WO2020216354A1

WO2020216354A1 - Method for designing multi-stage electric field dust removal system for semiconductor manufacturing clean room system

Info

Publication number: WO2020216354A1
Application number: PCT/CN2020/086849
Authority: WO
Inventors: 唐万福; 赵晓云; 王大祥; 段志军; 邹永安; 奚勇
Original assignee: 上海必修福企业管理有限公司
Priority date: 2019-04-25
Filing date: 2020-04-24
Publication date: 2020-10-29
Also published as: CN114072619A; CN218763868U; TWI730738B; WO2020216359A1; TW202106391A; TW202101644A; TW202039085A; TWI739499B; WO2020216352A1; WO2020216358A1; CN113727782A; TW202042910A; TWI739500B; WO2020216356A1; TW202042908A; CN114072620A; CN113727783A; WO2020216357A1; TWI739502B; WO2020216353A1

Abstract

A method for designing a multi-stage electric field dust removal system for a semiconductor manufacturing clean room system, comprising the following steps: selecting the number n of electric field devices in a multi-stage electric field dust removal system and the voltage of each electric field device power supply so that the total dust removal efficiency of the electric field dust removal system, (100%-(100%-P₁%)*(100%-P₂%)*…*(100%-P_n%)), is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, wherein P₁%, P₂%... and P_n% are sequentially the dust removal efficiency of the first-stage, the second-stage, ... and the nth-stage electric field devices, respectively, and n is an integer greater than 1. The present method can control the amount of ozone generated below a predetermined value while ensuring the total dust removal efficiency.

Description

Method for designing multi-level electric field dust removal system of semiconductor manufacturing clean room system

Technical field

The invention belongs to the field of air purification, and particularly relates to a method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room system.

Background technique

With the advancement of technology, the size of semiconductor devices is getting smaller and smaller, and the requirements for the environment of the semiconductor manufacturing workshop are getting higher and higher. The clean room is a commonly used manufacturing workshop environment in the semiconductor manufacturing process. The purpose is to avoid particles, humidity, temperature and other pollution of semiconductor materials, which in turn affects the yield and reliability of semiconductors. According to the cleanliness requirements of the production process on the production environment, each clean room has a different air cleanliness level, which is usually divided by the maximum concentration limit of a certain particle size in the clean room. Correspondingly, different air cleanliness levels have different requirements for the cleanliness of the airflow entering the clean room.

Generally speaking, the existing semiconductor manufacturing plant is a three-story building. The clean room is arranged on the middle level of the plant, that is, the second floor. The third level of the plant is equipped with a purification system, including the installation between the third floor and the second floor. The air enters from the third floor, and the air entering the third floor is purified by the purification system. The purified gas is input to the clean room on the second floor, and the gas generated in the clean room is discharged into the first floor of the factory building. The layer always maintains negative pressure to ensure that the clean room on the second layer always keeps air out to the first layer, and dust cannot suck in.

Moreover, the existing semiconductor manufacturing plant occupies a large space and the construction cost is high; the filter cotton is spread about 1 meter later between the second and third floors of the plant, which needs to be replaced regularly, which leads to increased use costs.

At present, an electric field device is also used to remove dust and purify the particles contained in the dust-containing gas. The basic principle is to use high-voltage discharge to generate plasma to charge the particles, and then adsorb the charged particles to the dust collecting electrode to achieve electric field dust removal. Although the existing electric field device can overcome the shortcomings of large space occupation, high construction cost, and high power consumption in the existing semiconductor manufacturing plant, the current semiconductor manufacturing requires more and more dust removal, and the existing electric field device cannot meet the corresponding requirements . For example, the existing semiconductor manufacturing size is generally below 100 nm, and 50 nm dust particles are only allowed to be 2 particles/m ³ , and the existing electric field devices cannot effectively remove particles of this level.

At the same time, in the existing electric field dust removal device, a certain concentration of ozone is generated along with electric field discharge. Generally speaking, in order to obtain a higher dust removal efficiency, a higher electric field voltage is required. But when the electric field voltage increases to a certain value to meet the energy required for ozone formation, the ozone content increases. The high concentration of ozone not only affects human health, but also accelerates the corrosion and oxidation of materials and equipment, accelerates material consumption, and reduces equipment service life. If the ozone content in the clean room exceeds national or international standards, it will deteriorate the working environment of the entire clean room.

In order to reduce the ozone content, the following four methods are generally used at present. One is to decay the ozone itself with the air flow; the other is to increase the temperature of the air flowing through the environment to quickly reduce ozone to oxygen; and the third is to use redox reactions to reduce Ozone reacts with reducing substances to achieve ozone digestion; the fourth is to use adsorbents or adsorption devices to efficiently remove ozone, such as activated carbon. The above methods need to increase the length of the air flow channel or add additional heating equipment and ozone removal equipment to achieve a relatively ideal ozone removal effect. It has disadvantages such as large volume, high cost, and difficult control.

Summary of the invention

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a clean room system and semiconductor manufacturing system for semiconductor manufacturing, and a multi-stage electric field dust removal method and semiconductor for the clean room system of semiconductor manufacturing The manufacturing method also provides a method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room system, which solves the contradiction between electrostatic dust removal efficiency and excessive ozone concentration, and the existing air purification technology in the semiconductor manufacturing field consumes high power and large volume , The cost is high, and at least one technical problem cannot be removed from the nano-scale particles in the air. In some embodiments of the present invention, the removal efficiency of particles with a diameter of 23nm can reach 99.99% or more under the working condition of a gas flow rate of 6m/s, and the removal efficiency is high. Therefore, the present invention can effectively remove particles at a high flow rate. The required electric field device is small in size, low in cost, and can reduce operating electricity costs; at the same time, some embodiments of the present invention have a removal efficiency of more than 99.99% for 23nm particles in the gas, and the ozone output is controlled within a certain range to meet the requirements of semiconductor Manufacturing environment requirements.

In order to achieve the above objectives and other related objectives, the present invention provides the following technical solutions:

1. Example 1 provided by the present invention: a clean room system for semiconductor manufacturing, including a clean room and a multi-level electric field dust removal system;

The clean room includes a gas inlet; the multi-level electric field dust removal system includes a dust removal system inlet, a dust removal system outlet, and at least two electric field devices connected in series; the gas inlet of the clean room and the dust removal system of the multi-level electric field dust removal system The outlet is connected.

2. Example 2 provided by the present invention: including the above example 1, wherein each of the electric field devices includes an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionizing electric field.

3. Example 3 provided by the present invention: including the above example 1 or 2, wherein the multi-stage electric field dust removal system further includes a power supply device, and the electric field anode and the electric field cathode of each electric field device are connected to the two power supply devices. The electrodes are electrically connected.

4. Example 4 provided by the present invention: including the above example 3, wherein the power supply device provides the same voltage for each electric field device in the multi-stage electric field dust removal system.

5. Example 5 provided by the present invention: including the above example 3, wherein the power supply device provides a different voltage for each of the electric field devices in the multi-stage electric field dust removal system.

6. Example 6 provided by the present invention: including any one of the above examples 3 to 5, wherein the voltage value provided by the power supply device to each electric field device is sufficient to ensure the total dust removal efficiency of the multi-stage electric field dust removal system (100%- (100%-P ₁ %)*(100%-P ₂ %)*……*(100%-P _n %)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where, P ₁ %, P ₂ %...P _n % are respectively the dust removal efficiency of the first stage, the second stage, ... the nth stage of the electric field device, and n is an integer greater than 1.

7. Example 7 provided by the present invention: includes any one of the above examples 1 to 6, wherein each of the electric field devices further includes an electric field device inlet and an electric field device outlet; the electric field anode includes a first anode part and a second Two anode parts, the first anode part is close to the inlet of the electric field device, the second anode part is close to the outlet of the electric field device, and at least one cathode support plate is arranged between the first anode part and the second anode part .

8. Example 8 provided by the present invention: including the above example 7, wherein the electric field device further includes an insulation mechanism for achieving insulation between the cathode support plate and the electric field anode.

9. Example 9 provided by the present invention: including the above example 8, wherein an electric field flow channel is formed between the electric field anode and the electric field cathode, and the insulating mechanism is arranged outside the electric field flow channel.

10. Example 10 provided by the present invention: including the above examples 8 or 9, wherein the insulating mechanism includes an insulating part and a heat insulating part; the material of the insulating part is a ceramic material or a glass material.

11. Example 11 provided by the present invention: including the above example 10, wherein the insulating portion is an umbrella-shaped string ceramic column, an umbrella-shaped string glass column, a columnar string ceramic column or a columnar glass column, with glaze on the inside and outside of the umbrella or the inside and outside of the column.

12. Example 12 provided by the present invention: including the above example 11, wherein the distance between the outer edge of the umbrella string ceramic column or the umbrella string glass column and the electric field anode is more than 1.4 times the electric field distance, and the umbrella string The sum of the pitches of the umbrella protrusions of ceramic columns or umbrella-shaped glass columns is more than 1.4 times the insulation distance of the umbrella-shaped ceramic columns or umbrella-shaped glass columns. The total length of the umbrella edge of the umbrella-shaped ceramic columns or umbrella-shaped glass columns The insulation distance of the umbrella-shaped string ceramic column or umbrella-shaped string glass column is more than 1.4 times.

13. Example 13 provided by the present invention: including any one of the above examples 7 to 12, wherein the length of the first anode portion is 1/10 to 1/4, 1/4 to the length of the electric field anode 1/3, 1/3 to 1/2, 1/2 to 2/3, 2/3 to 3/4, or 3/4 to 9/10.

14. Example 14 provided by the present invention: includes any one of the above examples 7 to 13, wherein the length of the first anode part is long enough to remove part of dust and reduce accumulation in the insulation mechanism and The dust on the cathode support plate reduces the electric breakdown caused by the dust.

15. Example 15 provided by the present invention: includes any one of the above examples 7 to 14, wherein the second anode part includes a dust accumulation section and a reserved dust accumulation section.

16. Example 16: provided by the present invention: includes any one of the foregoing examples 2 to 15, wherein the electric field cathode includes at least one electrode rod.

17. Example 17 provided by the present invention: including the above example 16, wherein the diameter of the electrode rod is not greater than 3 mm.

18. Example 18 provided by the present invention: including the above examples 16 or 17, wherein the shape of the electrode rod is needle-like, polygonal, burr-like, threaded rod-like or cylindrical.

19. Example 19 provided by the present invention: includes any one of the foregoing Examples 2 to 18, wherein the electric field anode is composed of a hollow tube bundle.

20. Example 20 provided by the present invention: includes the above example 19, wherein the hollow cross section of the electric field anode tube bundle is circular or polygonal.

21. Example 21 provided by the present invention: includes the above example 20, wherein the polygon is a hexagon.

22. Example 22 provided by the present invention: includes any one of the above examples 18 to 21, wherein the tube bundle of the electric field anode is in a honeycomb shape.

23. Example 23 provided by the present invention: includes any one of the above examples 2 to 22, wherein the electric field cathode penetrates the electric field anode.

24. Example 24 provided by the present invention: includes any one of the foregoing Examples 2 to 23, wherein the electric field device further includes an auxiliary electric field unit for generating an auxiliary electric field that is not parallel to the ionization electric field.

25. Example 25 provided by the present invention: includes any one of the foregoing Examples 2 to 23, wherein the electric field device further includes an auxiliary electric field unit, the ionization electric field includes a flow channel, and the auxiliary electric field unit is used to generate and The auxiliary electric field where the flow channel is not vertical.

26. Example 26 provided by the present invention: includes the above examples 24 or 25, wherein the auxiliary electric field unit includes a first electrode, and the first electrode of the auxiliary electric field unit is arranged at or near the entrance of the ionization electric field.

27. Example 27 provided by the present invention: including the above example 26, wherein the first electrode is a cathode.

28. Example 28 provided by the present invention: including the above example 26 or 27, wherein the first electrode of the auxiliary electric field unit is an extension of the electric field cathode.

29. Example 29 provided by the present invention: including the above example 28, wherein the first electrode of the auxiliary electric field unit and the electric field anode have an included angle α, and 0°<α≤125°, or 45°≤α≤ 125°, or 60°≤α≤100°, or α=90°.

30. Example 30 provided by the present invention: includes any one of the foregoing Examples 24 to 29, wherein the auxiliary electric field unit includes a second electrode, and the second electrode of the auxiliary electric field unit is arranged at or near the ionizing electric field The exit.

31. Example 31 provided by the present invention: including the above example 30, wherein the second electrode is an anode.

32. Example 32 provided by the present invention: includes the above example 30 or 31, wherein the second electrode of the auxiliary electric field unit is an extension of the electric field anode.

33. Example 33 provided by the present invention: includes the above example 32, wherein the second electrode of the auxiliary electric field unit and the electric field cathode have an angle α, and 0°<α≤125°, or 45°≤α≤ 125°, or 60°≤α≤100°, or α=90°.

