WO2020203123A1 - Electronic device - Google Patents

Electronic device Download PDF

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Publication number
WO2020203123A1
WO2020203123A1 PCT/JP2020/010550 JP2020010550W WO2020203123A1 WO 2020203123 A1 WO2020203123 A1 WO 2020203123A1 JP 2020010550 W JP2020010550 W JP 2020010550W WO 2020203123 A1 WO2020203123 A1 WO 2020203123A1
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WO
WIPO (PCT)
Prior art keywords
package
electronic device
heat radiating
heat
lower package
Prior art date
Application number
PCT/JP2020/010550
Other languages
French (fr)
Japanese (ja)
Inventor
大佳 國枝
林　宏樹
Original Assignee
株式会社デンソー
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Filing date
Publication date
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Publication of WO2020203123A1 publication Critical patent/WO2020203123A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N

Definitions

  • This disclosure relates to electronic devices.
  • PoP Package on Package
  • the present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide an electronic device having improved reliability by improving heat dissipation.
  • the electronic device dissipates heat to the outside with an upper package including an upper chip, a lower package including a lower chip, a printed circuit board including the upper package and the lower package stacked on top of each other.
  • a heat radiating portion that contacts the metal case that dissipates heat is provided, and the heat radiating portion is in contact with the upper package and the lower package.
  • the heat radiating portion is in contact with not only the upper package but also the lower package. Efficiently propagates to the metal case via. Therefore, heat is efficiently released from the lower package. As a result, the heat dissipation of the entire electronic device can be improved, so that it is possible to provide an electronic device with improved reliability.
  • FIG. 1 is a vertical sectional view showing a schematic configuration of an electronic device according to the first embodiment.
  • FIG. 2 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the second embodiment.
  • FIG. 3 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the third embodiment.
  • FIG. 4 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the fourth embodiment.
  • FIG. 5 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the fifth embodiment.
  • FIG. 6 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the sixth embodiment.
  • FIG. 7 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the seventh embodiment.
  • FIG. 8 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the eighth embodiment.
  • the electronic device according to the embodiment of the present disclosure will be described with reference to the drawings.
  • the same elements as those mentioned above will be given the same reference numerals or the same names, and the description thereof will be omitted, and different parts will be described.
  • the metal case 14 side of the electronic device 1 is upward, and the printed circuit board 16 side is downward.
  • the electronic device 1 As shown in FIG. 1, the electronic device 1 according to the first embodiment is a so-called PoP in which two IC packages are laminated.
  • the electronic device 1 includes an upper package 10, a lower package 12, a printed circuit board 16 (Printed Circuit Board, hereinafter referred to as PCB), a heat radiating section 30, and a metal case 14 that covers them.
  • the electronic device 1 has a substantially rectangular shape as a flat plate.
  • the upper package 10 and the lower package 12 provided in the electronic device 1 also have a substantially rectangular shape as a flat plate.
  • the metal case 14 has a function of dissipating the heat of the electronic device 1 to the outside.
  • the lower package 12 and the upper package 10 are stacked and arranged on the upper part of the PCB 16.
  • a plurality of solder balls 20 are arranged between the upper package 10 and the lower package 12.
  • the upper package 10 and the lower package 12 are connected by a plurality of solder balls 20.
  • a plurality of solder balls 22 are arranged between the lower package 12 and the PCB 16.
  • the lower package 12 and the PCB 16 are connected by a plurality of solder balls 22.
  • a thermal interface material 17 (Thermal Interface Material, hereinafter referred to as TIM) is provided between the upper surface of the heat radiating portion 30 and the inner ceiling surface of the metal case 14. Further, the TIM 18 is also arranged between the upper surface of the upper package 10 and the heat radiating portion 30. Further, the lower end portion 30c of the side portion 30b and the upper surface of the printed circuit board 16 are in contact with each other via the TIM 19. The inner side surface of the side portion 30b and the side surface of the lower package 12 are in contact with each other via the TIM 19.
  • TIMs 17, 18 and 19 are composed of a substance having high thermal conductivity, and are composed of, for example, silicon and graphite. The TIMs 17, 18 and 19 are interposed and connected between the upper package 10, the lower package 12 and the heat radiating unit 30 to function as a heat transfer member for improving heat transfer efficiency.
  • the upper package 10 includes an upper chip 10a, an upper layer 10b, and a lower layer 10c.
  • the upper chip 10a is arranged on the lower layer 10c.
  • the upper surface and side surfaces of the upper chip 10a are covered with the upper layer 10b.
  • the upper chip 10a is an integrated circuit in which a plurality of transistors, wiring, and the like are mounted on a semiconductor substrate (not shown), the upper layer 10b is, for example, a mold resin, and the lower layer 10c is, for example, a printed circuit board.
  • the upper tip 10a has a substantially rectangular shape as a flat plate.
  • the lower package 12 includes a lower chip 12a, an upper layer 12b, an intermediate layer 12c, and a lower layer 12d.
  • the lower chip 12a is arranged on the lower layer 12d, and the upper surface and the side surface are covered with the intermediate layer 12c.
  • the lower tip 12a has a substantially rectangular shape as a flat plate.
  • the laminate obtained by laminating the upper package 10 and the lower package 12 has a quadrangular prism shape as a whole.
  • the upper chip 10a is, for example, a memory such as DRAM or SRAM.
  • the lower chip 12a is, for example, a processor such as a CPU or SOC.
  • the calorific value of the lower chip 12a is larger than the calorific value of the upper chip 10a. This also applies to the second to eighth embodiments described below.
  • the heat radiating portion 30 has a rectangular box shape with a bottomless cover and an open lower portion, includes an upper portion 30a and a side portion 30b, and has an internal space.
  • the heat radiating unit 30 is made of a substance having high thermal conductivity, for example, a metal such as copper or iron.
  • the heat radiating portion 30 is arranged so as to cover the entire laminate of the upper package 10 and the lower package 12 from above.
  • the upper package 10 and the lower package 12 are arranged in the internal space of the heat radiating unit 30.
  • the upper surface of the heat radiating portion 30 and the inner ceiling surface of the metal case 14 are provided close to each other.
  • the upper surface of the heat radiating portion 30 is in contact with the inner ceiling surface of the metal case 14 via the TIM 17.
  • the TIM 17 propagates the heat from the heat radiating portion 30 to the metal case 14 by coming into contact with the heat radiating portion 30 and the metal case 14.
  • the metal case 14 dissipates this heat to the outside.
  • the upper surface of the upper package 10 and the inner ceiling surface of the heat radiating portion 30 are provided close to each other.
  • the upper surface of the upper package 10 is in contact with the inner ceiling surface of the heat radiating portion 30 via the TIM 18.
  • the TIM 18 is in contact with the upper package 10 and the heat radiating unit 30 to propagate the heat from the upper package 10 to the heat radiating unit 30.
  • the heat propagated from the lower package 12 to the heat radiating unit 30 via the TIM 18 includes the heat generated in the upper package 10 and the heat generated in the lower package 12 and propagated to the upper package 10 via the solder balls 20. included.
  • a TIM 18 may be provided between the side surface of the upper package 10 and the side portion 30b of the heat radiating portion 30 to provide a path for heat to be propagated from the side surface of the lower package 12 to the heat radiating portion 30.
  • the inner side surface of the side portion 30b of the heat radiating portion 30 and the side surface of the lower package 12 are arranged close to each other.
  • the inner surface of the side portion 30b of the heat radiating portion 30 is in contact with the side surface of the lower package 12 via the TIM 19.
  • the heat generated in the lower package 12 efficiently propagates from the side surface of the lower package 12 to the heat radiating unit 30 via the TIM 19.
  • FIG. 1 shows the approximate path of heat conduction.
  • the solid arrow indicates the path of heat propagating through the heat radiating section 30.
  • the dashed arrow indicates the heat path that propagates from the lower package 12 to the heat radiating section 30 via the upper package 10. This also applies to FIGS. 2 to 8 described later.
  • the heat generated in the upper package 10 and the lower package 12 propagates to the heat radiating unit 30, the heat propagated to the heat radiating unit 30 propagates to the metal case 14, and is radiated to the outside from the metal case 14.
  • the heat radiating unit 30 is made of a material having high thermal conductivity. Therefore, the heat propagation efficiency and the heat dissipation efficiency can be improved by efficiently propagating the heat generated in the upper package 10 and the lower package 12 to the heat radiating unit 30. Thereby, the cooling efficiency of the upper package 10 and the lower package 12 can be improved.
  • the generated heat is radiated to the outside from the metal case 14 by the above configuration, and the electronic device 1 is cooled.
  • the heat radiating portion 30 is arranged so as to cover the laminated upper package 10 and lower package 12, and the upper surface of the upper package 10 and the side surface of the lower package 12 have high thermal conductivity. It is arranged so as to come into contact with the heat radiating portion 30 via the TIMs 18 and 19. As a result, the heat generated in the upper package 10 and the lower package 12 is efficiently propagated to the heat radiating unit 30. Further, the heat radiating portion 30 and the metal case 14 are in contact with each other on the upper surface of the heat radiating portion 30 having a large area via the TIM 17 having a high thermal conductivity.
