WO2020195636A1

WO2020195636A1 - Wafer-mounting structure, wafer-mounting device and substrate structure

Info

Publication number: WO2020195636A1
Application number: PCT/JP2020/009111
Authority: WO
Inventors: 保典川邊; 和多田　一雄
Original assignee: 京セラ株式会社
Priority date: 2019-03-22
Filing date: 2020-03-04
Publication date: 2020-10-01
Also published as: JPWO2020195636A1

Abstract

This wafer-mounting structure is equipped with an insulative substrate, a conductor positioned inside the substrate, and a terminal. The terminal has first and second ends, and has a length which extends from the first end to the second end. The first end is located inside the substrate, and the second end is located outside the substrate. The terminal has a recess which is oriented toward the second end side from the first end. The floor of the recess is shaped so as to slant toward the second end side from the peripheral edges of the floor toward the center of the floor.

Description

Wafer mounting structure, wafer mounting device and substrate structure

The present disclosure relates to a wafer mounting structure, a wafer mounting device using the wafer mounting structure, and a substrate structure.

For example, in a semiconductor manufacturing apparatus for manufacturing a semiconductor, a wafer mounting structure on which a wafer is mounted is used. As the wafer mounting structure, for example, Patent Document 1 (wafer support member) and Patent Document 2 (electrode built-in body) are known.

Japanese Unexamined Patent Publication No. 2003-224181 JP-A-2002-141404

The wafer mounting structure according to one aspect of the present disclosure includes an insulating substrate, a conductor located in the substrate, and terminals. The terminal has a first end and a second end, and has a length extending from the first end to the second end. The first end is located inside the substrate and the second end is located outside the substrate. The terminal has a recess toward the second end side from the first end. The bottom portion of the recess has a shape that is inclined toward the second end side from the peripheral edge of the bottom portion toward the center of the bottom portion.

The wafer mounting device according to one aspect of the present disclosure includes the wafer mounting structure described above, a power supply unit capable of supplying power to the conductor, and a control unit that controls power supply of the power supply unit. are doing.

The substrate structure according to one aspect of the present disclosure includes an insulating substrate, a conductor located in the substrate, and terminals. The terminal has a first end and a second end, and has a length extending from the first end to the second end. The first end is located inside the substrate and the second end is located outside the substrate. The terminal has a recess toward the second end side from the first end. The bottom portion of the recess has a shape that is inclined toward the second end side from the peripheral edge of the bottom portion toward the center of the bottom portion.

It is a schematic perspective view of the wafer mounting apparatus according to 1st Embodiment. FIG. 2 is a sectional view taken along line II-II of the wafer mounting device shown in FIG. FIG. 3 is an enlarged view of III shown in FIG. 4 (a) and 4 (b) are cross-sectional views around terminals of the wafer mounting structure in the second embodiment and the third embodiment. 5 (a) and 5 (b) are diagrams illustrating the operation of the terminals shown in FIG. 4 (a). 6 (a) and 6 (b) are cross-sectional views around terminals of the wafer mounting structure according to the fourth embodiment and the fifth embodiment. 7 (a) and 7 (b) are cross-sectional views around terminals of the wafer mounting structure in the sixth embodiment and the seventh embodiment. It is a figure which showed the modification of the terminal shown in FIG.

The embodiment of the present disclosure will be described below with reference to the attached figure. In the description, the top and bottom refer to the top and bottom based on the state in which the wafer is mounted on the wafer mounting structure. Further, in the figure, Up is shown above and Dn is shown below. It should be noted that each of the drawings to be referred to is schematically shown, and details may be omitted.

[First Embodiment]
See FIG. The wafer mounting device 10 includes a wafer mounting structure 20 (base structure 20) having an A surface 40a on which a wafer is mounted, a power supply unit 11 that supplies electric power to the wafer mounting structure 20, and the power supply unit 11. It has a control unit 13 that controls the power supply unit 11.

(Wafer mounting structure)
See FIG. In FIG. 2, the wafer mounting structure 20 includes a shaft member 30, an insulating base 40 fixed to the upper end of the shaft member 30, a conductor 21 located in the base 40, and the conductor 21. It has a terminal 50 electrically connected to the terminal 50 and a connecting portion 22 having one end connected to the terminal 50.

(Shaft member)
In the example shown in FIG. 2, the shaft member 30 has a rod shape, and the upper end thereof is continuous with the substrate 40. The upper end of the shaft member 30 is adhered to the substrate 40 with, for example, an adhesive.

