WO2020241367A1 - Electric current detection device - Google Patents

Electric current detection device Download PDF

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Publication number
WO2020241367A1
WO2020241367A1 PCT/JP2020/019720 JP2020019720W WO2020241367A1 WO 2020241367 A1 WO2020241367 A1 WO 2020241367A1 JP 2020019720 W JP2020019720 W JP 2020019720W WO 2020241367 A1 WO2020241367 A1 WO 2020241367A1
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Prior art keywords
magnetic
opening
current detection
phase
detection device
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PCT/JP2020/019720
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French (fr)
Japanese (ja)
Inventor
宣之 笹沼
加藤　剛
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日立オートモティブシステムズ株式会社
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Application filed by 日立オートモティブシステムズ株式会社 filed Critical 日立オートモティブシステムズ株式会社
Priority to DE112020002101.7T priority Critical patent/DE112020002101T5/en
Priority to JP2021522247A priority patent/JP7257510B2/en
Priority to CN202080037882.2A priority patent/CN113853522A/en
Publication of WO2020241367A1 publication Critical patent/WO2020241367A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/18—Screening arrangements against electric or magnetic fields, e.g. against earth's field
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only

Definitions

  • the present invention relates to a current detector.
  • Patent Document 1 discloses a current sensor including a conductive portion through which a current flows, a detection unit for detecting a magnetic field generated by the current flowing through the conductive portion, and a shield surrounding the conductive portion and the detection portion.
  • Patent Document 1 has a problem that the current detection accuracy is deteriorated due to the influence of the current flowing through the adjacent conductor.
  • the current detection device forms a first storage space for accommodating the first current detection element, the second current detection element, a part of the first conductor, and the first current detection element, and the first 1
  • a first shield that forms a first opening that connects the storage space and the outside, and a second storage space that is adjacent to the first shield and houses a part of the second conductor and the second current detection element.
  • the first shielding portion includes a second shielding portion that forms a second opening that connects the second storage space and the outside, and the first shielding portion has a portion near the end that forms the first opening.
  • the opening area of the first opening is formed to increase as it approaches the end, and the second shielding portion is formed so that the vicinity of the end forming the second opening approaches the end. It is formed so that the opening area of the opening is large.
  • the present invention it is possible to suppress the influence of the current flowing through the adjacent conductor and reduce the deterioration of the current detection accuracy.
  • FIG. 1 is a perspective view of the current detection device 100 according to the present embodiment.
  • the current detection device 100 is in the Z-axis direction among the three directions (X-axis, Y-axis, and Z-axis directions) orthogonal to the U-phase, V-phase, and W-phase conductors Bu, Bv, and Bw.
  • the value of the current flowing through is detected in a non-contact manner.
  • the current detection device 100 is a U-phase current detection device 100u, a V-phase current detection device 100v, and a W-phase current detection device 100w in three directions (X-axis, Y-axis, and Z-axis directions) orthogonal to each other. Of these, it is configured by installing in parallel in the X-axis direction.
  • the current detection device 100u detects the value of the current flowing through the U-phase conductor Bu in a non-contact manner.
  • the current detection device 100v detects the value of the current flowing through the V-phase conductor Bv in a non-contact manner.
  • the current detection device 100w detects the value of the current flowing through the W-phase conductor Bw in a non-contact manner.
  • a magnetic detection element 2u mounted on the substrate 1u is provided in the vicinity of the upper part of the U-phase conductor Bu in the drawing.
  • a predetermined length portion of the conductor Bu, the substrate 1u, and the magnetic detection element 2u are housed in a magnetic shielding portion 3u having a substantially U-shaped cross section. That is, the magnetic shielding portion 3u forms a storage space 4u that houses a part of the conductor Bu, the substrate 1u, and the magnetic detection element 2u, and forms an opening 5u that connects the storage space 4u and the outside.
  • the magnetic shielding portion 3u is formed so that the opening area of the opening 5u increases as the vicinity of the end 6u forming the opening 5u approaches the end 6u.
  • the configuration of the V-phase current detection device 100v and the configuration of the W-phase current detection device 100w are the same as the configuration of the U-phase current detection device 100u.
  • Conductors Bu, Bv, and Bw are current conductors that extend in the Z-axis direction and allow current to flow in the Z-axis direction.
  • the conductors Bu, Bv, and Bw are made of a conductive material through which an electric current flows.
  • the conductors Bu, Bv, and Bw generate a magnetic field around them according to the value at which the current flows.
  • the magnetic detection elements 2u, 2v, and 2w detect the magnetic field generated by the current flowing through the conductors Bu, Bv, and Bw.
  • the magnetic detection elements 2u, 2v, and 2w detect, for example, a magnetic field substantially parallel to the X-axis direction in FIG.
  • semiconductors such as Si and GaAs are used, and the detected magnetic field (magnetic field) is converted into a voltage, and the converted voltage is used for controlling the motor.
  • the magnetic shielding portions 3u, 3v, and 3w are made of silicon steel plate, and have a function of collecting magnetic flux by an electric current and a function of shielding a magnetic field from the outside.
  • it is composed of a magnetic material having a high saturation magnetic flux density such as Si-Fe and Ni-Fe.
  • the magnetic shielding portions 3u, 3v, and 3w have magnetic detection elements 2u, 2v, 2w, and a part of conductors Bu, Bv, and Bw arranged inside, and a magnetic field input from the outside to the magnetic detection elements 2u, 2v, and 2w. Shield to reduce the effects of disturbances.
  • FIG. 2 is a cross-sectional view of the current detection device 100 according to the present embodiment.
  • This cross-sectional view is a cross-sectional view of a plane parallel to the plane formed by the X-axis and Y-axis of FIG.
  • the same parts as those in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted.
  • the U-phase current detection device 100u, the V-phase current detection device 100v, and the W-phase current detection device 100w are parallel to the X-axis direction among the three orthogonal directions (X-axis, Y-axis, and Z-axis directions) shown in the drawing. Is installed.
