WO2020211155A1 - 双面白光有机发光二极管显示装置及其制造方法 - Google Patents

双面白光有机发光二极管显示装置及其制造方法 Download PDF

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WO2020211155A1
WO2020211155A1 PCT/CN2019/088273 CN2019088273W WO2020211155A1 WO 2020211155 A1 WO2020211155 A1 WO 2020211155A1 CN 2019088273 W CN2019088273 W CN 2019088273W WO 2020211155 A1 WO2020211155 A1 WO 2020211155A1
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light emitting
layer
color
light
emitting layer
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PCT/CN2019/088273
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English (en)
French (fr)
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吴元均
吕伯彦
袁伟
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020211155A1 publication Critical patent/WO2020211155A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present invention relates to the field of display technology, in particular to a double-sided white light organic light emitting diode display device and a manufacturing method thereof.
  • OLED display devices have the advantages of self-luminescence, simple structure, light and thin, fast response speed, wide viewing angle, low power consumption, and flexible display. Therefore, OLED display devices have been popular among people in recent years. attention.
  • the OLED device used for display is one of the important components in the OLED display device.
  • the color display of the OLED device is mainly realized by the following two methods.
  • One method is to use a fine metal mask (Fine Metal Mask, FMM) is used to prepare an OLED device with three sub-pixels of red, green and blue, but this method is limited by FMM, resulting in low resolution.
  • Another method is to realize color display through the combination of white light and color film layer.
  • the method of the organic light emitting diode (WOLED) display device is not limited by the fine metal mask, but the display device has the disadvantages of low color gamut, low energy utilization, and high power consumption.
  • the purpose of the present invention is to provide a double-sided white light organic light emitting diode display device and a manufacturing method thereof to solve the technical problems of low color gamut, low energy utilization rate, and high power consumption in the prior art.
  • the present invention provides a double-sided white light organic light emitting diode display device, which includes:
  • a first color film layer disposed under the light-emitting layer of the white light organic light-emitting diode, the first color film layer having red color resistance, green color resistance and blue color resistance;
  • a first quantum dot photoluminescent film is arranged between the white light organic light-emitting diode light-emitting layer and the first color film layer, and the first quantum dot photoluminescence film has the same structure as the first color film layer A first conversion part corresponding to the red color resist of and converting blue light into red light and a second conversion part corresponding to the green color resist of the first color film layer and converting blue light into green light;
  • a second quantum dot photoluminescent film is disposed between the white light organic light-emitting diode light-emitting layer and the second color film layer, and the second quantum dot photoluminescence film is connected to the second color film layer
  • a pixel defining layer is disposed between the first quantum dot photoluminescence film and the second color film layer, the pixel defining layer has an upward opening, the white light organic light emitting diode light emitting layer and The second quantum dot photoluminescent film is located in the opening;
  • the light emitting layer of the white light organic light emitting diode has a laminated structure, and the laminated structure is selected from one of the following multilayer combinations: a blue light emitting layer and a yellow light emitting layer; a blue light emitting layer and a red light emitting layer and a yellow light emitting layer. Light emitting layer; blue light emitting layer, red light emitting layer, yellow light emitting layer and green light emitting layer; and blue light emitting layer, red light emitting layer and green light emitting layer.
  • the first quantum dot photoluminescence film and the second quantum dot photoluminescence film are quantum dot enhanced films.
  • the double-sided white light organic light emitting diode display device further includes a substrate, the substrate is a rigid substrate or a flexible substrate, the white light organic light emitting diode light emitting layer, the The first color film layer, the first quantum dot photoluminescence film, the second color film layer and the second quantum dot photoluminescence film are arranged on the substrate.
  • the material of the rigid substrate is glass
  • the material of the flexible substrate is polyimide
  • the present invention also provides a double-sided white light organic light emitting diode display device, which includes:
  • a first color film layer disposed under the light-emitting layer of the white light organic light-emitting diode, the first color film layer having red color resistance, green color resistance and blue color resistance;
  • a first quantum dot photoluminescent film is arranged between the white light organic light-emitting diode light-emitting layer and the first color film layer, and the first quantum dot photoluminescence film has the same structure as the first color film layer A first conversion part corresponding to the red color resist of and converting blue light into red light and a second conversion part corresponding to the green color resist of the first color film layer and converting blue light into green light;
  • a second quantum dot photoluminescent film is disposed between the white light organic light-emitting diode light-emitting layer and the second color film layer, and the second quantum dot photoluminescence film is connected to the second color film layer
  • a pixel defining layer is disposed between the first quantum dot photoluminescence film and the second color film layer, the pixel defining layer has an upward opening, the white light organic light emitting diode light emitting layer and The second quantum dot photoluminescence film is located in the opening.
  • the white light organic light emitting diode light emitting layer has a laminated structure, and the laminated structure is selected from one of the following multilayer combinations: blue light emitting layer and yellow light emitting layer Layers; blue light emitting layer, red light emitting layer and yellow light emitting layer; blue light emitting layer, red light emitting layer, yellow light emitting layer and green light emitting layer; and blue light emitting layer, red light emitting layer and green light emitting layer.
  • the first quantum dot photoluminescence film and the second quantum dot photoluminescence film are quantum dot enhanced films.
  • the double-sided white light organic light emitting diode display device further includes a substrate, the substrate is a rigid substrate or a flexible substrate, the white light organic light emitting diode light emitting layer, the The first color film layer, the first quantum dot photoluminescence film, the second color film layer and the second quantum dot photoluminescence film are arranged on the substrate.
