WO2020168594A1 - 一种 amoled 显示装置及其制备方法 - Google Patents

一种 amoled 显示装置及其制备方法 Download PDF

Info

Publication number
WO2020168594A1
WO2020168594A1 PCT/CN2019/077270 CN2019077270W WO2020168594A1 WO 2020168594 A1 WO2020168594 A1 WO 2020168594A1 CN 2019077270 W CN2019077270 W CN 2019077270W WO 2020168594 A1 WO2020168594 A1 WO 2020168594A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
chromium
shielding layer
signal line
containing light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/077270
Other languages
English (en)
French (fr)
Inventor
蔡振飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of WO2020168594A1 publication Critical patent/WO2020168594A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the invention relates to the field of display technology, in particular to an AMOLED display device and a preparation method thereof.
  • liquid crystal display devices such as LCD TVs, smart phones, computers, tablet computers and other modern information equipment.
  • LCD liquid crystal display devices
  • Most of the liquid crystal display devices currently on the market are backlit liquid crystal display devices, which include a back plate (BP), a liquid crystal display panel (Panel), and a back light unit (BLU).
  • a liquid crystal display panel is usually composed of a Color Filter (CF) substrate, a Thin Film Transistor (TFT) array substrate, and a Liquid Crystal Layer (LCL) disposed between the two substrates. constitute.
  • a polarizer is attached to the side of the backplane away from the TFT array substrate.
  • the liquid crystal display panel controls the orientation of the liquid crystal molecules through the electric field, changes the polarization state of light, and realizes the penetration and blocking of the light path through the polarizer, so as to achieve the purpose of displaying the picture.
  • the backlight module usually uses Light Emitting Diode (LED for short) as the backlight source.
  • OLED Organic Light Emitting Diode
  • AMOLED(Active-Matrix Organic Light Emitting Diode (active matrix organic light-emitting diode) display device is a display device that uses current to drive OLED devices to emit light to form a picture.
  • FIG. 1 is a schematic cross-sectional view of a conventional bottom-emitting AMOLED display device.
  • the TFT array substrate 11 of the AMOLED display device includes a glass substrate 111, and a reflective cathode 112, a light emitting (EL) layer 113, and a color resist layer (R/G/B) which are sequentially stacked on the glass substrate 111 along the light emitting direction.
  • EL light emitting
  • R/G/B color resist layer
  • the polarizer 12 is attached to the side of the TFT array substrate 11 away from the flat layer 116 along the light emitting direction.
  • the polarizer 12 adopts a combination of a layer of linear polarizer 121 and a layer of quarter wave circular polarizer 122, and its main function is to block the reflection of ambient light.
  • the natural light 191 is filtered into linear polarized light 192 in a single direction; then when the linearly polarized light 192 passes through the circular polarizer 122 of the quarter wave plate, it becomes incident with a phase shift of 45 degrees.
  • Circularly polarized light 193 incident circularly polarized light 193 irradiates the signal line 115, or irradiates the reflective cathode 112 in the pixel opening area (the area corresponding to each color resist of the color resist layer 114) and is reflected back to form the reflected light 194; the reflected light 194 passes through again
  • the circular polarizer 122 of the quarter-wave plate changes the phase by 90 degrees and becomes the reflected circular polarized light 195; at this time, the reflected circular polarized light 195 cannot pass through the linear polarizer 121, so that the ambient light cannot reach the human eye, thus preventing ambient light
  • this polarizer also affects the transmittance of light emitted by the OLED device of the TFT array substrate 11, and is expensive. Since the light emitted by the OLED device also needs to pass through the circular polarizer 122 and the linear polarizer 121, the current transmittance of the polarizer can only reach 40% ⁇ 50%. Therefore, the screen brightness of the AMOLED display device is reduced, and the OLED device emits light. Efficiency is greatly affected.
  • the purpose of the present invention is to provide an AMOLED display device and a preparation method thereof, which can realize that no polarizer is required, the luminous efficiency of the OLED device is improved, and the screen brightness of the display device is improved.
  • the present invention provides an AMOLED display device, including a TFT array substrate; the TFT array substrate includes a signal line and a chromium-containing light-shielding layer sequentially arranged along the light-emitting direction, and the chromium-containing light-shielding layer and the signal The lines are arranged oppositely, and the signal lines are electrically connected to the chromium-containing light-shielding layer through through holes.
  • the width of the signal lines is smaller than the width of the chromium-containing light-shielding layer; the TFT array substrate is far away from the light-emitting direction.
  • a refractive film is attached to one side of the chromium-containing light-shielding layer.
  • the present invention also provides an AMOLED display device, including a TFT array substrate; the TFT array substrate includes a signal line and a chromium-containing light-shielding layer arranged in sequence along the light-emitting direction, the chromium-containing light-shielding layer and the The signal lines are arranged oppositely, and the signal lines are electrically connected to the chromium-containing light shielding layer through through holes.
  • the present invention also provides a method for manufacturing an AMOLED display device, which includes the following steps: (1) Making a signal line of a TFT array substrate, and one of the signal lines away from the signal line along the light emitting direction A through hole is opened on the side through a punching process; (2) A chromium-containing light-shielding layer is made on the side of the signal line where the through hole is opened by deposition photolithography, and the chromium-containing light-shielding layer is opposite to the signal line And the signal line and the chromium-containing light shielding layer are electrically connected through the through hole.
