WO2020224234A1 - 碳化硅-金属氧化物半导体场效应晶体管sic-mosfet的驱动电路 - Google Patents

碳化硅-金属氧化物半导体场效应晶体管sic-mosfet的驱动电路 Download PDF

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WO2020224234A1
WO2020224234A1 PCT/CN2019/120556 CN2019120556W WO2020224234A1 WO 2020224234 A1 WO2020224234 A1 WO 2020224234A1 CN 2019120556 W CN2019120556 W CN 2019120556W WO 2020224234 A1 WO2020224234 A1 WO 2020224234A1
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Prior art keywords
sic
mosfet
circuit
current
resistor
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PCT/CN2019/120556
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English (en)
French (fr)
Inventor
吴鸣
宋振浩
吕志鹏
孙丽敬
季宇
李蕊
寇凌峰
郑楠
赵婷
Original Assignee
中国电力科学研究院有限公司
国家电网有限公司
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Publication of WO2020224234A1 publication Critical patent/WO2020224234A1/zh

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors

Definitions

  • This application relates to the field of driving circuits for silicon carbide-metal oxide semiconductor field effect transistors (SiC-Metal-Oxide-Semiconductor Field-Effect Transistor, SIC-MOSFET), for example, to a driving circuit for SIC-MOSFET.
  • SiC-Metal-Oxide-Semiconductor Field-Effect Transistor SIC-MOSFET
  • silicon carbide SiC has excellent electrical characteristics such as wide band gap, high breakdown electric field, high saturation drift speed and high thermal conductivity. Compared with other materials, it is more suitable for working under special conditions of high temperature, high power and high frequency.
  • the SiC-MOSTET generated from silicon carbide SiC is a unipolar voltage controlled device, which has the advantages of fast switching speed, high voltage resistance, and good thermal stability. It can work stably in harsh environments such as high temperature and high radiation.
  • SiC-MOSFET power modules have high requirements on the drive circuit, and have strict requirements on the isolation performance, fast performance, and drive capability of the drive circuit.
  • the turn-on saturation voltage drop of SiC-MOSFET is very low, and the corresponding desaturation protection circuit needs to be more sensitive.
  • the voltage value of the protection voltage needs to be lowered, and the time of the protection voltage reduction needs to be faster. Therefore, the drive circuit based on the insulated gate bipolar transistor (IGBT) design cannot meet the drive requirements of the SiC-MOSFET.
  • the present application provides a SIC-MOSFET drive circuit to solve the problem that the drive circuit based on IGBT design in the related art cannot meet the drive requirements of the SiC-MOSFET.
  • Isolation circuit current amplification module, logic module and protection circuit
  • the input terminal of the isolation circuit is connected with the input signal
  • the output terminal of the isolation circuit is connected with the input terminal of the logic module, and the isolation circuit is configured to perform signal isolation
  • the output terminal of the logic module is respectively connected to the current amplifying module and the protection circuit, and the logic module is configured to logically control the working state of the current amplifying module and the protection circuit;
  • the input terminal of the current amplification module is connected with the output terminal of the logic module, and the output terminal of the current amplification module is connected with the SiC-MOSFET, and the current amplification module is configured to amplify and convert the signal input through the logic module to meet the requirements of the SiC-MOSFET
  • the drive current ;
  • the protection circuit is connected to the SiC-MOSFET, and is configured to prevent a high-voltage pulse generated between the gate and the source of the SiC-MOSFET from causing the SiC-MOSFET to malfunction, and the drain when the SiC-MOSFET is turned off.
  • the stable turn-off of SIC-MOSFET is realized in the case of a sudden increase in voltage.
  • FIG. 1 is a schematic diagram of the structure of the driving circuit of the SIC-MOSFET provided in this application;
  • FIG. 2 is a schematic diagram of the structure of the isolation circuit provided in this application.
  • FIG. 3 is a schematic diagram of the structure of the current amplification module provided in this application.
  • FIG. 5 is a schematic structural diagram of adding a desaturation protection circuit to the Miller clamp circuit in the driving circuit provided by this application;
  • FIG. 6 is a schematic diagram of the complete structure of the driving circuit provided by this application.
  • the gate threshold voltage of SiC-MOSFET is small, it is easy to be interfered by the outside world and cause malfunction.
  • the SiC-MOSFET is turned off with a negative voltage, and the drive circuit adopts an isolated drive; in order to ensure the SiC-MOSFET switch
  • the drive circuit must be able to output a large enough drive current, and the gate-source voltage should not exceed the threshold to prevent breakdown of the gate oxide layer.
  • the embodiment of the application provides a SiC-MOSFET driving circuit, including:
  • Isolation circuit current amplification module, logic module and protection circuit
  • the input terminal of the isolation circuit is connected with the input signal
  • the output terminal of the isolation circuit is connected with the input terminal of the logic module, and the isolation circuit is configured to perform signal isolation
  • the output terminal of the logic module is respectively connected to the current amplifying module and the protection circuit, and the logic module is configured to logically control the working state of the current amplifying module and the protection circuit;
  • the input terminal of the current amplification module is connected to the output terminal of the logic module, the output terminal of the current amplification module is connected to the SiC-MOSFET, and the current amplification module is configured to amplify the signal input through the logic module And converted into a drive current that meets the requirements of the SiC-MOSFET;
  • the protection circuit is connected to the SiC-MOSFET and is configured to prevent a high-voltage pulse generated between the gate and the source of the SiC-MOSFET from causing the SiC-MOSFET to malfunction, and the SiC-MOSFET
  • the stable turn-off of the SIC-MOSFET is realized in the case of a sudden increase in the voltage of the drain during turn-off.
  • the drive circuit provided by this application provides a drive circuit for SIC-MOSFET with gate-source protection capability and stable drive signal under high frequency conditions.
  • the drive circuit has the advantages of good isolation performance, fast drive speed and strong drive capability .
  • the technical solution provided by this application has the advantages of high speed, isolation, and stability.
  • the input signal is shaped into a high-quality control signal.
  • the totem pole current amplifier circuit is used to output a driving current that meets the driving requirements.
