WO2020212438A1 - Procédé de production d'une céramique composite et céramique composite produite avec un tel procédé - Google Patents

Procédé de production d'une céramique composite et céramique composite produite avec un tel procédé Download PDF

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Publication number
WO2020212438A1
WO2020212438A1 PCT/EP2020/060613 EP2020060613W WO2020212438A1 WO 2020212438 A1 WO2020212438 A1 WO 2020212438A1 EP 2020060613 W EP2020060613 W EP 2020060613W WO 2020212438 A1 WO2020212438 A1 WO 2020212438A1
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Prior art keywords
layer
ceramic
composite ceramic
ceramic material
hot pressing
Prior art date
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PCT/EP2020/060613
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German (de)
English (en)
Inventor
Karsten Schmidt
Lei Liu
Xinhe Tang
Yang Zhong
Original Assignee
Rogers Germany Gmbh
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Publication date
Application filed by Rogers Germany Gmbh filed Critical Rogers Germany Gmbh
Priority to EP20719992.8A priority Critical patent/EP3956275A1/fr
Publication of WO2020212438A1 publication Critical patent/WO2020212438A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C04B35/6455—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
    • C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/08—Non-oxidic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates

Definitions

  • the present invention relates to a method for producing a composite ceramic and a composite ceramic produced using such a method.
  • Insulation layers made of ceramics for printed circuit boards are well known from the prior art.
  • metallizations are typically provided on the upper and / or lower side, which serve as conductor tracks or as connection areas for electronic components.
  • the use of AIN is known, for example, in order to effectively dissipate heat generated on the top and / or bottom side in order to avoid damage to the circuit board.
  • AIN material properties which are favorable for heat dissipation, its use as a ceramic material often proves to be disadvantageous because of its reduced strength compared to other ceramics.
  • a first aspect of the present invention relates to a method for producing a composite ceramic comprising
  • the second layer serves in particular as a cover layer for the first layer and the complete and tight covering by means of this cover layer designed as a second layer ensures, for example, that the dielectric strength of the composite ceramic is as high as possible if the second ceramic material is used for a corresponding increase the dielectric strength in the composite ceramic should be provided.
  • a direct, ie direct, connection of the first layer to the second layer, in particular without a solder layer is realized.
  • the ceramic materials, ie the first ceramic material and the second ceramic material are present as the first or second layer during the manufacturing process and, through the hot pressing process, the first layer is formed from the first layer and the second layer from the second layer becomes.
  • a gas pressure and / or a mechanical pressure which acts on the first and second layers in the furnace.
  • a hot pressing method to mean the action of a pressure, for example a gas pressure or a mechanical pressure, which acts on the ensemble of the first layer and the second layer while heat is supplied or heating takes place.
  • the mechanical pressure is carried out by a corresponding Pressvor direction in which the first layer and the second layer are arranged.
  • a mechanical pressure acting on the first layer and the second layer is implemented by means of a pressing device, the first layer and the second layer being arranged in the pressing device.
  • the pressing device allows the desired pressure to be transferred to the ensemble of first layer and second layer during pressing.
  • the pressing device preferably has a protruding contour on its inside which comes into contact with the second layer, and the second layer is at least locally displaced by the protruding contour. It is thereby advantageously possible to implement structuring in the cover layer.
  • it is implemented like a composite ceramic in which the second layer has a modulated thickness or does not cover the first layer in sections.
  • a height profile is specifically implemented on the outside of the composite ceramic. In particular, this creates areas in which, when the metal is globally bound to the composite ceramic, there is no or only a weak local connection. In these areas, the metal is occasionally removed during subsequent structuring, especially during second etching.
  • the first layer is formed in the form of a plate, d. H. forms a solid body which extends along a main extension plane, while the second layer is preferably formed from a powdery or granular or fitted second ceramic material.
  • the hot pressing process preferably understands the hot pressing process to be such a process in which compression is achieved with the simultaneous application of pressure and temperature.
  • a connection to the first layer in particular is realized by means of the hot pressing process.
  • the composite ceramic is realized by the hot pressing process.
  • the prior art knows z. B. uniaxial pressing or isostatic pressing.
  • the composite ceramic is preferably implemented by means of hot isostatic pressing (HIP), known as “hipping”.
  • HIP hot isostatic pressing
  • an arrangement of the first layer and the second layer is enclosed in a deformable container.
  • this deformable container is formed from a latex material and then this is a closed arrangement subjected to a corresponding pressure and a certain temperature. After a certain residence time in the furnace, the composite ceramic is then removed again from the furnace.
  • the second layer is formed both on the upper side and also on the lower side, ie a sandwich structure is formed for the composite ceramics.
  • the first layer is completely encased by the second layer when it is arranged in the oven.
  • the first layer is embedded in the second layer.
