WO2020172953A1 - Oled显示装置及其制作方法 - Google Patents

Oled显示装置及其制作方法 Download PDF

Info

Publication number
WO2020172953A1
WO2020172953A1 PCT/CN2019/081663 CN2019081663W WO2020172953A1 WO 2020172953 A1 WO2020172953 A1 WO 2020172953A1 CN 2019081663 W CN2019081663 W CN 2019081663W WO 2020172953 A1 WO2020172953 A1 WO 2020172953A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
insulating layer
oled display
metal layer
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/081663
Other languages
English (en)
French (fr)
Inventor
王雷
鲜于文旭
龚文亮
黄晓雯
陈泽升
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US16/492,162 priority Critical patent/US10879498B2/en
Priority to JP2019540628A priority patent/JP6987141B2/ja
Publication of WO2020172953A1 publication Critical patent/WO2020172953A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the field of display technology, in particular to an OLED display device and a manufacturing method thereof.
  • OLED Organic Light Emitting Display
  • OLED has self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, close to 180° viewing angle, wide operating temperature range, and can realize flexible display and Large-area full-color display and many other advantages are recognized by the industry as the display device with the most potential for development.
  • OLED can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED) are two categories, namely direct addressing and thin film transistor (TFT) matrix addressing.
  • PMOLED Passive Matrix OLED
  • AMOLED Active Matrix OLED
  • TFT thin film transistor
  • AMOLED has pixels arranged in an array, is an active display type, has high luminous efficiency, and is generally used as a high-definition large-size display device.
  • OLED devices usually include: a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light emitting layer provided on the hole transport layer, An electron transport layer on the light-emitting layer, an electron injection layer provided on the electron transport layer, and a cathode provided on the electron injection layer.
  • the light-emitting principle of OLED devices is that semiconductor materials and organic light-emitting materials are driven by an electric field to cause light emission through carrier injection and recombination.
  • OLED devices usually use indium tin oxide (ITO) electrodes and metal electrodes as the anode and cathode of the device, respectively.
  • ITO indium tin oxide
  • Electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer respectively, and meet in the light-emitting layer to form excitons and excite light-emitting molecules, the latter emit visible light through radiation relaxation.
  • a polarizer In order to reduce the reflectivity of the existing OLED display device under strong light, a polarizer (POL) is arranged on the light-emitting side of the OLED display panel. This anti-reflection method will lose light and reduce the life of the OLED display device. The thickness is generally large and the material is brittle, which is not conducive to the development of dynamic bending display panels.
  • POL-less (non-polarizer) technology to reduce reflectivity.
  • a color filter film is used to replace the polarizer.
  • the color filter film includes sub-pixels in the OLED display panel.
  • the thickness of the color filter layer can be less than 5 ⁇ m, which is greatly reduced relative to the thickness of the polarizer (generally 100 ⁇ m), which is beneficial to the bending of the OLED display device
  • the color filter layer can increase the light output rate from 42% to 60% compared to the polarizer, which can extend the service life of the OLED display device.
  • the OLED display device includes an OLED display panel 100, a touch layer 200 disposed on the OLED display panel 100, and a touch layer 200
  • the OLED display panel 100 includes a plurality of sub-pixels 110.
  • the touch layer 200 includes a first insulating layer 210, a first metal layer 220 disposed on the first insulating layer 210, a second insulating layer 230 disposed on the first insulating layer 210 and the first metal layer 220, and The second metal layer 240 on the second insulating layer 230.
  • the second insulating layer 230 is provided with a via 231 located above the first metal layer 220, and the second metal layer 240 is in contact with the first metal layer 220 through the hole 231.
  • the second metal layer 240 has openings 241 located above the plurality of sub-pixels 110.
  • the color filter layer 400 includes a plurality of color resistors 410 respectively located above the plurality of sub-pixels 110 and a black matrix 420 located between the color resistors 410.
  • the purpose of the present invention is to provide an OLED display device which can reduce the light reflectivity and has a lower product cost.
  • Another object of the present invention is to provide a manufacturing method of an OLED display device, the manufactured OLED display device can reduce the light reflectivity, and the product cost is lower.
  • the present invention first provides an OLED display device, which includes an OLED display panel, a first insulating layer provided on the OLED display panel, a first metal layer provided on the first insulating layer, and a first metal layer provided on the first metal Layer and the second insulating layer on the first insulating layer, the second metal layer on the second insulating layer, the black matrix on the second metal layer, the hard mask on the black matrix and the OLED Multiple color resists on the display panel;
  • the OLED display panel includes a plurality of sub-pixels; a plurality of openings penetrate through the second metal layer, a black matrix and a hard mask and are respectively arranged corresponding to a plurality of sub-pixels, and the plurality of color resists are respectively located in the plurality of openings.
  • the multiple color resists are provided on the second insulating layer; or,
  • the second insulating layer is provided with a plurality of first holes respectively located above the plurality of sub-pixels, and the plurality of openings are respectively located above the plurality of first holes; the plurality of color resists are provided on the first insulating layer and are respectively located in the Inside the first hole; or,
  • the second insulating layer and the first insulating layer are provided with a plurality of second holes respectively located above the plurality of sub-pixels, and the plurality of openings are respectively located above the plurality of second holes; the plurality of color resists are provided on the OLED display panel And are respectively located in a plurality of second holes.
  • the OLED display device further includes a protective layer arranged on the hard mask and a plurality of color resists.
  • the material of the hard mask is silicon nitride
  • the first metal layer is transparent, and the structure of the first metal layer is two titanium layers sandwiching an aluminum layer;
  • the second metal layer is transparent, and the structure of the second metal layer is two titanium layers sandwiching an aluminum layer;
  • the material of the first insulating layer and the second insulating layer is silicon nitride
  • the second insulating layer is provided with a via hole located above the first metal layer, and the second metal layer is in contact with the first metal layer through the via hole.
  • the present invention also provides a manufacturing method of an OLED display device, including the following steps:
  • Step S1 providing an OLED display panel
  • the OLED display panel includes a plurality of sub-pixels
  • Step S2 forming a first insulating layer on the OLED display panel, forming a first metal layer on the first insulating layer, and forming a second insulating layer on the first metal layer and the first insulating layer;
  • Step S3 sequentially forming a metal material layer, a black matrix material layer, and a hard mask material layer on the second insulating layer, and patterning the metal material layer, the black matrix material layer, and the hard mask material layer to form a layer from bottom to top A second metal layer, a black matrix, and a hard mask on the second insulating layer; a plurality of openings penetrates the second metal layer, the black matrix, and the hard mask are respectively provided corresponding to a plurality of sub-pixels;
  • Step S4 forming a plurality of color resists in the plurality of openings on the OLED display panel.
