TWI739502B - Clean room system for semiconductor manufacturing and its electric field dust removal method - Google Patents

Abstract

A clean room system for semiconductor manufacturing and an electric field dust removal method thereof. The clean room system includes a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; The gas inlet of the clean room is in communication with the dust removal system outlet of the electric field dust removal system; the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionizing electric field. The invention can effectively remove particles in the semiconductor manufacturing industry.

Description

Clean room system for semiconductor manufacturing and its electric field dust removal method

The present invention relates to the field of air purification, in particular to a clean room system for semiconductor manufacturing and an electric field dust removal method thereof, as well as a semiconductor manufacturing system and semiconductor manufacturing method.

With the advancement of science and technology, the size of semiconductor devices is getting smaller and smaller, and the requirements for the environment of the semiconductor manufacturing workshop are getting higher and higher. The clean room is a commonly used manufacturing workshop environment in the semiconductor manufacturing process. The purpose is to prevent particles, humidity, temperature, etc. from polluting semiconductor materials, which in turn affects the yield and reliability of semiconductors. According to the cleanliness requirements of the production process on the production environment, each clean room has different air cleanliness levels, which are usually divided by the maximum concentration limit of a certain particle size in the clean room. Correspondingly, different air cleanliness levels have different requirements for the cleanliness of the airflow entering the clean room.

Generally speaking, the existing semiconductor manufacturing plant is a three-story building. The clean room is arranged on the middle level of the plant, that is, the second floor. The third floor of the plant is equipped with a purification system, including the installation between the third floor and the second floor. Filter cotton, the air enters from the third floor, the air entering the third floor is purified by the purification system, the purified gas is input into the clean room on the second floor, and the gas generated in the clean room is discharged into the first floor and the first floor of the plant Always maintain negative pressure to ensure that the second floor clean room always keeps air out to the first floor, and dust cannot be sucked in.

The existing semiconductor manufacturing plant occupies a large space and the construction cost is high; the filter cotton is spread about 1 meter later between the second and third floors of the plant, which needs to be replaced regularly, which leads to an increase in the use cost.

At present, an electric field device is also used to remove dust and purify the particles contained in the dust-containing gas. The basic principle is to use high-voltage discharge to generate plasma to charge the particles, and then adsorb the charged particles to the dust collecting electrode to achieve electric field dust removal. Although the existing electric field device can overcome the shortcomings of large space occupation, high construction cost, and large power consumption in the existing semiconductor manufacturing plant, the current semiconductor manufacturing has higher and higher requirements for dust removal, and the existing electric field device cannot meet the corresponding requirements. For example, the size of existing semiconductor manufacturing is generally below 100 nm, and only 2 particles/m ^{3 of} 50 nm dust particles are allowed. The existing electric field device cannot effectively remove particles of this level.

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a clean room system for semiconductor manufacturing and its electric field dust removal method, which is used to solve the problem of large power consumption, large volume and high cost of air purification technology in the field of semiconductor manufacturing. , Inability to remove at least one technical problem from the nano-scale particles in the air.

The invention also provides a semiconductor manufacturing system and a semiconductor manufacturing method.

Some embodiments of the present invention can achieve a removal efficiency of more than 99.99% for particles with a particle diameter of 23 nm under the working condition of a gas flow rate of 6 m/s, and the removal efficiency is high, which can meet the high requirements of the semiconductor manufacturing environment. In addition, because the present invention can achieve effective removal of particulate matter at a high flow rate, the required electric field device is small in size, low in cost, and can reduce operating electricity costs.

In order to achieve the above objectives and other related objectives, the present invention provides the following examples:

Example 1 provided by the present invention: a clean room system for semiconductor manufacturing, including a clean room, an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system inlet, a dust removal system outlet, and an electric field device; The gas inlet of the clean room is in communication with the outlet of the dust removal system of the electric field dust removal system.

The example 2 provided by the present invention includes the above example 1, wherein the electric field device includes an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionizing electric field.

The example 3 provided by the present invention includes the above example 2, wherein the electric field device further includes an electric field device inlet and an electric field device outlet; the electric field anode includes a first anode portion and a second anode portion, and the first anode portion is close to The entrance of the electric field device, the second anode part is close to the exit of the electric field device, and at least one cathode support plate is arranged between the first anode part and the second anode part.

The example 4 provided by the present invention includes the above example 3, wherein the electric field device further includes an insulation mechanism for achieving insulation between the cathode support plate and the electric field anode.

The example 5 provided by the present invention includes the above example 4, wherein an electric field flow channel is formed between the electric field anode and the electric field cathode, and the insulation mechanism is arranged outside the electric field flow channel.

The example 6 provided by the present invention includes the above examples 4 or 5, wherein the insulating mechanism includes an insulating part and a heat insulating part; the material of the insulating part is a ceramic material or a glass material.

The example 7 provided by the present invention includes the above example 6, wherein the insulating part is an umbrella-shaped string ceramic column, an umbrella-shaped string glass column, a columnar string ceramic column or a columnar glass column, with glaze on the inside and outside of the umbrella or the inside and outside of the column.

The example 8 provided by the present invention includes the above example 7, wherein the distance between the outer edge of the umbrella-shaped string ceramic column or the umbrella-shaped string glass column and the electric field anode is more than 1.4 times the electric field distance, and the umbrella-shaped string ceramic column or umbrella The sum of the pitch of the umbrella protrusions of the glass column is 1.4 times the insulation pitch of the umbrella-shaped ceramic column or the umbrella-shaped glass column. The total length of the umbrella edge of the umbrella-shaped ceramic column or the umbrella-shaped glass column is the umbrella string. The insulation distance of ceramic columns or umbrella string glass columns is more than 1.4 times.

Example 9 provided by the present invention: includes any one of the foregoing Examples 3 to 8, wherein the length of the first anode part is 1/10 to 1/4, 1/4 to 1/ of the length of the electric field anode. 3. 1/3 to 1/2, 1/2 to 2/3, 2/3 to 3/4, or 3/4 to 9/10.

The example 10 provided by the present invention includes any one of the above examples 3 to 9, wherein the length of the first anode part is long enough to remove part of dust and reduce accumulation in the insulating mechanism and the cathode The dust on the support plate reduces the electric breakdown caused by dust.

Example 11 provided by the present invention includes any one of the foregoing Examples 3 to 10, wherein the second anode part includes a dust accumulation section and a reserved dust accumulation section.

Example 12 provided by the present invention: includes any one of the foregoing Examples 2 to 11, wherein the electric field cathode includes at least one electrode rod.

The example 13 provided by the present invention includes the above example 12, wherein the diameter of the electrode rod is not greater than 3 mm.

The example 14 provided by the present invention includes the above examples 12 or 13, wherein the shape of the electrode rod is needle-like, polygonal, burr-like, threaded rod-like or columnar.

Example 15 provided by the present invention: includes any one of the foregoing Examples 2 to 14, wherein the electric field anode is composed of a hollow tube bundle.

The example 16: provided by the present invention includes the above example 15, wherein the hollow cross section of the electric field anode tube bundle is circular or polygonal.

The example 17 provided by the present invention includes the above example 16, wherein the polygon is a hexagon.

The example 18 provided by the present invention includes any one of the above examples 14 to 17, wherein the tube bundle of the electric field anode is in a honeycomb shape.

Example 19 provided by the present invention: includes any one of the foregoing Examples 2 to 18, wherein the electric field cathode penetrates the electric field anode.

Example 20 provided by the present invention includes any one of the foregoing Examples 2 to 19, wherein the electric field device further includes an auxiliary electric field unit for generating an auxiliary electric field that is not parallel to the ionization electric field.

The example 21 provided by the present invention includes any one of the above examples 2 to 19, wherein the electric field device further includes an auxiliary electric field unit, the ionization electric field includes a flow channel, and the auxiliary electric field unit is used to generate and Auxiliary electric field where the flow channel is not vertical.

The example 22 provided by the present invention includes the above examples 20 or 21, wherein the auxiliary electric field unit includes a first electrode, and the first electrode of the auxiliary electric field unit is arranged at or near the entrance of the ionization electric field.

Example 23 provided by the present invention includes Example 22 above, wherein the first electrode is a cathode.

The example 24 provided by the present invention includes the above example 22 or 23, wherein the first electrode of the auxiliary electric field unit is an extension of the electric field cathode.

The example 25 provided by the present invention includes the above example 24, wherein the first electrode of the auxiliary electric field unit and the electric field anode have an included angle α, and 0°<α≤125°, or 45°≤α≤125°, Or 60°≤α≤100°, or α=90°.

Example 26 provided by the present invention: includes any one of the foregoing Examples 20 to 25, wherein the auxiliary electric field unit includes a second electrode, and the second electrode of the auxiliary electric field unit is arranged at or near the outlet of the ionization electric field .

The example 27 provided by the present invention includes the above example 26, wherein the second electrode is an anode.

The example 28 provided by the present invention includes the above example 26 or 27, wherein the second electrode of the auxiliary electric field unit is an extension of the electric field anode.

The example 29 provided by the present invention includes the above example 28, wherein the second electrode of the auxiliary electric field unit and the electric field cathode have an angle α, and 0°<α≤125°, or 45°≤α≤125°, Or 60°≤α≤100°, or α=90°.

The example 30 provided by the present invention includes any one of the above examples 20 to 23, 26 and 27, wherein the electrode of the auxiliary electric field and the electrode of the ionization electric field are arranged independently.

Example 31 provided by the present invention includes any one of the foregoing Examples 2 to 30, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.

Example 32 provided by the present invention includes any one of the foregoing Examples 2 to 30, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 6.67:1 to 56.67:1.

Example 33 provided by the present invention includes any one of the foregoing Examples 2 to 32, wherein the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm; The ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.

Example 34 provided by the present invention: includes any one of the foregoing Examples 2 to 32, wherein the distance between the electric field anode and the electric field cathode is less than 150 mm.

Example 35 provided by the present invention: includes any one of the foregoing Examples 2 to 32, wherein the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm.

Example 36 provided by the present invention includes any one of the foregoing Examples 2 to 32, wherein the distance between the electric field anode and the electric field cathode is 5-100 mm.

Example 37 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the length of the electric field anode is 10-180 mm.

Example 38 provided by the present invention: includes any one of the foregoing Examples 2 to 36, wherein the length of the electric field anode is 60-180 mm.

Example 39 provided by the present invention includes any one of the foregoing Examples 2 to 38, wherein the length of the electric field cathode is 30-180 mm.

Example 40 provided by the present invention: includes any one of the foregoing Examples 2 to 38, wherein the length of the electric field cathode is 54-176 mm.

Example 41 provided by the present invention: includes any one of the foregoing Examples 20 to 40, wherein, when operating, the number of coupling times of the ionization electric field is ≤3.

Example 42 provided by the present invention: includes any one of the foregoing Examples 2 to 40, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode, and the difference between the electric field anode and the electric field cathode The distance between the electrodes, the length of the anode of the electric field, and the length of the cathode of the electric field are such that the coupling times of the ionization electric field are less than or equal to 3.

The example 43 provided by the present invention includes any one of the foregoing examples 2 to 42, wherein the value range of the ionization electric field voltage is 1kv-50kv.

The example 44 provided by the present invention includes any one of the foregoing examples 2 to 43, wherein the electric field device further includes a plurality of connecting housings, and the series electric field stages are connected through the connecting housings.

The example 45 provided by the present invention includes the above example 44, wherein the distance between adjacent electric field levels is more than 1.4 times the pole pitch.

Example 46 provided by the present invention includes any one of the foregoing Examples 2 to 45, wherein the electric field device further includes a front electrode, and the front electrode is connected between the entrance of the electric field device and the electric field anode and the The electric field between the ionizing electric field formed by the cathode.

The example 47 provided by the present invention includes the above example 46, wherein the front electrode is in the shape of a surface, a mesh, a hole plate, or a plate.

The example 48 provided by the present invention includes the above example 46 or 47, wherein at least one through hole is provided on the front electrode.

The example 49 provided by the present invention includes the above example 48, wherein the through hole is polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus.

The example 50 provided by the present invention includes the above example 48 or 49, wherein the aperture of the through hole is 0.1-3 mm.

Example 51 provided by the present invention: includes any one of the foregoing Examples 46 to 50, wherein the front electrode is a combination of one or more forms of solid, liquid, gas molecular cluster, or plasma.

The example 52 provided by the present invention includes any one of the foregoing examples 46 to 51, wherein the front electrode is a conductive mixed state material, a biological body naturally mixes a conductive material, or an object is artificially processed to form a conductive material.

Example 53 provided by the present invention: includes any one of the foregoing Examples 46 to 52, wherein the front electrode is 304 steel or graphite.

Example 54 provided by the present invention: includes any one of the foregoing Examples 46 to 52, wherein the front electrode is an ion-containing conductive liquid.

Example 55 provided by the present invention: includes any one of the foregoing Examples 46 to 54, wherein, during operation, before the gas enters the ionizing electric field formed by the electric field cathode and the electric field anode, and the gas passes through the front electrode , The front electrode charges the particles in the gas.

Example 56 provided by the present invention: includes the above example 55, wherein when the gas enters the ionization electric field, the electric field anode exerts an attractive force on the charged particles, causing the charged particles to move toward the electric field anode until the charged Particles are attached to the anode of the electric field.

Example 57 provided by the present invention: includes the above examples 55 or 56, wherein the front electrode introduces electrons into the particulate matter in the gas, and the electrons are transferred between the front electrode and the electric field anode, so that More particles in the gas are charged.

Example 58 provided by the present invention includes any one of the foregoing Examples 55 to 57, wherein the particles in the gas conduct electrons between the front electrode and the electric field anode and form a current.

Example 59 provided by the present invention: includes any one of the foregoing Examples 55 to 58, wherein the front electrode charges the particulate matter in the gas by contacting the particulate matter in the gas.

Example 60 provided by the present invention includes any one of the foregoing Examples 55 to 59, wherein at least one through hole is provided on the front electrode.

The example 61 provided by the present invention includes the above example 60, wherein the particles in the gas are charged when the gas passes through the through hole on the front electrode.

Example 62 provided by the present invention includes any one of the foregoing Examples 46 to 61, wherein the front electrode is perpendicular to the electric field anode.

Example 63 provided by the present invention: includes any one of the foregoing Examples 46 to 62, wherein the front electrode is parallel to the electric field anode.

Example 64 provided by the present invention: includes any one of the foregoing Examples 46 to 63, wherein the front electrode adopts a metal wire mesh.

Example 65 provided by the present invention: includes any one of the foregoing Examples 46 to 64, wherein the voltage between the front electrode and the electric field anode is different from the voltage between the electric field cathode and the electric field anode .

Example 66 provided by the present invention: includes any one of the foregoing Examples 46 to 65, wherein the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage.

Example 67 provided by the present invention: includes any one of the foregoing Examples 46 to 66, wherein the voltage between the front electrode and the electric field anode is 0.1-2 kv/mm.

Example 68 provided by the present invention: includes any one of the foregoing Examples 46 to 67, wherein the electric field device includes a flow channel, and the front electrode is located in the flow channel; the cross-sectional area of the front electrode and the flow The cross-sectional area ratio of the channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.

