WO2020232735A1 - Magnetic sensor module - Google Patents

Magnetic sensor module Download PDF

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Publication number
WO2020232735A1
WO2020232735A1 PCT/CN2019/089142 CN2019089142W WO2020232735A1 WO 2020232735 A1 WO2020232735 A1 WO 2020232735A1 CN 2019089142 W CN2019089142 W CN 2019089142W WO 2020232735 A1 WO2020232735 A1 WO 2020232735A1
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WIPO (PCT)
Prior art keywords
magnetoresistive
chip
magnetoresistive chip
substrate
magnetic
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PCT/CN2019/089142
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French (fr)
Chinese (zh)
Inventor
邹泉波
曹志强
丁凯文
Original Assignee
歌尔微电子有限公司
北京航空航天大学青岛研究院
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Publication of WO2020232735A1 publication Critical patent/WO2020232735A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/30—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring angles or tapers; for testing the alignment of axes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices

Definitions

  • the utility model relates to the field of sensors, and more specifically, the utility model relates to a magnetic sensor module.
  • One purpose of the present invention is to provide a magnetic sensor module.
  • a magnetic sensor module which includes a substrate and a first magnetoresistive chip and a second magnetoresistive chip arranged on the substrate;
  • the structure is the same, and they both include a substrate and a magnetoresistance arranged on the substrate; wherein the arrangement angle of the second magnetoresistive chip on the substrate is different from that of the first magnetoresistive chip, so that the magnetoresistance in the first magnetoresistive chip
  • the magnetic induction direction of is different from the magnetic induction direction of the magnetic resistance in the second magnetoresistive chip.
  • the magnetic induction direction of the magnetic resistance in the first magnetoresistive chip and the magnetic induction direction of the magnetic resistance in the second magnetoresistive chip are completely opposite.
  • a pad is further provided on the same side of the substrate as the magnetoresistance, and the first magnetoresistive chip and the second magnetoresistive chip are laid out on the substrate; The pads of the two magnetoresistive chips are welded to the corresponding pads provided on the substrate; the second magnetoresistive chip is rotated 180° relative to the first magnetoresistive chip and mounted.
  • the first magnetoresistive chip and the second magnetoresistive chip are laid flat on a substrate, and the side of the substrate away from the magnetoresistance is mounted on the substrate; the second magnetoresistive chip is relatively The magnetoresistive chip is installed with a rotation of 180°.
  • a pad is further provided on the same side of the substrate as the magnetic resistance, and the substrate of the first magnetic resistance chip is mounted on the substrate on the side far away from the magnetic resistance;
  • the pads of the resistance chip and the pads of the first magnetoresistive chip are correspondingly welded together; the second magnetoresistive chip is rotated 180° relative to the first magnetoresistive chip and mounted.
  • At least two first magnetoresistive chips and at least two second magnetoresistive chips there are at least two first magnetoresistive chips and at least two second magnetoresistive chips, and the at least two first magnetoresistive chips and the at least two second magnetoresistive chips form a Wheatstone full bridge detection circuit. .
  • the first magnetoresistive chip there are at least two magnetoresistances on the first magnetoresistive chip and the second magnetoresistive chip.
  • the first magnetoresistive chip and the second magnetoresistive chip are laid flat on the substrate, and the second magnetoresistive chip is mounted at 90° rotation relative to the first magnetoresistive chip;
  • the magnetic induction direction of the resistance and the magnetic induction direction of the magnetic resistance in the second magnetic resistance chip are perpendicular to each other.
  • the first magnetoresistive chip and the second magnetoresistive chip are respectively provided with two, wherein the magnetic induction direction of the magnetoresistance in the two first magnetoresistive chips is opposite, and the magnetic induction of the magnetoresistance in the two second magnetoresistive chips Opposite direction
  • Two first magnetoresistive chips form a Wheatstone detection circuit
  • two second magnetoresistance chips form a Wheatstone detection circuit.
  • the magnetic sensor module is an angle sensor module.
  • the magnetoresistive chips with the same structure are arranged on the substrate in different ways to obtain detection mechanisms with different magnetic induction directions, which can flexibly meet the multi-axis detection of the magnetic sensor module or improve the magnetic sensor model.
  • the sensitivity of the group is not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, but not limited to, the magnetoresistive chips with the same structure.
  • FIG. 1 is a schematic structural diagram of the first embodiment of the magnetic sensor module of the present invention.
  • Fig. 2 is a schematic structural diagram of a second embodiment of the magnetic sensor module of the present invention.
  • FIG. 3 is a schematic diagram of the third embodiment of the magnetic sensor module of the present invention.
  • FIG. 4 is a schematic diagram of the structure of the fourth embodiment of the magnetic sensor module of the present invention.
  • Fig. 5 is a schematic structural diagram of a fifth embodiment of the magnetic sensor module of the present invention.
  • the utility model provides a magnetic sensor module, which can be an angle sensor module, a displacement sensor module, or other types of sensor modules well known to those skilled in the art, which will not be listed here. Now take the angle sensor module as an example to describe the technical solution of the present utility model in detail.
  • the magnetic sensor module of the present invention includes a substrate 1 and a first magnetoresistive chip 2 and a second magnetoresistive chip 3 arranged on the substrate 1.
  • the substrate 1 of the present invention can be a circuit board.
  • the first magnetoresistive chip 2 and the second magnetoresistive chip 3 are arranged on the circuit board in a manner well known to those skilled in the art, and conduct the chip to the circuit inside the circuit board. Layout.
  • the first magnetoresistive chip 2 and the second magnetoresistive chip 3 of the present invention have the same structure, and they can be produced in batches through the same process.
  • the first magnetoresistive chip 2 and the second magnetoresistive chip 3 may be cut from the same wafer, or from different wafers of the same batch or different batches.
  • the wafers of these chips are processed and manufactured according to the same process, so their structure is consistent.
  • the magnetic induction direction of the magnetoresistance is the same, which is limited by the manufacturing process, and will not be described in detail here.
  • the first magnetoresistive chip 2 includes a first substrate 20 and a first magnetoresistor 22 disposed on the first substrate 20, and a first pad 21 is also disposed on the first substrate 20 to facilitate Connect with the circuit board.
