WO2020168674A1 - 一种改善选通管器件性能的操作方法 - Google Patents

一种改善选通管器件性能的操作方法 Download PDF

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Publication number
WO2020168674A1
WO2020168674A1 PCT/CN2019/096066 CN2019096066W WO2020168674A1 WO 2020168674 A1 WO2020168674 A1 WO 2020168674A1 CN 2019096066 W CN2019096066 W CN 2019096066W WO 2020168674 A1 WO2020168674 A1 WO 2020168674A1
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state resistance
strobe device
current
operating voltage
limit current
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French (fr)
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缪向水
林琪
童浩
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0038—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/15—Current-voltage curve
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode

Definitions

  • the invention belongs to the technical field of memory operation, and more specifically, relates to an operation method for improving the performance of a strobe device.
  • a 3D crosspoint memory has an effective cell area of 4F 2 /n, where F is the feature size and n is the number of three-dimensional stacking layers of the memory. It is currently the memory with the largest effective storage density.
  • Next-generation memories including phase change memories, resistive random access memories, magnetic memories, etc., generally adopt a three-dimensional cross-dot matrix structure.
  • the memory cell is connected with the memory cell by the strobe tube device at both ends, and the strobe tube device and the memory cell are stacked vertically without occupying additional area, and has the ability to expand in three dimensions, which greatly improves the storage density.
  • the strobe device can effectively suppress leakage current, reduce power consumption, avoid reading and writing errors, and expand the maximum array size that can be achieved.
  • the gate tube When operating the three-dimensional cross-lattice memory cell, first turn on the gate tube in the selected memory cell, the gate tube is reduced to a low resistance state, and most of the operating voltage falls on the memory cell, and then read the memory cell or Write operation, close the strobe after the operation is complete.
  • the life span of the strobe tube in the memory is very high, which needs to be higher than the life of the memory cell.
  • the gating tube device containing active metal is very easy to form a stable conductive path and fail during the cycle, so that the device stays in a low resistance state, and the stability and life of the device operation are difficult to improve.
  • the purpose of the present invention is to solve the technical problems of poor stability and short life span of the prior art strobe device.
  • an embodiment of the present invention provides an operating method for improving the performance of a strobe device.
  • the method includes the following steps:
  • Step S1 Determine the DC operating voltage and limit current of the gating tube device containing active metal
  • Step S2 Apply a certain operating voltage and limit current to the strobe device, and make the strobe device circulate under direct current until the off-state resistance decreases;
  • Step S3. Continue to apply the determined operating voltage and limit current to the strobe device, so that the strobe device is cycled under direct current until the off-state resistance is reduced to a minimum;
  • Step S4 Continue to apply the determined operating voltage and limit current to the strobe device, so that the strobe device is cycled under direct current until the off-state resistance increases;
  • Step S5. Continue to apply the determined operating voltage and limit current to the strobe device, and allow the strobe device to cycle under DC until the off-state resistance rises to the maximum value;
  • Step S6 Adjust the operating voltage and limit current, and perform DC operation or pulse operation on the strobe tube.
  • the structure of the gate tube device containing active metal is: a first metal electrode layer, a switch layer, a second metal electrode layer; at least one of the first metal electrode layer, the second metal electrode layer or the switch layer contains active metal.
  • the active metal is one or more of Ag, Cu, Co, Ni, and Sn.
  • step S1 a DC test is used to determine a minimum voltage that can turn on the strobe device, and the operating voltage is set to be 0.3V to 1V greater than the minimum voltage; the DC test is used to determine the strobe tube
  • the maximum limit current and the minimum limit current for the switching phenomenon of the device are set to be 1 to 3 orders of magnitude lower than the maximum limit current and higher than the minimum limit current.
  • step S2 the basis for determining that the off-state resistance has decreased is that the off-state resistance of the strobe device is reduced by more than one order of magnitude.
  • step S3 the basis for judging that the off-state resistance is reduced to the minimum value is that the off-state resistance will not be lower than the off-state resistance during the operations before and after this.
  • step S4 the basis for determining that the off-state resistance has increased is that the off-state resistance of the strobe device has increased by more than one order of magnitude.
  • step S5 the basis for judging that the off-state resistance increases to the maximum value is: the off-state resistance will not be higher than the off-state resistance during the previous operation, and the off-state resistance during the subsequent operations It is at most 0.5 orders of magnitude higher than this off-state resistance.
  • step S6 is specifically as follows: determine the minimum voltage and current that the strobe device can switch stably; according to the actual needs of the operation, apply a suitable voltage or current to the device that at least satisfies the stabilization switch of the strobe device, Perform DC operation or pulse operation on the device.
  • an embodiment of the present invention provides a computer-readable storage medium with a computer program stored on the computer-readable storage medium, and when the computer program is executed by a processor, the operation method described in the first aspect is implemented.
