WO2020226119A1 - Circuit haute fréquence et dispositif de communication - Google Patents

Circuit haute fréquence et dispositif de communication Download PDF

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Publication number
WO2020226119A1
WO2020226119A1 PCT/JP2020/018263 JP2020018263W WO2020226119A1 WO 2020226119 A1 WO2020226119 A1 WO 2020226119A1 JP 2020018263 W JP2020018263 W JP 2020018263W WO 2020226119 A1 WO2020226119 A1 WO 2020226119A1
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Prior art keywords
terminal
transmission
high frequency
circuit
signal
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PCT/JP2020/018263
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English (en)
Japanese (ja)
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基嗣 津田
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株式会社村田製作所
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Publication of WO2020226119A1 publication Critical patent/WO2020226119A1/fr

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

Definitions

  • the present invention relates to a high frequency circuit and a communication device including the high frequency circuit.
  • Patent Document 1 discloses a configuration of a high-frequency circuit capable of simultaneously transmitting high-frequency signals in different frequency bands.
  • the present invention has been made to solve the above problems, and the occurrence of intermodulation distortion is suppressed when a plurality of high-frequency signals amplified by a plurality of power amplifiers are simultaneously transmitted. It is an object of the present invention to provide a high frequency circuit and a communication device.
  • the high frequency circuit comprises a high frequency signal of the first communication band and a high frequency signal of the second communication band whose frequency at least partially overlaps with the first communication band.
  • a first transmission circuit having a first terminal and a second terminal and outputting a high frequency signal of the first communication band from the first terminal, and a third terminal, which are high frequency circuits capable of transmitting at the same time.
  • a second transmission circuit having a fourth terminal and outputting a high frequency signal of the second communication band from the third terminal, and the first transmission circuit is further input from the second terminal.
  • the second transmission circuit further comprises a first power amplifier that amplifies a high frequency signal and an isolator arranged on a signal path between the output end of the first power amplifier and the first terminal.
  • the second power amplifier that amplifies the high frequency signal input from the fourth terminal is provided.
  • the present invention it is possible to provide a high frequency circuit and a communication device in which the occurrence of intermodulation distortion is suppressed when a plurality of high frequency signals amplified by a plurality of power amplifiers are simultaneously transmitted.
  • FIG. 1 is a circuit configuration diagram of a high frequency circuit and a communication device according to an embodiment.
  • FIG. 2 is a diagram showing a circuit state when two transmission signals are simultaneously transmitted in the high frequency circuit according to the embodiment.
  • FIG. 3A is a diagram showing a first frequency relationship between the first communication band and the second communication band.
  • FIG. 3B is a diagram showing a second frequency relationship between the first communication band and the second communication band.
  • FIG. 4 is a schematic diagram showing an example of the frequency relationship between the high frequency signal of 4G-LTE, the high frequency signal of 5G-NR, and the intermodulation distortion.
  • FIG. 5 is a circuit configuration diagram of the high frequency circuit and the communication device according to the first modification of the embodiment.
  • FIG. 6 is a circuit configuration diagram of the high frequency circuit and the communication device according to the second modification of the embodiment.
  • FIG. 1 is a circuit configuration diagram of a high frequency circuit 1 and a communication device 5 according to an embodiment.
  • the communication device 5 includes a high frequency circuit 1, an antenna circuit 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.
  • RFIC RF signal processing circuit
  • BBIC baseband signal processing circuit
  • the antenna circuit 2 has antennas 2a and 2b.
  • the antenna 2a is an example of the first antenna, is connected to the transmission / reception terminal 110 of the high frequency circuit 1, and radiates and receives a high frequency signal including the frequency of the first communication band.
  • the antenna 2b is an example of the second antenna, is connected to the transmission / reception terminal 210 of the high frequency circuit 1, and radiates and receives a high frequency signal including the frequency of the second communication band.
  • the antenna circuit 2 may not have two antennas 2a and 2b, and may be composed of only one antenna. That is, the antenna 2a and the antenna 2b may be the same antenna. In this case, the one antenna is connected to both the transmission / reception terminals 110 and 210 of the high frequency circuit 1.
  • RFIC3 is an RF signal processing circuit that processes high frequency signals. Specifically, the RFIC 3 processes the transmission signal input from the BBIC 4 by up-conversion or the like, and outputs the high-frequency transmission signal generated by the signal processing to the high-frequency circuit 1. Further, the RFIC 3 has a control unit that outputs a control signal for controlling the connection switching of the switches 12 and 22 included in the high frequency circuit 1 to the switches 12 and 22.
  • the BBIC 4 is a circuit that processes a signal using an intermediate frequency band having a lower frequency than the high frequency signal propagating in the high frequency circuit 1.
  • the signal processed by the BBIC 4 is used, for example, as an image signal for displaying an image, or as a voice signal for a call via a speaker.
  • the BBIC 4 may have the above control unit. Further, the control unit may be included in the communication device 5 other than the RFIC 3 and the BBIC 4.
  • the high frequency circuit 1 includes a transmission circuit 10 and a transmission circuit 20.