  • the second layer preferably has free-flowing granules or powder made from the second ceramic material.
  • the first ceramic material, silicon carbide SiC and / or the second ceramic material is silicon nitrite S13N4.
  • the second layer is applied by means of spin coating.
  • the spin coating process is preferably carried out in a preparatory step before the hot pressing process.
  • rotary coating processes are a process in which a paste made of the second ceramic material is placed on the first layer and centrifugal forces are generated by rotation around an axis of rotation that runs perpendicular to the main plane of extension HSE of the first layer cause the paste to be evenly distributed on top of the first layer.
  • rotation speeds of 1,000 to 4,000 revolutions per minute are used here and the turning or Rotation takes place for approx. 10 to 30 seconds.
  • This rotary coating process is particularly preferably combined with Y2O3, which was added to the paste made from the second ceramic material.
  • the first layer in the manufactured composite ceramic has a first thickness, the ratio of the second thickness to the first thickness being between 0.05 and 0.2, preferably between 0.05 and 0.15 and particularly preferred takes between 0.075 and 0.13.
  • the second layer is used to form a cover layer which encases or surrounds the first layer.
  • the first layer forms a kind of core layer of the composite ceramic and essentially contributes to the properties of the composite ceramic. In particular because of the increased thermal conductivity of silicon carbide, for example, it is advantageous to form a thick first layer in order to be able to transport away as much heat as possible.
  • the hot pressing process is carried out at a temperature between 1,500 and 2,000 ° C., preferably between 1,700 and 2,000 ° C. is particularly preferably carried out between 1,850 and 1,950 ° C. In particular, it is provided that the hot pressing process is carried out at a temperature of 1,900 ° C.
  • the hot pressing process is preferably carried out for more than 4 hours, preferably for more than 6 hours and particularly preferably for more than 8 hours. In particular for dwell times of more than 6 hours, in particular 8 hours, a significant increase in the dielectric strength can be determined compared to composite ceramics that have not been exposed to the hot pressing process for so long.
  • the hot pressing process is carried out in a gas atmosphere, in particular in a nitrogen atmosphere.
  • the hot pressing takes place with the exclusion of oxygen.
  • nitrogen the use of argon is also conceivable.
  • a structured metallization is implemented on the composite ceramic.
  • This allows the composite ceramic in particular to be used as a circuit board.
  • the properties of high dielectric strength and high thermal conductivity have proven to be particularly advantageous for a printed circuit board.
  • the metallization is produced by means of a direct metal connection process and / or an active soldering process. Examples of a direct metal bonding process are a DCB and / or a DAB process.
  • a direct metal connection method such as a “DCB method” (Direct Copper Bond Technology) or DAB method (Direct Aluminum Bond Technology), is understood by the person skilled in the art to be such a method, for example for connecting Metal layers or sheets (e.g. copper sheets or foils) are used with one another and / or with ceramic or ceramic layers, namely using metal or copper sheets or metal or copper foils, which have a layer or a coating (melting layer) on their surface sides.
  • this layer or this coating (melting layer) forms a eutectic with a melting temperature below the melting temperature of the metal (e.g. copper), so that through Laying the film on the ceramic and by heating all layers these can be connected to one another, namely by melting the metal or copper essentially only in the area of the melting layer or oxide layer.
  • an active soldering process e.g. B. for connecting metal layers or Me tallfolien, in particular also of copper layers or copper foils with ceramic material
  • a method is to be understood, which is specifically used for the manufacture of metal-ceramic substrates.
  • a connection between a metal foil, for example a copper foil, and a ceramic substrate, for example aluminum nitride ceramic is produced using a hard solder, which in addition to a main component such as copper, silver and / or gold, also contains an active metal.
  • This active metal which is, for example, at least one element from the group Hf, Ti, Zr, Nb, Ce, establishes a connection between them through a chemical reaction the solder and the ceramic, while the connection between the solder and the metal is a metallic braze joint.
  • Another aspect of the present invention is a composite ceramic manufactured using the method according to the invention. All of the features and advantages described can be applied to composite ceramics and vice versa.
  • Fig. 2 a circuit board with a composite ceramic according to an exemplary embodiment of the present invention.
  • the composite ceramic 10 is a carrier substrate or an insulation layer which represents an essential component of a printed circuit board.
  • the conductor tracks or metal pads for connection. that of electronic components.
  • a composite ceramic 10 or hybrid ceramic is to be understood here in particular as a carrier substrate which, in the manufactured state, has at least a first layer 11 made of the first ceramic material and a second layer 12 made of the second ceramic material.
  • the first layer 11 is directly connected to the second layer 12 and the composite ceramic 10 extends in a main plane of extent HSE.
  • the first layer 11 and the second layer 12 are then arranged one above the other along a stacking direction S running perpendicular to the main extension plane HSE.
  • a first layer 11 and a second layer 12 is provided.
  • the first layer 1 1 is preferably surrounded or sheathed by two second layers 12.
  • the first layer 11 is arranged between two second layers 12 with the formation of a sandwich structure (not shown).
