CN207181652U - A kind of single-chip highly sensitive magnetic resistive linearity sensor - Google Patents
A kind of single-chip highly sensitive magnetic resistive linearity sensor Download PDFInfo
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- CN207181652U CN207181652U CN201720484553.8U CN201720484553U CN207181652U CN 207181652 U CN207181652 U CN 207181652U CN 201720484553 U CN201720484553 U CN 201720484553U CN 207181652 U CN207181652 U CN 207181652U
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Abstract
The utility model discloses a kind of single-chip highly sensitive magnetic resistive linearity sensor, including the substrate on X Y planes；Soft magnetism flux concentrator array on substrate, soft magnetism flux concentrator array include multiple soft magnetism flux concentrators, and formed with gap between two neighboring soft magnetism flux concentrator；And+the X above or below soft magnetism flux concentrator array, X magneto-resistor sensing unit arrays, + the X, X magneto-resistors sensing unit array includes the+X between gap location respectively, X magneto-resistor sensing units, + X, X magneto-resistor sensing unit arrays, which are electrically connected, is connected into push-pull type X-axis magnetic resistance sensor, and the magneto-resistor sensing unit arranged adjacent with same magnetic field sensitive direction, the magneto-resistor sensing unit is all MTJ magnetoresistance cells, and there is identical magnetic multi-layer film structure, using the program control magnetic anneal of laser, laser facula scans magneto-resistor sensing unit array along gap long axis direction.The utility model has the advantages of small size, high accuracy, low-power consumption.
Description
Technical field
Magnetic sensor field is the utility model is related to, more particularly to a kind of single-chip highly sensitive magnetic resistive linearity sensing
Device.
Background technology
High sensitivity uniaxial magnetic resistive linearity sensor, is amplified, simultaneously using soft magnetism flux concentrator external magnetic field
Use push-pull type bridge structure to strengthen signal output, be high sensitivity linear magnetoresistance sensor and low noise linear magnetoresistance
The basis of Sensor Design.
For TMR magnetic resistance sensors, generally use passes the magneto-resistor that one has single magnetic-field-sensitive direction such as X-axis
Feel unit section, overturn 180 degree, pushing away the section of magneto-resistor sensing unit and drawing magneto-resistor sensing unit and cut for X-axis is obtained with this
Piece, it the advantage is that, preparation method is simple, it is only necessary to a section, and a corresponding ferromagnetic reference structure, and shortcoming exists
It is accurately positioned, is added due to the survey of sensor caused by operational error in the same plane in, it is necessary to operate 2 sections
The possibility of accuracy of measurement loss.
Using the design of the ferromagnetic reference of multi-layer film structure, by changing the ferromagnetic layer with inverse ferric magnetosphere coupling interaction
With metal spacing layer form plural layers the number of plies, one of them is odd-level, another be even level method, Ke Yishi
Now pushing away for opposite ferromagnetic reference and draws the manufacture of magneto-resistor sensing unit at magneto-resistor sensing unit, itself the disadvantage is that, due to
Need to introduce at least two kinds of multi-layer film structures when depositing plural layers, add the complexity of micro fabrication.
Laser program-controlled heating magnetic is used as number of patent application discloses one kind for CN201610821610.7 Chinese patent
The method of field annealing is scanned to magneto-resistor sensing unit to realize, quickly heats inverse ferric magnetosphere to more than blocking temperature, together
When in cooling procedure can along any direction apply magnetic field, can scan one by one, even piecewise scanning realize magneto-resistor sense
The orientation in the magnetic-field-sensitive direction of unit in either direction, the twin shaft magneto-resistor in single section can be realized using this method
Four kinds of sensing unit have the manufacture of orthogonally oriented magneto-resistor sensing unit and its array, so as to overcome upset section
The problem of the micro fabrication complexity of a variety of magnetic multi-layer film structures is accurately positioned and deposited, and single-chip twin shaft magnetic can be realized
The batch micro operations of resistance angular transducer.
The content of the invention
The utility model is in order to solve the above-mentioned technical problem, it is proposed that a kind of single-chip highly sensitive magnetic resistive linearity sensing
Device, the write operation to magneto-resistor sensing unit magnetic-field-sensitive direction is realized by way of laser auxiliary heating magnetic-field annealing.