  • the driving ability is strong and the driving time is short.
  • the drive circuit has the functions of undervoltage protection, desaturation protection, Miller clamp, etc., which makes the control of the SiC-MOSFET power module stable and safe.
  • the current amplifying module includes:
  • the current amplifying circuit is connected in series with the totem pole current amplifying circuit, and the current amplifying circuit is configured to perform a first-stage amplification of the signal output by the logic module to obtain a first-stage amplified current;
  • the totem pole current amplifying circuit is configured to perform a two-stage amplification of the first-stage amplification current to provide the SiC-MOSFET with a driving current that meets the requirements.
  • the current amplifying circuit includes:
  • the signal output by the logic module is connected to the gate of the MOS transistor Q1 and the gate of the MOS transistor Q2;
  • the source of the MOS transistor Q1 is connected to the power source VCC1 and the cathode of the diode D1;
  • the source of the MOS transistor Q2 is connected to the power source VEE1, and the anode of the diode D2 is connected to the anode of the diode D3;
  • the drains of the MOS transistor Q1 and the MOS transistor Q2 are both connected to the anode of the diode D1, the cathode of the diode D2, the cathode of the diode D3, and the input terminal of the totem pole current amplifier circuit.
  • the totem pole current amplifying circuit includes:
  • the base of the transistor Q3 is connected in series with the first base limiting current resistor R1;
  • the base of the transistor Q4 is connected in series with the second base limiting current resistor R2;
  • the first base limiting current resistance R1 and the second base limiting current resistance R2 are connected in parallel with the current amplifying circuit;
  • the collector of the transistor Q3 is connected to the power supply VCC1, and the first voltage stabilizing resistor R3 is connected between the base and the emitter of the transistor Q3;
  • the collector of the transistor Q4 is connected to the power supply VEE1, and the second voltage stabilizing resistor R4 is connected between the base and the emitter of the transistor Q4;
  • the emitter of the transistor Q3 is connected in series with the first gate current limiting resistor R5;
  • the emitter of the transistor Q4 is connected in series with the second gate current limiting resistor R6;
  • the first gate current limiting resistor R5 and the second gate current limiting resistor R6 are connected in parallel to the SiC-MOSFET.
  • the protection circuit includes:
  • the Miller clamp circuit is connected between the output terminal of the current amplifying module and the gate of the SiC-MOSFET, and is configured to monitor the voltage between the gate and the source of the SiC-MOSFET. When the voltage between the gate and the source of the SiC-MOSFET is greater than the gate threshold, the SiC-MOSFET is stably turned off by activating the Miller clamp circuit;
  • the desaturation protection circuit is connected to the drain of the SiC-MOSFET, and is configured to monitor the voltage of the drain of the SiC-MOSFET. When the voltage of the drain of the SiC-MOSFET is greater than the drain threshold, activate The desaturation protection circuit makes the SiC-MOSFET turn off stably.
  • the Miller clamp circuit includes:
  • the drain of the MOS transistor Q6 is connected to the first terminal of the resistor R8 and the first input terminal of the comparator A1, the second input terminal of the comparator A1 is connected to the gate threshold voltage, and the MOS The gate of the tube Q6 is connected to the output terminal of the logic module, and the source of the MOS tube Q6 is connected to the power supply VEE2;
  • the drain of the MOS transistor Q7 is connected to the first end of the resistor R10 and the first end of the resistor R9 in sequence, the gate of the MOS transistor Q7 is connected to the output end of the comparator A1, and the MOS The source of the tube Q7 is connected to the power supply VEE1;
  • the base of the transistor Q8 is connected between the resistor R9 and the resistor R10, and the collector of the transistor Q8 is connected to the power supply VEE1;
  • the emitter of the transistor Q8, the second end of the resistor R8, and the second end of the resistor R9 are connected between the output end of the current amplifier module and the gate of the SiC-MOSFET.
  • the desaturation protection circuit includes:
  • the first input terminal of the comparator A2 is connected to the drain of the SiC-MOSFET through the resistor R12, the diode D6 and the diode D7 in sequence, and the second input terminal of the comparator A2 is connected to the drain Extreme threshold, the output terminal of the comparator A2 is connected to the logic module;
  • the diode D5, the Zener diode ZD1, and the capacitor C1 are connected in parallel and connected between the first input terminal of the comparator A2 and the resistor R12.
  • the protection circuit further includes:
  • the input terminal of the undervoltage protection circuit is connected to the power supply VCC1
  • the output terminal of the undervoltage protection circuit is connected to the logic module
  • the undervoltage protection circuit is configured to monitor the voltage of the power supply VCC1.
  • a fault signal is input to the logic module to prevent the driving circuit from working.
  • the isolation circuit includes:
  • the input terminal of the photoelectric transceiver is connected with the input signal
  • the output terminal of the photoelectric transceiver is connected with the input terminal of the voltage shaping circuit
  • the voltage shaping circuit is set to output a stable rectangular level
  • the output terminal of the voltage shaping circuit is connected to the logic module.
  • the SiC-MOSFET drive circuit includes an isolation circuit, a logic module, a current amplification module, and a protection circuit.
  • the input signal is connected to the input terminal of the isolation circuit for signal isolation, the output terminal of the isolation circuit is connected to the input terminal of the logic module, and the output terminal of the logic module is connected to the current amplifying module and the protection circuit, which is set to the working state of the current amplifying module and the protection circuit Perform logic control;
  • the output terminal of the current amplification module is connected to a SiC-MOSFET (also known as a SiC-MOSFET power module), and is set to amplify the signal input through the logic module and convert it into a drive current that meets the requirements of the SiC-MOSFET;
  • the protection circuit is connected to the SiC-MOSFET power module and is set to prevent the SiC-MOSFET from malfunctioning due to the high voltage pulse generated between the gate and source of the SiC-MOSFET and the drain voltage of the SiC-MOSFET
  • the isolation circuit includes a photoelectric transceiver and a voltage shaping circuit.
  • the photoelectric transceiver can be an optical fiber transmitter of model HFBR-1521 and an optical fiber receiver of model HFBR-2521, and the voltage shaping circuit can be a Schmitt trigger shaping circuit.
