WO2020215489A1 - 有机发光器件及显示装置 - Google Patents

有机发光器件及显示装置 Download PDF

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WO2020215489A1
WO2020215489A1 PCT/CN2019/094499 CN2019094499W WO2020215489A1 WO 2020215489 A1 WO2020215489 A1 WO 2020215489A1 CN 2019094499 W CN2019094499 W CN 2019094499W WO 2020215489 A1 WO2020215489 A1 WO 2020215489A1
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layer
quantum dot
organic light
emitting device
electrode
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French (fr)
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王士攀
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

Definitions

  • the invention relates to the fields of displays and the like, in particular to an organic light-emitting device and a display device.
  • OLED Organic light-emitting diode displays
  • advantages such as high contrast, large viewing angle, fast response speed, thinness and flexibility.
  • small-size OLED products adopt vacuum evaporation and fine mask technology to realize RGB three-color display, which has become mature.
  • large-size OLED products have been abandoned because of the serious warpage and deformation of the mask after the size has increased, which has increased the difficulty of alignment, resulting in a very low yield.
  • the vacuum evaporation white light adopts a multi-layer structure, which faces the disadvantages of complex equipment and process, high energy consumption, large material waste, and high cost.
  • the organic functional materials are configured into ink, they are injected into the pixel groove drop by drop, which can achieve the maximum use of materials, effectively reduce costs, and have great advantages in preparing large-size OLED panels.
  • the current luminescent materials used in inkjet printing OLEDs still face the disadvantages of a wide emission spectrum, which is not conducive to improving the color gamut of the display.
  • the quantum dot material has a very narrow half-width of the emission spectrum and extremely high color purity, which can greatly increase the color gamut of the display.
  • currently quantum dot materials are used as color conversion layer materials and are generally placed outside the light-emitting components, requiring additional manufacturing processes.
  • the present invention provides an organic light-emitting device and a display device, by adding a quantum dot layer between the electron injection layer and the electron transport layer, so that the quantum dots in the quantum dot layer emit a narrower spectrum.
  • the extremely narrow emission spectrum of quantum dots will not have the phenomenon of shoulder peak enhancement caused by the microcavity effect, so as to improve the purity of the emission color.
  • the present invention provides an organic light-emitting device comprising an electron transport layer, an electron injection layer and a quantum dot layer, the quantum dot layer being arranged between the electron transport layer and the electron injection layer.
  • the material used for the quantum dot layer is a binary quantum dot material of group II-VI chemical elements, or a ternary or more quantum dot material of group I-II-VI chemical elements;
  • the binary quantum dot material includes at least one of cadmium sulfide, zinc sulfide, cadmium selenide, and cadmium telluride;
  • the ternary or more quantum dot material includes zinc cadmium selenide, copper indium sulfide, and zinc copper indium sulfide. At least one.
  • the emission color of the quantum dot layer is one of blue, green, yellow, and red.
  • the material used for the quantum dot layer includes core-shell quantum dots, which are nano-scale semiconductor particles.
  • the thickness of the quantum dot layer is 1 nm-100 nm.
  • the quantum dot layer further includes a doped material with electron transport properties.
  • the organic light-emitting device further includes a first electrode; a hole injection layer is provided on the first electrode; a hole transport layer is provided on the hole injection layer; The light-emitting layer is provided on the hole transport layer, the electron transport layer is provided on the light-emitting layer; and the second electrode is provided on the electron injection layer.
  • the first electrode is a reflective electrode; the second electrode is a transparent electrode.
  • the material used for the transparent electrode is at least one of metal materials, metal alloys, and metal oxides
  • the material used for the reflective electrode is at least one of metal materials, metal alloys, and metal oxides.
  • the work function of the transparent electrode is smaller than the work function of the reflective electrode.
  • the invention also discloses a display device having the organic light-emitting device.
  • a quantum dot layer is added between the electron injection layer and the electron transport layer.
  • the quantum dot layer When excited by a certain energy of light, the quantum dot layer can emit fluorescence at a specific frequency, and the emission wavelength
  • the size of the quantum dot layer changes, by changing the size of the quantum dot layer and the chemical composition in the quantum dot layer, the emitted spectrum can cover the entire visible light region.
  • the quantum dot material has a very narrow half-width emission spectrum and high fluorescence quantum efficiency, and can be used as a good light-color conversion material.
