WO2020228354A1 - 显示面板和显示装置 - Google Patents
显示面板和显示装置 Download PDFInfo
- Publication number
- WO2020228354A1 WO2020228354A1 PCT/CN2019/130726 CN2019130726W WO2020228354A1 WO 2020228354 A1 WO2020228354 A1 WO 2020228354A1 CN 2019130726 W CN2019130726 W CN 2019130726W WO 2020228354 A1 WO2020228354 A1 WO 2020228354A1
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- Prior art keywords
- layer
- display area
- thickness
- display
- display panel
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- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000002834 transmittance Methods 0.000 claims abstract description 41
- 239000010410 layer Substances 0.000 claims description 302
- 239000000463 material Substances 0.000 claims description 31
- 229910052709 silver Inorganic materials 0.000 claims description 28
- 239000004332 silver Substances 0.000 claims description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 25
- 239000012044 organic layer Substances 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 8
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical group [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 5
- 229920001621 AMOLED Polymers 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- 241000258241 Mantis Species 0.000 claims 2
- 239000012790 adhesive layer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80517—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- This application relates to the field of OLED display technology, and in particular to a display M panel and a display device. Background technique
- AMOLED active matrix organic light-emitting diode
- This application provides a display M board and a display device.
- a display panel including: a display area, the display area includes a first display area and a second display area; the light transmittance of the second display area is greater than that of the first display area 1. The light transmittance of the display area;
- the display panel includes a substrate, an anode layer, a light emitting layer, and a cathode layer located in the first display area and the second display area; the anode layer is located on the substrate; the light emitting layer is located on the anode layer, and the cathode layer is located Layer up
- the anode layer includes a reflective layer; the thickness of the reflective layer in the second display area is smaller than the thickness of the reflective layer in the first display area.
- the material of the reflective layer may be metal. Since the reflectivity of the metal is relatively high, the reflective performance of the reflective layer can be improved.
- the material of the reflective layer is silver. Since silver can realize a semi-transparent and semi-reflective function for light, the reflective layer in the second display area can not only meet the light transmission requirements, but also meet the light reflection requirements.
- the I® pole layer may further include a first transparent conductive layer and a second transparent conductive layer; the reflective layer is located between the first transparent conductive layer and the second transparent conductive layer.
- the anode layer can both achieve conductivity Yes, it can realize the light transmission function and the light reflection function.
- the material of the first-layer transparent conductive indium tin oxide or indium zinc oxide is not limited.
- both the electrode layer Division 'to achieve a conducting function, and may be implemented through function.
- the material of the second transparent conductive layer is indium tin oxide or steel zinc oxide.
- the anode layer can achieve both a conductive function and a light transmission function.
- the thickness of the cathode layer in the second display area is smaller than the thickness of the cathode layer in the first display area.
- the light transmittance of the second display area is further increased than the light transmittance of the first display area.
- the thickness of the reflective layer located in the second display area is greater than or equal to the thickness of the cathode layer located in the second display area. In this way, it can be ensured that the reflective layer can reflect the light emitted by the light-emitting layer back to ensure the light-emitting brightness of the second display area.
- the material of the cathode layer is a magnesium-silver alloy. Due to the strong conductivity of silver, ii can achieve a semi-transmissive and semi-reflective function for light, which in turn can make the light in the exit direction and the light reflected back by the cathode layer more powerful, and improve the light extraction efficiency.
- the ratio of the mass of magnesium to the mass of silver in the cathode layer ranges from 1:4 to 1:20. Increasing the proportion of silver in the cathode layer can enhance the conductivity of the cathode layer and increase the luminous efficiency.
- the bottom includes a first substrate and a second bottom
- the first M bottom is located in the first display area
- the second substrate is located in the second display area
- the thickness of the second village bottom is smaller than the thickness of the first village bottom. Since the thickness of the second substrate is smaller than the thickness of the first substrate; Division 'to further improve the light transmittance of the second display region.
- the display panel further includes a driving circuit layer, and the driving circuit layer is located between the substrate and the anode layer.
- the drive circuit layer located in the first display area includes a plurality of first drive circuit units, the first drive circuit unit includes a transistor and a storage capacitor; the drive circuit layer located in the second display area includes a plurality of A second driving circuit unit, where the second driving circuit unit includes a storage capacitor and a transistor, and the number of transistors in the second driving circuit unit is smaller than the number of transistors in the first driving circuit unit.
- the structural complexity of the second driving circuit unit is less than the structural complexity of the first driving circuit unit, so that the conductive M product in the portion of the driving circuit layer located in the second display area is smaller, and the transparency of the second display area can be improved. Light rate.
- the display panel may further include a non-display area surrounding the display area;
- the packaging layer includes: a touch layer, a polarizer, a flexible circuit board, a first bonding layer and a glass cover plate;
- the touch layer Located on the cathode layer, the polarizer position On the touch layer, the lower edge of the polarizing plate provided with notches; the cutout in the non-display area; an upper plate bit dry touch of the flexible circuit layer, the circuit-flexible portion is located The other part of the gap is located outside the gap; the first bonding layer is located on the flexible circuit board and the polarizer; the glass cover is located on the first bonding layer.
- the encapsulation layer may further include an ink layer; the ink layer is positioned on the first bonding layer of the non-display area : and the position is opposite to the position of the flexible circuit board ; The upper surface of the ink layer is flush with the upper surface of the first bonding layer in the display area.
- a display device including:
- the device body has a device area
- the above-mentioned display M board; the display panel is covered on the device body;
- the device area is located below the second display area, and the device area includes a photosensitive device that emits or collects light through the second display area;
- the thickness of the reflective layer located in the second display area on the display panel is smaller than the thickness of the reflective layer located in the first display area. Therefore, the light transmittance of the second display area is greater than that of the first display area.
- Light transmittance, 1 can enable photosensitive devices to be arranged under the second display area, which is beneficial to increase the screen-to-body ratio, and enables the photosensitive devices located under the second display area to receive enough light to ensure that the photosensitive devices can work normally .
- Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present application.
- Fig. 2A is a schematic structural diagram of another display panel according to an embodiment of the present application.
- Fig. 2B is a schematic structural diagram of another display panel according to an embodiment of the present application.
- Figure 2(: is a schematic structural diagram of another display panel according to the implementation of the present application.
- Fig. 2D is a schematic structural diagram of another display panel according to an embodiment of the present application.
