JP2020145363A - レーザアニール装置 - Google Patents

レーザアニール装置 Download PDF

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Publication number
JP2020145363A
JP2020145363A JP2019042257A JP2019042257A JP2020145363A JP 2020145363 A JP2020145363 A JP 2020145363A JP 2019042257 A JP2019042257 A JP 2019042257A JP 2019042257 A JP2019042257 A JP 2019042257A JP 2020145363 A JP2020145363 A JP 2020145363A
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JP
Japan
Prior art keywords
laser beam
laser
substrate
thin film
predetermined region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019042257A
Other languages
English (en)
Japanese (ja)
Inventor
水村　通伸
Michinobu Mizumura
通伸 水村
義大 塩飽
Yoshihiro SHIOAKU
義大 塩飽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
V Technology Co Ltd
Original Assignee
V Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by V Technology Co Ltd filed Critical V Technology Co Ltd
Priority to JP2019042257A priority Critical patent/JP2020145363A/ja
Priority to PCT/JP2020/007185 priority patent/WO2020184153A1/fr
Priority to TW109106672A priority patent/TW202037440A/zh
Publication of JP2020145363A publication Critical patent/JP2020145363A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
JP2019042257A 2019-03-08 2019-03-08 レーザアニール装置 Pending JP2020145363A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019042257A JP2020145363A (ja) 2019-03-08 2019-03-08 レーザアニール装置
PCT/JP2020/007185 WO2020184153A1 (fr) 2019-03-08 2020-02-21 Dispositif de recuit laser
TW109106672A TW202037440A (zh) 2019-03-08 2020-03-02 雷射退火裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019042257A JP2020145363A (ja) 2019-03-08 2019-03-08 レーザアニール装置

Publications (1)

Publication Number Publication Date
JP2020145363A true JP2020145363A (ja) 2020-09-10

Family

ID=72354550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019042257A Pending JP2020145363A (ja) 2019-03-08 2019-03-08 レーザアニール装置

Country Status (3)

Country Link
JP (1) JP2020145363A (fr)
TW (1) TW202037440A (fr)
WO (1) WO2020184153A1 (fr)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003151904A (ja) * 2001-11-14 2003-05-23 Fujitsu Ltd 半導体薄膜の結晶化方法、半導体薄膜、及び、薄膜半導体装置
JP4092414B2 (ja) * 2004-11-29 2008-05-28 住友重機械工業株式会社 レーザアニール方法
JP7051806B2 (ja) * 2017-03-01 2022-04-11 株式会社半導体エネルギー研究所 認証システム及び通信システム

Also Published As

Publication number Publication date
WO2020184153A1 (fr) 2020-09-17
TW202037440A (zh) 2020-10-16

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