  • the transmission circuit 10 is an example of a first transmission circuit, and is an example of a transmission / reception terminal 110, a transmission terminal 120, a reception terminal 130, a filter 11, a switch 12, a power amplifier 13, a low noise amplifier 14, and an isolator 15. And have.
  • the transmission / reception terminal 110 is an example of the first terminal
  • the transmission terminal 120 is an example of the second terminal
  • the reception terminal 130 is an example of the fifth terminal.
  • the power amplifier 13 is an example of a first power amplifier, and is a transmission amplifier that amplifies a high-frequency transmission signal input from the transmission terminal 120.
  • the switch 12 is an example of the first switch, has a common terminal 12a (first common terminal), a selection terminal 12b (first selection terminal), and a selection terminal 12c (second selection terminal), and is selected from the common terminal 12a.
  • the connection with the terminal 12b and the connection between the common terminal 12a and the selection terminal 12c are switched.
  • the switch 12 is, for example, a SPDT (Single Pole Double Throw) type switch circuit.
  • the filter 11 is an example of a first filter having a first communication band as a pass band, and is connected between the common terminal 12a and the transmission / reception terminal 110.
  • the filter 11 may be arranged on a signal path connecting the output terminal of the power amplifier 13 and the transmission / reception terminal 110.
  • the low noise amplifier 14 is an example of the first low noise amplifier, and is a reception amplifier connected between the selection terminal 12c and the reception terminal 130 to amplify the high frequency reception signal input from the transmission / reception terminal 110.
  • the isolator 15 is connected between the power amplifier 13 and the selection terminal 12b.
  • the isolator 15 has a characteristic of passing a high frequency signal of the first communication band in the direction from the power amplifier 13 to the transmission / reception terminal 110 and attenuating the high frequency signal of a predetermined frequency band in the direction from the transmission / reception terminal 110 to the power amplifier 13. doing.
  • the predetermined frequency band is an overlapping band of the first communication band and the second communication band.
  • the transmission circuit 10 outputs a high-frequency transmission signal of the first communication band from the transmission / reception terminal 110 in a state where the common terminal 12a and the selection terminal 12b are connected, and the common terminal 12a and the selection terminal 12c are connected to each other. In the connected state, the high frequency reception signal of the first communication band is output from the reception terminal 130. That is, the transmission circuit 10 executes the transmission of the high frequency signal and the reception of the high frequency signal by the switching operation of the switch 12 in a time division duplex (TDD: Time Division Duplex) system.
  • TDD Time Division Duplex
  • the transmission circuit 10 may be a circuit that transmits a high frequency signal and does not receive the high frequency signal. That is, the transmission circuit 10 does not have to include the low noise amplifier 14, the switch 12, and the receiving terminal 130.
  • the isolator 15 may be arranged on the signal path connecting the output terminal of the power amplifier 13 and the transmission / reception terminal 110, and in particular, is arranged between the transmission / reception terminal 110 and the filter 11. Is desirable. Further, the transmission circuit 10 does not have to have the filter 11.
  • the transmission circuit 20 is an example of a second transmission circuit, and includes a transmission / reception terminal 210, a transmission terminal 220, a reception terminal 230, a filter 21, a switch 22, a power amplifier 23, and a low noise amplifier 24. doing.
  • the transmission / reception terminal 210 is an example of the third terminal, and the transmission terminal 220 is an example of the fourth terminal.
  • the power amplifier 23 is an example of a second power amplifier, and is a transmission amplifier that amplifies a high-frequency transmission signal input from the transmission terminal 220.
  • the switch 22 has a common terminal 22a, selection terminals 22b and 22c, and switches the connection between the common terminal 22a and the selection terminal 22b and the connection between the common terminal 22a and the selection terminal 22c.
  • the switch 22 is, for example, a SPDT type switch circuit.
  • the filter 21 is an example of a second filter having a second communication band as a pass band, and is connected between the common terminal 22a and the transmission / reception terminal 210.
  • the filter 21 may be arranged on a signal path connecting the output end of the power amplifier 23 and the transmission / reception terminal 210.
  • the low noise amplifier 24 is a reception amplifier that is connected between the selection terminal 22c and the reception terminal 230 and amplifies the high frequency reception signal input from the transmission / reception terminal 210.
  • the power amplifiers 13 and 23 and the low noise amplifiers 14 and 24 are, for example, a Si-based CMOS (Complementary Metal Oxide Sensor), a field effect transistor (FET) made of GaAs, or a heterobipolar transistor (HBT). It is composed of.
  • CMOS Complementary Metal Oxide Sensor
  • FET field effect transistor
  • HBT heterobipolar transistor
  • the transmission circuit 20 outputs a high-frequency transmission signal of the second communication band from the transmission / reception terminal 210 in a state where the common terminal 22a and the selection terminal 22b are connected, and the common terminal 22a and the selection terminal 22c are connected. In the state, the high frequency reception signal of the second communication band is output from the reception terminal 230. That is, the transmission circuit 20 executes the transmission of the high frequency signal and the reception of the high frequency signal by the switching operation of the switch 22 by the time division duplex (TDD) method.