  • the magnetic shielding portions 3u, 3v, and 3w have openings 5u, 5v, and 5w as the vicinity of the ends 6u, 6v, and 6w forming the openings 5u, 5v, and 5w approaches the ends 6u, 6v, and 6w. Is formed so that the opening area of is large.
  • the current detection device 100 detects the currents flowing through the conductors Bu, Bv, and Bw for the three phases of the U phase, the V phase, and the W phase, respectively.
  • the current detection device 100 is a so-called coreless current sensor including magnetic detection elements 2u, 2v, 2w and magnetic shielding portions 3u, 3v, 3w.
  • the coreless current sensor collects the magnetic field generated by the current energization of the conductors Bu, Bv, and Bw by the magnetic shielding portions 3u, 3v, and 3w to increase the magnetic flux density, and detects them by the magnetic detection elements 2u, 2v, and 2w. , Voltage output.
  • the coreless current sensor is smaller than the core type, the magnetic shielding effect of the magnetic shielding portions 3u, 3v, and 3w is weak, so that disturbances other than the magnetic field generated in the conductors Bu, Bv, and Bw to be detected are disturbed. There is a problem that detection error is likely to occur due to the influence of a magnetic field (crosstalk, etc.) and the current detection accuracy deteriorates.
  • FIGS. 3A and 3 (B) are diagrams showing a magnetic field from the outside due to a difference in the shape of the magnetic shielding portion 3.
  • FIG. 3 (A) shows a comparative example of the present embodiment
  • FIG. 3 (B) shows the present embodiment.
  • FIGS. 3A and 3B an example of the U-phase current detection device 100u will be described.
  • the same parts as those in FIGS. 1 and 2 are designated by the same reference numerals, and the description thereof will be omitted.
  • the magnetic shielding portion 3'u in the comparative example shown in FIG. 3A is formed in a substantially U shape, and the opening area thereof including the end portion forming the opening does not change.
  • the bent portion 30u in the present embodiment shown in FIG. 3B is formed so that the opening area of the opening increases as the vicinity of the end portion forming the opening approaches the end portion 6u. Has been done.
  • the bending angle ⁇ of the bent portion 30u is preferably 20 to 60 degrees.
  • the magnetic detection element 2u can reduce the influence of the magnetic field from the outside.
  • FIGS. 4 (A) and 4 (B) are diagrams showing the magnetic fields from the adjacent phases due to the difference in the shape of the magnetic shielding portion 3.
  • FIG. 4A shows a comparative example of the present embodiment
  • FIG. 4B shows the present embodiment.
  • the same parts as those in FIGS. 1 and 2 are designated by the same reference numerals, and the description thereof will be omitted.
  • the magnetic shielding portion 3'u in the comparative example shown in FIG. 4 (A) is formed in a substantially U shape, and the opening area thereof including the end portion forming the opening does not change. Focusing on the U phase and its adjacent V phase, the magnetic field B'vu from the V phase to the U phase is input to the magnetic shield 3'u in the -X axis direction due to the influence of the current flowing through the conductor Bv of the V phase. Will be done.
  • the magnetic field B'vu is input to the entire surface of the side surface of the magnetic shielding portion 3'u. That is, since the magnetic resistance is uniform, the magnetic flux from the adjacent phase flows almost uniformly. Therefore, in the comparative example, the magnetic detection element 2u is easily affected by an external magnetic field.
  • the opening area of the opening 5u increases as the vicinity of the end 6u forming the opening 5u approaches the end 6u.
  • Bent portions 30u and 30v are formed. Focusing on the U phase and its adjacent V phase, the magnetic field Bvu is input from the V phase to the U phase into the magnetic shielding portion 3u due to the influence of the current flowing through the conductor Bv of the V phase, but the magnetic field Bvu is the bent portion. Guided by 30u and 30v, it concentrates on the end 6u of the opening 5u of the magnetic shielding portion 3u.
  • the magnetic detection element 2u is less susceptible to the influence of the magnetic field from the adjacent phase.
  • the current detection device 100 is arranged near, for example, a three-phase conductor derived from an inverter that converts direct current into three-phase alternating current, and the current flowing through the U-phase, V-phase, and W-phase conductors Bu, Bv, and Bw. Detect values non-contact.
  • the current flowing through the conductors Bu, Bv, and Bw is supplied to the motor.
  • the detection error can be reduced by the current detection device 100 according to the present embodiment, the torque accuracy of the motor can be improved based on the detected current value. it can.
  • the magnetic shielding ability of the magnetic shielding portion 3 depends on the magnetic permeability, it is also possible to use a material having a low magnetic permeability as the magnetic shielding portion 3.
  • the strength of the disturbance magnetic field detected by the magnetic detection element 2 is increased by expanding the opening area at the end of the magnetic shielding portion 3 and inducing the disturbance magnetic field of the adjacent X-axis component in the Y-axis direction. It can be lowered and the detection error can be reduced. In other words, by enhancing the magnetic coupling with the adjacent phase at the end of the magnetic shielding portion 3, the inflow of magnetic flux from the adjacent phase at the installation position of the magnetic detection element 2 is reduced.
  • the current detection device 100 forms a first storage space 4u that houses the first current detection element 2u, the second current detection element 2v, a part of the first conductor Bu, and the first current detection element 2u.
  • the first shielding portion 3u is provided with a second shielding portion 3v that forms a second storage space 4v for accommodating 2v and forms a second opening 5v that connects the second storage space 4v and the outside.
  • the vicinity of the end 6u forming the 1 opening 5u is formed so that the opening area of the first opening 5u becomes larger as the vicinity of the end 6u approaches the end 6u, and the second shielding portion 3v is the end forming the second opening 5v. It is formed so that the opening area of the second opening 5v increases as the vicinity of the portion 6v approaches the end portion 6v. As a result, it is possible to suppress the influence of the current flowing through the adjacent conductor and reduce the deterioration of the current detection accuracy.
