WO2020206773A1 - Dispositif à diode électroluminescente organique et son procédé de fabrication - Google Patents

Dispositif à diode électroluminescente organique et son procédé de fabrication Download PDF

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Publication number
WO2020206773A1
WO2020206773A1 PCT/CN2019/085532 CN2019085532W WO2020206773A1 WO 2020206773 A1 WO2020206773 A1 WO 2020206773A1 CN 2019085532 W CN2019085532 W CN 2019085532W WO 2020206773 A1 WO2020206773 A1 WO 2020206773A1
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WO
WIPO (PCT)
Prior art keywords
layer
light emitting
manufacturing
glass substrate
cover plate
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Application number
PCT/CN2019/085532
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English (en)
Chinese (zh)
Inventor
魏锋
李金川
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020206773A1 publication Critical patent/WO2020206773A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the field of display, in particular to an organic light emitting diode device and a manufacturing method thereof.
  • Organic light emitting diode devices (Organic Light Emitting Diode, OLED) are also called organic electroluminescent displays and organic light emitting semiconductors. Because of its self-luminous, infinitely high contrast ratio, wide viewing angle, low power consumption, extremely fast response, and flexible display, it has been regarded as a new generation of display technology since its discovery.
  • QD-OLED takes into account the bright and vivid quantum dots, the independent light-emitting and ultra-thin design of OLEDs.
  • the industry is currently in the research and development stage. In the future, it will have the opportunity to emerge in the display terminal market.
  • QD-OLED is more like a combination of quantum dots and OLED. It uses blue OLED as the light source, and a layer of quantum dot QD film is placed on the upper layer. The corresponding blue pixels will directly transmit blue light, while the red and green pixels are actually red and green pixels. Green quantum dots, after receiving blue light, will excite red and green light. So as to achieve full color.
  • the QD-OLED screen device is composed of a glass substrate and a glass cover.
  • the glass substrate is formed with a thin film transistor layer and an OLED blue light emitting layer.
  • the glass cover is formed with a color filter, a quantum red light emitting layer, and a quantum green light emitting layer.
  • the glass substrate and the glass cover plate need to be precisely aligned and packaged to ensure that the effective pixels of the quantum light-emitting layer meet the needs of backlighting. Due to the box distance between the glass substrate and the glass cover plate, adjacent pixels are required during QD-OLED screen operation. Prone to light leakage problems.
  • the purpose of the present invention is to provide an organic light-emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and installing an optical isolation layer to block light. problem.
  • an embodiment of the present invention provides an organic light emitting diode device, which includes a glass substrate, a glass cover plate arranged opposite to the glass substrate, and a sealant layer.
  • a glass substrate On the upper surface of the glass substrate, an array substrate layer, an electroluminescent layer, and a first thin film encapsulation layer are sequentially stacked; a glass cover plate is arranged opposite to the glass substrate, and a colored glass cover is sequentially stacked on the lower surface of the glass cover plate.
  • the sealant layer is located between the glass substrate and the glass cover plate and is distributed around the glass substrate and the glass cover plate for Connect and seal the glass substrate and the glass cover;
  • the color filter includes a black photoresist layer, a red and green color filter layer, and a first planarization layer; wherein, the light isolation layer and the The black photoresist layers are arranged opposite to each other, and are used to block the light emitted by the electroluminescent layer to prevent light leakage.
  • the organic light-emitting diode device further includes a filling layer located inside the sealant layer for filling and connecting the glass substrate and the glass cover plate.
  • the quantum light-emitting layer includes a black matrix layer, a red and green quantum dot film layer, and a second planarization layer in order from bottom to top; the light isolation layer is arranged opposite to the black matrix layer; the electroluminescence
  • the layers include a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer and a cathode layer in order from bottom to top.
  • a desiccant layer is further included between the sealant layer and the filling layer.
  • the color filter and the quantum light emitting layer further include a second light adjustment layer and a second thin film encapsulation layer.