- Fig. 3 is a schematic structural diagram of another display panel according to the implementation of the present application.
- Fig. 4 is a schematic structural diagram of another display panel according to an embodiment of the present application. Detailed ways
- the display panel 1 includes: a display area 11.
- the display area 11 includes a first-display region A1 and the second display region A2.
- the light transmittance of the second display area A2 is greater than the light transmittance of the first display area A1.
- the display panel 1 includes a substrate 25, an anode layer 21, a light emitting layer 22, and a cathode layer 23 for the first display area A1 and the second display area A2.
- the electrode layer 21 is located on the substrate 25, the light emitting layer 22 is located on the anode layer 21, and the cathode layer 23 is located on the light emitting layer 22.
- the display panel 1 may be an OLED display panel; the light-emitting layer 22 is an organic light-emitting material layer.
- the anode layer 21 includes a reflective layer 211.
- the thickness of the reflective layer 211 located in the second display area A2 is smaller than the thickness of the reflective layer 211 located in the first display area A1.
- ⁇ reflective layer 211 may include a first region and a second region, the first region of the first display region, second display region in the second region, the second region is less than the thickness of the thickness of the first-region.
- the thickness of the reflective layer located in the second display area on the display panel of the embodiment of the present application is smaller than the thickness of the reflective layer located in the first display area, so that the light transmittance of the second display area is greater than the light transmittance of the first display area, thereby
- the photosensitive device can be arranged under the second display area, which is beneficial to increase the screen-to-body ratio, and the photosensitive device located under the second display area can receive sufficient light to ensure that the photosensitive device can work normally.
- the material of the reflective layer 211 may be metal.
- the reflectivity of ffi to metal is relatively high, therefore, the reflective performance of the reflective layer can be improved.
- the material of the reflective layer 2i i may be silver. Since silver can realize a semi-transparent and semi-reflective function for light, the reflective layer in the second display area can not only meet the light transmission requirement, but also meet the light reflection requirement.
- the semi-transparent and semi-reflective function here means that the light is partially transmitted and partially reflected.
- the semi-transmissive and semi-reflective function may be that the transmittance and reflectance of light are both 50%.
- the first display region A1-thickness range of the reflection layer 211 may be 600 ⁇ 1200 angstroms, the thickness of the second reflective layer 211 may be a display area A2 20 -100 Amy.
- the anode layer 21 further Division 'includes a first transparent conductive layer 212 and the second transparent conductive layer 213.
- the reflective layer 211 may be located between the first transparent conductive layer 212 and the second transparent conductive layer 213.
- the anode may be achieved electrically conductive functional layer, and a light transmitting function can be achieved, but also a reflecting function may be achieved.
- the material of the first transparent conductive layer 212 is indium tin oxide (ITO) or indium zinc oxide.
- the material of the first transparent conductive layer 212 is indium tin oxide (ITO) c, and the anode layer can achieve both a conductive function and a light transmission function.
- the material of the second transparent conductive layer is indium tin oxide or indium zinc oxide.
- the material of the second transparent conductive layer is indium tin oxide.
- the anode layer can achieve both a conductive function and a light transmission function.
- the reflective layer 211 can be prepared by the following two methods:
- Method 1 First prepare a first layer of silver film in the first display area A1 and the second display area A2.
- the thickness of the first layer of silver film is the thickness of the reflective layer 211 of the second display area A2;
- a second silver film is prepared on the first silver film in the display area A1, and the sum of the thickness of the first silver film and the thickness of the second silver film is equal to the thickness of the reflective layer 211 in the first display area A1 described above.
- the method of preparing the first two in the first display region A1 and second region A2 of the display Wang: silver thin film layer, the film thickness of the third layer of silver is the above-display region of the reflective layer 21 of A1] thickness; Then, The third layer of silver film in the second display area A2 is etched until the thickness of the third layer of silver film in the second display area A2 is the thickness of the above-mentioned reflective layer 211 of the second display area A2.
- the second transparent conductive layer 213 is located above the reflective layer 211, the second transparent conductive layer 213 is made of indium tin oxide (ITO) and is sputtered
- ITO indium tin oxide
- the prepared second transparent conductive layer upper surface 213 is present in the junction-given slope; i.e., the upper surface of the anode layer 21 in the presence of a certain slope at the junction, not flat, and therefore difficult to produce pixels in the junction.
- the boundary between the reflective layer 211 in the first display area A1 and the reflective layer 211 in the second display area A2 may be continuous.
- the first display area A1 and the second display area A2 are AMOLED display areas.
- the driving modes of the first display area A1 and the second display area A2 may both be active driving.
- the anode layer 21 in the first display area A] may include block electrodes arranged in an array, and the anode layer 21 in the second display area A2 also includes blocks arranged in an array. Shape I® pole. Therefore; in this embodiment, referring to FIG. 2C, the junction of the reflective layer 211 in the first display area A1 and the reflective layer 211 in the second display area A2 may be discontinuous.
- the anode layer 21 in the first display area Ai and the anode layer 21 in the second display area A2 may be discontinuous.
- a pixel definition layer (PDL) 28 may be filled between the anode layer 21 in the first display area A1 and the anode layer 21 in the second display area A2.
- a pixel definition layer (PDL) 28 can also be filled between adjacent block anodes in the first display area A1, and a pixel definition layer (PDL) 28 can also be filled between adjacent block anodes in the second display area A2.
- the upper surface of the anode layer 21 in the second display area A2 and the upper surface of the anode layer 2 in the first display area A1 are not on the same level.
- the thickness of the cathode layer 23 located in the second display area A2 is smaller than the thickness of the cathode layer 23 located in the first display area A1.
- the cathode layer 23 may include a third area and a fourth area.
- the third area is located in the first display area
- the fourth area is located in the second display area.
- the thickness of the fourth area is smaller than the thickness of the third area.
- the thickness of the cathode layer located in the second display area is smaller than the thickness of the cathode layer located in the first display area, so that the light transmittance of the second display area is further greater than the light transmittance of the first display area.
- the thickness of the reflective layer 211 in the second display area A2 may be larger than the thickness of the cathode layer 23 in the second display area A2. In another embodiment, the thickness of the reflective layer 211 located in the second display area A2 may also be equal to the thickness of the cathode layer 23 located in the second display area A2. In this way, it can be ensured that the reflective layer can reflect the light emitted by the light-emitting layer back, thereby ensuring the light-emitting brightness of the second display area.
