WO2020172945A1 - 底发射白光有机发光二极管(woled)及其制作方法、显示装置 - Google Patents

底发射白光有机发光二极管(woled)及其制作方法、显示装置 Download PDF

Info

Publication number
WO2020172945A1
WO2020172945A1 PCT/CN2019/080870 CN2019080870W WO2020172945A1 WO 2020172945 A1 WO2020172945 A1 WO 2020172945A1 CN 2019080870 W CN2019080870 W CN 2019080870W WO 2020172945 A1 WO2020172945 A1 WO 2020172945A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
woled
light
quantum dot
red
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/080870
Other languages
English (en)
French (fr)
Inventor
吴元均
袁伟
矫士博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of WO2020172945A1 publication Critical patent/WO2020172945A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants

Definitions

  • the present invention relates to the field of display technology, in particular to a bottom-emitting white light organic light-emitting diode (WOLED) display panel, a manufacturing method thereof, and a display device.
  • WOLED white light organic light-emitting diode
  • OLED Organic electroluminescent diode
  • LCD liquid crystal display
  • FMM fine metal mask
  • the existing WOLED mainly uses a two-layer or three-layer structure such as blue+yellow (BY) or blue+red+green (BGR) to achieve white light. Due to the wide spectrum of white light, when the color filter (CF) is used to separate white light into the three primary colors of RGB, the RG spectrum is usually wide and the color purity is low. The panel color gamut performance is difficult to break through the NTSC (American Television Standards Committee) 100 %standard. In addition, when the white light is separated into the RG spectrum, only the less red or green part of the white light spectrum can be used, and the blue and yellow light parts have greater energy loss. Therefore, due to the low energy utilization rate of the existing WOLED, the problem of high power consumption during panel operation will be caused.
  • BY blue+yellow
  • BGR blue+red+green
  • the existing WOLED mainly uses a two-layer or three-layer structure such as blue+yellow (BY) or blue+red+green (BGR) to achieve white light. Due to the wide spectrum of white light, when the color filter (CF) is used to separate white light into the three primary colors of RGB, the RG spectrum is usually wide and the color purity is low. The panel color gamut performance is difficult to break through the NTSC (American Television Standards Committee) 100 %standard. In addition, when the white light is separated into the RG spectrum, only the less red or green part of the white light spectrum can be used, and the blue and yellow light parts have greater energy loss. Therefore, due to the low energy utilization rate of the existing WOLED, the problem of high power consumption during panel operation will be caused.
  • BY blue+yellow
  • BGR blue+red+green
  • the invention provides a bottom-emitting white light organic light-emitting diode (WOLED) display panel, a manufacturing method thereof, and a display device.
  • the photoluminescence characteristics in the quantum dot photoconversion layer are used to convert the blue and white light in the WOLED electroluminescence function layer into Red light or green light to enhance the energy utilization efficiency of the WOLED electroluminescent functional layer of the display panel, at the same time improve the color gamut performance of the display panel, and reduce the power consumption of the display panel.
  • the present invention provides a bottom-emitting white light organic light-emitting diode (WOLED) display panel, including a substrate, a thin film transistor, a WOLED color film layer (WOLED-CF), a quantum dot photoconversion layer, and a first Electrode, WOLED electroluminescence functional layer and second electrode.
  • the thin film transistor is arranged on the substrate, and a first protective layer is arranged on the thin film transistor to protect the internal structure of the thin film transistor.
  • a WOLED color film layer (WOLED-CF) is arranged on the first protective layer, the WOLED color film layer is arranged with red, green, blue and white (RGBW) pixels in sequence, and a second protective layer is arranged on the WOLED color film layer.
  • the quantum dot photoconversion layer is arranged on the second protective layer.
  • the quantum dot photoconversion layer includes quantum dot red-green (QD-R&G) luminescent materials arranged corresponding to the red and green (RG) pixels, and a resin layer or a flat layer is arranged on the quantum dot photoconversion layer.
  • the first electrode is arranged on the resin layer or the flat layer thin film transistor, and a red, green, blue and white (RGBW) pixel area is defined on the first electrode.
  • the WOLED electroluminescence function layer is arranged on the first electrode and corresponding to the quantum dot photoconversion layer.
  • the second electrode is arranged on the WOLED electroluminescent functional layer, wherein the blue light of the WOLED electroluminescent functional layer is reduced by the quantum dot red-green (QD-R&G) luminescent material of the quantum dot photoconversion layer Or yellow light is converted into red light and green light, thereby enhancing the brightness of the red pixel and the green pixel.
  • QD-R&G quantum dot red-green
  • the quantum dot red-green (QD-R&G) light-emitting material is arranged corresponding to the red and green (RG) pixels of the WOLED color film layer, and the blue and white of the WOLED color film layer
  • the (BW) pixel corresponds to the quantum dot photoconversion layer being blank, wherein the quantum dot photoconversion layer is a quantum dot enhancement film (QD-EF).
  • the WOLED electroluminescent functional layer includes blue light + yellow light, blue light + red light + yellow light, blue light + red light + yellow light + green light or blue light + red light + green light.
  • the WOLED electroluminescent functional layer includes a 2-layer or 3-layer structure, and is a front or inverted structure.
  • the WOLED electroluminescent functional layer includes a hole injection layer (HIL: HATCN), hole transport layer (HTL: NPB), blue light-emitting layer (B-EML: FIrpic), charge transport layer (TPBi), charge generation layer (BPhen:Li), hole generation layer (HATCN), yellow light emitting layer (Y-EML: PO-48) and charge injection layer (Liq).
  • HIL hole injection layer
  • HTL hole transport layer
  • B-EML blue light-emitting layer
  • TPBi charge transport layer
  • BPhen:Li charge generation layer
  • HTCN hole generation layer
  • Y-EML yellow light emitting layer
  • Liq charge injection layer
  • the present invention further includes a cover glass (CG) and an encapsulation material, the cover glass is arranged above the second electrode, the encapsulation material is attached to and encapsulates the substrate and the cover glass, the
  • the packaging material is perpendicular to the WOLED electroluminescent functional layer, the quantum dot photoconversion layer, and the cover glass.
  • the thin film transistor also includes a gate, a gate insulating layer laminated on the gate, and A source layer, an insulating shielding layer, and source and drain electrodes, the first protective layer is disposed on the source and drain electrodes, wherein the first protective layer is made of resin material, and the thin film transistor has a bottom gate (BG) TFT structure .
  • BG bottom gate
  • the thin film transistor further includes a shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, and a source and drain provided on the substrate.
  • a protective layer is disposed on the interlayer insulating layer and uses silicon oxide (SiOx) as a passivation layer, and the thin film transistor has a double gate (DG) TFT structure.
  • a blank layer or a pixel defining layer is further provided on the first electrode, and the blank layer or the pixel defining layer is adjacent to the WOLED electroluminescent functional layer.
  • the present invention also provides a display device, including:
  • a thin film transistor is arranged on the substrate, and a first protective layer is arranged on the thin film transistor to protect the internal structure of the thin film transistor;
  • a WOLED color film layer (WOLED-CF) is arranged on the first protective layer, the WOLED color film layer is provided with red, green, blue and white (RGBW) pixels in sequence, and a second protective layer is provided on the WOLED color film layer ;
  • the quantum dot photoconversion layer is arranged on the second protective layer, and the quantum dot photoconversion layer includes quantum dot red-green (QD-R&G) luminescent materials arranged corresponding to the red-green (RG) pixels, and A resin layer or a flat layer is arranged on the quantum dot photoconversion layer;
  • QD-R&G quantum dot red-green
  • RG red-green
  • the first electrode is arranged on the resin layer or the flat layer, and a red, green, blue and white (RGBW) pixel area is defined on the first electrode;
  • RGBW red, green, blue and white
  • the WOLED electroluminescence function layer is arranged on the first electrode and corresponding to the quantum dot photoconversion layer;
  • the second electrode is arranged on the WOLED electroluminescent functional layer, wherein the quantum dot red-green (QD-R&G) luminescent material of the quantum dot photoconversion layer is used to connect the WOLED electroluminescent functional layer
  • QD-R&G quantum dot red-green luminescent material of the quantum dot photoconversion layer
  • the polarizing layer is arranged on the other side of the substrate.
  • the quantum dot red-green (QD-R&G) light-emitting material is arranged corresponding to the red and green (RG) pixels of the WOLED color film layer, and the blue and white of the WOLED color film layer
  • the (BW) pixel corresponds to the quantum dot photoconversion layer being blank, wherein the quantum dot photoconversion layer is a quantum dot enhancement film (QD-EF).