  • the step of manufacturing a glass substrate includes providing a glass substrate, and sequentially fabricating an array substrate layer, an electroluminescence layer, and a first thin film packaging layer on the upper surface of the glass substrate;
  • the step of manufacturing a glass cover plate is to provide a glass cover plate, on the lower surface of the glass cover plate, a color filter, a quantum light-emitting layer, an optical modulation layer and an optical isolation layer are sequentially manufactured; the thickness of the color filter is less than 3.5um; the thickness of the quantum light-emitting layer is less than 10um;
  • a filling layer is used to fill between the glass substrate and the glass cover plate, and the first film packaging layer and the filling layer are arranged opposite to each other, so that the glass substrate and the glass cover plate Connected through the filling layer; a sealant layer is used for sealing and connecting around the glass substrate and the glass cover, wherein the sealant layer is located outside the filling layer.
  • the step of manufacturing the glass substrate structure specifically includes:
  • the step of preparing the array substrate layer is to provide a glass substrate on which the array substrate layer is formed layer by layer through sputtering film formation, organic chemical film formation, exposure, development and etching processes;
  • the step of preparing an electroluminescent layer is to use a mask evaporation process to sequentially form a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and an electron injection layer on the array substrate layer from bottom to top.
  • the cathode layer is used as an electroluminescent layer; the thickness of the electroluminescent layer is in the range of 400-600nm; the cathode layer is a top emission cathode, and the material is any one of ITO, IZO, Mg or Ag;
  • the step of making a first thin-film encapsulation layer is to use chemical vapor deposition to make a first thin-film encapsulation layer, the first thin-film encapsulation layer is a SiO ⁇ SiOC ⁇ SiON single layer or a combination of multiple layers, and the first thin-film encapsulation layer is The thickness range is 500-800nm.
  • the manufacturing of the color filter in the step of manufacturing the glass cover specifically includes: sequentially manufacturing a black photoresist layer, a red and green color filter layer, and a first planarization layer on the lower surface of the glass cover.
  • the black photoresist layer, the red and green color filter layer and the first planarization layer constitute the color filter, and the thickness of the color filter is less than 3.5um.
  • the step of making a glass cover plate further includes the step of making a second light adjustment layer and a second thin film encapsulation layer, which is to make the second light between the color filter and the quantum light emitting layer.
  • An adjustment layer and the second film encapsulation layer are to make the second light between the color filter and the quantum light emitting layer.
  • the step of packaging into a box further includes the step of making a desiccant layer, which is to provide a desiccant as a desiccant layer between the sealant layer and the filling layer, and the desiccant layer is The glue layer is arranged relatively.
  • the advantage of the present invention is to provide an organic light emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and setting the optical isolation layer to block light. problem.
  • FIG. 1 is a schematic diagram of the structure of an organic light emitting diode device in an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the structure of the electroluminescent layer in FIG. 1;
  • FIG. 3 is a schematic diagram of the structure of an organic light emitting diode device in another embodiment of the present invention.
  • FIG. 4 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the invention.
  • FIG. 5 is a manufacturing flow chart of the steps of manufacturing the glass substrate in FIG. 4;
  • FIG. 6 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the present invention, in which the steps of manufacturing a second light adjustment layer and a second thin film encapsulation layer are added to the manufacturing process shown in FIG. 4;
  • FIG. 7 is a manufacturing flow chart of an organic light emitting diode device in an embodiment of the present invention, in which a step of manufacturing a desiccant layer is added to the manufacturing process shown in FIG. 6.
  • the "above” or “below” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or merely indicating that the first feature is higher in level than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • an embodiment of the present invention provides an organic light emitting diode device 1, including a glass substrate 10, a glass cover 20 disposed opposite to the glass substrate 10, and a sealant layer 30.
  • the sealant layer 30 is located between the glass substrate 10 and the glass cover plate 20 and distributed around, and is used to connect and seal the glass substrate 10 and the glass cover plate 20.