  • TDD time division duplex
  • the transmission circuit 20 may be a circuit that transmits a high frequency signal and does not receive the high frequency signal. That is, the transmission circuit 20 does not have to include the low noise amplifier 24, the switch 22, and the receiving terminal 230. Further, the transmission circuit 20 does not have to have the filter 21.
  • the high frequency circuit 1 may be composed of one module, and for example, the transmission circuits 10 and 20 may be mounted in one mounting board or one package.
  • transmission circuits 10 and 20 may be composed of individual modules.
  • the frequency of the second communication band overlaps with that of the first communication band at least partially.
  • the high frequency signal of the first communication band can be transmitted from the transmission circuit 10, and at the same time, the high frequency signal of the second communication band can be transmitted from the transmission circuit 20. It becomes.
  • the transmission circuit 10 transmits, for example, a high frequency signal of the first communication band in the first communication system, and the transmission circuit 20 is different from, for example, the first communication system.
  • the high frequency signal of the second communication band in the two communication systems may be transmitted.
  • FIG. 2 is a diagram showing a circuit state when two transmission signals are simultaneously transmitted in the high frequency circuit 1 according to the embodiment.
  • the first communication system is, for example, a fifth generation mobile communication system (5G)
  • the second communication system is, for example, a fourth generation mobile communication system (4G).
  • the first communication system may be 4G and the second communication system may be 5G.
  • the high frequency circuit 1 is connected to the high frequency signal of the first communication band.
  • the high frequency signal of the second communication band can be transmitted at the same time.
  • the high frequency signal of the second communication band output from the transmission / reception terminal 210 of the transmission circuit 20 is the antenna 2b and the antenna 2a. It is assumed that the signal flows from the transmission / reception terminal 110 into the transmission circuit 10 via the above.
  • Intermodulation distortion (hereinafter sometimes referred to as IMD) is generated by the high frequency signal of the first communication band.
  • IMD Intermodulation distortion
  • the high frequency circuit 1 even if the high frequency signal of the second communication band output from the transmission / reception terminal 210 of the transmission circuit 20 flows into the transmission circuit 10, the power amplifier 13
  • the isolator 15 arranged between the output terminal and the transmission / reception terminal 110 can prevent the inflowing high frequency signal of the second communication band from reaching the power amplifier 13. Therefore, the intermodulation distortion generated by the interaction between the high frequency signal of the second communication band flowing into the transmission circuit 10 and the high frequency signal of the first communication band output from the power amplifier 13 can be suppressed. Therefore, deterioration of the signal quality of the high frequency signal of the first communication band output from the transmission circuit 10 can be suppressed. That is, it is possible to provide the high frequency circuit 1 in which the occurrence of intermodulation distortion is suppressed when a plurality of high frequency signals amplified by a plurality of power amplifiers are simultaneously transmitted.
  • the intermodulation distortion generated by the interaction between the 4G high frequency transmission signal and the 5G high frequency transmission signal can be suppressed. Therefore, the coexistence standard of 4G service and 5G service can be satisfied.
  • FIG. 3A is a diagram showing the first frequency relationship between the first communication band and the second communication band.
  • the first communication band and the second communication band may have the same frequency range.
  • the first communication band is, for example, 5G-NR n41 (band: 2494 to 2690 MHz)
  • the second communication band is, for example, 4G-LTE Band 41 (band: 2494 to 2690 MHz).
  • the pass band of the filter 11 is n41 of 5G-NR
  • the pass band of the filter 21 is Band 41 of 4G-LTE. That is, the pass bands of the filters 11 and 21 are the same.
  • the overlapping band between the first communication band and the second communication band covers the entire area of n41 and Band41. Therefore, in the case of this frequency relationship, the isolator 15 passes high frequency signals in the frequency bands of n41 and Band41 in the direction from the power amplifier 13 to the transmission / reception terminal 110, and the direction from the transmission / reception terminal 110 to the power amplifier 13. Has the property of attenuating high-frequency signals in the frequency bands of n41 and Band41.
  • FIG. 4 is a schematic diagram showing an example of the frequency relationship between a 4G-LTE high-frequency signal, a 5G-NR high-frequency signal, and intermodulation distortion.
  • the transmission circuit 10 transmits the high frequency signal of n41 of 5G-NR and the transmission circuit 20 transmits the high frequency signal of Band 41 of 4G-LTE ( The state of occurrence of the third-order intermodulation distortion of EN-DC) is shown.
  • the first transmission signal for transmitting the transmission circuit 10 is the signal of the first channel of n41 (first communication band) of 5G-NR
  • the second transmission signal for transmitting the transmission circuit 20 is 4G.
  • -It is a signal of the second channel of Band 41 (second communication band) of LTE.
  • the center frequency of the first channel of n41 of 5G-NR and the second channel of Band41 of 4G-LTE are different. That is, the first transmission signal is the transmission signal of the first channel in the first communication band defined by 5G, and the second transmission signal is the transmission of the second channel in the second communication band defined by 4G. It is a signal.