  • the present invention can be implemented by modifying the embodiment described above as follows.
  • (1) The magnetic shielding portion 3 bends linearly by determining the bending angle ⁇ of the bent portion 30 so that the opening area of the opening increases as the vicinity of the end forming the opening approaches the end 6.
  • An example is shown. However, it may be bent in a curved line, and the opening area of the opening may increase as it approaches the end 6.
  • the magnetic shielding portion 3 shows an example in which both end portions are bent so that the opening area of the opening becomes larger as the vicinity of both end portions forming the opening approaches the end portion 6. However, it may be formed so that the opening area of the opening becomes larger as the vicinity of the end portion on the side adjacent to the adjacent phase approaches the end portion 6.
  • the present invention is not limited to the above-described embodiment, and other embodiments considered within the scope of the technical idea of the present invention are also included within the scope of the present invention as long as the features of the present invention are not impaired. .. Further, the configuration may be a combination of the above-described embodiment and a modified example.

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Abstract

Bent parts 30u, 30v are formed in magnetic shielding parts 3u, 3v such that as end part 6u vicinities forming an opening part 5u become closer to the end parts 6u, the opening surface area of the opening part 5u becomes larger. With respect to the U-phase and the V-phase adjacent thereto, the electric current flowing through the V-phase conductor Bv causes a magnetic field Bvu to be input from the V-phase to the U-phase and into the magnetic shielding part 3u. The magnetic field Bvu is guided by the bent parts 30u, 30v and concentrated in an end part 6u of the opening part 5u of the magnetic shielding part 3u. That is, the narrow gap between the bent parts 30u, 30v partially decreases magnetic resistance and makes it possible to focus magnetic flux in the bent parts 30u, 30v and reduce the amount of magnetic flux that flows into the magnetic shielding part 3u. As a result, a magnetic detection element 2u is not easily influenced by the magnetic fields of adjacent phases.

Description

電流検出装置Current detector
　本発明は、電流検出装置に関する。 The present invention relates to a current detector.
　導体の近傍に配置され、導体に流れる電流に応じて発生される磁場を検出して、導体に流れる電流量を検出する電流検出装置がある。電流検出装置は、例えば、直流を３相交流に変換するインバータから導出される３相の導体の近傍にそれぞれ配置される。
　特許文献１には、電流を流す導電部と、導電部に流れる電流によって生じる磁場を検出する検出部と、導電部および検出部を囲うシールドと、を備えた電流センサが開示されている。 There is a current detection device that is arranged near the conductor and detects the magnetic field generated according to the current flowing through the conductor to detect the amount of current flowing through the conductor. The current detection device is arranged near, for example, a three-phase conductor derived from an inverter that converts direct current into three-phase alternating current.
Patent Document 1 discloses a current sensor including a conductive portion through which a current flows, a detection unit for detecting a magnetic field generated by the current flowing through the conductive portion, and a shield surrounding the conductive portion and the detection portion.
特開２０１７－１８１４１５号公報Japanese Unexamined Patent Publication No. 2017-181415
　特許文献１に記載の技術は、隣接する導体に流れる電流による影響を受けて、電流検出精度が悪化する課題がある。 The technique described in Patent Document 1 has a problem that the current detection accuracy is deteriorated due to the influence of the current flowing through the adjacent conductor.
　本発明による電流検出装置は、第１電流検出素子と、第２電流検出素子と、第１導体の一部と前記第１電流検出素子とを収納する第１収納空間を形成し、かつ前記第１収納空間と外部とを繋げる第１開口部を形成する第１遮蔽部と、前記第１遮蔽部に隣接し、第２導体の一部と前記第２電流検出素子を収納する第２収納空間を形成し、かつ前記第２収納空間と外部とを繋げる第２開口部を形成する第２遮蔽部と、を備え、前記第１遮蔽部は、前記第１開口部を形成する端部近傍が前記端部に近づくにつれて前記第１開口部の開口面積が大きくなるように形成され、前記第２遮蔽部は、前記第２開口部を形成する端部近傍が前記端部に近づくにつれて前記第２開口部の開口面積が大きくなるように形成される。 The current detection device according to the present invention forms a first storage space for accommodating the first current detection element, the second current detection element, a part of the first conductor, and the first current detection element, and the first 1 A first shield that forms a first opening that connects the storage space and the outside, and a second storage space that is adjacent to the first shield and houses a part of the second conductor and the second current detection element. The first shielding portion includes a second shielding portion that forms a second opening that connects the second storage space and the outside, and the first shielding portion has a portion near the end that forms the first opening. The opening area of the first opening is formed to increase as it approaches the end, and the second shielding portion is formed so that the vicinity of the end forming the second opening approaches the end. It is formed so that the opening area of the opening is large.
　本発明によれば、隣接する導体に流れる電流による影響を抑えて、電流検出精度の悪化を軽減することができる。 According to the present invention, it is possible to suppress the influence of the current flowing through the adjacent conductor and reduce the deterioration of the current detection accuracy.
電流検出装置の斜視図である。It is a perspective view of the current detection device. 電流検出装置の断面図である。It is sectional drawing of the current detection device. （Ａ）（Ｂ）磁気遮蔽部の形状の違いによる外部からの磁場を示す図である。(A) (B) It is a figure which shows the magnetic field from the outside due to the difference in the shape of the magnetic shielding part. （Ａ）（Ｂ）磁気遮蔽部の形状の違いによる隣相からの磁場を示す図である。(A) (B) It is a figure which shows the magnetic field from the adjacent phase by the difference in the shape of the magnetic shielding part.
　図１は、本実施形態に係る電流検出装置１００の斜視図である。
　電流検出装置１００は、本実施形態では、Ｕ相、Ｖ相、Ｗ相の導体Ｂｕ、Ｂｖ、Ｂｗに、図示直交する３方向（Ｘ軸、Ｙ軸、およびＺ軸方向）のうちＺ軸方向に流れる電流の値を非接触で検出する。 FIG. 1 is a perspective view of the current detection device 100 according to the present embodiment.