  • the material of the rigid substrate is glass
  • the material of the flexible substrate is polyimide
  • the present invention also provides a method for manufacturing a double-sided white light organic light emitting diode display device, which includes the following steps:
  • first color filter layer Forming a first color filter layer on the substrate, the first color filter layer having red color resistance, green color resistance and blue color resistance;
  • a first quantum dot photoluminescent film is formed on the first color film layer.
  • the first quantum dot photoluminescence film has a red color resist corresponding to the first color film layer and converts blue light into red A first conversion part of light and a second conversion part corresponding to the green color resist of the first color film layer and converting blue light into green light;
  • a second color filter layer is formed on the transparent cover plate.
  • the second color filter layer has red color resistance, green color resistance, and blue color resistance
  • the second quantum dot photoluminescent film has A third conversion part corresponding to the red color resistance of the second color film layer and converting blue light into red light and a fourth conversion part corresponding to the green color resistance of the second color film layer and converting blue light into green light;
  • the substrate and the transparent cover plate are bonded together so that the second color filter layer is opposite to the second quantum dot photoluminescent film.
  • the white light organic light emitting diode light emitting layer has a laminated structure, and the laminated structure is selected from one of the following multilayer combinations: a blue light emitting layer and Yellow light emitting layer; blue light emitting layer and red light emitting layer and yellow light emitting layer; blue light emitting layer and red light emitting layer and yellow light emitting layer and green light emitting layer; and blue light emitting layer and red light emitting layer and green light Luminescent layer.
  • the first quantum dot photoluminescent film and the second quantum dot photoluminescent film are formed by inkjet printing or transfer, so The first quantum dot photoluminescence film and the second quantum dot photoluminescence film are quantum dot enhanced films.
  • the substrate is a rigid substrate or a flexible substrate
  • the material of the rigid substrate is glass
  • the material of the flexible substrate is polyimide
  • the material of the transparent cover plate is glass.
  • the present invention provides a double-sided white light organic light emitting diode display device and a manufacturing method thereof.
  • the quantum dot photoluminescence film By arranging the quantum dot photoluminescence film between the white light organic light emitting diode light-emitting layer and the color film layer, the quantum dot photoluminescence film has a conversion that corresponds to the red color resistance of the color film layer and converts blue light into red light. Part and the conversion part corresponding to the green color resistance of the color film layer and converting blue light into green light, the present invention can solve the technical problems of low color gamut, low energy utilization rate, and high power consumption in the prior art.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a double-sided white light organic light emitting diode display device according to the present invention.
  • FIG. 2 shows a cross-sectional view of a double-sided white light organic light emitting diode display device manufactured according to the first embodiment of the present invention.
  • FIG. 3 shows a cross-sectional view of a double-sided white light organic light emitting diode display device manufactured according to a second embodiment of the invention.
  • FIG. 1 is a schematic cross-sectional structure diagram of a double-sided white organic light emitting diode (WOLED) display device 1000 according to the present invention.
  • WOLED white organic light emitting diode
  • the present invention provides a double-sided white light organic light emitting diode display device 1000, which includes:
  • a white light organic light emitting diode light emitting layer 100 A white light organic light emitting diode light emitting layer 100;
  • a first color film layer 200 is disposed under the white light organic light emitting diode light-emitting layer 100, and the first color film layer 200 has a red color resist 210, a green color resist 220, and a blue color resist 230;
  • a first quantum dot photoluminescence film (first QD-PL Film) 300 is disposed between the white light organic light emitting diode light-emitting layer 100 and the first color film layer 200.
  • a quantum dot photoluminescent film 300 has a first conversion portion 310 corresponding to the red color resistance of the first color film layer 200 and converting blue light into red light, and a first conversion portion 310 corresponding to the green color resistance of the first color film layer And the second conversion part 320 that converts blue light into green light;
  • a second quantum dot photoluminescence film (second QD-PL Film) 500 is arranged between the white light organic light emitting diode light-emitting layer 100 and the second color film layer 400, and the first
  • the second quantum dot photoluminescent film 500 has a third conversion part 510 that corresponds to the red color resistance of the second color film layer 400 and converts blue light into red light, and corresponds to the green color resistance of the second color film layer
  • the fourth conversion part 520 that converts blue light into green light.
  • the thin film transistor (TFT) 150 is used to control the light emission of the white light organic light emitting diode light emitting layer 100.
  • the first quantum dot photoluminescence film 300 and the second quantum dot photoluminescence film 500 are quantum dot enhancement films (QD-EF).
  • the material for converting blue light into red light can be red quantum dot materials such as Cd x Zn 1-x S, Cd x Zn 1-x Se, InP, Ga x In 1-x P, etc.
  • the material for converting blue light into green light can be green quantum dot materials such as Cd x Zn 1-x S, Cd x Zn 1-x Se, InP, and GaxIn 1-x P.
  • the double-sided white light organic light emitting diode display device 1000 further includes a substrate 700 which is a rigid substrate or a flexible substrate.
  • the material of the rigid substrate may be glass.
  • the material of the flexible substrate may be polyimide.
  • the white light organic light-emitting diode light-emitting layer 100, the first color film layer 200, the first quantum dot photoluminescent film 300, the second color film layer 400, and the second quantum dot photoluminescent film 500 is provided on the substrate.
  • the light emitting layer 100 of the white light organic light emitting diode has a laminated structure.
  • FIG. 1 shows that the light emitting layer 100 of the white light organic light emitting diode has a three-layer structure.
  • the laminated structure is selected from one of the following multilayer combinations: blue light emitting layer and yellow light emitting layer; blue light emitting layer, red light emitting layer and yellow light emitting layer; blue light emitting layer, red light emitting layer and yellow light emitting layer Layer and green light emitting layer; and blue light emitting layer, red light emitting layer and green light emitting layer.
