WO2020166814A1 - Led pixel package comprising active pixel ic, and manufacturing method therefor - Google Patents

Led pixel package comprising active pixel ic, and manufacturing method therefor Download PDF

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Publication number
WO2020166814A1
WO2020166814A1 PCT/KR2019/018504 KR2019018504W WO2020166814A1 WO 2020166814 A1 WO2020166814 A1 WO 2020166814A1 KR 2019018504 W KR2019018504 W KR 2019018504W WO 2020166814 A1 WO2020166814 A1 WO 2020166814A1
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Prior art keywords
led
pixel
active pixel
manufacturing
chip
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PCT/KR2019/018504
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French (fr)
Korean (ko)
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김진혁
김종선
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(주)실리콘인사이드
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Priority to CN201980003581.5A priority Critical patent/CN111819687A/en
Publication of WO2020166814A1 publication Critical patent/WO2020166814A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to an LED pixel package including an active pixel IC having excellent display contrast and excellent black display, and a method of manufacturing the same.
  • LEDs Due to the recent trend of miniaturization of optical imaging devices, LEDs are receiving a lot of attention as a light source of optical imaging devices for image realization. Accordingly, the development of an optimized LED package for small optical imaging devices has become an issue.
  • the surface color of such an LED package is generally made of a transparent material having a transmittance of 70% or more to increase luminance and reflectance. As the conventional LED package is applied to an electric signboard and display device, the surface of the LED package is exposed to the outside. This happens frequently.
  • a plurality of LED packages are arranged on a substrate in a horizontal and vertical direction to manufacture an LED package module, and after mounting such an LED package module on a case, a plurality of LED packages are combined It is also used as a display device.
  • the contrast ratio represents the ratio between the brightness at the darkest and the brightest, and the larger the black and white ratio is, the better the product, and the higher the contrast ratio, the more distinctive the screen is and display more accurate colors.
  • a sun shade that acts as a shade to block light is provided on the upper part of the LED package, or light-traps deliver light-traps inclined in a protruding shape to confine the light on both sides of the LED package. )
  • the contrast ratio can be improved to some extent by this method, but there is a problem that it cannot be significantly improved.
  • LED is a representative light emitting device that is most often selected to realize high brightness, high contrast ratio, and good color reproducibility.
  • the currently most used driving method for driving LEDs is a passive matrix.
  • the passive driving method directly controls the LEDs configured in each pixel, and the driving circuit must be connected and driven for each LED. Therefore, as the pixel becomes smaller, the driving circuit must be configured in a small space, and power consumption is also increased.
  • An object of the present invention for solving the problems of the prior art described above is to provide an LED pixel package and a manufacturing method having excellent display contrast and excellent black or black display.
  • the present invention has another object to provide an LED pixel package and a manufacturing method that improves light extraction efficiency and light output.
  • Another object is to provide a manufacturing method.
  • the present invention has been devised to solve the problems of the prior art described above, comprising: (a) flip chip bonding at least one LED chip and at least one active pixel IC on a substrate; (b) molding an upper portion of the substrate with black resin to cover the entire LED chip and the active pixel IC; (c) grinding an upper area of the area molded with the black resin so that the upper surface of the LED chip is exposed; (d) cutting the LED chip and the active pixel IC to form a pair, respectively, to provide a method of manufacturing an LED pixel package including an active pixel IC.
  • the present invention includes the steps of (c1) mounting a solder ball on the lower surface of the substrate after the step (c); It is preferable to further include.
  • the black resin is preferably any one of a polyphtalamide (PPA) resin mixed with carbon black, an epoxy mold compound (EMC) resin, or black silicon.
  • PPA polyphtalamide
  • EMC epoxy mold compound
  • the step (a) is preferably flip-chip bonding on the substrate so that the LED chip and the active pixel IC form a pair and form an array of (M x N).
  • the step (b) includes: (b1) installing a mold to cover the upper portion of the LED chip and the active pixel IC and each side portion of the substrate; (b2) injecting black resin through at least one molding injection hole formed on a side surface of the mold; And (b3) removing the mold after curing the black resin.
  • the thickness of the active pixel IC is thinner than that of the LED chip.
  • the step (a) is preferably flip-chip bonded so that the active pixel IC is formed lower than the height of the flip-chip bonded LED chip.
  • the step (c) is preferably ground so that the upper surface of the active pixel IC is not exposed from the black resin molding area.
  • step (d) after forming (M+1) x (N+1) cutting lines on the substrate, it is preferable to cut along the cutting lines.
  • the present invention provides an LED pixel package including an active pixel IC formed by the LED pixel package manufacturing method.
  • the size of the LED pixel package when the LED pixel package is implemented, the size of the LED pixel package must be excessively configured, and thus, there is an effect of solving the problem that the utility is inferior in terms of physical size and cost to implement an active matrix.
  • FIG. 1 is a top view and a cross-sectional view of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
  • FIG. 2 is a block diagram of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
  • FIG 3 is an internal layout view and a rear view of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
  • FIG. 4 is an exemplary view showing a state of flip chip bonding an LED chip and an active pixel IC on a substrate according to an embodiment of the present invention.
  • FIG. 5 is an exemplary view showing a mold installed on a substrate according to an embodiment of the present invention, and then removed after molding.
  • FIG. 6 is an exemplary view showing a state of grinding molding on a substrate according to an embodiment of the present invention.
  • FIG. 7 is an exemplary view showing a state in which a solder ball is mounted under a substrate according to an embodiment of the present invention.
  • FIG 8 is an exemplary view showing a state of forming a cutting line on a substrate and cutting along the cutting line according to an embodiment of the present invention.
  • FIG. 9 is a flow chart showing each process of manufacturing one LED pixel package according to an embodiment of the present invention.
  • the present invention provides a step of flip chip bonding at least one LED chip and at least one active pixel IC on a substrate, and the upper portion of the substrate is made of a black resin to cover the entire LED chip and the active pixel IC. molding with black resin), grinding the upper area of the area molded with the black resin so that the upper surface of the LED chip is exposed, cutting the LED chip and the active pixel IC to form a pair, respectively It relates to a method of manufacturing an LED pixel package including an active pixel IC comprising the step.
  • FIG. 1 is a top view and a cross-sectional view of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
  • the present invention has been devised to provide an LED pixel package having excellent display contrast and excellent black or black display. To this end, it was molded with black resin for perfect implementation of a black display, and an LED pixel package including an active pixel IC to solve the problem of ineffectiveness in terms of physical size and cost to implement an active matrix. was configured.
  • the upper surface of the substrate is covered with a black resin molding area 50 except for the upper portion of the LED chip 10, which will be described later, this is the light irradiated from the LED chip 10 This is to prevent influencing the operation of the active pixel IC 20 by flowing into the LED pixel package.
  • the thickness of the active pixel IC 20 is formed thinner than the thickness of the LED chip 10, or the active pixel IC 20 is flip-chip bonded LED chip 10
  • the upper surface of the black resin molding area 50 is removed, the upper part of the LED chip 10 is easily exposed while the active pixel IC 20 is formed to be lower than the height of the black resin molding area 50.
  • FIG. 2 is a configuration diagram of an LED pixel package including an active pixel IC according to an embodiment of the present invention
  • FIG. 3 is an internal layout view and a rear view of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
  • LED displays In the LED display, the smaller the distance between individual LEDs, the denser the number of pixels, and as the brightness of individual LEDs increases, the clarity of the entire display increases and the picture quality is improved. LED displays can be implemented more efficiently in terms of physical size and cost.
  • pins for power supply, data input, grounding, etc. must be configured in the LED pixel package.
  • the red LED (21), green LED (22), blue LED (23) included in the LED chip (10) Switch control pins for each enable and emission operation must also be configured in the LED pixel package.
  • the present invention has been devised to provide an LED pixel package that can be implemented as an active matrix while minimizing physical size and reducing manufacturing cost.
  • the output signal and the signal output are determined according to the voltage level of the signal input, the LED emission signal is generated by the output signal and the signal output, and the emission timing of each LED and the data input by the LED emission signal As the luminance of each LED is determined, the number of pins required for an LED pixel package is reduced, and at the same time, an LED display is implemented with an active matrix.
  • the red LED 310, the green LED 311, and the blue LED 312 are arranged one by one in the LED chip 10, and emission luminance and emission timing are controlled according to the level of the signal input and the level of the data input.
  • the present invention is an LED current generator (not shown) for driving each of the red LED 21, the green LED 22, and the blue LED 23, and finally each emission switch (not shown) for emitting LED. ) May be further provided.
  • the red enable switch, green enable switch, blue enable switch, and emission switch (red emission switch, green emission switch, and blue emission switch are turned on at the same time).
  • the present invention controls the current flowing through each LED according to the voltage level of the signal input applied through the signal pin,
  • the LED pixel package is implemented with only pins.
  • the four pins are included in the active pixel IC 20, a power pin 27 for inputting power to the LED pixel package, a signal pin 26 for inputting a signal to the LED pixel package, It may be composed of a data pin 25 for inputting data to the LED pixel package and a ground pin 24 for grounding the LED pixel package.
  • a total of four pins including the power pin 27, the signal pin 26, the data pin 25, and the ground pin 24, are configured.
  • Signal input and data input can be performed by separating rows and columns.
