WO2020157153A1 - Fabrication de tracés conducteurs métalliques sur du verre - Google Patents

Fabrication de tracés conducteurs métalliques sur du verre Download PDF

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Publication number
WO2020157153A1
WO2020157153A1 PCT/EP2020/052196 EP2020052196W WO2020157153A1 WO 2020157153 A1 WO2020157153 A1 WO 2020157153A1 EP 2020052196 W EP2020052196 W EP 2020052196W WO 2020157153 A1 WO2020157153 A1 WO 2020157153A1
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WO
WIPO (PCT)
Prior art keywords
metal
recesses
glass
glass carrier
glass support
Prior art date
Application number
PCT/EP2020/052196
Other languages
German (de)
English (en)
Inventor
Robin Krüger
Bernd Rösener
Oktavia Ostermann
Malte Schulz-Ruhtenberg
Original Assignee
Lpkf Laser & Electronics Ag
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Filing date
Publication date
Application filed by Lpkf Laser & Electronics Ag filed Critical Lpkf Laser & Electronics Ag
Publication of WO2020157153A1 publication Critical patent/WO2020157153A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/045—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by making a conductive layer having a relief pattern, followed by abrading of the raised portions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/24—Reinforcing the conductive pattern
    • H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
    • H05K1/115—Via connections; Lands around holes or via connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/095—Conductive through-holes or vias
    • H05K2201/09563—Metal filled via
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09827—Tapered, e.g. tapered hole, via or groove
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09854—Hole or via having special cross-section, e.g. elliptical
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
    • H05K2201/2072—Anchoring, i.e. one structure gripping into another
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/025—Abrading, e.g. grinding or sand blasting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0789—Aqueous acid solution, e.g. for cleaning or etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating

Definitions

  • the present invention relates to a method for producing metallic
  • Conductor tracks on glass in particular in recesses which are formed in the glass, or a method for producing glass supports with conductor tracks made of metal, which are arranged in particular in recesses of the glass support.
  • the glass here called glass carrier, has recesses which form microstructures, metal being arranged in the recesses and essentially no metal being present on the surface of the glass carrier from which the recesses extend into the volume of the glass carrier.
  • An advantage of the invention lies in the fact that metal cannot be made site-selectively, but rather by coating the entire area of the glass carrier, and simple removal of metal in areas outside of desired conductor tracks is possible.
  • Glass carrier is coated with a silane as a coupling reagent, then exposed to UV and then conductive paste is applied to it.
  • KR 20050038018 describes the drilling of holes in a carrier, which can be glass, with subsequent embedding of a conductor in each hole of the carrier by vibrating the carrier.
  • the conductor may be formed from metal particles that fill the holes and then be removed, after which a surface of the carrier is polished to expose the conductors in the holes.
  • the object of the invention is to provide an alternative method and thus available alternative glass supports.
  • the method should preferably establish a firm connection of the metal with the glass carrier.
  • a selective application of metal to the glass carrier is further preferred to be avoided.
  • the silane compound preferably has a mercapto group, an amine group, epoxy group or a carboxylic acid group.
  • the silane compound can be selected, for example, from mercaptosilane, aminosilane, epoxysilane, tetraethylorthosilicate (tetraethoxy silane), other silanes and mixtures of at least two of these, for example in a solvent.
  • the glass carrier can be contacted with the silane compound by contacting the glass carrier with the entire surface of the silane compound, e.g. by immersing in or
  • the recesses can comprise a shell-shaped area which is connected to the recesses by recesses in the form of channels, in particular is connected to all recesses in which channels are to be produced in which metallic conductor tracks are to be produced.
  • the silane compound can then be introduced into the bowl-shaped area of the recesses, e.g. by means of a cannula or by means of a nozzle aligned thereon, and the silane compound is distributed in the recesses connected to it, also under the action of capillary forces which act in the recesses.
  • the glass carrier can be contacted with the silane compound by a printing process, the printing process preferably being set up to apply the silane compound only in the areas in which the recesses are arranged.
  • the method has the advantage of creating a strong connection between the glass carrier and the metal that forms conductor tracks.
  • the recesses optionally run through the thickness of the glass carrier and are open on both opposite surfaces of the glass carrier, for example to form lines through the glass carrier.
  • the recesses are preferably distinguished by the fact that they have an at least sectionally tapering cross section, preferably a cross section which forms a V-shaped blind hole-like channel in the glass carrier or extends V-shaped through the glass carrier, each optionally with an irregularly tapering, more preferably with evenly, especially with between the surfaces of the glass support slightly convex inner surfaces or with a linear slope or straight inner surfaces.
  • the recesses with their central axis which can be a central plane, are inclined at an angle of up to 60 °, up to 45 ° or up to 30 ° or up to 10 ° to the surfaces of the glass carrier; the recesses with their central axis are preferred, which can be a central plane, arranged at right angles to the surfaces of the glass carrier.
  • the recesses have inner walls which are symmetrical to their central axis, which can be a central plane, for example in the case of recesses which extend along the glass carrier in a channel-like manner.
  • the recesses can be rotationally symmetrical with respect to their central axis, for example frustoconical, or can extend as a channel open to a surface of the glass carrier along the central plane of their cross section or along the glass carrier, their inner walls preferably being symmetrical to the central plane.
  • the glass supports optionally have recesses, each of which has at least one
  • the recesses can extend from the surface of each glass carrier in its inner volume and form blind holes; the recesses through each glass carrier are preferred.
  • Continuous recesses are generally those which extend over the complete distance between opposite surfaces of the glass carrier, their cross sections being open in the planes of the opposite surfaces of the glass carrier.
  • the recesses can generally, measured in the plane of a surface of the
  • Glass support e.g. a cross section in the range of 10 pm to 1 mm, e.g. from 20 or from 50 pm to 800 pm or to 700 pm, to 600 pm, to 500 pm, to 400 pm or 300 pm or to 200 pm or to 100 pm, in each case +50 pm and / or -50 pm.
  • the glass carrier which has recesses, is preferably provided in that a glass carrier is treated with laser pulses at the points at which recesses are to be produced, and the glass carrier is then etched.
  • laser impulses create modifications, for example structural changes, in the glass substrate that are more quickly resolved during the subsequent etching than areas that are not laser-irradiated.
  • Laser pulses with a wavelength at which the glass carrier has a high transmission are suitable for glass carriers, for example a wavelength of 1064 nm, for example with pulse lengths of at most 100 ps or at most 50 ps, preferably at most 10 ps.
  • the laser source will operated in pulsed mode, the laser beam is moved in sections or with interruptions over the glass carrier. About the pulse frequency and the speed of movement of the
