 15 is also correspondingly different, so that the processing circuit 22 determines the condition of the work piece (such as the tray) 12 should also be adaptive Make adjustments.
  • the detection circuit 21 detects The measured resistance value will be much larger than the order of kiloohms, and the processing circuit 22 determines that the state of the work piece (such as the tray) 12 is abnormal according to the resistance value detected by the detection circuit 21.
  • the processing circuit 22 determines that the state of the work piece (such as the tray) 12 is abnormal according to the resistance value detected by the detection circuit 21.
  • the state in which the processing circuit 22 determines that the work piece (such as the tray) 12 is abnormal may include the work piece (such as the tray) 12 being broken, inclined, or not placed.
  • this is not a limitation of the present disclosure.
  • the processing circuit 21 will determine that the state of the work piece (such as the tray) 12 is abnormal.
  • the detection circuit 21 may not directly detect the resistance between the two pillars 13, 15 but variably, the detection circuit 21 may detect the current between the two pillars 13, 15, and the processing circuit 22 is based on The current detected by the detection circuit 21 is used to determine the state of the work piece (such as the tray) 12.
  • the detection circuit 21 outputs current to the work piece (such as a tray) 12 through one of the wiring L1 or the wiring L2, and receives it from the work piece (such as a tray) 12 through the other of the wiring L1 or the wiring L2 Current, the processing circuit 22 determines the state of the work piece (such as the tray) 12 according to whether the detection circuit 21 can receive the current.
  • an electrical path 4 is formed between the two pillars 13, 15 through the work piece (such as the tray) 12, at this time, the detection circuit 21 can receive According to the current of the work piece (such as the tray) 12, the processing circuit 22 determines that the state of the work piece (such as the tray) 12 is normal; when the state of the work piece (such as the tray) 12 is shown in Figures 4B, 4C, and 4D, due to electricity
  • the absence of the sexual path 4 causes the detection circuit 21 to fail to receive the current from the work piece (such as the tray) 12, and the processing circuit 22 determines that the state of the work piece (such as the tray) 12 is abnormal.
  • the processing circuit 22 when the processing circuit 22 determines that the state of the work piece (such as a tray) 12 is abnormal, the processing circuit 22 can directly issue a termination instruction, and the semiconductor processing apparatus 1 stops operating according to the termination instruction, and the user of the semiconductor processing apparatus 1 is to be eliminated Abnormal conditions, such as replacing a broken work piece (such as a pallet) 12 or placing the work piece (such as a pallet) 12 on the three pillars 13, 14, and 15 before restarting the semiconductor processing device 1, thus avoiding semiconductor processing
  • the device 1 continues to perform processing when the state of the work piece (such as the tray) 12 is abnormal, causing irreversible damage to other parts in the semiconductor processing device 1.
  • the present disclosure does not limit the processing circuit 22 to actively terminate the operation of the semiconductor processing apparatus 1.
  • the processing circuit 22 can display the abnormal state of the work piece (such as a tray) 12 on the external display device 50 of the semiconductor processing apparatus 1 to notify The user of the semiconductor processing device 1 serves as a warning.
  • the processing circuit 22 can also notify the user of the abnormal state of the work piece (such as the tray) 12 through other passive methods, such as high-frequency sound or flashing light, to achieve a warning effect.
  • the present disclosure does not limit the manner in which the processing circuit 22 notifies the abnormal state of the work piece (such as the tray) 12.
  • the detection circuit 21 is coupled to the two pillars 13, 15 through the wires in the two pillars 13, 15 to detect the state of the work piece (such as a tray) 12 as an example.
  • the combination of the detection circuit 21 coupled to other pillars can also apply the technical means of detecting the state of the work piece (such as the tray) 12 in the above embodiment.
  • 6A, 6B and 6C in FIG. 6A, the first detection terminal T1 of the detection circuit 21 is coupled to the pillar 13 through the wiring in the pillar 13 and the second detection terminal T2 is coupled through the wiring in the pillar 15 To the pillar 15; in FIG.
  • the first detection terminal T1 of the detection circuit 21 is coupled to the pillar 13 through the wiring in the pillar 13 and the second detection terminal T2 is coupled to the pillar 14 through the wiring in the pillar 14;
  • the first detection terminal T1 of the detection circuit 21 is coupled to the pillar 14 through the wiring in the pillar 14 and the second detection terminal T2 is coupled to the pillar 15 through the wiring in the pillar 15.
  • the first detection terminal T1 and the second detection terminal T2 of the detection circuit 21 are respectively coupled to the end of the pillar away from the base 11, and touch them directly or indirectly.
  • the work piece (such as a tray) 12 is touched to detect the electrical characteristics of the work piece (such as the tray) 12 placed between the pillars.
  • the wiring in the pillar is connected to the first detection terminal T1 and the second detection terminal T2 of the detection circuit 21 in the manner shown in the embodiment of FIG. 7A or FIG. 7B.
  • the detection circuit 21 is coupled to the two pillars 13 and 14 through the wires in the two pillars 13 and 14 as examples.
  • the wiring in the pillar and the corresponding pillar are integrally formed.
  • the wiring in the pillar and the corresponding pillar are manufactured separately. Buried the wiring in the pillar. The present disclosure does not limit the formation of the wiring and the pillar.
  • one end of the wire L1 buried in the pillar 13 is connected to the end of the pillar 13 away from the base 11, and directly or indirectly touches the work piece (such as a tray) 12, and the other end of the wire L1 is located on the base.
  • One end 71 of the hole on the upper surface of 11 penetrates, and passes from the other end 72 of the hole on the lower surface of the base 11, and is connected to the first detection terminal T1; similarly, the wire L2 buried in the pillar 14
  • One end of the L2 is connected to the end of the pillar 14 away from the base 11 to directly or indirectly touch the work piece (such as a tray) 12, and the other end of the wiring L2 penetrates through the end 73 of the hole on the upper surface of the base 11, and From the other end 74 of the hole located on the lower surface of the base 11, it is connected to the second detecting end T2.
  • the detection circuit 21 is connected to the pillar by the method disclosed in this embodiment, and the wiring is hidden in the base 11 to prevent the wiring from being exposed in the cavity 10, which may cause the wiring to be damaged during the processing of the processed part (such as wafer).
  • the high temperature environment affects and damages, resulting in the detection circuit 21 being unable to connect to the pillar smoothly.
  • one end of the wire L1 buried in the pillar 13 is connected to the end of the pillar 13 away from the base 11, and directly or indirectly touches the work piece (such as a tray) 12, and the other end of the wire L1 passes through the connector
  • the hole 75 on 13' is connected to the first detection terminal T1; similarly, one end of the wire L2 buried in the pillar 14 is connected to the end of the pillar 14 away from the base 11 to directly or indirectly touch the work piece ( For example, the tray) 12, the other end of the wire L2 passes through the hole 76 on the connector 14' to connect to the second detection terminal T2.
  • the wires L1 and L2 can be fixed in the holes 75 and 76 by soldering, respectively.
  • the detection circuit 21 and the pillar are connected by the method disclosed in this embodiment, and the wiring has a relatively flexible design space.
  • the detection circuit can be realized by arranging holes 75 and 76 at any positions on the connecting pieces 13' and 14'. 21 is connected to the corresponding pillars 13 and 14.
  • FIGS. 8A to 8F respectively depict different embodiments of the wire contacting work piece (such as a tray) 12 buried in the pillar, and the pillar 13 is used as an example in the embodiment of FIGS. 8A to 8F.
  • the pillar 13 may be conductive.
  • the pillar 13 as a whole is made of conductive material.
  • One end of the wire L1 buried in the pillar 13 is directly connected to the terminal 81 at the upper end of the pillar 13, whereby the detection circuit 21 indirectly contacts the work piece (such as a tray) 12 through the wire L1 and the pillar 13 to detect electrical characteristics.
  • most of the pillars 13 cannot conduct electricity, and only the upper surface or part of the surface contacting the work piece (such as the tray) 12 can conduct electricity.
  • most of the pillar 13 is made of insulating material, and only the upper surface or part of the surface contacting the work piece (such as the tray) 12 is made of conductive material.
  • a surface made of a conductive material is indicated by a dotted line.
  • One end of the wiring L1 buried in the pillar 13 is directly connected to the upper end 82 of the pillar 13 made of conductive material, whereby the detection circuit 21 indirectly contacts the work piece (such as a tray) 12 through the wiring L1 and the pillar 13 To detect electrical characteristics.
  • a hole is provided in the pillar 13, and one end 83 of the hole is located on the surface of the upper part of the pillar 13 that contacts the work piece (such as a tray) 12, and is buried in the wiring L1 in the pillar 13 One end of is exposed from one end 83 of the hole so as to be able to directly contact the work piece (such as a tray) 12, whereby the detection circuit 21 directly contacts the work piece (such as a tray) 12 through the wire L1 to detect electrical characteristics.
  • the material of the pillar 13 is not limited, and it can be made of a conductive material, an insulating material, or any other material.
  • the pillar 13 is provided with a hole, one end 84 of the hole is located on the upper surface of the pillar 13, and the upper surface is covered with a conductor 85, which is used to connect two Contact, one end of the wire L1 buried in the pillar 13 is directly connected to the conductor 85 from the end 84 of the hole, whereby the detection circuit 21 indirectly contacts the work piece (such as a tray) 12 through the wire L1 and the conductor 85 to detect electricity Sexual characteristics.
  • connection between the wiring and the pillar may be welding, or crimping, flange connection, etc. to ensure electrical connection, and the present disclosure is not limited to this.
  • a temperature detecting component 86 is provided inside the pillar 13.
  • the temperature detecting component 86 is a thermocouple.
  • the temperature detecting component 86 is connected to a temperature detecting device (not shown) with two wires La and Lb to detect the temperature of the work piece (such as a tray) 12.
  • a shell-type thermocouple is used to detect The temperature of the work piece (such as the tray) 12 is measured, and the temperature detection component 86 is exposed from the upper surface of the support 13 so as to be able to directly contact the work piece (such as the tray) 12. Since the temperature detection component 86 itself is conductive, therefore, One of the two wires La and Lb of the temperature detecting component 86 can be used as a wire L1 to be connected to the detection circuit 21 for detecting electrical characteristics.
  • the pillar 13 includes a temperature detecting component 87 inside.
  • the temperature detecting component 87 is a thermocouple.
  • the temperature detection component 87 is connected to a temperature detection device (not shown) with two wires La' and Lb' to detect the temperature of the work piece (such as a tray) 12.
  • a non-shell type is adopted.
  • the thermocouple detects the temperature of the work piece (such as the tray) 12, and the temperature detection component 87 is located below the upper surface of the pillar 13 and is not exposed.
  • another wire can be used as the aforementioned wire L1
  • One end of the wire is directly or indirectly in contact with the work piece (such as a tray) 12, and the other end is connected to the detection circuit 21.
  • the wiring L1 shown in FIGS. 8A to 8D can be used to directly or indirectly connect the work piece (such as a tray) 12, and those skilled in the art should be able to easily understand FIGS. 8F and 8A to The detailed description of the combination of FIG. 8D is omitted here to save space.
  • FIG. 9 is a cross-sectional view of a semiconductor processing apparatus 9 according to another embodiment of the present disclosure. Similar to the semiconductor processing device 1, the semiconductor processing device 9 can be a device for performing semiconductor processes such as thin film deposition and etching on a processed part (such as a wafer). In this embodiment, the semiconductor processing device 9 is a kind of A magnetron sputtering apparatus is taken as an example, and the structure of the semiconductor processing apparatus 9 will be described in detail.
  • the semiconductor processing apparatus 9 includes a chamber 90, a base 91 placed in the chamber 90, a plurality of pillars (for example, the three pillars 93, 94, and 95 shown in FIG. 9), and three connecting members 93' , 94' and 95', magnetron 96, target 97, heat insulation ring 98, cover ring 99 and detection device 30.