  • the first pad 21 is arranged on the same side of the first substrate 20 as the first magnetic resistor 22.
  • the first pad 21 may also be provided on the side of the first substrate 20 opposite to the first magnetic resistance 22.
  • the second magnetoresistive chip 3 includes a second substrate 30 and a second magnetoresistor 32 provided on the second substrate 30, and a second pad 31 is also provided on the second substrate 30 for To connect with the circuit board.
  • the second pad 31 is arranged on the same side of the second substrate 30 as the second magnetic resistance 32.
  • the second pad 31 may also be provided on the side of the second substrate 30 opposite to the second magnetic resistance 32.
  • the first magnetoresistance 22 and the second magnetoresistance 32 of the present invention can adopt giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) or anisotropic magnetoresistance (AMR).
  • GMR giant magnetoresistance
  • TMR tunnel magnetoresistance
  • AMR anisotropic magnetoresistance
  • the arrangement angles of the first magnetoresistive chip 2 and the second magnetoresistive chip 3 on the substrate 1 are different, so that the magnetic induction directions of the magnetoresistor in the first magnetoresistive chip 2 and the second magnetoresistive chip 3 mounted on the substrate 1 are different .
  • the magnetic induction direction of the magnetoresistance in the first magnetoresistive chip 2 and the magnetic induction direction of the magnetoresistance in the second magnetoresistive chip 3 are completely opposite. Since the magnetic induction directions of the two magnetoresistors are opposite, when they are in a common changing magnetic field, the resistance value of one magnetoresistor will increase, the resistance value of the other magnetoresistor will decrease, and the amount of change of the two magnetoresistor will be the same. This allows the magnetoresistance in the two chips to form a real Wheatstone bridge, which improves the sensitivity of detection.
  • the first magnetoresistive chip 2 and the second magnetoresistive chip 3 are laid flat on the substrate 1.
  • the first pad 21 in the first magnetoresistive chip 2 and the third pad 10 provided on the substrate 1 are soldered together correspondingly, and the magnetic induction direction of the first magnetoresistor 22 in the first magnetoresistive chip 2 faces the right side of the figure.
  • the second pad 31 in the second magnetoresistive chip 3 and the fourth pad 11 provided on the substrate 1 are correspondingly welded together.
  • the first magnetoresistive chip 2 and the second magnetoresistive chip 3 are laid flat on the substrate 1.
  • the side of the first substrate of the first magnetoresistive chip 2 away from the first magnetoresistor 22 is mounted on the substrate 1, and the magnetic induction direction of the first magnetoresistor 22 in the first magnetoresistive chip 2 faces the right side of the figure.
  • the side of the second substrate of the second magnetoresistive chip 3 away from the second magnetoresistance 32 is mounted on the substrate 1.
  • the second magnetoresistive chip 3 it needs to be opposed to the first magnetoresistive chip 2 Rotate 180° horizontally for welding.
  • the magnetic induction direction of the second magnetoresistor 32 in the second magnetoresistive chip 3 faces the left as shown in the figure, ensuring that the magnetic induction directions of the magnetoresistor in the two chips are completely opposite.
  • the first magnetoresistive chip 2 and the second magnetoresistive chip 3 are stacked together in the height direction.
  • the side of the first substrate of the first magnetoresistive chip 2 away from the first magnetoresistor is mounted on the substrate 1, and the first pad 21 and the first magnetoresistor of the first magnetoresistive chip 2 are both facing upward.
  • the second magnetoresistive chip 3 is mounted upside down, and its second pad 31 and the first pad 21 of the first magnetoresistive chip 2 are soldered together correspondingly.
  • the magnetoresistive sensor chip with the same structure is arranged on the substrate in two different ways, realizing the detection of a true Wheatstone bridge and improving the detection sensitivity of the magnetic sensor module.
  • first magnetoresistor 22 in the first magnetoresistive chip 2 there may be at least two first magnetoresistor 22 in the first magnetoresistive chip 2, for example two.
  • the second magnetoresistance 32 in the second magnetoresistance chip 3 may be provided with at least two, for example, two. These four magnetic resistances can form a Wheatstone full bridge circuit.
  • At least two first magnetoresistive chips 2 and at least two second magnetoresistive chips 3 may be provided to form a Wheatstone full bridge circuit.
  • the magnetic induction direction of the first magnetic resistor in the first magnetoresistive chip 2 and the magnetic induction direction of the second magnetic resistor in the second magnetoresistive chip 3 are perpendicular to each other.
  • the magnetic induction direction of the first magnetic resistor in the first magnetoresistive chip 2 faces the positive X-axis
  • the magnetic induction direction of the second magnetic resistor in the second magnetoresistive chip 3 faces the positive Y-axis. Therefore, two-axis detection is formed by the two magnetoresistive chips, so as to realize the detection of X-axis and Y-axis.
  • the first magnetoresistive chip 4 and the second magnetoresistive chip 5 are laid flat on the substrate 1, and the second magnetoresistive chip 5 is rotated 90° relative to the first magnetoresistive chip 4, so that
  • the magnetic induction direction of the first magnetoresistance in the first magnetoresistive chip 4 faces the right side of the figure, for example, the positive direction of the X axis;
  • the induction direction of the second magnetoresistance in the second magnetoresistance chip 5 faces the bottom of the figure, for example, Y
  • the negative direction of the axis is
  • the magnetic sensor module constitutes a two-axis detection mechanism, and with the corresponding magnetic field, the first magnetoresistive chip 4 can sense changes in the X-axis direction, and the second magnetoresistive chip 5 can sense changes in the Y-axis direction.
  • the embodiment shown in Fig. 5 is different from the embodiment shown in Fig. 4 in that there are two first magnetoresistive chips and two second magnetoresistive chips, and the two first magnetoresistive chips constitute a Wheatstone bridge detection circuit.
  • the two second magnetoresistive chips constitute the Wheatstone bridge detection circuit.
  • the two first magnetoresistive chips are respectively marked as the first magnetoresistive chip a 40 and the first magnetoresistive chip b 41; the two second magnetoresistive chips are respectively marked as the second magnetoresistive chip a 50 and the second magnetoresistive chip b 51.
  • the first magnetoresistive chip a 40 and the first magnetoresistive chip b 41 are arranged in parallel on the substrate 1.