Example 69 provided by the present invention: includes any one of Examples 1 to 68, wherein the electric field dust removal system further includes an ozone removing device for removing or reducing ozone generated by the intake electric field device, and the ozone removing device Between the outlet of the air intake electric field device and the outlet of the air intake dust removal system.

The example 70 provided by the present invention includes the above example 69, wherein the ozone removing device further includes an ozone digester.

The example 71 provided by the present invention includes the above example 70, wherein the ozone digester is selected from at least one of an ultraviolet ozone digester and a catalytic ozone digester.

Example 72 provided by the present invention: a semiconductor manufacturing system, including the clean room system for semiconductor manufacturing according to any one of the foregoing Examples 1-71, and further including: The film preparation device is arranged in the clean room. The thin film etching device is arranged in the clean room. The ion doping device is arranged in the clean room.

Example 73 provided by the present invention: an electric field dust removal method for a clean room system for semiconductor manufacturing, including the following steps: passing gas through an ionizing electric field generated by an electric field anode and an electric field cathode to remove particulate matter in the gas.

The example 74 provided by the present invention includes Example 73, wherein the electric field dust removal method further includes a method of providing an auxiliary electric field, including the following steps: passing air through a flow channel; generating an auxiliary electric field in the flow channel, and the auxiliary electric field is not It is perpendicular to the flow channel.

Example 75 provided by the present invention includes Example 74, wherein the auxiliary electric field includes a first electrode, and the first electrode is arranged at or near the entrance of the ionization dust removal electric field.

The present invention provides Example 76: including Example 75, wherein the first electrode is a cathode.

Example 77 provided by the present invention: includes any one of Examples 75 or 76, wherein the first electrode is an extension of the electric field cathode.

Example 78 provided by the present invention includes Example 77, wherein the first electrode and the electric field anode have an included angle α, and 0°<α≤125°, or 45°≤α≤125°, or 60°≤α ≤100°, or α=90°.

Example 79 provided by the present invention includes any one of Examples 73 to 78, wherein the electric field includes a second electrode, and the second electrode is arranged at or near the outlet of the ionization dust removal electric field.

Example 80 provided by the present invention includes Example 79, wherein the second electrode is an anode.

The present invention provides Example 81: including Example 79 or 80, wherein the second electrode is an extension of the electric field anode.

Example 82 provided by the present invention includes Example 81, wherein the second electrode and the electric field cathode have an included angle α, and 0°<α≤125°, or 45°≤α≤125°, or 60°≤α ≤100°, or α=90°.

Example 83 provided by the present invention: includes any one of Examples 73 to 76, wherein the second electrode is arranged independently of the electric field anode and the first cathode.

The example 84 provided by the present invention includes examples 73, 79, or 80, wherein the second electrode is arranged independently of the electric field anode and the first cathode.

Example 85 provided by the present invention: the electric field dust removal method including any one of Examples 73 to 84, wherein the electric field dust removal method further includes a method for reducing the coupling of the dust removal electric field, including the following steps: selecting electric field anode parameters or/and electric field cathode Parameter to reduce the number of electric field coupling.

Example 86 provided by the present invention includes Example 85, which includes selecting the ratio of the dust collection area of the electric field anode to the discharge area of the electric field cathode.

Example 87 provided by the present invention includes Example 86, wherein the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 1.667:1 to 1680:1.

The example 88 provided by the present invention includes Example 86, in which the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 6.67:1-56.67:1.

Example 89 provided by the present invention includes any one of Examples 85 to 88, including selecting the electric field cathode to have a diameter of 1-3 mm, and the distance between the electric field anode and the electric field cathode to be 2.5-139.9 mm; The ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.

Example 90 provided by the present invention: includes any one of Examples 85 to 89, wherein the distance between the electric field anode and the electric field cathode is selected to be less than 150 mm.

Example 91 provided by the present invention: includes any one of Examples 85 to 89, wherein the distance between the electric field anode and the electric field cathode is selected to be 2.5-139.9 mm.

Example 92 provided by the present invention: includes any one of Examples 85 to 89, wherein the distance between the electric field anode and the electric field cathode is selected to be 5-100 mm.

Example 93 provided by the present invention: includes any one of Examples 85 to 92, which includes selecting the electric field anode length to be 10-180 mm.

Example 94 provided by the present invention: includes any one of Examples 85 to 92, including selecting the electric field anode length to be 60-180 mm.

Example 95 provided by the present invention: includes any one of Examples 85 to 94, which includes selecting the electric field cathode length to be 30-180 mm.

Example 96 provided by the present invention: includes any one of Examples 85 to 94, which includes selecting the electric field cathode length to be 54-176 mm.

Example 97 provided by the present invention: includes any one of Examples 85 to 96, wherein it includes selecting that the electric field cathode includes at least one electrode rod.

Example 98 provided by the present invention includes Example 97, which includes selecting the electrode rod to have a diameter not greater than 3 mm.

Example 99 provided by the present invention includes Example 97 or 98, which includes selecting the shape of the electrode rod to be needle-shaped, polygonal, burr-shaped, threaded rod-shaped, or columnar.

Example 100 provided by the present invention: includes any one of Examples 85 to 99, wherein it includes selecting that the electric field anode is composed of a hollow tube bundle.

The example 101 provided by the present invention includes the example 100, wherein the hollow section including the anode tube bundle is selected to be circular or polygonal.

The example 102 provided by the present invention includes example 101, which includes selecting the polygon as a hexagon.

Example 103 provided by the present invention: includes any one of Examples 100 to 102, wherein the tube bundle including the selection of the electric field anode is in a honeycomb shape.

Example 104 provided by the present invention: includes any one of Examples 85 to 103, wherein it includes selecting the electric field cathode to penetrate into the electric field anode.

Example 105 provided by the present invention: includes any one of Examples 85 to 104, wherein the size of the electric field anode or/and the electric field cathode is selected such that the number of electric field couplings is less than or equal to 3.

Example 106 provided by the present invention includes any one of Examples 85 to 105, wherein the electric field dust removal method further includes the following step: the air is ionized and dusted to remove or reduce the ozone generated by the ionized dust.

Example 107 provided by the present invention: includes Example 106, in which ozone generated by ionization and dust removal is subjected to ozone digestion.

Example 108 provided by the present invention includes Example 107, wherein the ozone digestion is selected from at least one of ultraviolet digestion and catalytic digestion.

Example 109 provided by the present invention: A semiconductor manufacturing method includes the following steps: In the clean room, a thin film is formed on the substrate; In the clean room, a channel is formed on the film, and the channel exposes the surface of the substrate; In the clean room, ion infiltration is performed on the substrate exposed by the trench to form a specific structure with electronic characteristics.

The present invention has the following beneficial effects:

The electric field dust removal system and method provided by the present invention can effectively remove nano particles in the air. In particular, certain embodiments can effectively remove particles below 50 nm, especially particles around 23 nm. Some embodiments remove 23 nm particles. The removal efficiency reaches more than 99.99%, which can meet the requirements of the semiconductor manufacturing plant for gas entering the clean room.

The existing semiconductor manufacturing plant is a three-story building. The screening program purification system of the clean room requires a separate building. The construction cost is about US$300/m ^2. Therefore, the existing purification system occupies a large space and the construction cost is also high. Some of the present invention The embodiment can reduce the volume and area by more than 10 times, save the construction cost, and make the present invention small in size and low in cost.

At the same time, the resistance of the ultra-efficient screening program in the prior art is often more than 1500 Pa, and each 1000 kW of resistance requires the motor to consume 1000 kW of electricity, so the energy consumption of the fan is high. The resistance of some embodiments of the present invention is only about 100 Pa. It can save about 15 times and consume less power.

Some embodiments of the present invention have a removal effect of more than 99.99% on 23nm particulate matter, meet the air purification requirements of the clean room in the semiconductor manufacturing plant, and can achieve air purification in the loop plant.

The following specific examples illustrate the implementation of the present invention. Those familiar with the technology can easily understand the other advantages and effects of the present invention from the content disclosed in this specification.

It should be noted that the structures, proportions, sizes, etc. shown in the accompanying drawings in this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not intended to limit the implementation of the present invention. Limited conditions, so it has no technical significance. Any structural modification, proportional relationship change or size adjustment should still fall under the present invention without affecting the effects and objectives that can be achieved by the present invention. The disclosed technical content must be within the scope of coverage. At the same time, the terms such as "upper", "lower", "left", "right", "middle" and "one" cited in this specification are only for ease of description, not to limit the text. The scope of implementation of the invention, the change or adjustment of its relative relationship, shall be regarded as the scope of implementation of the invention without substantial changes to the technical content.

As mentioned above, the electric field dust removal system and method provided by the present invention can effectively remove nano particles in the air. In particular, certain embodiments can effectively remove particles below 50 nm, especially particles around 23 nm. The removal efficiency is over 99.99%, which can meet the requirements of the semiconductor manufacturing plant for gas entering the clean room. In addition, compared with the prior art, some embodiments of the present invention can reduce the volume and area by more than 10 times, save construction costs, and make the present invention small in size and low in cost. The resistance of the ultra-efficient screening program in the prior art is often more than 1500 Pa, and every 1000 kW of resistance requires the motor to consume 1000 kW of electricity, so the energy consumption of the fan is high. The resistance of some embodiments of the present invention is only about 100 Pa, and the power consumption can be saved. About 15 times, low power consumption.

In an embodiment of the present invention, the present invention provides a clean room system for semiconductor manufacturing, including a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system inlet and a dust removal system outlet An electric field device; the gas inlet of the clean room is connected to the outlet of the dust removal system of the electric field dust removal system.

In an embodiment of the present invention, the dust removal system of the semiconductor manufacturing industry may include an inlet of the dust removal system, an outlet of the dust removal system, and an electric field device. And in an embodiment of the present invention, the electric field device may include an entrance of the electric field device, an exit of the electric field device, and a front electrode located between the entrance of the electric field device and the outlet of the electric field device. When the gas flows through the front electrode from the entrance of the electric field device, the gas The particles in the air will be charged.

In some embodiments of the present invention, a semiconductor manufacturing system is provided, including: the clean room system for semiconductor manufacturing according to the present invention, the clean room system including a clean room and an electric field dust removal system; and further including:

The thin film preparation device is set in a clean room and is used to form a thin film on a substrate. Any applicable related device in the prior art can be selected.

A thin film etching device, which is set in a clean room and used to etch the thin film to form a channel, and any applicable related device in the prior art can be selected.

The ion doping device is arranged in a clean room and is used to form a specific structure with electronic characteristics on the substrate exposed by the trench. Any applicable related device in the prior art can be selected.

Some embodiments of the present invention also provide a semiconductor manufacturing method, including the following steps:

S1: Use the electric field dust removal method to remove particulate matter in the gas; the purified gas after the electric field dust removal enters the clean room; S2, a thin film is formed on the substrate; S3, a channel is formed on the thin film, and the channel is exposed The surface of the substrate; S4, ion infiltrate the substrate exposed by the trench to form a specific structure with electronic characteristics.

In an embodiment of the present invention, in step S3, the formation of the trench includes the following steps:

Coating photoresist on the surface of the film; exposing the photoresist through a mask; developing the photoresist and cleaning and removing part of the photoresist, exposing part of the film surface; Etching is performed to expose part of the substrate surface to form a channel.

In an embodiment of the present invention, the photoresist is a positive resist or a reverse resist.

In an embodiment of the present invention, in step S2, the material of the substrate is silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide or indium phosphide, or any other suitable material.

In an embodiment of the present invention, in step S2, the thin film is formed by a CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition) process, or other conventional applicable methods. Film forming method.

In an embodiment of the present invention, in step S2, the main component of the thin film is silicon nitride, silicon oxide, silicon carbide, polysilicon, or any combination of the two, or any other applicable material.

In some embodiments of the present invention, in step S3, the method of forming the channel can be any suitable method, for example, coating photoresist on the surface of the film, and placing a mask with a mask pattern on the photoresist. Above, the mask template is irradiated with a light source, the photoresist is exposed through the mask template, and part of the photoresist is cleaned and removed, exposing part of the film surface. Wherein, the light source can be any suitable light source, such as ultraviolet, deep ultraviolet or extreme ultraviolet. The photoresist can be positive or negative. When the positive photoresist is selected, the part of the photoresist irradiated by the light source is easily washed off by the developer, and the part not irradiated by the light source is not easily washed off by the developer and remains on the film. On the contrary, when the negative resin is selected, the part of the photoresist irradiated by the light source is not easily washed off by the developer and remains on the film, while the part not irradiated by the light source is easily washed off by the developer. Regardless of whether the positive or negative resist is selected, a part of the photoresist will be washed away while another part of the photoresist remains on the film, so that the mask pattern on the mask is developed on the photoresist. According to the mask pattern developed on the photoresist, the part of the film exposed after the photoresist is washed away is etched away to form a channel and expose the bottommost substrate. Wherein, the etching method may be any suitable method, for example, dry etching or wet etching is used. When dry etching is selected, methods such as sputter etching can be used to etch the thin film, which has good selectivity. When wet etching is selected, a chemical etching solution such as hydrogen fluoride solution can be used to etch and dissolve the part of the film in contact with the chemical etching solution, which has the characteristics of fast etching rate, deep thickness and high sensitivity.

In an embodiment of the present invention, in step S4, the ion infiltration may be diffusion or ion implantation, or any other applicable method.

In an embodiment of the present invention, in step S4, the electronic characteristic is a PN junction.

In an embodiment of the present invention, in step S4, ions are allowed to penetrate into the substrate on the substrate exposed after etching to form a specific structure with electronic characteristics such as a PN junction.

In an embodiment of the present invention, the electric field device may include an electric field cathode and an electric field anode, and an ionizing electric field is formed between the electric field cathode and the electric field anode. When the gas enters the ionization electric field, the oxygen in the gas will be ionized and form a large number of charged oxygen ions. The oxygen ions combine with dust and other particles in the gas to charge the particles. The electric field anode exerts an adsorption force on the negatively charged particles, so that The particles are adsorbed on the anode of the electric field to remove the particles in the gas.

In an embodiment of the present invention, the electric field cathode includes a plurality of cathode wires. The diameter of the cathode wire can be 0.1mm-20mm, and the size parameter can be adjusted according to the application and dust accumulation requirements. In an embodiment of the present invention, the diameter of the cathode wire is not greater than 3 mm. In an embodiment of the present invention, the cathode wire uses a metal wire or alloy wire that is easy to discharge, which is temperature-resistant and can support its own weight, and is electrochemically stable. In an embodiment of the present invention, the material of the cathode wire is titanium. The specific shape of the cathode wire is adjusted according to the shape of the electric field anode. For example, if the dust accumulation surface of the electric field anode is flat, the cross section of the cathode wire is circular; if the dust accumulation surface of the electric field anode is an arc surface, the cathode wire needs to be designed as Polyhedral. The length of the cathode wire is adjusted according to the electric field anode.

In an embodiment of the present invention, the electric field cathode includes a plurality of cathode rods. In an embodiment of the present invention, the diameter of the cathode rod is not greater than 3 mm. In one embodiment of the present invention, the cathode rod uses a metal rod or alloy rod that is easy to discharge. The shape of the cathode rod can be needle-like, polygonal, burr-like, threaded rod-like or column-like. The shape of the cathode rod can be adjusted according to the shape of the electric field anode. For example, if the dust accumulation surface of the electric field anode is flat, the cross section of the cathode rod needs to be designed to be circular; if the dust accumulation surface of the electric field anode is an arc surface, the cathode The rod needs to be designed in a multi-faceted shape.