The utility model proposes a kind of single-chip highly sensitive magnetic resistive linearity sensor, including：
Substrate on X-Y plane；
Magnetic flux concentrator array on the substrate, the soft magnetism flux concentrator array lead to including multiple soft magnetisms
Concentrator is measured, and it is along the Y direction, described formed with gap, the major axis in the gap between two neighboring soft magnetism flux concentrator
The short axle in gap is along the X direction；And
+ X magneto-resistors sensing unit array and-X magneto-resistors above or below the soft magnetism flux concentrator array
The sensing unit array ,+X magneto-resistors sensing unit array ,-X magneto-resistors sensing unit array include between described soft respectively
+ X magneto-resistors the sensing unit ,-X magneto-resistor sensing units of the gap location of magnetic flux concentrator, wherein ,+X magneto-resistors the sensing
The magnetic-field-sensitive direction of cell array and the-X magneto-resistors sensing unit array is respectively along+X ,-the X ,+X and-X magneto-resistors
Along the Y direction ,+X magneto-resistors the sensing unit array is electrically connected is connected into X push arms to the major axis of sensing unit array ,-X the magnetoelectricities
Resistance sensing unit array, which is electrically connected, to be connected into X and draws bow, and the X push arms and the X draw bow to be electrically connected and be connected into push-pull type X-axis magneto-resistor sensing
Device,
Magneto-resistor sensing unit arranged adjacent with same magnetic field sensitive direction, the magneto-resistor sensing unit have phase
Same magnetic multi-layer film structure, the magnetic multi-layer film structure include Seed Layer, lower electrode layer, inverse ferric magnetosphere, nail from bottom to top
Prick layer, Ru, reference layer, nonmagnetic intermediate layer, free layer, magnetic bias layer, upper electrode layer, passivation layer structure or wrap from bottom to top
Include Seed Layer, lower electrode layer, inverse ferric magnetosphere, reference layer, nonmagnetic intermediate layer, free layer, magnetic bias layer, upper electrode layer, passivation layer
Structure, the nonmagnetic intermediate layer is Al2O3Or MgO, the magnetic bias layer are hard magnetic layer, another inverse ferric magnetosphere or synthesis
Inverse ferric magnetosphere structure, the passivation layer are the material to laser-light transparent, using the program control magnetic anneal of laser, between laser facula edge is described
The major axis Y-direction of gap scans the magneto-resistor sensing unit array, and the magnetic field for amplifying the soft magnetism flux concentrator array causes
The X of the inverse ferric magnetosphere is to external magnetic field laser annealing.
Preferably, the magnetic-field-sensitive side of+X magneto-resistors sensing unit array and the-X magneto-resistors sensing unit array
To edge+X, -X direction respectively, along the Y direction, the magneto-resistor senses the major axis of+X and-X magneto-resistor sensing unit arrays
Unit is all MTJ magnetoresistance cells, and the MTJ magnetoresistance cells are shaped as ellipse, or middle part is rectangle and is located at respectively
The both ends of middle part opposite sides are the shape of triangle or sector.
Further, the soft magnetism flux concentrator is strip, and the long axis direction of the soft magnetism flux concentrator is along Y
Direction, along the X direction, length is 500-5000 μm to short-axis direction, and width is 500-5000 μm, and thickness is 5-30 μm, described
Gap width is 6.5-10 μm, and the soft magnetism flux concentrator is High-magnetic permeability soft magnetic alloy, the High-magnetic permeability soft magnetic alloy
Include the one or more in Fe, Co, Ni element.
Further, X-direction external magnetic field magnetic field intensity is Hex, and the magneto-resistor sensing unit has identical X-direction magnetic
Field intensity Brx, the field gain factor are Brx/ (μ0* Hex), wherein μ0For space permeability, and the field gain factor 1-10 it
Between, the soft magnetism flux concentrator array has identical gap, increases the width of the soft magnetism flux concentrator at both ends and makes
The gap obtained at both ends is identical with the field gain factor in the centrally located gap, in other words, the soft magnetism at both ends
The width of flux concentrator is more than the width of the soft magnetism flux concentrator between the soft magnetism flux concentrator at the both ends.