  • the heat radiating portion 30 is arranged close to the side surface of the lower package 12 so as to be in contact with the lower package 12 via the TIM 19, the heat propagation efficiency from the lower package 12 to the heat radiating portion 30 can be improved. it can. Therefore, when the lower chip 12a is an electronic component that generates a large amount of heat, such as a CPU or SOC, the heat generated here can be efficiently propagated to the heat dissipation unit 30 and the metal case 14. As a result, the heat dissipation efficiency of the entire electronic device 1 can be significantly improved, so that it is possible to provide an electronic device with improved reliability.
  • the second embodiment will be described with reference to FIG.
  • the size of the upper package 11 arranged on the lower package 12 is smaller than that of the lower package 12, and the width in the lateral direction is smaller. There is. As a result, a region P in which the upper package 11 is not placed is generated on the upper surface of the lower package 12.
  • the upper package 11 includes an upper chip 11a, an upper layer 11b, and a lower layer 11c as in the first embodiment.
  • the heat radiating portion 31 has a rectangular box shape with a bottomless cover and an open lower portion, and includes an upper portion 31a and a side portion 31b.
  • the side portion 31b is configured to be wider than that of the first embodiment, and the lateral width W1 of the side portion 31b is configured to be larger than the width of the side portion 30b of the first embodiment.
  • the heat radiating portion 31 is arranged so as to cover the upper surface and the side surface of the upper package 11. Further, the lower end portion 31c of the heat radiating portion 31 is provided so as to be located on the upper surface of the lower package 12 and in the region P where the upper package 11 is not placed.
  • the ceiling surface inside the upper portion 31a of the heat radiating portion 31 and the upper surface of the upper package 11 are arranged close to each other, and the ceiling surface inside the upper portion 31a is arranged in contact with the upper surface of the upper package 11 via TIM18.
  • the lower surface of the lower end 31c of the heat radiating portion 31 and the upper surface of the lower package 12 are arranged close to each other, and the lower surface of the lower end 31c is arranged in contact with the upper surface of the lower package 12 via TIM19.
  • Other configurations are the same as those of the electronic device 1 according to the first embodiment. As a result, the lower end portion 31c and the lower package 12 come into contact with each other via the TIM 19, and the contact area between the lower end portion 31c and the lower package 12 can be set large.
  • the thickness of the heat radiating portion 31 is increased in order to increase the width W1 of the side portion 31b is shown, but there is no intention of limiting this.
  • the purpose of the electronic device 1 according to the second embodiment is to increase the contact area with the heat radiating portion 31 on the upper surface of the lower package 12. Therefore, the heat radiating portion 31 is formed to be thinner than the heat radiating portion 31 shown in FIG. 2, and the thin heat radiating portion 31 is formed in the region P so as to follow the shapes of the upper surfaces of the upper package 11 and the lower package 12. It may be arranged in the whole area including.
  • the same effect as that of the electronic device 1 according to the first embodiment is obtained. Further, since the contact area between the heat radiating unit 31 and the lower package 12 can be set large, the heat generated in the lower package 12 can be efficiently propagated to the heat radiating unit 31. Therefore, the heat dissipation efficiency of the entire electronic device 1 can be further improved. Therefore, it is possible to provide an electronic device with further improved reliability.
  • the third embodiment will be described with reference to FIG.
  • the lateral dimension of the upper package 11 is smaller than that of the lower package 13 as in the electronic device 1 according to the second embodiment.
  • the lower package 13 has a multilayer structure including a lower chip 13a, an upper layer 13b, an intermediate layer 13c, and a lower layer 13d.
  • the third embodiment differs from the electronic device 1 according to the second embodiment in the following points.
  • the thickness L1 of the upper portion 32a of the heat radiating portion 32 is larger than the thickness L2 in which the upper package 11 and the lower package 13 are laminated and the solder balls 20 are arranged between them.
  • the interlayer connecting portion 24 is arranged in a region located directly below the lower end portion 30c of the side portion 32b of the heat radiating portion 32.
  • the interlayer connection portion 24 is an intermediate layer 13c of the lower package 13 and is located in the lateral direction of the lower chip 13a, and its upper portion and bottom portion are in contact with the upper layer 13b and the lower layer 13d. In this way, the interlayer connection portion 24 is arranged close to the lower end portion 32c.
  • the interlayer connection portion 24 is, for example, a solder ball made of solder.
  • the interlayer connection portion 24 one containing lead and tin as main components may be used, one to which copper is added, or one containing lead-free lead-free solder may be used.
  • a through hole may be provided in the intermediate layer 12c, and a metal such as copper may be embedded in the through hole to form an embedded metal.
  • the interlayer connection portion 24 is located directly below the side portion 32b, that is, in the heat propagation path when the heat generated in the lower package 13 propagates to the heat radiating portion 32. Since the interlayer connection portion 24 has a high thermal conductivity, the heat generated in the lower package 13 can be efficiently propagated to the heat dissipation portion 32.
  • the thickness L1 of the heat radiating portion 32 is set to be larger than the thickness L2 in which the upper package 11 and the lower package 13 are laminated, so that the electronic device 1
  • the overall strength is increased, the warp of the electronic device 1 can be reduced, and the heat absorption effect of the heat radiating unit 32 can be improved.
  • the interlayer connection portion 24 is located in the heat propagation path from the lower package 13 to the heat dissipation portion 32, the heat propagation efficiency can be further improved. Therefore, it is possible to provide an electronic device with improved reliability.
  • the heat radiating portion 33 does not have one end, that is, the left side portion in the figure.
  • the right side portion 33b exists, and on the right side of the figure, the heat radiating portion 33 covers the laminate of the upper package 10 and the lower package 12, as in the electronic device 1 according to the first embodiment.
  • the side surface of the lower package 12 is in contact with the inner surface of the side portion 33b of the heat radiating portion 33 via the TIM 19.
  • the same effect as that of the electronic device 1 according to the first to third embodiments is obtained. Further, since the heat radiating portion 33 does not have the left side portion in the drawing, the size of the electronic device 1 can be reduced.
  • the fifth embodiment will be described with reference to FIG. As shown in FIG. 5, most of the configurations of the electronic device 1 according to the fifth embodiment are the same as those of the electronic device 1 according to the fourth embodiment.
  • the electronic device 1 according to the fifth embodiment is different from the electronic device 1 according to the fourth embodiment in the following points.
  • the position of the lower chip 40a of the lower package 40 is laterally moved toward the side portion 33b of the heat radiating portion 33, and is arranged close to the side portion 33b.
  • the lower package 40 includes a lower chip 40a, an upper layer 40b, an intermediate layer 40c, and a lower layer 40d.
  • the same effect as that of the electronic device 1 according to the fourth embodiment is obtained. Further, since the heat transfer efficiency to the heat radiating unit 33 can be improved, it is possible to provide an electronic device having further improved reliability.
  • the upper package 41 includes an upper chip 41a, an upper layer 41b, and a lower layer 41c.
  • the upper package 41 may be further provided with an intermediate layer.
  • the heat radiating portion 34 includes an upper portion 34a, a side portion 34b, and a lower end portion 34c.
  • the upper package 41 has a smaller lateral width than the lower package 13.
  • the upper package 41 and the lower package 13 are arranged so that the left end positions match in the figure. Therefore, there is an area P on the lower package 13 on which the upper package 41 is not placed.
  • the heat radiating portion 34 does not have one side portion, that is, the left side portion in the figure. In the figure, the right side portion 34b is present.
  • the heat radiating portion 34 is in contact with the lower package 41 so as to cover the upper portion and the right side portion, and the lower end portion 34c of the heat radiating portion 34 is the upper surface of the lower package 13.
  • the lower package 41 is arranged so as to be in contact with the region P on which the lower package 41 is not placed via the TIM 19.
  • the lateral width W2 of the side portion 34b of the heat radiating portion 34 is larger than the width W1 of the side portion 31b in the second embodiment.
  • the contact area between the lower end portion 34c of the heat radiating portion 34 and the upper surface of the lower package 13 can be set large, so that the heat transfer efficiency from the lower package 13 to the heat radiating portion 34 can be improved.
  • the lateral width W2 of the side portion 34b is set large, the lower end portion 34c of the heat radiating portion 34 comes close to the lower chip 13a of the lower package 13.
  • an interlayer connection portion 24 is arranged directly below the lower end portion 34c. According to this, since the interlayer connection portion 24 exists in the heat propagation path generated by the lower chip 13a, the heat propagation efficiency from the lower chip 13a, that is, the lower package 13 to the heat radiating portion 34 can be improved.
  • the same effect as that of the electronic device 1 according to the fourth embodiment is obtained. Further, since the heat transfer efficiency from the lower package 13 to the heat radiating unit 34 can be improved, it is possible to provide an electronic device with further improved reliability, and the size of the electronic device 1 can be reduced. It plays the effect.