  • a plurality of color resists are formed in the plurality of openings on the second insulating layer; or,
  • step S2 after the second insulating layer is formed, first holes respectively located above the plurality of sub-pixels are formed on the second insulating layer; the plurality of openings are respectively located above the plurality of first holes; in the step S4, in the first A plurality of color resists are formed in the plurality of first holes on the insulating layer; or,
  • step S2 after the second insulating layer is formed, second holes respectively located above the plurality of sub-pixels are formed on the second insulating layer and the first insulating layer; the plurality of openings are respectively located above the plurality of second holes; the step S4 In the OLED display panel, a plurality of color resists are formed in the plurality of second holes.
  • the manufacturing method of the OLED display device further includes step S5, forming a protective layer on the hard mask and multiple color resists.
  • the material of the hard mask material layer is silicon nitride
  • the first metal layer is transparent, and the structure of the first metal layer is two titanium layers sandwiching an aluminum layer;
  • the metal material layer is transparent, and the structure of the metal material layer is two titanium layers sandwiching an aluminum layer;
  • the material of the first insulating layer and the second insulating layer is silicon nitride
  • step S2 after forming the second insulating layer, a via hole located above the first metal layer is formed on the second insulating layer, and the second metal layer is in contact with the first metal layer through the via hole.
  • the step S3 specifically includes:
  • Step S31 sequentially forming a metal material layer, a black matrix material layer, a hard mask material layer, and a photoresist layer on the second insulating layer;
  • Step S32 performing an exposure and development process on the photoresist layer to form third holes respectively located above the plurality of sub-pixels;
  • Step S33 Use the photoresist layer as a mask to pattern the metal material layer, the black matrix material layer, and the hard mask material layer to form a second metal layer, black matrix, and hard mask that are sequentially disposed on the second insulating layer ;
  • Step S34 peeling off the photoresist layer.
  • a plurality of color resists are formed in the plurality of openings on the OLED display panel by coating or inkjet printing.
  • the OLED display device of the present invention includes an OLED display panel, a first insulating layer provided on the OLED display panel, a first metal layer provided on the first insulating layer, a first metal layer provided on the A second insulating layer on an insulating layer, a second metal layer arranged on the second insulating layer, a black matrix arranged on the second metal layer, a hard mask arranged on the black matrix, and an OLED display panel
  • the OLED display panel includes a plurality of sub-pixels, a plurality of openings penetrate the second metal layer, a black matrix, and a hard mask respectively corresponding to a plurality of sub-pixels, and the plurality of color resists are respectively located in the plurality of openings Inside, it can effectively eliminate the reflection of the OLED display device under strong light, and the number of photomasks required for the manufacturing process is small, and the product cost is low.
  • the OLED display device manufactured by the manufacturing method of the OLED display device of the present invention can reduce the light reflect
  • FIG. 1 is a schematic diagram of the structure of an existing OLED display device
  • FIG. 2 is a schematic structural diagram of the first embodiment of the OLED display device of the present invention.
  • FIG. 3 is a schematic structural diagram of a second embodiment of the OLED display device of the present invention.
  • FIG. 4 is a schematic structural diagram of a third embodiment of the OLED display device of the present invention.
  • step S1 is a schematic diagram of step S1 of the manufacturing method of the OLED display device of the present invention.
  • step S4 is a schematic diagram of step S4 of the first embodiment of the manufacturing method of the OLED display device of the present invention.
  • step S2 of the second embodiment of the manufacturing method of the OLED display device of the present invention is a schematic diagram of step S2 of the second embodiment of the manufacturing method of the OLED display device of the present invention.
  • step S2 of the third embodiment of the manufacturing method of the OLED display device of the present invention is a schematic diagram of step S2 of the third embodiment of the manufacturing method of the OLED display device of the present invention.
  • the first embodiment of the present invention OLED Display device includes OLED Display panel 10 , Located at OLED Display panel 10 First insulating layer 20 , Located on the first insulating layer 20 The first metal layer 30 , Located on the first metal layer 30 And the first insulating layer 20 Second insulating layer 40 , Located on the second insulating layer 40 Second metal layer 50 , Located on the second metal layer 50 Black matrix 60 , Located in the black matrix 60 Hard mask 70 And located at OLED Display panel 10 Multiple color resists 80 .
  • OLED Display panel 10 With a first insulating layer 20 One side is the light exit side, the first insulating layer 20 , The first metal layer 30 , The second insulating layer 40 And the second metal layer 50 Composition is located OLED Display panel 10 On the touch layer. Said OLED Display panel 10 include multiple sub-pixels 11 . Multiple openings 51 Through the second metal layer 50 Black matrix 60 Hard mask 70 Corresponding to multiple sub-pixels 11 And set, the multiple color resistance 80 In multiple openings 51 Inside.
  • the plurality of sub-pixels 11 Including red sub-pixels, green sub-pixels and blue sub-pixels, the color resistance located above the red sub-pixels 80 Red color resistance, the color resistance above the green sub-pixel 80 Green color resistance, the color resistance above the blue sub-pixel 80 It is blue color resistance.
  • the first insulating layer 20 And the second insulating layer 40 Cover multiple sub-pixels 11 , The multiple color resistance 80 Set on the second insulating layer 40 on.
  • the OLED The display device also includes a hard mask 70 And multiple color resists 80 Protective layer 90 .
  • the hard mask 70 The material is silicon nitride ( SiNx ).
  • the first metal layer 30 Transparent, the first metal layer 30
  • the structure can be two layers of titanium ( Ti ) A layer of aluminum sandwiched ( Al ) Layer, or other material structure with low impedance and high transparency.
  • the second metal layer 50 Transparent, the second metal layer 50
  • the structure of can be two titanium layers sandwiched by an aluminum layer, or can be other material structures with low impedance and high transparency.
  • the first insulating layer 20 And the second insulating layer 40 The material is silicon nitride.
  • the second insulating layer 40 With the first metal layer 30 Upper via 42 the second metal layer 50 Via the via 42 With the first metal layer 30 contact.
  • Black matrix 60 Hard mask 70 Corresponding to multiple sub-pixels 11 And set up, multiple color resists 80 In multiple openings 51 Can effectively eliminate OLED
  • the reflection of the display device under strong light, black matrix 60 Able to interact with the second metal layer 50 Use the same mask to reduce OLED
  • the number of masks required for the display device manufacturing process effectively reduces the cost and manufacturing process time of the product, and the black matrix 60 Able to the second metal layer 50 Blocking to prevent light on the second metal layer 50 Reflection on the display quality, hard mask 70
  • the second metal layer can be made by patterning 50 Black matrix 60 Black matrix 60
  • the photoresist layer is peeled off to prevent the peeling process from affecting the black matrix 60 Produce damage to ensure product quality.
  • the second embodiment of the present invention OLED
  • the difference between the display device and the above-mentioned first embodiment is that the second insulating layer 40 With multiple sub-pixels 11 Multiple first holes above 41 , Multiple openings 51 Located in multiple first holes 41 Above.
