CN205720614U - The magnetic resistance sensor that a kind of magneto-resistor knot is alternately arranged - Google Patents
The magnetic resistance sensor that a kind of magneto-resistor knot is alternately arranged Download PDFInfo
- Publication number
- CN205720614U CN205720614U CN201620278828.8U CN201620278828U CN205720614U CN 205720614 U CN205720614 U CN 205720614U CN 201620278828 U CN201620278828 U CN 201620278828U CN 205720614 U CN205720614 U CN 205720614U
- Authority
- CN
- China
- Prior art keywords
- magneto
- resistor
- layer
- magnetic
- knot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Measuring Magnetic Variables (AREA)
Abstract
This utility model relates to magnetic sensor field, the magnetic resistance sensor that a kind of magneto-resistor knot is alternately arranged, magnetic layer is replaced by tying deposit one bias layer in magneto-resistor, improve the stability of magnetic resistance sensor, simultaneously, owing to eliminating the use of magnetic layer, an equal amount of chip can be placed more magneto-resistor knot, thus improve the utilization rate of chip area, reduce cost, in addition, by alternately arranged for the magneto-resistor knot of different magneto-resistors, overcome the magneto-resistor knot physical size and physical characteristic defect pockety caused because of manufacturing process, improve the concordance of magneto-resistor knot, reduce zero inclined.
Description
Technical field
This utility model relates to magnetic sensor field, particularly to the magnetic resistance sensor that a kind of magneto-resistor knot is alternately arranged.
Background technology
Magnetic resistance sensor, as the device in detection magnetic field, is widely used to the fields such as civilian instrument and meter, Industry Control at present.Compared with Hall effect sensor, magnetic resistance sensor (mainly including AMR sensor, GMR, TMR sensor) has the advantages such as highly sensitive, signal to noise ratio is high, response is fast.
Conventional magnetic resistance sensor at least has the structures such as two magneto-resistors, different magneto-resistor composition half-bridge, full-bridge, quasi-bridge, it is achieved the response to external magnetic field, and exports the voltage signal of simulation.In processing technology, owing to the film characteristics of diverse location is different, causing the coupling between different magneto-resistors bad, in turn result in when not having external magnetic field, sensor output signal is not zero, the most so-called zero inclined；Meanwhile, also can be different due to the sensitivity of different magneto-resistors, cause the linearity of magnetic resistance sensor to decline.
Another shortcoming of magnetic resistance sensor is self to have magnetic hysteresis, has influence on the precision of sensor output signal.In order to reduce magnetic hysteresis, it is necessary to tie one magnetic field of applying in magneto-resistor, and this magnetic field is perpendicular to the sensitive direction of sensor.Conventional way is, on the side of magneto-resistor knot, deposits one layer of magnetic layer, magnetizes magnetic layer, then just create a bias magnetic field near magnetic layer, sensor is arranged to sensitive direction and is perpendicular to this bias magnetic field, i.e. can reach the purpose reducing magnetic hysteresis.
Due to the existence of magnetic layer, the quantity of magneto-resistor knot can be reduced, the size of chip will certainly be increased, increase manufacturing cost；The magnetic layer of deposit is easily subject to the impact of external magnetic field, causes the magnetic field size around magnetic layer unstable, and then has influence on the stability of magnetic resistance sensor；Around magnetic layer, magnetic field can increase along with the distance from magnetic layer and reduce, and magneto-resistor so can be caused to tie Distribution of Magnetic Field uneven, reduce the concordance of magnetic resistance sensor.
Utility model content
The purpose of this utility model is the problem above overcoming prior art to exist, it is provided that the magnetic resistance sensor of a kind of good stability.Replace magnetic layer by tying deposit one bias layer in magneto-resistor, improve the stability of magnetic resistance sensor and the utilization rate of chip area, additionally, by alternately arranged for the magneto-resistor knot of different magneto-resistors, improve the matching degree of different magneto-resistor, thus it is inclined to reduce by zero.
The magneto-resistor that this utility model provides ties multiple magneto-resistors that alternately arranged magnetic resistance sensor includes substrate, is positioned on substrate, and each magneto-resistor has two electric ends, and each electric end comprises two pads connected by wire；
Each magneto-resistor is become by multiple magnetic resistance structures, and the magneto-resistor knot of different magneto-resistors is alternately arranged,
Described magneto-resistor knot includes the Seed Layer being sequentially distributed from bottom to top, pinning layer, nailed layer, sealing coat, free layer and has the bias layer of a bias magnetic field, the described bias magnetic field magnetic direction in free layer position is parallel with the plane at free layer place, the direction of magnetization of nailed layer is parallel with the plane at free layer place, further, described bias magnetic field is vertical at the magnetic direction of free layer position and the direction of magnetization of nailed layer.