  • an array substrate layer 11, an electroluminescent layer 12, and a first thin film encapsulation layer 13 are sequentially stacked; on the lower surface of the glass cover plate 20, a color filter 21, The quantum light emitting layer 22, the optical modulation layer 23, and the light isolation layer 24.
  • the organic light-emitting diode device 1 further includes a filling layer 25 located inside the sealant layer 30 for filling and connecting the glass substrate 10 and the glass cover 20, especially To fill the gap between the glass substrate 10 and the glass cover 20.
  • the color filter 21 includes a black photoresist layer 211, a red and green color filter layer 212, and a first planarization layer 213; wherein, the light isolation layer 24 is disposed opposite to the black photoresist layer 211 for The light emitted by the electroluminescent layer 12 is blocked to prevent light leakage.
  • the sealant layer 30 is preferably a UV glue layer.
  • the quantum light-emitting layer 22 includes a black matrix layer 221, a red and green quantum dot film layer 222, and a second planarization layer 223; the optical isolation layer 24 is arranged opposite to the black matrix layer.
  • the array substrate layer 11 includes a thin film transistor layer, a pixel definition layer, and an anode layer in order from bottom to top. This structure is a prior art, and will not be described here.
  • the electroluminescent layer 12 includes a hole injection layer 121, a hole transport layer 122, an organic light emitting layer 123, an electron transport layer 124, an electron injection layer 125, and a cathode layer 126 from bottom to top. .
  • a desiccant layer 31 is further included between the sealant layer 30 and the filling layer 25.
  • the color filter 21 and the quantum light emitting layer 22 further include a second light adjustment layer 26 and a second thin film encapsulation layer 27.
  • the present invention provides a manufacturing method of an organic light emitting diode.
  • the manufacturing method includes steps S1-S3.
  • the step S1 of manufacturing the glass substrate 10 is to provide a glass substrate 10, and sequentially fabricate the array substrate layer 11, the electroluminescent layer 12 and the first thin film encapsulation layer 13 on the upper surface of the glass substrate 10 from bottom to top.
  • Step S2 of manufacturing the glass cover plate 20 specifically, providing a glass cover plate 20, on which the color filter 21, the quantum light emitting layer 22, the optical modulation layer 23 and the light isolation layer 24 are sequentially manufactured on the glass cover plate 20 from bottom to top;
  • the thickness of the color filter 21 is less than 3.5 um; the thickness of the quantum light-emitting layer 22 is less than 10 um.
  • the packaging into a box step S3, specifically, using a filling layer 25 to fill and connect the glass substrate 10 and the glass cover plate 20, and use a sealant layer 30 around the glass substrate 10 and the glass cover plate 20 opposite to each other. Seal and connect.
  • the first film encapsulation layer 13 and the filling layer 25 are arranged opposite to each other, and the sealant layer 30 is located outside the filling layer 25.
  • the step S1 of manufacturing the glass substrate specifically includes:
  • Step S11 of preparing the array substrate layer specifically, providing a glass substrate 10, and forming the array substrate layer 11 layer by layer on the upper surface of the glass substrate 10 through sputtering film formation, organic chemical film formation, exposure, development and etching processes.
  • the array substrate layer 11 includes a thin film transistor layer, a pixel definition layer, and an anode layer in order from bottom to top;
  • Step S12 of preparing an electroluminescent layer specifically, a hole injection layer 121, a hole transport layer 122, and an organic light emitting layer are sequentially formed on the array substrate layer 11 using an Open MASK process from bottom to top 123.