  • the chamber 90, the base 91, the three pillars 93, 94 and 95, the three connecting pieces 93', 94' and 95', the magnetron 96, the target material 97, the heat insulation ring 98 and the cover ring 99 The corresponding components described in the embodiments are the same, and the detailed description is omitted here to save space.
  • the detection device 30 is coupled to the three pillars 93, 94 and 95 through wires in the three pillars 93, 94 and 95 to determine the state of the work piece 92.
  • the work piece 92 is a tray for carrying processed pieces (such as wafers).
  • FIG. 10 is a schematic diagram of a detection device 30 provided according to an embodiment of the present disclosure.
  • the detection device 30 includes a detection circuit 31 and a processing circuit 32.
  • the detection circuit 31 is respectively coupled to the three pillars 93, 94, and 95 through three groups of wiring groups L3, L4, and L5.
  • Each wiring group includes two wirings.
  • the wiring group L3 includes two wirings L3a and L3b.
  • the wiring group L4 includes two wirings L4a and L4b
  • the wiring group L5 includes two wirings L5a and L5b.
  • the detection circuit 31 is used for detecting electrical characteristics between the pillar 93 and the pillar 94, between the pillar 93 and the pillar 95, and between the pillar 94 and the pillar 95.
  • the detection circuit 31 includes a first detection terminal T1', a second detection terminal T2', and a third detection terminal T3', wherein the first detection terminal T1' is coupled to the pillar 93 through the wiring set L3 , The second detection terminal T2' is coupled to the pillar 94 through the wiring set L4, and the third detection terminal T3' is coupled to the pillar 95 through the wiring set L5.
  • the processing circuit 32 is coupled to the detection circuit 31, and the processing circuit 32 is used to determine the state of the work piece (such as a tray) 92 according to the electrical characteristics detected by the detection circuit 31.
  • FIGS. 11A to 11D are schematic diagrams of detecting a work piece (such as a tray) 92 by the detecting device 30 according to an embodiment of the present disclosure.
  • the detection circuit 31 is connected to the three pillars 93, 94, and 95 through three sets of wiring groups L3, L4, and L5.
  • the robot arm places a work piece (such as a tray) 92 on one of the three pillars 93, 94, and 95
  • the detection circuit 31 is electrically connected to the work piece (such as a tray) 92 through three pillars 93, 94, and 95.
  • the pillar An electrical path 5 is formed between the support 93 and the pillar 95 through the tray 92
  • the electrical path 6 is formed between the support 93 and the support 94 through a work piece (such as a tray) 92
  • the work piece (such as a tray) passes between the support 94 and the support 95 92 forms an electrical path 7.
  • the electrical pathways 5, 6 and/or 7 do not exist.
  • the detection circuit 31 detects the three pillars in real time
  • the electrical characteristics between any two pillars can determine whether the state of the work piece (such as the tray) 12 is normal, that is, if the electrical pathways 5, 6 and 7 are all present, the work piece (such as the tray) can be confirmed 12 is complete and placed on the three pillars normally; if one of the electrical pathways does not exist, it can be confirmed that the work piece (such as a tray) 12 may be damaged, inclined or there is no work piece such as a tray on the pillar) 12 .
  • the detection circuit 31 detects in real time the electrical characteristics between the pillar 93 and the pillar 95, the electrical characteristics between the pillar 93 and the pillar 94, and the electrical characteristics between the pillar 94 and the pillar 95, and the processing circuit 32 according to the detection
  • the electrical characteristics detected by the test circuit 31 determine the state of the work piece (such as the tray) 92.
  • the electrical characteristic may be resistance or current.
  • the detection circuit 31 detects the resistance between the pillars 93 and 95 through the wiring L3a and L5a; the detection circuit 31 detects the resistance between the pillars 93 and 94 through the wiring L3b and L4a; the detection circuit 31 through the wiring L4b and L5b detect the resistance value between the pillars 94 and 95.
  • the processing circuit 32 determines the state of the work piece (such as the tray) 92 according to the resistance value detected by the detection circuit 31.
  • the processing circuit 22 can determine that the state of the work piece (such as the tray) 92 is abnormal.
  • the detection circuit 31 detects the resistance value between the pillar 93 and the pillar 95 and the resistance between the pillar 94 and the pillar 95 The value will be much larger than the kiloohm level, and the processing circuit 32 determines that the state of the work piece (such as the tray) 92 is abnormal according to the resistance value detected by the detection circuit 31.
  • the detection circuit 31 detects
  • the measured resistance value between the pillar 93 and the pillar 95, the resistance value between the pillar 93 and the pillar 94, and the resistance value between the pillar 94 and the pillar 95 are all on the order of kiloohms, and the processing circuit 32 depends on the detection circuit
  • the resistance value detected by 31 determines that the state of the work piece (such as the tray) 92 is abnormal.
  • the detection circuit 31 detects the pillars 93 and 95
  • the resistance value between the pillar 93 and the pillar 94, and the resistance value between the pillar 94 and the pillar 95 are also much larger than the order of kiloohms.
  • the processing circuit 32 depends on the detection circuit 31. The resistance value judges that the state of the work piece (such as the tray) 92 is abnormal.
  • the state in which the processing circuit 32 determines that the work piece (such as the tray) 92 is abnormal may include the work piece (such as the tray) 92 being broken, inclined, or not placed. However, this is not a limitation of the present disclosure. If any of the electrical paths 5, 6 and 7 does not exist, the processing circuit 31 will determine that the state of the work piece (such as the tray) 92 is abnormal.
  • the detection circuit 31 may not directly measure the resistance value between the pillar 93 and the pillar 95, the resistance value between the pillar 93 and the pillar 94, and the resistance value between the pillar 94 and the pillar 95.
  • the detection circuit 31 can detect the magnitude of the current between the pillar 93 and the pillar 95, between the pillar 93 and the pillar 94, and between the pillar 94 and the pillar 95, and the processing circuit 32 is based on the current detected by the detection circuit 31
  • the status of the work piece (such as the tray) 92 is determined.
  • the detection circuit 31 outputs current to the work piece (such as a tray) 92 through one of the wiring L3a or the wiring L5a, and receives it from the work piece (such as a tray) 92 through the other wiring of the wiring L3a or the wiring L5a
  • the processing circuit 32 determines the status of the work piece (such as the tray) 92 according to whether the detection circuit 31 can receive the current.
  • an electrical path 5 is formed between the pillar 93 and the pillar 95 through the work piece (such as the tray) 12.
  • the detection circuit 31 can receive According to the current of the work piece (such as the tray) 12, the processing circuit 32 determines that the state of the work piece (such as the tray) 12 is normal; when the state of the work piece (such as the tray) 92 is shown in Figures 11B, 11C, and 11D, due to electricity
  • the absence of the sexual path 5 causes the detection circuit 31 to fail to receive current from the work piece (such as the tray) 92, and the processing circuit 32 determines that the state of the work piece (such as the tray) 92 is abnormal.
  • the detection circuit 31 outputs current to the work piece (such as a tray) 92 through one of the wiring L3b or the wiring L4a, and receives current from the work piece (such as a tray) 92 through the other wiring of the wiring L3b or the wiring L4a ,
  • the processing circuit 32 determines the state of the work piece (such as the tray) 92 according to whether the detection circuit 31 can receive the current.
  • an electrical path 6 is formed between the pillar 93 and the pillar 94 through the work piece (such as the tray) 12.
  • the detection circuit 31 can receive the work According to the current of the work piece (such as the tray) 12, the processing circuit 32 determines that the state of the work piece (such as the tray) 12 is normal; when the state of the work piece (such as the tray) 92 is shown in Figures 11B, 11C, 11D, due to electrical The path 6 does not exist, so that the detection circuit 31 cannot receive the current from the work piece (such as the tray) 92, and the processing circuit 32 judges that the state of the work piece (such as the tray) 92 is abnormal.
  • the detection circuit 31 outputs current from one of the wiring L4b or the connection L5b to the work piece (such as a tray) 92, and receives current from the work piece (such as a tray) 92 through the other of the wiring L4b or the wiring L5b, and processes the circuit 32 determines the state of the work piece (such as the tray) 92 according to whether the detection circuit 31 can receive the current.
  • the tray 12 is intact and unbroken, and is normally placed on the three pillars, an electrical path 7 is formed between the pillar 94 and the pillar 95 through the work piece (such as the tray) 12.
  • the detection circuit 31 can receive the work According to the current of the work piece (such as the tray) 12, the processing circuit 32 determines that the state of the work piece (such as the tray) 12 is normal; when the state of the work piece (such as the tray) 92 is shown in Figures 11B, 11C, 11D, due to electrical The path 7 does not exist, so that the detection circuit 31 cannot receive current from the work piece (such as the tray) 92, and the processing circuit 32 determines that the state of the work piece (such as the tray) 92 is abnormal.
  • the above-mentioned processing circuit 32 can notify the abnormal state of the work piece (such as the tray) 92 according to the method adopted by the processing circuit 22 shown in FIG. 5A and FIG. 5B, for example, display the abnormal state of the work piece (such as the tray) on the semiconductor processing device
  • the external display device to notify the user of the semiconductor processing device, to achieve a warning effect.
  • the detailed description is omitted here to save space.
  • the wiring of the three pillars 93, 94 and 95 and the detection circuit 31 can be connected according to the wiring of the three pillars 13, 14 and 15 and the detection circuit 21 shown in FIGS. 7A, 7B and FIGS. 8A to 8F. The detailed description is omitted here to save space.
  • the present disclosure does not limit the number and style of the pillars in the semiconductor processing device, and the connection with the detection circuit, only the pillars and the work piece (such as The contact of the tray) to detect the electrical characteristics between the pillars and the pillars can effectively determine whether the state of the work piece (such as the tray) is abnormal, thereby avoiding the abnormal state of the work piece (such as the tray) in the semiconductor processing device.
  • Other accessories have irreversible damage.
  • the pillar in the semiconductor processing apparatus 1 or 9 may be a thimble on the base 11 or 91, with a telescopic mechanism, which can control the pillar to rise and fall on the base to support a work piece (such as a tray).
  • a telescopic mechanism which can control the pillar to rise and fall on the base to support a work piece (such as a tray).
  • the present disclosure is not limited to this.
  • the pillar may be a component that is additionally provided on the base to support a work piece (such as a tray) in addition to the thimble. Referring to FIG. 12, the base 51, the three pillars 53, 54 and 55, and the work piece (such as the tray) 52 shown in FIG.
  • the base 51 is additionally provided with three The supporting parts 56, 57 and 58, three groups of wiring groups L6, L7 and L8 are respectively provided in the three supporting parts 56, 57 and 58 to connect the detection device. In this way, the detection device can pass through the three groups of wiring groups L6, L7. And L8 to detect the electrical characteristics between the three supports 56, 57, 58.
  • the three support members 56, 57 and 58 can be connected to the base 51 by connecting members like the three pillars 13, 14 and 15 or the three pillars 93, 94, and 95 in the foregoing embodiment.
  • connection mode of the three groups of wiring groups L6, L7, and L8 in the three support members 56, 57, and 58 please refer to the embodiments of FIGS. 7A, 7B and FIGS. 8A to 8F.
  • Those with ordinary knowledge in the art should read the above implementation After the example, it should be easy to understand how to detect electrical characteristics through the detection device and the three support members 56, 57, and 58, and determine the status of the work piece (such as the tray) 52. The detailed description is omitted here to save space.
  • the electrical characteristics between the pillars can be detected in real time by directly or indirectly connecting the work piece (such as a tray) through the wiring in the pillars.
  • the detection device can determine that the status of the work piece (such as the tray) is abnormal, and then actively stop the operation of the system or passively inform the user to avoid irreversible damage caused by the accessories in the system.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本公开提供一种半导体加工装置，所述半导体加工装置包括腔室、置于所述腔室内的多根支柱以及用于支撑所述多根支柱的基座，所述多根支柱用于承载工作件，所述半导体加工装置包括检测装置，所述检测装置耦接至所述多根支柱中的至少两根支柱，用于通过从与检测装置耦接的至少两根支柱中选择任意两根支柱进行侦测，来判断所述工作件的状态。本公开还提供一种磁控溅射装置。本公开的实施例解决了现有技术不能实时检测工作件(如托盘)的状态所产生的问题。