Further, the arrangement alternate cycle of the magneto-resistor knot of different magneto-resistors is one or more magneto-resistor knot.
Specifically, the sensitive direction of described magneto-resistor knot is parallel to the direction of magnetization of nailed layer.
Preferably, described pinning layer is made up of antiferromagnetic materials, and described nailed layer is made up of ferrimagnetic material or ferrimagnet.
Preferably, described bias layer is made up of PtMn or IrMn alloy.
Preferably, described free layer is made up of the soft magnetic materials of high magnetic permeability.
Preferably, described sealing coat is made up of nonmagnetic oxide or nonmagnetic metal.
Further, the one or more kinds of combinations during described magnetic resistance sensor is half-bridge structure, full bridge structure, quasi-bridge construction.
This utility model has the advantages that
Compared with prior art, this utility model uses ties deposit bias layer to replace magnetic layer in magneto-resistor, bias layer has the performance of more preferable anti-external magnetic field impact than magnetic layer, the bias magnetic field providing more stable can be tied for magneto-resistor, improve the stability of magnetic resistance sensor, simultaneously as eliminate the use of magnetic layer, an equal amount of chip can be placed more magneto-resistor knot, thus improve the utilization rate of chip area.Tying, for the magneto-resistor caused because of manufacturing process, the problem that Distribution of Magnetic Field is uneven, this utility model, by alternately arranged for the magneto-resistor knot of different magneto-resistors, improves the concordance of magneto-resistor knot, thus improve the matching degree of different magneto-resistor, to reduce by zero inclined.
Accompanying drawing explanation
In order to be illustrated more clearly that the technical solution of the utility model, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in describing below is only embodiments more of the present utility model, for those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is to use the schematic diagram that on sheet, magnetic layer is biased；
Fig. 2 is the schematic diagram using the magneto-resistor of exchange biased composition to tie；
Fig. 3 is to use the top view of the sensor that magnetic layer biasing is constituted on sheet；
Fig. 4 is the top view of the sensor using exchange biased composition；
Fig. 5 is the scattergram of magneto-resistor on the sensor of conventional design；
Fig. 6 is to use magneto-resistor to make friends with for the scattergram of magneto-resistor on the sensor of arrangement architecture composition；
Fig. 7 is the resistance value change curve with externally-applied magnetic field of single magneto-resistor；
Fig. 8 is the structural representation of full bridge structure magnetic resistance sensor；
Fig. 9 is the electrical schematic diagram of full bridge structure magnetic resistance sensor；
Figure 10 is the full bridge structure magnetic resistance sensor change curve with externally-applied magnetic field；
Figure 11 is that another kind of employing magneto-resistor is made friends with for the scattergram of magneto-resistor on the sensor of arrangement architecture composition.
Detailed description of the invention
For making the purpose of this utility model embodiment, technical scheme and advantage clearer, below in conjunction with the accompanying drawing in this utility model embodiment, technical scheme in this utility model embodiment is clearly and completely described, obviously, described embodiment is a part of embodiment of this utility model rather than whole embodiments.
Embodiment one
Fig. 1 is to use the schematic diagram that magnetic layer is biased on sheet, and on two sheets, magnetic layer 101 is distributed in magneto-resistor and ties 102 both sides, and the direction of magnetization of magnetic layer 101 is in figure 103.On the free layer 110 of magneto-resistor knot 102, due to the effect of magnetic layer, there is a bias-field 104 identical with 103 directions.Pinning layer 107 is annealed, and its internal magnetic field direction is alternately arranged, due to exchange-coupling interaction, causes the direction of magnetization of the nailed layer above it to be fixed to 108, and the direction of magnetization of nailed layer is parallel with the sensitive direction 105 that magneto-resistor is tied.Sealing coat 106 is positioned at the centre of nailed layer and free layer, and sealing coat can be made up of nonmagnetic oxide, such as aluminium oxide and magnesium oxide, it is also possible to be made up of nonmagnetic metal, such as copper.Free layer is the material of high magnetic permeability, and its direction of magnetization is affected by external magnetic field.The direction of bias-field 104 is parallel with free layer 110 place plane with the sensitive direction that magneto-resistor is tied, and the direction of bias-field is perpendicular to the sensitive direction of magneto-resistor knot, and the purpose of do so is the magnetic hysteresis reducing free layer 110, and then reduces the magnetic hysteresis of magnetic resistance sensor.