- the material of the cathode layer 23 may be a magnesium-silver alloy. Because of the strong conductive ability of silver, and 1 can realize the function of transflective and semi-reflective to light, the light in the exit direction and the light reflected back by the cathode layer can be enhanced to increase the light extraction efficiency. Among them, the M material of the cathode layer 23 is not limited to magnesium-silver alloy.
- the ratio of the mass of magnesium to the mass of silver in the cathode layer may range from 1:4 to 1:20. Increasing the proportion of silver in the cathode layer can enhance the conductivity of the cathode layer and increase the luminous efficiency.
- the thickness of the cathode layer 23 in the first display area A1 may range from 80 to 150 angstroms, and the thickness of the cathode layer 23 in the second display area A2 may range from 20 to 60 angstroms.
- the display panel 1 may further include an electron injection layer 24.
- the electron injection layer 24 may be located between the cathode layer 23 and the light emitting layer 22.
- the electron injection layer can improve the carrier injection capability.
- the material of the electron injection layer 24 may include at least one of magnesium, potassium, lithium, cesium, and silver.
- Magnesium, potassium, lithium, and cesium are respectively active metals with low work function, which is good for electron transmission.
- the material of the electron injection layer is magnesium-silver alloy.
- the ratio of the mass of magnesium to the mass of silver in the electron injection layer may range from 4: 1 to 20: 1. Increase the content of magnesium in the electron injection layer; it can increase the carrier injection capability.
- the display panel 1 may further include an encapsulation layer (not shown), and the encapsulation layer may be located on the cathode layer 23. In this way, To protect the light-emitting devices.
- the substrate 25 may include a first substrate 251 and a second substrate 252.
- the first substrate 251 is located in the first display area A1, and the second substrate 252 is located in the second display area A2.
- the light transmittance of the second substrate 252 is greater than the light transmittance of the first substrate 251. Since the light transmittance of the second substrate is larger than the light transmittance of the first substrate, the light transmittance of the second display area can be further improved.
- the thickness of the second substrate 252 is smaller than the thickness of the first substrate 251. Since the thickness of the second substrate is smaller than the thickness of the first substrate, the light transmittance of the second display area can be further improved.
- At least a part of the second substrate 252 in the thickness direction and the first substrate 251 have an integral structure. In this way, the preparation process can be saved.
- the second substrate 252 shown in Figure 2D includes a first organic layer-2522, in the first organic layer on a first inorganic layer and a transparent 25222521 organic layer between the first layer 2522 below 2523.
- the first substrate 251 includes a second organic layer 2511, a second inorganic layer 2512, a third organic layer 2513, and a third inorganic layer 2514 that are sequentially overlapped from bottom to top.
- the first organic layer 2522 and the third organic layer 2513 are an integral structure.
- the first inorganic layer 2521 and the third inorganic layer 2514 are an integral structure.
- the thickness of the first organic layer 2522 is smaller than the thickness of the third organic layer 2513, and the thickness of the first inorganic layer 2521 is equal to the thickness of the third inorganic layer 2514.
- the material of the transparent layer 2523 can be a material with high light transmittance.
- the light transmittance of the transparent layer 2523 may be greater than 90%.
- the material of the transparent layer 2523 may include at least one of PET (polyethylene terephthalate) and PC (polycarbonate). The light transmittance of PET and PC can both be 92%.
- a protective layer 26 is further provided under the first substrate 25: [and the second substrate 252.
- the protective layer 26 can protect the first substrate 251 and the second M bottom 252, improve the mechanical strength of the display panel, and thereby increase the lifetime of the display panel.
- the light transmittance of the preferred second substrate is greater than 50%.
- the light transmittance of the first substrate is 30%-60%.
- the display panel further includes a driving circuit layer 27, and the driving circuit layer 27 is located between the substrate 25 and the anode layer 21.
- the driving circuit layer 27 located in the first display area A1 includes a plurality of first driving circuit units.
- the first driving circuit unit includes a transistor and a storage capacitor.
- the driving circuit layer 27 located in the second display area A2 includes a plurality of second driving circuit units.
- the second driving circuit unit includes a storage capacitor and a transistor. The number of transistors of the second drive circuit unit is smaller than the number of transistors of the first drive circuit unit. In this way, it can be beneficial to increase the light transmittance of the second display area.
- the display panel 1 may also include a non-display area surrounding the display area 11 12.
- the packaging layer (not shown) may include: a touch layer 311, a polarizer 312, a flexible circuit board 313, a first bonding layer 314, and a glass cover plate 315.
- the touch layer 311 is located on the cathode layer 23.
- the polarizer 3 1-2 is located on the touch layer 311.
- the lower edge of the polarizer 312 is provided with a notch 3121. Specifically, the lower edge of the polarizer 312 is recessed inward to form the notch 312:1.
- the gap 3121 is located in the non-display area 12.
- the flexible circuit board 313 is located on the touch layer 311.
- the flexible circuit 313 is partly located in the gap 3121 and the other part is located outside the gap 3121.
- the flexible circuit 3D-end is located in the gap 3121 and extends from the bottom of the gap 3121 to the gap 3121 outside.
- the flexible circuit board 313 is electrically connected to the touch layer 311.
- the first bonding layer 314 is located on the flexible circuit board 313 and the polarizer 312.
- the glass cover 315 is located on the first bonding layer 314.
- the step difference during bonding can be reduced and avoid The generation of bubbles. And ii, it avoids the warping of the polarizer caused by the overlapping of the polarizer and the touch layer, and avoids the phenomenon that the contact surface is convex when the polarizer and the touch layer are attached.
- a second display area A2 can be provided at a position near the top of the display area n of the display panel 1, as shown in FIG. i.
- the encapsulation layer may further include an ink layer 316.
- the ink layer 316 is located on the first bonding layer 314 of the non-display area 12, and the position is opposite to the position of the flexible circuit board 313.
- the upper surface of the ink layer 316 is flush with the upper surface of the first bonding layer 314 in the display area 11. In this way, by increasing the thickness of the ink layer, the first bonding layer at the gap and the flexible circuit board can be pressed together, so as to fully fill the gaps and clusters and avoid the generation of bubbles during the full bonding process.
- the distance between the lower surface of the flexible circuit board 313 and the upper surface of the ink layer 316 is a first distance
- the lower surface of the polarizer 312 in the display area 11 is to the first bonding layer 314 between the upper surface distance is a second distance, the second distance and distance the same.