  • Color resistance 80 Set on the first insulating layer 20 Above and in multiple first holes 41 Inside, the rest are the same as the first embodiment, and will not be repeated here.
  • the color resistance in the second embodiment of the present invention 80 versus OLED Display panel 10
  • the distance is greatly reduced and can increase OLED
  • the transmittance of the display device improves the quality of the product.
  • the third embodiment of the present invention OLED
  • the difference between the display device and the above-mentioned first embodiment is that the second insulating layer 40 And the first insulating layer 20 With multiple sub-pixels 11 Multiple second holes above twenty one , Multiple openings 51 Located in multiple second holes twenty one Above.
  • Color resistance 80 Located at OLED Display panel 10 Above and in multiple second holes twenty one Inside, the rest are the same as the first embodiment, and will not be repeated here.
  • the color resistance in the third embodiment of the present invention 80 versus OLED Display panel 10 The distance is further reduced and can be further improved OLED
  • the transmittance of the display device improves the quality of the product.
  • the first embodiment of the present invention OLED
  • the manufacturing method of the display device includes the following steps:
  • step S1 Please refer to the figure 6 ,provide OLED Display panel 10 .
  • Said OLED Display panel 10 Include multiple sub-pixels 11 .
  • the plurality of sub-pixels 11 Including red sub-pixels, green sub-pixels and blue sub-pixels.
  • step S2 Please refer to the figure 7 ,in OLED Display panel 10 First insulating layer 20 , In the first insulating layer 20 First metal layer 30 , In the first metal layer 30 And the first insulating layer 20 A second insulating layer 40 .
  • the first metal layer 30 Transparent, the first metal layer 30
  • the structure of can be two titanium layers sandwiched by an aluminum layer, or can be other material structures with low impedance and high transparency.
  • the first insulating layer 20 And the second insulating layer 40 The material is silicon nitride.
  • steps S2 Forming the second insulating layer 40 And then in the second insulating layer 40 On the first metal layer 30 Upper via 42 .
  • step S3 Please refer to the figure 8 And figure 11 ,
  • the second insulating layer 40 Layer of metal material 59 , Black matrix material layer 69 , Hard mask material layer 79 , On the metal material layer 59 , Black matrix material layer 69 And hard mask material layer 79 Patterned to form the second insulating layer from bottom to top 40 Second metal layer 50 Black matrix 60 Hard mask 70 . Multiple openings 51 Through the second metal layer 50 Black matrix 60 Hard mask 70 Corresponding to multiple sub-pixels 11 And set.
  • the metal material layer 59 Transparent, the metal material layer 59
  • the structure of can be two titanium layers sandwiched by an aluminum layer, or can be other material structures with low impedance and high transparency.
  • the hard mask material layer 79 The material is silicon nitride.
  • the second metal layer 50 Via the via 42 With the first metal layer 30 contact.
  • steps S3 Specifically:
  • step S31 Please refer to the figure 8 , In the second insulating layer 40 Layer of metal material 59 , Black matrix material layer 69 , Hard mask material layer 79 And photoresist layer 901 .
  • step S32 Please refer to the figure 9 , To the photoresist layer 901 Perform exposure and development process to form multiple sub-pixels 11 The third hole above 9011 .
  • step S33 Please refer to the figure 10 , To the photoresist layer 901 Mask to metal material layer 59 , Black matrix material layer 69 And hard mask material layer 79 Patterning to form the second insulating layer 40 Second metal layer 50 Black matrix 60 Hard mask 70 .
  • step S34 Please refer to the figure 11 , To the photoresist layer 901 Perform peeling.
  • step S4 Please refer to the figure 12 ,in OLED Display panel 10 On multiple openings 51 Multiple color resists are formed inside 80 .
  • the steps S4 In the second insulating layer 40 On multiple openings 51 Multiple color resists are formed inside 80 .
  • steps S4 By coating or inkjet printing in OLED Display panel 10 On multiple openings 51 Multiple color resists are formed inside 80 .
  • step S5 Please combine the picture 2 , In the hard mask 70 And multiple color resists 80 Protective layer 90 .
  • the first implementation of the present invention OLED
  • the same mask pair is formed on the second insulating layer 40 Metal material layer 59 , Black matrix material layer 69 And hard mask material layer 79 Patterned to form the second insulating layer from bottom to top 40 Second metal layer 50 Black matrix 60 Hard mask 70 , Multiple openings 51 Through the second metal layer 50 Black matrix 60 Hard mask 70 Corresponding to multiple sub-pixels 11 And set up and in OLED Display panel 10 On multiple openings 51 Color resistance 80 , Making the prepared OLED
  • the display device can reduce the light reflectivity, improve the display quality, and reduce the number of photomasks compared with the prior art, which effectively reduces the cost and process time of the product, and the black matrix 60 Able to the second metal layer 50 Blocking to prevent light on the second metal layer 50 Reflection on the display quality, hard mask 70
  • the second metal layer can be made by patterning 50 Black matrix 60 Black matrix 60 Photoresist layer 901 Prevent the black matrix from being affected by the peeling process during peeling
  • the second embodiment of the present invention OLED
  • the difference between the manufacturing method of the display device and the above-mentioned first embodiment is that the steps S2 Forming the second insulating layer 40 After the second insulating layer 40 Multiple sub-pixels 11 The first hole above 41 .
  • the steps S3 After the end, multiple openings 51 Located in multiple first holes 41 Above.
  • the steps S4 In the first insulating layer 20 On multiple first holes 41
  • Multiple color resists are formed inside 80 .
  • the rest are the same as the first embodiment, and will not be repeated here.
  • the second embodiment of the present invention produced OLED Color resistance in display device 80 versus OLED Display panel 10 The distance is greatly reduced and can increase OLED The transmittance of the display device improves the quality of the product.
  • the third embodiment of the present invention OLED
  • the difference between the manufacturing method of the display device and the above-mentioned first embodiment is that the steps S2 Forming the second insulating layer 40 After the second insulating layer 40 And the first insulating layer 20 Multiple sub-pixels 11 The second hole above twenty one .
  • the steps S3 After the end, multiple openings 51 Located in multiple second holes twenty one Above.
  • the steps S4 In OLED Display panel 10 On multiple second holes twenty one Multiple color resists are formed inside 80 .
  • the rest are the same as the first embodiment, and will not be repeated here.
  • the third embodiment of the present invention is made OLED Color resistance in display device 80 versus OLED Display panel 10 The distance is further reduced and can be further improved OLED The transmittance of the display device improves the quality of the product.
  • the present invention OLED Display device includes OLED Display panel, set in OLED The first insulating layer on the display panel, the first metal layer arranged on the first insulating layer, the second insulating layer arranged on the first metal layer and the first insulating layer, the second insulating layer arranged on the second insulating layer Metal layer, black matrix arranged on the second metal layer, hard mask arranged on the black matrix, and OLED Multiple color resists on the display panel, OLED
  • the display panel includes a plurality of sub-pixels, a plurality of openings penetrate the second metal layer, a black matrix and a hard mask are respectively provided corresponding to the plurality of sub-pixels, and the plurality of color resists are respectively located in the plurality of openings, which can effectively eliminate OLED
  • the display device reflects light under strong light, and the number of masks required for the manufacturing process is small, and the product cost is low.
  • OLED Manufactured by the manufacturing method of the display device OLED The display device can reduce the light reflectivity,