  • the seventh embodiment will be described with reference to FIG. 7.
  • the position of the lower chip 42a of the lower package 42 is set to the right side in the figure, that is, more heat dissipation than the electronic device 1 according to the sixth embodiment. It is moved in the lateral direction close to the lower end portion 34c of the portion 34.
  • the lower package 42 has a multilayer structure including a lower chip 42a, an upper layer 42b, an intermediate layer 42c, and a lower layer 42d. By doing so, at least a part of the lower tip 42a is positioned directly below the lower end 34c. Further, the heat diffusion portion 26 is provided in the upper layer 42b of the lower package 42, located directly below the lower end portion 34c and directly above the lower chip 42a.
  • the heat diffusion portion 26 is configured as a through electrode formed by providing a through hole in the upper layer 42b and embedding a metal such as copper in the through hole. Since the heat diffusion unit 26 is configured to have a higher thermal conductivity than the material around the heat diffusion unit 26, for example, a mold resin, the heat diffusion unit 26 is set to have a high heat transfer efficiency. Therefore, the heat generated in the lower chip 42a, which is the heat generation source of the lower package 42, propagates to the heat radiating unit 34 efficiently by propagating through the heat diffusion unit 26 located directly above the lower chip 42a.
  • the heat diffusion unit 26 may be provided in the intermediate layer 42c.
  • the same effect as that of the electronic device 1 according to the fourth embodiment is obtained. Further, since the heat diffusion portion 26, the TIM19, and the lower end portion 34c are arranged immediately above the lower chip 42a, which is a heat generation source, the heat transfer efficiency from the lower package 42 to the heat dissipation portion 34 is further improved. Can be made to.
  • the heat radiating portion 35 is arranged on the lower package 13, and the upper package 11 is arranged on the heat radiating portion 35.
  • the heat radiating portion 35 has a rectangular box shape with an open bottom and an open top, and includes a side portion 35a and a bottom portion 35b.
  • the bottom portion 35b is provided with a through hole through which the solder ball 20 penetrates, whereby the solder ball 20 connects the upper package 11 and the lower package 13.
  • the heat radiating portion 35 is arranged between the upper package 11 and the lower package 13, when the lower package 13 generates a large amount of heat and the upper package 11 is weak against heat, the lower package 13 is generated. It is suppressed that the heat generated in the above package 11 is propagated to the upper package 11. Further, since the interlayer connection portion 24 of the lower package 13 is arranged directly below the side portion 35a, the efficiency of propagating the heat generated in the lower package 13 to the metal case 14 via the heat radiating portion 35 is improved.
  • the same effect as that of the electronic device 1 according to the first embodiment is obtained. Further, since the heat radiating unit 35 suppresses the heat generated in the lower package 13 from propagating to the upper package 11, an electronic device having further improved reliability is provided, especially when the upper package 11 is weak against heat. can do.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

This electronic device is provided with: upper packages (10, 41) provided with upper chips (10a, 41a); lower packages (12, 13, 40, 42) provided with lower chips (12a, 13a, 40a, 42a); a printed board (16) on which the upper packages and the lower packages are stacked; and heat dissipation parts (30, 31, 32, 33, 34, 35) in contact with a metal case (14) that dissipates heat to the outside, wherein the heat dissipation part is in contact with the upper packages and the lower packages.

Description

電子装置Electronic device 関連出願の相互参照Cross-reference of related applications
　本出願は、２０１９年４月３日に出願された日本出願番号２０１９－０７１２５８号に基づくもので、ここにその記載内容を援用する。 This application is based on Japanese Application No. 2019-071258, which was filed on April 3, 2019, and the contents of the description are incorporated herein by reference.
　本開示は、電子装置に関する。 This disclosure relates to electronic devices.
　２つのＩＣパッケージを積層して形成されたＰｏＰ（Ｐａｃｋａｇｅ　ｏｎ　Ｐａｃｋａｇｅ）を、プリント基板に実装した電子装置が知られている。 There is known an electronic device in which PoP (Package on Package) formed by laminating two IC packages is mounted on a printed circuit board.
米国特許第９７４６８８９号明細書U.S. Pat. No. 9,746,889 米国特許出願公開第２０１７／０２９４４２２号明細書U.S. Patent Application Publication No. 2017/0294422
　上記電子装置の場合、下側のＩＣパッケージで発生した熱の放熱が十分にできないという問題が有る。特に下側のＩＣパッケージの発熱が、上側のＩＣパッケージの発熱より大きい場合にこの課題が顕著となる。
　本開示は、上記課題に鑑みてなされたものであり、その目的は、放熱性を向上させることにより、信頼性が向上した電子装置を提供することである。 In the case of the above electronic device, there is a problem that the heat generated in the lower IC package cannot be sufficiently dissipated. This problem becomes particularly remarkable when the heat generated by the lower IC package is larger than the heat generated by the upper IC package.
The present disclosure has been made in view of the above problems, and an object of the present disclosure is to provide an electronic device having improved reliability by improving heat dissipation.
　本開示の一態様において、電子装置は、上チップを備える上パッケージと、下チップを備える下パッケージと、前記上パッケージ、及び前記下パッケージを上部に積層して備えるプリント基板と、熱を外部に放熱する金属ケースに接する放熱部と、を備え、前記放熱部は、前記上パッケージ及び前記下パッケージに接する。 In one aspect of the present disclosure, the electronic device dissipates heat to the outside with an upper package including an upper chip, a lower package including a lower chip, a printed circuit board including the upper package and the lower package stacked on top of each other. A heat radiating portion that contacts the metal case that dissipates heat is provided, and the heat radiating portion is in contact with the upper package and the lower package.
　本開示の一態様に係る電子装置によれば、下パッケージにおける熱の発生が大きい場合でも、上パッケージだけでなく下パッケージにも放熱部が接しているため、下パッケージで発生した熱も放熱部を介して金属ケースに効率的に伝播する。このため、下パッケージからの熱の放出が効率的に実施される。これにより、電子装置全体の放熱性を向上させることができるため、信頼性が向上した電子装置を提供することができる。 According to the electronic device according to one aspect of the present disclosure, even when the heat generated in the lower package is large, the heat radiating portion is in contact with not only the upper package but also the lower package. Efficiently propagates to the metal case via. Therefore, heat is efficiently released from the lower package. As a result, the heat dissipation of the entire electronic device can be improved, so that it is possible to provide an electronic device with improved reliability.
　本開示についての上記目的およびその他の目的、特徴や利点は、添付の図面を参照しながら下記の詳細な記述により、より明確になる。その図面は、
図１は、第１実施形態に係る電子装置の概略構成を示す縦断面図であり、 図２は、第２実施形態に係る電子装置の概略構成を示す縦断面図であり、 図３は、第３実施形態に係る電子装置の概略構成を示す縦断面図であり、 図４は、第４実施形態に係る電子装置の概略構成を示す縦断面図であり、 図５は、第５実施形態に係る電子装置の概略構成を示す縦断面図であり、 図６は、第６実施形態に係る電子装置の概略構成を示す縦断面図であり、 図７は、第７実施形態に係る電子装置の概略構成を示す縦断面図であり、 図８は、第８実施形態に係る電子装置の概略構成を示す縦断面図である。 The above objectives and other objectives, features and advantages of the present disclosure will be clarified by the following detailed description with reference to the accompanying drawings. The drawing is
FIG. 1 is a vertical sectional view showing a schematic configuration of an electronic device according to the first embodiment. FIG. 2 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the second embodiment. FIG. 3 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the third embodiment. FIG. 4 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the fourth embodiment. FIG. 5 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the fifth embodiment. FIG. 6 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the sixth embodiment. FIG. 7 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the seventh embodiment. FIG. 8 is a vertical cross-sectional view showing a schematic configuration of the electronic device according to the eighth embodiment.
　以下、本開示の実施形態に係る電子装置について図面を参照して説明する。以下の説明において前出と同様の要素については同様の符号又は同様の名称を付して、その説明については省略することとし、異なる部分について説明する。また、以下の説明において、電子装置１の金属ケース１４側を上方向、プリント基板１６側を下方向とする。 Hereinafter, the electronic device according to the embodiment of the present disclosure will be described with reference to the drawings. In the following description, the same elements as those mentioned above will be given the same reference numerals or the same names, and the description thereof will be omitted, and different parts will be described. Further, in the following description, the metal case 14 side of the electronic device 1 is upward, and the printed circuit board 16 side is downward.