Description

半导体加工装置及磁控溅射装置 技术领域
本公开是有关于一种装置，详细来说，是一种半导体加工装置及磁控溅射装置。
背景技术
传统上，在对晶圆进行薄膜沉积工艺时，通常会连同托盘及其承载的晶圆同时送入等离子体系统的反应腔室内部，以进行等离子体轰击，从而完成薄膜沉积。然而，托盘并非一次性耗材，在多次的使用后，容易产生破损甚至碎盘的可能，但是，目前等离子体系统不具有实时检测托盘状态的装置与功能，无法及时获知托盘状态可能会间接导致放置于托盘上的晶圆或等离子体系统内其他配件受损。
发明内容
本公开提供一种半导体加工装置以及相关磁控溅射装置来解决背景技术中的问题，如不能实时检测工作件(如托盘)的状态所产生的问题。
依据本公开的一个实施例，公开一种半导体加工装置，所述半导体加工装置包括腔室、置于所述腔室内的多根支柱以及用于支撑所述多根支柱的基座，所述多根支柱用于承载工作件。所述半导体加工装置包括检测装置，所述检测装置耦接至所述多根支柱中的至少两根支柱，用于通过从与所述检测装置耦接的所述至少两根支柱中选择任意两根支柱进行侦测，来判断所述工作件的状态。
依据本公开的一个实施例，公开一种半导体加工装置，所述半导体加工装置包括腔室以及置于所述腔室内的多根支柱，所述多根支柱用于承载工作 件。所述半导体加工装置还包括检测装置，所述检测装置包括侦测电路及处理电路。所述侦测电路与所述多根支柱中的至少两根支柱连接，所述侦测电路用于侦测与所述侦测电路连接的所述至少两根支柱中任意两根支柱之间的电性特征；所述处理电路耦接至所述侦测电路，所述处理电路用于将所述侦测电路侦测到的所述电性特征通知所述半导体加工装置的用户。
依据本公开的一个实施例，公开一种磁控溅射装置，所述磁控溅射装置包括腔室、置于所述腔室内的基座、置于所述腔室内的多根支柱、靶材、磁控管以及检测装置。所述多根支柱用于支撑工作件；基座用于支撑多根支柱；基座带动多根支柱进行升降运动；所述靶材以及所述磁控管置于所述腔室内，并用于对所述工作件进行薄膜沉积；所述检测装置耦接至所述多根支柱中的至少两根支柱，用于通过从与所述检测装置耦接的所述至少两根支柱中选择任意两根支柱进行侦测，来判断所述工作件的状态。
附图说明
图1是依据本公开一实施例提供的半导体加工装置的剖视图。
图2是依据本公开一实施例提供的支柱立于基座之上的俯视图。
图3是依据本公开一实施例提供的检测装置的示意图。
图4A至4D是依据本公开一实施例提供的检测装置检测托盘的示意图。
图5A与5B是依据本公开一实施例提供的处理电路操作示意图。
图6A至6C是依据本公开一实施例提供的支柱通过接线连接至侦测电路的示意图。
图7A与7B是依据本公开一实施例提供的接线连接方式的示意图。
图8A至8F是依据本公开一实施例提供的接线与支柱连接方式的示意图。
图9是依据本公开另一实施例提供的半导体加工装置的剖视图。
图10是依据本公开另一实施例提供的检测装置的示意图。
图11A至11B是依据本公开另一实施例提供的检测装置检测托盘的示意图。
[根据细则91更正 21.09.2020]　
图11C至11D是依据本公开另一实施例提供的检测装置检测托盘的示意图。
图12是依据本公开另一实施例提供的支柱立于基座之上的侧视图。
具体实施方式
以下揭示内容提供了多种实施方式或例示，其能用以实现本揭示内容的不同特征。下文所述之组件与配置的具体例子系用以简化本揭示内容。当可想见，这些叙述仅为例示，其本意并非用于限制本揭示内容。举例来说，在下文的描述中，将一第一特征形成于一第二特征上或之上，可能包括某些实施例其中所述的第一与第二特征彼此直接接触；且也可能包括某些实施例其中还有额外的组件形成于上述第一与第二特征之间，而使得第一与第二特征可能没有直接接触。此外，本揭示内容可能会在多个实施例中重复使用组件符号和/或标号。此种重复使用乃是基于简洁与清楚的目的，且其本身不代表所讨论的不同实施例和/或组态之间的关系。
再者，在此处使用空间上相对的词汇，譬如「之下」、「下方」、「低于」、「之上」、「上方」及与其相似者，可能是为了方便说明图中所绘示的一组件或特征相对于另一或多个组件或特征之间的关系。这些空间上相对的词汇其本意除了图中所绘示的方位之外，还涵盖了装置在使用或操作中所处的多种不同方位。可能将所述设备放置于其他方位(如，旋转90度或处于其他方位)，而这些空间上相对的描述词汇就应该做相应的解释。
虽然用以界定本申请较广范围的数值范围与参数皆是约略的数值，此处已尽可能精确地呈现具体实施例中的相关数值。然而，任何数值本质上不可避免地含有因个别测试方法所致的标准偏差。在此处，「约」通常系指实际数值在一特定数值或范围的正负10％、5％、1％或0.5％之内。或者是，「约」 一词代表实际数值落在平均值的可接受标准误差之内，视本申请所属技术领域中具有通常知识者的考虑而定。当可理解，除了实验例之外，或除非另有明确的说明，此处所用的所有范围、数量、数值与百分比(例如用以描述材料用量、时间长短、温度、操作条件、数量比例及其他相似者)均经过「约」的修饰。因此，除非另有相反的说明，本说明书与附随申请专利范围所揭示的数值参数皆为约略的数值，且可视需求而更动。至少应将这些数值参数理解为所指出的有效位数与套用一般进位法所得到的数值。在此处，将数值范围表示成由一端点至另一端点或介于二端点之间；除非另有说明，此处所述的数值范围皆包括端点。
在对晶圆进行薄膜沉积工艺时，会将晶圆放置在托盘上，一并传输至反应腔室中，以等离子体加工装置为例，其通过对晶圆进行等离子体轰击来完成薄膜沉积。然而，托盘并非一次性耗材，经过反复地在高温环境下烘烤、承载晶圆移动以及承受等离子体轰击后，托盘容易出现破损及碎盘的可能。目前没有检测装置检测托盘的状态，以能够在托盘破损或破碎后，及时通知系统停止运作，这可能造成系统内其他配件被溅射镀膜，或着，机械手臂在取出晶圆时碰撞到破碎的托盘等情形，从而造成不可逆的损害。
针对上述问题，本公开提供一种半导体加工装置，其能够实时检测工作件(如托盘)是否有破损的情况发生。另外，本公开提供的半导体加工装置，还可以检测多根支柱上是否放置有工作件(如托盘)，以及是否被正确地放置，从而避免在没有放置工作件(如托盘)或者工作件(如托盘)倾斜的情况下，系统就开始执行工艺的操作。
图1为依据本公开一实施例提供的半导体加工装置1的剖视图。请参阅图1，半导体加工装置1可以是一种用于对加工件(如晶圆)进行诸如薄膜沉积、刻蚀等的半导体工艺的装置，本实施例是以半导体加工装置1是一种磁控溅射装置为例，对半导体加工装置1的结构进行详细说明。
具体的，半导体加工装置1包括腔室10、置于该腔室10中的基座11、多根支柱(例如图1示出的三根支柱13、14和15)、磁控管16、靶材17、隔热环18、盖环19以及检测装置20。其中，三根支柱13、14和15沿基座11的圆周方向间隔设置在基座11上，用于共同支撑工作件12。在本实施例中，工作件12是用于承载加工件(如晶圆)的托盘。另外，基座11可以具有加热装置(图中未示出)，用于对工作件12进行加热。
当三根支柱13、14和15与基底11均采用导电性材料制成时，三根支柱13、14和15可分别通过三个连接件13'、14'和15'与基座11连接，三个连接件13'、14'和15'用于分别将三根支柱13、14和15固定在基座11上，且使三者均与基座11电绝缘。在一实施例中，三个连接件13'、14'和15'所采用的材料至少包括绝缘材料。
靶材17设置在腔室10的顶部，且位于基座11的上方；磁控管16设置在靶材17的上方，靶材17和磁控管16用于实现对工作件12上的加工件(如晶圆)进行薄膜沉积工艺，例如，半导体加工装置1采用物理气相沉积的方式对加工件(如晶圆)进行薄膜沉积，在进行薄膜沉积工艺时，向腔室10内充入工艺气体，并利用半导体加工装置1的激励电源向靶材17施加负电压，以激发工艺气体形成等离子体，开始对靶材17进行轰击以在工作件(如托盘)12上的工作件进行加工。
基座11是可升降的，且能够上升至工艺位置进行工艺，或者下降至装卸位置进行工作件12的取放操作。盖环19在基座11自工艺位置下降时，由隔热环18承载。当基座11上升至工艺位置时，基座11顶起盖环19，以使其与隔热环18分离，此时盖环19利用自身重力压住工作件12的边缘区域。
检测装置20可以与三根支柱13、14、15中的至少两根耦接，并通过从与之耦接的三根支柱13、14、15中选择任意两根支柱进行侦测，来判断托盘12的状态。在本公开中，「耦接」一词代表两物体间接地于物理性上接触， 「连接」一词代表两物体间直接地于物理性上接触。另方面，「电性连接」一词代表两物体间具有电性通路，使得功率可于两物体间传递。在图1的实施例中，检测装置20通过两根支柱13、15内的接线耦接至支柱13、15作为范例说明。关于支柱13、15内的接线的配置方式以及连接至检测装置20的连接方式将于后续段落中说明。