  • inorganic quantum dot semiconductor materials have a high carrier mobility.
  • the electrons injected from the cathode can pass through the quantum dot layer and the electron transport layer, between the light-emitting layer and the electron transport layer.
  • the holes injected by the anode recombine and emit light.
  • the quantum dots are excited to emit a narrower spectrum, and the extremely narrow emission spectrum of the quantum dots will not have the shoulder peak enhancement phenomenon caused by the microcavity effect. Thereby effectively improving the purity of the luminous color.
  • FIG. 1 is a schematic structural diagram of an organic light emitting device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a display device according to an embodiment of the present invention.
  • Electron injection layer 18 The second electrode.
  • the organic light emitting device 10 of the present invention includes a first electrode 11, a hole injection layer 12, a hole transport layer 13, a light emitting layer 14, an electron transport layer 15, and a quantum dot layer 16. , The electron injection layer 17 and the second electrode 18.
  • the first electrode 11 is a reflective electrode that serves as an anode.
  • the reflective electrode is made of at least one of metal materials, metal alloys, and metal oxides.
  • the thickness of the first electrode 11 is 20-210 nm.
  • the material used for the reflective electrode is metallic silver and indium tin oxide.
  • metallic silver and indium tin oxide are sputtered on the base layer by a magnetron sputtering film forming method to form the first electrode 11 having a silver layer and an indium tin oxide layer.
  • the thickness of the silver layer is 10-120 nm, preferably 100 nm
  • the thickness of the indium tin oxide layer is 10-90 nm, preferably 70 nm.
  • the work function of the reflective electrode is greater than 4 and less than or equal to 6.
  • the hole injection layer 12 is provided on the first electrode 11; the material used for the hole injection layer 12 is an organic small molecule or polymer hole injection material. In this embodiment, 3,4-ethylenedioxy is used. Thiophene-doped polystyrene sulfonate material (PEDOT:PSS), the thickness of the hole injection layer 12 is 1 nm-100 nm, preferably 40 nm. In the actual preparation process, the organic small molecule or polymer hole injection material is printed on the first electrode 11 by an inkjet printing method to form the hole injection layer 12.
  • PEDOT:PSS Thiophene-doped polystyrene sulfonate material
  • the hole transport layer 13 is provided on the hole injection layer 12; the material used for the hole transport layer 13 is organic small molecule or polymer hole transport material.
  • the material used for the hole transport layer 13 is organic small molecule or polymer hole transport material.
  • polyvinyl carbazole ( PVK) material the thickness of the hole transport layer 13 is 1 nm-100 nm, preferably 20 nm.
  • small organic molecules or polymer hole transport materials are printed on the hole injection layer 12 by an inkjet printing method to form the hole transport layer 13.
  • the light-emitting layer 14 is disposed on the hole transport layer 13, and the material used for the light-emitting layer 14 includes at least one of organic small molecules or polymer fluorescent materials, phosphorescent materials, and thermally activated delayed fluorescence (TADF) materials. In this embodiment, poly-p-styrene (PPV) material is selected.
  • the thickness of the light-emitting layer 14 is 1 nm-200 nm, preferably 60 nm. In the actual preparation process, the material used for the light-emitting layer 14 is printed on the hole transport layer 13 by an inkjet printing method to form the light-emitting layer 14.
  • the electron transport layer 15 is provided on the light-emitting layer 14; the material used for the electron transport layer 15 is organic small molecule or polymer electron transport material. In this embodiment, a polyfluorene-based conjugated polymer (PFN) material is used.
  • the thickness of the electron transport layer 15 is 1 nm to 100 nm, preferably 20 nm. In the actual preparation process, the material used for the electron transport layer 15 is printed on the light-emitting layer 14 by an inkjet printing method to form the electron transport layer 15.
  • the quantum dot layer 16 is provided on the electron transport layer 15; in this embodiment, the material used for the quantum dot layer 16 includes core-shell quantum dots, which are nano-scale semiconductor particles.
  • the outer shell is a layer structure formed of organic matter or a laminated structure formed of organic matter and inorganic matter.
