WO2020184153A1 - Dispositif de recuit laser - Google Patents

Dispositif de recuit laser Download PDF

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Publication number
WO2020184153A1
WO2020184153A1 PCT/JP2020/007185 JP2020007185W WO2020184153A1 WO 2020184153 A1 WO2020184153 A1 WO 2020184153A1 JP 2020007185 W JP2020007185 W JP 2020007185W WO 2020184153 A1 WO2020184153 A1 WO 2020184153A1
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WO
WIPO (PCT)
Prior art keywords
laser
laser beam
substrate
thin film
predetermined region
Prior art date
Application number
PCT/JP2020/007185
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English (en)
Japanese (ja)
Inventor
水村　通伸
義大 塩飽
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株式会社ブイ・テクノロジー
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Publication of WO2020184153A1 publication Critical patent/WO2020184153A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Definitions

  • the present invention relates to a laser annealing device.
  • a thin film transistor (TFT: Thin Film Transistor) is used as a switching element for actively driving a thin display (FPD: Flat Panel Display) such as a liquid crystal display (LCD: Liquid Crystal Display) or an organic EL display (OLED: Organic Electroluminescence Display). It is used.
  • FPD Flat Panel Display
  • LCD Liquid Crystal Display
  • OLED Organic Electroluminescence Display
  • amorphous silicon a-Si: amorphous Silicon
  • p-Si polycrystalline Silicon
  • a predetermined region of the amorphous silicon thin film is instantaneously heated by a laser beam to polycrystallize it to form a polycrystalline silicon thin film having high electron mobility, and the polycrystalline silicon thin film is used for the channel region.
  • a technology to do There is a technology to do.
  • an amorphous silicon thin film is formed on a substrate, and then the amorphous silicon thin film is irradiated with a laser beam such as an excimer laser and laser annealed to melt and solidify in a short time.
  • a laser beam such as an excimer laser and laser annealed to melt and solidify in a short time.
  • a process of crystallizing an amorphous silicon thin film is performed.
  • Patent Document 1 states that by performing this process, the channel region between the source and drain of the TFT can be formed into a polycrystalline silicon thin film having high electron mobility, and the transistor operation can be speeded up. Is described.
  • the channel region between the source and the drain is formed by a polycrystalline silicon thin film in one place. Therefore, the characteristics of the TFT depend on the polycrystalline silicon thin film in one place.
  • the energy density of the laser beam of an excimer laser or the like varies depending on the irradiation (shot)
  • crystal unevenness occurs in the polycrystalline silicon thin film, and the polycrystalline silicon thin film formed by using the laser beam.
  • the electron mobility also varies. Therefore, the characteristics of the TFT formed by using the polycrystalline silicon thin film also depend on the variation in the energy density of the laser beam.
  • the characteristics of the plurality of TFTs contained in the substrate may vary.
  • an object of the present invention is to provide a laser annealing apparatus capable of suppressing variations in the characteristics of a plurality of thin film transistors contained in a substrate.
  • the laser annealing device of the present invention is a laser annealing device that laser-anneals a predetermined region of an amorphous silicon thin film adhered on a substrate to form crystallized silicon, and the first laser beam is applied to the predetermined region. Is irradiated and laser annealed, and then the predetermined region is irradiated with a second laser beam which is a continuously oscillating laser beam to perform laser annealing.
  • the first laser beam is a pulsed laser beam.
  • the first opening for shaping the irradiation shape of the first laser beam according to the shape of the predetermined region and the irradiation shape of the second laser light for matching the shape of the predetermined region is reduced on the amorphous silicon thin film. It is provided with a condensing lens for focusing.
  • the laser annealing device of the present invention is a laser annealing device that laser-anneals a predetermined region of an amorphous silicon thin film adhered on a substrate to obtain crystallized silicon, and is a continuously oscillating laser beam. Is irradiated to the predetermined region and laser annealed.
  • the laser annealing method of the present invention is a laser annealing method in which a predetermined region of an amorphous silicon thin film adhered on a substrate is laser-annealed to obtain crystallized silicon, and the first laser beam is applied to the predetermined region.
  • the present invention includes a step of irradiating the predetermined region with laser annealing and a step of irradiating the predetermined region with a second laser beam which is a continuously oscillating laser beam to perform laser annealing. It is a thing.