  • a chromium-containing light-shielding layer on the TFT array substrate opposite to the signal line, and electrically connecting the signal line to the chromium-containing light-shielding layer through a punching process, it can absorb the light incident on the chromium-containing light-shielding layer, And because of the double-layer metal wiring design of the signal line and the chromium-containing light-shielding layer, the wiring resistance is reduced.
  • the exit angle of natural light after passing through the refracting film is increased, so that when the refracted light enters the pixel opening area, Most of the reflected light will be absorbed by the chromium-containing light shielding layer at the edge of the pixel opening area opposite to the signal line and the color resistance of the adjacent pixels, so as to filter out the ambient light and make the natural light incident inside the TFT array substrate It is unable to emit light smoothly, and achieves the purpose of preventing reflection, realizing that the reflection of ambient light can be blocked without a polarizer, achieving the purpose of removing the polarizer, saving costs, and improving luminous efficiency and screen brightness.
  • Figure 1 is a schematic cross-sectional view of a conventional bottom-emitting AMOLED display device
  • FIG. 2 is a schematic cross-sectional view of an embodiment of an AMOLED display device of the present invention.
  • Fig. 3 is a schematic flow chart of the manufacturing method of the AMOLED display device of the present invention.
  • the "above” or “below” of the first feature of the second feature may include the first and second features in direct contact, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or it simply means that the level of the first feature is higher than the second feature.
  • the “below”, “below” and “below” the first feature of the second feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the AMOLED display device of the present invention includes a TFT array substrate.
  • the TFT array substrate includes a signal line and a chromium-containing light-shielding layer arranged in sequence along the light-emitting direction; the chromium-containing light-shielding layer on the TFT array substrate is positioned relative to the signal line, and the signal line is electrically connected through a through hole Connect to the chromium-containing shading layer.
  • the present invention rationally optimizes the TFT array substrate manufacturing (Top Gate) process, and uses metallic chromium (Cr) or a chromium-containing alloy as the light-shielding layer material.
  • the chromium metal is a non-ferrous metal that can absorb light.
  • a chromium-containing light-shielding layer is fabricated on the TFT array substrate at a position opposite to the signal lines (including the gate signal line and the source-drain signal line), and the signal line is electrically connected to the chromium-containing light-shielding layer through a punching process. It can absorb light, and because of the double-layer metal wiring design of the signal line and the chromium-containing light shielding layer, the wiring resistance is reduced.
  • the invention also attaches a refracting film to the side of the TFT array substrate away from the chromium-containing light-shielding layer along the light emitting direction.
  • the refracting film is made of a resin material with an increased light refraction angle, so that natural light passes through the refracting film. The emergence angle of the increased, the original polarizer can be removed.
  • the glass substrate of the TFT array substrate can also increase the angle of refraction, combined with the refractive film, when the refracted light enters the pixel opening area of the TFT array substrate, most of the reflected light will be
  • the chromium-containing light-shielding layer at the edge of the pixel opening area opposite to the signal line and the color resistance of adjacent pixels absorb, so as to filter out the ambient light, so that the natural light incident inside the TFT array substrate cannot be smoothly emitted, preventing reflection
  • the purpose; and the light incident on the chromium-containing light-shielding layer can not be emitted because of the light absorption of the chromium-containing light-shielding layer, so it can block the reflection of ambient light without a polarizer, and achieve the purpose of removing the polarizer and save cost
  • the luminous efficiency and screen brightness are improved.
  • FIG. 2 is a schematic cross-sectional view of an embodiment of an AMOLED display device of the present invention.
  • the AMOLED display device includes a TFT array substrate 21.
  • the TFT array substrate 21 includes a glass (Glass) substrate 211, and a reflective cathode 212, a light emitting (EL) layer 213, and a color resist layer (R/ G/B) 214, signal line 215, flat layer 216 and chromium-containing light shielding layer 217, flat layer 216 covers color resist layer 214 and signal line 215, chromium-containing light shielding layer 217 is disposed on flat layer 216 opposite to signal line 215 In this position, the signal line 215 is electrically connected to the chromium-containing light shielding layer 217 through the through hole 218.
  • Glass Glass
  • EL light emitting
  • R/ G/B color resist layer
  • the non-ferrous metal chromium (Cr) or chromium-containing alloy is used as the material of the light-shielding layer, which can absorb light.
  • a chromium-containing light-shielding layer 217 is formed on the TFT array substrate 21 at a position opposite to the signal line 215 (including the gate signal line and the source/drain signal line), and the signal line 215 is moved away from the signal line along the light emitting direction through a punching process
  • a through hole 218 is opened on one side of the 215, and the signal line 215 is electrically connected to the chromium-containing light shielding layer 217 through the through hole 218. This can absorb light so that the incident light cannot be emitted, and because the signal line 215 and the chromium-containing light shielding layer 217 double Layer metal trace design reduces trace resistance.