  • the electron transport layer 124, the electron injection layer 125 and the cathode layer 126 serve as the electroluminescent layer 12; the thickness of the electroluminescent layer 12 ranges from 400 to 600nm; the cathode layer 126 is a top emission cathode, and the material is used Any one of ITO, IZO, Mg or Ag; among them, inkjet printing and mask evaporation can also be used to make the electroluminescent layer 12, and the electroluminescent layer 12 is made of B ⁇ BB ⁇ BBB Single layer or tandem multilayer structure;
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the step of manufacturing the color filter 21 specifically includes: sequentially manufacturing a black photoresist layer, a red and green color filter layer, and a first planarization layer on the glass cover 20 from bottom to top,
  • the black photoresist layer, the red and green color filter layer and the first planarization layer constitute a color filter 21.
  • the step of fabricating the quantum light emitting layer 22 specifically includes: sequentially fabricating a black matrix layer 221, a red and green quantum dot film layer 222, and a second planarization layer 223 on the lower surface of the color filter 21
  • the black matrix layer, the red and green quantum dot film layer, and the second planarization layer constitute the quantum light emitting layer 22.
  • the step S2 of making the glass cover plate 20 further includes the step S21 of making the second light adjustment layer 26 and the second thin film encapsulation layer 27, specifically, the color filter
  • the second light adjustment layer 26 and the second thin film encapsulation layer 27 are formed between 21 and the quantum light emitting layer 22.
  • the packaging and forming step S3 also includes the step S31 of making a desiccant layer.
  • a desiccant is disposed between the sealant layer 30 and the filling layer 25 as the desiccant layer 31.
  • the desiccant layer 31 is disposed opposite to the sealant layer 30.
  • the desiccant is preferably Getter desiccant.
  • the advantage of the present invention is to provide an organic light emitting diode device and a manufacturing method thereof, which can solve the light leakage of the device caused by the thickness of the box by reducing the box distance between the glass substrate and the glass cover and setting the optical isolation layer to block light. problem.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un dispositif à diode électroluminescente organique et son procédé de fabrication. Le dispositif à diode électroluminescente organique comprend un substrat en verre (10), une plaque de recouvrement en verre (20) et des couches d'étanchéité (30), la surface supérieure du substrat en verre (10) comprenant séquentiellement une couche de substrat de réseau (11), une couche électroluminescente (12) et une première couche d'encapsulation de film mince (13) ; la surface inférieure de la plaque de recouvrement de verre (20) comprend séquentiellement un filtre de couleur (21), une couche électroluminescente quantique (22), une couche de modulation optique (23) et une couche d'isolation optique (24) ; la couche d'isolation optique (24) est placée à l'opposé d'une couche de blocage de lumière noire (211) du filtre de couleur (21) et est conçue pour bloquer la lumière émise par la couche électroluminescente (12). Le procédé de fabrication du dispositif à diode électroluminescente organique comprend les étapes consistant à fabriquer le substrat en verre (10), à fabriquer la plaque de recouvrement en verre (20) et à réaliser une encapsulation sous la forme d'une cellule. En réduisant la distance de cellule entre le substrat de verre (10) et la plaque de recouvrement en verre (20) et en fournissant la couche d'isolation optique (24) pour un blocage de lumière, des problèmes tels que la fuite de lumière de dispositif provoqués par l'épaisseur de cellule sont résolus.
PCT/CN2019/085532 2019-04-09 2019-05-05 Dispositif à diode électroluminescente organique et son procédé de fabrication WO2020206773A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910280574.1A CN110085750B (zh) 2019-04-09 2019-04-09 有机发光二极管器件及其制作方法
CN201910280574.1 2019-04-09

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CN110444689B (zh) * 2019-08-19 2021-11-16 京东方科技集团股份有限公司 一种显示面板及显示装置
CN111883682A (zh) * 2019-08-28 2020-11-03 广东聚华印刷显示技术有限公司 发光器件及其制作方法
CN111162108A (zh) * 2020-01-02 2020-05-15 京东方科技集团股份有限公司 一种显示面板、其制作方法及显示装置
CN111863884A (zh) * 2020-07-01 2020-10-30 深圳市华星光电半导体显示技术有限公司 量子点彩膜基板及其制备方法、显示面板

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