  • the voltage shaping circuit is set to output a stable rectangular level.
  • the isolation circuit is composed of an optical fiber transmitter of model HFBR-1521, an optical fiber receiver of model HFBR-2521, and a Schmitt trigger voltage shaping circuit.
  • the signal undergoes electrical-optical-electrical conversion and passes through
  • the voltage shaping circuit is input to the logic module.
  • the energy is provided by VCC1, and the driving ability is greatly enhanced.
  • signal A is low and signal B is high, Q1 is off, Q2 is on, and the level at point C is low, Q3 is off, and Q4 is saturated and conducted, and the current of Q4 flows from the emitter to the collector.
  • the Q5 junction capacitance in the high-power SiC-MOSFET module is quickly discharged.
  • signal A and signal B cannot be high at the same time.
  • the Miller platform is generated due to the parasitic Miller capacitance being turned on.
  • the Miller effect is very significant in the single-supply gate drive process.
  • a very high transient dv/dt will be generated, which will cause the voltage between the gate and the source voltage Vgs to rise and conduction.
  • the protection circuit has a Miller clamp function.
  • the Miller clamp circuit is shown in Figure 4, and the input signal and other setting signals pass through the logic module to control the gate of Q6. When the input signal turns off the SiC-MOSFET, Q6 is turned off.
  • the comparator A1 If the gate voltage of Q5 is higher than the voltage VP, the comparator A1 outputs a high level to turn on Q7. At this time, the base of the transistor Q8 is extremely low , Q8 turns on, so that the gate voltage of Q5 drops rapidly, so that the SiC-MOSFET turns off stably.
  • the Miller clamp circuit in this embodiment includes: MOS transistor Q6, comparator A1, MOS transistor Q7, transistor Q8, resistor R8, resistor R9, and resistor R10;
  • the drain of the MOS transistor Q6 is connected between the output terminal of the current amplifier module and the gate of the SiC-MOSFET through a resistor R8, a resistor R9, and a resistor R10, and the source of the MOS transistor Q6 is connected to the power supply VEE2;
  • One input terminal of the comparator A1 is connected to the drain of the MOS transistor Q6, the other input terminal of the comparator A1 is connected to the gate threshold VP, and the output terminal of the comparator A1 is connected to the MOS transistor Q6.
  • the gate of Q7 is connected;
  • the drain of the MOS transistor Q7 is connected between the output terminal of the current amplifier module and the gate of the SiC-MOSFET through a resistor R9 and a resistor R10, and the source of the MOS transistor Q7 is connected to the power supply VEE1;
  • the base of the transistor Q8 is connected between the resistor R9 and the resistor R10, the emitter of the transistor Q8 is connected between the output terminal of the current amplifier module and the gate of the SiC-MOSFET, and the collector of the transistor Q8 is connected to Power supply VEE1 is connected.
  • a desaturation protection circuit is added to the protection circuit.
  • Figure 5 shows the desaturation protection circuit.
  • the desaturation protection function is activation.
  • the drive signal output is in a high-impedance state, the drain voltage of Q6 becomes low, the soft turn-off process is started, and the level at the connection point of R1 and R2 becomes low, and the level of Q5 The gate level remains low.
  • the desaturation protection circuit provided by this example includes: comparator A2, Zener diode ZD1, capacitor C1, resistor and diode;
  • One input terminal of the comparator A2 is connected to the drain of the SiC-MOSFET through a resistor R12, a diode D6, and a diode D7 in turn.
  • the other input terminal of the comparator A2 is connected to the drain threshold VD, and the comparator A2
  • the output terminal is connected to the logic module;
  • the Zener diode ZD1, and the capacitor C1 are connected in parallel, one end is connected in series between one input end of the comparator A2 and the resistor R12, and the other end is connected to the power supply VEE2.
  • the driving circuit designed in this application has the characteristics of fast switching speed, strong driving capability, and stable driving.
  • signal A when signal A is high and signal B is low, Q1 is turned on, Q2 is turned off, and R1 and The connection point of R2 is at a high level.
  • Q3 is saturated and turned on, Q4 is turned off, and the current of Q3 flows from the collector to the emitter.
  • the gate of the high-power SiC-MOSFET module Q5 is at high level, and the junction capacitance is quickly charged. On, the energy is provided by VCC1, and the driving capability is greatly enhanced.
  • Q1 When the input signal A is low and signal B is high, Q1 is cut off, Q2 is on, and the level at the connection point of R1 and R2 is low.
  • the drive protection circuit When the SiC-MOSFET is turned off, in order to prevent a high voltage pulse between the gate and the source, the drive protection circuit has a Miller clamp function.
  • Q6 When the input signal turns off the SiC-MOSFET module, Q6 is turned off If the gate voltage of Q5 is higher than the voltage VP, the comparator A1 outputs a high level to turn on Q7. At this time, the base of the transistor Q8 is extremely low, and Q8 turns on, causing the gate voltage of Q5 to drop rapidly. So that the SiC-MOSFET is turned off stably.
  • the drive circuit designed in this application is also designed with an under-voltage protection circuit with under-voltage lock out (UVLO).
  • UVLO under-voltage lock out
  • the drive circuit provided in this example enables the drive circuit to perform stable control on the SiC-MOSFET module, and the control signals and fault signals input from the outside are processed in the logic module LOGIC.
  • the circuit is designed with a desaturation protection function.
  • the desaturation protection function is that when the drain voltage of the SiC-MOSFET is greater than the protection voltage, the comparator A2 outputs a high level to the logic module to control the level of the output signal. At this time, the drive signal output is in a high-impedance state, the drain voltage of Q6 becomes low, and the soft turn-off process is started.
  • the drive protection circuit has a Miller clamp function.
  • the clamp function is when the input signal makes the SiC-MOSFET When the module is turned off, Q6 is turned off. If the gate voltage of Q5 is higher than the voltage VP, the comparator A1 outputs a high level to turn on Q7. At this time, the base of the transistor Q8 is extremely low, and Q8 turns on to make Q5 The gate voltage drops rapidly, so that the SiC-MOSFET turns off stably.