Fig. 3 is to use the top view of the sensor that magnetic layer biasing is constituted on sheet, and in figure, 302 is substrate, and magneto-resistor knot and magnetic layer are all deposited on substrate.Due to magnetic layer 304 meeting footprint area, thus limit the number of magneto-resistor knot 303, reduce the utilization rate of chip area.
In order to improve the utilization rate of chip area, and reducing the high cost brought due to magnetic layer on sheet, this utility model uses exchange biased method, provides the bias-field being perpendicular to sensitive direction for free layer.The magneto-resistor knot such as 201 in Fig. 2 constituted by exchange biased method, it is made up of Seed Layer 202, pinning layer 203, nailed layer 204, sealing coat 206, free layer 207, bias layer 209.Bias layer 209 is anti-iron material, and after annealing, its internal magnetization is distributed in periodic arrangement.Due to magnetic-coupled effect, existing for a bias-field 208 on free layer 207, bias-field direction is identical with bias layer 209 lower surface magnetic direction.The direction of magnetization of nailed layer is 205, and the sensitive direction of magneto-resistor knot is 210.The direction of bias-field 208 is vertical and all parallel with free layer 207 place plane with magneto-resistor knot sensitive direction, and this set also can reach to reduce the purpose of the magnetic hysteresis of free layer 207.By changing the thickness of bias layer 209, thus it is possible to vary act on the size of bias-field on free layer 207, and then the sensitivity of regulation magneto-resistor knot.
Fig. 4 is the top view of the sensor using exchange biased composition.In figure, 402 is substrate, and magneto-resistor knot is deposited on substrate.Owing to need not deposit magnetic layer on substrate, thus on identical substrate, more magneto-resistor knot 403 can be placed.This, to reducing cost, reduces power consumption, and it is useful for increasing signal to noise ratio.
Embodiment two
In order to make sensor, needing plural magneto-resistor, the magneto-resistor being typically different is positioned at different positions, as shown in Figure 5.Fig. 5 has two magneto-resistors, is 502 and 509 respectively.Magneto-resistor 502 comprises 40 magneto-resistor knots 501 being connected in series, and magneto-resistor 502 has two electric ends, each electric end to have two pads.Pad 503 and pad 504 are electric ends of magneto-resistor 502, and wire 505 connects pad 503 and 504；Pad 506 and pad 507 are that another of magneto-resistor 502 is electrically held, and pad 506 and pad 507 are also connected by wire.The structure of magneto-resistor 509 is identical with the structure of magneto-resistor 508, does not repeats them here.Owing to magneto-resistor 508 and magneto-resistor 509 are positioned at different positions, in quasiconductor and the micro electronmechanical course of processing, easily cause the difference of physical arrangement, cause the difference of the performance of different magneto-resistor.By magneto-resistor composition sensors different for performance, the decline of sensor performance will necessarily be caused due to matching problem.
The utility model proposes the structure that a kind of magneto-resistor knot is alternately arranged, as shown in Figure 6, figure has two magneto-resistors 614 and 615.Magneto-resistor 614 comprises 40 magneto-resistor knots 603 being connected in series, and magneto-resistor 614 has two electric ends, each electric end to have two pads.Pad 604 and pad 605 are electric ends of magneto-resistor 614, and wire 606 connects pad 604 and pad 605；Pad 607 and pad 608 are that another of magneto-resistor 614 is electrically held, and equally, the two pad is also connected by wire.The structure of magneto-resistor 615 is identical with the structure of magneto-resistor 614, does not repeats them here.Owing to the magneto-resistor of two magneto-resistors is tied alternately arranged, the discordance of two magneto-resistors brought due to technique can be reduced largely.
Fig. 7 is the resistance value change curve with external magnetic field of magneto-resistor, if the concordance of technique is bad, the magneto-resistor curve of two positions arises that deviation, such as curve 701 and curve 705 in figure.The response of magneto-resistor external magnetic field can be write as:
R=R0+ S × H formula (1)
Wherein R0Being external magnetic field resistance value of magneto-resistor when being 0, the point 704 in homologous thread 701 and the point 708 in curve 705, S is the sensitivity of magneto-resistor, and H is externally-applied magnetic field.Due to the homogeneity question in coating process and etching technics, resistance value and the sensitivity of the magneto-resistor knot of diverse location can there are differences.Particularly resistance value, the plastics thickness control being limited in the course of processing, the film thickness of different positions is difficult to accomplish unanimously.If but the magneto-resistor knot of different magneto-resistors is arranged alternately, then can reduce resistors match problem largely.