  • the present invention aims at the two-terminal gating tube device containing active metal, by allowing the gating tube device to experience the failure of the off-state resistance reduction under the DC cycle, and then the off-state resistance increase, and finally return to the normal state with the highest off-state resistance Afterwards, the strobe tube is operated, which effectively improves the operation stability, has better DC cycle characteristics, and greatly improves the cycle life of the device.
  • the required operating voltage of the device is close to the actual turn-on voltage of the device, and no additional large voltage is needed, which reduces power consumption and simplifies the peripheral circuit design or operation complexity of the device.
  • FIG. 1 is a flowchart of an operation method for improving the performance of a gate tube device according to an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the structure of a gating tube device containing active metal provided by an embodiment of the present invention
  • FIG. 3 is a schematic diagram of an off-state resistance reduction provided by an embodiment of the present invention.
  • FIG. 4 is a schematic diagram of an increase in off-state resistance according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of adjusting the operating voltage and limiting the current to an appropriate value according to an embodiment of the present invention.
  • an operating method for improving the performance of a strobe device includes the following steps:
  • Step S1 determining the DC operating voltage and limiting current of the gating tube device containing active metal
  • Step S2 applying a certain operating voltage and limiting current to the strobe device, so that the strobe device is cycled under direct current until the off-state resistance decreases;
  • Step S3 continue to apply the determined operating voltage and limit current to the strobe device, so that the strobe device is cycled under direct current until the off-state resistance is reduced to a minimum;
  • Step S4 continue to apply the determined operating voltage and limit current to the strobe device, so that the strobe device is cycled under direct current until the off-state resistance increases;
  • Step S5 continue to apply the determined operating voltage and limit current to the strobe device, and allow the strobe device to cycle under direct current until the off-state resistance rises to the maximum value;
  • Step S6 adjusting the operating voltage and limiting current, and performing DC operation or pulse operation on the strobe tube.
  • Step S1 determining the DC operating voltage and limiting current of the gate tube device containing active metal.
  • the structure of the gate tube device containing active metal is, in order, a first metal electrode layer, a switch layer, a second metal electrode layer, and at least one of the first metal electrode layer, the second metal electrode layer or the switch layer includes Active metal, the active metal is one or more of Ag, Cu, Co, Ni, and Sn.
  • a minimum voltage that can turn on the strobe device is determined, and its operating voltage is set to be 0.3V-1V larger than the minimum voltage.
  • the limit current and the minimum limit current of the switching phenomenon of the strobe device are determined, and the limit current is set to be 1 to 3 orders of magnitude lower than the maximum limit current and higher than the minimum limit current.
  • the judgment basis for the occurrence of switching phenomenon is: the device can automatically return to the high-impedance off state after the voltage is removed.
  • Step S2 applying a certain operating voltage and limiting current to the strobe device, so that the strobe device is cycled under direct current until the off-state resistance decreases.
  • the strobe tube is equivalent to a switch, and the off-state resistance refers to the resistance when the strobe tube is off. As shown in FIG. 3, the judgment basis for the decrease of the off-state resistance is: the off-state resistance of the strobe device is reduced by more than one order of magnitude.
  • Step S3 continue to apply the determined operating voltage and limit current to the strobe device, so that the strobe device is cycled under direct current until the off-state resistance is reduced to a minimum value.
  • the off-state resistance can be increased or decreased until the off-state resistance is reduced to a minimum value.
  • the judgment basis for reducing the off-state resistance to the minimum value is that the off-state resistance will not be lower than this off-state resistance during the operation before and after this.
  • Step S4 continue to apply the determined operating voltage and limit the current to the strobe device, so that the strobe device is cycled under direct current until the off-state resistance increases.
  • the basis for judging that the off-state resistance has increased is that the off-state resistance of the strobe device has increased by more than one order of magnitude.
  • Step S5 continue to apply the determined operating voltage and limit current to the strobe device, and allow the strobe device to cycle under direct current until the off-state resistance rises to the maximum value.
  • the off-state resistance can be increased or decreased until the off-state resistance rises to the maximum value.
  • the basis for judging that the off-state resistance increases to the maximum value is: the off-state resistance will not be higher than this off-state resistance during the previous operation, and the off-state resistance will be higher than this off-state resistance at most during the subsequent operation. 0.5 orders of magnitude.
  • Step S6 adjusting the operating voltage and limiting current, and performing DC operation or pulse operation on the strobe tube.
  • the steps of adjusting the operating voltage and limiting the current are: determining the minimum voltage and current that the strobe device can switch stably. As shown in FIG. 5, according to actual needs of the operation, a suitable voltage or current that at least satisfies the stabilizing switching of the gate tube is applied to the device, and the device is subjected to a DC operation (DC operation) or a pulsed operation (AC pulsed operation).
  • DC operation DC operation
  • AC pulsed operation a pulsed operation