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Optical Filters (AREA)

Abstract

一种OLED显示装置，包括OLED显示面板（10）、设于OLED显示面板（10）上的第一绝缘层（20）、设于第一绝缘层（20）上的第一金属层（30）、设于第一金属层（30）及第一绝缘层（20）上的第二绝缘层（40）、设于第二绝缘层（40）上的第二金属层（50）、设于第二金属层（50）上的黑色矩阵（60）、设于黑色矩阵（60）上的硬掩膜（70）及设于OLED显示面板（10）上的多个色阻（80），OLED显示面板（10）包括多个子像素（11），多个开口（51）贯穿第二金属层（50）、黑色矩阵（60）及硬掩膜（70）分别对应多个子像素（11）而设置，所述多个色阻（80）分别位于多个开口（51）内，能够有效消除OLED显示装置在强光下的反光，且制程所需光罩数量少，产品成本低。

Description

OLED显示装置及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示装置及其制作方法。
 背景技术
有机发光二极管显示装置（Organic Light Emitting Display，OLED）具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED（Passive Matrix OLED，PMOLED）和有源矩阵型OLED（Active Matrix OLED，AMOLED）两大类，即直接寻址和薄膜晶体管（TFT）矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡（ITO）电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
现有的OLED显示装置为了降低在强光下的反射率，会在OLED显示面板的出光侧设置偏光片（POL），此种减反射方法会损失出光，降低OLED显示装置的寿命，且偏光片厚度一般较大、材质脆，不利于动态弯折显示面板的开发。现有的另一种OLED显示装置采用POL-less（无偏光片）技术来降低反射率，具体是用彩色滤光膜替代偏光片，该彩色滤光膜包括分别与OLED显示面板中的子像素对应的色阻以及位于相邻色阻之间的黑色矩阵（BM），彩色滤光层的厚度可以小于5μm，相对于偏光片的厚度（一般为100μm）大大减小，利于OLED显示装置弯折，并且彩色滤光层相比于偏光片能够将出光率由42%提高至60%，能够延长OLED显示装置的使用寿命。
请参阅图1，为一种现有的采用POL-less技术的OLED显示装置，该OLED显示装置包括OLED显示面板100、设于OLED显示面板100上的触控层200、设于触控层200上的第一保护（OC）层300、设于第一保护层300上的彩色滤光层400及设于彩色滤光层400上的第二保护层500。所述OLED显示面板100包括多个子像素110。所述触控层200包括第一绝缘层210、设于第一绝缘层210上的第一金属层220、设于第一绝缘层210及第一金属层220上的第二绝缘层230、设于第二绝缘层230上的第二金属层240。第二绝缘层230设有位于第一金属层220上方的过孔231，第二金属层240经过孔231与第一金属层220接触。第二金属层240设有位于多个子像素110上方的开口241。所述彩色滤光层400包括分别位于多个子像素110上方的多个色阻410及位于色阻410之间的黑色矩阵420。制作该OLED显示装置时，第一金属层220、第二绝缘层230、第二金属层240、黑色矩阵420各需要一道光罩进行图案化，制程所需光罩数量较多，产品成本较高。
 技术问题
本发明的目的在于提供一种OLED显示装置，能够降低光线反射率，且产品成本较低。
本发明的另一目的在于提供一种OLED显示装置的制作方法，制得的OLED显示装置能够降低光线反射率，且产品成本较低。
 技术解决方案
为实现上述目的，本发明首先提供一种OLED显示装置，包括OLED显示面板、设于OLED显示面板上的第一绝缘层、设于第一绝缘层上的第一金属层、设于第一金属层及第一绝缘层上的第二绝缘层、设于第二绝缘层上的第二金属层、设于第二金属层上的黑色矩阵、设于黑色矩阵上的硬掩膜及设于OLED显示面板上的多个色阻；
所述OLED显示面板包括多个子像素；多个开口贯穿所述第二金属层、黑色矩阵及硬掩膜分别对应多个子像素而设置，所述多个色阻分别位于多个开口内。
所述多个色阻设于第二绝缘层上；或者，
所述第二绝缘层设有分别位于多个子像素上方的多个第一孔洞，多个开口分别位于多个第一孔洞上方；所述多个色阻设于第一绝缘层上且分别位于多个第一孔洞内；或者，
所述第二绝缘层及第一绝缘层设有分别位于多个子像素上方的多个第二孔洞，多个开口分别位于多个第二孔洞上方；所述多个色阻设于OLED显示面板上且分别位于多个第二孔洞内。
所述OLED显示装置还包括设于硬掩膜及多个色阻上的保护层。
所述硬掩膜的材料为氮化硅；
所述第一金属层透明，所述第一金属层的结构为两层钛层夹一层铝层；
所述第二金属层透明，所述第二金属层的结构为两层钛层夹一层铝层；
所述第一绝缘层及第二绝缘层的材料为氮化硅；
所述第二绝缘层设有位于第一金属层上方的过孔，所述第二金属层经所述过孔与第一金属层接触。
本发明还提供一种OLED显示装置的制作方法，包括如下步骤：
步骤S1、提供OLED显示面板；
所述OLED显示面板包括多个子像素；
步骤S2、在OLED显示面板上形成第一绝缘层，在第一绝缘层上形成第一金属层，在第一金属层及第一绝缘层上形成第二绝缘层；
步骤S3、在第二绝缘层上依次形成金属材料层、黑色矩阵材料层、硬掩膜材料层，对金属材料层、黑色矩阵材料层及硬掩膜材料层进行图案化形成由下至上依次设于第二绝缘层上的第二金属层、黑色矩阵及硬掩膜；多个开口贯穿所述第二金属层、黑色矩阵及硬掩膜分别对应多个子像素而设置；
步骤S4、在OLED显示面板上于多个开口内形成多个色阻。