- the display panel 1 may further include a second bonding layer (not shown), and the second bonding layer is located between the touch layer 3U and the polarizer 312.
- the material of the first bonding layer may be optically transparent glue.
- the material of the second bonding layer can also be optically transparent glue.
- the embodiment of the present application also proposes a display device.
- the display device includes: a device body and the display panel described in any of the above embodiments.
- the display panel covers the device body.
- the device body has a device area.
- the device area is located behind the second display area, and the device area includes a photosensitive device that emits or collects light through the second display area.
- the photosensitive device includes at least one of the following: a camera, a light sensor, and a light emitter.
- Gao the beneficial effects of the present embodiment is that: due to the thickness of the display layer in the second reflective display region is smaller than the thickness of the reflective layer is located in the first display region on the display panel; thus, the light transmittance such that the second display region is larger than the display ⁇
- the light transmittance of the area so that the photosensitive device can be arranged behind the second display area, which is beneficial to increase the screen-to-body ratio, and 1 enables the photosensitive device located behind the second display area to receive sufficient light to ensure that the photosensitive device Can work normally.
- the display device in this embodiment may be any product or component with display function such as electronic paper, mobile phone, tablet computer, television, notebook computer, digital photo frame, navigation window, etc.
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Abstract
一种显示面板(1)和显示装置。所述显示面板(1),包括:显示区(11),显示区(11)包括第一显示区(A1)与第二显示区(A2);第二显示区(A2)的透光率大于第一显示区(A1)的透光率;显示面板(1)包括位于第一显示区(A1)与第二显示区(A2)的衬底(25)、阳极层(21)、发光层(22)以及阴极层(23);阳极层(21)位于衬底(25)上,发光层(22)位于阳极层(21)上,阴极层(23)位于发光层(22)上;阳极层(21)包括反射层(211);位于第二显示区(A2)的反射层(211)的厚度小于位于第一显示区(A1)的反射层(211)的厚度。
Description
显示面板和显示装置
相关申请
本申请要求 2019年 05月 15 日申请的, 申请号为 201920703006.3 , 名称为“显示面板和 显示装置”的中国专利申请的优先权, 在此将其全文引入作为参考。 技术领域
本申请涉及 OLED显示技术领域, 尤其涉及一种显示 M板和显示装置。 背景技术
随着有源矩阵有机发光二极管 (AMOLED) 显示技术的快速发展, 周户对显示屏幕占比 的要求越来越高。 由于移动终端的显示屏幕顶部需通常要安装摄像头、 传感器、 听筒等元件, 因此, 相关技术中采用开槽 (notch) 设计方案, 在显示屏幕顶部通常会预留一部分区域用于 安装上述元件, 影响了屏幕的整体一致性, 因此全面屏显示受到业界越来越多的关注。 发明内容
本申请提供一种显示 M板和显示装置。
根据本申请实施例的第一方面, 提供一种显示面板; 包括: 显示区 ^ 所述显示区包括第 一显示区与第二显示区; 所述第二显示区的透光率大于所述第一显示区的透光率;
所述显示面板包括位于所述第一显示区与所述第二显示区的衬底、 阳极层、 发光层以及 阴极层; 阳极层位于衬底上; 发光层位于阳极层上, 阴极层位于发光层上;
所述阳极层包括反射层; 位于所述第二显示区的反射层的厚度小于位于所述第一显示区 的反射层的厚度。
在-一个实施例中, 所述反射层的材料可为金属。 由于金属的反射率比较高, 因此, 可以 提高反射层的反射性能。
优选地, 所述反射层的材料为银。 由于银可以对光实现半透半反功能, 这样, 第二显示 区的反射层既可以满足透光需求, 又可以满足反光需求。