  • the width of the signal line 215 is smaller than the width of the chromium-containing light shielding layer 217.
  • the signal line 215 is fully covered by the chromium-containing light shielding layer 217, which can ensure that the incident light incident above the signal line 215 and the reflected light reflected to the signal line 215 are absorbed by the chromium-containing light shielding layer 217, making the incident light The ambient light cannot be emitted, which serves the purpose of preventing the reflection of ambient light.
  • the thickness of the chromium-containing light shielding layer 217 may be 100-150 nm.
  • a refraction film 23 is attached to the side of the TFT array substrate 21 far away from the chromium-containing light shielding layer 217 along the light emitting direction to increase the refraction angle of the ambient light.
  • the refraction film 23 is made of a resin material with an increased light refraction angle, which can increase the refraction angle of incident natural light 291.
  • the refraction angle ⁇ 2 is greater than the incident angle ⁇ 1. In this way, when the refracted light 292 enters the pixel opening area, the reflection angle (equal to the refraction angle ⁇ 2) also increases, and most of the reflected light 293 will be chromium-containing at the edge of the pixel opening area opposite to the signal line 215.
  • the light-shielding layer 217 and the color resistance of adjacent pixels absorb, so as to filter out the ambient light, so that the natural light incident on the inside of the TFT array substrate 21 cannot be smoothly emitted, thereby preventing reflection.
  • the light incident on the chromium-containing light-shielding layer 217 cannot be emitted because of the light absorption effect of the chromium-containing light-shielding layer 217, so it can block the reflection of ambient light without a polarizer, so as to achieve the purpose of removing the polarizer and save cost. , Improve luminous efficiency and screen brightness.
  • FIG. 3 is a schematic flow chart of the manufacturing method of the AMOLED display device of the present invention.
  • the preparation method includes the following steps: S31: fabricating a signal line of a TFT array substrate, and opening a through hole on the side of the signal line away from the signal line along the light emission direction through a punching process; S32: using a deposition photolithography method A chromium-containing light-shielding layer is fabricated on the side of the signal line where the through hole is opened, the chromium-containing light-shielding layer is disposed opposite to the signal line, and the signal line and the chromium-containing light-shielding layer pass through the Electrical connection via vias; and S33: attach a refractive film to the side of the TFT array substrate away from the chromium-containing light shielding layer along the light emission direction, and a detailed explanation will be given below.
  • step S31 fabricating the signal line of the TFT array substrate, a through hole is opened on the side of the signal line away from the signal line along the light emitting direction through a punching process, and refer to FIG. 2 together.
  • the specific preparation method can refer to the existing process and will not be repeated here.
  • a flat layer 216 is deposited to cover the color resist layer 214 and the signal line 215; and on the side of the fabricated signal line 215 away from the signal line 215 along the light emission direction, a flat layer 216 is deposited.
  • the hole process opens a through hole 218 on the flat layer 216 for the subsequent signal line 215 to be electrically connected to the chromium-containing light shielding layer 217 through the through hole 218.
  • a chromium-containing light-shielding layer is fabricated on the side of the signal line where the through hole is provided by deposition photolithography, the chromium-containing light-shielding layer is disposed opposite to the signal line, and the signal line is The chromium-containing light-shielding layer is electrically connected through the through hole.
  • the chromium-containing light-shielding layer 217 is formed by deposition photolithography on the side of the signal line 215 where the through hole 218 is opened, and the signal line 215 is electrically connected to the chromium-containing light-shielding layer through the through hole 218 Layer 217.
  • the chromium-containing light shielding layer 217 is formed on the flat layer 216 at a position opposite to the signal line 215.
  • the chromium-containing light-shielding layer 217 made of non-ferrous metal chromium (Cr) or a chromium-containing alloy as the light-shielding material can play a role in absorbing light.
  • the TFT array substrate prepared by the above process can not only absorb light so that the incident light cannot be emitted, but also because of the double-layer metal wiring design of the signal line 215 and the chromium-containing light shielding layer 217, the wiring resistance is reduced.
  • the width of the signal line 215 is smaller than the width of the chromium-containing light shielding layer 217.
  • the signal line 215 is fully covered by the chromium-containing light shielding layer 217, which can ensure that the incident light incident above the signal line 215 and the reflected light reflected to the signal line 215 are absorbed by the chromium-containing light shielding layer 217, making the incident light The ambient light cannot be emitted, which serves the purpose of preventing the reflection of ambient light.
  • the thickness of the chromium-containing light shielding layer 217 is 100-150 nm.
  • step S33 attaching a refractive film on the side of the TFT array substrate away from the chromium-containing light-shielding layer along the light emitting direction, refer to FIG. 2 together.
  • a refraction film 23 is attached to the side of the TFT array substrate 21 away from the chromium-containing light shielding layer 217 along the light exit direction.
  • step S33 is a preferred step.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明揭露一种AMOLED显示装置及其制备方法，可以吸收光线并减小了走线电阻，实现无需偏光片即可阻挡环境光的反射，达到去除偏光片的目的，节约成本的同时，提高发光效率和画面亮度。