  • the first communication band and the second communication band have the same frequency range.
  • the intensity of the 5G high-frequency transmission signal output from the power amplifier 13 is 27 dBm and the propagation loss in the filter 11 is 4 dB
  • the intensity of the high-frequency transmission signal radiated from the antenna 2a is 23 dBm.
  • the intensity of the 4G high-frequency transmission signal output from the power amplifier 23 is 27 dBm and the propagation loss at the filter 21 is 4 dB
  • the intensity of the high-frequency transmission signal radiated from the antenna 2b is 23 dBm. It becomes.
  • the isolation between the antennas 2a and 2b is 10 dB
  • intermodulation distortion occurs in the transmission circuit 10 due to the 5G high frequency transmission signal (intensity 23 dBm) and the wraparound 4G high frequency transmission signal (intensity 13 dBm). To do.
  • the first channel (first frequency f1) of n41 of 5G-NR is the channel on the low frequency side of n41
  • the second channel (second frequency f2) of Band 41 of 4G-LTE is Band 41.
  • third-order intermodulation distortion IMD 3L frequency: 2f1-f2
  • IMD 3H frequency: 2f2-f1
  • the third-order intermodulation distortion IMD 3L overlaps with, for example, the band 30 or 40 of 4G-LTE.
  • the high-frequency circuit 1 includes a circuit that transmits or receives a high-frequency signal of Band 30 or Band 40 of 4G-LTE, or if the circuit is arranged in the vicinity of the high-frequency circuit 1, the above-mentioned third-order intermodulation If the distorted IMD 3L exceeds the reference value in 3GPP, the coexistence standard of 4G service and 5G service cannot be satisfied, and the signal quality in the circuit deteriorates.
  • the intermodulation distortion generated by the 5G high-frequency transmission signal and the wraparound 4G high-frequency transmission signal is not limited to the third-order intermodulation distortion.
  • the isolator 15 is arranged in the transmission circuit 10, intermodulation generated by the interaction between the high-frequency transmission signal of 5G and the high-frequency transmission signal of 4G Distortion can be suppressed. Therefore, the coexistence standard of 4G service and 5G service can be satisfied.
  • FIG. 3B is a diagram showing a second frequency relationship between the first communication band and the second communication band.
  • the frequencies of the first communication band and the second communication band do not have to completely overlap.
  • the first communication band is, for example, 5G-NR nX (bands: fx1 to fx2)
  • the second communication band is, for example, 4G-LTE BandY (bands: fy1 to fy2). Is.
  • the overlapping band between the first communication band and the second communication band is phy1 to fx2.
  • the isolator 15 passes high frequency signals in the nX frequency band (fx1 to fx2) in the direction from the power amplifier 13 to the transmission / reception terminal 110, and the power amplifier 13 from the transmission / reception terminal 110. In the direction toward, it is sufficient that it has a characteristic of attenuating high frequency signals in a frequency band including overlapping bands (fy1 to fx2).
  • the high-frequency circuit according to the present invention may include only the transmission circuit 10 among the transmission circuits 10 and 20 included in the high-frequency circuit 1 according to the embodiment. That is, in the high frequency circuit according to the present invention, at least a part of the frequency range of the first communication band of the first communication system and the frequency range of the second communication band of the second communication system different from the first communication system overlap.
  • a high-frequency circuit used in a signal transmission system capable of simultaneously transmitting a high-frequency signal of the first communication band and a high-frequency signal of the second communication band, the high-frequency circuit includes a transmission / reception terminal 110 and a transmission terminal.
  • It has 120, a power amplifier 13 that amplifies a high-frequency signal input from the transmission terminal 120, and an isolator 15 arranged on a signal path between the output end of the power amplifier 13 and the transmission / reception terminal 110, and has power.
  • the high frequency signal of the first communication band amplified by the amplifier 13 can be output from the transmission / reception terminal 110.
  • the first communication system may be 5G out of 4G and 5G.
  • EN-DC which simultaneously transmits a high-frequency signal in the 4G-LTE communication band and a high-frequency signal in the 5G-NR communication band
  • the power value of the 5G high-frequency transmission signal is smaller than the power value of the 4G high-frequency transmission signal. .. Therefore, in EN-DC, the signal quality of the 5G high-frequency transmission signal is more likely to deteriorate due to intermodulation distortion.
  • the isolator 15 is arranged in the transmission circuit that transmits the 5G high frequency signal, the coexistence standard of 4G service and 5G service can be efficiently satisfied.
  • the high frequency circuit 1 has a transmission / reception terminal 110 and a transmission terminal 120, and has a transmission circuit 10 for outputting a high frequency signal of the first communication band from the transmission / reception terminal 110, and a transmission / reception terminal 210 and a transmission terminal 220.
  • a transmission circuit 20 that outputs a high-frequency signal of a communication band from a transmission / reception terminal 210 is provided.
  • the transmission circuit 20 further includes a power amplifier 23 that amplifies a high frequency signal input from the transmission terminal 220. Further, the transmission circuit 10 further includes a power amplifier 13 that amplifies a high-frequency signal input from the transmission terminal 120, and an isolator 15 arranged on a signal path between the output terminal of the power amplifier 13 and the transmission / reception terminal 110. , Can have.