在一个实施例中, 所述 I®极层还可包括第一透明导电层与第二透明导电层; 所述反射层 位于所述第一透明导电层与所述第二透明导电层之间。 这样, 所述阳极层既可以实现导电功
能, 又可以实现透光功能, 还可以实现反光功能。
优选地, 所述第 ·透明导电层的材料为氧化铟锡或氧化铟锌。 这样, 所述 极层既司 '以 实现导电功能, 又可以实现透光功能。
优选地, 所述第二透明导电层的材料为氧化铟锡或氧化钢锌。 这样, 所述阳极层既可以 实现导电功能, 又可以实现透光功能。
在一个实施例中, 位于所述第二显示区的阴极层的厚度小予位于所述第一显示区的阴极 层的厚度。
由于位于第二显示区的阴极层的厚度小于位于第一显示区的阴极层的厚度, 因此, 使得 第二显示区的透光率迸一步大于第一显示区的透光率。
优选的, 位于所述第二显示区的反射层的厚度大于或者等干位于所述第二显示区的阴极 层的厚度。 这样, 可保证反射层可以将发光层发射的光反射回去, 以保证第二显示区的发光 亮度。
优选地, 阴极层的材料为镁银合金。 由于银的导电能力强, ii可以对光实现半透半反功 能, 进而可以使出射方向的光与被阴极层反射回去的光发生相千増强, 提高出光效率。
优选地, 所述阴极层中镁的质量与银的质量的比倒范围为 1 :4〜 1 :20。 阴极层中提高银的 比例, 可以增强阴极层的导电能力, 并提高发光效率。
优选地, 所述村底包括第一衬底及第二村底, 所述第一 M底位于第一显示区, 第二衬底 位于第二显示区, 所述第二衬底的透光率大于第 ·衬底的透光率。 由于第二衬底的透光率大 于第一衬底的透光率, 可进一步提高第二显示区的透光率。
优选的, 所述第二村底的厚度小于所述第一村底的厚度。 由于第二衬底的厚度小于第一 衬底的厚度; 司 '进一步提高第二显示区的透光率。优选的, 所述显示面板还包括驱动电路层, 所述驱动电路层位于所述衬底与所述阳极层之间。
优选的, 位于所述第一显示区的驱动电路层包括多个第一驱动电路单元, 所述第一驱动 电路单元包括晶体管及存储电容; 位于所述第二显示区的驱动电路层包括多个第二驱动电路 单元, 所述第二驱动电路单元包括存储电容及晶体管, 所述第二驱动电路单元的晶体管的数 量小于所述第一驱动电路单元的晶体管的数量。 这样, 第二驱动电路单元的结构复杂度小于 第一驱动电路单元的结构复杂度,从而驱动电路层位于第二显示区的部分中的导电 M积较小, 进而可提高第二显示区的透光率。
所述显示面板, 还可包括围绕所述显示区的非显示区; 所述封装层包括: 触控层、 偏光 片、 柔性电路板、 第一贴合层以及玻璃盖板; 所述触控层位于所述阴极层上, 所述偏光片位
于所述触控层上, 所述偏光片的下边缘设有缺口; 所述缺口位于所述非显示区; 所述柔性电 路板位干所述触控层上, 所述柔性电路 ·部分位于所述缺口中, 另一部分位于所述缺口的外 部; 所述第一贴合层位于所述柔性电路板与所述偏光片上; 所述玻璃盖板位于所述第一贴合 层上。
这样, 通过在偏光片的下边缘设置缺口 并将触控层的柔性电路板设置在缺口内, 然后 在柔性电路板与偏光片上覆盖贴合层, 可以减小蛄合时的段差, 避免气泡的产生。 而且, 避 免了偏光片与触控层交叠导致的偏光片翘曲, 避免了偏光片与触控层贴合时出现接触面存在 凸 M的现象。
所述的显示面板, 所述封装层还 1可包括油墨层; 所述油墨层位予所述非显示区的所述第 ·贴合层上: ^ 且位置与所述柔性电路板的位置相对; 所述油墨层的上表面与所述显示区中的 第一贴合层的上表面齐平。
这样, 可以通过增加油墨层的厚度将缺口处第一贴合层与柔性电路板压合, 充分填补段 差, 从而避免全贴合过程中气泡的产生。 根据本申请实施例的第二方面, 提供一种显示装置; 包括:
设备本体, 具有器件区;
上述的显示 M板; 所述显示面板覆盖在所述设备本体上;
其中, 所述器件区位于所述第二显示区的下方, 且所述器件区包括透过所述第二显示区 发射或者采集光线的感光器件;
根据上述实施例可知, 由于显示面板上位于第二显示区的反射层的厚度小于位于第一显 示区的反射层的厚度, 因此, 使得第二显示区的透光率大予第一显示区的透光率, 从而 1可使 得第二显示区下方可设置感光器件, 有利于提高屏占比, 且可使位于第二显示区下方的感光 器件可接收到足够的光线, 保证感光器件可正常工作。
应当理解的是, 以上的一般描述和后文的细节描述仅是示例性和解释性的, 并不能限制 本申请。 酎图说明
此处的附图被并入说明ts中并构成本说明书的一部分, 示出了符合本牢请的实施例, 并 与说明 一起用于解释本申请的原理。
图 1是根据本申请实施例示出的一种显示面板的结构示意图。
图 2A是根据本申请实施例示出的另一种显示面板的结构示意图。
图 2B是根据本申请实施例示出的另一种显示面板的结构示意图。
图 2(:是根据本申请实施洌示出的另一种显示面板的结构示意图。
图 2D是根据本申请实施例示出的另一种显示面板的结构示意图。
图 3是根据本申请实施倒示出的另一种显示面板的结构示意图。
图 4是根据本申请实施例示出的另一种显示面板的结构示意图。 具体实施方式
下面将结合附图对本发明的示劍性实施例进行详细地说明。 下面的描述涉及附图时, 除 非另有说明, 否则不同附图中的相同数字表示相同或相似的要素。 以下示例性实施例中所描 述的实施方式并不代表与本申请相 ·致的所有实施方式。 相反, 它们仅是与如所附权利要求 书中所详述的、 本申请的一些方面相一致的装置和方法的示例。
本申请实施例提供一种显示面板。 请参阅图 1, 该显示面板 1包括: 显示区 11。 所述显 示区 11包括第 ·显示区 A1和第二显示区 A2。所述第二显示区 A2的透光率大于所述第一显 示区 A1的透光率。
请参阅图 2A, 所述显示面板 1包括位子所述第一显示区 A1与所述第二显示区 A2的衬 底 25、 阳极层 21、 发光层 22以及阴极层 23。 极层 21位于衬底 25上, 发光层 22位于阳 极层 21上, 阴极层 23位于发光层 22上。
所述显示面板 1可以是 OLED显示面板; 所述发光层 22为有机发光材料层。
所述阳极层 21包括反射层 21 1。 位于所述第二显示区 A2的反射层 211的厚度小于位于 所述第一显示区 A1的反射层 211的厚度。换句话说 ^反射层 211可包括第一区域与第二区域, 第一区域位于第一显示区, 第二区域位于第二显示区, 第二区域的厚度小于第 ·区域的厚度。