In the present embodiment, the current detection device 100 is in the Z-axis direction among the three directions (X-axis, Y-axis, and Z-axis directions) orthogonal to the U-phase, V-phase, and W-phase conductors Bu, Bv, and Bw. The value of the current flowing through is detected in a non-contact manner.
　電流検出装置１００は、Ｕ相の電流検出装置１００ｕ、Ｖ相の電流検出装置１００ｖ、およびＷ相の電流検出装置１００ｗを、図示直交する３方向（Ｘ軸、Ｙ軸、およびＺ軸方向）のうちＸ軸方向に並列的に設置して構成される。 The current detection device 100 is a U-phase current detection device 100u, a V-phase current detection device 100v, and a W-phase current detection device 100w in three directions (X-axis, Y-axis, and Z-axis directions) orthogonal to each other. Of these, it is configured by installing in parallel in the X-axis direction.
　電流検出装置１００ｕは、Ｕ相の導体Ｂｕに流れる電流の値を非接触で検出する。電流検出装置１００ｖは、Ｖ相の導体Ｂｖに流れる電流の値を非接触で検出する。電流検出装置１００ｗは、Ｗ相の導体Ｂｗに流れる電流の値を非接触で検出する。 The current detection device 100u detects the value of the current flowing through the U-phase conductor Bu in a non-contact manner. The current detection device 100v detects the value of the current flowing through the V-phase conductor Bv in a non-contact manner. The current detection device 100w detects the value of the current flowing through the W-phase conductor Bw in a non-contact manner.
　Ｕ相の電流検出装置１００ｕの構成を説明する。Ｕ相の導体Ｂｕの図示上部の近傍には、基板１ｕに載置された磁気検出素子２ｕが設けられる。導体Ｂｕの所定の長さ部分と、基板１ｕおよび磁気検出素子２ｕは、断面が略Ｕ字状の磁気遮蔽部３ｕに収納される。すなわち、磁気遮蔽部３ｕは、導体Ｂｕの一部分と、基板１ｕおよび磁気検出素子２ｕとを収納する収納空間４ｕを形成し、収納空間４ｕと外部を繋げる開口部５ｕを形成する。そして、磁気遮蔽部３ｕは、開口部５ｕを形成する端部６ｕ近傍が、端部６ｕに近づくにつれて、開口部５ｕの開口面積が大きくなるように形成される。 The configuration of the U-phase current detection device 100u will be described. A magnetic detection element 2u mounted on the substrate 1u is provided in the vicinity of the upper part of the U-phase conductor Bu in the drawing. A predetermined length portion of the conductor Bu, the substrate 1u, and the magnetic detection element 2u are housed in a magnetic shielding portion 3u having a substantially U-shaped cross section. That is, the magnetic shielding portion 3u forms a storage space 4u that houses a part of the conductor Bu, the substrate 1u, and the magnetic detection element 2u, and forms an opening 5u that connects the storage space 4u and the outside. The magnetic shielding portion 3u is formed so that the opening area of the opening 5u increases as the vicinity of the end 6u forming the opening 5u approaches the end 6u.
　Ｖ相の電流検出装置１００ｖの構成、およびＷ相の電流検出装置１００ｗの構成は、Ｕ相の電流検出装置１００ｕの構成と同様である。 The configuration of the V-phase current detection device 100v and the configuration of the W-phase current detection device 100w are the same as the configuration of the U-phase current detection device 100u.
　導体Ｂｕ、Ｂｖ、Ｂｗは、Ｚ軸方向に延伸し、Ｚ軸方向に電流を流す電流導体である。
導体Ｂｕ、Ｂｖ、Ｂｗは、電流を流す導電性の材料よりなる。導体Ｂｕ、Ｂｖ、Ｂｗは、電流が流れる値に応じて、周囲に磁場を発生させる。 Conductors Bu, Bv, and Bw are current conductors that extend in the Z-axis direction and allow current to flow in the Z-axis direction.
The conductors Bu, Bv, and Bw are made of a conductive material through which an electric current flows. The conductors Bu, Bv, and Bw generate a magnetic field around them according to the value at which the current flows.
　磁気検出素子２ｕ、２ｖ、２ｗは、導体Ｂｕ、Ｂｖ、Ｂｗに流れる電流によって生じる磁場を検出する。磁気検出素子２ｕ、２ｖ、２ｗは、例えば、図１におけるＸ軸方向と略平行な磁場を検出する。磁気検出素子２ｕ、２ｖ、２ｗは、例えば、Si、GaAsなどの半導体が用いられ、検知した磁場（磁界）を電圧に変換し、変換された電圧はモータの制御に用いられる。 The magnetic detection elements 2u, 2v, and 2w detect the magnetic field generated by the current flowing through the conductors Bu, Bv, and Bw. The magnetic detection elements 2u, 2v, and 2w detect, for example, a magnetic field substantially parallel to the X-axis direction in FIG. For the magnetic detection elements 2u, 2v, and 2w, for example, semiconductors such as Si and GaAs are used, and the detected magnetic field (magnetic field) is converted into a voltage, and the converted voltage is used for controlling the motor.