　（第１実施形態）
　図１に示すように、第１実施形態に係る電子装置１は、２つのＩＣパッケージを積層した所謂ＰｏＰである。電子装置１は、上パッケージ１０、下パッケージ１２、プリント基板１６（Ｐｒｉｎｔｅｄ　Ｃｉｒｃｕｉｔ　Ｂｏａｒｄ、以下、ＰＣＢと称する）、放熱部３０、及びこれらを覆う金属ケース１４を備えている。電子装置１は平板略矩形状をなしている。電子装置１に備えられる上パッケージ１０及び下パッケージ１２も平板略矩形状をなしている。金属ケース１４は電子装置１の熱を外部に放熱する機能を備えている。 (First Embodiment)
As shown in FIG. 1, the electronic device 1 according to the first embodiment is a so-called PoP in which two IC packages are laminated. The electronic device 1 includes an upper package 10, a lower package 12, a printed circuit board 16 (Printed Circuit Board, hereinafter referred to as PCB), a heat radiating section 30, and a metal case 14 that covers them. The electronic device 1 has a substantially rectangular shape as a flat plate. The upper package 10 and the lower package 12 provided in the electronic device 1 also have a substantially rectangular shape as a flat plate. The metal case 14 has a function of dissipating the heat of the electronic device 1 to the outside.
　ＰＣＢ１６の上部には下パッケージ１２及び上パッケージ１０が積層されて配置される。上パッケージ１０と下パッケージ１２との間には複数のはんだボール２０が配置されている。上パッケージ１０と下パッケージ１２とは複数のはんだボール２０により接続されている。下パッケージ１２とＰＣＢ１６との間には複数のはんだボール２２が配置されている。下パッケージ１２とＰＣＢ１６とは、複数のはんだボール２２により接続されている。 The lower package 12 and the upper package 10 are stacked and arranged on the upper part of the PCB 16. A plurality of solder balls 20 are arranged between the upper package 10 and the lower package 12. The upper package 10 and the lower package 12 are connected by a plurality of solder balls 20. A plurality of solder balls 22 are arranged between the lower package 12 and the PCB 16. The lower package 12 and the PCB 16 are connected by a plurality of solder balls 22.
　放熱部３０の上面と金属ケース１４の内側天井面との間にはサーマルインターフェースマテリアル１７（Ｔｈｅｒｍａｌ　Ｉｎｔｅｒｆａｃｅ　Ｍａｔｅｒｉａｌ、以下ＴＩＭと称する）が設けられている。また、上パッケージ１０の上面と放熱部３０との間にもＴＩＭ１８が配置されている。また、側部３０ｂの下端部３０ｃとプリント基板１６の上面はＴＩＭ１９を介して接している。側部３０ｂの内側面と下パッケージ１２の側面はＴＩＭ１９を介して接している。ＴＩＭ１７、１８、１９は熱伝導率が高い物質で構成されており、例えばシリコン、グラファイトを含んで構成されている。ＴＩＭ１７、１８、１９は上パッケージ１０、下パッケージ１２、及び放熱部３０の間に介在して接続し、熱の伝播効率を向上させる熱伝達部材として機能する。 A thermal interface material 17 (Thermal Interface Material, hereinafter referred to as TIM) is provided between the upper surface of the heat radiating portion 30 and the inner ceiling surface of the metal case 14. Further, the TIM 18 is also arranged between the upper surface of the upper package 10 and the heat radiating portion 30. Further, the lower end portion 30c of the side portion 30b and the upper surface of the printed circuit board 16 are in contact with each other via the TIM 19. The inner side surface of the side portion 30b and the side surface of the lower package 12 are in contact with each other via the TIM 19. TIMs 17, 18 and 19 are composed of a substance having high thermal conductivity, and are composed of, for example, silicon and graphite. The TIMs 17, 18 and 19 are interposed and connected between the upper package 10, the lower package 12 and the heat radiating unit 30 to function as a heat transfer member for improving heat transfer efficiency.
　上パッケージ１０は、上チップ１０ａ、上層１０ｂ、下層１０ｃを備えている。上チップ１０ａは下層１０ｃ上に配置されている。上チップ１０ａは上層１０ｂにより上面及び側面を覆われている。上チップ１０ａは図示しない半導体基板に複数のトランジスタ及び配線等を搭載した集積回路であり、上層１０ｂは例えばモールド樹脂、下層１０ｃは例えばプリント基板である。上チップ１０ａは平板略矩形状をなしている。 The upper package 10 includes an upper chip 10a, an upper layer 10b, and a lower layer 10c. The upper chip 10a is arranged on the lower layer 10c. The upper surface and side surfaces of the upper chip 10a are covered with the upper layer 10b. The upper chip 10a is an integrated circuit in which a plurality of transistors, wiring, and the like are mounted on a semiconductor substrate (not shown), the upper layer 10b is, for example, a mold resin, and the lower layer 10c is, for example, a printed circuit board. The upper tip 10a has a substantially rectangular shape as a flat plate.
　下パッケージ１２は、下チップ１２ａ、上層１２ｂ、中間層１２ｃ、下層１２ｄを備えている。下チップ１２ａは下層１２ｄ上に配置されており、上面及び側面を中間層１２ｃにより覆われている。下チップ１２ａは平板略矩形状をなしている。上パッケージ１０及び下パッケージ１２を積層した積層物は、全体として四角柱形状を呈している。 The lower package 12 includes a lower chip 12a, an upper layer 12b, an intermediate layer 12c, and a lower layer 12d. The lower chip 12a is arranged on the lower layer 12d, and the upper surface and the side surface are covered with the intermediate layer 12c. The lower tip 12a has a substantially rectangular shape as a flat plate. The laminate obtained by laminating the upper package 10 and the lower package 12 has a quadrangular prism shape as a whole.
　上チップ１０ａは例えばＤＲＡＭ、ＳＲＡＭ等のメモリである。下チップ１２ａは例えばＣＰＵ、ＳＯＣ等のプロセッサである。第１実施形態において、下チップ１２ａの発熱量は、上チップ１０ａの発熱量よりも大きい。このことは、下記に説明する第２実施形態から第８実施形態においても同様である。 The upper chip 10a is, for example, a memory such as DRAM or SRAM. The lower chip 12a is, for example, a processor such as a CPU or SOC. In the first embodiment, the calorific value of the lower chip 12a is larger than the calorific value of the upper chip 10a. This also applies to the second to eighth embodiments described below.
　放熱部３０は、無底有蓋で下方が開放された矩形箱型形状を呈しており、上部３０ａ及び側部３０ｂを備え、内部空間を備えている。放熱部３０は熱伝導性が高い物質、例えば銅、鉄のような金属により構成されている。放熱部３０は、上パッケージ１０と下パッケージ１２の積層物の全体を上から覆うようにして配置される。上パッケージ１０及び下パッケージ１２は放熱部３０の内部空間内に配置される。 The heat radiating portion 30 has a rectangular box shape with a bottomless cover and an open lower portion, includes an upper portion 30a and a side portion 30b, and has an internal space. The heat radiating unit 30 is made of a substance having high thermal conductivity, for example, a metal such as copper or iron. The heat radiating portion 30 is arranged so as to cover the entire laminate of the upper package 10 and the lower package 12 from above. The upper package 10 and the lower package 12 are arranged in the internal space of the heat radiating unit 30.
　放熱部３０の上面と金属ケース１４の内側天井面は近接して設けられている。放熱部３０の上面はＴＩＭ１７を介して金属ケース１４の内側天井面に接している。ＴＩＭ１７は、放熱部３０及び金属ケース１４に接することにより放熱部３０からの熱を金属ケース１４に伝播させている。金属ケース１４はこの熱を外部に放熱する。 The upper surface of the heat radiating portion 30 and the inner ceiling surface of the metal case 14 are provided close to each other. The upper surface of the heat radiating portion 30 is in contact with the inner ceiling surface of the metal case 14 via the TIM 17. The TIM 17 propagates the heat from the heat radiating portion 30 to the metal case 14 by coming into contact with the heat radiating portion 30 and the metal case 14. The metal case 14 dissipates this heat to the outside.
　上パッケージ１０の上面と放熱部３０の内側天井面は近接して設けられている。上パッケージ１０の上面はＴＩＭ１８を介して放熱部３０の内側天井面に接している。ＴＩＭ１８は、上パッケージ１０と放熱部３０に接することにより上パッケージ１０からの熱を放熱部３０に伝播させている。なお、ＴＩＭ１８を介して下パッケージ１２から放熱部３０に伝播する熱には、上パッケージ１０で発生した熱と、下パッケージ１２で発生し、はんだボール２０を介して上パッケージ１０に伝播した熱も含まれる。上パッケージ１０の側面と放熱部３０の側部３０ｂとの間にＴＩＭ１８を設けて、下パッケージ１２側面から放熱部３０に熱を伝播させる経路を備えるようにしてもよい。 The upper surface of the upper package 10 and the inner ceiling surface of the heat radiating portion 30 are provided close to each other. The upper surface of the upper package 10 is in contact with the inner ceiling surface of the heat radiating portion 30 via the TIM 18. The TIM 18 is in contact with the upper package 10 and the heat radiating unit 30 to propagate the heat from the upper package 10 to the heat radiating unit 30. The heat propagated from the lower package 12 to the heat radiating unit 30 via the TIM 18 includes the heat generated in the upper package 10 and the heat generated in the lower package 12 and propagated to the upper package 10 via the solder balls 20. included. A TIM 18 may be provided between the side surface of the upper package 10 and the side portion 30b of the heat radiating portion 30 to provide a path for heat to be propagated from the side surface of the lower package 12 to the heat radiating portion 30.