  • the material used for the quantum dot layer 16 is a binary quantum dot material of group II-VI chemical elements, or a ternary or more quantum dot material of group I-II-VI chemical elements; the binary quantum dot material includes sulfur At least one of cadmium, zinc sulfide, cadmium selenide, and cadmium telluride; the ternary or more quantum dot material includes at least one of cadmium zinc selenide, copper indium sulfide, and zinc copper indium sulfide.
  • the emission color of the quantum dot layer 16 is one of blue, green, yellow, and red.
  • the thickness of the quantum dot layer 16 is 1 nm-100 nm, preferably 20 nm. In the actual preparation process, the material used for the quantum dot layer 16 is printed on the electron transport layer 15 by an inkjet printing method to form the quantum dot layer 16.
  • the quantum dot layer 16 further includes a doping material with electron transport properties.
  • the quantum dots of the core-shell structure and the doped material are mutually doped to form the material for the quantum dot layer 16.
  • zinc oxide is selected as the doping material.
  • the electron injection layer 17 is provided on the quantum dot layer 16.
  • the materials used for the electron injection layer 17 include alkali metals and their salts, or alkaline earth metals and their salts, or metal complexes.
  • the material used for the electron injection layer 17 is lithium fluoride; the thickness of the electron injection layer 17 is 0.5 nm-10 nm, preferably 1 nm.
  • the material used for the electron injection layer 17 is evaporated on the quantum dot layer 16 by a vacuum evaporation method to form the electron injection layer 17.
  • the second electrode 18 is provided on the electron injection layer 17.
  • the second electrode 18 is a transparent electrode, which serves as a cathode.
  • the material used for the transparent electrode is a metal material or a metal alloy or a metal oxide, for example, indium zinc oxide is used as the metal oxide.
  • the work function of the second electrode 18 is less than the work function of the first electrode 11, and the work function of the second electrode 18 is less than 4.
  • the material of the second electrode 18 is magnesium-silver alloy.
  • the thickness of the second electrode 18 is 10 nm-200 nm, preferably 20 nm. In the actual preparation process, the material used for the second electrode 18 is vapor-deposited on the electron injection layer 17 by a vacuum evaporation method to form the second electrode 18.
  • the quantum dot layer 16 in this embodiment can emit fluorescence of a specific frequency, and the emission wavelength will change with the size of the quantum dot layer 16, by changing the quantum dot layer 16
  • the size of the layer 16 and the chemical composition in the quantum dot layer 16 enable the emission spectrum to cover the entire visible light region.
  • the quantum dot material has a very narrow half-width emission spectrum and high fluorescence quantum efficiency, and can be used as a good light-color conversion material.
  • inorganic quantum dot semiconductor materials have high carrier mobility.
  • the electrons injected from the cathode can pass through the quantum dot layer 16 and the electron transport layer 15, where the light-emitting layer 14 and The holes injected from the anode recombine and emit light.
  • the quantum dots When the light passes through the quantum dot layer 16, the quantum dots are excited to emit a narrower spectrum, and the extremely narrow emission spectrum of the quantum dots will not have the shoulder caused by the microcavity effect. Peak enhancement phenomenon, thereby effectively improving the purity of the luminous color.
  • the present invention also discloses a display device 1 having the organic light emitting device 10 and the array substrate 20 described above.
  • the organic light-emitting device 10 is disposed on the array substrate 20.
  • the array substrate 20 has source and drain electrodes, and the first electrode 11 is connected to the source and drain electrodes.
  • the hole transport layer 13, the light emitting layer 14, the electron transport layer 15, the quantum dot layer 16, the electron injection layer 17, and the second electrode 18 are sequentially arranged on the first electrode 11 in the slot.