In an embodiment of the present invention, the electric field cathode is penetrated in the electric field anode.

In an embodiment of the present invention, the electric field anode includes one or more hollow anode tubes arranged in parallel. When there are multiple hollow anode tubes, all the hollow anode tubes constitute a honeycomb-shaped electric field anode. In an embodiment of the present invention, the cross section of the hollow anode tube may be circular or polygonal. If the cross section of the hollow anode tube is circular, a uniform electric field can be formed between the electric field anode and the electric field cathode, and the inner wall of the hollow anode tube is not easy to accumulate dust. If the hollow anode tube has a triangular cross-section, 3 dust accumulation surfaces and 3 remote dust holding angles can be formed on the inner wall of the hollow anode tube. The hollow anode tube with this structure has the highest dust holding rate. If the cross section of the hollow anode tube is quadrilateral, 4 dust accumulation surfaces and 4 dust holding angles can be obtained, but the assembly structure is unstable. If the cross-section of the hollow anode tube is hexagonal, 6 dust-holding surfaces and 6 dust-holding angles can be formed, and the dust-holding surface and the dust-holding rate reach a balance. If the cross section of the hollow anode tube is more polygonal, more dust accumulation edges can be obtained, but the dust holding rate is lost. In an embodiment of the present invention, the diameter of the tube inscribed circle of the hollow anode tube ranges from 5 mm to 400 mm.

In an embodiment of the present invention, the electric field cathode is installed on the cathode support plate, and the cathode support plate and the electric field anode are connected by an insulating mechanism. The insulation mechanism is used to achieve insulation between the cathode support plate and the electric field anode. In an embodiment of the present invention, the electric field anode includes a first anode part and a second anode part, that is, the first anode part is close to the inlet of the electric field device, and the second anode part is close to the outlet of the electric field device. The cathode support plate and the insulation mechanism are between the first anode part and the second anode part, that is, the insulation mechanism is installed in the middle of the ionization electric field or the middle of the electric field cathode, which can support the electric field cathode and play a good role in the electric field cathode. Relative to the fixing effect of the electric field anode, the electric field cathode and the electric field anode maintain a set distance. In the prior art, the support point of the cathode is at the end of the cathode, and it is difficult to maintain the distance between the cathode and the anode. In an embodiment of the present invention, the insulation mechanism is arranged outside the electric field flow channel, that is, outside the electric field flow channel, to prevent or reduce dust in the gas from accumulating on the insulation mechanism, causing the insulation mechanism to break down or conduct electricity.

In an embodiment of the present invention, the insulation mechanism adopts a high-voltage resistant ceramic insulator to insulate the electric field cathode and the electric field anode. The electric field anode is also called a kind of housing.

In an embodiment of the present invention, the first anode part is located in front of the cathode support plate and the insulating mechanism in the gas flow direction. The first anode part can remove water in the gas and prevent water from entering the insulating mechanism, causing short circuit and ignition of the insulating mechanism. . In addition, the first anode part can remove a considerable part of the dust in the gas. When the gas passes through the insulating mechanism, a considerable part of the dust has been eliminated, reducing the possibility of short-circuiting of the insulating mechanism caused by the dust. In an embodiment of the present invention, the insulating mechanism includes insulating ceramic pillars. The design of the first anode part is mainly to protect the insulating ceramic pillars from being contaminated by the particles in the gas. Once the insulating ceramic pillars are polluted by the gas, the electric field anode and the electric field cathode will be connected, which will invalidate the dust accumulation function of the electric field anode. The design of the anode part can effectively reduce the pollution of the insulating ceramic pillar and increase the use time of the product. When the gas flows through the electric field channel, the first anode part and the electric field cathode first contact the polluting gas, and then the insulating mechanism contacts the gas. This achieves the purpose of first removing dust and then passing through the insulating mechanism, reducing pollution to the insulating mechanism and extending The cleaning and maintenance cycle corresponds to the insulating support of the electrode after use. The length of the first anode part is long enough to remove part of the dust, reduce the dust accumulated on the insulation mechanism and the cathode support plate, and reduce the electric breakdown caused by the dust. In an embodiment of the present invention, the length of the first anode portion occupies 1/10 to 1/4, 1/4 to 1/3, 1/3 to 1/2, 1/2 to 2/3 of the total length of the electric field anode. 2/3 to 3/4, or 3/4 to 9/10.

In an embodiment of the present invention, the second anode part is located behind the cathode support plate and the insulating mechanism in the gas flow direction. The second anode part includes a dust accumulation section and a reserved dust accumulation section. Among them, the dust accumulation section uses static electricity to adsorb particulate matter in the gas. The dust accumulation section is to increase the dust accumulation area and prolong the use time of the electric field device. The reserved dust section can provide failure protection for the dust section. The dust accumulation section is reserved to further increase the dust accumulation area and improve the dust removal effect under the premise of meeting the design requirements for dust removal. The dust accumulation section is reserved to supplement the dust accumulation in the front section. In an embodiment of the present invention, the first anode part and the second anode part may use different power sources.

In an embodiment of the present invention, due to the extremely high potential difference between the electric field cathode and the electric field anode, in order to prevent the electric field cathode and the electric field anode from conducting, the insulating mechanism is arranged outside the electric field flow channel between the electric field cathode and the electric field anode. Therefore, the insulation mechanism is suspended outside the anode of the electric field. In an embodiment of the present invention, the insulating mechanism can be made of non-conducting temperature-resistant materials, such as ceramics, glass, and the like. In an embodiment of the present invention, the material insulation that is completely airtight and air-free requires an insulation isolation thickness of> 0.3 mm/kv; and air insulation requires> 1.4 mm/kv. The insulation distance can be set according to more than 1.4 times the distance between the electric field cathode and the electric field anode. In an embodiment of the present invention, ceramics are used for the insulation mechanism, and the surface is glazed; adhesives or organic materials cannot be used to fill the connection, and the temperature resistance is greater than 350 degrees Celsius.

In an embodiment of the present invention, the insulation mechanism includes an insulation part and a heat insulation part. In order to make the insulating mechanism have anti-fouling function, the material of the insulating part is ceramic material or glass material. In an embodiment of the present invention, the insulating part may be an umbrella-shaped string of ceramic pillars or glass pillars with glaze on the inside and outside of the umbrella. The distance between the outer edge of the umbrella string ceramic column or the glass column and the electric field anode is greater than or equal to 1.4 times the electric field distance, that is, greater than or equal to 1.4 times the electrode pitch. The sum of the pitches of the umbrella protrusions of the umbrella string ceramic columns or glass columns is greater than or equal to 1.4 times the insulation pitch of the umbrella string ceramic columns. The total inner depth of the umbrella side of the umbrella string ceramic column or the glass column is greater than or equal to 1.4 times the insulation distance of the umbrella string ceramic column. The insulating part can also be a columnar string of ceramic columns or glass columns with glaze on the inside and outside of the columns. In an embodiment of the present invention, the insulating part may also be in the shape of a tower.

In an embodiment of the present invention, a heating rod is arranged in the insulating part, and when the temperature around the insulating part approaches the dew point, the heating rod is activated and heated. Due to the temperature difference between the inside and outside of the insulating part during use, condensation is likely to occur on the inside, outside, and outside of the insulating part. The outer surface of the insulating part may generate high temperature spontaneously or heated by gas, and it needs necessary isolation protection to prevent burns. The heat insulation part includes a protective enclosure and a denitration purification reaction chamber located outside the insulation part. In an embodiment of the present invention, the end of the insulating part that needs condensation location also needs to be insulated to prevent the environment and heat dissipation and high temperature heating of the condensation component.

In an embodiment of the present invention, the lead wire of the power supply of the electric field device is connected through the wall using umbrella-shaped string ceramic columns or glass columns, using elastic contacts to connect the cathode support plate in the wall, and plugging and unplugging the sealed insulating protective wiring cap outside the wall. The insulation distance between the lead-through wall conductor and the wall is greater than the ceramic insulation distance of the umbrella string ceramic column or glass column. In an embodiment of the present invention, the high-voltage part removes the lead wire and is directly installed on the end to ensure safety. The overall external insulation of the high-voltage module is protected by ip68, and the medium is used for heat exchange and heat dissipation.

In an embodiment of the present invention, the electric field anode and the electric field cathode are respectively electrically connected to the two electrodes of the power supply. The voltage loaded on the electric field anode and the electric field cathode needs to select an appropriate voltage level. The specific voltage level selected depends on the volume, temperature resistance, and dust holding rate of the electric field device. For example, the voltage is from 1kv to 50kv; first consider the temperature resistance conditions in the design, the parameters of the pole distance and temperature: 1MM <30 degrees, the dust area is greater than 0.1 square / thousand cubic meters / hour, and the electric field length is greater than the inscribed circle of a single tube 5 times, the flow velocity of the control electric field is less than 9 m/s. In an embodiment of the present invention, the electric field anode is composed of a first hollow anode tube and has a honeycomb shape. The shape of the first hollow anode tube port can be circular or polygonal. In an embodiment of the present invention, the inscribed circle of the first hollow anode tube ranges from 5-400mm, and the corresponding voltage is between 0.1-120kv, and the corresponding current of the first hollow anode tube is between 0.1-30A; different The inscribed circle corresponds to different corona voltages, about 1KV/1MM.

In an embodiment of the present invention, the electric field device includes an electric field stage, the electric field stage includes a plurality of electric field generating units, and there may be one or more electric field generating units. The electric field generating unit is also called a dust collecting unit. The dust collecting unit includes the above-mentioned electric field anode and electric field cathode, and there are one or more dust collecting units. When there are multiple electric field levels, the dust collection efficiency of the electric field device can be effectively improved. In the same electric field level, each electric field anode has the same polarity, and each electric field cathode has the same polarity. And when there are multiple electric field levels, the electric field levels are connected in series. In an embodiment of the present invention, the electric field device further includes a plurality of connecting shells, and the series electric field stages are connected through the connecting shells; the distance between the electric field stages of two adjacent stages is more than 1.4 times of the pole pitch.

The inventor of the present invention has discovered through research that the disadvantages of poor removal efficiency and high energy consumption of existing electric field devices are caused by electric field coupling. The invention can significantly reduce the size (namely volume) of the electric field dust removal device by reducing the number of electric field couplings. For example, the size of the ionization dust removal device provided by the present invention is about one-fifth of the size of the existing ionization dust removal device. The reason is that in order to obtain an acceptable particle removal rate, the gas flow rate in the existing ionization dust removal device is set to about 1m/s, and the present invention can still obtain higher particles when the gas flow rate is increased to 6m/s. Removal rate. When processing a given flow of gas, as the gas velocity increases, the size of the electric field dust removal device can be reduced.

In addition, the present invention can significantly improve the particle removal efficiency. For example, when the gas flow rate is about 1m/s, the prior art electric field dust removal device can remove about 70% of the particulate matter in the engine exhaust, but the present invention can remove about 99% of the particulate matter, even when the gas flow rate is 6m/s.

Since the inventor discovered the effect of electric field coupling and found a way to reduce the number of times of electric field coupling, the present invention achieved the above unexpected results.

The scheme for reducing the number of electric field coupling provided by the present invention is as follows:

In an embodiment of the present invention, an asymmetric structure is adopted between the electric field cathode and the electric field anode. In a symmetric electric field, polar particles receive a force of the same magnitude but opposite directions, and the polar particles reciprocate in the electric field; in an asymmetric electric field, the polar particles receive two different forces, and the polar particles move in the direction of the greater force. Moving can avoid coupling.

In an embodiment of the present invention, a clean room system for semiconductor manufacturing is provided, including a clean room and an electric field dust removal system;

The clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; the gas inlet of the clean room is in communication with the dust removal system outlet of the electric field dust removal system;

The electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, and the electric field cathode and the electric field anode are used to generate an ionizing electric field;

The ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 1.667:1 to 1680:1.

In an embodiment of the present invention, the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is 6.67:1 to 56.67:1.

In an embodiment of the present invention, the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is such that the number of coupling times of the ionization dust removal electric field is less than or equal to 3.

In an embodiment of the present invention, the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode, the distance between the electric field anode and the electric field cathode, the length of the electric field anode, and the The length of the electric field cathode makes the coupling times of the ionization dust removal electric field≤3.

The electric field device of the present invention forms an ionizing electric field between the electric field cathode and the electric field anode. In order to reduce the electric field coupling of the ionizing electric field, in one embodiment of the present invention, the method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode so that the number of electric field couplings is less than or equal to 3. In an embodiment of the present invention, the ratio of the dust collecting area of the electric field anode to the discharge area of the electric field cathode may be: 1.667:1 to 1680:1; 3.334:1 to 13.34:1; 6.67:1 to 56.67:1; 13.34: 1-28.33:1. In this embodiment, the dust collecting area of the electric field anode with a relatively large area and the discharge area of the electric field cathode with a relatively small area are selected. The specific selection of the above area ratio can reduce the discharge area of the electric field cathode, reduce the suction force, and expand the dust collecting area of the electric field anode. Enlarging the suction, that is, the asymmetric electrode suction between the electric field cathode and the electric field anode, so that the charged dust falls on the dust collecting surface of the electric field anode, although the polarity is changed, it can no longer be sucked away by the electric field cathode, and the electric field coupling is reduced to realize the electric field coupling. Times≤3. That is, when the electric field distance is less than 150mm, the number of electric field coupling times ≤ 3, the electric field energy consumption is low, and the electric field can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles, and save the electric field power by 30-50%. The dust collection area refers to the area of the working surface of the electric field anode. For example, if the electric field anode is a hollow regular hexagon tube, the dust collection area is the inner surface area of the hollow regular hexagon tube, and the dust collection area is also called the dust accumulation area. The discharge area refers to the area of the working surface of the electric field cathode. For example, if the electric field cathode is rod-shaped, the discharge area is the rod-shaped outer surface area.

In an embodiment of the present invention, a clean room system for semiconductor manufacturing is provided, which includes a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; The gas inlet of the clean room is in communication with the outlet of the dust removal system of the electric field dust removal system; the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, the electric field cathode and the electric field anode are used to generate an ionizing electric field The length of the electric field anode is 10-180mm.

In an embodiment of the present invention, the length of the electric field anode is 60-180 mm.

In an embodiment of the present invention, the length of the anode of the electric field is such that the number of coupling times of the ionization and dust removal electric field is less than or equal to 3.

In an embodiment of the present invention, a clean room system for semiconductor manufacturing is provided, which includes a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; The gas inlet of the clean room is in communication with the outlet of the dust removal system of the electric field dust removal system; the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, the electric field cathode and the electric field anode are used to generate an ionizing electric field The length of the electric field cathode is 30-180mm.

In an embodiment of the present invention, the length of the electric field cathode is 54-176 mm.

In an embodiment of the present invention, the length of the anode of the electric field is such that the number of coupling times of the ionization and dust removal electric field is less than or equal to 3.