Embodiment three
The magnetic resistance sensor of the full bridge structure that Fig. 8 is made up of four magneto-resistors, in figure, substrate 801 is identical with substrate in Fig. 6 601, and substrate 802 is planar substrate 801 to be revolved turnback and obtains.The magnetic resistance sensor of full bridge structure is made up of magneto-resistor 805,806,807,808, and wherein magneto-resistor 805 and 807 is positioned on substrate 801, and their sensitive direction is 803, and magneto-resistor 806 and 808 is positioned at substrate 802, and their sensitive direction is 804.The magneto-resistor 805 position on substrate 801 is identical with the magneto-resistor 808 position on substrate 802, and the magneto-resistor 807 position on substrate 801 is identical with the magneto-resistor 806 position on substrate 802.Realized the interconnection of four magneto-resistors by bonding line 809, then correspondence pad is connected to Vcc, V+, V-, GND end, the magnetic resistance sensor that full-bridge connects can be realized.
Fig. 9 is exactly the electrical schematic diagram of full bridge structure sensor in Fig. 8, magneto-resistor 805 is identical with the sensitive direction of magneto-resistor 807, magneto-resistor 806 is identical with the sensitive direction of magneto-resistor 808, and, the sensitive direction of magneto-resistor 805 and magneto-resistor 807 is contrary with the sensitive direction of magneto-resistor 806 and magneto-resistor 808, sensor input/output port has Vcc, GND, V+ and V-, sensor to be output as:
Vout=V+-V-formula (2)
Lower surface analysis mates bad meeting due to magneto-resistor and exports the impact brought to sensor.
Assume magneto-resistor 805 be R1, magneto-resistor 806 be R2, magneto-resistor 807 be R3, magneto-resistor 808R4, according to conventional way, four resistance are the most different, and resistance R1 with R3 manufactured according to this utility model is identical, R2 with R4 is identical.Then have:
It can be seen that the magneto-resistor knot alternatively distributed magnetic resistance sensor output signal when not having externally-applied magnetic field is from table aboveHere it is zero partially by this signal definition, inclined compared to the zero of traditional structureIt is easier to be controlled.
Figure 10 is the output voltage change curve with externally-applied magnetic field of full bridge structure sensor, this utility model provides a kind of low zero inclined magnetic resistance sensor, namely can effectively reduce the null field output voltage 1001 in figure, and obtain sensor output maximum 1002 and the minima 1003 of symmetry.
Embodiment four
Figure 11 is another embodiment, and in this embodiment, the resistance junction alternate cycle of magneto-resistor 1102 and magneto-resistor 1103 is magneto-resistor knot, i.e. tie with the magneto-resistor of magneto-resistor 1,102 1101 adjacent be the magneto-resistor knot 1104 of magneto-resistor 1103.In the embodiment in fig 6, alternate cycle is two magneto-resistor knots.If there being demand, alternate cycle can be set to any number.
Embodiment five
Magnetic resistance sensor of the present utility model can be half-bridge structure, full bridge structure, quasi-bridge construction, it is also possible to is the combination of any two or three in half-bridge structure, full bridge structure, quasi-bridge construction.
Based on the embodiment in this utility model, all other embodiments that those of ordinary skill in the art are obtained under not making creative work premise, broadly fall into the scope of this utility model protection.Although this utility model is illustrated with regard to preferred implementation and has been described, it is understood by those skilled in the art that without departing from claim limited range of the present utility model, this utility model can be carried out variations and modifications.
Claims (8)
1. the magnetic resistance sensor that magneto-resistor knot is alternately arranged, including substrate, is positioned at substrate
On multiple magneto-resistors, each magneto-resistor has two electric ends, and each electric end comprises two
The pad connected by wire, it is characterised in that
Each magneto-resistor is become by multiple magnetic resistance structures, and the magneto-resistor of different magneto-resistors is made friends with for row
Row,
Seed Layer that described magneto-resistor knot includes being sequentially distributed from bottom to top, pinning layer, pinned
Layer, sealing coat, free layer and there is the bias layer of a bias magnetic field, described bias magnetic field from
Parallel with the plane at free layer place by the magnetic direction of layer position, the magnetization of nailed layer
Direction is parallel with the plane at free layer place, and, described bias magnetic field is in place in free layer institute
The magnetic direction put is vertical with the direction of magnetization of nailed layer.
The magnetic resistance sensor that magneto-resistor the most according to claim 1 knot is alternately arranged, its
Being characterised by, the arrangement alternate cycle of the magneto-resistor knot of different magneto-resistors is one or more magnetic
Resistance junction.