  • the first layer 11 is arranged between a second layer 12 and a third layer (not shown) that is different from the second layer 12. It is particularly preferably provided that the first ceramic material differs from the second ceramic material. This makes it possible in an advantageous manner to combine positive specifications or properties of the first ceramic material and the second ceramic material in the composite ceramic 10.
  • the first ceramic material is silicon carbide SiC and the second ceramic material is silicon nitride S13N4.
  • the first ceramic material z. B. has a comparatively low dielectric strength and a comparatively high thermal conductivity as silicon carbide, it is advantageous By realizing the second layer 12 with the second ceramic material Si silicon nitride S13N4, it is possible to realize a significantly higher dielectric strength for the composite ceramic 10 than would be the case for a pure carrier layer or insulation layer made of silicon carbide.
  • a composite ceramic 10 can be produced which has high dielectric strength and high thermal conductivity.
  • the second layer 12 has a second thickness D2 and the first layer 11 has a first thickness D1, the ratio of the first thickness D1 to the second thickness D2 being between 0.5 and 0.2, preferably between 0.05 and 0.15 and particularly preferably between 0.075 and 0.13.
  • the second layer 12 forms a top coating for the first layer 11 designed as a core layer.
  • a direct metal connection method e.g. B.
  • a DCB or DAB process and / o a metallization 3 is realized on the top OS and / o the bottom US by an active soldering process, which can then be structured by an appropriate etching process so that a circuit board is obtained, on which electronic components or electronic components can be mounted.
  • FIG. 2 shows a method for producing a composite ceramic 10, for example a composite ceramic 10 from FIG. 1.
  • a first layer 31 made of a first ceramic material is provided.
  • the first layer 31 is preferably in the form of a plate or is designed as a solid body which extends along the main plane of extent HSE.
  • the first layer 31 of the first ceramic material is then net angeord in an oven 20.
  • the first layer 31 is arranged in the furnace 20 in such a way that it is at least partially, preferably completely, surrounded by a powdery, paste-like and / or granular second layer 32 made of a second ceramic material.
  • the first layer 31 is in a second layer 32 made of a powder or granules made of the second ceramic material embedded.
  • a composite ceramic 10 is produced by a hot pressing method, preferably a hot isostatic pressing, which has the first layer 11 made of the first ceramic material and the second layer 12 made of the second ceramic material in the manufactured state.
  • a hot isostatic pressing it is then preferably provided that the arrangement of the first layer 31 and second layer 32 is subjected to a pressure of 2.5 to 3.5 MPa at a temperature of about 1900 ° C. for about 8 hours.
  • the hot isostatic pressing takes place in a gas atmosphere 35, which in particular consists of nitrogen.
  • the hot isostatic pressing or the hot pressing process is preferably carried out with the exclusion of oxygen.
  • a second thickness D2 is realized for the second layer 12, which is between 10 and 150 ⁇ m, preferably between 30 and 35 ⁇ m and particularly preferably between 35 and 45 ⁇ m. This enables dielectric strengths of 2.6 to 3 kV for the composite ceramic 10.
  • a second layer 12 with one of the corresponding second thicknesses is formed both on the upper side OS and on the lower side US of the composite ceramic 10. Both second thicknesses D2 are preferably dimensioned to be the same.
  • FIG. 3 shows a method for producing a composite ceramic 10 according to a second preferred embodiment of the present invention.
  • a further second layer 32 'from a silicon nitride paste in a preparatory step by means of a rotary coating.
  • the silicon nitride paste is applied to the first layer 31 of silicon carbide and the silicon carbide layer is driven to rotate about an axis of rotation R. At around 1,000 to 4,000 revolutions per minute for 10 to 40 seconds, it is ensured that the resulting from the rotation Centrifugal forces the paste is evenly distributed on the top OS of the first layer 31, in particular the first layer 31 made of silicon carbide.
  • the first layer 31, on which the second layer 32 was applied as paste by means of the spin coating process is embedded in the furnace 20 and additionally surrounded by the second layer 32 made of the second ceramic material, in particular completely encased or in the powder or Granules embedded.
  • the hot pressing process is then carried out as described above.
  • FIG. 4 various examples of composite ceramics are shown, which were produced using one of the methods from FIGS. 2 or 3.
  • the parameters for the hot pressing process or the hot pressing process can be found in column B.
  • Essential parameters of the hot pressing process are the temperature used and the length of time in the furnace while the hot pressing process is carried out.
  • the parameters for the spin coating are entered.
  • Essential parameters for the Rotationsbe coating process are the number of revolutions per minute and the duration of the implementation of the rotary coating process.
  • the second thickness D2 i.e. H. the second thickness D2 of the second layer 12 in the manufactured composite ceramic 10 is indicated. This is between 20 and 100 pm.
  • Column C shows the dielectric strength of the composite ceramic 10.
  • the table shows that particularly high dielectric strengths of up to three kV can be achieved if a rotation coating process with 1,000 revolutions per minute is used for at least 10 seconds in a subsequent Hot-pressing process, the arrangement of the first layer 31 and second layer 32 is exposed to a temperature of 1,900 ° C. for about 8 hours. This means that layer thicknesses between 35 and 40 ⁇ m and dielectric strengths between 2 and 3 kV can be achieved.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Products (AREA)