  • a power pad 27', a signal pad 26', a data pad 27', and a ground pad 24' may be formed.
  • the power pad 27', the signal pad 26', the data pad 27', and the ground pad 24' may be formed through solder ball mounting.
  • the driving circuit for driving is very simplified, which is very advantageous in reducing the pixel size and pixel spacing, and power consumption can be reduced at the same time.
  • 4 to 8 are exemplary diagrams illustrating each process of manufacturing an LED pixel package according to a flow.
  • the present invention comprises the steps of: (a) flip chip bonding at least one LED chip and at least one active pixel IC on a substrate, (b) a substrate to cover the entire LED chip and the active pixel IC. Molding the upper part of the black resin, (c) grinding the upper area of the area molded with the black resin so that the upper surface of the LED chip is exposed, (c1) the lower surface of the substrate Mounting a solder ball on the device, (d) cutting the LED chip and the active pixel IC to form a pair, respectively.
  • FIG. 4 is an exemplary view showing flip chip bonding of an LED chip and an active pixel IC on a substrate according to an embodiment of the present invention.
  • At least one LED chip 10 and at least one active pixel IC 20 are bonded to each other on a substrate 30 by flip chip bonding.
  • the LED chip 10 may be formed including an R (red) LED, a G (green) LED, and a B (blue) LED, as shown in (a) of FIG. 4.
  • the LED chip 10 may be applied not only to RGB LED but also to ⁇ LED or OLED.
  • the plurality of LED chips 10 and the plurality of active pixel ICs 20 are arranged on the substrate 30, but each LED chip 10 and each active pixel IC 20 are arranged to form a pair. do.
  • the plurality of LED chips 10 and the plurality of active pixel ICs 20 are flip-chip bonded on the substrate 30 to form a horizontal/vertical (M x N) arrangement.
  • the thickness of the active pixel IC 20 is thinner than that of the LED chip 10.
  • the height of the pad bump 60 of the LED chip 10 is formed higher, resulting in It may be possible to form the upper surface of the flip-chip-bonded LED chip 10 higher than the upper surface of the flip-chip-bonded active pixel IC 20.
  • the flip chip bonding may be performed by a known flip chip bonding method.
  • FIG. 5 is an exemplary view showing a mold installed on a substrate according to an embodiment of the present invention, and then removed after molding.
  • step (b) molding the upper portion of the substrate 30 with black resin to cover the entire LED chip 10 and the active pixel IC 20 .
  • the step (b) includes the steps of (b1) installing the mold 70 to cover the upper portions of the LED chip 10 and the active pixel IC 20 and each side portion of the substrate 30, (b2) Injecting black resin through at least one molding injection hole 71 formed on the side of the mold 70 and (b3) removing the mold 70 after curing the black resin It can be formed in a step.
  • FIG. 5A a cross-sectional view of a mold 70 having a plurality of molding injection ports 71 on the side surface covering the upper portion of the substrate 30 is shown.
  • Figure 5 (b) is a cross-sectional view of the molding injection hole 71 in Figure 5 (a) cut to the side, the mold 70 covering the top and each side of the substrate 30 After installation, black resin is injected through the molding injection port 70 and cured, and the mold 70 is removed.
  • black resin any one resin selected from polyphtalamide (PPA) resin mixed with carbon black, epoxy mold compound (EMC) resin, or black silicon may be used.
  • PPA polyphtalamide
  • EMC epoxy mold compound
  • black silicon any one resin selected from polyphtalamide (PPA) resin mixed with carbon black, epoxy mold compound (EMC) resin, or black silicon may be used.
  • the black resin is a member having low light reflectance even if it is not a PPA (polyphtalamide) resin mixed with carbon black, black EMC (Epoxy Mold Compound) resin, and black silicon. /If it is a black resin, any type of resin will be applicable.
  • the black resin molding region 50 is formed of a member having a low light reflectance, and thus, performs a function of absorbing light in order to increase the contrast between turning on and off the LED chip 10.
  • the active pixel IC 20 has a structure that is buried in the black resin molding region 50, so the active pixel IC 20 By excluding the inflow of light into the furnace and excluding the influence of the active pixel IC 20, there is no problem in the function of the LED chip 10, but a high contrast between the LED chip 10 is turned on and off is realized. do.
  • the present invention can improve light extraction efficiency because the light irradiated from the LED chip 10 is blocked from flowing into the active pixel IC 20 and the LED pixel package, and is irradiated outside the LED pixel package. As a result, the light output can be improved.
  • FIG. 6 is an exemplary view showing a state of grinding molding on a substrate according to an embodiment of the present invention.
  • step (c) grinding the upper area of the area 50 molded with the black resin so that the upper surface of the LED chip 10 is exposed.
  • step (c) grinding so that the upper surface of the LED chip 10 is exposed, but the upper surface of the active pixel IC 20 is not exposed from the black resin molding area 50. It can be called a grinding process.
  • the thickness of the active pixel IC 20 may be formed to be thinner than the thickness of the LED chip 10. There will be.
  • the active pixel IC 20 is similar to or thicker than the thickness of the LED chip 10
  • the active pixel IC 20 and the pad bump 60 of the LED chip 10 It is also possible to adjust the height so that the top surface of the flip-chip bonded LED chip 10 is higher than the top surface of the flip-chip bonded active pixel IC 20.
  • the upper surface of the flip-chip bonded LED chip 10 and the upper surface of the active pixel IC chip 20 have a height difference of 100 ⁇ m to 1,000 ⁇ m.
  • the thickness of the LED chip 10 may be formed to be thicker than the thickness of the active pixel IC chip 20 within a range of 100 ⁇ m to 1,000 ⁇ m.
  • the step (c) is described as grinding to expose the upper surface of the LED chip 10, but the present invention is not limited thereto, and the area molded with the black resin according to the needs of the invention ( It will also be possible to precisely remove the upper area of 50) through laser beam irradiation.
  • FIG. 7 is an exemplary view showing a state in which a solder ball is mounted under a substrate according to an embodiment of the present invention.
  • step (c) a step of mounting the solder ball 40 on the lower surface of the substrate 30 is performed.
  • the material of the solder ball 40 may be a known material, and when cutting the LED pixel package, four solder balls are formed under the substrate 30 where the pair of LED chips 10 and the active pixel IC 20 are located. It is desirable to go through the solder ball mounting process to be positioned.
  • the four solder balls 40 located under one LED pixel package function as a ground pad 27', a data pad 25', a signal pad 26', and a power pad 27', respectively, as described above. Can be done.
  • FIG 8 is an exemplary view showing a state of forming a cutting line on a substrate and cutting along the cutting line according to an embodiment of the present invention.
  • the LED chip 10 and the active pixel IC 20 are cut to form a pair, one each.
  • the cutting may be performed through a known cutting tool, a cutting device, or a small press.
  • a plurality of LED chips 10 and a plurality of active pixel ICs 20 located on the substrate 30 are collectively cut to form a pair, thereby manufacturing a large amount of LED pixel packages within a short time. It becomes possible.
  • FIG. 9 is a flow chart showing each process of manufacturing one LED pixel package according to an embodiment of the present invention.
  • the present invention has the advantage of being able to quickly manufacture a large amount of LED pixel packages within a short time with a relatively simple manufacturing process, thereby simplifying the manufacturing process and derive side effects of reducing manufacturing cost.
  • the present invention has an excellent black/black display, excellent display contrast, and an LED pixel that improves light extraction efficiency and light output by molding the upper and side portions of the LED pixel package excluding the upper surface of the LED chip with black resin. There is an advantage of being able to provide a package.

Abstract

The present invention relates to: an LED pixel package comprising an active pixel IC, the LED pixel package having excellent display contrast and excellent black display; and a manufacturing method therefor. More particularly, the present invention provides a method for manufacturing an LED pixel package comprising an active pixel IC, the method comprising the steps of: (a) flip chip bonding, on a substrate, at least one LED chip and at least one active pixel IC; (b) molding the upper part of the substrate with a black resin so as to cover the entire LED chip and active pixel IC; (c) grinding the upper part of a region molded with the black resin so that the upper surface of the LED chip is exposed; and (d) cutting the LED chip and the active pixel IC so as to form a pair of each.

Description

능동화소 IC를 포함하는 LED 픽셀 패키지 및 그 제조방법LED pixel package including active pixel IC and manufacturing method thereof
본 발명은 디스플레이 콘트라스트(contrast)가 우수하고 검정색 디스플레이가 우수한 능동화소 IC를 포함하는 LED 픽셀 패키지 및 그 제조방법에 관한 것이다. The present invention relates to an LED pixel package including an active pixel IC having excellent display contrast and excellent black display, and a method of manufacturing the same.
최근 광학 영상기기의 소형화 추세로 인해, 영상구현을 위한 광학 영상기기의 광원으로써 LED가 많은 주목을 받고 있으며, 특히 최근 LED의 조도 및 파워가 크게 향상되어 단일 LED패키지를 사용한 광학 영상구현이 가능해짐에 따라 소형 광학 영상기기 등에 최적화된 LED 패키지의 개발이 이슈가 되고 있다.Due to the recent trend of miniaturization of optical imaging devices, LEDs are receiving a lot of attention as a light source of optical imaging devices for image realization. Accordingly, the development of an optimized LED package for small optical imaging devices has become an issue.
