WO2020177558A1 - 释放孔位于封装空间外的mems器件的封装 - Google Patents

释放孔位于封装空间外的mems器件的封装 Download PDF

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WO2020177558A1
WO2020177558A1 PCT/CN2020/076211 CN2020076211W WO2020177558A1 WO 2020177558 A1 WO2020177558 A1 WO 2020177558A1 CN 2020076211 W CN2020076211 W CN 2020076211W WO 2020177558 A1 WO2020177558 A1 WO 2020177558A1
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packaging
release hole
packaging film
mems device
silicon
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French (fr)
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张孟伦
庞慰
杨清瑞
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
    • H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
    • H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/462—Microelectro-mechanical filters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H2009/02283—Vibrating means

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, in particular to a MEMS device assembly, an electronic device having the MEMS device assembly, an electronic device having the MEMS device assembly or the electronic device, and a MEMS device package method.
  • Small, high-performance film bulk acoustic wave (FBAR, film bulk acoustic resonator) bandpass filters are widely used in mobile wireless communication systems.
  • the thin-film bulk acoustic wave bandpass filter is based on a high-Q resonator.
  • the thin-film bulk acoustic wave resonator uses the thickness extension mode of a piezoelectric aluminum nitride (AlN) film.
  • the thin film bulk acoustic wave resonator mainly has the following three structures:
  • Silicon reverse etching type This bulk silicon micro-manufacturing process is used to etch and remove most of the silicon material from the reverse side of the silicon wafer to form an air interface on the lower surface of the piezoelectric oscillatory stack, thereby confining sound waves within the piezoelectric oscillatory stack. Because the large area of silicon substrate is removed, it will inevitably affect the mechanical fastness of the device and greatly reduce the yield.
  • Air gap type The surface micro-manufacturing process used forms an air gap on the upper surface of the silicon wafer to limit the sound waves in the piezoelectric oscillator stack.
  • the air gap may be a sinking type formed by removing part of the surface of the silicon wafer, or it may be an upward convex shape formed directly on the silicon surface without removing the silicon.
  • This type of FBAR can not only confine the sound wave within the piezoelectric oscillator stack, and obtain a high Q value.
  • the surface micro-manufacturing process it is not necessary to remove most of the silicon substrate, so it is compatible with the silicon wafer.
  • the mechanical fastness is much better; in addition, there is no need to process the reverse side of the silicon substrate so that this method can be compatible with the traditional silicon integrated circuit process and has the possibility of integration.
  • SMR Solidly mounted resonator
  • the Bragg reflector generally uses W and SiO 2 as the high and low impedance acoustic layer, because the acoustic impedance between W and SiO 2 is relatively different.
  • W and SiO 2 are materials in the standard CMOS process. Its biggest advantage is that it has strong mechanical fastness, good integration, and does not need to use technology, which makes it easy for many semiconductor factories that do not have technology to join in.
  • Figures 1 and 2 are respectively a top view of a typical air gap type FBAR and a cross-sectional view taken along A-A in the top view.
  • 10 is the air gap structure of the resonator
  • 11 is the release hole of the air gap
  • 12 is the bottom electrode of the resonator
  • 13 is the piezoelectric layer of the resonator
  • 14 is the top electrode of the resonator.
  • film bulk acoustic resonators have specific packaging requirements under different application environments.
  • certain BAW resonators can work optimally in specific environmental conditions, such as a specific range of humidity or pressure or in an inert gas.
  • certain bulk acoustic wave resonators may be sensitive to certain pollution.
  • 3A-3E show the thin film packaging process of the resonator in the prior art. as the picture shows:
  • the known thin film packaging process is as follows:
  • a packaging film 31 is formed above the sacrificial layer, as shown in FIG. 3C;
  • a sealing layer 35 is formed on the packaging film 31 to seal the openings in the packaging film 31, thereby sealing the packaging cavity 33, as shown in FIG. 3E.
  • the position of the opening 32 is located in the middle of the film 31, so that the liquid medicine enters the packaging.
  • the distance into the air gap 10 through the release hole 11 becomes longer, as shown by the arrow in FIG. 3D. Therefore, chemical residues and the like generated during the release of the sacrificial layer 30 are likely to stay in the air gap 10, resulting in deterioration of the performance of the resonator.
  • the air gap type FBAR there will be a step 34 in the packaging film 34 formed on the release hole 11 of the air gap.
  • the stability of the packaging structure will deteriorate. Moreover, when the final sealing is performed, the sealant will easily fall from the opening 32 to the top of the device, which will cause the performance of the resonator to deteriorate.
  • a cover substrate is installed above the device.
  • An example cover substrate is a dome or cap-shaped "cap” that can be positioned above each device and then fixed to a supporting substrate. After being unitized, the devices can be packaged one by one at the chip level, for example, packaged in a housing.
  • this packaging method increases the overall size of the device, and increases the packaging cost due to a large number of packaging steps. At the same time, it is easy to introduce particle contamination in the chip-scale packaging.
  • Another packaging method such as thin-film packaging, first deposits a sacrificial layer on the device during processing, then spin-coats a thin film as the packaging layer, and etches the holes to reach the sacrificial layer, and releases the sacrificial layer to form a cavity. Spin on a thin film to seal it.
  • This packaging method has simple process, good sealing, low cost, and is compatible with IC process.
  • a MEMS device assembly including:
  • MEMS devices including air gap structures
  • the packaging film forms a packaging space that closes the MEMS device
  • the MEMS device is provided with a first release hole communicating with the air gap structure
  • the first release hole is located outside the packaging space.
  • the packaging film is provided with a second release hole, and the second release hole is filled with a sealing material.
  • the packaging film covers and seals the first release hole.
  • the packaging film is provided with a plurality of second release holes.
  • the MEMS device includes a bulk acoustic wave resonator. Further, the MEMS device includes a thin film bulk acoustic resonator.
  • the bulk acoustic wave resonator includes a bottom electrode, a piezoelectric layer and a top electrode
  • the packaging film covers the bulk acoustic wave resonator
  • the component includes a sealing layer at least partially covering the packaging film
  • the material constituting the sealing layer constitutes the sealing material filling the second release hole; and the material of the sealing layer is the same as the material of the top electrode, and the material of the packaging film is the same as the material of the piezoelectric layer.
  • the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymer, spin-on glass, plastic, resin, dielectric material, metal, silicon nitride, aluminum nitride and other materials;
  • the material of the film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotube, TOK DFR material, etc.
  • an electronic device which includes a plurality of the aforementioned MEMS device components.
  • At least two MEMS device components have a common first release hole.
  • At least two MEMS devices are packaged in one packaging space formed by a layer of packaging film.
  • the electronic device includes a filter.
  • an electronic device which includes the above-mentioned electronic device or the above-mentioned MEMS device assembly.
  • a method for packaging a MEMS device includes an air gap structure and is provided with a first release hole communicating with the air gap structure.
  • the method includes step:
  • At least one second release hole communicating with the packaging space is opened on the packaging film
  • Figure 1 is a schematic top view of a thin film bulk acoustic resonator in the prior art
  • Fig. 2 is a cross-sectional view taken along the line A-B of the resonator in Fig. 1;
  • 3A-3E are the processes of film packaging of the film bulk acoustic resonator in the prior art
  • Fig. 4A is a schematic top view of a film bulk acoustic resonator according to an exemplary embodiment of the present invention
  • Fig. 4B is a schematic cross-sectional view along A-A in Fig. 4A;
  • Fig. 5A is a schematic top view of a filter according to an exemplary embodiment of the present invention.
  • Figure 5B is a schematic cross-sectional view taken along A-A in Figure 5A;
  • Figures 6A-6F schematically show a thin-film packaging process of a thin-film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • a thin-film bulk acoustic wave resonator is taken as an example to exemplarily describe the MEMS device assembly according to the embodiment of the invention.
  • FIG. 4A is a schematic top view of a thin film bulk acoustic resonator according to an exemplary embodiment of the present invention.
  • Fig. 4B is a schematic cross-sectional view along A-A in Fig. 4A.
  • 10 is the bottom cavity of the FBAR (corresponding to the air gap structure), and 11 is the release hole of the bottom cavity 10 (corresponding to the first release hole, and the typical value of its size can be: 10um); 12 is the bottom electrode of the FBAR, 13 is the piezoelectric layer of the FBAR, and 14 is the top electrode of the FBAR; 20 is the packaging film, and 21 is the opening on the packaging film (corresponding to the second release hole).
  • the release hole 11 of the cavity 10 at the bottom of the FBAR is outside the cavity formed by the packaging film 20.
  • 10 is the cavity at the bottom of the FBAR
  • 11 is the release hole of the cavity 10 at the bottom of the FBAR
  • 12 is the bottom electrode of the FBAR.
  • 23 is a flat layer located on both sides of the bottom electrode 12, the added flat layer is aligned with the oblique end faces at both ends of the bottom electrode 12, thereby forming a flat and smooth surface, which is beneficial to deposit on the connection between the bottom electrode 12 and the flat layer 23 Piezo film with good C-axis orientation.
  • the flat layer can be made of suitable dielectric materials such as silicon dioxide, silicon nitride, silicon carbide, etc. It is not necessary to provide a flat layer.
  • 13 is the piezoelectric layer of FBAR
  • 14 is the top electrode of FBAR
  • 20 is the packaging film
  • 21 is the opening on the packaging film
  • 22 is the sealing layer.
  • the release hole 11 of the cavity 10 at the bottom of the FBAR is outside the packaging space 24 formed by the packaging film 20.
  • the release hole 11 Since the release hole 11 is outside the packaging space 24, the release hole is sealed during the process of forming the packaging film 20, so in the process of releasing the packaging space 24, there will be no liquid medicine residues, particles, etc. entering the FBAR In the bottom cavity 10, the performance of the resonator will not be affected. Moreover, the position and number of the openings 21 on the packaging film 20 can be flexibly selected. At the position of the opening, the process steps for aligning with the bottom cavity release hole 11 can be omitted, and the packaging cost can be reduced; at the same time, the number of openings can be increased, and the formation of the cavity 24 can be accelerated. In addition, for the FBAR of the same area, encapsulating the release hole 11 outside the cavity 24 can reduce the area of the cavity 24 on the top of the resonator, thereby reducing the package size of the resonator.
  • Fig. 5A is a schematic top view of a filter according to an exemplary embodiment of the present invention
  • Fig. 5B is a schematic cross-sectional view along line A-A in Fig. 5A.
  • the filter is composed of an air gap type FBAR according to a ladder structure, that is, each stage is composed of a series resonator and a parallel resonator.
  • 30, 31, 32 are series resonators, 33 and 34 are parallel resonators; 11 is the release hole of the cavity at the bottom of the resonator, 20 is the packaging film, and 21 is the opening on the packaging film 20.
  • 10 is the bottom cavity of FBAR
  • 11 is the release hole of the bottom cavity of FBAR
  • 12 is the bottom electrode of FBAR
  • 23 is the flat layer
  • 13 is the piezoelectric layer of FBAR
  • 14 is the top electrode of FBAR
  • 21 is the opening of the packaging film
  • 24 is the cavity on the top of the FBAR
  • 22 is the sealing layer.
  • the release hole 11 of the cavity at the bottom of the resonator is outside the cavity 24 at the top of the resonator.
  • the release hole 11 of the cavity at the bottom of the resonator is outside the packaging space formed by the packaging film 20, the release hole 11 is sealed by the packaging film during the process of forming the packaging film 20, so in the process of releasing the packaging space 24 No chemical residues, particles, etc. enter the bottom cavity 10 of the FBAR, so the performance of the resonator will not be affected, and a high-performance filter can be obtained after packaging.
  • FIGS 6A-6F schematically illustrate the thin-film packaging process of a thin-film bulk acoustic resonator according to an exemplary embodiment of the present invention, specifically:
  • Figure 6A As shown in Figure 6A, it is a cavity-type thin-film bulk acoustic resonator with good performance. It includes: 10 bottom cavity structure, 11 bottom cavity release hole; 12 bottom electrode, 23 is the flat layer on both sides of the bottom electrode, 13 piezoelectric layer, 14 top electrode;
  • the material of the sacrificial layer can be organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metals (such as germanium, titanium, copper), metal oxides (magnesium oxide, zinc oxide), photoresist and other materials .
  • the packaging film 20 is formed on the sacrificial layer and passed through light The process of etching and etching forms a sacrificial layer with openings 21 reaching the bottom on the packaging film 20, as shown in FIG. 6D.
  • the thickness of the packaging film can be 1-10um, typically 3um.
  • the packaging film material can be silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist (such as SU-8), polymer, graphene, nanotube, TOK and DFR materials, etc.
  • the sealing layer material can be dense materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and other materials.
  • thin-film packaging can also be applied to other MEMS devices containing air gap structures.
  • a MEMS device assembly including:
  • MEMS device including an air gap structure (corresponding to cavity 10);
  • the packaging film 20 forms a packaging space 24 enclosing the MEMS device
  • the MEMS device is provided with a first release hole (corresponding to the release hole 11) communicating with the air gap structure;
  • the first release hole is located outside the packaging space.
  • the packaging film is provided with a second release hole (corresponding to the opening 21), and the second release hole is filled with a sealing material.
  • packaging film covers and seals the first release hole.
  • the embodiment of the present invention also proposes an electronic device including a plurality of the above-mentioned MEMS device components.
  • at least two MEMS device components have a common first release hole.
  • at least two MEMS devices are packaged in one package space formed by a layer of package film.
  • the present invention also provides a packaging method for a MEMS device.
  • the resonator includes an air gap structure and is provided with a first release hole communicating with the air gap structure.
  • the method includes the steps:
  • At least one second release hole communicating with the packaging space is opened on the packaging film
  • the electrode constituent materials can be gold (Au), tungsten (W), molybdenum (Mo), platinum (Pt), ruthenium (Ru), iridium (Ir), titanium tungsten (TiW), aluminum (Al) , Titanium (Ti) and other similar metals.
  • the piezoelectric layer material can be aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3 ), quartz (Quartz), potassium niobate (KNbO 3 ) or tantalic acid Materials such as lithium (LiTaO 3 ).
  • the material of the sacrificial layer can be organic material, polymer, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, Ti, Cu), metal oxide (such as MgO, ZnO), photoresist (such as SU- 8) and other easily soluble materials.
  • the packaging film material can be silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotubes and other materials;
  • the sealing layer material can be dense materials such as silicon dioxide, polymers, spin-on glass, plastics, resins, dielectric materials, metals, silicon nitride, aluminum nitride, and other materials.
  • the material of the sealing layer is the same as the material of the top electrode, and the material of the packaging film is the same as the material of the piezoelectric layer. More specifically, the material of the sealing layer is selected from one of the following materials: silicon dioxide, polymer, spin-on glass, plastic, resin, dielectric material, metal, silicon nitride, aluminum nitride and other materials; The material of the packaging film is selected from one of the following materials: silicon, silicon dioxide, silicon nitride, aluminum nitride, aluminum oxide, metal, photoresist, polymer, graphene, nanotubes, TOK DFR materials, etc.
  • the sacrificial layer forming the air gap structure and the sacrificial layer forming the packaging space can use the same material, which is selected from one of the following materials: organic materials, polymers, silicon, amorphous silicon, silicon dioxide, PSG, metal (such as Ge, Ti, Cu), metal oxides (such as MgO, ZnO), photoresist (such as SU-8) and other easily soluble materials.
  • the embodiment of the present invention also relates to an electronic device, including the above-mentioned MEMS device assembly or the above-mentioned electronic device.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

一种MEMS器件组件，包括：MEMS器件，包括空气隙结构；和封装薄膜(20)，形成封闭所述MEMS器件的封装空间(24)，其中：所述MEMS器件设置有与所述空气隙结构相通的第一释放孔(11)；且所述第一释放孔(11)位于所述封装空间(24)的外侧。

Description

释放孔位于封装空间外的MEMS器件的封装 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种MEMS器件组件、一种具有该MEMS器件组件的电子器件，一种具有该MEMS器件组件或者该电子器件的电子设备，以及一种MEMS器件的封装方法。
背景技术
小型化、高性能的薄膜体声波(FBAR，film bulk acoustic resonator)带通滤波器在移动无线通讯系统中广泛应用。薄膜体声波带通滤波器是基于高Q值的谐振器，该薄膜体声波谐振器是利用压电氮化铝(AlN)薄膜的厚度延伸模式。
薄膜体声波谐振器主要有以下三种结构：
(1)硅反面刻蚀型。此种采用的体硅微制造工艺，从硅片反面刻蚀去除大部分的硅材料,以在压电振荡堆的下表面形成空气交界面,从而将声波限制于压电振荡堆之内。由于大面积的硅衬底被去除,势必影响了器件的机械牢度,并大幅降低成品率。
(2)空气隙型。此种采用的表面微制造工艺，在硅片的上表面形成一个空气隙以限制声波在压电振荡堆之内。空气隙可以采用去除部分硅片表面形成的下沉型，也可以是不去除硅直接在硅表面之上形成的上凸形。这一类FBAR不但能很好地将声波限制于压电振荡堆之内,获得很高的Q值,同时因为采用了表面微制造工艺,不需去除大部分硅衬底,故其与硅片反面刻蚀型相比机械牢度要好很多；此外，不需要对硅衬底的反面进行加工使得这一方法可以与传统的硅集成电路工艺相兼容,有集成的可能性。
(3)固态装配型(SMR，solidly mounted resonator)。与前两者不同，SMR采用布拉格反射层将声波限制在压电振荡堆之内,布拉格反射层一般采用W和SiO 2作高低阻抗的声学层,因为W和SiO 2之间的声学阻抗相差较大,且这两种材料都是标准CMOS工艺之中的材料。它的最大优点是机械牢度强、集成性好,且不需要借助工艺,这使得许多不具备工艺的半导 体厂商业也可以方便地加入进来。但其缺点是需要制备多层薄膜,工艺成本比空气隙型的要高,且布拉格反射层的声波反射效果终不及空气来得好,故SMR的Q值一般比空气隙型的FBAR要低一些。
图1、图2分别为典型的空气隙型FBAR的俯视图和沿俯视图中A-A相切的截面图。其中10为谐振器的空气隙结构，11为空气隙的释放孔，12为谐振器的底电极，13为谐振器的压电层，14为谐振器的顶电极。
通常，薄膜体声波谐振器在不同的应用环境下，具有特定的封装要求。例如，某些体声波谐振器可以在特定环境状态中最优地工作，如特定范围的湿度或压力或在惰性气体中。此外，特定的体声波谐振器可能对特定污染敏感。
图3A-3E示出了现有技术中谐振器的薄膜封装流程。如图所示：
已知的薄膜封装流程如下：
1)：如图3A所示为性能良好的空气隙型薄膜体声波谐振器；
2)：在谐振器上方沉积牺牲层30，如图3B所示；
3)：在牺牲层上方形成封装薄膜31，如图3C所示；
4)：在封装薄膜上31形成开孔32并将牺牲层30释放掉，形成封装空腔33，如图3D所示；
5)：在封装薄膜31上形成密封层35，将封装薄膜31中开孔密封，从而将封装空腔33密封住，如图3E所示。
但是对于空气隙型薄膜体声波谐振器，其在封装的过程中，当释放牺牲层30形成封装空腔33的过程中，由于开孔32的位置位于薄膜31的中间部位，使得药液进入封装空腔33之后，在通过释放孔11进入空气隙10的距离变长，如图3D中的箭头所示。因而牺牲层30在释放过程中产生的药液残渣等很容易滞留在空气隙10中，导致谐振器的性能变差。同时对于空气隙型FBAR，在空气隙的释放孔11之上形成的封装薄膜34中会存在台阶34，由于台阶处的应力集中较大，会导致封装结构的稳定性变差。而且，在最终进行密封时，密封剂会很容易从开孔32处掉落到器件上方，进而导致谐振器的性能变差。
已有的封装方法中，如键合封装，即在器件上方安装覆盖衬底。一个范例覆盖衬底是圆顶或帽盖形“帽盖”，可以将其定位于每一个器件上方， 然后固定到支撑衬底。在被单元化之后，可以在芯片级，将器件逐个封装，例如封装于壳体中。不过此种封装方法会增加器件的总尺寸，而且由于有大量的封装步骤增加了封装成本，同时在芯片级封装中容易引入颗粒污染。另一种封装方法，如薄膜封装，加工时首先在器件上方沉积一层牺牲层，然后旋涂一层薄膜作为封装层，并刻蚀形成孔道直达牺牲层，将牺牲层释放形成空腔后再旋涂一层薄膜将其密封。此种封装方法，工艺简单，密封良好，成本较低，且与IC工艺兼容。
但是，当使用薄膜封装的方法封装空气隙FBAR时，在释放封装空腔时，容易将药液残渣等引入到器件底部的空气隙中，对器件的性能造成影响，使其Q值降低等。
发明内容
为缓解或解决现有技术中的上述问题，提出本发明。