  • the logic module in this embodiment may use a chip in related technologies, such as BM60052FV-C.

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Abstract

一种碳化硅-金属氧化物半导体场效应晶体管SiC-MOSFET的驱动电路，包括：隔离电路、电流放大模块、逻辑模块和保护电路；所述隔离电路的输入端与输入信号连接，隔离电路设置为对输入信号进行信号隔离；所述逻辑模块的输出端与电流放大模块和保护电路分别连接，逻辑模块设置为对电流放大模块和保护电路的工作状态进行逻辑控制；电流放大模块的输入端与逻辑模块的输出端连接，电流放大模块的输出端与SiC-MOSFET连接，电流放大模块设置为对通过逻辑模块输入的信号进行放大并转换为满足SiC-MOSFET需求的驱动电流；所述保护电路与SiC-MOSFET连接，设置为通过防止SiC-MOSFET的栅极与源极之间产生的高电压脉冲导致SiC-MOSFET误动作的情况发生，和SiC-MOSFET在关断时漏极的电压突增的情况下实现SIC-MOSFET的稳定关断。

Description

碳化硅-金属氧化物半导体场效应晶体管SIC-MOSFET的驱动电路
本申请要求在2019年05月05日提交中国专利局、申请号为201910369797.5的中国专利申请的优先权，该申请的全部内容通过引用结合在本申请中。
技术领域
本申请涉及碳化硅-金属氧化物半导体场效应晶体管(SiC-Metal-Oxide-Semiconductor Field-Effect Transistor，SIC-MOSFET)的驱动电路领域，例如涉及一种SIC-MOSFET的驱动电路。
背景技术
碳化硅SiC因具有宽禁带、高击穿电场、高饱和漂移速度和高热导率等优越电学特性，与其他材料相比，更适合工作在高温、高功率和高频的特殊条件下，所以备受人们青睐。而根据碳化硅SiC生成的SiC-MOSTET为单极性电压控制型器件，具有开关速度快、耐压等级高以及热稳定性良好的优点，可稳定工作在高温、高辐射等恶劣环境下，但SiC-MOSFET功率模块对驱动电路的要求较高，对驱动电路的隔离性能、快速性能、驱动能力要求严苛，SiC-MOSFET的开通饱和压降非常低，对应的退饱和保护电路需要更加灵敏，保护电压的电压值需要降低，保护电压降低时间需要更快，所以基于绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor，IGBT)设计的驱动电路无法满足SiC-MOSFET的驱动要求，需要设计一个具有良好隔离能力、栅源极保护能力的高速SiC-MOSFET驱动电路。
发明内容
本申请提供一种SIC-MOSFET的驱动电路，以解决相关技术中所存在的基于IGBT设计的驱动电路无法满足SiC-MOSFET的驱动要求的问题。
本申请提供的技术方案包括：
隔离电路、电流放大模块、逻辑模块和保护电路；
所述隔离电路的输入端与输入信号连接，所述隔离电路的输出端与所述逻辑模块的输入端连接，所述隔离电路设置为进行信号隔离；
所述逻辑模块的输出端与电流放大模块和保护电路分别连接，所述逻辑模块设置为对电流放大模块和保护电路的工作状态进行逻辑控制；
电流放大模块的输入端与逻辑模块的输出端连接，电流放大模块的输出端 与SiC-MOSFET连接，所述电流放大模块设置为对通过逻辑模块输入的信号进行放大并转换为满足SiC-MOSFET需求的驱动电流；
所述保护电路与SiC-MOSFET连接，设置为防止SiC-MOSFET的栅极与源极之间产生的高电压脉冲导致SiC-MOSFET误动作的情况发生，和在SiC-MOSFET在关断时漏极的电压突增的情况下实现SIC-MOSFET的稳定关断。
附图说明
图1为本申请中提供的SIC-MOSFET的驱动电路结构示意图；
图2为本申请中提供的隔离电路的结构示意图；
图3为本申请中提供的电流放大模块的结构示意图；
图4为本申请提供的驱动电路中米勒钳位电路的结构示意图；
图5为本申请提供的驱动电路中在米勒钳位电路的基础上增加去饱和保护电路的结构示意图；
图6为本申请提供的驱动电路的完整结构示意图。
具体实施方式
为了理解本申请，下面结合说明书附图和实例对本申请的内容进行说明。
因为SiC-MOSFET栅极阈值电压较小，容易被外界干扰而产生误动作，为了提高其工作稳定性，要求SiC-MOSFET采用负电压关断，驱动电路采用隔离型驱动；为了保证SiC-MOSFET开关的高速性，驱动电路要能够输出足够大的驱动电流，栅源电压不应超过阈值以防止栅极氧化层击穿。
本申请实施例提供了一种SiC-MOSFET的驱动电路，包括：
隔离电路、电流放大模块、逻辑模块和保护电路；
所述隔离电路的输入端与输入信号连接，所述隔离电路的输出端与所述逻辑模块的输入端连接，所述隔离电路设置为进行信号隔离；
所述逻辑模块的输出端与所述电流放大模块和所述保护电路分别连接，所述逻辑模块设置为对所述电流放大模块和所述保护电路的工作状态进行逻辑控制；
所述电流放大模块的输入端与所述逻辑模块的输出端连接，所述电流放大模块的输出端与SiC-MOSFET连接，所述电流放大模块设置为对通过所述逻辑模块输入的信号进行放大并转换为满足所述SiC-MOSFET需求的驱动电流；
所述保护电路与SiC-MOSFET连接，设置为防止所述SiC-MOSFET的栅极与源极之间产生的高电压脉冲导致所述SiC-MOSFET误动作的情况发生，和在所述SiC-MOSFET在关断时漏极的电压突增的情况下实现所述SIC-MOSFET的稳定关断。
本申请提供的驱动电路为SIC-MOSFET提供具有栅源极保护能力，且在高频情况下提供稳得驱动信号的驱动电路，该驱动电路具有隔离性能好、驱动速度快、驱动能力强的优点。
本申请提供的技术方案，具有高速、隔离、稳定的优点，将输入信号整形为优品质的控制信号，采用图腾柱电流放大电路，可输出符合驱动需求的驱动电流，驱动能力强，驱动时间短，驱动电路具有欠压保护，去饱和保护，米勒钳位等功能，使SiC-MOSFET功率模块控制稳定，安全。