34. Example 34 provided by the present invention: includes any one of the foregoing Examples 24 to 27, 30 and 31, wherein the electrode of the auxiliary electric field and the electrode of the ionization electric field are arranged independently.

35. Example 35 provided by the present invention: includes any one of the foregoing Examples 2 to 34, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.

36. Example 36 provided by the present invention: includes any one of the foregoing Examples 2 to 34, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 6.67:1 to 56.67:1.

37. Example 37 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 Mm; the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.

38. Example 38 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the distance between the electric field anode and the electric field cathode is less than 150 mm.

39. Example 39 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm.

40. Example 40 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the distance between the electric field anode and the electric field cathode is 5-100 mm.

41. Example 41 provided by the present invention: includes any one of the foregoing Examples 2 to 40, wherein the length of the electric field anode is 10-180 mm.

42. Example 42 provided by the present invention: includes any one of the foregoing Examples 2 to 40, wherein the length of the electric field anode is 60-180 mm.

43. Example 43 provided by the present invention: includes any one of the foregoing Examples 2 to 42, wherein the length of the electric field cathode is 30-180 mm.

44. Example 44 provided by the present invention: includes any one of the foregoing Examples 2 to 42, wherein the length of the electric field cathode is 54-176 mm.

45. Example 45 provided by the present invention: includes any one of the foregoing Examples 24 to 44, wherein, when operating, the number of coupling times of the ionization electric field≤3.

46. Example 46 provided by the present invention: includes any one of the above examples 2 to 44, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode, the electric field anode and the electric field The distance between the cathodes, the length of the anode of the electric field, and the length of the cathode of the electric field make the coupling times of the ionization electric field ≤ 3.

47. Example 47 provided by the present invention: includes any one of the foregoing Examples 2 to 46, wherein the value range of the ionization electric field voltage is 1kv-50kv.

48. Example 48 provided by the present invention: includes any one of the foregoing Examples 2 to 47, wherein the electric field device further includes a plurality of connecting housings, and the series electric field stages are connected through the connecting housings.

49. Example 49 provided by the present invention: includes the above-mentioned example 48, wherein the distance between adjacent electric field levels is more than 1.4 times the pole pitch.

50. Example 50 provided by the present invention: includes any one of the foregoing Examples 2 to 49, wherein the electric field device further includes a front electrode, and the front electrode is connected to the electric field anode and the entrance of the electric field device. Between the ionizing electric field formed by the electric field cathode.

51. Example 51 provided by the present invention: includes the above example 50, wherein the front electrode is in the shape of a surface, a mesh, a hole plate, or a plate.

52. Example 52 provided by the present invention: includes the above example 50 or 51, wherein at least one through hole is provided on the front electrode.

53. Example 53 provided by the present invention: includes the above example 52, wherein the through hole is polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus.

54. Example 54 provided by the present invention: includes the above example 52 or 53, wherein the aperture of the through hole is 0.1-3 mm. 55. Example 55 provided by the present invention: includes any one of the foregoing Examples 50 to 54, wherein the front electrode is a combination of one or more of solid, liquid, gaseous molecular clusters, or plasma .

56. Example 56 provided by the present invention: includes any one of the foregoing Examples 50 to 55, wherein the front electrode is a conductive mixed state material, a biological body naturally mixes a conductive material, or an object is artificially processed to form a conductive material.

57. Example 57 provided by the present invention: includes any one of the foregoing Examples 50 to 56, wherein the front electrode is 304 steel or graphite.

58. Example 58 provided by the present invention: includes any one of the foregoing Examples 50 to 56, wherein the front electrode is an ion-containing conductive liquid.

59. Example 59 provided by the present invention: includes any one of the foregoing Examples 50 to 58, wherein, during operation, before air with particles enters the ionizing electric field formed by the electric field cathode and the electric field anode, When air passes through the front electrode, the front electrode charges particles in the air.

60. Example 60 provided by the present invention: includes the above-mentioned example 59, wherein when air with particles enters the ionization electric field, the electric field anode exerts an attractive force on the charged particles, causing the charged particles to move toward the electric field anode , Until the charged particles adhere to the electric field anode.

61. Example 61 provided by the present invention: including the above examples 59 or 60, wherein the front electrode introduces electrons into the particulate matter in the gas, and the electrons are transferred between the front electrode and the electric field anode To charge more particles in the gas.

62. Example 62 provided by the present invention: includes any one of the foregoing Examples 59 to 61, wherein the particles in the gas conduct electrons and form a current between the front electrode and the electric field anode.

63. Example 63 provided by the present invention: includes any one of the foregoing Examples 59 to 62, wherein the front electrode charges the particulate matter in the gas by contacting the particulate matter in the gas.

64. Example 64 provided by the present invention: includes any one of the foregoing Examples 59 to 63, wherein at least one through hole is provided on the front electrode.

65. Example 65 provided by the present invention: includes the above-mentioned example 64, wherein the particulate matter in the air is charged when air with particulate matter passes through the through hole on the front electrode.

66. Example 66 provided by the present invention: includes any one of the foregoing Examples 50 to 65, wherein the front electrode is perpendicular to the electric field anode.

67. Example 67 provided by the present invention: includes any one of the foregoing Examples 50 to 66, wherein the front electrode is parallel to the electric field anode.

68. Example 68 provided by the present invention: includes any one of the foregoing Examples 50 to 67, wherein the front electrode adopts a metal wire mesh.

69. Example 69 provided by the present invention: includes any one of the foregoing Examples 50 to 68, wherein the voltage between the front electrode and the electric field anode is different from that between the electric field cathode and the electric field anode The voltage.

70. Example 70 provided by the present invention: includes any one of the foregoing Examples 50 to 69, wherein the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage.

71. Example 71 provided by the present invention: includes any one of the foregoing Examples 50 to 70, wherein the voltage between the front electrode and the electric field anode is 0.1-2 kv/mm.

72. Example 72 provided by the present invention: includes any one of the foregoing Examples 50 to 71, wherein the electric field device includes a flow channel, the front electrode is located in the flow channel; the cross-sectional area of the front electrode The cross-sectional area ratio of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.

73. Example 73 provided by the present invention: A semiconductor manufacturing system, including the clean room system for semiconductor manufacturing according to any one of Examples 1-72 above, and further including:

The film preparation device is arranged in the clean room.

The thin film etching device is arranged in the clean room.

The ion doping device is arranged in the clean room.

74. Example 74 provided by the present invention: A multi-stage electric field dust removal method for a clean room system in semiconductor manufacturing, including the following steps:

Each electric field device connected in series through the multi-stage electric field dust removal system;

Apply a voltage to each electric field device, which is sufficient to ensure the total dust removal efficiency of the electric field dust removal system (100%-(100%-P ₁ %)*(100%-P ₂ %)*……*(100%-P _n %)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where P ₁ %, P ₂ %...P _n % are respectively the first level, the second level, the nth The dust removal efficiency of the first-class electric field device, n is an integer greater than 1;

Enter the dust-removed gas into the clean room.

75. Example 75 provided by the present invention: includes the above-mentioned example 74, wherein the voltage applied to each of the power supply devices is the same.

76. Example 76 provided by the present invention: includes the above example 74, wherein the voltage applied to each of the power supply devices is not exactly the same.

77. Example 77 provided by the present invention: including the above examples 74 or 76, the voltage applied to each of the power supply devices is completely different.

78. Example 78 provided by the present invention: includes any one of the foregoing Examples 74-77, wherein each electric field device that causes air to pass through the multi-stage electric field dust removal system in series includes: air passes through each electric field device to perform an electric field Dust removal, the electric field dust removal method includes the following steps:

The ionizing electric field generated by passing air through the electric field anode and electric field cathode.

79. Example 79 provided by the present invention: includes Example 78, wherein the electric field dust removal method further includes a method of providing an auxiliary electric field, including the following steps:

Pass air through a flow channel;

An auxiliary electric field is generated in the flow channel, and the auxiliary electric field is not perpendicular to the flow channel.

80. Example 80 provided by the present invention: includes Example 79, wherein the auxiliary electric field includes a first electrode, and the first electrode is disposed at or near the entrance of the ionization electric field.

81. Example 81 provided by the present invention: including Example 80, wherein the first electrode is a cathode.

82. Example 82 provided by the present invention: includes any one of Examples 80 or 81, wherein the first electrode is an extension of the electric field cathode.

83. Example 83 provided by the present invention: includes Example 82, wherein the first electrode and the electric field anode have an included angle α, and 0°<α≤125°, or 45°≤α≤125°, or 60 °≤α≤100°, or α=90°.

84. Example 84 provided by the present invention: includes any one of Examples 79 to 83, wherein the auxiliary electric field includes a second electrode, and the second electrode is disposed at or near the outlet of the ionization electric field.

85. Example 85 provided by the present invention: including Example 84, wherein the second electrode is an anode.

86. Example 86 provided by the present invention: includes Example 84 or 85, wherein the second electrode is an extension of the electric field anode.

87. Example 87 provided by the present invention: includes Example 86, wherein the second electrode and the electric field cathode have an angle α, and 0°<α≤125°, or 45°≤α≤125°, or 60 °≤α≤100°, or α=90°.

88. Example 88 provided by the present invention: includes any one of Examples 79 to 81, wherein the first electrode is arranged independently of the electric field anode and the electric field cathode.

89. Example 89 provided by the present invention: including Example 84 or 85, wherein the second electrode is arranged independently of the electric field anode and the electric field cathode.

90. Example 90 provided by the present invention includes any one of Examples 78 to 89, wherein the electric field dust removal method further includes a method for reducing the coupling of dust removal electric field, including the following steps:

Choose electric field anode parameters or/and electric field cathode parameters to reduce the number of electric field couplings.

91. Example 91 provided by the present invention: including Example 90, which includes selecting the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode.

92. Example 92 provided by the present invention includes Example 91, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 1.667:1 to 1680:1.

93. Example 93 provided by the present invention includes Example 91, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 6.67:1 to 56.67:1.

94. Example 94 provided by the present invention: including any one of Examples 90 to 93, including selecting the electric field cathode to have a diameter of 1-3 mm, and the distance between the electric field anode and the electric field cathode to be 2.5-139.9 mm The ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.

95. Example 95 provided by the present invention: includes any one of Examples 90 to 94, wherein the distance between the electric field anode and the electric field cathode is selected to be less than 150 mm.

96. Example 96 provided by the present invention: includes any one of Examples 90 to 94, wherein the distance between the electric field anode and the electric field cathode is selected to be 2.5-139.9 mm.

97. Example 97 provided by the present invention: includes any one of Examples 90 to 94, wherein the distance between the electric field anode and the electric field cathode is selected to be 5-100 mm.

98. Example 98 provided by the present invention: includes any one of Examples 90 to 97, which includes selecting the electric field anode length to be 10-180 mm.

99. Example 99 provided by the present invention: includes any one of Examples 90 to 97, including selecting the electric field anode length to be 60-180 mm.

100. Example 100 provided by the present invention: includes any one of Examples 90 to 99, including selecting the electric field cathode length to be 30-180 mm.

101. Example 101 provided by the present invention: includes any one of Examples 90 to 99, including selecting the electric field cathode length to be 54-176 mm.

102. Example 102 provided by the present invention: includes any one of Examples 90 to 101, wherein it includes selecting that the electric field cathode includes at least one electrode rod.

103. Example 103 provided by the present invention: includes Example 102, which includes selecting the electrode rod to have a diameter not greater than 3 mm.

104. Example 104 provided by the present invention: includes example 102 or 103, which includes selecting the shape of the electrode rod to be needle-shaped, polygonal, burr-shaped, threaded rod-shaped, or columnar.

105. Example 105 provided by the present invention: includes any one of Examples 90 to 104, wherein it includes selecting that the electric field anode is composed of a hollow tube bundle.

106. Example 106 provided by the present invention: includes Example 105, wherein the hollow section including the selection of the anode tube bundle is circular or polygonal.

107. Example 107 provided by the present invention: includes example 106, which includes selecting the polygon as a hexagon.

108. Example 108 provided by the present invention: includes any one of Examples 105 to 107, wherein the tube bundle including the selection of the electric field anode is in a honeycomb shape.

109. Example 109 provided by the present invention: includes any one of Examples 90 to 108, including selecting the electric field cathode to penetrate into the electric field anode.

110. Example 110 provided by the present invention: includes any one of Examples 90 to 109, wherein the size of the electric field anode or/and the electric field cathode is selected so that the number of electric field couplings is ≤3.