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)
  • Power Conversion In General (AREA)
  • Semiconductor Memories (AREA)
  • Dc-Dc Converters (AREA)

Abstract

本发明公开了一种改善选通管器件性能的操作方法，包括：确定选通管器件的直流操作电压和限制电流；施加操作电压和限制电流到选通管器件上，使选通管器件在直流下循环，直到出现关态电阻降低；继续施加操作电压和限制电流到选通管器件上，使选通管器件在直流下循环，直到关态电阻降低到最小值；继续施加操作电压和限制电流到选通管器件上，使选通管器件在直流下循环，直到出现关态电阻升高；继续施加操作电压和限制电流到选通管器件上，让选通管器件在直流下循环，直到关态电阻升高到最大值；调整操作电压和限制电流，对选通管进行直流操作或脉冲操作，从而有效提高操作稳定性，具有更好的直流循环特性，大大改善了器件的循环寿命。

Description

一种改善选通管器件性能的操作方法 【技术领域】
本发明属于存储器操作技术领域，更具体地，涉及一种改善选通管器件性能的操作方法。
【背景技术】
三维交叉点阵存储器(3D crosspoint memory)，其有效单元面积为4F 2/n，其中，F为特征尺寸，n为存储器三维堆叠层数，是目前有效存储密度最大的存储器。下一代存储器，包括相变存储器、阻变存储器、磁存储器等，普遍采用三维交叉点阵结构。三维交叉点阵存储器中，存储器单元采用两端的选通管器件与记忆单元连接，选通管器件与记忆单元垂直堆叠，不用占据额外面积，且具备三维方向拓展的能力，大大提高了存储密度。
选通管器件作为三维交叉点阵存储器中的选址器件，可以有效抑制漏电流，降低功耗，避免读写错误，扩大可以实现的最大阵列尺寸。在对三维交叉点阵存储器单元进行操作时，首先打开选中存储器单元中的选通管，选通管降低到低阻状态，操作电压大部分降落在记忆单元上，然后对记忆单元进行读操作或者写操作，操作完成后关闭选通管。由于每一次对存储单元进行读操作或者写操作都需要打开选通管，并且选通管需要保持开启状态承受读写电流，存储器中选通管的寿命要求非常高，需要高于存储单元的寿命。
现有技术中，含有活性金属的选通管器件在循环过程中极容易形成稳定的导电路径而失效，使器件停留在低电阻状态，器件操作的稳定性和寿命难以提高。
【发明内容】
针对现有技术的缺陷，本发明的目的在于解决现有技术选通管器件稳定性差、寿命短的技术问题。
为实现上述目的，第一方面，本发明实施例提供了一种改善选通管器件性能的操作方法，该方法包括以下步骤：
步骤S1.确定含有活性金属的选通管器件的直流操作电压和限制电流；
步骤S2.施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到出现关态电阻降低；
步骤S3.继续施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到关态电阻降低到最小值；
步骤S4.继续施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到出现关态电阻升高；
步骤S5.继续施加确定的操作电压和限制电流到选通管器件上，让该选通管器件在直流下循环，直到关态电阻升高到最大值；
步骤S6.调整操作电压和限制电流，对选通管进行直流操作或脉冲操作。
具体地，所述含有活性金属的选通管器件结构依次为：第一金属电极层、开关层、第二金属电极层；第一金属电极层、第二金属电极层或开关层至少一个包含活性金属。
具体地，所述活性金属为Ag、Cu、Co、Ni、Sn中的一种或几种。
具体地，步骤S1中，通过直流测试，确定一个可以使所述选通管器件开启的最小电压，其操作电压设置为比最小电压大0.3V～1V；通过直流测试，确定所述选通管器件发生开关现象的最大限制电流和最小限制电流，其限制电流设置为低于最大限制电流1到3个数量级、且高于最小限制电流。
具体地，步骤S2中，关态电阻出现降低的判断依据是：所述选通管器件的关态电阻降低1个数量级以上。
具体地，步骤S3中，关态电阻降低到最小值的判断依据是：在此之前和之后的操作过程中关态电阻都不会低于这个关态电阻。
具体地，步骤S4中，关态电阻出现升高的判断依据是：所述选通管器件的关态电阻升高1个数量级以上。
具体地，步骤S5中，关态电阻升高到最大值的判断依据是：在此之前操作过程中关态电阻都不会高于这个关态电阻，以及在此之后的操作过程中关态电阻最多高于这个关态电阻0.5个数量级。
具体地，步骤S6具体如下：确定所述选通管器件可以稳定开关的最小电压和电流；根据操作实际需要，施加合适的、且至少满足选通管可以稳定开关的电压或电流到器件上，对器件进行直流操作或者脉冲操作。