이와 같은 LED 패키지의 표면 색상은 휘도 및 반사율을 높이기 위해 일반적으로 70% 이상의 투과율을 갖는 투명소재로 이루어지는데, 종래의 LED패키지가 전광판 및 디스플레이기기 등에 적용됨에 따라, LED 패키지의 표면이 외부로 노출되는 경우가 빈번하게 발생하게 된다. The surface color of such an LED package is generally made of a transparent material having a transmittance of 70% or more to increase luminance and reflectance. As the conventional LED package is applied to an electric signboard and display device, the surface of the LED package is exposed to the outside. This happens frequently.
그리고, LED 패키지를 디스플레이장치로 적용하는 경우, 다수의 LED 패키지를 가로, 세로 방향으로 기판에 배열시켜 LED 패키지 모듈을 제조하고, 이와 같은 LED 패키지 모듈을 케이스에 장착한 후, 다수를 조합하여 LED 디스플레이장치로 사용하기도 한다. And, when applying the LED package as a display device, a plurality of LED packages are arranged on a substrate in a horizontal and vertical direction to manufacture an LED package module, and after mounting such an LED package module on a case, a plurality of LED packages are combined It is also used as a display device.
이러한 LED 디스플레이장치는, 실외 또는 실내에서 주위의 조명 또는 햇살이 비추는 상태에서 주로 사용하기 때문에, LED 패키지 모듈 또는 이를 포함하는 LED디스플레이장치의 명암비가 낮은 경우, 선명도가 현저하게 저하되어 깨끗한 문자 및 영상을 볼 수 없는 단점을 지닌다.Since such an LED display device is mainly used outdoors or indoors in a state in which surrounding lighting or sunlight is shining, when the contrast ratio of the LED package module or the LED display device including the same is low, the sharpness is remarkably deteriorated, resulting in clear text and images. It has the disadvantage of not being able to see.
상기 명암비(contrast ratio)는, 가장 어두울 때와 가장 밝을 때의 밝기간의 비율을 나타내는 것으로서, 흑백의 비율이 클수록 좋은 제품이고, 명암비가 클수록 화면의 구분이 뚜렷하고 보다 정확한 색상을 표시할 수 있다.The contrast ratio represents the ratio between the brightness at the darkest and the brightest, and the larger the black and white ratio is, the better the product, and the higher the contrast ratio, the more distinctive the screen is and display more accurate colors.
이를 개선하기 위해 LED 패키지의 상측 부분에 빛을 차단하는 그늘 역할을 하는 썬쉐이드(sun shade)를 구비하거나 또는 LED 패키지 양측에서, 빛을 가두어 주도록 돌기 형상으로 경사지게 형성된 라이트 트랩 딜리버(light-traps deliver)를 구비하여 명암비를 개선하기도 하나, 이와 같은 방법으로 명암비를 어느 정도 개선할 수는 있지만, 대폭적으로 개선시키지 못하는 문제점이 있었다. To improve this, a sun shade that acts as a shade to block light is provided on the upper part of the LED package, or light-traps deliver light-traps inclined in a protruding shape to confine the light on both sides of the LED package. ) To improve the contrast ratio, but the contrast ratio can be improved to some extent by this method, but there is a problem that it cannot be significantly improved.
한편, 최근 상업용 실외 및 실내 전광판의 구현에 있어, 그 디스플레이 화질을 개선하기 위해서 화소의 크기는 작아지는 반면, 화면의 크기는 더 커지는 추세로 발전하고 있다. On the other hand, in the recent implementation of commercial outdoor and indoor electric signboards, in order to improve the display quality, the size of the pixel is reduced, while the size of the screen is becoming larger.
특히, 본 응용에 있어, 고휘도, 고명암비, 좋은 색재현성을 구현하기 위해 가장 많이 선택되는 발광소자로 LED가 대표적이다. 이 경우, LED 구동에 있어 현재 가장 많이 사용되는 구동 방식은 패시브 매트릭스(Passive Matrix)이다. 수동구동방식은 각각의 화소에 구성된 LED를 직접 제어 하는 방식으로 그 구동 회로가 LED 마다 연결되어 구동되어야 한다. 따라서, 화소가 작아짐에 따라 그 구동회로도 작은 공간 안에 구성되어야 하며, 전력 소모도 커지는 치명적인 단점을 가지고 있다. In particular, in this application, LED is a representative light emitting device that is most often selected to realize high brightness, high contrast ratio, and good color reproducibility. In this case, the currently most used driving method for driving LEDs is a passive matrix. The passive driving method directly controls the LEDs configured in each pixel, and the driving circuit must be connected and driven for each LED. Therefore, as the pixel becomes smaller, the driving circuit must be configured in a small space, and power consumption is also increased.
이에, 최근 LED를 이용한 디스플레이에도 액티브 매트릭스(Active Matrix)를 채택해야 하는 필요성이 대두되고 있다. 이 경우, 화소에 구성된 LED를 직접 제어하는 방식이 아닌, 능동화소 IC를 이용하여 가로축과 세로축을 제어함으로써 제어핀이 패시브 매트릭스 방식에 대비하여 화소 사이즈 및 화소 간격을 감소시킬 필요성이 대두되고 있다. Accordingly, there is a need to adopt an active matrix in a display using an LED recently. In this case, there is a need for a control pin to reduce the pixel size and pixel spacing compared to the passive matrix method by controlling the horizontal axis and the vertical axis using an active pixel IC instead of a method of directly controlling the LED configured in the pixel.
전술한 종래기술의 문제점을 해결하기 위한 본 발명은 디스플레이 콘트라스트가 우수하면서도 검정색 또는 흑색의 디스플레이가 우수한 LED 픽셀 패키지 및 제조방법을 제공하는데 그 목적이 있다. An object of the present invention for solving the problems of the prior art described above is to provide an LED pixel package and a manufacturing method having excellent display contrast and excellent black or black display.
또한, 본 발명은 광 추출 효율 및 광 출력을 향상시킨 LED 픽셀 패키지 및 제조방법을 제공하는데 또 다른 목적이 있다. In addition, the present invention has another object to provide an LED pixel package and a manufacturing method that improves light extraction efficiency and light output.
또한, LED 픽셀 패키지가 구현되는 경우에는 그 크기가 과다하게 구성될 수 밖에 없어 액티브 매트릭스를 구현하기에는 물리적 크기와 비용적인 측면에서 효용성이 떨어지는 문제를 해결하기 위해 능동화소 IC를 포함하는 LED 픽셀 패키지 및 제조방법을 제공하는데 또 다른 목적이 있다.In addition, when the LED pixel package is implemented, the size of the LED pixel package is inevitably excessive, and thus the LED pixel package including the active pixel IC and the LED pixel package including the active pixel IC are ineffective in terms of physical size and cost to implement the active matrix. Another object is to provide a manufacturing method.
본 발명이 이루고자 하는 기술적 과제들은 이상에서 언급한 기술적 과제들로 제한되지 않으며, 언급되지 않은 또 다른 기술적 과제들은 본 발명의 기재로부터 당해 분야에서 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다. The technical problems to be achieved by the present invention are not limited to the technical problems mentioned above, and other technical problems that are not mentioned will be clearly understood by those of ordinary skill in the art from the description of the present invention. .
본 발명은 전술한 종래기술의 문제점을 해결하기 위해 안출된 것으로서, (a) 기판 상에 적어도 하나 이상의 LED 칩(chip)과 적어도 하나 이상의 능동화소 IC를 플립 칩(flip chip) 본딩하는 단계; (b) 상기 LED 칩 및 능동화소 IC 전체를 커버하도록 기판의 상부를 흑색 수지(black resin)로 몰딩하는 단계; (c) 상기 흑색 수지로 몰딩된 영역의 상부 영역을 상기 LED 칩의 상면이 드러나도록 그라인딩(grinding)하는 단계; (d) 상기 LED 칩과 능동화소 IC가 각각 하나씩 한 쌍을 이루도록 커팅하는 단계;를 포함하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법을 제공한다. The present invention has been devised to solve the problems of the prior art described above, comprising: (a) flip chip bonding at least one LED chip and at least one active pixel IC on a substrate; (b) molding an upper portion of the substrate with black resin to cover the entire LED chip and the active pixel IC; (c) grinding an upper area of the area molded with the black resin so that the upper surface of the LED chip is exposed; (d) cutting the LED chip and the active pixel IC to form a pair, respectively, to provide a method of manufacturing an LED pixel package including an active pixel IC.
본 발명은 상기 (c) 단계 후에, (c1) 상기 기판의 하면에 솔더볼(solder ball)을 실장하는 단계; 를 더 포함하는 것이 바람직하다. The present invention includes the steps of (c1) mounting a solder ball on the lower surface of the substrate after the step (c); It is preferable to further include.
본 발명에서 상기 흑색 수지(black resin)는, 카본 블랙이 혼합된 PPA(Polyphtalamide) 수지, 블랙 EMC(Epoxy Mold Compound) 수지 또는 블랙 실리콘(black silicon) 중 어느 하나인 것이 바람직하다. In the present invention, the black resin is preferably any one of a polyphtalamide (PPA) resin mixed with carbon black, an epoxy mold compound (EMC) resin, or black silicon.