111. Example 111 provided by the present invention: A method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room, including the following steps:

Select the number n of electric field devices in the multi-level electric field dust removal system and the voltage of each electric field device power supply to make the total dust removal efficiency of the multi-level electric field dust removal system (100%-(100%-P ₁ %)*(100%-P ₂ %)* ……*(100%-P _n ％)) is greater than or equal to a predetermined value, and ozone output is less than or equal to a predetermined value, where P ₁ ％, P ₂ ％……P _n ％ are the first level respectively , The second level, ... the dust removal efficiency of the nth level electric field device, n is an integer greater than 1.

112. The example 112 provided by the present invention includes the above example 111, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the same voltage of each electric field device power supply in the multi-level electric field dust removal system.

113. The example 113 provided by the present invention includes the above example 111, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system is not exactly the same.

114. Example 114 provided by the present invention: includes the above example 111 or 113, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system completely different the same.

115. Example 115 provided by the present invention: a semiconductor manufacturing method including the following steps:

Use the multi-stage electric field dust removal method described in any one of Examples 74-110 to remove particulate matter in the gas; the gas after dust removal is input into the clean room;

In the clean room, a thin film is formed on the substrate;

In a clean room, a channel is formed on the film, and the channel exposes the surface of the substrate;

In the clean room, ion infiltration is performed on the substrate exposed by the trench to form a specific structure with electronic characteristics.

In Example 6, Example 74, and Example 111 provided by the present invention, the ozone output is less than or equal to a predetermined value, and the predetermined value refers to 30 ppm (parts-per-million), or 10 ppm, or 5 ppm, or 3 ppm, Or 1ppm, or 0.1ppm.

The present invention has the following beneficial effects:

The existing semiconductor manufacturing plant is a three-story building. The filter purification system of the clean room requires a separate building. The construction cost is about 300 US dollars/m ^2. Therefore, the existing purification system takes up a large space and the construction cost is also high. Some embodiments of the invention can reduce the volume and area by more than 10 times, and save the construction cost, making the present invention small in size and low in cost.

At the same time, the resistance of the ultra-high efficiency filter in the prior art is often more than 1500 Pa, and the resistance of each 1000 kW requires the motor to consume 1000 kW, so the energy consumption of the fan is high. The resistance of some embodiments of the present invention is only about 100 Pa. It can save about 15 times and consume less power.

Moreover, the existing electric field dust removal technology controls the amount of ozone produced at the cost of reducing the dust removal efficiency to ensure that the ozone does not exceed the standard. The present invention ensures the total dust removal efficiency while controlling the amount of ozone produced below a predetermined value. In some embodiments of the present invention, the removal efficiency of 23nm particles can reach 99.99% or more, and the ozone output can be controlled below a predetermined value to meet the requirements of semiconductor manufacturing plants for gas entering the clean room.

Description of the drawings

FIG. 1 is a schematic diagram of the structure of an electric field device in Embodiment 1 of the present invention.

2 is a schematic diagram of the structure of the electric field generating unit in the embodiment 2-11 of the present invention.

Fig. 3 is an A-A view of the electric field generating unit of Fig. 2 in embodiment 2 and embodiment 5 of the present invention.

Fig. 4 is an A-A view of the electric field generating unit of Fig. 2 with length and angle marked in embodiment 2 and embodiment 5 of the present invention.

FIG. 5 is a schematic diagram of the structure of two electric field devices in embodiment 2 and embodiment 5 of the present invention.

6 is a schematic diagram of the structure of an electric field device in Embodiment 12 of the present invention.

FIG. 7 is a schematic structural diagram of an electric field device in Embodiment 14 of the present invention.

FIG. 8 is a schematic structural diagram of an electric field device in Embodiment 15 of the present invention.

FIG. 9 is a schematic structural diagram of an electric field device in Embodiment 16 of the present invention.

Fig. 10 is a schematic structural diagram of a clean room system in embodiment 18 of the present invention.

Fig. 11 is a schematic structural diagram of a clean room system in embodiment 19 of the present invention.

Detailed ways

The following specific examples illustrate the implementation of the present invention. Those familiar with the technology can easily understand the other advantages and effects of the present invention from the content disclosed in this specification.

It should be noted that the structures, proportions, sizes, etc. shown in the accompanying drawings in this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not intended to limit the implementation of the present invention Limited conditions, so it has no technical significance. Any structural modification, proportional relationship change or size adjustment should still fall under the present invention without affecting the effects and objectives that can be achieved by the present invention. The disclosed technical content must be within the scope of coverage. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" cited in this specification are only for the convenience of description and are not used to limit the text. The scope of implementation of the invention, the change or adjustment of its relative relationship, without substantial changes to the technical content, shall also be regarded as the scope of implementation of the invention. The terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance.

As described above, compared with the prior art, some embodiments of the present invention can reduce the volume and area by more than 10 times, and save the construction cost, making the present invention small in size and low in cost. The resistance of the ultra-high efficiency filter in the prior art is often more than 1500 Pa, and every 1000 kW of resistance requires the motor to consume 1000 kW of electricity, so the energy consumption of the fan is high. The resistance of some embodiments of the present invention is only about 100 Pa, and the power consumption can be saved. About 15 times, low power consumption.

Moreover, the existing electric field dust removal technology controls the amount of ozone generated at the expense of reducing dust removal efficiency to ensure that the ozone does not exceed the standard. Some embodiments of the present invention ensure the total dust removal efficiency while controlling the amount of ozone generated below a predetermined value.

An embodiment of the present invention provides a clean room system for semiconductor manufacturing, including a clean room and a multi-level electric field dust removal system; the clean room includes a gas inlet; the multi-level electric field dust removal system includes a dust removal system inlet and a dust removal system outlet At least two electric field devices connected in series; the gas inlet of the clean room is connected with the dust removal system outlet of the multi-stage electric field dust removal system.

In an embodiment of the present invention, each of the electric field devices includes an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionizing electric field. In an embodiment of the present invention, the multi-stage electric field dust removal system includes a power supply device, and the electric field anode and the electric field cathode of each electric field device are electrically connected to two electrodes of the power supply device.

In some embodiments of the present invention, the power supply device can provide the same voltage for different electric field devices. For example, the multi-stage electric field dust removal system includes a first-stage electric field device, a second-stage electric field device, and a third-stage electric field device sequentially connected in series, the power supply device includes a first power source, the first-stage electric field device, and the second electric field device. The electric field anode and the electric field cathode of the first-level electric field device and the third-level electric field device are respectively electrically connected to the two electrodes of the first power source. The first power source is the first-level electric field device, the second-level electric field device, and the third-level electric field. The device provides the same voltage at the same time.

In some embodiments of the present invention, the power supply device can provide different voltages for different electric field devices. For example, the multi-stage electric field dust removal system includes a first-stage electric field device, a second-stage electric field device, and a third-stage electric field device sequentially connected in series, as required by the first-stage electric field device, the second-stage electric field device, and the third-stage electric field device. The voltages are all different. The power supply device may include a first power supply, a second power supply, and a third power supply. The two electrodes of the first power supply are electrically connected to the electric field anode and the electric field cathode of the first-level electric field device. Each electrode is electrically connected to the electric field anode and the electric field cathode of the second-level electric field device, and the two electrodes of the third power source are respectively electrically connected to the electric field anode and the electric field cathode of the third-level electric field device. , The third power supply provides different voltages.

In some embodiments of the present invention, the power supply device may provide part of the same voltage for each electric field device. For example, the multi-stage electric field dust removal system includes a first-stage electric field device, a second-stage electric field device, and a third-stage electric field device connected in series in sequence. The first-stage electric field device and the second-stage electric field device require the same voltage. The voltage required for the electric field device is different from the voltages of the first-level electric field device and the second-level electric field device. The power supply device may include a first power source and a second power source. The two electrodes of the first power supply are electrically connected. The electric field anode and the electric field cathode of the second electric field device are electrically connected to the two electrodes of the first power supply. The first power supply is the first electric field device and the second electric field device at the same time. Power supply; the electric field anode and the electric field cathode of the third-level electric field device are electrically connected to the two electrodes of the second power supply. The second power supply supplies power for the third-level electric field device, and the first and second power supplies provide different voltages.

In some embodiments of the present invention, the voltage value provided by the power supply device to each electric field device is sufficient to ensure the total dust removal efficiency of the multi-stage electric field dust removal system (100%-(100%-P ₁ %)*(100%-P ₂ %)*……*(100％-P _n ％)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where P ₁ ％, P ₂ ％...P _n ％ are respectively In the multi-level electric field dust removal system, the dust removal efficiency of the first level electric field device, the second level electric field device, ... the nth level electric field device, n is an integer greater than 1.

In some embodiments of the present invention, the power supply device provides the same voltage for each of the electric field devices in the multi-stage electric field dust removal system, and the voltage value is sufficient to ensure the total dust removal efficiency of the electric field dust removal system (100%-(100%) -P ₁ ％)*(100％-P ₂ ％)*……*(100％-P _n ％)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where P ₁ ％ , P ₂ %...P _n % are respectively the dust removal efficiency of the first stage, the second stage, and the nth stage of the electric field device, and n is an integer greater than 1.

In an embodiment of the present invention, the power supply device provides different voltages for each electric field device, and the voltage of each electric field device makes the ozone output of the ionization electric field less than a predetermined value. Respectively P ₁ ％, P ₂ ％……P _n ％, n is an integer greater than 1, while ensuring the total dust removal efficiency of the electric field dust removal system (100%-(100%-P ₁ %)*(100%-P ₂ %) )*...*(100%-P _n %)) is greater than a predetermined value. The power supply device providing different voltages for each electric field device includes providing different voltages and completely different voltages for each electric field device.

In an embodiment of the present invention, the multi-stage electric field dust removal system includes n-stage electric field devices, where n is an integer greater than 1, and the dust removal efficiency of the electric field devices at each level is P ₁ %, P ₂ %, P ₃ %, ... …P _n %, the total dust removal efficiency of the multi-stage electric field dust removal system is (100%-(100%-P ₁ %)*(100%-P ₂ %)*(100%-P ₃ %)*…… *(100%-P _n %)).

In some embodiments of the present invention, the structure of each electric field device in the multi-stage electric field dust removal system may be completely the same, may not be completely the same, or may be completely different.

In some embodiments of the present invention, a multi-stage electric field dust removal method for a clean room system used in semiconductor manufacturing is provided, which includes the following steps:

Each electric field device connected in series to make the gas pass through the multi-stage electric field dust removal system;

Apply a voltage to each electric field device, which is sufficient to ensure the total dust removal efficiency of the electric field dust removal system (100%-(100%-P ₁ %)*(100%-P ₂ %)*……*(100%-P _n %)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where P ₁ %, P ₂ %...P _n % are respectively the first level, the second level, ... the nth For the dust removal efficiency of the first-class electric field device, n is an integer greater than 1; the gas after dust removal is input into the clean room.

In an embodiment of the present invention, each electric field device that passes air through a multi-stage electric field dust removal system in series includes: air passes through each electric field device to perform electric field dust removal, and the electric field dust removal method includes the following steps:

In one embodiment of the present invention, the present invention provides a multi-stage electric field dust removal method for a clean room system used in semiconductor manufacturing, including the following steps: passing air through at least two ionization electric fields connected in series.

In some embodiments of the present invention, the voltage applied to each of the power supply devices may be the same. In some embodiments of the present invention, the voltage applied to each of the power supply devices is not completely the same. In some embodiments of the present invention, the voltage applied to each of the power supply devices may be completely different.

In some embodiments of the present invention, a method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room is provided, which includes the following steps:

Select the number n of electric field devices in the multi-level electric field dust removal system and the voltage of each electric field device power supply to make the total dust removal efficiency of the electric field dust removal system (100%-(100%-P ₁ %)*(100%-P ₂ %)*…… *(100%-P _n %)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where P ₁ ％, P ₂ ％...P _n ％ are the first level, the first The dust removal efficiency of level 2...nth level electric field device, n is an integer greater than 1.

In some embodiments of the present invention, the selecting the voltage of each electric field device in the multi-level electric field dust removal system includes: selecting the same voltage of each electric field device in the multi-level electric field dust removal system.

In some embodiments of the present invention, the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system is not completely the same.

In some embodiments of the present invention, selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system includes: selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system to be completely different.

An embodiment of the present invention relates to a design method of a multi-stage electric field dust removal system. In this method, when the dust removal efficiency of the multi-stage electric field dust removal system is less than a predetermined value and/or the ozone output is greater than a predetermined value, reduce the voltage of at least one electric field device of the multi-stage electric field dust removal system to reduce the ozone output, and/ Or increase the number of electric field devices to increase the dust removal efficiency of the multi-level electric field dust removal system until the dust removal efficiency and ozone output both reach the predetermined value. The reason why this method can be realized is that in a certain voltage range, reducing the voltage will reduce the ozone output, but also reduce the dust removal efficiency, but the reduction in ozone output is greater than the reduction in dust removal efficiency.