The magnetic resistance sensor that magneto-resistor the most according to claim 1 knot is alternately arranged, its
Being characterised by, the sensitive direction of described magneto-resistor knot is parallel to the direction of magnetization of nailed layer.
4. tie alternately arranged magnetoelectricity according to the magneto-resistor described in any one in claim 1-3
Resistance sensor, it is characterised in that described pinning layer is made up of antiferromagnetic materials, described is followed closely
Prick layer to be made up of ferrimagnetic material or ferrimagnet.
5. tie alternately arranged magnetoelectricity according to the magneto-resistor described in any one in claim 1-3
Resistance sensor, it is characterised in that described bias layer is made up of PtMn or IrMn alloy.
6. tie alternately arranged magnetoelectricity according to the magneto-resistor described in any one in claim 1-3
Resistance sensor, it is characterised in that described free layer is made up of the soft magnetic materials of high magnetic permeability.
7. tie alternately arranged magnetoelectricity according to the magneto-resistor described in any one in claim 1-3
Resistance sensor, it is characterised in that described sealing coat is by nonmagnetic oxide or nonmagnetic metal structure
Become.
The magnetic resistance sensor that magneto-resistor the most according to claim 1 knot is alternately arranged, its
Being characterised by, described magnetic resistance sensor is in half-bridge structure, full bridge structure, quasi-bridge construction
One or more kinds of combinations.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620278828.8U CN205720614U (en) | 2016-04-06 | 2016-04-06 | The magnetic resistance sensor that a kind of magneto-resistor knot is alternately arranged |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620278828.8U CN205720614U (en) | 2016-04-06 | 2016-04-06 | The magnetic resistance sensor that a kind of magneto-resistor knot is alternately arranged |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205720614U true CN205720614U (en) | 2016-11-23 |
Family
ID=57311697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620278828.8U Active CN205720614U (en) | 2016-04-06 | 2016-04-06 | The magnetic resistance sensor that a kind of magneto-resistor knot is alternately arranged |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205720614U (en) |
-
2016
- 2016-04-06 CN CN201620278828.8U patent/CN205720614U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102590768B (en) | Magneto-resistance magnetic field gradient sensor | |
| US9722175B2 (en) | Single-chip bridge-type magnetic field sensor and preparation method thereof | |
| US10060941B2 (en) | Magnetoresistive gear tooth sensor | |
| WO2015058632A1 (en) | Push-pull bridge-type magnetic sensor for high-intensity magnetic fields | |
| CN103645449B (en) | A kind of single-chip for high-intensity magnetic field refers to bridge type magnetic sensor | |
| JP6420665B2 (en) | Magnetoresistive sensor for measuring magnetic fields | |
| CN102621504B (en) | Monolithic reference full bridge magnetic field sensor | |
| EP3088907B1 (en) | High-sensitivity push-pull bridge magnetic sensor | |
| CN202421483U (en) | Single-chip push-pull bridge-type magnetic field sensor | |
| WO2012116660A1 (en) | Individually packaged magnetoresistance angle sensor | |
| WO2014190907A1 (en) | Single-chip bridge-type magnetic field sensor | |
| CN202210144U (en) | Single-chip reference full-bridge magnetic field sensor | |
| US20190120916A1 (en) | Anisotropic magnetoresistive (amr) sensor without set and reset device | |
| JP2017502298A5 (en) | ||
| CN203658561U (en) | Single-chip reference bridge type magnetic sensor for high-intensity magnetic field | |
| CN203337808U (en) | Single-chip bridge-type magnetic field sensor | |
| CN102721427A (en) | Thin-film magnetoresistive sensor element and thin-film magnetoresistive bridge | |
| CN203587786U (en) | Push-pull bridge type magnetic sensor for high-intensity magnetic field | |
| CN202794487U (en) | Magneto-resistor magnetic field gradient sensor | |
| CN205720614U (en) | The magnetic resistance sensor that a kind of magneto-resistor knot is alternately arranged | |
| CN202994175U (en) | Thin-film magneto-resistive sensor element, thin-film magneto-resistive half bridge, and thin-film magneto-resistive full bridge | |
| CN206583459U (en) | Linear transducer | |
| JP6701047B2 (en) | Magnetic sensor and method of manufacturing magnetic sensor | |
| CN207181652U (en) | A kind of single-chip highly sensitive magnetic resistive linearity sensor | |
| CN110320482A (en) | A kind of TMR full-bridge Magnetic Sensor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |