WO2020179575A1

WO2020179575A1 - Film-forming apparatus and material gas feeding method

Info

Publication number: WO2020179575A1
Application number: PCT/JP2020/007693
Authority: WO
Inventors: 津田　栄之輔
Original assignee: 東京エレクトロン株式会社
Priority date: 2019-03-07
Filing date: 2020-02-26
Publication date: 2020-09-10
Also published as: JP2020143351A

Abstract

This film-forming apparatus is for forming a predetermined film on a substrate, and has: a treatment container which is configured to be capable of being decompressed and which houses the substrate therein; a material tank in which a liquid material or a solid material is stored; a feed pipe which connects the material tank and the treatment container in such a manner as to allow a material gas generated by vaporization of the liquid or solid material within the material tank to be fed into the treatment container; a pressure regulation valve which is provided to the feed pipe and which is capable of adjusting a valve opening thereof; a pressure sensor for measuring the pressure inside the material tank; and a control unit for controlling the pressure regulation valve on the basis of a measurement result of the pressure sensor.

Description

Film formation equipment and raw material gas supply method

The present disclosure relates to a film forming apparatus and a raw material gas supply method.

Patent Document 1 discloses a ruthenium (Ru) film forming apparatus, which includes a film forming apparatus main body that performs a film forming process on a semiconductor wafer (hereinafter referred to as “wafer”), and a film forming apparatus main body. On the other hand, an apparatus having a raw material gas supply system for supplying the raw material gas is disclosed. The raw material gas supply system of the film forming apparatus has a raw material tank for storing Ru ₃ (CO) ₁₂ as a solid raw material, one end connected to the raw material tank, and the other end connected to a processing container of the main body of the film forming apparatus. And a raw material passage. The processing container has a mounting table on which a wafer is mounted inside, and is connected to a vacuum exhaust system for maintaining a reduced pressure atmosphere in the processing container. Further, in the film forming apparatus, in order to vaporize a large amount of the raw material gas having a low vapor pressure, the pressure in the processing container is lowered and the pressure in the raw material tank is lowered.

JP-A-2009-84625

The technique according to the present disclosure provides a constant supply of a raw material gas to a processing container of a film forming apparatus that forms a predetermined film using a raw material gas generated by vaporizing the raw material, regardless of the pressure inside the processing container. ..

One aspect of the present disclosure is a film forming apparatus for forming a predetermined film on a substrate, which is configured to be decompressible, a processing container which stores the substrate, a raw material tank which stores a liquid raw material or a solid raw material, and A pressure sensor for measuring the pressure in the raw material tank, the raw material tank and the processing container so that the raw material gas generated by vaporizing the liquid raw material or the solid raw material in the raw material tank is supplied to the processing container. And a control pipe that controls the pressure control valve based on a measurement result of the pressure sensor.

According to the technique of the present disclosure, a constant supply of a raw material gas to a processing container of a film forming apparatus that forms a predetermined film by using a raw material gas generated by vaporizing a raw material, regardless of the pressure in the processing container It can be performed.

It is explanatory drawing which shows the outline of a structure of the film-forming apparatus concerning 1st Embodiment typically. It is explanatory drawing which shows the outline of a structure of a raw material tank typically. It is explanatory drawing which shows the outline of a structure of the film-forming apparatus concerning 2nd Embodiment typically. It is explanatory drawing which shows the outline of a structure of the film-forming apparatus concerning 3rd Embodiment typically.

In the manufacturing process of a semiconductor device, various processes such as a film forming process for forming a predetermined film such as a metal film are repeatedly performed on a semiconductor wafer (hereinafter referred to as “wafer”), thereby forming a predetermined film on the wafer. The desired semiconductor device is manufactured.

By the way, in the film forming process, a solid raw material or a liquid raw material may be heated and vaporized to be a raw material gas.
For example, in the film forming apparatus disclosed in Patent Document 1, when a ruthenium (Ru) film is formed, Ru ₃ (CO) ₁₂ that is a solid raw material is heated and sublimated, and the generated raw material gas is generated by a carrier gas. It is made to flow into the processing container of the membrane device.
The raw material gas for the Ru film produced by sublimating Ru ₃ (CO) ₁₂ as described above has a low vapor pressure. Therefore, in the film forming apparatus disclosed in Patent Document 1, the pressure in the raw material tank is lowered by lowering the pressure in the processing container so that a large amount of raw material gas having a low vapor pressure is vaporized.

However, when the pressure in the raw material tank is lowered by lowering the pressure in the processing container as disclosed in Patent Document 1, the pressure in the raw material tank is affected by the pressure in the processing container. Therefore, since the vaporization amount of the solid raw material in the raw material tank changes depending on the pressure in the processing container, the supply amount of the raw material gas changes depending on the pressure in the processing container. That is, the constant supply of the source gas cannot be performed regardless of the pressure in the processing container.

Therefore, the technique according to the present disclosure is to constantly supply the raw material gas to the processing container of the film forming apparatus that forms a predetermined film by using the raw material gas generated by vaporizing the raw material, regardless of the pressure in the processing container. Is possible.

The film forming apparatus and the source gas supply method according to this embodiment will be described below with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and duplicate description will be omitted.

(First embodiment)
FIG. 1 is an explanatory view schematically showing an outline of the configuration of the film forming apparatus 1 according to the first embodiment, and shows a part of the film forming apparatus 1 in a cross section. The film forming apparatus 1 of this example is configured to form a Ru film on the wafer W by using Ru ₃ (CO) ₁₂ , which is a solid raw material, as a raw material.
As shown in FIG. 1, the film forming apparatus 1 is configured to be decompressible and has a processing container 10 for accommodating a wafer W as a substrate and a raw material gas supply mechanism 50 for supplying a raw material gas to the processing container 10. ..

The processing container 10 is made of, for example, a metal material, and the inside thereof is formed in a cylindrical shape.
The side wall 11 of the processing container 10 is provided with a carry-in outlet (not shown) for the wafer W, and the carry-in outlet is provided with a gate valve (not shown) for opening and closing the carry-in outlet.
Further, a pressure sensor 20 provided outside the processing container 10 is connected to the side wall 11 of the processing container 10 via a pipe 21. The pressure sensor 20 is, for example, a capacitance manometer, and measures the pressure in the processing container 10 via the pipe 21. The measurement result of the pressure sensor 20 is output to the control unit 110 described later.

An exhaust port 12a is formed in the bottom wall 12 of the processing container 10. In addition, the bottom wall 12 is connected to the accommodation portion 22 so that an opening 22a in the upper portion of the accommodation portion 22 that accommodates a bellows 33, which will be described later, communicates with the exhaust port 12a. The accommodating portion 22 has

openings

22a and 22b in the upper and side portions, and the

openings

22a and 22b communicate with each other. One end of an exhaust pipe 23 is connected to a side portion of the housing portion 22 so that the processing container 10 is exhausted through the

openings

22a and 22b. The other end of the exhaust pipe 23 is connected to an exhaust device 24 which is, for example, a vacuum pump. Further, an APC valve 25 as a pressure adjusting valve for adjusting the pressure inside the processing container 10 is provided upstream of the exhaust device 24 in the exhaust pipe 23. The APC valve 25 has an automatic pressure adjusting function and a shutoff function, and the opening degree of the APC valve 25 is controlled based on a control signal from the control unit 110 described later. With the APC valve 25, the pressure inside the processing container 10 can be adjusted to a preset pressure, and the connection between the processing container 10 and the exhaust device 24 can be cut off.

In the processing container 10, a mounting table 30 having a circular shape in a plan view is provided on which the wafer W is mounted horizontally. A heater (not shown) for heating the wafer W is provided inside the mounting table 30. In the central portion on the lower surface side of the mounting table 30, the bottom wall 12 penetrates through the exhaust port 12a of the bottom wall 12 of the processing container 10, and further extends in the vertical direction so as to penetrate the bottom wall 22c of the accommodating portion 22. The upper end of the supporting member 31 is connected. The lower end of the support member 31 is connected to the lifting mechanism 32. The mounting table 30 can be moved up and down between the upper first position and the lower second position by driving the lifting mechanism 32 controlled by the control unit 110 described later.

The first position is a processing position where processing is performed on the wafer W. The processing space S is formed by the mounting table 30 located at the processing position and the partition wall 13 a that extends downward from the top wall 13 of the processing container 10 to partition the inside and outside of the processing container 10. A gap K is formed between the upper surface of the mounting table 30 located at the processing position and the lower surface of the partition wall 13a, and the processing space S can be evacuated through the gap K.
The second position is provided below the inside of the processing container 10 and a transfer mechanism (not shown) of the wafer W that enters the processing container 10 through the above-mentioned loading/unloading port (not shown) of the processing container 10. This is a standby position where the mounting table 30 stands by when the wafer W is being delivered to and from the delivery pin (not shown).

Further, the support member 31 is provided with a flange 31a. A bellows 33 is provided between the lower surface of the flange 31a and the upper surface of the bottom wall 22c of the housing portion 22 so as to surround the outer periphery of the support member 31. Since the bellows 33 is provided, the airtightness of the processing container 10 is not lost due to the penetrating portion of the support member 31 in the bottom wall 22c of the housing portion 22.

Further, above the mounting table 30 in the processing container 10, an obstacle plate 40 is provided in parallel with the mounting table 30 as a gas flow forming member for forming the flow of the raw material gas in the processing space S. The baffle plate 40 is a member that partitions the processing space S into upper and lower parts, and is supported by a supporting member (not shown). The baffle plate 40 forms the following flow of raw material gas. That is, the raw material gas supplied through the gas supply port 13b provided in the center of the top wall 13 of the processing container 10 moves outward along the upper surface of the baffle plate 40, and then outside the baffle plate 40. This is the flow of the raw material gas that moves downward from that portion and moves toward the wafer W on the mounting table 30.

Further, a source gas supply mechanism 50 is connected to the ceiling wall 13 of the processing container 10.

The raw material gas supply mechanism 50 has a raw material tank 51 that stores a solid raw material.

Here, the raw material tank 51 will be described with reference to FIG. FIG. 2 is an explanatory view schematically showing an outline of the configuration of the raw material tank 51, and the raw material tank 51 is shown in a vertical cross section.
The raw material tank 51 has a housing 51a formed in a cylindrical shape using a metal material or the like.
An accommodation chamber R1 for accommodating the solid raw material M is formed in the housing 51a, and in the accommodation chamber R1, base trays 51b and 2 having a circular shape in plan view are provided as trays on which the solid raw material M is placed. Two upper trays 51c each having an annular shape in plan view are provided. The number of upper trays 51c may be one or three or more.

When the two stacked upper trays 51c are stacked on the base tray 51b, a partition wall 51d is formed by the outer wall of each

tray

51b, 51c. The partition wall 51d is formed so as to connect the top wall 51e and the bottom wall 51f of the housing 51a, and partitions the space inside the housing 51a into the inside and the outside. A carrier gas supply space 51h is formed between the partition wall 51d and the outer peripheral wall 51g of the housing 51a. The carrier gas supply space 51h is connected to one end of a conduit 51j formed inside the frame portion of the housing 51a. The pipeline 51j is formed so that the carrier gas passes through the top wall 51e, the outer peripheral wall 51g, and the bottom wall 51f to reach the carrier gas supply space 51h. Further, the other end of the conduit 51j is connected to one end of a supply pipe 61 of a carrier gas supply mechanism 60 that supplies a carrier gas. The other end of the supply pipe 61 is connected to the carrier gas supply source 62. The supply pipe 61 is provided with a flow rate control unit (not shown) such as a mass flow controller and an opening/closing valve 63 for starting or stopping the supply of carrier gas. In this example, the carrier gas supplied from the carrier gas supply mechanism 60 is carbon monoxide (CO) gas. Further, the supply pipe 61 is provided with a carrier gas heating unit (not shown) for heating the carrier gas. The flow rate control unit, the on-off valve 63, and the carrier gas heating unit are controlled by the control unit 110 described later. Further, the supply pipe 61 is provided with a temperature sensor (not shown) for controlling the temperature of the supply pipe 61. The measurement result by the temperature sensor is output to the control unit 110 described later. For this temperature sensor, for example, a sensor using platinum is used.

Also, openings 51k are formed in the outer wall of each of the base tray 51b and the upper tray 51c.

With such a configuration, the carrier gas supplied from the carrier gas supply mechanism 60 is supplied from the outside of the

trays

51b and 51c above the solid raw material M placed on the base tray 51b and the upper tray 51c. After that, the carrier gas is supplied to the processing container 10 through the opening 51m formed in the center of the top wall 51e toward the center of the housing 51a, together with the source gas generated by the sublimation of the solid material M. To.

Further, the housing 51a is provided with a tank heating unit 70 so as to cover the entire body. The tank heating unit 70 heats the raw material tank 51, specifically, the casing 51a. The heating by the tank heating unit 70 can promote the sublimation of the solid raw material in the housing 51a. The tank heating unit 70 is controlled by the control unit 110 described later.

Further, a pressure sensor 80 provided outside the housing 51a is connected to the top wall 51e of the housing 51a via a pipe 81. The pressure sensor 80 is, for example, a capacitance manometer, and measures the pressure inside the housing 51a as the pressure of the raw material tank 51 via the pipe 81.
Furthermore, a temperature sensor 90 for measuring the temperature of the raw material tank 51, specifically, the temperature of the housing 51a is provided on the outer peripheral wall 51g of the housing 51a. The temperature sensor 90 is, for example, a sensor using platinum. Although the number of temperature sensors 90 is one in the example shown in the figure, a plurality of temperature sensors 90 may be provided.
The measurement results of the pressure sensor 80 and the temperature sensor 90 are output to the control unit 110 described later.

Returning to the explanation of FIG.
The raw material gas supply mechanism 50 has, in addition to the above-described raw material tank 51, a supply pipe 52 that connects the raw material tank 51 and the processing container 10 to supply the raw material gas from the raw material tank 51 to the processing container 10. One end of the supply pipe 52 is connected to the top wall 51e of the housing 51a of the raw material tank 51, and the other end is connected to the top wall 13 of the processing container 10. The top wall 51e is connected via the supply pipe 52. 51m and the gas supply port 13b of the ceiling wall 13 communicate with each other.

The supply pipe 52 is provided with an on-off valve 53 that opens or closes the pipeline in the supply pipe 52. The on-off valve 53 is controlled by the control unit 110 described later.
Further, between the opening/closing valve 53 in the supply pipe 52 and the raw material tank 51, a pressure adjusting valve for adjusting the pressure in the raw material tank 51, specifically, the pressure in the housing 51a of the raw material tank 51 is provided. APC valve 54 is provided. The APC valve 54 has an automatic pressure adjusting function and a shutoff function, and the opening degree of the APC valve 54 is controlled based on a control signal from the control unit 110 described later. By the APC valve 54, the pressure in the raw material tank 51 (specifically, the pressure in the housing 51a of the raw material tank 51) is adjusted to a preset pressure, or the pipeline in the supply pipe 52 is closed. You can

Further, the supply pipe 52 is provided with a supply pipe heating unit 55. The supply pipe heating unit 55 heats the entire supply pipe 52 including the on-off valve 53 and the APC valve 54. As a result, it is possible to prevent the raw material gas from solidifying and adhering to the supply pipe 52 including the on-off valve 53 and the APC valve 54.
In order to prevent the raw material gas from resolidifying and adhering to the inner wall of the processing container 10, the processing container heating unit 100 for heating the processing container 10 is provided in the film forming apparatus 1.

The supply pipe heating unit 55 and the processing container heating unit 100 are controlled by the control unit 110 described later.
Further, a temperature sensor (not shown) is provided in the supply pipe 52 for temperature control of the supply pipe 52 by the supply pipe heating unit 55, and the processing container 10 is provided for temperature control of the processing container 10 by the processing container heating unit 100. For example, a temperature sensor (not shown) is provided on the side wall 11. The measurement results by these temperature sensors are output to the control unit 110 described later. As these temperature sensors, for example, a sensor using platinum is used.

The film forming apparatus 1 configured as described above is provided with the control unit 110. The control unit 110 is composed of, for example, a computer equipped with a CPU, a memory, or the like, and has a program storage unit (not shown). The program storage unit also stores a program for controlling the

APC valves

25 and 54, the on-off valve 53, and the like to realize the wafer processing described later in the film forming apparatus 1. The program may be stored in a computer-readable storage medium and installed in the control unit 110 from the storage medium. Further, part or all of the program may be realized by dedicated hardware (circuit board).

Next, the wafer processing performed using the film forming apparatus 1 will be described.

First, in a state where the on-off

valve

53 and 63 and the APC valve 54 is closed, together with the direct _{N 2} gas is supplied from the _{N 2} gas supply line (not shown) into the processing chamber 10, the pressure sensor 20 The opening degree of the APC valve 25 is adjusted on the basis of the measurement result in (1), and the inside of the processing container 10 is set to a predetermined pressure (for example, 7 to 10 Torr). In this state, a gate valve (not shown) provided at a carry-in/out port (not shown) of the wafer W of the processing container 10 is opened, and a transfer chamber (not shown) in a vacuum atmosphere adjacent to the processing container 10 is opened. A transfer mechanism (not shown) holding the wafer W is inserted into the processing container 10 through the carry-in / out port. Then, the wafer W is conveyed above the mounting table 30 located at the above-mentioned standby position. Next, the wafer W is transferred onto the raised support pins (not shown), and then the transfer mechanism is taken out of the processing container 10 and the gate valve is closed. At the same time, the support pins are lowered and the mounting table 30 is raised, the wafer W is mounted on the mounting table 30, the mounting table 30 is moved to the processing position, and the processing space S is formed. ..

Next, the wafer W is heated to a predetermined temperature (for example, 120 to 250 ° C.) by the heater provided on the mounting table 30.

When the temperature of the wafer W reaches the predetermined temperature, the opening degree of the APC valve 25 is adjusted, and the pressure inside the processing container 10 is reduced to a predetermined pressure (for example, 5 mTorr to 100 mTorr).
When the depressurization in the processing container 10 is completed, the on-off

valves

53 and 63 are opened and the opening degree of the APC valve 54 is increased so that the supply of the raw material gas to the processing space S in the processing container 10 is started. Adjusted. As a result, the formation of the Ru film on the wafer W in the processing space S by CVD (Chemical Vapor Deposition) is started. The opening degree of the APC valve 54 is set by, for example, the pressure inside the raw material tank 51 (specifically, the pressure inside the housing 51a of the raw material tank 51) after the on-off

valves

53 and 63 are opened. It is adjusted to be gradually increased until it reaches 40 mTorr to 150 mTorr). When the set pressure is reached, thereafter, the opening of the APC valve 54 is controlled based on the measurement result of the pressure sensor 80 until the Ru film formation is completed, and the pressure in the raw material tank 51 is set to the set pressure. Is adjusted to be constant. When the pressure in the raw material tank 51 is maintained constant at the set pressure, the on-off valve 63 on the carrier gas supply mechanism 60 is closed. The on-off valve 63 is opened to adjust the pressure whenever fluctuations (such as an increase in the opening of the APC valve 25) occur downstream of the raw material tank 51.

When the formation of the Ru film is completed, the opening/

closing valves

53 and 63 are closed, and the wafer W is unloaded from the processing container 10 in the reverse procedure.

During the formation process of the Ru film, that is, from the opening state to the closing state of the on-off

valves

53 and 63, a predetermined temperature (for example, 80 ° C.) is provided by the carrier gas heating unit (not shown). The carrier gas heated to the surface is supplied at a constant flow rate.
Further, during the wafer processing described above, the temperatures of the raw material tank 51, the supply pipe 52, and the processing container 10 are set to the

heating units

70, 55 based on the measurement results of the corresponding temperature sensors so that the raw material gas does not solidify at least. , 100 is constantly heated so as to be constant at a predetermined temperature. For example, the supply pipe 52 and the processing container 10 are heated and controlled so as to be constant at 80 ° C., and the raw material tank 51 has a temperature slightly lower than that of the supply pipe 52 and the processing container 10 and higher than that of the supply pipe 52 and the processing container 10. Therefore, the heating is controlled so as to be constant at a predetermined temperature lower than the decomposition temperature of the solid raw material (for example, 70 ° C. to 100 ° C. lower than the decomposition temperature at the set pressure).

As described above, in the present embodiment, the supply pipe 52 that connects the raw material tank 51 and the processing container 10 to each other is formed on the basis of the pressure sensor 80 that measures the pressure in the housing 51a of the raw material tank 51 during film formation. The APC valve 54 provided is controlled. Therefore, in the Ru film forming process, the pressure in the raw material tank 51 can be kept constant regardless of the pressure in the processing container 10. Therefore, the raw material gas can be constantly supplied regardless of the pressure in the processing container 10.
Further, since the pressure in the raw material tank 51 is controlled only by adjusting the opening degree of the APC valve 54, the control is easy.

In addition, the fact that the pressure in the processing container 10 and the pressure in the raw material tank 51 are independently controlled as in the present embodiment means that the pressure in the processing container 10 and the supply amount of the raw material gas are controlled. It means that they are controlled independently. In the present embodiment, the pressure inside the processing container 10 and the supply amount of the raw material gas are independently controlled. Therefore, when a problem occurs in the film forming process, the problem is the pressure inside the processing container 10. It is possible to distinguish whether the cause is the treatment condition related to the above or the processing condition related to the supply amount of the raw material gas.

Further, when the configuration inside the processing container 10 is different (for example, even when the shape of the baffle plate 40 is changed), the conductance inside the processing container 10 is also different. The pressure on the upstream side of the different part also differs. Therefore, when the internal structure of the processing container 10 is different, the internal pressure of the raw material tank is different and the supply amount of the raw material gas is also different in the structure of Patent Document 1. On the other hand, in the present embodiment, since the pressure of the raw material tank 51 is controlled independently, the same amount of raw material gas can be supplied even when the internal structure of the processing container 10 is different.

The set pressure in the raw material tank 51 may be variable depending on the measurement result of the pressure sensor 20 for the processing container 10. For example, when the measurement result by the pressure sensor 20 is high so that the pressure difference between the pressure in the raw material tank 51 and the pressure in the processing container 10 is constant, the pressure in the raw material tank 51 is increased to increase the pressure sensor. When the measurement result at 20 is low, the pressure in the raw material tank 51 may be lowered.

Further, in the present embodiment, the temperature of the housing 51a of the raw material tank 51 is set to be high. Specifically, the temperature of the raw material tank 51 is set to be constant at a predetermined temperature (for example, 90 to 100 ° C.) which is higher than the supply pipe 52 and the processing container 10 and lower than the decomposition temperature of the solid raw material. There is. Therefore, the supply amount of the raw material gas is the same as when the pressure in the housing 51a of the raw material tank 51 is higher than the pressure in the processing container 10 but the pressure in the housing 51a is substantially equal to the pressure in the processing container 10. It can be equal or higher.
The temperature of the housing 51a of the raw material tank 51 may be variable according to the set pressure in the raw material tank 51. For example, when the set pressure is high, the temperature of the housing 51a of the raw material tank 51 may be raised. As a result, the supply amount of the raw material gas can be increased as long as the solid raw material is not decomposed.

Furthermore, in the present embodiment, a temperature sensor 90 using platinum is used as the temperature sensor 90 for measuring the temperature of the housing 51a of the raw material tank 51. Therefore, the temperature of the housing 51a of the raw material tank can be controlled with high accuracy based on the measurement result of the temperature sensor 90, and the supply amount of the raw material gas can be controlled with high accuracy.
A platinum sensor is also used as the temperature sensor for the processing container 10 and the

supply pipes

52 and 61. Therefore, the temperatures of the processing container 10 and the

supply pipes

52 and 61 can be controlled with high accuracy.

Furthermore, in the present embodiment, in the wafer processing, the APC valve 54 is operated from the time when the on-off valve 53 is opened until the pressure in the raw material tank 51 reaches the set pressure, that is, in the initial stage of the Ru film formation. The opening degree of is gradually increased. Therefore, it is possible to prevent a large amount of the raw material gas accumulated in the raw material tank 51 from flowing into the processing container 10 while the APC valve 54 is closed in the initial stage of the Ru film formation.
In the above description, both the opening/closing valve 53 and the APC valve 54 are closed when the wafer W is loaded/unloaded or when the wafer W is heated, but only the APC valve 54 may be closed. ..

Further, in the present embodiment, the source gas is supplied to the processing container 10 in the low pressure atmosphere from the casing 51a of the raw material tank 51 in the atmosphere higher than the pressure inside the processing container 10, that is, the high pressure atmosphere. Therefore, since the raw material gas from the raw material tank 51 in the high-pressure atmosphere expands in the processing container 10, the number of molecules that react with the wafer W in the processing space S is large, so that the film formation rate can be increased.

The APC valve 54 may be arranged in the immediate vicinity of the processing container 10. More specifically, the distance from the upper surface of the ceiling wall 13 of the processing container 10 to the lower surface of the APC valve 54 is 10 mm or less. It may be placed in. Considering from the raw material tank 51 to the APC valve 54 of the supply pipe 52 as a raw material gas storage container, by disposing the APC valve 54 near the processing container 10, the raw material gas in the storage container is processed by the processing container. When supplied to the inside of the processing container 10, the pressure is first lowered in the immediate vicinity of the processing container 10. Therefore, decomposition of the raw material gas due to the pressure gradient can be prevented up to the vicinity of the top wall 13 of the processing container 10.

(Second embodiment)
FIG. 3 is an explanatory view schematically showing the outline of the configuration of the film forming apparatus 1a according to the second embodiment, and a part of the film forming apparatus 1a is shown in cross section.
In the film forming apparatus 1a of FIG. 3, one end of the exhaust bypass pipe 120 is connected between the on-off valve 53 and the APC valve 54 in the supply pipe 52. The other end of the exhaust bypass pipe 120 is connected to the exhaust device 24. The exhaust bypass pipe 120 communicates the raw material tank 51 and the exhaust device 24 without passing through the processing container 10. The exhaust bypass pipe 120 is provided with an on-off valve 121 that opens or closes the pipeline of the exhaust bypass pipe 120.
In order to prevent the raw material gas from resolidifying and adhering to the inner wall of the exhaust bypass pipe 120, an exhaust bypass pipe heating unit (not shown) for heating the exhaust bypass pipe 120 is provided in the film forming apparatus 1. ing. Further, in order to control the temperature of the exhaust bypass pipe 120, the exhaust bypass pipe 120 is provided with a temperature sensor (not shown) that measures the temperature of the exhaust bypass pipe 120. The measurement result of this temperature sensor is output to the control unit 110, and the exhaust bypass pipe 120 is controlled by the control unit 110.

Next, the wafer processing performed using the film forming apparatus 1a will be described.

In the wafer processing using the film forming apparatus 1 of the first embodiment, the APC valve 54 is closed and the opening/closing valve 63 of the carrier gas supply mechanism 60 is closed when the wafer W is loaded and unloaded. It was
On the other hand, in the wafer processing performed using the film forming apparatus 1a, the opening of the APC valve 54 is constantly adjusted based on the measurement result of the pressure sensor 80, including when the wafer W is loaded and unloaded, and the opening/closing valve is opened. 63 is opened. However, while the on-off valve 53 is in the closed state, the on-off valve 121 provided in the exhaust bypass pipe 120 is in the open state.
Then, in the present wafer processing, when the supply of the source gas to the processing container 10 is started, the open/close valve 53 is changed from the closed state to the open state, and the open/close valve 121 is changed from the open state to the closed state. As a result, a large amount of raw material gas is prevented from flowing into the processing container 10 immediately after the on-off valve 53 is opened.
When the on-off valve 53 is changed from the closed state to the open state, the on-off valve 121 provided in the exhaust bypass pipe 120 may be left in the open state.

(Third Embodiment)
FIG. 4 is an explanatory view schematically showing an outline of the configuration of the film forming apparatus 1b according to the third embodiment, and shows a part of the film forming apparatus 1b in a cross section.
In the film forming apparatus 1b of FIG. 4, the housing 51a of the raw material tank 51 has a buffer chamber R2 inside which stores the raw material gas on the downstream side of the storage chamber R1. The storage chamber R1 and the buffer chamber R2 are separated by a partition wall 51n having an opening 51p.
According to the present embodiment, since the raw material gas can be accumulated in the buffer chamber R2, the raw material gas can be stably supplied to the processing container 10.

When the buffer chamber R2 is provided as in the present embodiment, the pressure measurement target by the pressure sensor 80 may be the buffer chamber R2 instead of the accommodation chamber R1. Further, the supply destination of the gas from the carrier gas supply mechanism 60 may be the buffer chamber R2 instead of the accommodation chamber R1.

In the above description, the casing 51a of the raw material tank 51 is heated by one heating unit, but the region of the casing 51a is divided into a plurality of regions, the heating unit is provided for each region, and the temperature control is performed for each region. You may do it. The same applies to the heating section for the supply pipe 52, the processing container 10, and the carrier gas supply pipe. When heating is performed for each region as described above, one or a plurality of temperature sensors are provided for each region.
When heating in each region as described above, regarding the members such as the

supply pipes

52 and 61 that are provided with various valves and flow rate control units, the regions where various valves are provided and other regions are different. You may divide. This is because the temperatures of various valves and flow control units and the piping may differ even if the amount of heating is the same.

Various heaters such as a silicon rubber heater, a jacket type heater, and a ribbon heater can be used for each heating unit.
Further, the set temperature of the raw material tank 51 (specifically, the set temperature of the housing 51a) and the set temperature of other parts such as the supply pipe 52 may be independent, but depending on the set temperature of the raw material tank 51, The set temperature of the other parts may be changed.

In the above description, Ru ₃ (CO) ₁₂ is used as the solid raw material for the Ru film, but other solid raw materials may be used.
A liquid raw material may be used instead of the solid raw material. The solid raw material means a solid raw material at atmospheric pressure and room temperature, and the liquid raw material means a liquid raw material at atmospheric pressure and room temperature.

In the above explanation, the Ru film was formed. However, the technique according to the present disclosure can also be applied to an apparatus that forms another film by using a raw material gas generated by vaporizing a solid raw material or a liquid raw material.

Further, in the above description, CO gas is used as the carrier gas, but a rare gas such as Ar gas or an inert gas such as N ₂ can be used. However, by using CO gas, decomposition of the raw material gas can be prevented.

In the above description, the APC valve 54 is provided on the upstream side of the opening/closing valve 53, but the APC valve 54 may be provided on the downstream side of the opening/closing valve 53. Further, the opening/closing valve 53 may be omitted, and the APC valve 54 may be provided at the position of the opening/closing valve 53, that is, the position of the supply pipe 52 on the processing container 10 side.

The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. The above-described embodiment may be omitted, replaced, or changed in various forms without departing from the scope of the appended claims and the gist thereof.

The following configurations also belong to the technical scope of the present disclosure.
(1) A film forming apparatus for forming a predetermined film on a substrate,
A processing container that is configured to be depressurizable and that stores the substrate,
A raw material tank for storing a liquid raw material or a solid raw material,
A supply pipe connecting the raw material tank and the processing container, so that the raw material gas generated by vaporizing the liquid raw material or the solid raw material in the raw material tank is supplied to the processing container,
A pressure adjusting valve provided in the supply pipe and having a variable opening degree;
A pressure sensor for measuring the pressure in the raw material tank,
A film forming apparatus including a control unit that controls the pressure adjusting valve based on the measurement result of the pressure sensor.
In the above (1), the pressure regulating valve provided in the supply pipe connecting the raw material tank and the processing container is controlled based on the measurement result of the pressure sensor that measures the pressure in the raw material tank. Therefore, in the predetermined film forming process, the pressure in the raw material tank can be kept constant regardless of the pressure in the processing container. Therefore, a constant supply of the raw material gas can be performed regardless of the pressure in the processing container.

(2) The film forming apparatus according to (1), wherein the control unit controls the pressure adjusting valve so that the pressure in the raw material tank becomes higher than the pressure in the processing container at the time of film formation.

(3) A temperature sensor for measuring the temperature of the raw material tank and
It has a heating unit that heats the raw material tank,
The control unit further controls the heating unit so that the temperature of the raw material tank becomes higher than the temperature of the supply pipe based on the measurement result of the temperature sensor, according to the above (1) or (2). The film forming apparatus described.
According to (3) above, since the raw material tank is made to have a high temperature, the pressure in the raw material tank processes the supply amount of the raw material gas even if the pressure in the raw material tank is higher than the pressure in the processing container. It can be equal to or higher than the pressure in the container.

(4) The film forming apparatus according to (3) above, wherein the temperature sensor uses platinum.
According to the above (4), the temperature of the raw material tank can be controlled with high accuracy, and the supply amount of the raw material gas can be controlled with high accuracy.

(5) The raw material tank according to any one of (1) to (4) above, wherein the raw material tank has a buffer chamber for accumulating the raw material gas on the downstream side of the storage chamber for accommodating the liquid raw material or the solid raw material. Film forming equipment.

(6) The film forming apparatus according to any one of (1) to (5), further including a carrier gas supply mechanism that supplies a carrier gas to the raw material tank.

(7) The film forming apparatus according to any one of (1) to (6) above, wherein the predetermined film is a ruthenium film.

(8) A raw material gas supply method for supplying a raw material gas into a processing container of a film forming apparatus that forms a predetermined film on a substrate.
A step of adjusting the opening degree of a pressure adjusting valve provided in a supply pipe connecting the raw material tank and the processing container based on the pressure in the raw material tank for storing the liquid raw material or the solid raw material.
A step of vaporizing the liquid raw material or the solid raw material in the raw material tank to generate the raw material gas, and
A method for supplying a raw material gas, comprising a step of supplying the generated raw material gas to the processing container via the supply pipe.

1, 1a, 1b Film deposition equipment 10 Processing container 51 Raw material tank 52 Supply pipe 54 APC valve 80 Pressure sensor 110 Control unit W wafer

Claims

A film forming apparatus for forming a predetermined film on a substrate,
A processing container that is configured to be depressurizable and that stores the substrate,
A raw material tank for storing a liquid raw material or a solid raw material,
A supply pipe connecting the raw material tank and the processing container, so that the raw material gas generated by vaporizing the liquid raw material or the solid raw material in the raw material tank is supplied to the processing container,
A pressure adjusting valve provided in the supply pipe and having a variable opening degree;
A pressure sensor for measuring the pressure in the raw material tank,
A film forming apparatus including a control unit that controls the pressure adjusting valve based on the measurement result of the pressure sensor.
The film forming apparatus according to claim 1, wherein the control unit controls the pressure adjusting valve so that the pressure in the raw material tank becomes higher than the pressure in the processing container during film formation.
A temperature sensor for measuring the temperature of the raw material tank,
It has a heating unit that heats the raw material tank,
The result according to claim 1 or 2, wherein the control unit further controls the heating unit so that the temperature of the raw material tank becomes higher than the temperature of the supply pipe based on the measurement result of the temperature sensor. Membrane device.
The film forming apparatus according to claim 3, wherein the temperature sensor uses platinum.
The film forming apparatus according to any one of claims 1 to 4, wherein the raw material tank has a buffer chamber for accumulating the raw material gas downstream of the raw material chamber for accommodating the liquid raw material or the solid raw material.
The film forming apparatus according to any one of claims 1 to 5, further comprising a carrier gas supply mechanism for supplying carrier gas to the raw material tank.
The film forming apparatus according to any one of claims 1 to 6, wherein the predetermined film is a ruthenium film.
A raw material gas supply method for supplying a raw material gas into a processing container of a film forming apparatus that forms a predetermined film on a substrate.
Based on the pressure in the raw material tank that stores the liquid raw material or the solid raw material, a step of adjusting the opening degree of the pressure adjusting valve provided in the supply pipe connecting the raw material tank and the processing container,
A step of vaporizing the liquid raw material or the solid raw material in the raw material tank to generate the raw material gas, and
A method for supplying a raw material gas, comprising a step of supplying the generated raw material gas to the processing container via the supply pipe.