  • the magnetic induction direction of the magnetoresistance in the first magnetoresistive chip a 40 is the same as the magnetic induction direction of the magnetoresistance in the first magnetoresistive chip b 41. in contrast.
  • the magnetic induction direction of the magnetoresistance in the first magnetoresistive chip a 40 is towards the right of the figure, that is, the positive direction of the X axis; while the magnetic induction direction of the magnetoresistance in the first magnetoresistance chip b 41 is towards the left of the figure, that is X Axis negative.
  • the two first magnetoresistive chips constitute a real Wheatstone bridge detection, which improves the sensitivity of X-axis detection.
  • the second magnetoresistance chip a 50 and the second magnetoresistance chip b 51 are arranged in parallel, and the magnetic induction direction of the magnetoresistance in the second magnetoresistance chip a 50 is opposite to the magnetic induction direction of the magnetoresistance in the second magnetoresistance chip b 51.
  • the magnetic induction direction of the magnetoresistance in the second magnetoresistive chip a 50 faces the downward direction of the figure, that is, the negative direction of the Y axis; while the magnetic induction direction of the magnetoresistance in the second magnetoresistance chip b 51 faces the upward direction of the figure, that is, the Y axis to.
  • the two second magnetoresistive chips constitute a real Wheatstone bridge detection, which improves the sensitivity of Y-axis detection.
  • each first magnetoresistive chip and each second magnetoresistive chip can also be two or more to form a Wheatstone full-bridge detection circuit. This will not be explained in detail.

Abstract

A magnetic sensor module, comprising a base plate (1) and a first magnetoresistive chip (2) and second magnetoresistive chip (3) that are provided on the base plate; the first magnetoresistive chip (2) and the second magnetoresistive chip (3) have the same structure, and each comprises a substrate and a magnetoresistor provided on the substrate; the angle at which the second magnetoresistive chip (2) is arranged on the base plate (1) is different from that at which the first magnetoresistive chip (2) is arranged such that the magnetic induction direction of the magnetoresistor in the first magnetoresistive chip (2) is different from the magnetic induction direction of the magnetoresistor in the second magnetoresistive chip (3). In the present magnetic sensor module, magnetoresistive chips having the same structure are arranged on the base plate (1) in different ways so that detection mechanisms having different magnetic induction directions may be obtained, and the multi-axis detection of the magnetic sensor module may be flexibly attained or the sensitivity of the magnetic sensor module is improved.

Description

一种磁传感器模组A magnetic sensor module 技术领域Technical field
本实用新型涉及传感器领域，更具体地，本实用新型涉及一种磁传感器模组。The utility model relates to the field of sensors, and more specifically, the utility model relates to a magnetic sensor module.
背景技术Background technique
现有的利用磁阻感应原理进行检测的传感器中，例如角度传感器中。由于制造工艺的限制，在同一层制作磁阻的时候，该同一层磁阻的感应方向是一致的。这就导致了这些磁阻对磁场感应是相同的，例如这些磁阻同时增大或者同时减小，而无法构成真正的惠斯通电桥。这使得这些磁阻构成的惠斯通电桥，比传统惠斯通电桥的灵敏度降低了一半，SNR损耗约为6dB。Existing sensors that use the principle of magnetoresistive induction for detection, such as angle sensors. Due to the limitation of the manufacturing process, when the magnetoresistance is made in the same layer, the induction direction of the magnetoresistance of the same layer is the same. This leads to the fact that these magnetic resistances have the same induction to the magnetic field. For example, these magnetic resistances increase or decrease at the same time, and cannot form a true Wheatstone bridge. This makes the Wheatstone bridge composed of these magnetoresistances reduce the sensitivity by half compared with the traditional Wheatstone bridge, and the SNR loss is about 6dB.
实用新型内容Utility model content
本实用新型的一个目的是提供了一种磁传感器模组。One purpose of the present invention is to provide a magnetic sensor module.
根据本实用新型的一个方面，提供一种磁传感器模组，包括基板以及设置在基板上的第一磁阻芯片、第二磁阻芯片；所述第一磁阻芯片与第二磁阻芯片的结构相同，其均包括衬底以及设置在衬底上的磁阻；其中，第二磁阻芯片在基板上的布置角度与第一磁阻芯片不同，使得所述第一磁阻芯片中磁阻的磁感应方向与第二磁阻芯片中磁阻的磁感应方向不同。According to one aspect of the present invention, there is provided a magnetic sensor module, which includes a substrate and a first magnetoresistive chip and a second magnetoresistive chip arranged on the substrate; The structure is the same, and they both include a substrate and a magnetoresistance arranged on the substrate; wherein the arrangement angle of the second magnetoresistive chip on the substrate is different from that of the first magnetoresistive chip, so that the magnetoresistance in the first magnetoresistive chip The magnetic induction direction of is different from the magnetic induction direction of the magnetic resistance in the second magnetoresistive chip.
可选地，所述第一磁阻芯片中磁阻的磁感应方向、第二磁阻芯片中磁阻的磁感应方向完全相反。Optionally, the magnetic induction direction of the magnetic resistance in the first magnetoresistive chip and the magnetic induction direction of the magnetic resistance in the second magnetoresistive chip are completely opposite.
可选地，所述衬底上与磁阻相同的一侧还设置有焊盘，所述第一磁阻芯片、第二磁阻芯片平铺在基板上；所述第一磁阻芯片、第二磁阻芯片的焊盘与基板上设置的对应焊盘焊接在一起；所述第二磁阻芯片相对于第一磁阻芯片旋转180°安装。Optionally, a pad is further provided on the same side of the substrate as the magnetoresistance, and the first magnetoresistive chip and the second magnetoresistive chip are laid out on the substrate; The pads of the two magnetoresistive chips are welded to the corresponding pads provided on the substrate; the second magnetoresistive chip is rotated 180° relative to the first magnetoresistive chip and mounted.
可选地，所述第一磁阻芯片、第二磁阻芯片平铺在基板上，且其衬底远离磁阻的一侧贴装在基板上；所述第二磁阻芯片相对于第一磁阻芯片旋转180°安装。Optionally, the first magnetoresistive chip and the second magnetoresistive chip are laid flat on a substrate, and the side of the substrate away from the magnetoresistance is mounted on the substrate; the second magnetoresistive chip is relatively The magnetoresistive chip is installed with a rotation of 180°.