第二方面，本发明实施例提供了一种计算机可读存储介质，该计算机可读存储介质上存储有计算机程序，该计算机程序被处理器执行时实现上述第一方面所述的操作方法。
总体而言，通过本发明所构思的以上技术方案与现有技术相比，具有以下有益效果：
本发明针对含有活性金属的两端选通管器件，通过让选通管器件在直流循环下经历关态电阻降低的失效，又经历关态电阻升高，最终恢复到关态电阻最高的正常状态后，对选通管进行操作，有效提高操作稳定性，具有更好的直流循环特性，大大改善了器件的循环寿命。此外，直流循环过程中，器件所需要的操作电压与器件实际开启电压相近，不需要额外的大电压，降低功耗，简化器件的外围电路设计或操作复杂程度。
【附图说明】
图1为本发明实施例提供的一种改善选通管器件性能的操作方法流程图；
图2为本发明实施例提供的含有活性金属的选通管器件结构示意图；
图3为本发明实施例提供的出现关态电阻降低示意图；
图4为本发明实施例提供的出现关态电阻升高示意图；
图5为本发明实施例提供的调整操作电压和限制电流到合适值示意图。
【具体实施方式】
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
如图1所示，一种改善选通管器件性能的操作方法，该方法包括以下步骤：
步骤S1，确定含有活性金属的选通管器件的直流操作电压和限制电流；
步骤S2，施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到出现关态电阻降低；
步骤S3，继续施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到关态电阻降低到最小值；
步骤S4，继续施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到出现关态电阻升高；
步骤S5，继续施加确定的操作电压和限制电流到选通管器件上，让该选通管器件在直流下循环，直到关态电阻升高到最大值；
步骤S6，调整操作电压和限制电流，对选通管进行直流操作或脉冲操作。
步骤S1，确定含有活性金属的选通管器件的直流操作电压和限制电流。
如图2所示，含有活性金属的选通管器件结构依次为，第一金属电极层、开关层、第二金属电极层，第一金属电极层、第二金属电极层或开关层至少一个包含活性金属，活性金属为Ag、Cu、Co、Ni、Sn中的一种或几种。
通过直流测试，确定一个可以使所述选通管器件开启的最小电压，其操作电压设置为比最小电压大0.3V～1V。
通过直流测试，确定所述选通管器件发生开关现象的最大限制电流和最小限制电流，其限制电流设置为低于最大限制电流1到3个数量级、且高于最小限制电流。
发生开关现象的判断依据是：电压撤去后器件可以自动恢复到高阻关闭状态。
步骤S2，施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到出现关态电阻降低。
选通管相当于开关，关态电阻指选通管关闭状态下的电阻。如图3所示，关态电阻出现降低的判断依据是：所述选通管器件的关态电阻降低1个数量级以上。
步骤S3，继续施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到关态电阻降低到最小值。
从步骤S2到步骤S3，关态电阻可以升高或者降低，直到关态电阻降低到最小值。关态电阻降低到最小值的判断依据是：在此之前和之后的操作过程中关态电阻都不会低于这个关态电阻。
步骤S4，继续施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到出现关态电阻升高。
如图4所示，关态电阻出现升高的判断依据是：所述选通管器件的关态电阻升高1个数量级以上。
步骤S5，继续施加确定的操作电压和限制电流到选通管器件上，让该选通管器件在直流下循环，直到关态电阻升高到最大值。
从步骤S4到步骤S5，关态电阻可以升高或者降低，直到关态电阻升高到最大值。关态电阻升高到最大值的判断依据是：在此之前操作过程中关态电阻都不会高于这个关态电阻，以及在此之后的操作过程中关态电阻最 多高于这个关态电阻0.5个数量级。
步骤S6，调整操作电压和限制电流，对选通管进行直流操作或脉冲操作。
调整操作电压和限制电流的步骤为：确定所述选通管器件可以稳定开关的最小电压和电流。如图5所示，根据操作实际需要，施加合适的、且至少满足选通管可以稳定开关的电压或电流到器件上，对器件进行直流操作(DC operation)或者脉冲操作(AC pulsed operation)。
以上，仅为本申请较佳的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应该以权利要求的保护范围为准。