  • the main design point of the display device 1 of this embodiment lies in the organic light emitting device 10, and other devices or structures, such as the color filter substrate and other structures of the array substrate 20, will not be repeated.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明公开了一种有机发光器件及显示装置，有机发光器件包括电子传输层、电子注入层以及量子点层，所述量子点层设于所述电子传输层和电子注入层之间。本发明的有机发光器件及显示装置，通过在电子注入层和电子传输层之间增加一量子点层，以使量子点层中的量子点发出更窄的光谱，而量子点极窄的发光光谱不会有微腔效应导致的肩峰增强现象，提高了发光色纯度。

Description

有机发光器件及显示装置 技术领域
本发明涉及显示器等领域，具体为一种有机发光器件及显示装置。
 背景技术
有机发光二极管显示（OLED）由于具有高对比、大视角、响应速度快、轻薄柔性等优点，目前已被广泛应用到平板显示装置中。目前小尺寸OLED产品采用真空蒸镀和精细掩模版技术，实现RGB三色显示，已趋向成熟。但大尺寸OLED产品由于掩模版在尺寸变大后翘曲变形严重，增加了对位难度，导致良率很低已被弃用。
目前一般通过白光和彩色滤光片技术实现大尺寸彩色显示。但是真空蒸镀白光采用多层结构，面临着设备和工艺复杂、能耗高、材料浪费大、成本高等缺点。通过喷墨打印OLED技术，将有机功能材料配置成墨水后，一滴一滴地打进像素槽内，可以实现材料的最大程度利用，有效降低成本，在制备大尺寸OLED面板方面具有极大的优势。但目前喷墨打印OLED用的发光材料，仍面临着发光光谱较宽，不利于提高显示器的色域等缺点。量子点材料具有非常窄的发光光谱半峰宽，极高的色纯度，可以大幅提高显示器的色域值。但目前量子点材料作为色转换层材料，一般置于发光元器件外部，需要额外的制程工艺。
 技术问题
为解决上述技术问题：本发明提供一种有机发光器件、显示装置，通过在电子注入层和电子传输层之间增加一量子点层，以使量子点层中的量子点发出更窄的光谱，而量子点极窄的发光光谱不会有微腔效应导致的肩峰增强现象，以提高发光色纯度。
 技术解决方案
解决上述问题的技术方案是：本发明提供一种有机发光器件，包括电子传输层、电子注入层以及量子点层，所述量子点层设于所述电子传输层和电子注入层之间。
在本发明一实施例中，所述量子点层所用材料为Ⅱ-Ⅵ族化学元素的二元量子点材料，或者为Ⅰ-Ⅱ-Ⅵ族化学元素的三元或以上量子点材料；所述二元量子点材料包括硫化镉、硫化锌、硒化镉、碲化镉中的至少一种；所述三元或以上量子点材料包括硒化锌镉、硫化铜铟、硫化锌铜铟中的至少一种。
在本发明一实施例中，所述量子点层的发光颜色为蓝色、绿色、黄色、红色中的一种。
在本发明一实施例中，所述量子点层所用材料包括核壳结构的量子点，其为纳米级别的半导体颗粒。
在本发明一实施例中，所述量子点层的厚度为1 nm-100 nm。
在本发明一实施例中，所述量子点层中还包括具有电子传输性质的掺杂材料。
在本发明一实施例中，所述的有机发光器件，还包括第一电极；空穴注入层，设于所述第一电极上；空穴传输层，设于所述空穴注入层上；发光层，设于所述空穴传输层上，所述电子传输层设于所述发光层上；以及第二电极，设于所述电子注入层上。
在本发明一实施例中，所述第一电极为反射电极；所述第二电极为透明电极。
在本发明一实施例中，所述透明电极所用材料为金属材料、金属合金、金属氧化物中的至少一种；所述反射电极所用材料为金属材料、金属合金、金属氧化物中的至少一种，所述透明电极的功函数小于反射电极的功函数。
本发明还公开了一种显示装置，具有所述的有机发光器件。
 有益效果
本发明的有机发光器件、显示装置，通过在电子注入层和电子传输层之间增加一量子点层，当受到一定能量的光激发后，量子点层可以发出特定频率的荧光，而发光波长会随着量子点层的尺寸的改变而变化，通过改变所述量子点层的尺寸和所述量子点层中的化学组分，使其发射的光谱能够覆盖整个可见光区。量子点材料具有半峰宽非常窄的发射光谱和高的荧光量子效率，可以作为一种良好的光色转换材料。同时相对于有机半导体材料，无机量子点半导体材料具有高的载流子迁移率，从阴极注入的电子可以穿过所述量子点层及所述电子传输层，在所述发光层与从所述阳极注入的空穴复合发光，当光再穿过所述量子点层时，激发量子点发出更窄的光谱，而量子点极窄的发光光谱不会有微腔效应导致的肩峰增强现象，从而有效提高发光色纯度。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