所述步骤S4中，在第二绝缘层上于多个开口内形成多个色阻；或者，
所述步骤S2在形成第二绝缘层之后在第二绝缘层上形成分别位于多个子像素上方的第一孔洞；多个开口分别位于多个第一孔洞上方；所述步骤S4中，在第一绝缘层上于多个第一孔洞内形成多个色阻；或者，
所述步骤S2在形成第二绝缘层之后在第二绝缘层及第一绝缘层上形成分别位于多个子像素上方的第二孔洞；多个开口分别位于多个第二孔洞上方；所述步骤S4中，在OLED显示面板上于多个第二孔洞内形成多个色阻。
所述OLED显示装置的制作方法还包括步骤S5、在硬掩膜及多个色阻上形成保护层。
所述硬掩膜材料层的材料为氮化硅；
所述第一金属层透明，所述第一金属层的结构为两层钛层夹一层铝层；
所述金属材料层透明，所述金属材料层的结构为两层钛层夹一层铝层；
所述第一绝缘层及第二绝缘层的材料为氮化硅；
所述步骤S2在形成第二绝缘层之后还在第二绝缘层上形成位于第一金属层上方的过孔，所述第二金属层经所述过孔与第一金属层接触。
所述步骤S3具体包括：
步骤S31、在第二绝缘层上依次形成金属材料层、黑色矩阵材料层、硬掩膜材料层及光阻层；
步骤S32、对光阻层进行曝光显影制程，形成分别位于多个子像素上方的第三孔洞；
步骤S33、以光阻层为掩膜对金属材料层、黑色矩阵材料层及硬掩膜材料层进行图案化，形成依次设于第二绝缘层上的第二金属层、黑色矩阵及硬掩膜；
步骤S34、对光阻层进行剥离。
所述步骤S4中通过涂布或喷墨打印的方式在OLED显示面板上于多个开口内形成多个色阻。
 有益效果
本发明的有益效果：本发明的OLED显示装置包括OLED显示面板、设于OLED显示面板上的第一绝缘层、设于第一绝缘层上的第一金属层、设于第一金属层及第一绝缘层上的第二绝缘层、设于第二绝缘层上的第二金属层、设于第二金属层上的黑色矩阵、设于黑色矩阵上的硬掩膜及设于OLED显示面板上的多个色阻，OLED显示面板包括多个子像素，多个开口贯穿所述第二金属层、黑色矩阵及硬掩膜分别对应多个子像素而设置，所述多个色阻分别位于多个开口内，能够有效消除OLED显示装置在强光下的反光，且制程所需光罩数量少，产品成本低。本发明的OLED显示装置的制作方法制得的OLED显示装置能够降低光线反射率，且产品成本较低。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的一种OLED显示装置的结构示意图；
图2为本发明的OLED显示装置的第一实施例的结构示意图；
图3为本发明的OLED显示装置的第二实施例的结构示意图；
图4为本发明的OLED显示装置的第三实施例的结构示意图；
图5为本发明的OLED显示装置的制作方法的流程图；
图6为本发明的OLED显示装置的制作方法的步骤S1的示意图；
图7为本发明的OLED显示装置的制作方法的第一实施例的步骤S2的示意图；
图8至图11为本发明的OLED显示装置的制作方法的第一实施例的步骤S3的示意图；
图12为本发明的OLED显示装置的制作方法的第一实施例的步骤S4的示意图；
图13为本发明的OLED显示装置的制作方法的第二实施例的步骤S2的示意图；
图14为本发明的OLED显示装置的制作方法的第三实施例的步骤S2的示意图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图 2 ，本发明的第一实施例的 OLED 显示装置包括 OLED 显示面板 10 、设于 OLED 显示面板 10 上的第一绝缘层 20 、设于第一绝缘层 20 上的第一金属层 30 、设于第一金属层 30 及第一绝缘层 20 上的第二绝缘层 40 、设于第二绝缘层 40 上的第二金属层 50 、设于第二金属层 50 上的黑色矩阵 60 、设于黑色矩阵 60 上的硬掩膜 70 及设于 OLED 显示面板 10 上的多个色阻 80 。 OLED 显示面板 10 设有第一绝缘层 20 的一侧为其出光侧，第一绝缘层 20 、第一金属层 30 、第二绝缘层 40 及第二金属层 50 组成位于 OLED 显示面板 10 上的触控层。所述 OLED 显示面板 10 包括多个子像素 11 。多个开口 51 贯穿所述第二金属层 50 、黑色矩阵 60 及硬掩膜 70 分别对应多个子像素 11 而设置，所述多个色阻 80 分别位于多个开口 51 内。
具体地，所述多个子像素 11 包括红色子像素、绿色子像素及蓝色子像素，位于红色子像素上方的色阻 80 为红色色阻，位于绿色子像素上方的色阻 80 为绿色色阻，位于蓝色子像素上方的色阻 80 为蓝色色阻。
具体地，请参阅图 2 ，在本发明的第一实施例中，所述第一绝缘层 20 及第二绝缘层 40 均覆盖多个子像素 11 ，所述多个色阻 80 设于第二绝缘层 40 上。
具体地，所述 OLED 显示装置还包括设于硬掩膜 70 及多个色阻 80 上的保护层 90 。
具体地，所述硬掩膜 70 的材料为氮化硅（ SiNx ）。
具体地，所述第一金属层 30 透明，所述第一金属层 30 的结构可以为两层钛（ Ti ）层夹一层铝（ Al ）层，或者可以为其他具有低阻抗高透明度的材料结构。
具体地，所述第二金属层 50 透明，所述第二金属层 50 的结构可以为两层钛层夹一层铝层，或者可以为其他具有低阻抗高透明度的材料结构。
具体地，所述第一绝缘层 20 及第二绝缘层 40 的材料为氮化硅。
具体地，所述第二绝缘层 40 设有位于第一金属层 30 上方的过孔 42 ，所述第二金属层 50 经所述过孔 42 与第一金属层 30 接触。
需要说明的是，本发明的 OLED 显示装置通过设置多个开口 51 贯穿触控层中的第二金属层 50 、黑色矩阵 60 及硬掩膜 70 分别对应多个子像素 11 而设置，多个色阻 80 分别位于多个开口 51 内，能够有效消除 OLED 显示装置在强光下的反光，黑色矩阵 60 能够与第二金属层 50 采用同一道光罩制作，减小 OLED 显示装置制程所需的光罩数量，有效地降低了产品的成本和制程时间，并且黑色矩阵 60 能够对第二金属层 50 进行遮挡，防止光线在第二金属层 50 上发生反射影响显示品质，硬掩膜 70 能够在图案化制得第二金属层 50 、黑色矩阵 60 后将黑色矩阵 60 上的光阻层剥离时防止剥离制程对黑色矩阵 60 产生损伤，保证产品的品质。