  • the high frequency signal of the second communication band output from the transmission / reception terminal 210 of the transmission circuit 20 flows into the transmission circuit 10, the high frequency signal of the second communication band flowing in by the isolator 15 reaches the power amplifier 13. You can prevent that. Therefore, it is possible to suppress the intermodulation distortion generated by the interaction between the high frequency signal of the second communication band flowing into the transmission circuit 10 and the high frequency signal of the first communication band output from the power amplifier 13, and output from the transmission circuit 10. It is possible to suppress deterioration of the signal quality of the high frequency signal of the first communication band.
  • the frequency range of the first communication band and the frequency range of the second communication band overlap at least partially, and the transmission circuit 10 has a high frequency of the first communication system.
  • the signal is transmitted, and the transmission circuit 20 can transmit a high frequency signal of a second communication system different from the first communication system.
  • the high frequency circuit 1 can simultaneously transmit the first transmission signal of the first communication band and the second transmission signal of the second communication band, and the first communication band.
  • the second communication band have the same frequency range
  • the first transmission signal is the transmission signal of the first channel in the first communication band defined by the first communication system
  • the second transmission signal is the second transmission signal.
  • the transmission signal of the second channel having a frequency different from that of the first channel in the second communication band defined by the two communication systems may be used.
  • the isolator 15 outputs the high frequency signal of the second communication band that has flowed into the transmission circuit 10 from the power amplifier 13.
  • Mutual modulation distortion generated by interaction with the high frequency signal of the first communication band can be suppressed, and deterioration of the signal quality of the high frequency signal of the first communication band output from the transmission circuit 10 can be suppressed.
  • one of the first communication system and the second communication system may be 5G, and the other of the first communication system and the second communication system may be 4G.
  • the high frequency transmission signal corresponding to 4G and the high frequency transmission signal corresponding to 5G can be used.
  • the generated intermodulation distortion can be suppressed below the reference value. Therefore, the coexistence standard of 4G service and 5G service can be satisfied.
  • the isolator 15 passes a high frequency signal of the first communication band in the direction from the power amplifier 13 to the transmission / reception terminal 110, and has a predetermined frequency in the direction from the transmission / reception terminal 110 to the power amplifier 13. It has a characteristic of attenuating high-frequency signals in the band, and the predetermined frequency band may be a band including an overlapping band of the frequency range of the first communication band and the frequency range of the second communication band.
  • the transmission circuit 10 further includes a filter 11 having a first communication band as a pass band, which is arranged between the output terminal of the power amplifier 13 and the transmission / reception terminal 110 for transmission.
  • the circuit 20 may further include a filter 21 having a second communication band as a pass band, which is arranged between the output terminal of the power amplifier 23 and the transmission / reception terminal 210.
  • the noise component of the high frequency signal of the first communication band output from the transmission circuit 10 can be reduced, and the noise component of the high frequency signal of the second communication band output from the transmission circuit 20 can be reduced.
  • the signal quality of the high frequency transmission signal output from 1 can be improved.
  • the transmission circuit 10 further includes a receiving terminal 130, a common terminal 12a, a selection terminal 12b and 12c, and a connection between the common terminal 12a and the selection terminal 12b and a common terminal. It has a switch 12 for switching the connection between the selection terminal 12a and the selection terminal 12c, and a low noise amplifier 14 connected between the selection terminal 12c and the reception terminal 130.
  • the isolator 15 has the selection terminal 12b and the power amplifier 13. Connected in between, the common terminal 12a can be connected to the filter 11.
  • the intermodulation distortion generated by the interaction between the high frequency signal of the second communication band flowing into the TDD transmission circuit 10 and the high frequency signal of the first communication band output from the power amplifier 13 can be suppressed and transmitted.
  • Deterioration of signal quality of the high frequency signal of the first communication band output from the circuit 10 can be suppressed.
  • the high frequency circuit has at least a frequency range of the first communication band of the first communication system and a frequency range of the second communication band of the second communication system different from the first communication system. It is a high-frequency circuit used in a signal transmission system that partially overlaps and can simultaneously transmit a high-frequency signal in the first communication band and a high-frequency signal in the second communication band, and the high-frequency circuit is a transmission / reception terminal.
  • the high frequency signal of the first communication band amplified by the power amplifier 13 can be output from the transmission / reception terminal 110.
  • the first communication system may be 5G out of 4G and 5G.
  • the coexistence standard of 4G service and 5G service can be efficiently satisfied.
  • the communication device 5 has an RFIC 3 for processing a high frequency signal transmitted / received by the antenna circuit 2 and a high frequency circuit 1 for transmitting a high frequency signal between the antenna circuit 2 and the RFIC 3. Can be prepared.
  • the communication device 5 comprises an RFIC 3 that processes a high frequency signal transmitted / received by the antenna circuit 2 and a high frequency circuit 1 that transmits a high frequency signal between the antenna circuit 2 and the RFIC 3.