  • the WOLED electroluminescent functional layer includes blue light + yellow light, blue light + red light + yellow light, blue light + red light + yellow light + green light or blue light + red light + green light.
  • the WOLED electroluminescent functional layer includes a 2-layer or 3-layer structure, and is a front or inverted structure.
  • the WOLED electroluminescent functional layer includes a hole injection layer (HIL: HATCN), hole transport layer (HTL: NPB), blue light-emitting layer (B-EML: FIrpic), charge transport layer (TPBi), charge generation layer (BPhen:Li), hole generation layer (HATCN), yellow light emitting layer (Y-EML: PO-48) and charge injection layer (Liq).
  • HIL hole injection layer
  • HTL hole transport layer
  • B-EML blue light-emitting layer
  • TPBi charge transport layer
  • BPhen:Li charge generation layer
  • HTCN hole generation layer
  • Y-EML yellow light emitting layer
  • Liq charge injection layer
  • the present invention further includes a cover glass (CG) and an encapsulation material, the cover glass is arranged above the second electrode, the encapsulation material is attached to and encapsulates the substrate and the cover glass, the
  • the packaging material is perpendicular to the WOLED electroluminescent functional layer, the quantum dot photoconversion layer, and the cover glass.
  • the thin film transistor also includes a gate, a gate insulating layer laminated on the gate, and A source layer, an insulating shielding layer, and source and drain electrodes, the first protective layer is disposed on the source and drain electrodes, wherein the first protective layer is made of resin material, and the thin film transistor has a bottom gate (BG) TFT structure .
  • BG bottom gate
  • the thin film transistor further includes a shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, and a source and drain provided on the substrate, wherein the The first protective layer is disposed on the interlayer insulating layer and uses silicon oxide (SiOx) as a passivation layer, and the thin film transistor has a double gate (DG) TFT structure.
  • SiOx silicon oxide
  • DG double gate
  • a blank layer or a pixel defining layer is further provided on the first electrode, and the blank layer or the pixel defining layer is adjacent to the WOLED electroluminescent functional layer.
  • the present invention also provides a method for manufacturing a bottom emitting white light organic light emitting diode (WOLED) display panel, which includes the following steps:
  • a WOLED color film layer (WOLED-CF) is formed on the first protective layer, the WOLED color film layer sequentially forms red, green, blue and white (RGBW) pixels, and a second protection is formed on the WOLED color film layer Floor;
  • a quantum dot photoconversion layer (QD-PL conversion layer) is formed on the second protective layer, and the quantum dot photoconversion layer includes quantum dots filled with red and green (RG) pixels.
  • QD-R&G quantum dot photoconversion layer
  • a second electrode is formed on the WOLED electroluminescent functional layer, wherein the WOLED electroluminescent functional layer is combined with the quantum dot red-green (QD-R&G) light-emitting material of the quantum dot photoconversion layer
  • QD-R&G quantum dot red-green
  • the blue or yellow light is converted into red light and green light, thereby enhancing the brightness of the red pixel and the green pixel.
  • the quantum dot photoconversion layer is made by inkjet printing, nozzle printing or transfer molding process, and the quantum dot photoconversion layer also includes quantum dot red-green (QD) -R&G) luminescent material is filled in the corresponding red and green (RG) pixel area, the quantum dot red and green luminescent material is not filled in the blue and white (BW) pixel area, and the quantum dot photoconversion layer is a quantum dot Reinforce the film, and the thickness is 10-200 nanometers (nm).
  • QD quantum dot red-green
  • RG red and green
  • BW blue and white
  • the WOLED electroluminescent functional layer includes blue light + yellow light, blue light + red light + yellow light, blue light + red light + yellow light + green light or blue light + red light + Any combination of green light colors.
  • a blank layer or a pixel defining layer is further formed on the first electrode, and the blank layer or the pixel defining layer is adjacent to the WOLED electroluminescent functional layer, and Define the red, green, blue and white (RGBW) pixel area.
  • RGBW red, green, blue and white
  • step S30 it includes coating a resin material or depositing silicon oxide on the thin film transistor and patterning through development and exposure to form the first protective layer.
  • step S70 after step S70, it further includes a cover glass (CG) covering the second electrode and a packaging material for bonding and packaging the substrate and the cover glass, and the packaging material passes through Blocking encapsulation, blocking filling encapsulation, frit encapsulation, surface sealing encapsulation or thin film encapsulation.
  • CG cover glass
  • the invention adds a quantum dot photoconversion layer between the WOLED electroluminescence functional layer and the WOLED color film layer, wherein the quantum dot photoconversion layer contains an organic material matrix, which does not affect the WOLED transparent display, flexible display, and free display form And other characteristics.
  • the quantum dot photoconversion layer can convert the blue light in the short-wavelength part of the WOLED electroluminescence functional layer into red or green light by using the photoluminescence characteristics of the quantum dot luminescent material, so as to increase the display panel’s impact on the WOLED electroluminescence functional layer. Energy utilization efficiency, while improving the color gamut performance of the display panel, and reducing the power consumption of the display panel.
  • FIG. 1 is a schematic cross-sectional view of a bottom emitting white light organic light emitting diode (WOLED) display panel;
  • WOLED white light organic light emitting diode
  • FIG. 2 is another schematic cross-sectional view of the bottom-emitting white light organic light-emitting diode (WOLED) display panel of the present invention.
  • WOLED white light organic light-emitting diode
  • FIG. 3 is a block diagram of a manufacturing method of a bottom emitting white light organic light emitting diode (WOLED) display panel of the present invention.
  • WOLED white light organic light emitting diode
  • FIG. 1 is a schematic diagram of a first preferred embodiment of the present invention.
  • the present invention provides a bottom-emitting white light organic light-emitting diode (WOLED) display panel, comprising a substrate 1, a thin film transistor 2, a WOLED color film layer (WOLED-CF) 3, a quantum dot photoconversion layer 4, a first electrode 5, and WOLED
  • the substrate 1 includes, but is not limited to, a rigid substrate, a flexible substrate, or other suitable substrates, and the flexible substrates are, for example, glass substrates, polyimide substrates, etc., which are not limited.
  • the thin film transistor 2 is disposed on the substrate 1, and a first protective layer 11 is disposed on the thin film transistor 2 to protect the internal structure of the thin film transistor 2.
  • the WOLED color film layer 3 (WOLED-CF) is disposed on the first protective layer 11, the WOLED color film layer 3 is provided with red, green, blue and white (RGBW) pixels in sequence, and the WOLED color film layer 3 is provided with a second Two protective layer 12.
  • a QD-PL conversion layer 4 QD-PL conversion layer is disposed on the second protective layer 12.
  • the quantum dot photoconversion layer 4 includes quantum dot red-green (QD-R&G) luminescent materials arranged corresponding to the red and green (RG) pixels, and a resin layer or a flat layer is arranged on the quantum dot photoconversion layer 4 13.
  • the first electrode 5 is arranged on the resin layer or the flat layer 13, and a red, green, blue and white (RGBW) pixel area is defined on the first electrode 5.
  • the WOLED electroluminescence functional layer 6 is arranged on the first electrode 5 and corresponding to the quantum dot photoconversion layer 4.
  • the second electrode 7 is arranged on the WOLED electroluminescent functional layer 6, wherein the quantum dot red-green (QD-R&G) light-emitting material (the figure omitted) of the quantum dot photoconversion layer 4 combines the WOLED
  • QD-R&G quantum dot red-green
  • the blue light or yellow light of the electroluminescent functional layer 6 is converted into red light and green light, thereby enhancing the brightness of the red pixel and the green pixel, so as to improve the color gamut performance of the bottom emission WOLED display panel.
  • the quantum dot photoconversion layer 4 includes arranging the quantum dot red-green (QD-R&G) light-emitting material corresponding to the red and green (RG) pixels of the WOLED color film layer 3, and the WOLED color film layer
  • the blue and white (BW) pixels of 3 are blank corresponding to the quantum dot photoconversion layer 4, that is, the quantum dot red and green light-emitting materials are not filled in the blue and white pixel area.
  • the quantum dot photoconversion layer 4 of this embodiment is preferably a quantum dot enhanced film (QD-EF, Quantum Dot Enhancement Film).
  • the present invention utilizes the photoluminescence characteristics of the quantum dot red-green (QD-R&G) luminescent material in the quantum dot photoconversion layer 4 to convert the blue and white light in the WOLED electroluminescence functional layer 6 into red or green light, In order to enhance the energy utilization efficiency of the WOLED electroluminescent functional layer 6 of the display panel, at the same time improve the color gamut performance of the display panel, and reduce the power consumption of the display panel.