본 발명에서 상기 (a) 단계는, 상기 LED 칩과 능동화소 IC가 한 쌍을 이루면서 (M x N) 의 배열을 이루도록 기판 상에 플립 칩 본딩하는 것이 바람직하다. In the present invention, the step (a) is preferably flip-chip bonding on the substrate so that the LED chip and the active pixel IC form a pair and form an array of (M x N).
본 발명에서 상기 (b) 단계는, (b1) 상기 LED 칩과 능동화소 IC의 상부 및 기판의 각 측면부를 커버하도록 금형을 설치하는 단계; (b2) 상기 금형의 측면에 형성되는 적어도 하나 이상의 몰딩 주입구를 통해 흑색 수지(black resin)를 주입하는 단계; 및 (b3) 상기 흑색 수지(black resin)의 경화 후 금형을 제거하는 단계;로 형성되는 것이 바람직하다. In the present invention, the step (b) includes: (b1) installing a mold to cover the upper portion of the LED chip and the active pixel IC and each side portion of the substrate; (b2) injecting black resin through at least one molding injection hole formed on a side surface of the mold; And (b3) removing the mold after curing the black resin.
본 발명에서 상기 능동화소 IC의 두께는 상기 LED 칩의 두께보다 얇은 것이 바람직하다. In the present invention, it is preferable that the thickness of the active pixel IC is thinner than that of the LED chip.
본 발명에서 상기 (a)단계는, 상기 능동화소 IC가 플립칩 본딩된 LED 칩의 높이보다 낮게 형성되도록 플립칩 본딩되는 것이 바람직하다. In the present invention, the step (a) is preferably flip-chip bonded so that the active pixel IC is formed lower than the height of the flip-chip bonded LED chip.
본 발명에서 상기 (c)단계는, 상기 능동화소 IC의 상면이 흑색 수지(black resin) 몰딩 영역으로부터 드러나지 않도록 그라인딩 하는 것이 바람직하다. In the present invention, the step (c) is preferably ground so that the upper surface of the active pixel IC is not exposed from the black resin molding area.
본 발명에서 상기 (d) 단계는, 상기 기판 상에 (M+1) x (N+1)개의 커팅 라인을 형성한 후, 커팅 라인을 따라 커팅하는 것이 바람직하다. In the present invention, in the step (d), after forming (M+1) x (N+1) cutting lines on the substrate, it is preferable to cut along the cutting lines.
본 발명은 상기 LED 픽셀 패키지 제조방법에 의해 형성되는 능동화소 IC를 포함하는 LED 픽셀 패키지를 제공한다. The present invention provides an LED pixel package including an active pixel IC formed by the LED pixel package manufacturing method.
본 발명에 의하면, 디스플레이 콘트라스트가 우수하고, 검정색 또는 흑색의 디스플레이가 우수한 LED 픽셀 패키지 및 제조방법을 제공하는 효과가 있다. According to the present invention, there is an effect of providing an LED pixel package and manufacturing method having excellent display contrast and excellent black or black display.
또한, 본 발명에 의하면, LED 칩의 상면을 제외한 LED 픽셀 패키지의 상부 및 측부를 흑색 수지로 몰딩함으로써 광 추출 효율 및 광 출력을 향상시킨 LED 픽셀 패키지 및 제조방법을 제공하는 효과가 있다. In addition, according to the present invention, there is an effect of providing an LED pixel package and a manufacturing method in which light extraction efficiency and light output are improved by molding the upper and side portions of the LED pixel package excluding the upper surface of the LED chip with black resin.
또한, 본 발명에 의하면, LED 픽셀 패키지가 구현되는 경우에는 그 크기가 과다하게 구성될 수 밖에 없어 액티브 매트릭스를 구현하기에는 물리적 크기와 비용적인 측면에서 효용성이 떨어지는 문제를 해결하는 효과가 있다. In addition, according to the present invention, when the LED pixel package is implemented, the size of the LED pixel package must be excessively configured, and thus, there is an effect of solving the problem that the utility is inferior in terms of physical size and cost to implement an active matrix.
도 1은 본 발명의 실시예에 따른 능동화소 IC를 포함하는 LED 픽셀 패키지의 상면도 및 단면도. 1 is a top view and a cross-sectional view of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
도 2는 본 발명의 실시예에 따른 능동화소 IC를 포함하는 LED 픽셀 패키지의 구성도.2 is a block diagram of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
도 3은 본 발명의 실시예에 따른 능동화소 IC를 포함하는 LED 픽셀 패키지의 내부 배치도 및 배면도. 3 is an internal layout view and a rear view of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
도 4는 본 발명의 실시예에 따른 기판상에 LED 칩 및 능동화소 IC를 플립칩 본딩하는 모습을 나타낸 예시도. 4 is an exemplary view showing a state of flip chip bonding an LED chip and an active pixel IC on a substrate according to an embodiment of the present invention.
도 5는 본 발명의 실시예에 따른 기판상에 금형을 설치하고 몰딩한 후 제거한 모습을 나타낸 예시도. 5 is an exemplary view showing a mold installed on a substrate according to an embodiment of the present invention, and then removed after molding.
도 6은 본 발명의 실시예에 따른 기판상의 몰딩을 그라인딩하는 모습을 나타낸 예시도. 6 is an exemplary view showing a state of grinding molding on a substrate according to an embodiment of the present invention.
도 7은 본 발명의 실시예에 따른 기판 하부에 솔더볼을 실장한 모습을 나타낸 예시도. 7 is an exemplary view showing a state in which a solder ball is mounted under a substrate according to an embodiment of the present invention.
도 8은 본 발명의 실시예에 따른 기판상에 커팅라인을 형성하고 커팅라인에 따라 커팅하는 모습을 나타낸 예시도. 8 is an exemplary view showing a state of forming a cutting line on a substrate and cutting along the cutting line according to an embodiment of the present invention.
도 9는 본 발명의 실시예에 따른 하나의 LED 픽셀 패키지를 제조하는 각 공정을 나타내는 순서도. 9 is a flow chart showing each process of manufacturing one LED pixel package according to an embodiment of the present invention.
본 발명은 기판 상에 적어도 하나 이상의 LED 칩(chip)과 적어도 하나 이상의 능동화소 IC를 플립 칩(flip chip) 본딩하는 단계, 상기 LED 칩 및 능동화소 IC 전체를 커버하도록 기판의 상부를 흑색 수지(black resin)로 몰딩하는 단계, 상기 흑색 수지로 몰딩된 영역의 상부 영역을 상기 LED 칩의 상면이 드러나도록 그라인딩(grinding)하는 단계, 상기 LED 칩과 능동화소 IC가 각각 하나씩 한 쌍을 이루도록 커팅하는 단계를 포함하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법에 관한 것이다.The present invention provides a step of flip chip bonding at least one LED chip and at least one active pixel IC on a substrate, and the upper portion of the substrate is made of a black resin to cover the entire LED chip and the active pixel IC. molding with black resin), grinding the upper area of the area molded with the black resin so that the upper surface of the LED chip is exposed, cutting the LED chip and the active pixel IC to form a pair, respectively It relates to a method of manufacturing an LED pixel package including an active pixel IC comprising the step.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 이에 앞서, 본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다. 따라서, 본 명세서에 기재된 실시예와 도면에 도시된 구성은 본 발명의 가장 바람직한 일실시예에 불과할 뿐이고 본 발명의 기술적 사상을 모두 대변하는 것은 아니므로, 본 출원시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형예들이 있을 수 있음을 이해하여야 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the present specification and claims should not be construed as limited to their usual or dictionary meanings, and the inventors appropriately explain the concept of terms in order to describe their own invention in the best way. Based on the principle that it can be defined, it should be interpreted as a meaning and concept consistent with the technical idea of the present invention. Accordingly, the embodiments described in the present specification and the configurations shown in the drawings are only the most preferred embodiments of the present invention, and do not represent all the technical spirit of the present invention, and thus various alternatives that can be substituted for them at the time of application It should be understood that there may be equivalents and variations.
도 1은 본 발명의 실시예에 따른 능동화소 IC를 포함하는 LED 픽셀 패키지의 상면도 및 단면도이다. 1 is a top view and a cross-sectional view of an LED pixel package including an active pixel IC according to an embodiment of the present invention.
본 발명은 디스플레이 콘트라스트가 우수하고, 검정색 또는 흑색의 디스플레이가 우수한 LED 픽셀 패키지를 제공하고자 고안되었다. 이를 위해 검은색 디스플레이의 완벽한 구현을 위해 흑색 수지(black resin)로 몰딩하였고, 액티브 매트릭스를 구현하기에 물리적 크기와 비용적인 측면에서 효용성이 떨어지는 문제를 해결하기 위해 능동화소 IC를 포함하여 LED 픽셀 패키지를 구성하였다. The present invention has been devised to provide an LED pixel package having excellent display contrast and excellent black or black display. To this end, it was molded with black resin for perfect implementation of a black display, and an LED pixel package including an active pixel IC to solve the problem of ineffectiveness in terms of physical size and cost to implement an active matrix. Was configured.
도 1의 (a)를 참조하면, 기판의 상부면은 LED 칩(10)의 상부를 제외하고는 흑색 수지 몰딩 영역(50)으로 커버되며, 후술하겠지만 이는 LED 칩(10)으로부터 조사되는 빛이 LED 픽셀 패키지 내부로 유입되어 능동화소 IC(20)의 동작에 영향을 주는 것을 방지하기 위함이다. Referring to Figure 1 (a), the upper surface of the substrate is covered with a black resin molding area 50 except for the upper portion of the LED chip 10, which will be described later, this is the light irradiated from the LED chip 10 This is to prevent influencing the operation of the active pixel IC 20 by flowing into the LED pixel package.
이 경우, 노출되는 LED 칩(10)의 크기는 마이크로 LED 기술의 발전으로 상대적으로 더 작게 제작이 가능하게 됨에 따라, 이에 비례하여 흑색 수지 몰딩 영역(50)이 차지하는 비율을 크게 제작하는 것이 가능하다. In this case, as the size of the exposed LED chip 10 becomes relatively smaller due to the development of micro LED technology, it is possible to manufacture a large proportion of the black resin molding area 50 in proportion thereto. .
도 1의 (b)를 참조하면, 상기 능동화소 IC(20)의 두께는 상기 LED 칩(10)의 두께보다 얇게 형성되거나 또는 상기 능동화소 IC(20)가 플립칩 본딩된 LED 칩(10)의 높이보다 낮게 형성되도록 플립칩 본딩되도록 형성되는데 이는 흑색 수지 몰딩 영역(50)의 상부면 제거시 LED 칩(10)의 상부는 용이하게 드러나면서도 능동화소IC(20)는 흑색 수지 몰딩 영역(50) 내부에 위치시키기 위함이다. Referring to Figure 1 (b), the thickness of the active pixel IC 20 is formed thinner than the thickness of the LED chip 10, or the active pixel IC 20 is flip-chip bonded LED chip 10 When the upper surface of the black resin molding area 50 is removed, the upper part of the LED chip 10 is easily exposed while the active pixel IC 20 is formed to be lower than the height of the black resin molding area 50. ) To be located inside.
이와 같은 본 발명의 LED 픽셀패키지의 기능 및 특장점에 대해서는 제조공정과 함께 후술하기로 한다. The functions and features of the LED pixel package of the present invention will be described later along with the manufacturing process.
도 2는 본 발명의 실시예에 따른 능동화소 IC를 포함하는 LED 픽셀 패키지의 구성도이고, 도 3은 본 발명의 실시예에 따른 능동화소 IC를 포함하는 LED 픽셀 패키지의 내부 배치도 및 배면도이다. 2 is a configuration diagram of an LED pixel package including an active pixel IC according to an embodiment of the present invention, and FIG. 3 is an internal layout view and a rear view of an LED pixel package including an active pixel IC according to an embodiment of the present invention. .
LED 디스플레이는 개별 LED 간의 간격이 좁을수록 픽셀의 수가 보다 조밀하게 되고, 개별 LED의 휘도를 증대시킬수록 전체 디스플레이의 선명도가 증대되어 화질이 개선되는데, 바람직하게는 LED 디스플레이를 액티브 매트릭스로 구현하는 경우 물리적 크기나 비용적인 측면에서 보다 효율적으로 LED 디스플레이를 구현할 수 있다.In the LED display, the smaller the distance between individual LEDs, the denser the number of pixels, and as the brightness of individual LEDs increases, the clarity of the entire display increases and the picture quality is improved. LED displays can be implemented more efficiently in terms of physical size and cost.
이를 위해서는 LED 픽셀 패키지에 전원 제공, 데이터 입력, 접지 등을 위한 핀이 구성되어야 하며, 그 외에도 LED 칩(10)이 포함하고 있는 레드 LED(21), 그린 LED(22), 블루 LED(23) 각각의 인에이블 및 에미션 동작을 위한 스위치 제어 핀 또한 LED 픽셀 패키지에 구성되어야 한다.To do this, pins for power supply, data input, grounding, etc. must be configured in the LED pixel package. In addition, the red LED (21), green LED (22), blue LED (23) included in the LED chip (10) Switch control pins for each enable and emission operation must also be configured in the LED pixel package.
그러나 위와 같은 구성으로 LED 픽셀 패키지가 구현되는 경우에는 그 크기가 과다하게 구성될 수 밖에 없어 액티브 매트릭스를 구현하기에는 물리적 크기와 비용적인 측면에서 효용성이 떨어지는 문제가 있다. However, when the LED pixel package is implemented with the above configuration, the size of the LED pixel package is inevitably excessive, and thus there is a problem that the effectiveness in terms of physical size and cost is inferior to implement the active matrix.
본 발명은 액티브 매트릭스로 구현이 가능면서도 물리적 크기를 최소화하고 제조비용을 저감하는 LED 픽셀 패키지를 제공하고자 고안되었다. The present invention has been devised to provide an LED pixel package that can be implemented as an active matrix while minimizing physical size and reducing manufacturing cost.
본 발명은 신호 입력의 전압 레벨에 따라 출력 신호와 신호 출력이 결정되고, 상기 출력 신호와 신호 출력에 의해 LED 발광신호가 생성되며, 상기 LED 발광신호에 의해 각 LED의 발광 타이밍과 데이터 입력에 의해 각 LED의 발광 휘도가 결정됨으로써 LED 픽셀 패키지에 필수적으로 요구되는 핀의 수가 감소됨과 동시에 액티브 매트릭스로 LED 디스플레이를 구현하고자 한다.In the present invention, the output signal and the signal output are determined according to the voltage level of the signal input, the LED emission signal is generated by the output signal and the signal output, and the emission timing of each LED and the data input by the LED emission signal As the luminance of each LED is determined, the number of pins required for an LED pixel package is reduced, and at the same time, an LED display is implemented with an active matrix.
상기 레드 LED(310), 그린 LED(311) 및 블루 LED(312)는 LED 칩(10) 내 각각 하나씩 배치되며, 신호 입력의 레벨과 데이터 입력의 레벨에 따라 발광 휘도와 발광 타이밍이 제어된다. 그리고, 본 발명은 레드 LED(21), 그린 LED(22), 블루 LED(23) 각각을 구동시키기 위한 LED 전류발생부(미도시) 및 최종적으로 LED 발광을 위한 각각의 에미션스위치(미도시)가 더 구비될 수 있다. The red LED 310, the green LED 311, and the blue LED 312 are arranged one by one in the LED chip 10, and emission luminance and emission timing are controlled according to the level of the signal input and the level of the data input. In addition, the present invention is an LED current generator (not shown) for driving each of the red LED 21, the green LED 22, and the blue LED 23, and finally each emission switch (not shown) for emitting LED. ) May be further provided.
한편, 종래의 구성으로 LED 액티브 매트릭스를 구현하기 위해서는 레드 인에이블스위치, 그린 인에이블스위치, 블루 인에이블스위치, 에미션스위치(레드 에미션스위치, 그린 에미션스위치, 블루 에미션스위치를 동시에 온/오프 제어)를 각각 제어하기 위한 핀이 구성되어야 하므로 최소한 8개 이상의 핀이 구성되어야 하였으나, 본 발명은 신호 핀을 통해 인가되는 신호 입력의 전압 레벨에 따라 각 LED에 흐르는 전류를 제어함으로써 총 4개의 핀만으로 LED 픽셀 패키지를 구현한다.On the other hand, in order to implement the LED active matrix with the conventional configuration, the red enable switch, green enable switch, blue enable switch, and emission switch (red emission switch, green emission switch, and blue emission switch are turned on at the same time). Off control), so at least eight pins must be configured, but the present invention controls the current flowing through each LED according to the voltage level of the signal input applied through the signal pin, The LED pixel package is implemented with only pins.
본 발명에서 상기 4개의 핀은 능동화소 IC(20)에 포함되는데, 상기 LED 픽셀 패키지로의 전원 입력을 위한 전원 핀(27), 상기 LED 픽셀 패키지로의 신호 입력을 위한 신호 핀(26), 상기 LED 픽셀 패키지로의 데이터 입력을 위한 데이터 핀(25) 및 상기 LED 픽셀 패키지의 접지를 위한 접지 핀(24) 으로 구성될 수 있다. In the present invention, the four pins are included in the active pixel IC 20, a power pin 27 for inputting power to the LED pixel package, a signal pin 26 for inputting a signal to the LED pixel package, It may be composed of a data pin 25 for inputting data to the LED pixel package and a ground pin 24 for grounding the LED pixel package.
즉, 하나의 LED 픽셀 패키지의 능동화소 IC(20)에는 전원 핀(27), 신호 핀(26), 데이터 핀(25) 및 접지 핀(24)의 총 4개의 핀이 구성되며, 이를 통해 각 행과 열을 구분하여 신호 입력과 데이터 입력이 이루어질 수 있다.That is, in the active pixel IC 20 of one LED pixel package, a total of four pins, including the power pin 27, the signal pin 26, the data pin 25, and the ground pin 24, are configured. Signal input and data input can be performed by separating rows and columns.
한편, 하나의 LED 픽셀 패키지의 기판 후면에는 4개의 패드가 장착되는데, 전원 패드(27'), 신호 패드(26'), 데이터 패드(27') 및 접지 패드(24')가 형성될 수 있다. Meanwhile, four pads are mounted on the rear surface of the substrate of one LED pixel package, and a power pad 27', a signal pad 26', a data pad 27', and a ground pad 24' may be formed. .