可选地，所述衬底上与磁阻相同的一侧还设置有焊盘，所述第一磁阻芯片的衬底远离其磁阻的一侧贴装在基板上；所述第二磁阻芯片的焊盘与第一磁阻芯片的焊盘对应焊接在一起；所述第二磁阻芯片相对于第一磁阻芯片旋转180°安装。Optionally, a pad is further provided on the same side of the substrate as the magnetic resistance, and the substrate of the first magnetic resistance chip is mounted on the substrate on the side far away from the magnetic resistance; The pads of the resistance chip and the pads of the first magnetoresistive chip are correspondingly welded together; the second magnetoresistive chip is rotated 180° relative to the first magnetoresistive chip and mounted.
可选地，所述第一磁阻芯片、第二磁阻芯片分别设置有至少两个，至少两个第一磁阻芯片与至少两个第二磁阻芯片构成了惠斯通全桥检测电路。Optionally, there are at least two first magnetoresistive chips and at least two second magnetoresistive chips, and the at least two first magnetoresistive chips and the at least two second magnetoresistive chips form a Wheatstone full bridge detection circuit. .
可选地，所述第一磁阻芯片、第二磁阻芯片上的磁阻至少设置有两个。Optionally, there are at least two magnetoresistances on the first magnetoresistive chip and the second magnetoresistive chip.
可选地，所述第一磁阻芯片与第二磁阻芯片平铺在基板上，且第二磁阻芯片相对于第一磁阻芯片旋转90°安装；所述第一磁阻芯片中磁阻的磁感应方向、第二磁阻芯片中磁阻的磁感应方向相互垂直。Optionally, the first magnetoresistive chip and the second magnetoresistive chip are laid flat on the substrate, and the second magnetoresistive chip is mounted at 90° rotation relative to the first magnetoresistive chip; The magnetic induction direction of the resistance and the magnetic induction direction of the magnetic resistance in the second magnetic resistance chip are perpendicular to each other.
可选地，述第一磁阻芯片、第二磁阻芯片分别设置有两个，其中两个第一磁阻芯片中磁阻的磁感应方向相反，两个第二磁阻芯片中磁阻的磁感应方向相反；Optionally, the first magnetoresistive chip and the second magnetoresistive chip are respectively provided with two, wherein the magnetic induction direction of the magnetoresistance in the two first magnetoresistive chips is opposite, and the magnetic induction of the magnetoresistance in the two second magnetoresistive chips Opposite direction
两个第一磁阻芯片构成了惠斯通检测电路，两个第二磁阻芯片构成了惠斯通检测电路。Two first magnetoresistive chips form a Wheatstone detection circuit, and two second magnetoresistance chips form a Wheatstone detection circuit.
可选地，所述磁传感器模组为角度传感器模组。Optionally, the magnetic sensor module is an angle sensor module.
本实用新型的磁传感器模组，结构相同的磁阻芯片通过不同的方式布置在基板上，可以得到磁感应方向不同的检测机构，可以灵活地满足磁传感器模组的多轴检测或者提高磁传感器模组的灵敏度。In the magnetic sensor module of the present invention, the magnetoresistive chips with the same structure are arranged on the substrate in different ways to obtain detection mechanisms with different magnetic induction directions, which can flexibly meet the multi-axis detection of the magnetic sensor module or improve the magnetic sensor model. The sensitivity of the group.
通过以下参照附图对本实用新型的示例性实施例的详细描述，本实用新型的其它特征及其优点将会变得清楚。Through the following detailed description of exemplary embodiments of the present invention with reference to the accompanying drawings, other features and advantages of the present invention will become clear.
附图说明Description of the drawings
构成说明书的一部分的附图描述了本实用新型的实施例，并且连同说明书一起用于解释本实用新型的原理。The drawings constituting a part of the specification describe the embodiments of the present invention, and together with the specification are used to explain the principle of the present invention.
图1是本实用新型磁传感器模组第一实施方式的结构示意图。FIG. 1 is a schematic structural diagram of the first embodiment of the magnetic sensor module of the present invention.
图2是本实用新型磁传感器模组第二实施方式的结构示意图。Fig. 2 is a schematic structural diagram of a second embodiment of the magnetic sensor module of the present invention.
图3是本实用新型磁传感器模组第三实施方式的结构示意图。3 is a schematic diagram of the third embodiment of the magnetic sensor module of the present invention.
图4是本实用新型磁传感器模组第四实施方式的结构示意图。4 is a schematic diagram of the structure of the fourth embodiment of the magnetic sensor module of the present invention.
图5是本实用新型磁传感器模组第五实施方式的结构示意图。Fig. 5 is a schematic structural diagram of a fifth embodiment of the magnetic sensor module of the present invention.
具体实施方式Detailed ways
现在将参照附图来详细描述本实用新型的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本实用新型的范围。Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that unless specifically stated otherwise, the relative arrangement, numerical expressions and numerical values of the components and steps set forth in these embodiments do not limit the scope of the present invention.
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本实用新型及其应用或使用的任何限制。The following description of at least one exemplary embodiment is actually only illustrative, and in no way serves as any restriction on the utility model and its application or use.
对于相关领域普通技术人员已知的技术和设备可能不作详细讨论，但在适当情况下，所述技术和设备应当被视为说明书的一部分。The technology and equipment known to those of ordinary skill in the relevant fields may not be discussed in detail, but where appropriate, the technology and equipment should be regarded as part of the specification.
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。In all the examples shown and discussed herein, any specific value should be interpreted as merely exemplary and not as limiting. Therefore, other examples of the exemplary embodiment may have different values.
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。It should be noted that similar reference numerals and letters indicate similar items in the following drawings, so once a certain item is defined in one drawing, it does not need to be further discussed in subsequent drawings.
本实用新型提供了一种磁传感器模组，其可以是角度传感器模组、位移传感器模组或者本领域技术人员所熟知的其它类型的传感器模组，在此不再一一列举。现以角度传感器模组为例对本实用新型的技术方案进行详细的描述。The utility model provides a magnetic sensor module, which can be an angle sensor module, a displacement sensor module, or other types of sensor modules well known to those skilled in the art, which will not be listed here. Now take the angle sensor module as an example to describe the technical solution of the present utility model in detail.