  • QD-R&G quantum dot red-green
  • the WOLED electroluminescent functional layer 6 includes any combination of blue light+yellow light, blue light+red light+yellow light, blue light+red light+yellow light+green light, or blue light+red light+green light color.
  • the WOLED electroluminescent functional layer 6 includes 2 stacks, 3 stacks, or other multi-layered structures, and can be upright or inverted, which can be changed as needed.
  • the WOLED electroluminescent functional layer 6 also includes a hole injection layer (HIL: HATCN), a hole transport layer (HTL: NPB), blue light-emitting layer (B-EML: FIrpic), charge transport layer (TPBi), charge generation layer (BPhen:Li), hole generation layer (HATCN), yellow light-emitting layer (Y-EML: PO- 48) and charge injection layer (Liq).
  • HIL hole injection layer
  • HTL hole transport layer
  • B-EML blue light-emitting layer
  • TPBi charge transport layer
  • BPhen:Li charge generation layer
  • HTCN hole generation layer
  • Y-EML yellow light-emitting layer
  • Liq charge injection layer
  • FIG. 1 it further includes a cover glass 8 (CG) covering the second electrode 7 and an encapsulation material 10 (encapsulation glass) for bonding and packaging the substrate 1 and the cover glass 8 material).
  • the packaging material 10 is perpendicular to the WOLED electroluminescence functional layer 6, the quantum dot photoconversion layer 4 and the protective glass 8.
  • the thin film transistor 2 further includes a gate 21 provided on the substrate 1, a gate insulating layer 22 laminated on the gate 21, an active layer 23, an insulating shielding layer 24, and source and drain 25.
  • the first protective layer 11 is disposed on the source and drain 25 and the first protective layer 11 is preferably a resin layer, so as to achieve the function of protecting each layer of the thin film transistor 2.
  • the first electrode 5 is disposed on the resin layer and is electrically connected to the source and drain 25.
  • the thin film transistor 2 shown in FIG. 1 is, for example, a bottom gate (BG) TFT structure.
  • FIG. 2 is a schematic diagram of a second specific embodiment of the present invention.
  • the thin film transistor 2' is, for example, a double gate (DG) TFT structure.
  • the thin film transistor 2'further includes a shielding layer 21' disposed on the substrate 1, a buffer layer 22' laminated on the shielding layer 21', an active layer 23', and a gate insulating layer 24 ', the gate 25', the interlayer insulating layer 26', and the source and drain 27.
  • the first protective layer 11 is disposed on the interlayer insulating layer 24' and uses silicon oxide (SiOx) as a passivation layer, so as to protect each layer of the thin film transistor 2'.
  • the first electrode 3 is disposed on the passivation layer and electrically connected to the source and drain 25'.
  • a blank layer 14 (FIG. 1) or a pixel defining layer 14 (FIG. 2) is further provided on the first electrode 5.
  • the blank layer 14 or the pixel defining layer 14 is adjacent to the WOLED electroluminescent functional layer 6.
  • the present invention also provides a display device including a polarizing layer 9 (polarizing layer 9) arranged on the other side of the substrate 1 layer), and the bottom-emitting white light organic light emitting diode (WOLED) display panel as described in the above embodiment.
  • the polarizing layer 9 can achieve high brightness and high contrast characteristics.
  • polarizing layer 9 can achieve high brightness and high contrast characteristics.
  • FIG. 3 is a block diagram of a manufacturing method of a bottom emitting white light organic light emitting diode (WOLED) display panel of the present invention.
  • the present invention also provides a method for manufacturing a bottom emitting white light organic light-emitting diode (WOLED) display panel, which includes the following steps: S10, providing a substrate 1; S20, fabricating and forming the thin film transistors 2, 2'on the substrate 1.
  • a second electrode 7 is formed on the WOLED electroluminescent functional layer 6, wherein
  • the quantum dot red-green (QD-R&G) luminescent material of the quantum dot photoconversion layer 4 converts the blue or yellow light of the WOLED electroluminescent functional layer 6 into red light and green light, thereby enhancing the red light And the brightness of the green light, and reduce the power consumption of the display panel.
  • a blank layer 14 or a pixel defining layer 14 is further formed on the first electrode 5.
  • the blank layer 14 or the pixel defining layer 14 is adjacent to the WOLED electroluminescent functional layer 6.
  • the WOLED electroluminescent functional layer 6 includes any of blue light + yellow light, blue light + red light + yellow light, blue light + red light + yellow light + green light or blue light + red light + green light.
  • the WOLED electroluminescent functional layer 6 can include a 2-layer, 3-layer or multi-layer structure, and has a front or inverted structure, which can be changed as needed.
  • the material of the second electrode 7 is Ag, for example, and the thickness is 100-200 nanometers (nm).
  • the second electrode 5 has good light transmittance in the visible light region.
  • the quantum dot photoconversion layer 4 is printed by ink-jet printing or nozzle printing. printing) or transfer molding (transfer) process technology.
  • the quantum dot photoconversion layer 4 also fills the quantum dot red-green (QD-R&G) luminescent material (the figure is omitted) in the corresponding red-green (RG) pixel area, and the quantum dot red-green luminescent material is not filled In the blue and white (BW) pixel region, that is, the quantum dot red and green light-emitting materials corresponding to the blue and white (BW) pixel region are blank.
  • the quantum dot photoconversion layer 4 of this embodiment is preferably a quantum dot enhanced film (QD-EF, Quantum Dot Enhancement Film), and the thickness is 10-200 nanometers (nm).
  • step S70 it further includes a cover glass 8 (CG) covering the second electrode 7 and an encapsulation material 10 (encapsulation glass) for bonding and packaging the substrate 1 and the cover glass 8. material).
  • the encapsulation material 10 passes through the blocking encapsulation (Dam package), block filling package (Dam&Fill package), frit package (Frit package), face-seal package (Face-seal package)
  • the substrate 1 and the cover glass 8 are attached and encapsulated by processes such as package) or thin film packaging (TFE).
  • the method for preparing the thin film transistor 2 includes sequentially depositing an Al/Mo metal layer on the substrate 1, and performing processes such as exposure, development, etching, and stripe to the metal The layer is patterned to form the gate 21.
  • An IGZO layer Indium Gallium Zinc Oxide
  • the IGZO layer is patterned through processes such as exposure, development, etching, and film stripping to form the active layer 23.
  • SiOX is deposited on the active layer 23, and the SiOX is patterned through processes such as exposure, development, etching, and film stripping to form an insulating shielding layer 24 and protect the active layer 23.
  • a Mo/Al/Mo metal layer is sequentially deposited on the insulating shielding layer 24, and the Mo/Al/Mo metal layer is patterned through processes such as exposure, development, etching, and film stripping to form the source and drain electrodes 25.
  • the source and drain electrodes 25 are coated with resin, and then the resin is patterned through processes such as exposure and development to form the first protective layer 11 of the resin layer and provide passivation protection for each layer.
  • a Mo metal layer is sequentially deposited on the substrate 1, and the Mo metal layer is patterned through processes such as exposure, development, etching, and film stripping to form a shielding layer 15 (shielding layer 15). layer).
  • SiOX is deposited on the shielding layer 15 as a buffer layer 16.
  • IGZO is deposited on the buffer layer 16, and the IGZO layer is patterned through processes such as exposure, development, etching, and film stripping to form the active layer 21'.
  • SiOX is deposited on the active layer 21' to form a gate insulating layer 22' and protect the active layer 21'.
  • a Mo/Al/Mo metal layer is sequentially deposited on the gate insulating layer 22', and the Mo/Al/Mo metal layer is patterned through processes such as exposure, development, etching, and film stripping to form the gate 23'.
  • SiOX is deposited on the gate 23' as the interlayer insulating layer 24', and then the interlayer insulating layer 24' and the buffer layer 16 are patterned through processes such as exposure, development, etching, and film stripping.
  • a Mo/Al/Mo metal layer is deposited on the interlayer insulating layer 24', and then the metal layer is patterned through processes such as exposure, development, etching, and film stripping to form the source drain 25' and the capacitor.
  • Source and drain electrodes 25' as the first protective layer 11 (ie, passivation layer), and then pattern the passivation layer through processes such as exposure, development, etching, and film stripping, so as to target the source and drain electrodes 25' Protect it.
  • first protective layer 11 ie, passivation layer
  • the present invention can convert the blue light in the short-wavelength portion of the WOLED electroluminescence functional layer 5 into red or green light by using the photoluminescence characteristics of the quantum dot light-emitting material through the quantum dot photoconversion layer 4, so as to increase the display panel
  • the energy utilization efficiency of the WOLED electroluminescent functional layer 5 improves the color gamut performance of the display panel and reduces the power consumption of the display panel.