  • the double-sided white organic light emitting diode display device 1000 further includes a pixel defining layer 850 (see FIGS. 2 and 3).
  • the pixel defining layer 850 is used to define a pixel area, and the pixel defining layer 850 is disposed on the first quantum dot.
  • the pixel defining layer 850 has an upward opening 851, and the white light organic light emitting diode light emitting layer 100 and the second quantum dot photoluminescence
  • the membrane 500 is located in the opening 851.
  • the double-sided white light organic light emitting diode display device 1000 further includes a transparent cover 800 arranged on the second color film layer 400, and the material of the transparent cover 800 may be glass to allow red light R, green light G, and blue light B , White light W passes through.
  • the double-sided white light organic light emitting diode display device 1000 further includes an upper polarizer 910 and a lower polarizer 920 which are respectively disposed on the outside.
  • the first quantum dot photoluminescent film 300 has a first conversion part 310 corresponding to the red color resistance of the first color film layer 200 and converting blue light into red light, and a green color resistance corresponding to the first color film layer.
  • the second quantum dot photoluminescent film 500 has a third conversion part 510 that corresponds to the red color resistance of the second color film layer 400 and converts blue light into red light
  • the fourth conversion part 520 corresponding to the green color resistance of the second color film layer and converting blue light into green light.
  • the white light organic light emitting diode light-emitting layer 100 emits light, the intensities of the red light R and the green light G are increased, and the intensities of the blue light B and white light W will not change, so that the display device 1000 has a high color gamut and high energy utilization. .
  • FIGS. 2 and 3 show cross-sectional views of a double-sided white light organic light emitting diode display device manufactured according to the first embodiment and the second embodiment of the present invention, respectively.
  • the structural design shown in FIG. 1 of the present disclosure can be applied to the display of thin film transistor (TFT) 150 with a bottom gate structure (as shown in FIG. 2) or a top gate structure (as shown in FIG. 3).
  • the thin film transistor 150 of FIGS. 2 and 3 both include a gate 10, a source 20, a drain 30, and a channel 50.
  • the structure of FIG. 3 further includes a shield line 40, and the shield line 40 is disposed on the substrate 700.
  • the WOLED device includes a first electrode 50, a white light organic light emitting diode light emitting layer 100 and a second electrode 60.
  • a black matrix 70 is provided on the transparent cover 800.
  • a pixel defining layer 850 is disposed between the first quantum dot photoluminescence film 300 and the second color filter layer 400, the pixel defining layer 850 has an upward opening 851, and the white light organic The light emitting diode light emitting layer 100 and the second quantum dot photoluminescent film 500 are located in the opening 851.
  • the ones shown in FIGS. 2 and 3 are the red pixel regions.
  • the light emitted from the light emitting layer 100 of the white light organic light emitting diode is converted by the first conversion part 310 of the first quantum dot photoluminescence film 300 and the third conversion part 510 of the second quantum dot photoluminescence film 500 ,
  • the emitted light 7000 is red light.
  • the present invention also provides a method for manufacturing a double-sided white organic light emitting diode (WOLED) display device 1000, which includes the following steps:
  • first color filter layer 200 Forming a first color filter layer 200 on the substrate 700, the first color filter layer 200 having a red color resist 210, a green color resist 220, and a blue color resist 230;
  • a first quantum dot photoluminescence film (first QD-PL Film) 300 is formed on the first color film layer 200, and the first quantum dot photoluminescence film 300 has The red color resist 210 of the first color film layer 200 corresponds to the first conversion portion 310 that converts blue light into red light, and the first conversion portion 310 that corresponds to the green color resist 220 of the first color film layer 200 and converts blue light into green light.
  • a second color film layer 400 is formed on the transparent cover 800.
  • the second color film 400 has a red color resist 410, a green color resist 420, and a blue color resist 430, wherein the second quantum dot photoresist
  • the light emitting film 500 has a third conversion portion 510 corresponding to the red color resist 410 of the second color film layer 400 and converting blue light into red light, and a third conversion portion 510 corresponding to the green color resist 420 of the second color film layer 400 and The fourth conversion part 520 for converting blue light into green light; and
  • the substrate 700 and the transparent cover 800 are bonded together so that the second color filter layer 400 is opposite to the second quantum dot photoluminescent film 500.
  • the first color film layer 200, the first quantum dot photoluminescence film 300, the white light organic light emitting diode light emitting layer 100, the second quantum dot photoluminescence film 500, and the second color film layer 400 is formed such that its positions correspond to each other to realize color display.
  • the method of manufacturing the double-sided white light organic light emitting diode display device 1000 further includes forming a passivation layer 65 between the second electrode 60 and the second quantum dot photoluminescence film 500.
  • the substrate 700 is a rigid substrate or a flexible substrate.
  • the material of the rigid substrate may be glass.
  • the material of the flexible substrate may be polyimide.
  • the material of the transparent cover 800 may be glass, so that the light 7000 can pass through.
  • the white light organic light emitting diode light emitting layer 100 has a laminated structure, and the laminated structure is selected from one of the following multilayer combinations: a blue light emitting layer and a yellow light emitting layer; a blue light emitting layer, a red light emitting layer and a yellow light Light emitting layer; blue light emitting layer, red light emitting layer, yellow light emitting layer and green light emitting layer; and blue light emitting layer, red light emitting layer and green light emitting layer.
  • the first quantum dot photoluminescent film 300 and the second quantum dot photoluminescent film 500 are formed by inkjet printing or transfer printing.