在一实施例中，所述电流放大模块，包括：
电流放大电路和图腾柱电流放大电路；
所述电流放大电路与所述图腾柱电流放大电路串联，所述电流放大电路设置为将所述逻辑模块输出的信号进行一级放大得到一级放大电流；
所述图腾柱电流放大电路设置为将所述一级放大电流进行二级放大，为所述SiC-MOSFET提供满足需求的驱动电流。
在一实施例中，所述电流放大电路，包括：
MOS管Q1、MOS管Q2和三个二极管，其中，所述三个二极管包括二极管D1、二极管D2以及二极管D3；
所述逻辑模块输出的信号接入所述MOS管Q1的栅极和所述MOS管Q2的栅极；
所述MOS管Q1的源极和电源VCC1以及所述二极管D1的负极连接；
所述MOS管Q2的源极和电源VEE1以及所述二极管D2的正极和所述二极管D3的正极连接；
所述MOS管Q1和所述MOS管Q2的漏极均与所述二极管D1的正极、所述二极管D2的负极、所述二极管D3的负极以及所述图腾柱电流放大电路的输入端连接。
在一实施例中，所述图腾柱电流放大电路，包括：
三极管Q3、三极管Q4、第一基极限流电阻R1、第二基极限流电阻R2、第一稳压电阻R3、第二稳压电阻R4、第一栅极限流电阻R5和第二栅极限流电阻R6；
所述三极管Q3的基极与所述第一基极限流电阻R1串联；
所述三极管Q4的基极与所述第二基极限流电阻R2串联；
所述第一基极限流电阻R1与所述第二基极限流电阻R2并联后与所述电流放大电路连接；
所述三极管Q3的集电极连接电源VCC1，所述三极管Q3的基极和发射极之间连接所述第一稳压电阻R3；
所述三极管Q4的集电极连接电源VEE1，所述三极管Q4的基极和发射极之间连接所述第二稳压电阻R4；
所述三极管Q3的发射极与所述第一栅极限流电阻R5串联；
所述三极管Q4的发射极与所述第二栅极限流电阻R6串联；
所述第一栅极限流电阻R5和所述第二栅极限流电阻R6并联后接入所述SiC-MOSFET。
在一实施例中，所述保护电路，包括：
米勒钳位电路和去饱和保护电路；
所述米勒钳位电路连接在所述电流放大模块的输出端与所述SiC-MOSFET的栅极之间，设置为监测所述SiC-MOSFET的栅极与源极之间的电压，在监测到所述SiC-MOSFET的栅极与源极之间的电压大于栅极阈值的情况下，通过激活所述米勒钳位电路使所述SiC-MOSFET稳定关断；
所述去饱和保护电路与所述SiC-MOSFET的漏极连接，设置为监测所述SiC-MOSFET漏极的电压，在所述SiC-MOSFET漏极的电压大于漏极阈值的情况下，通过激活所述去饱和保护电路使所述SiC-MOSFET稳定关断。
在一实施例中，所述米勒钳位电路，包括：
MOS管Q6、比较器A1、MOS管Q7、三极管Q8、电阻R8、电阻R9和电阻R10；
所述MOS管Q6的漏极与所述电阻R8的第一端以及所述比较器A1的第一输入端连接，所述比较器A1的第二输入端接入栅极阈值电压，所述MOS管Q6的栅极与所述逻辑模块的输出端连接，所述MOS管Q6的源极与电源VEE2连接；
所述MOS管Q7的漏极依次与所述电阻R10第一端和所述电阻R9的第一端连接，所述MOS管Q7的栅极与所述比较器A1的输出端连接，所述MOS管Q7的源极与电源VEE1连接；
所述三极管Q8的基极连接在所述电阻R9和所述电阻R10之间，所述三极管Q8的集电极与电源VEE1连接；
所述三极管Q8的发射极、所述电阻R8的第二端和所述电阻R9的第二端连接在所述电流放大模块的输出端与所述SiC-MOSFET的栅极之间。
在一实施例中，所述去饱和保护电路，包括：
比较器A2、稳压二极管ZD1、电容C1、电阻和二极管；
所述比较器A2的第一输入端依次通过所述电阻R12、所述二极管D6和所述二极管D7与所述SiC-MOSFET的漏极连接，所述比较器A2的第二输入端接入漏极阈值，所述比较器A2的输出端连接所述逻辑模块；
所述二极管D5、所述稳压二极管ZD1和所述电容C1并联后接入所述比较器A2的所述第一输入端与所述电阻R12之间。
在一实施例中，所述保护电路，还包括：
欠压保护电路；
所述欠压保护电路的输入端与电源VCC1连接，所述欠压保护电路的输出端与所述逻辑模块连接，所述欠压保护电路设置为监测所述电源VCC1的电压，在所述电源VCC1的电压不足以提供稳定的驱动能力的情况下，向所述逻辑模块输入故障信号，阻止所述驱动电路工作。
在一实施例中，所述隔离电路包括：
光电收发器和电压整形电路；
所述光电收发器的输入端与所述输入信号连接，所述光电收发器的输出端与所述电压整形电路的输入端连接，所述电压整形电路设置为输出稳定的矩形电平；
所述电压整形电路的输出端与所述逻辑模块连接。
如图1所示，本申请提供的SiC-MOSFET的驱动电路，包括隔离电路、逻辑模块、电流放大模块和保护电路。输入信号接隔离电路的输入端，进行信号隔离，隔离电路的输出端接逻辑模块的输入端，逻辑模块的输出端接电流放大模块和保护电路，设置为对电流放大模块和保护电路的工作状态进行逻辑控制；所述电流放大模块的输出端连接SiC-MOSFET(也称为SiC-MOSFET功率模块)，设置为对通过逻辑模块输入的信号进行放大并转换为满足SiC-MOSFET需求的驱动电流；保护电路连接SiC-MOSFET功率模块，设置为通过防止SiC-MOSFET的栅极与源极之间产生的高电压脉冲导致SiC-MOSFET误动作和SiC-MOSFET在关断时的漏极电压突增，以实现SIC-MOSFET的稳定关断。
隔离电路包括光电收发器和电压整形电路，其中光电收发器可以是型号为HFBR-1521的光纤发送器和型号为HFBR-2521的光纤接收器，电压整形电路可以是施密特触发器整形电路，电压整形电路设置为输出稳定的矩形电平。
如图2所述，隔离电路为由型号为HFBR-1521的光纤发送器和型号为HFBR-2521的光纤接收器和施密特触发器电压整形电路构成，信号经过电—光—电转换，经过电压整形电路输入到逻辑模块。