　磁気遮蔽部３ｕ、３ｖ、３ｗは、Ｘ軸方向の幅をＷ、Ｙ軸方向の高さをＨ、Ｚ軸方向の奥行きをＬ（図示省略）とする。磁気遮蔽部３ｕ、３ｖ、３ｗは、珪素鋼板で構成され、電流による磁束の集磁と外部からの磁界の遮蔽機能をもつ。例えば、Si-Fe,Ni-Feなどの高飽和磁束密度を持つ磁性材料から構成される。磁気遮蔽部３ｕ、３ｖ、３ｗは、内側に磁気検出素子２ｕ、２ｖ、２ｗ、および導体Ｂｕ、Ｂｖ、Ｂｗの一部を配置させ、磁気検出素子２ｕ、２ｖ、２ｗに外部から入力する磁場を遮蔽して、外乱の影響を低減させる。 For the magnetic shielding portions 3u, 3v, and 3w, the width in the X-axis direction is W, the height in the Y-axis direction is H, and the depth in the Z-axis direction is L (not shown). The magnetic shielding portions 3u, 3v, and 3w are made of silicon steel plate, and have a function of collecting magnetic flux by an electric current and a function of shielding a magnetic field from the outside. For example, it is composed of a magnetic material having a high saturation magnetic flux density such as Si-Fe and Ni-Fe. The magnetic shielding portions 3u, 3v, and 3w have magnetic detection elements 2u, 2v, 2w, and a part of conductors Bu, Bv, and Bw arranged inside, and a magnetic field input from the outside to the magnetic detection elements 2u, 2v, and 2w. Shield to reduce the effects of disturbances.
　図２は、本実施形態に係る電流検出装置１００の断面図である。この断面図は、図１のＸ軸Ｙ軸により形成される面と平行な面の断面である。図１と同一の個所には同一の符号を付してその説明を省略する。Ｕ相の電流検出装置１００ｕ、Ｖ相の電流検出装置１００ｖ、およびＷ相の電流検出装置１００ｗが、図示直交する３方向（Ｘ軸、Ｙ軸、およびＺ軸方向）のうちＸ軸方向に並列的に設置される。そして、磁気遮蔽部３ｕ、３ｖ、３ｗは、開口部５ｕ、５ｖ、５ｗを形成する端部６ｕ、６ｖ、６ｗ近傍が、端部６ｕ、６ｖ、６ｗに近づくにつれて、開口部５ｕ、５ｖ、５ｗの開口面積が大きくなるように形成される。 FIG. 2 is a cross-sectional view of the current detection device 100 according to the present embodiment. This cross-sectional view is a cross-sectional view of a plane parallel to the plane formed by the X-axis and Y-axis of FIG. The same parts as those in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted. The U-phase current detection device 100u, the V-phase current detection device 100v, and the W-phase current detection device 100w are parallel to the X-axis direction among the three orthogonal directions (X-axis, Y-axis, and Z-axis directions) shown in the drawing. Is installed. The magnetic shielding portions 3u, 3v, and 3w have openings 5u, 5v, and 5w as the vicinity of the ends 6u, 6v, and 6w forming the openings 5u, 5v, and 5w approaches the ends 6u, 6v, and 6w. Is formed so that the opening area of is large.
　本実施形態では、電流検出装置１００は、Ｕ相、Ｖ相、Ｗ相の３相分の導体Ｂｕ、Ｂｖ、Ｂｗに流れる電流をそれぞれ検出する。電流検出装置１００は、磁気検出素子２ｕ、２ｖ、２ｗと磁気遮蔽部３ｕ、３ｖ、３ｗを備えた所謂、コアレス電流センサである。コアレス電流センサは、導体Ｂｕ、Ｂｖ、Ｂｗが電流の通電により発生する磁場を磁気遮蔽部３ｕ、３ｖ、３ｗにより集磁して磁束密度を高め、磁気検出素子２ｕ、２ｖ、２ｗで検出して、電圧出力する。なお、コアレス電流センサではコア式と比較して小型である一方、磁気遮蔽部３ｕ、３ｖ、３ｗによる磁気遮蔽効果が弱いため、検出対象である導体Ｂｕ、Ｂｖ、Ｂｗに発生する磁界以外の外乱磁場（クロストークなど）の影響による検出誤差が発生しやすく、電流検出精度が悪化してしまう問題がある。 In the present embodiment, the current detection device 100 detects the currents flowing through the conductors Bu, Bv, and Bw for the three phases of the U phase, the V phase, and the W phase, respectively. The current detection device 100 is a so-called coreless current sensor including magnetic detection elements 2u, 2v, 2w and magnetic shielding portions 3u, 3v, 3w. The coreless current sensor collects the magnetic field generated by the current energization of the conductors Bu, Bv, and Bw by the magnetic shielding portions 3u, 3v, and 3w to increase the magnetic flux density, and detects them by the magnetic detection elements 2u, 2v, and 2w. , Voltage output. Although the coreless current sensor is smaller than the core type, the magnetic shielding effect of the magnetic shielding portions 3u, 3v, and 3w is weak, so that disturbances other than the magnetic field generated in the conductors Bu, Bv, and Bw to be detected are disturbed. There is a problem that detection error is likely to occur due to the influence of a magnetic field (crosstalk, etc.) and the current detection accuracy deteriorates.
　図３（Ａ）、図３（Ｂ）は、磁気遮蔽部３の形状の違いによる外部からの磁場を示す図である。図３（Ａ）は本実施形態の比較例を、図３（Ｂ）は本実施形態を示す。図３（Ａ）、図３（Ｂ）ではＵ相の電流検出装置１００ｕの例で説明する。図１、図２と同一の個所には同一の符号を付してその説明を省略する。 3 (A) and 3 (B) are diagrams showing a magnetic field from the outside due to a difference in the shape of the magnetic shielding portion 3. FIG. 3 (A) shows a comparative example of the present embodiment, and FIG. 3 (B) shows the present embodiment. In FIGS. 3A and 3B, an example of the U-phase current detection device 100u will be described. The same parts as those in FIGS. 1 and 2 are designated by the same reference numerals, and the description thereof will be omitted.