Claims (10)

  1. 一种改善选通管器件性能的操作方法，其特征在于，该方法包括以下步骤：
    步骤S1.确定含有活性金属的选通管器件的直流操作电压和限制电流；
    步骤S2.施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到出现关态电阻降低；
    步骤S3.继续施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到关态电阻降低到最小值；
    步骤S4.继续施加确定的操作电压和限制电流到选通管器件上，使该选通管器件在直流下循环，直到出现关态电阻升高；
    步骤S5.继续施加确定的操作电压和限制电流到选通管器件上，让该选通管器件在直流下循环，直到关态电阻升高到最大值；
    步骤S6.调整操作电压和限制电流，对选通管进行直流操作或脉冲操作。
  2. 如权利要求1所述的操作方法，其特征在于，所述含有活性金属的选通管器件结构依次为：第一金属电极层、开关层、第二金属电极层；第一金属电极层、第二金属电极层或开关层至少一个包含活性金属。
  3. 如权利要求1所述的操作方法，其特征在于，所述活性金属为Ag、Cu、Co、Ni、Sn中的一种或几种。
  4. 如权利要求1所述的操作方法，其特征在于，步骤S1中，通过直流测试，确定一个可以使所述选通管器件开启的最小电压，其操作电压设置为比最小电压大0.3V～1V；通过直流测试，确定所述选通管器件发生开关现象的最大限制电流和最小限制电流，其限制电流设置为低于最大限制电流1到3个数量级、且高于最小限制电流。
  5. 如权利要求1所述的操作方法，其特征在于，步骤S2中，关态电阻 出现降低的判断依据是：所述选通管器件的关态电阻降低1个数量级以上。
  6. 如权利要求1所述的操作方法，其特征在于，步骤S3中，关态电阻降低到最小值的判断依据是：在此之前和之后的操作过程中关态电阻都不会低于这个关态电阻。
  7. 如权利要求1所述的操作方法，其特征在于，步骤S4中，关态电阻出现升高的判断依据是：所述选通管器件的关态电阻升高1个数量级以上。
  8. 如权利要求1所述的操作方法，其特征在于，步骤S5中，关态电阻升高到最大值的判断依据是：在此之前操作过程中关态电阻都不会高于这个关态电阻，以及在此之后的操作过程中关态电阻最多高于这个关态电阻0.5个数量级。
  9. 如权利要求1所述的操作方法，其特征在于，步骤S6具体如下：确定所述选通管器件可以稳定开关的最小电压和电流；根据操作实际需要，施加合适的、且至少满足选通管可以稳定开关的电压或电流到器件上，对器件进行直流操作或者脉冲操作。
  10. 一种计算机可读存储介质，其特征在于，所述计算机可读存储介质上存储有计算机程序，所述计算机程序被处理器执行时实现如权利要求1至9任一项所述的操作方法。
PCT/CN2019/096066 2019-02-19 2019-07-16 一种改善选通管器件性能的操作方法 Ceased WO2020168674A1 (zh)

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