WO2020186428A1 - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

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Publication number
WO2020186428A1
WO2020186428A1 PCT/CN2019/078556 CN2019078556W WO2020186428A1 WO 2020186428 A1 WO2020186428 A1 WO 2020186428A1 CN 2019078556 W CN2019078556 W CN 2019078556W WO 2020186428 A1 WO2020186428 A1 WO 2020186428A1
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WIPO (PCT)
Prior art keywords
light
layer
emitting element
display panel
emitting
Prior art date
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PCT/CN2019/078556
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English (en)
French (fr)
Inventor
唐国强
张晓晋
马国强
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2019/078556 priority Critical patent/WO2020186428A1/zh
Priority to US16/642,580 priority patent/US11342392B2/en
Priority to EP19856410.6A priority patent/EP3944329A4/en
Priority to CN201980000328.4A priority patent/CN112055893B/zh
Publication of WO2020186428A1 publication Critical patent/WO2020186428A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G06F3/0421—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means by interrupting or reflecting a light beam, e.g. optical touch-screen
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Definitions

  • the embodiment of the present disclosure relates to a display panel and a manufacturing method thereof.
  • OLED display panels have the characteristics of self-luminescence, high contrast, low energy consumption, wide viewing angle, fast response speed, can be used for flexible panels, wide operating temperature range, and simple manufacturing. Prospects. With the development of fingerprint recognition technology, how to apply fingerprint recognition technology to OLED display panels is a problem of concern in the industry.
  • At least some embodiments of the present disclosure provide a display panel, including: a base substrate; a first sub-pixel disposed on the base substrate and including a first light-emitting element configured to emit visible light to perform Display operation; a second light-emitting element, and the first light-emitting element stacked in a direction perpendicular to the base substrate, and configured to emit infrared light; the first photosensitive element is provided on the base substrate, It is configured to sense the reflected light of the infrared light.
  • the first light-emitting element includes a first light-emitting layer, a first electrode, and a second electrode
  • the second light-emitting element includes a second light-emitting layer; in a direction perpendicular to the base substrate, the The first electrode, the first light-emitting layer, the second light-emitting layer, and the second electrode are sequentially stacked.
  • the first light emitting element emits red light.
  • the first sub-pixel further includes a first transistor electrically connected to the first light-emitting element
  • the display panel further includes a first light-absorbing layer disposed on the The first transistor is away from the side of the base substrate, and is configured to absorb the infrared light to reduce the radiation of the infrared light to the first transistor.
  • the first light absorbing layer is disposed between the first transistor and the first light-emitting element, the first light absorbing layer includes a first via hole, and the first transistor passes through the The first via hole is electrically connected to the first light-emitting element.
  • the display panel further includes: a first insulating layer disposed between the first transistor and the first light absorbing layer, the first insulating layer includes a second via, and the first insulating layer The two via holes communicate with the first via hole to allow the first transistor to be electrically connected to the first light-emitting element.
  • the display panel further includes a second transistor connected to the first photosensitive element, the first insulating layer further includes a third via hole, and the second transistor passes through the third via hole. It is electrically connected to the first photosensitive element.
  • the first photosensitive element in a direction perpendicular to the base substrate, is disposed on a side of the first light-emitting element close to the base substrate.
  • a first opening is provided in the first light absorbing layer, and the first photosensitive element and the first opening at least partially overlap in a direction perpendicular to the base substrate to pass through the The opening receives the reflected light of the infrared light.
  • the display panel further includes a light shielding layer located on a side of the first photosensitive element away from the base substrate, and the light shielding layer is provided with a second opening at a position corresponding to the first photosensitive element, This allows the first photosensitive element to receive the reflected infrared light through the second opening.
  • the display panel further includes a second transistor connected to the first photosensitive element and a second light absorbing layer, and the second light absorbing layer is disposed on the second light emitting element and the first light absorbing layer. Between the photosensitive elements, and is configured to absorb the infrared light to reduce the irradiation of the infrared light to the first photosensitive element.
  • the display panel further includes a second sub-pixel adjacent to the first sub-pixel, and the first photosensitive element is disposed between the first sub-pixel and the second sub-pixel.
  • the display panel further includes a second photosensitive element and a third sub-pixel adjacent to the first sub-pixel, and the second photosensitive element is disposed between the first sub-pixel and the third sub-pixel. Between the sub-pixels and configured to sense the reflected light of the infrared light.
  • the wavelength range of the infrared light is 760 nm-9 ⁇ m.
  • At least some embodiments of the present disclosure further provide a method for manufacturing a display panel, including: providing a base substrate, forming a first sub-pixel on the base substrate, the first sub-pixel including a first light-emitting element, and The first light-emitting element is configured to emit visible light for display operation; a second light-emitting element is formed, and the second light-emitting element and the first light-emitting element are stacked in a direction perpendicular to the base substrate and configured to emit Infrared light; a first photosensitive element is formed on the base substrate, and the first photosensitive element is configured to sense the reflected light of the infrared light.
  • forming the first light-emitting element and the second light-emitting element includes: sequentially stacking and forming a first electrode, the first light-emitting layer, a charge generation layer, and the second light-emitting element on the base substrate.
  • a light emitting layer and a second electrode, the first light emitting layer and the second light emitting layer correspond to the first light emitting element and the second light emitting element, respectively.
  • forming the first light-emitting element and the second light-emitting element includes sequentially stacking and forming a first electrode, a first hole transport layer, the first light-emitting layer, and a second light-emitting layer on the base substrate.
  • An electron transport layer, a charge generation layer, a second hole transport layer, the second light-emitting layer, a second electron transport layer and a second electrode, the first light-emitting layer and the second light-emitting layer respectively correspond to the The first light-emitting element and the second light-emitting element.
  • the manufacturing method further includes: forming an electron blocking layer between the first light emitting layer and the first electron transport layer, and forming an electron blocking layer between the second hole transport layer and the second light emitting layer.
  • a hole blocking layer is formed between the layers.
  • the first light-emitting layer, the charge generation layer, and the second light-emitting layer are formed by an evaporation process.
  • FIG. 1A is a schematic diagram of a circuit for display operation of a display panel provided by some embodiments of the present disclosure
  • FIG. 1B is a schematic plan view of a display panel provided by some embodiments of the present disclosure.
  • FIG. 2 is a schematic diagram of pixel arrangement provided by some embodiments of the present disclosure.
  • FIG. 3 is a schematic partial cross-sectional view of a fingerprint recognition area of a display panel provided by some embodiments of the disclosure.
  • FIG. 4 is a schematic diagram of a series structure of a first light-emitting element and a second light-emitting element provided by some embodiments of the disclosure;
  • FIG. 5 shows a schematic cross-sectional view of a first photosensitive element and a second transistor provided by some embodiments of the present disclosure
  • FIG. 6 is a schematic diagram of a photosensitive circuit provided by some embodiments of the present disclosure.
  • FIG. 7 is a schematic partial cross-sectional view of a fingerprint recognition area of a display panel provided by other embodiments of the disclosure.
  • the display panel with fingerprint recognition function can have an external structure and a built-in structure.
  • the plug-in structure refers to attaching the fingerprint identification module to the outside of the display panel, such as on the back side of the display panel. This structure requires additional preparation of the fingerprint identification module and results in a larger volume of the final product.
  • the built-in structure refers to the integration of the fingerprint recognition module into the laminated structure of the display panel. This structure can realize full-screen fingerprint recognition. Since this structure involves compatibility with the manufacturing process of the display panel, how to make a high-profile A fingerprint recognition module with a noise ratio and optimization of the production process are issues that need to be considered.
  • the original light-emitting elements in the display panel are usually used as the light source of the optical fingerprint recognition module. This not only interferes with the display effect of the display panel, but also reduces the life.
  • At least some embodiments of the present disclosure provide a display panel and a manufacturing method thereof.
  • the display panel integrates a photosensitive element in a display screen, uses infrared light as the light source of the photosensitive element, and the infrared light emitting element and the display panel emit visible light to perform
  • the light-emitting elements for display operation are stacked in a direction perpendicular to the substrate.
  • the display panel has at least the following advantages: full-screen fingerprint recognition can be realized; because infrared light is invisible light, it will not interfere with the display effect; it does not need to use the original light-emitting element in the display panel as a light source, which is beneficial to extend the use of the light-emitting element Life:
  • the infrared light emitting element and the light emitting element in the display panel are stacked and arranged without occupying additional area of the display panel, which helps to increase the distribution area and distribution density of pixels, thereby increasing the opening area (aperture ratio) and Resolution.
  • FIG. 1A is a schematic diagram of a circuit for display operation of a display panel 10 provided by an embodiment of the disclosure
  • FIG. 1B is a schematic plan view of the display panel.
  • the display panel 10 includes a plurality of gate lines 11, a plurality of data lines 12, and a plurality of pixel units 100 arranged in an array.
  • the plurality of gate lines 11 and the plurality of data lines 12 cross each other to define a plurality of pixels. Area.
  • Each pixel unit 100 includes a plurality of sub-pixels for emitting visible light of different colors, such as red light, green light, and blue light.
  • Each sub-pixel includes a first light-emitting element and a pixel circuit that drives the first light-emitting element to emit light, and the first light-emitting element is configured to emit visible light for display operation.
  • the plurality of pixel units 100 are arranged in the display area 20 of the display panel 10.
  • the display area 20 includes a fingerprint recognition area 30, and the fingerprint recognition area may be part or all of the display area 20.
  • the display panel 10 is an organic light-emitting diode (OLED) display panel, and the first light-emitting element is an organic light-emitting diode; or, the display panel 10 is a polymer light-emitting diode (PLED) display panel, and the first light-emitting element It is a polymer light-emitting diode; or the display panel is a quantum dot light-emitting diode (QLED) display panel, and the first light-emitting element is a quantum dot light-emitting diode.
  • OLED organic light-emitting diode
  • QLED quantum dot light-emitting diode
  • the pixel circuit includes a conventional 2T1C (that is, two transistors and one capacitor) pixel circuit, and in different embodiments, the pixel circuit may further include a compensation circuit including an internal compensation circuit or an external compensation circuit.
  • the circuit may include transistors, capacitors, etc.
  • the pixel circuit may also include a reset circuit, a light emission control circuit, a detection circuit, etc., as required.
  • the embodiment of the present disclosure does not limit the type of the first light-emitting element and the specific structure of the pixel circuit.
  • the display panel may further include a data driving circuit 6 and a gate driving circuit 7.
  • the data driving circuit 6 and the gate driving circuit 7 are connected to the pixel unit 100 through the data line 12 and the gate line 11, respectively.
  • the data driving circuit 6 is used to provide the sub-pixels in the pixel unit 100 with data signals used for display operation
  • the gate driving circuit 7 is used to provide the sub-pixels in the pixel unit 100 with scanning signals used in the display operation. Used to provide various control signals, power signals, etc.
  • each pixel unit 100 the arrangement of sub-pixels includes, for example, ⁇ arrangement, Real RGB arrangement, and Pentile arrangement.
  • each pixel unit 100 includes three sub-pixels, and the three sub-pixels respectively emit red light, green light and blue light, and the three sub-pixels are arranged in a triangle.
  • the three sub-pixels respectively include first light-emitting elements that emit red light, green light, and blue light.
  • the three sub-pixels are located in the same row or column of sub-pixels. in.
  • each pixel unit 100 only includes sub-pixels that emit light of two colors; since three primary colors (red, green, and blue) are required to form all colors, each pixel is The unit can borrow a sub-pixel emitting another color of light in an adjacent pixel unit to realize full-color display.
  • the embodiment of the present disclosure does not limit the arrangement of the sub-pixels.
  • the display panel 10 also includes a second light-emitting element that emits infrared light (with a wavelength range of 760 nm-1 mm) and is configured to be used as a light source for fingerprint recognition. Since the infrared light is invisible light, it will not interfere with the display effect; and, since the original first light-emitting element in the display panel does not need to be used as a light source for fingerprint recognition, it is beneficial to extend the life of the light-emitting element.
  • a second light-emitting element that emits infrared light (with a wavelength range of 760 nm-1 mm) and is configured to be used as a light source for fingerprint recognition. Since the infrared light is invisible light, it will not interfere with the display effect; and, since the original first light-emitting element in the display panel does not need to be used as a light source for fingerprint recognition, it is beneficial to extend the life of the light-emitting element.
  • the infrared light is located in the near infrared region, for example, the wavelength range is 760 nm-9 ⁇ m, for example, the wavelength is about 940 nm. Since the human body infrared is in the wavelength range of 9-14 ⁇ m, the human body infrared will not cause false signals of the photosensitive element and interfere with fingerprint recognition. Since infrared light with a wavelength of about 940 nm is the weakest in the solar emission spectrum, setting the wavelength of the infrared light emitted by the second light-emitting element to about 940 nm can better avoid the interference of sunlight on the photosensitive element. In addition, since the energy level gap of the infrared light emitting material is smaller, the near-infrared light can also avoid false signals caused by heat drying compared to infrared light in other wavelength ranges.
  • the second light-emitting element and the first light-emitting element are stacked in a direction perpendicular to the display surface, so the second light-emitting element is located in the sub-pixel area where the first light-emitting element is located.