본 발명에서 상기 전원 패드(27'), 신호 패드(26'), 데이터 패드(27') 및 접지 패드(24')는 솔더볼 실장을 통해 형성될 수 있을 것이다. In the present invention, the power pad 27', the signal pad 26', the data pad 27', and the ground pad 24' may be formed through solder ball mounting.
위와 같이 본 발명은 LED 픽셀 패키지에 능동화소 IC(20)를 적용함으로써, 구동을 위한 구동 회로가 매우 간략화 되어 화소 사이즈 및 화소 간격의 감소에 매우 유리하며, 전력 소모 역시 동시에 감소 가능한 장점이 있다. As described above, according to the present invention, by applying the active pixel IC 20 to the LED pixel package, the driving circuit for driving is very simplified, which is very advantageous in reducing the pixel size and pixel spacing, and power consumption can be reduced at the same time.
도 4 내지 도 8은 LED 픽셀 패키지를 제조하는 각 공정을 흐름에 따라 나타내는 예시도들이다. 4 to 8 are exemplary diagrams illustrating each process of manufacturing an LED pixel package according to a flow.
본 발명은 (a) 기판 상에 적어도 하나 이상의 LED 칩(chip)과 적어도 하나 이상의 능동화소 IC를 플립 칩(flip chip) 본딩하는 단계, (b) 상기 LED 칩 및 능동화소 IC 전체를 커버하도록 기판의 상부를 흑색 수지(black resin)로 몰딩하는 단계, (c) 상기 흑색 수지로 몰딩된 영역의 상부 영역을 상기 LED 칩의 상면이 드러나도록 그라인딩(grinding)하는 단계, (c1) 상기 기판의 하면에 솔더볼(solder ball)을 실장하는 단계, (d) 상기 LED 칩과 능동화소 IC가 각각 하나씩 한 쌍을 이루도록 커팅하는 단계를 포함하도록 구성될 수 있다. The present invention comprises the steps of: (a) flip chip bonding at least one LED chip and at least one active pixel IC on a substrate, (b) a substrate to cover the entire LED chip and the active pixel IC. Molding the upper part of the black resin, (c) grinding the upper area of the area molded with the black resin so that the upper surface of the LED chip is exposed, (c1) the lower surface of the substrate Mounting a solder ball on the device, (d) cutting the LED chip and the active pixel IC to form a pair, respectively.
도 4는 본 발명의 실시예에 따른 기판상에 LED 칩 및 능동화소 IC를 플립칩 본딩하는 모습을 나타낸 예시도이다. 4 is an exemplary view showing flip chip bonding of an LED chip and an active pixel IC on a substrate according to an embodiment of the present invention.
먼저 본 발명은 (a) 기판(30) 상에 적어도 하나 이상의 LED 칩(10)과 적어도 하나 이상의 능동화소 IC(20)를 플립 칩(flip chip) 본딩하는 단계를 거친다. First, in the present invention, (a) at least one LED chip 10 and at least one active pixel IC 20 are bonded to each other on a substrate 30 by flip chip bonding.
상기 LED 칩(10)은 도 4의 (a)에서 볼 수 있듯이, R(레드) LED, G(그린) LED 및 B(블루) LED를 포함하여 형성될 수 있다. 상기 LED 칩(10)은 RGB LED 뿐만 아니라 μLED 또는 OLED를 적용할 수 있을 것이다. The LED chip 10 may be formed including an R (red) LED, a G (green) LED, and a B (blue) LED, as shown in (a) of FIG. 4. The LED chip 10 may be applied not only to RGB LED but also to μLED or OLED.
바람직하게는 상기 다수의 LED 칩(10)과 다수의 능동화소 IC(20)를 기판(30)상에 배열하되, 각 LED 칩(10)과 각 능동화소 IC(20)가 한 쌍을 이루도록 배열한다. 상기 다수의 LED 칩(10)과 다수의 능동화소 IC(20)는 가로/세로 (M x N)의 배열을 이루도록 기판(30) 상에 플립 칩 본딩하게 된다. Preferably, the plurality of LED chips 10 and the plurality of active pixel ICs 20 are arranged on the substrate 30, but each LED chip 10 and each active pixel IC 20 are arranged to form a pair. do. The plurality of LED chips 10 and the plurality of active pixel ICs 20 are flip-chip bonded on the substrate 30 to form a horizontal/vertical (M x N) arrangement.
이 때, 상기 능동화소 IC(20)의 두께는 LED 칩(10)의 두께보다 얇은 것이 바람직하다. 다만, 발명의 필요에 따라 상기 능동화소 IC(20)의 두께가 상기 LED 칩(10)의 두께와 비슷하거나 더 두껍더라도 LED 칩(10)의 패드 범프(60)의 높이를 더 높게 형성하여 결과적으로 플립칩 본딩된 LED 칩(10)의 상면이 플립칩 본딩된 능동화소 IC(20)의 상면보다 높게 형성하는 것도 가능할 것이다. In this case, it is preferable that the thickness of the active pixel IC 20 is thinner than that of the LED chip 10. However, even if the thickness of the active pixel IC 20 is similar to or thicker than the thickness of the LED chip 10 according to the need of the invention, the height of the pad bump 60 of the LED chip 10 is formed higher, resulting in It may be possible to form the upper surface of the flip-chip-bonded LED chip 10 higher than the upper surface of the flip-chip-bonded active pixel IC 20.
상기 플립칩 본딩은 공지된 플립칩 본딩 방식으로 공정을 수행할 수 있을 것이다. The flip chip bonding may be performed by a known flip chip bonding method.
도 5는 본 발명의 실시예에 따른 기판상에 금형을 설치하고 몰딩한 후 제거한 모습을 나타낸 예시도이다. 5 is an exemplary view showing a mold installed on a substrate according to an embodiment of the present invention, and then removed after molding.
본 발명은 상기 (a) 단계 후에, (b) 상기 LED 칩(10) 및 능동화소 IC(20) 전체를 커버하도록 기판(30)의 상부를 흑색 수지(black resin)로 몰딩하는 단계를 거치게 된다. In the present invention, after step (a), (b) molding the upper portion of the substrate 30 with black resin to cover the entire LED chip 10 and the active pixel IC 20 .
즉, 상기 (b) 단계는, (b1) 상기 LED 칩(10)과 능동화소 IC(20)의 상부 및 기판(30)의 각 측면부를 커버하도록 금형(70)을 설치하는 단계, (b2) 상기 금형(70)의 측면에 형성되는 적어도 하나 이상의 몰딩 주입구(71)를 통해 흑색 수지(black resin)를 주입하는 단계 및 (b3) 상기 흑색 수지(black resin)의 경화 후 금형(70)을 제거하는 단계로 형성될 수 있다. That is, the step (b) includes the steps of (b1) installing the mold 70 to cover the upper portions of the LED chip 10 and the active pixel IC 20 and each side portion of the substrate 30, (b2) Injecting black resin through at least one molding injection hole 71 formed on the side of the mold 70 and (b3) removing the mold 70 after curing the black resin It can be formed in a step.
도 5의 (a)를 보면, 측면에 복수의 몰딩 주입구(71)가 구비된 금형(70)이 기판(30)의 상부를 커버하는 모습의 단면도를 제시하고 있다. Referring to FIG. 5A, a cross-sectional view of a mold 70 having a plurality of molding injection ports 71 on the side surface covering the upper portion of the substrate 30 is shown.
또한, 도 5의 (b)는, 도 5의 (a)에서 몰딩 주입구(71) 부분을 측면으로 자른 단면도를 도시하고 있는데, 기판(30)의 상부 및 각 측면부를 커버하는 금형(70)을 설치한 후, 몰딩 주입구(70)를 통해 흑색 수지(black resin)를 주입하고 경화된 후, 상기 금형(70)을 제거한 모습을 나타내고 있다. In addition, Figure 5 (b) is a cross-sectional view of the molding injection hole 71 in Figure 5 (a) cut to the side, the mold 70 covering the top and each side of the substrate 30 After installation, black resin is injected through the molding injection port 70 and cured, and the mold 70 is removed.
여기서, 상기 흑색 수지(black resin)는, 카본 블랙이 혼합된 PPA(Polyphtalamide) 수지, 블랙 EMC(Epoxy Mold Compound) 수지 또는 블랙 실리콘(black silicon) 중에서 선택된 어느 하나의 수지를 적용할 수 있다. Here, as the black resin, any one resin selected from polyphtalamide (PPA) resin mixed with carbon black, epoxy mold compound (EMC) resin, or black silicon may be used.
또한, 발명의 필요에 따라 상기 흑색 수지(black resin)는 카본 블랙이 혼합된 PPA(Polyphtalamide) 수지, 블랙 EMC(Epoxy Mold Compound) 수지 및 블랙 실리콘(black silicon)이 아니더라도 광반사율이 낮은 부재로서 흑색/검은색 계통의 수지라면 어떠한 종류의 수지도 적용이 가능할 것이다. In addition, according to the necessity of the invention, the black resin is a member having low light reflectance even if it is not a PPA (polyphtalamide) resin mixed with carbon black, black EMC (Epoxy Mold Compound) resin, and black silicon. /If it is a black resin, any type of resin will be applicable.