　図３（Ａ）に示す比較例における磁気遮蔽部３’ｕは略Ｕ字状に形成され、開口部を形成する端部を含めてその開口面積は変わらない。一方、図３（Ｂ）に示す本実施形態における磁気遮蔽部３ｕは、開口部を形成する端部近傍が端部６ｕに近づくにつれて開口部の開口面積が大きくなるように、屈曲部３０ｕが形成されている。屈曲部３０ｕの屈曲角度θは、２０度～６０度が好ましい。 The magnetic shielding portion 3'u in the comparative example shown in FIG. 3A is formed in a substantially U shape, and the opening area thereof including the end portion forming the opening does not change. On the other hand, in the magnetic shielding portion 3u in the present embodiment shown in FIG. 3B, the bent portion 30u is formed so that the opening area of the opening increases as the vicinity of the end portion forming the opening approaches the end portion 6u. Has been done. The bending angle θ of the bent portion 30u is preferably 20 to 60 degrees.
　図３（Ａ）に示すように、磁気遮蔽部３’ｕの外部Ｘ軸方向から磁場Ｂが作用した場合、磁気遮蔽部３’ｕを透過した磁場Ｂ’はＸ軸方向に向けて誘導され、その後Ｙ軸方向へ向かう。一方、本実施形態では、図３（Ｂ）に示すように、磁気遮蔽部３ｕの外部Ｘ軸方向から磁場Ｂが作用した場合、磁気遮蔽部３ｕを透過した磁場Ｂ’は屈曲部３０ｕにより、Ｙ軸方向に誘導される。すなわち、本実施形態では、磁気検出素子２ｕは外部からの磁場の影響を低減できる。 As shown in FIG. 3A, when the magnetic field B acts from the external X-axis direction of the magnetic shielding portion 3'u, the magnetic field B'transmitted through the magnetic shielding portion 3'u is guided in the X-axis direction. After that, it goes in the Y-axis direction. On the other hand, in the present embodiment, as shown in FIG. 3B, when the magnetic field B acts from the external X-axis direction of the magnetic shielding portion 3u, the magnetic field B'passed through the magnetic shielding portion 3u is generated by the bent portion 30u. It is guided in the Y-axis direction. That is, in the present embodiment, the magnetic detection element 2u can reduce the influence of the magnetic field from the outside.
　図４（Ａ）、図４（Ｂ）は、磁気遮蔽部３の形状の違いによる隣相からの磁場を示す図である。図４（Ａ）は本実施形態の比較例を、図４（Ｂ）は本実施形態を示す。図１、図２と同一の個所には同一の符号を付してその説明を省略する。 4 (A) and 4 (B) are diagrams showing the magnetic fields from the adjacent phases due to the difference in the shape of the magnetic shielding portion 3. FIG. 4A shows a comparative example of the present embodiment, and FIG. 4B shows the present embodiment. The same parts as those in FIGS. 1 and 2 are designated by the same reference numerals, and the description thereof will be omitted.
　図４（Ａ）に示す比較例における磁気遮蔽部３’ｕは略Ｕ字状に形成され、開口部を形成する端部を含めてその開口面積は変わらない。Ｕ相とその隣相であるＶ相に着目すると、Ｖ相の導体Ｂｖに流れる電流の影響により、Ｖ相からＵ相へ磁場Ｂ’ｖｕが－Ｘ軸方向に磁気遮蔽部３’ｕに入力される。磁場Ｂ’ｖｕは、磁気遮蔽部３’ｕの側面の全面に入力される。すなわち、磁気抵抗が均一のため隣相からの磁束がほぼ均一に流れ込む。このため、比較例では、磁気検出素子２ｕは外部からの磁場の影響を受けやすい。 The magnetic shielding portion 3'u in the comparative example shown in FIG. 4 (A) is formed in a substantially U shape, and the opening area thereof including the end portion forming the opening does not change. Focusing on the U phase and its adjacent V phase, the magnetic field B'vu from the V phase to the U phase is input to the magnetic shield 3'u in the -X axis direction due to the influence of the current flowing through the conductor Bv of the V phase. Will be done. The magnetic field B'vu is input to the entire surface of the side surface of the magnetic shielding portion 3'u. That is, since the magnetic resistance is uniform, the magnetic flux from the adjacent phase flows almost uniformly. Therefore, in the comparative example, the magnetic detection element 2u is easily affected by an external magnetic field.
　一方、図４（Ｂ）に示す本実施形態における磁気遮蔽部３ｕ、３ｖは、開口部５ｕを形成する端部６ｕ近傍が端部６ｕに近づくにつれて開口部５ｕの開口面積が大きくなるように、屈曲部３０ｕ、３０ｖが形成されている。Ｕ相とその隣相であるＶ相に着目すると、Ｖ相の導体Ｂｖに流れる電流の影響により、Ｖ相からＵ相へ磁場Ｂｖｕが磁気遮蔽部３ｕに入力されるが、磁場Ｂｖｕは屈曲部３０ｕ、３０ｖに誘導されて、磁気遮蔽部３ｕの開口部５ｕの端部６ｕに集中する。すなわち、隣接する屈曲部３０ｕ、３０ｖの空隙が狭いため、部分的に磁気抵抗が小さくなり隣接する屈曲部３０ｕ、３０ｖに磁束を集中させることができ、磁気遮蔽部３ｕ内部に流入する磁束を低減できる。このため、本実施形態では、磁気検出素子２ｕは隣相からの磁場の影響を受けにくくなる。 On the other hand, in the magnetic shielding portions 3u and 3v in the present embodiment shown in FIG. 4B, the opening area of the opening 5u increases as the vicinity of the end 6u forming the opening 5u approaches the end 6u. Bent portions 30u and 30v are formed. Focusing on the U phase and its adjacent V phase, the magnetic field Bvu is input from the V phase to the U phase into the magnetic shielding portion 3u due to the influence of the current flowing through the conductor Bv of the V phase, but the magnetic field Bvu is the bent portion. Guided by 30u and 30v, it concentrates on the end 6u of the opening 5u of the magnetic shielding portion 3u. That is, since the voids of the adjacent bent portions 30u and 30v are narrow, the magnetic resistance is partially reduced and the magnetic flux can be concentrated on the adjacent bent portions 30u and 30v, and the magnetic flux flowing into the magnetic shielding portion 3u is reduced. it can. Therefore, in the present embodiment, the magnetic detection element 2u is less susceptible to the influence of the magnetic field from the adjacent phase.