  • the first quantum dot photoluminescence film 300 and the second quantum dot photoluminescence film 500 are quantum dot enhancement films (QD-EF).
  • the present invention provides a double-sided white light organic light emitting diode display device and a manufacturing method thereof.
  • the quantum dot photoluminescence film By arranging the quantum dot photoluminescence film between the white light organic light emitting diode light-emitting layer and the color film layer, the quantum dot photoluminescence film has a conversion that corresponds to the red color resistance of the color film layer and converts blue light into red light. Part and the conversion part corresponding to the green color resistance of the color film layer and converting blue light into green light, the present invention can solve the technical problems of low color gamut, low energy utilization rate, and high power consumption in the prior art.

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Abstract

一种双面白光有机发光二极管显示装置及其制造方法。通过将量子点光致发光膜（300，500）设置在白光有机发光二极管发光层（100）与彩膜层（200，400）之间，所述量子点光致发光膜（300，500）具有与彩膜层（200，400）的红色色阻（210，410）对应且将蓝光转换为红光的转换部分（310，510）及与彩膜层（200，400）的绿色色阻（220，420）对应且将蓝光转化为绿光的转换部分（320，520），可以解决现有技术中色域低、能量利用率低、功耗高的技术问题。

Description

双面白光有机发光二极管显示装置及其制造方法 技术领域
本发明涉及显示技术领域，特别涉及一种双面白光有机发光二极管显示装置及其制造方法。
 背景技术
有机发光二极管(organic light emitting diode，OLED)显示装置具有自发光、结构简单、轻薄、响应速度快、视角宽、功耗低及可实现柔性显示等优势，因此OLED显示装置近几年受到人们的关注。
用于显示的OLED器件是OLED显示装置中重要组件之一。现有技术中，OLED器件的彩色显示主要通过以下两种方法来实现。一种方法是通过使用精细金属掩膜板(Fine Metal Mask，FMM)来制备具有红绿蓝三个子像素的OLED器件，但该方法受到FMM的限制，导致分辨率低。另一种方法是通过白光和彩膜层的结合来实现彩色显示，这种制作白光有机发光二极管(white organic light emitting diode，WOLED)显示装置的方法不会受到精细金属掩膜板的限制，但显示装置具有色域低、能量利用率低、功耗高的缺点。
因此，有必要提供一种双面白光有机发光二极管显示装置及其制造方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种双面白光有机发光二极管显示装置及其制造方法，以解决现有技术中色域低、能量利用率低、功耗高的技术问题。
 技术解决方案
为解决上述技术问题，本发明提供一种双面白光有机发光二极管显示装置，包括：
一白光有机发光二极管发光层；
一第一彩膜层，设置在所述白光有机发光二极管发光层下方，所述第一彩膜层具有红色色阻、绿色色阻及蓝色色阻；
一第一量子点光致发光膜，设置在所述白光有机发光二极管发光层与所述第一彩膜层之间，所述第一量子点光致发光膜具有与所述第一彩膜层的红色色阻对应且将蓝光转换为红光的第一转换部分及与所述第一彩膜层的绿色色阻对应且将蓝光转化为绿光的第二转换部分；
一第二彩膜层，设置在所述白光有机发光二极管发光层上方，所述第二彩膜层具有红色色阻、绿色色阻及蓝色色阻；及
一第二量子点光致发光膜，设置在所述白光有机发光二极管发光层与所述第二彩膜层之间，所述第二量子点光致发光膜具有与所述第二彩膜层的红色色阻对应且将蓝光转换为红光的第三转换部分及与所述第二彩膜层的绿色色阻对应且将蓝光转化为绿光的第四转换部分；
其中，一像素限定层设置在所述第一量子点光致发光膜与所述第二彩膜层之间，所述像素限定层具有一朝上的开口，所述白光有机发光二极管发光层和所述第二量子点光致发光膜位在所述开口中；
其中，所述白光有机发光二极管发光层具有一叠层结构，所述叠层结构选自以下多层组合其中之一：蓝光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层与绿光发光层；及蓝光发光层与红光发光层与绿光发光层。
在本发明的双面白光有机发光二极管显示装置中，所述第一量子点光致发光膜与所述第二量子点光致发光膜是量子点增强薄膜。
在本发明的双面白光有机发光二极管显示装置中，所述双面白光有机发光二极管显示装置更包括一基板，所述基板是刚性基板或柔性基板，所述白光有机发光二极管发光层、所述第一彩膜层、所述第一量子点光致发光膜、所述第二彩膜层及所述第二量子点光致发光膜设置在所述基板上。