  • the present invention can provide a laser annealing apparatus capable of suppressing variations in the characteristics of a plurality of thin film transistors contained in a substrate.
  • FIG. 1 is a schematic configuration diagram of a laser annealing device according to an embodiment of the present invention.
  • FIG. 2 is a diagram showing a method of irradiating a laser beam of the laser annealing apparatus according to the embodiment of the present invention.
  • FIG. 3 is a diagram showing an example of a mask pattern of the laser annealing apparatus according to the embodiment of the present invention.
  • the laser annealing device 10 in the manufacturing process of a semiconductor device including a TFT, irradiates, for example, laser light to a region to be formed in a channel region to perform annealing, and forms the channel region. It is a device for crystallizing a planned region.
  • the laser annealing device 10 is used, for example, when forming a TFT of pixels of a liquid crystal display device.
  • a gate electrode 3 made of a metal film such as Al is formed on the glass substrate 2 of the substrate 1 to be processed.
  • a gate insulating film (not shown) made of a SiN film is formed on the entire surface of the glass substrate 2 by the low temperature plasma CVD method.
  • the amorphous silicon thin film 4 is formed on the gate insulating film by, for example, a plasma CVD method. That is, the amorphous silicon thin film 4 is formed (adhered) on the entire surface of the glass substrate 2.
  • a silicon dioxide (SiO2) film (not shown) is formed on the amorphous silicon thin film 4.
  • the laser annealing device 10 illustrated in FIG. 1 irradiates a predetermined region (a region serving as a channel region in the TFT) on the gate electrode 3 of the amorphous silicon thin film 4 with laser light to perform annealing, and the predetermined region is subjected to the annealing treatment.
  • the region of is crystallized to obtain crystallized silicon.
  • the glass substrate 2 does not necessarily have to be a glass substrate, and may be a substrate of any material such as a resin substrate formed of a material such as resin. Further, the crystallized silicon may be either polycrystalline silicon or single crystal silicon.
  • the laser annealing device 10 includes a base 11, a pulse laser generation unit 12, a continuous oscillation laser generation unit 13, a control unit 14, and a laser beam irradiation unit 20.
  • the base 11 is provided with a substrate transporting means (not shown).
  • the substrate 1 to be processed is placed on the base 11 and transported in the transport direction (board scan direction) indicated by the arrow in the drawing by a substrate transport means (not shown).
  • This transport direction is the same as the extending direction of the gate electrode 3. That is, in the present embodiment, the laser beam irradiation unit 20 does not move during the annealing process, but the substrate 1 to be processed is moved.
  • the pulse laser generation unit 12 includes a laser light source (not shown) and a coupling optical system (not shown).
  • the laser light emitted from the laser light source is expanded by the coupling optical system, the brightness distribution is made uniform, and the laser light is irradiated as the first laser light L1.
  • the laser light source is, for example, an excimer laser that emits laser light having a wavelength of 308 nm or 248 nm at a predetermined repeating period.
  • the first laser beam L1 is reflected by the mirror 15 and irradiates the laser beam irradiation unit 20.
  • the continuous oscillation laser generation unit 13 includes a laser light source (not shown).
  • the laser light emitted from the laser light source is applied to the mirror 16 as the second laser light L2.
  • the laser light source oscillates, for example, continuous wave (CW) laser light.
  • the continuously oscillating laser light is a concept including so-called pseudo continuous oscillation that continuously irradiates the target region with the laser light. That is, even if the laser beam is a pulse laser, it may be a pseudo-continuous oscillation laser in which the pulse interval is shorter than the cooling time of the silicon thin film after heating (irradiation with the next pulse before solidification).
  • the second laser beam L2 is reflected by the mirror 16 and irradiates the polygon mirror 17.
  • the polygon mirror 17 rotates at a predetermined speed, and causes the F ⁇ lens 18 to scan the second laser beam L2 reflected by the mirror 16 at a uniform angular velocity.
  • the F ⁇ lens 18 converts the second laser beam L2 scanned at a uniform angular velocity into a uniform linear velocity and causes the mirror 19 to scan.
  • the second laser beam L2 is reflected by the mirror 19 and scanned by the laser beam irradiation unit 20.
  • the laser beam irradiating unit 20 irradiates the first laser light L1 and the second laser light L2 at predetermined positions on the substrate 1 to be processed, and as shown in FIG. 2, the first laser light L1 A mask pattern 21 and a microlens array 22 are provided in this order from the upstream side to the downstream side in the traveling direction of the second laser beam L2.