根据本发明的实施例的一个方面，提出了一种MEMS器件组件，包括：
MEMS器件，包括空气隙结构；和
封装薄膜，形成封闭所述MEMS器件的封装空间，
其中：
所述MEMS器件设置有与所述空气隙结构相通的第一释放孔；且
所述第一释放孔位于所述封装空间的外侧。
可选的，所述封装薄膜设置有第二释放孔，第二释放孔中填充有密封材料。
可选的，所述封装薄膜覆盖并密封所述第一释放孔。
可选的，所述封装薄膜设置有多个第二释放孔。
可选的，所述MEMS器件包括体声波谐振器。进一步的，所述MEMS器件包括薄膜体声波谐振器。
在可选的实施例中，所述体声波谐振器包括底电极、压电层和顶电极，所述封装薄膜覆盖体声波谐振器，所述组件包括至少部分覆盖所述封装薄膜的密封层，组成所述密封层的材料构成填充所述第二释放孔的密封材料；且密封层的材料与顶电极的材料相同，且封装薄膜的材料与压电层的材料相同。进一步的，所述密封层的材料选自如下材料之一：二氧化硅、聚合 物、旋涂玻璃、塑料、树脂、介电材料、金属、氮化硅、氮化铝等材料；所述封装薄膜的材料选自如下材料之一：硅、二氧化硅、氮化硅、氮化铝、氧化铝、金属、光刻胶、高分子聚合物、石墨烯、纳米管、TOK DFR材料等。
根据本发明的实施例的另一方面，提出了一种电子器件，包括多个上述的MEMS器件组件。
可选的，至少两个MEMS器件组件具有共用的第一释放孔。
可选的，由一层封装薄膜形成的一个封装空间内封装有至少两个MEMS器件。
可选的，所述电子器件包括滤波器。
根据本发明的实施例的再一方面，提出了一种电子设备，包括上述的电子器件或者上述的MEMS器件组件。
根据本发明的实施例的还一方面，提出了一种MEMS器件的封装方法，所述MEMS器件包括空气隙结构，且设置有与所述空气隙结构相通的第一释放孔，所述方法包括步骤：
利用封装薄膜形成封闭所述MEMS器件的封装空间，且使得所述第一释放孔位于所述封装空间外侧；
在所述封装薄膜上开设与所述封装空间连通的至少一个第二释放孔；和
密封所述第二释放孔。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1为现有技术的薄膜体声波谐振器的俯视示意图；
图2为图1中的谐振器的A-B向剖视图；
图3A-3E为现有技术中薄膜体声波谐振器的薄膜封装的流程；
图4A为根据本发明的一个示例性实施例的薄膜体声波谐振器的俯视 示意图；
图4B为沿图4A中的A-A的剖面示意图；
图5A为根据本发明的一个示例性实施例的滤波器的示意性俯视图；
图5B为沿图5A中的A-A的剖面示意图；
图6A-6F示意性示出根据本发明的一个示例性实施例的薄膜体声波谐振器的薄膜封装流程。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。在说明书中，相同或相似的附图标号指示相同或相似的部件。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
下面参照附图，以薄膜体声波谐振器的薄膜封装为例，示例性描述根据本发明的实施例的MEMS器件组件。
图4A为根据本发明的一个示例性实施例的薄膜体声波谐振器的俯视示意图；
图4B为沿图4A中的A-A的剖面示意图。
图4A所示的实施例中，10为FBAR的底部空腔(对应于空气隙结构)，11为底部空腔10的释放孔(对应于第一释放孔，其尺寸大小典型的数值可以为：10um)；12为FBAR的底电极，13为FBAR的压电层，14为FBAR的顶电极；20为封装薄膜，21为封装薄膜上的开孔(对应于第二释放孔)。明显的，FBAR底部空腔10的释放孔11在封装薄膜20所形成空腔的外侧。
图4B中，10为FBAR底部的空腔，11为FBAR底部空腔10的释放孔；12为FBAR的底电极。23为平坦层位于底电极12的两侧，加入的平坦层与底电极12两端的斜端面对齐，从而形成平整光滑的表面，这样有利于在底电极12与平坦层23的连接处上沉积有良好C-轴取向的压电薄膜。平坦层可以采用二氧化硅、氮化硅、碳化硅等合适的介质材料。也可以不设置平坦层。13为FBAR的压电层，14为FBAR的顶电极；20为封装薄膜，21为封装薄膜上的开孔，22为密封层。在本发明中，FBAR底部空腔10 的释放孔11在封装薄膜20所形成封装空间24的外侧。
由于释放孔11在封装空间24之外，在形成封装薄膜20的过程中，释放孔便被密封住，所以在释放形成封装空间24的过程中，不会有药液残渣、颗粒等进入FBAR的底部空腔10中，因此谐振器的性能不会受到影响。而且，封装薄膜20上开孔21的位置和数量可灵活选择。在开孔位置上，能够省却与底部空腔释放孔11的对准工艺步骤，降低封装成本；同时可以增加开孔的数量，能够加快空腔24的形成。另外，对于相同面积的FBAR来说，将释放孔11封装在空腔24之外，能够减小谐振器顶部空腔24的面积，进而使得谐振器的封装尺寸得到减小。
图5A为根据本发明的一个示例性实施例的滤波器的示意性俯视图；图5B为沿图5A中的A-A的剖面示意图。
图5A所示的实施例中，滤波器是由空气隙型FBAR按照梯形结构即每一级由一个串联谐振器和一个并联谐振器组成。其中，30、31、32为串联谐振器，33和34为并联谐振器；11为谐振器底部空腔的释放孔，20为封装薄膜，21为封装薄膜20上的开孔。
图5B中，10为FBAR的底部空腔，11为FBAR底部空腔的释放孔；12为FBAR的底电极，23为平坦层，13为FBAR的压电层，14为FBAR顶电极；20为封装薄膜，21为封装薄膜的开孔，24为FBAR顶部的空腔，22为密封层。图5B中，谐振器底部空腔的释放孔11在谐振器顶部空腔24以外。
由于谐振器底部空腔的释放孔11在封装薄膜20形成的封装空间之外，因此在形成封装薄膜20的过程中释放孔11便被封装薄膜密封住，所以在释放形成封装空间24的过程中，不会有药液残渣、颗粒等进入FBAR的底部空腔10中，因此谐振器的性能不会受到影响，封装后可以获得高性能的滤波器。
图6A-6F示意性示出根据本发明的一个示例性实施例的薄膜体声波谐振器的薄膜封装流程，具体的：
1)：如图6A所示为性能良好的空腔型薄膜体声波谐振器。其包括：10底部空腔结构，11底部空腔的释放孔；12底电极，23为底电极两侧的 平坦层，13压电层，14顶电极；
2)：通过等离子体增强化学气相沉积(PECVD)、物理气相沉(PVD)、化学气相沉积法(CVD)、旋涂等类似的薄膜沉积工艺，在谐振器的顶部沉积一层牺牲层41，其厚度可以为0.1-10um，如图6B所示。牺牲层的材料可以为有机材料、聚合物、硅、非晶硅、二氧化硅、PSG、金属(如锗、钛、铜)、金属氧化物(氧化镁、氧化锌)、光刻胶等材料。
3)：通过光刻的工艺，在牺牲层表面形成刻蚀阻挡层，然后在通过干法刻蚀或者湿法刻蚀的工艺，将牺牲层上多余的材料刻蚀掉，最后去除光刻胶后，在牺牲层上方形成所需的图形，如图6C所示。
4)：在通过等离子体增强化学气相沉积(PECVD)、物理气相(PVD)、化学气相沉积法(CVD)、旋涂等类似的薄膜沉积工艺，在牺牲层上形成封装薄膜20，并通过光刻和刻蚀的工艺在封装薄膜20上形成开孔21直达底部的牺牲层，如图6D所示。封装薄膜的厚度可以为1-10um，典型的可以为3um。封装薄膜材料可以为硅、二氧化硅、氮化硅、氮化铝、氧化铝、金属、光刻胶(如SU-8)、高分子聚合物、石墨烯、纳米管、TOK DFR材料等。
5)：从封装薄膜20上的开孔21引入刻蚀剂，将封装薄膜20下的牺牲层去除，并在谐振器的顶部形成空腔结构24，如图6E所示。
6)：最后用密封剂将封装薄膜20上的开孔21密封住，从而在谐振器的顶部形成一个密闭的封装空间，如图6F所示。密封层材料可以为二氧化硅等致密性的材料、聚合物、旋涂玻璃、塑料、树脂、介电材料、金属、氮化硅、氮化铝等材料。
如本领域技术人员能够理解的，虽然上述实施例以薄膜体声波谐振器为例说明了薄膜封装，但是，薄膜封装也可以适用于其他的含有空气隙结构的MEMS器件。
基于以上，本发明提出了一种MEMS器件组件，包括：
MEMS器件，包括空气隙结构(对应于空腔10)；和
封装薄膜20，形成封闭所述MEMS器件的封装空间24，
其中：
所述MEMS器件设置有与所述空气隙结构相通的第一释放孔(对应于释放孔11)；且
所述第一释放孔位于所述封装空间的外侧。
进一步的，所述封装薄膜设置有第二释放孔(对应于开孔21)，第二释放孔中填充有密封材料。
进一步的，所述封装薄膜覆盖并密封所述第一释放孔。
基于以上，本发明的实施例也提出了一种电子器件，包括多个上述的MEMS器件组件。可选的，至少两个MEMS器件组件具有共用的第一释放孔。进一步的，由一层封装薄膜形成的一个封装空间内封装有至少两个MEMS器件。
基于以上，本发明还提出了一种MEMS器件的封装方法，所述谐振器包括空气隙结构，且设置有与所述空气隙结构相通的第一释放孔，所述方法包括步骤：
利用封装薄膜形成封闭所述MEMS器件的封装空间，且使得所述第一释放孔位于所述封装空间外侧；
在所述封装薄膜上开设与所述封装空间连通的至少一个第二释放孔；和
密封所述第二释放孔。
在本发明中，电极组成材料可以是金(Au)、钨(W)、钼(Mo)、铂(Pt)，钌(Ru)、铱(Ir)、钛钨(TiW)、铝(Al)、钛(Ti)等类似金属形成。
压电层材料可以为氮化铝(AlN)、氧化锌(ZnO)、锆钛酸铅(PZT)、铌酸锂(LiNbO 3)、石英(Quartz)、铌酸钾(KNbO 3)或钽酸锂(LiTaO 3)等材料。
牺牲层材料可以为有机材料、聚合物、硅、非晶硅、二氧化硅、PSG、金属(如Ge、Ti、Cu)、金属氧化物(如MgO、ZnO)、光刻胶(如SU-8)等易溶性的材料。
封装薄膜材料可以为硅、二氧化硅、氮化硅、氮化铝、氧化铝、金属、光刻胶、高分子聚合物、石墨烯、纳米管等材料；