在本发明的双面白光有机发光二极管显示装置中，所述刚性基板的材质为玻璃，所述柔性基板的材质为聚酰亚胺。
本发明还提供一种双面白光有机发光二极管显示装置，包括：
一白光有机发光二极管发光层；
一第一彩膜层，设置在所述白光有机发光二极管发光层下方，所述第一彩膜层具有红色色阻、绿色色阻及蓝色色阻；
一第一量子点光致发光膜，设置在所述白光有机发光二极管发光层与所述第一彩膜层之间，所述第一量子点光致发光膜具有与所述第一彩膜层的红色色阻对应且将蓝光转换为红光的第一转换部分及与所述第一彩膜层的绿色色阻对应且将蓝光转化为绿光的第二转换部分；
一第二彩膜层，设置在所述白光有机发光二极管发光层上方，所述第二彩膜层具有红色色阻、绿色色阻及蓝色色阻；及
一第二量子点光致发光膜，设置在所述白光有机发光二极管发光层与所述第二彩膜层之间，所述第二量子点光致发光膜具有与所述第二彩膜层的红色色阻对应且将蓝光转换为红光的第三转换部分及与所述第二彩膜层的绿色色阻对应且将蓝光转化为绿光的第四转换部分；
其中，一像素限定层设置在所述第一量子点光致发光膜与所述第二彩膜层之间，所述像素限定层具有一朝上的开口，所述白光有机发光二极管发光层和所述第二量子点光致发光膜位在所述开口中。
在本发明的双面白光有机发光二极管显示装置中，所述白光有机发光二极管发光层具有一叠层结构，所述叠层结构选自以下多层组合其中之一：蓝光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层与绿光发光层；及蓝光发光层与红光发光层与绿光发光层。
在本发明的双面白光有机发光二极管显示装置中，所述第一量子点光致发光膜与所述第二量子点光致发光膜是量子点增强薄膜。
在本发明的双面白光有机发光二极管显示装置中，所述双面白光有机发光二极管显示装置更包括一基板，所述基板是刚性基板或柔性基板，所述白光有机发光二极管发光层、所述第一彩膜层、所述第一量子点光致发光膜、所述第二彩膜层及所述第二量子点光致发光膜设置在所述基板上。
在本发明的双面白光有机发光二极管显示装置中，所述刚性基板的材质为玻璃，所述柔性基板的材质为聚酰亚胺。
本发明还提供一种制造双面白光有机发光二极管显示装置的方法，包括以下步骤：
提供一基板；
形成一第一彩膜层于所述基板上，所述第一彩膜层具有红色色阻、绿色色阻及蓝色色阻；
形成一第一量子点光致发光膜于所述第一彩膜层上，所述第一量子点光致发光膜具有与所述第一彩膜层的红色色阻对应且将蓝光转换为红光的第一转换部分及与所述第一彩膜层的绿色色阻对应且将蓝光转化为绿光的第二转换部分；
形成一像素限定层于所述第一量子点光致发光膜上，所述像素限定层具有一开口；
形成一白光有机发光二极管发光层于所述开口中；
形成一第二量子点光致发光膜于所述开口中，所述第二量子点光致发光膜设置在所述白光有机发光二极管发光层上；
提供一透明盖板；
形成一第二彩膜层于所述透明盖板上，所述第二彩膜层具有红色色阻、绿色色阻及蓝色色阻，其中所述第二量子点光致发光膜具有与所述第二彩膜层的红色色阻对应且将蓝光转换为红光的第三转换部分及与所述第二彩膜层的绿色色阻对应且将蓝光转化为绿光的第四转换部分；及
将所述基板与所述透明盖板进行贴合，使得所述第二彩膜层与所述第二量子点光致发光膜相对。
在本发明的制造双面白光有机发光二极管显示装置的方法中，所述白光有机发光二极管发光层具有一叠层结构，所述叠层结构选自以下多层组合其中之一：蓝光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层与绿光发光层；及蓝光发光层与红光发光层与绿光发光层。
在本发明的制造双面白光有机发光二极管显示装置的方法中，所述第一量子点光致发光膜与所述第二量子点光致发光膜是以喷墨打印或转印形成的，所述第一量子点光致发光膜与所述第二量子点光致发光膜是量子点增强薄膜。
在本发明的制造双面白光有机发光二极管显示装置的方法中，所述基板是刚性基板或柔性基板，所述刚性基板的材质为玻璃，所述柔性基板的材质为聚酰亚胺。
在本发明的制造双面白光有机发光二极管显示装置的方法中，所述透明盖板的材质为玻璃。
 有益效果
相较于现有技术，本发明提出一种双面白光有机发光二极管显示装置及其制造方法。通过将量子点光致发光膜设置在白光有机发光二极管发光层与彩膜层之间，所述量子点光致发光膜具有与彩膜层的红色色阻对应且将蓝光转换为红光的转换部分及与彩膜层的绿色色阻对应且将蓝光转化为绿光的转换部分，本发明可以解决现有技术中色域低、能量利用率低、功耗高的技术问题。
 附图说明
图1为根据本发明的一种双面白光有机发光二极管显示装置的剖面结构示意图。
图2显示根据本发明第一实施例所制作的一种双面白光有机发光二极管显示装置的剖视图。
图3显示根据本发明第二实施例所制作的一种双面白光有机发光二极管显示装置的剖视图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图1，图1为根据本发明所的一种双面白光有机发光二极管(white organic light emitting diode，WOLED)显示装置1000的剖面结构示意图。
如图1所示，本发明提供一种双面白光有机发光二极管显示装置1000，包括：
一白光有机发光二极管发光层100；
一第一彩膜层200，设置在所述白光有机发光二极管发光层100下方，所述第一彩膜层200具有红色色阻210、绿色色阻220及蓝色色阻230；
一第一量子点光致发光膜(first quantum dot photoluminescence film，first QD-PL Film)300，设置在所述白光有机发光二极管发光层100与所述第一彩膜层200之间，所述第一量子点光致发光膜300具有与所述第一彩膜层200的红色色阻对应且将蓝光转换为红光的第一转换部分310及与所述第一彩膜层的绿色色阻对应且将蓝光转化为绿光的第二转换部分320；
一第二彩膜层400，设置在所述白光有机发光二极管发光层100上方，所述第二彩膜层400具有红色色阻410、绿色色阻420及蓝色色阻430；及