  • This arrangement helps to increase the distribution area and distribution density of the sub-pixels, thereby increasing the aperture area (aperture ratio) and resolution of the display panel.
  • the second light-emitting element can also share a driving circuit with the first light-emitting element, that is, the production of a driving circuit for the second light-emitting element is omitted. Since human eyes are not sensitive to infrared light, the second light-emitting element can emit light together with the first light-emitting element in the pixel unit.
  • FIG. 2 shows a schematic diagram of a pixel arrangement provided by some embodiments of the present disclosure.
  • the multiple sub-pixels 300 are arranged in a Pentile manner, and are respectively arranged in the multiple sub-pixel regions 310.
  • Each pixel unit 100 only includes two sub-pixels 300.
  • each pixel unit borrows a sub-pixel that emits light of another color in an adjacent pixel unit.
  • the Pentile arrangement can reduce the total number of sub-pixels and increase the area of each sub-pixel area, which helps to reduce the process difficulty; and under the same number of sub-pixels, it can have higher pixels Resolution (PPI).
  • PPI pixels Resolution
  • each pixel unit 100 includes two sub-pixels 300, which respectively emit red light (R) and green light (G); or the two sub-pixels respectively emit blue light (B) and green light (G). ).
  • the second light-emitting element is disposed in the red-emitting sub-pixel area 310, and forms a laminated structure (R+IR) with the first light-emitting element that emits red light, that is, the red-emitting sub-pixel is the first sub-pixel .
  • the display panel 10 further includes a first photosensitive element configured to sense the infrared light emitted by the second light-emitting element reflected by the user's finger or palm touching the display side surface of the display panel 10, which will correspond to The light signal of the reflected light carrying fingerprint or palmprint information is converted into an electrical signal, which is used to realize fingerprint or palmprint image collection.
  • a gap area (that is, PDL Gap below) is formed between adjacent sub-pixel areas.
  • Four spaced areas ABCD are formed between the red-emitting sub-pixel area 310 and the adjacent sub-pixel areas.
  • the first light-emitting element can be arranged in any spaced area, such as area A, that is, the first light-sensitive element. It is arranged between the first sub-pixel (R+IR) and the adjacent second sub-pixel (for example, the blue-emitting sub-pixel in FIG. 2).
  • the display panel 10 further includes a storage capacitor configured to store the electrical signal generated by the first photosensitive element.
  • the storage capacitor can be arranged in any of the three spaced areas of the BCD.
  • each second light-emitting element may be provided with a plurality of photosensitive elements correspondingly to improve the sensitivity of light.
  • the plurality of photosensitive elements are arranged in a plurality of spaced regions, such as A region, B region, or A region, B region, and C region. Wait.
  • the display panel may further include a second photosensitive element, and the second photosensitive element may be disposed in any interval area other than the interval area occupied by the first photosensitive element and the storage capacitor.
  • the second photosensitive element is disposed between the first sub-pixel and the adjacent third sub-pixel (for example, the sub-pixel emitting green light in FIG. 2), and is configured to be connected to the first photosensitive element.
  • the elements collectively sense the reflected light of the infrared light emitted by the second light-emitting element.
  • the display panel 10 may further include a third photosensitive element.
  • the first photosensitive element, the second photosensitive element, and the third photosensitive element are respectively arranged in three spaced regions.
  • the storage capacitor is arranged in the remaining interval area.
  • the size d of the interval area depends on the distribution density of the sub-pixels, for example, depends on the interval between the pixel opening areas in the pixel defining layer below.
  • the value range of the size d of the interval area is 5 ⁇ m-25 ⁇ m.
  • FIG. 3 is a partial cross-sectional view of a fingerprint recognition area of a display panel provided by some embodiments of the disclosure.
  • the display panel 10 includes a base substrate 101 and sub-pixels 300 (first sub-pixels) arranged on the base substrate 101.
  • the first transistor 120 may be a driving transistor configured to work in a saturated state and control the magnitude of the current that drives the first light-emitting element 110 to emit light.
  • the first transistor 120 may also be a light-emitting control transistor, which is used to control whether a current for driving the first light-emitting element 110 to emit light flows.
  • the embodiment of the present disclosure does not limit the specific type of the first transistor.
  • the display panel 10 may further include a first light absorption layer 160.
  • the first light absorption layer 160 is disposed on the side of the first transistor 120 away from the base substrate 101 and is configured to absorb the second light emission.
  • the infrared light emitted by the element 130 irradiates the first transistor 120.
  • the first light absorbing layer 160 can protect the transistors in the pixel unit, and prevent the infrared light from deteriorating the performance of the device.
  • the first light absorbing layer 160 is disposed between the first transistor 120 and the first light-emitting element 110, thereby regardless of the infrared light emitted downward by the first light-emitting element 110 or the infrared light reflected by, for example, fingerprints. All light is blocked by the first light absorbing layer 160 and will not be irradiated on (the active layer of) the first transistor 120, so the first transistor 120 will not be affected by the light reflected by the first light-emitting element 110.
  • the second light-emitting element 130 and the first light-emitting element 110 are stacked in a direction perpendicular to the base substrate 101. This arrangement can save the occupied area of the second light emitting element 130, thereby improving the resolution of the display panel 10.
  • the first light-emitting element 110 includes a first electrode 111, a first light-emitting layer 112, and a second electrode 113 stacked in this order.
  • the first electrode 111 is electrically connected to the first transistor 120.
  • the first light absorbing layer 160 includes a first via hole 161, and the first transistor 120 is electrically connected to the first electrode 111 of the first light emitting element 110 through the first via hole 161.
  • the second light emitting element 130 includes a second light emitting layer 114, and the first electrode 111, the first light emitting layer 112, the second light emitting layer 114, and the second electrode 113 are stacked in a direction perpendicular to the base substrate 101.
  • the second light-emitting layer 114 is an infrared light-emitting material, such as phosphorescent complex system materials, or rare earth erbium complexes with different organic ligands, such as ternary complex Er(TTA)2PhenMA, binary complex Er(DBM ) 3MA and so on.
  • At least one electrode of the first light-emitting element 110 and at least one electrode of the second light-emitting element 130 are electrically connected or shared.
  • the first light-emitting element 110 and the second light-emitting element 130 form a tandem structure.
  • Fig. 4 shows a schematic structural diagram of an example of the series structure.
  • the series structure includes a first stack 241 and a second stack 242 stacked between the first electrode 111 and the second electrode 113.
  • Each stacked body may include at least a hole transport layer, a light emitting layer, and an electron transport layer.
  • FIG. 4 shows a schematic structural diagram of an example of the series structure.
  • the series structure includes a first stack 241 and a second stack 242 stacked between the first electrode 111 and the second electrode 113.
  • Each stacked body may include at least a hole transport layer, a light emitting layer, and an electron transport layer.
  • the first stack 241 includes a first hole transport layer 116, a first light emitting layer 112, and a first electron transport layer 115 of the first light emitting element 110 laminated on the first electrode 111;
  • the second stack 242 includes the second hole transport layer 118, the second light emitting layer 114, and the second electron transport layer 117 of the second light emitting element 130 stacked in this order.
  • the series structure further includes a charge generation layer 119 located between the first stack 241 and the second stack 242.
  • the charge generation layer 119 includes an N-type charge generation layer that can be disposed adjacent to the first stack 241 and A P-type charge generation layer is disposed on the N-type charge generation layer and adjacent to the second stacked body 242.
  • the N-type charge generation layer may be doped with alkali metals such as lithium (Li), sodium (Na), potassium (K) or cesium (Cs) or such as magnesium (Mg), strontium (Sr), barium (Ba) Or radium (Ra) alkaline earth metal (but not limited to any one of them) organic layer; the P-type charge generation layer can be formed by doping an organic matrix material with hole transport ability with a dopant. The obtained organic layer is formed.
  • alkali metals such as lithium (Li), sodium (Na), potassium (K) or cesium (Cs) or such as magnesium (Mg), strontium (Sr), barium (Ba) Or radium (Ra) alkaline earth metal (but not limited to any one of them) organic layer
  • the P-type charge generation layer can be formed by doping an organic matrix material with hole transport ability with a dopant. The obtained organic layer is formed.
  • the first electrode 111 and the second electrode 113 are respectively an anode and a cathode.
  • the first electrode 111 and the second electrode 113 can also be a cathode and an anode, respectively.
  • the positions of the electron transport layer and the hole transport layer in each stacked body require Exchange, not repeat them here.
  • the second stack 242 including the second light-emitting layer 114 in FIG. 4 is closer to the second electrode 113 than the first stack 241 including the first light-emitting layer 115.
  • the stacking order of the second stack 242 and the first stack 241 can also be exchanged.
  • the first stack 241 and the second stack 242 may further include an electron blocking layer 131 and a hole blocking layer 132, respectively.
  • the electron blocking layer and the hole blocking layer are configured to prevent the movement of the hole and electron recombination area in each stack, thereby improving the stability of the device's light emission.
  • the electron blocking layer 131 is disposed between the first light emitting layer 112 and the first electron transport layer 115
  • the hole blocking layer 132 is disposed between the second light emitting layer 114 and the second hole transport layer 118.
  • the second light-emitting element 130 and the first light-emitting element 110 emitting red light in the pixel unit 100 form a tandem series structure. Since the energy levels of red light and infrared light are close, the selection range of materials such as light-emitting layer materials, electron transport materials, hole transport materials, and electrode materials of the light-emitting element is relatively large, and the realization difficulty is relatively low.
  • each red light-emitting element is provided with a second light-emitting element 130 and a first light-sensitive element corresponding to the second light-emitting element 130, so that the display panel 10 can have pixel-level high resolution. Rate fingerprint recognition function.
  • the display panel 10 further includes a first photosensitive element 140 disposed on the first base substrate 101, and the first photosensitive element 140 is configured to sense the light emitted by the second light-emitting element 130 and appear on the display panel.
  • the infrared light reflected by the finger or palm is detected on the surface, and the light signal corresponding to the reflected light is converted into an electrical signal, so that fingerprint images or palmprint images can be collected for fingerprint recognition or palmprint recognition functions.
  • the exemplary first photosensitive element 140 includes a first electrode 141, a second electrode 143, and a photodetecting layer 142 disposed between the first electrode 141 and the second electrode 143.
  • the light detection layer 142 generates photo-generated carriers under the irradiation of infrared light, and the photo-generated carriers are collected by the photosensitive circuit and converted into electrical signals, and then output to an external processing circuit for analysis to obtain a fingerprint image.
  • each pixel unit 100 includes at least one first photosensitive element 140, and the second electrodes 143 of the plurality of first photosensitive elements 140 are spaced apart from each other in the display panel 10 and arranged in an array.
  • the plurality of second electrodes 143 are arranged in the same layer and formed by a patterning process. That is, the display panel 10 includes a conductive layer including a plurality of electrode patterns, and the plurality of electrode patterns are the second electrodes 143 of the plurality of first photosensitive elements 140 respectively.
  • the display panel 10 further includes a second transistor (switching transistor) 150 electrically connected to the first photosensitive element 140.
  • a second transistor switching transistor
  • the second transistor 150 is disposed on the side of the first light absorbing layer 160 away from the first light emitting element 110 and the second light emitting element 130, so that the first light absorbing layer 160 also protects the second transistor 150 Not affected by light.
  • FIG. 5 shows an enlarged cross-sectional schematic diagram of the first photosensitive element 140 and the second transistor 150 provided by some embodiments of the present disclosure.
  • the display panel 10 further includes a first lead 144 arranged in the same layer as the first electrode 141 and insulated from it.
  • the first lead 144 is used to electrically connect the second electrode 143 to lead the second electrode 143 to other electrodes.
  • Conductive layer to facilitate wiring For example, as shown in FIG. 5, the second electrode 143 directly overlaps the first lead 144 to form an electrical connection. Since the first photosensitive element 140 is arranged in the space between the sub-pixels, the space occupied by the second electrode 143 is limited.
  • the second electrode 143 can be drawn out by setting the first lead to save the second electrode 143 on the layer where it is located. Takes up space.
  • the second electrodes 143 of the plurality of first photosensitive elements 140 in the display panel 10 can be formed by forming an entire conductive layer on the base substrate 101 and then performing a patterning process on the conductive layer.
  • the first light absorbing layer 160 is omitted in FIG. 5, please refer to FIG. 3, in the case that the first light absorbing layer 160 is formed after the first electrode 141, the first light absorbing layer 160 is provided at the position corresponding to the first lead 144. The hole exposes the first lead 144 so as to allow the second electrode 413 to be electrically connected to the first electrode 141.
  • the first photosensitive element 140 may be implemented as a photodiode.
  • the light detection layer 142 is implemented as a PN junction or a PIN junction, for example, to form a PN-type photodiode or a PIN-type photodiode.
  • the light detection layer 142 may be an inorganic material, such as germanium-based or silicon-based material; the light detection layer 142 may also be an organic material, such as a polymer with infrared sensitivity, a mixture of polymers, a small molecule material or a mixture of small molecules Materials, for example, include poly[9-(1-octylnonyl)-9H-carbazole-2,7-diyl]-2,5-thiophenediyl-2,1,3-benzothiadiazole-4, 7-diyl-2,5-thiophenediyl] (PCDTBT) and [6,6]-phenyl-carbon 71-butyric acid methyl ester (PC71BM) in a certain proportion of mixed materials, or include zinc A mixed material of metalized porphyrin, PC61BM and nitrobenzene (Zn-metallated porphyrin: PC61BM: pyridine).