　放熱部３０の側部３０ｂの内側面と下パッケージ１２の側面は近接して配置されている。放熱部３０の側部３０ｂの内側面はＴＩＭ１９を介して下パッケージ１２の側面に接している。下パッケージ１２で発生した熱は下パッケージ１２の側面からＴＩＭ１９を介して放熱部３０に効率的に伝播する。 The inner side surface of the side portion 30b of the heat radiating portion 30 and the side surface of the lower package 12 are arranged close to each other. The inner surface of the side portion 30b of the heat radiating portion 30 is in contact with the side surface of the lower package 12 via the TIM 19. The heat generated in the lower package 12 efficiently propagates from the side surface of the lower package 12 to the heat radiating unit 30 via the TIM 19.
　図１に示された矢印は熱伝播の概略経路を示している。実線の矢印は放熱部３０を介して伝播する熱の経路を示している。破線の矢印は下パッケージ１２から上パッケージ１０を介して放熱部３０に伝播する熱の経路を示している。これは、後述する図２から図８においても同様である。 The arrow shown in FIG. 1 shows the approximate path of heat conduction. The solid arrow indicates the path of heat propagating through the heat radiating section 30. The dashed arrow indicates the heat path that propagates from the lower package 12 to the heat radiating section 30 via the upper package 10. This also applies to FIGS. 2 to 8 described later.
　このようにして、上パッケージ１０及び下パッケージ１２で発生した熱は放熱部３０に伝播し、放熱部３０に伝播した熱は金属ケース１４に伝播し、金属ケース１４から外部に放熱される。放熱部３０は、熱伝導性が高い材料を用いて構成されている。このため、上パッケージ１０、下パッケージ１２で発生した熱を効率的に放熱部３０に伝播させることにより熱の伝播効率、放熱効率を向上させることができる。これにより、上パッケージ１０及び下パッケージ１２の冷却効率を向上させることができる。発生した熱が上記構成により金属ケース１４から外部に放熱されて、電子装置１が冷却される。 In this way, the heat generated in the upper package 10 and the lower package 12 propagates to the heat radiating unit 30, the heat propagated to the heat radiating unit 30 propagates to the metal case 14, and is radiated to the outside from the metal case 14. The heat radiating unit 30 is made of a material having high thermal conductivity. Therefore, the heat propagation efficiency and the heat dissipation efficiency can be improved by efficiently propagating the heat generated in the upper package 10 and the lower package 12 to the heat radiating unit 30. Thereby, the cooling efficiency of the upper package 10 and the lower package 12 can be improved. The generated heat is radiated to the outside from the metal case 14 by the above configuration, and the electronic device 1 is cooled.
　上記に説明した第１実施形態に係る電子装置１によれば以下の効果を奏する。
　第１実施形態に係る電子装置１では、積層された上パッケージ１０及び下パッケージ１２を覆うようにして放熱部３０が配置され、上パッケージ１０の上面、下パッケージ１２の側面は熱伝導率が高いＴＩＭ１８、１９を介して放熱部３０に接触するように配置されている。これにより、上パッケージ１０及び下パッケージ１２で発生した熱が効率的に放熱部３０に伝播する。更に、放熱部３０と金属ケース１４は熱伝導率が高いＴＩＭ１７を介して面積が広い放熱部３０の上面において接触している。この構成により、上パッケージ１０及び下パッケージ１２で発生した熱は効率的に放熱部３０に伝播し、更に金属ケース１４に伝播して外部に放熱される。これにより、電子装置１全体の放熱効率を向上させることができる。 According to the electronic device 1 according to the first embodiment described above, the following effects are obtained.
In the electronic device 1 according to the first embodiment, the heat radiating portion 30 is arranged so as to cover the laminated upper package 10 and lower package 12, and the upper surface of the upper package 10 and the side surface of the lower package 12 have high thermal conductivity. It is arranged so as to come into contact with the heat radiating portion 30 via the TIMs 18 and 19. As a result, the heat generated in the upper package 10 and the lower package 12 is efficiently propagated to the heat radiating unit 30. Further, the heat radiating portion 30 and the metal case 14 are in contact with each other on the upper surface of the heat radiating portion 30 having a large area via the TIM 17 having a high thermal conductivity. With this configuration, the heat generated in the upper package 10 and the lower package 12 is efficiently propagated to the heat radiating unit 30, and further propagated to the metal case 14 to be radiated to the outside. As a result, the heat dissipation efficiency of the entire electronic device 1 can be improved.
　更に、第１実施形態では、下パッケージ１２の側面に近接して、ＴＩＭ１９を介して接するように放熱部３０を配置したため、下パッケージ１２から放熱部３０への熱の伝播効率を向上させることができる。このため、下チップ１２ａが例えばＣＰＵやＳＯＣのような発熱が大きい電子部品である場合に、ここで発生した熱を効率的に放熱部３０及び金属ケース１４に伝播させることができる。これにより電子装置１全体の放熱効率を大幅に向上させることができるため、信頼性が向上した電子装置を提供することができる。 Further, in the first embodiment, since the heat radiating portion 30 is arranged close to the side surface of the lower package 12 so as to be in contact with the lower package 12 via the TIM 19, the heat propagation efficiency from the lower package 12 to the heat radiating portion 30 can be improved. it can. Therefore, when the lower chip 12a is an electronic component that generates a large amount of heat, such as a CPU or SOC, the heat generated here can be efficiently propagated to the heat dissipation unit 30 and the metal case 14. As a result, the heat dissipation efficiency of the entire electronic device 1 can be significantly improved, so that it is possible to provide an electronic device with improved reliability.
　（第２実施形態）
　次に、第２実施形態について図２を参照して説明する。図２に示すように、第２実施形態に係る電子装置１においては、下パッケージ１２上に配置される上パッケージ１１の大きさが下パッケージ１２よりも小さく、横方向の幅が小さく構成されている。これにより、下パッケージ１２の上面に上パッケージ１１が載置されていない領域Ｐが発生する。なお、上パッケージ１１は第１実施形態と同様に上チップ１１ａ、上層１１ｂ、下層１１ｃを備えている。 (Second Embodiment)
Next, the second embodiment will be described with reference to FIG. As shown in FIG. 2, in the electronic device 1 according to the second embodiment, the size of the upper package 11 arranged on the lower package 12 is smaller than that of the lower package 12, and the width in the lateral direction is smaller. There is. As a result, a region P in which the upper package 11 is not placed is generated on the upper surface of the lower package 12. The upper package 11 includes an upper chip 11a, an upper layer 11b, and a lower layer 11c as in the first embodiment.
　第２実施形態に係る電子装置１では、放熱部３１は無底有蓋で下部が開放された矩形箱型形状を呈しており、上部３１ａ及び側部３１ｂを備える。側部３１ｂは第１実施形態に比較して幅広に構成されており、側部３１ｂの横方向の幅Ｗ１は、第１実施形態の側部３０ｂの幅よりも大きく構成されている。 In the electronic device 1 according to the second embodiment, the heat radiating portion 31 has a rectangular box shape with a bottomless cover and an open lower portion, and includes an upper portion 31a and a side portion 31b. The side portion 31b is configured to be wider than that of the first embodiment, and the lateral width W1 of the side portion 31b is configured to be larger than the width of the side portion 30b of the first embodiment.
　第２実施形態において、放熱部３１は、上パッケージ１１の上面及び側面を覆うようにして配置されている。更に、放熱部３１の下端部３１ｃは下パッケージ１２上面であって上パッケージ１１が載置されていない領域Ｐに位置するように設けられている。 In the second embodiment, the heat radiating portion 31 is arranged so as to cover the upper surface and the side surface of the upper package 11. Further, the lower end portion 31c of the heat radiating portion 31 is provided so as to be located on the upper surface of the lower package 12 and in the region P where the upper package 11 is not placed.
　放熱部３１の上部３１ａの内側の天井面と上パッケージ１１上面は近接して配置され、上部３１ａ内側の天井面はＴＩＭ１８を介して上パッケージ１１上面に接して配置されている。 The ceiling surface inside the upper portion 31a of the heat radiating portion 31 and the upper surface of the upper package 11 are arranged close to each other, and the ceiling surface inside the upper portion 31a is arranged in contact with the upper surface of the upper package 11 via TIM18.
　下パッケージ１２の領域Ｐにおいて、放熱部３１の下端部３１ｃの下面と下パッケージ１２の上面は近接して配置され、下端部３１ｃの下面はＴＩＭ１９を介して下パッケージ１２上面に接して配置されている。その他の構成は第１実施形態に係る電子装置１と同様である。これにより、下端部３１ｃと下パッケージ１２はＴＩＭ１９を介して接触し、下端部３１ｃと下パッケージ１２との接触面積を大きく設定することができる。 In the region P of the lower package 12, the lower surface of the lower end 31c of the heat radiating portion 31 and the upper surface of the lower package 12 are arranged close to each other, and the lower surface of the lower end 31c is arranged in contact with the upper surface of the lower package 12 via TIM19. There is. Other configurations are the same as those of the electronic device 1 according to the first embodiment. As a result, the lower end portion 31c and the lower package 12 come into contact with each other via the TIM 19, and the contact area between the lower end portion 31c and the lower package 12 can be set large.