  • the mask pattern 21 separates one first laser beam L1 into a plurality of first laser beams L1. Further, the mask pattern 21 irradiates the substrate 1 to be processed with the second laser beam L2 in a predetermined irradiation shape.
  • a light-shielding film such as chromium (cr) or aluminum (Al) is formed on a transparent quartz substrate.
  • the light-shielding film has a plurality of first openings 23 for shaping according to the irradiation shape of the first laser beam L1 irradiated on the substrate 1 to be processed, and the substrate 1 to be processed.
  • a plurality of second openings 24 for shaping according to the irradiation shape of the second laser beam L2 to be irradiated are provided.
  • the first opening 23 is formed in a shape similar to the irradiation shape of the first laser beam L1.
  • the second opening 24 is formed in a shape similar to the irradiation shape of the second laser beam L2.
  • the first opening 23 is, for example, the number of times the first laser beam L1 is irradiated in the substrate scan direction (10 times in the figure) so as to irradiate the gate electrode 3 extending in the substrate scan direction with the first laser beam L1. It is provided.
  • a plurality of first openings 23 (10 in the figure) are provided in a straight line in a direction orthogonal to the substrate scanning direction in accordance with the distance between the gate electrodes 3. This is because the annealing treatment is performed on the substrate 1 to be processed in a grid pattern, and it may be appropriately changed depending on the position on the substrate 1 to be processed where the annealing treatment is desired.
  • One second opening 24 is provided, for example, so as to irradiate the second laser beam L2 once on the gate electrode 3 extending in the substrate scanning direction.
  • a plurality of second openings 24 (10 in the figure) are provided, for example, in a direction orthogonal to the substrate scanning direction in accordance with the distance between the gate electrodes 3.
  • the second opening 24 adjacent to the direction orthogonal to the substrate scanning direction is provided at a distance W in the substrate scanning direction.
  • the distance W is determined by the transport speed of the substrate 1 to be processed and the scan speed in the direction orthogonal to the substrate scan direction of the second laser beam L2.
  • the scanning direction of the second laser beam L2 is from the left to the right in FIG.
  • the second laser beam L2 when the second laser beam L2 reaches the position of the adjacent second aperture 24 in the substrate scanning direction from the second aperture 24, the adjacent second aperture 24 comes to the irradiation position of the second laser beam L2. Set. As a result, by scanning once in the scanning direction, the second laser beam L2 can irradiate the region aligned in the direction orthogonal to the substrate scanning direction with the second laser beam L2.
  • the microlens array 22 reduces and projects the first laser beam L1 passing through the first aperture 23 onto the gate electrode 3.
  • the microlens array 22 reduces and projects the second laser beam L2 passing through the second aperture 24 onto the gate electrode 3.
  • the microlens array 22 has a plurality of microlenses as condensing lenses arranged so that the center of the optical axis is aligned with the center of each opening of the first opening 23 and the second opening 24.
  • the reduction magnification of each microlens is set so that the images of the first aperture 23 and the second aperture 24 are focused on the amorphous silicon thin film 4 on the gate electrode 3.
  • the control unit 14 controls a substrate transport means (not shown) provided on the base 11, a pulse laser generation unit 12, and a continuous oscillation laser generation unit 13. Specifically, the control unit 14 is set to drive and control a substrate transporting means (not shown) to move the substrate 1 to be processed in the substrate scanning direction at a predetermined speed. Further, the control unit 14 is set so that the position information of the region to be modified in the substrate 1 to be annealed is input from the position detecting means (not shown).
  • control unit 14 is set so as to drive and control the pulse laser generation unit 12 and the continuous oscillation laser generation unit 13 to perform the first irradiation and the second irradiation on the substrate 1 to be processed. ing.
  • the control unit 14 emits the pulse laser light as the first laser light L1 from the pulse laser generation unit 12.
  • control unit 14 continuously emits the CW laser light as the second laser light L2 from the continuously oscillating laser generation unit 13.
  • the control unit 14 outputs a drive signal to the pulse laser generation unit 12 when the planned reforming region reaches a predetermined position with respect to the base 11 based on the above-mentioned position information data of the planned reforming region. Is set to.