　電流検出装置１００は、例えば、直流を３相交流に変換するインバータから導出される３相の導体の近傍に配置され、Ｕ相、Ｖ相、Ｗ相の導体Ｂｕ、Ｂｖ、Ｂｗに流れる電流の値を非接触で検出する。導体Ｂｕ、Ｂｖ、Ｂｗに流れる電流はモータへ供給されるが、本実施形態による電流検出装置１００により、検出誤差を低減できるので、検出した電流値に基づいてモータのトルク精度を向上させることができる。また、磁気遮蔽部３の磁気遮蔽能力は透磁率に依存するが、磁気遮蔽部３として透磁率が低い材料を採用することも可能である。 The current detection device 100 is arranged near, for example, a three-phase conductor derived from an inverter that converts direct current into three-phase alternating current, and the current flowing through the U-phase, V-phase, and W-phase conductors Bu, Bv, and Bw. Detect values non-contact. The current flowing through the conductors Bu, Bv, and Bw is supplied to the motor. However, since the detection error can be reduced by the current detection device 100 according to the present embodiment, the torque accuracy of the motor can be improved based on the detected current value. it can. Further, although the magnetic shielding ability of the magnetic shielding portion 3 depends on the magnetic permeability, it is also possible to use a material having a low magnetic permeability as the magnetic shielding portion 3.
　本実施形態によれば、磁気遮蔽部３の端部の開口面積を広げ、隣接するＸ軸成分の外乱磁場をＹ軸方向に誘導することで、磁気検出素子２が検出する外乱磁場の強度を下げ、検出誤差を低減することができる。換言すれば、磁気遮蔽部３の端部において隣相との磁気結合を高めることで磁気検出素子２の設置位置における隣相からの磁束の流れ込みを低減する。 According to the present embodiment, the strength of the disturbance magnetic field detected by the magnetic detection element 2 is increased by expanding the opening area at the end of the magnetic shielding portion 3 and inducing the disturbance magnetic field of the adjacent X-axis component in the Y-axis direction. It can be lowered and the detection error can be reduced. In other words, by enhancing the magnetic coupling with the adjacent phase at the end of the magnetic shielding portion 3, the inflow of magnetic flux from the adjacent phase at the installation position of the magnetic detection element 2 is reduced.
　以上説明した実施形態によれば、次の作用効果が得られる。
（１）電流検出装置１００は、第１電流検出素子２ｕと、第２電流検出素子２ｖと、第１導体Ｂｕの一部と第１電流検出素子２ｕとを収納する第１収納空間４ｕを形成し、かつ第１収納空間４ｕと外部とを繋げる第１開口部５ｕを形成する第１遮蔽部３ｕと、第１遮蔽部３ｕに隣接し、第２導体Ｂｖの一部と第２電流検出素子２ｖを収納する第２収納空間４ｖを形成し、かつ第２収納空間４ｖと外部とを繋げる第２開口部５ｖを形成する第２遮蔽部３ｖと、を備え、第１遮蔽部３ｕは、第１開口部５ｕを形成する端部６ｕ近傍が端部６ｕに近づくにつれて第１開口部５ｕの開口面積が大きくなるように形成され、第２遮蔽部３ｖは、第２開口部５ｖを形成する端部６ｖ近傍が端部６ｖに近づくにつれて第２開口部５ｖの開口面積が大きくなるように形成される。これにより、隣接する導体に流れる電流による影響を抑えて、電流検出精度の悪化を軽減することができる。 According to the embodiment described above, the following effects can be obtained.
(1) The current detection device 100 forms a first storage space 4u that houses the first current detection element 2u, the second current detection element 2v, a part of the first conductor Bu, and the first current detection element 2u. A part of the second conductor Bv and a second current detection element adjacent to the first shield 3u and the first shield 3u that form the first opening 5u that connects the first storage space 4u and the outside. The first shielding portion 3u is provided with a second shielding portion 3v that forms a second storage space 4v for accommodating 2v and forms a second opening 5v that connects the second storage space 4v and the outside. The vicinity of the end 6u forming the 1 opening 5u is formed so that the opening area of the first opening 5u becomes larger as the vicinity of the end 6u approaches the end 6u, and the second shielding portion 3v is the end forming the second opening 5v. It is formed so that the opening area of the second opening 5v increases as the vicinity of the portion 6v approaches the end portion 6v. As a result, it is possible to suppress the influence of the current flowing through the adjacent conductor and reduce the deterioration of the current detection accuracy.
（変形例）
　本発明は、以上説明した実施形態を次のように変形して実施することができる。
（１）磁気遮蔽部３は、開口部を形成する端部近傍が端部６に近づくにつれて開口部の開口面積が大きくなるように、屈曲部３０の屈曲角度θを定めて、直線的に屈曲する例を示した。しかし、曲線的に屈曲してもよく、端部６に近づくにつれて開口部の開口面積が大きくなれば良い。 (Modification example)
The present invention can be implemented by modifying the embodiment described above as follows.
(1) The magnetic shielding portion 3 bends linearly by determining the bending angle θ of the bent portion 30 so that the opening area of the opening increases as the vicinity of the end forming the opening approaches the end 6. An example is shown. However, it may be bent in a curved line, and the opening area of the opening may increase as it approaches the end 6.
（２）磁気遮蔽部３は、開口部を形成する両端部近傍が端部６に近づくにつれて開口部の開口面積が大きくなるように、両端部が屈曲する例を示した。しかし、少なくとも隣相と隣接する側の端部近傍が端部６に近づくにつれて開口部の開口面積が大きくなるように形成すれば良い。 (2) The magnetic shielding portion 3 shows an example in which both end portions are bent so that the opening area of the opening becomes larger as the vicinity of both end portions forming the opening approaches the end portion 6. However, it may be formed so that the opening area of the opening becomes larger as the vicinity of the end portion on the side adjacent to the adjacent phase approaches the end portion 6.