　なお、第２実施形態に係る電子装置１において、側部３１ｂの幅Ｗ１を大きくするため放熱部３１の厚さを大きく構成した例を示したがこれに限定する意図はない。第２実施形態に係る電子装置１においては、下パッケージ１２の上面において、放熱部３１との接触面積を大きく採ることが目的である。従って、放熱部３１を図２に示した放熱部３１よりも更に厚さを薄く構成して、上パッケージ１１と下パッケージ１２の上面の形状に沿うようにして、薄い放熱部３１を、領域Ｐを含む全域に配置させるようにしてもよい。 In the electronic device 1 according to the second embodiment, an example in which the thickness of the heat radiating portion 31 is increased in order to increase the width W1 of the side portion 31b is shown, but there is no intention of limiting this. The purpose of the electronic device 1 according to the second embodiment is to increase the contact area with the heat radiating portion 31 on the upper surface of the lower package 12. Therefore, the heat radiating portion 31 is formed to be thinner than the heat radiating portion 31 shown in FIG. 2, and the thin heat radiating portion 31 is formed in the region P so as to follow the shapes of the upper surfaces of the upper package 11 and the lower package 12. It may be arranged in the whole area including.
　上記に説明した第２実施形態に係る電子装置１によれば第１実施形態に係る電子装置１と同様の効果を奏する。更に、放熱部３１と下パッケージ１２との接触面積を大きく設定できるため、下パッケージ１２で発生した熱を効率的に放熱部３１に伝播させることができる。このため、電子装置１全体の放熱効率を更に向上させることができる。従って、更に信頼性が向上した電子装置を提供することができる。 According to the electronic device 1 according to the second embodiment described above, the same effect as that of the electronic device 1 according to the first embodiment is obtained. Further, since the contact area between the heat radiating unit 31 and the lower package 12 can be set large, the heat generated in the lower package 12 can be efficiently propagated to the heat radiating unit 31. Therefore, the heat dissipation efficiency of the entire electronic device 1 can be further improved. Therefore, it is possible to provide an electronic device with further improved reliability.
　（第３実施形態）
　次に、第３実施形態について図３を参照して説明する。図３に示すように、第３実施形態に係る電子装置１においては、第２実施形態に係る電子装置１と同様、上パッケージ１１の横方向の寸法は、下パッケージ１３よりも小さく構成されており、下パッケージ１３の上面には上パッケージ１１が載置されていない領域Ｐが存在する。下パッケージ１３は、下チップ１３ａ、及び上層１３ｂと中間層１３ｃと下層１３ｄとを備える多層構造を備えている。 (Third Embodiment)
Next, the third embodiment will be described with reference to FIG. As shown in FIG. 3, in the electronic device 1 according to the third embodiment, the lateral dimension of the upper package 11 is smaller than that of the lower package 13 as in the electronic device 1 according to the second embodiment. There is a region P on the upper surface of the lower package 13 on which the upper package 11 is not placed. The lower package 13 has a multilayer structure including a lower chip 13a, an upper layer 13b, an intermediate layer 13c, and a lower layer 13d.
　第３実施形態では、第２実施形態に係る電子装置１に比較して、以下の点において異なる。放熱部３２の上部３２ａの厚さＬ１は、上パッケージ１１と下パッケージ１３を積層し、その間にはんだボール２０を配置した厚さＬ２よりも大きい。また、下パッケージ１３において、放熱部３２の側部３２ｂの下端部３０ｃの直下に位置する領域に、層間接続部２４が配置されている。 The third embodiment differs from the electronic device 1 according to the second embodiment in the following points. The thickness L1 of the upper portion 32a of the heat radiating portion 32 is larger than the thickness L2 in which the upper package 11 and the lower package 13 are laminated and the solder balls 20 are arranged between them. Further, in the lower package 13, the interlayer connecting portion 24 is arranged in a region located directly below the lower end portion 30c of the side portion 32b of the heat radiating portion 32.
　層間接続部２４は、下パッケージ１３の中間層１３ｃであって下チップ１３ａの横方向に位置し、その上部と底部が上層１３ｂと下層１３ｄに接触している。このように、層間接続部２４は下端部３２ｃに近接して配置されている。層間接続部２４は例えばはんだで構成されたはんだボールである。層間接続部２４として、鉛とスズを主成分とするものを用いてもよいし、さらに銅が添加されたもの、あるいは、鉛を含まない鉛フリーはんだを用いてもよい。あるいは、中間層１２ｃに貫通孔を設け、貫通孔内に例えば銅などの金属を埋め込んで形成した埋め込み金属として構成してもよい。 The interlayer connection portion 24 is an intermediate layer 13c of the lower package 13 and is located in the lateral direction of the lower chip 13a, and its upper portion and bottom portion are in contact with the upper layer 13b and the lower layer 13d. In this way, the interlayer connection portion 24 is arranged close to the lower end portion 32c. The interlayer connection portion 24 is, for example, a solder ball made of solder. As the interlayer connection portion 24, one containing lead and tin as main components may be used, one to which copper is added, or one containing lead-free lead-free solder may be used. Alternatively, a through hole may be provided in the intermediate layer 12c, and a metal such as copper may be embedded in the through hole to form an embedded metal.
　層間接続部２４は、側部３２ｂの直下、すなわち、下パッケージ１３で発生した熱が放熱部３２に伝播する際の熱の伝播経路に位置している。層間接続部２４は熱伝導率が大きいため、下パッケージ１３で発生した熱を放熱部３２に効率的に伝播させることができる。 The interlayer connection portion 24 is located directly below the side portion 32b, that is, in the heat propagation path when the heat generated in the lower package 13 propagates to the heat radiating portion 32. Since the interlayer connection portion 24 has a high thermal conductivity, the heat generated in the lower package 13 can be efficiently propagated to the heat dissipation portion 32.
　上記に説明した第３実施形態に係る電子装置１によれば第１実施形態及び第２実施形態に係る電子装置１と同様の効果を奏する。更に、第３実施形態に係る電子装置１によれば、放熱部３２の厚さＬ１は、上パッケージ１１と下パッケージ１３を積層させた厚さＬ２よりも大きく設定されているため、電子装置１全体の強度が高くなり、電子装置１の反りを低減することができるとともに、放熱部３２の吸熱効果を向上させることができる。更に、層間接続部２４が下パッケージ１３から放熱部３２への熱の伝播経路に位置しているため、熱伝播効率を更に向上させることができる。従って、これにより信頼性が向上した電子装置を提供することができる。 According to the electronic device 1 according to the third embodiment described above, the same effect as that of the electronic device 1 according to the first embodiment and the second embodiment is obtained. Further, according to the electronic device 1 according to the third embodiment, the thickness L1 of the heat radiating portion 32 is set to be larger than the thickness L2 in which the upper package 11 and the lower package 13 are laminated, so that the electronic device 1 The overall strength is increased, the warp of the electronic device 1 can be reduced, and the heat absorption effect of the heat radiating unit 32 can be improved. Further, since the interlayer connection portion 24 is located in the heat propagation path from the lower package 13 to the heat dissipation portion 32, the heat propagation efficiency can be further improved. Therefore, it is possible to provide an electronic device with improved reliability.
　（第４実施形態）
　次に、第４実施形態について図４を参照して説明する。図４に示すように、第４実施形態に係る電子装置１においては、第１実施形態に係る電子装置１に比較して、放熱部３３の形状が異なっている。 (Fourth Embodiment)
Next, the fourth embodiment will be described with reference to FIG. As shown in FIG. 4, in the electronic device 1 according to the fourth embodiment, the shape of the heat radiating unit 33 is different from that of the electronic device 1 according to the first embodiment.
　第４実施形態において放熱部３３は、一方の端部、図において左側の側部が存在していない。図において右側の側部３３ｂは存在しており、図の右側においては、第１実施形態に係る電子装置１と同様に、放熱部３３は上パッケージ１０と下パッケージ１２との積層物を覆い、下パッケージ１２の側面はＴＩＭ１９を介して放熱部３３の側部３３ｂの内面に接している。第４実施形態に係る電子装置１によれば、第１から第３実施形態に係る電子装置１と同様の効果を奏する。更に、放熱部３３において図における左側の側部が無いため電子装置１のサイズを小さく構成することができる。 In the fourth embodiment, the heat radiating portion 33 does not have one end, that is, the left side portion in the figure. In the figure, the right side portion 33b exists, and on the right side of the figure, the heat radiating portion 33 covers the laminate of the upper package 10 and the lower package 12, as in the electronic device 1 according to the first embodiment. The side surface of the lower package 12 is in contact with the inner surface of the side portion 33b of the heat radiating portion 33 via the TIM 19. According to the electronic device 1 according to the fourth embodiment, the same effect as that of the electronic device 1 according to the first to third embodiments is obtained. Further, since the heat radiating portion 33 does not have the left side portion in the drawing, the size of the electronic device 1 can be reduced.