  • the antenna circuit 2 can have an antenna 2a connected to the transmission / reception terminal 110 and an antenna 2b connected to the transmission / reception terminal 210.
  • FIG. 5 is a circuit configuration diagram of the high frequency circuit 1A and the communication device 5A according to the first modification of the embodiment.
  • the high-frequency circuit 1A and the communication device 5A according to the present modification have different configurations of the second transmission circuit as compared with the high-frequency circuit 1 and the communication device 5 according to the embodiment.
  • the high frequency circuit 1A and the communication device 5A according to the present modification will be described mainly with different configurations, omitting description of the same configurations as the high frequency circuit 1 and the communication device 5 according to the embodiment.
  • the communication device 5A includes a high frequency circuit 1A, an antenna circuit 2, an RFIC 3, and a BBIC 4.
  • the high frequency circuit 1A includes a transmission circuit 10 and a transmission circuit 20A.
  • the transmission circuit 20A is an example of a second transmission circuit, which includes a transmission / reception terminal 210, a transmission terminal 220, a reception terminal 230, a filter 21, a switch 22, a power amplifier 23, a low noise amplifier 24, and an isolator 25. And have.
  • the transmission / reception terminal 210 is an example of the third terminal, and the transmission terminal 220 is an example of the fourth terminal.
  • the isolator 25 is connected between the power amplifier 23 and the selection terminal 22b.
  • the isolator 25 has a characteristic of passing a high frequency signal of the second communication band in the direction from the power amplifier 23 to the transmission / reception terminal 210 and attenuating the high frequency signal of a predetermined frequency band in the direction from the transmission / reception terminal 210 to the power amplifier 23.
  • the predetermined frequency band is an overlapping band of the first communication band and the second communication band.
  • the transmission circuit 20A outputs a high frequency transmission signal of the second communication band from the transmission / reception terminal 210 in a state where the common terminal 22a and the selection terminal 22b are connected, and the common terminal 22a and the selection terminal 22c are connected to each other. In the connected state, the high frequency reception signal of the second communication band is output from the reception terminal 230. That is, the transmission circuit 20A executes the transmission of the high frequency signal and the reception of the high frequency signal by the switching operation of the switch 22 by the time division duplex (TDD) method.
  • TDD time division duplex
  • the transmission circuit 20A may be a circuit that transmits a high frequency signal and does not receive the high frequency signal. That is, the transmission circuit 20A does not have to include the low noise amplifier 24, the switch 22, and the receiving terminal 230.
  • the isolator 25 may be arranged on the signal path connecting the output terminal of the power amplifier 23 and the transmission / reception terminal 210, and in particular, the isolator 25 is arranged between the transmission / reception terminal 210 and the filter 21. Is desirable. Further, the transmission circuit 20A does not have to have the filter 21.
  • the frequency of the second communication band overlaps with that of the first communication band at least partially.
  • the high frequency signal of the first communication band can be transmitted from the transmission circuit 10
  • the high frequency signal of the second communication band can be transmitted from the transmission circuit 20A. It becomes.
  • the output end of the power amplifier 13 The isolator 15 arranged between the transmission / reception terminal 110 can prevent the inflowing high frequency signal of the second communication band from reaching the power amplifier 13. Therefore, it is possible to suppress intermodulation distortion generated by the interaction between the high frequency signal of the second communication band and the high frequency signal of the first communication band output from the power amplifier 13.
  • the output end of the power amplifier 23 The isolator 25 arranged between the transmission / reception terminal 210 can prevent the inflowing high frequency signal of the first communication band from reaching the power amplifier 23. Therefore, it is possible to suppress the intermodulation distortion generated by the interaction between the high frequency signal of the first communication band and the high frequency signal of the second communication band output from the power amplifier 23.
  • FIG. 6 is a circuit configuration diagram of the high frequency circuit 1B and the communication device 5B according to the second modification of the embodiment.
  • the high-frequency circuit 1B and the communication device 5B according to the present modification have different configurations of the first transmission circuit as compared with the high-frequency circuit 1 and the communication device 5 according to the embodiment.
  • the same configurations as the high frequency circuit 1 and the communication device 5 according to the embodiment will be omitted, and different configurations will be mainly described.
  • the communication device 5B includes a high frequency circuit 1B, an antenna circuit 2, RFIC3, and BBIC4.
  • the high frequency circuit 1B includes a transmission circuit 10B and a transmission circuit 20.
  • the transmission circuit 10B is an example of the first transmission circuit, and includes a transmission / reception terminal 110, a transmission terminal 120, a reception terminal 130, a duplexer 16, a power amplifier 13, a low noise amplifier 14, and an isolator 15. doing.
  • the power amplifier 13 is an example of a first power amplifier, and is a transmission amplifier that amplifies a high-frequency transmission signal input from the transmission terminal 120.
  • the duplexer 16 is an example of a first filter having a first communication band as a pass band, a transmission filter 16T having a transmission band of the first communication band as a pass band, and a reception band of the first communication band as a pass band. It is composed of a receiving filter 16R. The output end of the transmission filter 16T and the input end of the reception filter 16R are connected to the transmission / reception terminal 110.