In some embodiments of the present invention, a semiconductor manufacturing system is provided, including: the clean room system for semiconductor manufacturing according to the present invention, the clean room system including a clean room and a multi-level electric field dust removal system; and further including:

The thin film preparation device is set in a clean room and is used to form a thin film on a substrate. Any applicable related device in the prior art can be selected.

The thin film etching device is arranged in a clean room and is used to etch the thin film to form a channel. Any applicable related device in the prior art can be selected.

The ion doping device is arranged in a clean room and is used to form a specific structure with electronic characteristics on the substrate exposed by the trench. Any applicable related device in the prior art can be selected.

Some embodiments of the present invention also provide a semiconductor manufacturing method, including the following steps:

S1: Air dust removal: the use of multi-stage electric field dust removal method to remove particles in the gas; the purified gas after multi-stage electric field dust removal enters the clean room;

S2, forming a thin film on the substrate;

S3, forming a channel on the film, the channel exposing the surface of the substrate;

S4, ion infiltration is performed on the substrate exposed by the trench to form a specific structure with electronic characteristics.

In an embodiment of the present invention, in step S3, the groove formation includes the following steps:

Coating photoresist on the surface of the film;

Exposing the photoresist through a mask;

Developing the photoresist and cleaning and removing part of the photoresist, exposing part of the film surface;

The exposed film is etched to expose part of the substrate surface to form a channel.

In an embodiment of the present invention, the photoresist is a positive resist or a reverse resist.

In an embodiment of the present invention, in step S2, the material of the substrate is silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide, or any other applicable material.

In an embodiment of the present invention, in step S2, the thin film is formed by CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition) process, or other conventional applicable film formation method.

In an embodiment of the present invention, in step S2, the main component of the thin film is silicon nitride, silicon oxide, silicon carbide, polysilicon, or any combination of the above, or any other applicable substance.

In some embodiments of the present invention, in step S3, the method of forming the channel may be any suitable method, for example, coating photoresist on the surface of the film, and placing a mask plate with a mask pattern on the photoresist Above, the mask is irradiated with a light source, the photoresist is exposed through the mask, and part of the photoresist is cleaned and removed, exposing part of the film surface. Wherein, the light source can be any suitable light source, such as ultraviolet, deep ultraviolet or extreme ultraviolet. The photoresist can be positive or negative. When the positive photoresist is selected, the part of the photoresist irradiated by the light source is easily washed off by the developer, and the part not irradiated by the light source is not easily washed off by the developer and remains on the film. On the contrary, when the negative resin is selected, the part of the photoresist irradiated by the light source is not easily washed off by the developer and remains on the film, while the part not irradiated by the light source is easily washed off by the developer. Regardless of whether the positive or negative resist is selected, a part of the photoresist will be washed away, and another part of the photoresist will remain on the film, so that the mask pattern on the mask plate is developed on the photoresist. According to the mask pattern developed on the photoresist, the part of the film exposed after the photoresist is washed is etched away to form a channel and expose the bottom substrate. Wherein, the etching method may be any suitable method, for example, dry etching or wet etching is used. When dry etching is used, sputter etching and other methods can be used to etch the film, which has good selectivity. When wet etching is selected, a chemical etching solution such as hydrogen fluoride solution can be used to etch away the part of the film in contact with the chemical etching solution, which has the characteristics of fast etching rate, deep thickness and high sensitivity.

In an embodiment of the present invention, in step S4, the ion infiltration may be diffusion or ion implantation, or any other applicable method.

In an embodiment of the present invention, in step S4, the electronic characteristic is a PN junction.

In an embodiment of the present invention, in step S4, ions are allowed to penetrate into the substrate on the substrate exposed after etching to form a specific structure with electronic characteristics such as a PN junction.

In an embodiment of the present invention, each electric field device of the multi-stage electric field dust removal system may include an electric field device inlet, an electric field device outlet, an electric field cathode, and an electric field anode. The electric field cathode and the electric field anode are used to generate an ionizing electric field. When the gas enters the ionization electric field, the oxygen in the gas will be ionized to form a large number of charged oxygen ions. The oxygen ions combine with dust and other particles in the gas to charge the particles. The electric field anode exerts an adsorption force on the negatively charged particles. The particles are adsorbed on the anode of the electric field to remove the particles in the gas.

In an embodiment of the present invention, the electric field cathode includes a plurality of cathode wires. The diameter of the cathode wire can be 0.1mm-20mm, and the size parameter can be adjusted according to the application situation and dust accumulation requirements. In an embodiment of the present invention, the diameter of the cathode wire is not greater than 3 mm. In an embodiment of the present invention, the cathode wire uses a metal wire or an alloy wire that is easy to discharge, is temperature-resistant, can support its own weight, and is electrochemically stable. In an embodiment of the present invention, the material of the cathode wire is titanium. The specific shape of the cathode wire is adjusted according to the shape of the electric field anode. For example, if the dust accumulation surface of the electric field anode is flat, the cross section of the cathode wire is circular; if the dust accumulation surface of the electric field anode is an arc surface, the cathode wire needs to be designed as Polyhedral. The length of the cathode wire is adjusted according to the electric field anode.

In an embodiment of the present invention, the electric field cathode includes a plurality of cathode rods. In an embodiment of the present invention, the diameter of the cathode rod is not greater than 3 mm. In an embodiment of the present invention, the cathode rod uses a metal rod or alloy rod that is easy to discharge. The shape of the cathode rod can be needle-like, polygonal, burr-like, threaded rod-like or column-like. The shape of the cathode rod can be adjusted according to the shape of the electric field anode. For example, if the dust accumulation surface of the electric field anode is flat, the cross section of the cathode rod needs to be designed to be circular; if the dust accumulation surface of the electric field anode is an arc surface, the cathode The rod needs to be designed in a multi-faceted shape.

In an embodiment of the present invention, the electric field cathode is penetrated in the electric field anode.

In an embodiment of the present invention, the electric field anode includes one or more hollow anode tubes arranged in parallel. When there are multiple hollow anode tubes, all the hollow anode tubes constitute a honeycomb electric field anode. In an embodiment of the present invention, the cross section of the hollow anode tube may be circular or polygonal. If the cross section of the hollow anode tube is circular, a uniform electric field can be formed between the electric field anode and the electric field cathode, and the inner wall of the hollow anode tube is not easy to accumulate dust. If the hollow anode tube has a triangular cross section, 3 dust accumulation surfaces and 3 remote dust holding angles can be formed on the inner wall of the hollow anode tube. The hollow anode tube with this structure has the highest dust holding rate. If the cross section of the hollow anode tube is quadrilateral, 4 dust accumulation surfaces and 4 dust holding angles can be obtained, but the assembly structure is unstable. If the cross section of the hollow anode tube is hexagonal, 6 dust accumulation surfaces and 6 dust retention angles can be formed, and the dust accumulation surface and dust retention rate are balanced. If the cross section of the hollow anode tube is more polygonal, more dust accumulation edges can be obtained, but the dust holding rate is lost. In an embodiment of the present invention, the diameter of the tube inscribed circle of the hollow anode tube ranges from 5 mm to 400 mm.

In an embodiment of the present invention, the electric field cathode is installed on the cathode support plate, and the cathode support plate and the electric field anode are connected by an insulating mechanism. The insulation mechanism is used to achieve insulation between the cathode support plate and the electric field anode. In an embodiment of the present invention, the electric field anode includes a first anode part and a second anode part, that is, the first anode part is close to the inlet of the electric field device, and the second anode part is close to the outlet of the electric field device. The cathode support plate and the insulation mechanism are between the first anode part and the second anode part, that is, the insulation mechanism is installed in the middle of the ionization electric field or the middle of the electric field cathode, which can support the electric field cathode and play a good role in the electric field cathode. Relative to the fixing effect of the electric field anode, the electric field cathode and the electric field anode maintain a set distance. In the prior art, the support point of the cathode is at the end of the cathode, and it is difficult to maintain the distance between the cathode and the anode. In one embodiment of the present invention, the insulation mechanism is arranged outside the electric field flow channel, that is, outside the electric field flow channel, to prevent or reduce dust in the gas from gathering on the insulation mechanism, causing the insulation mechanism to break down or conduct electricity.

In an embodiment of the present invention, the insulation mechanism adopts a high-voltage resistant ceramic insulator to insulate the electric field cathode and the electric field anode. The electric field anode is also called a kind of housing.

In an embodiment of the present invention, the first anode part is located before the cathode support plate and the insulating mechanism in the gas flow direction. The first anode part can remove water in the gas and prevent water from entering the insulating mechanism, causing the insulating mechanism to short-circuit and ignite. . In addition, the first anode part can remove a considerable part of the dust in the gas. When the gas passes through the insulating mechanism, a considerable part of the dust has been eliminated, reducing the possibility of short-circuiting of the insulating mechanism caused by the dust. In an embodiment of the present invention, the insulating mechanism includes insulating ceramic pillars. The design of the first anode part is mainly to protect the insulating ceramic pillars from being polluted by the particles in the gas. Once the insulating ceramic pillars are polluted by the gas, the electric field anode and the electric field cathode will be connected, which will invalidate the dust accumulation function of the electric field anode. The design of an anode part can effectively reduce the pollution of the insulating ceramic pillar and increase the use time of the product. When the gas flows through the electric field flow channel, the first anode part and the electric field cathode first contact the polluting gas, and then the insulating mechanism contacts the gas to achieve the purpose of first removing dust and then passing through the insulating mechanism, reducing pollution to the insulating mechanism and extending The cleaning and maintenance cycle corresponds to the insulating support of the electrode after use. The length of the first anode part is long enough to remove some dust, reduce dust accumulated on the insulation mechanism and the cathode support plate, and reduce electric breakdown caused by the dust. In an embodiment of the present invention, the length of the first anode portion occupies 1/10 to 1/4, 1/4 to 1/3, 1/3 to 1/2, 1/2 to 2/3 of the total length of the electric field anode. 2/3 to 3/4, or 3/4 to 9/10.

In an embodiment of the present invention, the second anode part is located behind the cathode support plate and the insulating mechanism in the gas flow direction. The second anode part includes a dust accumulation section and a reserved dust accumulation section. Among them, the dust accumulation section uses static electricity to adsorb particulate matter in the gas. The dust accumulation section is to increase the dust accumulation area and prolong the use time of the electric field device. The reserved dust section can provide failure protection for the dust section. The dust accumulation section is reserved to further increase the dust accumulation area and improve the dust removal effect under the premise of meeting the design dust removal requirements. The dust accumulation section is reserved to supplement the dust accumulation in the front section. In an embodiment of the present invention, the first anode part and the second anode part may use different power sources.

In an embodiment of the present invention, due to the extremely high potential difference between the electric field cathode and the electric field anode, in order to prevent the electric field cathode and the electric field anode from conducting, the insulating mechanism is arranged outside the electric field flow channel between the electric field cathode and the electric field anode. Therefore, the insulation mechanism is suspended outside the electric field anode. In an embodiment of the present invention, the insulating mechanism may be made of non-conductor temperature-resistant materials, such as ceramics, glass, and the like. In an embodiment of the present invention, the material insulation that is completely airtight and air-free requires an insulation isolation thickness of> 0.3 mm/kv; and air insulation requires> 1.4 mm/kv. The insulation distance can be set according to 1.4 times the distance between the electric field cathode and the electric field anode. In an embodiment of the present invention, the insulating mechanism uses ceramics, and the surface is glazed; adhesives or organic materials cannot be used to fill the connection, and the temperature resistance is greater than 350 degrees Celsius.

In an embodiment of the present invention, the insulation mechanism includes an insulation part and a heat insulation part. In order to make the insulating mechanism have anti-fouling function, the material of the insulating part is ceramic material or glass material. In an embodiment of the present invention, the insulating part may be an umbrella-shaped string of ceramic pillars or glass pillars with glaze on the inside and outside of the umbrella. The distance between the outer edge of the umbrella string ceramic column or the glass column and the electric field anode is greater than or equal to 1.4 times the electric field distance, that is, greater than or equal to 1.4 times the electrode pitch. The sum of the pitches of umbrella protrusions of the umbrella string ceramic columns or glass columns is greater than or equal to 1.4 times the insulation pitch of the umbrella string ceramic columns. The total inner depth of the umbrella side of the umbrella string ceramic column or the glass column is greater than or equal to 1.4 times the insulation distance of the umbrella string ceramic column. The insulating part can also be a columnar string of ceramic columns or glass columns with glaze on the inside and outside of the columns. In an embodiment of the present invention, the insulating portion may also be tower-shaped.

In an embodiment of the present invention, a heating rod is arranged in the insulating part, and when the temperature around the insulating part approaches the dew point, the heating rod is activated and heated. Due to the temperature difference between the inside and outside of the insulating part during use, condensation is likely to occur on the inside and outside of the insulating part. The outer surface of the insulating part may spontaneously or be heated by gas to generate high temperature, and necessary isolation protection is required to prevent burns. The heat insulation part includes a protective enclosure and a denitration purification reaction chamber located outside the insulation part. In an embodiment of the present invention, the end of the insulating part that needs condensation location also needs to be insulated to prevent the environment and the heat dissipation high temperature heating condensation component.