如图3所示的电流放大模块，当信号A为低电平、信号B为低电平时，Q1和Q2都截止，C点处于高阻抗状态，后级电路都为截止状态，Q5不导通，当信号A为高电平，信号B为低电平时，Q1导通，Q2截止，C点处为高电平，此时，Q3饱和导通，Q4截止，Q3的电流由集电极流向发射极，大功率SiC-MOSFET模块(也可称为SiC-MOSFET功率模块或SiC-MOSFET)中Q5的栅极为高电平，结电容迅速充电而导通，能量由VCC1提供，驱动能力大大增强。当信号A为低电平、信号B为高电平时，Q1截止，Q2导通，C点处电平为低电平，Q3截止，Q4饱和导通，Q4的电流由发射极流向集电极，这时大功率SiC-MOSFET模块中Q5结电容迅速放电。
在该电流放大模块中信号A和信号B不可同时为高电平。
在SiC-MOSFET模块开关时，有一个会经常遇到的问题，那就是由于寄生米勒电容开通而产生米勒平台。米勒效应在单电源门极驱动过程中非常显著。在SiC-MOSFET关断期间会产生一个很高的瞬态dv/dt，这样会引发栅极相对于源极的电压Vgs间电压升高而导通，这里存在着潜在的导通，为防止这种误动作的产生，保护电路带有米勒钳位功能，图4中给出了米勒钳位电路，输入信号和其他设置信号经过逻辑模块控制Q6的栅极。当输入的信号使SiC-MOSFET关断时，Q6截止，如果Q5的栅极电压高于电压VP，比较器A1输出高电平，使Q7导通，此时，三极管Q8的基极为低电平，Q8导通，使Q5的栅极电压迅速下降，从而使SiC-MOSFET稳定关断。
本实施例中的米勒钳位电路，包括：MOS管Q6、比较器A1、MOS管Q7、三极管Q8、电阻R8、电阻R9和电阻R10；
所述MOS管Q6的漏极通过电阻R8、电阻R9和电阻R10连接在电流放大模块的输出端与SiC-MOSFET的栅极之间，所述MOS管Q6的源极与电源VEE2连接；
所述比较器A1的一个输入端与所述MOS管Q6的漏极连接，所述比较器A1的另一个输入端接入栅极阈值VP，所述比较器A1的输出端与所述MOS管Q7的栅极连接；
所述MOS管Q7的漏极通过电阻R9和电阻R10连接在电流放大模块的输出端与SiC-MOSFET的栅极之间，所述MOS管Q7的源极与电源VEE1连接；
所述三极管Q8的基极连接在电阻R9和电阻R10之间，所述三极管Q8的发射极连接在电流放大模块的输出端与SiC-MOSFET的栅极之间，所述三极管Q8的集电极与电源VEE1连接。
为防止SiC-MOSFET功率模块漏极电压突增，保护电路加入了去饱和保护电路，图5所示为去饱和保护电路，当比较器A2的正向输入电压大于VD时，去饱和保护功能被激活。当去饱和保护功能被激活时，驱动信号输出为高阻态，Q6漏极电压变为低电平，开启软关断过程，R1和R2的连接点处电平变为低电平，Q5的栅极电平保持低电平。
本实例提供的去饱和保护电路，包括：比较器A2、稳压二极管ZD1、电容C1、电阻和二极管；
所述比较器A2的一个输入端依次通过电阻R12、二极管D6和二极管D7与SiC-MOSFET的漏极连接，所述比较器A2的另一个输入端接入漏极阈值VD，所述比较器A2的输出端连接逻辑模块；
所述二极管D5、稳压二极管ZD1和电容C1并联后一端串联接入所述比较器A2的一个输入端与电阻R12之间，另一端与电源VEE2连接。
本申请设计的驱动电路具有开关速度快，驱动能力强，驱动稳定等特点，如图6所示，当信号A为高电平，信号B为低电平时，Q1导通，Q2截止，R1和R2的连接点处为高电平，此时，Q3饱和导通，Q4截止，Q3的电流由集电极流向发射极，大功率SiC-MOSFET模块Q5的栅极为高电平，结电容迅速充电而导通，能量由VCC1提供，驱动能力大大增强。当输入信号A为低电平、信号B为高电平时，Q1截止，Q2导通，R1和R2的连接点处电平为低电平，此时，Q3截止，Q4饱和导通，Q4的电流由发射极流向集电极，这时大功率SiC-MOSFET模块Q5结电容迅速放电。当大功率SiC-MOSFET模块漏极电压突增时，去饱和保护功能被激活。当去饱和保护功能被激活时，驱动信号输出为高阻态，Q6漏极电压变为低电平，开启软关断过程，R1和R2的连接点处电平变为低电平，Q5的栅极电平保持低电平。在SiC-MOSFET关断时，为防止栅极与源极之间产生一个高的电压脉冲，驱动保护电路带有米勒钳位功能，当输入的信号使SiC-MOSFET模块关断时，Q6截止，如果Q5的栅极电压高于电压VP，比较器A1输出高电平，使Q7导通，此时，三极管Q8的基极为低电平，Q8导通，使Q5的栅极电压迅速下降，从而使SiC-MOSFET稳定关断。
本申请设计的驱动电路还设计有欠压保护电路，具有欠压锁定功能(Under  Voltage Lock Out，UVLO)，当电源VCC1的电压下降时，控制信号输出为低电平，不足以提供稳定的驱动能力时，故障信号输出低电平，当电源VCC1的电压恢复后，这些引脚将复位。
本实例提供的驱动电路，使驱动电路对SiC-MOSFET模块进行稳定的控制，外部输入的控制信号和故障信号等在逻辑模块LOGIC处理。驱动电路正常工作时，为防止大功率SiC-MOSFET模块漏极电压突增，电路设计带有去饱和保护功能，所述去饱和保护功能为SiC-MOSFET的漏极电压大于保护电压时，比较器A2输出高电平到逻辑模块，从而控制输出信号的电平，此时，驱动信号输出为高阻态，Q6漏极电压变为低电平，开启软关断过程，R1和R2的连接点处电平变为低电平，Q5的栅极电平保持低电平。在SiC-MOSFET关断时，为防止栅极与源极之间产生一个高的电压脉冲，驱动保护电路带有米勒钳位功能，所述的钳位功能为当输入的信号使SiC-MOSFET模块关断时，Q6截止，如果Q5的栅极电压高于电压VP，比较器A1输出高电平，使Q7导通，此时，三极管Q8的基极为低电平，Q8导通，使Q5的栅极电压迅速下降，从而使SiC-MOSFET稳定关断。
本实施例中的逻辑模块可以采用相关技术中的芯片，例如BM60052FV-C。

Claims (9)

  1. 一种碳化硅-金属氧化物半导体场效应晶体管SiC-MOSFET的驱动电路，包括：
    隔离电路、电流放大模块、逻辑模块和保护电路；