一第二量子点光致发光膜(second quantum dot photoluminescence film，second QD-PL Film)500，设置在所述白光有机发光二极管发光层100与所述第二彩膜层400之间，所述第二量子点光致发光膜500具有与所述第二彩膜层400的红色色阻对应且将蓝光转换为红光的第三转换部分510及与所述第二彩膜层的绿色色阻对应且将蓝光转化为绿光的第四转换部分520。
薄膜晶体管(thin film transistor，TFT)150用以控制所述白光有机发光二极管发光层100的发光。
所述第一量子点光致发光膜300与所述第二量子点光致发光膜500是量子点增强薄膜(quantum dot enhancement film， QD-EF)。
将蓝光转换成红光的材料的材质可以为Cd xZn 1-xS、Cd xZn 1-xSe、InP、Ga xIn 1-xP等红色量子点材料。将蓝光转化为绿光的材料的材质可以为Cd xZn 1-x S、Cd xZn 1-xSe、InP、GaxIn 1-xP等绿色量子点材料。
所述双面白光有机发光二极管显示装置1000更包括一基板700，所述基板700是刚性基板或柔性基板。所述刚性基板的材质可以为玻璃。所述柔性基板的材质可以为聚酰亚胺。所述白光有机发光二极管发光层100、所述第一彩膜层200、所述第一量子点光致发光膜300、所述第二彩膜层400及所述第二量子点光致发光膜500设置在所述基板上。
优选地，所述白光有机发光二极管发光层100具有一叠层结构。例如，图1显示所述白光有机发光二极管发光层100为三层的结构。所述叠层结构选自以下多层组合其中之一：蓝光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层与绿光发光层；及蓝光发光层与红光发光层与绿光发光层。
双面白光有机发光二极管显示装置1000还包括一像素限定层850(见图2和3)，所述像素限定层850用以限定像素区域，所述像素限定层850设置在所述第一量子点光致发光膜300与所述第二彩膜层400之间，所述像素限定层850具有一朝上的开口851，所述白光有机发光二极管发光层100和所述第二量子点光致发光膜500位在所述开口851中。
双面白光有机发光二极管显示装置1000还包括设置在第二彩膜层400上的透明盖板800，所述透明盖板800的材质可以为玻璃，以允许红光R、绿光G、蓝光B、白光W透过。
双面白光有机发光二极管显示装置1000还包括分别设置在外侧的上偏光片910和下偏光片920。
根据本发明，第一量子点光致发光膜300具有与第一彩膜层200的红色色阻对应且将蓝光转换为红光的第一转换部分310及与第一彩膜层的绿色色阻对应且将蓝光转化为绿光的第二转换部分320，第二量子点光致发光膜500具有与第二彩膜层400的红色色阻对应且将蓝光转换为红光的第三转换部分510及与第二彩膜层的绿色色阻对应且将蓝光转化为绿光的第四转换部分520。因此，当白光有机发光二极管发光层100放射光时，红光R与绿光G的强度得以增加，蓝光B与白光W的强度不会改变，使得显示装置1000具有高色域、高能量利用率。
请参考图2和图3，其分别显示根据本发明第一实施例和第二实施例所制作的一种双面白光有机发光二极管显示装置的剖视图。本揭示图1中所示的结构设计可以应用在具有底闸型结构(如图2所示)或顶闸型结构(如图3所示)的薄膜晶体管(thin film transistor，TFT)150的显示装置1000中。图2和图3的薄膜晶体管150均包括栅极10、源极20、漏极30及通道50。图3的结构更包括一遮蔽线40，遮蔽线40设置在基板700上。WOLED器件包括第一电极50、白光有机发光二极管发光层100及第二电极60。一黑矩阵(black matrix)70设置在透明盖板800上。
其中，一像素限定层850设置在所述第一量子点光致发光膜300与所述第二彩膜层400之间，所述像素限定层850具有一朝上的开口851，所述白光有机发光二极管发光层100和所述第二量子点光致发光膜500位在所述开口851中。
举例说明，以图2和图3中显示的第一彩膜层200为红色色阻及第二彩膜层400为红色色阻为例，则图2和图3所显示者即为红色像素区域的结构，从白光有机发光二极管发光层100放射的光，在被第一量子点光致发光膜300的第一转换部分310与第二量子点光致发光膜500的第三转换部分510转换后，所发出的光7000即为红光。
本发明还提供一种制造双面白光有机发光二极管(white organic light emitting diode，WOLED)显示装置1000的方法，包括以下步骤：
提供一基板700；
形成一第一彩膜层200于所述基板700上，所述第一彩膜层200具有红色色阻210、绿色色阻220及蓝色色阻230；
形成一第一量子点光致发光膜(first quantum dot photoluminescence film，first QD-PL Film)300于所述第一彩膜层200上，所述第一量子点光致发光膜300具有与所述第一彩膜层200的红色色阻210对应且将蓝光转换为红光的第一转换部分310及与所述第一彩膜层200的绿色色阻220对应且将蓝光转化为绿光的第二转换部分320；
形成一像素限定层850于所述第一量子点光致发光膜300上，所述像素限定层850具有一开口851；
形成一白光有机发光二极管发光层100于所述开口851中；
形成一第二量子点光致发光膜500于所述开口851中，所述第二量子点光致发光膜500设置在所述白光有机发光二极管发光层100上；
提供一透明盖板800；
形成一第二彩膜层400于所述透明盖板800上，所述第二彩膜400层具有红色色阻410、绿色色阻420及蓝色色阻430，其中所述第二量子点光致发光膜500具有与所述第二彩膜层400的红色色阻410对应且将蓝光转换为红光的第三转换部分510及与所述第二彩膜层400的绿色色阻420对应且将蓝光转化为绿光的第四转换部分520；及
将所述基板700与所述透明盖板800进行贴合，使得所述第二彩膜层400与所述第二量子点光致发光膜500相对。