The shaft member 30 has through holes 31 penetrating vertically in the drawing in the shaft member 30 alone. The through hole 31 opens at the upper end and the lower end in the drawing of the shaft member 30 alone. The expressions "upper end" and "lower end" are only used for convenience in the explanation in relation to the figure. Therefore, the use of the terms upper end and lower end in the present disclosure does not limit the use to the upper end in the vertical direction. That is, the upper end can be replaced with the expression of one end (one end) of the shaft member 30, or the lower end can be replaced with the other end (other end) of the shaft member 30. Hereinafter, the upper end and the lower end, which are described in the detailed description, are described with the above meanings.

The size of the diameter of the through hole 31 may be the same from the upper end to the lower end of the shaft member 30. In another aspect, the size of the diameter of the through hole 31 may be different from the upper end to the lower end of the shaft member 30. The shape of the through hole 31 has a circular shape in the cross section of the shaft member 30 perpendicular to the direction in which the through hole 31 extends. In other embodiments, the shape of the through hole 31 may be elliptical, triangular, rectangular or the like. A connecting portion 22 passes through the through hole 31.

The material of the shaft member 30 is, for example, an insulating ceramic. In other embodiments, the material of the shaft member 30 is a conductive material (such as metal).

(Base)
The substrate 40 is made of an insulating material such as ceramic. The ceramic constituting the substrate 40 is mainly composed of, for example, aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ , alumina), silicon carbide (SiC), silicon nitride (Si ₃ N ₄ ) and the like. The main component referred to here is, for example, a component that accounts for 50% by mass or more or 80% by mass or more of 100% by mass of all the components constituting the substrate 40.

In the example shown in FIG. 2, the substrate 40 is a flat plate-like substrate having a thickness in the vertical direction. The substrate 40 may have a circular shape, an elliptical shape, a rectangular shape, a trapezoidal shape, or the like in a plan view. The dimensions of the substrate 40 are, for example, 20 cm or more and 40 cm or less in diameter and 5 mm or more and 35 mm or less in thickness when the shape in a plan view is circular. However, the substrate 40 is not limited to the flat substrate.

Refer to FIGS. 2 and 3. The substrate 40 has an A surface 40a on which the wafer is placed, a B surface 40b forming a surface opposite to the A surface 40a, and one end (first end 51) of the terminal 50 on the B surface 40b side. ) Is located in the insertion portion 41.

The A surface 40a constitutes the upper surface of the substrate 40, and an object such as a wafer is placed on the surface A 40a. The B surface 40b constitutes the lower surface of the substrate 40 and is continuous with the shaft member 30. The insertion portion 41 has an opening 42 on the B surface 40b, and the edge of the opening 42 surrounds the terminal 50.

The substrate 40 may have a flow path inside through which a fluid for cooling the mounted wafer and / or a fluid heated by a resistance heating element described later passes. The shape and size of the flow path can be appropriately changed according to the purpose of use of the flow path. That is, the shape and size of the flow path can be determined by various types of fluids consisting of gas or liquid, which are flowed according to the purpose of use.

(Insert part)
See FIG. The insertion portion 41 is a recess (for example, a cylindrical recess) located below the substrate 40. A part of the terminal 50 is inserted into the insertion portion 41. The inner diameter of the insertion portion 41 may be slightly smaller than the outer diameter of the terminal 50. The spatial shape of the recess that becomes the insertion portion 41 before the terminal 50 is inserted is not limited to the cylindrical shape, but may be a cubic shape or the like. That is, the spatial shape of the recess serving as the insertion portion 41 is arbitrary.

The insertion portion 41 has an inner surface portion 41a extending upward from the opening 42, and a bottom surface portion 41b continuous with the upper end of the inner surface portion 41a and forming the bottom of the insertion portion 41.

(conductor)
See FIG. The conductor 21 may be a resistance heating element that generates heat by the electric power from the power supply unit 11. If the conductor 21 is a resistance heating element, the heat generated by the resistance heating element heats the wafer placed on the A surface 40a. That is, it can be said that the wafer mounting structure 20 is a heater. The conductor 21 may be, for example, a coil containing a conductor, a layered conductor, or the like.

The conductor 21 may have a spiral shape or a meander shape, for example, in a plan view of the substrate 40. The conductor 21 extends over the entire area of the substrate 40 along the A surface 40a. As a result, the temperature of the entire A surface 40a can be raised. The conductor 21 is made of, for example, an alloy containing W, Mo, Pt or the like as a main component.

(Terminal)
See FIGS. 2 and 3. The terminal 50 is electrically connected to the power supply unit 11 via the connection unit 22. The terminal 50 is partially or wholly made of a conductive material. The material constituting the terminal 50 can be appropriately set. In one embodiment, the material of the terminal 50 can be the same as the material of the conductor 21 and / or the connecting portion 22. In one embodiment, the material of the terminal 50 can be different from the material of the conductor 21 and / or the connection 22. The material of the terminal 50 is, for example, W, Mo, Pt, or the like.