Description

一种AMOLED显示装置及其制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种AMOLED显示装置及其制备方法。
 背景技术
随着电子科技以及显示技术的迅猛发展，液晶显示装置(Liquid Crystal Display，LCD)得到了广泛的应用，如：液晶电视、智能手机、计算机、平板电脑等现代化信息设备上。现有市场上的液晶显示装置大部分为背光型液晶显示装置，其包括背板(Back Plate，BP)、液晶显示面板(Panel)及背光模组(Back Light Unit，简称BLU)。液晶显示面板通常是由一彩膜(Color Filter，简称CF)基板、一薄膜晶体管(Thin Film Transistor，简称TFT)阵列基板以及一配置于两基板间的液晶层(Liquid Crystal Layer，简称LCL) 所构成。背板远离TFT阵列基板的一侧贴附有偏光片(Polarizer)。液晶显示面板通过电场对液晶分子的取向进行控制，改变光的偏振状态，并藉由偏光片实现光路的穿透与阻挡，达到显示画面的目的。背光模组通常以发光二极管(Light Emitting Diode，简称LED)作为背光源。
近年来OLED(Organic Light Emitting Diode，有机发光二极管)显示技术的快速发展，推动曲面和柔性显示触控产品迅速进入市场，相关领域技术更新也是日新月异。OLED是指利用有机半导体材料和发光材料在电场驱动下，通过载流子注入和复合导致发光的二极管。AMOLED(Active-Matrix Organic Light Emitting Diode，有源矩阵有机发光二极管)显示装置是采用电流驱动OLED器件发光形成画面的显示器件。
 技术问题
请参考图1，现有底发光的AMOLED显示装置剖面示意图。所述AMOLED显示装置的TFT阵列基板11包括玻璃衬底111，以及沿出光方向依次层叠设置在玻璃衬底111上的反射阴极112、发光(EL)层113、色阻层(R/G/B)114、信号线115，以及覆盖色阻层114和信号线115的平坦层116。偏光片12贴附在TFT阵列基板11的沿出光方向远离平坦层116的一侧。偏光片12采用一层线偏光片121和一层1/4波片的圆偏光片122的组合，其主要作用是阻挡环境光的反射。当环境光穿过线偏光片121后，自然光191被过滤成单一方向的线性偏振光192；之后线性偏振光192经过1/4波片的圆偏光片122时，变为相位偏转45度的入射圆偏光193；入射圆偏光193照射到信号线115，或者照射到像素开口区域(色阻层114各色阻所对应的区域)的反射阴极112后被反射回来形成反射光194；反射光194再次经过1/4波片的圆偏光片122，相位变换90度变为反射圆偏光195；这时的反射圆偏光195无法通过线偏光片121，这样环境光就无法到达人眼，实现了防止环境光被TFT阵列基板11发射到人眼的问题。
但是这种偏光片在过滤环境光的同时，也会影响TFT阵列基板11的OLED器件发出的光的透过率，而且价格昂贵。由于OLED器件发出的光也需要穿过圆偏光片122和线偏光片121，目前偏光片的透过率只能做到40%~50%，AMOLED显示装置的画面亮度因此降低，OLED器件的发光效率受到很大的影响。
 技术解决方案
本发明的目的在于，提供一种AMOLED显示装置及其制备方法，可以实现无需偏光片，提高OLED器件发光效率，提高显示装置的画面亮度。
为实现上述目的，本发明提供了一种AMOLED显示装置，包括TFT阵列基板；所述TFT阵列基板包括沿出光方向依次设置的信号线与含铬遮光层，所述含铬遮光层与所述信号线相对设置，且所述信号线通过通孔电性连接到所述含铬遮光层，所述信号线的宽度小于所述含铬遮光层的宽度；所述TFT阵列基板的沿出光方向远离所述含铬遮光层的一侧贴附有一层折射膜。
为实现上述目的，本发明还提供了一种AMOLED显示装置，包括TFT阵列基板；所述TFT阵列基板包括沿出光方向依次设置的信号线与含铬遮光层，所述含铬遮光层与所述信号线相对设置，且所述信号线通过通孔电性连接到所述含铬遮光层。
为实现上述目的，本发明还提供了一种AMOLED显示装置的制备方法，包括如下步骤：(1)制作TFT阵列基板的信号线，在所述信号线的沿出光方向远离所述信号线的一侧通过打孔工艺开设通孔；(2)通过沉积光刻方式在所述信号线的开设有所述通孔的一侧制作含铬遮光层，所述含铬遮光层与所述信号线相对设置，且所述信号线与所述含铬遮光层通过所述通孔电性连接。