下面结合附图和实施例对本发明作进一步解释。
图1是本发明实施例的有机发光器件的结构示意图。
图2是本发明实施例的显示装置的结构示意图。
附图标记：
1显示装置；                   10有机发光器件；
20阵列基板；                  21像素限定层；
11第一电极；                  12空穴注入层；
13空穴传输层；                14发光层；
15电子传输层；                16量子点层；
17电子注入层；                18第二电极。
 本发明的实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
如图1所示，在一实施例中：本发明的有机发光器件10包括第一电极11、空穴注入层12、空穴传输层13、发光层14、电子传输层15、量子点层16、电子注入层17以及第二电极18。
所述第一电极11为反射电极，其作为阳极，所述反射电极所用材料为金属材料、金属合金、金属氧化物中的至少一种，所述第一电极11的厚度为20-210nm。本实施例中，所述反射电极所用材料为金属银和氧化铟锡。在实际制备过程中，通过磁控溅射成膜法将金属银和氧化铟锡溅射于基层上，形成具有银层和氧化铟锡层的第一电极11。其中，所述银层厚度为10-120nm，优选为100nm，氧化铟锡层厚度为10-90nm，优选为70nm。所述反射电极的功函数大于4且小于等于6。
所述空穴注入层12设于所述第一电极11上；所述空穴注入层12所用材料为有机小分子或聚合物空穴注入材料，本实施例中采用3，4-乙烯二氧噻吩掺杂聚苯乙烯磺酸盐材料（PEDOT:PSS），所述空穴注入层12的厚度为1nm-100nm，优选为40nm。在实际制备过程中，通过喷墨打印法将有机小分子或聚合物空穴注入材料打印在第一电极11上，形成空穴注入层12。
所述空穴传输层13设于所述空穴注入层12上；所述空穴传输层13所用材料为有机小分子或聚合物空穴传输材料，本实施例中采用聚乙烯基咔唑（PVK）材料，所述空穴传输层13的厚度为1nm-100nm，优选为20nm。在实际制备过程中，通过喷墨打印法将有机小分子或聚合物空穴传输材料打印在所述空穴注入层12上，形成空穴传输层13。
所述发光层14设于所述空穴传输层13上，所述发光层14所用材料包括有机小分子或聚合物荧光材料、磷光材料、热活化延迟荧光（TADF）材料中的至少一种。本实施例中选择聚对苯乙烯（PPV）材料。所述发光层14的厚度为1 nm-200nm，优选为60nm。在实际制备过程中，通过喷墨打印法将所述发光层14所用材料打印在所述空穴传输层13上，形成发光层14。
所述电子传输层15设于所述发光层14上；所述电子传输层15所用材料为有机小分子或聚合物电子传输材料，本实施例中采用聚芴类共轭高分子（PFN）材料，所述电子传输层15的厚度为1 nm到100 nm，优选为20 nm。在实际制备过程中，通过喷墨打印法将所述电子传输层15所用材料打印在所述发光层14上，形成电子传输层15。
所述量子点层16设于所述电子传输层15上；本实施例中，所述量子点层16所用材料包括核壳结构的量子点，核壳结构的量子点为纳米级别的半导体颗粒，在所述核壳结构的量子点中，其外壳为有机物形成的层结构或有机物和无机物形成的叠层结构。所述量子点层16所用材料为Ⅱ-Ⅵ族化学元素的二元量子点材料，或者为Ⅰ-Ⅱ-Ⅵ族化学元素的三元或以上量子点材料；所述二元量子点材料包括硫化镉、硫化锌、硒化镉、碲化镉中的至少一种；所述三元或以上量子点材料包括硒化锌镉、硫化铜铟、硫化锌铜铟中的至少一种。所述量子点层16的发光颜色为蓝色、绿色、黄色、红色中的一种。所述量子点层16的厚度为1 nm-100 nm，优选为20nm。在实际制备过程中，通过喷墨打印法将所述量子点层16所用材料打印在所述电子传输层15上，形成量子点层16。
本实施例中，所述量子点层16中还包括具有电子传输性质的掺杂材料。所述核壳结构的量子点与掺杂材料相互掺杂形成所述量子点层16所用材料。本实施例中，所述掺杂材料选择氧化锌。