  • PCDTBT poly[9-(1-octylnon
  • the first photosensitive element 140 may also be implemented as a metal-semiconductor-metal photosensitive element, and the light detection layer 142 forms Schottky contacts with the first electrode 141 and the second electrode 143, respectively; for example, the light detection layer 142 includes arsenic.
  • Indium gallium (InGaAs) amorphous silicon, molybdenum sulfide, indium gallium zinc oxide, polysilicon, amorphous selenium, mercury iodide, lead oxide, microcrystalline silicon, nanocrystalline silicon, monocrystalline silicon, perylene tetracarboxylic acid dibenzo At least one of imidazole, silicon nanowire, and copper phthalocyanine (CuPc).
  • the first photosensitive element 140 may also be implemented as a photosensitive thin film transistor or other types of photosensitive elements.
  • the embodiment of the present disclosure does not limit the type of the first photosensitive element 140.
  • the infrared light emitted by the second light-emitting element 130 is reflected by the surface of the finger 103, and then is received by the first photosensitive element 140 and converted into an electrical signal. Since the fingerprint valley (concave surface) of the finger 103 and the fingerprint ridge (convex surface) have different reflectivity to light, they reflect light of different intensities, thereby generating electrical signals of different sizes.
  • the electrical signal is sent to an external processing circuit (for example, a fingerprint processing chip, not shown) for analysis to obtain a fingerprint image on the surface of the finger, and the fingerprint image is further used for fingerprint identification.
  • the plurality of first photosensitive elements 140 respectively receive the light reflected by the corresponding area of the corresponding finger 103 to collect fingerprint images of the corresponding area, and then stitch them into a complete fingerprint image.
  • each pixel unit 100 is configured with at least one first photosensitive element 140, that is, the display panel 10 includes a plurality of first photosensitive elements 140 corresponding to the plurality of pixel units 100 respectively.
  • the first photosensitive element 140 itself is also arranged in an array to form an image sensor to collect fingerprint images.
  • the display panel 10 further includes a first insulating layer 170 disposed between the first transistor 120 and the first light absorbing layer 160.
  • the first insulating layer 170 includes a second via hole 171, and the second via hole 171 is in communication with the first via hole 161 to allow the first transistor 120 to be electrically connected to the first light emitting element 110.
  • the first photosensitive element 140 is disposed on the side of the first light-emitting element 110 close to the base substrate 101.
  • the orthographic projection of the first photosensitive element 140 on the base substrate 101 is outside the orthographic projection of the first light-emitting element 110 on the base substrate 101.
  • the first insulating layer 170 further includes a third via 172, and the second transistor 150 is electrically connected to the first photosensitive element 140 through the third via 172.
  • the display panel 10 further includes a second insulating layer 180 disposed between the first light absorbing layer 160 and the first light emitting element 110.
  • the first photosensitive element 140 is disposed under the second insulating layer 180, and the first light-emitting element 110 is disposed on the second insulating layer 180.
  • This structure enables the first photosensitive element 140 to be formed before the first light-emitting element 110. Since the first light-emitting element 110 usually includes an organic material, its temperature resistance is limited. Compared with the formation of the first light-emitting element after or at the same time.
  • the first photosensitive element 140 is formed before the first light-emitting element is formed, so that the manufacturing process of the first photosensitive element 140 is not limited to the temperature resistance of the first light-emitting element 110, and has higher process flexibility Sex.
  • the second insulating layer 180 is configured as a planarization layer, so that the first light-emitting element 110 is formed on a flat surface.
  • the first photosensitive element 140 since the first photosensitive element 140 is disposed under the first light-emitting element 110, it does not occupy a light-emitting area, which is beneficial to increase the aperture ratio of the display panel.
  • the first light absorbing layer 160 is further provided with a first opening 162, and the first photosensitive element 140 and the first opening 162 at least partially overlap in a direction perpendicular to the base substrate 101 to pass through The first opening 162 receives the infrared light.
  • the first opening 162 exposes the first electrode 141 of the first photosensitive element 140, and the light detecting layer 142 and the second electrode 143 are sequentially disposed on the first electrode 141.
  • the first photosensitive element 140 is disposed under the first light absorbing layer 160, and the first photosensitive element 140 and the first opening 162 are in a direction perpendicular to the base substrate 101.
  • the upper part overlaps at least partially, so that the first photosensitive element 140 is at least partially exposed through the first opening 162, so that infrared light incident (reflected by, for example, fingerprints) through the first opening 162 can be detected.
  • the display panel 10 further includes a pixel defining layer (PDL) 105, which is disposed on the first electrode 111 of the first light emitting element 110 to separate the light emitting layers of different sub-pixels.
  • PDL pixel defining layer
  • a third opening 164 is provided in the pixel defining layer 105 at a position corresponding to the first electrode 111, and the third opening exposes at least a part of the first electrode 111, the first light emitting layer 112 of the first light emitting element 110 and /Or the second light-emitting layer 114 of the second light-emitting element 130 is formed at least in the third opening and is in contact with the first electrode 111.
  • the size d of the spacing area depends on the distribution density of the sub-pixels, for example, the size range is 5 ⁇ m-25 ⁇ m.
  • the first photosensitive element 140 is arranged corresponding to the gap area (PDL Gap) between adjacent third openings 164, that is, the first opening 162 in the first light absorbing layer 160 is arranged corresponding to the gap area, thereby avoiding the above
  • the light-emitting layer of the light-emitting element blocks infrared light reflected to the first photosensitive element 140.
  • the size (side length or diameter) of the first opening 162 ranges from 5 ⁇ m to 25 ⁇ m.
  • the display surface 10 further includes a light shielding layer 106 located above the first photosensitive element 140.
  • the light shielding layer 106 is provided with a second opening 163 at a position corresponding to the first photosensitive element 140 to allow the first photosensitive element 140 to pass through the second opening 163 to receive the reflected infrared light.
  • the second opening 163 exposes at least part of the first photosensitive element 140.
  • the second opening 163 is configured to block large-angle stray light and improve the sensing accuracy of the first photosensitive element 140.
  • the optical path (including reflection angle, etc.) of the infrared light is determined according to the relative position of the second light-emitting element 130 and the first photosensitive element 140, and the light shielding layer 106 can be used to shield the reflected light with an excessively large angle.
  • the light-shielding layer 106 and the first electrode 111 of the first light-emitting element 110 may be provided in the same layer or integrated structure, for example, the first electrode 111 serves as the light-shielding layer at the same time, and the second opening 163 is provided in the first electrode. 111 in.
  • the size of the second opening 163 should not be too large, otherwise it will not reflect the stray light; it should not be too small, otherwise the first photosensitive element 140 will not be able to obtain sufficient exposure and the sensitivity will be reduced.
  • the size (side length or diameter) of the second opening 163 ranges from 1 micrometer to 15 micrometers, for example about 1.5 micrometers.
  • the first light emitting element 110 has a top emission structure
  • the first electrode 111 has reflectivity
  • the second electrode 113 has transmissive or semi-transmissive properties.
  • the first electrode 111 includes a high work function material to act as an anode, such as an ITO/Ag/ITO laminate structure
  • the second electrode 113 includes a low work function material to act as a cathode, such as a semi-transmissive metal or metal alloy
  • the material is, for example, an Ag/Mg alloy material.
  • the first transistor 120 includes a gate 121, a gate insulating layer 125, an active layer 122, a source 123, and a drain 124.
  • the embodiment of the present disclosure does not limit the type, material, and structure of the first transistor 120.
  • the active layer of the first transistor 120 may be microcrystalline silicon, amorphous silicon, Inorganic semiconductor materials such as polysilicon (low-temperature polysilicon or high-temperature polysilicon), oxide semiconductors (such as IGZO), or organic materials, such as PBTTT (Poly(2,5-bis(3-alkylthiophene-2-yl)thieno[ 3,2-b]thiophene)), PDBT-co-TT, PDQT, PDVT-10, dinaphtho-dithiophene (DNTT) or pentacene and other organic semiconductor materials.
  • the first transistor 120 may be N-type or P-type.
  • the second transistor 150 includes a gate electrode 151, a gate insulating layer 155, an active layer 152, a source electrode 153, and a drain electrode 154.
  • the embodiment of the present disclosure does not limit the type, material, and structure of the second transistor 150.
  • the active layer of the first transistor 120 may be microcrystalline silicon, amorphous silicon, Inorganic semiconductor materials such as polysilicon (low temperature polysilicon or high temperature polysilicon), oxide semiconductors (such as IGZO), or organic materials, such as PBTTT (Poly(2,5-bis(3-alkylthiophene-2-yl)thieno[ 3,2-b]thiophene)), PDBT-co-TT, PDQT, PDVT-10, dinaphtho-dithiophene (DNTT) or pentacene and other organic semiconductor materials.
  • the second transistor 150 may be N-type or P-type.
  • the drain 154 of the second transistor 150 is electrically connected to the first electrode 141 of the first photosensitive element 140.
  • the pixel unit 100 further includes a first conductive layer 126.
  • the first conductive layer 126 and the gate 121 of the first transistor 120 are stacked and arranged at intervals to form a first capacitor, that is, one electrode of the first capacitor and the first transistor
  • the grid 121 is electrically connected and integrally formed.
  • the first capacitor is used as a part of the pixel driving circuit to store or maintain the level of the gate 121.
  • the gate 151 of the second transistor 150 and the first conductive layer 126 are in the same layer and insulated from each other.
  • the "same layer arrangement" in the embodiments of the present disclosure means that two or more structures are formed by the same patterning process through the same material, and does not necessarily mean that they have the same height or are formed on the same surface.
  • the source and drain of the first transistor and the second transistor are symmetrical in physical structure, so the two can be interchanged according to the corresponding circuit connection.
  • the display panel 10 further includes a second capacitor 207, and the second capacitor 207 includes a first electrode 208 and a second electrode 209.
  • the first electrode 208 and the gate 151 of the second transistor 150 are provided in the same layer and insulated, and the second electrode 209 is provided in the same layer and electrically connected to the drain 154 of the second transistor 150.
  • the second electrode 209 of the second capacitor 207 and the drain 154 of the second transistor 150 are integrally formed.
  • the second capacitor 207, the second transistor 150, and the first photosensitive element 140 form the photosensitive circuit 210 as shown in FIG. 6, and the first photosensitive element 140 is a photodiode.
  • the cathode of the first photosensitive element 140 (corresponding to the first electrode 141) is electrically connected to the drain 154 of the second transistor 150, and the cathode of the first photosensitive element 140 (corresponding to the second The electrode 143) is connected to a bias voltage VB, which is at a low level, for example, grounded, so that the first photosensitive element 140 works in a reverse bias state.
  • the second electrode 209 of the second capacitor 207 is electrically connected to the first electrode 141 of the first photosensitive element 140, and the first electrode 208 can be connected to a fixed potential, for example, is electrically connected to the second electrode 143 of the first photosensitive element 140.
  • the source 153 of the second transistor 150 is connected to the external processing circuit 211, and the gate 151 is connected to the control signal VG.
  • a working process of the above-mentioned photosensitive circuit 210 includes: in the reset phase, the control signal VG is an on signal, the second transistor 150 is turned on, and the processing circuit 211 writes a reset signal to the second capacitor 207 via the second transistor 150 to make the second The capacitor 207 is reset; in the light-sensing phase, the control signal VG is the off signal, the second transistor 150 is turned off, and the first light-sensing element 140 generates photo-generated carriers under the irradiation of the reflected light and charges the second capacitor 207, so that the second capacitor 207 generates and stores the data voltage Vdata; in the detection phase, the control signal VG is the turn-on signal, the second transistor 150 is turned on, and the processing circuit 211 reads the data voltage Vdata stored in the second capacitor 207 through the second transistor 150, and then analyzes and forms Fingerprint image.
  • the processing circuit 211 further processes the data voltage to obtain a fingerprint image, and the fingerprint image can be used for corresponding applications, such as system unlocking, mobile payment, and so on.
  • the processing circuit may be a digital signal processor (DSP), a central processing unit, etc., and may also include a storage device as required.
  • DSP digital signal processor
  • the embodiment of the present disclosure does not limit the specific implementation of the photosensitive circuit 210 and the processing circuit 211.
  • the first photosensitive element 140 can also be used to implement touch sensing, that is, to sense a user's touch. For example, when a user’s finger touches the display panel 10, the light emitted by the second light-emitting element 130 is reflected by the surface of the finger and then received by the first photosensitive element 140 and converted into an electrical signal. The external circuit detects the electrical signal to determine that the finger is touching Touch, you can also determine the direction of movement, etc., which will not be repeated here.
  • touch sensing that is, to sense a user's touch. For example, when a user’s finger touches the display panel 10, the light emitted by the second light-emitting element 130 is reflected by the surface of the finger and then received by the first photosensitive element 140 and converted into an electrical signal. The external circuit detects the electrical signal to determine that the finger is touching Touch, you can also determine the direction of movement, etc., which will not be repeated here.