The terminal 50 is, for example, a metal (bulk material) having a certain length in the vertical direction. One end of the terminal 50 is located inside the insertion portion 41, and the other end is located outside the insertion portion 41 (outside the insertion portion 41). The shape of the terminal 50 is arbitrary. For example, the portion of the terminal 50 located outside the substrate 40 (outside the substrate 40) may be longer or shorter than the portion located inside the substrate 40 of the terminal 50. The outer diameter of the terminal 50 may be the same from one end to the other end, or may be different in some places. Further, the outer diameter of the terminal 50 may be different on the upper and lower sides with reference to the flange portion 54 described later. The terminal 50 may have a circular shape, an elliptical shape, a rectangular shape, or the like in a cross section perpendicular to the direction in which the terminal 50 extends.

Here, attention is paid only to the portion of the terminal 50 located in the substrate 40. The portion of the terminal 50 located in the substrate 40 has, for example, a cylindrical shape. As another aspect, the portion of the terminal 50 located in the substrate 40 may be tapered toward the bottom surface portion 41b. The tapered shape here means a shape in which the outer diameter of the portion of the terminal 50 located in the substrate 40 becomes smaller toward the bottom surface portion 41b. As a result, the terminal 50 can be easily inserted into the substrate 40 (the same applies to the unsintered substrate before firing). As another aspect, the portion of the terminal 50 located in the substrate 40 may have a reverse taper shape toward the bottom surface portion 41b. The reverse taper shape here is a shape in which the outer diameter of the portion of the terminal 50 located in the substrate 40 increases toward the bottom surface portion 41b. As a result, the fixing member Fi described later can be easily arranged between the inner surface portion 41a and the first outer wall 53a (the same applies to the unsintered substrate before firing). As described above, the shape of the portion of the terminal 50 located in the substrate 40 is also arbitrary.

At least a part of the terminal 50 is located in the substrate 40. As one embodiment, a part of the terminal 50 is fixed in the insertion portion 41 via a fixing member Fi (for example, a brazing material). In one embodiment, a portion of the terminal 50 is fitted into the insertion portion 41 and is located within the substrate 40. As one embodiment, a part of the terminal 50 is embedded in the insertion portion 41 and is located in the substrate 40. In addition, a part of the terminal 50 may be embedded in the insertion portion 41 and fixed by the fixing member Fi. As a result, the terminal 50 is held on the substrate 40. The terminal 50 is electrically connected to the conductor 21 located in the substrate 40.

A part of the terminal 50 is located in the through hole 31 and is surrounded by the inner surface of the shaft member 30. As a result, the possibility that the terminal 50 is directly exposed to the outside air is low.

The terminal 50 includes a first end 51 forming one end (upper end in the drawing) of the terminal 50, and a second end 52 forming the other end (lower end in the drawing) opposite to the first end 51. An outer wall 53 connecting the first end 51 and the second end 52, a flange portion 54 protruding outward from the outer wall 53, and an opening to the first end 51 from the first end 51 to the second end 52 side. It has a recess 55 that dents toward. The terminal 50 has a length extending from the first end 51 to the second end 52.

The first end 51 is located in the substrate 40. The first end 51 faces the bottom surface portion 41b. Above the first end 51, there is a gap 40c. The gap 40c is located between the bottom surface portion 41b and the first end 51. The inside of the gap 40c may be in a vacuum state, may be filled with an inert gas, or may be filled with a material such as the fixing member Fi. Further, the void 40c may be eliminated if necessary.

The second end 52 is located outside the substrate 40.

The outer wall 53 has a first outer wall 53a located inside the insertion portion 41 (base 40), and a second outer wall 53b continuous with the first outer wall 53a and located outside the insertion portion 41. The outer wall 53 constitutes a surface of the terminal 50 in the circumferential direction.

The first outer wall 53a is adhered to the inner surface portion 41a via, for example, the fixing member Fi. As a result, the terminal 50 is held on the substrate 40. The fixing member Fi is an adhesive material made of a conductive organic material or an inorganic material. Since the fixing member Fi is conductive, the terminal 50 is electrically connected to the conductor 21. The fixing member Fi may be located over the entire circumference of the first outer wall 53a, or may be located only in a part thereof. Further, the terminal 50 may be held by the substrate 40 by fitting a part of the terminal 50 into the insertion portion 41 or embedding a part of the terminal 50 in the insertion portion 41 without using the fixing member Fi. it can.