In an embodiment of the present invention, the lead wires of the power supply of the electric field device are connected through the wall using umbrella-shaped string ceramic pillars or glass pillars, using elastic contacts to connect the cathode support plate in the wall, and plugging and unplugging the sealed insulating protective wiring cap outside the wall. The insulation distance between the lead wire and the wall conductor and the wall is greater than the ceramic insulation distance of the umbrella string ceramic column or glass column. In an embodiment of the present invention, the high voltage part removes the lead wire and is directly installed on the end to ensure safety. The overall external insulation of the high voltage module is protected by ip68, and the medium is used for heat exchange and heat dissipation.

In an embodiment of the present invention, the electric field anode and the electric field cathode are respectively electrically connected to the two electrodes of the power supply. The voltage applied to the electric field anode and the electric field cathode needs to select an appropriate voltage level. The specific voltage level selected depends on the volume, temperature resistance, and dust holding rate of the electric field device. For example, the voltage is from 1kv to 50kv; first consider the temperature resistance conditions in the design, the parameters of the pole spacing and temperature: 1MM<30 degrees, the dust area is greater than 0.1 square / thousand cubic meters / hour, and the electric field length is greater than 5 of the inscribed circle of a single tube The air flow velocity of the control electric field is less than 9 m/s. In an embodiment of the present invention, the electric field anode is composed of a first hollow anode tube and has a honeycomb shape. The shape of the first hollow anode tube port may be circular or polygonal. In an embodiment of the present invention, the inscribed circle of the first hollow anode tube ranges from 5-400mm, and the corresponding voltage is between 0.1-120kv, and the corresponding current of the first hollow anode tube is between 0.1-30A; The tangent circle corresponds to different corona voltages, about 1KV/1MM.

In an embodiment of the present invention, the electric field device includes an electric field stage, the electric field stage includes a plurality of electric field generating units, and there may be one or more electric field generating units. The electric field generating unit is also called a dust collecting unit. The dust collecting unit includes the above-mentioned electric field anode and electric field cathode, and there are one or more dust collecting units. When there are multiple electric field levels, the dust collection efficiency of the electric field device can be effectively improved. In the same electric field level, each electric field anode has the same polarity, and each electric field cathode has the same polarity. And when there are multiple electric field levels, the electric field levels are connected in series. In an embodiment of the present invention, the electric field device further includes a plurality of connecting shells, and the series electric field stages are connected by the connecting shells; the distance between the electric field stages of two adjacent stages is more than 1.4 times the pole pitch.

The inventor of the present invention has discovered through research that the disadvantages of poor removal efficiency and high energy consumption of existing electric field devices are caused by electric field coupling. The invention can significantly reduce the size (namely volume) of the electric field dust removal device by reducing the number of electric field couplings. For example, the size of the ionization dust removal device provided by the present invention is about one-fifth of the size of the existing ionization dust removal device. The reason is that in order to obtain an acceptable particle removal rate, the gas flow rate in the existing ionization dust removal device is set to about 1m/s, and the present invention can still obtain a higher gas flow rate when the gas flow rate is increased to 6m/s. Particle removal rate. When processing a given flow of gas, as the gas velocity increases, the size of the electric field dust removal device can be reduced.

In addition, the present invention can significantly improve the particle removal efficiency. For example, when the gas flow rate is about 1m/s, the prior art electric field dust removal device can remove about 70% of the particulate matter in the engine exhaust, but the present invention can remove about 99% of the particulate matter, even when the gas flow rate is 6m/s .

Since the inventor discovered the effect of electric field coupling and found a method to reduce the number of times of electric field coupling, the present invention achieved the above unexpected results.

The scheme for reducing the number of electric field coupling provided by the present invention is as follows:

In an embodiment of the present invention, an asymmetric structure is adopted between the electric field cathode and the electric field anode. In a symmetric electric field, polar particles are subjected to a force of the same magnitude but opposite in direction, and the polar particles reciprocate in the electric field; in an asymmetric electric field, the polar particles are subjected to two different forces, and the polar particles act towards Move in the direction of great force to avoid coupling.

The electric field device of the present invention forms an ionizing electric field between the electric field cathode and the electric field anode. In order to reduce the electric field coupling of the ionizing electric field, in an embodiment of the present invention, the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode so that the number of electric field couplings is ≤3. In an embodiment of the present invention, the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode may be: 1.667:1 to 1680:1; 3.334:1 to 13.34:1; 6.67:1-56.67:1; 13.34: 1-28.33:1. This embodiment selects the dust collecting area of the electric field anode with a relatively large area and the discharge area of the relatively small electric field cathode. The specific selection of the above area ratio can reduce the discharge area of the electric field cathode, reduce the suction force, and expand the dust collecting area of the electric field anode. , Expand the suction, that is, the asymmetric electrode suction between the electric field cathode and the electric field anode will cause the charged dust to fall on the dust collecting surface of the electric field anode. Although the polarity is changed, it can no longer be sucked away by the electric field cathode, and the electric field coupling is reduced. Achieve electric field coupling times ≤ 3. That is, when the electric field distance is less than 150mm, the number of electric field couplings is less than or equal to 3, and the electric field energy consumption is low. The dust collection area refers to the area of the working surface of the electric field anode. For example, if the electric field anode is a hollow regular hexagon tube, the dust collection area is the inner surface area of the hollow regular hexagon tube, and the dust collection area is also called the dust accumulation area. The discharge area refers to the area of the working surface of the electric field cathode. For example, if the electric field cathode is rod-shaped, the discharge area is the rod-shaped outer surface area.

In an embodiment of the present invention, the length of the electric field anode may be 10-180mm, 10-20mm, 20-30mm, 60-180mm, 30-40mm, 40-50mm, 50-60mm, 60-70mm, 70-80mm, 80mm. -90mm, 90-100mm, 100-110mm, 110-120mm, 120-130mm, 130-140mm, 140-150mm, 150-160mm, 160-170mm, 170-180mm, 60mm, 180mm, 10mm or 30mm. The length of the electric field anode refers to the minimum length from one end to the other end of the working surface of the electric field anode. Choosing this length of the electric field anode can effectively reduce the electric field coupling.

In an embodiment of the present invention, the length of the electric field cathode may be 30-180mm, 54-176mm, 30-40mm, 40-50mm, 50-54mm, 54-60mm, 60-70mm, 70-80mm, 80-90mm, 90mm. -100mm, 100-110mm, 110-120mm, 120-130mm, 130-140mm, 140-150mm, 150-160mm, 160-170mm, 170-176mm, 170-180mm, 54mm, 180mm, or 30mm. The length of the electric field cathode refers to the minimum length from one end to the other end of the working surface of the electric field cathode. Choosing this length of the electric field cathode can effectively reduce the electric field coupling.

In an embodiment of the present invention, the distance between the electric field anode and the electric field cathode may be 5-30mm, 2.5-139.9mm, 9.9-139.9mm, 2.5-9.9mm, 9.9-20mm, 20-30mm, 30-40mm, 40mm. -50mm, 50-60mm, 60-70mm, 70-80mm, 80-90mm, 90-100mm, 100-110mm, 110-120mm, 120-130mm, 130-139.9mm, 9.9mm, 139.9mm, or 2.5mm. The distance between the anode of the electric field and the cathode of the electric field is also referred to as the electrode pitch. The pole distance specifically refers to the minimum vertical distance between the working surfaces of the electric field anode and the electric field cathode. The selection of this pole spacing can effectively reduce the electric field coupling and make the electric field device have high temperature resistance characteristics.

In an embodiment of the present invention, the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm; the dust accumulation area of the electric field anode and the electric field cathode The ratio of the discharge area is 1.667:1 to 1680:1.

In one embodiment, the multi-stage electric field dust removal method for a clean room system for semiconductor manufacturing provided by the present invention may further include a method for reducing electric field coupling in air dust removal, including the following steps:

Passing air through at least two ionization electric fields in series; the ionization electric fields are generated by the electric field anode and the electric field cathode;

The electric field anode or/and the electric field cathode are selected.

In an embodiment of the present invention, the size of the electric field anode or/and the electric field cathode is selected such that the number of electric field couplings is ≤3.

Specifically, the ratio of the dust collection area of the electric field anode to the discharge area of the electric field cathode is selected. Preferably, the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 1.667:1 to 1680:1.

More preferably, the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 6.67-56.67:1.

Preferably, the distance between the electric field anode and the electric field cathode is selected to be less than 150 mm.

Preferably, the distance between the electric field anode and the electric field cathode is selected to be 2.5-139.9 mm. More preferably, the distance between the electric field anode and the electric field cathode is selected to be 5.0-100 mm.

Preferably, the length of the electric field anode is selected to be 10-180 mm. More preferably, the length of the electric field anode is selected to be 60-180 mm.

Preferably, the length of the electric field cathode is selected to be 30-180 mm. More preferably, the length of the electric field cathode is selected to be 54-176 mm.

In an embodiment of the present invention, the electric field device further includes an auxiliary electric field unit for generating an auxiliary electric field that is not parallel to the ionization dust removal electric field.

In an embodiment of the present invention, the electric field device further includes an auxiliary electric field unit, the ionization dust removal electric field includes a flow channel, and the auxiliary electric field unit is used to generate an auxiliary electric field that is not perpendicular to the flow channel.

In an embodiment of the present invention, the auxiliary electric field unit includes a first electrode, and the first electrode of the auxiliary electric field unit is disposed at or near the entrance of the ionization dust removal electric field.

In an embodiment of the present invention, the first electrode is a cathode.

In an embodiment of the present invention, the first electrode of the auxiliary electric field unit is an extension of the electric field cathode.

In an embodiment of the present invention, the first electrode of the auxiliary electric field unit and the electric field anode have an included angle α, and 0°<α≤125°, or 45°≤α≤125°, or 60°≤α ≤100°, or α=90°.

In an embodiment of the present invention, the auxiliary electric field unit includes a second electrode, and the second electrode of the auxiliary electric field unit is arranged at or near the outlet of the ionization dust removal electric field.

In an embodiment of the present invention, the second electrode is an anode.

In an embodiment of the present invention, the second electrode of the auxiliary electric field unit is an extension of the electric field anode.

In an embodiment of the present invention, the second electrode of the auxiliary electric field unit and the electric field cathode have an included angle α, and 0°<α≤125°, or 45°≤α≤125°, or 60°≤α ≤100°, or α=90°.

In an embodiment of the present invention, the electrode of the auxiliary electric field and the electrode of the ionization dust removal electric field are arranged independently.

The ionizing electric field between the electric field anode and the electric field cathode is also called the first electric field. In an embodiment of the present invention, a second electric field that is not parallel to the first electric field is formed between the electric field anode and the electric field cathode. In another embodiment of the present invention, the flow channel of the second electric field and the ionization electric field are not perpendicular. The second electric field is also called an auxiliary electric field, and can be formed by one or two auxiliary electrodes. When the second electric field is formed by an auxiliary electrode, the auxiliary electrode can be placed at the entrance or exit of the ionizing electric field, and the auxiliary electrode can have a negative potential, Or positive potential. Wherein, when the auxiliary electrode is a cathode, it is arranged at or near the entrance of the ionization electric field; the auxiliary electrode and the electric field anode have an angle α, and 0°<α≤125°, or 45°≤α ≤125°, or 60°≤α≤100°, or α=90°. When the auxiliary electrode is an anode, it is arranged at or near the outlet of the ionization electric field; the auxiliary electrode and the electric field cathode have an angle α, and 0°<α≤125°, or 45°≤α≤125 °, or 60°≤α≤100°, or α=90°. When the second electric field is formed by two auxiliary electrodes, one of the auxiliary electrodes can have a negative potential, and the other auxiliary electrode can have a positive potential; one auxiliary electrode can be placed at the entrance of the ionization electric field, and the other auxiliary electrode can be placed at the entrance of the ionization electric field. Export. In addition, the auxiliary electrode may be a part of the electric field cathode or the electric field anode, that is, the auxiliary electrode may be an extension of the electric field cathode or the electric field anode, and the length of the electric field cathode and the electric field anode are different. The auxiliary electrode may also be a separate electrode, that is, the auxiliary electrode may not be a part of the electric field cathode or the electric field anode. In this case, the voltage of the second electric field is different from the voltage of the first electric field and can be controlled separately according to the working conditions. The auxiliary electrode includes the first electrode and/or the second electrode in the auxiliary electric field unit.

In an embodiment of the present invention, the multi-stage electric field dust removal method for a clean room system for semiconductor manufacturing provided by the present invention further includes: a method for providing an auxiliary electric field, including the following steps:

Pass air through a flow channel;

Wherein, the auxiliary electric field ionizes the air.