In an embodiment of the present invention, a clean room system for semiconductor manufacturing is provided, which includes a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; The gas inlet of the clean room is in communication with the outlet of the dust removal system of the electric field dust removal system; the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, the electric field cathode and the electric field anode are used to generate an ionizing electric field The distance between the electric field anode and the electric field cathode is less than 150mm.

In an embodiment of the present invention, the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm.

In an embodiment of the present invention, the distance between the electric field anode and the electric field cathode is 5-100 mm.

In an embodiment of the present invention, the distance between the electric field anode and the electric field cathode is such that the number of coupling times of the ionization dust removal electric field is less than or equal to 3.

In an embodiment of the present invention, the length of the electric field anode can be 10-180mm, 10-20mm, 20-30mm, 60-180mm, 30-40mm, 40-50mm, 50-60mm, 60-70mm, 70-80mm, 80mm. -90mm, 90-100mm, 100-110mm, 110-120mm, 120-130mm, 130-140mm, 140-150mm, 150-160mm, 160-170mm, 170-180mm, 60mm, 180mm, 10mm or 30mm. The length of the electric field anode refers to the minimum length from one end to the other end of the working surface of the electric field anode. Choosing this length of the electric field anode can effectively reduce the electric field coupling.

In an embodiment of the present invention, the length of the electric field cathode may be 30-180mm, 54-176mm, 30-40mm, 40-50mm, 50-54mm, 54-60mm, 60-70mm, 70-80mm, 80-90mm, 90mm. -100mm, 100-110mm, 110-120mm, 120-130mm, 130-140mm, 140-150mm, 150-160mm, 160-170mm, 170-176 mm, 170-180mm, 54mm, 180mm, or 30mm. The length of the electric field cathode refers to the minimum length from one end to the other end of the working surface of the electric field cathode. Choosing this length of the electric field cathode can effectively reduce the electric field coupling.

In an embodiment of the present invention, the distance between the electric field anode and the electric field cathode may be 5-30mm, 2.5-139.9mm, 9.9-139.9mm, 2.5-9.9mm, 9.9-20mm, 20-30mm, 30-40mm, 40mm. -50mm, 50-60mm, 60-70mm, 70-80mm, 80-90mm, 90-100mm, 100-110mm, 110-120mm, 120-130mm, 130-139.9mm, 9.9mm, 139.9mm, or 2.5mm. The distance between the anode of the electric field and the cathode of the electric field is also referred to as the electrode pitch. The pole distance specifically refers to the minimum vertical distance between the working surfaces of the electric field anode and the electric field cathode. This selection of the pole spacing can effectively reduce the electric field coupling and make the electric field device have high temperature resistance characteristics.

In an embodiment of the present invention, the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm; the dust accumulation area of the electric field anode and the electric field cathode The ratio of the discharge area is 1.667:1 to 1680:1.

In an embodiment, the present invention provides an electric field dust removal method for a clean room system used in semiconductor manufacturing, which may further include a method for reducing electric field coupling in air dust removal, including the following steps:

The ionizing electric field generated by passing air through the electric field anode and the electric field cathode; selecting the electric field anode or/and the electric field cathode.

In an embodiment of the present invention, the size of the electric field anode or/and the electric field cathode is selected such that the number of electric field couplings is ≤3.

Specifically, the ratio of the dust collection area of the electric field anode to the discharge area of the electric field cathode is selected. Preferably, the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 1.667:1 to 1680:1.

More preferably, the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode is selected to be 6.67-56.67:1.

In an embodiment of the present invention, the diameter of the electric field cathode is 1-3 mm, and the distance between the electric field anode and the electric field cathode is 2.5-139.9 mm; the dust accumulation area of the electric field anode and the electric field cathode The ratio of the discharge area is 1.667:1 to 1680:1.

Preferably, the distance between the electric field anode and the electric field cathode is selected to be less than 150 mm.

Preferably, the distance between the electric field anode and the electric field cathode is selected to be 2.5-139.9 mm. More preferably, the distance between the electric field anode and the electric field cathode is selected to be 5.0-100 mm.

Preferably, the length of the electric field anode is selected to be 10-180 mm. More preferably, the length of the electric field anode is selected to be 60-180 mm.

Preferably, the length of the electric field cathode is selected to be 30-180 mm. More preferably, the length of the electric field cathode is selected to be 54-176 mm.

In an embodiment of the present invention, the electric field device further includes an auxiliary electric field unit for generating an auxiliary electric field that is not parallel to the ionization dust removal electric field.

In an embodiment of the present invention, the electric field device further includes an auxiliary electric field unit, the ionization dust removal electric field includes a flow channel, and the auxiliary electric field unit is used to generate an auxiliary electric field that is not perpendicular to the flow channel.

In an embodiment of the present invention, the auxiliary electric field unit includes a first electrode, and the first electrode of the auxiliary electric field unit is arranged at or near the entrance of the ionization dust removal electric field.

In an embodiment of the present invention, the first electrode is a cathode.

In an embodiment of the present invention, the first electrode of the auxiliary electric field unit is an extension of the electric field cathode.

In an embodiment of the present invention, the first electrode of the auxiliary electric field unit and the electric field anode have an included angle α, and 0°<α≤125°, or 45°≤α≤125°, or 60°≤α≤ 100°, or α=90°.

In an embodiment of the present invention, the auxiliary electric field unit includes a second electrode, and the second electrode of the auxiliary electric field unit is disposed at or near the outlet of the ionization dust removal electric field.

In an embodiment of the present invention, the second electrode is an anode.

In an embodiment of the present invention, the second electrode of the auxiliary electric field unit is an extension of the electric field anode.

In an embodiment of the present invention, the second electrode of the auxiliary electric field unit and the electric field cathode have an included angle α, and 0°<α≤125°, or 45°≤α≤125°, or 60°≤α≤ 100°, or α=90°.

In an embodiment of the present invention, the electrode of the auxiliary electric field and the electrode of the ionization dust removal electric field are arranged independently.

The ionizing electric field between the electric field anode and the electric field cathode is also called the first electric field. In an embodiment of the present invention, a second electric field that is not parallel to the first electric field is formed between the electric field anode and the electric field cathode. In another embodiment of the present invention, the flow channel of the second electric field and the ionization electric field are not perpendicular. The second electric field is also called an auxiliary electric field, and can be formed by one or two auxiliary electrodes. When the second electric field is formed by an auxiliary electrode, the auxiliary electrode can be placed at the entrance or exit of the ionizing electric field. Or positive potential. Wherein, when the auxiliary electrode is a cathode, it is arranged at or near the entrance of the ionization electric field; the auxiliary electrode and the electric field anode have an angle α, and 0°<α≤125°, or 45°≤α≤ 125°, or 60°≤α≤100°, or α=90°. When the auxiliary electrode is an anode, it is arranged at or near the outlet of the ionization electric field; the auxiliary electrode and the electric field cathode have an angle α, and 0°<α≤125°, or 45°≤α≤125° , Or 60°≤α≤100°, or α=90°. When the second electric field is formed by two auxiliary electrodes, one of the auxiliary electrodes can have a negative potential, and the other auxiliary electrode can have a positive potential; one auxiliary electrode can be placed at the entrance of the ionization electric field, and the other auxiliary electrode can be placed at the entrance of the ionization electric field. Export. In addition, the auxiliary electrode may be a part of the electric field cathode or the electric field anode, that is, the auxiliary electrode may be formed by an extension of the electric field cathode or the electric field anode. In this case, the length of the electric field cathode and the electric field anode are different. The auxiliary electrode may also be a separate electrode, that is, the auxiliary electrode may not be a part of the electric field cathode or the electric field anode. In this case, the voltage of the second electric field is different from the voltage of the first electric field and can be individually controlled according to the working conditions. The auxiliary electrode includes the first electrode and/or the second electrode in the auxiliary electric field unit.

In one embodiment of the present invention, the present invention provides an electric field dust removal method for a clean room system used in semiconductor manufacturing, which includes the following steps: passing air through an ionizing electric field generated by an electric field anode and an electric field cathode.

In an embodiment of the present invention, the electric field dust removal method of the present invention further includes: a method of providing an auxiliary electric field, including the following steps: passing air through a flow channel; generating an auxiliary electric field in the flow channel, and the auxiliary electric field The flow channel is vertical, and the auxiliary electric field includes an inlet and an outlet.

Wherein, the auxiliary electric field ionizes the air in the flow channel.

In an embodiment of the present invention, the auxiliary electric field is generated by the auxiliary electric field unit.

In an embodiment of the present invention, the electric field device includes a front electrode between the entrance of the electric field device and the ionizing electric field formed by the electric field anode and the electric field cathode. When the gas flows through the front electrode from the entrance of the electric field device, the particles in the gas will be charged.

In an embodiment of the present invention, the shape of the front electrode may be a surface, a mesh, a perforated plate, a plate, a needle bar, a ball cage, a box, a tube, a natural material form, or a material processed form. In the present invention, the mesh shape is a shape including any porous structure. When the front electrode is in the shape of a plate, a ball cage, a box or a tube, the front electrode can be a non-porous structure or a porous structure. When the front electrode has a hole structure, one or more air inlet through holes are provided on the front electrode. In an embodiment of the present invention, the shape of the air inlet through hole may be polygonal, circular, oval, square, rectangular, trapezoidal, or rhombus. In an embodiment of the present invention, the outline size of the air inlet through hole may be 0.1-3mm, 0.1-0.2mm, 0.2-0.5mm, 0.5-1mm, 1-1.2mm, 1.2-1.5mm, 1.5-2mm, 2- 2.5mm, 2.5-2.8mm, or 2.8-3mm. In the present invention, when the gas with particles passes through the through holes on the front electrode, the gas with particles passes through the front electrode, which increases the contact area between the gas with particles and the front electrode and increases the charging efficiency. In the present invention, the through hole on the front electrode is any hole that allows substances to flow through the front electrode.

In an embodiment of the present invention, the shape of the front electrode may be one or more of solid, liquid, gas molecular clusters, plasma, conductive mixed state substances, biological substances naturally mixed with conductive substances, or artificial processing of objects to form conductive substances. The combination. When the front electrode is solid, solid metal, such as 304 steel, or other solid conductors, such as graphite, can be used. When the front electrode is a liquid, it may be an ion-containing conductive liquid.

During operation, before the gas with pollutants enters the ionizing electric field formed by the electric field anode and the electric field cathode, and the gas with particles passes through the front electrode, the front electrode charges the particles in the gas. When the gas with particles enters the ionization electric field, the electric field anode exerts an attractive force on the charged particles, causing the charged particles to move toward the electric field anode until the charged particles adhere to the electric field anode.

In an embodiment of the present invention, the front electrode introduces electrons into the particles in the gas, and the electrons are transferred between the front electrode and the electric field anode, so that more particles in the gas are charged. The charged particles conduct electrons between the front electrode and the electric field anode and form a current.

In an embodiment of the present invention, the front electrode charges the particles in the gas by contacting the particles in the gas. In an embodiment of the present invention, the front electrode transfers electrons to the particles in the gas by contacting the particles in the gas, and charges the particles in the gas.

In one embodiment of the present invention, the front electrode is perpendicular to the electric field anode. In one embodiment of the present invention, the front electrode is parallel to the electric field anode. In an embodiment of the present invention, a metal wire mesh is used for the front electrode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode is different from the voltage between the electric field cathode and the electric field anode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage. The initial corona voltage is the minimum value of the voltage between the electric field cathode and the electric field anode. In an embodiment of the present invention, the voltage between the front electrode and the electric field anode may be 0.1-2 kv/mm.

In an embodiment of the present invention, the electric field device includes a flow channel, and the front electrode is located in the flow channel. In an embodiment of the present invention, the ratio of the cross-sectional area of the front electrode to the cross-sectional area of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40% , Or 50%. The cross-sectional area of the front electrode refers to the sum of the area of the solid part of the front electrode along the cross-section. In one embodiment of the present invention, the front electrode has a negative potential.

In an embodiment of the present invention, the intake dust removal system further includes an ozone removal device for removing or reducing ozone generated by the intake electric field device, and the ozone removal device is located at the outlet of the intake electric field device and the intake dust removal device. Between system exits.

In an embodiment of the present invention, the ozone removing device includes an ozone digester.

In an embodiment of the present invention, the ozone digester is selected from at least one of an ultraviolet ozone digester and a catalytic ozone digester.

In an embodiment of the present invention, the electric field dust removal system further includes an ozone removal device for removing or reducing ozone generated by the electric field device. Because oxygen in the air participates in ionization, ozone is formed, which affects the performance of subsequent devices, such as ozone After entering the engine, the internal chemical composition of oxygen elements increases, the molecular weight increases, and the hydrocarbon compounds are transformed into non-hydrocarbon compounds. The appearance becomes darker, the precipitation increases, and the corrosiveness increases, which reduces the performance of the lubricant. Therefore, The electric field dust removal system also includes an ozone removal device to avoid or reduce the performance degradation of subsequent devices, such as avoiding or reducing the performance degradation of lubricating oil in the engine.

In an embodiment of the present invention, the ozone digester is used to digest ozone in the tail gas after being treated by the reaction field. The ozone digester can digest ozone by ultraviolet, catalysis and other methods.

The following specific embodiments are used to further illustrate the clean room system for semiconductor manufacturing and the electric field dust removal method of the present invention.

Example 1

Please refer to FIG. 1, which shows a schematic diagram of the structure of the electric field device in this embodiment. The electric field device includes an electric field device inlet 1011, a front electrode 1013, an insulating mechanism 1015, and an ozone mechanism 1018.

The front electrode 1013 is arranged at the entrance 1011 of the electric field device, the front electrode 1013 is a conductive mesh plate, and the conductive mesh plate is used to conduct electrons into the gas after being powered on. Metal dust, droplets, or aerosols, the anode dust part of the electric field device, that is, the electric field anode 10141 attracts the charged pollutants, so that the charged pollutants move to the electric field anode, until the part of the pollutants Attaches to the anode of the electric field to collect this part of the contaminants.

The electric field device includes an electric field anode 10141 and an electric field cathode 10142 arranged in the electric field anode 10141. An asymmetric electrostatic field is formed between the electric field anode 10141 and the electric field cathode 10142. The gas to be contained in particulate matter enters the exhaust port through the exhaust port. After the electric field device, as the electric field cathode 10142 discharges, the gas is ionized, so that the particles obtain a negative charge, move to the electric field anode 10141, and are deposited on the electric field anode 10141.

Specifically, the inside of the electric field anode 10141 is composed of a honeycomb-shaped and hollow anode tube bundle group, and the shape of the port of the anode tube bundle is a hexagon.

The electric field cathode 10142 includes a plurality of electrode rods, each of which penetrates each anode tube bundle in the anode tube bundle group one by one, wherein the shape of the electrode rod is needle-like, polygonal, burr-like, and threaded rod. Shaped or columnar. The ratio of the dust collection area of the electric field anode 10141 to the discharge area of the electric field cathode 10142 is 1680:1, the distance between the electric field anode 10141 and the electric field cathode 10142 is 9.9 mm, the length of the electric field anode 10141 is 60 mm, and the length of the electric field cathode 10142 It is 54mm.