参考图1，本实用新型的磁传感器模组，包括基板1以及设置在基板1上的第一磁阻芯片2、第二磁阻芯片3。本实用新型的基板1可以是电路板，第一磁阻芯片2、第二磁阻芯片3通过本领域技术人员所熟知的方式设置在电路板上，并将芯片导通至电路板内部的电路布图中。1, the magnetic sensor module of the present invention includes a substrate 1 and a first magnetoresistive chip 2 and a second magnetoresistive chip 3 arranged on the substrate 1. The substrate 1 of the present invention can be a circuit board. The first magnetoresistive chip 2 and the second magnetoresistive chip 3 are arranged on the circuit board in a manner well known to those skilled in the art, and conduct the chip to the circuit inside the circuit board. Layout.
本实用新型的第一磁阻芯片2、第二磁阻芯片3的结构相同，其可通 过相同的工艺批量生产制得。第一磁阻芯片2、第二磁阻芯片3可以是从同一晶圆上切割下来的，也可以是来自同批次或者不同批次的不同晶圆上。这些芯片的晶圆都是按照相同的工艺进行加工制造，因此其结构是一致的。晶圆上呈矩阵排列的这些芯片中，磁阻的磁感应方向均是相同的，这受限于制造工艺，在此不再具体说明。The first magnetoresistive chip 2 and the second magnetoresistive chip 3 of the present invention have the same structure, and they can be produced in batches through the same process. The first magnetoresistive chip 2 and the second magnetoresistive chip 3 may be cut from the same wafer, or from different wafers of the same batch or different batches. The wafers of these chips are processed and manufactured according to the same process, so their structure is consistent. In these chips arranged in a matrix on the wafer, the magnetic induction direction of the magnetoresistance is the same, which is limited by the manufacturing process, and will not be described in detail here.
参考图1，第一磁阻芯片2包括第一衬底20以及设置在第一衬底20上的第一磁阻22，在第一衬底20上还设置有第一焊盘21，以便于与电路板连接。其中，第一焊盘21设置在第一衬底20上与第一磁阻22相同的一侧。当然，对于本领域的技术人员而言，第一焊盘21也可以设置在第一衬底20上与第一磁阻22相对的一侧。1, the first magnetoresistive chip 2 includes a first substrate 20 and a first magnetoresistor 22 disposed on the first substrate 20, and a first pad 21 is also disposed on the first substrate 20 to facilitate Connect with the circuit board. Wherein, the first pad 21 is arranged on the same side of the first substrate 20 as the first magnetic resistor 22. Of course, for those skilled in the art, the first pad 21 may also be provided on the side of the first substrate 20 opposite to the first magnetic resistance 22.
基于同样的结构，第二磁阻芯片3包括第二衬底30以及设置在第二衬底30上的第二磁阻32，在第二衬底30上还设置有第二焊盘31，以便于与电路板连接。其中，第二焊盘31设置在第二衬底30上与第二磁阻32相同的一侧。当然，对于本领域的技术人员而言，第二焊盘31也可以设置在第二衬底30上与第二磁阻32相对的一侧。Based on the same structure, the second magnetoresistive chip 3 includes a second substrate 30 and a second magnetoresistor 32 provided on the second substrate 30, and a second pad 31 is also provided on the second substrate 30 for To connect with the circuit board. Wherein, the second pad 31 is arranged on the same side of the second substrate 30 as the second magnetic resistance 32. Of course, for those skilled in the art, the second pad 31 may also be provided on the side of the second substrate 30 opposite to the second magnetic resistance 32.
本实用新型的第一磁阻22、第二磁阻32可以采用巨磁阻(GMR)、隧道磁阻(TMR)或者各向异性磁阻(AMR)等。通过采用高灵敏度的磁阻来获得检测的电信号，可以保证检测机构的电学性能。The first magnetoresistance 22 and the second magnetoresistance 32 of the present invention can adopt giant magnetoresistance (GMR), tunnel magnetoresistance (TMR) or anisotropic magnetoresistance (AMR). By using high-sensitivity magnetoresistance to obtain the detected electrical signal, the electrical performance of the detection mechanism can be guaranteed.
第一磁阻芯片2、第二磁阻芯片3在基板1上的布置角度不同，使得安装在基板1上第一磁阻芯片2、第二磁阻芯片3中磁阻的磁感应方向是不同的。The arrangement angles of the first magnetoresistive chip 2 and the second magnetoresistive chip 3 on the substrate 1 are different, so that the magnetic induction directions of the magnetoresistor in the first magnetoresistive chip 2 and the second magnetoresistive chip 3 mounted on the substrate 1 are different .
例如在本实用新型一个具体的实施方式中，第一磁阻芯片2中磁阻的磁感应方向、第二磁阻芯片3中磁阻的磁感应方向完全相反。由于两个磁阻的磁感应方向相反，当其处于共同变化的磁场中，其中一个磁阻的阻值会变大，另一个磁阻的阻值会变小，且二者的变化量相同。这就使得两个芯片中的磁阻可以构成真正的惠斯通电桥，提高了检测的灵敏度。For example, in a specific embodiment of the present invention, the magnetic induction direction of the magnetoresistance in the first magnetoresistive chip 2 and the magnetic induction direction of the magnetoresistance in the second magnetoresistive chip 3 are completely opposite. Since the magnetic induction directions of the two magnetoresistors are opposite, when they are in a common changing magnetic field, the resistance value of one magnetoresistor will increase, the resistance value of the other magnetoresistor will decrease, and the amount of change of the two magnetoresistor will be the same. This allows the magnetoresistance in the two chips to form a real Wheatstone bridge, which improves the sensitivity of detection.