请参阅图 3 ，本发明的第二实施例的 OLED 显示装置与上述第一实施例的区别在于，所述第二绝缘层 40 设有分别位于多个子像素 11 上方的多个第一孔洞 41 ，多个开口 51 分别位于多个第一孔洞 41 上方。所述多个色阻 80 设于第一绝缘层 20 上且分别位于多个第一孔洞 41 内，其余均与第一实施例相同，在此不再赘述。相比于第一实施例，本发明的第二实施例中色阻 80 与 OLED 显示面板 10 的距离被大大减小，能够提升 OLED 显示装置的透过率，提升产品的品质。
请参阅图 4 ，本发明的第三实施例的 OLED 显示装置与上述第一实施例的区别在于，第二绝缘层 40 及第一绝缘层 20 设有分别位于多个子像素 11 上方的多个第二孔洞 21 ，多个开口 51 分别位于多个第二孔洞 21 上方。所述多个色阻 80 设于 OLED 显示面板 10 上且分别位于多个第二孔洞 21 内，其余均与第一实施例相同，在此不再赘述。相比于第一实施例及第二实施例，本发明的第三实施例中色阻 80 与 OLED 显示面板 10 的距离被进一步地减小，能够进一步地提升 OLED 显示装置的透过率，提升产品的品质。
请参阅图 5 ，基于同一发明构思，本发明的第一实施例的 OLED 显示装置的制作方法包括如下步骤：
步骤 S1 、请参阅图 6 ，提供 OLED 显示面板 10 。所述 OLED 显示面板 10 包括多个子像素 11 。
具体地，所述多个子像素 11 包括红色子像素、绿色子像素及蓝色子像素。
步骤 S2 、请参阅图 7 ，在 OLED 显示面板 10 上形成第一绝缘层 20 ，在第一绝缘层 20 上形成第一金属层 30 ，在第一金属层 30 及第一绝缘层 20 上形成第二绝缘层 40 。
具体地，所述第一金属层 30 透明，所述第一金属层 30 的结构可以为两层钛层夹一层铝层，或者可以为其他具有低阻抗高透明度的材料结构。
具体地，所述第一绝缘层 20 及第二绝缘层 40 的材料为氮化硅。
具体地，所述步骤 S2 在形成第二绝缘层 40 之后还在第二绝缘层 40 上形成位于第一金属层 30 上方的过孔 42 。
步骤 S3 、请参阅图 8 及图 11 ，在第二绝缘层 40 上依次形成金属材料层 59 、黑色矩阵材料层 69 、硬掩膜材料层 79 ，对金属材料层 59 、黑色矩阵材料层 69 及硬掩膜材料层 79 进行图案化形成由下至上依次设于第二绝缘层 40 上的第二金属层 50 、黑色矩阵 60 及硬掩膜 70 。多个开口 51 贯穿第二金属层 50 、黑色矩阵 60 及硬掩膜 70 分别对应多个子像素 11 而设置。
具体地，所述金属材料层 59 透明，所述金属材料层 59 的结构可以为两层钛层夹一层铝层，或者可以为其他具有低阻抗高透明度的材料结构。
具体地，所述硬掩膜材料层 79 的材料为氮化硅。
具体地，所述第二金属层 50 经所述过孔 42 与第一金属层 30 接触。
具体地，所述步骤 S3 具体包括：
步骤 S31 、请参阅图 8 ，在第二绝缘层 40 上依次形成金属材料层 59 、黑色矩阵材料层 69 、硬掩膜材料层 79 及光阻层 901 。
步骤 S32 、请参阅图 9 ，对光阻层 901 进行曝光显影制程，形成分别位于多个子像素 11 上方的第三孔洞 9011 。
步骤 S33 、请参阅图 10 ，以光阻层 901 为掩膜对金属材料层 59 、黑色矩阵材料层 69 及硬掩膜材料层 79 进行图案化，形成依次设于第二绝缘层 40 上的第二金属层 50 、黑色矩阵 60 及硬掩膜 70 。
步骤 S34 、请参阅图 11 ，对光阻层 901 进行剥离。
步骤 S4 、请参阅图 12 ，在 OLED 显示面板 10 上于多个开口 51 内形成多个色阻 80 。
具体地，请参阅图 12 ，在本发明的第一实施例中，所述步骤 S4 中，在第二绝缘层 40 上于多个开口 51 内形成多个色阻 80 。
具体地，所述步骤 S4 中通过涂布或喷墨打印的方式在 OLED 显示面板 10 上于多个开口 51 内形成多个色阻 80 。
步骤 S5 、请结合图 2 ，在硬掩膜 70 及多个色阻 80 上形成保护层 90 。
需要说明的是，本发明的第一实施的 OLED 显示装置的制作方法中，采用同一道光罩对形成在第二绝缘层 40 上的金属材料层 59 、黑色矩阵材料层 69 及硬掩膜材料层 79 进行图案化形成由下至上依次设于第二绝缘层 40 上的第二金属层 50 、黑色矩阵 60 及硬掩膜 70 ，多个开口 51 贯穿第二金属层 50 、黑色矩阵 60 及硬掩膜 70 分别对应多个子像素 11 而设置，并在 OLED 显示面板 10 上于多个开口 51 内形成色阻 80 ，使得制得的 OLED 显示装置能够降低光线反射率，提升显示品质，并且相比于现有技术减少了光罩数量，有效地降低了产品的成本和制程时间，并且黑色矩阵 60 能够对第二金属层 50 进行遮挡，防止光线在第二金属层 50 上发生反射影响显示品质，硬掩膜 70 能够在图案化制得第二金属层 50 、黑色矩阵 60 后将黑色矩阵 60 上的光阻层 901 剥离时防止剥离制程对黑色矩阵 60 产生损伤，保证产品的品质。
请参阅图 13 ，本发明的第二实施例的 OLED 显示装置的制作方法与上述第一实施例的区别在于，所述步骤 S2 在形成第二绝缘层 40 之后在第二绝缘层 40 上形成分别位于多个子像素 11 上方的第一孔洞 41 。所述步骤 S3 结束后，多个开口 51 分别位于多个第一孔洞 41 上方。请结合图 3 ，所述步骤 S4 中，在第一绝缘层 20 上于多个第一孔洞 41 内形成多个色阻 80 。其余均与第一实施例相同，在此不再赘述。相比于第一实施例，本发明的第二实施例制得的 OLED 显示装置中色阻 80 与 OLED 显示面板 10 的距离被大大减小，能够提升 OLED 显示装置的透过率，提升产品的品质。