 有益效果
通过在TFT阵列基板上与信号线相对的位置区域制作含铬遮光层，并通过打孔工艺将信号线电性连接到含铬遮光层，这样既可以吸收入射到含铬遮光层上的光线，又因为信号线和含铬遮光层双层金属走线设计，减小了走线电阻。通过进一步在TFT阵列基板的沿出光方向远离远离含铬遮光层的一侧贴附一层折射膜，使自然光经过此折射膜后的出射角度增大，这样当折射光线射入像素开口区域后，绝大部分的反射光线会被像素开口区域边缘的与信号线相对位置的含铬遮光层和相邻像素的色阻吸收，从而达到滤出环境光的作用，使入射到TFT阵列基板内部的自然光无法顺利出射，起到防止反射的目的，实现无需偏光片即可阻挡环境光的反射，达到去除偏光片的目的，节约成本的同时，提高发光效率和画面亮度。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1，现有底发光的AMOLED显示装置剖面示意图；
图2，本发明AMOLED显示装置一实施例的剖面示意图；
图3，本发明AMOLED显示装置制备方法的流程示意图。
 本发明的实施方式
下面详细描述本发明的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。
在本发明中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本发明的不同结构。为了简化本发明的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本发明。此外，本发明可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本发明提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本发明AMOLED显示装置，包括TFT阵列基板，TFT阵列基板包括沿出光方向依次设置的信号线与含铬遮光层；TFT阵列基板上含铬遮光层与信号线相对位置，信号线通过通孔电性连接到含铬遮光层。本发明通过合理优化TFT阵列基板制作(Top Gate)工艺，采用金属铬(Cr)或者含铬合金作为遮光层材料，铬金属是一种有色金属，可以起到吸收光线的作用。通过在TFT阵列基板上与信号线(包括栅极信号线和源漏极信号线)相对的位置区域制作含铬遮光层，通过打孔工艺将信号线电性连接到含铬遮光层，这样既可以吸收光线，又因为信号线和含铬遮光层双层金属走线设计，减小了走线电阻。
本发明还通过在TFT阵列基板的沿出光方向远离远离含铬遮光层的一侧贴附一层折射膜，折射膜由具有增大光线折射角度的树脂材料制成，使自然光经过此折射膜后的出射角度增大，可以实现去除原有偏光片。由于TFT阵列基板的玻璃(Glass)衬底本身也可以起到增大折射角度的作用，结合折射膜，这样当折射光线射入TFT阵列基板的像素开口区域后，绝大部分的反射光线会被像素开口区域边缘的与信号线相对位置的含铬遮光层和相邻像素的色阻吸收，从而达到滤出环境光的作用，使入射到TFT阵列基板内部的自然光无法顺利出射，起到防止反射的目的；而入射到含铬遮光层上的光线又因为含铬遮光层的吸光作用而无法出射，故而可以实现无需偏光片即可阻挡环境光的反射，达到去除偏光片的目的，节约成本的同时，提高发光效率和画面亮度。
请参考图2，本发明AMOLED显示装置一实施例的剖面示意图。所述AMOLED显示装置包括TFT阵列基板21。在本实施例中，TFT阵列基板21包括玻璃(Glass)衬底211，以及沿出光方向依次层叠设置在玻璃衬底211上的反射阴极212、发光(EL)层213、色阻层(R/G/B)214、信号线215、平坦层216以及含铬遮光层217，平坦层216覆盖色阻层214和信号线215，含铬遮光层217设置在平坦层216上与信号线215相对的位置，信号线215通过通孔218电性连接到含铬遮光层217。
采用有色金属铬(Cr)或者含铬合金作为遮光层材料，可以起到吸收光线的作用。通过在TFT阵列基板21上与信号线215(包括栅极信号线和源漏极信号线)相对的位置制作含铬遮光层217，并通过打孔工艺在信号线215的沿出光方向远离信号线215的一侧开设通孔218，通过通孔218将信号线215电性连接到含铬遮光层217，这样既可以吸收光线使入射光线无法出射，又因为信号线215和含铬遮光层217双层金属走线设计，减小了走线电阻。
优选的，信号线215的宽度小于含铬遮光层217的宽度。通过含铬遮光层217对信号线215进行全覆盖，可以确保入射到信号线215上方处的入射光线，以及反射到信号线215处的反射光线，均被含铬遮光层217吸收，使入射的环境光无法出射，起到防止环境光反射的目的。