具体地，在图1示出的实施例中，第一磁阻芯片2、第二磁阻芯片3平铺在基板1上的。第一磁阻芯片2中的第一焊盘21与基板1上设置的第三焊盘10对应焊接在一起，第一磁阻芯片2中第一磁阻22的磁感应方向 朝向图示的右方。第二磁阻芯片3中的第二焊盘31与基板1上设置的第四焊盘11对应焊接在一起。在焊接第二磁阻芯片3的时候，需要将其水平旋转180°进行焊接，使得第二磁阻芯片3中第二磁阻32的磁感应方向朝向图示的左方，使得两个芯片中磁阻的磁感应方向完全相反。Specifically, in the embodiment shown in FIG. 1, the first magnetoresistive chip 2 and the second magnetoresistive chip 3 are laid flat on the substrate 1. The first pad 21 in the first magnetoresistive chip 2 and the third pad 10 provided on the substrate 1 are soldered together correspondingly, and the magnetic induction direction of the first magnetoresistor 22 in the first magnetoresistive chip 2 faces the right side of the figure. . The second pad 31 in the second magnetoresistive chip 3 and the fourth pad 11 provided on the substrate 1 are correspondingly welded together. When welding the second magnetoresistive chip 3, you need to rotate it horizontally by 180° for welding, so that the magnetic induction direction of the second magnetoresistor 32 in the second magnetoresistive chip 3 faces the left side of the figure, so that the magnetic The magnetic induction direction of resistance is completely opposite.
在图2示出的实施例中，第一磁阻芯片2、第二磁阻芯片3平铺在基板1上。第一磁阻芯片2中第一衬底远离第一磁阻22的一侧贴装在基板1上，且第一磁阻芯片2中第一磁阻22的磁感应方向朝向图示的右方。第二磁阻芯片3中第二衬底远离第二磁阻32的一侧贴装在基板1上，在贴装第二磁阻芯片3的时候，需要将其相对于第一磁阻芯片2水平旋转180°进行焊接，此时第二磁阻芯片3中第二磁阻32的磁感应方向朝向图示的左方，保证两个芯片中磁阻的磁感应方向完全相反。In the embodiment shown in FIG. 2, the first magnetoresistive chip 2 and the second magnetoresistive chip 3 are laid flat on the substrate 1. The side of the first substrate of the first magnetoresistive chip 2 away from the first magnetoresistor 22 is mounted on the substrate 1, and the magnetic induction direction of the first magnetoresistor 22 in the first magnetoresistive chip 2 faces the right side of the figure. The side of the second substrate of the second magnetoresistive chip 3 away from the second magnetoresistance 32 is mounted on the substrate 1. When the second magnetoresistive chip 3 is mounted, it needs to be opposed to the first magnetoresistive chip 2 Rotate 180° horizontally for welding. At this time, the magnetic induction direction of the second magnetoresistor 32 in the second magnetoresistive chip 3 faces the left as shown in the figure, ensuring that the magnetic induction directions of the magnetoresistor in the two chips are completely opposite.
在图3示出的实施例中，第一磁阻芯片2与第二磁阻芯片3在高度方向上叠在一起。第一磁阻芯片2中第一衬底远离第一磁阻的一侧贴装在基板1上，第一磁阻芯片2中的第一焊盘21、第一磁阻均朝上。第二磁阻芯片3倒置安装，其第二焊盘31与第一磁阻芯片2的第一焊盘21对应焊接在一起。在焊接第二磁阻芯片3的时候，需要将其水平旋转180°进行焊接，使得第二磁阻芯片3中第二磁阻32的磁感应方向朝向图示的左方，保证两个芯片中磁阻的磁感应方向完全相反。In the embodiment shown in FIG. 3, the first magnetoresistive chip 2 and the second magnetoresistive chip 3 are stacked together in the height direction. The side of the first substrate of the first magnetoresistive chip 2 away from the first magnetoresistor is mounted on the substrate 1, and the first pad 21 and the first magnetoresistor of the first magnetoresistive chip 2 are both facing upward. The second magnetoresistive chip 3 is mounted upside down, and its second pad 31 and the first pad 21 of the first magnetoresistive chip 2 are soldered together correspondingly. When welding the second magnetoresistive chip 3, it is necessary to rotate it horizontally by 180° for welding so that the magnetic induction direction of the second magnetoresistor 32 in the second magnetoresistive chip 3 faces the left side of the figure to ensure that the magnetic The magnetic induction direction of resistance is completely opposite.
本实用新型的磁传感器模组，在基板通过两种不同的方式去布置具有相同结构的磁阻传感器芯片，实现了真正的惠斯通电桥检测，提高了磁传感器模组的检测灵敏度。In the magnetic sensor module of the present invention, the magnetoresistive sensor chip with the same structure is arranged on the substrate in two different ways, realizing the detection of a true Wheatstone bridge and improving the detection sensitivity of the magnetic sensor module.
在本实用新型可选的实施方式中，第一磁阻芯片2中的第一磁阻22可以设置有至少两个，例如设置两个。基于相同的结构，第二磁阻芯片3中的第二磁阻32可以设置有至少两个，例如设置两个。这四个磁阻可以构成惠斯通全桥电路。In an optional embodiment of the present invention, there may be at least two first magnetoresistor 22 in the first magnetoresistive chip 2, for example two. Based on the same structure, the second magnetoresistance 32 in the second magnetoresistance chip 3 may be provided with at least two, for example, two. These four magnetic resistances can form a Wheatstone full bridge circuit.
当然，对于本领域的技术人员而言，第一磁阻芯片2也可以设置至少两个，第二磁阻芯片3设置有至少两个，以构成惠斯通全桥电路。Of course, for those skilled in the art, at least two first magnetoresistive chips 2 and at least two second magnetoresistive chips 3 may be provided to form a Wheatstone full bridge circuit.
在本实用新型另一个具体的实施方式中，第一磁阻芯片2中第一磁阻的磁感应方向与第二磁阻芯片3中第二磁阻的磁感应方向相互垂直。例如 第一磁阻芯片2中第一磁阻的磁感应方向朝向X轴正向，第二磁阻芯片3中第二磁阻的磁感应方向朝向Y轴正向。由此通过该两个磁阻芯片构成了两轴检测，以实现对X轴、Y轴的检测。In another specific embodiment of the present invention, the magnetic induction direction of the first magnetic resistor in the first magnetoresistive chip 2 and the magnetic induction direction of the second magnetic resistor in the second magnetoresistive chip 3 are perpendicular to each other. For example, the magnetic induction direction of the first magnetic resistor in the first magnetoresistive chip 2 faces the positive X-axis, and the magnetic induction direction of the second magnetic resistor in the second magnetoresistive chip 3 faces the positive Y-axis. Therefore, two-axis detection is formed by the two magnetoresistive chips, so as to realize the detection of X-axis and Y-axis.