    所述隔离电路的输入端与输入信号连接，所述隔离电路的输出端与所述逻辑模块的输入端连接，所述隔离电路设置为进行信号隔离；
    所述逻辑模块的输出端与所述电流放大模块和所述保护电路分别连接，所述逻辑模块设置为对所述电流放大模块和所述保护电路的工作状态进行逻辑控制；
    所述电流放大模块的输入端与所述逻辑模块的输出端连接，所述电流放大模块的输出端与SiC-MOSFET连接，所述电流放大模块设置为对通过所述逻辑模块输入的信号进行放大并转换为满足所述SiC-MOSFET需求的驱动电流；
    所述保护电路与SiC-MOSFET连接，设置为防止所述SiC-MOSFET的栅极与源极之间产生的高电压脉冲导致所述SiC-MOSFET误动作的情况发生，和在所述SiC-MOSFET在关断时漏极的电压突增的情况下实现所述SIC-MOSFET的稳定关断。
  2. 如权利要求1所述的驱动电路，其中，所述电流放大模块，包括：
    电流放大电路和图腾柱电流放大电路；
    所述电流放大电路与所述图腾柱电流放大电路串联，所述电流放大电路设置为将所述逻辑模块输出的信号进行一级放大得到一级放大电流；
    所述图腾柱电流放大电路设置为将所述一级放大电流进行二级放大，为所述SiC-MOSFET提供满足需求的驱动电流。
  3. 如权利要求2所述的驱动电路，其中，所述电流放大电路，包括：
    金属氧化物半导体MOS管Q1、MOS管Q2和三个二极管，其中，所述三个二极管包括二极管D1、二极管D2以及二极管D3；
    所述逻辑模块输出的信号接入所述MOS管Q1的栅极和所述MOS管Q2的栅极；
    所述MOS管Q1的源极和电源VCC1以及所述二极管D1的负极连接；
    所述MOS管Q2的源极和电源VEE1以及所述二极管D2的正极和所述二极管D3的正极连接；
    所述MOS管Q1和所述MOS管Q2的漏极均与所述二极管D1的正极、所述二极管D2的负极、所述二极管D3的负极以及所述图腾柱电流放大电路的输 入端连接。
  4. 如权利要求2所述的驱动电路，其中，所述图腾柱电流放大电路，包括：
    三极管Q3、三极管Q4、第一基极限流电阻R1、第二基极限流电阻R2、第一稳压电阻R3、第二稳压电阻R4、第一栅极限流电阻R5和第二栅极限流电阻R6；
    所述三极管Q3的基极与所述第一基极限流电阻R1串联；
    所述三极管Q4的基极与所述第二基极限流电阻R2串联；
    所述第一基极限流电阻R1与所述第二基极限流电阻R2并联后与所述电流放大电路连接；
    所述三极管Q3的集电极连接电源VCC1，所述三极管Q3的基极和发射极之间连接所述第一稳压电阻R3；
    所述三极管Q4的集电极连接电源VEE1，所述三极管Q4的基极和发射极之间连接所述第二稳压电阻R4；
    所述三极管Q3的发射极与所述第一栅极限流电阻R5串联；
    所述三极管Q4的发射极与所述第二栅极限流电阻R6串联；
    所述第一栅极限流电阻R5和所述第二栅极限流电阻R6并联后接入所述SiC-MOSFET。
  5. 如权利要求1所述的驱动电路，其中，所述保护电路，包括：
    米勒钳位电路和去饱和保护电路；
    所述米勒钳位电路连接在所述电流放大模块的输出端与所述SiC-MOSFET的栅极之间，设置为监测所述SiC-MOSFET的栅极与源极之间的电压，在监测到所述SiC-MOSFET的栅极与源极之间的电压大于栅极阈值的情况下，通过激活所述米勒钳位电路使所述SiC-MOSFET稳定关断；
    所述去饱和保护电路与所述SiC-MOSFET的漏极连接，设置为监测所述SiC-MOSFET漏极的电压，在所述SiC-MOSFET漏极的电压大于漏极阈值的情况下，通过激活所述去饱和保护电路使所述SiC-MOSFET稳定关断。
  6. 如权利要求5所述的驱动电路，其中，所述米勒钳位电路，包括：
    MOS管Q6、比较器A1、MOS管Q7、三极管Q8、电阻R8、电阻R9和电阻R10；
    所述MOS管Q6的漏极与所述电阻R8的第一端以及所述比较器A1的第一输入端连接，所述比较器A1的第二输入端接入栅极阈值电压，所述MOS管Q6 的栅极与所述逻辑模块的输出端连接，所述MOS管Q6的源极与电源VEE2连接；
    所述MOS管Q7的漏极依次与所述电阻R10的第一端和所述电阻R9的第一端连接，所述MOS管Q7的栅极与所述比较器A1的输出端连接，所述MOS管Q7的源极与电源VEE1连接；
    所述三极管Q8的基极连接在所述电阻R9和所述电阻R10之间，所述三极管Q8的集电极与电源VEE1连接；
    所述三极管Q8的发射极、所述电阻R8的第二端和所述电阻R9的第二端连接在所述电流放大模块的输出端与所述SiC-MOSFET的栅极之间。
  7. 如权利要求5所述的驱动电路，其中，所述去饱和保护电路，包括：
    比较器A2、稳压二极管ZD1、电容C1、电阻和二极管；
    所述比较器A2的第一输入端依次通过所述电阻R12、所述二极管D6和所述二极管D7与所述SiC-MOSFET的漏极连接，所述比较器A2的第二输入端接入漏极阈值，所述比较器A2的输出端连接所述逻辑模块；
    所述二极管D5、所述稳压二极管ZD1和所述电容C1并联后接入所述比较器A2的所述第一输入端与所述电阻R12之间。
  8. 如权利要求5所述的驱动电路，其中，所述保护电路，还包括：
    欠压保护电路；
    所述欠压保护电路的输入端与电源VCC1连接，所述欠压保护电路的输出端与所述逻辑模块连接，所述欠压保护电路设置为监测所述电源VCC1的电压，在所述电源VCC1的电压不足以提供稳定的驱动能力的情况下，向所述逻辑模块输入故障信号，阻止所述驱动电路工作。
  9. 如权利要求1所述的驱动电路，其中，所述隔离电路包括：
    光电收发器和电压整形电路；
    所述光电收发器的输入端与所述输入信号连接，所述光电收发器的输出端与所述电压整形电路的输入端连接，所述电压整形电路设置为输出稳定的矩形电平；