이와 같이 상기 흑색 수지 몰딩 영역(50)은 광 반사율이 낮은 부재로 형성됨으로써, 상기 LED 칩(10)의 점등 및 소등 간의 콘트라스트(contrast)를 높이기 위하여 빛을 흡수하는 기능을 수행하게 된다. As described above, the black resin molding region 50 is formed of a member having a low light reflectance, and thus, performs a function of absorbing light in order to increase the contrast between turning on and off the LED chip 10.
또한, 후술하겠지만, LED 칩(10)의 상면은 흑색 수지 몰딩 영역(50)으로부터 드러남에 비해 능동화소 IC(20)는 흑색 수지 몰딩 영역(50) 속에 묻히는 구조를 갖기 때문에 능동화소 IC(20)로의 광 유입을 배제하고 또한 능동화소 IC(20)의 영향을 배제하여, LED 칩(10)의 기능에는 문제가 없되, LED 칩(10)의 점등 및 소등 간에 높은 콘트라스트(contrast)를 구현할 수 있게 된다. In addition, as will be described later, since the top surface of the LED chip 10 is exposed from the black resin molding region 50, the active pixel IC 20 has a structure that is buried in the black resin molding region 50, so the active pixel IC 20 By excluding the inflow of light into the furnace and excluding the influence of the active pixel IC 20, there is no problem in the function of the LED chip 10, but a high contrast between the LED chip 10 is turned on and off is realized. do.
결국, 본 발명은 LED 칩(10)으로부터 조사되는 빛이 능동화소 IC(20) 및 LED 픽셀패키지 내부로 유입되는 것이 차단되고, LED 픽셀 패키지 밖으로 조사되기 때문에 광 추출 효율을 향상시킬 수 있고, 그 결과 광 출력을 향상시킬 수 있다.As a result, the present invention can improve light extraction efficiency because the light irradiated from the LED chip 10 is blocked from flowing into the active pixel IC 20 and the LED pixel package, and is irradiated outside the LED pixel package. As a result, the light output can be improved.
도 6은 본 발명의 실시예에 따른 기판상의 몰딩을 그라인딩하는 모습을 나타낸 예시도이다. 6 is an exemplary view showing a state of grinding molding on a substrate according to an embodiment of the present invention.
본 발명은 상기 (b)단계 후에, (c) 상기 흑색 수지로 몰딩된 영역(50)의 상부 영역을 상기 LED 칩(10)의 상면이 드러나도록 그라인딩(grinding)하는 단계를 거친다. In the present invention, after step (b), (c) grinding the upper area of the area 50 molded with the black resin so that the upper surface of the LED chip 10 is exposed.
즉, 상기 (c)단계는, 상기 LED 칩(10)의 상면이 드러나도록 그라인딩(grinding)하되, 상기 능동화소 IC(20)의 상면이 흑색 수지(black resin) 몰딩 영역(50)으로부터 드러나지 않도록 그라인딩하는 과정이라고 할 수 있다. That is, in the step (c), grinding so that the upper surface of the LED chip 10 is exposed, but the upper surface of the active pixel IC 20 is not exposed from the black resin molding area 50. It can be called a grinding process.
이는 상기 LED 칩(10)으로부터 조사되는 빛이 능동화소 IC(20) 쪽으로 유입되지 않도록 하기 위함이며, 이를 위해 상기 능동화소 IC(20)의 두께는 LED 칩(10)의 두께보다 얇게 형성될 수 있을 것이다. This is to prevent the light irradiated from the LED chip 10 from flowing into the active pixel IC 20, and for this purpose, the thickness of the active pixel IC 20 may be formed to be thinner than the thickness of the LED chip 10. There will be.
또한, 전술한 바대로, 상기 능동화소 IC(20)의 두께가 상기 LED 칩(10)의 두께와 비슷하거나 더 두껍더라도 능동화소 IC(20)와 LED 칩(10)의 패드 범프(60)의 높이를 조절하여 플립칩 본딩된 LED 칩(10)의 상면이 플립칩 본딩된 능동화소 IC(20)의 상면보다 높게 형성하는 것도 가능할 것이다. In addition, as described above, even if the thickness of the active pixel IC 20 is similar to or thicker than the thickness of the LED chip 10, the active pixel IC 20 and the pad bump 60 of the LED chip 10 It is also possible to adjust the height so that the top surface of the flip-chip bonded LED chip 10 is higher than the top surface of the flip-chip bonded active pixel IC 20.
플립칩 본딩된 상기 LED 칩(10)의 상부면과 능동화소 IC 칩(20)의 상부면은 100μm 내지 1,000 μm의 높이차를 두는 것이 바람직할 것이다. It is preferable that the upper surface of the flip-chip bonded LED chip 10 and the upper surface of the active pixel IC chip 20 have a height difference of 100 μm to 1,000 μm.
마찬가지로 상기 LED 칩(10)의 두께는 능동화소 IC 칩(20)의 두께보다 100μm 내지 1,000 μm의 범위 내에서 더 두껍게 형성될 수 있을 것이다. Similarly, the thickness of the LED chip 10 may be formed to be thicker than the thickness of the active pixel IC chip 20 within a range of 100 μm to 1,000 μm.
상기 (c) 단계는, 상기 LED 칩(10)의 상면이 드러나도록 연삭 가공(grinding)하는 것으로 기재되어 있으나, 본 발명에서는 이에 한정되는 것은 아니고 발명의 필요에 따라 상기 흑색 수지로 몰딩된 영역(50)의 상부 영역을 레이저 빔 조사 등을 통해 정밀하게 제거하는 것도 가능할 것이다. The step (c) is described as grinding to expose the upper surface of the LED chip 10, but the present invention is not limited thereto, and the area molded with the black resin according to the needs of the invention ( It will also be possible to precisely remove the upper area of 50) through laser beam irradiation.
도 7은 본 발명의 실시예에 따른 기판 하부에 솔더볼을 실장한 모습을 나타낸 예시도이다. 7 is an exemplary view showing a state in which a solder ball is mounted under a substrate according to an embodiment of the present invention.
본 발명은 상기 (c)단계 후에, (c1) 상기 기판(30)의 하면에 솔더볼(40)을 실장(mounting)하는 단계를 거치게 된다. In the present invention, after step (c), (c1) a step of mounting the solder ball 40 on the lower surface of the substrate 30 is performed.
상기 솔더볼(40)의 재질은 공지의 재질을 이용할 수 있으며, LED 픽셀패키지의 커팅 시 한 쌍의 LED 칩(10)과 능동화소 IC(20)가 위치하는 기판(30) 하부에 4개의 솔더볼이 위치하도록 솔더볼 마운팅 과정을 거치는 것이 바람직하다. The material of the solder ball 40 may be a known material, and when cutting the LED pixel package, four solder balls are formed under the substrate 30 where the pair of LED chips 10 and the active pixel IC 20 are located. It is desirable to go through the solder ball mounting process to be positioned.
하나의 LED 픽셀 패키지 하부에 위치하는 4개의 솔더볼(40)은 전술한 바대로 각각 접지패드(27'), 데이터 패드(25'), 신호 패드(26'), 전원 패드(27')의 기능을 수행할 수 있다. The four solder balls 40 located under one LED pixel package function as a ground pad 27', a data pad 25', a signal pad 26', and a power pad 27', respectively, as described above. Can be done.
도 8은 본 발명의 실시예에 따른 기판상에 커팅라인을 형성하고 커팅라인에 따라 커팅하는 모습을 나타낸 예시도이다. 8 is an exemplary view showing a state of forming a cutting line on a substrate and cutting along the cutting line according to an embodiment of the present invention.
본 발명은 상기 (c)단계 후에, (d) 상기 LED 칩(10)과 능동화소 IC(20)가 각각 하나씩 한 쌍을 이루도록 커팅하는 단계를 거친다. In the present invention, after the step (c), (d) the LED chip 10 and the active pixel IC 20 are cut to form a pair, one each.
만일 기판(30)상에 다수의 LED 칩(10)과 다수의 능동화소 IC(20)가 가로/세로 (M x N)의 배열을 이루도록 플립 칩 본딩된다면, 기판 상에 (M+1) x (N+1)개의 커팅 라인(80)을 형성한 후, 위와 같은 커팅 라인(80)을 따라 커팅하게 될 것이다. If a plurality of LED chips 10 and a plurality of active pixel ICs 20 on the substrate 30 are flip-chip bonded to form a horizontal/vertical (M x N) arrangement, (M+1) x After (N+1) cutting lines 80 are formed, cutting will be performed along the cutting lines 80 as above.
상기 커팅(cutting)은 공지의 절삭 공구, 절삭 장치 또는 소형 프레기 등을 통해 이뤄질 수 있다. The cutting may be performed through a known cutting tool, a cutting device, or a small press.
위와 같이 본 발명은 기판(30)상에 위치한 다수의 LED 칩(10)과 다수의 능동화소 IC(20)가 각각 한 쌍을 이루도록 일괄적으로 커팅함으로써 짧은 시간 내에 LED 픽셀 패키지를 다량으로 제조하는 것이 가능해진다. As described above, according to the present invention, a plurality of LED chips 10 and a plurality of active pixel ICs 20 located on the substrate 30 are collectively cut to form a pair, thereby manufacturing a large amount of LED pixel packages within a short time. It becomes possible.