  • the low noise amplifier 14 is an example of the first low noise amplifier, and is a reception amplifier connected between the output terminal of the reception filter 16R and the reception terminal 130 to amplify the high frequency reception signal input from the transmission / reception terminal 110. ..
  • the isolator 15 is connected between the input end of the transmission filter 16T and the power amplifier 13.
  • the isolator 15 has a characteristic of passing a high frequency signal of the first communication band in the direction from the power amplifier 13 to the transmission / reception terminal 110 and attenuating the high frequency signal of a predetermined frequency band in the direction from the transmission / reception terminal 110 to the power amplifier 13. doing.
  • the predetermined frequency band is an overlapping band of the first communication band and the second communication band.
  • the transmission circuit 10B outputs a high-frequency transmission signal in the transmission band of the first communication band from the transmission / reception terminal 110, and at the same time outputs a high-frequency reception signal in the reception band of the first communication band from the reception terminal 130. That is, the transmission circuit 10B executes the transmission of the high-frequency signal and the reception of the high-frequency signal by the frequency division duplex (FDD: Frequency Division Duplex) method.
  • FDD Frequency Division Duplex
  • the transmission circuit 10B may be a circuit that transmits a high frequency signal and does not receive the high frequency signal. That is, the transmission circuit 10B does not have to include the low noise amplifier 14, the reception filter 16R, and the reception terminal 130.
  • the isolator 15 may be arranged on the signal path connecting the output terminal of the power amplifier 13 and the transmission / reception terminal 110, and in particular, is arranged between the transmission / reception terminal 110 and the transmission filter 16T. Is desirable.
  • the high frequency circuit 1B can simultaneously transmit the high frequency signal of the first communication band and the high frequency signal of the second communication band. ..
  • the high frequency signal of the second communication band output from the transmission / reception terminal 210 of the transmission circuit 20 is the antenna 2b and the antenna 2a. It is assumed that the signal flows from the transmission / reception terminal 110 into the transmission circuit 10B via the above.
  • the high frequency circuit 1B even if the high frequency signal of the second communication band output from the transmission / reception terminal 210 of the transmission circuit 20 flows into the transmission circuit 10B, the power amplifier 13
  • the isolator 15 arranged between the output terminal and the transmission / reception terminal 110 can prevent the inflowing high frequency signal of the second communication band from reaching the power amplifier 13. Therefore, it is possible to suppress intermodulation distortion generated by the interaction between the high frequency signal of the second communication band flowing into the transmission circuit 10B and the high frequency signal of the first communication band output from the power amplifier 13. Therefore, deterioration of the signal quality of the high frequency signal of the first communication band output from the transmission circuit 10B can be suppressed. That is, it is possible to provide the high frequency circuit 1B in which the occurrence of intermodulation distortion is suppressed when a plurality of high frequency signals amplified by a plurality of power amplifiers are simultaneously transmitted.
  • the transmission circuit 20 may be an FDD type circuit as well as the transmission circuit 10B. That is, in the transmission circuit 20, a duplexer may be arranged instead of the filter 21 and the switch 22.
  • the high-frequency circuit and communication device are applied to a communication system such as 3GPP as described above, and typically a 4G-LTE high-frequency signal and a 5G-NR high-frequency signal. Applies to systems that send and at the same time. For example, as a combination of the first communication band / second communication band, (1) Band 41 of 5G-NR n41 / 4G-LTE and (2) Band 71 of 5G-NR n71 / 4G-LTE mentioned in the embodiment. , (3) 5G-NR n3 / 4G-LTE Band3, and the like.
  • the high-frequency circuit and communication device are systems that simultaneously transmit a first communication band of 5G-NR / a second communication band of 4G-LTE having different frequency bands, or different. It can also be applied to a system that simultaneously transmits a first communication band of 4G-LTE and a second communication band of 4G-LTE having a frequency band.
  • the frequencies of the mutual modulation distortion caused by the two high frequency transmission signals are typically 2f Tx1- f Tx2 , 2f Tx2- f Tx1 , and f Tx1- f. Examples thereof include, but are not limited to, Tx2 and f Tx2- f Tx1 , and include those defined by mf Tx1 ⁇ nf Tx2 and mf Tx2 ⁇ nf Tx1 (m and n are natural numbers).
  • the power amplifiers 13 and 23 may be mounted on different mounting boards, or may be included in different modules. Furthermore, the power amplifiers 13 and 23 may be included in different mobile terminals.
  • the configuration when two different communication bands are used at the same time is illustrated, but the configuration of the high-frequency circuit and the communication device according to the present invention includes three or more different communication bands. It can also be applied to configurations when used at the same time. That is, the present invention also includes a high-frequency circuit or communication device having a configuration in which three or more different communication bands are used at the same time and including a high-frequency circuit or communication device configuration according to the above embodiment and a modification thereof.
  • control unit may be realized as an IC or LSI (Large Scale Integration) which is an integrated circuit.