(Tsuba)
The collar portion 54 projects outward from the second outer wall 53b. That is, it can be said that the flange portion 54 protrudes outside the substrate 40 in a direction intersecting the first direction Li from the first end 51 to the second end 52. In one embodiment, the collar portion 54 projects in a direction perpendicular to the second outer wall 53b (first direction Li). The flange portion 54 may be in contact with the fixing member Fi, may be in contact with the B surface 40b without passing through the fixing member Fi, or may not be in contact with the fixing member Fi. The position of the collar portion 54 is arbitrary.

In the example shown in FIG. 3, the collar portion 54 includes a first surface 54a facing the B surface 40b of the substrate 40, a second surface 54b located on the opposite side of the first surface 54a, and the first surface 54a and the first surface 54a. It has a third surface 54c that connects the second surface 54b.

In the illustrated example, the first surface 54a may be parallel to the B surface 40b. The first surface 54a may be located farther from the substrate 40 than the B surface 40b. As another aspect, the first surface 54a may be inclined by a predetermined angle with respect to the B surface 40b.

In the illustrated example, the first surface 54a is adhered to the B surface 40b via the fixing member Fi. In another aspect, the first surface 54a is not adhered to the B surface 40b.

In the illustrated example, the second surface 54b may be parallel to the first surface 54a. As another aspect, the second surface 54b may be inclined by a predetermined angle with respect to the first surface 54a.

(Recess)
In the example shown in FIG. 3, the recess 55 is a cavity from the first end 51 to the second end 52 of the terminal 50. When the inside of the recess 55 is hollow, the inside of the recess 55 may be a vacuum or may be filled with an inert gas. As another aspect, the inside of the recess 55 may be filled with another material (for example, a material having a composition different from that of the fixing member Fi or the terminal 50). The material having a composition different from that of the terminal 50 is a material having a smaller load on the substrate 40 even if it is thermally expanded, as compared with the material constituting the terminal 50 itself. A material having a composition different from that of the terminal 50 has a coefficient of linear expansion and / or Young's modulus different from that of the material constituting the terminal 50. For example, a material having a composition different from that of the terminal 50 has a coefficient of linear expansion closer to that of the substrate 40 than a material constituting the terminal 50. Further, the material having a composition different from that of the terminal 50 has a smaller Young's modulus than the material constituting the terminal 50.

The recess 55 has an inner wall 55a that faces from the first end 51 to the second end 52 of the terminal 50, and a bottom portion 55b that is continuous with the inner wall 55a and constitutes the bottom of the recess 55. In the illustrated example, the value of the depth of the recess 55 is larger than the value of the inner diameter of the recess 55. However, the value of the depth of the recess 55 may be smaller than the value of the inner diameter of the recess 55.

(inner wall)
The inner wall 55a is a portion of the elements constituting the recess 55 that faces from the first end 51 to the bottom 55b. The upper part of the inner wall 55a is continuous with the first end 51, and the lower part of the inner wall 55a is continuous with the bottom 55b. The inner wall 55a may be parallel to the first outer wall 53a and the second outer wall 53b (outer wall 53). From another point of view, the inner wall 55a may be perpendicular to the B surface 40b.

A part of the inner wall 55a is located outside the substrate 40.

The shape of the recess 55 in a plan view is arbitrary. The shape of the recess 55 in a plan view may be a circular shape, an elliptical shape, a rectangular shape, or the like. The inner diameter of the inner wall 55a may be, for example, 1/4 or more of the outer diameter of the outer wall 53, 1/2 or more of the outer diameter of the outer wall 53, or the outer wall 53. It may be 3/4 or more of the outer diameter in. The inner wall 55a may have the same inner diameter or different inner diameters from the upper part to the lower part.

(bottom)
The bottom portion 55b is a portion of the elements constituting the recess 55, which is located closest to the second end 52 side. In the example shown in FIG. 3, the bottom portion 55b is inclined toward the second end 52 side from the peripheral edge of the bottom portion 55b toward the center of the bottom portion 55b. More specifically, the bottom portion 55b may have a conical shape in which the inner diameter increases toward the first end 51. The tilt angle of the bottom 55b is arbitrary.

The bottom portion 55b includes a portion located outside the substrate 40. More specifically, the bottom 55b includes a portion that is entirely located outside the substrate 40 and is located farther from the substrate 40 than the first surface 54a. The portion of the bottom 55b closest to the second end 52 is located between the first surface 54a and the second surface 54b. The position of the peripheral edge of the bottom 55b is arbitrary. When the entire bottom portion 55b is located below the B surface 40b as in the present embodiment, the peripheral edge of the bottom portion 55b may be located between the B surface 40b and the first surface 54a. , May be located between the first surface 54a and the second surface 54b.