In an embodiment of the present invention, the auxiliary electric field is generated by the auxiliary electric field unit.

In an embodiment of the present invention, the electric field device includes a front electrode between the entrance of the electric field device and the ionizing electric field formed by the electric field anode and the electric field cathode. When the gas flows through the front electrode from the entrance of the electric field device, the particles in the gas will be charged.

In an embodiment of the present invention, the shape of the front electrode may be a surface, a mesh, a perforated plate, or a plate. In the present invention, the mesh shape is a shape including any porous structure. When the front electrode is in the shape of a plate, the front electrode may have a non-porous structure or a porous structure. When the front electrode has a hole structure, one or more air inlet through holes are provided on the front electrode. In an embodiment of the present invention, the shape of the air intake through hole may be polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus. In an embodiment of the present invention, the outline size of the air inlet through hole may be 0.1-3mm, 0.1-0.2mm, 0.2-0.5mm, 0.5-1mm, 1-1.2mm, 1.2-1.5mm, 1.5-2mm, 2- 2.5mm, 2.5-2.8mm, or 2.8-3mm. In the present invention, when the gas with particles passes through the through holes on the front electrode, the gas with particles passes through the front electrode, which increases the contact area between the gas with particles and the front electrode and increases the charging efficiency. In the present invention, the through hole on the front electrode is any hole that allows substances to flow through the front electrode.

In an embodiment of the present invention, the shape of the front electrode can be one or more of solid, liquid, gas molecular clusters, plasma, conductive mixed state substances, biological substances naturally mixed with conductive substances, or artificial processing of objects to form conductive substances. A combination of forms. When the front electrode is solid, solid metal, such as 304 steel, or other solid conductors, such as graphite, can be used. When the front electrode is a liquid, it may be an ion-containing conductive liquid.

At work, before the gas with particles enters the ionizing electric field formed by the electric field anode and the electric field cathode, and the gas with particles passes through the front electrode, the front electrode charges the particles in the gas. When the gas enters the ionizing electric field, the electric field anode exerts an attractive force on the charged particles, causing the charged particles to move toward the electric field anode until the charged particles adhere to the electric field anode.

In an embodiment of the present invention, the front electrode introduces electrons into the particles in the gas, and the electrons are transferred between the front electrode and the electric field anode to charge more particles. The particles in the gas conduct electrons between the front electrode and the electric field anode and form a current.

In an embodiment of the present invention, the front electrode charges the particulate matter in the gas by contacting the particulate matter in the gas. In an embodiment of the present invention, the front electrode transfers electrons to the particulate matter in the gas by contacting the particulate matter in the gas, and charges the particulate matter in the gas.

In an embodiment of the present invention, the front electrode is perpendicular to the electric field anode. In one embodiment of the present invention, the front electrode is parallel to the electric field anode. In an embodiment of the present invention, the front electrode adopts a metal wire mesh. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode is different from the voltage between the electric field cathode and the electric field anode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage. The initial corona voltage is the minimum value of the voltage between the electric field cathode and the electric field anode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode may be 0.1-2 kv/mm.

In an embodiment of the present invention, the electric field device includes a flow channel, and the front electrode is located in the flow channel. In an embodiment of the present invention, the ratio of the cross-sectional area of the front electrode to the cross-sectional area of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40% , Or 50%. The cross-sectional area of the front electrode refers to the sum of the area of the solid part of the front electrode along the cross-section. In an embodiment of the present invention, the front electrode has a negative potential.

The electric field dust removal system and method of the present invention will be further explained by specific embodiments below.

Example 1

Please refer to FIG. 1, which shows a schematic diagram of the structure of the first electric field device in the multi-stage electric field dust removal system of this embodiment. The electric field device includes an electric field device inlet 1011, a front electrode 1013, and an insulating mechanism 1015.

The front electrode 1013 is arranged at the entrance 1011 of the electric field device, the front electrode 1013 is a conductive mesh plate, and the conductive mesh plate is used to conduct electrons into the gas after being powered on. Metal dust, droplets, or aerosols, the anode dust part of the electric field device, that is, the electric field anode 10141 attracts the charged pollutants, so that the charged pollutants move to the electric field anode, until the part of the pollutants It is attached to the anode of the electric field and collects the contaminants.

The electric field device includes an electric field anode 10141 and an electric field cathode 10142 arranged in the electric field anode 10141. An asymmetric electrostatic field is formed between the electric field anode 10141 and the electric field cathode 10142, wherein the gas to be contained in particulate matter enters the exhaust port through the exhaust port. After the electric field device, as the electric field cathode 10142 discharges, the gas is ionized, so that the particles obtain a negative charge, move to the electric field anode 10141, and deposit on the electric field anode 10141.

Specifically, the inside of the electric field anode 10141 is composed of a honeycomb-shaped and hollow anode tube bundle group, and the shape of the port of the anode tube bundle is a hexagon.

The electric field cathode 10142 includes a plurality of electrode rods, which pierce each anode tube bundle in the anode tube bundle one by one, wherein the shape of the electrode rod is needle-like, polygonal, burr-like, and threaded rod. Shaped or columnar. The ratio of the dust collection area of the electric field anode 10141 to the discharge area of the electric field cathode 10142 is 1680:1, the distance between the electric field anode 10141 and the electric field cathode 10142 is 9.9 mm, the length of the electric field anode 10141 is 60 mm, and the length of the electric field cathode 10142 It is 54mm.

In this embodiment, the outlet end of the electric field cathode 10142 is lower than the outlet end of the electric field anode 10141, and the inlet end of the electric field cathode 10142 is flush with the inlet end of the electric field anode 10141. The exit end of the 10141 and the near exit end of the electric field cathode 10142 have an angle α, and α=90°, so that an accelerating electric field is formed inside the electric field device, and more materials to be processed can be collected.

The insulation mechanism 1015 includes an insulation part and a heat insulation part. The insulating part is made of ceramic material or glass material. The insulating part is an umbrella-shaped string of ceramic pillars or glass pillars, or a pillar-shaped string of ceramic pillars or glass pillars, and the inside and outside of the umbrella or the pillars are covered with glaze.

As shown in FIG. 1, in an embodiment of the present invention, the electric field cathode 10142 is mounted on the cathode support plate 10143, and the cathode support plate 10143 and the electric field anode 10141 are connected through an insulating mechanism 1015. The insulation mechanism 1015 is used to achieve insulation between the cathode support plate 10143 and the electric field anode 10141. In an embodiment of the present invention, the electric field anode 10141 includes a first anode portion 101412 and a second anode portion 101411, that is, the first anode portion 101412 is close to the entrance of the electric field device, and the second anode portion 101411 is close to the outlet of the electric field device. The cathode support plate and the insulation mechanism are between the first anode part 101412 and the second anode part 101411, that is, the insulation mechanism 1015 is installed in the middle of the ionization electric field or the middle of the electric field cathode 10142, which can support the electric field cathode 10142 well, and The electric field cathode 10142 is fixed relative to the electric field anode 10141, so that the electric field cathode 10142 and the electric field anode 10141 maintain a set distance.

Example 2

The electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. For the structure diagram of the electric field generating unit of this embodiment, refer to FIG. 2. The electric field generating unit of this embodiment Refer to FIG. 3 for the AA view of the electric field generating unit. Refer to FIG. 4 for the AA view of the electric field generating unit with the length and angle of the electric field generating unit in this embodiment.

As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source. The anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power supply, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

As shown in FIGS. 2, 3 and 4, in this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 6.67:1, the distance L3 between the electric field anode 4051 and the electric field cathode 4052 is 9.9 mm, and the electric field anode 4051 The length L1 is 60mm, the length L2 of the electric field cathode 4052 is 54mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 extends along the direction of the fluid channel of the dust collecting electrode, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 and the near outlet end of the electric field cathode 4052 have an angle α, and α=118°, and under the action of the electric field anode 4051 and the electric field cathode 4052, more substances to be processed can be collected, and the number of electric field couplings ≤3, which can reduce the influence of electric field on aerosol, water mist and oil mist in the air. , The coupling consumption of loose and smooth particles can save 30-50% of electric energy in the electric field.

In this embodiment, the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units. In the same electric field level, each electric field anode has the same polarity, and each electric field cathode has the same polarity.

The electric field stages of the plurality of electric field stages are connected in series, and the series electric field stages are connected by a connecting shell. The distance between the electric field stages of two adjacent stages is greater than 1.4 times of the pole spacing. For a schematic diagram of the structure of the electric field device with two electric field levels in this embodiment, refer to FIG. 5. As shown in FIG. 5, the electric field levels are two levels, namely the first electric field 4053 and the second electric field 4054. The first electric field 4053 and the second electric field 4054 The secondary electric field 4054 is connected in series through the connecting housing 4055.

In this embodiment, the above-mentioned material to be processed may be particulate dust in the air.

Example 3

The electric field generating unit in this embodiment can be applied to the first-level electric field device in the multi-level electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source, the power source being a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1680:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 139.9 mm, and the electric field anode 4051 length The electric field cathode 4052 has a length of 180 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected, and the number of electric field couplings ≤3, which can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles in the air by the electric field, and save electric field power 20- 40%.

Example 4

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.667:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.4 mm, and the electric field anode 4051 length The electric field cathode 4052 has a length of 30 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected, and the number of electric field couplings is less than 3, which can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles by the electric field, and save the electric energy of the electric field by 10-30% .

Example 5

As shown in Figure 2, Figure 3 and Figure 4, the electric field anode 4051 in this embodiment is a hollow regular hexagonal tube, the electric field cathode 4052 is rod-shaped, and the electric field cathode 4052 penetrates the electric field anode 4051. The dust collection of the electric field anode 4051 The ratio of the area to the discharge area of the electric field cathode 4052 is 6.67:1, the distance L3 between the electric field anode 4051 and the electric field cathode 4052 is 9.9 mm, the electric field anode 4051 length L1 is 60 mm, and the electric field cathode 4052 length L2 is 54 mm. The electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 extends in the direction of the fluid channel of the dust collector. The inlet end is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 and the near outlet end of the electric field cathode 4052 have an angle α, and α=118°, and then the electric field anode 4051 and the electric field cathode 4052 Under the action, more materials to be processed can be collected to ensure higher dust collection efficiency of the electric field generating unit. The typical tail gas particle pm0.23 dust collection efficiency is above 99.99%, and the typical 23nm particle removal efficiency is above 99.99%.

The electric field stages of the plurality of electric field stages are connected in series, and the series electric field stages are connected by a connecting shell. The distance between the electric field stages of two adjacent stages is greater than 1.4 times of the pole spacing. As shown in FIG. 5, the electric field has two levels, namely, the first electric field 4053 and the second electric field 4054. The first electric field 4053 and the second electric field 4054 are connected in series through the connecting housing 4055.

Example 6

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051. The ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 is 1680. :1. The distance between the electric field anode 4051 and the electric field cathode 4052 is 139.9 mm, the electric field anode 4051 has a length of 180 mm, and the electric field cathode 4052 has a length of 180 mm. The electric field anode 4051 includes a fluid channel, and the fluid channel includes an inlet end and At the outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 extends along the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the electric field anode 4052 The outlet end of the 4051 is flush with the near outlet end of the electric field cathode 4052, and under the action of the electric field anode 4051 and the electric field cathode 4052, more materials to be processed can be collected, which ensures higher dust collection efficiency of the electric field device. The dust collection efficiency of typical tail gas particles pm0.23 is over 99.99%, and the removal efficiency of typical 23nm particles is over 99.99%.

Example 7

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051. The ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 is 1.667 :1. The distance between the electric field anode 4051 and the electric field cathode 4052 is 2.4 mm. The electric field anode 4051 has a length of 30 mm and the electric field cathode 4052 has a length of 30 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The cathode 4052 extends in the direction of the fluid channel of the dust collector. The inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052. Under the action of 4051 and electric field cathode 4052, more materials to be processed can be collected, ensuring higher dust collection efficiency of the electric field device. The dust collection efficiency of typical tail gas particles pm0.23 is above 99.99%, and the typical removal efficiency of 23nm particles is It is 99.99% or more.

In this embodiment, the electric field anode 4051 and the electric field cathode 4052 constitute a dust collection unit, and there are multiple dust collection units, so that the use of multiple dust collection units effectively improves the dust collection efficiency of the electric field device.

Example 8

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 27.566:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.3 mm, and the electric field anode 4051 length The electric field cathode 4052 has a length of 4 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected to realize the number of electric field couplings ≤ 3, which ensures that the dust removal efficiency of the electric field generating unit is higher.

Example 9

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.108:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.3 mm, and the electric field anode: 051 has a length of 60mm, the electric field cathode 4052 has a length of 200mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 Extending in the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052. Under the action of the electric field cathode 4052, more substances to be processed can be collected, and the number of electric field couplings ≤ 3 is realized, which ensures that the dust removal efficiency of the electric field generating unit is higher.