  • the display panel 10 further includes an encapsulation layer 190 and a cover plate 102 disposed on the second electrode 113 of the first light-emitting element 110.
  • the encapsulation layer 190 is configured to seal the light-emitting elements (the first light-emitting element 110 and the second light-emitting element 130) to prevent external moisture and oxygen from penetrating into the light-emitting element and the driving circuit and causing damage to the device.
  • the encapsulation layer 109 includes an organic film or a structure in which an organic film and an inorganic film are alternately stacked.
  • a water absorption layer (not shown) may be further provided between the encapsulation layer 190 and the first light-emitting element 110, configured to absorb residual water vapor or sol in the pre-production process of the light-emitting element.
  • the cover 102 is, for example, a glass cover.
  • the cover plate 102 and the packaging layer 190 may be an integral structure.
  • the display panel 10 may also include an optical film such as a polarizing layer on the display side.
  • the display panel 10 further includes a polarizing layer 181, for example, the polarizing layer 181 is disposed between the cover plate 102 and the encapsulation layer 190.
  • the polarizing layer 181 constitutes a circular polarizer that includes a stacked linear polarizing layer and a quarter-wave plate, and the axis of the quarter-wave plate forms an angle of 45 degrees with the polarization axis of the linear polarizing layer. Therefore, after the external light passes through the circular polarizer, it is converted into circularly polarized light.
  • the polarizing layer 181 can absorb external light directed to the display panel, thereby reducing the interference of external ambient light and improving the contrast of the displayed image of the display panel.
  • the display panel further includes a touch structure 182.
  • the touch structure 182 is located between the polarizing layer 181 and the encapsulation layer 190.
  • the touch structure 182 can detect whether the display panel is touched and the touched position.
  • the type of the touch structure 182 may include resistive, capacitive, infrared, acoustic or other types.
  • the capacitive position touch structure may include a self-capacitance type and a mutual-capacitance type. When an external object (such as a finger) approaches, the capacitance value of the capacitive touch unit will change. In this way, the touched position of the display panel can be detected.
  • the embodiments of the present disclosure do not limit the specific type and structure of the touch structure.
  • the touch structure may cooperate with the first photosensitive element 140.
  • the position touch structure can be used to detect whether the display panel is touched. If there is a touch, the display panel can be switched to the recognition mode, and the fingerprint image is acquired through the first photosensitive element 140 to perform fingerprint recognition.
  • the touch structure 182 may be attached to the display side of the display panel.
  • the positional touch structure can be formed on the display side of the display panel by non-adhesive methods such as deposition and patterning.
  • the touch structure 182 (for example, touch electrodes) is directly formed on the surface of the encapsulation layer 190.
  • the base substrate 101 may be an inorganic substrate (such as glass, quartz, sapphire, silicon wafer, etc.) or an organic flexible substrate (such as polyimide (PI), polyethylene terephthalate (PET) ), polycarbonate, polyethylene, polyacrylate, polyetherimide, polyethersulfone, etc.), embodiments of the present disclosure include but are not limited thereto.
  • an inorganic substrate such as glass, quartz, sapphire, silicon wafer, etc.
  • an organic flexible substrate such as polyimide (PI), polyethylene terephthalate (PET)
  • PET polyethylene terephthalate
  • polycarbonate polyethylene
  • polyacrylate polyetherimide
  • polyethersulfone polyethersulfone
  • FIG. 7 is a schematic cross-sectional view of a display panel provided by other embodiments of the disclosure.
  • the difference between the display panel provided in this embodiment and the display panel shown in FIG. 3 is that in the direction perpendicular to the base substrate 101, the first photosensitive element 140 is located on the side of the first light-emitting element 110 away from the base substrate 101.
  • the first photosensitive element 140 is closer to the cover 102, that is, closer to the finger 103 to be detected, which reduces the shielding of the first photosensitive element 140 by other layer structures, so that the first photosensitive element 140 has more High exposure and sensitivity.
  • the second transistor 150 electrically connected to the first photosensitive element 140 is also located on the side of the first light-emitting element 110 away from the base substrate 101.
  • the display panel 10 further includes a second light absorption layer 165, which is disposed between the second light-emitting element 130 and the first light-sensitive element 140, and is configured to absorb infrared light emitted by the second light-emitting element 130 to reduce the effect of the infrared light on the first light-emitting element.
  • the illumination of the photosensitive element 140 reduces the interference to the fingerprint signal caused by the infrared light emitted by the second light-emitting element 130 directly irradiating the first photosensitive element 140.
  • the second light-absorbing layer 165 and the second light-absorbing layer 165 can reduce the infrared light emitted by the second light-emitting element 130 from irradiating (the active layer) of the second transistor 150, thereby protecting the second transistor and preventing the infrared light from causing the device. Deterioration of performance.
  • the encapsulation layer 190 includes a first encapsulation layer 191, a second encapsulation layer 192, and a third encapsulation layer 193 that are stacked.
  • the first encapsulation layer 191 and the third encapsulation layer 193 are made of inorganic materials; the second encapsulation layer 192 is located between the first encapsulation layer 191 and the third encapsulation layer 193 and is an organic material.
  • the second light absorption layer 165 is set in a specific area to prevent the infrared light emitted by the second light-emitting element 130 from irradiating the second transistor 150 without affecting the infrared light
  • the finger is reflected to the transmission path of the first photosensitive element 140.
  • the second light absorption layer 165 is disposed between the first encapsulation layer 191 and the second encapsulation layer 192.
  • the second light absorbing layer 165 may also be disposed between the second encapsulation layer 192 and the third encapsulation layer 193.
  • the material of the first light absorbing layer 160 and the second light absorbing layer 165 is a black organic material, such as a black matrix material, such as a black resin material, or a dark inorganic oxide material.
  • the material of the first light absorption layer 160 and the second light absorption layer 165 is a polyimide (PI) material doped with carbon black particles.
  • PI polyimide
  • the materials of the first light absorption layer 160 and the second light absorption layer 165 may be the same or different.
  • Some embodiments of the present disclosure further provide a manufacturing method of the above-mentioned display panel 10, the manufacturing method includes: providing a base substrate; forming a first sub-pixel on the base substrate, the first sub-pixel including a first light-emitting element
  • the first light-emitting element is configured to emit visible light for display operation; a second light-emitting element is formed, and the second light-emitting element and the first light-emitting element are stacked in a direction perpendicular to the base substrate, so
  • the second light-emitting element is configured to emit infrared light; a first photosensitive element is formed on the base substrate, and the first photosensitive element is configured to sense the reflected light of the infrared light.
  • the manufacturing method includes the following steps S31-S35.
  • Step S31 forming a pixel driving circuit of the first light-emitting element 110 on the base substrate 101, and the pixel driving circuit is configured to drive the first light-emitting element 110 to emit light.
  • forming the pixel driving circuit includes forming a first transistor 120, for example, including sequentially forming an active layer 122, a gate insulating layer 125, a gate 121, a first interlayer insulating layer, and a first conductive layer on the base substrate 101. 126.
  • the second interlayer insulating layer and the source and drain electrode layers including the source electrode 123 and the drain electrode 124).
  • the gate 151 of the second transistor 150 is formed at the same time when the first conductive layer 126 is formed, that is, the gate 151 of the second transistor 150 and the first conductive layer 126 are formed of the same conductive material through a patterning process.
  • the first electrode 208 of the second capacitor 207 is also formed.
  • the active layer 152 of the second transistor 150 is formed between the formation of the second interlayer insulating layer and the source and drain electrode layers of the first transistor 120.
  • the source and drain electrode layers of the second transistor 150 are formed at the same time when the source and drain electrode layers of the first transistor 120 are formed, that is, the source and drain electrode layers of the second transistor 150 and The source and drain electrode layers of the first transistor 120 are formed of the same conductive material through a patterning process.
  • the second electrode 209 of the second capacitor 207 is also formed.
  • the second electrode 209 is electrically connected to the drain 154 of the second transistor 150 or is an integral structure.
  • Step S32 forming a first insulating layer 170 on the first transistor 150, and forming a third via 172 in the first insulating 170, and the third via 172 exposes at least part of the drain 154 of the second transistor 150;
  • the first electrode 141 of the first photosensitive element 140 is formed on the first insulating layer 170, and the first electrode 141 is electrically connected to the drain 154 of the second transistor 150 through the third via 172.
  • Step S33 forming a first light absorbing layer 160 on the first electrode 141 of the first photosensitive element 140, and forming a first opening 162 in the first light absorbing layer 160, and the first opening 162 exposes the first electrode 141.
  • Step S34 forming a photodetecting layer 142 and a second electrode 143 on the first electrode 141 of the first photosensitive element 140 to form a first photosensitive element 140, and then forming a second insulating layer 180 on the first photosensitive element 140, and A patterning process is performed to form a fourth via hole in the second insulating layer 180, a first via hole 161 in the first light absorbing layer 160, and a second via hole 171 in the first insulating layer 170.
  • Step S35 forming the first electrode 111 of the first light emitting element 110 on the second insulating layer 180, forming a pixel defining layer 105 on the first electrode 111, and forming a second electrode 111 in the pixel defining layer corresponding to the first electrode 111 Three openings 164, and then the first light-emitting layer 112 of the first light-emitting element 110, the second light-emitting layer 114 of the second light-emitting element 130, and the second electrode 113 are sequentially formed on the first electrode 111 to form the first light-emitting element 110 And the second light emitting element 130.
  • the light shielding layer 106 may also be formed at the same time as the first electrode 111 is formed. An electrode material layer is formed and a patterning process is performed on the electrode material layer to form the first electrode 111 of the first light emitting element 110 and the light shielding layer 106.
  • the light shielding layer has a second opening 163 formed at a position corresponding to the first photosensitive element 140.
  • the second opening 163 may have a structure in which the light shielding layer and the first electrode 111 are integrated.
  • a first hole transport layer 116 for example, referring to FIG. 4, on the first electrode 111, a first hole transport layer 116, a first light-emitting layer 112, a first electron transport layer 115, a charge generation layer 119, a second hole transport layer 118, The second light-emitting layer 114, the second electron transport layer 117, and the second electrode 113.
  • the manufacturing method further includes: forming an electron blocking layer 131 between the first light emitting layer 112 and the first electron transport layer 151, and forming a hole blocking layer between the second hole transport layer 118 and the second light emitting layer 114 ⁇ 132.
  • the first electrode 111 can be formed by a physical vapor deposition (such as sputtering) process, and the subsequent first hole transport layer 116, the first light-emitting layer 112, the first electron transport layer 115, and the charge generation process can be formed by an evaporation process.
  • a fine metal mask (FFM) is used to form the first light-emitting layer 112 and the second light-emitting layer 114.
  • the precision metal mask has high precision.
  • the display The panel has a higher yield and resolution.
  • an encapsulation layer 190 may be formed on the panel structure obtained above to seal the light-emitting element, and the cover plate 102 may be attached, which will not be repeated here.
  • the material of the first electrode 111 of the first light-emitting element 110 is reflective and has a high work function to facilitate the injection of holes into the light-emitting layer, such as a laminated structure of ITO/Ag/ITO.
  • the second electrode 113 of the first light-emitting element 110 and the second electrode 143 of the first photosensitive element 140 are transmissive, such as a transparent conductive metal oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), Zinc oxide (ZnO), zinc aluminum oxide (AZO), etc.
  • a transparent conductive metal oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), Zinc oxide (ZnO), zinc aluminum oxide (AZO), etc.
  • the base substrate 101 may be an inorganic substrate (such as glass, quartz, sapphire, silicon wafer, etc.) or an organic flexible substrate (such as polyimide (PI), polyethylene terephthalate (PET) ), polycarbonate, polyethylene, polyacrylate, polyetherimide, polyethersulfone, etc.), embodiments of the present disclosure include but are not limited thereto.
  • an inorganic substrate such as glass, quartz, sapphire, silicon wafer, etc.
  • an organic flexible substrate such as polyimide (PI), polyethylene terephthalate (PET)
  • PET polyethylene terephthalate
  • polycarbonate polyethylene
  • polyacrylate polyetherimide
  • polyethersulfone polyethersulfone
  • the material of the above-mentioned insulating layer may be an inorganic insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, etc., silicon nitride or silicon oxynitride, or aluminum oxide, titanium nitride, etc. Insulating materials of metal elements; it can also be organic insulating materials such as acrylic acid and polymethyl methacrylate (PMMA).
  • inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, etc., silicon nitride or silicon oxynitride, or aluminum oxide, titanium nitride, etc.
  • Insulating materials of metal elements it can also be organic insulating materials such as acrylic acid and polymethyl methacrylate (PMMA).
  • the manufacturing method is different from the manufacturing method provided in the above embodiments in that a similar method is used to form the pixel driving circuit, the first light emitting element, and the second light emitting element on the base substrate 101. After the two light-emitting elements, a second transistor 150 and a first photosensitive element 140 are formed on the light-emitting element.
  • the manufacturing method includes forming the encapsulation layer 190 and the second light absorption layer 165 on the second electrode 113 of the first light emitting element 110.