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

一种底发射WOLED显示面板包括基板、薄膜晶体管、WOLED彩膜层、量子点光致转换层、第一电极、WOLED电致发光功能层及第二电极。WOLED彩膜层依次设置红绿蓝白像素。量子点光致转换层包括对应所述红绿像素设置的量子点红绿发光材料。WOLED电致发光功能层设置在所述第一电极上。第二电极设置在所述WOLED电致发光功能层上，通过所述量子点光致转换层的所述量子点红绿发光材料将所述WOLED电致发光功能层的蓝光或黄光转换成红光和绿光。

Description

底发射白光有机发光二极管(WOLED)及其制作方法、显示装置 技术领域
本发明涉及一种显示技术领域，尤其是涉及一种底发射白光有机发光二极管(WOLED)显示面板及其制作方法、显示装置。
 背景技术
有机电致发光二极管（OLED）是一种新型显示技术，与LCD显示技术相比，具有主动发光，色彩真实，无限对比度，零延迟，透明显示、柔性显示、自由形态显示（Free-Form D绝缘遮蔽play）等特性，是可以替代液晶显示技术的下一代显示技术。OLED显示技术由于不需要背光源，结构较LCD更为简单，显示产品体积可以做到更轻薄。在大尺寸面板显示技术中主要应用的是白光有机发光二极管(WOLED)，WOLED技术区别于广泛应用于小尺寸的并排(side-by-side)RGB技术，最大优势是在制程中不需要精细金属掩膜板(FMM，fine metal mask)，因此可以大幅降低设备成本。
然而现有的WOLED主要利用蓝色+黄色(BY)或蓝色+红色+绿色(BGR)等两叠层或三叠层结构实现白光。由于白光光谱较宽，利用彩色滤光片(CF)将白光分离成RGB三基色时，RG光谱通常较宽，色纯度较低，面板色域表现难以突破NTSC(美国电视标准委员会)制定的100%标准。此外，白光分离成RG光谱时，仅能利用白光光谱中较少的红光或绿光部分，蓝光及黄光部分能量损失较大。因此现有的WOLED由于能量利用率较低，将造成面板工作时功耗较高的问题。
 技术问题
然而现有的WOLED主要利用蓝色+黄色(BY)或蓝色+红色+绿色(BGR)等两叠层或三叠层结构实现白光。由于白光光谱较宽，利用彩色滤光片(CF)将白光分离成RGB三基色时，RG光谱通常较宽，色纯度较低，面板色域表现难以突破NTSC(美国电视标准委员会)制定的100%标准。此外，白光分离成RG光谱时，仅能利用白光光谱中较少的红光或绿光部分，蓝光及黄光部分能量损失较大。因此现有的WOLED由于能量利用率较低，将造成面板工作时功耗较高的问题。
 技术解决方案
本发明提供一种底发射白光有机发光二极管(WOLED)显示面板及其制作方法、显示装置，利用量子点光致转换层内的光致发光特性将WOLED电致发光功能层中的蓝白光转换成红光或绿光，以增强显示面板对WOLED电致发光功能层的能量利用效率，同时提高显示面板的色域表现，并降低显示面板的功耗。
为达成本发明的前述目的，本发明提供一种底发射白光有机发光二极管(WOLED)显示面板，包括基板、薄膜晶体管、WOLED彩膜层(WOLED-CF)、量子点光致转换层、第一电极、WOLED电致发光功能层及第二电极。薄膜晶体管设置在所述基板上，在所述薄膜晶体管上设置第一保护层以保护所述薄膜晶体管内结构。WOLED彩膜层(WOLED-CF)设置在所述第一保护层上，所述WOLED彩膜层依次设置红绿蓝白(RGBW)像素并在所述WOLED彩膜层上设置第二保护层。量子点光致转换层，设置在所述第二保护层上。所述量子点光致转换层包括对应所述红绿(RG)像素设置的量子点红绿(QD-R&G)发光材料，在所述量子点光致转换层上设置树脂层或平坦层。第一电极设置在所述树脂层或所述平坦层薄膜晶体管上，并在所述第一电极上定义出红绿蓝白(RGBW)像素区域。WOLED电致发光功能层设置在所述第一电极上并对应所述量子点光致转换层设置。第二电极设置在所述WOLED电致发光功能层上，其中通过所述量子点光致转换层的所述量子点红绿(QD-R&G)发光材料将所述WOLED电致发光功能层的蓝光或黄光转换成红光和绿光，从而提升所述红色像素和所述绿色像素的亮度。
根据本发明一实施例，所述量子点红绿(QD-R&G)发光材料对应所述WOLED彩膜层的所述红绿(RG)像素设置，而所述WOLED彩膜层的所述蓝白(BW)像素对应所述量子点光致转换层为空白，其中所述量子点光致转换层为量子点增强薄膜(QD-EF)。
根据本发明一实施例，所述WOLED电致发光功能层包含蓝光+黄光、蓝光+红光+黄光、蓝光+红光+黄光+绿光或蓝光+红光+绿光光色中任一组合，所述WOLED电致发光功能层包含2叠层或3叠层结构，且为正置或倒置结构。
根据本发明一实施例，所述WOLED电致发光功能层包括空穴注入层(HIL: HATCN)、空穴传输层(HTL: NPB)、蓝色发光层(B-EML: FIrpic)、电荷传输层(TPBi)、电荷产生层(BPhen:Li)、空穴产生层(HATCN)、黄光发光层(Y-EML: PO-48)和电荷注入层(Liq)。
根据本发明一实施例，还包括防护玻璃(CG)及封装材料，所述防护玻璃盖设在所述第二电极上方，所述封装材料贴合并封装所述基板和所述防护玻璃，所述封装材料与所述WOLED电致发光功能层、所述量子点光致转换层和所述防护玻璃垂直，所述薄膜晶体管还包括栅极、层叠在所述栅极上的栅极绝缘层、有源层、绝缘遮蔽层以及源漏极，所述第一保护层设置在所述源漏极上，其中所述第一保护层为树脂材料，及所述薄膜晶体管为底栅(BG)TFT结构。
根据本发明一实施例，所述薄膜晶体管还包括设置在所述基板上的遮蔽层、缓冲层、有源层、栅极绝缘层、栅极、层间绝缘层以及源漏极，所述第一保护层设置于所述层间绝缘层上且以氧化硅(SiOx)作为钝化层，及所述薄膜晶体管为双栅(DG)TFT结构。
根据本发明一实施例，所述第一电极上还设置有空白层或像素限定层，所述空白层或所述像素限定层邻接所述WOLED电致发光功能层。
本发明还提供一种显示装置，包括:
基板；
薄膜晶体管，设置在所述基板上，在所述薄膜晶体管上设置第一保护层以保护所述薄膜晶体管内结构；
WOLED彩膜层(WOLED-CF)，设置在所述第一保护层上，所述WOLED彩膜层依次设置红绿蓝白(RGBW)像素并在所述WOLED彩膜层上设置第二保护层；
量子点光致转换层，设置在所述第二保护层上，所述量子点光致转换层包括对应所述红绿(RG)像素设置的量子点红绿(QD-R&G)发光材料，在所述量子点光致转换层上设置树脂层或平坦层；
第一电极，设置在所述树脂层或所述平坦层上，并在所述第一电极上定义出红绿蓝白(RGBW)像素区域；
WOLED电致发光功能层，设置在所述第一电极上并对应所述量子点光致转换层设置；
第二电极，设置在所述WOLED电致发光功能层上，其中通过所述量子点光致转换层的所述量子点红绿(QD-R&G)发光材料将所述WOLED电致发光功能层的蓝光或黄光转换成红光和绿光，从而提升所述红色像素和所述绿色像素的亮度,及
偏光层，设置在所述基板的另一侧面上。
根据本发明一实施例，所述量子点红绿(QD-R&G)发光材料对应所述WOLED彩膜层的所述红绿(RG)像素设置，而所述WOLED彩膜层的所述蓝白(BW)像素对应所述量子点光致转换层为空白，其中所述量子点光致转换层为量子点增强薄膜(QD-EF)。
根据本发明一实施例，所述WOLED电致发光功能层包含蓝光+黄光、蓝光+红光+黄光、蓝光+红光+黄光+绿光或蓝光+红光+绿光光色中任一组合，所述WOLED电致发光功能层包含2叠层或3叠层结构，且为正置或倒置结构。
根据本发明一实施例，所述WOLED电致发光功能层包括空穴注入层(HIL: HATCN)、空穴传输层(HTL: NPB)、蓝色发光层(B-EML: FIrpic)、电荷传输层(TPBi)、电荷产生层(BPhen:Li)、空穴产生层(HATCN)、黄光发光层(Y-EML: PO-48)和电荷注入层(Liq)。