Further, the soft magnetism flux concentrator array includes N number of soft magnetism flux concentrator, and wherein N is more than 0
Integer,
When N is odd number, the magneto-resistor sensing unit array is distributed in（N+1）/ 2 soft magnetism flux concentrators
In the N-1 gaps of both sides；
When N is even number, the magneto-resistor sensing unit array is distributed in the 1st to N/2, and N/2+1 is to n-th
Gap location between soft magnetism flux concentrator.
Further, the push-pull type magneto-resistor linear transducer is half-bridge, full-bridge or quasi- bridge structure.
Further, the gap distribution of the soft magnetism flux concentrator has single file magneto-resistor sensing unit；It is or described soft
The gap distribution of magnetic flux concentrator has duplicate rows magneto-resistor sensing unit, and equidistantly distributes between the soft magnetism flux concentrator
The both sides of gap center line.
Further ,+X magneto-resistors the sensing unit array and the-X magneto-resistors sensing unit array are distributed in described
The both sides of the X-direction center line of soft magnetism flux concentrator array or the both sides of Y-direction center line.
Further ,+X magneto-resistors the sensing unit of two push arms of full composition of the push-pull type magneto-resistor sensing
Two-X resistance sensing unit arrays drawn bow of array and composition are spatially separating respectively or spatial mixing, the magneto-resistor
The magneto-resistor sensing unit series, parallel that sensing unit array is included or connection in series-parallel are into both ends mouth structure.
Further, institute's passivation layer is Ultra-Violet Laser transparent material or infrared laser transparent material, and the Ultra-Violet Laser is saturating
Bright material includes BCB, Si3N4、Al2O3、HfO2、AlF3、GdF3、LaF3、MgF2、Sc2O3、HfO2、SiO2, the infrared laser is saturating
Bright material includes diamond-like carbon film, MgO, SiN, SiC, AlF3、MgF2、SiO2、Al2O3、ThF4、ZnS、ZnSe、ZrO2、HfO2、
TiO2、Ta2O7、Si、Ge。
Further, the passivation layer surface covers one layer of ARC.
The utility model compared with prior art, has the advantages of small size, high accuracy, low-power consumption.
Brief description of the drawings
Fig. 1 is single-chip high sensitivity linear magnetoresistance sensor structure figure；
Fig. 2 is soft magnetism flux concentrator array and the magneto-resistor sensing unit array location drawing；
Fig. 3 is soft magnetism flux concentrator magneto-resistor sensing unit opening position field gain figure under external magnetic field；
Fig. 4 is MTJ magneto-resistor sensing unit multi-layer film structure figures；
Fig. 5（a1）, Fig. 5（a2）, Fig. 5（a3）And Fig. 5（b1）, Fig. 5（b2）, Fig. 5（b3）Respectively illustrate in Fig. 4 at A
The partial enlarged drawing of adoptable six kinds of different situations；
Fig. 6 a, 6b are MTJ magneto-resistor sensing unit shape graphs；
Fig. 7 is push-pull type magnetic resistance sensor full bridge structure figure；
Fig. 8 is the first arrangement figure of+X and-X magneto-resistors sensing unit array and flux concentrator；
Fig. 9 is second of arrangement figure of+X and-X magneto-resistors sensing unit array and flux concentrator；
Figure 10 is the third arrangement figure of+X and-X magneto-resistors sensing unit array and flux concentrator；
Figure 11 is the 4th kind of arrangement figure of+X and-X magneto-resistors sensing unit array and flux concentrator；
Figure 12 is the first device arrangement figure of+X and-X magneto-resistors sensing unit duplicate rows array and flux concentrator；
Figure 13 is second of arrangement figure of+X and-X magneto-resistors sensing unit duplicate rows array and flux concentrator；
Figure 14 is the Typical laser magnetic anneal scan mode of+X and-X magneto-resistor sensing unit arrays.