  • the distance of the impulses radiated onto the glass carrier is set by the laser beam over the glass carrier.
  • the etching can be done with hydrofluoric acid, e.g. 1 to 20% by weight and / or sulfuric acid and / or hydrochloric acid and / or phosphoric acid and / or potassium hydroxide solution, e.g. 5 to 40 ° C.
  • hydrofluoric acid e.g. 1 to 20% by weight and / or sulfuric acid and / or hydrochloric acid and / or phosphoric acid and / or potassium hydroxide solution, e.g. 5 to 40 ° C.
  • the glass support can be flat and, e.g. before irradiation with laser pulses and before etching e.g. a thickness of up to 800 pm, preferably 100 to 800 pm, e.g. 300 to 500 pm, e.g. after etching a thickness that is 50 to 700 or to 200 pm less and continuous recesses in the laser-irradiated areas.
  • etching e.g. a thickness of up to 800 pm, preferably 100 to 800 pm, e.g. 300 to 500 pm, e.g. after etching a thickness that is 50 to 700 or to 200 pm less and continuous recesses in the laser-irradiated areas.
  • through recesses are substantially cylindrical, e.g. at a small angle, e.g. tapered from 3 ° to 15 ° from the surface of the glass carrier into the glass volume or towards the opposite surface of the glass carrier.
  • Recesses that pass through the glass carrier and have an undercut preferably form these through an area with the smallest cross-section of the recess, e.g. is formed in exactly one plane of the surface of the glass carrier.
  • An undercut can alternatively or additionally be formed in that the recess within the glass carrier widens from an area of the smallest cross-section, in particular in the direction of the surface of the glass carrier to which a silane compound and / or metal is applied.
  • an undercut can be formed by the recess tapering and then widening, e.g. each conical. Tapered recesses, which extend from the surface into a glass carrier, are etched along the with a glass carrier
  • Preferred recesses are slots or trenches with a V-shaped cross section
  • Openings with an area of the smallest cross-section within the glass carrier also referred to as an hourglass-shaped cross-section.
  • the opposite surface of a glass carrier can be coated with a material that is resistant to etching (resist) before etching
  • the shape of the recesses which preferably have an area of the smallest cross-section in the plane of exactly one surface of the glass carrier, to which the recesses taper or taper from the surface of the glass carrier opposite the plane makes metal that is melted and solidified in the recesses form-fitting, optional also cohesive, fixed.
  • the recesses in which separate conductors are formed are e.g. arranged at a distance from one another which is at least 10%, at least 20% or at least 50% or at least 200% of the diameter of the recess, measured in the plane of a surface of the glass carrier.
  • the distance can e.g. up to 20 times or up to 15 times or up to 10 times, e.g. up to 200% or up to 100% or up to 50% of the diameter of the recess, measured in the plane of a surface of the glass carrier.
  • the recesses can e.g. a cross-section or diameter in the plane of the surface of the glass carrier in the range from 5 to 200 pm or to 100 pm, e.g. 10 to 50 pm or 15 to 30 or to 20 pm.
  • the longitudinal extent of recesses in the form of channels which extend along the glass carrier can be independent of the diameter.
  • the recesses preferably have channels which have a blind hole-like cross section, and recesses connected therewith which pass through the glass carrier.
  • the glass support can be heated to a temperature at which the silane compound bonds to the glass support by radiation or in an oven.
  • the temperature can be, for example, 80 to 150 ° C., preferably 100 to 120 ° C.
  • step 2 optionally additionally step 3, a glass carrier is produced which is silanized over the entire surface, preferably essentially only within the recesses.
  • the full application of metal to the glass substrate can e.g. by steaming, e.g. PVD (physical vapor deposition) processes or sputtering of the metal are done by contacting with a suspension of nanoparticles containing the metal, e.g. PVD (physical vapor deposition)
  • Step 4 creates a glass substrate on which metal is applied over the entire surface.
  • the metal is preferably metal of the oxidation state zero (Me °).
  • the metal can e.g. Gold, silver, copper, or a mixture of at least two of these.
  • Removing the metal in step 5 removes the metal that is on the surface of the
  • Glass carrier is located, from which the recesses extend.
  • the metal is left in the recesses on the glass carrier, since the removal acts only on the surface from which the recesses extend, since this surface of the glass carrier is spaced from the plane into which the recesses extend into the inner volume of the
  • Glass carrier extend.
  • the metal can easily be removed from this surface of the glass carrier, since this surface has less adhesion to the metal.
  • the removal in step 5 can be carried out by a mechanical method, e.g.
  • step 5 a glass carrier is generated, in the
  • Recesses metal is arranged, wherein between the metal and the recess, a silane compound, which is optionally connected to the recess, is arranged, and the surface, which is preferably planar, is free of metal.
  • the removal can optionally take place in the areas of the surface of the glass carrier which directly adjoins the recesses, so that the surface of the glass carrier is free of metal which is in electrical contact with the metal arranged in the recesses.
  • the metal can be removed until the surface of the glass carrier is clear of metal, which is in electrical contact with metal, which is arranged in the recesses. Deposited metal may remain on portions of the surface of the glass carrier that are spaced from the recesses, which is not the same as that shown in FIG.
  • Recesses arranged metal is in contact. Such metal remaining on the surface of the glass carrier can e.g. form an electrically insulated label.
  • connection surfaces e.g. Solder pads that match those in the
  • Recesses arranged metal are in electrical contact, are not removed and remain on the surface of the glass support.