根据本发明一实施例，还包括防护玻璃(CG)及封装材料，所述防护玻璃盖设在所述第二电极上方，所述封装材料贴合并封装所述基板和所述防护玻璃，所述封装材料与所述WOLED电致发光功能层、所述量子点光致转换层和所述防护玻璃垂直，所述薄膜晶体管还包括栅极、层叠在所述栅极上的栅极绝缘层、有源层、绝缘遮蔽层以及源漏极，所述第一保护层设置在所述源漏极上，其中所述第一保护层为树脂材料，及所述薄膜晶体管为底栅(BG)TFT结构。
根据本发明一实施例，所述薄膜晶体管还包括设置在所述基板上的遮蔽层、缓冲层、有源层、栅极绝缘层、栅极、层间绝缘层以及源漏极，其中所述第一保护层设置于所述层间绝缘层上且以氧化硅(SiOx)作为钝化层，及所述薄膜晶体管为双栅(DG)TFT结构。
根据本发明一实施例，所述第一电极上还设置有空白层或像素限定层，所述空白层或所述像素限定层邻接所述WOLED电致发光功能层。
再者，本发明还提供底发射白光有机发光二极管(WOLED)显示面板的制作方法，包括以下步骤：
S10、提供基板；
S20、在基板上制作形成所述薄膜晶体管，以及在所述薄膜晶体管上形成第一保护层；
S30、在所述第一保护层上形成WOLED彩膜层(WOLED-CF)，所述WOLED彩膜层依次形成红绿蓝白(RGBW)像素并在所述WOLED彩膜层上形成第二保护层；
S40、在所述第二保护层上形成量子点光致转换层(QD-PL conversion layer)，所述量子点光致转换层包括对应所述红绿(RG)像素填充的量子点红绿(QD-R&G)发光材料，在所述量子点光致转换层上形成树脂层或平坦层；
S50、在所述树脂层或平坦层上形成第一电极，并在所述第一电极上定义出红绿蓝白(RGBW)像素区域；
S60、在所述第一电极上形成WOLED电致发光功能层并对应所述量子点光致转换层设置；及
S70、在所述WOLED电致发光功能层上形成第二电极，其中通过所述量子点光致转换层的所述量子点红绿(QD-R&G)发光材料将所述WOLED电致发光功能层的蓝光或黄光转换成红光和绿光，从而提升所述红色像素和所述绿色像素的亮度。
根据本发明一实施例，在步骤S40中，所述量子点光致转换层通过喷墨打印、喷嘴印刷或转移成型工艺制成，所述量子点光致转换层还将量子点红绿(QD-R&G)发光材料填充在相应的红绿(RG)像素区域中，所述量子点红绿发光材料则不填充于蓝白(BW)像素区域中，所述量子点光致转换层为量子点增强薄膜，且厚度为10-200奈米(nm)。
根据本发明一实施例，在步骤S60中，所述WOLED电致发光功能层包含蓝光+黄光、蓝光+红光+黄光、蓝光+红光+黄光+绿光或蓝光+红光+绿光光色中任一组合。
根据本发明一实施例，在步骤S60后，在所述第一电极上还形成有空白层或像素限定层，所述空白层或所述像素限定层邻接所述WOLED电致发光功能层，并定义所述红绿蓝白(RGBW)像素区域。
根据本发明一实施例，在步骤S30中，包括在所述薄膜晶体管上涂布树脂材料或沉积氧化硅并通过显影、曝光形成图案化，以形成所述第一保护层。
根据本发明一实施例，在步骤S70后，还包括盖设在所述第二电极上方的防护玻璃(CG)以及贴合并封装所述基板和所述防护玻璃的封装材料，所述封装材料通过阻塞封装、阻塞填入封装、熔块封装、面密封封装或薄膜封装。
 有益效果
本发明在WOLED电致发光功能层和WOLED彩膜层之间增加一层量子点光致转换层，其中量子点光致转换层包含有机材料基质，不影响WOLED透明显示、柔性显示、显示形态自由等特性。量子点光致转换层能够将WOLED电致发光功能层中短波长部分的蓝光利用量子点发光材料的光致发光特性转换成红光或绿光，以增加显示面板对WOLED电致发光功能层的能量利用效率，同时提高显示面板的色域表现，并降低显示面板的功耗。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为底发射白光有机发光二极管(WOLED)显示面板的横截面示意图；
图2为本发明底发射白光有机发光二极管(WOLED)显示面板的另一横截面示意图；及
图3为本发明底发射白光有机发光二极管(WOLED)显示面板的制作方法的方块图。
 本发明的最佳实施方式
在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、 [内]、[外]、[侧面]、[竖直]、[水平]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
请参照图1所示，为本发明第一较佳具体实施例示意图。本发明提供一种底发射白光有机发光二极管(WOLED)显示面板，包括基板1、薄膜晶体管2、WOLED彩膜层(WOLED-CF)3、量子点光致转换层4、第一电极5、WOLED电致发光功能层6及第二电极7 。所述基板1包含但不限于刚性基板、柔性基板或其他适合基板，其中柔性基板例如玻璃基板、聚酰亚胺基板等，并不限定。
薄膜晶体管2设置在所述基板1上，在所述薄膜晶体管2上设置第一保护层11以保护所述薄膜晶体管2内结构。WOLED彩膜层3(WOLED-CF)设置在所述第一保护层11上，所述WOLED彩膜层3依次设置红绿蓝白(RGBW)像素并在所述WOLED彩膜层3上设置第二保护层12。量子点光致转换层4(QD-PL conversion layer)，设置在所述第二保护层12上。
所述量子点光致转换层4包括对应所述红绿(RG)像素设置的量子点红绿(QD-R&G)发光材料，在所述量子点光致转换层4上设置树脂层或平坦层13。第一电极5设置在所述树脂层或所述平坦层13上，并在所述第一电极5上定义出红绿蓝白(RGBW)像素区域。WOLED电致发光功能层6设置在所述第一电极5上并对应所述量子点光致转换层4设置。第二电极7设置在所述WOLED电致发光功能层6上，其中通过所述量子点光致转换层4的所述量子点红绿(QD-R&G)发光材料(图略)将所述WOLED电致发光功能层6的蓝光或黄光转换成红光和绿光，从而提升所述红色像素和所述绿色像素的亮度，达到提升底发射WOLED显示面板的色域表现。
所述量子点光致转换层4包含将所述量子点红绿(QD-R&G)发光材料对应所述WOLED彩膜层3的所述红绿(RG)像素设置，而所述WOLED彩膜层3的所述蓝白(BW)像素对应所述量子点光致转换层4为空白，即所述量子点红绿发光材料不填充于蓝白像素区域中。本实施例的所述量子点光致转换层4优选为量子点增强薄膜(QD-EF，Quantum Dot Enhancement Film)。因此，本发明利用量子点光致转换层4内的量子点红绿(QD-R&G)发光材料的光致发光特性将WOLED电致发光功能层6中的蓝白光转换成红光或绿光，以增强显示面板对WOLED电致发光功能层6的能量利用效率，同时提高显示面板的色域表现，并降低显示面板的功耗。
所述WOLED电致发光功能层6包含蓝光+黄光、蓝光+红光+黄光、蓝光+红光+黄光+绿光或蓝光+红光+绿光光色中任一组合。所述WOLED电致发光功能层6包含2叠层(2 stacks)、3叠层(3 stacks)或其它多叠层结构，且可为正置或倒置结构，均视需要而改变。
所述WOLED电致发光功能层6还包括空穴注入层(HIL: HATCN)、空穴传输层(HTL: NPB)、蓝色发光层(B-EML: FIrpic)、电荷传输层(TPBi)、电荷产生层(BPhen:Li)、空穴产生层(HATCN)、黄光发光层(Y-EML: PO-48)和电荷注入层(Liq)。
在如图1所示的实施例中，还包括盖设在所述第二电极7上方的防护玻璃8(CG)以及贴合并封装所述基板1和所述防护玻璃8的封装材料10(encapsulation material)。所述封装材料10与所述WOLED电致发光功能层6、所述量子点光致转换层4和所述防护玻璃8垂直。
所述薄膜晶体管2还包括设置在所述基板1上的栅极21、层叠在所述栅极21上的栅极绝缘层22、有源层23、绝缘遮蔽层24以及源漏极25。所述第一保护层11设置在所述源漏极25上且所述第一保护层11优选为树脂层，从而实现保护所述薄膜晶体管2各层的作用。所述第一电极5设置在所述树脂层上并与所述源漏极25电性连接。如图1所示的所述薄膜晶体管2例如为底栅(BG)TFT结构。