　本発明は、上記の実施形態に限定されるものではなく、本発明の特徴を損なわない限り、本発明の技術思想の範囲内で考えられるその他の形態についても、本発明の範囲内に含まれる。また、上述の実施形態と変形例を組み合わせた構成としてもよい。 The present invention is not limited to the above-described embodiment, and other embodiments considered within the scope of the technical idea of the present invention are also included within the scope of the present invention as long as the features of the present invention are not impaired. .. Further, the configuration may be a combination of the above-described embodiment and a modified example.
１ｕ、１ｖ、１ｗ　基板
２ｕ、２ｖ、２ｗ　磁気検出素子
３ｕ、３ｖ、３ｗ　磁気遮蔽部
４ｕ、４ｖ、４ｗ　収納空間
５ｕ、５ｖ、５ｗ　開口部
６ｕ、６ｖ、６ｗ　端部
Ｂｕ、Ｂｖ、Ｂｗ　導体
１００　電流検出装置
１００ｕ　Ｕ相の電流検出装置
１００ｖ　Ｖ相の電流検出装置
１００ｗ　Ｗ相の電流検出装置
  1u, 1v, 1w Substrate 2u, 2v, 2w Magnetic detection element 3u, 3v, 3w Magnetic shield 4u, 4v, 4w Storage space 5u, 5v, 5w Opening 6u, 6v, 6w End Bu, Bv, Bw Conductor 100 Current detector 100u U-phase current detector 100v V-phase current detector 100w W-phase current detector

Claims (3)

  1. 　第１電流検出素子と、
    　第２電流検出素子と、
    　第１導体の一部と前記第１電流検出素子とを収納する第１収納空間を形成し、かつ前記第１収納空間と外部とを繋げる第１開口部を形成する第１遮蔽部と、
    　前記第１遮蔽部に隣接し、第２導体の一部と前記第２電流検出素子を収納する第２収納空間を形成し、かつ前記第２収納空間と外部とを繋げる第２開口部を形成する第２遮蔽部と、を備え、
    　前記第１遮蔽部は、前記第１開口部を形成する端部近傍が前記端部に近づくにつれて前記第１開口部の開口面積が大きくなるように形成され、
    　前記第２遮蔽部は、前記第２開口部を形成する端部近傍が前記端部に近づくにつれて前記第２開口部の開口面積が大きくなるように形成される電流検出装置。     The first current detection element and
    The second current detection element and
    A first shielding portion that forms a first storage space that houses a part of the first conductor and the first current detection element, and forms a first opening that connects the first storage space and the outside.
    Adjacent to the first shielding portion, a second storage space for accommodating a part of the second conductor and the second current detection element is formed, and a second opening for connecting the second storage space and the outside is formed. With a second shield
    The first shielding portion is formed so that the opening area of the first opening becomes larger as the vicinity of the end forming the first opening approaches the end.
    The second shielding portion is a current detection device formed so that the opening area of the second opening increases as the vicinity of the end forming the second opening approaches the end.
  2. 　請求項１に記載の電流検出装置において、
    　前記第１遮蔽部および前記第２遮蔽部は、前記第１開口部および前記第２開口部を形成する端部近傍が前記端部に近づくにつれて所定の角度広がって形成される電流検出装置。     In the current detection device according to claim 1,
    The first shielding portion and the second shielding portion are current detection devices formed by expanding a predetermined angle as the vicinity of the end portion forming the first opening portion and the second opening portion approaches the end portion.
  3. 　請求項１または請求項２に記載の電流検出装置において、
    　第３電流検出素子と、
    　前記第２遮蔽部に隣接し、第３導体の一部と前記第３電流検出素子とを収納する第３収納空間を形成し、かつ前記第３収納空間と外部とを繋げる第３開口部を形成する第３遮蔽部と、を備え、
    　前記第３遮蔽部は、前記第３開口部を形成する端部近傍が前記端部に近づくにつれて前記第３開口部の開口面積が大きくなるように形成される電流検出装置。     In the current detection device according to claim 1 or 2.
    With the third current detection element
    Adjacent to the second shielding portion, a third storage space for accommodating a part of the third conductor and the third current detection element is formed, and a third opening for connecting the third storage space and the outside is provided. With a third shielding part to be formed,
    The third shielding portion is a current detection device formed so that the opening area of the third opening increases as the vicinity of the end forming the third opening approaches the end.
PCT/JP2020/019720 2019-05-27 2020-05-19 Electric current detection device WO2020241367A1 (en)

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Citations (5)

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JP2013148513A (en) * 2012-01-20 2013-08-01 Aisin Seiki Co Ltd Current sensor
JP2014006181A (en) * 2012-06-26 2014-01-16 Aisin Seiki Co Ltd Current sensor
JP2014160035A (en) * 2013-02-20 2014-09-04 Aisin Seiki Co Ltd Current sensor
JP2017181415A (en) * 2016-03-31 2017-10-05 旭化成エレクトロニクス株式会社 Current sensor, shield, and manufacturing method
WO2018159229A1 (en) * 2017-02-28 2018-09-07 パナソニックＩｐマネジメント株式会社 Current detector

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Publication number Priority date Publication date Assignee Title
JP2013148513A (en) * 2012-01-20 2013-08-01 Aisin Seiki Co Ltd Current sensor
JP2014006181A (en) * 2012-06-26 2014-01-16 Aisin Seiki Co Ltd Current sensor
JP2014160035A (en) * 2013-02-20 2014-09-04 Aisin Seiki Co Ltd Current sensor
JP2017181415A (en) * 2016-03-31 2017-10-05 旭化成エレクトロニクス株式会社 Current sensor, shield, and manufacturing method
WO2018159229A1 (en) * 2017-02-28 2018-09-07 パナソニックＩｐマネジメント株式会社 Current detector

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