  • forming the encapsulation layer 190 includes sequentially forming a first encapsulation layer 191, a second encapsulation layer 192, and a third encapsulation layer 193 on the second electrode 113 of the first light emitting element 110.
  • the second light absorbing layer 165 is formed between the first encapsulation layer 191 and the second encapsulation layer 192.
  • the second light absorption layer 165 may also be formed between the second encapsulation layer 192 and the third encapsulation layer 193.
  • the second transistor 150 and the first photosensitive element 140 are formed on the third encapsulation layer 193.
  • the process temperature for forming the second transistor 150 and the first photosensitive element 140 are both lower than 100°C.
  • the active layer 152 of the second transistor 150 is an organic material, such as PBTTT (Poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene)), PDBT- Organic semiconductor materials such as co-TT, PDQT, PDVT-10, dinaphtho-dithiophene (DNTT) or pentacene.
  • PBTTT Poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene)
  • PDBT- Organic semiconductor materials such as co-TT, PDQT, PDVT-10, dinaphtho-dithiophene (DNTT) or pentacene.
  • a solution method is used to form the layer structures of the second transistor 150 and the first photosensitive element 140.
  • the solution method allows the material layer to be formed at a relatively low temperature, so as not to damage the previously formed organic light emitting device.

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Abstract

一种显示面板(10)及其制作方法，显示面板(10)包括：衬底基板(101)；第一子像素(300)，设置于衬底基板(101)上，包括第一发光元件(110)，第一发光元件(110)配置为发出可见光以进行显示操作；第二发光元件(130)，与第一发光元件(110)在垂直于衬底基板(101)的方向上层叠设置，并配置为发出红外光；第一感光元件(140)，设置于衬底基板(101)上，配置为感测红外光被反射后的光线。显示面板(10)可以具有较高的开口率和分辨率。

Description

显示面板及其制作方法 技术领域
本公开实施例涉及一种显示面板及其制作方法。
背景技术
在显示领域，有机发光二极管(OLED)显示面板具有自发光、对比度高、能耗低、视角广、响应速度快、可用于挠曲性面板、使用温度范围广、制造简单等特点，具有广阔的发展前景。随着指纹识别技术的发展，如何将指纹识别技术应用在OLED显示面板中，是业界备受关注的问题。
发明内容
本公开至少一些实施例提供一种显示面板，包括：衬底基板；第一子像素，设置于所述衬底基板上，包括第一发光元件，所述第一发光元件配置为发出可见光以进行显示操作；第二发光元件，与所述第一发光元件在垂直于所述衬底基板的方向上层叠设置，并配置为发出红外光；第一感光元件，设置于所述衬底基板上，配置为感测所述红外光被反射后的光线。
在一些示例中，所述第一发光元件包括第一发光层、第一电极和第二电极，所述第二发光元件包括第二发光层；在垂直于所述衬底基板的方向上，所述第一电极、所述第一发光层、所述第二发光层和所述第二电极依次堆叠。
在一些示例中，所述第一发光元件发红光。
在一些示例中，所述第一子像素还包括与所述第一发光元件电连接的第一晶体管，所述显示面板还包括第一光吸收层，所述第一光吸收层设置于所述第一晶体管远离所述衬底基板的一侧，并配置为吸收所述红外光以减少所述红外光对所述第一晶体管的照射。
在一些示例中，所述第一光吸收层设置于所述第一晶体管与所述第一发光元件之间，所述第一光吸收层包括第一过孔，所述第一晶体管通 过所述第一过孔与所述第一发光元件电连接。
在一些示例中，所述显示面板还包括：第一绝缘层，设置于所述第一晶体管与所述第一光吸收层之间，所述第一绝缘层包括第二过孔，所述第二过孔与所述第一过孔相连通，以允许所述第一晶体管与所述第一发光元件电连接。
在一些示例中，所述显示面板还包括与所述第一感光元件连接的第二晶体管，所述第一绝缘层中还包括第三过孔，所述第二晶体管通过所述第三过孔与所述第一感光元件电连接。
在一些示例中，在垂直于所述衬底基板的方向上，所述第一感光元件设置于所述第一发光元件靠近所述衬底基板的一侧。
在一些示例中，所述第一光吸收层中设置有第一开口，所述第一感光元件与所述第一开口在垂直于所述衬底基板的方向上至少部分重叠，以通过所述开口接收所述红外光被反射后的光线。
在一些示例中，所述显示面板还包括位于所述第一感光元件远离所述衬底基板一侧的遮光层，所述遮光层在对应所述第一感光元件的位置设置有第二开口，以允许所述第一感光元件透过所述第二开口接收所述红外光被反射后的光线。
在一些示例中，在垂直于所述衬底基板的方向上，所述第一感光元件设置于所述第一发光元件远离所述衬底基板的一侧。
在一些示例中，所述显示面板还包括与所述第一感光元件连接的第二晶体管和第二光吸收层，所述第二光吸收层设置于所述第二发光元件与所述第一感光元件之间，并配置为吸收所述红外光以减少所述红外光对所述第一感光元件的照射。
在一些示例中，所述显示面板还包括与所述第一子像素相邻的第二子像素，所述第一感光元件设置于所述第一子像素与所述第二子像素之间。
在一些示例中，所述显示面板还包括第二感光元件以及与所述第一子像素相邻的第三子像素，所述第二感光元件设置于所述第一子像素与所述第三子像素之间，且配置为感测所述红外光被反射后的光线。
在一些示例中，所述红外光的波长范围为760nm-9μm。
本公开至少一些实施例还提供一种显示面板的制作方法，包括：提供衬底基板，在所述衬底基板上形成第一子像素，所述第一子像素包括第一发光元件，所述第一发光元件配置为发出可见光以进行显示操作；形成第二发光元件，所述第二发光元件与所述第一发光元件在垂直于所述衬底基板的方向上层叠设置，并配置为发出红外光；在所述衬底基板上形成第一感光元件，所述第一感光元件配置为感测所述红外光被反射后的光线。
在一些示例中，形成所述第一发光元件和所述第二发光元件包括：在所述衬底基板上依次堆叠形成第一电极、所述第一发光层、电荷生成层、所述第二发光层和第二电极，所述第一发光层和所述第二发光层分别对应所述第一发光元件和所述第二发光元件。
在一些示例中，形成所述第一发光元件和所述第二发光元件包括：在所述衬底基板上依次堆叠形成第一电极、第一空穴传输层、所述第一发光层、第一电子传输层、电荷生成层、第二空穴传输层、所述第二发光层、第二电子传输层和第二电极，所述第一发光层和所述第二发光层分别对应所述第一发光元件和所述第二发光元件。
在一些示例中，所述制作方法还包括：在所述第一发光层和所述第一电子传输层之间形成电子阻挡层，以及在所述第二空穴传输层和所述第二发光层之间形成空穴阻挡层。
在一些示例中，通过蒸镀工艺形成所述第一发光层、所述电荷生成层和所述第二发光层。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例或相关技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，并非对本公开的限制。
图1A为本公开一些实施例提供的显示面板的用于显示操作的电路示意图；
图1B为本公开一些实施例提供的显示面板的平面示意图；
图2为本公开一些实施例提供的像素排布示意图；
图3为本公开一些实施例提供的显示面板的指纹识别区的部分剖面示意图；
图4为本公开一些实施例提供的第一发光元件和第二发光元件串联结构示意图；
图5示出了本公开一些实施例提供的第一感光元件和第二晶体管的剖面示意图；
图6是本公开一些实施例提供的感光电路的示意图；
图7为本公开另一些实施例提供的显示面板的指纹识别区的部分剖面示意图。
具体实施方式
下面将结合附图，对本公开实施例中的技术方案进行清楚、完整地描述参考在附图中示出并在以下描述中详述的非限制性示例实施例，更加全面地说明本公开的示例实施例和它们的多种特征及有利细节。应注意的是，图中示出的特征不是必须按照比例绘制。本公开省略了已知材料、组件和工艺技术的描述，从而不使本公开的示例实施例模糊。所给出的示例仅旨在有利于理解本公开示例实施例的实施，以及进一步使本领域技术人员能够实施示例实施例。因而，这些示例不应被理解为对本公开的实施例的范围的限制。
除非另外特别定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。此外，在本公开各个实施例中，相同或类似的参考标号表示相同或类似的构件。
具有指纹识别功能的显示面板可以具有外挂式结构和内置式结构。外挂式结构是指将指纹识别模组贴合在显示面板外，例如设置在显示面板的背侧，这种结构需要额外制备指纹识别模组，且导致最终产品的体积较大。内置式结构是指将指纹识别模组集成于显示面板的叠层结构内，这种结构可以实现全屏指纹识别，由于这种结构涉及到与显示面板制作工艺的兼容性问题，如何制作出高信噪比的指纹识别模组并且优化 制作工艺，是需要考虑的问题。
目前，在具有内置式指纹识别模组的显示面板中，通常利用显示面板中原有的发光元件作为光学指纹识别模组的光源，这不仅对显示面板的显示效果造成干扰，还会降低发光元件的寿命。
本公开至少一些实施例提供一种显示面板及其制作方法，该显示面板将感光元件集成于显示屏内，采用红外光作为感光元件的光源，且红外光发光元件与显示面板中发出可见光以进行显示操作的发光元件在垂直于基板的方向上层叠设置。该显示面板至少具有以下优点：可以实现全屏指纹识别；由于红外光为非可见光，不会对显示效果造成干扰；不需要利用显示面板中原有的发光元件作为光源，有利于延长该发光元件的使用寿命；该红外光发光元件与显示面板中的发光元件层叠设置，不需要额外占用显示面板的面积，有助于提高像素的分布面积和分布密度，从而提高显示面板的开口面积(开口率)和分辨率。
图1A为本公开实施例提供的显示面板10的用于显示操作的电路示意图，图1B该显示面板的平面示意图。
如图1A所示，显示面板10包括多条栅线11、多条数据线12以及阵列排布的多个像素单元100，多条栅线11和多条数据线12彼此交叉定义出多个像素区。每个像素单元100包括多个用于发出不用颜色的可见光的子像素，例如红光、绿光和蓝光。每个子像素包括第一发光元件以及驱动该第一发光元件发光的像素电路，该第一发光元件配置为发出可见光以进行显示操作。
如图1B所示，该多个像素单元100设置于显示面板10的显示区域20中，显示区域20包括指纹识别区30，该指纹识别区可以为显示区域20的部分或全部。
例如，显示面板10为有机发光二极管(OLED)显示面板，第一发光元件为有机发光二极管；或者，显示面板10为高分子发光二极管(polymer light-emitting diode，PLED)显示面板，第一发光元件为高分子发光二极管；或者显示面板为量子点发光二极管(quantum dot light-emitting diode，QLED)显示面板，第一发光元件为量子点发光二极管。例如，像素电路包括常规的2T1C(即两个晶体管和一个电容) 像素电路，并且不同的实施例中，该像素电路还可以进一步包括补偿电路，该补偿电路包括内部补偿电路或外部补偿电路，补偿电路可以包括晶体管、电容等。例如，根据需要，该像素电路还可以包括复位电路、发光控制电路、检测电路等。本公开的实施例对于第一发光元件的类型、像素电路的具体结构不作限制。
例如，如图1A所示，该显示面板还可以包括数据驱动电路6和栅极驱动电路7，该数据驱动电路6和栅极驱动电路7分别通过数据线12和栅线11与像素单元100连接。该数据驱动电路6用于为像素单元100中的子像素提供显示操作使用的数据信号，该栅极驱动电路7用于为像素单元100中的子像素提供显示操作使用的扫描信号，还可以进一步用于提供各种控制信号、电源信号等。