The depth of the bottom portion 55b (the value of the distance from the portion of the bottom portion 55b on the first end 51 side to the portion of the bottom portion 55b on the second end 52 side along the first direction Li) is arbitrarily set. The depth of the bottom portion 55b may be, for example, 1/2 or less, 1/4 or less, 1/8 or less, or 1/1 of the depth of the recess 55. It may be 16 or less. The depth of the bottom portion 55b may be ½ or more of the depth of the recess 55.

(Connection part)
See FIG. The upper end of the connection unit 22 is connected to the terminal 50, and the lower end is connected to the power supply unit 11. The connection unit 22 connects the power supply unit 11 and the terminal 50 so as to be energized. The connecting portion 22 contains a conductive material.

(Power supply unit)
The power supply unit 11 is located outside the substrate 40 and supplies electric power to the conductor 21 (for example, a resistance heating element) via the connection unit 22. The power supply unit 11 is electrically connected to the conductor 21 via the connection unit 22. The power supply unit 11 includes a power supply circuit that converts the electric power supplied from the power source into an appropriate voltage and supplies the voltage to the conductor 21.

(Control unit)
The control unit 13 controls the supply of electric power to the conductor 21 in the power supply unit 11. For example, when the control unit 13 controls the power supply unit 11, the resistance heating element generates heat. The heat generated by the resistance heating element heats the wafer placed on the A surface 40a.

Refer to FIGS. 2 and 3. The bottom portion 55b of the recess 55 has a shape that is inclined toward the second end 52 side from the peripheral edge of the bottom portion 55b toward the center of the bottom portion 55b. Therefore, the recess 55 is deeper by the amount that the bottom 55b faces the second end 52 side, as compared with the case where the bottom 55b has a flat shape. As a result, it is possible to read by replacing the expression "expansion" with "contraction", which includes thermal expansion (including thermal contraction) of the portion of the terminal 50 on the first end 51 side, as compared with the case where the bottom portion 55b has a planar shape. It is possible to reduce.). As a result, the load on the substrate 40 by the terminal 50 can be reduced.

The bottom portion 55b of the recess 55 includes a portion located outside the substrate 40. Since the bottom portion 55b includes a portion located outside the substrate 40, the recess 55 becomes deeper. Therefore, the thermal expansion of the portion of the terminal 50 on the first end 51 side can be further reduced. In addition, the load applied to the lower surface 40B of the substrate 40 is reduced. As a result, the load on the substrate 40 by the terminal 50 can be further reduced.

The bottom portion 55b includes a portion located farther from the substrate 40 than the first surface 54a. As a result, the portion of the recess 55 located outside the substrate 40 becomes even larger. As a result, the burden on the substrate 40 by the terminal 50 can be further reduced.

The bottom portion 55b has a conical shape in which the inner diameter increases toward the first end 51. Thereby, the load on the substrate 40 by the terminal 50 can be reduced.

In addition, for example, the bottom 55b can be easily formed by pressing a rotating body with a sharp tip such as a drill. As a result, the production efficiency of the wafer mounting structure 20 can be improved.

The wafer mounting structure 20 is a heater in which the

conductors

21 and 21A include a resistance heating element. As a result, the wafer can be heated with the wafer placed on it.

The wafer mounting device 10 includes the wafer mounting structure 20 described above, a power supply unit 11 capable of supplying power to the conductor 21, and a control unit 13 for controlling the power supply of the power supply unit 11. .. This makes it possible to provide the wafer mounting device 10 in which the load on the substrate 40 is reduced.

[Second Embodiment]
See FIG. 4 (a). FIG. 4A is a diagram showing a second embodiment in the present disclosure, and corresponds to FIG. 3 above. The wafer mounting structure 20A in the second embodiment has different positions of the conductor 21A and the bottom 55Ab in relation to the first embodiment. Other specific structures are common to the wafer mounting structure 20 according to the first embodiment. For the parts common to the first embodiment, reference numerals are used and detailed description thereof will be omitted.

The conductor 21A is located above the terminal 50A and is in contact with the first end 51. The conductor 21A may be in contact with the first end 51 via the fixing member Fi. The conductor 21A is also applicable to other embodiments.

The entire inner wall 55Aa is located in the base 40 (insertion portion 41). The length of the inner wall 55Aa may be 9/10 or less, or 2/3 or less, with respect to the length of the portion located in the substrate of the terminal (the length along the first direction Li). It may be 1/3 or less. The length of the inner wall 55Aa is arbitrary.

The bottom 55Ab includes a portion located within the substrate 40. More specifically, the entire bottom 55Ab is located within the substrate 40.

Here, the operation of this embodiment will be described.