本技术领域具有通常知识者应能理解半导体加工装置1还包括其他用于对加工件(如晶圆)进行加工的必要组件，然而为求图标简洁，图1仅描绘与本公开精神相关的组件。
当对加工件(如晶圆)进行加工时，机械手臂将工作件(如托盘)12通过腔室10上的传片口传入腔室10中，并将工作件(如托盘)12放置于支柱13、14和15上，此时工作件(如托盘)12与支柱13、14和15均相互接触；接着，基座11连同支柱13、14和15以及工作件(如托盘)12同时上升，即，朝靠近磁控管16与靶材17的方向移动，在上升过程中，工作件(如托盘)12托起盖环19，使之与隔热环18分离；当基座11上升至工艺位置之后，可以开始对工作件(如托盘)12上的工作件进行加工。
而且，由于检测装置20通过支柱13、15内的接线耦接至支柱13、15，而且工作件(如托盘)12在被机械手臂放置于三根支柱13、14和15上之后，始终保持与三根支柱13、14和15相接触，这使得检测装置20通过支柱13、15始终与工作件(如托盘)12保持电性连接，从而不论是工作件(如托盘)12被放置在支柱13、14和15上时、工作件(如托盘)12承载加工件(如晶圆)上升时、或对加工件(如晶圆)进行加工时，检测装置20都可以对工作件(如托盘)12的状态进行检测。
图2为依据本公开一实施例提供的支柱13、14和15立于基座11之上的俯视图。请参阅图2，在本实施例中，基座11与工作件(如托盘)12的形状大致类似，三根支柱13、14和15相对于基座11的中心对称分布在以基座 11的中心为圆心的圆周上，并且工作件(如托盘)12在支柱上的标准位置应满足：当机械手臂将工作件(如托盘)12放置于支柱上时，工作件(如托盘)12的中心与基座11的中心对中，以保证三根支柱13、14、15能够稳定地支撑工作件(如托盘)12。
需注意的是，在本实施例中，支柱为三根，然而，在实际应用中，支柱的数量根据具体需要还可以设定为四根、五根或者六根以上。另外，基座与托盘的形状，以及支柱的分布方式可以自由设定，只要能达到稳定支撑工作件(如托盘)12的效果，皆应隶属于本公开的范围。
图3是依据本公开一实施例提供的检测装置20的示意图。如图3所示，检测装置20包括侦测电路21及处理电路22。其中，侦测电路21连接于两根支柱13、15之间，用于侦测两根支柱13、15之间的电性特征。具体的，侦测电路21包括第一侦测端T1和第二侦测端T2，其中，第一侦测端T1通过接线L1耦接至支柱13，第二侦测端T2通过接线L2耦接至支柱15。处理电路22耦接至侦测电路21，用于依据侦测电路21所侦测的电性特征判断工作件(如托盘)12的状态。
图4A至4D是依据本公开一实施例提供的检测装置20检测工作件(如托盘)12的示意图。如图4A所示，侦测电路21连接至两根支柱13、15，当机械手臂将工作件(如托盘)12放置于三根支柱13、14、15之上时，侦测电路21通过两根支柱13、15与工作件(如托盘)12电性连接，当工作件(如托盘)12是完整的，且正常地放置在三根支柱上时，两根支柱13、15之间通过工作件(如托盘)12形成电性通路4；如图4A至图4D所示，当工作件(如托盘)12发生破损、倾斜或者支柱上没有工作件如托盘)12时，两根支柱13、15之间的电性通路4不存在，基于此，通过利用侦测电路21实时检测两根支柱13、15之间的电性特征，可以判断出工作件(如托盘)12的状态是否正常，即，若存在电性通路4，则可以确认工作件(如托盘)12是完整的，且正常的放置在 三根支柱上；若不存在电性通路4，则可以确认工作件(如托盘)12可能发生了破损、倾斜或者支柱上没有工作件如托盘)12。所述电性特征可以是电阻或电流。
详细来说，侦测电路21可以检测两根支柱13、15之间的电阻值，处理电路22依据侦测电路21检测到的电阻值的大小判断工作件(如托盘)12的状态。一般而言，工作件(如托盘)12的材料为碳化硅，其体积电阻率与温度的对应关系示于表一中。
表一，工作件(如托盘)12的体积电阻率与温度的对应关系表。
温度 体积电阻率(Ω·cm)
20℃ 108
300℃ 104
500℃ 103
从上述表一可知，碳化硅在温度为500℃时的体积电阻率为103Ω·cm，而工作件(如托盘)12于高温烘烤下的温度接近500℃，在该温度条件下，两根支柱13、15之间的电阻值在千欧姆量级，藉此，当侦测电路21侦测到的电阻值并非千欧姆量级时，处理电路22可判断工作件(如托盘)12的状态为异常。然而，在实际应用中，本公开并不限制工作件(如托盘)12的材料，例如还可以为诸如金属材料钼或钢材等的其他任意材料制造工作件(如托盘)12，工作件(如托盘)12的材料不同，体积电阻率也不同，两根支柱13、15之间的电阻值也相应的不同，从而处理电路22判断工作件(如托盘)12的状态的条件也应适应性地进行调整。
例如，参考图4B，当工作件(如托盘)12破碎时，由于通过工作件(如托盘)12所形成的导电路径断裂导致了电性通路4消失不存在，此时侦测电路21所侦测到的电阻值将会远大于千欧姆量级，处理电路22依据侦测电路21所侦测到的电阻值判断工作件(如托盘)12的状态为异常。
又如，参考图4C，当工作件(如托盘)12虽未破碎但未正确地放置在三根支柱13、14、15上时，例如倾斜放置，也会导致两根支柱13、15之间的电性通路4不存在，此时侦测电路21所侦测到的电阻值会远大于千欧姆量级，处理电路22依据侦测电路21所侦测到的电阻值判断工作件(如托盘)12的状态异常。
再如，参考图4D，当机械手臂尚未将工作件(如托盘)12自传片口传入或由于机械手臂故障等原因，使得工作件(如托盘)12并未放置在三根支柱13、14和15上时，由于缺少工作件(如托盘)12形成导电路径，两根支柱13、15之间的电性通路4不存在，侦测电路21所侦测到的电阻值同样会远大于千欧姆量级，处理电路22依据侦测电路21所侦测到的电阻值判断工作件(如托盘)12的状态异常。
总的来说，处理电路22判断工作件(如托盘)12为异常的状态可包括工作件(如托盘)12破碎、倾斜或并未放置。然而，此并非本公开的一限制，只要两根支柱13、15之间的电性通路4不存在，处理电路21都会判断工作件(如托盘)12的状态异常。
在其他实施例中，侦测电路21也可以不直接两根支柱13、15之间的电阻，变化地，侦测电路21可以侦两根支柱13、15之间的电流大小，处理电路22依据侦测电路21所侦测的电流大小来判断工作件(如托盘)12的状态。详细来说，侦测电路21通过接线L1或接线L2中的一接线输出电流至工作件(如托盘)12，并通过接线L1或接线L2中的另一接线自工作件(如托盘)12接收电流，处理电路22依据侦测电路21是否能够接收到电流来判断工作件(如托盘)12的状态。当托盘12完整未破碎，且正常的放置在三根支柱上时，两根支柱13、15之间通过工作件(如托盘)12形成电性通路4，此时，侦测电路21能够接收到来自工作件(如托盘)12的电流，处理电路22据此判断工作件(如托盘)12的状态为正常；当工作件(如托盘)12状态如图4B、4C、4D所 示时，由于电性通路4不存在，导致侦测电路21无法接收到来自工作件(如托盘)12的电流，处理电路22据此判断工作件(如托盘)12的状态为异常。
参考图5A，当处理电路22判断工作件(如托盘)12的状态为异常后，处理电路22可以直接发出终止指令，半导体加工装置1根据该终止指令停止运作，待半导体加工装置1的用户排除异常状况，如替换破碎的工作件(如托盘)12或将工作件(如托盘)12正确的放置于三根支柱13、14、15之上后再重新启动半导体加工装置1，如此可避免半导体加工装置1在工作件(如托盘)12的状态为异常时仍然继续执行加工，造成半导体加工装置1内的其它配件有不可逆的损害。
然而，本公开并不限制处理电路22采用主动方式终止半导体加工装置1的运作。参考图5B，当处理电路22判断工作件(如托盘)12的状态为异常后，处理电路22可以将工作件(如托盘)12异常的状态显示于半导体加工装置1的外部显示设备50来通知半导体加工装置1的用户，达到警示作用。显而易见地，处理电路22还可以通过其他被动方式，例如以高频声音或闪烁光线等方式达到警示效果来通知使用者工作件(如托盘)12的异常状态。本公开并不限制处理电路22通知工作件(如托盘)12的异常状态的方式。