Abstract

La présente invention concerne un procédé de production d'une céramique composite (10) comprenant - la fourniture d'une première couche (31) d'un premier matériau céramique, - l'agencement de la première couche (32) dans un four (20), la première couche (31) dans le four (20) étant au moins partiellement composée d'un matériau pulvérulent ou pâteux, une seconde couche (32) d'un second matériau céramique, et - la réalisation d'un processus de pressage à chaud pour former la céramique composite (10) comprenant, à l'état fini, une première couche (11) du premier matériau céramique et une seconde couche (12) du second matériau céramique.
PCT/EP2020/060613 2019-04-17 2020-04-15 Procédé de production d'une céramique composite et céramique composite produite avec un tel procédé WO2020212438A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP20719992.8A EP3956275A1 (fr) 2019-04-17 2020-04-15 Procédé de production d'une céramique composite et céramique composite produite avec un tel procédé

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DE102019110106.9 2019-04-17
DE102019110106.9A DE102019110106A1 (de) 2019-04-17 2019-04-17 Verfahren zur Herstellung einer Verbundkeramik und Verbundkeramik hergestellt mit einem solchen Verfahren

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US640039A (en) 1899-03-18 1899-12-26 Cleveland Pneumatic Tool Co Pneumatic drill.
US3744120A (en) 1972-04-20 1973-07-10 Gen Electric Direct bonding of metals with a metal-gas eutectic
DE2319854C2 (de) 1972-04-20 1983-12-29 General Electric Co., Schenectady, N.Y. Verfahren zum direkten Verbinden eines Metallteiles mit einem aus nichtmetallischem Material bestehenden Substraten
DE112010004589T5 (de) * 2009-11-27 2013-01-24 Showa Denko K.K. Laminat und Herstellungsverfahren hierfür
DE102014106694B3 (de) * 2014-05-13 2015-04-02 Rogers Germany Gmbh Verfahren zur Metallisierung zumindest eines plattenförmigen Keramiksubstrates sowie Metall-Keramik-Substrat

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3714240C1 (de) * 1987-04-29 1988-07-21 Feldmuehle Ag Sinterformkoerper aus Siliciumnitrid mit einer aeusseren keramischen Nutzschicht auf der Basis von Aluminiumnitrid
JP3593707B2 (ja) * 1993-03-19 2004-11-24 住友電気工業株式会社 窒化アルミニウムセラミックスとその製造方法
SG120941A1 (en) * 2003-07-03 2006-04-26 Agency Science Tech & Res Double-layer metal sheet and method of fabricatingthe same
US9799601B1 (en) * 2017-02-06 2017-10-24 Vanguard International Semiconductor Corporation Fuse elements and methods for forming the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US640039A (en) 1899-03-18 1899-12-26 Cleveland Pneumatic Tool Co Pneumatic drill.
US3744120A (en) 1972-04-20 1973-07-10 Gen Electric Direct bonding of metals with a metal-gas eutectic
DE2319854C2 (de) 1972-04-20 1983-12-29 General Electric Co., Schenectady, N.Y. Verfahren zum direkten Verbinden eines Metallteiles mit einem aus nichtmetallischem Material bestehenden Substraten
DE112010004589T5 (de) * 2009-11-27 2013-01-24 Showa Denko K.K. Laminat und Herstellungsverfahren hierfür
DE102014106694B3 (de) * 2014-05-13 2015-04-02 Rogers Germany Gmbh Verfahren zur Metallisierung zumindest eines plattenförmigen Keramiksubstrates sowie Metall-Keramik-Substrat

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
D.C PENDER ET AL: "Gradients in elastic modulus for improved contact-damage resistance. part ii: the silicon nitride-silicon carbide system", ACTA MATERIALIA., vol. 49, no. 16, September 2001 (2001-09-01), GB, pages 3263 - 3268, XP055709727, ISSN: 1359-6454, DOI: 10.1016/S1359-6454(01)00201-4 *

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