请一并参照图2所示，为本发明第二具体实施例示意图。本实施例与上述实施例差异在于所述薄膜晶体管2’例如为双栅(DG)TFT结构。具体而言，所述薄膜晶体管2’还包括设置在所述基板1上的遮蔽层21’、层叠在所述遮蔽层21’的缓冲层22’、有源层23’、栅极绝缘层24’、栅极25’、层间绝缘层26’以及源漏极27。所述第一保护层11设置于所述层间绝缘层24’上且以氧化硅(SiOx)作为钝化层，从而实现保护所述薄膜晶体管2’各层的作用。所述第一电极3设置在所述钝化层上并与所述源漏极25’电性连接。
在第一和第二实施例中，所述第一电极5上还设置有空白层14 (图1)或像素限定层14 (图2)。所述空白层14或所述像素限定层14邻接所述WOLED电致发光功能层6。
本发明还提供一种显示装置，包括设置在所述基板1另一侧面的偏光层9(polarizing layer)，及如上述实施例的所述底发射白光有机发光二极管(WOLED)显示面板。所述偏光层9能够实现高亮度、高对比度的特性。有关显示装置的相关结构，请参上述实施例所述，在此不再赘述。
请一并参照图3所示，为本发明底发射白光有机发光二极管(WOLED)显示面板的制作方法的方块图。如图所示，本发明还提供底发射白光有机发光二极管(WOLED)显示面板的制作方法，包括以下步骤：S10、提供基板1；S20、在基板1上制作形成所述薄膜晶体管2、2’，以及在所述薄膜晶体管2、2’上形成第一保护层11；S30、在所述第一保护层11上形成WOLED彩膜层3(WOLED-CF)，所述WOLED彩膜层3依次形成红绿蓝白(RGBW)像素并在所述WOLED彩膜层3上形成第二保护层12；S40、在所述第二保护层12上形成量子点光致转换层4(QD-PL conversion layer)，所述量子点光致转换层4包括对应所述红绿(RG)像素填充的量子点红绿(QD-R&G)发光材料，在所述量子点光致转换层4上形成树脂层或平坦层13；S50、在所述树脂层或平坦层13上形成第一电极5，并在所述第一电极5上定义出红绿蓝白(RGBW)像素区域；S60、在所述第一电极5上形成WOLED电致发光功能层6并对应所述量子点光致转换层4设置；及S70、在所述WOLED电致发光功能层6上形成第二电极7，其中通过所述量子点光致转换层4的所述量子点红绿(QD-R&G)发光材料将所述WOLED电致发光功能层6的蓝光或黄光转换成红光和绿光，从而提升所述红光和所述绿光的亮度，并降低显示面板的功耗。
在步骤S60后，在所述第一电极5上还形成有空白层14或像素限定层14。所述空白层14或所述像素限定层14邻接所述WOLED电致发光功能层6。在步骤S60中，所述WOLED电致发光功能层6包含蓝光+黄光、蓝光+红光+黄光、蓝光+红光+黄光+绿光或蓝光+红光+绿光光色中任一组合。所述WOLED电致发光功能层6能够包含2叠层、3叠层或多叠层结构，且为正置或倒置结构，视需要而改变。
在步骤S70中，第二电极7的材料例如Ag，且厚度为100-200奈米(nm)。所述第二电极5在可见光区域中具有良好的光透过性。
在步骤S40中，所述量子点光致转换层4通过喷墨打印(ink-jet printing)、喷嘴印刷(nozzle printing)或转移成型(transfer)制程工艺制成。所述量子点光致转换层4还将量子点红绿(QD-R&G)发光材料(图略)填充在相应的红绿(RG)像素区域中，所述量子点红绿发光材料则不填充于蓝白(BW)像素区域中，即对应所述蓝白(BW)像素区域的所述量子点红绿发光材料为空白(blank)。本实施例的量子点光致转换层4优选为量子点增强薄膜(QD-EF，Quantum Dot Enhancement Film)，且厚度为10-200奈米(nm)。
在步骤S70后，还包括盖设在所述第二电极7上方的防护玻璃8(CG)以及贴合并封装所述基板1和所述防护玻璃8的封装材料10(encapsulation material)。所述封装材料10通过阻塞封装(Dam package)、阻塞填入封装(Dam&Fill package)、熔块封装(Frit package)、面密封封装(Face-seal package)或薄膜封装(TFE)等工艺将所述基板1和所述防护玻璃8进行贴合和封装。
在步骤S20的一实施例中(图1)，所述薄膜晶体管2制备方式包括在基板1上依次沉积Al/Mo金属层，经由曝光、显影、刻蚀、剥膜(stripe)等工艺对金属层进行图案化，以形成栅极21。在栅极21上沉积SiOX作为栅极21的栅极绝缘层22(insulating gate layer)。栅极绝缘层22上沉积IGZO层 (氧化铟镓锌，Indium Gallium Zinc Oxide)，经由曝光、显影、刻蚀、剥膜等工艺对IGZO层进行图案化，形成有源层23。在有源层23之上沉积SiOX，经由曝光、显影、刻蚀、剥膜等工艺对SiOX进行图案化，形成绝缘遮蔽层24并对有源层23进行保护。在绝缘遮蔽层24上依次沉积Mo/Al/Mo金属层，经由曝光、显影、刻蚀、剥膜等工艺对Mo/Al/Mo金属层进行图案化，形成源漏极25。在源漏极25上涂布树脂，再经由曝光、显影等工艺对树脂进行图案化，形成树脂层的第一保护层11并对各层起到钝化保护作用。
在步骤S20的另一实施例(图2)中，在基板1上依次沉积Mo金属层，经由曝光、显影、刻蚀、剥膜等工艺对Mo金属层进行图案化，形成遮蔽层15(shielding layer)。在遮蔽层15上沉积SiOX作为缓冲层16。在缓冲层16上沉积IGZO，经由曝光、显影、刻蚀、剥膜等工艺对IGZO层进行图案化，形成有源层21’。在有源层21’之上沉积SiOX，形成栅极绝缘层22’并对有源层21’进行保护。在栅极绝缘层22’上依次沉积Mo/Al/Mo金属层，经由曝光、显影、刻蚀、剥膜等工艺对Mo/Al/Mo金属层进行图案化，形成栅极23’。在栅极23’上沉积SiOX为层间绝缘层24’，再经由曝光、显影、刻蚀、剥膜等工艺对层间绝缘层24’和缓冲层16进行图案化。在层间绝缘层24’上沉积Mo/Al/Mo金属层，再经由曝光、显影、刻蚀、剥膜等工艺对金属层进行图案化，形成源漏极25’以及电容。在源漏极25’上沉积SiOX作为第一保护层11(即钝化层)，再经由曝光、显影、刻蚀、剥膜等工艺对钝化层进行图案化，以对源漏极25’进行保护。
因此，本发明通过量子点光致转换层4能够将WOLED电致发光功能层5中短波长部分的蓝光利用量子点发光材料的光致发光特性转换成红光或绿光，以增加显示面板对WOLED电致发光功能层5的能量利用效率，同时提高显示面板的色域表现，并降低显示面板的功耗。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种底发射白光有机发光二极管(WOLED)显示面板，包括:
    基板；
    薄膜晶体管，设置在所述基板上，在所述薄膜晶体管上设置第一保护层以保护所述薄膜晶体管内结构；
       WOLED彩膜层(WOLED-CF)，设置在所述第一保护层上，所述WOLED彩膜层依次设置红绿蓝白(RGBW)像素并在所述WOLED彩膜层上设置第二保护层；
    量子点光致转换层，设置在所述第二保护层上，所述量子点光致转换层包括对应所述红绿(RG)像素设置的量子点红绿(QD-R&G)发光材料，在所述量子点光致转换层上设置树脂层或平坦层；
    第一电极，设置在所述树脂层或所述平坦层上，并在所述第一电极上定义出红绿蓝白(RGBW)像素区域；
       WOLED电致发光功能层，设置在所述第一电极上并对应所述量子点光致转换层设置；及
    第二电极，设置在所述WOLED电致发光功能层上，其中通过所述量子点光致转换层的所述量子点红绿(QD-R&G)发光材料将所述WOLED电致发光功能层的蓝光或黄光转换成红光和绿光，从而提升所述红色像素和所述绿色像素的亮度。
  2. 如权利要求1所述的底发射白光有机发光二极管(WOLED)显示面板，其中所述量子点红绿(QD-R&G)发光材料对应所述WOLED彩膜层的所述红绿(RG)像素设置，而所述WOLED彩膜层的所述蓝白(BW)像素对应所述量子点光致转换层为空白，其中所述量子点光致转换层为量子点增强薄膜(QD-EF)。
  3. 如权利要求1所述的底发射白光有机发光二极管(WOLED)显示面板，其中所述WOLED电致发光功能层包含蓝光+黄光、蓝光+红光+黄光、蓝光+红光+黄光+绿光或蓝光+红光+绿光光色中任一组合，所述WOLED电致发光功能层包含2叠层或3叠层结构，且为正置或倒置结构。