密封层材料可以为二氧化硅等致密性的材料、聚合物、旋涂玻璃、塑料、树脂、介电材料、金属、氮化硅、氮化铝等材料。
在可选的实施例中，密封层的材料与顶电极的材料相同，且封装薄膜 的材料与压电层的材料相同。更具体的，所述密封层的材料选自如下材料之一：二氧化硅、聚合物、旋涂玻璃、塑料、树脂、介电材料、金属、氮化硅、氮化铝等材料；所述封装薄膜的材料选自如下材料之一：硅、二氧化硅、氮化硅、氮化铝、氧化铝、金属、光刻胶、高分子聚合物、石墨烯、纳米管、TOK DFR材料等。此外，形成空气隙结构的牺牲层与形成封装空间的牺牲层可以采用相同材料，该材料选自如下材料之一：有机材料、聚合物、硅、非晶硅、二氧化硅、PSG、金属(如Ge、Ti、Cu)、金属氧化物(如MgO、ZnO)、光刻胶(如SU-8)等易溶性的材料。
虽然没有示出，本发明的实施例也涉及一种电子设备，包括上述的MEMS器件组件或者上述的电子器件。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (17)

  1. 一种MEMS器件组件，包括：
    MEMS器件，包括空气隙结构；和
    封装薄膜，形成封闭所述MEMS器件的封装空间，
    其中：
    所述MEMS器件设置有与所述空气隙结构相通的第一释放孔；且
    所述第一释放孔位于所述封装空间的外侧。
  2. 根据权利要求1所述的组件，其中：
    所述封装薄膜设置有第二释放孔，第二释放孔中填充有密封材料。
  3. 根据权利要求1或2所述的组件，其中：
    所述封装薄膜覆盖并密封所述第一释放孔。
  4. 根据权利要求2所述的组件，其中：
    所述封装薄膜设置有多个第二释放孔。
  5. 根据权利要求1-4中任一项所述的组件，其中：
    所述MEMS器件包括体声波谐振器。
  6. 根据权利要求5所述的组件，其中：
    所述MEMS器件包括薄膜体声波谐振器。
  7. 根据权利要求5或6所述的组件，其中：
    所述体声波谐振器包括底电极、压电层和顶电极，所述封装薄膜覆盖体声波谐振器，所述组件包括至少部分覆盖所述封装薄膜的密封层，组成所述密封层的材料构成填充所述第二释放孔的密封材料；且
    密封层的材料与顶电极的材料相同，且封装薄膜的材料与压电层的材料相同。
  8. 根据权利要求7所述的组件，其中：
    所述密封层的材料选自如下材料之一：二氧化硅、聚合物、旋涂玻璃、塑料、树脂、介电材料、金属、氮化硅、氮化铝；
    所述封装薄膜的材料选自如下材料之一：硅、二氧化硅、氮化硅、氮化铝、氧化铝、金属、光刻胶、高分子聚合物、石墨烯、纳米管、TOK DFR材料。
  9. 一种电子器件，包括多个根据权利要求1-8中任一项所述的MEMS 器件组件。
  10. 根据权利要求9所述的电子器件，其中：
    至少两个MEMS器件组件具有共用的第一释放孔。
  11. 根据权利要求9所述的电子器件，其中：
    由一层封装薄膜形成的一个封装空间内封装有至少两个MEMS器件。
  12. 根据权利要求9-11中任一项所述的电子器件，其中：
    所述电子器件包括滤波器。
  13. 一种电子设备，包括根据权利要求9-12中任一项所述的电子器件或者根据权利要求1-8中任一项所述的MEMS器件组件。
  14. 一种MEMS器件的封装方法，所述MEMS器件包括空气隙结构，且设置有与所述空气隙结构相通的第一释放孔，所述方法包括步骤：
    利用封装薄膜形成封闭所述MEMS器件的封装空间，且使得所述第一释放孔位于所述封装空间外侧；
    在所述封装薄膜上开设与所述封装空间连通的至少一个第二释放孔；和
    密封所述第二释放孔。
  15. 根据权利要求14所述的方法，还包括步骤：
    利用所述封装薄膜覆盖并且封住所述第一释放孔。
  16. 根据权利要求14所述的方法，其中：
    所述空气隙结构通过释放第一牺牲层形成，所述封装空间通过释放第二牺牲层形成；且
    第一牺牲层与第二牺牲层的材料相同，且选自如下材料之一：有机材料、聚合物、硅、非晶硅、二氧化硅、PSG、金属、金属氧化物、光刻胶。
  17. 根据权利要求16所述的方法，其中：
    所述MEMS器件为体声波谐振器，所述体声波谐振器包括底电极、压电层和顶电极，所述封装薄膜覆盖体声波谐振器，所述组件包括至少部分覆盖所述封装薄膜的密封层，组成所述密封层的材料构成填充所述第二释放孔的密封材料；且
    密封层的材料与顶电极的材料相同，且选自如下材料之一：二氧化硅、聚合物、旋涂玻璃、塑料、树脂、介电材料、金属、氮化硅、氮化铝等材 料；且
    封装薄膜的材料与压电层的材料相同，且选自如下材料之一：有机材料、聚合物、硅、非晶硅、二氧化硅、PSG、金属、金属氧化物、光刻胶。
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