可选的，含铬遮光层217的厚度可以为100~150nm。
优选的，TFT阵列基板21的沿出光方向远离远离含铬遮光层217的一侧贴附有一层折射膜23，以增大外界环境光的折射角度。折射膜23采用具有增大光线折射角度的树脂材料制成，可以使入射自然光291的折射角度增大，如图中，折射角度θ2大于入射角度θ1。这样当折射光线292射入像素开口区域后的反射角度(与折射角度θ2相等)也随之增大，绝大部分的反射光线293会被像素开口区域边缘的与信号线215相对位置的含铬遮光层217和相邻像素的色阻吸收，从而达到滤出环境光的作用，使入射到TFT阵列基板21内部的自然光无法顺利出射，起到防止反射的目的。而入射到含铬遮光层217上的光线又因为含铬遮光层217的吸光作用而无法出射，故而可以实现无需偏光片即可阻挡环境光的反射，达到去除偏光片的目的，节约成本的同时，提高发光效率和画面亮度。
请参阅图3，本发明AMOLED显示装置制备方法的流程示意图。所述制备方法包括如下步骤：S31：制作TFT阵列基板的信号线，在所述信号线的沿出光方向远离所述信号线的一侧通过打孔工艺开设通孔；S32：通过沉积光刻方式在所述信号线的开设有所述通孔的一侧制作含铬遮光层，所述含铬遮光层与所述信号线相对设置，且所述信号线与所述含铬遮光层通过所述通孔电性连接；以及S33：在所述TFT阵列基板的沿出光方向远离所述含铬遮光层的一侧贴附一层折射膜，以下给出详细解释。
关于步骤S31：制作所述TFT阵列基板的信号线，在所述信号线的沿出光方向远离所述信号线的一侧通过打孔工艺开设通孔，可一并参考图2。具体的，在信号线制程前中，通过提供玻璃(Glass)衬底211，在玻璃衬底211上沿出光方向依次层叠设置TFT阵列基板21的反射阴极212、发光层213以及色阻层214，具体制备方法可参考现有工艺制程，此处不再赘述。在信号线制程中，制作好的信号线215后，沉积平坦层216以覆盖色阻层214和信号线215；并在制作好的信号线215的沿出光方向远离信号线215的一侧通过打孔工艺在平坦层216上开设通孔218，以用于后续信号线215通过通孔218电性连接到含铬遮光层217。
关于步骤S32：通过沉积光刻方式在所述信号线的开设有所述通孔的一侧制作含铬遮光层，所述含铬遮光层与所述信号线相对设置，且所述信号线与所述含铬遮光层通过所述通孔电性连接，可一并参考图2。具体的，在TFT阵列基板制程中，在信号线215的开设有通孔218的一侧，通过沉积光刻方式制作含铬遮光层217，信号线215通过通孔218电性连接到含铬遮光层217。也即，含铬遮光层217制作在平坦层216上的与信号线215相对的位置。采用有色金属铬(Cr)或者含铬合金作为遮光层材料制作的含铬遮光层217，可以起到吸收光线的作用。
通过上述制程制备的TFT阵列基板，既可以吸收光线使入射光线无法出射，又因为信号线215和含铬遮光层217双层金属走线设计，减小了走线电阻。
优选的，信号线215的宽度小于含铬遮光层217的宽度。通过含铬遮光层217对信号线215进行全覆盖，可以确保入射到信号线215上方处的入射光线，以及反射到信号线215处的反射光线，均被含铬遮光层217吸收，使入射的环境光无法出射，起到防止环境光反射的目的。
可选的，含铬遮光层217的厚度为100~150nm。
关于步骤S33：在所述TFT阵列基板的沿出光方向远离所述含铬遮光层的一侧贴附一层折射膜，可一并参考图2。具体的，在完成TFT阵列基板21的制作后，在TFT阵列基板21的沿出光方向远离含铬遮光层217的一侧贴附一层折射膜23，折射膜23采用具有增大光线折射角度的树脂材料制成。通过设置折射膜23，可以增大外界环境光折射角度，使入射自然光291的折射角度增大，这样当折射光线292射入像素开口区域后的反射角度(与折射角度相等)也随之增大，绝大部分的反射光线293会被像素开口区域边缘的与信号线215相对位置的含铬遮光层217和相邻像素的色阻吸收，从而达到滤出环境光的作用，使入射到TFT阵列基板21内部的自然光无法顺利出射，起到防止反射的目的。而入射到含铬遮光层217上的光线又因为含铬遮光层217的吸光作用而无法出射，故而可以实现无需偏光片即可阻挡环境光的反射，达到去除偏光片的目的，节约成本的同时，提高发光效率和画面亮度。其中，步骤S33为优选步骤。
 工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (13)