  • the control unit 14 outputs a drive signal to the continuous oscillation laser generation unit 13 when the planned modification area reaches a predetermined position with respect to the base 11 based on the above-mentioned position information data of the planned modification area. Is set to.
  • Laser annealing method The laser annealing method using the laser annealing apparatus 10 according to the present embodiment will be described.
  • the control unit 14 moves the base 11 by the substrate transport means to move the substrate 1 to be processed at a predetermined scan speed along the substrate scan direction.
  • the control unit 14 outputs a drive signal to the pulse laser generation unit 12 when the planned reforming region reaches a predetermined position based on the position information of the planned reforming region.
  • the first modification area 23 (the most rightmost area in FIG. 2) in the substrate scan direction of the mask pattern 21 is the most upstream first opening 23 in the substrate scan direction.
  • a drive signal is output to the pulsed laser generator 12, after which the substrate 1 to be processed moves in the substrate scan direction, and the area to be modified is the substrate scan.
  • a drive signal is output to the pulsed laser generation unit 12 when it reaches below the next first opening 23 adjacent in the direction.
  • the pulse laser generation unit 12 is used for the number of times of the first opening 23 provided in the substrate scan direction (10 times in the mask pattern 21 of FIG. 3).
  • the region A (see FIG. 2) where the amorphous silicon thin film 4 in the region to be modified is crystallized by being irradiated with the laser beam L1.
  • the first laser beam L1 is uniformly irradiated by the pulsed laser generating unit 12. It is difficult to make it completely uniform, and a variation of several percent occurs. This variation is also affected by the first laser beam L1 that has passed through the microlens of the microlens array 22, and unevenness may occur on the irradiation surface.
  • the second laser beam L2 is irradiated by the continuously oscillating laser generator 13.
  • the annealing treatment is performed again with the continuously oscillating laser light which is the second laser light L2, and the crystal unevenness of the crystallized silicon annealed by the first laser light L1 is made uniform in the irradiated surface.
  • the region A crystallized by the first laser beam L1 located at the most upstream of the second laser beam L2 in the scanning direction is the second most upstream of the second laser beam L2 of the mask pattern 21 in the scanning direction.
  • a drive signal is output to the continuously oscillating laser generation unit 13.
  • the second laser beam L2 emitted from the continuously oscillating laser generation unit 13 is irradiated to the polygon mirror 17, scanned by the mirror 19 through the F ⁇ lens 18, and scanned by the laser beam irradiation unit 20.
  • the distance W of the second opening 24 adjacent in the direction orthogonal to the substrate scanning direction is set based on the substrate scanning speed and the scanning speed of the second laser beam L2, and the substrate 1 to be processed is set.
  • the crystallized region A adjacent to the direction orthogonal to the substrate scanning direction is sequentially irradiated with the second laser beam L2, and annealing treatment is performed. ..
  • the second laser beam L2 scans once in the scanning direction, the second laser beam L2 is sequentially irradiated to the region A in a row adjacent to the direction perpendicular to the substrate scanning direction, and the next second laser beam L2 In this scan, the second laser beam L2 is applied to the row of the next region A in the substrate scanning direction.
  • the continuously oscillating laser beam is emitted to the region. Irradiated and laser annealed. Therefore, even if the characteristics of the plurality of thin film transistors contained in the substrate are varied due to the laser annealing by the first laser beam, the variation in the characteristics of the plurality of thin film transistors can be suppressed by the laser annealing by the continuously oscillating laser light. ..
  • the laser beam irradiation unit 20 is configured such that the irradiation region of the first laser light L1 and the irradiation region of the second laser light L2 are integrated, but the irradiation region of the first laser light L1
  • the irradiation region of the second laser beam L2 may be formed separately. Further, in the irradiation region of the second laser beam L2, the microlens array 22 may be omitted.
  • the device that performs the first irradiation and the device that performs the second irradiation may be different devices.
  • the first opening 23 and the second opening 24 formed in the mask pattern 21 are rectangular, but they are changed according to the irradiation region of the first laser light L1 or the second laser light L2. It doesn't matter.
  • Substrate to be processed 4 Amorphous silicon thin film 10
  • Laser annealing device 12
  • Pulsed laser generator 13
  • Continuous oscillation laser generator 14
  • Control unit 20
  • Laser beam irradiation unit 21
  • Mask pattern 22
  • Microlens array 23
  • 1st aperture 24 2nd aperture