Embodiment
, below will be to embodiment in order to illustrate more clearly of the utility model embodiment or technical scheme of the prior art
Or the required accompanying drawing used is briefly described in description of the prior art, it should be apparent that, drawings in the following description are only
It is some embodiments of the utility model, for those of ordinary skill in the art, is not paying the premise of creative work
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is single-chip high sensitivity linear magnetoresistance sensor structure figure, including：
Substrate 1 on X-Y plane；
Soft magnetism flux concentrator array 2 on substrate 1, soft magnetism flux concentrator include N number of strip soft magnetism flux
Concentrator 21,22 ..., 2N, and two neighboring soft magnetism flux concentrator 2i, 2（i+1）Corresponding to form a gap, wherein i is
Positive integer less than N, along the Y direction, the short axle in the gap is along the X direction for the major axis in the gap；And
Magnetic-field-sensitive direction is respectively along+X and-X+X magneto-resistors sensing unit array 3 and-X magneto-resistor sensing unit arrays
4 ,+X magneto-resistors the sensing unit array 3 includes+X magneto-resistors sensing unit 31,32 ..., 3j ..., the 3M ,-X magneto-resistors
Sensing unit array 4 includes-X magneto-resistors sensing unit 41,42 ..., and 4j ..., 4M, wherein j are the positive integer less than M.Described+
X magneto-resistors sensing unit ,-X magneto-resistors sensing unit are located in the gap that soft magnetism flux concentrator array 2 is formed respectively, institute
State+X, be full bridge structure in-X magneto-resistor sensing unit arrays are electrically connected into+X push arms 5 and-X draws bow 6, Fig. 1, include two
Individual+X push arms 51 and 52, and two-X draw bow 61 and 62, the push arm 5 and draw bow and 6 are electrically connected and are connected into push-pull type X-axis magneto-resistor biography
Sensor 7.
Fig. 2 is the location diagram of magneto-resistor sensing unit and soft magnetism flux concentrator in external magnetic field, and+X magneto-resistors pass
Sense cell array 3 and-X magneto-resistors sensing unit array 4 are located above or below soft magnetism flux concentrator array 2, and between
The gap location of two neighboring soft magnetism flux concentrator, under external magnetic field Hex effects, X at magneto-resistor sensing unit is to magnetic strength
Intensity is Brx, then the field gain factor=Brx/ (μ0* Hex), wherein μ0For space permeability, and the field gain factor is in 1-10
Between, distribution curve is as shown in figure 3, the soft magnetism flux concentrator array has identical gap, all magneto-resistor sensing lists
Member has the identical field gain factor.Increase the width of the soft magnetism flux concentrator at both ends to cause the gap at both ends
It is identical with the field gain factor in the centrally located gap.
The soft magnetism flux concentrator is strip, and its major axis and short axle are respectively along Y and X-direction, length 500-5000
μm, width is 500-5000 μm, and thickness is 5-30 μm, and the gap width is 6.5-10 μm, and the soft magnetism flux concentrator
For High-magnetic permeability soft magnetic alloy, the High-magnetic permeability soft magnetic alloy includes the one or more in Fe, Co, Ni element.
Fig. 4 is magneto-resistor sensing unit magnetic multi-layer film structure schematic diagram, reference picture 5（a1）- Fig. 5（a3）And Fig. 5
（b1）To Fig. 5（b3）Shown, magneto-resistor sensing unit is MTJ cell, including upper electrode 91 and lower electrode 82, and seed
Layer 81, in addition, also including ferromagnetic reference 86, non-magnetic separation layer 87 and ferromagnetic free layer 88, non-magnetic separation layer is Al2O3Or
Person MgO.Ferromagnetic reference 87 and the magnetization side that ferromagnetic free layer 88 is the orthogonal configuration, wherein ferromagnetic reference 86 of the direction of magnetization
Determine there are two kinds of exchange-coupled structures to by the exchange-coupling interaction with an inverse ferric magnetosphere 83, one is inverse ferric magnetosphere 83/
The exchange-coupling interaction of pinning layer 84/Ru/ ferromagnetic references, the wherein direction of magnetization of pinning layer 84 by by inverse ferric magnetosphere 83 come
Determine, pinning layer 84 is with the direction of magnetization of ferromagnetic reference 86 on the contrary, another structure is the direct and ferromagnetic ginseng of inverse ferric magnetosphere 83
The direct-coupling of layer 86 is examined, its direction of magnetization is determined by 83.The direction of magnetization of ferromagnetic free layer 88 determines by three kinds of modes, first
For Fig. 5（a1）The direct-coupling of shown another inverse ferric magnetosphere 89, second is Fig. 5（a2）It is shown by inverse ferric magnetosphere/another
The spin-exchange-coupled of pinning layer 89/Ru/ ferromagnetic free layers 88 realizes that the 3rd is Fig. 5（a3）The shown magnetic field by hard magnetic layer 94
Bias to realize, under three circumstances, the direction of magnetization of inverse ferric magnetosphere 89 and hard magnetic layer 94 is each perpendicular to inverse ferric magnetosphere 83, with
This is orthogonal come gain freedom layer and the ferromagnetic reference direction of magnetization.Therefore free layer pinning mode has three kinds of modes, reference layer
There is two ways, therefore, one shares 6 kinds of combinations.