请参阅图 14 ，本发明的第三实施例的 OLED 显示装置的制作方法与上述第一实施例的区别在于，所述步骤 S2 在形成第二绝缘层 40 之后在第二绝缘层 40 及第一绝缘层 20 上形成分别位于多个子像素 11 上方的第二孔洞 21 。所述步骤 S3 结束后，多个开口 51 分别位于多个第二孔洞 21 上方。请结合图 4 ，所述步骤 S4 中，在 OLED 显示面板 10 上于多个第二孔洞 21 内形成多个色阻 80 。其余均与第一实施例相同，在此不再赘述。相比于第一实施例及第二实施例，本发明的第三实施例制得的 OLED 显示装置中色阻 80 与 OLED 显示面板 10 的距离被进一步地减小，能够进一步地提升 OLED 显示装置的透过率，提升产品的品质。
综上所述，本发明的 OLED 显示装置包括 OLED 显示面板、设于 OLED 显示面板上的第一绝缘层、设于第一绝缘层上的第一金属层、设于第一金属层及第一绝缘层上的第二绝缘层、设于第二绝缘层上的第二金属层、设于第二金属层上的黑色矩阵、设于黑色矩阵上的硬掩膜及设于 OLED 显示面板上的多个色阻， OLED 显示面板包括多个子像素，多个开口贯穿第二金属层、黑色矩阵及硬掩膜分别对应多个子像素而设置，所述多个色阻分别位于多个开口内，能够有效消除 OLED 显示装置在强光下的反光，且制程所需光罩数量少，产品成本低。本发明的 OLED 显示装置的制作方法制得的 OLED 显示装置能够降低光线反射率，且产品成本较低。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种OLED显示装置，包括OLED显示面板、设于OLED显示面板上的第一绝缘层、设于第一绝缘层上的第一金属层、设于第一金属层及第一绝缘层上的第二绝缘层、设于第二绝缘层上的第二金属层、设于第二金属层上的黑色矩阵、设于黑色矩阵上的硬掩膜及设于OLED显示面板上的多个色阻；
    所述OLED显示面板包括多个子像素；多个开口贯穿所述第二金属层、黑色矩阵及硬掩膜分别对应多个子像素而设置，所述多个色阻分别位于多个开口内。
  2. 如权利要求1所述的OLED显示装置，其中，所述多个色阻设于第二绝缘层上；或者，
    所述第二绝缘层设有分别位于多个子像素上方的多个第一孔洞，多个开口分别位于多个第一孔洞上方；所述多个色阻设于第一绝缘层上且分别位于多个第一孔洞内；或者，
    所述第二绝缘层及第一绝缘层设有分别位于多个子像素上方的多个第二孔洞，多个开口分别位于多个第二孔洞上方；所述多个色阻设于OLED显示面板上且分别位于多个第二孔洞内。
  3. 如权利要求1所述的OLED显示装置，还包括设于硬掩膜及多个色阻上的保护层。
  4. 如权利要求1所述的OLED显示装置，其中，所述硬掩膜的材料为氮化硅；
    所述第一金属层透明，所述第一金属层的结构为两层钛层夹一层铝层；
    所述第二金属层透明，所述第二金属层的结构为两层钛层夹一层铝层；
    所述第一绝缘层及第二绝缘层的材料为氮化硅；
    所述第二绝缘层设有位于第一金属层上方的过孔，所述第二金属层经所述过孔与第一金属层接触。
  5. 一种OLED显示装置的制作方法，包括如下步骤：
    步骤S1、提供OLED显示面板；
    所述OLED显示面板包括多个子像素；
    步骤S2、在OLED显示面板上形成第一绝缘层，在第一绝缘层上形成第一金属层，在第一金属层及第一绝缘层上形成第二绝缘层；
    步骤S3、在第二绝缘层上依次形成金属材料层、黑色矩阵材料层、硬掩膜材料层，对金属材料层、黑色矩阵材料层及硬掩膜材料层进行图案化形成由下至上依次设于第二绝缘层上的第二金属层、黑色矩阵及硬掩膜；多个开口贯穿所述第二金属层、黑色矩阵及硬掩膜分别对应多个子像素而设置；
    步骤S4、在OLED显示面板上于多个开口内形成多个色阻。
  6. 如权利要求5所述的OLED显示装置的制作方法，其中，所述步骤S4中，在第二绝缘层上于多个开口内形成多个色阻；或者，
    所述步骤S2在形成第二绝缘层之后在第二绝缘层上形成分别位于多个子像素上方的第一孔洞；多个开口分别位于多个第一孔洞上方；所述步骤S4中，在第一绝缘层上于多个第一孔洞内形成多个色阻；或者，
    所述步骤S2在形成第二绝缘层之后在第二绝缘层及第一绝缘层上形成分别位于多个子像素上方的第二孔洞；多个开口分别位于多个第二孔洞上方；所述步骤S4中，在OLED显示面板上于多个第二孔洞内形成多个色阻。
  7. 如权利要求5所述的OLED显示装置的制作方法，还包括步骤S5、在硬掩膜及多个色阻上形成保护层。
  8. 如权利要求5所述的OLED显示装置的制作方法，其中，所述硬掩膜材料层的材料为氮化硅；
    所述第一金属层透明，所述第一金属层的结构为两层钛层夹一层铝层；
    所述金属材料层透明，所述金属材料层的结构为两层钛层夹一层铝层；
    所述第一绝缘层及第二绝缘层的材料为氮化硅；
    所述步骤S2在形成第二绝缘层之后还在第二绝缘层上形成位于第一金属层上方的过孔，所述第二金属层经所述过孔与第一金属层接触。
  9. 如权利要求5所述的OLED显示装置的制作方法，其中，所述步骤S3具体包括：
    步骤S31、在第二绝缘层上依次形成金属材料层、黑色矩阵材料层、硬掩膜材料层及光阻层；
    步骤S32、对光阻层进行曝光显影制程，形成分别位于多个子像素上方的第三孔洞；
    步骤S33、以光阻层为掩膜对金属材料层、黑色矩阵材料层及硬掩膜材料层进行图案化，形成依次设于第二绝缘层上的第二金属层、黑色矩阵及硬掩膜；
    步骤S34、对光阻层进行剥离。
  10. 如权利要求5所述的OLED显示装置的制作方法，其中，所述步骤S4中通过涂布或喷墨打印的方式在OLED显示面板上于多个开口内形成多个色阻。
     