在图4示出的实施例中，第一磁阻芯片4与第二磁阻芯片5平铺在基板1上，第二磁阻芯片5相对于第一磁阻芯片4旋转90°安装，使得第一磁阻芯片4中第一磁阻的磁感应方向朝向图示的右方，例如X轴的正向；第二磁阻芯片5中第二磁阻的感应方向朝向图示的下方，例如Y轴的负向。该磁传感器模组构成了两轴检测机构，配合相应的磁场使得可以通过第一磁阻芯片4可以感应X轴方向的变化，通过第二磁阻芯片5可以感应Y轴方向的变化。In the embodiment shown in FIG. 4, the first magnetoresistive chip 4 and the second magnetoresistive chip 5 are laid flat on the substrate 1, and the second magnetoresistive chip 5 is rotated 90° relative to the first magnetoresistive chip 4, so that The magnetic induction direction of the first magnetoresistance in the first magnetoresistive chip 4 faces the right side of the figure, for example, the positive direction of the X axis; the induction direction of the second magnetoresistance in the second magnetoresistance chip 5 faces the bottom of the figure, for example, Y The negative direction of the axis. The magnetic sensor module constitutes a two-axis detection mechanism, and with the corresponding magnetic field, the first magnetoresistive chip 4 can sense changes in the X-axis direction, and the second magnetoresistive chip 5 can sense changes in the Y-axis direction.
图5示出的实施例与图4所示实施例不同的是：第一磁阻芯片、第二磁阻芯片分别设置有两个，两个第一磁阻芯片构成惠斯通电桥检测电路，两个第二磁阻芯片构成了惠斯通电桥检测电路。两个第一磁阻芯片分别记为第一磁阻芯片a 40、第一磁阻芯片b 41；两个第二磁阻芯片分别记为第二磁阻芯片a 50、第二磁阻芯片b 51。The embodiment shown in Fig. 5 is different from the embodiment shown in Fig. 4 in that there are two first magnetoresistive chips and two second magnetoresistive chips, and the two first magnetoresistive chips constitute a Wheatstone bridge detection circuit. The two second magnetoresistive chips constitute the Wheatstone bridge detection circuit. The two first magnetoresistive chips are respectively marked as the first magnetoresistive chip a 40 and the first magnetoresistive chip b 41; the two second magnetoresistive chips are respectively marked as the second magnetoresistive chip a 50 and the second magnetoresistive chip b 51.
第一磁阻芯片a 40、第一磁阻芯片b 41平行地布置在基板1上，第一磁阻芯片a 40中磁阻的磁感应方向与第一磁阻芯片b 41中磁阻的磁感应方向相反。例如第一磁阻芯片a 40中磁阻的磁感应方向朝向图示的右方，即X轴正向；而第一磁阻芯片b 41中磁阻的磁感应方向朝向图示的左方，即X轴负向。这样两个第一磁阻芯片就构成了真正的惠斯通电桥检测，提高了X轴检测的灵敏度。The first magnetoresistive chip a 40 and the first magnetoresistive chip b 41 are arranged in parallel on the substrate 1. The magnetic induction direction of the magnetoresistance in the first magnetoresistive chip a 40 is the same as the magnetic induction direction of the magnetoresistance in the first magnetoresistive chip b 41. in contrast. For example, the magnetic induction direction of the magnetoresistance in the first magnetoresistive chip a 40 is towards the right of the figure, that is, the positive direction of the X axis; while the magnetic induction direction of the magnetoresistance in the first magnetoresistance chip b 41 is towards the left of the figure, that is X Axis negative. In this way, the two first magnetoresistive chips constitute a real Wheatstone bridge detection, which improves the sensitivity of X-axis detection.
第二磁阻芯片a 50、第二磁阻芯片b 51平行布置，第二磁阻芯片a 50中磁阻的磁感应方向与第二磁阻芯片b 51中磁阻的磁感应方向相反。例如第二磁阻芯片a 50中磁阻的磁感应方向朝向图示的下方，即Y轴负向；而第二磁阻芯片b 51中磁阻的磁感应方向朝向图示的上方，即Y轴正向。这样两个第二磁阻芯片就构成了真正的惠斯通电桥检测，提高了Y轴检测的灵敏度。The second magnetoresistance chip a 50 and the second magnetoresistance chip b 51 are arranged in parallel, and the magnetic induction direction of the magnetoresistance in the second magnetoresistance chip a 50 is opposite to the magnetic induction direction of the magnetoresistance in the second magnetoresistance chip b 51. For example, the magnetic induction direction of the magnetoresistance in the second magnetoresistive chip a 50 faces the downward direction of the figure, that is, the negative direction of the Y axis; while the magnetic induction direction of the magnetoresistance in the second magnetoresistance chip b 51 faces the upward direction of the figure, that is, the Y axis to. In this way, the two second magnetoresistive chips constitute a real Wheatstone bridge detection, which improves the sensitivity of Y-axis detection.
当然，对于本领域的技术人员而言，每个第一磁阻芯片、每个第二磁阻芯片中的磁阻也可以两个或者两个以上，以构成惠斯通全桥检测电路， 在此不再具体说明。Of course, for those skilled in the art, the magnetoresistance in each first magnetoresistive chip and each second magnetoresistive chip can also be two or more to form a Wheatstone full-bridge detection circuit. This will not be explained in detail.
虽然已经通过示例对本实用新型的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上示例仅是为了进行说明，而不是为了限制本实用新型的范围。本领域的技术人员应该理解，可在不脱离本实用新型的范围和精神的情况下，对以上实施例进行修改。本实用新型的范围由所附权利要求来限定。Although some specific embodiments of the present invention have been described in detail through examples, those skilled in the art should understand that the above examples are only for illustration and not for limiting the scope of the present invention. Those skilled in the art should understand that the above embodiments can be modified without departing from the scope and spirit of the present invention. The scope of the present invention is defined by the appended claims.