In this embodiment, the outlet end of the electric field cathode 10142 is lower than the outlet end of the electric field anode 10141, and the inlet end of the electric field cathode 10142 is flush with the inlet end of the electric field anode 10141. There is an angle α between the exit end of 10141 and the near exit end of the electric field cathode 10142, and α=90°, so that an accelerating electric field is formed inside the electric field device, and more materials to be processed can be collected.

The insulation mechanism 1015 includes an insulation part and a heat insulation part. The material of the insulating part is a ceramic material or a glass material. The insulating part is an umbrella-shaped string of ceramic pillars or glass pillars, or a pillar-shaped string of ceramic pillars or glass pillars, and the inside and outside of the umbrella or the inside and outside of the pillars are covered with glaze.

As shown in FIG. 1, in an embodiment of the present invention, the electric field cathode 10142 is installed on the cathode support plate 10143, and the cathode support plate 10143 and the electric field anode 10141 are connected through an insulating mechanism 1015. The insulation mechanism 1015 is used to achieve insulation between the cathode support plate 10143 and the electric field anode 10141. In an embodiment of the present invention, the electric field anode 10141 includes a first anode portion 101412 and a second anode portion 101411, that is, the first anode portion 101412 is close to the entrance of the electric field device, and the second anode portion 101411 is close to the outlet of the electric field device. The cathode support plate and the insulation mechanism are between the first anode part 101412 and the second anode part 101411, that is, the insulation mechanism 1015 is installed in the middle of the ionization electric field or the middle of the electric field cathode 10142, which can play a good supporting role for the electric field cathode 10142, and The electric field cathode 10142 is fixed relative to the electric field anode 10141, so that the electric field cathode 10142 and the electric field anode 10141 maintain a set distance.

The ozone mechanism 1018 arranged at the air outlet end of the dust removal electric field system adopts an ozone-removing lamp tube.

Example 2

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. For the structure diagram of the electric field generating unit of this embodiment, refer to FIG. 2, and the AA view of the electric field generating unit of this embodiment is shown in FIG. 3. Refer to FIG. 4 for the AA view of the electric field generating unit with the length and angle of the electric field generating unit in this embodiment.

As shown in Figure 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field anode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power supply, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

As shown in FIGS. 2, 3 and 4, in this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method of reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 6.67:1, the distance L3 between the electric field anode 4051 and the electric field cathode 4052 is 9.9 mm, and the electric field anode 4051 The length L1 is 60 mm, the length L2 of the electric field cathode 4052 is 54 mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 extends along the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and there is an angle α between the outlet end of the electric field anode 4051 and the near outlet end of the electric field cathode 4052, and α =118°, and under the action of the electric field anode 4051 and the electric field cathode 4052, more substances to be processed can be collected, and the number of electric field couplings ≤3, which can reduce the influence of the electric field on aerosols, water mist, oil mist, and oil mist in the air. The coupling consumption of loose and smooth particles saves 30-50% of electric energy in the electric field.

In this embodiment, the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages so as to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units. In the same electric field level, each electric field anode has the same polarity, and each electric field cathode has the same polarity.

The electric field stages of the plurality of electric field stages are connected in series, and the series electric field stages are connected by a connecting shell, and the distance between the electric field stages of two adjacent stages is greater than 1.4 times of the pole pitch. Refer to FIG. 5 for a schematic diagram of the electric field device structure with two electric field levels in this embodiment. As shown in FIG. The secondary electric field 4054 is connected in series through the connecting housing 4055.

In this embodiment, the above-mentioned substance to be treated may be particulate matter in the air.

Example 3

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method of reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1680:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 139.9mm, and the electric field anode 4051 length The electric field cathode 4052 has a length of 180 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected, and the number of electric field couplings ≤3, which can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles in the air by the electric field, and save electric field power 20- 40%.

In this embodiment, the above-mentioned substance to be treated may be particulate matter in the air.

Example 4

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method of reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.667:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.4 mm, and the electric field anode 4051 length The electric field cathode 4052 has a length of 30 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected, and the number of electric field couplings is ≤3, which can reduce the coupling consumption of aerosol, water mist, oil mist, loose and smooth particles by the electric field, and save the electric energy of the electric field by 10-30%. .

In this embodiment, the above-mentioned substance to be treated may be particulate matter in the air.

Example 5

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

As shown in Figures 2, 3, and 4, the electric field anode 4051 in this embodiment is a hollow regular hexagonal tube, the electric field cathode 4052 is rod-shaped, the electric field cathode 4052 penetrates the electric field anode 4051, and the electric field anode 4051 is The ratio of the dust area to the discharge area of the electric field cathode 4052 is 6.67:1, the distance L3 between the electric field anode 4051 and the electric field cathode 4052 is 9.9 mm, the electric field anode 4051 length L1 is 60 mm, and the electric field cathode 4052 length L2 is 54 mm. The electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 extends in the direction of the fluid channel of the dust collector, and the electric field anode 4051 The inlet end of the electric field is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 and the near outlet end of the electric field cathode 4052 have an angle α, and α=118°, and then the electric field anode 4051 and the electric field cathode 4052 Under the action, more materials to be processed can be collected to ensure that the dust collection efficiency of the electric field generation unit is higher. The dust collection efficiency of typical tail gas particles pm0.23 is more than 99.99%, and the typical 23 nm particle removal efficiency is more than 99.99% .

In this embodiment, the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages so as to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units. In the same electric field level, each electric field anode has the same polarity, and each electric field cathode has the same polarity.

The electric field stages of the plurality of electric field stages are connected in series, and the series electric field stages are connected by a connecting shell, and the distance between the electric field stages of two adjacent stages is greater than 1.4 times of the pole pitch. As shown in FIG. 5, the electric field has two levels, namely, the first electric field 4053 and the second electric field 4054. The first electric field 4053 and the second electric field 4054 are connected in series through the connecting housing 4055.

In this embodiment, the above-mentioned substance to be treated may be particulate matter in the air.

Example 6

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051. The ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 is 1680:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 139.9 mm, the electric field anode 4051 has a length of 180 mm, and the electric field cathode 4052 has a length of 180 mm. The electric field anode 4051 includes a fluid channel, and the fluid channel includes an inlet end. With the outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 extends along the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the electric field The outlet end of the anode 4051 is flush with the near outlet end of the electric field cathode 4052, and under the action of the electric field anode 4051 and the electric field cathode 4052, more materials to be processed can be collected, and the dust collection efficiency of the electric field device is higher. , The dust collection efficiency of typical tail gas particles pm0.23 is above 99.99%, and the removal efficiency of typical 23 nm particles is above 99.99%.

In this embodiment, the electric field device includes an electric field stage composed of a plurality of the above-mentioned electric field generating units, and there are multiple electric field stages so as to effectively improve the dust collection efficiency of the electric field device by using a plurality of dust collecting units. In the same electric field level, each electric field anode has the same polarity, and each electric field cathode has the same polarity.

In this embodiment, the above-mentioned substance to be treated may be particulate matter in the air.

Example 7

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051. The ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 is 1.667:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.4 mm. The electric field anode 4051 has a length of 30 mm, and the electric field cathode 4052 has a length of 30 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The cathode 4052 extends in the direction of the fluid channel of the dust collector. The inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode Under the action of 4051 and electric field cathode 4052, more materials to be processed can be collected, ensuring higher dust collection efficiency of the electric field device. The typical tail gas particle pm0.23 dust collection efficiency is more than 99.99%, and the typical 23 nm particle removal The efficiency is over 99.99%.

In this embodiment, the electric field anode 4051 and the electric field cathode 4052 constitute a dust collection unit, and there are multiple dust collection units, so that the use of multiple dust collection units effectively improves the dust collection efficiency of the electric field device.

In this embodiment, the above-mentioned material to be processed may be particulate dust in the air.

Example 8

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method of reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 27.566:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.3 mm, and the electric field anode 4051 length The electric field cathode 4052 has a length of 4 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The direction of the dust electrode fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode Under the action of 4052, more materials to be processed can be collected to realize the number of electric field couplings ≤ 3, which ensures that the dust removal efficiency of the electric field generating unit is higher.

In this embodiment, the above-mentioned material to be processed may be particulate dust in the air.

Example 9

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.108:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 2.3 mm, and the electric field anode: 051 has a length of 60mm, the electric field cathode 4052 has a length of 200mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, the electric field cathode 4052 Extending in the direction of the fluid channel of the dust collector, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, and the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052. Under the action of the electric field cathode 4052, more materials to be processed can be collected, and the number of electric field couplings ≤ 3 is realized, which ensures that the dust removal efficiency of the electric field generating unit is higher.

In this embodiment, the above-mentioned material to be processed may be particulate dust in the air.

Example 10

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collecting area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 3065:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 249 mm, and the electric field anode 4051 length is 2000mm, the electric field cathode 4052 has a length of 180mm, the electric field anode 4051 includes a fluid channel, the fluid channel includes an inlet end and an outlet end, the electric field cathode 4052 is placed in the fluid channel, and the electric field cathode 4052 collects dust along the The direction of the polar fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode 4052 Under the action of, more materials to be processed can be collected, and the number of electric field couplings ≤ 3 can be realized, which ensures that the dust removal efficiency of the electric field generating unit is higher.

In this embodiment, the above-mentioned material to be processed may be particulate dust in the air.

Example 11

The electric field generating unit in this embodiment can be applied to the electric field device in the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. As shown in FIG. 2, it includes an electric field anode 4051 and an electric field cathode 4052 for generating an electric field. The electric field cathode 4051 and the electric field cathode 4052 are respectively electrically connected to two electrodes of a power source. The power source is a DC power source, and the electric field anode 4051 and the electric field cathode 4052 are electrically connected to the anode and the cathode of the DC power source, respectively. In this embodiment, the electric field anode 4051 has a positive electric potential, and the electric field cathode 4052 has a negative electric potential.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field anode 4051 and the electric field cathode 4052, and the discharge electric field is an electrostatic field.

In this embodiment, the electric field anode 4051 has a hollow regular hexagonal tube shape, the electric field cathode 4052 has a rod shape, and the electric field cathode 4052 penetrates the electric field anode 4051.

The method for reducing electric field coupling includes the following steps: selecting the ratio of the dust collection area of the electric field anode 4051 to the discharge area of the electric field cathode 4052 to be 1.338:1, the distance between the electric field anode 4051 and the electric field cathode 4052 is 5 mm, and the electric field anode 4051 length is The electric field cathode 4052 has a length of 10 mm. The electric field anode 4051 includes a fluid channel. The fluid channel includes an inlet end and an outlet end. The electric field cathode 4052 is placed in the fluid channel. The direction of the polar fluid channel extends, the inlet end of the electric field anode 4051 is flush with the near inlet end of the electric field cathode 4052, the outlet end of the electric field anode 4051 is flush with the near outlet end of the electric field cathode 4052, and then the electric field anode 4051 and the electric field cathode 4052 Under the action of, more materials to be processed can be collected, and the number of electric field couplings ≤ 3 can be realized, which ensures that the dust removal efficiency of the electric field generating unit is higher.

In this embodiment, the above-mentioned substance to be treated may be particulate matter in the air.

Example 12

The electric field device in this embodiment can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. Refer to FIG. 6 for the structure diagram of the electric field device. As shown in FIG. 6, the electric field device includes an electric field cathode 5081 and an electric field anode 5082 which are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the anode of the DC power supply. In this embodiment, the electric field cathode 5081 has a negative electric potential, and both the electric field anode 5082 and the auxiliary electrode 5083 have a positive electric potential.

At the same time, as shown in FIG. 6, the auxiliary electrode 5083 and the electric field anode 5082 are fixedly connected in this embodiment. After the electric field anode 5082 is electrically connected to the anode of the DC power supply, the auxiliary electrode 5083 is also electrically connected to the anode of the DC power supply, and the auxiliary electrode 5083 and the electric field anode 5082 have the same positive potential.

As shown in FIG. 6, the auxiliary electrode 5083 in this embodiment can extend in the front-to-back direction, that is, the length direction of the auxiliary electrode 5083 can be the same as the length direction of the electric field anode 5082.

As shown in FIG. 6, in this embodiment, the electric field anode 5082 is tubular, the electric field cathode 5081 is rod-shaped, and the electric field cathode 5081 penetrates the electric field anode 5082. At the same time, the above-mentioned auxiliary electrode 5083 in this embodiment is also tubular, and the auxiliary electrode 5083 and the electric field anode 5082 constitute an anode tube 5084. The front end of the anode tube 5084 is flush with the electric field cathode 5081, and the rear end of the anode tube 5084 extends backward beyond the rear end of the electric field cathode 5081. Compared with the electric field cathode 5081, the part of the anode tube 5084 that extends backward is the auxiliary electrode 5083. That is, in this embodiment, the electric field anode 5082 and the electric field cathode 5081 have the same length, and the electric field anode 5082 and the electric field cathode 5081 are opposite in the front and rear direction; the auxiliary electrode 5083 is located behind the electric field anode 5082 and the electric field cathode 5081. In this way, an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field cathode 5081, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081. When the gas containing the substance to be treated flows into the anode tube 5084 from front to back, the negatively charged oxygen ions will be combined with the substance to be treated in the process of moving to the electric field anode 5082 and backward. Because the oxygen ions have a backward moving speed, the oxygen ions When combined with the substance to be treated, there will be no strong collision between the two, thereby avoiding large energy consumption due to the strong collision, making it easy for oxygen ions to combine with the substance to be treated, and making the gas to be treated The charging efficiency of the treated material is higher, and under the action of the electric field anode 5082 and the anode tube 5084, more materials to be treated can be collected, and the dust removal efficiency of the electric field device is higher.

In addition, as shown in FIG. 6, there is an angle α between the rear end of the anode tube 5084 and the rear end of the electric field cathode 5081 in this embodiment, and 0°<α≤125°, or 45°≤α≤125°, or 60°≤α≤100°, or α=90°.

In this embodiment, the electric field anode 5082, the auxiliary electrode 5083, and the electric field cathode 5081 constitute a dust removal unit, and there are multiple dust removal units to effectively improve the dust removal efficiency of the electric field device by using multiple dust removal units.

In this embodiment, the above-mentioned substance to be processed may be granular dust.

The DC power supply in this embodiment may specifically be a DC high-voltage power supply. A discharge electric field is formed between the electric field cathode 5081 and the electric field anode 5082, and the discharge electric field is an electrostatic field. Without the auxiliary electrode 5083, the ions flow in the electric field between the electric field cathode 5081 and the electric field anode 5082 along the direction perpendicular to the electrode, and flow back and forth between the two electrodes, causing the ions to be folded back and forth between the electrodes for consumption. For this reason, in this embodiment, the auxiliary electrode 5083 is used to stagger the relative positions of the electrodes to form a relative imbalance between the electric field anode 5082 and the electric field cathode 5081. This imbalance will deflect the ion current in the electric field. In this electric field device, an auxiliary electrode 5083 is used to form an electric field capable of directing ion flow. The collection rate of the electric field device for particles entering the electric field in the direction of ion flow is nearly doubled than that of particles entering the electric field in the direction of counter ion flow, thereby improving the efficiency of electric field dust accumulation and reducing electric field power consumption. In addition, the main reason for the low dust removal efficiency of the dust collecting electric field in the prior art is that the direction of the dust entering the electric field is opposite or perpendicular to the direction of the ion flow in the electric field, which causes the dust and the ion flow to collide violently with each other and produce large energy consumption. This affects the charging efficiency, thereby reducing the electric field dust collection efficiency in the prior art and increasing the energy consumption.