도 9는 본 발명의 실시예에 따른 하나의 LED 픽셀 패키지를 제조하는 각 공정을 나타내는 순서도이다. 9 is a flow chart showing each process of manufacturing one LED pixel package according to an embodiment of the present invention.
도 9의 (a) 내지 도 9의 (e)를 참조하면, (a) 기판 상에 적어도 하나 이상의 LED 칩(chip)과 적어도 하나 이상의 능동화소 IC를 플립 칩(flip chip) 본딩하고, (b) 상기 LED 칩 및 능동화소 IC 전체를 커버하도록 기판의 상부를 흑색 수지(black resin)로 몰딩한 후, (c) 상기 흑색 수지로 몰딩된 영역의 상부 영역을 상기 LED 칩의 상면이 드러나도록 그라인딩(grinding)하고, (d) 상기 기판의 하면에 솔더볼(solder ball)을 실장한 후, (e) 상기 LED 칩과 능동화소 IC가 각각 하나씩 한 쌍을 이루도록 커팅라인을 따라 커팅함으로써, 능동화소 IC를 포함하는 LED 픽셀 패키지를 산출하게 된다. Referring to FIGS. 9A to 9E, (a) flip chip bonding at least one LED chip and at least one active pixel IC on a substrate, and (b ) After molding the upper part of the substrate with black resin to cover the entire LED chip and the active pixel IC, (c) grinding the upper area of the area molded with the black resin so that the upper surface of the LED chip is exposed. (grinding), (d) mounting a solder ball on the lower surface of the substrate, and then (e) cutting along the cutting line so that the LED chip and the active pixel IC form a pair, respectively, so that the active pixel IC An LED pixel package including a is calculated.
위와 같이 본 발명은 비교적 간단한 제조공정으로 짧은 시간 내에 다량의 LED 픽셀패키지를 신속하게 제조할 수 있어서, 제조공정의 단순화, 제조비용 저감의 부수적 효과를 도출할 수 있는 장점이 있다. As described above, the present invention has the advantage of being able to quickly manufacture a large amount of LED pixel packages within a short time with a relatively simple manufacturing process, thereby simplifying the manufacturing process and derive side effects of reducing manufacturing cost.
또한, 본 발명은 검정색/흑색의 디스플레이가 우수하고, 디스플레이 콘트라스트가 우수하며, LED 칩의 상면을 제외한 LED 픽셀 패키지의 상부 및 측부를 흑색 수지로 몰딩함으로써 광 추출 효율 및 광 출력을 향상시킨 LED 픽셀 패키지를 제공할 수 있는 장점이 있다. In addition, the present invention has an excellent black/black display, excellent display contrast, and an LED pixel that improves light extraction efficiency and light output by molding the upper and side portions of the LED pixel package excluding the upper surface of the LED chip with black resin. There is an advantage of being able to provide a package.
이상 본 발명의 구체적 실시형태와 관련하여 본 발명을 설명하였으나 이는 예시에 불과하며 본 발명은 이에 제한되지 않는다. 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자는 본 발명의 범위를 벗어나지 않고 설명된 실시형태를 변경 또는 변형할 수 있으며, 본 발명의 기술사상과 아래에 기재될 특허청구범위의 균등범위 내에서 다양한 수정 및 변형이 가능하다.The present invention has been described above in connection with the specific embodiments of the present invention, but this is only an example and the present invention is not limited thereto. Those of ordinary skill in the technical field to which the present invention pertains may change or modify the described embodiments without departing from the scope of the present invention, and within the scope of the technical idea of the present invention and the claims to be described below. Various modifications and variations are possible.

Claims (10)

  1. (a) 기판 상에 적어도 하나 이상의 LED 칩(chip)과 적어도 하나 이상의 능동화소 IC를 플립 칩(flip chip) 본딩하는 단계;(a) flip chip bonding at least one LED chip and at least one active pixel IC on a substrate;
    (b) 상기 LED 칩 및 능동화소 IC 전체를 커버하도록 기판의 상부를 흑색 수지(black resin)로 몰딩하는 단계;(b) molding an upper portion of the substrate with black resin to cover the entire LED chip and the active pixel IC;
    (c) 상기 흑색 수지로 몰딩된 영역의 상부 영역을 상기 LED 칩의 상면이 드러나도록 그라인딩(grinding)하는 단계;(c) grinding an upper area of the area molded with the black resin so that the upper surface of the LED chip is exposed;
    (d) 상기 LED 칩과 능동화소 IC가 각각 하나씩 한 쌍을 이루도록 커팅하는 단계;(d) cutting the LED chip and the active pixel IC to form a pair, one each;
    를 포함하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법. LED pixel package manufacturing method comprising an active pixel IC comprising a.
  2. 제 1항에 있어서, 상기 (c) 단계 후에, The method of claim 1, wherein after step (c),
    (c1) 상기 기판의 하면에 솔더볼(solder ball)을 실장하는 단계; (c1) mounting a solder ball on the lower surface of the substrate;
    를 더 포함하는 것을 특징으로 하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법.LED pixel package manufacturing method including an active pixel IC, characterized in that it further comprises.
  3. 제 1항에 있어서, 상기 흑색 수지(black resin)는, The method of claim 1, wherein the black resin,
    카본 블랙이 혼합된 PPA(Polyphtalamide) 수지, 블랙 EMC(Epoxy Mold Compound) 수지 또는 블랙 실리콘(black silicon) 중 어느 하나인 것을 특징으로 하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법.A method for manufacturing an LED pixel package including an active pixel IC, characterized in that any one of a carbon black-mixed PPA (polyphtalamide) resin, a black EMC (epoxy mold compound) resin, or black silicon.
  4. 제 1항에 있어서, 상기 (a) 단계는, The method of claim 1, wherein step (a),
    상기 LED 칩과 능동화소 IC가 한 쌍을 이루면서 (M x N) 의 배열을 이루도록 기판 상에 플립 칩 본딩하는 것을 특징으로 하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법.A method of manufacturing an LED pixel package including an active pixel IC, characterized in that flip chip bonding is performed on a substrate so that the LED chip and the active pixel IC form a pair and form an array of (M x N).
  5. 제 1항에 있어서, 상기 (b) 단계는, The method of claim 1, wherein step (b),
    (b1) 상기 LED 칩과 능동화소 IC의 상부 및 기판의 각 측면부를 커버하도록 금형을 설치하는 단계;(b1) installing a mold to cover the upper portion of the LED chip and the active pixel IC and each side portion of the substrate;
    (b2) 상기 금형의 측면에 형성되는 적어도 하나 이상의 몰딩 주입구를 통해 흑색 수지(black resin)를 주입하는 단계; 및(b2) injecting black resin through at least one molding injection hole formed on a side surface of the mold; And
    (b3) 상기 흑색 수지(black resin)의 경화 후 금형을 제거하는 단계; (b3) removing the mold after curing the black resin;
    로 형성되는 것을 특징으로 하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법.LED pixel package manufacturing method comprising an active pixel IC, characterized in that formed by.
  6. 제 1항에 있어서, The method of claim 1,
    상기 능동화소 IC의 두께는 상기 LED 칩의 두께보다 얇은 것을 특징으로 하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법.The method of manufacturing an LED pixel package including an active pixel IC, characterized in that the thickness of the active pixel IC is thinner than that of the LED chip.
  7. 제 1항에 있어서, 상기 (a)단계는, The method of claim 1, wherein step (a),
    상기 능동화소 IC가 플립칩 본딩된 LED 칩의 높이보다 낮게 형성되도록 플립칩 본딩되는 것을 특징으로 하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법.The method of manufacturing an LED pixel package including an active pixel IC, characterized in that the active pixel IC is flip-chip bonded to be formed lower than the height of the flip-chip bonded LED chip.
  8. 제 1항에 있어서, 상기 (c)단계는, The method of claim 1, wherein step (c),
    상기 능동화소 IC의 상면이 흑색 수지(black resin) 몰딩 영역으로부터 드러나지 않도록 그라인딩 하는 것을 특징으로 하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법.A method of manufacturing an LED pixel package including an active pixel IC, characterized in that grinding is performed so that the upper surface of the active pixel IC is not exposed from a black resin molding area.
  9. 제 1항에 있어서, 상기 (d) 단계는, The method of claim 1, wherein step (d),
    상기 기판 상에 (M+1) x (N+1)개의 커팅 라인을 형성한 후, 커팅 라인을 따라 커팅하는 것을 특징으로 하는 능동화소 IC를 포함하는 LED 픽셀 패키지 제조방법.After forming (M+1) x (N+1) number of cutting lines on the substrate, the method of manufacturing an LED pixel package including an active pixel IC, comprising cutting along the cutting lines.
  10. 제 1항 내지 제 9항 중 어느 한 항의 LED 픽셀 패키지 제조방법에 의해 형성되는 능동화소 IC를 포함하는 LED 픽셀 패키지. An LED pixel package including an active pixel IC formed by the method of manufacturing an LED pixel package according to any one of claims 1 to 9.
PCT/KR2019/018504 2019-02-11 2019-12-26 Led pixel package comprising active pixel ic, and manufacturing method therefor WO2020166814A1 (en)

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