所述电子注入层17设于所述量子点层16上。所述电子注入层17所用材料包括碱金属及其盐类，或者碱土金属及其盐类，或者金属配合物。本实施例中，所述电子注入层17所用材料为氟化锂；所述电子注入层17的厚度在0.5nm-10nm，优选为1nm。在实际制备过程中，通过真空蒸镀法将所述电子注入层17所用材料蒸镀在量子点层16上，形成电子注入层17。
所述第二电极18设于所述电子注入层17上。所述第二电极18为透明电极，其作为阴极。所述透明电极所用材料为金属材料或金属合金或金属氧化物，金属氧化物如采用铟锌氧化物。所述第二电极18的功函数小于所述第一电极11的功函数，所述第二电极18的其功函数小于4。本实施例中，所述第二电极18所用材料选择镁银合金。所述第二电极18的厚度为10nm-200nm，优选为20nm。在实际制备过程中，通过真空蒸镀法将所述第二电极18所用材料蒸镀在电子注入层17上，形成第二电极18。
当受到一定能量的光激发后，本实施例中的所述量子点层16可以发出特定频率的荧光，而发光波长会随着量子点层16的尺寸的改变而变化，通过改变所述量子点层16的尺寸和所述量子点层16中的化学组分，使其发射的光谱能够覆盖整个可见光区。量子点材料具有半峰宽非常窄的发射光谱和高的荧光量子效率，可以作为一种良好的光色转换材料。同时相对于有机半导体材料，无机量子点半导体材料具有高的载流子迁移率，从阴极注入的电子可以穿过所述量子点层16及所述电子传输层15，在所述发光层14与从所述阳极注入的空穴复合发光，当光再穿过所述量子点层16时，激发量子点发出更窄的光谱，而量子点极窄的发光光谱不会有微腔效应导致的肩峰增强现象，从而有效提高发光色纯度。
如图2所示，本发明还公开了一种显示装置1，具有所述的有机发光器件10以及阵列基板20。本实施例中，所述有机发光器件10设置在所述阵列基板20上，具体的，所述阵列基板20内具有源漏极，所述第一电极11连接于源漏极上，第一电极11上方具有像素限定层21，所述像素限定层21设有开槽，所述第一电极11裸露在所述开槽中，所述有机发光器件10的其他结构，如空穴注入层12、空穴传输层13、发光层14、电子传输层15、量子点层16、电子注入层17以及第二电极18依次设置在所述开槽中的第一电极11上。
本实施例的显示装置1，其主要设计要点在于有机发光器件10，对于其他器件或结构，如彩膜基板以及阵列基板20的其他结构等等就不再一一赘述。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种有机发光器件，其包括电子传输层、电子注入层以及量子点层，所述量子点层设于所述电子传输层和电子注入层之间。
  2. 根据权利要求1所述的有机发光器件，其中，所述量子点层所用材料为Ⅱ-Ⅵ族化学元素的二元量子点材料，或者为Ⅰ-Ⅱ-Ⅵ族化学元素的三元或以上量子点材料；所述二元量子点材料包括硫化镉、硫化锌、硒化镉、碲化镉中的至少一种；所述三元或以上量子点材料包括硒化锌镉、硫化铜铟、硫化锌铜铟中的至少一种。
  3. 根据权利要求1所述的有机发光器件，其中，所述量子点层的发光颜色为蓝色、绿色、黄色、红色中的一种。
  4. 根据权利要求1所述的有机发光器件，其中，所述量子点层所用材料包括核壳结构的量子点，其为纳米级别的半导体颗粒。
  5. 根据权利要求1所述的有机发光器件，其中，所述量子点层的厚度为1 nm-100 nm。
  6. 根据权利要求1所述的有机发光器件，其中，所述量子点层中还包括具有电子传输性质的掺杂材料。
  7. 根据权利要求1所述的有机发光器件，其还包括
    第一电极；
    空穴注入层，设于所述第一电极上；
    空穴传输层，设于所述空穴注入层上；
    发光层，设于所述空穴传输层上，所述电子传输层设于所述发光层上；以及
    第二电极，设于所述电子注入层上。
  8. 根据权利要求7所述的有机发光器件，其中，所述第一电极为反射电极；所述第二电极为透明电极。
  9. 根据权利要求8所述的有机发光器件，其中，所述透明电极所用材料为金属材料、金属合金、金属氧化物中的至少一种；所述反射电极所用材料为金属材料、金属合金、金属氧化物中的至少一种，所述透明电极的功函数小于反射电极的功函数。
  10.    一种显示装置，其具有如权利要求1所述的有机发光器件。
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