所述第一彩膜层200、所述第一量子点光致发光膜300、所述白光有机发光二极管发光层100、所述第二量子点光致发光膜500及所述第二彩膜层400被形成为其位置彼此相对应，以实现彩色显示。
所述制造双面白光有机发光二极管显示装置1000的方法还包括形成一钝化层65在所述第二电极60与所述第二量子点光致发光膜500之间。
所述基板700是刚性基板或柔性基板。所述刚性基板的材质可以为玻璃。所述柔性基板的材质可以为聚酰亚胺。
所述透明盖板800的材质可以为玻璃，以使光7000可以透过。
所述白光有机发光二极管发光层100具有一叠层结构，所述叠层结构选自以下多层组合其中之一：蓝光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层与绿光发光层；及蓝光发光层与红光发光层与绿光发光层。
所述第一量子点光致发光膜300与所述第二量子点光致发光膜500是以喷墨打印或转印形成的。所述第一量子点光致发光膜300与所述第二量子点光致发光膜500是量子点增强薄膜(quantum dot enhancement film， QD-EF)。
相较于现有技术，本发明提出一种双面白光有机发光二极管显示装置及其制造方法。通过将量子点光致发光膜设置在白光有机发光二极管发光层与彩膜层之间，所述量子点光致发光膜具有与彩膜层的红色色阻对应且将蓝光转换为红光的转换部分及与彩膜层的绿色色阻对应且将蓝光转化为绿光的转换部分，本发明可以解决现有技术中色域低、能量利用率低、功耗高的技术问题。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (14)

  1. 一种双面白光有机发光二极管显示装置，包括：
    一白光有机发光二极管发光层；
    一第一彩膜层，设置在所述白光有机发光二极管发光层下方，所述第一彩膜层具有红色色阻、绿色色阻及蓝色色阻；
    一第一量子点光致发光膜，设置在所述白光有机发光二极管发光层与所述第一彩膜层之间，所述第一量子点光致发光膜具有与所述第一彩膜层的红色色阻对应且将蓝光转换为红光的第一转换部分及与所述第一彩膜层的绿色色阻对应且将蓝光转化为绿光的第二转换部分；
    一第二彩膜层，设置在所述白光有机发光二极管发光层上方，所述第二彩膜层具有红色色阻、绿色色阻及蓝色色阻；及
    一第二量子点光致发光膜，设置在所述白光有机发光二极管发光层与所述第二彩膜层之间，所述第二量子点光致发光膜具有与所述第二彩膜层的红色色阻对应且将蓝光转换为红光的第三转换部分及与所述第二彩膜层的绿色色阻对应且将蓝光转化为绿光的第四转换部分；
    其中，一像素限定层设置在所述第一量子点光致发光膜与所述第二彩膜层之间，所述像素限定层具有一朝上的开口，所述白光有机发光二极管发光层和所述第二量子点光致发光膜位在所述开口中；
    其中，所述白光有机发光二极管发光层具有一叠层结构，所述叠层结构选自以下多层组合其中之一：蓝光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层与绿光发光层；及蓝光发光层与红光发光层与绿光发光层。
  2. 根据权利要求1所述的双面白光有机发光二极管显示装置，其中，所述第一量子点光致发光膜与所述第二量子点光致发光膜是量子点增强薄膜。
  3. 根据权利要求1所述的双面白光有机发光二极管显示装置，其中，所述双面白光有机发光二极管显示装置更包括一基板，所述基板是刚性基板或柔性基板，所述白光有机发光二极管发光层、所述第一彩膜层、所述第一量子点光致发光膜、所述第二彩膜层及所述第二量子点光致发光膜设置在所述基板上。
  4. 根据权利要求3所述的双面白光有机发光二极管显示装置，其中，所述刚性基板的材质为玻璃，所述柔性基板的材质为聚酰亚胺。
  5. 一种双面白光有机发光二极管显示装置，包括：
    一白光有机发光二极管发光层；
    一第一彩膜层，设置在所述白光有机发光二极管发光层下方，所述第一彩膜层具有红色色阻、绿色色阻及蓝色色阻；
    一第一量子点光致发光膜，设置在所述白光有机发光二极管发光层与所述第一彩膜层之间，所述第一量子点光致发光膜具有与所述第一彩膜层的红色色阻对应且将蓝光转换为红光的第一转换部分及与所述第一彩膜层的绿色色阻对应且将蓝光转化为绿光的第二转换部分；
    一第二彩膜层，设置在所述白光有机发光二极管发光层上方，所述第二彩膜层具有红色色阻、绿色色阻及蓝色色阻；及
    一第二量子点光致发光膜，设置在所述白光有机发光二极管发光层与所述第二彩膜层之间，所述第二量子点光致发光膜具有与所述第二彩膜层的红色色阻对应且将蓝光转换为红光的第三转换部分及与所述第二彩膜层的绿色色阻对应且将蓝光转化为绿光的第四转换部分；
    其中，一像素限定层设置在所述第一量子点光致发光膜与所述第二彩膜层之间，所述像素限定层具有一朝上的开口，所述白光有机发光二极管发光层和所述第二量子点光致发光膜位在所述开口中。
  6. 根据权利要求5所述的双面白光有机发光二极管显示装置，其中，所述白光有机发光二极管发光层具有一叠层结构，所述叠层结构选自以下多层组合其中之一：蓝光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层与绿光发光层；及蓝光发光层与红光发光层与绿光发光层。
  7. 根据权利要求5所述的双面白光有机发光二极管显示装置，其中，所述第一量子点光致发光膜与所述第二量子点光致发光膜是量子点增强薄膜。
  8. 根据权利要求5所述的双面白光有机发光二极管显示装置，其中，所述双面白光有机发光二极管显示装置更包括一基板，所述基板是刚性基板或柔性基板，所述白光有机发光二极管发光层、所述第一彩膜层、所述第一量子点光致发光膜、所述第二彩膜层及所述第二量子点光致发光膜设置在所述基板上。
  9. 根据权利要求8所述的双面白光有机发光二极管显示装置，其中，所述刚性基板的材质为玻璃，所述柔性基板的材质为聚酰亚胺。
  10. 一种制造双面白光有机发光二极管显示装置的方法，包括以下步骤：
    提供一基板；