  • the method of making an integrated circuit may be realized by a dedicated circuit or a general-purpose processor.
  • An FPGA Field Programmable Gate Array
  • reconfigurable processor that can reconfigure the connection and settings of the circuit cells inside the LSI may be used.
  • an integrated circuit technology that replaces an LSI appears due to advances in semiconductor technology or another technology derived from it, it is naturally possible to integrate functional blocks using that technology.
  • the communication system is defined by a standardization body or the like (for example, 3GPP, IEEE (Institute of Electrical and Electronics Engineers)).
  • Radio Access Technology means a communication system constructed.
  • the communication system for example, a 5G-NR system, a 4G-LTE system, a WLAN (Wireless Local Area Network) system, and the like can be used, but the communication system is not limited thereto.
  • the communication band means a frequency band defined in advance by a standardization body or the like for a communication system.
  • a 5G-NR frequency band, a 4G-LTE frequency band, and the like can be used, but the communication band is not limited thereto.
  • the present invention can be widely used in communication devices such as mobile phones as a multi-band / multi-mode compatible front-end circuit that employs a method of simultaneously transmitting high-frequency signals of different communication systems, such as EN-DC.
  • RFIC radio frequency circuit
  • BBIC Baseband signal processing circuit
  • 5A, 5B communication device 10B 20, 20A Transmission circuit 11, 21 Filter 12, 22 Switch 12a, 22a Common terminal 12b, 12c, 22b, 22c Selection terminal 13, 23 Power amplifier 14, 24 Low noise amplifier 15 , 25 Isolator 16 Duplexer 16R Receive filter 16T Transmission filter 110, 210 Transmission / reception terminal 120, 220 Transmission terminal 130, 230 Reception terminal

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)

Abstract

Selon l'invention, un circuit haute fréquence (1) est apte à transmettre simultanément un signal haute fréquence d'une première bande de communication et un signal haute fréquence d'une seconde bande de communication, la première bande de communication et la seconde bande de communication ayant des fréquences qui se chevauchent au moins partiellement. Le circuit haute fréquence (1) comprend : un circuit de transmission (10) qui délivre en sortie un signal haute fréquence de la première bande de communication à partir d'un terminal d'émission/réception (110) ; et un circuit de transmission (20) qui délivre en sortie un signal haute fréquence de la seconde bande de communication à partir d'un terminal d'émission/réception (210). Le circuit de transmission (10) comprend en outre : un amplificateur de puissance (13) pour amplifier un signal haute fréquence entré à partir d'un terminal d'émission (120), et un isolateur (15) disposé sur un trajet de signal entre une extrémité de sortie de l'amplificateur de puissance (13) et le terminal d'émission/réception (110). Le circuit de transmission (20) comprend en outre un amplificateur de puissance (23) pour amplifier un signal haute fréquence entré à partir d'un terminal d'émission (220).
PCT/JP2020/018263 2019-05-09 2020-04-30 Circuit haute fréquence et dispositif de communication WO2020226119A1 (fr)

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JP2019-089188 2019-05-09

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08195695A (ja) * 1995-01-12 1996-07-30 Murata Mfg Co Ltd アンテナ共用送受信装置
US20100226292A1 (en) * 2009-03-03 2010-09-09 Oleksandr Gorbachov Multi-channel radio frequency front end circuit with full receive diversity for multi-path mitigation
JP2015041791A (ja) * 2013-08-20 2015-03-02 シャープ株式会社 携帯端末装置
US20190090297A1 (en) * 2017-09-18 2019-03-21 T-Mobile Usa, Inc. Rffe for dual connectivity

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08195695A (ja) * 1995-01-12 1996-07-30 Murata Mfg Co Ltd アンテナ共用送受信装置
US20100226292A1 (en) * 2009-03-03 2010-09-09 Oleksandr Gorbachov Multi-channel radio frequency front end circuit with full receive diversity for multi-path mitigation
JP2015041791A (ja) * 2013-08-20 2015-03-02 シャープ株式会社 携帯端末装置
US20190090297A1 (en) * 2017-09-18 2019-03-21 T-Mobile Usa, Inc. Rffe for dual connectivity

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
3GPP: "3rd Generation Partnership Project; Technical Specification Group Radio Access Network; Evolved Universal Terrestrial Radio Access (E-UTRA); User Equipment (UE) radio transmission and reception (Release 15)", 3GPP TS 36.101 V15.6.0, April 2019 (2019-04-01), pages 41 - 43, XP051695425, Retrieved from the Internet <URL:https://www.3gpp.org/ftp/Specs/2019-03/Rel-15/36_series/36101-f60.zip> *
3GPP: "3rd Generation Partnership Project; Technical Specification Group Radio Access Network; NR; User Equipment (UE) radio transmission and reception; Part 1: Range 1 Standalone (Release 15)", 3GPP TS 38.101-1 V15.5.0, 26 March 2019 (2019-03-26), pages 16 - 17, XP051695450, Retrieved from the Internet <URL:https://www.3gpp.org/ftp/Specs/2019-03/Rel-15/38_series/38101-1-f50.zip> *

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