  • the removal of the metal from the surface of the glass carrier, from which the recesses extend, can be carried out, leaving at least one metal contact surface on the surface of the glass carrier, which is in electrical contact with metal in contact with the metal
  • Recesses is arranged.
  • metal can be removed from the surface of the glass carrier from which the recesses extend until this surface of the glass carrier is completely free of metal.
  • the temperature to which heating is carried out in step 6 and / or additionally after step 7 can, for example, at least 80 ° C. up to 800 ° C., preferably up to 700 ° C., up to 600 ° C., up to 500 ° C., up to 400 ° C, up to 300 ° C or up to 200 ° C, for example 100 to 120 ° C.
  • the optional reinforcement of the metal layer, which is arranged in the recesses, in step 7 is preferably carried out in a chemical bath, preferably in a galvanic bath, in which metal ions are contained, the metal in the recesses of the glass carrier preferably making electrical contact and being supplied with current to form a cathode. It has been shown that this reinforcement of the metal layer by deposition of metal ions from a bath essentially only takes place until the recesses in the
  • Glass carrier are filled with metal.
  • the galvanic bath can contain ions of a different metal than the metal previously applied to the glass carrier or into the recesses.
  • the method produces glass supports which have recesses in which metal is arranged, a chemical connection being established between the metal and the glass support by means of a silane compound, the surface of the glass support from which the recesses extend into the volume of the glass support being exposed of metal.
  • Recesses preferably have at least two recesses that extend continuously through the glass carrier and at least one recess that is connected in the form of a channel to at least one of the continuous recesses, wherein preferably a shell-shaped region of a recess is connected to the channel by a recess.
  • FIG. 1 shows schematically the provision of a glass carrier 2 which has recesses 1.
  • an original glass carrier 2a is irradiated with laser pulses L at the points at which recesses 1 are to be produced, and this glass carrier 2a is then etched. During the etching, recesses 1 are formed at the locations irradiated with laser pulses L.
  • FIG. 1A shows a sectional view of a method for producing recesses 1 in a glass carrier 2 by irradiating an original glass carrier 2a with laser radiation L at the locations where the recesses are 1 should be generated.
  • the laser beam L which is generally preferably a sequence of laser pulses, penetrates into the glass carrier 2a to a depth dependent on the focus position and generates one therein
  • Modification M. Fig. 1 B) shows in the sectional view that the subsequent etching of the glass carrier 2a creates the recesses 1 in the glass carrier 2.
  • microstructures in the form of trench-shaped recesses 1 are generated during the subsequent etching.
  • 1E) to G) represent an alternative method for producing recesses 1, in which an original glass carrier 2a with laser radiation L has the cross section of the Glass carrier 2a penetrates and produces a modification M, which extends through the cross section of the glass carrier 2.
  • a surface of the glass carrier 2 is coated with etching resist R, for example lacquer or plastic film. During the subsequent etching, the glass carrier 2 is not attacked on the surface coated by the etching resist R, so that the produced one
  • Recess 1 extends from the surface into the glass carrier 2, which lies opposite the etching resist R.
  • the etching resist R is then preferably removed.
  • FIG. 2 shows the method schematically on the basis of a recess 1 in the form of a trench with a V-shaped cross section in a plate-shaped glass carrier 2
  • a silane compound 3 is applied to glass carrier 2, over the entire surface or preferably only into recess 1 (FIG. 2A).
  • a metal layer 4 is then applied over the entire surface of the glass carrier 2 to the applied silane compound 3 (FIG. 2B). Then the metal layer 4 is removed, e.g. mechanically, so that at least in the recess 1 a portion of the metal layer 4 remains and between the metal layer 4 and the glass carrier 2 the silane compound (FIG. 2C).
  • the optional, preferably galvanic, reinforcement makes the portion of the metal layer 4 remaining in the recess 1 thicker (FIG. 2D), optionally until the galvanically reinforced layer 5 protrudes beyond the surface of the glass carrier 2.
  • the laser pulses were placed in such a way that the recesses created during the subsequent etching were connected.
  • the depth of the channels was controlled by the parameters of the etching, in particular the duration, concentration of the etching bath and temperature.
  • a silane compound preferably mercaptosilane
  • solvent for silanization, a silane compound, preferably mercaptosilane
  • the silane compound could essentially only be introduced into the recess in a targeted manner by metering it into a bowl-shaped region of the channel with a cannula.
  • the glass support provided with the silane compound was heated to 110 ° C. in the oven.
  • the glass substrate was heated to approximately 100 to 120 ° C. in accordance with step 6 in order to produce a thiol-metal bond.
  • the metal was connected to the glass support, which only had metal in its recesses, with a wire, supplied with current and immersed in a galvanic bath, so that additional metal was deposited on the metal from the bath.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne un procédé de fabrication de supports en verre pourvus de tracés conducteurs en métal. Les supports en verre présentent des évidements, qui forment des microstructures, un métal étant disposé dans les évidements et sensiblement aucun métal n'étant présent sur la surface du support en verre, depuis laquelle les évidements s'étendent dans le volume du support en verre.
PCT/EP2020/052196 2019-02-01 2020-01-29 Fabrication de tracés conducteurs métalliques sur du verre WO2020157153A1 (fr)