Claims (10)

  1. 一种磁传感器模组，其特征在于：包括基板以及设置在基板上的第一磁阻芯片、第二磁阻芯片；所述第一磁阻芯片与第二磁阻芯片的结构相同，其均包括衬底以及设置在衬底上的磁阻；其中，第二磁阻芯片在基板上的布置角度与第一磁阻芯片不同，使得所述第一磁阻芯片中磁阻的磁感应方向与第二磁阻芯片中磁阻的磁感应方向不同。A magnetic sensor module, which is characterized in that it comprises a substrate and a first magnetoresistive chip and a second magnetoresistive chip arranged on the substrate; the first magnetoresistive chip and the second magnetoresistive chip have the same structure, and both It includes a substrate and a magnetoresistive arranged on the substrate; wherein the arrangement angle of the second magnetoresistive chip on the substrate is different from that of the first magnetoresistive chip, so that the magnetic induction direction of the magnetoresistive in the first magnetoresistive chip is the same as that of the first magnetoresistive chip. The magnetic induction directions of the magnetic resistance in the two magnetic resistance chips are different.
  2. 根据权利要求1所述的磁传感器模组，其特征在于：所述第一磁阻芯片中磁阻的磁感应方向、第二磁阻芯片中磁阻的磁感应方向完全相反。The magnetic sensor module of claim 1, wherein the magnetic induction direction of the magnetoresistance in the first magnetoresistive chip and the magnetic induction direction of the magnetoresistance in the second magnetoresistive chip are completely opposite.
  3. 根据权利要求2所述的磁传感器模组，其特征在于：所述衬底上与磁阻相同的一侧还设置有焊盘，所述第一磁阻芯片、第二磁阻芯片平铺在基板上；所述第一磁阻芯片、第二磁阻芯片的焊盘与基板上设置的对应焊盘焊接在一起；所述第二磁阻芯片相对于第一磁阻芯片旋转180°安装。The magnetic sensor module according to claim 2, wherein a pad is further provided on the same side of the substrate as the magnetoresistive, and the first and second magnetoresistive chips are laid flat on On the substrate; the pads of the first magnetoresistive chip and the second magnetoresistive chip are welded together with the corresponding pads provided on the substrate; the second magnetoresistive chip is rotated 180° relative to the first magnetoresistive chip and installed.
  4. 根据权利要求2所述的磁传感器模组，其特征在于：所述第一磁阻芯片、第二磁阻芯片平铺在基板上，且其衬底远离磁阻的一侧贴装在基板上；所述第二磁阻芯片相对于第一磁阻芯片旋转180°安装。The magnetic sensor module according to claim 2, wherein the first magnetoresistive chip and the second magnetoresistive chip are laid flat on a substrate, and the side of the substrate away from the magnetoresistance is mounted on the substrate ; The second magnetoresistive chip is rotated 180° relative to the first magnetoresistive chip for installation.
  5. 根据权利要求2所述的磁传感器模组，其特征在于：所述衬底上与磁阻相同的一侧还设置有焊盘，所述第一磁阻芯片的衬底远离其磁阻的一侧贴装在基板上；所述第二磁阻芯片的焊盘与第一磁阻芯片的焊盘对应焊接在一起；所述第二磁阻芯片相对于第一磁阻芯片旋转180°安装。The magnetic sensor module according to claim 2, wherein a pad is further provided on the same side of the substrate as the magnetoresistive, and the substrate of the first magnetoresistive chip is away from one of the magnetoresistive ones. The side mount is mounted on the substrate; the pads of the second magnetoresistive chip and the pads of the first magnetoresistive chip are welded together correspondingly; the second magnetoresistive chip is rotated 180° relative to the first magnetoresistive chip and installed.
  6. 根据权利要求2所述的磁传感器模组，其特征在于：所述第一磁阻芯片、第二磁阻芯片分别设置有至少两个，至少两个第一磁阻芯片与至少两个第二磁阻芯片构成了惠斯通全桥检测电路。The magnetic sensor module according to claim 2, wherein the first magnetoresistive chip and the second magnetoresistive chip are respectively provided with at least two, at least two first magnetoresistive chips and at least two second magnetoresistive chips. The magnetoresistive chip constitutes the Wheatstone full bridge detection circuit.
  7. 根据权利要求2所述的磁传感器模组，其特征在于：所述第一磁阻芯片、第二磁阻芯片上的磁阻至少设置有两个。The magnetic sensor module according to claim 2, wherein there are at least two magnetoresistances on the first magnetoresistive chip and the second magnetoresistive chip.
  8. 根据权利要求1所述的磁传感器模组，其特征在于：所述第一磁阻芯片与第二磁阻芯片平铺在基板上，且第二磁阻芯片相对于第一磁阻芯片旋转90°安装；所述第一磁阻芯片中磁阻的磁感应方向、第二磁阻芯片中磁阻的磁感应方向相互垂直。The magnetic sensor module according to claim 1, wherein the first magnetoresistive chip and the second magnetoresistive chip are laid flat on the substrate, and the second magnetoresistive chip rotates 90 degrees relative to the first magnetoresistive chip. °Installation; the magnetic induction direction of the magnetic resistance in the first magnetoresistive chip and the magnetic induction direction of the magnetic resistance in the second magnetoresistive chip are perpendicular to each other.
  9. 根据权利要求8所述的磁传感器模组，其特征在于：所述第一磁阻芯片、第二磁阻芯片分别设置有两个，其中两个第一磁阻芯片中磁阻的磁感应方向相反，两个第二磁阻芯片中磁阻的磁感应方向相反；8. The magnetic sensor module according to claim 8, wherein the first magnetoresistive chip and the second magnetoresistive chip are respectively provided with two, wherein the magnetic induction direction of the magnetoresistance of the two first magnetoresistive chips is opposite , The magnetic induction directions of the magnetic resistance in the two second magnetic resistance chips are opposite;
    两个第一磁阻芯片构成了惠斯通检测电路，两个第二磁阻芯片构成了惠斯通检测电路。Two first magnetoresistive chips form a Wheatstone detection circuit, and two second magnetoresistance chips form a Wheatstone detection circuit.
  10. 根据权利要求1至9任一项所述的磁传感器模组，其特征在于：所述磁传感器模组为角度传感器模组。9. The magnetic sensor module according to any one of claims 1 to 9, wherein the magnetic sensor module is an angle sensor module.
PCT/CN2019/089142 2019-05-23 2019-05-30 Magnetic sensor module WO2020232735A1 (en)

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