When the electric field device in this embodiment is used to collect dust in the gas, the gas and dust enter the electric field along the direction of the ion flow, the dust is fully charged, and the electric field consumption is small; the dust collection efficiency of the unipolar electric field can reach more than 99.99%. When gas and dust enter the electric field against the direction of ion flow, the dust is not fully charged, and the electric power consumption of the electric field will increase, and the dust collection efficiency will be 40%-75%. In addition, the ion flow formed by the electric field device in this embodiment is beneficial to the unpowered fan fluid transportation, oxygenation, heat exchange, and so on.

Example 13

The electric field device in this embodiment can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. The electric field cathode and the electric field anode are respectively electrically connected to the cathode and anode of the DC power supply, and the auxiliary electrode is electrically connected to the cathode of the DC power supply. In this embodiment, the auxiliary electrode and the electric field cathode both have a negative electric potential, and the electric field anode has a positive electric potential.

In this embodiment, the auxiliary electrode can be fixedly connected to the electric field cathode. In this way, after the electric field cathode is electrically connected to the cathode of the DC power source, the auxiliary electrode is also electrically connected to the cathode of the DC power source. At the same time, the auxiliary electrode in this embodiment extends in the front-to-rear direction.

In this embodiment, the electric field anode is tubular, the electric field cathode is rod-shaped, and the electric field cathode penetrates the electric field anode. At the same time, the above-mentioned auxiliary electrode in this embodiment is also rod-shaped, and the auxiliary electrode and the electric field cathode constitute a cathode rod. The front end of the cathode rod forwards beyond the front end of the electric field anode, and the part of the cathode rod that forwards beyond the electric field anode is the above-mentioned auxiliary electrode. That is, in this embodiment, the length of the electric field anode and the electric field cathode are the same, and the electric field anode and the electric field cathode are positioned opposite each other in the front-to-rear direction; the auxiliary electrode is located in front of the electric field anode and the electric field cathode. In this way, an auxiliary electric field is formed between the auxiliary electrode and the electric field anode, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode and the electric field cathode, so that the negatively charged oxygen ion flow between the electric field anode and the electric field cathode Has a backward movement speed. When the gas containing the substance to be treated flows into the tubular electric field anode from front to back, the negatively charged oxygen ions will combine with the substance to be treated in the process of moving to the electric field anode and backward. Because oxygen ions have a backward moving speed, oxygen ions When combined with the substance to be treated, there will be no strong collision between the two, thereby avoiding large energy consumption due to the strong collision, making it easy for oxygen ions to combine with the substance to be treated, and making the gas to be treated The charging efficiency of the processed material is higher, and more materials to be processed can be collected under the action of the electric field anode, which ensures that the dust removal efficiency of the electric field device is higher.

In this embodiment, the electric field anode, the auxiliary electrode, and the electric field cathode constitute a dust removal unit, and there are multiple dust removal units to effectively improve the dust removal efficiency of the electric field device by using multiple dust removal units.

In this embodiment, the above-mentioned substance to be processed may be granular dust.

Example 14

The electric field device in this embodiment can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. Refer to FIG. 7 for a structural schematic diagram of the electric field device in this embodiment. As shown in FIG. 7, the auxiliary electrode 5083 extends in the left-right direction. In this embodiment, the length direction of the auxiliary electrode 5083 is different from the length direction of the electric field anode 5082 and the electric field cathode 5081. In addition, the auxiliary electrode 5083 may be perpendicular to the electric field anode 5082.

In this embodiment, the electric field cathode 5081 and the electric field anode 5082 are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the anode of the DC power supply. In this embodiment, the electric field cathode 5081 has a negative electric potential, and both the electric field anode 5082 and the auxiliary electrode 5083 have a positive electric potential.

As shown in FIG. 7, in this embodiment, the electric field cathode 5081 and the electric field anode 5082 are opposed to each other in the front-to-rear direction, and the auxiliary electrode 5083 is located behind the electric field anode 5082 and the electric field cathode 5081. In this way, an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field cathode 5081, and the auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081. When the gas containing the substance to be treated flows into the electric field between the electric field anode 5082 and the electric field cathode 5081 from front to back, the negatively charged oxygen ions will combine with the substance to be treated in the process of moving to the electric field anode 5082 and backward. It has a backward moving speed. When the oxygen ions are combined with the material to be processed, there will be no strong collision between the two, thereby avoiding the large energy consumption caused by the strong collision, making the oxygen ions easy to interact with the material to be processed The combination makes the charging efficiency of the substances to be treated in the gas higher, and then under the action of the electric field anode 5082, more substances to be treated can be collected, and the dust removal efficiency of the electric field device is higher.

Example 15

The electric field device in this embodiment can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. For a structural diagram of the electric field device in this embodiment, refer to FIG. 8. As shown in FIG. 8, the auxiliary electrode 5083 extends in the left-right direction. In this embodiment, the length direction of the auxiliary electrode 5083 is different from the length direction of the electric field anode 5082 and the electric field cathode 5081. In addition, the auxiliary electrode 5083 may be perpendicular to the electric field cathode 5081.

In this embodiment, the electric field cathode 5081 and the electric field anode 5082 are electrically connected to the cathode and anode of the DC power supply, respectively, and the auxiliary electrode 5083 is electrically connected to the cathode of the DC power supply. In this embodiment, the electric field cathode 5081 and the auxiliary electrode 5083 both have a negative electric potential, and the electric field anode 5082 has a positive electric potential.

As shown in FIG. 8, in this embodiment, the electric field cathode 5081 and the electric field anode 5082 are opposite to each other in the front-to-rear direction, and the auxiliary electrode 5083 is located in front of the electric field anode 5082 and the electric field cathode 5081. In this way, an auxiliary electric field is formed between the auxiliary electrode 5083 and the electric field anode 5082. The auxiliary electric field applies a backward force to the negatively charged oxygen ion flow between the electric field anode 5082 and the electric field cathode 5081, so that the electric field anode 5082 and the electric field cathode 5081 are connected between the The stream of negatively charged oxygen ions has a backward moving speed. When the gas containing the substance to be treated flows into the electric field between the electric field anode 5082 and the electric field cathode 5081 from front to back, the negatively charged oxygen ions will combine with the substance to be treated in the process of moving to the electric field anode 5082 and backward. It has a backward moving speed. When the oxygen ions are combined with the material to be processed, there will be no strong collision between the two, thereby avoiding the large energy consumption caused by the strong collision, making the oxygen ions easy to interact with the material to be processed The combination makes the charging efficiency of the substances to be treated in the gas higher, and then under the action of the electric field anode 5082, more substances to be treated can be collected, and the dust removal efficiency of the electric field device is higher.

Example 16

This embodiment provides an electric field device that can be applied to the electric field dust removal system of the semiconductor manufacturing clean room system of the present invention. Refer to FIG. 9 for a schematic diagram of the structure of the electric field device in this embodiment. As shown in FIG. 9, the electric field device includes an electric field device inlet 3085, a flow channel 3086, an electric field flow channel 3087, and an electric field device outlet 3088 that are connected in sequence. A front electrode 3083 is installed in the flow channel 3086. The ratio of the area to the cross-sectional area of the flow channel 3086 is 99%-10%. The electric field device also includes an electric field cathode 3081 and an electric field anode 3082. The electric field flow channel 3087 is located between the electric field cathode 3081 and the electric field anode 3082. The working principle of the electric field device of the present invention is: the gas containing particles enters the flow channel 3086 through the entrance 3085 of the electric field device, the front electrode 3083 installed in the flow channel 3086 conducts electrons to some particles, and some particles are charged. After 3086 enters the electric field channel 3087, the electric field anode 3082 exerts an attractive force on the charged particles, and the charged particles move to the electric field anode 3082 until the part of the charged particles adhere to the electric field anode 3082, and at the same time, the electric field cathode in the electric field channel 3087 An ionizing electric field is formed between 3081 and the electric field anode 3082. The ionizing electric field will charge another part of the uncharged particles, so that another part of the particles will also be attracted by the electric field anode 3082 after being charged, and finally adhere to the electric field anode 3082. Therefore, the above-mentioned electric field device is used to make the particles more efficient and fully charged, thereby ensuring that the electric field anode 3082 can collect more particles, and ensuring that the electric field device of the present invention has a higher collection efficiency for particles in the gas.

The cross-sectional area of the front electrode 3083 refers to the sum of the area of the front electrode 3083 along the solid part of the cross-section. In addition, the ratio of the cross-sectional area of the front electrode 3083 to the cross-sectional area of the flow channel 3086 may be 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%.

As shown in FIG. 9, in this embodiment, the front electrode 3083 and the electric field cathode 3081 are both electrically connected to the cathode of the DC power supply, and the electric field anode 3082 is electrically connected to the anode of the DC power supply. In this embodiment, the front electrode 3083 and the electric field cathode 3081 both have a negative electric potential, and the electric field anode 3082 has a positive electric potential.

As shown in FIG. 9, the front electrode 3083 in this embodiment may have a mesh shape, that is, a plurality of through holes are provided. In this way, when the gas flows through the flow channel 3086, the structural feature of the front electrode 3083 with through holes is used to facilitate the flow of gas and particles through the front electrode 3083, and make the particles in the gas contact the front electrode 3083 more fully, thereby The front electrode 3083 can conduct electrons to more particles, and the charging efficiency of the particles is higher.

As shown in FIG. 9, in this embodiment, the electric field anode 3082 is tubular, the electric field cathode 3081 is rod-shaped, and the electric field cathode 3081 penetrates the electric field anode 3082. In this embodiment, the electric field anode 3082 and the electric field cathode 3081 have an asymmetric structure. When gas flows into the electric field cathode 3081 and the electric field anode 3082, the ionizing electric field formed between the electric field anode 3082 will charge the particles, and under the attraction force exerted by the electric field anode 3082, the charged particles will be collected on the inner wall of the electric field anode 3082.

In addition, as shown in FIG. 9, in this embodiment, both the electric field anode 3082 and the electric field cathode 3081 extend in the front-rear direction, and the front end of the electric field anode 3082 is located in front of the front end of the electric field cathode 3081 in the front-rear direction. And as shown in FIG. 9, the rear end of the electric field anode 3082 is located behind the rear end of the electric field cathode 3081 in the front-to-rear direction. In this embodiment, the length of the electric field anode 3082 in the front and rear direction is longer, so that the adsorption surface area on the inner wall of the electric field anode 3082 is larger, so that the attraction force for particles with negative potential is greater, and more can be collected. Of particulate matter.

As shown in Figure 9, in this embodiment, the electric field cathode 3081 and the electric field anode 3082 constitute an ionization unit. There are multiple ionization units to collect more particles by using multiple ionization units, and make the electric field device more capable of collecting particles. Strong, and the collection efficiency is higher.

In this embodiment, the above-mentioned electric field cathode 3081 is also referred to as a corona charged electrode. The above-mentioned DC power supply is specifically a DC high-voltage power supply. A DC high voltage is connected between the front electrode 3083 and the electric field anode 3082 to form a conductive loop; a DC high voltage is connected between the electric field cathode 3081 and the electric field anode 3082 to form an ionization discharge corona electric field. In this embodiment, the front electrode 3083 is a densely distributed conductor. When the easily charged dust and other particles pass through the front electrode 3083, the front electrode 3083 directly charges the particles with electrons, and the particles are then adsorbed by the electric field anode 3082 of the opposite electrode; at the same time, the uncharged particles pass through the electric field cathode 3081 and the electric field anode 3082. The formed ionization zone, the ionized oxygen formed in the ionization zone will charge the electrons to the particles, so that the particles continue to be charged and are adsorbed by the electric field anode 3082 of the opposite electrode.

In this embodiment, the electric field device can form two or more power-on modes. For example, in the case of sufficient oxygen in the gas, the ionization discharge corona electric field formed between the electric field cathode 3081 and the electric field anode 3082 can be used to charge the particles in the gas, and then the electric field anode 3082 can be used to collect the particles; When the oxygen content in the gas is too low, or in an oxygen-free state, or the particles are conductive dust mist, the front electrode 3083 is used to directly electrify the particles in the gas, so that the particles in the gas are fully charged and then adsorbed by the electric field anode 3082.

Example 17

Refer to FIG. 10 for a schematic structural diagram of the electric field dust removal system provided in this embodiment. As shown in Figure 10, the electric field dust removal system includes an electric field device and an ozone removal device 206. The electric field device includes a dust removal electric field anode 10141 and a dust removal electric field cathode 10142. The ozone removal device is used to remove or reduce the generation of the electric field device. The ozone removal device is between the outlet of the electric field device and the outlet of the dust removal system. The dust removal electric field anode 10141 and the dust removal electric field cathode 10142 are used to generate an ionization dust removal electric field. The ozone removing device includes an ozone digester for digesting ozone generated by the electric field device, the ozone digester is an ultraviolet ozone digester, and the direction of the arrow in the figure is the flow direction of the intake air.

An air dust removal method includes the following steps: the air is ionized to remove dust, and then the ozone generated by the air ionization and dust removal is subjected to ozone digestion, and the ozone digestion is ultraviolet digestion.

The ozone removing device is used to remove or reduce the ozone generated by the electric field device. Ozone is formed due to the ionization of oxygen in the air.

Example 18

This embodiment provides a clean room system 100 for semiconductor manufacturing, including a clean room 101, an electric field dust removal system 102; the clean room 101 includes a gas inlet; the electric field dust removal system 102 includes a dust removal system inlet, a dust removal system outlet, and an electric field Device 1021; the gas inlet of the clean room is connected to the outlet of the dust removal system of the electric field dust removal system. Figure 11 is a schematic diagram of the structure of the clean room system in this embodiment.

The electric field dust removal system includes any one of the electric field devices in the foregoing embodiments 1-17. The air must first flow through the electric field device to effectively remove the dust waiting to be processed from the air by the electric field device. The typical 23 nm particle removal efficiency is over 99.99% to ensure that the air is cleaner and the gas entering the clean room Meet the requirements of the semiconductor manufacturing environment.

Embodiment 19 Ionization dust removal system and method

In this embodiment, the electric field dust removal treatment method includes: making dust-containing air pass through an ionizing electric field generated by an electric field anode and an electric field cathode to perform dust removal treatment.

In this embodiment, the electric field dust removal processing method further includes: selecting the ratio of the dust accumulation area of the electric field anode to the discharge area of the electric field cathode, the distance between the electric field anode and the electric field cathode, and The length of the electric field anode and the length of the electric field cathode make the coupling times of the ionization electric field≤3.

In this embodiment, the electric field dust removal processing method further includes: a method of providing an auxiliary electric field, including:

An electric field is generated in the flow channel, and the electric field is not perpendicular to the flow channel; there is an angle α between the outlet end of the electric field anode and the near outlet end of the electric field cathode, and α=90°.

The experimental conditions and experimental results are as follows:

The electric field device in this embodiment adopts the electric field device provided in embodiment 1.