Example 10

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 3065:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 249 mm, and the electric field anode 4051 length is 2000mm, the electric field cathode 4052 has a length of 180mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 collects dust along the The direction of the polar fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode 4052 Under the action of, more materials to be processed can be collected, and the number of electric field couplings is less than or equal to 3, which ensures that the dust removal efficiency of the electric field generating unit is higher.

Example 11

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.338:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 5 mm, and the electric field anode 4051 length is The electric field cathode 4052 has a length of 10 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The direction of the polar fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode 4052 Under the action of, more materials to be processed can be collected, and the number of electric field couplings is less than or equal to 3, which ensures that the dust removal efficiency of the electric field generating unit is higher.

Example 12

The electric field device in this embodiment can be applied to the one-stage electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. Refer to FIG. 6 for the schematic diagram of the electric field device in this embodiment. As shown in FIG. 6, the electric field device includes an electric field cathode 5081 and an electric field anode 5082 respectively electrically connected to the cathode and anode of the DC power supply, and the auxiliary electrode 5083 is electrically connected to the anode of the DC power supply. In this embodiment, the electric field cathode 5081 has a negative potential, and the electric field anode 5082 and the auxiliary electrode 5083 both have a positive potential.

Meanwhile, as shown in FIG. 6, the auxiliary electrode 5083 and the electric field anode 5082 are fixedly connected in this embodiment. After the electric field anode 5082 is electrically connected to the anode of the DC power supply, the auxiliary electrode 5083 is also electrically connected to the anode of the DC power supply, and the auxiliary electrode 5083 and the electric field anode 5082 have the same positive potential.

As shown in FIG. 6, the auxiliary electrode 5083 in this embodiment can extend in the front-to-back direction, that is, the length direction of the auxiliary electrode 5083 can be the same as the length direction of the electric field anode 5082.

As shown in FIG. 6, in this embodiment, the electric field anode 5082 is tubular, the electric field cathode 5081 is rod-shaped, and the electric field cathode 5081 penetrates the electric field anode 5082. At the same time, the auxiliary electrode 5083 in this embodiment is also tubular, and the auxiliary electrode 5083 and the electric field anode 5082 constitute an anode tube 5084. The front end of the anode tube 5084 is flush with the electric field cathode 5081, and the rear end of the anode tube 5084 exceeds the rear end of the electric field cathode 5081 backward. Compared with the electric field cathode 5081, the part of the anode tube 5084 that extends backward is the auxiliary electrode 5083. That is, in this embodiment, the electric field anode 5082 and the electric field cathode 5081 have the same length, and the electric field anode 5082 and the electric field cathode 5081 are opposite in the front and rear direction; the auxiliary electrode 5083 is located behind the electric field anode 5082 and the electric field cathode 5081. In this way, an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field cathode 5081, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081. When the gas containing the substance to be treated flows into the anode tube 5084 from front to back, the negatively charged oxygen ions will combine with the substance to be treated in the process of moving to the electric field anode 5082 and backward, because the oxygen ions have a backward moving speed When the oxygen ions are combined with the substance to be treated, there will be no strong collision between the two, thereby avoiding large energy consumption due to the strong collision, making the oxygen ions easy to combine with the substance to be treated, and making The charging efficiency of the substances to be treated in the gas is higher, and furthermore, under the action of the electric field anode 5082 and the anode tube 5084, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.

In addition, as shown in FIG. 6, there is an angle α between the rear end of the anode tube 5084 and the rear end of the electric field cathode 5081 in this embodiment, and 0°<α≤125°, or 45°≤α≤125°, Or 60°≤α≤100°, or α=90°.

In this embodiment, the electric field anode 5082, the auxiliary electrode 5083, and the electric field cathode 5081 constitute a dust removal unit, and there are multiple dust removal units to effectively improve the dust removal efficiency of the electric field device by using multiple dust removal units.

In this embodiment, the above-mentioned substance to be processed may be granular dust.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field cathode 5081 and the electric field anode 5082, and the discharge electric field is an electrostatic field. Without the auxiliary electrode 5083, the ions flow in the electric field between the electric field cathode 5081 and the electric field anode 5082 along the direction perpendicular to the electrodes, and flow back and forth between the two electrodes, causing the ions to be folded back and forth between the electrodes for consumption. For this reason, in this embodiment, the auxiliary electrode 5083 is used to stagger the relative positions of the electrodes to form a relative imbalance between the electric field anode 5082 and the electric field cathode 5081. This imbalance will deflect the ion current in the electric field. In this electric field device, an auxiliary electrode 5083 is used to form an electric field capable of directional ion flow. The collection rate of the electric field device for particles entering the electric field in the direction of ion flow is nearly double that of particles entering the electric field in the direction of counter ion flow, thereby improving the efficiency of electric field dust accumulation and reducing electric field power consumption. In addition, the main reason for the low dust removal efficiency of the dust collecting electric field in the prior art is that the direction of the dust entering the electric field is opposite or perpendicular to the direction of the ion flow in the electric field, which causes the dust and the ion flow to collide violently with each other and produce large energy consumption. It also affects the charging efficiency, thereby reducing the electric field dust collection efficiency in the prior art and increasing the energy consumption.

Example 13

The electric field device in this embodiment can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention, including the electric field cathode and the electric field anode which are electrically connected to the cathode and anode of the DC power supply, and the auxiliary electrode It is electrically connected with the cathode of the DC power supply. In this embodiment, the auxiliary electrode and the electric field cathode both have a negative electric potential, and the electric field anode has a positive electric potential.

In this embodiment, the auxiliary electrode can be fixedly connected to the electric field cathode. In this way, after the electric field cathode is electrically connected to the cathode of the DC power source, the auxiliary electrode is also electrically connected to the cathode of the DC power source. At the same time, the auxiliary electrode in this embodiment extends in the front-rear direction.

In this embodiment, the electric field anode is tubular, the electric field cathode is rod-shaped, and the electric field cathode penetrates the electric field anode. At the same time, the above-mentioned auxiliary electrode in this embodiment is also rod-shaped, and the auxiliary electrode and the electric field cathode constitute a cathode rod. The front end of the cathode rod extends forward from the front end of the electric field anode, and the part of the cathode rod that exceeds the electric field anode forward is the auxiliary electrode. That is, in this embodiment, the electric field anode and the electric field cathode have the same length, and the electric field anode and the electric field cathode are positioned opposite each other in the front and rear direction; the auxiliary electrode is located in front of the electric field anode and the electric field cathode. In this way, an auxiliary electric field is formed between the auxiliary electrode and the electric field anode, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode and the electric field cathode, so that the negatively charged oxygen ions between the electric field anode and the electric field cathode The flow has a backward movement speed. When the gas containing the substance to be treated flows into the tubular electric field anode from front to back, the negatively charged oxygen ions will be combined with the substance to be treated during the process of moving to the electric field anode and backward, because oxygen ions have a backward moving speed When the oxygen ions are combined with the substance to be treated, there will be no strong collision between the two, thereby avoiding large energy consumption due to the strong collision, making the oxygen ions easy to combine with the substance to be treated, and making The charging efficiency of the substances to be treated in the gas is higher, and more substances to be treated can be collected under the action of the anode of the electric field, which ensures that the dust removal efficiency of the electric field device is higher.

In this embodiment, the electric field anode, the auxiliary electrode, and the electric field cathode constitute a dust removal unit, and there are multiple dust removal units to effectively improve the dust removal efficiency of the electric field device by using multiple dust removal units.

Example 14

The electric field device in this embodiment can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. Refer to FIG. 7 for the schematic diagram of the electric field device in this embodiment. As shown in FIG. 7, the electric field device includes an auxiliary electrode 5083, and the auxiliary electrode 5083 extends in the left-right direction. The length direction of the auxiliary electrode 5083 in this embodiment is different from the length direction of the electric field anode 5082 and the electric field cathode 5081. In addition, the auxiliary electrode 5083 may be perpendicular to the electric field anode 5082.

In this embodiment, the electric field cathode 5081 and the electric field anode 5082 are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the anode of the DC power supply. In this embodiment, the electric field cathode 5081 has a negative potential, and the electric field anode 5082 and the auxiliary electrode 5083 both have a positive potential.

As shown in FIG. 7, in this embodiment, the electric field cathode 5081 and the electric field anode 5082 are opposed to each other in the front and rear direction, and the auxiliary electrode 5083 is located behind the electric field anode 5082 and the electric field cathode 5081. In this way, an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field cathode 5081. The auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081, so that the electric field anode 5082 and the electric field cathode 5081 are The stream of negatively charged oxygen ions has a backward moving speed. When the gas containing the substance to be treated flows into the electric field between the electric field anode 5082 and the electric field cathode 5081 from front to back, the negatively charged oxygen ions will be combined with the substance to be treated in the process of moving to the electric field anode 5082 and backward. Oxygen ions have a backward moving speed. When the oxygen ions are combined with the material to be treated, there will be no strong collision between the two, thus avoiding the large energy consumption caused by the strong collision, making the oxygen ions easy to interact with The combination of the substances to be treated makes the charging efficiency of the substances to be treated in the gas higher. Then, under the action of the electric field anode 5082, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.

Example 15

The electric field device in this embodiment can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. Refer to FIG. 8 for a schematic diagram of the electric field device in this embodiment. As shown in Fig. 8, the electric field device includes an auxiliary electrode 5083, and the auxiliary electrode 5083 extends in the left-right direction. The length direction of the auxiliary electrode 5083 in this embodiment is different from the length direction of the electric field anode 5082 and the electric field cathode 5081. In addition, the auxiliary electrode 5083 may be perpendicular to the electric field cathode 5081.

In this embodiment, the electric field cathode 5081 and the electric field anode 5082 are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the cathode of the DC power supply. In this embodiment, the electric field cathode 5081 and the auxiliary electrode 5083 both have a negative electric potential, and the electric field anode 5082 has a positive electric potential.

As shown in FIG. 8, in this embodiment, the electric field cathode 5081 and the electric field anode 5082 are opposite to each other in the front and rear direction, and the auxiliary electrode 5083 is located in front of the electric field anode 5082 and the electric field cathode 5081. In this way, an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field anode 5082. The auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081, so that the electric field anode 5082 and the electric field cathode 5081 are The stream of negatively charged oxygen ions has a backward moving speed. When the gas containing the substance to be treated flows into the electric field between the electric field anode 5082 and the electric field cathode 5081 from front to back, the negatively charged oxygen ions will be combined with the substance to be treated in the process of moving to the electric field anode 5082 and backward. Oxygen ions have a backward moving speed. When the oxygen ions are combined with the material to be treated, there will be no strong collision between the two, thus avoiding the large energy consumption caused by the strong collision, making the oxygen ions easy to interact with The combination of the substances to be treated makes the charging efficiency of the substances to be treated in the gas higher. Then, under the action of the electric field anode 5082, more substances to be treated can be collected, ensuring higher dust removal efficiency of the electric field device.

Example 16

As shown in FIG. 9, this embodiment provides an electric field device, which can be applied to the first-level electric field device in the multi-stage electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. The structure diagram of the electric field device in this embodiment is shown in the figure 9. As shown in Figure 9, the electric field device includes an electric field device inlet 3085, a flow channel 3086, an electric field flow channel 3087, and an electric field device outlet 3088 that are connected in sequence. A front electrode 3083 is installed in the flow channel 3086. The ratio of the area to the cross-sectional area of the flow channel 3086 is 99%-10%. The electric field device also includes an electric field cathode 3081 and an electric field anode 3082. The electric field flow channel 3087 is located between the electric field cathode 3081 and the electric field anode 3082. The working principle of the electric field device of the present invention is that the pollutant-containing gas enters the flow channel 3086 through the entrance 3085 of the electric field device, the front electrode 3083 installed in the flow channel 3086 conducts electrons to some pollutants, and some pollutants are charged. After the substance enters the electric field flow channel 3087 from the flow channel 3086, the electric field anode 3082 exerts an attractive force on the charged pollutants, and the charged pollutants move to the electric field anode 3082 until the part of the pollutants adhere to the electric field anode 3082. At the same time, the electric field An ionizing electric field is formed between the electric field cathode 3081 and the electric field anode 3082 in the flow channel 3087. The ionizing electric field will charge another part of the uncharged pollutants, so that another part of the pollutants will also be attracted by the electric field anode 3082 after being charged. Finally, it is attached to the electric field anode 3082, so that the above-mentioned electric field device is used to make the pollutants more efficient and fully charged, thereby ensuring that the electric field anode 3082 can collect more pollutants and ensuring the pollutant collection efficiency of the electric field device of the present invention higher.