　（第５実施形態）
　次に、第５実施形態について図５を参照して説明する。図５に示すように、第５実施形態に係る電子装置１の構成のほとんどは第４実施形態に係る電子装置１と同様である。第５実施形態に係る電子装置１は以下の点で第４実施形態に係る電子装置１と異なっている。第５実施形態に係る電子装置１では、下パッケージ４０の下チップ４０ａの位置が放熱部３３の側部３３ｂ側に横方向に移動し、側部３３ｂに近接して配置されている。このように、下パッケージ４０の下チップ４０ａすなわち発熱源の位置を放熱部３３に更に近接させることにより、下パッケージ４０で発生した熱を効率的に放熱部３３に伝播させることができる。なお、下パッケージ４０は、下チップ４０ａ、上層４０ｂ、中間層４０ｃ、下層４０ｄを備えている。 (Fifth Embodiment)
Next, the fifth embodiment will be described with reference to FIG. As shown in FIG. 5, most of the configurations of the electronic device 1 according to the fifth embodiment are the same as those of the electronic device 1 according to the fourth embodiment. The electronic device 1 according to the fifth embodiment is different from the electronic device 1 according to the fourth embodiment in the following points. In the electronic device 1 according to the fifth embodiment, the position of the lower chip 40a of the lower package 40 is laterally moved toward the side portion 33b of the heat radiating portion 33, and is arranged close to the side portion 33b. By moving the position of the lower chip 40a of the lower package 40, that is, the heat generating source, closer to the heat radiating unit 33 in this way, the heat generated in the lower package 40 can be efficiently propagated to the heat radiating unit 33. The lower package 40 includes a lower chip 40a, an upper layer 40b, an intermediate layer 40c, and a lower layer 40d.
　第５実施形態によれば、第４実施形態に係る電子装置１と同様の効果を得る。また、放熱部３３への熱伝播効率を向上させることができるため、更に信頼性が向上した電子装置を提供することができるという効果を奏する。 According to the fifth embodiment, the same effect as that of the electronic device 1 according to the fourth embodiment is obtained. Further, since the heat transfer efficiency to the heat radiating unit 33 can be improved, it is possible to provide an electronic device having further improved reliability.
　（第６実施形態）
　次に、第６実施形態について図６を参照して説明する。図６に示すように、第６実施形態に係る電子装置１においては、第２実施形態に係る電子装置１に比較して、上パッケージ４１の位置、及び放熱部３４の形状が異なっている。上パッケージ４１は、上チップ４１ａ、上層４１ｂ、及び下層４１ｃを備えている。なお、上パッケージ４１は、さらに中間層を備える構成としてもよい。放熱部３４は、上部３４ａ、側部３４ｂ、下端部３４ｃを備えている。 (Sixth Embodiment)
Next, the sixth embodiment will be described with reference to FIG. As shown in FIG. 6, in the electronic device 1 according to the sixth embodiment, the position of the upper package 41 and the shape of the heat radiating portion 34 are different from those of the electronic device 1 according to the second embodiment. The upper package 41 includes an upper chip 41a, an upper layer 41b, and a lower layer 41c. The upper package 41 may be further provided with an intermediate layer. The heat radiating portion 34 includes an upper portion 34a, a side portion 34b, and a lower end portion 34c.
　第６実施形態において、上パッケージ４１は下パッケージ１３よりも横方向の幅が小さい。上パッケージ４１と下パッケージ１３は、図において左端位置が一致するように配置されている。このため、下パッケージ１３上には上パッケージ４１が載置されていない領域Ｐが存在する。 In the sixth embodiment, the upper package 41 has a smaller lateral width than the lower package 13. The upper package 41 and the lower package 13 are arranged so that the left end positions match in the figure. Therefore, there is an area P on the lower package 13 on which the upper package 41 is not placed.
　また、放熱部３４は、一方の側部すなわち図において左側の側部が存在してしない。図において右側の側部３４ｂは存在している。図６においては、第２実施形態に係る電子装置１と同様に、放熱部３４は下パッケージ４１の上部及び右側側部を覆うようにして接し、放熱部３４の下端部３４ｃは下パッケージ１３上面であって下パッケージ４１が載置されていない領域Ｐ上にＴＩＭ１９を介して接するようにして配置されている。 Further, the heat radiating portion 34 does not have one side portion, that is, the left side portion in the figure. In the figure, the right side portion 34b is present. In FIG. 6, similarly to the electronic device 1 according to the second embodiment, the heat radiating portion 34 is in contact with the lower package 41 so as to cover the upper portion and the right side portion, and the lower end portion 34c of the heat radiating portion 34 is the upper surface of the lower package 13. The lower package 41 is arranged so as to be in contact with the region P on which the lower package 41 is not placed via the TIM 19.
　更に、放熱部３４の側部３４ｂの横幅Ｗ２は、第２実施形態における側部３１ｂの幅Ｗ１よりも大きい。これにより、放熱部３４の下端部３４ｃと下パッケージ１３上面との接触面積を大きく設定できるため、下パッケージ１３から放熱部３４への熱伝播効率を向上させることができる。また、側部３４ｂの横幅Ｗ２を大きく設定しているため、放熱部３４の下端部３４ｃが下パッケージ１３の下チップ１３ａに近接することになる。また、下端部３４ｃの直下には層間接続部２４が配置されている。これによれば、層間接続部２４は、下チップ１３ａで発生した熱の伝播経路に存在するため、下チップ１３ａすなわち下パッケージ１３から放熱部３４への熱の伝播効率を向上させることができる。 Further, the lateral width W2 of the side portion 34b of the heat radiating portion 34 is larger than the width W1 of the side portion 31b in the second embodiment. As a result, the contact area between the lower end portion 34c of the heat radiating portion 34 and the upper surface of the lower package 13 can be set large, so that the heat transfer efficiency from the lower package 13 to the heat radiating portion 34 can be improved. Further, since the lateral width W2 of the side portion 34b is set large, the lower end portion 34c of the heat radiating portion 34 comes close to the lower chip 13a of the lower package 13. Further, an interlayer connection portion 24 is arranged directly below the lower end portion 34c. According to this, since the interlayer connection portion 24 exists in the heat propagation path generated by the lower chip 13a, the heat propagation efficiency from the lower chip 13a, that is, the lower package 13 to the heat radiating portion 34 can be improved.
　以上に説明したように、第６実施形態に係る電子装置１によれば、第４実施形態に係る電子装置１と同様の効果を得る。また、下パッケージ１３から放熱部３４への熱伝播効率を向上させることができるため、更に信頼性が向上した電子装置を提供することができるとともに、電子装置１のサイズを小さく構成することができるという効果を奏する。 As described above, according to the electronic device 1 according to the sixth embodiment, the same effect as that of the electronic device 1 according to the fourth embodiment is obtained. Further, since the heat transfer efficiency from the lower package 13 to the heat radiating unit 34 can be improved, it is possible to provide an electronic device with further improved reliability, and the size of the electronic device 1 can be reduced. It plays the effect.
　（第７実施形態）
　次に、第７実施形態について図７を参照して説明する。図７に示すように、第７実施形態に係る電子装置１においては、第６実施形態に係る電子装置１に比較して、下パッケージ４２の下チップ４２ａの位置を、図において右側すなわちより放熱部３４の下端部３４ｃに近接する横方向に移動させている。下パッケージ４２は、下チップ４２ａ、及び、上層４２ｂ、中間層４２ｃ及び下層４２ｄを備える多層構造を備えている。こうすることで、下チップ４２ａの少なくとも一部を、下端部３４ｃの直下に位置させる。また、下パッケージ４２の上層４２ｂであって下端部３４ｃの直下、かつ、下チップ４２ａの直上に位置して、熱拡散部２６が設けられている。 (7th Embodiment)
Next, the seventh embodiment will be described with reference to FIG. 7. As shown in FIG. 7, in the electronic device 1 according to the seventh embodiment, the position of the lower chip 42a of the lower package 42 is set to the right side in the figure, that is, more heat dissipation than the electronic device 1 according to the sixth embodiment. It is moved in the lateral direction close to the lower end portion 34c of the portion 34. The lower package 42 has a multilayer structure including a lower chip 42a, an upper layer 42b, an intermediate layer 42c, and a lower layer 42d. By doing so, at least a part of the lower tip 42a is positioned directly below the lower end 34c. Further, the heat diffusion portion 26 is provided in the upper layer 42b of the lower package 42, located directly below the lower end portion 34c and directly above the lower chip 42a.