在先前的实施例中，以侦测电路21通过两根支柱13、15内的接线耦接至两根支柱13、15，以检测工作件(如托盘)12的状态作为范例说明，然而，本技术领域具有通常知识者应能轻易理解，侦测电路21耦接至其他支柱的组合同样可应用上述实施例中检测工作件(如托盘)12的状态的技术手段。参考图6A、6B及6C，在图6A中，侦测电路21的第一侦测端T1通过支柱13内的接线耦接至支柱13而第二侦测端T2通过支柱15内的接线耦接至支柱15；在图6B中，侦测电路21的第一侦测端T1通过支柱13内的接线耦接至支柱13而第二侦测端T2通过支柱14内的接线耦接至支柱14；在图6C中，侦测电路21的第一侦测端T1通过支柱14内的接线耦接至支柱14而第二侦 测端T2通过支柱15内的接线耦接至支柱15。在图6A、6B、6C的实施例中，侦测电路21的第一侦测端T1与第二侦测端T2皆分别耦接至支柱内远离基座11的一端，以直接或间接方式碰触工作件(如托盘)12以检测放置于支柱之间的工作件(如托盘)12的电性特征。
在本公开中，支柱内的接线以图7A或图7B实施例所示方式连接至侦测电路21的第一侦测端T1与第二侦测端T2。在图7A与图7B中，均以侦测电路21通过两根支柱13、14内的接线耦接至两根支柱13、14作为范例说明。需注意的是，在本公开的某些实施例中，支柱内的接线与所对应的支柱为一体成形，然而，在其他实施例中，支柱内的接线与所对应的支柱为分开制造后再将接线埋于支柱内。本公开并不限制接线与支柱的形成方式。
参考图7A，埋于支柱13内的接线L1的一端连接至支柱13内远离基座11的一端，以直接或间接方式碰触工作件(如托盘)12，接线L1的另一端自位于基座11上表面的孔洞的一端71穿入，并从该孔洞的位于基座11下表面的另一端72传出，并连接至第一侦测端T1；相似地，埋于支柱14内的接线L2的一端连接至支柱14内远离基座11的一端，以直接或间接方式碰触工作件(如托盘)12，接线L2的另一端自位于基座11上表面的孔洞的一端73穿入，并从该孔洞的位于基座11下表面的另一端74传出，并连接至第二侦测端T2。通过本实施例所揭露的方式连接侦测电路21与支柱，接线被隐藏于基座11内，避免接线暴露于腔室10内，进而造成接线在加工件(如晶圆)的加工过程中受到高温环境影响而受损，导致侦测电路21无法顺利连接至支柱。
参考图7B，埋于支柱13内的接线L1的一端连接至支柱13内远离基座11的一端，以直接或间接方式碰触工作件(如托盘)12，接线L1的另一端穿出连接件13'上的孔洞75连接至第一侦测端T1；相似地，埋于支柱14内的接线L2的一端连接至支柱14内远离基座11的一端，以直接或间接方式碰触工作件(如托盘)12，接线L2的另一端穿出连接件14'上的孔洞76接至第二侦 测端T2。在图7B的实施例中，可以以焊锡的方式将接线L1与L2分别固定在孔洞75与76中。通过本实施例所揭露的方式连接侦测电路21与支柱，接线具有较弹性的设计空间，可通过在连接件13’及14’上的任意位置设置孔洞75与76，来实现将侦测电路21连接至所对应的支柱13及14。
如前所述，埋于支柱内的接线的一端以直接或间接方式碰触工作件(如托盘)12。图8A至8F分别描绘埋于支柱内的接线碰触工作件(如托盘)12的不同实施例，并且在图8A至8F的实施例中以支柱13作范例说明。参考图8A，在图8A的实施例中，支柱13可导电。可选的，支柱13整体为导电材料制成。埋于支柱13内的接线L1的一端直接连接至支柱13上端的端点81，藉此，侦测电路21通过接线L1与支柱13间接地与工作件(如托盘)12接触来检测电性特征。
参考图8B，在图8B的实施例中，支柱13大部分无法导电，仅上部与工作件(如托盘)12接触的表面或部分表面可导电。可选的，支柱13大部分由绝缘材料制成，仅上部与工作件(如托盘)12接触的表面或部分表面由导电材料制成。在图8B中以虚线表示由导电材料制成的表面。埋于支柱13内的接线L1的一端直接连接至支柱13以导电材料所组成的上部的端点82，藉此，侦测电路21通过接线L1与支柱13间接地与工作件(如托盘)12接触来检测电性特征。
参考图8C，在图8C的实施例中，支柱13中设置有孔洞，该孔洞的一端83位于支柱13的上部与工作件(如托盘)12接触的表面上，埋于支柱13内的接线L1的一端自该孔洞的一端83露出，以能够与工作件(如托盘)12直接接触，藉此，侦测电路21通过接线L1直接地与工作件(如托盘)12接触来检测电性特征。在图8C的实施例中，不限制支柱13的材料，其可以是导电材料制成，也可以是绝缘材料制成，还可以是其他任意材料。
参考图8D，在图8D的实施例中，支柱13中设置有孔洞，该孔洞的一 端84位于支柱13的上表面上，并且在该上表面上覆盖有导体85，导体85用于与两条接触，埋于支柱13内的接线L1的一端自孔洞的一端84直接连接至导体85，藉此，侦测电路21通过接线L1与导体85间接地与工作件(如托盘)12接触来检测电性特征。
在图8A至图8D的实施例中，接线与支柱的连接可以是焊接，也可以是压接、法兰连接等保证电性连接的方式，本公开并不以此为限。
参考图8E，在图8E的实施例中，支柱13内部设置有温度侦测组件86。可选的，温度侦测组件86为热电耦。温度侦测组件86以两条接线La与Lb连接至温度侦测装置(图未示)以侦测工作件(如托盘)12的温度，在本实施例中，采用接壳式热电耦来侦测工作件(如托盘)12的温度，并且，温度侦测组件86自支柱13的上表面露出，以能够直接接触工作件(如托盘)12，由于温度侦测组件86本身可导电，因此，温度侦测组件86的两条接线La与Lb的其中之一可以作为接线L1连接至侦测电路21，用以检测电性特征。
参考图8F，在图8F的实施例中，支柱13内部包括有温度侦测组件87。可选的，温度侦测组件87为热电耦。温度侦测组件87以两条接线La'与Lb'连接至温度侦测装置(图未示)用以侦测工作件(如托盘)12的温度，在本实施例中，采用非接壳式热电耦来侦测工作件(如托盘)12的温度，并且，温度侦测组件87位于支柱13的上表面以下，并未露出，在这种情况下，可另外以一条接线作为前述的接线L1，该接线的一端直接或间接与工作件(如托盘)12接触，另一端连接至侦测电路21。在本实施例中，可以结合图8A至图8D所示之接线L1直接或间接连接工作件(如托盘)12的实施例，本技术领域具有通常知识者应能轻易理解图8F与图8A至图8D的结合方式，详细说明在此省略以省篇幅。
图9是依据本公开另一实施例提供的半导体加工装置9的剖视图。类似半导体加工装置1，半导体加工装置9可以是一种用于对加工件(如晶圆)进行 诸如薄膜沉积、刻蚀等的半导体工艺的装置，本实施例是以半导体加工装置9是一种磁控溅射装置为例，对半导体加工装置9的结构进行详细说明。
具体的，半导体加工装置9包括腔室90、置于该腔室90之中的基座91、多根支柱(例如图9示出的三根支柱93、94和95)、三个连接件93'、94'和95'、磁控管96、靶材97、隔热环98、盖环99以及检测装置30。腔室90、基座91、三根支柱93、94和95、三个连接件93'、94'和95'、磁控管96、靶材97、隔热环98以及盖环99与图1的实施例中所描述的对应组件相同，详细说明在此省略以省篇幅。半导体加工装置9与半导体加工装置1的差异在于：检测装置30通过三根支柱93、94和95内的接线耦接至三根支柱93、94和95，以判断工作件92的状态。在本实施例中，工作件92是用于承载加工件(如晶圆)的托盘。
图10是依据本公开一实施例提供的检测装置30的示意图。检测装置30包括侦测电路31及处理电路32。其中，侦测电路31通过三组接线组L3、L4和L5分别耦接至三根支柱93、94和95，每一接线组包括两条接线，例如，接线组L3包括两条接线L3a与L3b，接线组L4包括两条接线L4a与L4b，接线组L5包括两条接线L5a与L5b。侦测电路31用于侦测支柱93与支柱94之间、支柱93与支柱95之间以及支柱94与支柱95之间的电性特征。具体的，侦测电路31包括第一侦测端T1'、第二侦测端T2'以及第三侦测端T3'，其中，第一侦测端T1'通过接线组L3耦接至支柱93、第二侦测端T2'通过接线组L4耦接至支柱94而第三侦测端T3'通过接线组L5耦接至支柱95。处理电路32耦接至侦测电路31，处理电路32用于依据侦测电路31所侦测的电性特征判断工作件(如托盘)92的状态。