  1. 一种AMOLED显示装置，包括TFT阵列基板；其中，所述TFT阵列基板包括沿出光方向依次设置的信号线与含铬遮光层，所述含铬遮光层与所述信号线相对设置，且所述信号线通过通孔电性连接到所述含铬遮光层，所述信号线的宽度小于所述含铬遮光层的宽度；所述TFT阵列基板的沿出光方向远离所述含铬遮光层的一侧贴附有一层折射膜。
  2. 如权利要求1所述的装置，其中，所述含铬遮光层的厚度为100~150nm。
  3. 如权利要求1所述的装置，其中，所述折射膜采用具有增大光线折射角度的树脂材料制成。
  4. 一种AMOLED显示装置，包括TFT阵列基板；其中，所述TFT阵列基板包括沿出光方向依次设置的信号线与含铬遮光层，所述含铬遮光层与所述信号线相对设置，且所述信号线通过通孔电性连接到所述含铬遮光层。
  5. 如权利要求4所述的装置，其中，所述信号线的宽度小于所述含铬遮光层的宽度。
  6. 如权利要求4所述的装置，其中，所述含铬遮光层的厚度为100~150nm。
  7. 如权利要求4所述的装置，其中，所述TFT阵列基板的沿出光方向远离所述含铬遮光层的一侧贴附有一层折射膜。
  8. 如权利要求7所述的装置，其中，所述折射膜采用具有增大光线折射角度的树脂材料制成。
  9. 一种AMOLED显示装置的制备方法，其中，包括如下步骤： (1)制作TFT阵列基板的信号线，在所述信号线的沿出光方向远离所述信号线的一侧通过打孔工艺开设通孔； (2)通过沉积光刻方式在所述信号线的开设有所述通孔的一侧制作含铬遮光层，所述含铬遮光层与所述信号线相对设置，且所述信号线与所述含铬遮光层通过所述通孔电性连接。
  10. 如权利要求9所述的方法，其中，所述信号线的宽度小于所述含铬遮光层的宽度。
  11. 如权利要求9所述的方法，其中，所述含铬遮光层的厚度为100~150nm。
  12. 如权利要求9所述的方法，其中，所述方法进一步包括： (3)在所述TFT阵列基板的沿出光方向远离所述含铬遮光层的一侧贴附一层折射膜。
  13. 如权利要求12所述的方法，其中，所述折射膜采用具有增大光线折射角度的树脂材料制成。
PCT/CN2019/077270 2019-02-21 2019-03-07 一种 amoled 显示装置及其制备方法 Ceased WO2020168594A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910130348.5A CN109860256B (zh) 2019-02-21 2019-02-21 一种amoled显示装置及其制备方法
CN201910130348.5 2019-02-21