The gas is transported into the electric field device for electric field dust removal treatment, the flow rate of the gas into the electric field device is controlled to 6m/s, the particulate matter in the gas is removed, and it is finally discharged from the outlet of the electric field device. Detect the PN value of solid particles of different sizes in the gas at the inlet and outlet of the electric field device. The specific detection particle size is 23nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm. . After testing, in the present embodiment, the PN value of solid particles in the gas at the inlet of the electric field device is 23nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm, see Table 1.

When the DC power supply of the electric field device is turned on, the experiment of removing organic solid particles under the electric field conditions of 5.13 kV and 0.15 mA is carried out. When the electric field is turned on for 60 s under this condition, the PN of the gas at the outlet of the dust removal zone drops significantly, see experimental data Table 2. It can be seen from Table 2 that the removal efficiency of the four sizes of solid particles of 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm are all above 99.99%. Table 1 PN data in the original dusty gas 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm Sample 1 2582573851 125118021 124956891 122857951 119546290 114237456 107800707 Sample 2 2644091872 123485512 123307421 121297527 117998587 112719435 106426855 Sample 3 2575239008 122306714 122128622 120139929 117027562 111816254 105701767 Sample 4 2554654137 122192226 122031095 119961838 116756184 111680565 105404947 Sample 5 2573109540 120712368 120559717 118617668 115314488 110094700 103975972 PN value in the original gas, pieces/m ³ 2585933682 122762968 122596749 120574982 117328622 112109682 105862049 Table 2 PN data after purification under 5.13kV and 0.15 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm Sample 1 180780170 8773145 2645936 4240 4240 0 0 Sample 2 158645512 6805654 2213428 0 0 0 0 Sample 3 206019121 5542050 1649470 8481 0 0 0 Sample 4 194153714 5003534 1581625 4240 0 0 0 Sample 5 82339505 4651590 1454417 8481 0 0 0 Sample 6 181015358 5071378 1568905 0 0 0 0 PN value under 5.13kV, 0.15 mA electric field conditions, pieces/m ³ 167158897 5974558 1852297 4240 707 0 0 PN removal rate under 5.13kV, 0.15 mA electric field conditions,% 93.536 95.133 98.489 99.996 99.999 100.0 100.0

When the electric field is turned on for 300s, the DC power supply parameters of the electric field device are adjusted to 7.07 kV and 0.79 mA, and the organic solid particle removal experiment is carried out. When the electric field is turned on for 60 s, the experimental data is shown in Table 3; from Table 3, 0.5 μm, The removal efficiency of 5 kinds of solid particles of 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm all reach 100% under this electric field condition. Table 3 PN data after purification under 7.07 kV and 0.79 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm Sample 1 1549544 93286 33922 0 0 0 0 Sample 2 1322046 122968 21201 0 0 0 0 Sample 3 1802667 89046 12721 0 0 0 0 Sample 4 1532792 89046 25442 0 0 0 0 Sample 5 1595328 118728 8481 0 0 0 0 Sample 6 1706716 106007 25442 0 0 0 0 PN value under the condition of 7.07kV, 0.79 mA electric field, pieces/m ³ 1584849 103180 21201 0 0 0 0 PN removal rate under the condition of 7.07kV, 0.79 mA electric field,% 99.939 99.916 99.983 100.0 100.0 100.0 100.0

When the electric field is turned on for 300s, the DC power supply parameters of the electric field device are adjusted to 9.10 kV and 2.98 mA, and the experiment of removing organic solid particles is carried out. Under this electric field condition, the requirement for the removal efficiency of 23nm particles in the gas to be more than 99.99% is met. Under this electric field condition, the electric field See Table 4 for the experimental data of the PN value of solid particles of various sizes in the gas at the outlet of the device. It can be seen from Table 4 that under this electric field condition, the removal efficiency of 23nm, 0.3 μm and 0.5 μm solid particles reached more than 99.99%. Table 4 PN data after purification under 9.10 kV and 2.98 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm Sample 1 258257 33922 12721 0 0 0 0 Sample 2 237968 29682 16961 0 0 0 0 Sample 3 206019 12721 4240 0 0 0 0 Sample 4 242692 21201 16961 0 0 0 0 Sample 5 218714 21201 8481 0 0 0 0 Sample 6 212047 21201 0 0 0 0 0 PN value under 9.10kV, 2.98 mA electric field conditions, pieces/m ³ 229283 23322 9894 0 0 0 0 PN removal rate under 9.10kV, 2.98 mA electric field conditions,% 99.991 99.981 99.992 100 100 100 100

Example 20 Ionization and Dust Removal

In this embodiment, the electric field dust removal treatment method includes: making dust-containing air pass through an ionizing electric field generated by an electric field anode and an electric field cathode to perform dust removal treatment. In this embodiment, the electric field device of embodiment 16 is used to transport the dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s, and the particulate matter in the gas is removed. The outlet of the electric field device is discharged. Others are the same as in Example 19.

In this embodiment, the original dust-containing gas, that is, the gas at the inlet of the electric field device has a particle size of 23 nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm for the PN value of solid particles. See Table 1.

When the DC power supply of the electric field device is turned on, the experiment of removing organic solid particles under the conditions of 5.13 kV and 0.15 mA electric field is carried out. When the electric field is turned on for 60 s under this condition, the PN of the gas at the outlet of the dust removal zone drops significantly. Experimental data See Table 5. The data in Table 5 are the average values of 6 samplings. It can be seen from Table 5 that the removal efficiency of solid particles with sizes of 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm all reached more than 99.99%. Table 5 PN data after purification under 5.13kV and 0.15 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 5.13kV, 0.15 mA electric field conditions, pieces/m ³ 6750000 2367 2345 1456 745 345 123 PN removal rate under 5.13kV, 0.15 mA electric field conditions,% 99.739 99.998 99.998 99.999 99.999 99.999 99.999 Table 6 PN data after purification under 7.07 kV and 0.79 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under the condition of 7.07kV, 0.79 mA electric field, pieces/m ³ 5456667 457 678 734 356 56 7 PN removal rate under the condition of 7.07kV, 0.79 mA electric field,% 99.789 99.999 99.999 99.999 99.999 99.999 99.999

Adjust the DC power supply parameters of the electric field device to 7.07 kV and 0.79 mA for 300 s, and carry out the experiment of removing organic solid particles. When the electric field is turned on for 60 s under this condition, the experimental data is shown in Table 6, and the data in Table 6 are all samples 6 As shown in Table 10, the removal efficiency of solid particles with sizes of 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm are all above 99.99%.

The DC power supply parameters of the electric field device were adjusted to 9.10 kV and 2.98 mA for 600 s, and the organic solid particle removal experiment was carried out. Under this electric field condition, the requirement for the removal efficiency of 23nm particles in the gas was met. Under this electric field condition, the gas at the outlet of the electric field device The experimental data of the PN value of solid particles of various sizes are shown in Table 7. The data in Table 7 are the average values of 6 samplings. It can be seen from Table 7 that the removal efficiency of 23nm, 0.3 μm and 0.5 μm solid particles under this electric field condition all reach more than 99.99%. Table 7 PN data after purification under 9.10 kV and 2.98 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 9.10kV, 2.98 mA electric field conditions, pieces/m ³ 345 8 0 0 0 0 0 PN removal rate under 9.10kV, 2.98 mA electric field conditions,% 99.999 99.999 100 100 100 100 100

Example 21 Ionization and Dust Removal

In this embodiment, the electric field dust removal treatment method includes: making dust-laden air pass through the ionizing electric field generated by the electric field anode and the electric field cathode for dust removal treatment; further comprising: selecting the dust accumulation area of the electric field anode and the discharge of the electric field cathode The area ratio makes the coupling times of the ionization electric field ≤ 3.

In this embodiment, the electric field device provided in embodiment 8 is used to transport dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s to remove particles in the gas, and finally the electric field device The outlet of the electric field device is discharged.

Detect the PN value of solid particles of different sizes in the gas at the inlet and outlet of the electric field device. The specific detection particle size is 23nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm. . In this embodiment, the original dust-containing gas, that is, the gas at the inlet of the electric field device has a particle size of 23 nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm for the PN value of solid particles. See Table 1.

When the DC power supply of the electric field device is turned on, the experiment of removing organic solid particles under the electric field conditions of 5.13 kV and 0.15 mA is carried out. When the electric field is turned on for 60 s under this condition, the PN of the gas at the outlet of the dust removal zone drops significantly, see experimental data The data in Table 8 and Table 8 are the average values of 6 samplings. It can be seen from Table 8 that the removal efficiency of solid particles with sizes of 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm all reached more than 99.99%.

Adjust the DC power supply parameters of the electric field device to 7.07 kV and 0.79 mA for 300 s, and carry out the experiment of removing organic solid particles. The experimental data is shown in Table 9. The data in Table 9 are the average value of 6 samples; when the electric field is under this condition After being turned on for 60 s, it can be seen from Table 9 that the removal efficiency of solid particles with sizes of 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm all reached more than 99.99%.

Perform 600 s to adjust the DC power supply parameters of the electric field device to 9.10 kV and 2.98 mA, and carry out the experiment of removing organic solid particles. Under this electric field condition, it meets the requirements for the removal efficiency of 23nm particles in the gas. Under this electric field condition, the gas at the outlet of the electric field device See Table 10 for the experimental data of the PN value of solid particles of various sizes in Table 10. The data in Table 10 are the average values of 6 samplings. It can be seen from Table 10 that the removal efficiency of 23nm, 0.3 μm and 0.5 μm solid particles under this electric field condition is over 99.99%. Table 8 PN data after purification under 5.13kV and 0.15 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 5.13kV, 0.15 mA electric field conditions, pieces/m ³ 6567767 4564 6777 1755 334 789 222 PN removal rate under 5.13kV, 0.15 mA electric field conditions,% 99.746 99.996 99.994 99.999 99.999 99.999 99.999 Table 9 PN data after purification under 7.07 kV and 0.79 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under the condition of 7.07kV, 0.79 mA electric field, pieces/m ³ 5343453 2221 574 223 135 65 53 PN removal rate under the condition of 7.07kV, 0.79 mA electric field,% 99.793 99.998 99.999 99.999 99.999 99.999 99.999 Table 10 15 PN data after purification under 9.10 kV and 2.98 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 9.10kV, 2.98 mA electric field conditions, pieces/m ³ 564 82 7 0 5 0 0 PN removal rate under 9.10kV, 2.98 mA electric field conditions,% 99.999 99.999 99.999 100 99.999 100 100

Example 22 Ionization and Dust Removal

In this embodiment, the electric field dust removal processing method includes: making dust-laden air pass through the ionizing electric field generated by the electric field anode and the electric field cathode to perform dust removal; further comprising: selecting the length of the electric field anode to make the coupling times of the ionizing electric field≤3.

In this embodiment, the electric field device provided in embodiment 9 is used to transport the dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s to remove the particulate matter in the gas, and finally the electric field device The outlet of the electric field device is discharged.

In this embodiment, the original dust-containing gas, that is, the gas at the inlet of the electric field device has a particle size of 23 nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm for the PN value of solid particles. See Table 1.

Turn on the DC power supply of the electric field device, and carry out the experiment of removing organic solid particles under the conditions of 5.13 kV and 0.15 mA electric field. The experimental data is shown in Table 11. The data in Table 11 are the average values of 6 samplings. When the electric field is turned on for 60 s under this condition, the PN of the gas at the outlet of the dust removal zone drops significantly. As can be seen from Table 11, the removal efficiency of solid particles with sizes of 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm all reach 99.99 %above.

Adjust the DC power supply parameters of the electric field device to 7.07 kV and 0.79 mA for 300 s, and carry out the experiment of removing organic solid particles. When the electric field is turned on for 60 s under this condition, the experimental data is shown in Table 12, and the data in Table 12 are all samples 6 As shown in Table 12, the removal efficiency of solid particles with sizes of 23nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm are all above 99.99%. Table 11 PN data after purification under 5.13kV and 0.15 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 5.13kV, 0.15 mA electric field conditions, pieces/m ³ 6763345 81238 7343 345 990 332 434 PN removal rate under 5.13kV, 0.15 mA electric field conditions,% 99.738 99.934 99.994 99.999 99.999 99.999 99.999 Table 12 PN data after purification under 7.07 kV and 0.79 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under the condition of 7.07kV, 0.79 mA electric field, piece/m3 23345 1236 343 346 178 819 56 PN removal rate under the condition of 7.07kV, 0.79 mA electric field,% 99.999 99.999 99.999 99.999 99.999 99.999 99.999

Perform 600 s to adjust the DC power supply parameters of the electric field device to 9.10 kV and 2.98 mA, and carry out the experiment of removing organic solid particles. The experimental data is shown in Table 13, and the data in Table 13 are the average values of 6 samplings. Under the electric field conditions, the removal efficiency of 23nm, 0.3 μm and 0.5 μm solid particles reached more than 99.99%.

In this embodiment, the electric field conditions of 7.07 kV and 0.79 mA, and the electric field conditions of 9.10 kV and 2.98 mA can meet the requirement for the removal efficiency of 23nm particles in the gas to be more than 99.99. Table 13 PN data after purification under 9.10 kV and 2.98 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 9.10kV, 2.98 mA electric field conditions, pieces/m ³ 345 8 0 0 0 0 0 PN removal rate under 9.10kV, 2.98 mA electric field conditions,% 99.999 99.999 100 100 100 100 100

Example 23 Ionization and Dust Removal

In this embodiment, the electric field dust removal processing method includes: passing dust-laden air through the ionizing electric field generated by the electric field anode and the electric field cathode for dust removal; and further includes: selecting the electric field cathode length so that the coupling times of the ionizing electric field are ≤3.

In this embodiment, the electric field device provided in embodiment 10 is used to transport dust-containing gas into the electric field device for electric field dust removal treatment, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s, and the particulate matter in the gas is removed, and finally the electric field device The outlet of the electric field device is discharged.

Detect the PN value of solid particles of different sizes in the gas at the inlet and outlet of the electric field device. The specific detection particle size is 23nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm. . In this embodiment, the original dust-containing gas, that is, the gas at the inlet of the electric field device has a particle size of 23 nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm for the PN value of solid particles. See Table 1.

Turn on the DC power supply of the electric field device, and carry out the experiment of removing organic solid particles under the electric field conditions of 5.13 kV and 0.15 mA. When the electric field is turned on for 60 s under this condition, the PN of the gas at the outlet of the dust removal zone drops significantly. See the table for experimental data. 14. The data in Table 14 are the average of 6 samplings. It can be seen from Table 14 that the removal efficiency of solid particles with sizes of 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm all reached more than 99.99%.