例如，在每个像素单元100中，子像素的排布方式例如包括Δ排布、Real RGB排布和Pentile排布。在Δ排布方式中，例如，每个像素单元100包括三个子像素，三个子像素分别发出红光、绿光和蓝光，该三个子像素呈三角形排布。在Real RGB排布方式中，例如，每个像素单元100包括三个子像素，三个子像素分别包括发出红光、绿光和蓝光的第一发光元件，该三个子像素位于同一行或同一列子像素中。例如，在Pentile排布方式中，每个像素单元100仅包括发两种颜色光的子像素；由于需要三基色(红、绿、蓝)构成所有的颜色，在进行显示操作时，每个像素单元可借用相邻像素单元中发另一种颜色光的子像素，来实现全彩显示。本公开实施例对于子像素的排布方式不作限制。
显示面板10还包括第二发光元件，该第二发光元件发红外光(波长范围为760nm-1mm)，配置为用作指纹识别的光源。由于红外光为非可见光，不会对显示效果造成干扰；并且，由于不需要利用显示面板中原有的第一发光元件作为指纹识别的光源，有利于延长该发光元件的寿命。
例如，该红外光位于近红外区，例如波长范围为760nm-9μm，例如波长为940nm左右。由于人体红外线处于9-14μm的波长范围内，因而人体红外线不会引起感光元件的假信号而对指纹识别造成干扰。由于在太阳发射光谱中，波长为940nm左右的红外光是最弱的，因此将 该第二发光元件所发出的红外光波长设置为940nm左右，可以较好地避免太阳光对感光元件的干扰。此外，由于红外光发射材料的能级间隙较小，近红外光相较于其它波长范围的红外光还可以避免热燥引起的假信号。
该第二发光元件与第一发光元件在垂直于显示面的方向上层叠设置，因而该第二发光元件位于该第一发光元件所在的子像素区中。这种设置有助于提高子像素的分布面积和分布密度，从而提高显示面板的开口面积(开口率)和分辨率。在这种情形下，该第二发光元件还可以与该第一发光元件共用驱动电路，即省去了单独为第二发光元件的驱动电路的制作。由于人眼对红外光不敏感，该第二发光元件可以与像素单元中的第一发光元件一起发光。
图2示出了本公开一些实施例提供的一种像素排布示意图。如图2所示，多个子像素300按照Pentile方式排布，分别设置于多个子像素区310中。每个像素单元100仅包括两个子像素300，在进行显示操作时，每个像素单元借用相邻像素单元中发另一种颜色光的子像素。在同样的显示分辨率下，Pentile排列方式可以降低子像素的总数目而增加每个子像素区的面积，有助于降低工艺难度；而在相同的子像素的数目下，可以具有更高的像素分辨率(PPI)。
如图所示，每个像素单元100包括两个子像素300，该两个子像素分别发红光(R)和绿光(G)；或者该两个子像素分别发蓝光(B)和绿光(G)。例如，第二发光元件设置于发红光的子像素区310中，与发红光的第一发光元件形成层叠结构(R+IR)，也即该发光红的子像素为该第一子像素。
显示面板10还包括第一感光元件，该第一感光元件配置为感测该第二发光元件发出的红外光被用户触摸该显示面板10的显示侧表面的手指或手掌反射后的光线，将对应于该携带有指纹或掌纹信息的反射光的光信号转换为电信号，用于实现指纹或掌纹图像的采集。
如图2所示，相邻的子像素区之间形成有间隔区域(也就是后文的PDL Gap)。发红光的子像素区310与相邻的子像素区之间分别形成ABCD四个间隔区域，该第一发感光元件可以设置于任一间隔区域，例 如A区域，也即该第一感光元件设置于第一子像素(R+IR)与相邻的第二子像素(例如为图2中发蓝光的子像素)之间。
例如，在一些实施例中，显示面板10还包括存储电容，配置为存储第一感光元件产生的电信号。例如，当第一发感光元件可以设置于A区域中时，该存储电容可以设置于BCD三个间隔区域中的任一个。
例如，每个第二发光元件可以对应设置多个感光元件以提高感光灵敏度，例如该多个感光元件设置在多个间隔区域中，例如A区域、B区域，或者A区域、B区域、C区域等。
例如，在一些示例中，显示面板还可以包括第二感光元件，该第二感光元件可以设置在该第一感光元件与该存储电容所占用的间隔区域以外的任一间隔区域。例如，如图2所示，该第二感光元件设置于第一子像素和相邻的第三子像素(例如图2中发绿光的子像素)之间，且配置为与该第一感光元件共同感测该第二发光元件发出的红外光被反射后的光线。
在另一些示例中，显示面板10还可以包括第三感光元件，在这种情形下，例如，该第一感光元件、第二感光元件和第三感光元件分别设置于三个间隔区域中，该存储电容则设置于剩余的一个间隔区域中。
如图2所示，该间隔区域的尺寸d取决于子像素的分布密度，例如取决于下文中的像素界定层中像素开口区之间的间隔大小。例如，该间隔区域的尺寸d的取值范围为5微米-25微米。
图3为本公开一些实施例提供的显示面板的指纹识别区的部分剖视图。如图3所示，显示面板10包括衬底基板101以及设置于该衬底基板101上的子像素300(第一子像素)。为了清楚起见，图中仅示出了该第一子像素中的第一发光元件110和与该第一发光元件110电连接的第一晶体管120。例如，该第一晶体管120可以是驱动晶体管，配置为工作在饱和状态下并控制驱动第一发光元件110发光的电流的大小。例如，该第一晶体管120也可以为发光控制晶体管，用于控制驱动第一发光元件110发光的电流是否流过。本公开的实施例对第一晶体管的具体类型不作限制。
例如，如图3所示，该显示面板10还可以包括第一光吸收层160， 第一光吸收层160设置于第一晶体管120远离衬底基板101的一侧，并配置为吸收第二发光元件130发出的红外光对第一晶体管120的照射。该第一光吸收层160可以对像素单元中的晶体管形成保护，避免该红外光的照射引发器件性能的劣化。
例如，如图3所示，第一光吸收层160设置于第一晶体管120与第一发光元件110之间，由此无论第一发光元件110向下发射的红外光或者由例如指纹反射的红外光都被第一光吸收层160阻挡，而不会照射到第一晶体管120(的有源层)上，因此第一晶体管120不会被第一发光元件110所反射的光影响。
如图3所示，第二发光元件130与第一发光元件110在垂直于衬底基板101的方向上层叠设置。这种设置可以省去第二发光元件130的占用面积，从而提高显示面板10的分辨率。
例如，第一发光元件110包括依次层叠的第一电极111、第一发光层112和第二电极113。第一电极111与第一晶体管120电连接。如图3所示，第一光吸收层160包括第一过孔161，第一晶体管120通过该第一过孔161与第一发光元件110的第一电极111电连接。
例如，第二发光元件130包括第二发光层114，第一电极111、第一发光层112、第二发光层114和第二电极113在垂直于衬底基板101的方向上层叠设置。第二发光层114为红外光发光材料，例如包括磷光配合物体系材料、或者带有不同有机配体的稀土铒配合物，如三元配合物Er(TTA)2PhenMA、二元配合物Er(DBM)3MA等。
例如，第一发光元件110的至少一个电极与第二发光元件130的至少一个电极电连接或共用。
例如，第一发光元件110与第二发光元件130形成串联结构(tandem structure)。图4示出了该串联结构的一个示例的结构示意图。如图4所示，该串联结构包括层叠设置于第一电极111和第二电极113之间的第一堆叠体241和第二堆叠体242。每个堆叠体可以至少包括空穴传输层、发光层和电子传输层。例如，如图4所示，第一堆叠体241包括层叠设置于第一电极111上的第一发光元件110的第一空穴传输层116、第一发光层112和第一电子传输层115；第二堆叠体242包括依次层叠 设置的第二发光元件130的第二空穴传输层118、第二发光层114和第二电子传输层117。
该串联结构还包括位于第一堆叠体241和第二堆叠体242之间的电荷生成层119，该电荷生成层119包括可以与第一堆叠体241相邻设置的N型电荷产生层以及设置于该N型电荷产生层上且与第二堆叠体242相邻设置的P型电荷产生层。该N型电荷产生层可以由掺杂有诸如锂(Li)、钠(Na)、钾(K)或铯(Cs)的碱金属或诸如镁(Mg)、锶(Sr)、钡(Ba)或镭(Ra)的碱土金属(但不限于它们中的任何一种)的有机层形成；该P型电荷产生层可以由通过将具有空穴传输能力的有机基质材料与掺杂剂掺杂而获得的有机层形成。
这里第一电极111和第二电极113分别为阳极和阴极。在另一些示例中，第一电极111和第二电极113还可以分别为阴极和阳极，在这种情形下，相应地，在每个堆叠体中，电子传输层和空穴传输层的位置需要调换，这里不再赘述。此外，图4中包括第二发光层114的第二堆叠体242相较于包括第一发光层115的第一堆叠体241更靠近第二电极113，然而本公开实施例对此不作限制，该第二堆叠体242与第一堆叠体241的层叠次序也可以调换。
例如，第一堆叠体241和第二堆叠体242还可以分别包括电子阻挡层131和空穴阻挡层132。该电子阻挡层和空穴阻挡层配置为阻止各堆叠体中空穴与电子复合区域的移动，从而提高器件发光的稳定性。例如，电子阻挡层131设置在第一发光层112和第一电子传输层115之间，空穴阻挡层132设置在第二发光层114和第二空穴传输层118之间。
例如，第二发光元件130与像素单元100中发红光的第一发光元件110形成tandem串联结构。由于红光和红外光的能级接近，因此对于发光元件的发光层材料、电子传输材料、空穴传输材料及电极材料等材料的选择范围较大，实现难度较低。在这种情形下，例如，每个红光发光元件对应设置一个第二发光元件130及与该第二发光元件130相对应的第一感光元件，从而可以使显示面板10具有像素级的高分辨率的指纹识别功能。
例如，如图3所示，显示面板10还包括设置于第一衬底基板101 上的第一感光元件140，该第一感光元件140配置为感测由第二发光元件130发出且在显示面板表面被检测手指或手掌反射的红外光，并将该反射光对应的光信号转化为电信号，从而可以实现指纹图像或掌纹图像的采集，用于指纹识别或者掌纹识别等功能。
例如，如图3所示，该示例性的第一感光元件140包括第一电极141、第二电极143以及设置于第一电极141和第二电极143之间的光探测层142。该光探测层142在红外光的照射下产生光生载流子，该光生载流子被感光电路收集并转化为电信号然后输出到外部处理电路进行分析从而得到指纹图像。
例如，每个像素单元100包括至少一个第一感光元件140，多个第一感光元件140的第二电极143在显示面板10中彼此间隔并成阵列分布。例如，该多个第二电极143同层设置并由一道构图工艺形成。也就是说，显示面板10包括一个导电层，该导电层包括多个电极图案，该多个电极图案分别为该多个第一感光元件140的第二电极143。
例如，显示面板10还包括与该第一感光元件140电连接的第二晶体管(开关晶体管)150。
例如，如图3所示，该第二晶体管150设置于第一光吸收层160远离第一发光元件110和第二发光元件130的一侧，从而第一光吸收层160还保护第二晶体管150不受光照影响。
图5示出了本公开一些实施例提供的第一感光元件140和第二晶体管150的放大剖面示意图。如图5所示，显示面板10还包括与第一电极141同层且绝缘设置的第一引线144，该第一引线144用于与第二电极143电连接，将第二电极143引到其它导电层以方便走线。例如，如图5所示，第二电极143直接搭接在第一引线144上形成电连接。由于第一感光元件140设置在子像素之间的间隔区域，其第二电极143所占用的空间受到限制，通过设置第一引线将第二电极143引出，可以节约第二电极143在其所在层的占用空间。
例如，在这种情形下，显示面板10中的多个第一感光元件140的第二电极143可以通过在衬底基板101上形成一整面导电层然后对该导电层进行构图工艺一道形成。
图5中省略了第一光吸收层160，请对照图3，在第一光吸收层160形成在第一电极141之后的情形下，第一光吸收层160对应第一引线144处设置有过孔以暴露该第一引线144，从而允许该第二电极413与该第一电极141电连接。
例如，该第一感光元件140可以实现为光电二极管，此时光探测层142例如实现为PN结或者PIN结，以形成PN型光电二极管或PIN型光电二极管。例如，光探测层142可以为无机材料，如锗基或硅基材料；光探测层142也可以为有机材料，如具有红外感光性能的聚合物、聚合物的混合物、小分子材料或小分子混合物材料，例如包括聚[9-(1-辛基壬基)-9H-咔唑-2,7-二基]-2,5-噻吩二基-2,1,3-苯并噻二唑-4,7-二基-2,5-噻吩二基](PCDTBT)与[6,6]-苯基-碳71-丁酸甲酯(PC71BM)按一定比例混合而成的混合材料、或者为包括锌金属化卟啉、PC61BM及氮苯的混合材料(Zn-metallated porphyrin:PC61BM:pyridine)。
例如，该第一感光元件140还可以实现为金属-半导体-金属型感光元件，光探测层142分别与第一电极141和第二电极143形成肖特基接触；例如，光探测层142包括砷化铟镓(InGaAs)、非晶硅、硫化钼、氧化铟镓锌、多晶硅、非晶硒、碘化汞、氧化铅、微晶硅、纳米晶硅、单晶硅、苝四甲酸双苯并咪唑、硅纳米线和酞菁铜(CuPc)中的至少一种。
例如，第一感光元件140还可以实现为感光薄膜晶体管等其它类型的感光元件。本公开实施例对于第一感光元件140的类型不作限制。
以该第一感光元件140实现指纹识别为例，在工作工程中，第二发光元件130发出的红外光经由手指103的表面反射，然后再被第一感光元件140接收并转换为电信号。由于手指103的指纹谷(凹陷表面)与指纹脊(凸出表面)对光的反射率不相同而反射不同强度的光，从而产生不同大小的电信号。该电信号发送到外部处理电路(例如指纹处理芯片，未示出)进行分析从而得到手指表面的指纹图像，该指纹图像进一步被用于指纹识别。