    所述电压整形电路的输出端与所述逻辑模块连接。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113067566A (zh) * 2021-03-31 2021-07-02 江苏中科汉韵半导体有限公司 具有保护功能的高压绝缘隔离SiC MOSFET栅驱动电路
CN115037129A (zh) * 2022-06-17 2022-09-09 合肥工业大学 一种基于SiC MOSFET并联均流的控制电路
CN116192109A (zh) * 2023-01-19 2023-05-30 苏州纳芯微电子股份有限公司 分级关断驱动电路、装置及安全芯片

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112821732A (zh) * 2021-03-12 2021-05-18 华北电力大学（保定） 一种并联mosfet的高频电路驱动电路

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103595225A (zh) * 2013-10-23 2014-02-19 北京赛德高科铁道电气科技有限责任公司 一种电力机车用变流器的igbt驱动电路
CN105811942A (zh) * 2014-12-30 2016-07-27 国家电网公司 一种带有过流保护功能的mosfet驱动电路及其应用方法
US20180369864A1 (en) * 2017-06-23 2018-12-27 Ulc Robotics, Inc. Power Supply for Electromagnetic Acoustic Transducer (EMAT) Sensors
CN109302169A (zh) * 2018-08-23 2019-02-01 湖南强军科技有限公司 一种SiC MOSFET驱动保护电路及其保护方法
US20190096948A1 (en) * 2016-03-25 2019-03-28 Sony Corporation Semiconductor device, solid-state image pickup element, image pickup device, and electronic apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4350295B2 (ja) * 2000-10-26 2009-10-21 三菱電機株式会社 半導体装置および半導体装置モジュール
CN203104317U (zh) * 2012-08-14 2013-07-31 深圳市东辰科技有限公司 提高mppt效率的同步整流电路
CN103199677B (zh) * 2013-04-08 2015-08-19 乐金电子研发中心(上海)有限公司 单路隔离型mosfet驱动电路
US9705452B2 (en) * 2015-10-30 2017-07-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Protection circuit for power amplifier
CN108134510B (zh) * 2016-12-01 2020-10-27 上海汽车集团股份有限公司 Igbt驱动电路
CN108631557B (zh) * 2017-03-20 2020-03-10 台达电子企业管理（上海）有限公司 绝缘栅双极型晶体管的栅极电压控制电路及其控制方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103595225A (zh) * 2013-10-23 2014-02-19 北京赛德高科铁道电气科技有限责任公司 一种电力机车用变流器的igbt驱动电路
CN105811942A (zh) * 2014-12-30 2016-07-27 国家电网公司 一种带有过流保护功能的mosfet驱动电路及其应用方法
US20190096948A1 (en) * 2016-03-25 2019-03-28 Sony Corporation Semiconductor device, solid-state image pickup element, image pickup device, and electronic apparatus
US20180369864A1 (en) * 2017-06-23 2018-12-27 Ulc Robotics, Inc. Power Supply for Electromagnetic Acoustic Transducer (EMAT) Sensors
CN109302169A (zh) * 2018-08-23 2019-02-01 湖南强军科技有限公司 一种SiC MOSFET驱动保护电路及其保护方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113067566A (zh) * 2021-03-31 2021-07-02 江苏中科汉韵半导体有限公司 具有保护功能的高压绝缘隔离SiC MOSFET栅驱动电路
CN113067566B (zh) * 2021-03-31 2024-04-30 江苏中科汉韵半导体有限公司 具有保护功能的高压绝缘隔离SiC MOSFET栅驱动电路
CN115037129A (zh) * 2022-06-17 2022-09-09 合肥工业大学 一种基于SiC MOSFET并联均流的控制电路
CN115037129B (zh) * 2022-06-17 2024-03-05 合肥工业大学 一种基于SiC MOSFET并联均流的控制电路
CN116192109A (zh) * 2023-01-19 2023-05-30 苏州纳芯微电子股份有限公司 分级关断驱动电路、装置及安全芯片

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