本申请实施例的显示面板上位于第二显示区的反射层的厚度小于位于第一显示区的反射 层的厚度, 使得第二显示区的透光率大于第一显示区的透光率, 从而可使得第二显示区下方 可设置感光器件, 有利于提高屏占比, 且可使位于第二显示区下方的感光器件能够接收到足 够的光线, 以保证感光器件可正常工作。
在一个实施例中, 所述反射层 211 的材料可为金属。 ffi于金属的反射率比较高, 因此, 可以提高反射层的反射性能。
优选地, 所述反射层 2i i 的材料可为银。 由于银可以对光实现半透半反功能, 这样, 第 二显示区的反射层既可以满足透光需求; 又可以满足反光需求。 这里的半透半反功能是指光 部分透过部分反射。
优选的, 半透半反功能可以是光的透光率和反射率均为 50%。
当反射层 21]的材料为银时,所述第 ·显示区 A1中反射层 211的厚度范围可为 600〜 1200 埃米, 所述第二显示区 A2中反射层 211的厚度范围可为 20-100埃米。
在一个实施例中, 如图 2A所示, 所述阳极层 21还司'包括第一透明导电层 212与第二透 明导电层 213。 所述反射层 211可位于所述第一透明导电层 212与所述第二透明导电层 213 之间。 这样, 所述阳极层既可以实现导电功能, 又 1可以实现透光功能, 还 1可以实现反光功能。
所述第一透明导电层 212的材料为氧化铟锡 ( ITO)或氧化铟锌。优选地, 所述第一透明 导电层 212的 料为氧化铟锡 (ITO) c, 所述阳极层既可以实现导电功能, 又可以实现透光功 能。
所述第二透明导电层的材料为氧化铟锡或氧化铟锌。 优选地, 所述第二透明导电层的紂 料为氧化铟锡。 所述阳极层既可以实现导电功能, 又可以实现透光功能。
当反射层 211的材料为银时, 反射层 211可通过以下两种方法制备:
方法一: 先在第一显示区 A1与第二显示区 A2中制备第一层银薄膜, 第一层银薄膜的厚 度即为第二显示区 A2的反射层 211的厚度; 然后, 在第一显示区 A1的第一层银薄膜上制备 第二层银薄膜, 第一层银薄膜的厚度与第二层银薄膜的厚度之和等于上述的第一显示区 A1 的反射层 211的厚度。
方法二 先在第一显示区 A1与第二显示区 A2中制备第王 :层银薄膜, 第三层银薄膜的厚 度为上述的第 ·显示区 A1的反射层 21]的厚度; 然后, 对第二显示区 A2中的第:三层银薄膜 进行刻蚀, 直至第二显示区 A2中第三层银薄膜的厚度为上述的第二显示区 A2的反射层 211 的厚度。
需要强调的是, 当第一透明导电层 212位干反射层 2H的下方、 第二透明导电层 213位 于反射层 211的上方、第二透明导电层 213为氧化铟锡 ( ITO)且通过溅射或蒸镀的方式制备 第二透明导电层 213时, 如果第一显示区 A1 中的反射层 211与第二显示区 A2中的反射层 211的交界处是连续的话, 制备的第二透明导电层 213的上表面在该交界处存在 ·定的坡度; 即阳极层 21的上表面在该交界处存在一定的坡度, 不是平坦的, 因此难以在该交界处上制备 像素。 在上述的交界处不需要制备像素的实施倒中, 第一显示区 A1 中的反射层 211与第二 显示区 A2中的反射层 211的交界处可以是连续的。
优选的, 第一显示区 A1 与第二显示区 A2为 AMOLED显示区。 具体地, 第一显示区 A1与第二显示区 A2的驱动方式可均为主动驱动。 在本实施例中, 第一显示区 A] 中的阳极 层 21可包括阵列式排布的块状 极, 第二显示区 A2中的阳极层 21也包括阵列式排布的块
状 I®极。 因此; 在本实施例中, 请参阅图 2C, 在第一显示区 A1中的反射层 211与第二显示 区 A2中的反射层 211 的交界处可以是不连续的。 进一步地, 在上述的交界处, 第一显示区 Ai中的阳极层 21与第二显示区 A2中的阳极层 21可以是不连续的。 具体地, 在上述的交界 处,第一显示区 A1中的阳极层 21与第二显示区 A2中的阳极层 21之间可以填充像素定义层 (PDL) 28。 第一显示区 A1中相邻的块状阳极之间也可以填充像素定义层(PDL) 28, 第二 显示区 A2中相邻的块状阳极之间也可以填充像素定义层 (PDL) 28。 另外, 第二显示区 A2 中的阳极层 21的上表面与第一显示区 A1中的阳极层 2!的上表面不在同一水平面上。
如图 2A所示, 位于第二显示区 A2的阴极层 23的厚度小于位于第一显示区 A1的阴极 层 23的厚度。 换句话说, 阴极层 23可包括第三区域与第四区域, 第三区域位于第一显示区, 第四区域位干第二显示区, 第四区域的厚度小于第:三区域的厚度。 位于第二显示区的阴极层 的厚度小于位于第一显示区的阴极层的厚度, 使得第二显示区的透光率进一步大于第一显示 区的透光率。
在一个实施例中, 如图 2A所示, 位于第二显示区 A2的反射层 211的厚度可大干位于第 二显示区 A2的阴极层 23的厚度。 在另一个实施例中, 位于第二显示区 A2的反射层 211的 厚度也可等于位于第二显示区 A2的阴极层 23的厚度。 这样, 可保证反射层可以将发光层发 射的光反射回去, 进而保证第二显示区的发光亮度。
阴极层 23的材料可为镁银合金。 由予银的导电能力强, 且 1可以对光实现半透半反功能, 进而可以使出射方向的光与被阴极层反射回去的光发生相千增强; 提高出光效率。 其中, 阴 极层 23的 M料并不限于镁银合金。
所述阴极层中镁的质量与银的质量的比例范围可为 1 :4〜 1 :20。 阴极层中提高银的比例, 可以增强阴极层的导电能力, 并提高发光效率。
所述第一显示区 A1中阴极层 23的厚度范围可为 80〜 150埃米,所述第二显示区 A2中阴 极层 23的厚度范围可为 20〜 60埃米。
请参阅图 2B, 显示面板 1还可包括电子注入层 24。 所述电子注入层 24可位于所述阴极 层 23与所述发光层 22之间。 电子注入层可以提高载流子的注入能力。
所述电子注入层 24的材料可包括镁、钾、锂、铯中的至少一种以及银。 由子镁、钾、 锂、 铯分别为活泼金属, 功函数低, 有利于电子传输。
优选地, 所述电子注入层的材料为镁银合金。 所述电子注入层中镁的质量与银的质量的 比例范围可为 4: 1〜 20: 1。 提高电子注入层中镁的含量; 可以提高载流子的注入能力。
显示面板 1还可包括封装层 (未示出), 所述封装层可位于所述阴极层 23上。 这样, 可
以保护发光器件。
请一并参阅图 2B和图 2D, 所述衬底 25可包括第一衬底 251及第二衬底 252。第一衬底 251位于第一显示区 A1 , 第二衬底 252位于第二显示区 A2。 第二衬底 252的透光率大于第 一衬底 251 的透光率。 由于第二衬底的透光率大子第一衬底的透光率, 可进一步提高第二显 示区的透光率。