Abstract

L'invention concerne un dispositif de recuit laser comprenant : une unité de génération de laser pulsé 12 qui rayonne un faisceau de lumière laser pulsée en tant que premier faisceau de lumière laser L1 ayant une distribution de luminance uniforme ; une unité de génération de laser à onde continue 13 qui amène un faisceau de lumière laser à onde continue à osciller en tant que second faisceau de lumière laser L2 ; et une unité de rayonnement de faisceau laser 20 qui divise une pluralité de premiers faisceaux de lumière laser L1 à partir d'un premier faisceau de lumière laser L1, et amène le second faisceau de lumière laser L2 à être rayonné avec une forme de rayonnement prescrite sur un substrat 1 en cours de traitement.
PCT/JP2020/007185 2019-03-08 2020-02-21 Dispositif de recuit laser WO2020184153A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019042257A JP2020145363A (ja) 2019-03-08 2019-03-08 レーザアニール装置
JP2019-042257 2019-03-08

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WO2020184153A1 true WO2020184153A1 (fr) 2020-09-17

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JP (1) JP2020145363A (fr)
TW (1) TW202037440A (fr)
WO (1) WO2020184153A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151904A (ja) * 2001-11-14 2003-05-23 Fujitsu Ltd 半導体薄膜の結晶化方法、半導体薄膜、及び、薄膜半導体装置
JP2006156676A (ja) * 2004-11-29 2006-06-15 Sumitomo Heavy Ind Ltd レーザアニール方法
WO2018158648A1 (fr) * 2017-03-01 2018-09-07 株式会社半導体エネルギー研究所 Procédé de génération de code d'affichage, procédé de détection de code d'affichage, système d'authentification et système de communication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151904A (ja) * 2001-11-14 2003-05-23 Fujitsu Ltd 半導体薄膜の結晶化方法、半導体薄膜、及び、薄膜半導体装置
JP2006156676A (ja) * 2004-11-29 2006-06-15 Sumitomo Heavy Ind Ltd レーザアニール方法
WO2018158648A1 (fr) * 2017-03-01 2018-09-07 株式会社半導体エネルギー研究所 Procédé de génération de code d'affichage, procédé de détection de code d'affichage, système d'authentification et système de communication

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JP2020145363A (ja) 2020-09-10
TW202037440A (zh) 2020-10-16

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