图11A至11D是依据本公开一实施例提供的检测装置30检测工作件(如托盘)92的示意图。参考图11A，侦测电路31通过三组接线组L3、L4和L5分别连接至三根支柱93、94和95，当机械手臂将工作件(如托盘)92放置于 三根支柱93、94和95之上时，侦测电路31通过三根支柱93、94和95与工作件(如托盘)92电性连接，当工作件(如托盘)92完整未破碎，且正常的放置在三根支柱上时，支柱93与支柱95之间通过托盘92形成电性通路5，支柱93与支柱94之间通过工作件(如托盘)92形成电性通路6，支柱94与支柱95之间通过工作件(如托盘)92形成电性通路7。当工作件(如托盘)12发生破损、倾斜或者支柱上没有工作件如托盘)12时，电性通路5、6和/或7不存在，基于此，通过利用侦测电路31实时检测三根支柱中任意两根支柱之间的电性特征，可以判断出工作件(如托盘)12的状态是否正常，即，若电性通路5、6和7均存在，则可以确认工作件(如托盘)12是完整的，且正常的放置在三根支柱上；若有其中一个电性通路不存在，则可以确认工作件(如托盘)12可能发生了破损、倾斜或者支柱上没有工作件如托盘)12。基于此，侦测电路31实时检测支柱93与支柱95之间的电性特征、支柱93与支柱94之间的电性特征以及支柱94与支柱95之间的电性特征，处理电路32依据侦测电路31所侦测的电性特征判断工作件(如托盘)92的状态。所述电性特征可以是电阻或电流。
详细来说，侦测电路31通过接线L3a与L5a检测支柱93、95之间的电阻值；侦测电路31通过接线L3b与L4a检测支柱93、94之间的电阻值；侦测电路31通过接线L4b与L5b检测支柱94、95之间的电阻值。处理电路32依据侦测电路31所检测的电阻值判断工作件(如托盘)92的状态。
如同图4A的实施例所描述，当工作件(如托盘)92的材料为碳化硅时，若侦测电路21侦测到支柱93与支柱95之间、支柱93与支柱94之间以及支柱94与支柱95之间，只要有其中一对支柱之间的电阻值并非千欧姆量级，处理电路22可判断工作件(如托盘)92的状态为异常。
参考图11B，当工作件(如托盘)92破碎时，虽然支柱93与支柱94之间的电性通路6仍存在，然而支柱93与支柱95之间的电性通路5以及支柱94 与支柱95之间的电性通路7因为工作件(如托盘)92破碎的缘故不存在，此时侦测电路31侦测到支柱93与支柱95之间的电阻值以及支柱94与支柱95之间的电阻值将会远大于千欧姆量级，处理电路32依据侦测电路31所侦测到的电阻值判断工作件(如托盘)92的状态为异常。
参考图11C，当工作件(如托盘)92并未正确地放置在三根支柱93、94、95上时，例如倾斜放置，导致电性通路5、6和7皆不存在，侦测电路31侦测到支柱93与支柱95之间的电阻值、支柱93与支柱94之间的电阻值以及支柱94与支柱95之间的电阻值皆会远大于千欧姆量级，处理电路32依据侦测电路31所侦测到的电阻值判断工作件(如托盘)92的状态异常。
参考图11D，当工作件(如托盘)92并未放置在支柱93、94、95上时，导致电性通路5、6和7皆不存在，侦测电路31侦测到支柱93与支柱95之间的电阻值、支柱93与支柱94之间的电阻值以及支柱94与支柱95之间的电阻值同样皆会远大于千欧姆量级，处理电路32依据侦测电路31所侦测到的电阻值判断工作件(如托盘)92的状态异常。
总的来说，处理电路32判断工作件(如托盘)92为异常的状态可包括工作件(如托盘)92破碎、倾斜或并未放置。然而，此并非本公开的一限制，若电性通路5、6和7中的任一不存在时，处理电路31都会判断工作件(如托盘)92的状态异常。
在其他实施例中，侦测电路31可以不直接测量支柱93与支柱95之间的电阻值、支柱93与支柱94之间的电阻值以及支柱94与支柱95之间的电阻值，可变化地，侦测电路31可以侦测支柱93与支柱95之间、支柱93与支柱94之间以及支柱94与支柱95之间的电流大小，处理电路32依据侦测电路31所侦测的电流大小来判断工作件(如托盘)92的状态。
详细来说，侦测电路31通过接线L3a或接线L5a中的一接线输出电流至工作件(如托盘)92，并通过接线L3a或接线L5a中的另一接线自工作件(如 托盘)92接收电流，处理电路32依据侦测电路31是否能够接收到电流来判断工作件(如托盘)92的状态。当托盘12完整未破碎，且被正常的放置在三根支柱上时，支柱93与支柱95之间通过工作件(如托盘)12形成电性通路5，此时，侦测电路31能够接收到来自工作件(如托盘)12的电流，处理电路32据此判断工作件(如托盘)12的状态为正常；当工作件(如托盘)92状态如图11B、11C、11D所示时，由于电性通路5不存在，导致侦测电路31无法自工作件(如托盘)92接收电流，处理电路32据此判断工作件(如托盘)92的状态为异常。
相似地，侦测电路31通过接线L3b或接线L4a中的一接线输出电流至工作件(如托盘)92，并通过接线L3b或接线L4a中的另一接线自工作件(如托盘)92接收电流，处理电路32依据侦测电路31是否能够接收到电流来判断工作件(如托盘)92的状态。当托盘12完整未破碎，且正常的放置在三根支柱上时，支柱93与支柱94之间通过工作件(如托盘)12形成电性通路6，此时，侦测电路31能够接收到来自工作件(如托盘)12的电流，处理电路32据此判断工作件(如托盘)12的状态为正常；当工作件(如托盘)92状态如图11B、11C、11D所示时，由于电性通路6不存在，导致侦测电路31无法自工作件(如托盘)92接收电流，处理电路32据此判断工作件(如托盘)92的状态为异常。
侦测电路31自接线L4b或接线L5b中的一接线输出电流至工作件(如托盘)92，并通过接线L4b或接线L5b中的另一接线自工作件(如托盘)92接收电流，处理电路32依据侦测电路31是否能够接收到电流来判断工作件(如托盘)92的状态。当托盘12完整未破碎，且正常的放置在三根支柱上时，支柱94与支柱95之间通过工作件(如托盘)12形成电性通路7，此时，侦测电路31能够接收到来自工作件(如托盘)12的电流，处理电路32据此判断工作件(如托盘)12的状态为正常；当工作件(如托盘)92状态如图11B、11C、11D所示时，由于电性通路7不存在，导致侦测电路31无法自工作件(如托盘)92接收 电流，处理电路32据此判断工作件(如托盘)92的状态为异常。
上述处理电路32可以依据图5A以及图5B所示的处理电路22所采用的方式通知工作件(如托盘)92的状态异常，例如，将工作件(如托盘)异常的状态显示于半导体加工装置的外部显示设备来通知半导体加工装置的用户，达到警示作用。详细说明在此省略以省篇幅。
另外，三根支柱93、94和95与侦测电路31的接线方式，可以依据图7A、7B以及图8A至8F所示的三根支柱13、14和15与侦测电路21的接线方式进行连接，详细说明在此省略以省篇幅。
本领域具有通常知识者在阅读完上述实施例后应能轻易理解本公开并不限定半导体加工装置内支柱的数量、样式以及与侦测电路的连接方式，仅要能通过支柱与工作件(如托盘)的接触来侦测支柱与支柱之间的电性特征，皆能有效的判断工作件(如托盘)的状态是否异常，进而避免因工作件(如托盘)状态异常造成半导体加工装置内的其它配件有不可逆的损害。
在上述的实施例中，半导体加工装置1或9中的支柱可以是基座11或91上的顶针，具有伸缩机制，可以控制支柱于基座上升降来支撑工作件(如托盘)。然而，本公开并不以此为限，在其他实施例中支柱可以是顶针之外额外设置在基座用以支撑工作件(如托盘)的组件。参考图12，图12中所示的基座51、三根支柱53、54和55以及工作件(如托盘)52类似于半导体加工装置1与9中的对应组件，差异在于：三根支柱53、54和55作为基座51上的顶针以支撑工作件(如托盘)52，然而，三根支柱53、54和55中未设置连接于检测装置的接线，相对应地，基座51上另外设置有三个支撑件56、57和58，三个支撑件56、57和58中分别设置有三组接线组L6、L7和L8，以连接检测装置，如此一来，检测装置可通过三组接线组L6、L7和L8来检测三个支撑件56、57、58之间的电性特征。三个支撑件56、57和58与基座51之间可具有类似弹簧的弹性结构，以缓冲三个支撑件56、57和58所承受的压力。 然而，此并非本公开的一限制，三个支撑件56、57和58可以如同前述实施例中的三根支柱13、14和15或三根支柱93、94和95通过连接件连接至基座51。
关于三个支撑件56、57和58内的三组接线组L6、L7和L8的连接方式可参考图7A、7B以及图8A至8F的实施例，本领域具有通常知识者在阅读完上述实施例后，应能轻易理解如何通过检测装置以及三个支撑件56、57和58来检测电性特征，并且判断工作件(如托盘)52的状态，详细说明在此省略以省篇幅。
简单归纳本公开，通过支柱内的接线直接或间接地连接工作件(如托盘)可以实时的检测支柱之间的电性特征，当电性特征与默认状况差距过大时，本公开所公开的检测装置可据此判断工作件(如托盘)状态为异常，进而主动停止系统运作或被动地告知用户，避免系统内的配件造成不可逆的损害。