优选的, 如图 2A所示, 所述第二衬底 252的厚度小于所述第一衬底 251的厚度。 由于 第二衬底的厚度小于第一衬底的厚度, 可进一步提高第二显示区的透光率。
优选的,所述第二衬底 252在厚度方向上的至少一部分与所述第一衬底 251为一体结构。 这样, 可节约制备流程。
如图 2D所示所述第二衬底 252包括第 ·有机层 2522、位于所述第一有机层 2522上的第 一无机层 2521以及位于第一有机层 2522下方的透明层 2523。 所述第一衬底 251包括由下至 上依次交叠的第二有机层 2511、 第二无机 2512层、 第三有机层 2513和第三无机层 2514。 所 述第一有机层 2522与所述第三有机层 2513为一体结构。所述第一无机层 2521与所述第三无 机层 2514为一体结构。所述第一有机层 2522的厚度小予第三有机层 2513的厚度, 所述第一 无机层 2521的厚度等于所述第三无机层 2514的厚度。
透明层 2523的材料可采用高透光率的材料。 例如, 透明层 2523的透光率可大于 90%。 在一个实施例中, 透明层 2523的紂料可包括 PET (聚对苯二平酸乙二酯)、 PC (聚碳酸酯) 中的至少 -种。 PET及 PC的透光率可均为 92%。
优选的, 如图 2C所示, 第一衬底 25:[与第二衬底 252下方还设置有保护层 26。 保护层 26可对第一衬底 251与第二 M底 252进行保护, 提高显示面板的机械强度, 进而提高显示面 板的使羯寿命。
悅选的 所述第二衬底的透光率大于 50%。 所述第一衬底的透光率为 30%〜 60%。
如图 2C所示, 所述显示面板还包括驱动电路层 27, 所述驱动电路层 27位子所述衬底 25与所述阳极层 21之间。
位于所述第一显示区 A1的驱动电路层 27包括多个第一驱动电路单元。 所述第一驱动电 路单元包括晶体管及存储电容。 位于所述第二显示区 A2的驱动电路层 27包括多个第二驱动 电路单元。 所述第二驱动电路单元包括存储电容及晶体管。 所述第二驱动电路单元的晶体管 的数量小于所述第一驱动电路单元的晶体管的数量。 这样, 可以有利于提高第二显示区的透 光率。
请一并参阅图 2A、 图 3 以及图 4, 显示面板 1还可包括围绕所述显示区 1 1的非显示区
12。 所述封装层 (未示出) 可包括: 触控层 311、 偏光片 312、 柔性电路板 313、 第一贴合层 314以及玻璃盖板 315。 所述触控层 311位于所述阴极层 23上。 所述偏光片 3〗2位于所述触 控层 311上。 所述偏光片 312的下边缘设有一个缺口 3121 , 具体地, 所述偏光片 312的下边 缘向内凹陷形成所述缺口 312:1。 所述缺口 3121位于所述非显示区 12。 所述柔性电路板 313 位于所述触控层 311上。 柔性电路 313—部分位于缺口 3121中, 另一部分位于缺口 3121的 外部, 换句话说, 柔性电路 3 D—端位于所述缺口 3121中, 并丛所述缺口 3121的底部向外 延伸至所述缺口 3121的外部。柔性电路板 313与触控层 311电连接。所述第一贴合层 314位 于所述柔性电路板 313与所述偏光片 312上。所述玻璃盖板 315位于所述第一贴合层 314上。
这样, 通过在偏光片的下边缘设置缺口, 并将触控层的柔性电路板设置在缺 P内, 然后 在柔性电路板与偏光片上覆盖贴合层, 可以减小贴合时的段差, 避免气泡的产生。 而 ii, 避 免了偏光片与触控层交叠导致的偏光片翘曲 避免了偏光片与触控层贴合时出现接触面存在 凸面的现象。
需要说明的是, 在本申请实施例中, 以显示面板〗 的顶端为上, 底端为下。 其中, 显示 面板 1的显示区 n中靠近顶端的位置可设置第二显示区 A2, 如图 i所示。
如图 4所示, 所述封装层还可包括油墨层 316。 所述油墨层 316位于所述非显示区 12的 所述第一贴合层 314上, 且位置与所述柔性电路板 313的位置相对。 所述油墨层 316的上表 面与所述显示区 11中的第一贴合层 314的上表面齐平。这样, 可以通过增加油墨层的厚度将 缺口处第一贴合层与柔性电路板压合, 充分填补段差, 丛而避免全贴合过程中气泡的产生。
具体地, 如图 4所示, 所述柔性电路板 313的下表面与所述油墨层 316的上表面之间的 距离为第一距离,显示区 11中的所述偏光片 312的下表面至第一贴合层 314的上表面之间距 离为第二距离, 第 ·距离与第二距离相同。
所述显示面板 1还可包括第二贴合层(未示出), 所述第二贴合层位于所述触控层 3 U与 所述偏光片 312之间。
所述第一贴合层的材料可为光学透明胶。
所述第二贴合层的材料也可为光学透明胶。
本申请的实施例还提出了一种显示装置。 该显示装置包括: 设备本体以及上述任一实施 例所述的显示面板。 所述显示面板覆盖在所述设备本体上。
设备本体具有器件区。 所述器件区位于所述第二显示区的后方, 且所述器件区包括透过 所述第二显示区发射或者采集光线的感光器件。
所述感光器件包括下述至少之一: 摄像头、 光线感应器、 光线发射器。
本实施例的有益效杲是: 由于显示面板上位于第二显示区的反射层的厚度小于位于第一 显示区的反射层的厚度; 因此, 使得第二显示区的透光率大于第 ·显示区的透光率, 从而可 使得第二显示区后方可设置感光器件, 有利于提高屏占比, 且 1可使位于第二显示区后方的感 光器件能够接收到足够的光线, 以保证感光器件可正常工作。
需要说明的是, 本实施例中的显示装置可以为: 电子纸、 手机、 平板电脑、 电视机、 笔 记本电脑、 数码相框、 导航汶等任何具有显示功能的产品或部件。
应当理解的是, 本申请并不局限于上面己经描述并在附图中示出的精确结构, 并且可以 在不脱离其范围进行各种修改和改变。 本申请的范围仅由所酎的权利要求来限制。
Claims
1. 一种显示面板, 包括:
显示区, 所述显示区包括第一显示区和第二显示区 = 所述第二显示区的透光率大于所述 第一显示区的透光率;
衬底, 位于所述第一显示区与所述第二显示区;
阳极层, 位于所述第一显示区与所述第二显示区; 所述阳极层位于所述衬底上, 所述阳 极层包括反射层, 位于所述第二显示区的反射层的厚度小于位予所述第一显示区的反射层的 厚度;
发光层, 位于所述第一显示区与所述第二显示区; 所述发光层位于所述 极层上; 和 阴极层, 位于所述第一显示区与所述第二显示区, 所述阴极层位于所述发光层上。