The cross-sectional area of the front electrode 3083 refers to the sum of the area of the front electrode 3083 along the solid part of the cross-section. In addition, the ratio of the cross-sectional area of the front electrode 3083 to the cross-sectional area of the flow channel 3086 may be 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.

As shown in FIG. 9, in this embodiment, the front electrode 3083 and the electric field cathode 3081 are electrically connected to the cathode of the DC power supply, and the electric field anode 3082 is electrically connected to the anode of the DC power supply. In this embodiment, the front electrode 3083 and the electric field cathode 3081 both have a negative electric potential, and the electric field anode 3082 has a positive electric potential.

As shown in FIG. 9, the front electrode 3083 in this embodiment may have a mesh shape, that is, a plurality of through holes are provided. In this way, when the gas flows through the flow channel 3086, the structural feature of the front electrode 3083 with through holes is used to facilitate the gas and pollutants to flow through the front electrode 3083, and make the pollutants in the gas contact the front electrode 3083 more fully. As a result, the front electrode 3083 can conduct electrons to more pollutants, and the pollutants have a higher charging efficiency.

As shown in FIG. 9, in this embodiment, the electric field anode 3082 is tubular, the electric field cathode 3081 is rod-shaped, and the electric field cathode 3081 penetrates the electric field anode 3082. In this embodiment, the electric field anode 3082 and the electric field cathode 3081 have an asymmetric structure. When the gas flows into the electric field cathode 3081 and the electric field anode 3082, the ionizing electric field formed between the electric field anode 3082 will charge the pollutants, and under the attractive force exerted by the electric field anode 3082, the charged pollutants are collected on the inner wall of the electric field anode 3082.

In addition, as shown in FIG. 9, in this embodiment, both the electric field anode 3082 and the electric field cathode 3081 extend in the front-rear direction, and the front end of the electric field anode 3082 is located in front of the front end of the electric field cathode 3081 in the front-rear direction. And as shown in FIG. 9, the rear end of the electric field anode 3082 is located behind the rear end of the electric field cathode 3081 in the front-rear direction. In this embodiment, the length of the electric field anode 3082 in the forward and backward directions is longer, so that the adsorption surface area on the inner wall of the electric field anode 3082 is larger, so that the attraction to pollutants with negative potential is greater and more can be collected. Pollutants.

As shown in FIG. 9, in this embodiment, the electric field cathode 3081 and the electric field anode 3082 constitute an ionization unit. There are multiple ionization units to collect more pollutants by using multiple ionization units, and make the electric field device collect pollutants. The ability is stronger and the collection efficiency is higher.

In this embodiment, the electric field cathode 3081 is also called a corona charged electrode. The aforementioned DC power supply is specifically a DC high-voltage power supply. A DC high voltage is connected between the front electrode 3083 and the electric field anode 3082 to form a conductive loop; a DC high voltage is connected between the electric field cathode 3081 and the electric field anode 3082 to form an ionization discharge corona electric field. In this embodiment, the front electrode 3083 is a densely distributed conductor. When the easily charged dust passes through the front electrode 3083, the front electrode 3083 directly charges the electrons to the dust. The dust is then adsorbed by the electric field anode 3082 of the opposite electrode; at the same time, the uncharged dust is formed by the electric field cathode 3081 and the electric field anode 3082. The ionization zone, the ionized oxygen formed in the ionization zone will charge the electrons to the dust, so that the dust will continue to be charged and absorbed by the electric field anode 3082 of the opposite electrode.

The electric field device in this embodiment can form two or more power-on modes. For example, in the case of sufficient oxygen in the gas, the ionization discharge corona electric field formed between the electric field cathode 3081 and the electric field anode 3082, ionized oxygen can be used to charge the pollutants, and then the electric field anode 3082 can be used to collect the pollutants; When the oxygen content in the gas is too low, or in an oxygen-free state, or the pollutant is conductive dust mist, the front electrode 3083 is used to directly electrify the pollutant, so that the pollutant is fully charged and adsorbed by the electric field anode 3082.

Example 17

This embodiment provides a clean room system for semiconductor manufacturing, including a clean room and a multi-level electric field dust removal system. The gas inlet of the clean room is in communication with the dust removal system outlet of the multi-level electric field dust removal system. The system 102 includes at least two electric field devices in the foregoing embodiments 1-16, and all the electric field devices are connected in series. The air needs to first flow through all the electric field devices connected in series in the multi-stage electric field dust removal system, so that the multi-stage electric field dust removal system can effectively remove the dust waiting to be processed in the air. The removal efficiency of typical 23nm particles is above 99.99%. Ensure that the air is cleaner and meet the air purification requirements in the semiconductor manufacturing plant, and the dust-removed gas is input into the clean room.

Example 18

This embodiment provides a method for designing a semiconductor manufacturing clean room system, which includes the following steps:

Select the number of electric field devices in the multi-level electric field dust removal system n=2, that is, it includes two electric field devices connected in series, namely the first level electric field device and the second level electric field device; the first level electric field device and the second level electric field device Using different power supplies, the voltage of the first-level electric field device is 8.1kv, and the voltage of the second-level electric field device is 7.2kv, so that the multi-stage electric field dust removal system can meet the total dust removal efficiency greater than or equal to 99.99%, and the ozone output less than or equal to 30ppm Requirements.

This embodiment provides a clean room system 100 for semiconductor manufacturing, including a clean room 101 and a multi-level electric field dust removal system 102. The gas inlet of the clean room 101 is connected to the dust removal system outlet of the multi-level electric field dust removal system 102. The multi-stage electric field dust removal system 102 includes the electric field device 1021 (first-stage electric field device) in the above-mentioned embodiment 1 and the electric field device 1022 (second-stage electric field device) in the embodiment, and the two electric field devices are connected in series.

The multi-stage electric field dust removal method provided in this embodiment includes: the gas enters the multi-stage electric field dust removal system, first enters the first-stage electric field device for ionization and dust removal, and then the gas enters the second-stage electric field device for ionization and dust removal, and passes through the multi-stage electric field dust removal system The purified gas after purification treatment enters the clean room. Figure 10 is a schematic diagram of the structure of the clean room system in this embodiment.

In this embodiment, the number of solid particles (PN value) of different sizes in the gas is detected at the inlet, outlet, and outlet of the first-level electric field device, respectively, and the specific detection particle size is 23nm PN values of, 0.3μm, 0.5μm, 1.0μm, 3.0μm, 5.0μm, 10μm solid particles, the detection results are shown in Table 1. The data in Table 1 are the average of 6 samples. The PN value at the entrance of the first-level electric field device in Table 1 is the PN value of the original gas entering the multi-level electric field dust removal system.

In this embodiment, the concentration of ozone in the gas is detected at the inlet and outlet of the first-level electric field device, and the outlet of the second-level electric field device. The test results are shown in Table 2. The data in Table 2 are all sampled 6 times average value. The ozone concentration value at the entrance of the first-level electric field device in Table 2 is the ozone concentration value in the original gas entering the multi-level electric field dust removal system.

It can be seen from Table 1-2 that the semiconductor manufacturing clean room system designed in this embodiment and the multi-level electric field dust removal system and multi-level electric field dust removal method provided make the total dust removal efficiency of the multi-level electric field dust removal system greater than 99.99%, and the ozone output is less than 30 ppm. The gas entering the clean room meets the requirements of semiconductor manufacturing.

Table 1

Table 2

Example 19

This embodiment also provides a method for designing a multi-stage electric field dust removal system for a semiconductor manufacturing clean room system, which includes the following steps:

Select the number of electric field devices in the multi-level electric field dust removal system n=3, that is, it includes three electric field devices connected in series, namely the first level electric field device, the second level electric field device and the third level electric field device; the first level electric field device The power supply voltage of the second-level electric field device is 8.1KV, the power supply voltage of the second-level electric field device is 7.2KV, and the power supply voltage of the third-level electric field device is 6.3KV, so that the multi-stage electric field dust removal system can meet the total dust removal efficiency of greater than 99.99% and the ozone output less than 30ppm Requirements.

This embodiment provides a clean room system 100 for semiconductor manufacturing, including a clean room 101 and a multi-level electric field dust removal system 102. The gas inlet of the clean room 101 is connected to the dust removal system outlet of the multi-level electric field dust removal system 102. , The multi-stage electric field dust removal system 102 includes the electric field device 1021 (first-level electric field device) in the above-mentioned embodiment 1, the electric field device 1022 (the second-stage electric field device) in the first embodiment and the electric field device in the first embodiment 1023 (Level 3 electric field device), the three electric field devices are connected in series.

The multi-stage electric field dust removal method provided by this embodiment includes: the gas enters the multi-stage electric field dust removal system, sequentially enters the first-stage electric field device, the second-stage electric field device, and the third-stage electric field device for ionization and dust removal, and the multi-stage electric field dust removal system The purified gas after purification treatment enters the clean room. Figure 11 is a schematic diagram of the structure of the clean room system in this embodiment.

In this embodiment, at the inlet and outlet of the first-level electric field device, the outlet of the second-level electric field device, and the outlet of the third-level electric field device, the number of solid particles of different sizes in the gas (PN The specific detection particle size is 23nm, 0.3μm, 0.5μm, 1.0μm, 3.0μm, 5.0μm, 10μm solid particles PN value, the detection results are shown in Table 3, the data in Table 3 are the average of 6 samples. The PN value at the entrance of the first-level electric field device in Table 3 is the PN value of the original gas entering the multi-level electric field dust removal system.

In this embodiment, the concentration of ozone in the gas is detected at the inlet and outlet of the first-level electric field device, the outlet of the second-level electric field device, and the outlet of the third-level electric field device. The test results are shown in Table 4. The data in 4 are the average of 6 samples. The ozone concentration value at the entrance of the first-level electric field device in Table 4 is the ozone concentration value in the original gas entering the multi-level electric field dust removal system.

It can be seen from Table 3-4 that the semiconductor manufacturing clean room system designed in this embodiment and the multi-level electric field dust removal system and multi-level electric field dust removal method provided make the total dust removal efficiency of the multi-level electric field dust removal system greater than 99.99% and the ozone output less than 30 ppm. The gas entering the clean room meets the requirements of semiconductor manufacturing.

table 3

Table 4

Example 20

This embodiment provides a semiconductor manufacturing method, including the following steps:

A: Air enters the multi-level electric field dust removal system through the ionizing electric field generated by the electric field anode and the electric field cathode to remove particulate matter in the gas; the electric field dust removal system in this embodiment includes the multi-level electric field dust removal system of embodiment 18 or embodiment 19;

The purified gas after dedusting by the electric field enters the clean room to provide purified gas for semiconductor manufacturing in the clean room.

In the clean room, perform the following operations:

In S1, a thin film is formed on a substrate by a CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition) process.

S2, forming a channel on the film, the channel exposing the surface of the substrate.

The formation of the groove includes the following steps:

Coating photoresist on the surface of the film;

Exposing the photoresist through a mask;

S3, ion infiltration is performed on the substrate exposed by the trench to form a specific structure with electronic characteristics.

In this embodiment, the photoresist can be a positive glue or a reverse glue.

In this embodiment, in step S1, the material of the substrate may be silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide.

In this embodiment, in step S1, the main component of the thin film is one or any combination of silicon nitride, silicon oxide, silicon carbide, and polysilicon.

In this embodiment, in step S2, the etching may be dry etching or wet etching.

In this embodiment, in step S3, the ion infiltration is diffusion or ion implantation.

In this embodiment, in step S3, the electronic characteristic is a PN junction.

In summary, the present invention effectively overcomes various shortcomings in the prior art and has high industrial value.

The above-mentioned embodiments only exemplarily illustrate the principles and effects of the present invention, and are not used to limit the present invention. Anyone familiar with this technology can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

Claims

A method for designing a multi-stage electric field dust removal system for a semiconductor manufacturing clean room system includes the following steps:

Select the number n of electric field devices in the multi-level electric field dust removal system and the voltage of each electric field device power supply to make the total dust removal efficiency of the electric field dust removal system (100%-(100%-P 1 %)*(100%-P 2 %)*…… *(100%-P n %)) is greater than or equal to a predetermined value, and the ozone output is less than or equal to a predetermined value, where P 1 ％, P 2 ％...P n ％ are the first level, the first The dust removal efficiency of level 2...nth level electric field device, n is an integer greater than 1.
The method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room system according to claim 1, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system comprises: selecting a multi-level electric field dust removal system The voltage of each electric field device power supply is the same.
The method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room system according to claim 1, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system comprises: selecting a multi-level electric field dust removal system The voltage of each electric field device power supply is not exactly the same.
The method for designing a multi-level electric field dust removal system for a semiconductor manufacturing clean room system according to claim 1 or 3, wherein the selecting the voltage of each electric field device power supply in the multi-level electric field dust removal system comprises: selecting a multi-level electric field The voltage of the power supply of each electric field device in the dust removal system is completely different.