Claims (11)

  1. 一种半导体加工装置，包括腔室、置于所述腔室内的多根支柱以及用于支撑所述多根支柱的基座，所述多根支柱用于承载工作件，其特征在于，所述半导体加工装置还包括检测装置，所述检测装置耦接至所述多根支柱中的至少两根支柱，用于通过从与所述检测装置耦接的所述至少两根支柱中选择任意两根支柱进行侦测，来判断所述工作件的状态。
  2. 如权利要求1所述的半导体加工装置，其特征在于，所述检测装置包括:
    侦测电路，与所述至少两根支柱连接，所述侦测电路用于侦测与之连接的所述至少两根支柱中的任意两根支柱之间的电性特征；及
    处理电路，耦接至所述侦测电路，所述处理电路用于依据所述电性特征判断所述工作件的所述状态。
  3. 如权利要求2所述的半导体加工装置，其特征在于，所述支柱为三根，分别为第一支柱、第二支柱及第三支柱，所述侦测电路与所述第一支柱、所述第二支柱及所述第三支柱连接，并侦测所述第一支柱与所述第二支柱之间、所述第一支柱与所述第三支柱之间及所述第二支柱与所述第三支柱之间的所述电性特征。
  4. 如权利要求2或3所述的半导体加工装置，其特征在于，所述电性特征是与所述侦测电路连接的所述至少两根支柱中的任意两根支柱之间的电阻值。
  5. 如权利要求2或3所述的半导体加工装置，其特征在于，所述侦测电路自所述任意两根支柱中的一个输出第一电流至所述工作件，并通过所述 任意两根支柱中的另一个自所述工作件接收第二电流，且所述电性特征是所述任意两根支柱中的另一个接收到的第二电流的电流值。
  6. 如权利要求2所述的半导体加工装置，其特征在于，所述侦测电路包括：
    至少两个侦测端，所述至少两个侦测端中的每一个侦测端分别耦接至所述至少两根支柱中的每个支柱远离所述基座的一端。
  7. 如权利要求6所述的半导体加工装置，其特征在于，所述侦测端与对应的所述支柱之间的连接线通过所述基座上的一孔洞连接至所述侦测电路。
  8. 如权利要求1或6所述的半导体加工装置，其特征在于，还包括:
    连接件，包括绝缘材料，用于将所述支柱连接于所述基座上，且使所述基座与所述支柱之间电绝缘。
  9. 如权利要求8所述的半导体加工装置，其特征在于，所述侦测端与对应的所述支柱之间的连接线通过所述连接件上的一孔洞连接至所述侦测电路。
  10. 一种半导体加工装置，包括腔室以及置于所述腔室内的多根支柱，所述多根支柱用于承载工作件，其特征在于，所述半导体加工装置还包括检测装置，所述检测装置包括:
    侦测电路，与所述多根支柱中的至少两根支柱连接，所述侦测电路用于侦测与所述侦测电路连接的所述至少两根支柱中任意两根支柱之间的电性特征；及
    处理电路，耦接至所述侦测电路，所述处理电路用于将所述侦测电路侦 测到的所述电性特征通知所述半导体加工装置的用户。
  11. 一种磁控溅射装置，其特征在于，包括:
    腔室；
    多根支柱，置于所述腔室内，用于支撑工作件；
    基座，置于所述腔室内，用于支撑所述多根支柱；所述基座带动所述多根支柱进行升降运动；
    靶材以及磁控管，置于所述腔室内，其中所述靶材及所述磁控管用于对所述工作件进行薄膜沉积；及
    检测装置，所述检测装置耦接至所述多根支柱中的至少两根支柱，用于通过从与所述检测装置耦接的所述至少两根支柱中选择任意两根支柱进行侦测，来判断所述工作件的状态。
PCT/CN2020/093859 2019-06-11 2020-06-02 半导体加工装置及磁控溅射装置 WO2020248868A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217024604A KR102636473B1 (ko) 2019-06-11 2020-06-02 반도체 가공 장치 및 마그네트론 스퍼터링 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910503297.6A CN112063979B (zh) 2019-06-11 2019-06-11 半导体加工装置及相关磁控溅射装置
CN201910503297.6 2019-06-11