Adjust the DC power supply parameters of the electric field device to 7.07 kV and 0.79 mA for 300 s, and carry out the experiment of removing organic solid particles. When the electric field is turned on for 60 s under this condition, the experimental data is shown in Table 15, and the data in Table 15 are all samples 6 It can be seen from Table 15 that the removal efficiency of solid particles with a size of 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm are all above 99.99%. Table 14 PN data after purification under 5.13kV and 0.15 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 5.13kV, 0.15 mA electric field conditions, pieces/m ³ 3234345 123123 16565 9756 6855 3112 2323 PN removal rate under 5.13kV, 0.15 mA electric field conditions,% 99.875 99.900 99.986 99.992 99.994 99.997 99.998 Table 15 PN data after purification under 7.07 kV and 0.79 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under the condition of 7.07kV, 0.79 mA electric field, pieces/m ³ 887666 32434 4545 873 545 625 233 PN removal rate under the condition of 7.07kV, 0.79 mA electric field,% 99.966 99.974 99.996 99.999 99.999 99.999 99.999

Perform 600 s to adjust the DC power supply parameters of the electric field device to 9.10 kV and 2.98 mA, and carry out the experiment of removing organic solid particles. The experimental data is shown in Table 16. The data in Table 16 are the average of 6 samplings. Under this electric field condition, the removal efficiency of 23nm, 0.3 μm and 0.5 μm solid particles are all above 99.99%.

In this embodiment, the electric field conditions of 9.10 kV and 2.98 mA can meet the requirement for the removal efficiency of 23nm particles in the gas to be above 99.99. Table 16 PN data after purification under 9.10 kV and 2.98 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 9.10kV, 2.98 mA electric field conditions, pieces/m ³ 435 0 0 0 0 0 0 PN removal rate under 9.10kV, 2.98 mA electric field conditions,% 99.999 100 100 100 100 100 100

Example 24 Ionization and Dust Removal

In this embodiment, the electric field dust removal treatment method includes: making dust-laden air pass through the ionizing electric field generated by the electric field anode and the electric field cathode to perform dust removal treatment; further comprising: selecting the electrode distance between the electric field anode and the electric field cathode The coupling times of the ionization electric field≤3.

In this embodiment, the electric field device provided in embodiment 11 is used to transport dust-containing gas into the electric field device for electric field dust removal, and the flow rate of the dust-containing gas into the electric field device is controlled to 6m/s to remove particles in the gas, and finally the electric field device The outlet of the electric field device is discharged.

In this embodiment, the electric field device of embodiment 11 is used.

The dust-containing gas is transported into the electric field device for electric field dust removal treatment, the flow rate of the dust-containing gas into the electric field device is controlled to be 6m/s, the particulate matter in the gas is removed, and it is finally discharged from the electric field device outlet of the electric field device. Detect the PN value of solid particles of different sizes in the gas at the inlet and outlet of the electric field device. The specific detection particle size is 23nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm. . In this embodiment, the original dust-containing gas, that is, the gas at the inlet of the electric field device has a particle size of 23 nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm for the PN value of solid particles. See Table 1.

Turn on the DC power supply of the electric field device, and carry out the experiment of removing organic solid particles under the electric field conditions of 5.13 kV and 0.15 mA. When the electric field is turned on for 60 s under this condition, the PN of the gas at the outlet of the dust removal zone drops significantly. See the table for experimental data. 17. The data in Table 17 are the average of 6 samplings. It can be seen from Table 17 that the removal efficiency of solid particles with sizes of 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm all reached more than 99.99%.

Adjust the DC power supply parameters of the electric field device to 7.07 kV and 0.79 mA at 1017 s, and perform the experiment of removing organic solid particles. When the electric field is turned on for 60 s under this condition, the experimental data is shown in Table 18. The data in Table 18 are all sampled 6 times From Table 18, we can see that the removal efficiency of solid particles with sizes of 23 nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm are all above 99.99%. Table 17 PN data after purification under 5.13kV and 0.15 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 5.13kV, 0.15 mA electric field conditions, pieces/m ³ 6034921 28114 8953 1090 3421 2932 1122 PN removal rate under 5.13kV, 0.15 mA electric field conditions,% 99.767 99.977 99.993 99.999 99.997 99.997 99.999 Table 18 PN data after purification under 7.07 kV and 0.79 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under the condition of 7.07kV, 0.79 mA electric field, pieces/m ³ 129887 7767 3445 6754 632 934 675 PN removal rate under 7.07kV, 0.79 mA electric field conditions,% 99.995 99.994 99.997 99.994 99.999 99.999 99.999

In 1317 s, the DC power supply parameters of the electric field device were adjusted to 9.10 kV and 2.98 mA, and the experiment of removing organic solid particles was carried out. The experimental data is shown in Table 19, and the data in Table 19 are the average values of 6 samplings. Under the electric field conditions, the removal efficiency of 23nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm solid particles reached more than 99.99%.

In this embodiment, the electric field conditions of 7.07 kV and 0.79 mA, and the electric field conditions of 9.10 kV and 2.98 mA can meet the requirement for the removal efficiency of 23nm particles in the gas to be above 99.99%. Table 19 PN data after purification under 9.10 kV and 2.98 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 9.10kV, 2.98 mA electric field conditions, pieces/m ³ 323 0 0 0 0 0 0 PN removal rate under 9.10kV, 2.98 mA electric field conditions,% 99.999 100 100 100 100 100 100

Example 25 Ionization and Dust Removal

In this embodiment, the electric field dust removal treatment method includes: making dust-containing air pass through the ionizing electric field generated by the electric field anode and the electric field cathode to perform dust removal treatment; and also includes a method of providing an auxiliary electric field.

This embodiment uses the electric field device of Embodiment 12.

The dust-containing gas is transported into the electric field device for electric field dust removal treatment, the flow rate of the dust-containing gas into the electric field device is controlled to be 6m/s, the particulate matter in the gas is removed, and it is finally discharged from the electric field device outlet of the electric field device. In this embodiment, the original dust-containing gas, that is, the gas at the inlet of the electric field device has a particle size of 23 nm, 0.3 μm, 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm for the PN value of solid particles. See Table 1.

Turn on the DC power supply of the electric field device, and carry out the experiment of removing organic solid particles under the electric field conditions of 5.13 kV and 0.15 mA. When the electric field is turned on for 60 s under this condition, the PN of the gas at the outlet of the dust removal zone drops significantly. See the table for experimental data. 20. The data in Table 20 are the average of 6 samples.

Adjust the DC power supply parameters of the electric field device to 7.07 kV and 0.79 mA for 300 s, and carry out the experiment of removing organic solid particles. When the electric field is turned on for 60 s under this condition, the experimental data is shown in Table 21. The data in Table 21 are all samples 6 As shown in Table 21, the removal efficiency of solid particles with sizes of 0.5 μm, 1.0 μm, 3.0 μm, 5.0 μm, and 10 μm all reached 99.99% or more. Table 20 PN data after purification under 5.13kV and 0.15 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 5.13kV, 0.15 mA electric field conditions, pieces/m ³ 23458902 7654323 24544 34545 67345 7442 2324 PN removal rate under 5.13kV, 0.15 mA electric field conditions,% 99.283 93.765 99.980 99.971 99.943 99.993 99.998 Table 21 PN data after purification under 7.07 kV and 0.79 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under the condition of 7.07kV, 0.79 mA electric field, pieces/m ³ 95321122 568222 333 3445 1445 542 675 PN removal rate under the condition of 7.07kV, 0.79 mA electric field,% 96.314 99.537 99.999 99.997 99.999 99.999 99.999 Table 22 PN data after purification under 9.10 kV and 2.98 mA electric field conditions 23nm 0.3μm 0.5μm 1.0μm 3.0μm 5.0μm 10μm PN value under 9.10kV, 2.98 mA electric field conditions, pieces/m ³ 5333 0 5 0 0 0 0 PN removal rate under 9.10kV, 2.98 mA electric field conditions,% 99.999 100 99.999 100 100 100 100

Perform 600 s to adjust the DC power supply parameters of the electric field device to 9.10 kV and 2.98 mA, and carry out the experiment of removing organic solid particles. The experimental data is shown in Table 22. The data in Table 22 are the average of 6 samples.

In this embodiment, the electric field conditions of 9.10 kV and 2.98 mA can meet the requirement for the removal efficiency of 23nm particles in the gas to be above 99.99%.

Example 26

This embodiment provides a semiconductor manufacturing method, including the following steps:

A: Air dust removal: air enters the electric field dust removal system through the ionizing electric field generated by the electric field anode and the electric field cathode to remove particulate matter in the gas; the electric field dust removal system in this embodiment includes the electric field device in the embodiment 1-17; after the electric field dust removal The purified gas enters the clean room to provide purified gas for semiconductor manufacturing in the clean room.

In the clean room, perform the following operations:

S1, using CVD (Chemical Vapor Deposition, chemical vapor deposition) or PVD (Physical Vapor Deposition, physical vapor deposition) process to form a thin film on the substrate.

S2, forming a channel on the film, the channel exposing the surface of the substrate.

The formation of the groove includes the following steps: coating photoresist on the surface of the film; exposing the photoresist through a mask; developing the photoresist and cleaning and removing part of the photoresist to expose Part of the film surface; etching the exposed film to expose part of the substrate surface to form a channel.

S3, ion infiltrate the substrate exposed by the trench to form a specific structure with electronic characteristics.

In this embodiment, the photoresist can be a positive glue or a reverse glue.

In this embodiment, in step S1, the material of the substrate may be silicon, germanium, silicon germanium, silicon carbide, gallium arsenide, indium arsenide, or indium phosphide.

In this embodiment, in step S1, the main component of the thin film is one or any combination of silicon nitride, silicon oxide, silicon carbide, and polysilicon.

In this embodiment, in step S2, the etching may be dry etching or wet etching.

In this embodiment, in step S3, the ion infiltration is diffusion or ion implantation.

In this embodiment, in step S3, the electronic characteristic is a PN junction.

In summary, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial value.

The above-mentioned embodiments only exemplarily illustrate the principles and effects of the present invention, but are not used to limit the present invention. Anyone familiar with this technology can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

100: Clean room system 101: clean room 1011: Entrance of electric field device 1013: Front electrode 10141: electric field anode 101411: second anode part 101412: the first anode part 10142: electric field cathode 10143: Cathode support plate 1015: Insulation mechanism 1018: Ozone Unit 102: Electric field dust removal system 1021: electric field device 206: In addition to ozone device 3081: electric field cathode 3082: electric field anode 3083: Front electrode 3085: Entrance of electric field device 3086: runner 3087: Electric field flow channel 3088: Exit of electric field device 4051: electric field anode 4052: electric field cathode 4053: First electric field 4054: second electric field 4055: Connection shell 5081: electric field cathode 5082: electric field anode 5083: auxiliary electrode 5084: anode tube α: included angle

FIG. 1 is a schematic diagram of the structure of an electric field device in Embodiment 1 of the present invention. 2 is a schematic diagram of the structure of the electric field generating unit in the embodiment 2-11 of the present invention. Fig. 3 is an A-A view of the electric field generating unit of Fig. 2 in embodiment 2 and embodiment 5 of the present invention. Fig. 4 is an A-A view of the electric field generating unit of Fig. 2 marked with length and angle in embodiment 2 and embodiment 5 of the present invention. FIG. 5 is a schematic diagram of the structure of the electric field device with two electric field levels in Embodiment 2 and Embodiment 5 of the present invention. FIG. 6 is a schematic structural diagram of an electric field device in Embodiment 12 of the present invention. FIG. 7 is a schematic structural diagram of an electric field device in Embodiment 14 of the present invention. FIG. 8 is a schematic diagram of the structure of an electric field device in Embodiment 15 of the present invention. FIG. 9 is a schematic diagram of the structure of an electric field device in Embodiment 16 of the present invention. FIG. 10 is a schematic diagram of the structure of the electric field dust removal system in Embodiment 17 of the present invention. Fig. 11 is a schematic structural diagram of a clean room system in embodiment 18 of the present invention.

1011: Entrance of electric field device

1013: Front electrode

10141: electric field anode

101411: second anode part

101412: the first anode part

10142: electric field cathode

10143: Cathode support plate

1015: Insulation mechanism

1018: Ozone Unit

Claims (16)

A clean room system for semiconductor manufacturing, including a clean room and an electric field dust removal system; the clean room includes a gas inlet; the electric field dust removal system includes a dust removal system outlet and an electric field device; the gas inlet of the clean room and the electric field The outlet of the dust removal system of the dust removal system is connected; the electric field device includes an electric field device inlet, an electric field device outlet, an electric field cathode and an electric field anode, the electric field cathode and the electric field anode are used to generate an ionizing electric field; the electric field anode includes one or more Hollow anode tubes arranged in parallel, the electric field cathode penetrates the electric field anode; the electric field device further includes a front electrode, and the front electrode is connected to the electric field anode and the electric field anode at the entrance of the electric field device Between the ionization dust removal electric field formed by the electric field cathode; the front electrode can charge the particles in the gas by contacting the particles in the gas. The clean room system for semiconductor manufacturing according to claim 1, wherein at least one through hole is provided on the front electrode. The clean room system for semiconductor manufacturing according to claim 2, wherein the hole diameter of the through hole is 0.1-3 mm. The clean room system for semiconductor manufacturing according to any one of claims 1 to 3, wherein the front electrode has a surface shape, a mesh shape, a hole plate shape, or a plate shape. The clean room system for semiconductor manufacturing according to claim 4, wherein, during operation, before the gas enters the ionization dust removal electric field formed by the electric field cathode and the electric field anode, and the gas passes through the front electrode, the The front electrode charges the particles in the gas. The clean room system for semiconductor manufacturing according to claim 5, wherein when gas enters the ionization dust removal electric field, the electric field anode applies an attractive force to the charged particles to move the charged particles to the electric field anode, Until the charged particles adhere to the anode of the electric field. The clean room system for semiconductor manufacturing according to claim 1, wherein the front electrode introduces electrons into the particulate matter in the gas, and the electrons are transferred between the front electrode and the electric field anode to make more More particles in the gas are charged. The clean room system for semiconductor manufacturing according to claim 1, wherein the front electrode is perpendicular to the electric field anode. The clean room system for semiconductor manufacturing according to claim 1, wherein the front electrode is parallel to the electric field anode. The clean room system for semiconductor manufacturing according to claim 1, wherein the front electrode adopts a wire mesh. The clean room system for semiconductor manufacturing according to claim 1, wherein the voltage between the front electrode and the electric field anode is different from the voltage between the electric field cathode and the electric field anode. The clean room system for semiconductor manufacturing according to claim 1, wherein the voltage between the front electrode and the electric field anode is less than the initial corona initiation voltage. The clean room system for semiconductor manufacturing according to claim 1, wherein the voltage between the front electrode and the electric field anode is 0.1-2 kv/mm. The clean room system for semiconductor manufacturing according to claim 1, wherein the electric field device includes a flow channel, and the front electrode is located in the flow channel; the cross section of the front electrode The ratio of the area to the cross-sectional area of the flow channel is 99%-10%, or 90-10%, or 80-20%, or 70-30%, or 60-40%, or 50%. A semiconductor manufacturing system, comprising the clean room system for semiconductor manufacturing according to any one of Claims 1 to 14, and further comprising: a thin film preparation device arranged in the clean room; and a thin film etching device arranged in the Clean room; the ion doping device is set in the clean room. A semiconductor manufacturing method includes the following steps: air enters the electric field dust removal system according to any one of claims 1-14 to remove particles in the air; the purified gas after the electric field dust removal is input into the clean room; In the clean room, a thin film is formed on the substrate; in the clean room, a channel is formed on the thin film, and the channel exposes the surface of the substrate; in the clean room, the channel is exposed to The substrate undergoes ion infiltration, so that the substrate has electronic properties.

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