  4. 如权利要求1所述的底发射白光有机发光二极管(WOLED)显示面板，其中所述WOLED电致发光功能层包括空穴注入层(HIL: HATCN)、空穴传输层(HTL: NPB)、蓝色发光层(B-EML: FIrpic)、电荷传输层(TPBi)、电荷产生层(BPhen:Li)、空穴产生层(HATCN)、黄光发光层(Y-EML: PO-48)和电荷注入层(Liq)。
  5. 如权利要求1所述的底发射白光有机发光二极管(WOLED)显示面板，其中还包括防护玻璃(CG)及封装材料，所述防护玻璃盖设在所述第二电极上方，所述封装材料贴合并封装所述基板和所述防护玻璃，所述封装材料与所述WOLED电致发光功能层、所述量子点光致转换层和所述防护玻璃垂直，所述薄膜晶体管还包括栅极、层叠在所述栅极上的栅极绝缘层、有源层、绝缘遮蔽层以及源漏极，所述第一保护层设置在所述源漏极上，其中所述第一保护层为树脂材料，及所述薄膜晶体管为底栅(BG)TFT结构。
  6. 如权利要求1所述的底发射白光有机发光二极管(WOLED)显示面板，其中所述薄膜晶体管还包括设置在所述基板上的遮蔽层、缓冲层、有源层、栅极绝缘层、栅极、层间绝缘层以及源漏极，其中所述第一保护层设置于所述层间绝缘层上且以氧化硅(SiOx)作为钝化层，及所述薄膜晶体管为双栅(DG)TFT结构。
  7. 如权利要求1所述的底发射白光有机发光二极管(WOLED)显示面板，其中所述第一电极上还设置有空白层或像素限定层，所述空白层或所述像素限定层邻接所述WOLED电致发光功能层。
  8. 一种显示装置，包括:
    基板；
    薄膜晶体管，设置在所述基板上，在所述薄膜晶体管上设置第一保护层以保护所述薄膜晶体管内结构；
       WOLED彩膜层(WOLED-CF)，设置在所述第一保护层上，所述WOLED彩膜层依次设置红绿蓝白(RGBW)像素并在所述WOLED彩膜层上设置第二保护层；
    量子点光致转换层，设置在所述第二保护层上，所述量子点光致转换层包括对应所述红绿(RG)像素设置的量子点红绿(QD-R&G)发光材料，在所述量子点光致转换层上设置树脂层或平坦层；
    第一电极，设置在所述树脂层或所述平坦层上，并在所述第一电极上定义出红绿蓝白(RGBW)像素区域；
       WOLED电致发光功能层，设置在所述第一电极上并对应所述量子点光致转换层设置；
    第二电极，设置在所述WOLED电致发光功能层上，其中通过所述量子点光致转换层的所述量子点红绿(QD-R&G)发光材料将所述WOLED电致发光功能层的蓝光或黄光转换成红光和绿光，从而提升所述红色像素和所述绿色像素的亮度,及
    偏光层，所述偏光层设置在所述基板的另一侧面上。
  9. 如权利要求8所述的显示装置，其中所述量子点红绿(QD-R&G)发光材料对应所述WOLED彩膜层的所述红绿(RG)像素设置，而所述WOLED彩膜层的所述蓝白(BW)像素对应所述量子点光致转换层为空白，其中所述量子点光致转换层为量子点增强薄膜(QD-EF)。
  10. 如权利要求8所述的显示装置，其中所述WOLED电致发光功能层包含蓝光+黄光、蓝光+红光+黄光、蓝光+红光+黄光+绿光或蓝光+红光+绿光光色中任一组合，所述WOLED电致发光功能层包含2叠层或3叠层结构，且为正置或倒置结构。
  11. 如权利要求8所述的显示装置，其中所述WOLED电致发光功能层包括空穴注入层(HIL: HATCN)、空穴传输层(HTL: NPB)、蓝色发光层(B-EML: FIrpic)、电荷传输层(TPBi)、电荷产生层(BPhen:Li)、空穴产生层(HATCN)、黄光发光层(Y-EML: PO-48)和电荷注入层(Liq)。
  12. 如权利要求8所述的显示装置，还包括防护玻璃(CG)及封装材料，所述防护玻璃盖设在所述第二电极上方，所述封装材料贴合并封装所述基板和所述防护玻璃，所述封装材料与所述WOLED电致发光功能层、所述量子点光致转换层和所述防护玻璃垂直，所述薄膜晶体管还包括栅极、层叠在所述栅极上的栅极绝缘层、有源层、绝缘遮蔽层以及源漏极，所述第一保护层设置在所述源漏极上，其中所述第一保护层为树脂材料，及所述薄膜晶体管为底栅(BG)TFT结构。
  13. 如权利要求8所述的显示装置，其中所述薄膜晶体管还包括设置在所述基板上的遮蔽层、缓冲层、有源层、栅极绝缘层、栅极、层间绝缘层以及源漏极，其中所述第一保护层设置于所述层间绝缘层上且以氧化硅(SiOx)作为钝化层，及所述薄膜晶体管为双栅(DG)TFT结构。
  14. 如权利要求8所述的显示装置，其中所述第一电极上还设置有空白层或像素限定层，所述空白层或所述像素限定层邻接所述WOLED电致发光功能层。
  15. 一种底发射白光有机发光二极管(WOLED)显示面板的制作方法，包括以下步骤：
    S10、提供基板；
    S20、在基板上制作形成所述薄膜晶体管，以及在所述薄膜晶体管上形成第一保护层；
    S30、在所述第一保护层上形成WOLED彩膜层(WOLED-CF)，所述WOLED彩膜层依次形成红绿蓝白(RGBW)像素并在所述WOLED彩膜层上形成第二保护层；
    S40、在所述第二保护层上形成量子点光致转换层(QD-PL conversion layer)，所述量子点光致转换层包括对应所述红绿(RG)像素填充的量子点红绿(QD-R&G)发光材料，在所述量子点光致转换层上形成树脂层或平坦层；
    S50、在所述树脂层或平坦层上形成第一电极，并在所述第一电极上定义出红绿蓝白(RGBW)像素区域；
    S60、在所述第一电极上形成WOLED电致发光功能层并对应所述量子点光致转换层设置；及
    S70、在所述WOLED电致发光功能层上形成第二电极，其中通过所述量子点光致转换层的所述量子点红绿(QD-R&G)发光材料将所述WOLED电致发光功能层的蓝光或黄光转换成红光和绿光，从而提升所述红色像素和所述绿色像素的亮度。
  16. 如权利要求15所述的底发射白光有机发光二极管(WOLED)显示面板的制作方法，其中，在步骤S40中，所述量子点光致转换层通过喷墨打印、喷嘴印刷或转移成型工艺制成，所述量子点光致转换层还将量子点红绿(QD-R&G)发光材料填充在相应的红绿(RG)像素区域中，所述量子点红绿发光材料则不填充于蓝白(BW)像素区域中，所述量子点光致转换层为量子点增强薄膜(QD-EF，且厚度为10-200奈米(nm)。
  17. 如权利要求15所述的底发射白光有机发光二极管(WOLED)显示面板的制作方法，其中，在步骤S60中，所述WOLED电致发光功能层包含蓝光+黄光、蓝光+红光+黄光、蓝光+红光+黄光+绿光或蓝光+红光+绿光光色中任一组合。
  18. 如权利要求15所述的底发射白光有机发光二极管(WOLED)显示面板的制作方法，其中，在步骤S60后，在所述第一电极上还形成有空白层或像素限定层，所述空白层或所述像素限定层邻接所述WOLED电致发光功能层，并定义所述红绿蓝白(RGBW)像素区域。
  19. 如权利要求15所述的底发射白光有机发光二极管(WOLED)显示面板的制作方法，其中，在步骤S30中，包括在所述薄膜晶体管上涂布树脂材料或沉积氧化硅并通过显影、曝光形成图案化，以形成所述第一保护层。
  20. 如权利要求15所述的底发射白光有机发光二极管(WOLED)显示面板的制作方法，其中，在步骤S70后，还包括盖设在所述第二电极上方的防护玻璃(CG)以及贴合并封装所述基板和所述防护玻璃的封装材料，所述封装材料通过阻塞封装、阻塞填入封装、熔块封装、面密封封装或薄膜封装。
PCT/CN2019/080870 2019-02-27 2019-04-01 底发射白光有机发光二极管(woled)及其制作方法、显示装置 Ceased WO2020172945A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910144112.7A CN109873085B (zh) 2019-02-27 2019-02-27 底发射白光有机发光二极管显示面板及其制作方法、显示装置
CN201910144112.7 2019-02-27