Institute's passivation layer is Ultra-Violet Laser transparent material, including BCB, Si3N4、Al2O3、HfO2、AlF3、GdF3、LaF3、MgF2、
Sc2O3、HfO2、SiO2Or be infrared laser transparent material, including diamond-like carbon film, MgO, SiN, SiC, AlF3、MgF2、
SiO2、Al2O3、ThF4、ZnS、ZnSe、ZrO2、HfO2、TiO2、Ta2O7、Si、Ge.The passivation layer surface adds anti-reflective coating
Layer.
+ X magneto-resistors sensing unit and-X magneto-resistors sensing unit can be MTJ magneto-resistor sensing units.Fig. 6 is MTJ magnetoelectricities
Sensing unit shape graph is hindered, there are two kinds of shapes, one of which is elliptical shape；Another is that middle part is rectangle and is located at respectively
The both ends of middle part opposite sides are the shape of triangle or sector, inclined by the shape anisotropy free layer direction of magnetization
To long axis direction, so as to vertical with along the pinned layer magnetization direction of short-axis direction.
The push arm and draw bow and can connect into full-bridge, half-bridge or quasi- bridge.Fig. 7 shows that magneto-resistor full bridge structure is illustrated
Figure.
Fig. 8 and Fig. 9 is respectively that the number N that soft magnetism flux concentrator array includes soft magnetism flux concentrator is odd number, even number
When, the arrangement figure of magneto-resistor sensing unit.When the number of soft magnetism flux concentrator is odd number, magneto-resistor sensing unit is distributed in
The（N+1）In the gap of/2 soft magnetism flux concentrator both sides, as shown in figure 8, in other words, a line is corresponded to respectively in each gap
Magneto-resistor sensing unit.When the number of soft magnetism flux concentrator is even number, magneto-resistor sensing unit is distributed in the 1st to N/2,
And N/2+1 is to the gap location between n-th soft magnetism flux concentrator, as shown in figure 9, in other words, except most middle gap
（That is, the gap being formed between N/2 and the N/2+1 soft magnetism flux concentrator）Outside, other gaps correspond to a line magnetic respectively
Resistance sensing unit.
Fig. 8-11 is four kinds of arrangement modes for recommending magneto-resistor sensing unit array.In Fig. 8 and Fig. 9, magneto-resistor sensing is pushed away
Cell array 103 and 104, magneto-resistor sensing unit array 105 and 106 is drawn, be respectively relative to the Y of soft magnetism flux concentrator array
Shaft centre line 100 is symmetrical, in addition, the magneto-resistor sensing unit array of identical type such as 103 and 104,105 and 106 difference phases
It is symmetrical for X-axis center line 101.Then it is to push away magneto-resistor sensing unit array 103 and 104 in Figure 10, it is single with drawing magneto-resistor sensing
It is symmetrical that element array 105 and 106 is respectively relative to X-axis center line, and identical two pushes away magneto-resistor sensing unit 103 and 104, with
And between drawing magneto-resistor sensing unit array 105 and 106, then it is symmetrical to be respectively relative to Y center lines.Figure 11 is the third arrangement side
Formula, two of which identical pushes away or drawn magneto-resistor sensing unit array and is mixed into an array 103 ' and 106 ', then along Y-axis
Center line 100 or the symmetric arrays of X-axis center line 101.