2. 根据权利要求 1所述的显示面板, 其中, 所述反射层的材料为金属。
3. 根据权利要求 2所述的显示面板, 其中, 所述反射层的材料为银。
4. 根据权利要求 2所述的显示面板, 其中, 所述第一显示区中所述反射层的厚度范围为 600-1200埃米, 所述第二显示区中所述反射层的厚度范围为 20〜 100埃米。
5. 根据权利要求 1所述的显示面板; 其中, 所述阳极层还包括第一透明导电层与第二透 明导电层; 所述反射层位于所述第一透明导电层与所述第二透明导电层之间。
6. 根据权利要求 5所述的显示面板, 其中, 所述第一透明导电层的材料为氧化铟锡或氧 化铟锌; 和 /或所述第二透明导电层的衬料为氧化铟锡或氧化铟锌。
7. 根据权利要 5所述的显示面板, 其中, 位于所述第二显示区的所述阳极层与位于所述 第-一显示区的所述阳极层不连续。
8. 根据权利要求 7所述的显示面板, 其中, 位于所述第二显示区的所述阳极层与位于所 述第一显示区的所述阳极层之间包括像素定义层。
9. 根据权利要求 1所述的显示面板, 其中, 位于所述第二显示区的所述阴极层的厚度小 于位于所述第一显示区的所述阴极层的厚度。
10. 根据权利要求 9所述的显示面板, 其中, 位于所述第二显示区的所述反射层的厚度 大于或者等于位于所述第二显示区的所述阴极层的厚度。
11 . 根据权利要求 10所述的显示面板, 其中, 所述阴极层的材料为镁银合金; 所述阴极层中镁的质量与银的质量的比例范围为 1 :4-1 :20;
位于所述第一显示区的所述阴极层的厚度范围为 80-150埃米,位于所述第二显示区的所
述阴极层的厚度范围为 20〜 60埃米。
12. 根据权利要求 1所述的显示面板; 还包括电子注入层; 所述电子注入层位干所述阴 极层与所述发光层之间;
所述电子注入层的材料包括镁、 钾、 锂、 铯中的至少一种以及银。
13。 根据权利要求 12所述的显示面板, 其中; 所述电子注入层的材料为镁银合金; 所述 电子注入层中镁的质量与银的质量的比例范围为 4: 1〜 20: 1。
14. 根据权利要求 1所述的显示面板, 还包括封装层, 所述封装层位于所述阴极层上; 所述衬底包括第一衬底及第二衬底, 所述第一衬底位于第一显示区, 第二衬底位于第二 显示区, 所述第二衬底的透光率大于第一衬底的透光率。
15 根据权利要求 14所述的显示面板所述第二衬底的厚度小于所述第一衬底的厚度; 所述第二衬底包括第一有机层和位于所述第一有机层上的第一无机层, 所述第一衬底包 括由下至上依次交叠的第二有机层、 第二无机层、 第三有机层和第三无机层, 所述第一有机 层与所述第三有机层为 ·体结构, 所述第一无机层与所述第三无机层为一体结构, 所述第一 有机层的厚度小于所述第:三有机层的厚度, 所述第一无机层的厚度等于所述第三无机层的厚 度。
16。 根据权利要求 14所述的显示面板, 其中, 所述第二衬底的透光率大干 50%;
所述第一衬底的透光率为 30%〜 60% ;
所述第一显示区与所述第二显示区为有源矩阵有机发光二极管显示区。
17. 根据权利要求 1所述的显示面板, 所述显示面板还包括驱动电路层, 所述驱动电路 层位于所述軻底与所述阳极层之间;
位于所述第一显示区的驱动电路层包括多个第一驱动电路单元, 所述第 ·驱动电路单元 包括晶体管及存储电容; 位于所述第二显示区的驱动电路层包括多个第二驱动电路单元, 所 述第二驱动电路单元包括存储电容及晶体管, 所述第二驱动电路单元的晶体管的数量小于所 述第一驱动电路单元的晶体管的数量。
18. 根据权利要求 i所述的显示面板, 还包括围绕所述显示区的非显示区; 所述封装层 包括: 触控层、 偏光片、 柔性电路板、 第一贴合层以及玻璃盖板;
所述触控层位于所述阴极层上, 所述偏光片位于所述触控层上, 所述偏光片的下边缘设 有缺口; 所述缺口位于所述非显示区;
所述柔性电路板位于所述触控层上, 所述柔性电路一部分位子所述缺口中, 另一部分位 于所述缺口的外部;
所述第一贴合层位于所述柔性电路板与所述偏光片上; 所述玻璃盖板位于所述第一贴合 层上。
19. 根据权利要求 18所述的显示面板, 其中, 所述封装层还包括油墨层; 所述油墨层位 于所述非显示区的所述第一贴合层上, 且位置与所述柔性电路板的位置相对; 所述油墨层的 上表面与所述显示区中的第一贴合层的上表面齐平;
所述柔性电路板的下表面与所述油墨层的上表面之间的距离为第一距离; 所述显示区中 的所述偏光片的下表面至所述第一贴合层的上表 M之间距离为第二距离; 所述第一距离与所 述第二距离相同;
所述显示面板还包括第二蛄合层; 所述第二蛄合层位于所述触控层与所述偏光片之间; 所述第 ·贴合层的材料为光学透明胶; 和 /或
所述第二贴合层的材料为光学透明胶。
20. 一种显示装置, 包括:
设备本体, 具有器件区;
如权利要求 1至 19任一项所述的显示面板, 所述显示面板覆盖在所述设备本体上; 其中, 所述器件区位于所述第二显示区的背部, 且所述器件区包括透过所述第二显示区 发射或者采集光线的感光器件。
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CN111524460B (zh) * | 2020-04-26 | 2021-10-01 | 武汉华星光电半导体显示技术有限公司 | 显示面板、掩膜板和显示面板的制作方法 |
CN111584566A (zh) * | 2020-05-11 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | 显示面板及其制作方法、掩模版组 |
CN111584725A (zh) | 2020-05-15 | 2020-08-25 | 武汉华星光电半导体显示技术有限公司 | Oled的面板及其制造方法 |
CN112002253B (zh) * | 2020-08-24 | 2022-10-14 | 昆山国显光电有限公司 | 显示面板、显示面板的制作方法和显示装置 |
CN112582348B (zh) * | 2020-12-10 | 2022-11-25 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及其制备方法 |
WO2022155857A1 (zh) * | 2021-01-21 | 2022-07-28 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
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