Publications (1)

Publication Number Publication Date
WO2020172945A1 true WO2020172945A1 (zh) 2020-09-03

Family

ID=66919360

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/080870 Ceased WO2020172945A1 (zh) 2019-02-27 2019-04-01 底发射白光有机发光二极管(woled)及其制作方法、显示装置

Country Status (2)

Country Link
CN (1) CN109873085B (zh)
WO (1) WO2020172945A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115458566A (zh) * 2022-09-19 2022-12-09 京东方科技集团股份有限公司 显示面板、显示装置及显示面板的制作方法
CN115768173A (zh) * 2022-11-04 2023-03-07 云谷（固安）科技有限公司 显示面板及其制备方法、显示装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021012165A1 (zh) * 2019-07-22 2021-01-28 咸阳彩虹光电科技有限公司 一种薄膜封装结构、oled显示面板及显示器
CN111048687A (zh) * 2019-11-20 2020-04-21 Tcl华星光电技术有限公司 封装结构及显示装置
CN113270459B (zh) * 2021-05-14 2023-04-28 长沙惠科光电有限公司 背面发光的有机发光显示面板及其制造方法和显示装置
CN113270458B (zh) * 2021-05-14 2023-04-25 长沙惠科光电有限公司 正面发光的有机发光显示面板及其制造方法和显示装置
EP4465356A4 (en) * 2022-06-30 2025-04-23 Boe Technology Group Co., Ltd. Display substrate and display apparatus
CN115951525B (zh) * 2023-03-02 2023-05-26 惠科股份有限公司 显示面板及显示装置
CN117406321B (zh) * 2023-10-20 2025-06-17 江苏先科半导体新材料有限公司 基于彩色光刻胶的彩色滤光片以及woled显示器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201187A (zh) * 2014-08-18 2014-12-10 京东方科技集团股份有限公司 一种oled显示装置
US20170131594A1 (en) * 2015-11-11 2017-05-11 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
CN107910347A (zh) * 2017-10-18 2018-04-13 深圳市华星光电半导体显示技术有限公司 一种显示器件及oled显示面板
CN108987451A (zh) * 2018-08-01 2018-12-11 京东方科技集团股份有限公司 显示面板及其控制方法和显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104201187A (zh) * 2014-08-18 2014-12-10 京东方科技集团股份有限公司 一种oled显示装置
US20170131594A1 (en) * 2015-11-11 2017-05-11 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
CN107910347A (zh) * 2017-10-18 2018-04-13 深圳市华星光电半导体显示技术有限公司 一种显示器件及oled显示面板
CN108987451A (zh) * 2018-08-01 2018-12-11 京东方科技集团股份有限公司 显示面板及其控制方法和显示装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115458566A (zh) * 2022-09-19 2022-12-09 京东方科技集团股份有限公司 显示面板、显示装置及显示面板的制作方法
CN115768173A (zh) * 2022-11-04 2023-03-07 云谷（固安）科技有限公司 显示面板及其制备方法、显示装置

Also Published As

Publication number Publication date
CN109873085B (zh) 2020-11-10
CN109873085A (zh) 2019-06-11

Similar Documents

Publication Publication Date Title
CN109873085B (zh) 底发射白光有机发光二极管显示面板及其制作方法、显示装置
CN115884633B (zh) 显示面板及显示面板制备方法
CN103456764B (zh) Oled阵列基板及其制造方法、显示装置
KR101454752B1 (ko) 유기발광다이오드표시장치 및 그 제조 방법
KR101429725B1 (ko) 유기전계발광표시장치 및 이의 제조방법
KR101058109B1 (ko) 유기 발광 디스플레이 장치
KR102093628B1 (ko) 유기전계 발광소자 및 이의 제조 방법
KR102478491B1 (ko) 유기발광다이오드 표시장치 및 그의 제조 방법
US20090051283A1 (en) Led device having improved contrast
US20090051284A1 (en) Led device having improved light output
CN109768068A (zh) 顶发射白光有机发光二极管(woled)及其制作方法、显示装置
TWI283549B (en) Organic electroluminescent display device with improved color saturation and method of fabricating the same
JP2007067416A (ja) フルカラー有機ｅｌ表示装置及びその製造方法
WO2020252899A1 (zh) Oled 显示面板及制备方法
CN110752310B (zh) 一种柔性显示面板及其制造方法以及柔性显示终端
CN113707827B (zh) 显示面板及其制作方法、显示装置
KR102583813B1 (ko) 디스플레이 장치
WO2018152934A1 (zh) 一种oled显示器件、其制备方法及oled显示器
CN104576694A (zh) Oled显示装置及其制造方法
WO2020211153A1 (zh) 双面白光有机发光二极管显示装置及其制造方法
CN104518004B (zh) Oled显示装置及其制造方法
WO2020232911A1 (zh) 电致发光显示装置
KR20090026871A (ko) 유기 발광 장치 및 그 제조 방법
WO2020211155A1 (zh) 双面白光有机发光二极管显示装置及其制造方法
CN110610963A (zh) 子像素结构、有机发光二极管显示屏及其制造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19917474

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19917474

Country of ref document: EP

Kind code of ref document: A1