例如，多个第一感光元件140分别接受对应手指103对应区域反射的光而采集相应区域的指纹图像，进而拼接成完整的指纹图像。
例如，在显示区域的指纹识别区中，每个像素单元100配置有至少一个第一感光元件140，也即显示面板10包括与多个像素单元100分别对应的多个第一感光元件140，这些第一感光元件140本身也排列为阵列，形成图像传感器以采集指纹图像。
例如，如图3所示，显示面板10还包括第一绝缘层170，设置于第一晶体管120与第一光吸收层160之间。
例如，第一绝缘层170包括第二过孔171，第二过孔171与第一过孔161相连通，以允许第一晶体管120与第一发光元件110电连接。
例如，在垂直于衬底基板101的方向上，第一感光元件140设置于第一发光元件110靠近衬底基板101的一侧。例如，第一感光元件140在衬底基板101上的正投影位于第一发光元件110在衬底基板101上的正投影之外。
例如，第一绝缘层170中还包括第三过孔172，第二晶体管150通过第三过孔172与第一感光元件140电连接。
例如，如图3所示，显示面板10还包括第二绝缘层180，设置于第一光吸收层160以第一发光元件110之间。
相对于衬底基板101，第一感光元件140设置在第二绝缘层180之下，第一发光元件110设置在第二绝缘层180之上。这种结构使得第一感光元件140形成于第一发光元件110之前，由于第一发光元件110通常包括有机材料，其耐受温度有限，相比于在该第一发光元件形成之后或者同时形成该第一感光元件140，在该第一发光元件形成之前形成该第一感光元件140可以使得第一感光元件140的制作工艺不限制于第一发光元件110的耐受温度，具有更高的工艺灵活性。例如，第二绝缘层180配置为平坦化层，从而使得第一发光元件110形成于一个平整的表面。同时，由于第一感光元件140设置于第一发光元件110的下方，并不占用发光面积，有利于提高显示面板的开口率。
例如，如图3所示，第一光吸收层160中还设置有第一开口162，第一感光元件140与该第一开口162在垂直于101衬底基板的方向上至少部分重叠，以通过该第一开口162接收该红外光。
例如，该第一开口162暴露出第一感光元件140的第一电极141， 光探测层142和第二电极143依次设置于该第一电极141上。在另一些实施例中，相对于衬底基板101，第一感光元件140设置在第一光吸收层160之下，第一感光元件140与该第一开口162在垂直于101衬底基板的方向上至少部分重叠，由此第一感光元件140通过第一开口162至少部分暴露，因此可以检测透过该第一开口162入射(由例如指纹反射的)的红外光。
例如，如图3所示，显示面板10还包括像素界定层(PDL)105，该像素界定层105设置于第一发光元件110的第一电极111上，用于分隔不同子像素的发光层，以防止相邻子像素的发光层在发光过程中发生串色。如图3所示，像素界定层105中对应第一电极111的位置设置有第三开口164，该第三开口至少暴露出部分第一电极111，第一发光元件110的第一发光层112和/或第二发光元件130的第二发光层114至少形成在该第三开口中，并与第一电极111接触。
例如，参照图2，该间隔区域的尺寸d取决于子像素的分布密度，例如大小范围为5微米-25微米。
例如，第一感光元件140对应于相邻第三开口164之间的间隔区域(PDL Gap)设置，也即第一光吸收层160中的第一开口162对应于该间隔区域设置，从而避免上述发光元件的发光层遮挡反射到第一感光元件140的红外光。
例如，该第一开口162的尺寸(边长或直径)范围为5微米-25微米。
例如，显示面10还包括位于该第一感光元件140的上方的遮光层106。该遮光层106在对应该第一感光元件140的位置设置有第二开口163以允许该第一感光元件140透过该第二开口163接收红外光被反射后的光线。例如，该第二开口163暴露出该第一感光元件140的至少部分。该第二开口163配置为遮挡大角度的杂散光，提高第一感光元件140的感应准确性。例如，根据第二发光元件130与第一感光元件140的相对位置确定好红外光的光学路径(包括反射角度等)，可以利用该遮光层106遮挡角度过大的反射光。例如，该遮光层106可以与第一发光元件110的第一电极111同层设置或为一体的结构，例如该第一电极 111同时充当该遮光层，该第二开口163设置于该第一电极111中。
例如，该第二开口163的尺寸不宜过大，否则不能起到反射杂散光的下过；也不宜过小，否则会使得第一感光元件140不能得到足够的曝光量从而降低感光灵敏度。例如，该第二开口163的尺寸(边长或者直径)的范围为1微米～15微米，例如为1.5微米左右。
例如，第一发光元件110为顶发射结构，第一电极111具有反射性而第二电极113具有透射性或半透射性。例如，第一电极111包括高功函数的材料以充当阳极，例如为ITO/Ag/ITO叠层结构；第二电极113为低功函数的材料以充当阴极，例如为半透射的金属或金属合金材料，例如为Ag/Mg合金材料。
例如，第一晶体管120包括栅极121、栅极绝缘层125、有源层122、源极123和漏极124。本公开的实施例对于第一晶体管120的类型、材料、结构不作限制，例如其可以为顶栅型、底栅型等，第一晶体管120的有源层可以为微晶硅、非晶硅、多晶硅(低温多晶硅或高温多晶硅)、氧化物半导体(例如IGZO)等无机半导体材料，或者还可以为有机材料，例如为PBTTT(Poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene))、PDBT-co-TT、PDQT、PDVT-10、二萘并-并二噻吩(DNTT)或并五苯等有机半导体材料。例如，第一晶体管120可以为N型或P型。
例如，第二晶体管150包括栅极151、栅极绝缘层155、有源层152、源极153和漏极154。本公开的实施例对于第二晶体管150的类型、材料、结构不作限制，例如其可以为顶栅型、底栅型等，第一晶体管120的有源层可以为微晶硅、非晶硅、多晶硅(低温多晶硅或高温多晶硅)、氧化物半导体(例如IGZO)等无机半导体材料，或者还可以为有机材料，例如为PBTTT(Poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene))、PDBT-co-TT、PDQT、PDVT-10、二萘并-并二噻吩(DNTT)或并五苯等有机半导体材料。例如，第二晶体管150可以为N型或P型。例如，第二晶体管150的漏极154与第一感光元件140的第一电极141电连接。
例如，像素单元100还包括第一导电层126，第一导电层126与第 一晶体管120的栅极121层叠并间隔设置以构成第一电容，也即该第一电容的一个电极与第一晶体管的栅极121电连接且一体成型。例如，该第一电容作为像素驱动电路的一部分，用于存储或保持栅极121的电平。
例如，第二晶体管150的栅极151与该第一导电层126同层且绝缘设置。
需要说明的是，本公开实施例中的“同层设置”是指两种或多种结构通过同一材料由同一构图工艺形成，而不一定是指具有相同的高度或形成于同一表面。
还需要说明的是，第一晶体管和第二晶体管的源极和漏极在物理结构上是对称的，因此二者根据相应的电路连接是可以互换的。
例如，显示面板10还包括第二电容207，第二电容207包括第一电极208和第二电极209。例如，如图3所示，第一电极208与第二晶体管150的栅极151同层且绝缘设置，第二电极209与第二晶体管150的漏极154同层设置且电连接。例如，第二电容207的第二电极209与第二晶体管150的漏极154一体成型。
在一个示例中，第二电容207与第二晶体管150以及第一感光元件140形成如图6所示的感光电路210，该第一感光元件140为光电二极管。
如图6所示，在该感光电路210中，第一感光元件140的阴极(对应第一电极141)与第二晶体管150的漏极154电连接，第一感光元件140的阴极(对应第二电极143)连接一个偏置电压VB，该偏置电压为低电平，例如接地，以使得第一感光元件140工作在反偏状态。第二电容207的第二电极209与第一感光元件140的第一电极141电连接，第一电极208可以连接固定电位，例如与第一感光元件140的第二电极143电连接。第二晶体管150的源极153连接外部处理电路211，栅极151连接控制信号VG。
上述感光电路210的一种工作过程包括：在复位阶段，控制信号VG为开启信号，第二晶体管150导通，处理电路211经由第二晶体管150向第二电容207写入复位信号以使第二电容207复位；在感光阶段， 控制信号VG为关闭信号，第二晶体管150关断，第一感光元件140在反射光线的照射下产生光生载流子并对第二电容207充电，使得第二电容207产生并存储数据电压Vdata；在检测阶段，控制信号VG为开启信号，第二晶体管150导通，处理电路211通过第二晶体管150读取第二电容207存储的数据电压Vdata，之后进行分析形成指纹图像。
例如，该处理电路211对该数据电压进行进一步处理以得到指纹图像，该指纹图像则可以用于相应的应用，例如系统解锁、移动支付等。该处理电路可以为数字信号处理器(DSP)、中央处理器等，根据需要还可以包括存储装置。本公开的实施例对于感光电路210与处理电路211的具体实现方式不作限制。
例如，第一感光元件140还可以用于实现触控感测，也即用于感测用户的触摸。例如，当用户的手指触摸到显示面板10上，第二发光元件130发出的光经由手指的表面反射再被第一感光元件140接收并转换为电信号，外部电路通过检测该电信号判断触手指的触摸，还可以判断移动方向等，这里不再赘述。
例如，显示面板10还包括设置于第一发光元件110的第二电极113之上的封装层190以及盖板102。该封装层190配置为对发光元件(第一发光元件110和第二发光元件130)进行密封以防止外界的湿气和氧向该发光元件及驱动电路的渗透而造成对器件的损坏。例如，封装层109包括有机薄膜或者包括有机薄膜及无机薄膜交替层叠的结构。例如，该封装层190与第一发光元件110之间还可以设置吸水层(未示出)，配置为吸收发光元件在前期制作工艺中残余的水汽或者溶胶。盖板102例如为玻璃盖板。例如，盖板102和封装层190可以为一体的结构。
例如，显示面板10还可以包括位于显示侧的偏光层等光学膜片。如图3所示，显示面板10还包括偏光层181，例如该偏光层181设置于盖板102与封装层190之间。例如，该偏光层181构成圆偏光片，该圆偏光片包括层叠的线性偏光层以及四分之一波片，该四分之一波片的轴与线性偏光层的偏光轴成45度角，因此当外部光穿过该圆偏光片之后，被转换为圆偏光，该圆偏光被显示面板中的电极反射回之后，第二次穿过四分之一波片时又被转换为线偏光，但是该线偏光的偏振方向与 线性偏光层的偏光轴相差90度，而不能穿过该线性偏光层。因此，该偏光层181可以吸收射向显示面板的外部光，从而降低外界环境光的干扰，提高显示面板的显示图像的对比度。
例如，显示面板还包括触控结构182。例如，该触控结构182位于该偏光层181与该封装层190之间。例如，该触控结构182可以检测显示面板是否被触摸以及触摸的位置。例如，该触控结构182的类型可以包括电阻式、电容式、红外线式、声波式或者其它类型。例如，电容式位置触控结构可以包括自电容型、互电容型。在外界物体(例如手指)靠近的情况下，电容式触控单元的电容值会发生变化，如此，可以对显示面板的被触摸位置进行检测。本公开的实施例对于该触控结构的具体类型以及结构不作限制。在本公开的至少一个实施例中，例如，该触控结构可以与该第一感光元件140配合工作。例如，位置触控结构可以用于检测显示面板是否被触摸，如果存在触摸，则可以将显示面板切换为识别模式，通过该第一感光元件140获取指纹图像，以进行指纹识别。
本公开实施例中对该触控结构182在显示面板10中的设置方式不做限制。例如，在本公开一些实施例中，该触控结构可182以贴合在显示面板的显示侧。例如，在本公开另一些实施例中，在显示面板的制造过程中，位置触控结构可以利用沉积、构图等非贴合的方式形成在显示面板的显示侧，例如，如图3所示，触控结构182(例如触控电极)直接形成在该封装层190的表面上。
例如，衬底基板101可以是无机衬底(如玻璃、石英、蓝宝石、硅片等)或者有机柔性衬底(如聚酰亚胺(PI)、聚乙烯对苯二甲酸乙二醇酯(PET)、聚碳酸酯、聚乙烯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜等)，本公开的实施例包括但不限于此。
图7为本公开另一些实施例提供的显示面板的剖面示意图。该实施例提供的显示面板与图3所示的显示面板的区别在于，在垂直于衬底基板101的方向上，第一感光元件140位于第一发光元件110远离衬底基板101的一侧。在这种设置方式中，第一感光元件140更靠近盖板102，也即更靠近待检测的手指103，降低了其它层结构对第一感光元件140的遮挡，使得第一感光元件140具有更高的曝光量和感光灵敏度。
例如，如图7所示，与第一感光元件140电连接的第二晶体管150也位于第一发光元件110远离衬底基板101的一侧。
例如，显示面板10还包括第二光吸收层165，设置于第二发光元件130与第一感光元件140之间，配置为吸收第二发光元件130发出的红外光以减少该红外光对第一感光元件140的照射，从而降低了第二发光元件130发出的红外光直接照射到第一感光元件140造成的对指纹信号的干扰。此外，该第二光吸收层165和可以减少第二发光元件130发出的红外光对第二晶体管150(的有源层)的照射从而对第二晶体管形成保护，避免该红外光的照射引发器件性能的劣化。