Refer to FIG. 5 (a). FIG. 5A is a diagram showing a terminal 150 whose bottom portion 155b is perpendicular to the inner wall 155a. Since the bottom portion 155b is perpendicular to the inner wall 155a, there is a large difference in the cross-sectional area (horizontal cross section) of the terminal 150 above and below the boundary between the inner wall 155a and the bottom portion 155b. The cross section of the terminal 150 is small above the boundary and large below the boundary. When the terminal 150 is thermally expanded, there is a difference in thermal stress above and below the boundary.

Refer to FIG. 5 (b). FIG. 5B shows a terminal 50A whose bottom 55Ab is inclined with respect to the inner wall 55Aa. The bottom portion 55Ab is inclined toward the second end 52 side from the peripheral edge of the bottom portion 55Ab toward the center of the bottom portion 55Ab. Further, the bottom 55Ab also includes a portion located within the substrate 40. The terminal 50A includes a portion where the cross section gradually increases toward the outside of the substrate 40. As a result, it is possible to prevent a large difference in the volume expansion of the terminal 50A (difference in volume expansion selected from any two locations near the bottom 55Ab) in the vicinity of the bottom 55Ab. As a result, when the terminal 50A thermally expands, the difference in thermal stress can be relaxed as compared with the wafer mounting structure 120 shown in FIG. 5A. As a result, the load on the substrate 40 by the terminal 50A can be reduced.

[Third Embodiment]
See FIG. 4 (b). FIG. 4B is a diagram showing a third embodiment in the present disclosure. Similar to the above, the wafer mounting structure 20B in the third embodiment corresponds to FIG. 3 shown above. For the parts common to the first embodiment, reference numerals are used and detailed description thereof will be omitted.

The entire inner wall 55Ba is located in the base 40 (insertion portion 41). The length of the inner wall 55Ba is arbitrary. The length of the inner wall 55Ba may be 9/10 or less, or 2/3 or less, with respect to the length of the portion of the terminal 50B located in the substrate 40 (the length along the first direction Li). It may be 1/3 or less.

The bottom 55Bb includes a portion located within the substrate 40. More specifically, the entire bottom 55Bb is located within the substrate 40.

At least a part of the bottom 55Bb or the entire bottom 55Bb is a curved surface. In another aspect, the bottom 55Bb has a curved cross section along the direction from the first end 51 to the second end 52. As a result, the load on the substrate 40 by the terminal 50B is reduced. The bottom 55Bb has, for example, a hemispherical shape. The curvature of the bottom 55Bb is arbitrary.

In the first embodiment, it is described that the bottom portion 55Bb is a portion of the elements constituting the recess 55B that is located on the second end 52 side and faces the first end 51 side. However, in the present embodiment, the boundary between the inner wall 55Ba and the bottom 55Bb may be unclear. In such a case, the first portion where the inner diameter of the recess 55B gradually decreases in the direction from the first end 51 to the second end 52 may be the peripheral edge of the bottom 55Bb (the starting portion of the bottom 55Bb). it can.

[Fourth Embodiment]
See FIG. 6 (a). FIG. 6A is a diagram showing a fourth embodiment in the present disclosure. Similarly to the above, the wafer mounting structure 20C in the fourth embodiment corresponds to FIG. 3 shown above. For the parts common to the first embodiment, reference numerals are used and detailed description thereof will be omitted.

The bottom portion 55Cb includes a portion located farther from the substrate 40 than the second surface 54b. Since the bottom portion 55Cb includes a portion located farther from the base 40 than the second surface 54b, the portion on the first end 51 side of the terminal 50C is likely to be elastically deformed. As a result, the burden on the substrate 40 is reduced.

[Fifth Embodiment]
See FIG. 6 (b). FIG. 6B is a diagram showing a fifth embodiment in the present disclosure. Similarly to the above, the wafer mounting structure 20D in the fifth embodiment corresponds to FIG. 3 shown above. For the parts common to the first embodiment, reference numerals are used and detailed description thereof will be omitted.

The bottom portion 55Db has a curved line in a cross section along the direction from the first end 51 to the second end 52. For example, the bottom 55Bb has a hemispherical shape. The curvature of the bottom 55Bb is arbitrary. The bottom 55Db includes a portion located farther from the substrate 40 than the second surface 54b.

[Sixth Embodiment]
See FIG. 7 (a). FIG. 7A is a diagram showing a sixth embodiment in the present disclosure. Similarly to the above, the wafer mounting structure 20E in the sixth embodiment corresponds to FIG. 3 shown above. For the parts common to the first embodiment, reference numerals are used and detailed description thereof will be omitted.