Publications (1)

Publication Number Publication Date
WO2020248868A1 true WO2020248868A1 (zh) 2020-12-17

Family

ID=73658791

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/093859 WO2020248868A1 (zh) 2019-06-11 2020-06-02 半导体加工装置及磁控溅射装置

Country Status (4)

Country Link
KR (1) KR102636473B1 (zh)
CN (1) CN112063979B (zh)
TW (1) TW202113114A (zh)
WO (1) WO2020248868A1 (zh)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638003B2 (en) * 2006-01-12 2009-12-29 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
CN105702598A (zh) * 2016-04-06 2016-06-22 北京北方微电子基地设备工艺研究中心有限责任公司 判断晶片是否正常升起的方法及其装置
CN109811323A (zh) * 2019-01-23 2019-05-28 北京北方华创微电子装备有限公司 一种磁控溅射装置和托盘检测方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1112728A (ja) * 1997-06-20 1999-01-19 Nec Kyushu Ltd スパッタ装置
KR19990008828A (ko) * 1997-07-04 1999-02-05 문정환 공정챔버의 웨이퍼검출장치
TW515022B (en) * 2001-10-03 2002-12-21 Taiwan Semiconductor Mfg Device and method for detecting the balance position of wafer
US6723201B2 (en) * 2002-02-21 2004-04-20 Taiwan Semiconductor Manufacturing Co., Ltd. Microchip fabrication chamber wafer detection
KR20030092158A (ko) * 2002-05-27 2003-12-06 삼성전자주식회사 기판 상에 막을 형성하기 위한 장치
JP2005264226A (ja) * 2004-03-18 2005-09-29 Mitsui Eng & Shipbuild Co Ltd プラズマ処理装置
CN101677056A (zh) * 2008-09-17 2010-03-24 力晶半导体股份有限公司 承载装置及沉积机台的监测方法
KR101395243B1 (ko) * 2011-04-29 2014-05-15 세메스 주식회사 기판처리장치 및 방법
CN102945788B (zh) * 2011-08-16 2015-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置及具有其的半导体处理设备
KR101464315B1 (ko) * 2012-11-27 2014-11-21 에이피시스템 주식회사 스퍼터링 장치 및 스퍼터링 장치의 모니터링 방법
JP6190264B2 (ja) * 2013-12-13 2017-08-30 東芝メモリ株式会社 半導体製造装置
JP6308967B2 (ja) * 2015-03-27 2018-04-11 東京エレクトロン株式会社 熱処理装置、熱処理における異常検出方法及び読み取り可能なコンピュータ記憶媒体
JP6426057B2 (ja) * 2015-06-16 2018-11-21 株式会社Ｓｃｒｅｅｎホールディングス クラック検知方法、クラック検知装置および基板処理装置
CN106350780B (zh) * 2015-07-16 2018-12-11 北京北方华创微电子装备有限公司 反应腔室及半导体加工设备
KR101738986B1 (ko) * 2015-12-07 2017-05-24 주식회사 디엠에스 리프트 핀 어셈블리를 갖는 기판처리장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638003B2 (en) * 2006-01-12 2009-12-29 Asm Japan K.K. Semiconductor processing apparatus with lift pin structure
CN105702598A (zh) * 2016-04-06 2016-06-22 北京北方微电子基地设备工艺研究中心有限责任公司 判断晶片是否正常升起的方法及其装置
CN109811323A (zh) * 2019-01-23 2019-05-28 北京北方华创微电子装备有限公司 一种磁控溅射装置和托盘检测方法

Also Published As

Publication number Publication date
KR102636473B1 (ko) 2024-02-14
TW202113114A (zh) 2021-04-01
CN112063979B (zh) 2023-12-22
KR20210110688A (ko) 2021-09-08
CN112063979A (zh) 2020-12-11

Similar Documents

Publication Publication Date Title
TWI389187B (zh) 具有接地構件完整性指示器之電漿處理室及其使用方法
CN103098195B (zh) 用于利用升降销静电解除卡紧的极区
US10978323B2 (en) Substrate holder having integrated temperature measurement electrical devices
CN109216251B (zh) 静电吸盘、衬底处理装置以及制造半导体器件的方法
JP5294681B2 (ja) 基板処理装置及びその基板搬送方法
CN110085546B (zh) 用于薄基板搬运的静电载体
US20190304824A1 (en) Plasma processing apparatus and method of transferring workpiece
TW521371B (en) Semiconductor apparatus, method of and apparatus for mounting a semiconductor-device
WO2020248868A1 (zh) 半导体加工装置及磁控溅射装置
US20120049885A1 (en) Electronic device
US20200111648A1 (en) Plasma processing apparatus and method for measuring thickness of ring member
JP5485936B2 (ja) 温度校正装置及び温度校正方法
CN108780753B (zh) 基板处理装置、温度测定单元及半导体器件的制造方法
US10837991B2 (en) Electrostatic capacitance measuring device
JP4621111B2 (ja) デバイス試験機構、ハンドラおよびデバイスの試験方法
CN105702610A (zh) 晶片承载装置
JP4009009B2 (ja) 吸着状態判断方法
JP2010164411A (ja) 薄膜型ガスセンサ
CN112103163B (zh) 下电极装置及相关等离子体系统
US6843926B2 (en) In-situ measurement of wafer position on lower electrode
KR102675696B1 (ko) 플라스마 처리 장치의 이상 검지 방법 및 플라스마 처리 장치
JP7281885B2 (ja) 静電チャック装置およびその制御方法
CN104658844A (zh) 一种托盘支撑装置及等离子体加工设备
JP2000241787A (ja) 液晶表示装置の製造装置および製造方法
JP2013207051A (ja) 保持装置、保持システム、および電子デバイスの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20823001

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20217024604

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20823001

Country of ref document: EP

Kind code of ref document: A1