　熱拡散部２６は、上層４２ｂに貫通孔を設け、貫通孔内に例えば銅などの金属を埋め込んで形成した貫通電極として構成される。熱拡散部２６は、熱拡散部２６の周囲の材料、例えばモールド樹脂よりも熱伝導率が大きくなるように構成されるため、熱拡散部２６は熱伝播効率が高く設定されている。従って、下パッケージ４２の発熱源である下チップ４２ａにおいて発生した熱は、下チップ４２ａの直上に位置する熱拡散部２６を介して伝播することにより効率的に放熱部３４に伝播する。なお、熱拡散部２６は、中間層４２ｃに設けてもよい。 The heat diffusion portion 26 is configured as a through electrode formed by providing a through hole in the upper layer 42b and embedding a metal such as copper in the through hole. Since the heat diffusion unit 26 is configured to have a higher thermal conductivity than the material around the heat diffusion unit 26, for example, a mold resin, the heat diffusion unit 26 is set to have a high heat transfer efficiency. Therefore, the heat generated in the lower chip 42a, which is the heat generation source of the lower package 42, propagates to the heat radiating unit 34 efficiently by propagating through the heat diffusion unit 26 located directly above the lower chip 42a. The heat diffusion unit 26 may be provided in the intermediate layer 42c.
　第７実施形態に係る電子装置１によれば、第４実施形態に係る電子装置１と同様の効果を得る。また、熱の発生源である下チップ４２ａの直上に近接して、熱拡散部２６、ＴＩＭ１９、及び下端部３４ｃが配置されるため、下パッケージ４２から放熱部３４への熱伝播効率を更に向上させることができる。 According to the electronic device 1 according to the seventh embodiment, the same effect as that of the electronic device 1 according to the fourth embodiment is obtained. Further, since the heat diffusion portion 26, the TIM19, and the lower end portion 34c are arranged immediately above the lower chip 42a, which is a heat generation source, the heat transfer efficiency from the lower package 42 to the heat dissipation portion 34 is further improved. Can be made to.
　（第８実施形態）
　次に、第８実施形態について図８を参照して説明する。図８に示すように、第８実施形態に係る電子装置１においては、下パッケージ１３上に放熱部３５が配置され、その上に上パッケージ１１が配置される。放熱部３５は、無蓋有底で上部が開放された矩形箱型形状を呈しており、側部３５ａと底部３５ｂを備えている。底部３５ｂにははんだボール２０を貫通させる貫通孔が設けられており、これによりはんだボール２０は上パッケージ１１と下パッケージ１３とを接続している。上記に説明した構成によれば、上パッケージ１１と下パッケージ１３との間に放熱部３５が配置されるため、下パッケージ１３の発熱が大きく、上パッケージ１１が熱に弱い場合に、下パッケージ１３で発生した熱が上パッケージ１１に伝播することが抑制される。また、側部３５ａの直下に下パッケージ１３の層間接続部２４が配置されるため、下パッケージ１３で発生した熱が放熱部３５を介して金属ケース１４に伝播する効率が向上される。 (8th Embodiment)
Next, the eighth embodiment will be described with reference to FIG. As shown in FIG. 8, in the electronic device 1 according to the eighth embodiment, the heat radiating portion 35 is arranged on the lower package 13, and the upper package 11 is arranged on the heat radiating portion 35. The heat radiating portion 35 has a rectangular box shape with an open bottom and an open top, and includes a side portion 35a and a bottom portion 35b. The bottom portion 35b is provided with a through hole through which the solder ball 20 penetrates, whereby the solder ball 20 connects the upper package 11 and the lower package 13. According to the configuration described above, since the heat radiating portion 35 is arranged between the upper package 11 and the lower package 13, when the lower package 13 generates a large amount of heat and the upper package 11 is weak against heat, the lower package 13 is generated. It is suppressed that the heat generated in the above package 11 is propagated to the upper package 11. Further, since the interlayer connection portion 24 of the lower package 13 is arranged directly below the side portion 35a, the efficiency of propagating the heat generated in the lower package 13 to the metal case 14 via the heat radiating portion 35 is improved.
　第８実施形態に係る電子装置１によれば、第１実施形態に係る電子装置１と同様の効果を得る。また、放熱部３５により下パッケージ１３で発生した熱が上パッケージ１１に伝播することが抑制されるため、特に上パッケージ１１が熱に対して弱い場合に、更に信頼性が向上した電子装置を提供することができる。 According to the electronic device 1 according to the eighth embodiment, the same effect as that of the electronic device 1 according to the first embodiment is obtained. Further, since the heat radiating unit 35 suppresses the heat generated in the lower package 13 from propagating to the upper package 11, an electronic device having further improved reliability is provided, especially when the upper package 11 is weak against heat. can do.
　本開示は、実施例に準拠して記述されたが、本開示は当該実施例や構造に限定されるものではないと理解される。本開示は、様々な変形例や均等範囲内の変形をも包含する。加えて、様々な組み合わせや形態、さらには、それらに一要素のみ、それ以上、あるいはそれ以下、を含む他の組み合わせや形態をも、本開示の範疇や思想範囲に入るものである。 Although this disclosure has been described in accordance with the examples, it is understood that the disclosure is not limited to the examples and structures. The present disclosure also includes various modifications and modifications within an equal range. In addition, various combinations and forms, as well as other combinations and forms that include only one element, more, or less, are also within the scope of the present disclosure.

Claims (6)

  1. 　上チップ（１０ａ、４１ａ）を備える上パッケージ（１０、１１、４１）と、
    　下チップ（１２ａ、１３ａ、４０ａ、４２ａ）を備える下パッケージ（１２、１３、４０、４２）と、
    　前記上パッケージ、及び前記下パッケージを上部に積層して備えるプリント基板（１６）と、
    　熱を外部に放熱する金属ケース（１４）に接する放熱部（３０、３１、３２、３３、３４、３５）と、を備え、
    　前記放熱部は、前記上パッケージ及び前記下パッケージに接する電子装置。     An upper package (10, 11, 41) with an upper tip (10a, 41a) and
    A lower package (12, 13, 40, 42) with a lower tip (12a, 13a, 40a, 42a) and
    A printed circuit board (16) provided with the upper package and the lower package laminated on the upper surface.
    It is provided with a heat radiating portion (30, 31, 32, 33, 34, 35) in contact with a metal case (14) that radiates heat to the outside.
    The heat radiating portion is an electronic device in contact with the upper package and the lower package.
  2. 　前記放熱部（３１、３２、３４、３５）は、前記下パッケージ（１２）の上面で接続される請求項１に記載の電子装置。 The electronic device according to claim 1, wherein the heat radiating unit (31, 32, 34, 35) is connected to the upper surface of the lower package (12).
  3. 　前記下チップ（４０ａ、４２ａ）の位置を横方向に移動させて配置することで、前記下チップを前記放熱部（３３、３４）に近接させる請求項１または２に記載の電子装置。 The electronic device according to claim 1 or 2, wherein the lower chip (40a, 42a) is arranged by moving the position in the lateral direction so that the lower chip is brought close to the heat radiating portion (33, 34).
  4. 　前記下パッケージ（１３、４２）は、複数の層を有する多層構造であってこの複数の層間を接続する層間接続部（２４）を備えており、
    　前記放熱部（３２、３４、３５）は、前記下パッケージと、前記下パッケージに設けられた前記層間接続部の直上の位置で接続されている請求項１から３の何れか一項に記載の電子装置。     The lower package (13, 42) has a multi-layer structure having a plurality of layers and includes an interlayer connection portion (24) for connecting the plurality of layers.
    The method according to any one of claims 1 to 3, wherein the heat radiating portion (32, 34, 35) is connected to the lower package at a position directly above the interlayer connection portion provided in the lower package. Electronic device.
  5. 　放熱部（３２）の厚さは、前記上パッケージ（１１）と下パッケージ（１３）とが積層された厚さよりも大きい、請求項１から４の何れか一項に記載の電子装置。 The electronic device according to any one of claims 1 to 4, wherein the thickness of the heat radiating portion (32) is larger than the thickness of the upper package (11) and the lower package (13) laminated.
  6. 　下チップの発熱量は、上チップの発熱量よりも大きい、請求項１から５の何れか一項に記載の電子装置。
          The electronic device according to any one of claims 1 to 5, wherein the calorific value of the lower chip is larger than the calorific value of the upper chip.
PCT/JP2020/010550 2019-04-03 2020-03-11 Electronic device WO2020203123A1 (en)

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JP2006210892A (en) * 2004-12-27 2006-08-10 Nec Corp Semiconductor device
JP2010252210A (en) * 2009-04-20 2010-11-04 Seiko Epson Corp Temperature compensation type piezoelectric oscillator

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KR102184989B1 (en) * 2013-09-11 2020-12-01 삼성전자주식회사 Semiconductor package And Method Of Fabricating The Same

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JP2003188342A (en) * 2001-12-19 2003-07-04 Sony Corp Semiconductor device
JP2004031650A (en) * 2002-06-26 2004-01-29 Sony Corp Leadless package and semiconductor device
JP2006210892A (en) * 2004-12-27 2006-08-10 Nec Corp Semiconductor device
JP2010252210A (en) * 2009-04-20 2010-11-04 Seiko Epson Corp Temperature compensation type piezoelectric oscillator

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