Publications (1)

Publication Number Publication Date
WO2020168594A1 true WO2020168594A1 (zh) 2020-08-27

Family

ID=66898505

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/077270 Ceased WO2020168594A1 (zh) 2019-02-21 2019-03-07 一种 amoled 显示装置及其制备方法

Country Status (2)

Country Link
CN (1) CN109860256B (zh)
WO (1) WO2020168594A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7098061B2 (ja) 2019-02-07 2022-07-08 ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィ ハーフブリッジコンバータのパワー半導体を保護するシステム及び方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111864107A (zh) * 2020-07-10 2020-10-30 武汉华星光电半导体显示技术有限公司 Tft阵列基板、显示装置和tft阵列基板的制备方法
CN112750961A (zh) * 2020-11-25 2021-05-04 乐金显示光电科技(中国)有限公司 一种有机发光显示屏及其制备方法
CN112786742B (zh) * 2021-01-05 2022-02-22 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241319A (zh) * 2013-06-18 2014-12-24 三星显示有限公司 有机发光二极管显示器
CN104517992A (zh) * 2013-09-30 2015-04-15 索尼公司 显示单元和电子装置
CN109119453A (zh) * 2018-09-25 2019-01-01 武汉天马微电子有限公司 显示面板及其制作方法和显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1343206B1 (en) * 2002-03-07 2016-10-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus
CN103681693B (zh) * 2013-12-05 2017-05-24 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241319A (zh) * 2013-06-18 2014-12-24 三星显示有限公司 有机发光二极管显示器
CN104517992A (zh) * 2013-09-30 2015-04-15 索尼公司 显示单元和电子装置
CN109119453A (zh) * 2018-09-25 2019-01-01 武汉天马微电子有限公司 显示面板及其制作方法和显示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7098061B2 (ja) 2019-02-07 2022-07-08 ミツビシ・エレクトリック・アールアンドディー・センター・ヨーロッパ・ビーヴィ ハーフブリッジコンバータのパワー半導体を保護するシステム及び方法

Also Published As

Publication number Publication date
CN109860256A (zh) 2019-06-07
CN109860256B (zh) 2020-08-11

Similar Documents

Publication Publication Date Title
US12364103B2 (en) Display device
CN109119453B (zh) 显示面板及其制作方法和显示装置
US20220376209A1 (en) Display substrate and preparation method therefor, and display apparatus
US7973888B2 (en) Liquid crystal display device having minimized outer region
CN101859507B (zh) 显示装置
WO2020168594A1 (zh) 一种 amoled 显示装置及其制备方法
US10748941B2 (en) Light valve structure, manufacturing method therefor, operating method therefor, array substrate and electronic device
US8325290B2 (en) Dual liquid crystal display device
US20090316075A1 (en) Dual liquid crystal display device
KR20150005053A (ko) 어레이 기판 및 이를 포함하는 액정표시패널
US7557879B2 (en) Transflective liquid crystal display, flat panel display device, and electronic apparatus
KR20170052801A (ko) 표시 장치 및 그 제조 방법
US20160238900A1 (en) Array substrate and liquid crystal display panel using same
CN106990603B (zh) 显示面板及其应用的显示装置
KR20260036161A (ko) 디스플레이 모듈, 그 제조방법 및 디스플레이 장치
CN118102773A (zh) 阵列基板、显示面板和显示装置
US20160238899A1 (en) Array substrate and liquid crystal display panel using same
US20170160588A1 (en) Reflective tft array panel, method of fabricating the same and lcd
US20240255816A1 (en) Display apparatus
TWI386716B (zh) 液晶顯示面板及其應用
WO2019127679A1 (zh) 阵列基板、显示设备及阵列基板的制作方法
WO2025256515A1 (zh) 显示装置
WO2026051676A1 (zh) 阵列基板、显示面板及显示装置
KR20110076435A (ko) 이중 요철구조의 반사층을 가진 액정표시소자
KR20080001513A (ko) 반사투과형 액정표시소자 및 그 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19916117

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19916117

Country of ref document: EP

Kind code of ref document: A1