PCT/CN2019/081663 2019-02-27 2019-04-08 Oled显示装置及其制作方法 Ceased WO2020172953A1 (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US16/492,162 US10879498B2 (en) 2019-02-27 2019-04-08 OLED display device and manufacturing method thereof
JP2019540628A JP6987141B2 (ja) 2019-02-27 2019-04-08 Ｏｌｅｄ表示装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910147724.1 2019-02-27
CN201910147724.1A CN109801955A (zh) 2019-02-27 2019-02-27 Oled显示装置及其制作方法

Publications (1)

Publication Number Publication Date
WO2020172953A1 true WO2020172953A1 (zh) 2020-09-03

Family

ID=66561392

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/081663 Ceased WO2020172953A1 (zh) 2019-02-27 2019-04-08 Oled显示装置及其制作方法

Country Status (3)

Country Link
JP (1) JP6987141B2 (zh)
CN (1) CN109801955A (zh)
WO (1) WO2020172953A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110429126B (zh) * 2019-08-22 2021-09-14 昆山国显光电有限公司 显示面板和显示装置
CN110707235B (zh) * 2019-09-19 2021-04-02 武汉华星光电半导体显示技术有限公司 显示面板、显示装置及显示面板的制备方法
CN111769143B (zh) * 2020-06-23 2022-09-09 武汉华星光电半导体显示技术有限公司 显示面板及其制造方法
CN112015301B (zh) * 2020-08-31 2024-03-08 京东方科技集团股份有限公司 Oled显示器件及其制作方法、显示装置
CN111987133B (zh) * 2020-09-02 2022-05-27 京东方科技集团股份有限公司 镜面显示面板及镜面显示装置
CN111883576B (zh) * 2020-09-09 2022-09-02 云谷（固安）科技有限公司 显示面板、显示装置及成型方法
CN114899342A (zh) * 2022-06-24 2022-08-12 昆山国显光电有限公司 显示面板及显示装置
CN119024595B (zh) * 2024-09-30 2025-11-14 惠科股份有限公司 彩色滤光片及其制作方法、显示面板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150331508A1 (en) * 2014-05-16 2015-11-19 Apple Inc. Integrated silicon-oled display and touch sensor panel
CN106293197A (zh) * 2015-06-26 2017-01-04 三星显示有限公司 柔性显示装置
CN107204355A (zh) * 2016-03-18 2017-09-26 三星显示有限公司 显示设备
CN107230693A (zh) * 2016-03-25 2017-10-03 三星显示有限公司 柔性显示装置
CN108735780A (zh) * 2017-04-19 2018-11-02 速博思股份有限公司 有机发光二极管触控显示设备

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11189736B2 (en) * 2015-07-24 2021-11-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9773919B2 (en) * 2015-08-26 2017-09-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150331508A1 (en) * 2014-05-16 2015-11-19 Apple Inc. Integrated silicon-oled display and touch sensor panel
CN106293197A (zh) * 2015-06-26 2017-01-04 三星显示有限公司 柔性显示装置
CN107204355A (zh) * 2016-03-18 2017-09-26 三星显示有限公司 显示设备
CN107230693A (zh) * 2016-03-25 2017-10-03 三星显示有限公司 柔性显示装置
CN108735780A (zh) * 2017-04-19 2018-11-02 速博思股份有限公司 有机发光二极管触控显示设备

Also Published As

Publication number Publication date
CN109801955A (zh) 2019-05-24
JP2021517333A (ja) 2021-07-15
JP6987141B2 (ja) 2021-12-22

Similar Documents

Publication Publication Date Title
WO2020172953A1 (zh) Oled显示装置及其制作方法
US10784471B2 (en) Organic light emitting display device and method of making the same
CN110048005B (zh) 一种oled显示器件及其制备方法
JP6987228B2 (ja) 有機発光ダイオード表示装置及びその製造方法
US10263049B2 (en) Color filter substrate and method of manufacturing the same, organic light emitting display panel and display device
CN103700685B (zh) 一种显示面板、显示装置
US9453948B2 (en) Color filter substrate, manufacturing method thereof and display device
CN110061151A (zh) 一种有机发光二极管面板及其制作方法和显示设备
CN107706221B (zh) Oled显示器的制作方法及oled显示器
US11362152B2 (en) Array substrate, electroluminescent panel and display device
US20160035802A1 (en) Light-emitting device, array substrate, display device and manufacturing method of light-emitting device
WO2020252899A1 (zh) Oled 显示面板及制备方法
CN110265441B (zh) 一种显示面板及其显示装置
CN110098227B (zh) Oled显示面板及其制作方法
WO2020258395A1 (zh) 一种有机电致发光器件及显示面板
WO2016074372A1 (zh) Amoled显示面板及其制作方法、显示装置
CN108666349A (zh) 彩色滤光基板及其制作方法与woled显示器
CN108400154A (zh) Oled面板
CN106206970A (zh) 一种发光面板及其制备方法
KR20100004221A (ko) 상부 발광방식 유기전계발광소자
CN108400153B (zh) 一种oled基板及其制备方法、显示装置
US10268084B2 (en) Display panel having height difference between photo spacers and manufacturing method thereof
US10879498B2 (en) OLED display device and manufacturing method thereof
WO2021027048A1 (zh) 有机发光二极管显示面板
US20160155992A1 (en) Display substrate and manufacturing method thereof and display device

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2019540628

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19917401

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19917401

Country of ref document: EP

Kind code of ref document: A1