    形成一第一彩膜层于所述基板上，所述第一彩膜层具有红色色阻、绿色色阻及蓝色色阻；
    形成一第一量子点光致发光膜于所述第一彩膜层上，所述第一量子点光致发光膜具有与所述第一彩膜层的红色色阻对应且将蓝光转换为红光的第一转换部分及与所述第一彩膜层的绿色色阻对应且将蓝光转化为绿光的第二转换部分；
    形成一像素限定层于所述第一量子点光致发光膜上，所述像素限定层具有一开口；
    形成一白光有机发光二极管发光层于所述开口中；
    形成一第二量子点光致发光膜于所述开口中，所述第二量子点光致发光膜设置在所述白光有机发光二极管发光层上；
    提供一透明盖板；
    形成一第二彩膜层于所述透明盖板上，所述第二彩膜层具有红色色阻、绿色色阻及蓝色色阻，其中所述第二量子点光致发光膜具有与所述第二彩膜层的红色色阻对应且将蓝光转换为红光的第三转换部分及与所述第二彩膜层的绿色色阻对应且将蓝光转化为绿光的第四转换部分；及
    将所述基板与所述透明盖板进行贴合，使得所述第二彩膜层与所述第二量子点光致发光膜相对。
  11. 根据权利要求10所述的制造双面白光有机发光二极管显示装置的方法，其中，所述白光有机发光二极管发光层具有一叠层结构，所述叠层结构选自以下多层组合其中之一：蓝光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层；蓝光发光层与红光发光层与黄光发光层与绿光发光层；及蓝光发光层与红光发光层与绿光发光层。
  12. 根据权利要求10所述的制造双面白光有机发光二极管显示装置的方法，其中，所述第一量子点光致发光膜与所述第二量子点光致发光膜是以喷墨打印或转印形成的，所述第一量子点光致发光膜与所述第二量子点光致发光膜是量子点增强薄膜。
  13. 根据权利要求10所述的制造双面白光有机发光二极管显示装置的方法，其中，所述基板是刚性基板或柔性基板，所述刚性基板的材质为玻璃，所述柔性基板的材质为聚酰亚胺。
  14. 根据权利要求10所述的制造双面白光有机发光二极管显示装置的方法，其中，所述透明盖板的材质为玻璃。
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110931652A (zh) * 2019-11-26 2020-03-27 深圳市华星光电半导体显示技术有限公司 Oled双面显示装置
CN111403439A (zh) * 2020-03-20 2020-07-10 京东方科技集团股份有限公司 显示基板及显示面板
CN113299708B (zh) * 2021-05-12 2022-09-09 武汉华星光电技术有限公司 双面显示面板及其制备方法
CN113270459B (zh) * 2021-05-14 2023-04-28 长沙惠科光电有限公司 背面发光的有机发光显示面板及其制造方法和显示装置
CN113270458B (zh) * 2021-05-14 2023-04-25 长沙惠科光电有限公司 正面发光的有机发光显示面板及其制造方法和显示装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040263064A1 (en) * 2003-06-24 2004-12-30 Cheng-Wen Huang Integrated double-sided organic light-emitting display
CN101163358A (zh) * 2007-11-14 2008-04-16 清华大学 一种显示装置
CN101373576A (zh) * 2007-08-24 2009-02-25 统宝光电股份有限公司 图像显示系统
CN108364990A (zh) * 2018-02-27 2018-08-03 武汉华星光电半导体显示技术有限公司 双面显示面板及双面显示装置
CN108400155A (zh) * 2018-04-23 2018-08-14 京东方科技集团股份有限公司 Oled双面显示面板及其制备方法
CN108922906A (zh) * 2018-07-20 2018-11-30 深圳市华星光电半导体显示技术有限公司 Oled显示器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104979486B (zh) * 2015-07-15 2017-12-08 京东方科技集团股份有限公司 有机发光器件
CN105097878B (zh) * 2015-07-17 2018-02-13 京东方科技集团股份有限公司 有机电致发光显示面板及制备方法、显示装置
CN106684112A (zh) * 2016-11-23 2017-05-17 信利（惠州）智能显示有限公司 有机发光显示装置及其制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040263064A1 (en) * 2003-06-24 2004-12-30 Cheng-Wen Huang Integrated double-sided organic light-emitting display
CN101373576A (zh) * 2007-08-24 2009-02-25 统宝光电股份有限公司 图像显示系统
CN101163358A (zh) * 2007-11-14 2008-04-16 清华大学 一种显示装置
CN108364990A (zh) * 2018-02-27 2018-08-03 武汉华星光电半导体显示技术有限公司 双面显示面板及双面显示装置
CN108400155A (zh) * 2018-04-23 2018-08-14 京东方科技集团股份有限公司 Oled双面显示面板及其制备方法
CN108922906A (zh) * 2018-07-20 2018-11-30 深圳市华星光电半导体显示技术有限公司 Oled显示器

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