例如，封装层190包括层叠设置的第一封装层191、第二封装层192与第三封装层193。例如，第一封装层191与第三封装层193为无机材料；第二封装层192位于第一封装层191与第三封装层193之间，为有机材料。由于无机材料的致密性相较于有机材料更高，因此将封装层190靠外层的材料设置为无机材料可以更有效防止水汽的入侵和渗透；而将中间的第二封装层192设置为有机材料有利于形成平坦的界面。
例如，如图7所示，第二光吸收层165设定在特定的区域面积内，以防止第二发光元件130发出的红外光对第二晶体管150的照射，同时又不影响该红外光经手指反射到第一感光元件140的传输路径。
例如，如图7所示，第二光吸收层165设置于第一封装层191与第二封装层192之间。例如，第二光吸收层165也可以设置于第二封装层192与第三封装层193之间。
例如，第一光吸收层160和第二光吸收层165的材料为黑色的有机材料，例如为黑矩阵材料，例如黑色树脂材料，也可以为深色的无机氧化物材料。在一些示例中，第一光吸收层160和第二光吸收层165的材料为掺杂有炭黑颗粒的聚酰亚胺(PI)材料。第一光吸收层160和第二光吸收层165的材料可以相同或不同。
本公开的一些实施例还提供上述显示面板10的制作方法，该制作方法包括：提供衬底基板；在所述衬底基板上形成第一子像素，所述第一子像素包括第一发光元件，所述第一发光元件配置为发出可见光以进行显示操作；形成第二发光元件，所述第二发光元件与所述第一发光元 件在垂直于所述衬底基板的方向上层叠设置，所述第二发光元件配置为发出红外光；在该衬底基板上形成第一感光元件，该第一感光元件配置为感测所述红外光被反射后的光线。
以下分别对照图3和图7对本公开实施例提供的显示面板的制作方法进行示例性说明。在本公开各实施例中，为了便于说明，相同的元件采用相同的标号，这里不再赘述。
在一些实施例中，请参照图3，该制作方法包括以下步骤S31-S35。
步骤S31：在衬底基板101上形成第一发光元件110的像素驱动电路，该像素驱动电路配置为驱动第一发光元件110发光。例如，形成该像素驱动电路包括形成第一晶体管120，例如包括在衬底基板101上依次形成有源层122、栅极绝缘层125、栅极121、第一层间绝缘层、第一导电层126、第二层间绝缘层及源漏电极层(包括源极123和漏极124)。
例如，在形成第一导电层126的同时一并形成第二晶体管150的栅极151，也即第二晶体管150的栅极151与第一导电层126由同一导电材料经一道构图工艺形成。
例如，在形成第一导电层126的同时还形成第二电容207的第一电极208。
例如，在形成第二层间绝缘层与形成第一晶体管120的源漏电极层之间形成第二晶体管150的有源层152。
例如，在形成第一晶体管120的源漏电极层的同时一并形成第二晶体管150的源漏电极层(包括源极153和漏极154)，也即第二晶体管150的源漏电极层与第一晶体管120的源漏电极层由同一导电材料经一道构图工艺形成。
例如，在形成第一晶体管120的源漏电极层的同时还形成第二电容207的第二电极209。例如，该第二电极209与第二晶体管150的漏极154电连接或为一体的结构。
步骤S32：在第一晶体管150上形成第一绝缘层170，并在第一绝缘170中形成第三过孔172，第三过孔172暴露出第二晶体管150的漏极154的至少部分；在第一绝缘层层170上形成第一感光元件140的第 一电极141，该第一电极141经第三过孔172与第二晶体管150的漏极154电连接。
步骤S33：在第一感光元件140的第一电极141上形成第一光吸收层160，并在第一光吸收层160中形成第一开口162，第一开口162暴露出第一电极141。
步骤S34：在第一感光元件140的第一电极141上依次形成光探测层142和第二电极143以形成第一感光元件140，再在第一感光元件140上形成第二绝缘层180，并进行构图工艺在第二绝缘层180中形成第四过孔、在第一光吸收层160中形成第一过孔161以及在第一绝缘层170中形成第二过孔171。
步骤S35：在第二绝缘层180上形成第一发光元件110的第一电极111，在该第一电极111上形成像素界定层105，并在该像素界定层中对应该第一电极111形成第三开口164，然后在该第一电极111上依次形成第一发光元件110的第一发光层112和第二发光元件130的第二发光层114、以及第二电极113以形成第一发光元件110和第二发光元件130。
例如，在形成该第一电极111的同时还可以形成遮光层106。形成电极材料层并对该电极材料层进行构图工艺形成第一发光元件110的第一电极111和遮光层106，该遮光层在对应该第一感光元件140的位置形成有第二开口163。例如，该第二开口163可以由遮光层与第一电极111为一体的结构。
例如，请参照图4，在该第一电极111上依次形成第一空穴传输层116、第一发光层112、第一电子传输层115、电荷生成层119、第二空穴传输层118、第二发光层114、第二电子传输层117和第二电极113。
例如，该制作方法还包括：在第一发光层112和第一电子传输层151之间形成电子阻挡层131，以及在第二空穴传输层118和第二发光层114之间形成空穴阻挡层132。
例如，可以通过物理气相淀积(例如溅射)工艺形成第一电极111，通过蒸镀工艺形成后续的第一空穴传输层116、第一发光层112、第一电子传输层115、电荷生成层119、第二空穴传输层118、第二发光层 114、第二电子传输层117和第二电极113、以及电子阻挡层131和空穴阻挡层132等。
例如，采用精密金属掩膜(Fine Metal Mask,FFM)形成第一发光层112和第二发光层114，精密金属掩膜具有较高的精度，通过使用精密金属掩膜形成发光层，可以使显示面板具有较高的良率和分辨率。
例如，在上述所得到的面板结构之上还可以形成封装层190将发光元件进行密封，并贴上盖板102，这里不再赘述。
例如，第一发光元件110的第一电极111的材料具有反射性同时具有较高的功函数以利于空穴向发光层的注入，例如为ITO/Ag/ITO的层叠结构。
例如，第一发光元件110的第二电极113和第一感光元件140的第二电极143具有透射性，例如为透明导电金属氧化物，如氧化铟锡(ITO)、氧化铟锌(IZO)、氧化锌(ZnO)、氧化锌铝(AZO)等。
例如，衬底基板101可以是无机衬底(如玻璃、石英、蓝宝石、硅片等)或者有机柔性衬底(如聚酰亚胺(PI)、聚乙烯对苯二甲酸乙二醇酯(PET)、聚碳酸酯、聚乙烯、聚丙烯酸酯、聚醚酰亚胺、聚醚砜等)，本公开的实施例包括但不限于此。
例如，上述绝缘层的材料可以为无机绝缘材料，例如氧化硅、氮化硅、氮氧化硅等硅的氧化物、硅的氮化物或硅的氮氧化物，或者氧化铝、氮化钛等包括金属元素的绝缘材料；也可以为丙烯酸、聚甲基丙烯酸甲酯(PMMA)等有机绝缘材料。
在另一些实施例中，请参照图7，该制作方法与以上实施例所提供的制作方法所不同的是，利用类似的方法在衬底基板101上形成像素驱动电路和第一发光元件及第二发光元件之后，在该发光元件之上形成第二晶体管150以及第一感光元件140。
例如，该制作方法包括在第一发光元件110的第二电极113上形成封装层190和第二光吸收层165。
例如，形成封装层190包括在第一发光元件110的第二电极113上依次形成第一封装层191、第二封装层192和第三封装层193。
例如，第二光吸收层165形成于第一封装层191与第二封装层192 之间。例如，第二光吸收层165也可以形成于第二封装层192与第三封装层193之间。
例如，在第三封装层193上形成第二晶体管150以及第一感光元件140。例如，形成第二晶体管150以及第一感光元件140的工艺温度均低于100℃。
例如，该第二晶体管150的有源层152为有机材料，例如为PBTTT(Poly(2,5-bis(3-alkylthiophene-2-yl)thieno[3,2-b]thiophene))、PDBT-co-TT、PDQT、PDVT-10、二萘并-并二噻吩(DNTT)或并五苯等有机半导体材料。
例如，采用溶液法形成第二晶体管150以及第一感光元件140的各层结构，溶液法允许在相对较低的温度下形成材料层，从而不会对在先形成的有机发光元件造成损伤。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。

Claims (20)

  1. 一种显示面板，包括：
    衬底基板；
    第一子像素，设置于所述衬底基板上，包括第一发光元件，所述第一发光元件配置为发出可见光以进行显示操作；
    第二发光元件，与所述第一发光元件在垂直于所述衬底基板的方向上层叠设置，并配置为发出红外光；
    第一感光元件，设置于所述衬底基板上，配置为感测所述红外光被反射后的光线。
  2. 如权利要求1所述的显示面板，其中，所述第一发光元件包括第一发光层、第一电极和第二电极，所述第二发光元件包括第二发光层；
    在垂直于所述衬底基板的方向上，所述第一电极、所述第一发光层、所述第二发光层和所述第二电极依次堆叠。
  3. 如权利要求1或2所述的显示面板，其中，所述第一发光元件发红光。
  4. 如权利要求1-3任一所述的显示面板，其中，所述第一子像素还包括与所述第一发光元件电连接的第一晶体管，
    所述显示面板还包括第一光吸收层，所述第一光吸收层设置于所述第一晶体管远离所述衬底基板的一侧，并配置为吸收所述红外光以减少所述红外光对所述第一晶体管的照射。
  5. 如权利要求4所述的显示面板，其中，所述第一光吸收层设置于所述第一晶体管与所述第一发光元件之间，所述第一光吸收层包括第一过孔，
    所述第一晶体管通过所述第一过孔与所述第一发光元件电连接。
  6. 如权利要求5所述的显示面板，还包括：
    第一绝缘层，设置于所述第一晶体管与所述第一光吸收层之间，
    其中，所述第一绝缘层包括第二过孔，所述第二过孔与所述第一过孔相连通，以允许所述第一晶体管与所述第一发光元件电连接。
  7. 如权利要求6所述的显示面板，还包括与所述第一感光元件连接的第二晶体管，
    其中，所述第一绝缘层中还包括第三过孔，所述第二晶体管通过所 述第三过孔与所述第一感光元件电连接。
  8. 如权利要求4-7任一所述的显示面板，其中，在垂直于所述衬底基板的方向上，所述第一感光元件设置于所述第一发光元件靠近所述衬底基板的一侧。
  9. 如权利要求8所述的显示面板，其中，所述第一光吸收层中设置有第一开口，
    所述第一感光元件与所述第一开口在垂直于所述衬底基板的方向上至少部分重叠，以通过所述第一开口接收所述红外光被反射后的光线。
  10. 如权利要求9所述的显示面板，还包括位于所述第一感光元件远离所述衬底基板一侧的遮光层，其中，
    所述遮光层在对应所述第一感光元件的位置设置有第二开口，以允许所述第一感光元件透过所述第二开口接收所述红外光被反射后的光线。
  11. 如权利要求4-6任一所述的显示面板，其中，在垂直于所述衬底基板的方向上，所述第一感光元件设置于所述第一发光元件远离所述衬底基板的一侧。
  12. 如权利要求11所述的显示面板，还包括与所述第一感光元件连接的第二晶体管和第二光吸收层，
    其中，所述第二光吸收层设置于所述第二发光元件与所述第一感光元件之间，并配置为吸收所述红外光以减少所述红外光对所述第一感光元件的照射。
  13. 如权利要求1-12任一所述的显示面板，还包括与所述第一子像素相邻的第二子像素，其中，
    所述第一感光元件设置于所述第一子像素与所述第二子像素之间。
  14. 如权利要求13所述的显示面板，还包括第二感光元件以及与所述第一子像素相邻的第三子像素，所述第二感光元件设置于所述第一子像素与所述第三子像素之间，且配置为感测所述红外光被反射后的光线。
  15. 如权利要求1-14任一所述的显示面板，其中，所述红外光的波长范围为760nm-9μm。
  16. 一种显示面板的制作方法，包括：
    提供衬底基板，
    在所述衬底基板上形成第一子像素，所述第一子像素包括第一发光元件，所述第一发光元件配置为发出可见光以进行显示操作；
    形成第二发光元件，所述第二发光元件与所述第一发光元件在垂直于所述衬底基板的方向上层叠设置，所述第二发光元件配置为发出红外光；
    在所述衬底基板上形成第一感光元件，所述第一感光元件配置为感测所述红外光被反射后的光线。
  17. 如权利要求16所述的制作方法，其中，形成所述第一发光元件和所述第二发光元件包括：
    在所述衬底基板上依次堆叠形成第一电极、所述第一发光层、电荷生成层、所述第二发光层和第二电极，
    所述第一发光层和所述第二发光层分别对应所述第一发光元件和所述第二发光元件。
  18. 如权利要求16所述的制作方法，其中，形成所述第一发光元件和所述第二发光元件包括：
    在所述衬底基板上依次堆叠形成第一电极、第一空穴传输层、所述第一发光层、第一电子传输层、电荷生成层、第二空穴传输层、所述第二发光层、第二电子传输层和第二电极，
    所述第一发光层和所述第二发光层分别对应所述第一发光元件和所述第二发光元件。
  19. 如权利要求18所述的制作方法，还包括：
    在所述第一发光层和所述第一电子传输层之间形成电子阻挡层，以及
    在所述第二空穴传输层和所述第二发光层之间形成空穴阻挡层。
  20. 如权利要求17-19任一所述的制作方法，其中，通过蒸镀工艺形成所述第一发光层、所述电荷生成层和所述第二发光层。
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