Figure 12 and Figure 13 is respectively the row that magneto-resistor sensing unit forms duplicate rows in soft magnetism flux concentrator array gap location
Row mode, magneto-resistor sensing unit row 311 and 312 are located at same gap location, and relative to gap center line 400,401 with identical
Distance, with ensure there is the identical field gain factor.Wherein Figure 12 is two same type magneto-resistor sensing unit arrays
Relative to the symmetrical arrangement mode of X-axis center line, Figure 13 is two same type magneto-resistor sensing unit array mixing arrangements
Arrangement mode.The magneto-resistor sensing unit series, parallel or connection in series-parallel that the magneto-resistor sensing unit array is included
Into both ends mouth structure.
Figure 14 be+X ,-X magneto-resistor sensing unit array Typical laser magnetic anneal scan mode, 103 and 104 be+X to
The magneto-resistor sensing unit array in magnetic-field-sensitive direction, 105 and 106 be the magneto-resistor sensing unit battle arrays of-X to magnetic-field-sensitive direction
Row, and be symmetrically distributed in relative to soft magnetism flux concentrator Y-axis center line in gap.During scanning, laser facula path is respectively
700 and 800, magneto-resistor sensing unit array is scanned respectively along gap direction, so as to save the time needed for scanning,
500 and 600 outer magnetic field directions applied by magnetic-field annealing, it can be obtained by the gain effect of soft magnetism flux concentrator array
To enhancing.
Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of creative work is made
The all other embodiment obtained, belong to the scope of the utility model protection.Although the utility model just side of being preferable to carry out
Formula is illustrated and described, it is understood by those skilled in the art that without departing from claim of the present utility model
Limited range, variations and modifications can be carried out to the utility model.
Claims (10)
- A kind of 1. single-chip highly sensitive magnetic resistive linearity sensor, it is characterised in that including：Substrate on X-Y plane；Soft magnetism flux concentrator array on the substrate, the soft magnetism flux concentrator array include multiple soft magnetism flux Concentrator, and formed with gap between two neighboring soft magnetism flux concentrator, the major axis in the gap along the Y direction, between described The short axle of gap is along the X direction；And+ X magneto-resistors sensing unit array and-X magneto-resistors above or below the soft magnetism flux concentrator array sense The cell array ,+X magneto-resistors sensing unit array ,-X magneto-resistors sensing unit array include leading between the soft magnetism respectively + X magneto-resistors the sensing unit ,-X magneto-resistor sensing units of the gap location of concentrator are measured, wherein ,+X magneto-resistors the sensing unit Array, which is electrically connected, is connected into X push arms, and-X magneto-resistors the sensing unit array, which is electrically connected, to be connected into X and draw bow, and the X push arms and the X draw bow It is electrically connected and is connected into push-pull type X-axis magnetic resistance sensor,Magneto-resistor sensing unit arranged adjacent with same magnetic field sensitive direction, the magneto-resistor sensing unit have identical Magnetic multi-layer film structure, the magnetic multi-layer film structure from bottom to top include Seed Layer, lower electrode layer, inverse ferric magnetosphere, pinning layer, Ru, reference layer, nonmagnetic intermediate layer, free layer, magnetic bias layer, upper electrode layer, the structure of passivation layer include kind from bottom to top Sublayer, lower electrode layer, inverse ferric magnetosphere, reference layer, nonmagnetic intermediate layer, free layer, magnetic bias layer, upper electrode layer, passivation layer, it is described Nonmagnetic intermediate layer is Al2O3Or MgO, the magnetic bias layer are hard magnetic layer, another inverse ferric magnetosphere or synthetic anti-ferromagnetic layer knot Structure, the passivation layer is the material to laser-light transparent, using the program control magnetic anneal of laser, major axis Y of the laser facula along the gap Magneto-resistor sensing unit array described in scanning direction, amplify the soft magnetism flux concentrator array magnetic field cause it is described antiferromagnetic The X of layer is to external magnetic field laser annealing.