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DE102019201347.3A DE102019201347B3 (de) 2019-02-01 2019-02-01 Herstellung von metallischen Leiterbahnen an Glas
DEDE102019201347.3 2019-02-01

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WO2020157153A1 true WO2020157153A1 (fr) 2020-08-06

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US20080005899A1 (en) 2006-07-10 2008-01-10 Canon Kabushiki Kaisha Manufacturing method of wiring board, manufacturing method of electron source, manufacturing method of image display apparatus and image reproducing apparatus
EP2543466A1 (fr) * 2010-04-08 2013-01-09 Fujikura, Ltd. Procédé de formation de microstructures, dispositif de rayonnement laser et substrat
US20150166395A1 (en) * 2013-12-17 2015-06-18 Corning Incorporated Method for Rapid Laser Drilling of Holes in Glass and Products Made Therefrom
WO2016041544A1 (fr) * 2014-09-16 2016-03-24 Lpkf Laser & Electronics Ag Procédé d'insertion d'au moins un évidement ou trou débouchant dans une pièce en forme de plaque
DE102015117558A1 (de) 2015-10-15 2017-04-20 Lpkf Laser & Electronics Ag Verfahren zum Herstellen von strukturierten Beschichtungen auf einem Formteil und Vorrichtung zur Durchführung des Verfahrens

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US20080005899A1 (en) 2006-07-10 2008-01-10 Canon Kabushiki Kaisha Manufacturing method of wiring board, manufacturing method of electron source, manufacturing method of image display apparatus and image reproducing apparatus
EP2543466A1 (fr) * 2010-04-08 2013-01-09 Fujikura, Ltd. Procédé de formation de microstructures, dispositif de rayonnement laser et substrat
US20150166395A1 (en) * 2013-12-17 2015-06-18 Corning Incorporated Method for Rapid Laser Drilling of Holes in Glass and Products Made Therefrom
WO2016041544A1 (fr) * 2014-09-16 2016-03-24 Lpkf Laser & Electronics Ag Procédé d'insertion d'au moins un évidement ou trou débouchant dans une pièce en forme de plaque
DE102015117558A1 (de) 2015-10-15 2017-04-20 Lpkf Laser & Electronics Ag Verfahren zum Herstellen von strukturierten Beschichtungen auf einem Formteil und Vorrichtung zur Durchführung des Verfahrens

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