The entire inner wall 55Ea is located in the substrate 40. A part of the bottom portion 55Eb is located inside the substrate 40, and the rest is located outside the substrate 40. In one embodiment, the portion of the bottom 55Eb on the second end 52 side is located between the first surface 54a and the second surface 54b. In one embodiment, the portion of the bottom 55Eb on the second end 52 side is located between the B surface 40b and the first surface 54a. In one embodiment, the portion of the bottom 55Eb on the second end 52 side is located below the second surface 54b.

[7th Embodiment]
See FIG. 7 (b). FIG. 7B is a diagram showing a seventh embodiment in the present disclosure. Similarly to the above, the wafer mounting structure 20F in the seventh embodiment corresponds to FIG. 3 shown above. For the parts common to the first embodiment, reference numerals are used and detailed description thereof will be omitted.

The inner wall 55F is inclined by a predetermined angle with respect to the surfaces along the first outer wall 53a and the second outer wall 53b. From another viewpoint, the inner wall 55F is inclined from the first end 51 toward the bottom 55Fb so that the inner diameter of the recess 55F becomes smaller. That is, it can be said that the thickness of the terminal 50F from the first outer wall 53a to the inner wall 55F gradually increases toward the second end 52 side. The inclination angle of the inner wall 55Fa is arbitrary.

The lower part of the inner wall 55Fa is located between the B surface 40b and the first surface 54a. In another aspect, the lower portion of the inner wall 55Fa is located between the first surface 54a and the second surface 54b. The position of the lower part of the inner wall 55Fa is arbitrary.

In the present embodiment, the inner wall 55Fa and the bottom 55Fb are both inclined, and the respective inclination angles are arbitrary. Therefore, the inclination angles of the inner wall 55Fa and the bottom 55Fb may be the same. When the inclination angles of the inner wall 55Fa and the bottom 55Fb are the same, the boundary between the inner wall 55Fa and the bottom 55Fb becomes unclear. In such a case, it is considered that the recess 55F is composed of only the bottom 55Fb. For example, if the recess 55F has a conical shape, it is considered that the recess 55F is composed of only the bottom 55Fb.

The inner wall 55F of the recess 55F is inclined so that the inner diameter of the recess 55F becomes smaller from the first end 51 of the terminal 50F toward the bottom 55Fb. As a result, the terminal 50F has a structure in which the cross section gradually increases from the first end 51 side toward the bottom 55Fb. As a result, it is suppressed that the cross-sectional area of the terminal 50F changes significantly in the vicinity of the bottom 55Fb. As a result, it is suppressed that a strong force is locally applied to the substrate 40. As a result, the load on the substrate 40 can be further reduced.

Wafer mounting structures 20 to 20F are heaters in which

conductors

The wafer mounting devices 10 to 10F include the wafer mounting structures 20 to 20F described above, a power supply unit 11 capable of supplying power to the

conductors

21 and 21A, and a control unit 13 for controlling the power supply of the power supply unit 11. ,have. This makes it possible to provide wafer mounting devices 10 to 10F in which the load on the substrate 40 is reduced.

Next, an example of modification of the terminal according to the present disclosure will be described.

Refer to FIG. FIG. 8 is a diagram showing a modified example of the terminal 50 according to the first embodiment in the present disclosure. The terminal 50G in the modified example is different in that it has a terminal hole portion 56G on the second end 52 side in relation to the first embodiment. Other basic configurations are the same as those in the first embodiment. Reference numerals are used for the parts common to the first embodiment, and detailed description thereof will be omitted.

The terminal 50G has a terminal hole portion 56G from the second end 52 toward the first end 51 side. A conductive member Co is screwed into the terminal hole portion 56G. For example, a connecting portion 22 (see FIG. 2) can be connected to the conductive member Co. Alternatively, the conductive member Co can be a part of the connecting portion 22. This facilitates the connection of the connecting portion 22 to the terminal 50G.

The depth of the terminal hole portion 56G may be the same as that of the recess 55, may be larger than that of the recess 55, or may be smaller than that of the recess 55. The inner diameter of the terminal hole portion 55G may be the same as that of the recess 55, may be larger than the recess 55, or may be smaller than the recess 55.

In the first embodiment, the embodiment in which the substrate is fixed to the shaft member by a fixing member or the like has been described. However, when the substrate and the shaft member are both made of ceramic, the substrate and the shaft member may be integrated by firing.

Further, in the first embodiment, the case where the conductor is a resistance heating element has been described. However, the conductor may be an electrostatic chuck in which the wafer is adsorbed on the A surface. The electrostatic chuck generates a Coulomb force with the wafer by the electric power from the power supply unit, and attracts the wafer to the A surface. Further, the conductor may be a high frequency electrode used when generating plasma or the like. That is, the conductor is arbitrary.