- A kind of 2. single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that+X The magnetic-field-sensitive direction of magneto-resistor sensing unit array and the-X magneto-resistors sensing unit array is respectively along+X, -X direction, institute State the major axis of+X and-X magneto-resistor sensing unit arrays along the Y direction, the magneto-resistor sensing unit is all MTJ magneto-resistor lists Member, the MTJ magnetoresistance cells are shaped as ellipse, or middle part is rectangle and is located at the both ends of middle part opposite sides respectively For triangle or the shape of sector.
- 3. a kind of single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that described soft Magnetic flux concentrator is strip, the long axis direction of the soft magnetism flux concentrator along the Y direction, short-axis direction along the X direction, Length is 500-5000 μm, and width is 500-5000 μm, and thickness is 5-30 μm, and the gap width is 6.5-10 μm, and described Soft magnetism flux concentrator is High-magnetic permeability soft magnetic alloy, the High-magnetic permeability soft magnetic alloy include one kind in Fe, Co, Ni element or It is a variety of.
- A kind of 4. single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that X-direction External magnetic field magnetic field intensity is Hex, and the magneto-resistor sensing unit has identical X direction magnetic field intensity Brx, the field gain factor For Brx/ (μ0* Hex), wherein μ0For space permeability, and the field gain factor is between 1-10, the soft magnetism flux concentrator Array has identical gap, and the width of the soft magnetism flux concentrator at both ends is more than the soft magnetism flux concentrator positioned at the both ends Between soft magnetism flux concentrator width, to cause the magnetic field in gap at both ends and the centrally located gap to increase The beneficial factor is identical.
- 5. a kind of single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that described soft Magnetic flux concentrator array includes N number of soft magnetism flux concentrator, and wherein N is the integer more than 0,When N is odd number, the magneto-resistor sensing unit array is distributed in（N+1）/ 2 soft magnetism flux concentrator both sides N-1 gaps in；When N is even number, the magneto-resistor sensing unit array is distributed in the 1st to N/2, and N/2+1 is to n-th soft magnetism Gap location between flux concentrator.
- 6. a kind of single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that described to push away Pull magneto-resistor linear transducer is half-bridge, full-bridge or quasi- bridge structure.
- 7. a kind of single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that described soft The gap distribution of magnetic flux concentrator has single file magneto-resistor sensing unit；Or the gap distribution of the soft magnetism flux concentrator There is duplicate rows magneto-resistor sensing unit, and equidistantly distribute in the both sides of the soft magnetism flux concentrator gap center line.
- A kind of 8. single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that+X Magneto-resistor sensing unit array and the-X magneto-resistors sensing unit array are distributed in the X side of the soft magnetism flux concentrator array To the both sides of center line or the both sides of Y-direction center line.
- 9. a kind of single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that described to push away Pull magnetic resistance sensor forms the+X magneto-resistors sensing unit array of two push arms and forms two-X to draw bow Resistance sensing unit array is spatially separating respectively or spatial mixing, the magnetic that the magneto-resistor sensing unit array is included Resistance sensing unit series, parallel or connection in series-parallel are into both ends mouth structure.
- 10. a kind of single-chip highly sensitive magnetic resistive linearity sensor according to claim 1, it is characterised in that described Passivation layer surface covers one layer of ARC, and institute's passivation layer is Ultra-Violet Laser transparent material or infrared laser transparent material, institute Stating Ultra-Violet Laser transparent material includes BCB, Si3N4、Al2O3、HfO2、AlF3、GdF3、LaF3、MgF2、Sc2O3、HfO2、SiO2, institute Stating infrared laser transparent material includes diamond-like carbon film, MgO, SiN, SiC, AlF3、MgF2、SiO2、Al2O3、ThF4、ZnS、 ZnSe、ZrO2、HfO2、TiO2、Ta2O7、Si、Ge。
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| CN114243242A (en) * | 2021-12-17 | 2022-03-25 | 江苏多维科技有限公司 | Electrically shielded magnetic tunnel junction signal isolator |
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| CN114243242A (en) * | 2021-12-17 | 2022-03-25 | 江苏多维科技有限公司 | Electrically shielded magnetic tunnel junction signal isolator |
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