As a method of locating the terminals in the substrate, the terminals are inserted into the substrate before firing (base before sintering), and the substrate before firing is fired to be inside the substrate (base after sintering). There is a way to position some of the terminals. As another method, there is also a method of inserting the terminal into the substrate (insertion portion) after sintering. The method of locating a part of the terminal in the substrate is arbitrary.

Further, in the first embodiment, the terminal is described with an example in which the terminal is arranged on the lower surface of the substrate. However, the terminals may be arranged on the upper surface of the substrate or on the side surface of the substrate. That is, the position where the terminal is arranged is arbitrary.

Furthermore, the collar in this disclosure is not an essential component. Therefore, the collar part can be eliminated. Further, all of the terminals may be located in the substrate.

Further, in the first embodiment, the example in which the B plane is parallel to the A plane has been described. However, the B plane does not necessarily have to be parallel to the A plane. Further, the B surface may have dents (unevenness) in some places. In some cases, it may have dents in some places, and the dents can surround a portion of the terminal located outside the substrate. In this case, the portion of the terminal located outside the substrate is a portion where a predetermined space is provided between the terminal and the surface constituting the substrate.

Further, in the fifth embodiment, the inner wall and / or the bottom portion has been described with an example in which the inner wall and / or the bottom portion is inclined so that the inner diameter of the recess becomes smaller from the first end to the second end. However, the inner wall or the bottom may be inclined so that the inner diameter of the recess increases from the first end to the second end. Further, the inner wall and / or the bottom portion may be inclined by a predetermined angle with respect to the first direction from the first end to the second end.

Also, again, the most second end side portion of the bottom may be located between the B plane and the first plane, or between the first plane and the second plane. It may be located away from the substrate from the second surface. The peripheral edge (the portion on the first end side) at the bottom may be located at any portion from the first end to the bottom.

Further, the wafer mounting structure (base structure) in the present disclosure can also mount an object other than the wafer. Further, the wafer mounted on the wafer mounting structure according to the present disclosure is not limited to a semiconductor, and may be a crystal wafer.

10 to 10G ... Wafer mounting device 11 ... Power supply unit 13 ... Control unit 20 to 20G ...

Wafer mounting structure

21, 21A ... Conductor 40 ... Base 50 to 50G ... Terminal 51 ... First end 52 ... Second end 53 ... Outer wall 54 ... Brim portion 55 to 55F ... Recessed portion 55a to 55Fa ... Inner wall 55b to 55Fb ... Bottom Li ... First direction

Claims

Insulating substrate and
The conductor located in the substrate and
It has a first end and a second end, has a length extending from the first end to the second end, and has a terminal electrically connected to the conductor.
The first end is located inside the substrate and the second end is located outside the substrate.
The terminal has a recess from the first end toward the second end.
The bottom portion of the recess is a wafer mounting structure having a shape inclined from the peripheral edge of the bottom portion toward the center of the bottom portion toward the second end side.
The wafer mounting structure according to claim 1, wherein the bottom of the recess includes a portion located outside the substrate.
The terminal has a collar portion that projects outside the substrate in a direction that intersects the first direction from the first end to the second end.
The collar portion has a first surface facing the substrate and has a first surface.
The wafer mounting structure according to claim 1 or 2, wherein the bottom portion includes a portion located farther from the substrate than the first surface.
The collar further has a second surface located on the opposite side of the first surface.
The wafer mounting structure according to claim 3, wherein the bottom portion includes a portion located farther from the substrate than the second surface.
The wafer mounting structure according to any one of claims 1 to 4, wherein the bottom of the recess includes a portion located in the substrate.
The wafer mounting structure according to any one of claims 1 to 5, wherein the bottom portion has a conical shape in which the inner diameter increases toward the first end.
The wafer mounting structure according to any one of claims 1 to 5, wherein the bottom portion has a curved line in a cross section along the direction from the first end to the second end.
The wafer mounting structure according to any one of claims 1 to 7, wherein the inner wall of the recess is inclined so that the diameter of the recess becomes smaller from the first end of the terminal toward the bottom. body.
The wafer mounting structure according to any one of claims 1 to 8, wherein the wafer mounting structure is a heater in which the conductor contains a resistance heating element.
The wafer mounting structure according to any one of claims 1 to 9,
A power supply unit capable of supplying power to the conductor and
A control unit that controls the power supply of the power supply unit and
Wafer mounting device that has.
Insulating substrate and
The conductor located in the substrate and
A terminal having a first end and a second end, having a length extending from the first end to the second end, and electrically connected to the conductor.
The first end is located inside the substrate and the second end is located outside the substrate.
The terminal has a recess from the first end toward the second end.
The bottom portion of the recess is a substrate structure having a shape inclined from the peripheral edge of the bottom portion toward the center of the bottom portion toward the second end side.